Display device, preparation method of display device and electronic equipment

Abstract

The invention provides a display device, a preparation method of the display device and electronic equipment, and the display device comprises a substrate which is arranged at one side of a light sensing element; the driving structure layer is arranged on the side, away from the light sensing element, of the substrate; the planarization layer is provided with a first light hole and is arranged on one side, deviating from the substrate, of the driving structure layer; the display layer is provided with a second light hole and is arranged on the side, away from the driving structure layer, of the planarization layer; the packaging layer is arranged on the side, away from the planarization layer, of the display layer; the color film layer is provided with a third light hole and is arranged on one side, deviating from the display layer, of the packaging layer; the orthographic projection of the third light-transmitting hole on the substrate, the orthographic projection of the second light-transmitting hole on the substrate, the orthographic projection of the first light-transmitting hole on the substrate and the orthographic projection of the photosensitive element on the substrate are at least partially overlapped. Therefore, the light can be better incident to the light sensing element, and the light transmittance is improved. And the light is not reflected too much, so that the reflectivity difference between the light sensing area and the display area is reduced.

Description

Technical Field

[0001] The present application relates to the field of electronic technology, and in particular to a display device, a method for preparing a display device, and an electronic device. Background Art

[0002] Organic Light Emitting Diode (OLED) is an active light-emitting display device with the advantages of self-luminescence, wide viewing angle, high contrast, low power consumption, and extremely high response speed. With the continuous development of display technology, OLED technology is increasingly used in flexible display devices.

[0003] Among them, electronic devices have put forward higher and higher demands for reducing the power consumption of the screen. In order to reduce the power consumption of the screen, the color filter on encapsulation (COE) technology came into being. COE technology can prepare a color filter on the encapsulation layer, wherein the COE technology uses a black matrix (BM) and a color filter (CF) as a reflection reduction layer to reduce the reflection of the reflective metal to the external ambient light. However, current electronic devices generally need to use photosensitive elements, which are usually located under the screen, such as light-sensitive elements that are ambient light sensors or fingerprint recognition sensors. However, due to the obstruction of the black matrix, COE technology causes no light to pass through the screen or the light transmittance is low, and the light cannot be well transmitted to the photosensitive element.

[0004] In the related art, holes are generally opened on the BM and the electrodes of the OLED to improve the light transmittance of the OLED based on the COE technology. However, opening holes on the BM and the electrodes of the OLED causes a difference in the reflectivity of the OLED in the opening area (the area where the light sensing element is located) and the reflectivity of the normal display area, resulting in a problem of poor overall visual effect. Summary of the invention

[0005] The embodiments of the present application provide a display device, a method for manufacturing a display device, and an electronic device, which can improve the light transmittance and overall visual effect of the display device.

[0006] In a first aspect, an embodiment of the present application provides a display device, including:

[0007] A substrate, used to be arranged on one side of the light sensing element;

[0008] A driving structure layer is arranged on a side of the substrate away from the light sensing element;

[0009] A planarization layer is arranged on a side of the driving structure layer away from the substrate, the planarization layer is provided with a first light-transmitting hole, and an orthographic projection of the first light-transmitting hole on the substrate at least partially overlaps with an orthographic projection of the light-sensing element on the substrate;

[0010] A display layer is arranged on a side of the planarization layer away from the driving structure layer, the display layer is provided with a second light-transmitting hole, and the orthographic projection of the second light-transmitting hole on the substrate at least partially overlaps with the orthographic projection of the first light-transmitting hole on the substrate and the orthographic projection of the light-sensing element on the substrate;

[0011] an encapsulation layer, disposed on a side of the display layer away from the planarization layer; and

[0012] The color filter layer is arranged on the side of the encapsulation layer away from the display layer, and the color filter layer is provided with a third light-transmitting hole, and the orthographic projection of the third light-transmitting hole on the substrate at least partially overlaps with the orthographic projection of the second light-transmitting hole on the substrate, the orthographic projection of the first light-transmitting hole on the substrate, and the orthographic projection of the photosensitive element on the substrate.

[0013] In a second aspect, an embodiment of the present application further provides a method for preparing a display device, comprising:

[0014] forming a driving structure layer on the substrate;

[0015] Forming a planarization layer on one side of the driving structure layer, wherein the planarization layer is provided with a first light-transmitting hole;

[0016] forming a display layer on a side of the planarization layer facing away from the substrate, the display layer being provided with a second light-transmitting hole, the orthographic projection of the second light-transmitting hole on the substrate at least partially overlapping with the orthographic projection of the first light-transmitting hole on the substrate;

[0017] forming an encapsulation layer on a side of the display layer away from the planarization layer;

[0018] A color filter layer is formed on a side of the encapsulation layer away from the display layer, and the color filter layer is provided with a third light-transmitting hole, and the orthographic projection of the third light-transmitting hole on the substrate at least partially overlaps with the orthographic projection of the second light-transmitting hole on the substrate and the orthographic projection of the first light-transmitting hole on the substrate.

[0019] In a third aspect, an embodiment of the present application further provides an electronic device, comprising a light sensing element and the display device as described above, wherein the light sensing element is disposed on one side of the display device.

[0020] In the embodiment of the present application, a third light-transmitting hole is provided in the color film layer, a second light-transmitting hole is provided in the display layer, and a first light-transmitting hole is provided in the planarization layer, and the orthographic projection of the third light-transmitting hole on the substrate, the orthographic projection of the second light-transmitting hole on the substrate, the orthographic projection of the first light-transmitting hole on the substrate, and the orthographic projection of the photosensitive element on the substrate at least partially overlap, so that light can be better incident on the photosensitive element through the third light-transmitting hole, the second light-transmitting hole, and the first light-transmitting hole, thereby improving the transmittance of the display device and increasing the light sensitivity. In addition, since the first light-transmitting hole is provided in the planarization layer, light can be directly incident from the first light-transmitting hole of the planarization layer, so that the light will not be excessively reflected by the planarization layer, such as not being reflected by the source-drain metal layer in the planarization layer, so that the reflectivity difference between the photosensitive area where the photosensitive element is provided and the display area of ​​the display device can be effectively reduced, so as to improve the overall visual effect of the display device and the consistency of the appearance display effect of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for describing the embodiments are briefly introduced below.

[0022] Figure 1 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0023] Figure 2 for Figure 1 A first partial cross-sectional view of the electronic device shown at a light sensing area.

[0024] Figure 3 This is a transmittance simulation curve diagram of the display device provided in an embodiment of the present application at the light-sensitive area.

[0025] Figure 4 A reflectivity simulation curve diagram of the display device provided in an embodiment of the present application at the light-sensitive area.

[0026] Figure 5 for Figure 1 A second partial cross-sectional view of the electronic device shown at the light sensing area.

[0027] Figure 6 for Figure 1 A partial cross-sectional view of the display area of ​​the electronic device shown.

[0028] Figure 7 This is a schematic diagram of the structure in which a compensation electrical layer is provided in the non-display area in an embodiment of the present application.

[0029] Figure 8 for Figure 1 A third partial cross-sectional view of the electronic device shown at the light sensing area.

[0030] Fig. 9 A flow chart of a method for preparing a display device provided in an embodiment of the present application.

[0031] Fig.10 for Figure 1 A fourth partial cross-sectional view of the electronic device shown at the light sensing area. DETAILED DESCRIPTION

[0032] The present application provides a display device, a method for manufacturing a display device, and an electronic device, wherein Figure 1 and Figure 2 , Figure 1 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application, Figure 2 for Figure 1 A first partial cross-sectional view of the electronic device at the photosensitive area shown. The electronic device 100 may include a display device 10 and a photosensitive element 20. The photosensitive element 20 is disposed on one side of the display device 10. The photosensitive element 20 may be one or both of an ambient light sensor and a fingerprint recognition sensor. Exemplarily, when the photosensitive element 20 is an ambient light sensor and a fingerprint recognition sensor, the ambient light sensor and the fingerprint recognition sensor may be installed below the display device 10, and light may pass through the display device 10 to be incident on the ambient light sensor and the fingerprint recognition sensor. It is understandable that the ambient light sensor and the fingerprint recognition sensor may be disposed at different positions of the display device 10. The technical scheme in the embodiment of the present application will be clearly and completely described below in conjunction with the drawings in the embodiment of the present application.

