IGBT module

Abstract

The invention belongs to the field of electronic component packaging, and particularly relates to an IGBT module which comprises a DBC board, the DBC board is provided with a first circuit, the first circuit comprises a first circuit, a second circuit and a third circuit, and the first circuit, the second circuit and the third circuit are all connected with a first switch tube and a second switch tube in series. The first switch tube and the second switch tube are the same in structure and each comprise an IGBT and a diode, one end of each diode is connected with a drain electrode D of the corresponding IGBT, the other end of each diode is connected with a source electrode S of the corresponding IGBT, and the diodes enable current flowing through the diodes to be in one-way conduction in the direction from the source electrode S of the corresponding IGBT to the drain electrode D of the corresponding IGBT. And the source electrodes S of the two IGBTs on the same line on the first line, the second line and the third line are connected.

Description

Technical Field

[0001] The invention relates to the field of electronic component packaging, and in particular to an IGBT module. Background Art

[0002] IGBT modules are currently widely used in different circuit controls. Different electrical signals can be output through different circuit designs to control different devices. However, their application in three-phase power is still rare. Summary of the invention

[0003] The main purpose of the present invention is to provide an IGBT module, in which a circuit is integrated, and the output of three-phase electricity can be achieved by controlling the circuit, thereby realizing the power supply to three-phase electrical equipment.

[0004] To achieve the above purpose, the technical solution adopted by the present invention is: an IGBT module, including a DBC board, a first circuit on the DBC board, the first circuit including a first line, a second line, and a third line, a first switch tube and a second switch tube are connected in series on the first line, the second line, and the third line, the first switch tube and the second switch tube have the same structure, both including an IGBT and a diode, one end of the diode is connected to the drain D of the IGBT, and the other end is connected to the source S of the IGBT, and the diode makes the current flowing therethrough unidirectionally conduct in the direction from the source S of the IGBT to the drain D, and the source S of two IGBTs on the same line on the first line, the second line, and the third line are connected; The first circuit further includes a fourth line, a fifth line, a sixth line, a seventh line, an eighth line, and a ninth line. Two ends of the seventh line, two ends of the eighth line, and two ends of the ninth line are electrically connected to the fourth line and the fifth line respectively. The seventh line is electrically connected to the first line at a first connection point. Diodes are respectively arranged on both sides of the first connection point A on the seventh line. and diode ,diode and diode The seventh line is unidirectionally conducted along the fifth line through the first connection point toward the fourth line; the eighth line is connected to the second line at the second connection point, and diodes are respectively arranged on both sides of the eighth line and located at the second connection point and diode ,diode and diode The eighth line is unidirectionally conducted along the fifth line through the second connection point toward the fourth line; the ninth line is connected to the third line at the third connection point, and diodes are respectively arranged on both sides of the ninth line at the third connection point. and diode ,diode and diode The ninth line is unidirectionally conducted along the fifth line through the third connection point C toward the fourth line; the two ends of the sixth line are electrically connected to the fourth line and the fifth line respectively, and two capacitors C1 and C2 are connected in series on the sixth line; the first line, the second line and the third line are all connected to the sixth line at the fourth connection point, and the fourth connection point is located on the part of the sixth line located between the two capacitors C1 and C2, and the first connection point, the second connection point and the third connection point are respectively located on both sides of the corresponding switch tube with the fourth connection point.

[0005] Preferably, it also includes a second circuit, which includes a tenth line, an eleventh line, a twelfth line and a thirteenth line. One end of the eleventh line, the twelfth line and the thirteenth line is respectively connected to the tenth line, and the other end is connected to the fifth line. The tenth line is connected to the fourth line. A third switch tube and a fourth switch tube are connected in series on the eleventh line, the twelfth line and the thirteenth line. The third switch tube and the fourth switch tube have the same structure and both include an IGBT and a diode arranged in parallel. One end of the diode is connected to the source S of the IGBT, and the other end is connected to the drain D of the IGBT. The diode is unidirectionally conductive in the direction from the source S of the IGBT to the drain D. The drain D of one of the IGBTs located on the same line among the eleventh line, the twelfth line and the thirteenth line is connected to the tenth line, and the source S of the two IGBTs is connected to the drain D. An output end is provided on the part of the eleventh line, the twelfth line and the thirteenth line and located between the two switch tubes for connecting to an electrical device.

