Method of depositing layer onto substrate and semiconductor processing apparatus

Abstract

The invention relates to a method for depositing a layer onto a substrate and a semiconductor processing apparatus. A semiconductor processing apparatus includes a processing chamber including a housing defining an interior volume of the processing chamber and a plurality of processing stations within the interior volume for holding substrates. The semiconductor processing equipment further comprises a plurality of active substance generators. The system includes at least a first active material generator configured to provide a first active material to at least one or more first processing stations of the plurality of processing stations and a second active material generator configured to provide a second active material to at least one or more second processing stations of the plurality of processing stations.

Description

Technical Field

[0001] The present disclosure relates generally to the field of semiconductor processing methods and systems, and to the field of integrated circuit fabrication. Background Art

[0002] The reduction in size of semiconductor devices such as logic devices and memory devices has led to significant increases in the speed and density of integrated circuits. However, conventional device scaling techniques face significant challenges for future technology nodes. For example, one challenge is finding suitable methods to fill gaps, such as grooves, trenches, vias, etc., with materials that do not form gaps or voids.

[0003] Any discussion set forth in this section, including discussion of problems and solutions, has been included in the present disclosure merely to provide context for the present disclosure. Such discussion should not be construed as an admission that any or all information was known at the time the present invention was made, or constitutes prior art. Summary of the invention

[0004] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the example embodiments disclosed below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0005] According to a first aspect, a method for depositing a layer onto a substrate is provided.

[0006] In an embodiment of the first aspect, a method for depositing a layer onto a substrate includes providing a process chamber comprising a housing defining an interior volume of the process chamber and a plurality of process stations arranged within the interior volume.

[0007] In an embodiment of the first aspect, a method for depositing a layer onto a substrate comprises forming a preliminary layer onto the substrate at one or more first processing stations among a plurality of processing stations, the process of forming the preliminary layer comprising exposing the substrate to a first active substance formed using a first active substance generator.

[0008] In an embodiment of the first aspect, a method for depositing a layer onto a substrate includes converting a preliminary layer at one or more second processing stations in a plurality of processing stations that are separate from one or more first processing stations, the process of converting the preliminary layer including exposing the preliminary layer to a second active substance formed using a second active substance generator that is different from the first active substance generator.

[0009] According to a second aspect, a semiconductor processing apparatus is provided.

[0010] In an embodiment of the second aspect, a semiconductor processing apparatus includes a process chamber including a housing defining an interior volume of the process chamber and a plurality of process stations within the interior volume for holding a substrate.

[0011] In an embodiment of the second aspect, a semiconductor processing device includes a plurality of active substance generators, which include at least a first active substance generator configured to provide a first active substance to at least one or more first processing stations among a plurality of processing stations, and a second active substance generator different from the first active substance generator, the second active substance generator being configured to provide a second active substance to at least one or more second processing stations among the plurality of processing stations separated from the one or more first processing stations.

[0012] In an embodiment of the second aspect, a semiconductor processing apparatus comprises a control unit configured to control at least a process chamber and a plurality of active species generators to deposit a layer onto a substrate by a method according to the first aspect.

[0013] These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying figures.The present invention is not limited to any particular embodiment disclosed. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] A more complete understanding of embodiments of the present disclosure may be obtained by referring to the detailed description and claims when considered in conjunction with the following illustrative drawings:

[0015] Figure 1 schematically depicts a method for depositing a layer onto a substrate, and

[0016] Figure 2 Semiconductor processing equipment is shown.

[0017] The illustrations presented herein are not meant to be actual views of any particular material, structure or device, but are merely idealized representations for describing embodiments of the present disclosure. It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the sizes of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. In addition, the connecting lines shown in the various figures are intended to represent examples of functional relationships and / or physical connections between the various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments. DETAILED DESCRIPTION

[0018] In this specification, a "process" may refer to a series of one or more steps leading to an end result. In addition, a "step" may refer to an action taken to achieve one or more predefined end results. In general, a process may be a single-step or multi-step process. In addition, a process may be divided into multiple sub-processes, wherein each of the multiple sub-processes may or may not share common steps.

[0019] In the present disclosure, a "layer" or "film" may refer to a structure having a certain thickness formed on a surface. A layer may be continuous or discontinuous. A film or layer may be composed of a discrete single film or layer or a plurality of films or layers having certain properties, and the boundaries between adjacent films or layers may or may not be clear, and may or may not be established based on physical, chemical and / or any other properties, formation process or sequence and / or the function or purpose of adjacent films or layers.

[0020] In the present disclosure, "substrate" may refer to any one or more underlying materials that may be used to form or on which a device, circuit, or film may be formed. The substrate may include a bulk material, such as silicon (e.g., single crystal silicon), other Group IV materials, such as germanium, or a compound semiconductor material, such as GaAs, and may include one or more layers overlying or underlying the bulk material. In addition, the substrate may include various structures, such as grooves, through holes, lines, etc., formed in or on at least a portion of the substrate layer.

