Patterned light-emitting quantum dot film layer, preparation method and application

Abstract

The invention relates to a patterned light-emitting quantum dot thin film layer, a preparation method and application. The patterned light-emitting quantum dot thin film layer comprises at least one arrangement unit layer, and the arrangement unit layer comprises at least one light-emitting functional area and at least one charge transfer area which are periodically arranged at intervals in the same arrangement direction; the light-emitting functional area is thicker than the charge transfer area; the light-emitting functional areas and the charge transfer areas are continuously distributed, have the same material composition and are light-emitting quantum dots; the light-emitting functional region and the charge transfer region have a substantially flush surface defined as a first surface. According to the light-emitting quantum dot thin film layer provided by the invention, the whole light-emitting quantum dot thin film layer can be controlled only by arranging one group of conductive structures; the color interference problem in the prior art can be avoided, electric leakage can be reduced, and electric energy loss can be reduced.

Description

Technical Field

[0001] The present invention belongs to the field of display technology, relates to the field of patterned film preparation, and specifically relates to a patterned luminescent quantum dot film layer, a preparation method and use thereof. Background Art

[0002] Quantum dot light-emitting diode (QLED) is known as a new generation of display technology for its advantages such as narrow emission, wide color gamut and stability. With the industry's demand for small and portable display products, patterned QLED is urgently needed, especially high-resolution patterned QLED. As the resolution increases, the design of electronic devices becomes more complicated, and each light-emitting component needs to be electrically connected. At high resolution, circuit design and circuit control also become complicated.

[0003] On the other hand, the improvement of the pixel resolution of patterned QLED is mostly limited to issues such as the cost of film material preparation and equipment accuracy, which makes the preparation of high-resolution patterned QLED face huge challenges, especially the resolution of pattern units is difficult to break through the sub-micron size. Displays require a more comfortable visual experience and compact equipment design. The pore area between pattern units and the area ratio of pattern units will affect these performances. Usually a high aperture ratio indicates that the effective display area accounts for a relatively large proportion, which is beneficial to the display. But at the same time, new problems will also arise, such as the difficulty in evacuating heat dissipation, resulting in heating of the body, and the mechanical strength of the display device.

[0004] Patterned films are usually used to make the light-emitting layer of QLED. The patterned preparation of the light-emitting layer is an important part of standard display. How to simplify the difficulty of circuit design, improve the yield rate and reduce the difficulty of operation through the structural design of patterned films is a problem that needs to be solved in this field.

[0005] In addition, in order to avoid mutual interference between adjacent pattern light modulation processes, a multi-step process is usually required, such as pre-preparing a pattern blocking layer to prevent the mutual influence of adjacent pixel light sources, and then preparing the light-emitting layer material. The pattern formed is usually of micro-nano scale, which can ensure the high-definition and high-brightness functions of the display product. How to reduce the interference between adjacent pixels and improve the display effect of the product through the structural design of the device is also a technical problem that needs to be solved in this field.

[0006] On the other hand, by improving the accuracy and area of ​​the patterned film, it is hoped that the resolution and yield of QLED can be effectively improved.

[0007] There is an urgent need in this field to develop a thin film structure that can reduce the difficulty of circuit design in QLED, so as to improve production efficiency and ensure product quality. Summary of the invention

[0008] In view of the shortcomings of the prior art, one of the purposes of the present invention is to provide a patterned luminescent quantum dot film layer, wherein the quantum dot film layer comprises at least one arrangement unit layer, wherein the arrangement unit layer comprises at least one luminescent functional region and at least one charge transfer region periodically arranged along the same arrangement direction; the thickness of the luminescent functional region is greater than that of the charge transfer region;

[0009] The light-emitting functional area and the charge transfer area are continuously distributed and have the same material composition, and are all light-emitting quantum dots;

[0010] The light emitting functional area and the charge transfer area have a substantially flush surface, which is defined as a first surface.

[0011] The luminescent functional area described in the present application responds to light, electricity, and magnetism, while the charge transfer area provides connection and transmission functions for the luminescent functional area. The present application periodically designs the luminescent functional area and the charge transfer area to electrically connect all the luminescent functional areas together through the charge transfer area. Only one set of conductive structures needs to be set up to achieve control of the entire luminescent quantum dot thin film layer.

[0012] It should be noted that the quantum dot film layer may include one arrangement unit layer or two or more arrangement unit layers. The film spreading direction of the quantum dot film layer is the same as the spreading direction of the arrangement unit layer, that is, under normal circumstances, the arrangement unit layer appears in a layer structure, and when the quantum dot film layer includes two or more arrangement unit layers, the quantum dot film layer includes a structure of two or more layers.

[0013] Preferably, the light-emitting functional area is linear, and the linear extension direction of the light-emitting functional area is perpendicular to the arrangement direction.

[0014] Preferably, the light-emitting functional area is in a straight line, a wavy line or a broken line shape.

[0015] Preferably, in the same arrangement unit layer, the shapes of the light-emitting functional areas are the same.

[0016] Preferably, in the same arrangement unit layer, the charge transfer regions have the same shape.

[0017] It should be noted that, in the same arrangement unit layer, the shapes of the light-emitting functional area and the charge transfer area can be independently selected to be the same or different.

[0018] Preferably, the thickness difference between the light-emitting functional area and the charge transfer area is 5nm to 10μm, for example, 8nm, 10nm, 50nm, 100nm, 300nm, 400nm, 500nm, 700nm, 900nm, 1μm, 10μm, etc., preferably 20nm to 3μm.

[0019] A suitable thickness difference between the light-emitting functional area and the charge transfer area can provide optimized carrier transport capacity, promote radiative recombination in the light-emitting functional area and inhibit radiative recombination in the charge transfer area. If the thickness difference is too small, color crosstalk between adjacent patterns will occur, and the pattern will not be obvious under electrostatic irradiation. If the thickness difference is too large, the charge cannot undergo radiative recombination in time and accumulates excessively, posing a risk of leakage.

[0020] Preferably, the width of the light-emitting functional area is 1 μm to 50 μm, for example, 1 μm, 8 μm, 12 μm, 15 μm, 20 μm, 25 μm, 30 μm, 37 μm, 40 μm, 48 μm, etc., preferably 50 nm to 20 μm.

[0021] Preferably, the thickness of the light-emitting functional area is 5 nm to 10 μm, for example, 7 nm, 12 nm, 18 nm, 20 nm, 26 nm, 32 nm, 38 nm, 41 nm, 55 nm, 64 nm, 78 nm, 93 nm, 1 μm, 3 μm, 7 μm, 9 μm, etc.

