Wafer cutting device and wafer cutting method

Abstract

The embodiment of the invention provides a wafer cutting device and a wafer cutting method. The wafer cutting device comprises a bearing table, a first cutting sub-device and a second cutting sub-device, wherein the bearing table is used for bearing a wafer to be cut; the first cutting sub-device is used for cutting the wafer to be cut from a first side; the second cutting sub-device is used for cutting the wafer to be cut from a second side; the first side and the second side are two opposite sides of the bearing table along a first direction, and the first direction is the thickness direction of the bearing table.

Description

Wafer cutting device and wafer cutting method Technical Field

[0001] The present disclosure relates to, but is not limited to, a wafer cutting device and a wafer cutting method. Background Art

[0002] In the semiconductor manufacturing process, multiple chips are first formed on a wafer through a semiconductor process, and then the wafer is cut into separate chips through a cutting process. These chips are then packaged to finally obtain usable semiconductor devices.

[0003] As the requirements for semiconductor device integration become increasingly higher, wafer cutting is also accompanied by many challenges.

[0004] Summary of the Invention

[0005] According to a first aspect of an embodiment of the present disclosure, a wafer cutting device is provided, comprising: a carrier, a first cutting sub-device, and a second cutting sub-device; wherein,

[0006] The carrying platform is used to carry the wafer to be cut;

[0007] The first cutting sub-device is used to cut the wafer to be cut from a first side;

[0008] The second cutting sub-device is used to cut the wafer to be cut from the second side; the first side and the second side are two opposite sides of the supporting platform along the first direction, and the first direction is the thickness direction of the supporting platform.

[0009] In the above solution, both the first cutting sub-device and the second cutting sub-device are used for laser cutting.

[0010] In the above scheme, the first cutting sub-device includes a first focusing mirror, which is located on the first side; the second cutting sub-device includes a second focusing mirror, which is located on the second side; when cutting the wafer to be cut, the first focusing mirror and the second focusing mirror are aligned along the first direction.

[0011] In the above solution, the positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are immovable, and the first focusing mirror and the second focusing mirror are aligned along the first direction.

[0012] In the above scheme, the positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are movable. When cutting the wafer to be cut, the positions of the first focusing mirror and the second focusing mirror are adjusted so that the first focusing mirror and the second focusing mirror are aligned along the first direction.

[0013] In the above solution, the first cutting sub-device further includes a first laser, and the first laser is used to provide a first laser to the first focusing mirror;

[0014] The second cutting sub-device further includes a second laser, which is used to provide a second laser to the second focusing mirror.

[0015] In the above solution, the first cutting sub-device and the second cutting sub-device both further include a first laser; the first laser is used to provide a first laser to the first focusing mirror, and to provide a second laser to the second focusing mirror.

[0016] In the above solution, the first laser is located on the first side, and the second laser is located on the second side; the first laser is aligned with the first focusing mirror along the first direction, and the second laser is aligned with the second focusing mirror along the first direction.

[0017] In the above solution, the first laser and the second laser are both located on the first side, or the first laser and the second laser are both located on the second side;

[0018] The first cutting sub-device further includes at least one first reflecting mirror; the first reflecting mirror is used to guide the first laser generated by the first laser into the first focusing mirror;

[0019] The second cutting sub-device further includes at least one second reflecting mirror; the second reflecting mirror is used to guide the second laser generated by the second laser into the second focusing mirror.

[0020] In the above solution, the carrier is provided with an opening, and when the wafer to be cut is placed on the carrier, the opening exposes the cutting path of the wafer to be cut.

[0021] In the above solution, the position of the carrier in the wafer cutting device is movable, and when cutting the wafer to be cut, cutting is performed at different positions of the wafer to be cut by moving the carrier.

[0022] According to a second aspect of an embodiment of the present disclosure, a wafer cutting method is provided, comprising:

[0023] Place the wafer to be cut on the carrier;

[0024] The wafer to be cut is cut from the first side using a first cutting sub-device, and the wafer to be cut is cut from the second side using a second cutting sub-device; the first side and the second side are two opposite sides of the carrier along a first direction, and the first direction is the thickness direction of the carrier.

[0025] In the above solution, both the first cutting sub-device and the second cutting sub-device are used for laser cutting.

[0026] In the above solution, the first cutting sub-device includes a first focusing mirror, and the first focusing mirror is located on the first side; the second cutting sub-device includes a second focusing mirror, and the second focusing mirror is located on the second side;

[0027] The method of cutting the wafer to be cut from a first side by using a first cutting sub-device and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:

[0028] When cutting the wafer to be cut, the first focusing mirror and the second focusing mirror are aligned along the first direction.