[0021] In this specification, a "chemical vapor deposition process" or "CVD process" may refer to a coating process in which one or more gaseous compounds decompose to deposit a layer on a substrate. In addition, a "cyclic chemical vapor deposition process" or "cyclic CVD process" may refer to a CVD process that includes sequentially and / or cyclically providing precursors, and / or reactants, and / or reactive species to deposit the layer onto the substrate.

[0022] Throughout the specification, an "atomic layer deposition process" or "ALD process" may refer to a cyclic CVD process including purging a process station between providing precursors and / or reactants and / or reactive species. Typically, purging may be accomplished by flushing the process station with an inert gas. Additionally or alternatively, an "atomic layer deposition process" or "ALD process" may refer to a cyclic CVD process adapted or configured to deposit a conformal layer on a substrate, for example, a layer having a step coverage (SC) of at least 95% or 99% or about 100% for features having an aspect ratio (AR) of 3:1 or 5:1 or 10:1. Furthermore, a "timed atomic layer process" or "timed ALD process" may refer to an ALD process, wherein the process of purging a process station includes a timed purge step, during which the providing of precursors and / or reactants and / or reactive species is stopped. Additionally or alternatively, a "timed atomic layer process" or "timed ALD process" may refer to an ALD process, wherein the substrate on which the layer is deposited remains stationary during deposition.

[0023] Throughout the specification, a "processing station" may refer to a position suitable for or configured to hold a substrate so that a process can be performed on the substrate. Additionally or alternatively, a processing station may refer to a portion of a processing chamber. Here, a "processing chamber" may refer to a chamber suitable for or configured to be able to perform a process on a substrate. Additionally or alternatively, a processing chamber may refer to a vacuum chamber in which a process can be performed. In some embodiments, when one or more substrates are processed in one or more separate processing stations, the separate processing stations of the processing chamber may be arranged to be gas-isolated from each other or configured to be gas-isolated from each other. In such embodiments, the individual processing stations of the processing chamber may be arranged in a gas-isolated manner by physical barriers and / or gas bearings and / or gas curtains. In some embodiments, after or while the substrate is placed in the processing station, the processing station may be arranged to be gas-isolated. In some embodiments, after the substrate has been processed in the processing station, the processing station may be out of gas isolation so that the substrate can be removed from the processing station. Typically, a plurality of substrates may be placed in a shared intermediate space of a processing chamber for moving individual substrates of the plurality of substrates from one processing station to another.

[0024] In this specification, "active species" may refer to unstable molecular entities formed in a plasma. Additionally or alternatively, active species may refer to ions and / or (free) free radicals. Here, "ions" may refer to atoms or molecular particles having a net charge, and / or "free radicals" may refer to atoms or molecular particles having unpaired electrons.

[0025] In addition, an "active material generator" may refer to a device suitable for or configured to form an active material. Additionally or alternatively, an active material generator may refer to a device suitable for or configured to form and maintain a plasma, such as a non-thermal plasma or a "cold plasma". Additionally or alternatively, an active material generator may refer to a plasma source, such as a non-thermal plasma source, such as a capacitively coupled plasma (CCP) source, an inductively coupled plasma (ICP) source, or an electron cyclotron resonance (ECR) plasma source. In some embodiments, the active material generator may be configured to form a plasma at least in part using radio waves (i.e., electromagnetic radiation having a frequency less than or equal to 300 megahertz (MHz)) and / or microwaves (i.e., electromagnetic radiation having a frequency in the range of 300 MHz to 300 gigahertz (GHz)). Typically, an active material generator may be implemented as a direct plasma generator, an indirect plasma generator, or a remote plasma generator.

[0026] Here, "plasma" may refer to an at least partially ionized gas that contains various types of particles, such as electrons, atoms, ions, molecules and / or free radicals. Generally, the plasma may be electrically neutral as a whole.

[0027] In this specification, a "direct plasma generator" may refer to a reactive species generator configured to form and maintain a plasma in a process chamber between a perforated panel of a showerhead injector of the process chamber and a substrate support of the process chamber, and an "indirect plasma generator" may refer to a reactive species generator configured to form and maintain a plasma in a process chamber such that a perforated panel of a showerhead injector of the process chamber and / or a screen adapted or configured to block ions are arranged between the plasma and the substrate support of the process chamber. In addition, a "remote plasma generator" may refer to a reactive species generator configured to form and maintain a plasma outside a process chamber and introduce reactive species (e.g., free radicals) formed in the plasma into the process chamber, such as through an reactive species conduit or channel.

[0028] In the present disclosure, a "plasma enhanced" deposition process may refer to a CVD process in which one or more gaseous compounds that decompose to deposit a layer are exposed to reactive species during the deposition process. Additionally, a "free radical enhanced" deposition process may refer to a CVD process in which one or more gaseous compounds that decompose to deposit a layer are exposed to free radicals during the deposition process without being substantially exposed to ions.

[0029] Throughout the disclosure, an active species generator that is "different from" another active species generator may mean that the other active species generator may be classified into a group of active species generator categories, and the active species may be classified into at least one active species generator category different from the group of active species generators. In general, active species generators configured to provide active species to a processing station may be classified based at least on a physical phenomenon used by the active species generator to form a plasma and / or active species and based on a location of a plasma formed by the active species generator during processing of a substrate in a processing chamber.

