Low-temperature rectifier

Abstract

The invention discloses a low-temperature rectifier, and relates to the technical field of rectifiers, a center layer of the low-temperature rectifier is a high-temperature superconducting tape H3 and a high-temperature superconducting tape H4 which are insulated through a composite board and are symmetrically distributed, a copper layer D2 and a copper layer D3 are symmetrically distributed on the upper side and the lower side of the high-temperature superconducting tape H3, and a copper layer D4 and a copper layer D5 are symmetrically distributed on the upper side and the lower side of the high-temperature superconducting tape H4; a field effect transistor, a first insulating layer, a second insulating layer, a first copper layer, a copper signal layer and a copper-plated blind hole are arranged on one side, far away from the corresponding high-temperature superconducting tape, of any one of the copper layers D2-D5; the two first copper layers at the upper end and the lower end of the high-temperature superconducting tape H3 or the high-temperature superconducting tape H4 are of an integrated structure, and the ends, away from the high-temperature superconducting tape H3, of the two first copper layers are connected with the high-temperature superconducting tape H1 and the high-temperature superconducting tape H2 which are connected with the corresponding field-effect tubes respectively. The problems of low efficiency, high heating, poor universality, low power density and the like of a current low-temperature rectification scheme are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of rectifiers, and more particularly to a low-temperature rectifier. Background Art

[0002] With the development of high-temperature superconducting material technology, the second-generation high-temperature superconducting tape represented by REBCO has fully reached the practical level and can be widely used in power electrical engineering, magnetic confinement fusion reactors, scientific research equipment, magnetic resonance imaging, large motors, magnetic levitation and other fields. Although superconducting materials have no resistance under DC, they still produce losses under AC conditions, and they increase sharply with the increase of frequency. Therefore, the application of high-temperature superconductors is mainly based on DC conditions.

[0003] At present, the main power supply method is to use conventional power supply to supply power to superconducting equipment through variable temperature current lead. This method has the advantages of simple structure and easy maintenance under low current. However, as the current increases, the leakage heat and ohmic heat generated by the variable temperature current lead itself become one of the main heat loads of the superconducting magnet, and gradually become huge in structure, with high construction and operation and maintenance costs. Therefore, in order to replace the conventional power supply method, a variety of DC power supply methods such as superconducting rectifiers and flux pumps based on thermal conversion and magnetic conversion have been developed. These new power supply methods have the advantages of small power supply power, low energy consumption, and low construction and operation and maintenance costs. For high-current superconducting application scenarios, the superconducting system mainly works under DC and has the characteristics of large current and ultra-low voltage. Therefore, its own power loss is extremely low, while the conventional power supply and current lead power supply method cannot avoid the huge power loss caused by the leakage and heating of the power supply itself, transmission lines and current leads. In order to reduce the above power loss, the main solution is to isolate the conduction leakage heat of room temperature and low temperature environment, and feed the current into the superconducting equipment by AC coupling in vacuum and rectifying it to DC. Therefore, the key components include superconducting transformers and low-temperature rectifiers. At present, superconducting transformer technology has basically matured, and many devices have been put into operation worldwide. However, low-temperature rectifiers are still not widely used. The main reason is that the current low-temperature rectification solutions have low efficiency, high heat generation, poor versatility, and low power density, making it difficult to replace conventional power supply methods.

[0004] In view of this, this application is hereby made. Summary of the invention

[0005] The object of the present invention is to provide a low-temperature rectifier, which is used as a rectifying component of a superconducting transformer to address the problems of low efficiency, high heat generation, poor versatility, and low power density of current low-temperature rectification schemes.

[0006] The above technical objectives of the present invention are achieved through the following technical solutions:

[0007] In a first aspect, the present application provides a low-temperature rectifier, wherein the central layer of the low-temperature rectifier is two high-temperature superconducting tapes H3 and H4 insulated by a composite plate and symmetrically distributed, and copper layers D2 and D3 are symmetrically distributed on the upper and lower sides of the high-temperature superconducting tape H3, and copper layers D4 and D5 are symmetrically distributed on the upper and lower sides of the high-temperature superconducting tape H4;

[0008] The copper layer D2, or the copper layer D3, or the copper layer D4, or the copper layer D5, is provided with a field effect tube, a first insulating layer, a second insulating layer, a first copper layer, a copper signal layer, and a copper-plated blind hole on the side away from the corresponding high-temperature superconducting tape. The corresponding copper layer D2, or the copper layer D3, or the copper layer D4, or the copper layer D5 is connected to the field effect tube, and the first insulating layer, the first copper layer, the second insulating layer, and the copper signal layer overlap in sequence; the copper-plated blind hole penetrates the first copper layer and the second insulating layer, and half penetrates the first insulating layer, and the two ends of the copper-plated blind hole are respectively connected to the copper signal layer and the field effect tube;

[0009] The two first copper layers at the upper and lower ends of the high-temperature superconducting tape H3 or H4 are an integrated structure, and the ends of the two first copper layers away from the high-temperature superconducting tape H3 are respectively connected to the high-temperature superconducting tape H1 and the high-temperature superconducting tape H2 connected to the corresponding field effect transistor.