[0033] Please continue reading Figure 1 , the electronic device 100 may be a computing device such as a laptop computer, a computer monitor including an embedded computer, a tablet computer, a cellular phone, a media player, or other handheld or portable electronic device 100, a smaller device (such as a wristwatch device, a pendant device, a headset or earpiece device, a device embedded in glasses or other devices worn on the user's head, or other wearable or miniature devices), a television, a computer display that does not include an embedded computer, a gaming device, a navigation device, an embedded system (such as a system in which the electronic device 100 with a display is installed in an information kiosk or a car), a device that implements the functionality of two or more of these devices, or other electronic devices 100. Figure 1 In the exemplary configuration of FIG. 1 , the electronic device 100 is a portable device such as a cellular phone, a media player, a tablet computer, or other portable computing device. Other configurations may be used for the electronic device 100 if desired. Figure 1 This is exemplary only.

[0034] It can be understood that the electronic device 100 includes components such as a housing 30 , a display device 10 , a light sensing element 20 , a mainboard, and a battery.

[0035] The display device 10 is disposed on the housing 30, and the display device 10 can display images. The display device 10 can be an organic light-emitting diode display device (OLED). The display surface of the display device 10 can have a larger display area A and a narrower non-display area B, or the display device 10 has a narrower black border. It can be understood that the display device 10 is also divided into a light sensing area C, and the light sensing area C covers the light sensing element 20, such as Figure 1 As shown, the light sensing area C is located in the display area A. For example, when the light sensing element 20 includes an ambient light sensor and a fingerprint recognition sensor and the two are arranged at different positions, the light sensing area C is divided into two parts, one part of the light sensing area C covers the ambient light sensor, and the other part of the light sensing area C covers the fingerprint recognition sensor. Figure 1 Taking the viewing angle in as a reference, the photosensitive area C located above covers the ambient light sensor located above, and the photosensitive area C located below covers the fingerprint recognition sensor located below. In other words, the photosensitive area C located above is the ambient light sensor area, and the photosensitive area C located below is the fingerprint recognition sensor area. Among them, the fingerprint recognition sensor can be a charge coupled device (CCD) image sensor, a complementary metal oxide semiconductor (CMOS) image sensor, or a PIN (Positive Intrinsic Negative) type photoelectric sensor prepared by an amorphous silicon process, etc., and this application does not limit this.

[0036] It can also be understood that the light sensing element 20 is not limited to an ambient light sensor and a fingerprint recognition sensor, but can also be a proximity sensor, a light sensor, a distance measurement sensor, etc.

[0037] A display device cover layer such as a transparent glass layer, light-transmitting plastic, sapphire, or other transparent dielectric layers may be used to protect the display device 10 .

[0038] The display device 10 may be in a regular shape, such as a rectangle, a rounded rectangle or a circle. Of course, in some other possible embodiments, the display device 10 may also be in an irregular shape, which is not limited in the present embodiment.

[0039] The housing 30 is used to form the outer contour of the electronic device 100, so as to accommodate the electronic devices, functional components, etc. of the electronic device 100, and to seal and protect the electronic devices and functional components inside the electronic device 100. For example, the electronic devices and functional components such as the battery, mainboard, and sensor of the electronic device 100 can be arranged inside the housing 30. The housing 30 can be formed by plastic, glass, ceramic, fiber composite material, metal (e.g., stainless steel, aluminum, etc.), other suitable materials, or any combination of two or more of these materials. The housing 30 can be formed using an integrated configuration, in which some or all of the housing 30 are processed or molded into a single structure, or can be formed using multiple structures (e.g., an inner frame structure, one or more structures forming an outer shell surface, etc.). The housing 30 can be provided with a storage cavity to accommodate devices such as batteries, mainboards, etc. of the electronic device 100. The housing 30 can also carry the display device 10.

[0040] It is also understood that the housing 30 may include a middle frame and a back cover. The middle frame may be a thin plate or sheet-like structure, or a hollow frame structure. The middle frame is used to provide support for the electronic devices or functional components in the electronic device 100, so as to install the electronic devices and functional components of the electronic device 100 together. For example, grooves, protrusions and other structures may be provided on the middle frame to facilitate the installation of the electronic devices or functional components of the electronic device 100. It is understandable that the material of the middle frame may include metal or plastic.

[0041] The back cover is used to seal the electronic devices and functional components of the electronic device 100 together with the middle frame and the touch screen inside the electronic device 100 to protect the electronic devices and functional components of the electronic device 100. It can be understood that the material of the back cover can also include metal or plastic.

[0042] The mainboard is disposed inside the housing 30. For example, the mainboard can be mounted on the middle frame of the housing 30 for fixing, and the mainboard can be sealed inside the electronic device 100 by the back cover. Among them, one or more functional components such as a processor, an earphone jack, an acceleration sensor, a gyroscope, and a motor can be integrated on the mainboard. At the same time, the display device 10 can be electrically connected to the mainboard to control the display and touch operation of the display device 10 through the processor on the mainboard.

[0043] The above is an introduction to the overall structure of the electronic device 100. In order to more clearly illustrate the specific structure of the display device 10, the specific structure of the display device 10 and its related components will be specifically described below in conjunction with the accompanying drawings.

[0044] See also Figure 2 Combined with Figure 1 , Figure 2 for Figure 1The first partial cross-sectional view of the electronic device shown in the photosensitive area. The display device 10 may include a substrate 11, a driving structure layer 12, a planarization layer 13, a display layer 14, an encapsulation layer 15 and a color filter layer 16. It can be understood that the substrate 11 is located on one side of the photosensitive element 20. In the embodiment of the present application, the light receiving part of the photosensitive element 20 of the electronic device 100 may be directed toward the substrate 11 of the display device 10, and the photosensitive element 20 is arranged corresponding to the photosensitive area C, or the photosensitive element 20 is located below the substrate 11 at the position of the photosensitive area C. The photosensitive element 20 can obtain external light signals passing through the photosensitive area C. In the embodiment of the present application, the photosensitive element 20 and the substrate 11 may be spaced apart. Of course, in order to reduce the space of the electronic device 100 occupied by the photosensitive element 20, the photosensitive element 20 may be close to or adjacent to the substrate 11 of the display device 10.

[0045] The driving structure layer 12 is arranged on the side of the substrate 11 away from the photosensitive element 20, the planarization layer 13 is arranged on the side of the driving structure layer 12 away from the substrate 11, the display layer 14 is arranged on the side of the planarization layer 13 away from the driving structure layer 12, and the encapsulation layer 15 is arranged on the side of the display layer 14 away from the planarization layer 13, wherein the encapsulation layer 15 can adopt an inorganic material, an organic material, and an inorganic material laminated structure, and the organic material layer is arranged between two inorganic material layers. The color filter layer 16 is arranged on the side of the encapsulation layer 15 away from the display layer 14.

[0046] It should be noted that in order to reduce the power consumption of the screen, the COE (Color filter on Encapsulation) technology can be used to prepare a color filter on the encapsulation layer, that is, the color filter layer 16. The COE technology uses a black matrix (BM) and a color filter (CF) as a reflection reduction layer to reduce the reflection of the reflective metal to the external ambient light. That is, the black matrix (BM) and the color filter (CF) form the above-mentioned color filter layer 16. For example, Figure 2 As shown, the color filter layer 16 includes a black matrix layer 161 and filter layers 162 of different colors. The black matrix layer 161 and the filter layers 162 are both arranged on the encapsulation layer 15. The filter layers 162 of different colors are arranged at intervals. The black matrix layer 161 is arranged between the filter layers 162 to separate the filter layers 162 of different colors.

