Three-dimensional stacked packaging structure based on metal column interconnection and semiconductor device

Abstract

The invention provides a three-dimensional stacked packaging structure based on metal column interconnection and semiconductor equipment, and belongs to the field of semiconductor packaging, the three-dimensional stacked packaging structure comprises a side enclosure frame, a first substrate and a second substrate, the plate surfaces of the first substrate and the second substrate are parallel to each other, and the first substrate and the second substrate are oppositely arranged on the upper side and the lower side of the side enclosure frame; a packaging space is formed among the first substrate, the second substrate and the side enclosure frame, metal columns are arranged in the packaging space, the height direction of the side enclosure frame, the axial direction of the metal columns, the thickness direction of the first substrate and the thickness direction of the second substrate are all parallel to the vertical direction, and positioning holes corresponding to the metal columns are formed in the lower surface of the second substrate. First interconnection holes are formed in the first substrate, the first interconnection holes are filled with first conductors made of metal materials, and the metal columns can be connected with the first conductors. Compared with the prior art, the first conductor is arranged in the first interconnection hole, so that the technical problem that the planeness of the internal structure after three-dimensional stacking cannot be controlled in the prior art is solved.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor packaging, and more specifically, relates to a three-dimensional stacked packaging structure based on metal column interconnection. The present invention also relates to a semiconductor device. Background Art

[0002] With the increasing requirements for miniaturization, high reliability, and multi-functions of electronic devices, the process improvement and system integration of the semiconductor industry are also developing faster and faster. In order to improve the integration of packaging, three-dimensional stacking packaging is a good solution. The usual three-dimensional stacking packaging structure of ceramic substrates is to weld a metal frame on the ceramic substrate, and then weld metal columns to achieve vertical interconnection between substrates. Due to the limitations of welding process, part size processing deviation and other issues, the flatness of the welded metal frame and metal columns is generally poor, which brings great difficulties to the subsequent upper ceramic substrate alignment welding. Therefore, the flatness control of three-dimensional stacking is an urgent problem to be solved. Summary of the invention

[0003] The purpose of the present invention is to provide a three-dimensional stacked packaging structure based on metal pillar interconnection to solve the technical problem that the flatness of the internal structure after the existing three-dimensional stacking cannot be controlled.

[0004] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: to provide a three-dimensional stacked packaging structure based on metal column interconnection, including a side frame, a first substrate and a second substrate with mutually parallel board surfaces, the first substrate and the second substrate are relatively arranged on the upper and lower sides of the side frame, and a packaging space is formed between the first substrate, the second substrate and the side frame, and a metal column is arranged in the packaging space, the height direction of the side frame, the axial direction of the metal column, the thickness direction of the first substrate and the thickness direction of the second substrate are all parallel to the up and down direction, a first interconnection hole is formed inside the first substrate, and the first interconnection hole is filled with a first conductor of metal material, and the first conductor can form a passage between the upper and lower sides of the first substrate.

[0005] In a possible implementation, a first cylindrical cavity, a second cylindrical cavity and a first plate-shaped cavity are formed inside the first interconnected hole, the thickness direction of the first plate-shaped cavity is parallel to the thickness direction of the first substrate, the first cylindrical cavity and the second cylindrical cavity are respectively connected to the two ends of the first plate-shaped cavity, and one end of the first cylindrical cavity is connected to the first plate-shaped cavity, and the other end leads to the upper surface of the first substrate, one end of the second cylindrical cavity is connected to the first plate-shaped cavity, and the other end leads to the lower surface of the first substrate, and the first cylindrical cavity, the second cylindrical cavity and the first plate-shaped cavity are all filled with the first conductor.

[0006] In a possible implementation manner, both the first cylindrical cavity and the second cylindrical cavity are parallel to a thickness direction of the first substrate.

[0007] In a possible implementation, the three-dimensional packaging structure based on metal pillar interconnection further includes a metal wire, and the metal wire can connect the first conductors in any two of the first cylindrical cavities.

[0008] In a possible implementation, a first welding base is formed on the upper surface of the first substrate, and a second welding base is formed on the lower surface of the first substrate, the first welding base is connected to the first conductor located in the first cylindrical cavity, and the second welding base is connected to the first conductor located in the second cylindrical cavity.

