Display device having vertical electrode structure and method of manufacturing display device

Abstract

A display device and a method of manufacturing the same are provided. The display device includes: a display substrate including a driving circuit; an array layer provided on the display substrate and including a plurality of grooves; a micro semiconductor chip provided in a recess of the plurality of recesses; a second electrode connected to the first type semiconductor layer from a lower surface of the display substrate; a first wiring connected to the first electrode; and a second wiring connected to the second electrode, the miniature semiconductor chip including: a first type semiconductor layer; an active layer provided on the first type semiconductor layer; a second type semiconductor layer provided on the active layer; and a first electrode provided on the second type semiconductor layer.

Description

Technical Field

[0001] The present disclosure relates to a display device having a vertical electrode structure and a method of manufacturing the display device. Background Art

[0002] Liquid crystal display (LCD), organic light emitting diode display (OLED), etc. have been widely used as display devices. Recently, the technology of manufacturing high-resolution display devices using micro-light emitting devices has attracted attention. Due to the low power consumption and environmental protection characteristics of light emitting diodes (LEDs), the industrial demand for them is growing, and LEDs are not only used for lighting systems or liquid crystal display (LCD) backlights, but also for display devices. When using micro-semiconductor chips to manufacture display devices, pick-and-place methods are widely used to transfer micro-semiconductor chips. However, as the size of micro-semiconductor chips decreases and the size of display devices increases, this method may lead to a decrease in productivity.

[0003] A display device including a micro semiconductor chip requires a variety of technologies, such as a transfer technology for transferring a micro light emitting device to a desired display pixel position, a repair process, a method for achieving a desired color, and the like. Summary of the invention

[0004] Provided are a display device having a vertical electrode structure and a method for manufacturing the display device having the vertical electrode structure.

[0005] According to one aspect of an embodiment, a display device includes: a display substrate including a driving circuit; an array layer provided on the display substrate and including a plurality of grooves; a micro-semiconductor chip provided in a groove among the plurality of grooves; a second electrode connected to a first type semiconductor layer from a lower surface of the display substrate; a first wiring connected to the first electrode; and a second wiring connected to the second electrode, the micro-semiconductor chip including: a first type semiconductor layer; an active layer provided on the first type semiconductor layer; a second type semiconductor layer provided on the active layer; and a first electrode provided on the second type semiconductor layer.

[0006] The display device may further include a plurality of micro semiconductor chips, at least one micro semiconductor chip of the plurality of micro semiconductor chips being provided in each of the plurality of grooves.

[0007] The display substrate may further include a via hole through which the micro semiconductor chip is exposed, and in which the second electrode is provided.

[0008] The display device may further include a reflective layer provided on a side wall of each of the plurality of grooves.

[0009] The first wiring may face away from the second electrode.

[0010] In the case where the micro semiconductor chip is omitted from one of the plurality of grooves, the first wiring may be configured not to contact the second electrode.

[0011] In a plan view, the first wiring may have a shape including a concave portion, and the second electrode is provided in the concave portion.

[0012] The first wiring and the second electrode may be positioned in parallel in a plan view.

[0013] The display device may further include an insulating layer, the insulating layer being on the array layer, and a maximum thickness of the insulating layer being greater than a thickness of the array layer.

[0014] The display device may further include a color conversion layer provided on the array layer and configured to convert a color of light emitted from the micro semiconductor chip.

[0015] According to one aspect of the present disclosure, a method for manufacturing a display device is provided, the display device including a micro-semiconductor chip, the micro-semiconductor chip including a first type semiconductor layer, an active layer provided on the first type semiconductor layer, a second type semiconductor layer provided on the active layer, and a first electrode provided on the second type semiconductor layer, the method including: forming an array layer on a display substrate that may include a driving circuit; forming a plurality of grooves in the array layer; transferring the micro-semiconductor chip to one of the plurality of grooves so that the first electrode is located in an upper portion of the one of the plurality of grooves; exposing the first type semiconductor layer of the micro-semiconductor chip by forming a via hole in the display substrate from a lower surface of the display substrate; forming a second electrode in the via hole and connecting the second electrode to the first type semiconductor layer; and connecting a first wiring to the first electrode and connecting a second wiring to the second electrode.

[0016] Transferring the micro semiconductor chips includes transferring at least two micro semiconductor chips to each of the plurality of recesses.

[0017] Micro-semiconductor chips can be transferred using a wet self-alignment method.

[0018] The method may further include forming a reflective layer on a sidewall of each of the plurality of grooves.

[0019] The first wiring may not overlap with the second electrode.

[0020] In the case where the micro semiconductor chip is omitted from the one of the plurality of grooves, the first wiring may be configured not to contact the second electrode.

[0021] In a plan view, the first wiring may have a shape including a concave portion, and the second electrode is in the concave portion.

[0022] The first wiring and the second electrode may be positioned in parallel in a plan view.

[0023] The method may further include forming an insulating layer, the insulating layer being on the array layer, and a maximum thickness of the insulating layer may be greater than a thickness of the array layer.