[0047] However, current electronic devices generally require light sensing elements, which are usually located under the screen, such as ambient light sensors or fingerprint sensors. However, due to the obstruction of the black matrix layer, the COE technology does not transmit light through the screen or the light transmittance is low, and the light cannot be well transmitted to the light sensing element 20.

[0048] In the related art, holes are generally opened on the BM and the electrodes of the OLED to improve the light transmittance of the OLED based on the COE technology. However, opening holes on the BM and the electrodes of the OLED causes a difference in the reflectivity of the OLED in the opening area (the area where the light sensing element is located) and the reflectivity of the normal display area, resulting in a problem of poor overall visual effect.

[0049] Based on this, please continue to refer to Figure 2 In the present application, a first light-transmitting hole 131 is provided in the planarization layer 13, and the orthographic projection of the first light-transmitting hole 131 on the substrate 11 at least partially overlaps with the orthographic projection of the photosensitive element 20 on the substrate 11. A second light-transmitting hole 141 is provided in the display layer 14, and the orthographic projection of the second light-transmitting hole 141 on the substrate 11 at least partially overlaps with the orthographic projection of the first light-transmitting hole 131 on the substrate 11 and the orthographic projection of the photosensitive element 20 on the substrate 11. A third light-transmitting hole 163 is provided in the color filter layer 16, for example, the third light-transmitting hole 163 is provided in the black matrix layer 161 of the color filter layer 16, wherein the third light-transmitting hole 163 can be formed on the black matrix layer 161 by conventional masking, exposure, development, and etching processes. The orthographic projection of the third light-transmitting hole 163 on the substrate 11 at least partially overlaps with the orthographic projection of the second light-transmitting hole 141 on the substrate 11, the orthographic projection of the first light-transmitting hole 131 on the substrate 11, and the orthographic projection of the light-sensing element 20 on the substrate 11. It can be understood that the orthographic projection of the third light-transmitting hole 163 on the substrate 11, the orthographic projection of the second light-transmitting hole 141 on the substrate 11, the orthographic projection of the first light-transmitting hole 131 on the substrate 11, and the orthographic projection of the light-sensing element 20 on the substrate 11 are at least partially overlapped, and the first light-transmitting hole 131, the second light-transmitting hole 141, and the third light-transmitting hole 163 are all located in the light-sensing area C, so that light can be better incident on the light-sensing element 20 through the third light-transmitting hole 163, the second light-transmitting hole 141, and the first light-transmitting hole 131, thereby improving the transmittance of the display device 10 and increasing the light sensitivity. In addition, since the first light-transmitting hole 131 is provided in the planarization layer 13, light can be directly incident from the first light-transmitting hole 131 of the planarization layer 13. In this way, the light will not be excessively reflected by the planarization layer 13, such as will not be reflected by the source-drain metal layer 1274 in the planarization layer 13, thereby effectively reducing the reflectivity difference between the photosensitive area C where the photosensitive element 20 is provided and the display area A of the display device 10, so as to improve the overall visual effect of the display device 10 and the consistency of the appearance display effect of the display device 10.

[0050] It should also be noted that the driving structure layer 12 is a multi-layer film structure. As the thickness of the film layer increases, the optical film will be more likely to have interference enhancement or interference reduction effects due to interference, resulting in more peaks and troughs, making it difficult for the multi-layer film to perform optical modulation. Therefore, when the display device 10 opens holes in the color filter layer 16, the display layer 14 and the planarization layer 13 in the photosensitive area C, it is easy to cause more reflection of light on the driving structure layer 12, resulting in a difference in the reflectivity of the display device 10 in the opening area (the area where the photosensitive element 20 is located) and the reflectivity of the normal display area A, resulting in the problem of poor overall visual effect.

[0051] Based on this, the embodiment of the present application is provided with a fourth light-transmitting hole 121 in the driving structure layer 12, and the orthographic projection of the fourth light-transmitting hole 121 on the substrate 11 at least partially overlaps with the orthographic projection of the first light-transmitting hole 131 on the substrate 11 and the orthographic projection of the light-sensing element 20 on the substrate 11. It can be understood that the first light-transmitting hole 131, the second light-transmitting hole 141, the third light-transmitting hole 163 and the fourth light-transmitting hole 121 are all located in the light-sensing area C, so that light can be better incident on the light-sensing element 20 through the third light-transmitting hole 163, the second light-transmitting hole 141, the first light-transmitting hole 131 and the fourth light-transmitting hole 121, thereby improving the transmittance of the display device 10 and increasing the light sensitivity. Furthermore, since the fourth light-transmitting hole 121 is provided in the driving structure layer 12, light can directly pass through the driving structure layer 12 from the fourth light-transmitting hole 121. In this way, it is possible to avoid the light from being irradiated on the driving structure layer 12 and causing more reflections on the driving structure layer 12. That is, the fourth light-transmitting hole 121 is provided in the driving structure layer 12, which not only increases the transmittance of the display device 10, but also reduces the reflectivity of the light on the driving structure layer 12. Thus, the reflectivity difference between the photosensitive area C where the photosensitive element 20 is provided and the display area A of the display device 10 can be effectively reduced, so as to improve the overall visual effect of the display device 10 and the consistency of the appearance display effect of the display device 10.

[0052] It can be understood that the present application provides a third light-transmitting hole 163 in the color film layer 16, a second light-transmitting hole 141 in the display layer 14, a first light-transmitting hole 131 in the planarization layer 13, and a fourth light-transmitting hole 121 in the driving structure layer 12, so that light can be better incident on the photosensitive element 20 through the third light-transmitting hole 163, the second light-transmitting hole 141, the first light-transmitting hole 131 and the fourth light-transmitting hole 121, thereby improving the light transmittance of the photosensitive area C and reducing the reflectivity difference between the photosensitive area C and the display area A.

[0053] See also Figure 3 and Figure 4 , Figure 3 This is a transmittance simulation curve diagram of the display device provided in the embodiment of the present application at the light-sensitive area, Figure 4The reflectivity simulation curve of the display device provided in the embodiment of the present application at the light-sensitive area. The M curve represents the simulation result before the light-transmitting hole is set, and the N curve represents the simulation result after the third light-transmitting hole 163, the second light-transmitting hole 141, the first light-transmitting hole 131 and the fourth light-transmitting hole 121 are set. Figure 3 and Figure 4 It can be seen that after providing the third light hole 163, the second light hole 141, the first light hole 131 and the fourth light hole 121, the overall transmittance at the light sensing area C of the display device 10 can be increased from 37% to 40%, and the reflectivity can be reduced from 45% to 40%.

[0054] The driving structure layer 12 may include a buffer layer 122 , a first gate insulating layer 123 , a first interlayer insulating layer 124 , a second gate insulating layer 125 , and a second interlayer insulating layer 126 which are sequentially stacked on the substrate 11 .

[0055] It can also be understood that in order to increase the adhesion between the buffer layer 122 and the substrate 11, please refer to Figure 5 , Figure 5 for Figure 1 A second partial cross-sectional view of the electronic device at the light-sensitive area is shown. A SiO layer 17 may be provided between the substrate 11 and the buffer layer 122. It is understood that the SiO layer 17 may also play a role in isolating water and oxygen. It is also understood that the fourth light-transmitting hole 121 may also penetrate the SiO layer 17.

[0056] The substrate 11 may be made of polyimide (PI), and a buffer layer may be formed by deposition to improve the water and oxygen resistance of the substrate 11 .