[0030] In the present disclosure, "converting" a layer may refer to exposing the layer to an active substance. Additionally or alternatively, a conversion layer may refer to changing the microstructure and / or nanostructure and / or crystal structure of at least a portion of the layer, such as crystallization, amorphization and / or polycrystalline conversion. Additionally or alternatively, a conversion layer may refer to changing the chemical composition of at least a portion of the layer, such as introducing or removing hydrogen, halogens, oxygen, nitrogen and / or carbon. Additionally or alternatively, a conversion layer may refer to modifying at least a portion of the layer without forming another layer on the layer. Additionally or alternatively, a conversion layer may refer to treating the layer such that one or more experimentally determinable parameters of at least a portion of the layer, such as density; and / or etch rate using a particular etching method; and / or one or more optical properties, such as absorption and / or emission spectra in the ultraviolet, visible and / or near infrared portion of the electromagnetic spectrum, i.e., from about 100 nanometers (nm) to 10 micrometers (μm); and / or X-ray scattering properties, such as X-ray scattering intensity and / or angle; and / or elemental composition; and / or chemical state; and / or electronic density of states may change. In some embodiments, such changes may be experimentally quantifiable, and / or statistically relevant, and / or greater than or equal to at least 0.1%, or at least 0.5%, or at least 1%, or at least 2%, or at least 5%, or at least 10%, or at least 20%.

[0031] Throughout the specification, "control unit" may refer to any combination of separate controller devices and processing electronic devices that can be integrated with other devices or connected to other devices. In some embodiments, the control unit may include a centralized controller that controls the operation of multiple devices or components. In some embodiments, the control unit may be understood as including multiple distributed controllers that control the operation of one or more devices or components. Typically, the control sequence may be hardwired or programmed into the control unit. The storage device of the control unit may include a non-transitory computer-readable medium, such as a physical computer memory, including a hard drive, a solid-state memory, a random access memory (RAM), a read-only memory (ROM), an optical disk, a volatile or non-volatile memory, a combination thereof, and the like. The non-transitory computer-readable medium may provide instructions to one or more processors. It should be understood that instructions may be used for any action described herein so that the processing of the instructions by one or more processors causes the semiconductor processing device to perform those actions.

[0032] The descriptions of exemplary embodiments of methods, structures, devices, and / or systems provided below are merely informative and for illustrative purposes only; the following descriptions are not intended to limit the scope of the present disclosure or the claims. Furthermore, the recitation of multiple embodiments having described features is not intended to exclude other embodiments having additional features or other embodiments incorporating different combinations of the described features. For example, various embodiments are set forth as example embodiments and may be recited in dependent claims. Unless otherwise stated, the exemplary embodiments or components thereof may be combined or may be applied separately from one another. Furthermore, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the system may not be described in detail.

[0033] Figure 1 A method 100 for depositing a layer onto a substrate according to an embodiment is schematically depicted. Figure 1 Optional features of method 100 are depicted using dashed lines. In other embodiments, the method for depositing a layer onto a substrate may be similar to Figure 1 The method 100 of the embodiments may be the same, similar, or different.

[0034] Figure 1The method 100 of an embodiment of the present invention includes providing a processing chamber 101, the processing chamber 101 including a shell defining an interior volume of the processing chamber and a plurality of processing stations arranged within the interior volume; forming a preliminary layer 104 onto a substrate at one or more first processing stations of the plurality of processing stations, the process of forming the preliminary layer 104 including exposing the substrate to a first active substance 107 formed using a first active substance generator; and converting the preliminary layer 110 at one or more second processing stations of the plurality of processing stations separate from the one or more first processing stations, the process of converting the preliminary layer 110 including exposing the preliminary layer to a second active substance 111 formed using a second active substance generator different from the first active substance generator. In other embodiments, the method for depositing a layer onto a substrate may or may not include one or more such features. In some embodiments, the method for depositing a layer onto a substrate including such features may facilitate the joint optimization of several processes of the method, involving the utilization of active substances.

[0035] Figure 1 The method 100 of the embodiment of the present invention may be implemented as a method for at least partially filling a gap formed in a substrate. In other embodiments, the method for depositing a layer onto a substrate may be implemented in any suitable manner, such as as a method for at least partially filling a gap formed in a substrate, or as a method for depositing a layer onto a polished surface of a substrate. In some embodiments, the method for depositing a layer onto a substrate may be implemented as a method for depositing a layer onto a complex three-dimensional surface of a substrate.

[0036] exist Figure 1 In some embodiments, the process of forming the preliminary layer 104 may be implemented as a time ALD process. In other embodiments, the process of forming the preliminary layer may be implemented as any suitable type of process. For example, in some embodiments, the process of forming the preliminary layer may be implemented as a chemical vapor deposition (CVD) process, such as a cyclic CVD process, such as an atomic layer deposition (ALD) process, such as a time ALD process.

[0037] form Figure 1 The process of forming the preliminary layer 104 of the embodiment may be implemented as a plasma enhanced atomic layer deposition (PEALD) process or a radical enhanced atomic layer deposition (REALD) process. In other embodiments, the process of forming the preliminary layer may or may not be implemented as a plasma enhanced deposition process, such as a plasma enhanced CVD (PECVD) process or a plasma enhanced ALD (PEALD) process; or a radical enhanced deposition process, such as a radical enhanced CVD (RECVD) process or a radical enhanced ALD (REALD) process.