[0024] The method may further include forming a color conversion layer on the array layer, the color conversion layer configured to convert a color of light emitted from the micro semiconductor chip.

[0025] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented non-limiting example embodiments of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0027] Figure 1 is a diagram showing a display device having a vertical electrode structure according to an embodiment;

[0028] Figure 2A is a diagram showing a display device having a vertical electrode structure according to an embodiment;

[0029] Figure 2B , Figure 2C , Figure 2D and Figure 2E are diagrams showing various examples of an electrode arrangement structure in a display device having a vertical electrode structure according to an embodiment;

[0030] Figure 3 is a diagram showing a display device having a vertical electrode structure according to an embodiment;

[0031] Figure 4 is a diagram showing a case where a micro semiconductor chip is omitted from a display device according to an embodiment;

[0032] Figure 5 and Figure 6 is a diagram showing an arrangement relationship between electrodes and wirings in a display device according to an embodiment;

[0033] Figure 7 is a diagram showing an example of providing a color conversion layer in a display device having a vertical electrode structure according to an embodiment;

[0034] Figures 8 to 12 is a diagram illustrating a method of manufacturing a display device according to an embodiment;

[0035] Fig.13is a schematic block diagram of an electronic device according to an embodiment;

[0036] Fig.14 is a diagram showing an example in which a display device according to an embodiment is applied to a mobile device;

[0037] Fig.15 is a diagram showing an example in which the display device according to the embodiment is applied to a display device for a vehicle;

[0038] Fig.16 is a diagram showing an example in which a display device according to an embodiment is applied to augmented reality glasses;

[0039] Fig.17 is a diagram showing an example in which a display device according to an embodiment is applied to a sign; and

[0040] Fig.18 is a diagram showing an example in which the display device according to the embodiment is applied to a wearable display. DETAILED DESCRIPTION

[0041] Reference will now be made in detail to embodiments of the present disclosure, examples of which are shown in the accompanying drawings, wherein the same reference numerals refer to the same elements throughout. In this regard, embodiments of the present disclosure may have different forms and should not be construed as being limited to the descriptions set forth herein. Therefore, by reference to the accompanying drawings, the embodiments described below are provided to explain the non-limiting example aspects of the present disclosure. As used herein, the term "and / or" includes any and all combinations of one or more related listed items. Expressions such as "at least one of..." modify the entire column of elements when following a column of elements, without modifying the individual elements in the column.

[0042] Hereinafter, a display device having a vertical electrode structure and a method for manufacturing a display device according to some embodiments will be described in detail with reference to the accompanying drawings. In the accompanying drawings, the sizes of the components in the accompanying drawings may be exaggerated for clarity and convenience of explanation. Although terms such as "first", "second", etc. may be used to describe various components, these components are not necessarily limited to the above terms. The above terms are only used to distinguish one component from another component.

[0043] Unless the context has a clearly different meaning, a singular expression also includes a plural expression. When a part "includes" a component, unless otherwise described, another component may be further included, rather than excluding the existence of the other component. For ease of explanation, the size or thickness of the components in the drawings may be arbitrarily exaggerated. In addition, when a material layer is described as being arranged on a substrate or another layer, the material layer may be in contact with another layer, or a third layer may be present between the material layer and the other layer. In the following embodiments, the materials constituting each layer are provided only as examples, and other materials may also be used.

[0044] In addition, the terms "section", "module" and the like refer to a unit that processes at least one function or operation and may be implemented by hardware, software or a combination thereof.

[0045] The specific implementations shown and described here are illustrative examples of embodiments and are not intended to limit the scope of the embodiments in any way. For the sake of brevity, other functional aspects of conventional electronic devices, control systems, software development, and systems may not be described in detail. In addition, the connecting lines or connectors shown in the various figures presented are intended to represent the functional relationships and / or physical or logical connections between the various elements. It should be noted that many alternative or additional functional relationships, physical connections, or logical connections may exist in actual equipment.

[0046] Use of the terms "a", "an" and "the" and similar referents should be construed to cover both the singular and the plural.

[0047] In addition, the operations of all methods described herein can be performed in any suitable order, unless otherwise specified herein or otherwise the context is clearly contradictory. The use of any and all exemplary language (e.g., "such as") provided herein is only intended to better illustrate the technical ideas, and does not constitute a limitation on the scope of rights, unless otherwise specified.

[0048] Figure 1 is a diagram of a display device according to an embodiment.

[0049] The display device 100 includes a display substrate 110 including a driving circuit 105 , an array layer 120 provided on the display substrate 110 , and a micro semiconductor chip 140 provided on the array layer 120 .

[0050] The display substrate 110 may include a driving circuit 105 (also referred to as a "driving device") driving the micro semiconductor chip 140, and the driving circuit 105 may include at least one capacitor and at least one transistor. The display substrate 110 may be a silicon substrate or a glass substrate.

[0051] The array layer 120 may include a plurality of grooves 130 , and the plurality of grooves 130 may be arranged in a matrix structure.