[0057] The first gate insulating layer 123 (GI1 layer) is disposed on the side of the buffer layer 122 facing away from the substrate 11. For example, the first gate insulating layer 123 (GI1 layer) can be formed on the buffer layer by deposition.

[0058] The first interlayer insulating layer 124 (ILD1 layer) is disposed on the side of the first gate insulating layer 123 (GI1 layer) away from the buffer layer 122. For example, the first interlayer insulating layer 124 (ILD1 layer) can be formed on the side of the first gate insulating layer 123 (GI1 layer) away from the buffer layer 122 by deposition.

[0059] The second gate insulating layer 125 (GI2 layer) is disposed on the side of the first interlayer insulating layer 124 (ILD1 layer) away from the first gate insulating layer 123 (GI1 layer). For example, the second gate insulating layer 125 (GI2 layer) can be formed on the side of the first interlayer insulating layer 124 (ILD1 layer) away from the first gate insulating layer 123 (GI1 layer) by deposition.

[0060] The second interlayer insulating layer 126 (ILD2 layer) is disposed on the side of the second gate insulating layer 125 (GI2 layer) away from the first interlayer insulating layer 124 (ILD1 layer). For example, the second interlayer insulating layer 126 (ILD2 layer) can be formed on the side of the second gate insulating layer 125 (GI2 layer) away from the first interlayer insulating layer 124 (ILD1 layer) by deposition.

[0061] It can be understood that the planarization layer 13 or the PLN layer is disposed on a side of the second interlayer insulating layer 126 (ILD2 layer) away from the second gate insulating layer 125 (GI2 layer).

[0062] The fourth light-transmitting hole 121 penetrates at least one of the buffer layer 122 , the first gate insulating layer 123 (GI1 layer), the first interlayer insulating layer 124 (ILD1 layer), the second gate insulating layer 125 (GI2 layer) and the second interlayer insulating layer 126 (ILD2 layer).

[0063] It can be understood that the fourth light-transmitting hole 121 can only penetrate one of the buffer layer 122, the first gate insulating layer 123 (GI1 layer), the first interlayer insulating layer 124 (ILD1 layer), the second gate insulating layer 125 (GI2 layer) and the second interlayer insulating layer 126 (ILD2 layer). For example, the fourth light-transmitting hole 121 is only provided in the buffer layer 122, or the fourth light-transmitting hole 121 is only provided in the first gate insulating layer 123 (GI1 layer), or the fourth light-transmitting hole 121 is only provided in the first interlayer insulating layer 124 (ILD1 layer), or the fourth light-transmitting hole 121 is only provided in the second gate insulating layer 125 (GI2 layer), or the fourth light-transmitting hole 121 is only provided in the second interlayer insulating layer 126 (ILD2 layer).

[0064] It can be understood that the fourth light-transmitting hole 121 can also only penetrate any two layers among the buffer layer 122, the first gate insulating layer 123 (GI1 layer), the first interlayer insulating layer 124 (ILD1 layer), the second gate insulating layer 125 (GI2 layer) and the second interlayer insulating layer 126 (ILD2 layer). That is, the fourth light-transmitting hole 121 is provided in any two layers among the buffer layer 122, the first gate insulating layer 123 (GI1 layer), the first interlayer insulating layer 124 (ILD1 layer), the second gate insulating layer 125 (GI2 layer) and the second interlayer insulating layer 126 (ILD2 layer).

[0065] It can be understood that the fourth light-transmitting hole 121 can also only penetrate any three layers of the buffer layer 122, the first gate insulating layer 123 (GI1 layer), the first interlayer insulating layer 124 (ILD1 layer), the second gate insulating layer 125 (GI2 layer) and the second interlayer insulating layer 126 (ILD2 layer). That is, the fourth light-transmitting hole 121 is set in any three layers of the buffer layer 122, the first gate insulating layer 123 (GI1 layer), the first interlayer insulating layer 124 (ILD1 layer), the second gate insulating layer 125 (GI2 layer) and the second interlayer insulating layer 126 (ILD2 layer).

[0066] Preferably, if Figure 2 As shown, the fourth light-transmitting hole 121 sequentially penetrates the buffer layer 122, the first gate insulating layer 123 (GI1 layer), the first interlayer insulating layer 124 (ILD1 layer), the second gate insulating layer 125 (GI2 layer) and the second interlayer insulating layer 126 (ILD2 layer). That is, the fourth light-transmitting hole 121 penetrates the entire driving structure layer 12 in the thickness direction of the driving structure layer 12. In this way, it can be effectively avoided that the light is irradiated on the driving structure layer 12 and more reflections occur on the driving structure layer 12, which not only increases the transmittance of the display device 10, but also reduces the reflectivity of the light on the driving structure layer 12, so that the reflectivity difference between the light sensing area C where the light sensing element 20 is provided and the display area A of the display device 10 can be effectively reduced, so as to improve the overall visual effect of the display device 10 and the consistency of the appearance display effect of the display device 10.

[0067] It can also be understood that since the buffer layer 122, the first gate insulating layer 123 (GI1 layer), the first interlayer insulating layer 124 (ILD1 layer), the second gate insulating layer 125 (GI2 layer) and the second interlayer insulating layer 126 (ILD2 layer) in the driving structure layer 12 are SiN film layers and SiO film layers, there are SiN and SiO interfaces. The inventors have found through research that the SiN and SiO interfaces have a strong interference effect on light. For example, the ILD layer is a combination of SiN and SiO film layers. Therefore, if the thickness of these film layers is not set properly, strong interference enhancement will occur, resulting in increased reflectivity and a significant decrease in transmittance. Therefore, the present application increases the transmittance of light in the driving structure layer 12 and reduces the reflectivity of light on the driving structure layer 12 by setting a fourth light-transmitting hole 121 in the driving structure layer 12, so that the reflectivity difference between the photosensitive area C where the photosensitive element 20 is set and the display area A of the display device 10 can be effectively reduced, so as to improve the overall visual effect of the display device 10 and the consistency of the appearance display effect of the display device 10.

[0068] The fourth light-transmitting hole 121 can be formed on the driving structure layer 12 by conventional masking, exposure, development and etching processes. Preferably, the fourth light-transmitting hole 121 can be formed by dry etching process, and the fourth light-transmitting hole 121 formed in this way has higher precision.

[0069] It is also understandable that please continue to refer to Figure 2 The driving structure layer 12 further includes a thin film transistor 127 (Thin Film Transistor, TFT). The thin film transistor 127 includes an active layer 1271, a first gate electrode layer 1272, a second gate electrode layer 1273 and a source-drain metal layer 1274. The active layer 1271 is disposed on the buffer layer and covered by the first gate insulating layer 123 (GI1 layer).

[0070] The first gate electrode layer 1272 is arranged on the first gate insulation layer 123 (GI1 layer) and covered by the first interlayer insulation layer 124 (ILD1 layer), wherein the first gate electrode layer 1272 includes at least a first gate electrode GT, a first capacitor electrode GT1, multiple gate lines (not shown) and multiple gate leads (not shown).

[0071] The second gate electrode layer 1273 is arranged on the second gate insulation layer 125 (GI2 layer) and covered by the second interlayer insulation layer 126 (ILD2 layer), wherein the second gate electrode layer 1273 includes at least a second capacitor electrode GT2 and a second gate lead (not shown), and the position of the second capacitor electrode GT2 corresponds to the position of the first capacitor electrode GT1, and the second capacitor electrode GT2 and the first capacitor electrode GT1 form a storage capacitor.

[0072] The source-drain metal layer 1274 is disposed on the second interlayer insulating layer 126 (ILD2 layer) and covered by the planarization layer 13 (PLN layer), wherein the source-drain metal layer 1274 at least includes a first source electrode S, a first drain electrode D, a low voltage (VSS) line (not shown), a plurality of data lines (not shown) and a plurality of data lead lines (not shown) patterns, and the first source electrode S and the first drain electrode D are respectively connected to the active layer 1271 through the first via hole 192. The first drain electrode D is connected to the electrode layer in the display layer 14 through the second via hole 191.