[0038] Figure 1The layers of embodiments may consist essentially of silicon (Si) and / or oxygen (O) and / or nitrogen (N) and / or carbon (C). In other embodiments, the layers may include, consist essentially of, or consist of any suitable element or material, and the scope of the present disclosure is not necessarily limited to any particular material or combination of materials. In some embodiments, the layers may include, consist essentially of, or consist of silicon (Si) and / or oxygen (O) and / or nitrogen (N) and / or carbon (C). For example, in some such embodiments, the layers may include, consist essentially of, or consist of stoichiometric and / or non-stoichiometric silicon oxide, silicon nitride, and / or silicon carbide; silicon oxynitride; silicon oxycarbide; silicon carbonitride; and / or carbon oxynitride silicon.

[0039] exist Figure 1 In an embodiment, the first active material may include, for example, an active material formed of helium (He) and an active material formed of nitrogen (N2) and / or oxygen (O2). In other embodiments, any suitable active material may be used to form the preparatory layer, and the scope of the present disclosure is not necessarily limited to any particular first active material. For example, in some embodiments, the first active material may include rare gas-containing ions and / or free radicals; and / or halogen-containing ions and / or free radicals, such as fluorine-containing, chlorine-containing and / or bromide-containing ions and / or free radicals; and / or oxygen-containing ions and / or free radicals; and / or nitrogen-containing ions and / or free radicals; and / or hydrogen-containing ions and / or free radicals.

[0040] Figure 1 The second active material of the embodiment may include, for example, an active material formed of helium (He), nitrogen (N2), hydrogen (H2) and / or oxygen (O2). In other embodiments, any suitable active material may be used for the conversion preparation layer, and the scope of the present disclosure is not necessarily limited to any particular second active material. For example, in some embodiments, the second active material may include rare gas-containing ions and / or free radicals; and / or halogen-containing ions and / or free radicals, such as fluorine-containing, chlorine-containing and / or bromide-containing ions and / or free radicals; and / or oxygen-containing ions and / or free radicals; and / or nitrogen-containing ions and / or free radicals; and / or hydrogen-containing ions and / or free radicals.

[0041] exist Figure 1 In an embodiment, during the exposure of the preliminary layer to the second active substance, the preliminary layer may be exposed to the second active substance for a treatment duration of about 10 seconds. Generally, the longer the treatment duration, the more significant the change in the layer quality. In other embodiments, during the exposure of the preliminary layer to the second active substance, the preliminary layer may be exposed to the second active substance for any suitable treatment duration, such as a treatment duration greater than or equal to 0.5 seconds or 1 second or 2 seconds or 3 seconds or 4 seconds or 5 seconds or 6 seconds or 7 seconds or 8 seconds or 9 seconds or 10 seconds and / or less than or equal to 5 minutes or 4 minutes or 3 minutes or 2 minutes or 1 minute or 50 seconds or 40 seconds or 30 seconds or 25 seconds or 20 seconds.

[0042] form Figure 1 In the embodiment of the present invention, the process of forming the preliminary layer 104 may include exposing the substrate to the precursor 105, and the process of exposing the substrate to the precursor 105 and the process of exposing the substrate to the first active substance 107 may be completely separated in time. In other embodiments, in which the process of forming the preliminary layer includes exposing the substrate to the precursor, the process of exposing the substrate to the precursor and the process of exposing the substrate to the first active substance may be implemented in any suitable manner. In some such embodiments, the process of exposing the substrate to the precursor and the process of exposing the substrate to the first active substance may occur simultaneously, or be separated in time at least partially, that is, partially or completely, and / or have the same, similar or different durations.

[0043] exist Figure 1 In the embodiment of the present invention, the process of forming the preliminary layer may include a first purge step 106 after exposing the substrate to the precursor 105 and a second purge step 108 after exposing the substrate to the first active material 107. In other embodiments, the process of forming the preliminary layer may include or exclude such a first purge step and / or such a second purge step.

[0044] like Figure 1 As shown by the dotted arrow extending from the second purge step 108 to the process of exposing the substrate to the first active substance 107, during the process of forming the preliminary layer 104, the process of exposing the substrate to the precursor 105 and the process of exposing the substrate to the first active substance 107 may be repeated. In other embodiments, the process of exposing the substrate to the precursor and the process of exposing the substrate to the first active substance may or may not be repeated.