[0009] In a possible implementation, a second interconnection hole is formed in the second substrate, and the second interconnection hole is filled with a second conductor made of a metal material, and the second conductor can form a passage between the upper and lower sides of the first substrate.

[0010] In a possible implementation, a third cylindrical cavity, a fourth cylindrical cavity, and a second plate-shaped cavity are formed inside the second interconnected hole, the axes of the third cylindrical cavity and the fourth cylindrical cavity are parallel to the up and down directions, the thickness direction of the second plate-shaped cavity is parallel to the thickness direction of the second substrate, the third cylindrical cavity and the fourth cylindrical cavity are respectively connected to the two ends of the second plate-shaped cavity, one end of the third cylindrical cavity is connected to the second plate-shaped cavity, and the other end leads to the upper surface of the second substrate, one end of the fourth cylindrical cavity is connected to the second plate-shaped cavity, and the other end leads to the lower surface of the second substrate, and the third cylindrical cavity, the fourth cylindrical cavity, and the second plate-shaped cavity are all filled with a second conductor.

[0011] In a possible implementation manner, the third cylindrical cavity and the fourth cylindrical cavity are both parallel to a thickness direction of the second substrate.

[0012] In a possible implementation, a third welding base is formed on the upper surface of the second substrate, and a fourth welding base is formed on the lower surface, the third welding base is connected to the second conductor located in the third cylindrical cavity, and the fourth welding base is connected to the second conductor located in the fourth cylindrical cavity.

[0013] Compared with the prior art, the beneficial effect of the three-dimensional stacked packaging structure based on metal pillar interconnection provided by the present invention is that: the present invention can use the first conductor filled in the first interconnection hole to form a passage on the upper and lower sides of the first substrate, so that the electronic components located on the upper and lower sides of the first substrate can be connected through the first conductor, and the connection between the metal pillar and other structures and the first interconnection hole can be made smoother by controlling the filling amount of the first conductor, solving the technical problem that the verticality of the metal pillar after welding and the flatness of the connection with the substrate cannot meet the use requirements when welding the metal pillar and other structures on the substrate due to insufficient processing margin of the substrate during the welding process of the existing electronic equipment. At the same time, the metal pillar and the first conductor filled with metal material can effectively reduce the resistance value of the overall transmission path.

[0014] Another object of the present invention is to propose a semiconductor device, comprising at least two of the above-mentioned three-dimensional stacked packaging structures based on metal pillar interconnection, wherein from bottom to top, one of the first substrates, one of the side frames, one of the second substrates and another of the side frames are arranged in sequence to form a packaging unit, and the semiconductor device includes a plurality of the packaging units stacked along a first direction.

[0015] Compared with the prior art, the semiconductor device in the present invention has all the benefits of the above-mentioned three-dimensional stacked packaging structure based on metal pillar interconnection, which will not be repeated here. In addition, in addition to the above-mentioned beneficial effects, since the flatness of the upper and lower surfaces of each substrate in each layer can meet the processing requirements, the present invention can form a multi-layer packaging structure by stacking multiple packaging units, which is beneficial to improving the integration of electronic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the prior art description. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0017] Figure 1 A partial structural schematic diagram of a three-dimensional stacked packaging structure based on metal pillar interconnection provided by the present invention;

[0018] Figure 2 It is a schematic internal cross-sectional view of a three-dimensional stacked packaging structure based on metal pillar interconnection of the present invention.

[0019] In the figure:

[0020] 1. first substrate; 11. first conductor; 111. first cylindrical cavity; 112. second cylindrical cavity; 113. first plate-shaped cavity; 114. first welding base; 115. second welding base;

[0021] 2. Side frame;

[0022] 3. Second substrate; 31. Second conductor; 311. Third cylindrical cavity; 312. Fourth cylindrical cavity; 313. Second plate cavity; 314. Third welding base; 315. Fourth welding base;

[0023] 4. Metal column. DETAILED DESCRIPTION

[0024] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other.

