Filter structure

Abstract

The invention discloses a filter structure which comprises a first metal layer, a first dielectric layer, a first semi-solidified layer, a second metal layer, a second dielectric layer, a third metal layer, a second semi-solidified layer, a fourth metal layer, a third dielectric layer and a fifth metal layer which are sequentially arranged in a stacked mode in the first direction. The second metal layer and the third metal layer comprise a plurality of resonators arranged at intervals; the plurality of resonators are arranged along a second direction, each resonator comprises a first part and a second part, the first part is located on the second metal layer and extends along a third direction, and the second part is located on the third metal layer and extends along the third direction; the first part and the second part of each resonator are connected through a first metal through hole; the first end of each resonator is connected with the first metal layer and the fifth metal layer through a second metal via hole, and the second end of each resonator is an open circuit end. The device size can be reduced, and device integration is facilitated.

Description

Technical Field

[0001] The present invention relates to the technical field of filters, and in particular to a filter structure. Background Art

[0002] As an indispensable and important component in radio frequency circuits and wireless communication systems, the performance of filters determines the performance and quality of the entire microwave system. However, the existing filters are large in size, which is not conducive to the integration of devices. Summary of the invention

[0003] The invention provides a filter structure, which can reduce the size of a device and facilitate the integration of the device.

[0004] According to one aspect of the present invention, there is provided a filter structure, comprising:

[0005] A first metal layer, a first dielectric layer, a first semi-cured layer, a second metal layer, a second dielectric layer, a third metal layer, a second semi-cured layer, a fourth metal layer, a third dielectric layer and a fifth metal layer are sequentially stacked along a first direction;

[0006] The second metal layer and the third metal layer include a plurality of resonators arranged at intervals; the plurality of resonators are arranged along the second direction, each resonator includes a first part and a second part, the first part is located in the second metal layer and extends along the third direction, the second part is located in the third metal layer and extends along the third direction; the first part and the second part of each resonator are connected through a first metal via; the first end of each resonator is connected to the first metal layer and the fifth metal layer through a second metal via, and the second end of each resonator is an open end; wherein the first direction is perpendicular to the second direction and the third direction, and the second direction and the third direction intersect with each other.

[0007] Optionally, the fourth metal layer is a capacitor structure, the capacitor structure includes a first capacitor plate, a connecting plate and a second capacitor plate; the first capacitor plate and the second capacitor plate both extend along the third direction, and the connecting plate extends along the second direction; the first capacitor plate and the second capacitor plate are connected via the connecting plate;

[0008] The first capacitor plate and the second capacitor plate are respectively located at open ends of different resonators.

[0009] Optionally, the plurality of resonators include a first resonator, a second resonator, a third resonator, a fourth resonator, a fifth resonator, a sixth resonator, a seventh resonator and an eighth resonator;

[0010] The vertical projection of the first capacitor plate on the first metal layer is located within the vertical projection of the third resonator on the first metal layer, and the vertical projection of the second capacitor plate on the first metal layer is located within the vertical projection of the fifth resonator on the first metal layer.

[0011] Optionally, a plurality of resonators are arranged in parallel, and the first portion and the second portion of each resonator are parallel.

[0012] Optionally, the lengths of the second portions of the plurality of resonators extending along the third direction are at least partially different.

[0013] Optionally, the lengths of the first portions of the plurality of resonators extending along the third direction are at least partially different; or, the lengths of the first portions of the plurality of resonators extending along the third direction are the same.

[0014] Optionally, along the third direction, the resonator includes a first side and a second side that are arranged opposite to each other;

[0015] The first metal vias of the multiple resonators are located on the first side, and the second metal vias of the multiple resonators are located on the second side; or, the first metal vias of the multiple resonators are located on different sides.

[0016] Optionally, when the first metal vias of the plurality of resonators are located on different sides,

[0017] The first metal vias of the first resonator, the second resonator, the fourth resonator, and the sixth resonator are located on the first side, and the second metal vias of the first resonator, the second resonator, the fourth resonator, and the sixth resonator are located on the second side;

[0018] The first metal vias of the third resonator, the fifth resonator, the seventh resonator, and the eighth resonator are located on the second side, and the second metal vias of the first resonator, the second resonator, the fourth resonator, and the sixth resonator are located on the first side.

[0019] Optionally, along the second direction, the spacing between the multiple resonators is greater than 0.1 mm.