[0052] The micro semiconductor chip 140 may include various micro semiconductor chips having a micro size, which may be 1000 μm or less or 200 μm or less. The micro semiconductor chip 140 may include, for example, a light emitting diode (LED), a complementary metal oxide semiconductor (CMOS), a CMOS image sensor (CIS), a vertical cavity surface emitting laser (VCSEL), a photodiode (PD), a memory device, a two-dimensional (2D) material device, etc. The two-dimensional (2D) material may be graphene or a carbon nanotube (CNT).

[0053] The micro semiconductor chip 140 may include a first type semiconductor layer 141 , an active layer 142 provided on the first type semiconductor layer 141 , a second type semiconductor layer 143 provided on the active layer 142 , and a first electrode 144 provided on the second type semiconductor layer 143 .

[0054] The first type semiconductor layer 141 may be an n-type semiconductor layer. The first type semiconductor layer 141 may include a group III-V n-type semiconductor, such as n-GaN. The first type semiconductor layer 141 may have a single layer structure or a multi-layer structure.

[0055] The active layer 142 may be provided on the upper surface of the first type semiconductor layer 141. When electrons and holes are coupled, the active layer 142 may generate light. The active layer 142 may have a multiple quantum well (MQW) structure or a single quantum well (SQW) structure. The active layer 142 may include a III-V semiconductor, such as GaN.

[0056] The second type semiconductor layer 143 may be provided on the upper surface of the active layer 142. The second type semiconductor layer 143 may be, for example, a p-type semiconductor layer. The second type semiconductor layer 143 may include a III-V group p-type semiconductor, such as p-GaN. The second type semiconductor layer 143 may have a single layer structure or a multilayer structure. Optionally, when the first type semiconductor layer 141 is a p-type semiconductor layer, the second type semiconductor layer 143 may be an n-type semiconductor layer.

[0057] A via hole 113 may be provided in the display substrate 110, and a second electrode 115 may be provided in the via hole 113 so that the second electrode 115 may be connected to the first type semiconductor layer 141. The via hole 113 may penetrate the display substrate 110 so that the first type semiconductor layer 141 is exposed. An upper opening 114 of the via hole 113 may expose the first type semiconductor layer 141. When forming the via hole 113, the size of the upper opening 114 of the via hole 113 may be smaller than the cross-sectional size of the micro semiconductor chip 140 to prevent the micro semiconductor chip 140 from falling through the via hole 113.

[0058] The micro semiconductor chip 140 has a vertical electrode structure, and the vertical electrode structure of the micro semiconductor chip 140 can be formed by connecting the second electrode 115 to the first type semiconductor layer 141 through the via hole 113 penetrating from the lower surface of the display substrate 110 without a wafer bonding process. The first wiring 160 can be connected to the first electrode 144, and the second wiring 150 can be connected to the second electrode 115.

[0059] A reflective layer 125 may be provided on the sidewall of the groove 130. The reflective layer 125 may include a metal having a high reflectivity. The reflective layer 125 may reflect light emitted in a lateral direction of the micro semiconductor chip 140 and allow the light to travel upward, thereby improving light emission efficiency. The groove 130 may have a depth D that is less than a maximum thickness dm of the micro semiconductor chip 140. In addition, an insulating layer 145 may be provided on the array layer 120. The insulating layer 145 may include a resin, SiO 2 , SiN or TiO 2 .

[0060] exist Figure 1 In the example in which a micro semiconductor chip 140 is provided in one of the grooves 130, Figure 2A An example is shown in which a plurality of micro semiconductor chips 140 are provided in one of the grooves 130. For example, two micro semiconductor chips 140 may be provided in the groove 130. When a plurality of micro semiconductor chips 140 are provided in the groove 130, even if one micro semiconductor chip 140 is omitted, the display device 100 may operate normally by the remaining micro semiconductor chips 140 without a repair process. Figure 2A Use and Figure 1 Components with the same reference numerals as those in the drawings have substantially the same functions and configurations, and thus, repeated descriptions thereof may be omitted.

[0061] refer to Figure 2A , the display device 100A includes a via hole 113 provided in the display substrate 110 and a second electrode 116 provided in the via hole 113. The second electrode 116 may be provided to contact all of the first type semiconductor layers 141 of the two micro semiconductor chips 140. The portion of the second electrode 116 contacting the first type semiconductor layer 141 of the micro semiconductor chip 140 may be determined by the upper opening 114 of the via hole 113.

[0062] Figure 2B , Figure 2C , Figure 2D and Figure 2ESeveral examples of arrangement relationship of multiple micro semiconductor chips 140 and second electrodes 116 in upper openings 114 of via holes 113 are shown. Second electrodes 116 may be located in upper openings 114 to at least partially overlap each of first type semiconductor layers 141 of multiple micro semiconductor chips 140.