[0025] In the description of the present invention, it should be noted that if terms such as "upper", "lower", "inside" and "back" appear to indicate orientation or positional relationship, they are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0026] In addition, in the description of the present invention, unless otherwise clearly defined, the terms "installed", "connected", "connection", and "connector" should be understood in a broad sense. For example, the connection can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, an indirect connection through an intermediate medium, or a connection between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood in combination with specific circumstances.

[0027] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0028] Please also read Figure 1 to Figure 2, the three-dimensional stacking packaging structure based on the interconnection of metal pillars 4 provided by the present invention is now described. The three-dimensional stacking packaging structure based on the interconnection of metal pillars 4 comprises a side frame 2, a first substrate 1 and a second substrate 3 whose surfaces are parallel to each other, the first substrate 1 and the second substrate 3 are arranged on the upper and lower sides of the side frame 2 relatively, a packaging space is formed between the first substrate 1, the second substrate 3 and the side frame 2, a metal pillar 4 is arranged in the packaging space, the height direction of the side frame 2, the axial direction of the metal pillar 4, the thickness direction of the first substrate 1 and the thickness direction of the second substrate 3 are all parallel to the upper and lower directions, a positioning hole corresponding to the metal pillar 4 is formed on the lower surface of the second substrate 3, a first interconnection hole is formed inside the first substrate 1, the first interconnection hole is filled with a first conductor 11 of metal material, the first conductor 11 can form a passage between the upper and lower sides of the first substrate 1, and the metal pillar 4 is connected to the first conductor 11.

[0029] Compared with the prior art, this embodiment can form a passage on the upper and lower sides of the first substrate 1 by using the first conductor 11 filled in the first interconnection hole, so that the electronic components located on the upper and lower sides of the first substrate 1 can be connected through the first conductor 11, and the connection between the metal column 4 and the first interconnection hole can be made smoother by controlling the filling amount of the first conductor 11, solving the technical problem that the verticality of the metal column 4 after welding and the flatness of the connection with the substrate cannot meet the use requirements when welding the metal column 4 and other structures on the substrate due to insufficient processing margin of the substrate in the welding process of the existing electronic equipment. At the same time, the metal column 4 and the first conductor 11 filled with metal material can effectively reduce the resistance value of the overall transmission path.

[0030] In some feasible embodiments, a first cylindrical cavity 111, a second cylindrical cavity 112 and a first plate-shaped cavity 113 are formed inside the first interconnected hole, the thickness direction of the first plate-shaped cavity 113 is parallel to the thickness direction of the first substrate 1, the first cylindrical cavity 111 and the second cylindrical cavity 112 are respectively connected to the two ends of the first plate-shaped cavity 113, and one end of the first cylindrical cavity 111 is connected to the first plate-shaped cavity 113, and the other end leads to the upper surface of the first substrate 1, and one end of the second cylindrical cavity 112 is connected to the first plate-shaped cavity 113, and the other end leads to the lower surface of the first substrate 1, and the first cylindrical cavity 111, the second cylindrical cavity 112 and the first plate-shaped cavity 113 are all filled with the first conductor 11, and the upper surface of the first conductor 11 is lower than the first cylindrical cavity 111. The upper port of the column cavity 111, the lower surface of the first conductor 11 is higher than the lower port of the second cylindrical cavity 112; as set above, the first plate-shaped cavity 113 in this embodiment can lock the first conductor 11 filled inside to prevent the first conductor 11 from escaping from the interconnection hole. In addition, this embodiment can also make the filling of the first conductor 11 in the first cylindrical cavity 111 and the second cylindrical cavity 112 shrink inward, so that this embodiment reserves sufficient welding space for subsequent welding protrusions, and the welding pool can be filled in the welding space. While being able to form a stable connection between the first conductor 11 and the metal column 4 and other structures, it can also prevent the outer surface of the first substrate 1 from having a technical problem that the position accuracy and surface accuracy of the parts cannot meet the requirements.

[0031] It should be noted that the first substrate 1 in this embodiment is formed by splicing two or more local parts. Of course, from the perspective of part integrity, the first substrate 1 in this embodiment can be manufactured by 3D printing or lost wax method to make the overall structure of the first substrate 1 more reliable.

