Diamond wire bus, preparation method and diamond wire

Abstract

The invention provides a diamond wire bus, a preparation method and a diamond wire. The diamond wire bus comprises a base body and a coating layer covering at least part of the surface of the base body, the coating layer comprises a first metal layer, and the first metal layer covers at least part of the surface of the base body; the second metal layer covers at least part of the surface of the first metal layer, and the third metal layer covers at least part of the surface of the second metal layer; the second metal layer comprises first metal; the third metal layer comprises second metal and third metal, and the content of the second metal in the third metal layer is gradually increased in the direction away from the second metal layer; the third metal and the first metal are the same metal. The second metal layer can play a role in lubricating and coordinating deformation of the base body in the subsequent cold drawing deformation process; the outer surface of the third metal layer has a lubricating effect in the cold drawing deformation process and can keep enough strength without falling off at the same time, so that the drawing process of the diamond wire or the diamond wire bus can be continuously carried out.

Description

Technical Field

[0001] The present application belongs to the field of diamond wire technology, and specifically relates to a diamond wire busbar and a preparation method, and a diamond wire. Background Art

[0002] Diamond wire cutting technology is gradually replacing traditional internal circular saw and mortar cutting technology in the cutting of hard and brittle materials such as semiconductor silicon wafers and sapphires, becoming the mainstream cutting process due to its advantages of high chip yield, high cutting efficiency, low material loss and low environmental pollution. Compared with diamond wire with high carbon steel wire as the core wire, diamond wire with tungsten wire as the core wire can avoid problems such as wire breakage caused by excessive temperature during cutting due to the extremely high melting point of tungsten wire, and the strength is also greatly improved.

[0003] However, due to the high strength of tungsten wire, the tungsten wire preparation process is usually carried out at high temperature. The temperature fluctuation greatly affects the quality stability and production efficiency of the tungsten wire. If the tungsten wire is cold-drawn at room temperature, it will face the problem of a high wire breakage rate during the drawing process.

[0004] How to design a diamond wire busbar and diamond wire with tungsten wire as the core wire so that they can have a good yield rate in the cold drawing process is a technical problem that needs to be solved at present. Summary of the invention

[0005] The present application provides a diamond wire busbar and a preparation method, and a diamond wire, aiming to solve the problem of unsatisfactory yield rate of the existing diamond wire busbar in the cold drawing process.

[0006] The first embodiment of the present application provides a diamond wire busbar, comprising a substrate and a coating layer covering at least a portion of the surface of the substrate, wherein the coating layer comprises:

[0007] A first metal layer, the first metal layer is coated on at least a portion of the surface of the substrate;

[0008] A second metal layer is disposed on at least a portion of the surface of the first metal layer.

[0009] a third metal layer, the third metal layer covering at least a portion of a surface of the second metal layer;

[0010] Wherein, the second metal layer includes a first metal;

[0011] The third metal layer includes a second metal and a third metal. The content of the second metal in the third metal layer increases gradually in a direction away from the second metal layer. The third metal and the first metal are the same metal.

[0012] In some embodiments, the mass percentage of the first metal in the second metal layer is 95% to 100%.

[0013] In some embodiments, the mass percentage of the second metal in the third metal layer close to the second metal layer is 5-10%.

[0014] In some embodiments, the mass percentage of the second metal in the third metal layer at a side away from the second metal layer is 30-35%.

[0015] In some embodiments, the first metal is selected from copper.

[0016] In some embodiments, the second metal is selected from at least one of zinc, nickel, and tin.

[0017] In some embodiments, the third metal is selected from copper.

[0018] In some embodiments, the material of the substrate includes tungsten.

[0019] In some embodiments, the material of the first metal layer includes nickel.

[0020] In some embodiments, the hardness of the second metal layer is less than the hardness of the first metal layer, and the hardness of the second metal layer is less than the hardness of the third metal layer.

[0021] In some embodiments, the hardness of the second metal layer is equal to the hardness of the third metal layer.

[0022] In some embodiments, the hardness of the first metal layer is 130-180 HV.

[0023] In some embodiments, the hardness of the second metal layer is 30-90 HV.

[0024] In some embodiments, the hardness of the third metal layer is 60-130 HV.

[0025] The second embodiment of the present application provides a method for preparing a diamond wire busbar, comprising the following steps:

[0026] providing a substrate;

[0027] forming a first metal layer on at least a portion of the surface of the substrate;

[0028] forming a first intermediate layer on at least a portion of the surface of the first metal layer;

[0029] forming a second intermediate layer on at least a portion of the surface of the first intermediate layer;

[0030] Wherein, the first intermediate layer comprises a first metal, and the second intermediate layer comprises a second metal;

[0031] The first intermediate layer and the second intermediate layer are subjected to a thermal diffusion treatment, so that the second metal diffuses into a portion of the first intermediate layer to form a third metal layer, and the remaining portion of the first intermediate layer forms a second metal layer.