[0022] Preferably, the width of the charge transfer zone is 1 μm to 150 μm, for example, 1 μm, 30 μm, 70 μm, 90 μm, 100 μm, 110 μm, 140 μm, etc.

[0023] Preferably, the thickness of the charge transfer region is 5 nm to 50 nm, for example, 7 nm, 12 nm, 18 nm, 20 nm, 26 nm, 32 nm, 38 nm, 41 nm, 50 nm, etc.

[0024] Preferably, the luminescent spectrum range of the patterned luminescent quantum dot thin film layer includes 380nm to 800nm.

[0025] The present application does not specifically limit the microscopic morphology of the luminescent quantum dots, and any luminescent quantum dots known or new in the art may be used in the present application.

[0026] Preferably, the luminescent quantum dots include any one of luminescent spherical nanoparticles, luminescent hemispherical nanoparticles, luminescent elliptical nanoparticles, luminescent triangular nanoparticles, luminescent square nanoparticles, luminescent polygonal nanoparticles, and luminescent short rod nanoparticles, or a combination of at least two of them.

[0027] Preferably, the luminescent quantum dots include any one or a combination of at least two of cadmium-based luminescent quantum dots, lead-based luminescent quantum dots, cadmium-free luminescent quantum dots, perovskite luminescent quantum dots, and carbon-based luminescent quantum dots, preferably any one or a combination of at least two of cadmium-based luminescent quantum dots, lead-based luminescent quantum dots, and cadmium-free luminescent quantum dots.

[0028] The cadmium-free quantum dots are mostly quantum dots formed by indium replacing cadmium in chromium-based quantum dots, and can also be called indium quantum dots.

[0029] Exemplarily, the cadmium-based luminescent quantum dots include any one or a combination of at least two of CdZnSeS@ZnS, CdSe / CdS, CdSe / ZnS, CdTe, ZnCdS / ZnS, CdS / ZnS, CdS@ZnS / ZnS, CdSe / ZnS, CdSe / CdS / ZnS, PbS / ZnS, ZnTe / ZnSe / ZnS, and ZnSeTe / ZnSe / ZnS;

[0030] Exemplarily, the cadmium-free luminescent quantum dots include any one of InP / ZnS, InP / ZnSeS, InP / ZnSe / ZnS, CuInS / ZnS or a combination of at least two thereof;

[0031] Exemplarily, the perovskite light-emitting quantum dots include any one of FAPbX3, MAPbX3, EAPbX3, FASnX3, MASnX3, EASnX3, FASbX3, MASbX3, EASbX3, CsPbCl3 / ZnS, CsPbBr3 / ZnS, CsPbI3 / ZnS, CsSnCl3 / ZnS, CsSnBr3 / ZnS, CsSnI3 / ZnS, CsSbCl3 / ZnS, CsSbBr3 / ZnS, and CsSbI3 / ZnS, or a combination of at least two thereof;

[0032] Exemplarily, the carbon-based luminescent quantum dots include carbon nanodots, graphene quantum dots, carbon nanotube quantum dots, C 60 Fullerene quantum dots, C 70 Any one of fullerene quantum dots, nitrogen-doped quantum dots, boron-doped quantum dots, and sulfur-doped quantum dots, or a combination of at least two of them.

[0033] Preferably, the quantum dot thin film layer includes at least two arrangement unit layers, the arrangement directions of two adjacent arrangement unit layers are the same or different, the shapes of the light-emitting functional areas of two adjacent arrangement unit layers are the same or different, and the shapes of the charge transfer areas of two adjacent arrangement unit layers are the same or different.

[0034] When the quantum dot film layer includes a plurality of arrangement unit layers, adjacent arrangement unit layers have no restrictions on the morphology selection (such as size, direction, etc.) and material selection of the light-emitting functional area and the charge transfer area, and they can be selected independently.

[0035] In a preferred embodiment, the quantum dot thin film layer includes at least two arrangement unit layers, the arrangement directions of two adjacent arrangement unit layers are crossed, the light-emitting functional areas of two adjacent arrangement unit layers have the same shape and are both linear, and the charge transfer areas of two adjacent arrangement unit layers have the same shape.

[0036] The crossing angle is preferably 0-180°, which means that the arrangement unit layers can cross at any angle.

[0037] It should be noted that, when the quantum dot film layer includes a plurality of arrangement unit layers, the light-emitting functional area described as being in a straight line, a wave shape, or a broken line shape is the shape presented when the light-emitting functional area is projected onto a substrate.

[0038] The second object of the present application is to provide a method for preparing a patterned luminescent quantum dot thin film layer as described in the first object, comprising the following steps:

[0039] (1) providing a substrate;

[0040] (2) applying a luminescent quantum dot solution on the substrate along a first predetermined direction using a brush, and simultaneously heating and preserving the substrate to promote evaporation of the solvent of the luminescent quantum dot solution, controlling the brushing speed and the solvent evaporation speed, so that the luminescent quantum dots can be aggregated in a predetermined pattern before the solvent is completely evaporated, thereby obtaining a patterned luminescent quantum dot film having an arrangement unit layer;

[0041] Optionally, after step (2), step (2') is performed n times, wherein n is a positive integer, such as 2, 3, 4, 5, 9, 12, etc.:

[0042] (2') The patterned luminescent quantum dot film having an arrangement unit layer obtained in step (2) has a luminescent quantum dot solution applied to one side of the arrangement unit layer using a brush along a second predetermined direction, and the substrate is simultaneously heated and kept warm to promote evaporation of the solvent of the luminescent quantum dot solution, and the brushing speed and the solvent evaporation speed are controlled so that the luminescent quantum dots can be aggregated in a predetermined pattern before the solvent is completely evaporated, thereby obtaining a patterned luminescent quantum dot film.

[0043] The brushing speeds of step (2) and step (2') are independently 1 to 128 times (e.g., 2 times, 5 times, 10 times, 15 times, 28 times, 33 times, 39 times, 42 times, 48 ​​times, 59 times, 63 times, 75 times, 80 times, 88 times, 94 times, 100 times, 115 times, 120 times, etc.) the evaporation rate of the solvent, preferably 5 to 75 times; the brushing speed is the brushing volume of the luminescent quantum dot solution per unit time and per unit area.

[0044] In step (2) and step (2'), the brush coating speed is controlled within the range of 1 to 128 times, especially within the range of 5 to 75 times, of the solvent evaporation speed. Before the solvent completely evaporates, the heat-enhanced capillary flow and three-phase line pinning can be utilized to cause the quantum dots to continuously and orderly aggregate, thereby forming a plurality of deposition areas parallel to the brush coating end lines, thereby forming a quantum dot high concentration area. At the same time, since the quantum dots continuously aggregate to obtain a high concentration area, the quantum dot concentration decreases between adjacent quantum dot high concentration areas, thereby forming a quantum dot low concentration area. The solvent continues to evaporate, but due to the presence of the solvent surface tension, the liquid film remains intact for a certain period of time, the quantum dots are continuously transported to the high concentration area, and the quantum dot concentration in the low concentration area continues to decrease until the liquid film ruptures, the quantum dot high concentration area forms a luminescent functional area, and the quantum dot low concentration area forms a charge transfer area.