[0010] Based on the above technical solution, the present invention can also be improved as follows.

[0011] Furthermore, the copper layer D2 and the copper layer D3 are respectively connected to the drain of the corresponding field effect transistor by soldering with a low temperature solder, and the copper layer D4 and the copper layer D5 are respectively connected to the source of the corresponding field effect transistor by soldering with a low temperature solder.

[0012] Furthermore, the first copper layers located on the upper and lower sides of the high temperature superconducting tape H3 are respectively connected to the source of the corresponding field effect transistor, and the first copper layers located on the upper and lower sides of the high temperature superconducting tape H4 are respectively connected to the drain of the corresponding field effect transistor.

[0013] Furthermore, the high-temperature superconducting tape H3 and the copper layers D2 and D3 welded on its upper and lower sides, as well as the high-temperature superconducting tape H4 and the copper layers D4 and D5 welded on its upper and lower sides all pass through the end of the low-temperature rectifier, and the passing length accounts for 10% to 20% of the overall length of the low-temperature rectifier.

[0014] Furthermore, the high-temperature superconducting tape H3 and the copper layers D2 and D3 welded on its upper and lower sides together form the current output positive electrode of the low-temperature rectifier, and the high-temperature superconducting tape H4 and the copper layers D4 and D5 welded on its upper and lower sides together form the current output negative electrode of the low-temperature rectifier.

[0015] Furthermore, the high temperature superconducting tape H1 and the high temperature superconducting tape H2 form the AC current input terminal of the low temperature rectifier.

[0016] Furthermore, each of the above copper signal layers forms a control input terminal of a corresponding field effect transistor.

[0017] Furthermore, the above-mentioned composite board is a glass fiber resin composite board.

[0018] Furthermore, each copper layer and each insulating layer are bonded by epoxy resin; each copper layer and each high-temperature superconducting tape, each high-temperature superconducting tape and the corresponding field effect transistor, and each copper layer and the corresponding field effect transistor are brazed by low-temperature solder.

[0019] In a second aspect, the present application provides an application of a low-temperature rectifier as described in any one of the first aspects in AC to DC conversion.

[0020] Compared with the prior art, the present invention has at least the following beneficial effects:

[0021] In the present application, compared with rectification methods such as heating and applying a magnetic field, the combination of a low-temperature field effect tube and a high-temperature superconducting tape not only ensures lower heat generation, but also greatly improves the rectification frequency and rectification efficiency; the structure of three layers of superconducting tape sandwiching two layers of field effect tubes greatly reduces the resistance of conventional conductive materials, and most of the resistance comes from the on-resistance of the field effect tube, so the overall resistance of the rectifier can be reduced to an extremely small level; the multi-layer plate structure design allows the rectifier to be manufactured using printed circuit board technology, reducing the manufacturing difficulty and cost of the rectifier; the rectifier input is arranged on the upper and lower surfaces of the rectifier, which maximizes the joint overlap area of ​​the high-temperature superconducting tape, reduces the resistance of the superconducting tape joint, and reduces the device volume. At the same time, the rectifier output is arranged in the middle layer of the rectifier and a joint section is reserved, which is conducive to the preparation of the output joint and reduces the joint resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The drawings described herein are used to provide a further understanding of the embodiments of the present invention, constitute a part of this application, and do not constitute a limitation of the embodiments of the present invention. In the drawings:

[0023] Figure 1 It is a cross-sectional view of a plane perpendicular to the current transmission direction of the high-temperature superconducting tape of the low-temperature rectifier in an embodiment of the present invention;

[0024] Figure 2 A mid-plane cross-sectional view of a plane formed by a current transmission direction of a high-temperature superconducting tape and a stacking direction of a low-temperature rectifier in an embodiment of the present invention;

[0025] Figure 3 A top view of the stacking direction surface of the low-temperature rectifier in an embodiment of the present invention;

[0026] Figure 4 is an equivalent circuit diagram of a low-temperature rectifier in an embodiment of the present invention. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0028] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0030] In the description of the embodiments of the present invention, it should be noted that if the terms "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the product of the invention is usually placed when used. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0031] In addition, the terms "horizontal", "vertical", "overhanging" and the like do not mean that the components must be absolutely horizontal or overhanging, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0032] In the description of the embodiments of the present invention, "plurality" means at least 2.