[0032] Based on the above embodiment, further, the first cylindrical cavity 111 and the second cylindrical cavity 112 are parallel to the thickness direction of the first substrate 1. In this embodiment, the model of the first cylindrical cavity 111 and the second cylindrical cavity 112 parallel to each other is easier to manufacture, so that the processing of the first substrate 1 in this embodiment is more convenient.

[0033] In some feasible implementations, the three-dimensional packaging structure based on the interconnection of the metal pillars 4 further includes a metal wire, which can connect the first conductors 11 in any two first cylindrical cavities 111. In this way, this embodiment can form a passage for the first conductors 11 in any two first cylindrical cavities 111 as required, thereby facilitating the connection of the first conductors 11 with devices such as chips.

[0034] In some feasible implementations, a first welding base 114 is formed on the upper surface of the first substrate 1, and a second welding base 115 is formed on the lower surface of the first substrate 1. The first welding base 114 is connected to the first conductor 11 located in the first cylindrical cavity 111, and the second welding base 115 is connected to the first conductor 11 located in the second cylindrical cavity 112. Compared with the prior art, this embodiment can realize the connection between the first conductor 11 and structures such as metal wires or metal pillars 4 through the first welding base 114 and the second welding base 115. While ensuring the flatness of the upper and lower surfaces of the first substrate 1, the first cylindrical cavity 111 and the second cylindrical cavity 112 can also be used to position the metal pillars 4 and other structures, so that the positioning of the metal pillars 4 on the first substrate 1 is more accurate, which is conducive to the development of more packaging equipment based on the first substrate 1 to improve the integration and miniaturization of electronic components.

[0035] In some feasible embodiments, a second interconnect hole is formed in the second substrate 3, and the second interconnect hole is filled with a second conductor 31 of a metal material, and the second conductor 31 can form a passage between the upper and lower sides of the first substrate 1. Similarly to the above, the second substrate 3 in this embodiment can prevent the upper and lower surfaces of the second substrate 3 from forming bulges during welding by controlling the filling amount of the second conductor 31, which is conducive to maintaining the flatness of the upper and lower surfaces of the second substrate 3, and then the three-dimensional stacked packaging structure in the present invention can grow along the up and down direction like the side away from the second substrate 3 and the side away from the first substrate 1, thereby improving the integration of the packaging structure in this embodiment and solving the technical problem that the subsequent packaging structure cannot be increased due to the processing error and flatness of the existing packaging components that cannot meet the requirements.

[0036] In some feasible embodiments, a third cylindrical cavity 311, a fourth cylindrical cavity 312 and a second plate-shaped cavity 313 are formed inside the second interconnected hole, the axes of the third cylindrical cavity 311 and the fourth cylindrical cavity 312 are parallel to the up-down direction, the thickness direction of the second plate-shaped cavity 313 is parallel to the thickness direction of the second substrate 3, the third cylindrical cavity 311 and the fourth cylindrical cavity 312 are respectively connected to the two ends of the second plate-shaped cavity 313, one end of the third cylindrical cavity 311 is connected to the second plate-shaped cavity 313, and the other end leads to the upper surface of the second substrate 3, one end of the fourth cylindrical cavity 312 is connected to the second plate-shaped cavity 313, and the other end leads to the lower surface of the second substrate 3, the third cylindrical cavity 311, the fourth cylindrical cavity 312 and the second plate-shaped cavity 313 are all filled with the second conductor 31, the upper surface of the second conductor 31 is lower than the upper port of the third cylindrical cavity 311, and the lower surface of the second conductor 31 is higher than the lower port of the fourth cylindrical cavity 312. Similar to the above, in this embodiment, the second plate-shaped cavity 313 can lock the second conductor 31 filled inside, so that the second conductor 31 is more securely positioned in the second substrate 3. In addition, since the first conductor 11 in the first cylindrical cavity 111 and the second cylindrical cavity 112 shrinks inward, the present embodiment reserves sufficient welding space for subsequent welding protrusions. After the solder forms a welding pool, it can be filled in the welding space. While being able to form a stable connection between the first conductor 11 and the metal column 4 and other structures, it can also prevent the outer surface of the first substrate 1 from having technical problems such as the position accuracy and surface accuracy of parts that cannot meet the requirements.