[0045] If the brushing speed is much greater than 128 times the evaporation speed, the capillary flow generated by evaporation will be weakened, affecting the aggregation of quantum dots in the high concentration area, while the liquid film in the low concentration area is not easy to break, and the aggregation of quantum dots is disordered and non-periodic.

[0046] If the brushing speed is much lower than the evaporation speed, the solvent will evaporate completely before the quantum dots have completed aggregation, resulting in unclear patterning and the inability to obtain the different functions of the light-emitting functional area and the charge transfer area.

[0047] The preparation method described in the present application is one of the preparation methods of the patterned luminescent quantum dot thin film layer described in one of the purposes, and the method can simply and controllably obtain the patterned luminescent quantum dot thin film layer.

[0048] Preferably, the brush head of the row brush is linear, preferably straight, wavy or broken line.

[0049] Correspondingly, if the brush head of the row brush is in a straight line shape, the shape of the light-emitting functional layer is a straight line shape; if the brush head of the row brush is in a wavy line shape, the shape of the light-emitting functional layer is a wavy line shape; if the brush head of the row brush is in a broken line shape, the shape of the light-emitting functional layer is a broken line shape.

[0050] Preferably, the brushing speed is 0.2 to 10 μL / s / mm 2 , for example 0.3μL / s / mm 2, 0.5μL / s / mm 2 、0.9μL / s / mm 2 , 1.3μL / s / mm 2 、1.8μL / s / mm 2 , 2.5μL / s / mm 2 、3.8μL / s / mm 2 、4.6μL / s / mm 2 、5.5μL / s / mm 2 、6.8μL / s / mm 2 、7.4μL / s / mm 2 、8.5μL / s / mm 2 , 9.4μL / s / mm 2 etc., preferably 2 to 7 μL / s / mm 2 .

[0051] The brushing speed is the brushing volume of the luminescent quantum dot solution per unit time and per unit area, that is, it can be understood as the total brushing volume divided by the brushing time divided by the brushing area.

[0052] Preferably, the concentration of the luminescent quantum dot solution is 0.5 mg / mL to 15 mg / mL, preferably 1 mg / mL to 15 mg / mL.

[0053] Preferably, the solvent of the quantum dot solution is any one of benzene, n-octane, toluene, n-hexane, chloroform, water, ethanol, dimethyl sulfoxide, dimethylformamide, polyethylene glycol, or a combination of at least two thereof; preferably, the heating and insulation temperature is 60 to 200°C, for example, 85°C, 90°C, 95°C, 100°C, 108°C, 114°C, 119°C, etc.

[0054] Preferably, the evaporation rate is 0.05 to 0.5 μL / s / mm 2 , for example 0.06μL / s / mm 2 、0.09μL / s / mm 2 、0.1μL / s / mm 2 , 0.2μL / s / mm 2 , 0.3μL / s / mm 2 , 0.4μL / s / mm 2 etc., preferably 0.07 to 0.15 μL / s / mm 2 .

[0055] The evaporation rate is calculated by high-speed photography to obtain the volume change over time during the evaporation of a predetermined volume of solution, and then converted into the volume change per unit surface area.

[0056] Preferably, each of the steps (2') adjusts the composition of the luminescent quantum dots, the shape of the brush head, the brushing speed and the heating and insulation temperature according to the predetermined sequence and shape of the arrangement unit layers.

[0057] The order of the arrangement unit layers includes the distance and order of each arrangement unit layer from the substrate. The closer to the substrate, the first to be prepared, and the farther from the substrate, the last to be prepared. The shape of the arrangement unit layers includes the thickness, shape, width, etc. of the light-emitting functional layer and the charge transfer functional layer. The appropriate brushing speed and solvent evaporation rate can be selected according to the concentration and system of the light-emitting quantum dot solution.

[0058] The third object of the present application is to provide a light-emitting thin layer structure, comprising:

[0059] The luminescent quantum dot thin film layer as described in one of the purposes;

[0060] A non-conductive bonding layer is arranged on a side of the light-emitting quantum dot film layer away from the first surface and is filled in the light-emitting functional area and the charge transfer area;

[0061] Preferably, the surface of the non-conductive bonding layer is substantially flat.

[0062] The light-emitting thin layer structure provided by the present application is provided with a complementary non-conductive bonding layer on the basis of the light-emitting quantum dot thin film layer provided in one of the purposes, so as to provide physical isolation for different light-emitting functional layers and avoid the color interference problem as in the prior art. In addition, the present application can also provide multiple identical or different non-charge transfer functional layers in the light-emitting thin layer structure to modulate the photoelectric properties and obtain different light transmission effects.

[0063] The present application does not specifically limit the formation method of the non-conductive bonding layer, which can typically but not limitedly be any one of spin coating, blade coating, and rod coating, or a combination of at least two thereof.

[0064] Preferably, the non-conductive bonding layer is a non-conductive single substance or a non-conductive polymer.

[0065] As long as it is a non-conductive material, can form a layered structure, and is filled in the light-emitting functional area and the charge transfer area, it can be used in this application.

[0066] Preferably, the non-conductive polymer includes any one of polystyrene, polyvinyl chloride, polyethylene terephthalate, polypropylene, polyethylene, polycarbonate, polymethyl methacrylate, polymethyl acrylate, polybutylene terephthalate, polydimethylsiloxane, polyvinyl pyrrolidone, polyimide, polyethyleneimine, and polyetherimide, or a combination of at least two thereof.

[0067] The fourth object of the present application is to provide a light emitting device comprising:

[0068] Anode layer, cathode layer;

[0069] And a hole transport layer, at least one group of light-emitting thin layer structures as described in the third purpose, and an electron transport layer are arranged in sequence from the anode layer to the cathode layer.

[0070] In the same group of the light-emitting thin layer structures, the present application does not specifically limit their directions. For example, the light-emitting quantum dot thin film layer described in one of the purposes can be close to the hole transport layer side or the electron transport layer side, while the non-conductive bonding layer is the opposite.