[0063] Figure 3 and Figure 2A The difference is that, in the display device 100B, two micro semiconductor chips 140 are provided in the first groove 131 and the second groove 132, respectively. The first groove 131 and the second groove 132 can constitute one sub-pixel. The second electrode 116 provided in the display substrate 110 can contact both the first type semiconductor layer 141 of the micro semiconductor chip 140 in the first groove 131 and the first type semiconductor layer 141 of the micro semiconductor chip 140 in the second groove 132. In addition, the first wiring 161 can contact both the first electrode 144 of the micro semiconductor chip 140 in the first groove 131 and the first electrode 144 of the micro semiconductor chip 140 in the second groove 132. As described above, by changing the structure of the via hole 113 according to the arrangement structure of the micro semiconductor chip 140, the second electrode 116 can be easily connected to the first type semiconductor layer 141 of the micro semiconductor chip 140.

[0064] Figure 4 Shown in Figure 3 The display device 100B shown in FIG. 1 is a case where the micro semiconductor chip 140 is missing from the first groove 131. Even if the micro semiconductor chip 140 is missing from the first groove 131, the micro semiconductor chip 140 in the second groove 132 can still operate normally, and thus the display device 100B can be manufactured without a repair process for the micro semiconductor chip 140.

[0065] Meanwhile, when the micro semiconductor chip 140 is omitted from the first groove 131 or the second groove 132 , the first wiring 161 may be configured not to contact the second electrode 116 to prevent an electrical short circuit from occurring.

[0066] For example, the maximum thickness Dmax of the insulating layer 145 may be greater than the thickness of the array layer 120 or the depth D of the first groove 131. Since the insulating layer 145 is thicker than the array layer 120, when the first wiring 161 is formed after etching the insulating layer 145, the first wiring 161 may be formed only at a certain depth of the insulating layer 145 and may not reach the second electrode 116. Therefore, when the micro semiconductor chip 140 is omitted from the first groove 131, the display device 100B can prevent an electrical short circuit from occurring by not connecting the first wiring 161 to the second electrode 116.

[0067] Figure 5Another example of an electrode structure for preventing an electrical short circuit from occurring when a micro semiconductor chip 140 is omitted is shown. Two micro semiconductor chips 140 may be desired to be transferred to the groove 130. Here, only one micro semiconductor chip 140 is transferred to the groove 130, and the other micro semiconductor chip 140A may be omitted. For ease of explanation, Figure 5 A plan view of the first wiring 161 and the second electrode 116 projected onto the display substrate 110 is shown. The first wiring 161 may be disposed so as not to face the second electrode 116. In other words, when the first wiring 161 and the second electrode 116 are projected onto the display substrate 110, the first wiring 161 may not overlap the second electrode 116. For example, when the first wiring 161 is projected onto the display substrate 110, the first wiring 161 may have a shape including a concave portion 162, and when the second electrode 116 is projected onto the display substrate 110, the second electrode 116 may be disposed in the concave portion 162. The first wiring 161 and the second electrode 116 may be disposed so as not to overlap each other, so that the first wiring 161 contacts the first electrode 144 of the micro semiconductor chip 140 and the second electrode 116 contacts the first type semiconductor layer 141 of the micro semiconductor chip 140.

[0068] Figure 6 Another example of an electrode structure for preventing an electrical short circuit from occurring when a micro semiconductor chip 140 is omitted is shown. Figure 6 , when the first wiring 161 and the second electrode 116 are projected onto the display substrate 110 , the first wiring 161 and the second electrode 116 may be positioned in parallel.

[0069] As described above, even if at least one micro semiconductor chip 140A is omitted, the display device 100A and the display device 100B according to the embodiment can operate normally without a repair process by the remaining micro semiconductor chips 140. In addition, the display device 100A and the display device 100B can prevent a short circuit from occurring at a position where the micro semiconductor chip 140A is omitted.

[0070] Figure 7 A color conversion layer provided in a display device is shown.

[0071] Figure 7 One pixel PX of the display device 100C is shown, and the pixel PX may include a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3. A barrier rib 170 may be provided between the first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3. A reflective layer 175 may be further provided on the barrier rib 170.

[0072] A color conversion layer may be provided in each of the first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3. The color conversion layer may include a first color conversion layer 171 that converts light from the micro-semiconductor chip 140 into a first color light, a second color conversion layer 172 that converts the light into a second color light, and a third color conversion layer 173 that converts the light into a third color light. The micro-semiconductor chip 140 may emit light of a first color, such as blue light. However, this is only an example, and light of other wavelengths that can excite the color conversion layer may be emitted. The second color light may be, for example, green light, and the third color light may be, for example, red light.

[0073] When the micro semiconductor chip 140 emits blue light, the first color conversion layer 171 may include a resin that transmits blue light without light conversion. The second color conversion layer 172 may convert the blue light emitted from the micro semiconductor chip 140 to emit green light. The second color conversion layer 172 may include quantum dots (QDs) that are excited by blue light and emit green light, and the QDs may have a core-shell structure including a core portion and a shell portion, or may have a particle structure without a shell. The core-shell structure may be a single shell or multi-shell structure, such as a double shell structure.