[0073] It can be understood that the thin film transistor 127 can be disposed in the driving structure layer 12 of the display area A, and can also be disposed in the driving structure layer 12 of the photosensitive area C.

[0074] It should also be noted that the SIN film layer in the ILD layer (i.e., the first interlayer insulating layer 124 (ILD1 layer), the second interlayer insulating layer 126 (ILD2 layer)) has a high hydrogen content when formed at a low temperature, and since the ILD layer is opened by dry etching in the photosensitive region C (the fourth light-transmitting hole 121), the Si lattice of the SIN film layer in the ILD layer is missing. Therefore, the Si lattice missing of the SIN film layer in the ILD layer caused by dry etching can be compensated by annealing to replenish hydrogen. At this time, due to the influence of annealing to replenish hydrogen, if only the ILD layer in the photosensitive region C is opened, the photosensitive region C will be different from the display region A, resulting in changes in the electrical properties of the thin film transistor device (TFT) in the photosensitive region C.

[0075] Based on this, in order to ensure the electrical uniformity of the thin film transistor device (TFT) in the photosensitive area C and the display area A, in the embodiment of the present application, please refer to Figure 6 Combined with Figure 5 , Figure 6 for Figure 1 A partial cross-sectional view of the electronic device at the display area A. The ILD layer (i.e., the first interlayer insulating layer 124 (ILD1 layer) and the second interlayer insulating layer 126 (ILD2 layer)) of the display area A is also designed with holes. Exemplarily, when the fourth light-transmitting hole 121 penetrates at least one of the first interlayer insulating layer 124 (ILD1 layer) and the second interlayer insulating layer 126 (ILD2 layer), at least one of the first interlayer insulating layer 124 (ILD1 layer) and the second interlayer insulating layer 126 (ILD2 layer) is also provided with a hollow hole 128, and the hollow hole is located in the display area A, that is, the first interlayer insulating layer 124 (ILD1) and / or the second interlayer insulating layer 126 (ILD2) within the range of the display area A are also provided with a hollow hole 128. Thereby, the electrical uniformity of the thin film transistor device (TFT) of the photosensitive area C and the display area A can be ensured.

[0076] Among them, the area of ​​the hollow hole 128 is equal to the area of ​​the fourth light-transmitting hole 121, so as to better ensure the electrical uniformity of the thin film transistor device (TFT) of the photosensitive area C and the display area A. Among them, the shape of the fourth light-transmitting hole 121 can be a regular shape such as a circle, a rectangle, a square, or an irregular shape. Exemplarily, when the fourth light-transmitting hole 121 is a circle, the value range of its radius can be between 5 microns and 15 microns. For example, the radius of the fourth light-transmitting hole 121 can be 5 microns, 7 microns, 9 microns, 12 microns or 15 microns. The shape of the hollow hole 128 can be the same as that of the fourth light-transmitting hole 121, or it can be different, as long as the area of ​​the hollow hole 128 and the area of ​​the fourth light-transmitting hole 121 can be equal. It can be understood that the equality in the embodiment of the present application is not strictly required to be equal, as long as it is roughly equal to ensure the electrical uniformity of the thin film transistor 127 device (TFT) of the photosensitive area C and the display area A.

[0077] It should also be noted that since the photosensitive area C and the display area A have holes dug in the ILD layer (i.e., the first interlayer insulating layer 124 (ILD1 layer) and the second interlayer insulating layer 126 (ILD2 layer)), the electrical properties of the thin film transistor 127 device (TFT) are lost. Figure 7 , Figure 7 Schematic diagram of the structure of the compensation electrical layer in the non-display area of ​​the embodiment of the present application. In the embodiment of the present application, a compensation electrical layer 18 is also provided, such as a compensation electrical layer 18 is provided at the non-display area B of the display device 10, wherein the material of the compensation electrical layer 18 is the same as the material of the first interlayer insulating layer 124 to compensate for the electrical properties. It can be understood that multiple sets of dummy ILD layers (Dummy ILD) are provided at the non-display area B of the display device 10 to compensate for the electrical properties.

[0078] It can also be understood that the non-display area B of the display device 10 can also be referred to as the side, edge, etc. of the display device 10. The non-display area B is located at the edge of the display device 10, or the non-display area is located around the display area A of the display device 10. In some embodiments, Figure 7 As shown, the non-display area B is arranged around the periphery of the display area A. For example, in the related art, if the display device 10 is in the shape of a rectangular parallelepiped structure, the display area A is usually a rectangular area, and the non-display area B is arranged around the periphery of the display area A. At this time, the adjacent sides of the non-display area B form rounded corners, that is, the non-display area B forms a rounded corner area and a straight edge area. At this time, the compensation electrical layer 18 can be a rounded corner area or a straight edge area, or both the rounded corner area and the straight edge area can be provided with the compensation electrical layer 18. This application is not limited here.

[0079] Among them, the area of ​​the compensation electrical layer 18 is equal to the sum of the areas of the fourth light-transmitting hole 121 and the hollow hole 128. The shape of the compensation electrical layer 18 can be a regular shape such as a circle, a rectangle, a square, or an irregular shape. The shape of the compensation electrical layer 18 can be the same as the shape of the fourth light-transmitting hole 121, or it can be different, as long as the area of ​​the compensation electrical layer 18 is equal to the sum of the areas of the fourth light-transmitting hole 121 and the hollow hole 128. It can be understood that the equality in the embodiment of the present application is not strictly required to be equal, as long as it is roughly equal to ensure the effect of compensation electrical properties.

[0080] See also Figure 5 , the display layer 14 is provided with a second light-transmitting hole 141 for light to enter. It can be understood that the display layer 14 has a multi-layer structure. The display layer 14 includes a first electrode layer 142, an organic light-emitting layer 143 and a second electrode layer 144. The first electrode layer 142 is arranged on the side of the planarization layer 13 away from the driving structure layer 12, specifically, the first electrode layer 142 is arranged on the side of the planarization layer 13 away from the second interlayer insulating layer 126 (ILD2 layer). The organic light-emitting layer 143 is arranged on the side of the first electrode layer 142 away from the planarization layer 13, and the second electrode layer 144 is arranged on the side of the organic light-emitting layer 143 away from the first electrode layer 142.

[0081] It can be understood that the organic light-emitting layer 143 is connected to the first electrode layer 142. The first electrode layer 142 is connected to the first drain electrode D of the thin film transistor 127, thereby realizing the light emission control of the organic light-emitting layer 143. Among them, the second electrode layer 144 is connected to the organic light-emitting layer 143. It can also be understood that the organic light-emitting layer 143 includes a stacked hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer.

[0082] In the embodiment of the present application, the first electrode layer 142 can be the anode of the OLED or the cathode of the OLED. When the first electrode layer 142 is the anode of the OLED, the second electrode layer 144 is the cathode of the OLED. When the first electrode layer 142 is the cathode of the OLED, the second electrode layer 144 is the anode of the OLED.

[0083] Since the display layer 14 is provided with the second light-transmitting hole 141, the display layer 14 includes a multi-layer structure. It can be understood that the second light-transmitting hole 141 includes a first sub-light-transmitting hole 1411, a second sub-light-transmitting hole 1412 and a third sub-light-transmitting hole 1413 which are coaxially arranged, and the first electrode layer 142 is provided with the first sub-light-transmitting hole 1411. The organic light-emitting layer 143 is provided with the second sub-light-transmitting hole 1412. The second electrode layer 144 is provided with the third sub-light-transmitting hole 1413. In this way, the first sub-light-transmitting hole 1411, the second sub-light-transmitting hole 1412 and the third sub-light-transmitting hole 1413 which are coaxially arranged form the second light-transmitting hole 141, and it can also be understood that the second light-transmitting hole 141 passes through the first electrode layer 142, the organic light-emitting layer 143 and the second electrode layer 144.