[0071] The present application utilizes the light-emitting thin layer structure described in the third purpose as the light-emitting layer, and does not require complex circuit design, that is, there is no need to conduct electricity separately from the light-emitting functional area. At the same time, the complementary setting of the non-conductive bonding layer and the light-emitting quantum dot thin film layer is utilized to lock the light-emitting properties of the light-emitting functional layer, thereby reducing or avoiding the problem of color crosstalk.

[0072] Preferably, a hole injection layer between the hole transport layer and the anode layer;

[0073] Any functional layer that can be used in the optoelectronic field, such as an electron injection layer, can be selectively disposed between the electron transport layer and the cathode layer, and this application does not make any specific limitation.

[0074] Preferably, the light emitting device comprises one or at least two groups of light emitting thin layer structures;

[0075] Preferably, when the light-emitting device includes more than two groups of light-emitting thin layer structures, the light-emitting quantum dot thin film layers of different light-emitting thin layer structures are the same or different; and the non-conductive bonding layers of different light-emitting thin layer structures are the same or different.

[0076] The fifth object of the present application is to provide a use of the light-emitting device described in the fourth object, wherein the light-emitting device is used in the field of display technology, preferably as an optoelectronic display device.

[0077] Compared with the prior art, this application has the following beneficial effects:

[0078] (1) The present application provides a luminescent quantum dot thin film layer, which electrically connects all luminescent functional areas together through a charge transfer region. Only one set of conductive structures is required to achieve control of the entire luminescent quantum dot thin film layer;

[0079] (2) The light-emitting thin layer structure provided by the present application avoids the color interference problem that occurs in the prior art. In addition, the present application can also set multiple identical or different non-conductive functional layers in the light-emitting thin layer structure to modulate the photoelectric properties and obtain different light transmission effects.

[0080] (3) The light-emitting thin layer structure provided in the present application can reduce leakage and reduce power loss. BRIEF DESCRIPTION OF THE DRAWINGS

[0081] Figure 1 An optical microscope image of the luminescent quantum dot film layer prepared in Example 1 is given;

[0082] Figure 2 An optical microscope image of the luminescent quantum dot thin film layer prepared in Example 2 is given;

[0083] Figure 3 An optical microscope image of the luminescent thin layer prepared in luminescent thin layer preparation example 1 after a portion of the non-conductive bonding layer is torn off is given;

[0084] Figure 4 This is a schematic structural diagram of the light-emitting device described in Application Example 1;

[0085] Figure 5 This is a schematic diagram of the structure of the light-emitting device described in Application Example 11. DETAILED DESCRIPTION

[0086] The technical solution of the present invention is further explained below in conjunction with specific implementation methods. However, it should be noted that the specific implementation methods are only a specific implementation and explanation of the essence of the technical solution of the present invention, and should not be understood as a limitation on the protection scope of the present invention.

[0087] The reagents and instruments used in the examples can all be purchased from commercial products, and the detection methods are conventional methods well known in the art.

[0088] Example 1

[0089] A patterned luminescent quantum dot thin film layer is prepared by the following method:

[0090] (1) A 1 mg / mL n-octane solution was prepared as a first luminescent quantum dot solution (the quantum dots were CdZnSeS@ZnS with a diameter of 13 nm); the first luminescent quantum dot solution was continuously supplied to a brush having a straight brush surface through a liquid supply tube, and the luminescent quantum dot solution was applied to the upper surface of the substrate to be coated (the surface of the hole transport layer) along a first predetermined direction using a brush (the brushing speed was 4 mm / s, the flow rate was 100 μL / s, and the brush width was 10 mm (the same brush was used in all subsequent examples)), and the substrate was simultaneously heated to 100° C. to promote the evaporation of the solvent of the luminescent quantum dot solution (the evaporation rate at this time was 61 μL / min, and the brushing speed was 23.8 times the evaporation rate of the solvent). During the brushing process, the luminescent quantum dot solution The points are gathered into a straight line perpendicular to the first brushing direction. After annealing at 100°C, an arrangement unit (referred to as the first arrangement unit) is formed to obtain a layered structure, which includes a substrate layer to be coated, and a luminescent quantum dot film layer (referred to as the first luminescent quantum dot film layer); at this time, the luminescent quantum dot film layer has an arrangement unit layer (referred to as the first arrangement unit); the first arrangement unit layer includes a plurality of linear luminescent functional areas with a width of 2 μm and a thickness of 50 nm periodically arranged along a first predetermined direction, and charge transfer areas with a width of 25 μm and a thickness of 15 nm spaced between adjacent luminescent functional areas, and the luminescent functional areas and the charge transfer areas are continuously distributed; the thickness of the luminescent functional area is 35 nm greater than that of the charge transfer area.

[0091] Figure 1 An optical microscope image of the luminescent quantum dot thin film layer prepared in Example 1 is given. It can be seen from the image that Example 1 obtains a plurality of luminescent functional regions and a plurality of charge transfer regions that are periodically arranged along the same arrangement direction.

[0092] Example 2

[0093] A patterned luminescent quantum dot thin film layer is prepared by using the layered structure obtained in Example 1 as the substrate to be coated to prepare the second arrangement unit layer, specifically by the following method:

[0094] (1) Repeat step (1) of Example 1;

[0095] (2) preparing a 1 mg / mL n-octane solution as a second luminescent quantum dot solution (the quantum dots are CdZnSeS@ZnS, with a diameter of 9 nm); adjusting the brushing direction of the row brush to a second predetermined direction, the second predetermined direction intersecting the first predetermined direction by 120°, continuously supplying the second luminescent quantum dot solution to the row brush whose brush surface is a straight line through a liquid supply tube, using the layered structure obtained in step (1) as a secondary coating substrate, and brushing the luminescent quantum dot solution on the upper surface of the secondary coating substrate (the surface of the first luminescent quantum dots) along the second predetermined direction using a row brush (brushing speed of 4 mm / s, flow rate of 100 μL / s), and simultaneously heating the substrate to 100°C to promote the evaporation of the solvent of the luminescent quantum dot solution (the evaporation rate at this time is 61 μL / mi n, the brushing speed is 23.8 times the evaporation speed of the solvent), during the brushing process, the luminescent quantum dots are aggregated into a straight line perpendicular to the second brushing direction, and after annealing at 100°C, another arrangement unit layer (recorded as the second arrangement unit) is formed. At this time, the luminescent quantum dot film layer has two arrangement units (the first arrangement unit and the second arrangement unit) with a crossing angle of 120°, and the second arrangement unit layer includes a plurality of linear luminescent functional areas with a width of 2μm and a thickness of 50nm periodically arranged along a first predetermined direction, and charge transfer areas with a width of 25μm and a thickness of 15nm spaced between adjacent luminescent functional areas, and the luminescent functional areas and the charge transfer areas are continuously distributed; the thickness of the luminescent functional area is 35nm greater than that of the charge transfer area.