[0033] In the description of the embodiments of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal connection of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0034] Embodiment 1: In order to solve the problems of low efficiency, high heat generation, poor versatility, low power density and the like of the current low-temperature rectification scheme, and to be used as a rectification component of a superconducting transformer, this embodiment provides a low-temperature rectifier, the central layer of which is two high-temperature superconducting tapes H3 and H4 insulated by a composite plate and symmetrically distributed, the upper and lower sides of the high-temperature superconducting tape H3 are symmetrically distributed with copper layers D2 and copper layers D3, and the upper and lower sides of the high-temperature superconducting tape H4 are symmetrically distributed with copper layers D4 and copper layers D5.

[0035] Specifically, the main components of the low-temperature rectifier include field effect tubes, high-temperature superconducting tapes, high-purity copper, glass fiber resin composite boards, etc. The field effect tube is a functional component that rectifies AC to DC, and the high-temperature superconducting tape is used to carry out the unimpeded transmission of high-density and large currents. High-purity oxygen-free copper is mainly used as a stabilizer for the high-temperature superconducting tape, providing sufficient heat dissipation and current sharing capabilities, reducing joint resistance and providing shunt protection in abnormal situations, and serving as the gate control signal circuit of the field effect tube. The glass fiber resin composite board mainly provides insulation and basic support structures.

[0036] Optionally, the central layer of the low temperature rectifier is two high temperature superconducting tapes H3 and H4 insulated by a glass fiber resin composite plate and symmetrically distributed, such as Figure 1 and Figure 2 As shown, high-purity copper layers D2, D3, D4, and D5 are symmetrically distributed on the upper and lower sides of the high-temperature superconducting tape. The high-temperature superconducting tape H3 and the copper layers D2 and D3, and the high-temperature superconducting tape H4 and the copper layers D4 and D5 are brazed together by low-temperature brazing filler metal. Since the low-temperature rectifier structure is symmetrically distributed along the parallel central axis and the vertical central axis, the structure can be described by a quarter symmetrical part:

[0037] The copper layer D2 is brazed with low-temperature solder to connect the drain of the field effect tube Q2 (the corresponding Q3 is the drain, Q1 and Q4 are the source), the field effect tube Q2 is embedded in and penetrates the glass fiber resin composite board insulation layer J5, the source of the field effect tube Q2 is brazed with the copper layer D1 on its top (the corresponding Q3 is the source, Q1 and Q4 are the drain), the copper layer D1 is brazed with the upper high-temperature superconducting tape H1 by low-temperature solder, and the copper layer D1 is bonded with the glass fiber resin composite board insulation layer J5 by epoxy resin. The copper layer D1 is bonded with the glass fiber resin composite board insulation layer J2 by ​​epoxy resin, and the copper signal layer C2 is bonded with the glass fiber resin composite board insulation layer J2 by ​​epoxy resin.

[0038] Wherein, the copper layer D2, or the copper layer D3, or the copper layer D4, or the copper layer D5, on the side away from the corresponding high temperature superconducting tape, is provided with a field effect transistor, a first insulating layer, a second insulating layer, a first copper layer, a copper signal layer and a copper-plated blind hole, such as Figure 1As shown, it can be seen that the low temperature rectifier structure is symmetrically distributed along the parallel central axis and the vertical central axis, so the structure can be described by a quarter symmetrical part. The corresponding copper layer D2, or copper layer D3, or copper layer D4, or copper layer D5 connects the field effect tube at the corresponding position. The first insulating layer ( Figure 1 Insulation layer 5, J5), the first copper layer ( Figure 1 The copper layer 1, D1), the second insulating layer ( Figure 1 Insulation layer 2, J2) and copper signal layer ( Figure 1 The signal layers in , C2) are overlapped in sequence.

[0039] Optionally, the copper-plated blind hole penetrates the first copper layer and the second insulating layer and half penetrates the first insulating layer, and two ends of the copper-plated blind hole are respectively connected to the copper signal layer and the field effect transistor.