[0029] In the above solution, aligning the first focusing mirror and the second focusing mirror along the first direction includes:

[0030] The positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are immovable, the first focusing mirror and the second focusing mirror are aligned along the first direction, and the positions of the first focusing mirror and the second focusing mirror are not adjusted when the wafer to be cut is cut.

[0031] In the above solution, aligning the first focusing mirror and the second focusing mirror along the first direction includes:

[0032] The positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are movable. When cutting the wafer to be cut, the positions of the first focusing mirror and the second focusing mirror are adjusted so that the first focusing mirror and the second focusing mirror are aligned along the first direction.

[0033] In the above solution, the first cutting sub-device further includes a first laser, and the second cutting sub-device further includes a second laser;

[0034] The method of cutting the wafer to be cut from a first side by using a first cutting sub-device and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:

[0035] The first laser is used to provide the first focusing mirror with the first laser, thereby cutting the wafer to be cut from the first side; and the second laser is used to provide the second focusing mirror with the second laser, thereby cutting the wafer to be cut from the second side.

[0036] In the above solution, the first cutting sub-device and the second cutting sub-device both further include a first laser;

[0037] The method of cutting the wafer to be cut from a first side by using a first cutting sub-device and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:

[0038] The first laser is used to provide the first focusing mirror with a first laser, thereby cutting the wafer to be cut from a first side; and the first laser is used to provide the second focusing mirror with a second laser, thereby cutting the wafer to be cut from a second side.

[0039] In the above solution, the position of the carrier platform in the wafer cutting device is movable;

[0040] The method of cutting the wafer to be cut from a first side by using a first cutting sub-device and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:

[0041] When cutting the wafer to be cut, the carrier platform is moved to cut different positions of the wafer to be cut. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] FIG1 is a structural schematic diagram 1 of a wafer cutting device according to an embodiment of the present disclosure;

[0043] FIG2 is a schematic structural diagram of a wafer to be cut according to an embodiment of the present disclosure;

[0044] FIG3 is a second structural diagram of a wafer cutting device according to an embodiment of the present disclosure;

[0045] FIG4 is a third structural diagram of a wafer cutting device according to an embodiment of the present disclosure;

[0046] FIG5 is a fourth structural diagram of a wafer cutting device according to an embodiment of the present disclosure;

[0047] FIG6 is a fifth structural diagram of a wafer cutting device according to an embodiment of the present disclosure;

[0048] FIG7 is a sixth structural diagram of a wafer cutting device according to an embodiment of the present disclosure;

[0049] FIG8 is a schematic diagram of a top view of a supporting platform according to an embodiment of the present disclosure;

[0050] FIG9 is a second schematic diagram of a top view of the supporting platform according to an embodiment of the present disclosure;

[0051] FIG10 is a schematic diagram of an implementation flow of a wafer cutting method according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0052] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments described herein. Instead, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0053] In the following description, numerous specific details are provided to provide a more thorough understanding of the present disclosure. However, it will be apparent to those skilled in the art that the present disclosure can be practiced without one or more of these details. In other instances, certain technical features known in the art are not described to avoid confusion with the present disclosure; that is, all features of actual embodiments are not described herein, nor are well-known functions and structures described in detail.

[0054] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0055] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there may be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer, or part discussed below may be represented as the second element, component, region, layer, or part. And when the second element, component, region, layer, or part is discussed, it does not necessarily mean that the first element, component, region, layer, or part is present in the present disclosure.

[0056] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the drawings is flipped, then the elements or features described as "under the other elements" or "under it" or "under it" will be oriented as "on" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0057] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present disclosure. When used herein, the singular forms "a", "an", and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0058] In order to enable a more detailed understanding of the features and technical contents of the embodiments of the present disclosure, the implementation of the embodiments of the present disclosure is described in detail below with reference to the accompanying drawings. The accompanying drawings are for reference only and are not intended to limit the embodiments of the present disclosure.