[0045] exist Figure 1In embodiments of the present invention, the precursor may be, for example, hexamethyldisilazane. In other embodiments, any suitable precursor may be used to form the preparatory layer, and the scope of the present disclosure is not necessarily limited to any particular precursor. For example, in some embodiments, the precursor may include a silylamine, such as hexamethyldisilazane, 1,1,3,3-tetramethyl-1,3-divinyldisilazane, or 1,1,3,3-tetramethyldisilazane; and / or an aminosilane, such as bis(diethylamino)silane, bis(dimethylamino)silane, hexaethylaminodisilane, tetraethylaminosilane, bis(tert-butylamino)silane, trimethylsilyldiethylamine, or bis(dimethylamino)dimethylsilane; and / or silanes, such as monosilane (SiH4), disilane (Si2H6), trisilane (Si3H8); and / or silane halides, such as dichlorosilane (SiCl2H2) or diiodosilane (SiI2H2); and / or silicon halides, such as silicon tetraiodide (SiI4), silicon tetrabromide (SiBr4), silicon tetrachloride (SiCl4), hexachlorodisilane (Si2Cl6), hexaiododisilane (Si2I6), octaiodotrisilane (Si3I8).

[0046] Figure 1 The method 100 of an embodiment of the present invention may further include pre-treating the substrate 102 at one or more third processing stations in the plurality of processing stations that are separate from the one or more first processing stations and the one or more second processing stations. The process of pre-treating the substrate 102 may include exposing the substrate to a third active substance 103 formed using a third active substance generator that is different from the first active substance generator and / or the second active substance generator. In other embodiments, the method for depositing a layer onto a substrate may or may not include one or more such features. In some embodiments, the method for depositing a layer onto a substrate including such features may facilitate optimization of the process of forming a preliminary layer.

[0047] exist Figure 1 In the embodiment of the present invention, the third active material may include fluorine-containing ions and / or free radicals. In other embodiments, the third active material may include any suitable type of active material, for example, halogen-containing ions and / or free radicals, such as fluorine-containing, chlorine-containing and / or bromide-containing ions and / or free radicals; and / or oxygen-containing ions and / or free radicals; and / or nitrogen-containing ions and / or free radicals; and / or hydrogen-containing ions and / or free radicals.

[0048] Figure 1 The method 100 of an embodiment of the present invention may further include moving the substrate and the preparation layer 109 from the one or more first processing stations to the one or more second processing stations. In other embodiments, the method for depositing a layer onto a substrate may include or exclude moving the substrate and the preparation layer from the one or more first processing stations to the one or more second processing stations.

[0049] like Figure 1 As shown by the dashed arrow extending from the process of converting the preliminary layer 110 to the process of forming the preliminary layer 104, the Figure 1 In some embodiments, the process of forming the preliminary layer 104 and the conversion preliminary layer 110 is repeated. In some embodiments, repeating the process of forming the preliminary layer and the conversion preliminary layer of the method for depositing a layer on a substrate can help deposit a layer with a higher thickness and a desired quality. In other embodiments, the process of forming the preliminary layer and the conversion preliminary layer may or may not be repeated.

[0050] It should be understood that the above method is exemplary in nature, and these specific embodiments should not be considered restrictive, because many variations are possible. The specific methods, processes and steps described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown may be performed in the order shown, in other orders, or may be omitted in some cases.

[0051] Above, the features and details related to the first aspect are mainly discussed. In the following, the features and details related to the second aspect will be emphasized. The above-mentioned contents related to, for example, definitions, details, features and / or implementation methods are applicable to the second aspect discussed below, mutatis mutandis.

[0052] Figure 2 A semiconductor processing device 200 according to an embodiment is schematically depicted. In other embodiments, the semiconductor processing device may be used in conjunction with Figure 2 The semiconductor processing equipment 200 of the embodiments of the present invention may be the same, similar or different.

[0053] exist Figure 2 In an embodiment of the present invention, a semiconductor processing device 200 includes a processing chamber 201, the processing chamber 201 includes a housing 210, the housing 210 defines an internal volume 211 of the processing chamber 201, and a plurality of processing stations 220 for holding a substrate in the internal volume 211. The semiconductor processing device 200 also includes a plurality of active substance generators 230, which include a first active substance generator 231 configured to provide a first active substance 2311 to at least one or more first processing stations 221 of the plurality of processing stations 220, and a second active substance generator 232 different from the first active substance generator 231. The second active substance generator 232 is configured to provide a second active substance 2322 to at least one or more second processing stations 222 of the plurality of processing stations 220 that are separated from the one or more first processing stations 221. In addition, the semiconductor processing device 200 includes a control unit 250, which is configured to control at least the processing chamber 201 and the plurality of active substance generators 230 to deposit a layer onto the substrate by the method according to the first aspect.

[0054] exist Figure 2 In an embodiment of the present invention, the plurality of processing stations 220 includes a total of four processing stations. In particular, the one or more first processing stations 221 include two first processing stations, namely a main first processing station 2211 and a secondary first processing station 2212, and the one or more second processing stations 222 include two second processing stations, namely a main second processing station 2221 and a secondary second processing station 2222. In other embodiments, the plurality of processing stations, and / or one or more first processing stations in the plurality of processing stations, and / or one or more second processing stations in the plurality of processing stations may include any suitable number of processing stations. For example, in some embodiments, the plurality of processing stations may include a total of two to six processing stations, and / or one or more first processing stations in the plurality of processing stations may include one to three first processing stations, and / or one or more second processing stations in the plurality of processing stations may include one to three second processing stations.