[0020] The filter structure provided by the technical solution of the embodiment of the present invention includes: a first metal layer, a first dielectric layer, a first semi-cured layer, a second metal layer, a second dielectric layer, a third metal layer, a second semi-cured layer, a fourth metal layer, a third dielectric layer and a fifth metal layer are stacked in sequence along a first direction; the second metal layer and the third metal layer include a plurality of resonators arranged at intervals; the plurality of resonators are arranged along a second direction, each resonator includes a first part and a second part, the first part is located in the second metal layer, and the first part extends along a third direction, the second part is located in the third metal layer, and the second part extends along the third direction; the first part and the second part of each resonator are connected through a first metal via; the first end of each resonator is connected to the first metal layer and the fifth metal layer through a second metal via, and the second end of each resonator is an open end; wherein the first direction is perpendicular to the second direction and the third direction, and the second direction and the third direction intersect each other. In the embodiment of the present invention, the second metal layer is connected to the third metal layer through the first metal via, and the finger strips of the resonator are folded, from a traditional one strip to two layers, thereby increasing the length of the resonator, making the length of the resonator longer, but not occupying the size of the device in the third direction. Through this double-layer resonator structure, the resonator that originally needs to be relatively long can be shortened and turned into a stacked layer, thereby reducing the device size and facilitating device integration.

[0021] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0023] Figure 1 It is a structural schematic diagram of a filter provided by an embodiment of the present invention.

[0024] Figure 2 It is a structural front view of a filter provided by an embodiment of the present invention.

[0025] Figure 3 It is a top view of the structure of a filter provided by an embodiment of the present invention.

[0026] Figure 4 It is a frequency insertion loss schematic diagram provided by an embodiment of the present invention.

[0027] Figure 5It is a top view of the structure of another filter provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0028] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0029] It should be noted that the terms "first", "second", etc. in the present invention are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products, or devices.

[0030] The embodiment of the present invention provides a filter structure. Figure 1 is a schematic diagram of the structure of a filter provided by an embodiment of the present invention, Figure 1 Specifically, it is a schematic diagram of the structure of the main component layer of the filter; Figure 2 is a structural front view of a filter provided by an embodiment of the present invention, Figure 2 Specifically, it is a perspective view of the overall structure of the main view of the filter; Figure 3 is a top view of the structure of a filter provided by an embodiment of the present invention, Figure 3 Specifically, it is a perspective view of the top view of the filter; refer to Figure 1-Figure 3 , the filter structure includes:

[0031] Along the first direction X, the first metal layer 10, the first dielectric layer 61, the first semi-cured layer 71, the second metal layer 20, the second dielectric layer 62, the third metal layer 30, the second semi-cured layer 72, the fourth metal layer 40, the third dielectric layer 63 and the fifth metal layer 50 are stacked in sequence.

[0032] The second metal layer 20 and the third metal layer 30 include a plurality of resonators 11 disposed at intervals; the plurality of resonators 11 are arranged along a second direction Y, and each resonator 11 includes a first portion 111 and a second portion 112, the first portion 111 is located in the second metal layer 20, and the first portion 111 extends along a third direction Z, the second portion 112 is located in the third metal layer 30, and the second portion 112 extends along the third direction Z; the first portion 111 and the second portion 112 of each resonator 11 are connected via a first metal via 01; a first end of each resonator 11 is connected to the first metal layer 10 and the fifth metal layer 50 via a second metal via 02, and a second end of each resonator 11 is an open end; wherein the first direction X is perpendicular to the second direction Y and the third direction Z, and the second direction Y and the third direction Z intersect with each other.

[0033] Among them, the filter can be a 2.4G-3.2G high suppression filter; the filter includes a first feeding port and a second feeding port, which are used as input and output ports; the filter includes five metal layers, three dielectric layers and two semi-cured layers, the five metal layers include a first metal layer 10, a second metal layer 20, a third metal layer 30, a fourth metal layer 40 and a fifth metal layer 50, and the material of each metal layer can be a copper layer; the three dielectric layers include a first dielectric layer 61, a second dielectric layer 62 and a third dielectric layer 63, the material of each dielectric layer can include a resin material, and the function of each dielectric layer can be used as a supporting layer for the upper and lower metal layers; the two semi-cured layers include a first semi-cured layer 71 and a second semi-cured layer 72, and the model of each semi-cured layer can include Rogers 4450F, Rogers 4450B, Rogers 4450T and Rogers 4460G; the function of each semi-cured layer can be used as an adhesive to bond the upper and lower layers. The first metal via 01 and the second metal via 02 are both electrically connected by plating a layer of metal on the side walls of the vias, and then the inside of the metal-plated vias can be filled with resin.