[0059] With the rapid development of the electronics industry, there is an increasing demand for high-performance, low-cost semiconductor devices. The integration level of traditional two-dimensional or planar memory is mainly determined by the area occupied by the unit memory cell. Therefore, the integration level of traditional two-dimensional memory is largely affected by the fine pattern formation technology. However, increasing the fineness of the pattern requires relatively expensive process equipment, which greatly limits the increase in the integration level of two-dimensional memory. Three-dimensional memory devices are an emerging type of flash memory developed by the industry. Three-dimensional memory devices address the limitations of two-dimensional or planar flash memory by vertically stacking multiple layers of data storage units. Three-dimensional memory devices have excellent precision, support higher storage capacity in a smaller space, are low cost and low power consumption, and can fully meet many needs.

[0060] Wafer dicing is a critical process in semiconductor manufacturing. To minimize the impact of scratching or dicing on the mechanical strength of the chip, a stealth dicing (SDBG) process is often employed. This process first splits the wafer along the dicing path, followed by backside grinding. This removes mechanical damage from the stealth dicing process while still producing chips of the desired thickness.

[0061] However, with the increasing demand for semiconductor device integration, the number of stacked layers in three-dimensional memory devices is increasing, the thickness of three-dimensional memory devices is growing, and the dicing paths are increasingly complex with increasingly complex metal layer structures containing large amounts of tungsten. This makes it impossible to split the wafer in the desired direction using the SDBG process, resulting in chip chipping, edge collapse, or damage, thereby affecting chip yield. To address this issue, some embodiments utilize laser cutting processes for both the front and back sides of the wafer. However, due to the limitations of existing wafer cutting equipment, the front side of the wafer must be cut first, and then the wafer is flipped over to cut the back side. This results in low cutting efficiency and difficulty aligning the cutting positions on the front and back sides.

[0062] In view of one or more of the above problems, an embodiment of the present disclosure provides a wafer cutting device, as shown in FIG1 , comprising:

[0063] The carrier 101, the first cutting sub-device 111, and the second cutting sub-device 112; wherein,

[0064] The carrier 101 is used to carry the wafer 102 to be cut;

[0065] The first cutting sub-device 111 is used to cut the wafer 102 to be cut from a first side;

[0066] The second cutting sub-device 112 is used to cut the wafer 102 to be cut from the second side; the first side and the second side are two opposite sides of the carrier 101 along the first direction, and the first direction is the thickness direction of the carrier 101.

[0067] In some specific examples, the first direction is the vertical direction as shown in Figure 1, the first side is the upper side of the supporting platform 101 shown in Figure 1, and the second side is the lower side of the supporting platform 101 described in Figure 1, but the first side and the second side are not limited to this.

[0068] In some specific examples, the wafer 102 to be cut may be, for example, a wafer that has completed the wafer stage (for example, the stage of forming the device structure and the interconnection structure of the device structure). The wafer 102 to be cut may include a semiconductor substrate and chips arranged in an array on the semiconductor substrate. The chip may include a device structure and the interconnection structure of the device structure. The device structure may include at least one of an active device and a passive device. The active device may include, for example, a MOS device, a memory device, or other semiconductor device, wherein the memory device may include, for example, a non-volatile memory or a random access memory. The non-volatile memory may include, for example, a floating gate field effect transistor of at least one of a three-dimensional NAND memory and a three-dimensional NOR memory, or a dynamic random access memory, a ferroelectric memory, a phase change memory, etc. The passive device may include, for example, a resistor, a capacitor, or an inductor, and the device structure may be a planar device or a three-dimensional device, wherein the three-dimensional device may include, for example, a FIN-FET (fin field effect transistor) and a three-dimensional memory.

[0069] In some specific examples, as shown in FIG2 , a wafer 102 to be cut includes a semiconductor substrate 114 and a plurality of chips 107 on the semiconductor substrate 114. The chips 107 are separated from each other by dicing streets 108. The dicing streets 108 can be arranged, for example, vertically or horizontally. In other words, dicing streets 108 are provided between rows and columns of the chip array. Actual devices are not formed on the dicing streets 108; the dicing streets 108 are primarily used to cut the chips.

[0070] In some specific examples, the semiconductor substrate 114 may include silicon (eg, single crystal silicon, c-Si), silicon germanium (SiGe), gallium arsenide (GaAs), germanium (Ge), silicon on insulator (SOI), or any other suitable material.

[0071] In some specific examples, the diameter of the wafer 102 to be cut may include 150 mm, 200 mm, 300 mm, 450 mm, etc., but is not limited thereto.

[0072] In the embodiments of the present disclosure, the types of cutting used by the first cutting sub-device and the second cutting sub-device include, but are not limited to, laser cutting, blade cutting, and plasma cutting. In some specific examples, the types of cutting used by the first cutting sub-device and the second cutting sub-device can be the same or different. For example, the first cutting sub-device and the second cutting sub-device can both be used for laser cutting, or both for blade cutting; or one of the first cutting sub-device and the second cutting sub-device can be used for laser cutting, and the other for blade cutting.