[0096] Figure 2 An optical microscope image of the luminescent quantum dot thin film layer prepared in Example 2 is given. It can be seen from the image that Example 2 obtains a plurality of luminescent functional regions and a plurality of charge transfer regions arranged at periodic intervals along a first predetermined direction and a plurality of luminescent functional regions arranged at periodic intervals along a second predetermined direction, forming a grid structure.

[0097] Example 3

[0098] A patterned luminescent quantum dot thin film layer, which differs from Example 1 in that the thickness difference between the luminescent functional area and the charge transfer area is 10 nm, the luminescent functional area has a width of 20 μm and a thickness of 40 nm, and the charge transfer area has a width of 5 μm and a thickness of 30 nm, and is specifically prepared by the following method:

[0099] (1) A n-octane solution with a concentration of 1 mg / mL is prepared as the first luminescent quantum dot solution; the first luminescent quantum dot solution is continuously supplied to a brush through a liquid supply pipe, and the luminescent quantum dot solution is brushed on the upper surface of the substrate to be coated (the surface of the hole transport layer) along a first predetermined direction using a brush with a straight brush surface (the brushing speed is 1 mm / s, and the flow rate is 100 μL / s), and the substrate is simultaneously heated to 80° C. to promote the evaporation of the solvent of the luminescent quantum dot solution (the evaporation rate at this time is 46 μL / min, and the brushing speed is 126.1 times the evaporation rate of the solvent). During the brushing process, the luminescent quantum dots are aggregated into a straight line perpendicular to the first brushing direction. After annealing at 100° C., an arrangement unit (referred to as the first arrangement unit) is formed to obtain a layered structure.

[0100] Example 4

[0101] A patterned luminescent quantum dot thin film layer, which differs from Example 1 in that the thickness difference between the luminescent functional area and the charge transfer area is 4 μm, the luminescent functional area has a width of 13 μm and a thickness of 5 μm, and the charge transfer area has a width of 10 μm and a thickness of 1 μm, and is specifically prepared by the following method:

[0102] (1) A n-octane solution with a concentration of 1 mg / mL is prepared as the first luminescent quantum dot solution; the first luminescent quantum dot solution is continuously supplied to a brush through a liquid supply pipe, and the luminescent quantum dot solution is brushed on the upper surface of the substrate to be coated (the surface of the hole transport layer) along a first predetermined direction using a brush with a straight brush surface (the brushing speed is 30 mm / s, and the flow rate is 500 μL / s), and the substrate is simultaneously heated to 200° C. to promote the evaporation of the solvent of the luminescent quantum dot solution (the evaporation rate at this time is 182 μL / min, and the brushing speed is 5.3 times the evaporation rate of the solvent). During the brushing process, the luminescent quantum dots are aggregated into a straight line perpendicular to the first brushing direction. After annealing at 100° C., an arrangement unit (referred to as the first arrangement unit) is formed to obtain a layered structure.

[0103] Example 5

[0104] A patterned luminescent quantum dot film layer, which differs from Example 1 only in that:

[0105] The luminescent quantum dot solution was brushed (the brushing speed was 50 mm / s, and the flow rate was 100 μL / s), and the substrate was simultaneously heated to 130°C to promote the evaporation of the solvent of the luminescent quantum dot solution (the evaporation rate at this time was 95 μL / min, and the brushing speed was 1.2 times the evaporation rate of the solvent). The thickness difference between the luminescent functional area and the charge transfer area was 2 nm, the width of the luminescent functional area was 0.01 μm, and the thickness was 12 nm, and the width of the charge transfer area was 35 μm, and the thickness was 10 nm.

[0106] Example 6

[0107] A patterned luminescent quantum dot film layer, which differs from Example 1 only in that:

[0108] The luminescent quantum dot solution was brushed (the brushing speed was 12 mm / s, and the flow rate was 800 μL / s), and the substrate was simultaneously heated to 90°C to promote the evaporation of the solvent of the luminescent quantum dot solution (the evaporation rate at this time was 54 μL / min, and the brushing speed was 71.6 times the evaporation rate of the solvent). The difference in thickness between the luminescent functional area and the charge transfer area was 5 nm, the luminescent functional area was 1000 μm wide and 55 μm thick, the charge transfer area was 50 μm wide and 50 nm thick,

[0109] Example 7

[0110] A patterned luminescent quantum dot thin film layer is prepared by the following method:

[0111] (1) A 1 mg / mL aqueous solution was prepared as a first luminescent quantum dot solution (the quantum dots were CdZnSeS@ZnS with a diameter of 13 nm); the first luminescent quantum dot solution was continuously supplied to a row brush with a straight brush surface through a liquid supply tube, and the luminescent quantum dot solution was brushed on the upper surface of the substrate to be coated (the surface of the hole transport layer) along a first predetermined direction using the row brush (the brushing speed was 4 mm / s and the flow rate was 100 μL / s), and the substrate was simultaneously heated to 170° C. to promote the evaporation of the solvent of the luminescent quantum dot solution (the evaporation rate at this time was 43 μL / min, and the brushing speed was 33.7 times the evaporation rate of the solvent). During the brushing process, the luminescent quantum dots were aggregated into a straight line perpendicular to the first brushing direction. shape, and after annealing at 100°C, an arrangement unit (referred to as the first arrangement unit) is formed to obtain a layered structure, wherein the layered structure includes a substrate layer to be coated, and a luminescent quantum dot film layer (referred to as the first luminescent quantum dot film layer); at this time, the luminescent quantum dot film layer has an arrangement unit layer (referred to as the first arrangement unit); the first arrangement unit layer includes a plurality of linear luminescent functional regions with a width of 5 μm and a thickness of 1000 nm periodically arranged along a first predetermined direction, and charge transfer regions with a width of 100 μm and a thickness of 500 nm spaced between adjacent luminescent functional regions, the luminescent functional regions and the charge transfer regions being continuously distributed; the thickness of the luminescent functional region is 500 nm greater than that of the charge transfer region.

[0112] Embodiment 8-9

[0113] The only difference from Example 1 is that the composition of the first luminescent quantum dot solution is adjusted to ZnCdS / ZnS to obtain different luminescent quantum dot film layers, as follows:

[0114] When the first luminescent quantum dot solution is 10 mg / mL (Example 8), the difference in thickness between the luminescent functional region and the charge transfer region is 100 nm, the width of the luminescent functional region is 3 μm, the thickness is 150 nm, and the width of the charge transfer region is 50 μm, the thickness is 50 nm;

[0115] When the concentration of the first luminescent quantum dot solution is 15 mg / mL (Example 9), the thickness difference between the luminescent functional area and the charge transfer area is 180 nm, the width of the luminescent functional area is 2 μm, the thickness is 380 nm, and the width of the charge transfer area is 30 μm, the thickness is 200 nm.