[0040] Among them, the copper-plated blind hole passes through the insulating layer J2 and the copper layer D1, such as Figure 1 and Figure 2 As shown, the semi-penetrating insulating layer J5 is used to connect the gate of the effect tube Q2 and the copper layer C2, and the copper-plated blind hole is insulated from the copper layer D1 through the insulating layer J2.

[0041] Furthermore, the two first copper layers at the upper and lower ends of the high-temperature superconducting tape H3 or H4 are an integrated structure, and the ends of the two first copper layers away from the high-temperature superconducting tape H3 are respectively connected to the high-temperature superconducting tape H1 and the high-temperature superconducting tape H2 connected to the corresponding field effect transistor.

[0042] Optionally, the copper layer D2 and the copper layer D3 are respectively connected to the drain of the corresponding field effect transistor by soldering with a low-temperature solder, and the copper layer D4 and the copper layer D5 are respectively connected to the source of the corresponding field effect transistor by soldering with a low-temperature solder.

[0043] Optionally, the first copper layers located on the upper and lower sides of the high-temperature superconducting tape H3 are respectively connected to the source of the corresponding field effect transistor, and the first copper layers located on the upper and lower sides of the high-temperature superconducting tape H4 are respectively connected to the drain of the corresponding field effect transistor.

[0044] Optionally, the high-temperature superconducting tape H3 and the copper layers D2 and D3 welded on its upper and lower sides, as well as the high-temperature superconducting tape H4 and the copper layers D4 and D5 welded on its upper and lower sides all pass through the end of the low-temperature rectifier, and the passing length accounts for 10% to 20% of the overall length of the low-temperature rectifier.

[0045] Optionally, the high-temperature superconducting tape H3 and the copper layers D2 and D3 welded on its upper and lower sides together form the current output positive electrode of the low-temperature rectifier, and the high-temperature superconducting tape H4 and the copper layers D4 and D5 welded on its upper and lower sides together form the current output negative electrode of the low-temperature rectifier.

[0046] Optionally, the high temperature superconducting tape H1 and the high temperature superconducting tape H2 form an alternating current input terminal of a low temperature rectifier.

[0047] Optionally, each of the above copper signal layers forms a control input terminal of a corresponding field effect transistor.

[0048] Optionally, the above-mentioned composite board is a glass fiber resin composite board.

[0049] Optionally, each copper layer and each insulating layer are bonded by epoxy resin; each copper layer and each high-temperature superconducting tape, each high-temperature superconducting tape and the corresponding field effect transistor, and each copper layer and the corresponding field effect transistor are brazed by low-temperature solder.

[0050] Among them, see Figure 4 , Figure 4 : is the equivalent circuit schematic diagram of the low-temperature rectifier in this embodiment. The high-temperature superconducting tapes H3 and H4 and the copper tapes D2, D3, D4 and D5 welded above and below them are inserted from the end of the low-temperature rectifier. Figure 3 As shown, the length of the lead-out conductor accounts for about 10% to 20% of the overall length of the low-temperature rectifier; the high-temperature superconducting tape H3 and the copper tapes D2 and D3 serve as the current output positive electrode of the low-temperature rectifier, as shown in FIG. Figure 1 and Figure 2 As shown, the high temperature superconducting tape H4 and the copper tapes D4 and D5 serve as the current output negative electrode of the low temperature rectifier, and the high temperature superconducting tapes H1 and H2 serve as the AC current input terminals of the low temperature rectifier. The copper signal layers C1, C2, C3, and C4 serve as the control input terminals of the low temperature rectifier, and the on and off states of the field effect tubes Q1, Q2, Q3, and Q4 are controlled by voltage to realize the conversion of AC into DC.

[0051] In this embodiment, a single functional module of the low temperature rectifier includes a group of 4 field effect transistors. The larger the current, the more modules there are. Figure 1 They are arranged repeatedly in the vertical direction of the paper, and the positive current output pole of each module is connected through the high-temperature superconducting tape H3 and copper tapes D2 and D3. The negative current output pole of each module is connected through the high-temperature superconducting tape H4 and copper tapes D4 and D5. The high-temperature superconducting tapes H1 and H2 are connected to the AC current input terminal of each module. The copper signal layers C1, C2, C3, and C4 are connected to the control input terminals of each module.