[0055] Figure 2 The semiconductor processing equipment 200 of the embodiment may be specifically implemented as a quad chamber module (QCM) adapted or configured to be connected to a semiconductor manufacturing platform. In general, the semiconductor processing equipment may or may not be adapted or configured to be connected to a semiconductor manufacturing platform. In other embodiments, where the semiconductor processing equipment is adapted or configured to be connected to a semiconductor manufacturing platform, the semiconductor processing equipment may or may not be implemented as a QCM or a dual chamber module (DCM).

[0056] In some embodiments, the plurality of processing stations may further include one or more third processing stations separate from one or more first processing stations among the plurality of processing stations and one or more second processing stations among the plurality of processing stations. In such embodiments, the plurality of active substance generators may include a third active substance generator different from the first active substance generator among the plurality of active substance generators and / or the second active substance generator among the plurality of active substance generators, the third active substance generator being configured to provide a third active substance to the one or more third processing stations. For example, Figure 2 The secondary second processing station 2222 of the embodiment can be replaced with one or more third processing stations 223, including, for example, a single main third processing station 2231. In other embodiments, one or more third processing stations in the plurality of processing stations may include any suitable number of third processing stations, such as one, two, or three third processing stations.

[0057] exist Figure 2 In the embodiment of FIG. 2 , the processing chamber 201 includes a substrate transfer unit 202 for moving a first substrate A, a second substrate B, a third substrate C, and a fourth substrate D between respective processing stations of the plurality of processing stations 220. Figure 22, using arrows that extend cyclically between different views of the process chamber 201, the substrate transfer unit 202 is configured to move the first substrate A, the second substrate B, the third substrate C, and the fourth substrate D counterclockwise. In other embodiments, the process chamber may or may not include a substrate transfer unit for moving substrates between respective processing stations of the plurality of processing stations. In embodiments where the process chamber includes such a substrate transfer unit, the substrate transfer unit may be configured to move the substrates in any suitable manner, such as clockwise and / or counterclockwise.

[0058] Figure 2 The substrate transfer unit 202 of the embodiment includes a multi-arm substrate transfer member 203, generally referred to as a "tripod", which is centrally arranged within the processing chamber 201 and is configured to engage with each individual processing station in the plurality of processing stations 220. In other embodiments, where the processing chamber includes a substrate transfer unit for moving substrates between individual processing stations in the plurality of processing stations, the substrate transfer unit may or may not include such a multi-arm substrate transfer member. For example, in some embodiments, the substrate transfer unit may include a plurality of substrate transfer members, wherein each individual substrate transfer member in the plurality of substrate transfer members is configured to engage with a different subset of individual processing stations in the plurality of processing stations.

[0059] For example, at the main first processing station 2211, enter Figure 2 After the fourth substrate D is transferred to the processing chamber 201 of the embodiment of the present invention, the fourth substrate D may first undergo a process of forming a preliminary layer at the main first processing station 2211. Then, the fourth substrate D may be transferred to the subsidiary first processing station 2212 to undergo another process of forming a preliminary layer, which may be the same, similar, or different from the previous process of forming the preliminary layer. Then, the fourth substrate D may be continuously transferred to the main second processing station 2221 and the subsidiary second processing station 2222 to undergo one or more processes of converting the preliminary layer.

[0060] Alternatively, the main first processing station 2211 and the auxiliary first processing station 2212 enter Figure 2 After the processing chamber 201 of the embodiment of the present invention is opened, the fourth substrate D and the first substrate A may first undergo a process of forming a preliminary layer at the main first processing station 2211 and the auxiliary first processing station 2212, respectively. Then, the fourth substrate D and the first substrate A may be transferred to the main second processing station 2221 and the auxiliary second processing station 2222, respectively, to undergo a process of converting a preliminary layer.

[0061] exist Figure 2In an embodiment, each of the one or more first processing stations, i.e., the main first processing station 2211 and the deputy first processing station 2212, are arranged adjacent to each other, and each of the one or more second processing stations, i.e., the main second processing station 2221 and the deputy second processing station 2222, are also arranged adjacent to each other. Generally, such an arrangement can enable the same or similar processes to be performed in parallel on two or more substrates. In other embodiments, each of any type of processing stations, such as each of the one or more first processing stations, the one or more second processing stations, or the one or more third processing stations, can be arranged in any suitable manner, such as adjacent to each other, separated from each other, or in two or more separate groups of adjacent processing stations.

[0062] exist Figure 2 In the embodiment of the present invention, the first active substance generator 231 may be implemented as a remote plasma generator or an indirect plasma generator, and the second active substance generator 232 may be implemented as a direct plasma generator. In this case, the first active substance generator 231 may be further implemented as a capacitively coupled plasma (CCP) generator, and the second active substance generator 232 may also be implemented as a CCP generator.

[0063] Alternatively, Figure 2 Each of the first active species generator 231 and the second active species generator 232 of the embodiment may be implemented as a direct plasma generator. In this case, the first active species generator 231 may be further implemented as a capacitively coupled plasma (CCP) generator, and the second active species generator 232 may also be implemented as an inductively coupled plasma (ICP) generator.