[0116] Comparative Example 1

[0117] A patterned luminescent quantum dot film layer, the difference from Example 1 is that the brushing speed of the luminescent quantum dot solution is 20 mm / s, the flow rate is 30 μL / s, the substrate is heated to a temperature of 200°C, the evaporation rate at this time is 182 μL / min, and the brushing speed is 0.5 times the evaporation rate of the solvent. The results show that the quantum dots are scattered and there is no pattern.

[0118] Comparative Example 2

[0119] A patterned luminescent quantum dot film layer, the difference from Example 1 is that the brushing speed of the luminescent quantum dot solution is 4 mm / s, the flow rate is 500 μL / s, the substrate is heated to a temperature of 80°C, the evaporation rate at this time is 46 μL / min, and the brushing speed is 150 times the evaporation rate of the solvent. The results show that the pattern distribution is irregular and there is no periodic arrangement.

[0120] Examples 1 to 7 of preparing luminescent thin layers and comparative examples 1 to 2 of preparing luminescent thin layers

[0121] A luminescent thin layer structure, wherein a polyvinyl chloride solution (the solution concentration is 0.5 mg / mL, and the solvent is acetone) is spin-coated on the surface of the first luminescent quantum dot film layer of Examples 1 to 7 until the surface of the luminescent quantum dot film is filled and a polyvinyl chloride layer with a thickness of 70 nm is formed as a non-conductive bonding layer.

[0122] Among them, the luminescent thin film layer preparation example 1 uses the luminescent quantum dot film layer of Example 1; the luminescent thin film layer preparation example 2 uses the luminescent quantum dot film layer of Example 2; the luminescent thin film layer preparation example 3 uses the luminescent quantum dot film layer of Example 3; the luminescent thin film layer preparation example 4 uses the luminescent quantum dot film layer of Example 4; the luminescent thin film layer preparation example 5 uses the luminescent quantum dot film layer of Example 5; the luminescent thin film layer preparation example 6 uses the luminescent quantum dot film layer of Example 6; the luminescent thin film layer preparation example 7 uses the luminescent quantum dot film layer of Example 7; the luminescent thin film layer preparation example 8 uses the luminescent quantum dot film layer of Example 8; the luminescent thin film layer preparation example 9 uses the luminescent quantum dot film layer of Example 9; the luminescent thin film layer preparation comparison example 1 uses the luminescent quantum dot film layer of comparison example 1; the luminescent thin film layer preparation comparison example 2 uses the luminescent quantum dot film layer of comparison example 2.

[0123] In order to clearly see the non-conductive bonding layer, tear off part of the non-conductive bonding layer with tweezers and observe it. Figure 3 An optical microscope image of the light-emitting thin layer prepared in Example 1 of preparing the light-emitting thin layer after a part of the non-conductive bonding layer is torn off is given. From the image, it can be seen that a plurality of light-emitting functional areas and a plurality of charge transfer areas are periodically arranged along a first predetermined direction and a non-conductive bonding layer covering the surface.

[0124] Example 10 of preparing luminescent thin layer

[0125] A luminescent thin layer structure, which is different from the luminescent thin film layer preparation example 1 in that the polyvinyl chloride solution is replaced by a polystyrene solution (the solution concentration is 0.5 mg / mL, and the solvent is ethanol).

[0126] Preparation Example 11 of Luminescent Thin Layer

[0127] A luminous thin layer structure is prepared by the following method:

[0128] (1) Spin coating a polyvinyl chloride spherical particle solution (the solution concentration is 0.5 mg / mL, the solvent is acetone) on the surface of the first luminescent quantum dot film layer of Example 1, and the polyvinyl chloride fills the surface of the luminescent quantum dot film and forms a polyvinyl chloride layer with a thickness of 70 nm as the first non-conductive bonding layer to obtain a layered structure;

[0129] (2) preparing a 1 mg / mL n-octyl succinate solution as the second luminescent quantum dot solution; adjusting the brushing direction of the row brush to a second predetermined direction, the second predetermined direction being perpendicular to the first predetermined direction, and continuously supplying the second luminescent quantum dot solution to the row brush whose brush surface is a straight line through a liquid supply tube, using the layered structure obtained in step (1) as a coating substrate, and brushing the luminescent quantum dot solution on the upper surface of the coating substrate (the surface of the first non-conductive bonding layer) along the second predetermined direction using a row brush (the brushing speed is 4 mm / s, the flow rate is 100 μL / s), and simultaneously applying a brush to the substrate. Heat to 100° C. and keep warm to promote the evaporation of the solvent of the luminescent quantum dot solution (the evaporation rate at this time is 61 μL / min, and the brushing speed is 23.8 times the evaporation rate of the solvent). During the brushing process, the luminescent quantum dots are aggregated into a straight line perpendicular to the second brushing direction. After annealing at 100° C., an arrangement unit layer is formed to obtain a layered structure, which includes a coated substrate, a first arrangement unit, a first non-conductive bonding layer, and a second arrangement unit sequentially arranged on the coated substrate; the second arrangement unit is recorded as a second luminescent quantum dot film layer;

[0130] At this time, the intersection angle between the arrangement unit of the first luminescent quantum dot film layer and the arrangement unit of the second luminescent quantum dot film layer is 0°, and the arrangement unit layer of the second luminescent quantum dot includes a plurality of linear luminescent functional regions with a width of 2μm and a thickness of 50nm periodically arranged along a second predetermined direction, and charge transfer regions with a width of 25μm and a thickness of 15nm spaced between adjacent luminescent functional regions. The luminescent functional regions and the charge transfer regions are continuously distributed; the thickness of the luminescent functional region is 35nm greater than that of the charge transfer region.

[0131] Application Example 1

[0132] A light emitting device, such as Figure 4 ( Figure 4 As shown in the structural schematic diagram of the light emitting device described in Application Example 1, it includes:

[0133] Anode layer 100;

[0134] cathode layer 700;

[0135] and a hole transport layer 200, a hole injection layer 300, a light emitting thin layer and an electron transport layer 600 arranged in sequence from the anode layer 100 to the cathode layer 700;

[0136] The light-emitting thin layer structure is formed by the method of light-emitting thin layer preparation example 1, including a light-emitting quantum dot thin film layer 400 close to the hole injection layer 300 and a non-conductive bonding layer 500 close to the electron transport layer; the light-emitting quantum dot thin film layer 400 includes a plurality of linear light-emitting functional areas periodically arranged and periodically arranged along a first predetermined direction and charge transfer areas filled between adjacent light-emitting functional areas.