[0074] The QDs may include II-VI semiconductors, III-V semiconductors, IV-VI semiconductors, IV semiconductors, and / or graphene QDs. The QDs may include, for example, Cd, Se, Zn, S, and / or InP, and may have a diameter of tens of nm or less, such as about 10 nm or less. The second color conversion layer 172 may also include a phosphor that is excited by the blue light emitted from the micro semiconductor chip 140 and emits green light.

[0075] The third color conversion layer 173 may convert the blue light emitted from the micro semiconductor chip 140 into red light and emit the red light. The third color conversion layer 173 may include a QD of a certain size (the QD is excited by the blue light to emit red light), or may include a phosphor (the phosphor is excited by the blue light emitted from the micro semiconductor chip 140 to emit green light). A color image may be displayed by the first color conversion layer 171, the second color conversion layer 172, and the third color conversion layer 173.

[0076] According to an embodiment of the present disclosure, each of the first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 may include one or more micro semiconductor chips 140. For example, one or more micro semiconductor chips 140 may be provided to correspond to each of the first color conversion layer 171, the second color conversion layer 172, and the third color conversion layer 173, respectively.

[0077] As described above, the display device according to the embodiment can have a vertical electrode structure and ensure a simple and high-precision electrode connection structure without bonding transfer. In addition, when a micro semiconductor chip is omitted from a redundant structure including a plurality of micro semiconductor chips in a sub-pixel, the display device can operate normally without a repair process by preventing an electrical short circuit from occurring.

[0078] Next, a method of manufacturing a display device according to an embodiment is described.

[0079] Reference Figure 8 , an array layer 120 may be formed on a display substrate 110 including a driving circuit 105. A plurality of grooves 130 may be formed in the array layer 120. Here, an example in which the display substrate 110 and the array layer 120 are provided separately is shown, but the display substrate 110 and the array layer 120 may also be configured as one body. In addition, a reflective layer 125 may be further formed on a sidewall of the groove 130. The micro semiconductor chip 140 may be transferred to the groove 130.

[0080] Fig. 9 1 is a diagram for explaining a method of transferring a micro semiconductor chip 140 to a display substrate 110 and an array layer 120 .

[0081] The micro semiconductor chip 140 may be transferred to the array layer 120 in various ways. The micro semiconductor chip 140 may be transferred by using a dry transfer method such as a pick and place method or a wet transfer method using a liquid such as a wet self-alignment method.

[0082] Fig. 9 An example of a wet transfer method is shown.

[0083] An array layer 120 including a plurality of grooves 130 is formed on a display substrate 110. The grooves 130 may provide locations in which micro semiconductor chips 140 may be placed. The micro semiconductor chips 140 may include, for example, LEDs, CMOS, CIS, VCSEL, PD, memory devices, 2D material devices, etc. The 2D material may be graphene or CNT.

[0084] Liquid can be provided to groove 130. Any kind of liquid that will not corrode or damage micro semiconductor chip 140 can be used. Liquid can include, for example, one or more combinations selected from the group consisting of water, ethanol, alcohol, polyol, ketone, halogenated hydrocarbon, acetone, flux and organic solvent. Organic solvent can include, for example, isopropyl alcohol (IPA). The type of liquid is not limited thereto, but can be changed in various ways.

[0085] The method of supplying liquid to the groove 130 may include, for example, a jetting method, a dispensing method, an inkjet dot method, a method of flowing liquid to the array layer 120 , etc. The liquid supply amount may be adjusted in various ways to accurately fill or overfill the groove 130 .

[0086] A plurality of micro semiconductor chips 140 may be provided to the array layer 120. The micro semiconductor chips 140 may be sprayed to the array layer 120 without other liquids, or may be supplied in the form of a suspension. The method of providing the micro semiconductor chips 140 included in the suspension may include, for example, a spraying method, a dispensing method for providing a liquid dropwise, an inkjet method for discharging a liquid like a printing method, a method for flowing a suspension to the array layer 120, and the like.

[0087] By contacting and scanning the array layer 120 with the scraper 190, the micro semiconductor chip 140 may be transferred to the groove 130. The micro semiconductor chip 140 may be transferred so that Figure 1 The first electrode 144 is directed toward the upper portion of the groove 130. When the micro semiconductor chip 140 is transferred, the first electrode 144 may be directed toward the upper portion of the groove 130 due to the interaction of the surface energy difference between the side having the first electrode 144 and the side not having the first electrode 144 and the liquid.

[0088] Reference Fig.10 , an insulating layer 145 may be formed on the array layer 120. The insulating layer 145 may be formed thicker than the thickness of the array layer 120. Alternatively, the insulating layer 145 may be thinly formed on the array layer 120 as a passivation film. The insulating layer 145 may be patterned, and then the first wiring 160 and the second wiring 150 may be formed. The first wiring 160 may be connected to the first electrode 144 of the micro semiconductor chip 140.

[0089] Reference Fig.11 , a via hole 113 may be formed from the lower surface 111 of the display substrate 110. The via hole 113 may penetrate the display substrate 110 so that the first type semiconductor layer 141 of the micro semiconductor chip 140 is exposed.