[0032] In some embodiments, the thickness of the first intermediate layer is 0.4 μm to 1.8 μm.

[0033] In some embodiments, the thickness of the second intermediate layer is 0.05 μm to 0.8 μm.

[0034] In some embodiments, the maximum radial dimension of the substrate is 50 μm to 100 μm.

[0035] In some embodiments, the thickness of the first metal layer is 0.02 μm to 0.25 μm.

[0036] In some embodiments, the thickness of the second metal layer is 0.2 μm to 1.5 μm.

[0037] In some embodiments, the thickness of the third metal layer is 0.1 μm to 0.6 μm.

[0038] In some embodiments, the heat diffusion temperature is 300°C to 500°C.

[0039] In some embodiments, the heat diffusion time is 8 minutes to 12 minutes.

[0040] In some embodiments, the step of forming a first metal layer on at least a portion of the surface of the substrate further includes:

[0041] Providing a first plating solution, wherein the first plating solution includes a nickel salt solution, performing a first electroplating to deposit metal nickel on the periphery of the substrate to obtain the first metal layer;

[0042] The step of forming a first intermediate layer on at least a portion of the surface of the first metal layer further includes:

[0043] Providing a second plating solution, wherein the second plating solution includes a salt solution of the first metal, performing a second electroplating to deposit the first metal on the periphery of the first metal layer to obtain the first intermediate layer;

[0044] The step of forming a second intermediate layer on at least a portion of the surface of the first intermediate layer further comprises:

[0045] Providing a third plating solution, wherein the third plating solution includes a salt solution of the second metal, and performing a third electroplating to deposit the second metal on the periphery of the first intermediate layer to obtain the second intermediate layer;

[0046] Wherein, the first metal is selected from copper, and the second metal is selected from at least one of zinc, nickel and tin.

[0047] In some embodiments, the temperature of the first electroplating is 45°C to 60°C, and the current density is 20A / dm 2 ~40A / dm 2 .

[0048] In some embodiments, the second electroplating temperature is 30°C to 50°C, and the current density is 1A / dm 2 ~20A / dm 2 .

[0049] In some embodiments, the temperature of the third electroplating is 35°C to 55°C, and the current density is 1A / dm 2 ~20A / dm 2 .

[0050] A third embodiment of the present application provides a diamond wire, comprising the diamond wire mother bar in any of the above embodiments, and a grinding layer and first particles; the grinding layer covers at least a portion of the surface of the diamond wire mother bar, the first particles are dispersed in the grinding layer, and at least a portion of the first particles protrude from the grinding layer;

[0051] In some embodiments, second particles are dispersed in the grinding layer; the average particle size of the second particles is 10 μm to 100 μm;

[0052] A fourth metal layer is arranged between the diamond wire busbar and the grinding layer; the material of the fourth metal layer includes nickel.

[0053] The present application provides a diamond wire busbar, comprising a substrate and a coating layer covering at least a portion of the surface of the substrate, the coating layer comprising: a first metal layer, the first metal layer covering at least a portion of the surface of the substrate; a second metal layer, the second metal layer covering at least a portion of the surface of the first metal layer; a third metal layer, the third metal layer covering at least a portion of the surface of the second metal layer; wherein the second metal layer comprises a first metal; the third metal layer comprises a second metal and a third metal, and the content of the second metal in the third metal layer increases gradually in a direction away from the second metal layer; the third metal and the first metal are the same metal. In the diamond wire busbar provided by the present application, the first metal layer can improve the bonding force between the second metal layer and the substrate; the second metal layer is located between the first metal layer and the third metal layer, and can play a role in lubrication and coordination of substrate deformation in the subsequent cold drawing deformation process; the outer surface of the third metal layer is an alloy material formed by a mixture of the second metal and the third metal, which has a high hardness and is in direct contact with the mold in the cold drawing deformation process. While playing a lubricating effect, it can maintain sufficient strength and will not fall off. The second metal content on the inner surface is relatively low, and the physical and chemical properties of the material are similar to those of the second metal layer, and it can just combine with the second metal layer, so that the process of drawing the diamond wire or the diamond wire busbar can be carried out continuously, thereby reducing the wire breakage rate of the diamond wire busbar in the cold drawing process, and obtaining a finished product diameter with good consistency, thereby improving the cutting yield in subsequent processes. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0055] Figure 1 A schematic diagram of the main cross-sectional structure of a diamond wire busbar provided in an embodiment of the present application;

[0056] Figure 2 for Figure 1 A schematic diagram of the side cross-sectional structure of the diamond wire busbar;

[0057] Figure 3 A schematic diagram of a main cross-sectional structure of a diamond wire provided in an embodiment of the present application;

[0058] Figure 4 for Figure 3 A schematic diagram of the side cross-sectional structure of the diamond wire in FIG.