[0084] In some embodiments, the second electrode layer 144 is made of a semi-transparent and semi-reflective metal, that is, the second electrode layer 144 can transmit light. Figure 8 , Figure 8 for Figure 1 The third partial cross-sectional view of the electronic device at the light sensing area is shown. The third light-transmitting sub-hole 1413 can also be a blind hole, that is, the second electrode layer 144 is not provided with a through hole but a blind hole. Since the second electrode itself can transmit light, it can transmit light even if it is set as a blind hole.

[0085] When the third light-transmitting sub-hole 1413 is a blind hole, the hole depth of the blind hole is 2 nanometers to 4 nanometers smaller than the maximum thickness of the second electrode layer 144. In this way, the light transmittance can be increased as much as possible and the light reflectance can be reduced.

[0086] Exemplarily, when the third light-transmitting sub-hole 1413 is a through hole, laser drilling may be used to form the third light-transmitting sub-hole 1413 on the second electrode layer 144 .

[0087] When the third light-transmitting sub-hole 1413 is a blind hole, the second electrode layer 144 having the third light-transmitting sub-hole 1413 (blind hole) can be formed by multiple evaporation with a common metal mask (Common Metal Mask, CMM). Specifically, first, the first second electrode layer 144 can be evaporated on the organic light-emitting layer 143, and then the CMM mask is covered to block the area where the third light-transmitting sub-hole 1413 is to be formed, and the other areas of the first second electrode layer 144 are exposed, and then the second electrode layer 144 is evaporated again. At this time, the thickness of the unblocked part becomes thicker, and the blocked part is not evaporated with the second electrode layer 144, so the thickness of the blocked part is thinner, and then the method is evaporated several times to obtain the second electrode layer 144 having the third light-transmitting sub-hole 1413 (blind hole).

[0088] Of course, in some embodiments, when the third light-transmitting sub-hole 1413 is a blind hole, the third light-transmitting sub-hole 1413 (blind hole) can also be formed on the second electrode layer 144 by laser drilling.

[0089] For example, the second sub-light-transmitting hole 1412 on the organic light-emitting layer 143 may be formed by conventional masking, exposure, development, and etching processes.

[0090] Please note that Figure 5 The first electrode layer 142 includes a pixel definition layer 1422 and an electrode body layer 1423. The pixel definition layer 1422 and the electrode body layer 1423 are both arranged on the planarization layer 13. The pixel definition layer 1422 is provided with a pixel opening area 1424, and the electrode body layer 1423 is located in the pixel opening area 1424. Among them, the pixel definition layer 1422 is a light-shielding material, so that the wires, components and other parts inside the display device 10 can be shielded. The first sub-light-transmitting hole 1411 is arranged on the pixel definition layer 1422. The first sub-light-transmitting hole 1411 on the pixel definition layer 1422 can be formed by conventional masking, exposure, development, and etching processes. It can be understood that the organic light-emitting layer 143 can cover the pixel definition layer 1422 and the electrode body layer 1423. Of course, in some other embodiments, the organic light-emitting layer 143 can also only cover the electrode body layer 1423.

[0091] Illustratively, the pattern of the electrode body layer 1423 can be deposited on the planarization layer 13, and the pixel definition layer 1422 can be coated on the planarization layer 13 so that the pixel definition layer 1422 covers the planarization layer 13 and the pattern of the electrode body layer 1423, and a pixel opening area 1424 is formed on the pixel definition layer 1422 through masking, exposure, development, and etching processes to expose the pattern of the electrode body layer 1423 so that the organic light-emitting layer 143 can be subsequently set on the electrode body layer 1423.

[0092] It can be understood that a third light-transmitting hole 163 is provided on the black matrix layer 161 (BM layer) of the color filter layer 16, and a first sub-light-transmitting hole 1411 is provided on the pixel definition layer 1422 of the first electrode layer 142, wherein the first sub-light-transmitting hole 1411 and the third light-transmitting hole 163 are coaxially arranged.

[0093] Since the optical density of the pixel definition layer 1422 is relatively low, when the thickness of the pixel definition layer 1422 is thinner than 1.5 microns, it is impossible to completely block the metal or components under the pixel definition layer 1422. In conventional design, due to the limited precision of the pixel definition layer 1422, the alignment is prone to offset, and some metal or components may not be blocked by the pixel definition layer 1422. The uncovered metal or components will cause the reflectivity of the photosensitive area to increase, resulting in a significant difference in reflectivity between the photosensitive area and the display area A, and poor reflective visual effects. Therefore, when designing the pixel definition layer 1422 and the black matrix layer 161, the size of the third light-transmitting hole 163 of the black matrix layer 161 must be smaller than the size of the first sub-light-transmitting hole 1411 of the pixel definition layer 1422 to ensure that the black matrix layer 161 can block the pixel definition layer 1422 as much as possible to avoid the uncovered metal or components causing the reflectivity of the photosensitive area to increase. The size of the third light-transmitting hole 163 is 0.3 micrometers to 2 micrometers smaller than the size of the first sub-light-transmitting hole 1411 of the pixel definition layer 1422. For example, the size of the third light-transmitting hole 163 is 0.3 micrometers, 0.5 micrometers, 0.8 micrometers, 1 micrometer, 1.5 micrometers or 2 micrometers smaller than the size of the first sub-light-transmitting hole 1411 of the pixel definition layer 1422.

[0094] On the other hand, an embodiment of the present application further provides a method for preparing a display device 10 , which is used to prepare the above-mentioned display device 10 .

[0095] See also Fig. 9 Combined with Figure 5 , Fig. 9 Flow chart of a method for manufacturing a display device provided in an embodiment of the present application. The method for manufacturing the display device 10 includes:

[0096] S10, forming a driving structure layer 12 on a substrate 11. The substrate 11 may be made of polyimide (PI).

[0097] It can be understood that forming the driving structure layer 12 on the substrate 11 may include:

[0098] S11, forming a buffer layer 122 on the substrate 11. In some embodiments, a SiO layer 17 may be formed on the substrate 11. It is understood that the SiO layer 17 may also play a role in isolating water and oxygen. The buffer layer 122 is formed by deposition on the SiO layer 17 to improve the water and oxygen resistance of the substrate 11.

[0099] S12, forming a first gate insulating layer 123 on a side of the buffer layer 122 facing away from the substrate 11. For example, the first gate insulating layer 123 (GI1 layer) may be formed on the buffer layer 122 by deposition.

[0100] S13, forming a first interlayer insulating layer 124 on a side of the first gate insulating layer 123 away from the buffer layer 122. For example, the first interlayer insulating layer 124 (ILD1 layer) can be formed on a side of the first gate insulating layer 123 (GI1 layer) away from the buffer layer 122 by deposition.

[0101] S14, forming a second gate insulating layer 125 on a side of the first interlayer insulating layer 124 away from the first gate insulating layer 123. For example, the second gate insulating layer 125 (GI2 layer) can be formed on a side of the first interlayer insulating layer 124 (ILD1 layer) away from the first gate insulating layer 123 (GI1 layer) by deposition.

[0102] S15, forming a second interlayer insulating layer 126 on the side of the second gate insulating layer 125 (GI2) away from the first interlayer insulating layer 124 (ILD1). For example, the second interlayer insulating layer 126 (ILD2 layer) can be formed on the side of the second gate insulating layer 125 (GI2 layer) away from the first interlayer insulating layer 124 (ILD1 layer) by deposition.