[0006] Preferably, it also includes a base plate, a chip, a pin, and an outer frame. The outer frame is a rectangular structure when viewed from above. The outer frame is hollow and penetrated from top to bottom. The base plate is arranged at the bottom of the outer frame. The size of the base plate is configured to be sufficient to seal the bottom opening of the outer frame. The DBC board is welded to the upper surface of the base plate through a first tin layer. The DBC board includes a DBC copper layer, a DBC ceramic board and a circuit copper layer stacked in sequence from bottom to top. The first circuit and the second circuit are located on the circuit copper layer. The chip has one or more chips, which are welded to the upper surface of the circuit copper layer through a second tin layer. The first circuit or the second circuit on the circuit copper layer and the chip, as well as the first circuit or the second circuit on the circuit copper layer and the pin are electrically connected through aluminum wire.

[0007] Preferably, a cover plate is further included, the cover plate is used to cover the upper end opening of the outer frame, and a through hole is provided at the edge of the cover plate and at a position corresponding to the pin, and the pin passes through the through hole.

[0008] Preferably, stress holes are evenly arranged at the edge of the DBC copper layer, and two mutually perpendicular stress grooves are arranged in the DBC copper layer. The stress holes and stress grooves are used to release the stress on the DBC copper layer, and the depth of the stress grooves is equal to 1 / 3 of the thickness of the DBC copper layer.

[0009] Compared with the prior art, the present invention has the following beneficial effects: The IGBT module of the present invention integrates a first circuit and a second circuit, and the first circuit can rectify a three-phase voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a cross-sectional view of an IGBT module of the present invention; Figure 2 and Figure 3 1. The structure diagram of the IGBT module of the present invention from different angles; Figure 4 This is the structural diagram of the DBC copper layer; Figure 5 It is an enlarged view of point A; Figure 6 is a circuit diagram of a first circuit; Figure 7 is a circuit diagram of the second circuit. DETAILED DESCRIPTION

[0011] The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are only examples, and those skilled in the art may think of other obvious variations.

[0012] like Figure 1-5 As shown, an IGBT module includes a base plate 1, a DBC plate 3, a chip 5, a pin 8, and an outer frame 7. The outer frame 7 is a rectangular structure when viewed from above. The outer frame 7 is hollow and penetrates from top to bottom. The base plate 1 is arranged at the bottom of the outer frame 7. The size of the base plate 1 is configured to be sufficient to block the bottom opening of the outer frame 7. The DBC plate 3 is welded on the upper surface of the base plate 1 through a first tin layer 2. The DBC plate 3 includes a DBC copper layer 31, a DBC ceramic plate 32, and a circuit copper layer 33 stacked from bottom to top. The circuit copper layer 33 is engraved with a first circuit 100 and a second circuit 200. The chip 5 has one or more chips, which are welded on the upper surface of the circuit copper layer 33 through a second tin layer 4. The circuit copper layer 33 and the chip 5 and the circuit copper layer 33 and the pin 8 are electrically connected through an aluminum wire 6.

[0013] The IGBT module further includes a cover plate 9, which is used to cover the upper end opening of the outer frame 7. A through hole 91 is provided at the edge of the cover plate 9 and at a position corresponding to the pin 8, and the pin 8 passes through the through hole 91.

[0014] Stress holes 311 are evenly arranged at the edge of the DBC copper layer 31, and two mutually perpendicular stress grooves 312 are arranged on the DBC copper layer 31. The stress holes 311 and the stress grooves 312 are used to release the stress on the DBC copper layer 31. The depth of the stress grooves 312 is equal to 1 / 3 of the thickness of the DBC copper layer 31.