[0064] Typically, the first active material generator implemented as a remote plasma generator or an indirect plasma generator can facilitate deposition of a more conformal layer. Additionally or alternatively, the first active material generator and / or the second active material generator implemented as a CCP generator can increase the yield of the process of converting the preliminary layer. Additionally or alternatively, the second active material generator implemented as an ICP generator can improve ion energy control during the process of converting the initial layer, which in turn can increase yield and / or produce a more significant change in layer quality.

[0065] In other embodiments, any individual active species generator, such as the first active species generator or the second active species generator or the third active species generator, may be implemented as any suitable type of active species generator, such as a remote plasma generator, or an indirect plasma generator, or a direct plasma generator. In such other embodiments, the individual active species generator may be configured to form active species based on any suitable phenomenon or phenomena. Thus, the individual active species generator may be implemented as, for example, a capacitively coupled plasma (CCP) generator or an inductively coupled plasma (ICP) generator or an electron cyclotron resonance (ECR) plasma generator.

[0066] In other embodiments, in which one of the first active species generator and the second active species generator is implemented as a remote plasma generator, an indirect plasma generator, or a direct plasma generator, the other of the first active species generator and the second active species generator may or may not be implemented as any other of the remote plasma generator, the indirect plasma generator, and the direct plasma generator.

[0067] In some embodiments, where one of the first active species generator and the second active species generator is configured to form active species based on a first set of one or more physical phenomena, the second active species generator may or may not be configured to form active species based on a second set of one or more physical phenomena that are different from the first set of one or more physical phenomena. For example, in an embodiment, where one of the first active species generator and the second active species generator is implemented as one of a capacitively coupled plasma (CCP) generator, an inductively coupled plasma (ICP) generator, or an electron cyclotron resonance (ECR) plasma generator, the other of the first active species generator and the second active species generator may or may not be implemented as any other of the CCP generator, the ICP generator, and the ECR plasma generator.

[0068] The exemplary embodiments disclosed above do not limit the scope of the present invention, as these embodiments are merely examples of embodiments of the present invention, and the scope of the present invention is defined by the appended claims and their legal equivalents. Any equivalent embodiments are within the scope of the present invention. In fact, various modifications of the present disclosure, such as alternative useful combinations of the described elements, in addition to those shown and described herein, will become apparent to those skilled in the art from the description. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

Claims

1. A method for depositing a layer onto a substrate, the method comprising: - providing a process chamber comprising a housing defining an interior volume of the process chamber and a plurality of process stations arranged within the interior volume; - forming a preparation layer on the substrate at one or more first processing stations among the plurality of processing stations, the process of forming the preparation layer comprising exposing the substrate to a first active material formed using a first active material generator; as well as - converting the preparation layer at one or more second processing stations of the plurality of processing stations separate from the one or more first processing stations, the process of converting the preparation layer comprising exposing the preparation layer to a second active material formed using a second active material generator different from the first active material generator.

2. The method according to claim 1, wherein: The process of forming the preliminary layer is implemented as a chemical vapor deposition (CVD) process, for example, a cyclic CVD process, such as an atomic layer deposition (ALD) process, for example, a time ALD process.

3. The method according to claim 1 or 2, wherein: The process of forming the preliminary layer is implemented as a plasma enhanced deposition process, such as a plasma enhanced CVD (PECVD) process or a plasma enhanced ALD (PEALD) process; Or a radical enhanced deposition process, such as a radical enhanced CVD (RECVD) process or a radical enhanced ALD (REALD) process.

4. A method according to any one of claims 1 to 3, used to at least partially fill a gap formed in a substrate.

5. The method according to any one of claims 1 to 4, wherein: The layer comprises, consists of or consists essentially of silicon (Si) and / or oxygen (O) and / or nitrogen (N) and / or carbon (C).

6. The method according to any one of claims 1 to 5, wherein: The first active substance includes rare gas ions and / or free radicals; and / or halogen ions and / or free radicals, such as fluorine-containing, chlorine-containing and / or bromide-containing ions and / or free radicals; and / or oxygen-containing ions and / or free radicals; and / or nitrogen-containing ions and / or free radicals; and / or hydrogen-containing ions and / or free radicals.

7. The method according to any one of claims 1 to 6, wherein: The second active substance includes rare gas ions and / or free radicals; and / or halogen ions and / or free radicals, such as fluorine-containing, chlorine-containing and / or bromide-containing ions and / or free radicals; and / or oxygen-containing ions and / or free radicals; and / or nitrogen-containing ions and / or free radicals; and / or hydrogen-containing ions and / or free radicals.

8. The method according to any one of claims 1 to 7, wherein: During the exposure of the preparation layer to the second active substance, the preparation layer is exposed to the second active substance for a treatment duration that is greater than or equal to 0.5 seconds or 1 second or 2 seconds or 3 seconds or 4 seconds or 5 seconds or 6 seconds or 7 seconds or 8 seconds or 9 seconds or 10 seconds and / or less than or equal to 5 minutes or 4 minutes or 3 minutes or 2 minutes or 1 minute or 50 seconds or 40 seconds or 30 seconds or 25 seconds or 20 seconds.