[0103] When the driving structure layer 12 is provided with the fourth light-transmitting hole 121, the fourth light-transmitting hole 121 can be formed on the driving structure layer 12 by masking, exposure, development and etching processes. Preferably, the fourth light-transmitting hole 121 can be formed by dry etching process, and the fourth light-transmitting hole 121 formed in this way has higher precision.

[0104] The fourth light-transmitting hole 121 may be provided in at least one of the buffer layer 122, the first gate insulating layer 123 (GI1), the first interlayer insulating layer 124 (ILD1), the second gate insulating layer 125 (GI2), and the second interlayer insulating layer 126 (ILD2). Exemplarily, when the fourth light-transmitting hole 121 is provided in only one of the buffer layer 122, the first gate insulating layer 123 (GI1 layer), the first interlayer insulating layer 124 (ILD1 layer), the second gate insulating layer 125 (GI2 layer), and the second interlayer insulating layer 126 (ILD2 layer), such as when the fourth light-transmitting hole 121 is provided only in the buffer layer 122, the fourth light-transmitting hole 121 may be formed on the buffer layer 122 by masking, exposure, development, and etching processes. When the fourth light-transmitting hole 121 is provided only in the first gate insulating layer 123 (GI1 layer), the fourth light-transmitting hole 121 may be formed on the first gate insulating layer 123 (GI1 layer) by masking, exposure, development, and etching processes. When the fourth light-transmitting hole 121 is provided only in the first interlayer insulating layer 124 (ILD1 layer), the fourth light-transmitting hole 121 may be formed on the first interlayer insulating layer 124 (ILD1 layer) by masking, exposure, development, and etching processes. When the fourth light-transmitting hole 121 is provided only in the second gate insulating layer 125 (GI2 layer), the fourth light-transmitting hole 121 may be formed on the second gate insulating layer 125 (GI2 layer) by masking, exposure, development, and etching processes. When the fourth light-transmitting hole 121 is provided only in the second interlayer insulating layer 126 (ILD2 layer), the fourth light-transmitting hole 121 may be formed on the second interlayer insulating layer 126 (ILD2 layer) by masking, exposure, development, and etching processes.

[0105] S20, forming a planarization layer 13 on one side of the driving structure layer 12, wherein the planarization layer 13 is provided with a first light-transmitting hole 131. Specifically, the planarization layer 13 is formed on the second interlayer insulating layer 126 (ILD2) of the driving structure layer 12, and a fourth light-transmitting hole 121 is formed on the planarization layer 13 through masking, exposure, development, and etching processes.

[0106] S30, forming a display layer 14 on the side of the planarization layer 13 facing away from the substrate 11, wherein the display layer 14 is provided with a second light-transmitting hole 141, and the orthographic projection of the second light-transmitting hole 141 on the substrate 11 at least partially overlaps with the orthographic projection of the first light-transmitting hole 131 on the substrate 11.

[0107] The display layer 14 includes a first electrode layer 142, an organic light-emitting layer 143, and a second electrode layer 144. Since the display layer 14 is provided with a second light-transmitting hole 141, the display layer 14 includes a multi-layer structure. It can be understood that the second light-transmitting hole 141 includes a first sub-light-transmitting hole 1411, a second sub-light-transmitting hole 1412, and a third sub-light-transmitting hole 1413 that are coaxially arranged, and the first electrode layer 142 is provided with a first sub-light-transmitting hole 1411. The organic light-emitting layer 143 is provided with a second sub-light-transmitting hole 1412. The second electrode layer 144 is provided with a third sub-light-transmitting hole 1413.

[0108] Forming the display layer 14 on the side of the planarization layer 13 facing away from the substrate 11 may include:

[0109] S31, forming a first electrode layer 142 on the side of the planarization layer 13 away from the substrate 11. It can be understood that the first electrode layer 142 includes a pixel definition layer 1422 and an electrode body layer 1423. Forming the first electrode layer 142 on the side of the planarization layer 13 away from the substrate 11 includes:

[0110] The electrode body layer 1423 pattern is deposited on the planarization layer 13 .

[0111] The pixel definition layer 1422 is coated on the planarization layer 13 so that the pixel definition layer 1422 covers the planarization layer 13 and the electrode body layer 1423 pattern.

[0112] A pixel opening region 1424 is formed on the pixel definition layer 1422 through masking, exposure, development, and etching processes to expose the pattern of the electrode body layer 1423 so that an organic light emitting layer 143 can be subsequently disposed on the electrode body layer 1423 .

[0113] The first light-transmitting sub-hole 1411 is formed on the pixel definition layer 1422 through masking, exposure, development, and etching processes.

[0114] S32, forming an organic light emitting layer 143 on the first electrode layer 142. Specifically, the organic light emitting layer 143 may cover the pixel definition layer 1422 and the electrode body layer 1423. Of course, in some other embodiments, the organic light emitting layer 143 may also only cover the electrode body layer 1423.

[0115] S33 , forming a second sub-light-transmitting hole 1412 on the organic light-emitting layer 143 through masking, exposure, development, and etching processes.

[0116] S34, forming a second electrode layer 144 on the organic light-emitting layer 143. The second electrode is made of a semi-transparent and semi-reflective metal, that is, the second electrode can transmit light. In this case, please refer to the figure, the third sub-light-transmitting hole 1413 can also be a blind hole, that is, the second electrode layer 144 is not provided with a through hole but is provided as a blind hole. Since the second electrode itself can transmit light, it can transmit light even if it is provided as a blind hole.

[0117] Exemplarily, when the third light-transmitting sub-hole 1413 is a through hole, laser drilling may be used to form the third light-transmitting sub-hole 1413 on the second electrode layer 144 .

[0118] When the third light-transmitting sub-hole 1413 is a blind hole, the second electrode layer 144 having the third light-transmitting sub-hole 1413 (blind hole) can be formed by multiple evaporation with a common metal mask (Common Metal Mask, CMM). Specifically, first, the first second electrode layer 144 can be evaporated on the organic light-emitting layer 143, and then the CMM mask is covered to block the area where the third light-transmitting sub-hole 1413 is to be formed, and the other areas of the first second electrode layer 144 are exposed, and then the second electrode layer 144 is evaporated again. At this time, the thickness of the unblocked part becomes thicker, and the blocked part is not evaporated with the second electrode layer 144, so the thickness of the blocked part is thinner, and then the method is evaporated several times to obtain the second electrode layer 144 having the third light-transmitting sub-hole 1413 (blind hole).

[0119] Of course, in some embodiments, when the third light-transmitting sub-hole 1413 is a blind hole, the third light-transmitting sub-hole 1413 (blind hole) can also be formed on the second electrode layer 144 by laser drilling.

[0120] S40, forming an encapsulation layer 15 on a side of the display layer 14 away from the planarization layer 13. Specifically, the encapsulation layer 15 may be formed on a side of the second electrode layer 144 away from the organic light-emitting layer 143.

[0121] S50, a color filter layer 16 is formed on the side of the encapsulation layer 15 away from the display layer 14, and the color filter layer 16 is provided with a third light-transmitting hole 163, and the orthographic projection of the third light-transmitting hole 163 on the substrate 11 overlaps at least partially with the orthographic projection of the second light-transmitting hole 141 on the substrate 11 and the orthographic projection of the first light-transmitting hole 131 on the substrate 11. Specifically, the color filter layer 16 is formed on the side of the encapsulation layer 15 away from the second electrode. It can be understood that the color filter layer 16 includes a black silk matrix layer and filter layers 162 of different colors, and the filter layers 162 of different colors are arranged at intervals, and the black matrix layer 161 is arranged between the filter layers 162 to separate the filter layers 162 of different colors. The third light-transmitting hole 163 is arranged in the black matrix layer 161 of the color filter layer 16, such as, the third light-transmitting hole 163 can be formed on the black matrix layer 161 by conventional masking, exposure, development, and etching processes.