[0015] like Figure 6 As shown, the first circuit includes a first line 101, a second line 102, and a third line 103, and a first switch tube is connected in series on each of the three lines. And the second switch The first switch tube and the second switch tube have the same structure, both including an IGBT and a diode, one end of the diode is connected to the drain D of the IGBT, and the other end is connected to the source S of the IGBT, and the diode allows the current flowing through it to be unidirectionally conducted from the source S of the IGBT to the drain D. The sources S of the two IGBTs on the same line are connected, and when both IGBTs on the same line are not conducting, the line is not conducting; when one of the two IGBTs on the same line is conducting, the line is conducting; the two IGBTs on the same line cannot be conducting at the same time. The conduction of the IGBT is controlled by the gate G.

[0016] The first circuit further includes a fourth line 104, a fifth line 105, a sixth line 106, a seventh line 107, an eighth line 108, and a ninth line 109. Two ends of the seventh line 107, two ends of the eighth line 108, and two ends of the ninth line 109 are electrically connected to the fourth line 104 and the fifth line 105, respectively. The seventh line 107 is electrically connected to the first line 101 at a first connection point A. Diodes are provided on both sides of the seventh line 107 and the first connection point A. and diode ,diode and diode The seventh line 107 is unidirectionally conducted from the fifth line 105 through the first connection point A to the fourth line 104. The eighth line 108 is connected to the second line 102 at the second connection point B. Diodes are respectively arranged on both sides of the eighth line 108 at the second connection point B. and diode ,diode and diode The eighth line 108 is unidirectionally conducted from the fifth line 105 through the second connection point B to the fourth line 104. The ninth line 109 is connected to the third line 103 at the third connection point C. Diodes are respectively arranged on both sides of the ninth line 109 at the third connection point C. and diode ,diode and diode The ninth line 109 is unidirectionally conducted along the fifth line 105 through the third connection point C toward the fourth line 104. The two ends of the sixth line 106 are electrically connected to the fourth line 104 and the fifth line 105, respectively, and two capacitors C1 and C2 are connected in series on the sixth line 106. The first line 101, the second line 102, and the third line 103 are all connected to the sixth line 106 at the fourth connection point N, and the fourth connection point N is located on the part of the sixth line 106 located between the two capacitors C1 and C2, and the first connection point A, the second connection point B, and the third connection point C are respectively located on both sides of the corresponding switch tube with the fourth connection point N.

[0017] like Figure 7 As shown, the second circuit includes a tenth line 110, an eleventh line 111, a twelfth line 112 and a thirteenth line 113, one end of the eleventh line 111, the twelfth line 112 and the thirteenth line 113 are respectively connected to the tenth line 110, and the other end is connected to the fifth line 105, and the tenth line 110 is connected to the fourth line 104. The third switch tube and the fourth switch tube are connected in series on the eleventh line 111, the twelfth line 112 and the thirteenth line 113. The third switch tube and the fourth switch tube have the same structure, and both include IGBTs (T1, T2, T3, T4, T5, T6) and diodes (D1, D2, D3, D4, D5, D6) arranged in parallel. One end of the diode is connected to the source S of the IGBT, and the other end is connected to the drain D of the IGBT. The diode is unidirectionally conducted from the source S of the IGBT to the drain D. The drain D of one of the IGBTs on the same line is connected to the tenth line 110, and the source S of the two IGBTs is connected to the drain D. Output terminals (U, V, W) are arranged on the eleventh line 111, the twelfth line 112 and the thirteenth line 113 and the portion located between the two switch tubes for outputting to the electrical equipment.

[0018] The first circuit and the second circuit of the present invention need to be connected to other devices or circuits to work. The first circuit and the second circuit are connected to the external device through pins, and the switching of different switch tubes in the control circuit can meet different circuit requirements.

[0019] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions only describe the principles of the present invention. The present invention may be subject to various changes and improvements without departing from the spirit and scope of the present invention. These changes and improvements fall within the scope of the present invention. The scope of protection claimed by the present invention is defined by the attached claims and their equivalents.