[0059] Reference numerals:

[0060] 100 - substrate, 200 - coating layer, 201 - first metal layer, 202 - second metal layer, 203 - third metal layer, 301 - grinding layer, 302 - abrasive particles, 400 - fourth metal layer. DETAILED DESCRIPTION

[0061] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0062] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, or indirectly connected through a pipe or pipeline, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" can explicitly or implicitly include one or more features.

[0063] The first embodiment of the present application provides a diamond wire busbar, comprising a substrate 100 and a coating layer 200 covering at least a portion of the surface of the substrate 100, wherein the coating layer 200 comprises:

[0064] A first metal layer 201, the first metal layer 201 covers at least a portion of the surface of the substrate 100;

[0065] A second metal layer 202, the second metal layer 202 covers at least a portion of the surface of the first metal layer 201;

[0066] A third metal layer 203, the third metal layer 203 covers at least a portion of the surface of the second metal layer 202;

[0067] Wherein, the second metal layer 202 includes a first metal;

[0068] The third metal layer 203 includes the second metal and the third metal. The content of the second metal in the third metal layer 203 increases gradually in a direction away from the second metal layer 202. The third metal and the first metal are the same metal.

[0069] In the diamond wire busbar provided in the present application, the first metal layer 201 can improve the bonding force between the second metal layer 202 and the substrate 100; the second metal layer 202 is located between the first metal layer 201 and the third metal layer 203, and can play a role in lubricating and coordinating the deformation of the substrate 100 in the subsequent cold drawing deformation process; the outer surface of the third metal layer 203 is an alloy material formed by a mixture of the second metal and the third metal, which has a high hardness and is in direct contact with the mold in the cold drawing deformation process. While playing a lubricating effect, it can maintain sufficient strength and will not fall off. The second metal content on the inner surface is relatively low, and the physical and chemical properties of the material are similar to those of the second metal layer 202, and it can just combine with the second metal layer 202, so that the process of drawing the diamond wire or the diamond wire busbar can be carried out continuously, thereby reducing the wire breakage rate of the diamond wire busbar in the cold drawing process, and obtaining a finished product diameter with good consistency, thereby improving the cutting yield in subsequent processes.

[0070] In some embodiments, the mass percentage of the first metal in the second metal layer 202 is 95% to 100%.

[0071] It can be understood that the mass percentage of the first metal in the second metal layer 202 can be any value among 95%, 96%, 97%, 98%, 99%, 100%, or a range between any two values.

[0072] In some embodiments, the mass percentage of the second metal in the third metal layer 203 close to the second metal layer 202 is 5-10%.

[0073] It is understandable that the mass percentage of the second metal on the side close to the second metal layer 202 in the third metal layer 203 can be any value among 5%, 6%, 7%, 8%, 9%, 10%, or a range between any two values. When the mass percentage of the second metal on the side close to the second metal layer 202 in the third metal layer 203 satisfies the above value range, the physical and chemical properties of the side close to the second metal layer 202 of the third metal layer 203 can be further made sufficiently close to those of the second metal layer 202, thereby ensuring that the third metal layer 203 and the second metal layer 202 have good bonding strength.

[0074] In some embodiments, the mass percentage of the second metal in the third metal layer 203 at a side away from the second metal layer 202 is 30-35%.

[0075] It is understandable that the mass percentage of the second metal on the side away from the second metal layer 202 in the third metal layer 203 can be any value of 30%, 31%, 32%, 33%, 34%, 35%, or a range between any two values. When the mass percentage of the second metal on the side away from the second metal layer 202 in the third metal layer 203 meets the above value range, the outer surface of the entire coating layer 200 has an ideal alloy strength, avoiding the problem of falling off or deformation in subsequent processes.

[0076] In some embodiments, the first metal is selected from copper.

[0077] In some embodiments, the second metal is selected from at least one of zinc, nickel, and tin.

[0078] In some embodiments, the third metal is selected from copper.

[0079] In some embodiments, the material of the substrate 100 includes tungsten.

[0080] In some embodiments, the material of the first metal layer 201 includes nickel.

[0081] In some embodiments, the hardness of the second metal layer 202 is less than the hardness of the first metal layer 201 , and the hardness of the second metal layer 202 is less than the hardness of the third metal layer 203 .

[0082] The hardness of the second metal layer 202 is smaller than that of the first metal layer 201 and the third metal layer 203 . Accordingly, the ductility thereof is higher, and the second metal layer 202 can play a role in lubrication and coordination of the deformation of the substrate in the subsequent cold drawing process.

[0083] In some embodiments, the hardness of the second metal layer 202 is equal to the hardness of the third metal layer 203 .

[0084] In some embodiments, the hardness of the first metal layer 201 is 130-180 HV.

[0085] It can be understood that the hardness value (unit: HV) of the first metal layer 201 can be any value among 130, 140, 150, 160, 170, 180 or a range between any two values.

[0086] In some embodiments, the hardness of the second metal layer 202 is 30-90 HV.