[0073] In some embodiments, the first cutting sub-device and the second cutting sub-device are both used for laser cutting.

[0074] In some embodiments, as shown in Figure 1, the first cutting sub-device includes a first focusing mirror 103, which is located on the first side; the second cutting sub-device includes a second focusing mirror 104, which is located on the second side; when cutting the wafer 102 to be cut, the first focusing mirror 103 and the second focusing mirror 104 are aligned along the first direction.

[0075] Here, the first focusing mirror 103 and the second focusing mirror 104 are aligned along the first direction, which can be understood as the line connecting the first focusing mirror 103 and the second focusing mirror 104 is parallel to the thickness direction of the supporting platform 101 .

[0076] It can be understood that the first focusing mirror 103 and the second focusing mirror 104 of the wafer cutting device provided in the embodiment of the present disclosure are respectively located on both sides of the carrier 101, and when cutting, the first focusing mirror 103 and the second focusing mirror 104 are aligned along the thickness direction of the carrier 101, so that when the front and back sides of the wafer are cut at the same time, the front cutting position and the back cutting position can be better aligned.

[0077] Here, the front and back sides of the wafer 102 to be cut refer to the two opposite sides in terms of thickness of the wafer 102 to be cut. In some specific examples, the front side of the wafer 102 to be cut refers to the side on which components, stacks, connecting lines, and pads are formed on the semiconductor substrate.

[0078] The following will specifically introduce how to align the first focusing mirror 103 and the second focusing mirror 104 along the first direction. The present disclosure mainly provides two solutions.

[0079] Option 1:

[0080] In some embodiments, the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting device are immovable, and the first focusing mirror 103 and the second focusing mirror 104 are aligned along the first direction.

[0081] It is understood that the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting apparatus are fixed, and the first focusing mirror 103 and the second focusing mirror 104 are aligned along the first direction. In this way, when the front and back sides of the wafer are cut simultaneously, the positions of the front and back sides are aligned. By fixing the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting apparatus to achieve alignment, it is possible to reduce errors caused by frequently adjusting the relative positions of the first focusing mirror 103 and the second focusing mirror 104, and also to save the extra workload caused by frequently adjusting the first focusing mirror 103 and the second focusing mirror 104.

[0082] Option 2:

[0083] In some embodiments, the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting device are movable. When cutting the wafer 102 to be cut, the positions of the first focusing mirror 103 and the second focusing mirror 104 are adjusted so that the first focusing mirror 103 and the second focusing mirror 104 are aligned along the first direction.

[0084] It is understood that the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting apparatus may not be fixed, and the alignment of the first focusing mirror 103 and the second focusing mirror 104 may be controlled by a computer during the cutting process. The positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting apparatus are movable, so that the positions of the first focusing mirror 103 and the second focusing mirror 104 are not limited, and the relative positions of the first focusing mirror 103 and the second focusing mirror 104 can be adjusted according to actual needs, which provides greater flexibility and can meet more cutting requirements.

[0085] When cutting the wafer 102 to be cut, the first focusing mirror 103 cuts the wafer 102 to be cut by the first laser, and the second focusing mirror 104 cuts the wafer 102 to be cut by the second laser. As for how to provide the first laser and the second laser, the embodiments of the present disclosure provide multiple solutions.

[0086] First, regarding the lasers that provide the first laser light and the second laser light, the first laser light and the second laser light may be provided by two lasers respectively, or the first laser light and the second laser light may be provided by the same laser together.

[0087] In some embodiments, the first cutting sub-device further includes a first laser 105 , and the first laser 105 is used to provide a first laser to the first focusing mirror 103 ;

[0088] The second cutting sub-device further includes a second laser 106 , which is configured to provide a second laser to the second focusing mirror 104 .

[0089] In some embodiments, the first cutting sub-device and the second cutting sub-device both further include a first laser 105 ; the first laser 105 is used to provide a first laser to the first focusing mirror 103 , and to provide a second laser to the second focusing mirror 104 .

[0090] In some specific examples, the light emitted by the first laser 105 can be frequency-split into two laser beams, which are then provided to the first focusing mirror 103 and the second focusing mirror 104 respectively.