Claims

1. An IGBT module, comprising a DBC board, wherein the DBC board has a first circuit, characterized in that: The first circuit includes a first circuit, a second circuit, and a third circuit. A first switch tube and a second switch tube are connected in series on the first circuit, the second circuit, and the third circuit. The first switch tube and the second switch tube have the same structure, and both include an IGBT and a diode. One end of the diode is connected to the drain electrode D of the IGBT, and the other end is connected to the source electrode S of the IGBT. The diode allows the current flowing therethrough to be unidirectionally conducted in a direction from the source electrode S of the IGBT to the drain electrode D. The source electrodes S of two IGBTs on the same circuit of the first circuit, the second circuit, and the third circuit are connected. The first circuit further includes a fourth line, a fifth line, a sixth line, a seventh line, an eighth line, and a ninth line. Two ends of the seventh line, two ends of the eighth line, and two ends of the ninth line are electrically connected to the fourth line and the fifth line respectively. The seventh line is electrically connected to the first line at a first connection point. Diodes are respectively arranged on both sides of the first connection point A on the seventh line. and diode ,diode and diode The seventh line is unidirectionally conducted along the fifth line through the first connection point toward the fourth line; the eighth line is connected to the second line at the second connection point, and diodes are respectively arranged on both sides of the eighth line and located at the second connection point and diode ,diode and diode The eighth line is unidirectionally conducted along the fifth line through the second connection point toward the fourth line; the ninth line is connected to the third line at the third connection point, and diodes are respectively arranged on both sides of the ninth line at the third connection point. and diode ,diode and diode The ninth line is unidirectionally conducted along the fifth line through the third connection point C toward the fourth line; the two ends of the sixth line are electrically connected to the fourth line and the fifth line respectively, and two capacitors C1 and C2 are connected in series on the sixth line; the first line, the second line and the third line are all connected to the sixth line at the fourth connection point, and the fourth connection point is located on the part of the sixth line located between the two capacitors C1 and C2, and the first connection point, the second connection point and the third connection point are respectively located on both sides of the corresponding switch tube with the fourth connection point.

2. An IGBT module according to claim 1, characterized in that: The invention also includes a second circuit, which includes a tenth line, an eleventh line, a twelfth line and a thirteenth line. One end of the eleventh line, the twelfth line and the thirteenth line are respectively connected to the tenth line, and the other end is connected to the fifth line. The tenth line is connected to the fourth line. A third switch tube and a fourth switch tube are connected in series on the eleventh line, the twelfth line and the thirteenth line. The third switch tube and the fourth switch tube have the same structure and both include an IGBT and a diode arranged in parallel. One end of the diode is connected to the source S of the IGBT, and the other end is connected to the drain D of the IGBT. The diode is unidirectionally conductive in a direction from the source S of the IGBT to the drain D. The drain D of one of the IGBTs located on the same line among the eleventh line, the twelfth line and the thirteenth line is connected to the tenth line. The source S of the two IGBTs is connected to the drain D. An output end is provided on the part of the eleventh line, the twelfth line and the thirteenth line and located between the two switch tubes for connecting to an electrical device.

3. An IGBT module according to claim 2, characterized in that: It also includes a base plate, a chip, a pin, and an outer frame. The outer frame is a rectangular structure when viewed from above. The outer frame is hollow and penetrates from top to bottom. The base plate is arranged at the bottom of the outer frame. The size of the base plate is configured to be sufficient to seal the bottom opening of the outer frame. The DBC board is welded to the upper surface of the base plate through a first tin layer. The DBC board includes a DBC copper layer, a DBC ceramic board and a circuit copper layer stacked in sequence from bottom to top. The first circuit and the second circuit are located on the circuit copper layer. The chip has one or more chips, which are welded to the upper surface of the circuit copper layer through a second tin layer. The first circuit or the second circuit on the circuit copper layer and the chip, as well as the first circuit or the second circuit on the circuit copper layer and the pin are electrically connected through aluminum wires.

4. An IGBT module according to claim 3, characterized in that: It also includes a cover plate, which is used to cover the upper end opening of the outer frame. A through hole is arranged at the edge of the cover plate and at a position corresponding to the pin, and the pin passes through the through hole.

5. An IGBT module according to claim 4, characterized in that: Stress holes are evenly arranged at the edge of the DBC copper layer, and two mutually perpendicular stress grooves are also arranged on the DBC copper layer. The stress holes and stress grooves are used to release the stress on the DBC copper layer. The depth of the stress groove is equal to 1 / 3 of the thickness of the DBC copper layer.

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