[0034] Specifically, each resonator 11 includes a first part 111 and a second part 112, the first part 111 is located in the second metal layer 20, and the second part 112 is located in the third metal layer 30. The first part 111 and the second part 112 of each resonator 11 are connected through the first metal via 01; the second metal layer 20 is connected to the third metal layer 30 through the first metal via 01, and the finger strips of the resonator 11 are folded, from a traditional one to two layers, increasing the length of the resonator 11, so that the length of the resonator 11 is longer, but does not occupy the size of the device in the third direction Z. Through this double-layer resonator structure, the resonator that originally needs to be relatively long can be shortened and turned into a stack, reducing the size of the device and facilitating device integration. The size of a conventional 2.4G-3.2G substrate filter may be about 5mm*30mm, and the size of the embodiment of the present invention is 5mm*10mm, which can greatly reduce the volume and facilitate the miniaturization of the device.

[0035] The filter structure provided by the technical solution of the embodiment of the present invention comprises: a first metal layer 10, a first dielectric layer 61, a first semi-cured layer 71, a second metal layer 20, a second dielectric layer 62, a third metal layer 30, a second semi-cured layer 72, a fourth metal layer 40, a third dielectric layer 63 and a fifth metal layer 50 are stacked in sequence along a first direction X; the second metal layer 20 and the third metal layer 30 include a plurality of resonators 11 arranged at intervals; the plurality of resonators 11 are arranged along a second direction Y, each resonator 11 includes a first portion 111 and a second portion 112, the first portion 111 includes a first portion 112, and the second portion 112 includes a first portion 113; the first portion 114 includes a first portion 115; the second portion 116 includes a first portion 117; the second portion 118 includes a first portion 119; the second portion 119 includes a second portion 1111; the first portion 111 includes a second portion 112; the second portion 114 includes a first portion 1112; the second portion 116 includes a first portion 1113; the second portion 118 includes a first portion 1114; the second portion 118 includes a first portion 1115; the second portion 118 includes a first portion 1116; the second portion 118 includes a first portion 1116; the second portion 118 includes a first portion 1117; the second portion 118 includes a first portion 1117; the second portion 118 includes a first portion 111 11 is located in the second metal layer 20, and the first part 111 extends along the third direction Z, the second part 112 is located in the third metal layer 30, and the second part 112 extends along the third direction Z; the first part 111 and the second part 112 of each resonator 11 are connected through the first metal via 01; the first end of each resonator 11 is connected to the first metal layer 10 and the fifth metal layer 50 through the second metal via 02, and the second end of each resonator 11 is an open end; wherein the first direction X is perpendicular to the second direction Y and the third direction Z, and the second direction Y and the third direction Z intersect each other. In the embodiment of the present invention, the second metal layer 20 is connected to the third metal layer 30 through the first metal via 01, and the finger strips of the resonator 11 are folded, from a traditional one to two layers, so as to increase the length of the resonator 11, so that the length of the resonator 11 is longer, but does not occupy the size of the device in the third direction Z. Through this double-layer resonator structure, the resonator that originally needs to be relatively long can be shortened and turned into a stacked layer, thereby reducing the device size and facilitating device integration.

[0036] Optional, reference Figure 3The fourth metal layer 40 is a capacitor structure 41, which includes a first capacitor plate 401, a connecting plate 403 and a second capacitor plate 402; the first capacitor plate 401 and the second capacitor plate 402 both extend along a third direction Z, and the connecting plate 403 extends along a second direction Y; the first capacitor plate 401 and the second capacitor plate 402 are connected through the connecting plate 403; the first capacitor plate 401 and the second capacitor plate 402 are respectively located at the open ends of different resonators 11.

[0037] Among them, the capacitor structure 41 can form a capacitive coupling, and the first capacitor plate 401 and the second capacitor plate 402 are respectively located at the open ends of different resonators 11. The electric field at the open ends is stronger. The closer the first capacitor plate 401 and the second capacitor plate 402 are to the open ends of the resonator 11, the better the suppression effect is achieved. Figure 4 is a frequency insertion loss schematic diagram provided by an embodiment of the present invention, with reference to Figure 4 , the horizontal axis is frequency, and the vertical axis is insertion loss; S(2,1) is the curve after adding the capacitor structure, and S(6,5) is the curve without adding the capacitor structure; the capacitor structure will produce a transmission zero point at the black circle on the left side of the passband; Figure 4 In the figure, m1, m2, m5 and m6 respectively represent the insertion losses under different curves at different frequencies. For example, m5 indicates that at 1.9 GHz, the insertion loss of the curve of S(2, 1) with a capacitor structure added is -65.920 dB, and the insertion loss of the curve of S(6, 5) without a capacitor structure added is -50.312 dB. The embodiment of the invention adds capacitor coupling to make the filter with a capacitor structure have better out-of-band suppression.