9. The method according to any one of claims 1 to 8, comprising pre-treating the substrate at one or more third processing stations among the plurality of processing stations, which are separate from the one or more first processing stations and the one or more second processing stations, the process of pre-treating the substrate comprising exposing the substrate to a third active substance formed by a third active substance generator different from the first active substance generator and / or the second active substance generator.

10. The method according to claim 9, wherein: The third active substance includes halogen-containing ions and / or free radicals, such as fluorine-containing, chlorine-containing and / or bromide-containing ions and / or free radicals; and / or oxygen-containing ions and / or free radicals; and / or nitrogen-containing ions and / or free radicals; and / or hydrogen-containing ions and / or free radicals.

11. The method according to any one of claims 1 to 10, wherein: The process of forming the preliminary layer and converting the preliminary layer is repeated.

12. The method according to any one of claims 1 to 11, wherein: The process of forming the preliminary layer includes exposing the substrate to a precursor.

13. The method according to claim 12, wherein: The processes of exposing the substrate to the precursor and exposing the substrate to the first active material are at least partially separated in time.

14. The method according to claim 12 or 13, wherein: The process of forming the preliminary layer includes a first purge step after exposing the substrate to the precursor and / or a second purge step after exposing the substrate to the first active material.

15. The method according to any one of claims 12 to 14, wherein: In the process of forming the preliminary layer, the process of exposing the substrate to the precursor and exposing the substrate to the first active material is repeated.

16. The method according to any one of claims 12 to 15, wherein: The precursors include silylamines, such as hexamethyldisilazane, 1,1,3,3-tetramethyl-1,3-divinyldisilazane or 1,1,3,3-tetramethyldisilazane; and / or aminosilanes, such as bis(diethylamino)silane, bis(dimethylamino)silane, hexaethylaminodisilane, tetraethylaminosilane, bis(tert-butylamino)silane, trimethylsilyldiethylamine or bis(dimethylamino)dimethylsilane; and / or silanes, For example, monosilane (SiH4), disilane (Si2H6), trisilane (Si3H8); and / or silane halides, such as dichlorosilane (SiCl2H2) or diiodosilane (SiI2H2); and / or silicon halides, such as silicon tetraiodide (SiI4), silicon tetrabromide (SiBr4), silicon tetrachloride (SiCl4), hexachlorodisilane (Si2Cl6), hexaiododisilane (Si2I6), octaiodotrisilane (Si3I8).

17. The method according to any one of claims 1 to 16, wherein: The method includes moving the substrate and the preparation layer from the one or more first processing stations to the one or more second processing stations.

18. A semiconductor processing device comprising: - a processing chamber comprising a housing defining an interior volume of the processing chamber and a plurality of processing stations within the interior volume for holding substrates; - a plurality of active substance generators, including at least a first active substance generator configured to provide a first active substance to at least one or more first processing stations of the plurality of processing stations, and a second active substance generator different from the first active substance generator, the second active substance generator configured to provide a second active substance to at least one or more second processing stations of the plurality of processing stations separated from the one or more first processing stations; as well as - a control unit configured to control at least a process chamber and a plurality of active substance generators for depositing a layer onto a substrate by a method according to any one of claims 1 to 17.

19. The method according to any one of claims 1 to 17 or the semiconductor processing apparatus according to claim 18, wherein: The plurality of processing stations comprises a total of two to six processing stations, and / or the one or more first processing stations comprises a total of one to three first processing stations, and / or the one or more second processing stations comprises a total of one to three second processing stations.

20. The method according to any one of claims 1 to 17, the semiconductor processing apparatus according to claim 18, or the method or semiconductor processing apparatus according to claim 19, wherein: The plurality of processing stations include one or more third processing stations separated from the one or more first processing stations and the one or more second processing stations, and the plurality of active substance generators include a third active substance generator different from the first active substance generator and / or the second active substance generator, the third active substance generator being configured to provide a third active substance to the one or more third processing stations.

21. The method according to any one of claims 1 to 17, the semiconductor processing apparatus according to claim 18, or the method or semiconductor processing apparatus according to claim 19 or 20, wherein: The processing chamber includes a substrate transfer unit for moving a substrate between respective ones of the plurality of processing stations.

22. The method according to any one of claims 1 to 17, the semiconductor processing apparatus according to claim 18, or the method or semiconductor processing apparatus according to any one of claims 19 to 21, wherein: One of the first active species generator and the second active species generator is implemented as a remote plasma generator, an indirect plasma generator, or a direct plasma generator, and the other of the first active species generator and the second active species generator is implemented as any other of the remote plasma generator, the indirect plasma generator, and the direct plasma generator.

23. The method or semiconductor processing apparatus of claim 22, wherein: The first active species generator is implemented as a remote plasma generator or an indirect plasma generator.

24. The method according to any one of claims 1 to 17, the semiconductor processing apparatus according to claim 18, or the method or semiconductor processing apparatus according to any one of claims 19 to 23, wherein: One of the first active substance generator and the second active substance generator is implemented as one of a capacitively coupled plasma (CCP) generator, an inductively coupled plasma (ICP) generator, or an electron cyclotron resonance (ECR) plasma generator, and the other of the first active substance generator and the second active substance generator is implemented as any other of a CCP generator, an ICP generator, and an ECR plasma generator.

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