[0087] It can be understood that the hardness of the second metal layer 202 (unit: HV) can be any value among 30, 40, 50, 60, 70, 80, 90 or a range between any two values.

[0088] In some embodiments, the hardness of the third metal layer 203 is 60-130 HV.

[0089] It can be understood that the hardness value (unit: HV) of the third metal layer 203 can be any value among 60, 70, 80, 90, 100, 110, 120, 130 or a range between any two values.

[0090] When the hardness of the first metal layer 201 , the second metal layer 202 , and the third metal layer 203 meet the above value range, the three have an ideal coordination effect and overall strength.

[0091] In some embodiments, the first metal layer 201 is a metal nickel layer, or the first metal layer 201 is a nickel-cobalt alloy layer. The metal nickel layer and the nickel-cobalt alloy have good bonding strength to both metal tungsten and metal copper. When the first metal layer 201 is arranged between the substrate 100 and the second metal layer 202, the bonding strength between the second metal layer 202 and the substrate 100 can be effectively improved, thereby preventing the problem of the coating layer 200 falling off during the cold drawing deformation process of the diamond wire busbar.

[0092] See also Figure 1-2 In some embodiments, along the radial direction of the diamond wire busbar (i.e., the first direction X), the substrate 100 has a maximum size Dμm, the first metal layer 201 has a first size L1μm, the second metal layer 202 has a second size L2μm, and the third metal layer 203 has a third size L3μm, satisfying:

[0093] D = a·(L1+L2+L3);

[0094] Wherein, a is a first thickness coefficient, which represents the ratio of the maximum radial dimension of the substrate 100 to the sum of the radial thicknesses of the first metal layer 201 , the second metal layer 202 , and the third metal layer 203 , and satisfies 30≤a≤100.

[0095] It can be understood that the value of the first thickness coefficient a can be any value of 30, 40, 50, 60, 70, 80, 90, 100 or a range between any two values. Since the strength of the tungsten wire forming the substrate 100 is much higher than that of the coating 200, under the premise of ensuring that the drawing effect is met, the smaller the thickness of the coating 200, the more beneficial it is to the strength improvement of the diamond wire busbar, and ultimately the cutting force of the diamond wire can be improved; but if the thickness of the coating 200 is too small, it will be unfavorable for the cold deformation of the substrate 100. This is because when preparing the substrate 100, a thicker tungsten wire will be used for hot drawing under the traditional process, so the consistency of the diameter of the formed substrate 100 is not ideal. At the same time, due to the high strength of the tungsten wire, the diameter difference at different positions along the axial direction of the substrate 100 will directly lead to the difference in deformation resistance during the subsequent cold drawing process, which is very unfavorable for the mold to apply uniform deformation to the diamond wire busbar. Therefore, a coating 200 of a certain thickness, especially the second metal layer 202, can coordinate the deformation of the substrate 100 during the cold drawing process, making it more uniform, and finally obtaining a diamond wire busbar with better consistency. When the first thickness coefficient a, that is, the ratio of the substrate 100 to the coating layer 200 satisfies the above value range, it can ensure that the diamond wire busbar has an ideal strength while having good diameter consistency after the cold drawing process.

[0096] Based on the above embodiment, the first thickness coefficient a is further preferably 40≤a≤90. It can be understood that the value of the first thickness coefficient a can be any value of 40, 50, 60, 70, 80, 90 or a range between any two values. When the value of the first thickness coefficient a satisfies the above value range, the comprehensive performance of the strength and cold-drawn consistency of the diamond wire busbar can be further improved.

[0097] In some embodiments, the first dimension L1 μm and the second dimension L2 μm satisfy:

[0098] L2 = b·L1;

[0099] Wherein, b is the second thickness coefficient, indicating the ratio of the second dimension L2 to the first dimension L1, and satisfies 5≤b≤15.

[0100] It can be understood that the value of the second thickness coefficient b can be any value among 5, 7, 9, 11, 13, 15 or a range between any two values. When the second thickness coefficient b, that is, the ratio of the second dimension L2 to the first dimension L1 satisfies the above value range, the diamond wire busbar can have better ductility and a more ideal strength as a whole.

[0101] In some embodiments, the second dimension L2 μm and the third dimension L3 μm satisfy:

[0102] L2=c·L3;

[0103] Wherein, c is the third thickness coefficient, indicating the ratio of the second dimension L2 to the third dimension L3, and satisfies 2≤c≤8.

[0104] It can be understood that the value of the third thickness coefficient c can be any value among 2, 3, 4, 5, 6, 7, 8 or a range between any two values. When the third thickness coefficient c, that is, the ratio of the second dimension L2 to the third dimension L3 satisfies the above value range, it can ensure that the outer surface of the diamond wire busbar has an ideal hardness and the overall strength has a relatively ideal strength.