[0122] In some embodiments, see Fig.10 , Fig.10 for Figure 1 The fourth partial cross-sectional view of the electronic device at the light sensing area is shown. The method for preparing the display device 10 also includes:

[0123] S60 , applying a glue layer 40 on the side of the color filter layer 16 facing away from the encapsulation layer 15 . The glue layer may be OC glue.

[0124] S70, covering the adhesive layer with a protective layer 50, which may be UTG ultra-thin glass.

[0125] S80, covering the protective layer with a protective film 60, which may be a polyethylene terephthalate (PET) polymer film.

[0126] The display device, the method for preparing the display device, and the electronic device provided in the embodiments of the present application are described in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application, and the description of the above embodiments is only used to help understand the present application. At the same time, for those skilled in the art, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present application.

Claims

1. A display device, characterized in that: The display device comprises: A substrate, used to be arranged on one side of the light sensing element; A driving structure layer is arranged on a side of the substrate away from the light sensing element; A planarization layer is arranged on a side of the driving structure layer away from the substrate, the planarization layer is provided with a first light-transmitting hole, and an orthographic projection of the first light-transmitting hole on the substrate at least partially overlaps with an orthographic projection of the light-sensing element on the substrate; A display layer is arranged on a side of the planarization layer away from the driving structure layer, the display layer is provided with a second light-transmitting hole, and the orthographic projection of the second light-transmitting hole on the substrate at least partially overlaps with the orthographic projection of the first light-transmitting hole on the substrate and the orthographic projection of the light-sensing element on the substrate; an encapsulation layer, disposed on a side of the display layer away from the planarization layer; and The color filter layer is arranged on the side of the encapsulation layer away from the display layer, and the color filter layer is provided with a third light-transmitting hole, and the orthographic projection of the third light-transmitting hole on the substrate at least partially overlaps with the orthographic projection of the second light-transmitting hole on the substrate, the orthographic projection of the first light-transmitting hole on the substrate, and the orthographic projection of the photosensitive element on the substrate.

2. The display device according to claim 1, characterized in that The driving structure layer is provided with a fourth light-transmitting hole, and the orthographic projection of the fourth light-transmitting hole on the substrate at least partially overlaps with the orthographic projection of the first light-transmitting hole on the substrate and the orthographic projection of the light-sensing element on the substrate.

3. The display device according to claim 2, characterized in that: The driving structure layer includes: A buffer layer is disposed on a side of the substrate away from the light sensing element; A first gate insulating layer, disposed on a side of the buffer layer away from the substrate; A first interlayer insulating layer, disposed on a side of the first gate insulating layer away from the buffer layer; a second gate insulating layer, disposed on a side of the first interlayer insulating layer away from the first gate insulating layer; and A second interlayer insulating layer is disposed on a side of the second gate insulating layer away from the first interlayer insulating layer; Wherein, the planarization layer is arranged on a side of the second interlayer insulating layer away from the second gate insulating layer.

4. The display device according to claim 3, characterized in that The fourth light-transmitting hole penetrates at least one of the buffer layer, the first gate insulating layer, the first interlayer insulating layer, the second gate insulating layer, and the second interlayer insulating layer.

5. The display device according to claim 4, characterized in that: The display device comprises a display area and a light sensing area, the light sensing area covers the light sensing element, and the first light transmission hole, the second light transmission hole, the third light transmission hole and the fourth light transmission hole are all located in the light sensing area; When the fourth light-transmitting hole passes through at least one of the first interlayer insulating layer and the second interlayer insulating layer, at least one of the first interlayer insulating layer and the second interlayer insulating layer is further provided with a hollow hole, and the hollow hole is located in the display area.

6. The display device according to claim 5, characterized in that: The area of ​​the hollow hole is equal to the area of ​​the fourth light-transmitting hole.

7. The display device according to claim 6, characterized in that: The display device further includes a non-display area, the non-display area includes a compensation electrical layer, and the material of the compensation electrical layer is the same as that of the first interlayer insulating layer.

8. The display device according to claim 7, characterized in that: The area of ​​the compensation electrical layer is equal to the sum of the areas of the fourth light-transmitting hole and the hollow hole.

9. The display device according to any one of claims 1 to 8, characterized in that: The second light-transmitting hole comprises a first sub-light-transmitting hole, a second sub-light-transmitting hole and a third sub-light-transmitting hole which are coaxially arranged, and the display layer comprises: A first electrode layer is disposed on a side of the planarization layer away from the driving structure layer, and the first electrode layer is provided with the first sub-light-transmitting hole; an organic light-emitting layer, disposed on a side of the first electrode layer away from the planarization layer, the organic light-emitting layer being provided with the second sub-light-transmitting hole; and The second electrode layer is arranged on a side of the organic light-emitting layer away from the first electrode layer, and the second electrode layer is provided with the third sub-light-transmitting hole.

10. The display device according to claim 9, characterized in that: The first sub-light-transmitting hole and the second sub-light-transmitting hole are through holes, and the third sub-light-transmitting hole is a through hole or a blind hole.

11. The display device according to claim 10, characterized in that: When the third light-transmitting sub-hole is a blind hole, a hole depth of the blind hole is 2 nanometers to 4 nanometers smaller than a maximum thickness of the second electrode layer.

12. The display device according to claim 9, characterized in that: The first electrode layer includes a pixel definition layer and an electrode body layer, the pixel definition layer and the electrode body layer are both arranged on the planarization layer, the pixel definition layer is provided with a pixel opening area, and the electrode body layer is located in the pixel opening area; The pixel definition layer is made of a light shielding material, and the first light-transmitting sub-hole is disposed in the pixel definition layer.

13. The display device according to any one of claims 1 to 8, characterized in that: The color filter layer includes a black matrix layer and filter layers of different colors. The black matrix layer and the filter layers are both arranged on the encapsulation layer. The filter layers of different colors are arranged at intervals. The black matrix layer is arranged between the filter layers to separate the filter layers of different colors. The third light-transmitting hole is arranged in the black matrix layer.

14. A method for preparing a display device, characterized in that: include: forming a driving structure layer on the substrate; Forming a planarization layer on one side of the driving structure layer, wherein the planarization layer is provided with a first light-transmitting hole; forming a display layer on a side of the planarization layer facing away from the substrate, the display layer being provided with a second light-transmitting hole, the orthographic projection of the second light-transmitting hole on the substrate at least partially overlapping with the orthographic projection of the first light-transmitting hole on the substrate; forming an encapsulation layer on a side of the display layer away from the planarization layer; A color filter layer is formed on a side of the encapsulation layer away from the display layer, and the color filter layer is provided with a third light-transmitting hole, and the orthographic projection of the third light-transmitting hole on the substrate at least partially overlaps with the orthographic projection of the second light-transmitting hole on the substrate and the orthographic projection of the first light-transmitting hole on the substrate.

15. The preparation method according to claim 14, characterized in that: After forming the driving structure layer on the substrate, the preparation method further comprises: A fourth light-transmitting hole is formed on the driving structure layer by dry etching.

16. The preparation method according to claim 14, characterized in that: The forming of a driving structure layer on the substrate comprises: forming a buffer layer on the substrate; forming a first gate insulating layer on a side of the buffer layer facing away from the substrate; forming a first interlayer insulating layer on a side of the first gate insulating layer away from the buffer layer; forming a second gate insulating layer on a side of the first interlayer insulating layer away from the first gate insulating layer; forming a second interlayer insulating layer on a side of the second gate insulating layer away from the first interlayer insulating layer; A fourth light-transmitting hole is provided in at least one of the buffer layer, the first gate insulating layer, the first interlayer insulating layer, the second gate insulating layer and the second interlayer insulating layer.

17. An electronic device, characterized in that: The invention comprises a light sensing element and a display device as claimed in any one of claims 1 to 13, wherein the light sensing element is arranged on one side of the display device.

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