[0091] When the first laser and the second laser are provided by the first laser 105 and the second laser 106 respectively, the positions of the first laser 105 and the second laser 106 may include various situations. The positions of the first laser 105 and the second laser 106 will be described in detail below.

[0092] As shown in FIG. 1 , FIG. 3 , and FIG. 4 , the first laser 105 and the second laser 106 may be located on the first side and the second side, respectively.

[0093] In some embodiments, as shown in FIG1 , the first laser 105 is located on the first side, and the second laser 106 is located on the second side; the first laser 105 is aligned with the first focusing mirror 103 along the first direction, and the second laser 106 is aligned with the second focusing mirror 104 along the first direction.

[0094] Here, the first laser 105 is aligned with the first focusing mirror 103 along the first direction, and the second laser 106 is aligned with the second focusing mirror 104 along the first direction. It can be understood that: the line connecting the light outlet of the first laser 105 and the light inlet of the first focusing mirror 103 is parallel to the thickness direction of the supporting platform 101; the line connecting the light outlet of the second laser 106 and the light inlet of the second focusing mirror 104 is parallel to the thickness direction of the supporting platform 101.

[0095] It can be understood that the first laser 105 is aligned with the first focusing mirror 103 along the first direction, and the second laser 106 is aligned with the second focusing mirror 104 along the first direction, so that the laser generated by the first focusing mirror 103 can be directly irradiated into the first focusing mirror 103, and the laser generated by the second focusing mirror 104 can be directly irradiated into the second focusing mirror 104. On the one hand, the path of the generated laser to the focusing mirror is shorter, which can reduce the energy loss of the laser during propagation along a long path; on the other hand, the wafer cutting device has fewer structural components.

[0096] In other embodiments, the first laser 105 and the first focusing mirror 103 may not be aligned along the first direction, and / or the second laser 106 and the second focusing mirror 104 may not be aligned along the first direction. As shown in Figures 3 and 4, when the first laser 105 and the first focusing mirror 103 are not aligned along the first direction, and / or the second laser 106 and the second focusing mirror 104 are not aligned along the first direction, an optical path conversion structure can be provided to guide the first laser into the first focusing mirror and the second laser into the second focusing mirror.

[0097] In the embodiment of the present disclosure, the optical path conversion structure includes a reflector, specifically a first reflector 109 and a second reflector 113. By setting the first reflector 109 and the second reflector 113, the first laser enters the first focusing mirror 103 and the second laser enters the second focusing mirror 104.

[0098] In some embodiments, as shown in FIG5 , the first laser 105 and the second laser 106 are both located on the first side, or, as shown in FIG6 , the first laser 105 and the second laser 106 are both located on the second side;

[0099] The first cutting sub-device further includes at least one first reflecting mirror 109; the first reflecting mirror 109 is used to guide the first laser generated by the first laser 105 into the first focusing mirror 103;

[0100] The second cutting sub-device further includes at least one second reflecting mirror 113 ; the second reflecting mirror 113 is used to guide the second laser light generated by the second laser 106 into the second focusing mirror 104 .

[0101] It should be noted that, in Figures 5 and 6, the directions of the lasers emitted by the first laser 105 and the second laser 106 are opposite, and the directions of the lasers emitted by the first laser 105 and the second laser 106 are both perpendicular to the first direction. The first cutting sub-device includes three first reflectors 109, and the second cutting sub-device includes three second reflectors 113. However, in actual applications, the relative positions of the first laser 105 and the second laser 106 and the number of first reflectors 109 and second reflectors 113 are not limited to this. In some specific examples, the number and position of the first reflectors and the second reflectors can be specifically set according to the optical path directions of the first laser emitted from the first laser and the second laser emitted from the second laser. As long as the first laser can enter the first focusing mirror 103 and the second laser can enter the second focusing mirror 104, the cutting of the wafer to be cut can be achieved.

[0102] The following describes the configuration of the first and second reflectors in detail using Figure 6 as an example. Figure 6 shows three first reflectors 109. The direction of the first laser light emitted from the first laser 105 is horizontally to the right. The first first reflector first changes the optical path of the first laser light to a vertically upward direction. Since the angle of incidence is equal to the angle of reflection, the angle a1 between the first reflector and the horizontal direction can be set to 45°. The second first reflector then changes the optical path of the first laser light from a vertically upward direction to a horizontally leftward direction. Similarly, the angle a2 between the second first reflector and the horizontal direction can be set to 135°. The third first reflector then changes the optical path of the first laser light to a vertically downward direction, thereby directing it into the first focusing mirror. Similarly, the angle a3 between the third first focusing mirror and the horizontal direction can be set to 45°. The setting of the second reflector is similar to that of the first reflector. The angle a4 between the first second reflector and the horizontal direction is 135°, the angle a5 between the second second reflector and the horizontal direction is 45°, and the angle a6 between the third second reflector and the horizontal direction is 45°, so that the second laser is introduced into the second focusing mirror.