[0038] Optional, reference Figure 3 The plurality of resonators 11 include a first resonator 21 , a second resonator 22 , a third resonator 23 , a fourth resonator 24 , a fifth resonator 25 , a sixth resonator 26 , a seventh resonator 27 and an eighth resonator 28 .

[0039] The vertical projection of the first capacitor plate on the first metal layer 10 is located within the vertical projection of the third resonator 23 on the first metal layer 10 , and the vertical projection of the second capacitor plate on the first metal layer 10 is located within the vertical projection of the fifth resonator 25 on the first metal layer 10 .

[0040] in, Figure 3 The device includes 8 resonators, the vertical projection of the first capacitor plate on the first metal layer 10 is located within the vertical projection of the third resonator 23 on the first metal layer 10, the vertical projection of the second capacitor plate on the first metal layer 10 is located within the vertical projection of the fifth resonator 25 on the first metal layer 10, the closer the first capacitor plate 401 and the second capacitor plate 402 are to the open end of the resonator 11, the better the suppression effect is achieved, and the capacitor structure will be in the passband Figure 4A transmission zero is created at the black circle on the left, which makes the filter have better out-of-band suppression.

[0041] Optional, reference Figure 3 , a plurality of resonators 11 are arranged in parallel, and a first portion 111 and a second portion 112 of each resonator 11 are parallel.

[0042] The plurality of resonators 11 are arranged in parallel, and the first portion 111 and the second portion 112 of each resonator 11 are parallel, so that the process is simple and more conducive to the integration of the device.

[0043] Optional, Figure 5 is a top view of the structure of another filter provided by an embodiment of the present invention, referring to Figure 3 and Figure 5 , the lengths of the second portions 112 of the plurality of resonators 11 extending along the third direction Z are at least partially different.

[0044] The second parts 112 of the plurality of resonators 11 have at least partially different lengths extending along the third direction Z. The longer the length of each resonator is, the lower the frequency to be affected is. The length can be specifically set according to actual needs.

[0045] Optional, reference Figure 5 , the lengths of the first portions 111 of the plurality of resonators 11 extending along the third direction Z are at least partially different; or, with reference to Figure 3 The first portions 111 of the plurality of resonators 11 have the same length extending along the third direction Z.

[0046] Among them, reference Figure 5 , the lengths of the second portions 112 of the plurality of resonators 11 extending along the third direction Z are at least partially different, and the lengths of the first portions 111 of the plurality of resonators 11 extending along the third direction Z are at least partially different; or, with reference to Figure 3 The lengths of the second parts 112 of the multiple resonators 11 extending along the third direction Z are at least partially different, and the lengths of the first parts 111 of the multiple resonators 11 extending along the third direction Z are the same; the longer the length of the resonator, the lower the frequency to be affected, which can be specifically set according to actual needs.

[0047] Optional, reference Figure 3 and Figure 5 , along the third direction Z, the resonator 11 includes a first side and a second side that are arranged opposite to each other; the first metal vias 01 of the plurality of resonators 11 are located on the first side, and the second metal vias 02 of the plurality of resonators 11 are located on the second side; or, the first metal vias 01 of the plurality of resonators 11 are located on different sides.

[0048] Among them, reference Figure 3 and Figure 5, along the third direction Z, the resonator 11 includes a first side and a second side that are arranged opposite to each other; illustratively, the first side may be Figure 3 or Figure 5 The left side of the second side can be Figure 3 or Figure 5 on the right side; the first metal vias 01 of the multiple resonators 11 are located on the first side, and the second metal vias 02 of the multiple resonators 11 are located on the second side, indicating that the first metal vias 01 of each resonator 11 are arranged on the first side, and the second metal vias 02 of each resonator 11 are arranged on the second side; the first metal vias 01 of the multiple resonators 11 are located on different sides, indicating that the first metal vias 01 and the second metal vias 02 of different resonators can be located on different sides. Exemplarily, they can be staggered, the first metal via 01 of the first resonator 21 is arranged on the first side, the second metal via 02 of the first resonator 21 is arranged on the second side, the second metal via 02 of the second resonator 22 is arranged on the first side, and the first metal via 01 of the second resonator 22 is arranged on the second side, the third resonator 23 is arranged the same as the first resonator 21, the fourth resonator 24 is arranged the same as the second resonator 22, and so on, to meet different filtering requirements.