[0037] In some feasible implementations, the third cylindrical cavity 311 and the fourth cylindrical cavity 312 are both parallel to the thickness direction of the second substrate 3, so that the internal model of the second interconnected hole is easier to process and manufacture.

[0038] Based on the above embodiment, further, a third welding base 314 is formed on the upper surface of the second substrate 3, and a fourth welding base 315 is formed on the lower surface. The third welding base 314 is connected to the second conductor 31 located in the third cylindrical cavity 311, and the fourth welding base 315 is connected to the second conductor 31 located in the fourth cylindrical cavity 312. Compared with the prior art, the present embodiment can realize the connection between the second conductor 31 and structures such as metal wires or metal pillars 4 through the third welding base 314 and the fourth welding base 315, and can ensure the flatness of the upper and lower surfaces of the second substrate 3, and can also position the structures such as metal pillars 4 through the third cylindrical cavity 311 and the fourth cylindrical cavity 312, so that the positioning of the metal pillars 4 on the second substrate 3 is more accurate, which is conducive to the development of more packaging equipment based on the second substrate 3, so as to improve the integration and miniaturization of electronic components.

[0039] In summary, the present embodiment can form a passage on the upper and lower sides of the first substrate 1 by using the first conductor 11 filled in the first interconnection hole, so that the electronic components located on the upper and lower sides of the first substrate 1 can be connected through the first conductor 11, and the connection between the metal column 4 and the first interconnection hole can be made smoother by controlling the filling amount of the first conductor 11, thereby solving the technical problem that the verticality of the metal column 4 after welding and the flatness of the connection with the substrate cannot meet the use requirements when the metal column 4 and the like are welded on the substrate due to insufficient processing allowance of the substrate during the welding process of the existing electronic equipment. In addition, the present invention can develop a three-dimensional stacking structure with the first substrate 1 as the base by using the first conductor 11 filled in the first substrate 1, and develop a three-dimensional stacking structure with the second substrate 3 as the base by using the second conductor 31 filled in the second substrate 3, thereby improving the integration and reliability of the three-dimensional stacking packaging structure of the present invention, and solving the technical problem that the existing three-dimensional packaging structure cannot be expanded along the set direction due to unreasonable internal welding process and structural setting.

[0040] Based on the same inventive concept, the present invention also proposes a semiconductor device, which includes at least two of the above-mentioned three-dimensional stacked packaging structures interconnected by metal pillars 4, and from bottom to top, a first substrate 1, a side frame 2, a second substrate 3 and another side frame 2 are arranged in sequence to form a packaging unit, and the semiconductor device includes multiple packaging units stacked along a first direction.

[0041] Compared with the prior art, the semiconductor device in the present invention has all the benefits of the above-mentioned three-dimensional stacked packaging structure based on the interconnection of metal pillars 4, which will not be repeated here. In addition, in addition to the above-mentioned beneficial effects, since the flatness of the upper and lower surfaces of each substrate in each layer can meet the processing requirements, the present invention can form a multi-layer packaging structure by stacking multiple packaging units, which is beneficial to improving the integration of electronic devices.

[0042] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A three-dimensional stacked packaging structure based on metal pillar interconnection, characterized in that: The invention comprises a side frame (2), a first substrate (1) and a second substrate (3) whose surfaces are parallel to each other, wherein the first substrate (1) and the second substrate (3) are arranged on the upper and lower sides of the side frame (2) relatively to each other, and a packaging space is formed between the first substrate (1), the second substrate (3) and the side frame (2), and a metal column (4) is arranged in the packaging space, and the height direction of the side frame (2), the axial direction of the metal column (4), the thickness direction of the first substrate (1) and the thickness direction of the second substrate (3) are all parallel to the upper and lower directions, and a first interconnection hole is formed inside the first substrate (1), and the first interconnection hole is filled with a first conductor (11) made of a metal material, and the first conductor (11) can form a passage between the upper and lower sides of the first substrate (1), and the metal column (4) can be connected to the first conductor (11).