[0090] Reference Fig.12 , a second electrode 115 may be formed in the via hole 113 so that the second electrode 115 may be connected to the first type semiconductor layer 141. In addition, a second wiring 150 may be connected to the other side of the second electrode 115. Then, the via hole 113 may be filled with the same material 110a as that of the display substrate 110.

[0091] As described above, in the method of manufacturing a display device according to an embodiment, by transferring the micro semiconductor chip 140 having a vertical electrode structure to the display substrate 110, the bonding transfer process can be omitted, and by forming the second electrode 115 in the via hole 113 penetrating the display substrate 110, the vertical electrode structure can be easily electrically connected.

[0092] Fig.13 is a block diagram of an electronic device including a display device according to an embodiment.

[0093] refer to Fig.13 , the electronic device 8201 may be provided in the network environment 8200. In the network environment 8200, the electronic device 8201 may communicate with another electronic device 8202 through a first network 8298 (e.g., a short-distance wireless communication network, etc.), or communicate with another electronic device (e.g., an external electronic device 8204) and / or a server 8208 through a second network 8299 (e.g., a long-distance wireless communication network, etc.). The electronic device 8201 may communicate with the external electronic device 8204 through the server 8208. The electronic device 8201 may include a processor 8220, a memory 8230, an input device 8250, an audio output device 8255, a display device 8260, an audio module 8270, a sensor module 8276, an interface 8277, a tactile module 8279, a camera module 8280, a power management module 8288, a battery 8289, a communication module 8290, a user identification module 8296, and / or an antenna module 8297. In the electronic device 8201, some components may be omitted, or other components may be added. Some components may be implemented by an integrated circuit. For example, the sensor module 8276 (e.g., a fingerprint sensor, an iris sensor, an illumination sensor, etc.) may be implemented by being embedded in the display device 8260 (display, etc.).

[0094] The processor 8220 can control one or more other components (e.g., hardware and software components, etc.) of the electronic device 8201 connected to the processor 8220 by executing software (e.g., program 8240, etc.), and perform various data processing or calculations. As part of the data processing or calculation, the processor 8220 can load commands and / or data received from other components (e.g., sensor module 8276, communication module 8290, etc.) into the volatile memory 8232, process the commands and / or data stored in the volatile memory 8232, and store the result data in the non-volatile memory 8234. The non-volatile memory 8234 may include an internal memory 8236 and an external memory 8238. The processor 8220 may include a main processor 8221 (e.g., a central processing unit, an application processor, etc.) and an auxiliary processor 8223 (e.g., a graphics processing unit, an image signal processor, a sensor hub processor, a communication processor, etc.), and the auxiliary processor 8223 may operate independently of the main processor 8221 or operate together with the main processor 8221. The auxiliary processor 8223 may use less power than the main processor 8221 and may perform specialized functions.

[0095] The auxiliary processor 8223 may control functions and / or states related to some of the components of the electronic device 8201 (e.g., the display device 8260, the sensor module 8276, the communication module 8290, etc.), replacing the main processor 8221 when the main processor 8221 is in a suspended state (sleep state) or together with the main processor 8221 when the main processor 8221 is in an active state (application execution state). The auxiliary processor 8223 (e.g., an image signal processor, a communication processor, etc.) may be implemented as a part of other functionally related components (camera module 8280, communication module 8290, etc.).

[0096] The memory 8230 may store various data required by the components of the electronic device 8201 (e.g., the processor 8220, the sensor module 8276, etc.). The data may include, for example, input data and / or output data of software (program 8240, etc.) and commands related thereto. The memory 8230 may include a volatile memory 8232 and / or a non-volatile memory 8234.

[0097] The program 8240 may be stored as software in the memory 8230 , and may include an operating system 8242 , middleware 8244 , and / or an application 8246 .

[0098] The input device 8250 may receive commands and / or data from outside the electronic device 8201 (user, etc.) to be used for components (processor 8220, etc.) of the electronic device 8201. The input device 8250 may include a remote controller, a microphone, a mouse, a keyboard, and / or a digital pen (stylus, etc.).

[0099] The audio output device 8255 can output audio signals to the outside of the electronic device 8201. The audio output device 8255 may include a speaker and / or a receiver. The speaker may be used for general purposes such as multimedia playback or recording playback, and the receiver may be used to answer calls. The receiver may be implemented by being connected as part of the speaker or by an independent separate device.

[0100] The display device 8260 may visually provide information to the outside of the electronic device 8201. The display device 8260 may include a display, a holographic device or a projector, and a control circuit for controlling the corresponding device. The display device 8260 may include a display device according to an embodiment. The display device 8260 may include a touch circuit configured to detect a touch and / or a sensor circuit (pressure sensor, etc.) configured to measure the strength of the force generated by the touch.

[0101] The audio module 8270 can convert sound into an electrical signal or convert an electrical signal into sound in reverse. The audio module 8270 can obtain sound through the input device 8250, or output sound through a speaker and / or earphone of another electronic device (electronic device 8202, etc.) directly or wirelessly connected to the audio output device 8255 and / or the electronic device 8201.