[0052] Example 2: The embodiment of the present application provides a low-temperature rectifier with a maximum operating current of 400A and an output resistance of 22uΩ when operating at a temperature of 77K. The main components of the low-temperature rectifier in this embodiment include field effect tubes, high-temperature superconducting tapes, high-purity copper, glass fiber resin composite boards, etc. The field effect tube is a functional component that rectifies AC into DC, and the REBCO high-temperature superconducting tape is used to undertake the unimpeded transmission of high-density and large currents. High-purity oxygen-free copper mainly serves as a stabilizer for the high-temperature superconducting tape, providing sufficient heat dissipation and current sharing capabilities, reducing joint resistance and providing shunt protection in abnormal situations, and serving as a gate control signal circuit for the field effect tube. The glass fiber resin composite board mainly provides insulation and basic support structure.

[0053] Furthermore, the low temperature rectifier may include 20 groups of 80 field effect tubes, each of which is composed of 4 field effect tubes to form a basic rectifier unit. The structure of a single basic rectifier unit is as follows: Figure 1 , Figure 2 and Figure 3 As shown, the gate voltage of the field effect tube is 9V, the resistance is 0.2mΩ, the reverse breakdown voltage is 30V at 77K, and the package thickness is 1mm; the width of the high-temperature superconducting tape is 10mm, H1, H2, H3, and H4 are Bi2223 high-temperature superconducting tapes with a thickness of 0.2mm; the conductivity of the high-purity copper tape at 77K is 4nΩm, the thickness of D1, D2, D3, D4, D5, and D6 is 0.4mm, and the thickness of C1, C2, C3, and C4 is 0.1mm; the glass fiber resin composite board is made of G10 material, the thickness of J1, J2, J3, and J4 is 0.1mm, and the thickness of J5 and J6 is 1mm.

[0054] like Figure 1 As shown, the central layer of the low-temperature rectifier is two high-temperature superconducting tapes H3 and H4 insulated by glass fiber resin composite plates and symmetrically distributed. High-purity copper layers D2, D3, D4, and D5 are symmetrically distributed on the upper and lower sides of the high-temperature superconducting tapes. The high-temperature superconducting tape H3 and the copper layers D2 and D3, and the high-temperature superconducting tape H4 and the copper layers D4 and D5 are brazed together by low-temperature brazing filler metal. Since the low-temperature rectifier structure is symmetrically distributed along the parallel central axis and the vertical central axis, the structure is described by a quarter of the symmetrical part: Copper layer D2 The drain of the field effect tube Q2 is connected by low-temperature soldering (the corresponding Q3 is the drain, Q1 and Q4 are the source), the effect tube Q2 is embedded in and penetrates the glass fiber resin composite board insulation layer J5, the source of the effect tube Q2 is connected to the copper layer D1 on its top by low-temperature soldering (the corresponding Q3 is the source, Q1 and Q4 are the drain), the copper layer D1 is connected to the upper high-temperature superconducting tape H1 by low-temperature soldering, and the copper layer D1 is bonded to the glass fiber resin composite board insulation layer J5 by epoxy resin. The copper layer D1 is bonded to the glass fiber resin composite board insulation layer J2 by ​​epoxy resin, and the copper signal layer C2 is bonded to the glass fiber resin composite board insulation layer J2 by ​​epoxy resin.

[0055] like Figure 1 ,2 As shown, the copper-plated blind hole passes through the insulating layer J2 and the copper layer D1, and the semi-penetrating insulating layer J5 is used to connect the gate of the effect tube Q2 and the copper layer C2. The copper-plated blind hole is insulated from the copper layer D1 by the insulating layer J2. The blind hole has a diameter of 0.5 mm, a depth of 1.2 mm, and a copper plating thickness of 0.02 mm.

[0056] like Figure 3 As shown, the total length of the low-temperature rectifier is 120mm, the width is 22mm, and the thickness is 4.2mm. The high-temperature superconducting tapes H3, H4 and the copper tapes D2, D3, D4, and D5 welded above and below them pass through the end of the low-temperature rectifier, with a length of 20mm. The high-temperature superconducting tape H3 and the copper tapes D2 and D3 serve as the positive current output electrode of the low-temperature rectifier, the high-temperature superconducting tape H4 and the copper tapes D4 and D5 serve as the negative current output electrode of the low-temperature rectifier, and the high-temperature superconducting tapes H1 and H2 serve as the AC current input terminal of the low-temperature rectifier. The copper signal layers C1, C2, C3, and C4 serve as the control input terminal of the low-temperature rectifier; see Figure 4 , Figure 4 It is the equivalent circuit diagram of the low-temperature rectifier. When the input current H1 is positive and H2 is negative, a positive voltage is applied between C2 and H1 and between C4 and H4. C2 and C4 are positive, and zero voltage or negative voltage is applied between C1 and H1 and between C3 and H3. When the input current H2 is positive and H1 is negative, a positive voltage is applied between C1 and H1 and between C3 and H3. C1 and C3 are positive, and zero voltage or negative voltage is applied between C2 and H1 and between C4 and H4.