2. The three-dimensional stacked packaging structure based on metal pillar interconnection according to claim 1, characterized in that: A first cylindrical cavity (111), a second cylindrical cavity (112) and a first plate-shaped cavity (113) are formed inside the first interconnected hole; the thickness direction of the first plate-shaped cavity (113) is parallel to the thickness direction of the first substrate (1); the first cylindrical cavity (111) and the second cylindrical cavity (112) are respectively connected to two ends of the first plate-shaped cavity (113); one end of the first cylindrical cavity (111) is connected to the first plate-shaped cavity (113), and the other end is connected to the first substrate (1). The first cylindrical cavity (111) is connected to the upper surface of the first plate-shaped cavity (113), one end of the second cylindrical cavity (112) is connected to the first plate-shaped cavity (113), and the other end leads to the lower surface of the first substrate (1); the first cylindrical cavity (111), the second cylindrical cavity (112) and the first plate-shaped cavity (113) are all filled with the first conductor (11); the upper surface of the first conductor (11) is lower than the upper port of the first cylindrical cavity (111), and the lower surface of the first conductor (11) is higher than the lower port of the second cylindrical cavity (112).

3. The three-dimensional stacked packaging structure based on metal pillar interconnection according to claim 2, characterized in that: The first cylindrical cavity (111) and the second cylindrical cavity (112) are both parallel to the thickness direction of the first substrate (1).

4. The three-dimensional stacked packaging structure based on metal pillar interconnection according to claim 3, characterized in that: The three-dimensional packaging structure based on metal pillar interconnection further comprises a metal wire, and the metal wire can connect the first conductors (11) in any two of the first cylindrical cavities (111).

5. The three-dimensional stacked packaging structure based on metal pillar interconnection according to claim 4, characterized in that: A first welding base (114) is formed on the upper surface of the first substrate (1), and a second welding base (115) is formed on the lower surface of the first substrate (1); the first welding base (114) is connected to the first conductor (11) located in the first cylindrical cavity (111), and the second welding base (115) is connected to the first conductor (11) located in the second cylindrical cavity (112).

6. The three-dimensional stacked packaging structure based on metal pillar interconnection according to claim 1, characterized in that: A second interconnection hole is formed in the second substrate (3), and a second conductor (31) made of a metal material is filled in the second interconnection hole. The second conductor (31) can form a passage between the upper and lower sides of the first substrate (1).

7. The three-dimensional stacked packaging structure based on metal pillar interconnection according to claim 6, characterized in that: A third cylindrical cavity (311), a fourth cylindrical cavity (312) and a second plate-shaped cavity (313) are formed inside the second interconnected hole. The axial directions of the third cylindrical cavity (311) and the fourth cylindrical cavity (312) are parallel to the up-down direction. The thickness direction of the second plate-shaped cavity (313) is parallel to the thickness direction of the second substrate (3). The third cylindrical cavity (311) and the fourth cylindrical cavity (312) are respectively connected to two ends of the second plate-shaped cavity (313). One end of the third cylindrical cavity (311) is connected to the second plate-shaped cavity (313), and the other end leads to the upper surface of the second substrate (3). One end of the fourth cylindrical cavity (312) is connected to the second plate-shaped cavity (313), and the other end leads to the lower surface of the second substrate (3). The third cylindrical cavity (311), the fourth cylindrical cavity (312) and the second plate-shaped cavity (313) are all filled with a second conductor (31).

8. The three-dimensional stacked packaging structure based on metal pillar interconnection according to claim 7, characterized in that: The third cylindrical cavity (311) and the fourth cylindrical cavity (312) are both parallel to the thickness direction of the second substrate (3).

9. The three-dimensional stacked packaging structure based on metal pillar interconnection according to claim 7, characterized in that: A third welding base (314) is formed on the upper surface of the second substrate (3), and a fourth welding base (315) is formed on the lower surface; the third welding base (314) is connected to the second conductor (31) located in the third cylindrical cavity (311), and the fourth welding base (315) is connected to the second conductor (31) located in the fourth cylindrical cavity (312).

10. A semiconductor device, characterized in that: The invention comprises at least two three-dimensional stacked packaging structures based on metal pillar interconnection as described in any one of claims 1 to 9, wherein from bottom to top, one of the first substrates (1), one of the side frames (2), one of the second substrates (3) and another of the side frames (2) are arranged in sequence to form a packaging unit, and the semiconductor device comprises a plurality of the packaging units stacked along a first direction.

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