[0102] The sensor module 8276 can detect the operating state (power, temperature, etc.) or external environment state (user state, etc.) of the electronic device 8201, and generate an electrical signal and / or data value corresponding to the detected state. The sensor module 8276 may include a gesture sensor, a gyroscope sensor, an atmospheric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an IR sensor, a biometric sensor, a temperature sensor, a humidity sensor, and / or an illumination sensor.

[0103] The interface 8277 may support one or more designated protocols for the electronic device 8201 to be directly or wirelessly connected to another electronic device (electronic device 8202, etc.). The interface 8277 may include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and / or an audio interface.

[0104] The connection end 8278 may include a connector for physically connecting the electronic device 8201 to another electronic device (electronic device 8202, etc.). The connection end 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (headphone connector, etc.).

[0105] The haptic module 8279 may convert the electrical signal into mechanical stimulation (vibration, motion, etc.) or electrical stimulation that the user may sense through tactile or kinesthetic sense. The haptic module 8279 may include a motor, a piezoelectric device, and / or an electrical stimulation device.

[0106] The camera module 8280 may capture still images and videos. The camera module 8280 may include a lens assembly including one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in the camera module 8280 may collect light emitted from an object as an image capture target.

[0107] The power management module 8288 may manage power supplied to the electronic device 8201. The power management module 8288 may be implemented as a part of a power management integrated circuit (PMIC).

[0108] The battery 8289 can supply power to the components of the electronic device 8201. The battery 8289 can include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0109] The communication module 8290 can establish a wired communication channel and / or a wireless communication channel between the electronic device 8201 and another electronic device (electronic device 8202, external electronic device 8204, server 8208, etc.), and support communication through the established communication channel. The communication module 8290 can operate independently of the processor 8220 (application processor, etc.), and can include one or more communication processors that support direct communication and / or wireless communication. The communication module 8290 may include a wireless communication module 8292 (cellular communication module, short-range wireless communication module, global navigation satellite system (GNSS) communication module, etc.) and / or a wired communication module 8294 (local area network (LAN) communication module, power line communication module, etc.). Among the above-mentioned communication modules, the corresponding communication module can communicate with another electronic device through a first network 8298 (short-range communication network, such as Bluetooth, WiFi direct connection or infrared data association (IrDA)) or a second network 8299 (long-range communication network, such as a cellular network, the Internet or a computer network (LAN, WAN, etc.)). These various types of communication modules may be integrated into one component (single chip, etc.), or may be implemented as multiple separate components (multiple chips). The wireless communication module 8292 may verify and authenticate the electronic device 8201 in a communication network such as the first network 8298 and / or the second network 8299 by using the user information (International Mobile Subscriber Identifier (IMSI) etc.) stored in the user identification module 8296.

[0110] The antenna module 8297 can send signals and / or power to the outside (another electronic device, etc.), or receive signals and / or power from the outside. The antenna may include a transmitter formed with a conductive pattern on a substrate (printed circuit board (PCB), etc.). The antenna module 8297 may include one or more antennas. When the antenna module 8297 includes multiple antennas, the communication module 8290 can select an antenna suitable for the communication method used in the communication network (such as the first network 8298 and / or the second network 8299) from these antennas. Signals and / or power can be sent or received between the communication module 8290 and another electronic device through the selected antenna. Other components (RFIC, etc.) other than the antenna may be included as part of the antenna module 8297.

[0111] Some components may be connected to each other via a communication method between peripheral devices (bus, general purpose input and output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), etc.) and may exchange signals (commands, data, etc.) with each other.

[0112] Commands or data may be sent or received between the electronic device 8201 and the external electronic device 8204 by a server 8208 connected to the second network 8299. The electronic device 8202 and the external electronic device 8204 may be of the same or different type as the electronic device 8201. All or some operations performed in the electronic device 8201 may be performed in one or more other electronic devices (e.g., the electronic device 8202, the external electronic device 8204, and the server 8208). For example, when the electronic device 8201 needs to perform a function or service, the electronic device 8201 may request one or more electronic devices to perform part or all of the function or service, rather than performing the function or service itself. The one or more electronic devices receiving the request may perform additional functions or services related to the request, and send the results of the execution to the electronic device 8201. To this end, cloud computing, distributed computing, and / or client-server computing technologies may be used.

[0113] Fig.14 9100 is a diagram showing an example in which a display device according to an embodiment is applied to a mobile device. A mobile device 9100 may include a display device 9110, and the display device 9110 may include a display device according to an embodiment. The display device 9110 may have a foldable structure, for example, a multi-foldable structure.

[0114] Fig.15 1 is a diagram showing an example in which a display device according to an embodiment is applied to a display device for a vehicle. The display device may be a head-up display device 9200 for a vehicle, and may include a display 9210 and an optical path changing member 9220 configured to change the optical path so that the driver can see an image generated on the display 9210.