[0105] In some embodiments, the maximum dimension D μm satisfies: 50≤D≤100, more preferably 60≤D≤90.

[0106] Generally, the diamond wire mother wire and the radial section of the diamond wire can be circular or elliptical, preferably circular. Figure 1 When the radial section of the substrate 100 is circular, the maximum dimension D is the diameter of the radial section of the substrate 100. It can be understood that the value of the maximum dimension D (unit: μm) can be any value among 50, 60, 70, 80, 90, 100 or a range between any two values.

[0107] In some embodiments, the first size L1 μm satisfies: 0.02≤L1≤0.25, and more preferably 0.05≤L1≤0.15.

[0108] It can be understood that the value of the first size L1 (unit: μm) can be any value among 0.02, 0.05, 0.10, 0.15, 0.20, 0.25, or a range between any two values.

[0109] In some embodiments, the second size L2 μm satisfies: 0.2≤L2≤1.5, and more preferably 0.4≤L2≤0.7.

[0110] It can be understood that the value of the second size L2 (unit: μm) can be any value among 0.2, 0.4, 0.6, 0.7, 0.9, 1.1, 1.3, 1.5, or a range between any two values.

[0111] In some embodiments, the third dimension L3 μm satisfies: 0.1≤L3≤0.6, and more preferably 0.3≤L3≤0.6.

[0112] It can be understood that the value of the third dimension L3 (unit: μm) can be any value among 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 or a range between any two values.

[0113] When the maximum dimension D and the first dimension L1, the second dimension L2, and the third dimension L3 of the substrate 100 meet the above value ranges, it can ensure that the diamond wire busbar achieves a balance in terms of overall strength and cold-drawing coordination.

[0114] The second embodiment of the present application provides a method for preparing a diamond wire busbar, comprising the following steps:

[0115] Providing a substrate 100;

[0116] Forming a first metal layer 201 on at least a portion of the surface of the substrate 100;

[0117] forming a first intermediate layer on at least a portion of the surface of the first metal layer 201;

[0118] forming a second intermediate layer on at least a portion of the surface of the first intermediate layer;

[0119] Wherein, the first intermediate layer comprises a first metal, and the second intermediate layer comprises a second metal;

[0120] The first intermediate layer and the second intermediate layer are subjected to a thermal diffusion treatment, so that the second metal diffuses into a portion of the first intermediate layer to form a third metal layer 203 , and the remaining portion of the first intermediate layer forms the second metal layer 202 .

[0121] After the second metal diffuses into part of the first intermediate layer, it forms an alloy layer together with the original first metal in the first intermediate layer, namely, the third metal layer 203. The remaining part of the first metal that is not combined with the second metal forms the second metal layer 202. The third metal layer 203 is formed by thermal diffusion, and the second metal inside it can show a distribution trend that gradually decreases from the outside to the inside, thereby achieving a good combination of the third metal layer 203 and the second metal layer 202, while ensuring the good strength of the outer surface of the third metal layer 203.

[0122] In some embodiments, the first intermediate layer has a thickness of 0.4 μm to 1.8 μm.

[0123] It can be understood that the thickness of the first intermediate layer (unit: μm) can be any value among 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, 1.6, 1.8 or a range between any two values.

[0124] In some embodiments, the second intermediate layer has a thickness of 0.05 μm to 0.8 μm.

[0125] It can be understood that the thickness of the second intermediate layer (unit: μm) can be any value among 0.05, 0.1, 0.2, 0.4, 0.6, 0.8 or a range between any two values.

[0126] In some embodiments, the maximum radial dimension of the substrate 100 is 50 μm to 100 μm.

[0127] It can be understood that the value of the maximum radial dimension of the substrate 100 (unit: μm) can be any value among 50, 60, 70, 80, 90, 100 or a range between any two values.

[0128] In some embodiments, the thickness of the first metal layer 201 is 0.02 μm to 0.25 μm.

[0129] It can be understood that the thickness of the first metal layer 201 (unit: μm) can be any value among 0.02, 0.05, 0.1, 0.15, 0.2, 0.25 or a range between any two values.

[0130] In some embodiments, the thickness of the second metal layer 202 is 0.2 μm to 1.5 μm.

[0131] It can be understood that the thickness of the second metal layer 202 (unit: μm) can be any value among 0.2, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, 1.5 or a range between any two values.

[0132] In some embodiments, the thickness of the third metal layer 203 is 0.1 μm to 0.6 μm.

[0133] It can be understood that the thickness of the third metal layer 203 (unit: μm) can be any value among 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 or a range between any two values.

[0134] When the intermediate layers and metal layers before and after the thermal diffusion treatment satisfy the above value relationship, the coating layer after the thermal diffusion treatment can have an ideal overall thickness, and the first metal and the second metal in the third metal layer 203 have a reasonable distribution range.

[0135] In some embodiments, the temperature of the heat diffusion is 300°C to 500°C.