[0103] It can be understood that locating the first laser 105 and the second laser 106 on the same side can reduce the height of the wafer cutting device, thereby preventing the wafer cutting device from being too high and being difficult to install or use.

[0104] As shown in Figure 7, the height of the wafer cutting device and the simplicity of the structural components can also be comprehensively considered, so that the first laser 105 and the second laser 106 are located on the same side, and the lasers from the first laser 105 and the second laser 106 are both vertically downward. The first laser generated by the first laser 105 directly enters the first focusing mirror 103, and the second laser generated by the second laser 106 is introduced into the second focusing mirror 104 through the second reflecting mirror 113.

[0105] It should be noted that Figures 1 and 3 to 7 are only examples and are not used to limit the first cutting sub-device and the second cutting sub-device in the embodiment of the present disclosure. The first cutting sub-device and the second cutting sub-device in Figures 1 and 3 to 7 can also be combined with each other without conflict.

[0106] In the disclosed embodiments, the wavelength of the first laser and the wavelength of the second laser can be the same or different. For example, if the front side of the wafer to be cut has more metal layers and the back side has more dielectric layers, a shorter wavelength laser can be selected to cut the front side of the wafer, and a longer wavelength laser can be selected to cut the back side of the wafer. In actual applications, the selection can be based on the actual materials of the front and back sides of the wafer to be cut.

[0107] In the embodiment of the present disclosure, while improving other components of the wafer cutting device, the supporting platform 101 can also be configured accordingly. Figures 8 and 9 are schematic diagrams of the top view structure of a supporting platform 101 shown in the embodiment of the present disclosure. It should be noted that in order to more clearly show the relationship between the supporting platform 101 and the wafer 102 to be cut, Figure 9 shows a perspective view, and the actual supporting platform 101 is located under the wafer 102 to be cut.

[0108] In some embodiments, as shown in FIG8 , the carrier 101 is provided with an opening 110 . As shown in FIG9 , when the wafer to be cut is placed on the carrier 101 , the opening 110 exposes the cutting street 108 of the wafer to be cut.

[0109] It is understandable that the carrier 101 is provided with an opening 110, which exposes the cutting path 108 of the wafer to be cut, so that the front side of the wafer to be cut can be cut without affecting the cutting of the back side of the wafer to be cut.

[0110] In some embodiments, the position of the carrier 101 in the wafer cutting device is movable. When cutting the wafer 102 to be cut, the carrier 101 is moved to cut different positions of the wafer 102 to be cut.

[0111] In the future, the cutting requirements for heterogeneous integration will be diverse and complex. The wafer cutting device in the embodiment of the present disclosure can meet a wider range of cutting requirements because it can cut both the front and back sides of the wafer 102 to be cut at the same time. For example, it can meet the cutting requirements when the number of stacked layers of chips is getting higher and higher.

[0112] An embodiment of the present disclosure provides a wafer cutting device, comprising: a carrier platform 101, a first cutting sub-device, and a second cutting sub-device; wherein the carrier platform 101 is used to carry a wafer 102 to be cut; the first cutting sub-device is used to cut the wafer 102 to be cut from a first side; the second cutting sub-device is used to cut the wafer 102 to be cut from a second side; the first side and the second side are two opposite sides of the carrier platform 101 along a first direction, and the first direction is the thickness direction of the carrier platform 101. In the embodiment of the present disclosure, the wafer cutting device includes a first cutting sub-device and a second cutting sub-device, which are respectively used to cut the wafer 102 to be cut from both sides of the thickness direction of the carrier 101. On the one hand, the wafer cutting device of the embodiment of the present disclosure can realize the cutting of both the front and back sides of the wafer 102 to be cut at the same time, which can improve the cutting efficiency; on the other hand, since the front and back sides of the wafer to be cut can be cut at the same time, the components of the first cutting sub-device and the second cutting sub-device can be set accordingly to improve the problem that it is difficult to align the cutting positions of the front and back sides during the process of cutting the front and back sides of the wafer 102 to be cut separately, thereby effectively improving the yield of the chip after cutting.