[0137] Application Examples 2 to 10

[0138] The only difference from Application Example 1 is that Application Example 1 is replaced by the luminescent thin layer prepared by the luminescent thin layer preparation examples 2 to 9; specifically:

[0139] Application Example 2 uses the luminescent thin layer prepared in Luminescent Thin Layer Preparation Example 2;

[0140] Application Example 3 uses the luminescent thin layer prepared in Luminescent Thin Layer Preparation Example 3;

[0141] Application Example 4 uses the luminescent thin layer prepared in Luminescent Thin Layer Preparation Example 4;

[0142] Application Example 5 uses the luminescent thin layer prepared in Luminescent Thin Layer Preparation Example 5;

[0143] Application Example 6 uses the luminescent thin layer prepared in Luminescent Thin Layer Preparation Example 6;

[0144] Application Example 7 uses the luminescent thin layer prepared in Luminescent Thin Layer Preparation Example 7;

[0145] Application Example 8 uses the luminescent thin layer prepared in Luminescent Thin Layer Preparation Example 8;

[0146] Application Example 9 uses the luminescent thin layer prepared in Luminescent Thin Layer Preparation Example 9;

[0147] Application Example 10 uses the luminescent thin layer prepared in Luminescent Thin Layer Preparation Example 10;

[0148] Comparative Application Example 1 uses a luminescent thin layer to prepare the luminescent thin layer prepared in Comparative Example 1;

[0149] Comparative Application Example 2 uses the luminescent thin layer prepared in Comparative Example 2 to prepare the luminescent thin layer.

[0150] Application Example 11

[0151] The only difference from Application Example 1 is that the light-emitting thin layer prepared in Application Example 11 is replaced with the light-emitting thin layer prepared in Application Example 1. Specifically, the light-emitting device, such as Figure 5 ( Figure 5 As shown in the structural schematic diagram of the light-emitting device described in Application Example 11, it includes:

[0152] Anode layer 100;

[0153] cathode layer 700;

[0154] and a hole transport layer 200, a hole injection layer 300, a light emitting thin layer and an electron transport layer 600 arranged in sequence from the anode layer 100 to the cathode layer 700;

[0155] The light-emitting thin layer structure is formed by the method of light-emitting thin layer preparation example 10, including a first light-emitting quantum dot thin film layer 410 close to the hole injection layer 300, a first non-conductive bonding layer 510 complementary to the first light-emitting quantum dot thin film layer 410, a second light-emitting quantum dot thin film layer 420 formed on the first non-conductive bonding layer 510, and a second non-conductive bonding layer 520 complementary to the second light-emitting quantum dot thin film layer 420;

[0156] The first light-emitting quantum dot film layer 410 and the second light-emitting quantum dot film layer 420 independently include a plurality of linear light-emitting functional areas periodically arranged and periodically spaced along a first predetermined direction and charge transfer areas respectively filled between adjacent light-emitting functional areas.

[0157] The light-emitting devices provided in Application Examples 1 to 11 and Comparative Application Examples 1 to 2 are prepared by the following method:

[0158] (1) providing an ITO glass substrate, cleaning it, blowing it dry with an inert gas, and subjecting the surface to an oxygen plasma cleaning treatment for 1 to 2 minutes to remove tiny impurities on the surface;

[0159] (2) forming a hole injection layer and a hole transport layer on the surface of the ITO glass substrate (first electrode layer) in sequence, specifically: spin coating the hole injection material PEDOT:PSS poly(3,4-ethylenedioxythiophene:polystyrene sulfonic acid) solution on the surface of the ITO glass substrate at a speed of 3000 rpm and a spin coating time of 45 s to obtain a hole injection layer; then placing the glass substrate covered with the hole injection layer in a glove box filled with inert gas, wherein the oxygen content in the box is ≤1ppm and the water content is ≤1ppm; then spin coating a hole transport layer material PVK (polyvinyl carbazole) solution, setting the speed to 3000 rpm and the spin coating time to 45 s, and baking at 130°C for 20 min to obtain a hole transport layer; obtaining a structure of ITO glass substrate / hole injection layer / hole transport layer;

[0160] (3) Using the structure surface of the ITO glass substrate / hole injection layer / hole transport layer as the substrate to be coated, a luminescent thin layer is formed according to the method of luminescent thin layer preparation examples 1 to 10;

[0161] (4) coating ZnO on the surface of the light-emitting thin layer to form an electron transport layer;

[0162] (5) Coating Ag on the surface of the electron transport layer to form a second electrode layer.

[0163] Figure 4 A schematic structural diagram of the light-emitting device prepared in Application Example 1 is given.

[0164] Performance Testing:

[0165] (1) Color interference: Observe the optical microscope image. Under voltage drive, the adjacent light-emitting functional area emits light, while the charge transfer area does not emit light, which is defined as no interference; the adjacent light-emitting functional area emits light, while the charge transfer area emits weak light, which is defined as slight interference; the adjacent light-emitting functional area and the charge transfer area both emit light, which is defined as severe interference. The results are shown in Table 1.

[0166] (3) Leakage current: The measurement method is to use a fluorescent quantum test system to measure the device performance, measure the photoelectric curve under a voltage of 0 to 10 V, and record the brightness of 1000 cd / cm 2 The current at , the results are shown in Table 1.

[0167] Table 1

[0168] Examples Color interference <![CDATA[Current density (mA / cm 2 )]]> Application Example 1 No interference 123 Application Example 2 No interference 106 Application Example 3 Slightly disturbing 532 Application Example 4 No interference 476 Application Example 5 Slightly disturbing 556 Application Example 6 No interference 417 Application Example 7 No interference 230 Application Example 8 No interference 427 Application Example 9 No interference 556 Application Example 10 No interference 306 Application Example 11 No interference 236 Comparative application example 1 Serious interference 2735 Comparative Application Example 2 Serious interference 1485

[0169] It can be seen from Table 1 that the luminescent quantum dot thin film layer structure provided in the present application can effectively reduce or eliminate color interference, reduce leakage, and reduce energy consumption.

[0170] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A patterned luminescent quantum dot thin film layer, characterized in that: The quantum dot film layer includes at least one arrangement unit layer, and the arrangement unit layer includes at least one light-emitting functional area and at least one charge transfer area periodically arranged along the same arrangement direction; The thickness of the light-emitting functional area is greater than that of the charge transfer area; The light-emitting functional area and the charge transfer area are continuously distributed and have the same material composition, and are all light-emitting quantum dots; The light emitting functional area and the charge transfer area have a substantially flush surface, which is defined as a first surface.