[0136] It can be understood that the value of the thermal diffusion temperature (unit: °C) can be any value among 300, 350, 400, 450, 500 or a range between any two values.

[0137] In some embodiments, the heat diffusion time is 8 min to 12 min.

[0138] It can be understood that the value of the heat diffusion time (unit: min) can be any value among 8, 9, 10, 11, 12 or a range between any two values.

[0139] When the temperature and time of the thermal diffusion satisfy the above value range, it can further ensure that the coating layer 200 with ideal thickness, bonding strength and coordinated performance is obtained after the thermal diffusion treatment.

[0140] In some embodiments, the step of forming the first metal layer 201 on at least a portion of the surface of the substrate 100 further includes:

[0141] Providing a first plating solution, the first plating solution comprising a nickel salt solution, performing a first electroplating, depositing metal nickel on the periphery of the substrate 100, and obtaining a first metal layer 201;

[0142] The step of forming a first intermediate layer on at least a portion of the surface of the first metal layer 201 further includes:

[0143] Providing a second plating solution, the second plating solution comprising a salt solution of the first metal, performing a second electroplating to deposit the first metal on the periphery of the first metal layer 201 to obtain a first intermediate layer;

[0144] The step of forming a second intermediate layer on at least a portion of the surface of the first intermediate layer further comprises:

[0145] Providing a third plating solution, the third plating solution comprising a salt solution of the second metal, performing a third electroplating to deposit the second metal on the periphery of the first intermediate layer to obtain a second intermediate layer;

[0146] The first metal is selected from copper, and the second metal is selected from at least one of zinc, nickel and tin.

[0147] In some embodiments, the temperature of the first electroplating is 45°C to 60°C, and the current density is 20A / dm 2 ~40A / dm 2 .

[0148] It is understood that the value of the temperature of the first electroplating (unit: ° C) can be any value among 45, 50, 55, 60 or a range between any two values, and the value of the current density of the first electroplating (unit: A / dm 2 ) can be any value among 20, 25, 30, 35, 40 or a range between any two values.

[0149] In some embodiments, the temperature of the second electroplating is 30°C to 50°C, and the current density is 1A / dm 2 ~20A / dm 2 .

[0150] It is understood that the temperature of the second electroplating (unit: ° C) can be any value among 30, 35, 40, 45, 50 or a range between any two values, and the current density of the second electroplating (unit: A / dm 2) can be any value among 1, 5, 10, 15, 20 or a range between any two values.

[0151] In some embodiments, the temperature of the third electroplating is 35°C to 55°C, and the current density is 1A / dm 2 ~20A / dm 2 .

[0152] It is understood that the value of the temperature of the third electroplating (unit: ° C) can be any value among 35, 40, 45, 50, 55 or a range between any two values, and the value of the current density of the third electroplating (unit: A / dm 2 ) can be any value among 1, 5, 10, 15, 20 or a range between any two values.

[0153] like Figure 3 and Figure 4 As shown, the third embodiment of the present application provides a diamond wire, comprising the diamond wire mother bar in any of the above embodiments, and a grinding layer 300 and first particles 301; the grinding layer 300 is coated on at least a portion of the surface of the diamond wire mother bar, the first particles 301 are dispersed in the grinding layer 300, and at least a portion of the first particles 301 protrude from the grinding layer 300;

[0154] In some embodiments, the grinding layer 300 is dispersed with second particles 302 ; the average particle size of the second particles 302 is 10 μm to 100 μm;

[0155] It can be understood that the average particle size (unit: μm) of the second particles 302 can be any value among 10, 20, 40, 60, 80, 100 or a range between any two values.

[0156] A fourth metal layer 400 is disposed between the diamond wire busbar and the grinding layer 300 ; the fourth metal layer 400 is made of nickel, which may be metallic nickel or a nickel alloy containing iron or cobalt.

[0157] The following is a description of the diamond wire busbar and diamond wire provided by the present application in conjunction with specific embodiments:

[0158] Example 1

[0159] This embodiment 1 provides a diamond wire busbar, see Figure 1 and Figure 2 , including a substrate 100 and a coating layer 200 coated on the surface of the substrate 100. Along the direction away from the substrate 100, the coating layer 200 includes a first metal layer 201, a second metal layer 202 and a third metal layer 203 stacked in sequence.

[0160] The substrate 100 is made of pure tungsten wire with a diameter of 60 μm; the first metal layer 201 is made of nickel with a thickness of 0.05 μm; the second metal layer 202 is made of pure copper with a thickness of 0.45 μm; and the third metal layer 203 is made of copper-zinc alloy with a thickness of 0.4 μm.