[0057] Specifically, under normal operating conditions at 77K, the heating power of the low-temperature rectifier in this embodiment is about 3.52W, while the minimum heating power of the 400A current lead is about 30W. In comparison, the low-temperature rectifier greatly reduces power loss and improves energy utilization.

[0058] Example 3: This embodiment of the present application provides an application of a low-temperature rectifier as in any one of Example 1 or Example 2 in AC to DC conversion.

[0059] The specific implementation methods described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific implementation method of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A low temperature rectifier, characterized in that: The central layer of the low-temperature rectifier is two high-temperature superconducting tapes H3 and H4 which are insulated by a composite plate and symmetrically distributed. The copper layers D2 and D3 are symmetrically distributed on the upper and lower sides of the high-temperature superconducting tape H3, and the copper layers D4 and D5 are symmetrically distributed on the upper and lower sides of the high-temperature superconducting tape H4. The copper layer D2, or copper layer D3, or copper layer D4, or copper layer D5, is provided with a field effect tube, a first insulating layer, a second insulating layer, a first copper layer, a copper signal layer, and a copper-plated blind hole on the side away from the corresponding high-temperature superconducting tape, and the corresponding copper layer D2, or copper layer D3, or copper layer D4, or copper layer D5 is connected to the field effect tube, and the first insulating layer, the first copper layer, the second insulating layer, and the copper signal layer overlap in sequence; the copper-plated blind hole penetrates the first copper layer and the second insulating layer, and half penetrates the first insulating layer, and the two ends of the copper-plated blind hole are respectively connected to the copper signal layer and the field effect tube; The two first copper layers at the upper and lower ends of the high-temperature superconducting tape H3 or the high-temperature superconducting tape H4 are an integrated structure, and the ends of the two first copper layers away from the high-temperature superconducting tape H3 are respectively connected to the high-temperature superconducting tape H1 and the high-temperature superconducting tape H2 connected to the corresponding field effect transistor.

2. A low temperature rectifier according to claim 1, characterized in that: The copper layer D2 and the copper layer D3 are respectively connected to the drain of the corresponding field effect tube by soldering with a low-temperature solder, and the copper layer D4 and the copper layer D5 are respectively connected to the source of the corresponding field effect tube by soldering with a low-temperature solder.

3. A low temperature rectifier according to claim 2, characterized in that: The first copper layers located on the upper and lower sides of the high temperature superconducting tape H3 are respectively connected to the source of the corresponding field effect transistor, and the first copper layers located on the upper and lower sides of the high temperature superconducting tape H4 are respectively connected to the drain of the corresponding field effect transistor.

4. A low temperature rectifier according to claim 3, characterized in that: The high-temperature superconducting tape H3 and the copper layers D2 and D3 welded on its upper and lower sides, as well as the high-temperature superconducting tape H4 and the copper layers D4 and D5 welded on its upper and lower sides all pass through the end of the low-temperature rectifier, and the passing length accounts for 10% to 20% of the overall length of the low-temperature rectifier.

5. A low temperature rectifier according to claim 4, characterized in that: The high-temperature superconducting tape H3 and the copper layers D2 and D3 welded on its upper and lower sides together form the current output positive electrode of the low-temperature rectifier, and the high-temperature superconducting tape H4 and the copper layers D4 and D5 welded on its upper and lower sides together form the current output negative electrode of the low-temperature rectifier.

6. A low temperature rectifier according to claim 5, characterized in that: The high temperature superconducting tape H1 and the high temperature superconducting tape H2 form an alternating current input terminal of a low temperature rectifier.

7. A low temperature rectifier according to claim 6, characterized in that: Each of the copper signal layers forms a control input terminal of a corresponding field effect transistor.

8. A low temperature rectifier according to claim 1, characterized in that: The composite board is a glass fiber resin composite board.

9. A low temperature rectifier according to claim 1, characterized in that: Each copper layer is bonded to each insulating layer by epoxy resin; each copper layer is brazed to each high-temperature superconducting tape, each high-temperature superconducting tape is brazed to the corresponding field effect tube, and each copper layer is brazed to the corresponding field effect tube by low-temperature brazing material.

10. Use of a low-temperature rectifier according to any one of claims 1 to 9 in AC to DC conversion.

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