[0049] Optionally, in the case where the first metal vias 01 of multiple resonators 11 are located on different sides, the first metal vias 01 of the first resonator 21, the second resonator 22, the fourth resonator 24 and the sixth resonator 26 are located on the first side, and the second metal vias 02 of the first resonator 21, the second resonator 22, the fourth resonator 24 and the sixth resonator 26 are located on the second side; the first metal vias 01 of the third resonator 23, the fifth resonator 25, the seventh resonator 27 and the eighth resonator 28 are located on the second side, and the second metal vias 02 of the first resonator 21, the second resonator 22, the fourth resonator 24 and the sixth resonator 26 are located on the first side.

[0050] in, Figure 3 and Figure 5 The structure of the filter is that the first metal via 01 of the first resonator 21, the second resonator 22, the fourth resonator 24 and the sixth resonator 26 is located on the first side, and the second metal via 02 of the first resonator 21, the second resonator 22, the fourth resonator 24 and the sixth resonator 26 is located on the second side; the first metal via 01 of the third resonator 23, the fifth resonator 25, the seventh resonator 27 and the eighth resonator 28 is located on the second side, and the second metal via 02 of the first resonator 21, the second resonator 22, the fourth resonator 24 and the sixth resonator 26 is located on the first side, which can achieve better filtering effect and make the filter have better out-of-band suppression.

[0051] Optional, reference Figure 3 and Figure 5, along the second direction Y, the spacing between the multiple resonators 11 is greater than 0.1 mm.

[0052] The spacing between the multiple resonators 11 is greater than 0.1 mm, which makes the manufacturing process simpler and the device has a higher degree of integration.

[0053] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0054] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A filter structure, characterized in that: include: A first metal layer, a first dielectric layer, a first semi-cured layer, a second metal layer, a second dielectric layer, a third metal layer, a second semi-cured layer, a fourth metal layer, a third dielectric layer and a fifth metal layer are sequentially stacked along a first direction; The second metal layer and the third metal layer include a plurality of resonators arranged at intervals; the plurality of resonators are arranged along a second direction, and each of the resonators includes a first part and a second part, the first part is located in the second metal layer, and the first part extends along a third direction, the second part is located in the third metal layer, and the second part extends along the third direction; the first part and the second part of each of the resonators are connected through a first metal via; the first end of each of the resonators is connected to the first metal layer and the fifth metal layer through a second metal via, and the second end of each of the resonators is an open end; wherein the first direction is perpendicular to the second direction and the third direction, and the second direction and the third direction intersect with each other.

2. The filter structure according to claim 1, characterized in that: The fourth metal layer is a capacitor structure, and the capacitor structure includes a first capacitor plate, a connecting plate, and a second capacitor plate; the first capacitor plate and the second capacitor plate both extend along a third direction, and the connecting plate extends along a second direction; the first capacitor plate and the second capacitor plate are connected via the connecting plate; The first capacitor plate and the second capacitor plate are respectively located at open ends of different resonators.

3. The filter structure according to claim 2, characterized in that: The plurality of resonators include a first resonator, a second resonator, a third resonator, a fourth resonator, a fifth resonator, a sixth resonator, a seventh resonator, and an eighth resonator; The vertical projection of the first capacitor plate on the first metal layer is located within the vertical projection of the third resonator on the first metal layer, and the vertical projection of the second capacitor plate on the first metal layer is located within the vertical projection of the fifth resonator on the first metal layer.

4. The filter structure according to claim 1, characterized in that: A plurality of resonators are arranged in parallel, and the first portion and the second portion of each of the resonators are parallel.

5. The filter structure according to claim 1, characterized in that: The second portions of the plurality of resonators have at least partially different lengths extending along the third direction.

6. The filter structure according to claim 4, characterized in that: The lengths of the first portions of the plurality of resonators extending along the third direction are at least partially different; or the lengths of the first portions of the plurality of resonators extending along the third direction are the same.

7. The filter structure according to claim 1, characterized in that: Along the third direction, the resonator includes a first side and a second side disposed opposite to each other; A plurality of first metal vias of the resonators are located on the first side, and a plurality of second metal vias of the resonators are located on the second side; Alternatively, the first metal vias of the plurality of resonators are located at different sides.

8. The filter structure according to claim 3, characterized in that: In the case where the first metal vias of the plurality of resonators are located on different sides, The first metal vias of the first resonator, the second resonator, the fourth resonator, and the sixth resonator are located on the first side, and the second metal vias of the first resonator, the second resonator, the fourth resonator, and the sixth resonator are located on the second side; The first metal vias of the third resonator, the fifth resonator, the seventh resonator, and the eighth resonator are located on the second side, and the second metal vias of the first resonator, the second resonator, the fourth resonator, and the sixth resonator are located on the first side.

9. The filter structure according to claim 1, characterized in that: Along the second direction, the spacing between the plurality of resonators is greater than 0.1 mm.

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