[0161] The diamond wire busbar provided in this embodiment is prepared by the following steps:

[0162] (1) Pretreatment: The substrate 100 is subjected to alkali washing-first water washing-acid washing-second water washing, wherein the cleaning solution of the alkali washing (the solvent is water) is composed of: 30 g / L sodium hydroxide, 10 g / L sodium metasilicate, 10 g / L sodium chloride, the alkali washing time is 50 s, the temperature is 55° C., and the ultrasonic frequency is 30 Hz; the first water washing: using pure water with a pH of 6.2-6.5 and a conductivity of ≤2 us / cm; the cleaning solution of the acid washing (the solvent is water) is composed of: 20 g / L hydrochloric acid, the acid washing time is 30 s, and the temperature is 25° C.; the second water washing: using deionized water with a pH of 6.5-7.0 and a conductivity of ≤2.5 us / cm, to obtain the cleaned substrate 100;

[0163] (2) First electroplating: The cleaned substrate 100 is placed in a first plating solution to deposit a first metal layer 201. The first plating solution includes the following components: 20-150 ml / L hydrochloric acid, 50-200 g / L nickel chloride, pH value 0.5-2.0, electroplating temperature 45-60°C, current density 20-40 A / dm 2 ;

[0164] (3) Second electroplating: The substrate 100 plated with the first metal layer 201 is placed in a second plating solution to deposit the first intermediate layer. The second plating solution includes the following components: potassium pyrophosphate 100-500 g / L, copper pyrophosphate 10-100 g / L, pH value 7.0-9.0, electroplating temperature 30-50°C, current density 1-20 A / dm 2 ;

[0165] (4) The third electroplating: the substrate 100 plated with the first intermediate layer and the first metal layer 201 is placed in a third plating solution to deposit the second intermediate layer to obtain a raw material busbar. The third plating solution includes the following components: 100-400 g / L zinc sulfate, pH value 1.0-3.0, electroplating temperature 35-55°C, current density 1-20 A / dm 2 ;

[0166] (5) Water washing and drying: The raw busbar prepared in the above steps is washed with pure water at a temperature of 50°C. The washed raw busbar is dried by a heating bellows for 5s to 30s at a temperature of ≤150°C.

[0167] (6) Thermal diffusion treatment: The raw material busbar is placed in a heating furnace and heated at 400°C for 8 min. After heating, the material is quickly cooled to room temperature to obtain a diamond wire busbar.

[0168] The fourth metal layer 400 and the grinding layer 300 are electroplated on the basis of the above-mentioned diamond wire busbar to form a diamond wire, see Figure 3 The fourth metal layer 400 covers the surface of the diamond wire busbar, the grinding layer 300 covers the surface of the fourth metal layer 400, the abrasive particles 302 are distributed in the grinding layer 300, and the first particles are dispersed in the grinding layer 300.

[0169] Embodiments 2 to 18

[0170] The diamond wire busbars and diamond wire structures provided in Examples 2 to 18 are consistent with those in Example 1, and the only difference is that the size parameters of the substrate 100 and the coating layer 200 are adjusted.

[0171] Comparative Examples 1 to 9

[0172] The diamond wire busbars and diamond wire structures provided in Comparative Examples 1 to 9 are consistent with those in Example 1, and the only difference is that the size parameters of the substrate 100 and the coating layer 200 are adjusted.

[0173] The values ​​of the relevant parameters of the diamond wire busbar in Examples 1 to 18 and Comparative Examples 1 to 9 are shown in Table 1.

[0174] Table 1

[0175]

[0176]

[0177]

[0178]

[0179] The diamond wires in Examples 1 to 18 and Comparative Examples 1 to 9 were subjected to strength tests using the following method:

[0180] Wire breakage rate test: Cut G12 size silicon wafers, set the cutting tension to 4.0N, set the cutting time to 100min and 120min respectively, and the number of cutting cuts to 200, and compare their wire breakage rates;

[0181] Yield test: The appearance of the cut silicon wafer is used as the judging standard. When there is no abnormality in the appearance of the silicon wafer, it is considered a qualified finished product.

[0182] The test results are shown in Table 2.

[0183] Table 2

[0184]

[0185]

[0186] The diamond wire busbar, preparation method and diamond wire provided in the embodiments of the present application are introduced in detail above. Specific examples are used in the present application to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solution and core idea of ​​the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. These modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A diamond wire busbar, characterized in that: The invention comprises a substrate (100) and a coating layer (200) coated on at least a part of the surface of the substrate (100), wherein the coating layer (200) comprises: A first metal layer (201), the first metal layer (201) being coated on at least a portion of the surface of the substrate (100); A second metal layer (202), the second metal layer (202) covering at least a portion of the surface of the first metal layer (201); A third metal layer (203), the third metal layer (203) being coated on at least a portion of the surface of the second metal layer (202); Wherein, the second metal layer (202) comprises a first metal; The third metal layer (203) comprises a second metal and a third metal, and the content of the second metal in the third metal layer (203) increases gradually in a direction away from the second metal layer (202); the third metal and the first metal are the same metal.