2. The luminescent quantum dot thin film layer according to claim 1, characterized in that: The light-emitting functional area is linear, and the linear extension direction of the light-emitting functional area is perpendicular to the arrangement direction; Preferably, the light-emitting functional area is in a straight line, a wavy line or a broken line shape; Preferably, in the same arrangement unit layer, the light-emitting functional areas have the same shape; Preferably, in the same arrangement unit layer, the charge transfer regions have the same shape.

3. The luminescent quantum dot thin film layer according to claim 1 or 2, characterized in that: The thickness difference between the light-emitting functional area and the charge transfer area is 5nm to 10μm; Preferably, the width of the light-emitting functional area is 1 μm to 50 μm; Preferably, the thickness of the light-emitting functional area is 5 nm to 10 μm; Preferably, the width of the charge transfer region is 1 μm to 150 μm; Preferably, the thickness of the charge transfer region is 5 nm to 50 nm.

4. The luminescent quantum dot thin film layer according to any one of claims 1 to 3, characterized in that: The luminescence spectrum range of the patterned luminescent quantum dot thin film layer includes 380nm to 800nm; Preferably, the luminescent quantum dots include any one of luminescent spherical nanoparticles, luminescent hemispherical nanoparticles, luminescent elliptical nanoparticles, luminescent triangular nanoparticles, luminescent square nanoparticles, luminescent polygonal nanoparticles, and luminescent short rod nanoparticles, or a combination of at least two thereof; Preferably, the luminescent quantum dots include any one or a combination of at least two of cadmium-based luminescent quantum dots, lead-based luminescent quantum dots, cadmium-free luminescent quantum dots, perovskite luminescent quantum dots, and carbon-based luminescent quantum dots, preferably any one or a combination of at least two of cadmium-based luminescent quantum dots, lead-based luminescent quantum dots, and cadmium-free luminescent quantum dots.

5. The luminescent quantum dot thin film layer according to any one of claims 1 to 4, characterized in that: The quantum dot thin film layer comprises at least two arrangement unit layers, the arrangement directions of two adjacent arrangement unit layers are the same or different, the shapes of the light emitting functional areas of two adjacent arrangement unit layers are the same or different, and the shapes of the charge transfer areas of two adjacent arrangement unit layers are the same or different; Preferably, the quantum dot film layer comprises at least two arrangement unit layers, the arrangement directions of two adjacent arrangement unit layers intersect, the light emitting functional areas of two adjacent arrangement unit layers have the same shape and are both linear, and the charge transfer areas of two adjacent arrangement unit layers have the same shape; Preferably, the intersection angle is 0-180°.

6. A method for preparing a patterned luminescent quantum dot thin film layer as claimed in any one of claims 1 to 5, characterized in that: The preparation method comprises the following steps: (1) providing a substrate; (2) applying a luminescent quantum dot solution on the substrate along a first predetermined direction using a brush, and simultaneously heating and preserving the substrate to promote evaporation of the solvent of the luminescent quantum dot solution, controlling the brushing speed and the solvent evaporation speed, so that the luminescent quantum dots can be aggregated in a predetermined pattern before the solvent is completely evaporated, thereby obtaining a patterned luminescent quantum dot film having an arrangement unit layer; Optionally, after step (2), step (2') is performed n times, where n is a positive integer: (2') The patterned luminescent quantum dot film having an arrangement unit layer obtained in step (2) is coated with a luminescent quantum dot solution on one side of the arrangement unit layer using a brush along a second predetermined direction, and the substrate is simultaneously heated and kept warm to promote evaporation of the solvent of the luminescent quantum dot solution, and the coating speed and the solvent evaporation speed are controlled so that the luminescent quantum dots can be aggregated in a predetermined pattern before the solvent is completely evaporated, thereby obtaining a patterned luminescent quantum dot film; The brushing speeds of step (2) and step (2') are independently 1 to 128 times, preferably 5 to 75 times, the evaporation speed of the solvent; the brushing speed is the brushing volume of the luminescent quantum dot solution per unit time and per unit area.

7. The preparation method according to claim 6, characterized in that: The brush head of the row brush is in a linear shape, preferably in a straight line, a wavy line or a broken line shape; Preferably, the brushing speed is 0.2 to 10 μL / s / mm 2 ; Preferably, the concentration of the luminescent quantum dot solution is 0.5 mg / mL to 15 mg / mL, preferably 1 mg / mL to 15 mg / mL; Preferably, the solvent of the quantum dot solution is any one of benzene, n-octane, toluene, n-hexane, chloroform, water, ethanol, dimethyl sulfoxide, dimethylformamide, polyethylene glycol, or a combination of at least two thereof; Preferably, the heating and heat preservation temperature is 60-200°C; Preferably, the evaporation rate is 0.05 to 0.5 μL / s / mm 2 ; Preferably, each of the steps (2') adjusts the composition of the luminescent quantum dots, the shape of the brush head, the brushing speed and the heating and insulation temperature according to the predetermined sequence and shape of the arrangement unit layers.

8. A light-emitting thin layer structure, characterized in that: The light-emitting thin layer structure comprises: The luminescent quantum dot thin film layer according to any one of claims 1 to 5; A non-conductive bonding layer is arranged on a side of the light-emitting quantum dot film layer away from the first surface and is filled in the light-emitting functional area and the charge transfer area; Preferably, the surface of the non-conductive bonding layer is substantially flush; Preferably, the non-conductive bonding layer is a non-conductive single substance or a non-conductive polymer, preferably a non-conductive polymer; Preferably, the non-conductive polymer includes any one of polystyrene, polyvinyl chloride, polyethylene terephthalate, polypropylene, polyethylene, polycarbonate, polymethyl methacrylate, polymethyl acrylate, polybutylene terephthalate, polydimethylsiloxane, polyvinyl pyrrolidone, polyimide, polyethyleneimine, and polyetherimide, or a combination of at least two thereof.

9. A light emitting device, characterized in that: The light emitting device comprises: Anode layer, cathode layer; and a hole transport layer, at least one group of the light-emitting thin layer structure as claimed in claim 8, and an electron transport layer arranged in sequence from the anode layer to the cathode layer; Preferably, a hole injection layer between the hole transport layer and the anode layer; Preferably, the light emitting device comprises one or at least two groups of light emitting thin layer structures; Preferably, when the light-emitting device includes more than two groups of light-emitting thin layer structures, the light-emitting quantum dot thin film layers of different light-emitting thin layer structures are the same or different; and the non-conductive bonding layers of different light-emitting thin layer structures are the same or different.

10. Use of the light emitting device according to claim 9, characterized in that: The light emitting device is used in the field of display technology, preferably as an optoelectronic display device.

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