[0115] Fig.16 9300 is a diagram showing an example in which a display device according to an embodiment is applied to augmented reality glasses. The augmented reality glasses 9300 may include a projection system 9310 configured to form an image and an element 9320 configured to guide the image from the projection system 9310 to the user's eyes. The projection system 9310 may include a display device according to an embodiment.

[0116] Fig.17 9400 is a diagram showing an example in which a display device according to an embodiment is applied to a sign. The sign 9400 may be used for outdoor advertising using a digital information display, and the content of the advertisement may be controlled through a network. The sign 9400 may be, for example, a reference Fig.13 The electronic device described is implemented.

[0117] Fig.189500 is a diagram showing an example in which a display device according to an embodiment is applied to a wearable display. Fig.13 The electronic device described is implemented.

[0118] The display device according to the embodiment may also be applied to various products such as a rollable TV, a stretchable display, and the like.

[0119] The display device according to the embodiment has a vertical electrode structure and has an electrode structure including a via hole in a display substrate and an electrode in the via hole. In addition, the display device according to the embodiment can prevent a short circuit from occurring when a micro semiconductor chip is omitted.

[0120] The method of manufacturing a display device according to an embodiment may provide a method of forming a via hole in a display substrate including a driving circuit and forming an electrode in the via hole.

[0121] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more non-limiting example embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the present disclosure.

[0122] This application is based on and claims the benefit of priority from Korean Patent Application No. 10-2023-0089049 filed in the Korean Intellectual Property Office on July 10, 2023, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A display device, comprising: A display substrate including a drive circuit; an array layer provided on the display substrate and comprising a plurality of grooves; A micro semiconductor chip is provided in a groove among the plurality of grooves, the micro semiconductor chip comprising: a first type semiconductor layer; an active layer provided on the first type semiconductor layer; a second type semiconductor layer provided on the active layer; and A first electrode provided on the second type semiconductor layer; and a second electrode connected from the lower surface of the display substrate to the first type semiconductor layer; a first wiring connected to the first electrode; and A second wiring is connected to the second electrode. 2 . The display device according to claim 1 , wherein two or more micro semiconductor chips are provided in each of the plurality of grooves. 3 . The display device according to claim 1 , wherein the display substrate further comprises a via hole through which the micro semiconductor chip is exposed, and the second electrode is provided in the via hole. 4 . The display device according to claim 1 , further comprising a reflective layer provided on a side wall of each of the plurality of grooves. The display device according to claim 1 , wherein the first wiring faces away from the second electrode.

6. The display device according to claim 1, wherein: In a case where the micro semiconductor chip is omitted from one of the plurality of grooves, the first wiring is configured not to contact the second electrode.

7. The display device according to claim 1, wherein: The first wiring has a shape including a concave portion in a plan view, and the second electrode is provided in the concave portion. 8 . The display device according to claim 1 , wherein the first wiring and the second electrode are positioned in parallel in a plan view.

9. The display device according to claim 1, further comprising an insulating layer, the insulating layer being on the array layer, The maximum thickness of the insulating layer is greater than the thickness of the array layer. 10 . The display device according to claim 1 , further comprising a color conversion layer provided on the array layer and configured to convert a color of light emitted from the micro semiconductor chip.

11. A method for manufacturing a display device, the display device comprising a micro-semiconductor chip, the micro-semiconductor chip comprising a first type semiconductor layer, an active layer provided on the first type semiconductor layer, a second type semiconductor layer provided on the active layer, and a first electrode provided on the second type semiconductor layer, the method comprising: forming an array layer on a display substrate including a driving circuit; forming a plurality of grooves in the array layer; transferring the micro semiconductor chip to one of the plurality of recesses so that the first electrode is located in an upper portion of the one of the plurality of recesses; exposing the first type semiconductor layer of the micro semiconductor chip by forming a via hole in the display substrate from a lower surface of the display substrate; forming a second electrode in the via hole and connecting the second electrode to the first type semiconductor layer; as well as A first wiring is connected to the first electrode, and a second wiring is connected to the second electrode. 12 . The method according to claim 11 , wherein two or more micro semiconductor chips are provided in each of the plurality of recesses.

13. The method according to claim 11, wherein the micro semiconductor chip is transferred by using a wet self-alignment method. 14 . The method of claim 11 , further comprising forming a reflective layer on a sidewall of each of the plurality of grooves. The method according to claim 11 , wherein the first wiring does not overlap with the second electrode.

16. The method according to claim 11, wherein: In a case where the micro semiconductor chip is omitted from the one of the plurality of grooves, the first wiring is configured not to contact the second electrode.

17. The method according to claim 11, wherein: In a plan view, the first wiring has a shape including a concave portion, and the second electrode is in the concave portion.

18. The method according to claim 11, wherein the first wiring and the second electrode are positioned in parallel in a plan view.

19. The method according to claim 11, further comprising forming an insulating layer on the array layer, The maximum thickness of the insulating layer is greater than the thickness of the array layer.

20. The method of claim 11, further comprising forming a color conversion layer on the array layer, the color conversion layer configured to convert a color of light emitted from the micro semiconductor chip.

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