2. A diamond wire busbar according to claim 1, characterized in that: The mass percentage of the first metal in the second metal layer (202) is 95% to 100%; and / or, The mass percentage of the second metal on the side of the third metal layer (203) close to the second metal layer (202) is 5 to 10%; and / or, The mass percentage of the second metal on the side of the third metal layer (203) away from the second metal layer (202) is 30-35%.

3. A diamond wire busbar according to claim 1, characterized in that: The first metal is selected from copper; and / or, The second metal is selected from at least one of zinc, nickel and tin; and / or, The third metal is selected from copper; and / or, The material of the substrate (100) includes tungsten; and / or, The material of the first metal layer (201) includes nickel.

4. A diamond wire busbar according to claim 1, characterized in that: The hardness of the second metal layer (202) is lower than the hardness of the first metal layer (201), and the hardness of the second metal layer (202) is lower than the hardness of the third metal layer (203).

5. The diamond wire busbar according to claim 1, characterized in that: The hardness of the second metal layer (202) is equal to the hardness of the third metal layer (203).

6. The diamond wire busbar according to claim 1, characterized in that: The hardness of the first metal layer (201) is 130-180 HV; and / or, The hardness of the second metal layer (202) is 30 to 90 HV; and / or, The hardness of the third metal layer (203) is 60-130 HV.

7. A method for preparing a diamond wire busbar, characterized in that: The steps include: Providing a substrate (100); forming a first metal layer (201) on at least a portion of the surface of the substrate (100); forming a first intermediate layer on at least a portion of the surface of the first metal layer (201); forming a second intermediate layer on at least a portion of the surface of the first intermediate layer; Wherein, the first intermediate layer comprises a first metal, and the second intermediate layer comprises a second metal; The first intermediate layer and the second intermediate layer are subjected to a thermal diffusion treatment, so that the second metal diffuses into a portion of the first intermediate layer to form a third metal layer (203), and the remaining portion of the first intermediate layer forms a second metal layer (202).

8. The method for preparing a diamond wire busbar according to claim 7, characterized in that: The thickness of the first intermediate layer is 0.4 μm to 1.8 μm; and / or, The thickness of the second intermediate layer is 0.05 μm to 0.8 μm; and / or, The maximum radial dimension of the substrate (100) is 50 μm to 100 μm; and / or, The thickness of the first metal layer (201) is 0.02 μm to 0.25 μm; and / or, The thickness of the second metal layer (202) is 0.2 μm to 1.5 μm; and / or, The thickness of the third metal layer (203) is 0.1 μm to 0.6 μm.

9. The method for preparing a diamond wire busbar according to claim 7, characterized in that: The thermal diffusion temperature is 300° C. to 500° C.; and / or, The heat diffusion time is 8 minutes to 12 minutes.

10. The method for preparing a diamond wire busbar according to claim 7, characterized in that: The step of forming a first metal layer (201) on at least part of the surface of the substrate (100) further comprises: Providing a first plating solution, wherein the first plating solution comprises a nickel salt solution, performing a first electroplating to deposit metal nickel on the periphery of the substrate (100) to obtain the first metal layer (201); The step of forming a first intermediate layer on at least a portion of the surface of the first metal layer (201) further comprises: Providing a second plating solution, wherein the second plating solution includes a salt solution of the first metal, and performing a second electroplating to deposit the first metal on the periphery of the first metal layer (201) to obtain the first intermediate layer; The step of forming a second intermediate layer on at least a portion of the surface of the first intermediate layer further comprises: Providing a third plating solution, wherein the third plating solution includes a salt solution of the second metal, and performing a third electroplating to deposit the second metal on the periphery of the first intermediate layer to obtain the second intermediate layer; Wherein, the first metal is selected from copper, and the second metal is selected from at least one of zinc, nickel and tin.

11. The method for preparing a diamond wire busbar according to claim 10, characterized in that: The first electroplating temperature is 45°C to 60°C, and the current density is 20A / dm 2 ~40A / dm 2 and / or, The second electroplating temperature is 30°C to 50°C, and the current density is 1A / dm 2 ~20A / dm 2 and / or, The temperature of the third electroplating is 35°C to 55°C, and the current density is 1A / dm 2 ~20A / dm 2 .

12. A diamond wire, characterized in that: The present invention comprises a diamond wire busbar as claimed in any one of claims 1 to 6 or a diamond wire busbar prepared by the preparation method as claimed in any one of claims 7 to 11, and a grinding layer (300) and first particles (301); the grinding layer (300) covers at least a part of the surface of the diamond wire busbar (10), the first particles (301) are dispersed in the grinding layer (300), and at least a part of the first particles (301) protrude from the grinding layer (300).

13. The diamond wire according to claim 12, characterized in that: Second particles (302) are dispersed in the grinding layer (300); the average particle size of the second particles (302) is 10 μm to 100 μm; A fourth metal layer (400) is provided between the diamond wire busbar and the grinding layer (300); the material of the fourth metal layer (400) includes nickel.

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