[0113] Based on the above-mentioned wafer cutting device, the embodiment of the present disclosure further provides a wafer cutting method, as shown in FIG10 , the method comprising:

[0114] Step S1001: placing a wafer to be cut on a carrier;

[0115] Step S1002: Use a first cutting sub-device to cut the wafer to be cut from a first side, and use a second cutting sub-device to cut the wafer to be cut from a second side; the first side and the second side are two opposite sides of the supporting platform along a first direction, and the first direction is the thickness direction of the supporting platform.

[0116] When cutting the wafer to be cut, the first cutting sub-device and the second cutting sub-device can be used to cut the front and back sides of the wafer to be cut at the same time, thereby effectively improving the cutting efficiency. When cutting the front and back sides at the same time, the front and back sides can be cut at the same position of the wafer to be cut at the same time, thereby effectively improving the position alignment problem when cutting the front and back sides.

[0117] In some embodiments, the first cutting sub-device and the second cutting sub-device are both used for laser cutting.

[0118] In some embodiments, the first cutting sub-device includes a first focusing mirror, and the first focusing mirror is located on the first side; the second cutting sub-device includes a second focusing mirror, and the second focusing mirror is located on the second side;

[0119] The method of cutting the wafer to be cut from a first side by using a first cutting sub-device and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:

[0120] When cutting the wafer to be cut, the first focusing mirror and the second focusing mirror are aligned along the first direction.

[0121] When cutting the wafer to be cut, the embodiment of the present disclosure provides two solutions for how to align the first focusing mirror and the second focusing mirror along the first direction.

[0122] Option 1:

[0123] In some embodiments, aligning the first focusing mirror and the second focusing mirror along the first direction includes:

[0124] The positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are immovable, the first focusing mirror and the second focusing mirror are aligned along the first direction, and the positions of the first focusing mirror and the second focusing mirror are not adjusted when the wafer to be cut is cut.

[0125] Option 2:

[0126] In some embodiments, aligning the first focusing mirror and the second focusing mirror along the first direction includes:

[0127] The positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are movable. When cutting the wafer to be cut, the positions of the first focusing mirror and the second focusing mirror are adjusted so that the first focusing mirror and the second focusing mirror are aligned along the first direction.

[0128] In some embodiments, the first cutting sub-device further comprises a first laser, and the second cutting sub-device further comprises a second laser;

[0129] The method of cutting the wafer to be cut from a first side by using a first cutting sub-device and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:

[0130] The first laser is used to provide the first focusing mirror with the first laser, thereby cutting the wafer to be cut from the first side; and the second laser is used to provide the second focusing mirror with the second laser, thereby cutting the wafer to be cut from the second side.

[0131] In some embodiments, the first cutting sub-device and the second cutting sub-device each further include a first laser;

[0132] The method of cutting the wafer to be cut from a first side by using a first cutting sub-device and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:

[0133] The first laser is used to provide the first focusing mirror with a first laser, thereby cutting the wafer to be cut from a first side; and the first laser is used to provide the second focusing mirror with a second laser, thereby cutting the wafer to be cut from a second side.

[0134] In some embodiments, the position of the carrier in the wafer cutting device is movable;

[0135] The method of cutting the wafer to be cut from a first side by using a first cutting sub-device and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:

[0136] When cutting the wafer to be cut, the carrier platform is moved to cut different positions of the wafer to be cut.

[0137] It should be understood that “one embodiment” or “an embodiment” mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, “in one embodiment” or “in an embodiment” appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present disclosure, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present disclosure. The serial numbers of the embodiments of the present disclosure are for description only and do not represent the advantages and disadvantages of the embodiments.

[0138] The methods disclosed in the several method embodiments provided in this disclosure can be arbitrarily combined without conflict to obtain new method embodiments.

[0139] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A wafer cutting device, comprising: A carrier, a first cutting sub-device, and a second cutting sub-device; wherein, The carrying platform is used to carry the wafer to be cut; The first cutting sub-device is used to cut the wafer to be cut from a first side; The second cutting sub-device is used to cut the wafer to be cut from the second side; the first side and the second side are two opposite sides of the supporting platform along a first direction, and the first direction is the thickness direction of the supporting platform.

2. The wafer cutting device according to claim 1, wherein: The first cutting sub-device and the second cutting sub-device are both used for laser cutting.

3. The wafer cutting device according to claim 1, wherein: The first cutting sub-device includes a first focusing mirror, which is located on the first side; the second cutting sub-device includes a second focusing mirror, which is located on the second side; when cutting the wafer to be cut, the first focusing mirror and the second focusing mirror are aligned along the first direction.

4. The wafer cutting device according to claim 3, wherein: The positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are immovable, and the first focusing mirror is aligned with the second focusing mirror along the first direction.

5. The wafer cutting device according to claim 3, wherein: The positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are movable. When the wafer to be cut is cut, the positions of the first focusing mirror and the second focusing mirror are adjusted so that the first focusing mirror and the second focusing mirror are aligned along the first direction.

6. The wafer cutting device according to claim 3, wherein: The first cutting sub-device further includes a first laser, and the first laser is used to provide a first laser to the first focusing mirror; The second cutting sub-device also includes a second laser, the second laser is used to The second focusing mirror provides the second laser light.

7. The wafer cutting device according to claim 3, wherein: The first cutting sub-device and the second cutting sub-device both further include a first laser; the first laser is used to provide a first laser to the first focusing mirror, and is used to provide a second laser to the second focusing mirror.

8. The wafer cutting device according to claim 6, wherein: The first laser is located at the first side, and the second laser is located at the second side; the first laser is aligned with the first focusing mirror along the first direction, and the second laser is aligned with the second focusing mirror along the first direction.

9. The wafer cutting device according to claim 6, wherein: The first laser and the second laser are both located on the first side, or the first laser and the second laser are both located on the second side; The first cutting sub-device further comprises at least one first reflecting mirror; the first reflecting mirror is used to introduce the first laser generated by the first laser into the first focusing mirror; The second cutting sub-device further includes at least one second reflecting mirror; the second reflecting mirror is used to guide the second laser generated by the second laser into the second focusing mirror.

10. The wafer cutting device according to claim 1, wherein: The carrying platform is provided with an opening, and when the wafer to be cut is placed on the carrying platform, the opening exposes the cutting path of the wafer to be cut.

11. The wafer cutting device according to claim 1, wherein: The position of the carrier in the wafer cutting device is movable. When the wafer to be cut is cut, the wafer to be cut is cut at different positions by moving the carrier.

12. A wafer cutting method, comprising: Place the wafer to be cut on the carrier; Using a first cutting sub-device to cut the wafer to be cut from a first side, and using a second cutting sub-device to cut the wafer to be cut from a second side; The first side and the The second sides are two opposite sides of the carrying platform along a first direction, and the first direction is a thickness direction of the carrying platform.

13. The method according to claim 12, wherein: The first cutting sub-device and the second cutting sub-device are both used for laser cutting.

14. The method according to claim 12, wherein: The first cutting sub-device comprises a first focusing mirror, and the first focusing mirror is located on the first side; the second cutting sub-device comprises a second focusing mirror, and the second focusing mirror is located on the second side; The method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device, comprises: When the wafer to be cut is cut, the first focusing mirror and the second focusing mirror are aligned along the first direction.

15. The method according to claim 14, wherein: The step of aligning the first focusing mirror and the second focusing mirror along the first direction comprises: The positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are immovable, the first focusing mirror and the second focusing mirror are aligned along the first direction, and the positions of the first focusing mirror and the second focusing mirror are not adjusted when the wafer to be cut is cut.

16. The method according to claim 14, wherein: The step of aligning the first focusing mirror and the second focusing mirror along the first direction comprises: The positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are movable. When the wafer to be cut is cut, the positions of the first focusing mirror and the second focusing mirror are adjusted so that the first focusing mirror is aligned with the second focusing mirror along the first direction.

17. The method according to claim 14, wherein: The first cutting sub-device further includes a first laser, and the second cutting sub-device further includes a second laser; The method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device, comprises: The first laser is used to provide the first focusing mirror with the first laser, so as to cut the wafer to be cut from the first side; and the second laser is used to provide the second focusing mirror with the second laser, so as to cut the wafer to be cut from the second side.

18. The method according to claim 14, wherein: The first cutting sub-device and the second cutting sub-device both further include a first laser; The method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device, comprises: The first laser is used to provide the first focusing mirror with a first laser, so as to cut the wafer to be cut from a first side; and the first laser is used to provide the second focusing mirror with a second laser, so as to cut the wafer to be cut from a second side.

19. The method according to claim 12, wherein: The position of the carrier platform in the wafer cutting device is movable; The method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device, comprises: When the wafer to be cut is cut, the carrier table is moved to cut different positions of the wafer to be cut.

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