Determination method and optimization method for interface deformation degree of gallium oxide crystal grown by edge-defined film-fed growth method

Abstract

The invention provides an edge-defined film-fed growth gallium oxide crystal interface deformation degree determination method and optimization method.The method comprises the steps that a target crystal interface is determined from a target computational domain, steady-state calculation is conducted on the target computational domain, and a temperature field where the target crystal interface is located is obtained; determining a target function corresponding to the target crystallization interface according to the temperature field; calculating a directional derivative of the target function in the coordinate axis direction of the three-dimensional rectangular coordinate system; determining a temperature change factor of the target grid surface according to the three-dimensional coordinate and the directional derivative of the target grid surface in the three-dimensional rectangular coordinate system; and determining the deformation degree of the target crystal interface according to the temperature change factor of each target grid surface. According to the embodiment of the invention, the deformation degree of the target crystal interface is determined by taking the temperature change factor of each target grid surface as a judgment basis, the subjective judgment of observers is not depended on, and the accuracy and the automation degree of determining the deformation degree of the crystal interface are improved.

Description

Technical Field

[0001] The invention relates to the technical field of crystal growth, and in particular to a method for determining and optimizing the degree of interface deformation of a gallium oxide crystal grown by a guided mode method. Background Art

[0002] Crystal growth is an important means of artificially obtaining crystal materials with special functions required by modern science and technology, such as semiconductor materials and artificial gemstones. The shape of the crystal interface is crucial to the stability of crystal growth. A flat crystal interface helps the crystal grow stably, while a severely deformed crystal interface will affect the quality and stability of crystal growth, and even interrupt the crystal growth process.

[0003] At present, in the numerical simulation process of the crystallization interface, the deformation degree of the crystallization interface is mainly judged by manually observing the shape of the crystallization interface or observing the shape of the isothermal surface near the crystallization interface. This method relies on the subjective judgment of the observer and lacks an objective and quantitative basis for judgment, resulting in a decrease in the accuracy and automation of the final determination of the deformation degree of the crystallization interface. Summary of the invention

[0004] The embodiments of the present invention provide a method for determining and optimizing the interface deformation degree of gallium oxide crystals grown by a guided mode method, which can solve the problem that in the process of determining the deformation degree of the crystallization interface in the related art, the accuracy and automation of the final determination of the deformation degree of the crystallization interface are reduced due to the lack of objective quantitative judgment basis.

[0005] In a first aspect, an embodiment of the present invention provides a method for determining the degree of interface deformation of a gallium oxide crystal grown by a guided mode method, the method comprising: A target crystallization interface is determined from a target calculation domain, and a steady-state calculation is performed on the target calculation domain to obtain a temperature field where the target crystallization interface is located; the target calculation domain is obtained by meshing a target geometric model, the target geometric model is a three-dimensional geometric model established in a three-dimensional rectangular coordinate system according to a crystal growth furnace and a gallium oxide crystal grown by the crystal growth furnace through a guided mode method, the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and a melt corresponding to the gallium oxide crystal; the target calculation domain includes at least two target mesh surfaces constituting the target crystallization interface; Determining an objective function corresponding to the target crystallization interface according to the temperature field; the objective function is used to establish an association relationship between the temperature of a target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface; Calculating the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system; Determining a temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative; The degree of deformation of the target crystallization interface is determined according to the temperature change factor of each target grid surface.

[0006] In a second aspect, an embodiment of the present invention provides a method for optimizing the interface of gallium oxide crystal grown by a guided mode method, the method comprising: Obtaining a deformation degree of a target crystallization interface determined by the method for determining the deformation degree of an interface of a gallium oxide crystal grown by a guided mode method as described in any one of the above items; the target crystallization interface is a crystallization interface determined from a target calculation domain; the target calculation domain is obtained by meshing a target geometric model, the target geometric model is a three-dimensional geometric model established in a three-dimensional rectangular coordinate system based on a crystal growth furnace and a gallium oxide crystal grown by the guided mode method using the crystal growth furnace, and the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and a melt corresponding to the gallium oxide crystal; According to the deformation degree of the target crystallization interface, a thermal resistance structure is arranged in the crystal growth furnace, so as to optimize the target crystallization interface by using the thermal resistance structure; The thermal resistance structure is arranged above a first plane where the lowest point of the gallium oxide crystal is located, and the first plane is parallel to a second plane formed by the x-axis and the y-axis of the three-dimensional rectangular coordinate system; the thermal resistance structure is a plate-like structure parallel to the first plane, and is used to block the crystal growth furnace from transferring heat in the x-axis direction and / or the y-axis direction.

[0007] In a third aspect, an embodiment of the present invention provides a device for determining the degree of interface deformation of a gallium oxide crystal grown by a guided mode method, the device comprising: a first determination module, configured to determine a target crystallization interface from a target calculation domain, and perform steady-state calculation on the target calculation domain to obtain a temperature field where the target crystallization interface is located; the target calculation domain is obtained by meshing a target geometric model, the target geometric model is a three-dimensional geometric model established in a three-dimensional rectangular coordinate system according to a crystal growth furnace and a gallium oxide crystal grown by the crystal growth furnace through a guided mode method, the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and a melt corresponding to the gallium oxide crystal; the target calculation domain includes at least two target mesh surfaces constituting the target crystallization interface; A second determination module is used to determine the objective function corresponding to the target crystallization interface according to the temperature field; the objective function is used to establish a correlation relationship between the temperature of the target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface; A calculation module, used for calculating the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system; A third determination module, configured to determine a temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative; The fourth determination module is used to determine the deformation degree of the target crystallization interface according to the temperature change factor of each target grid surface.

[0008] In a fourth aspect, an embodiment of the present invention provides an electronic device, comprising: a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to implement the method for determining the degree of interface deformation of a gallium oxide crystal grown by a guided mode method as described in any one of the above items when executing the computer program.

[0009] In a fifth aspect, an embodiment of the present invention provides a readable storage medium, wherein the readable storage medium stores a computer program, and when the computer program is executed by a processor, the method for determining the degree of interface deformation of a gallium oxide crystal grown by a guided mode method as described in any one of the above items is implemented.

[0010] The method for determining the degree of deformation of the interface of gallium oxide crystal grown by the guided mode method provided by the embodiment of the present invention determines the target function for establishing the correlation relationship between the temperature of the target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface according to the temperature field where the target crystallization interface is located, and calculates the directional derivative of the target function in the coordinate axis direction of the three-dimensional rectangular coordinate system, and the directional derivative quantifies the temperature gradient of the temperature of the target grid surface in the target crystallization interface in the coordinate axis direction of the three-dimensional rectangular coordinate system; further, based on the directional derivative and the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system, the temperature change factor of each target grid surface in the target crystallization interface is determined, and the thermal field uniformity of the target crystallization interface is objectively and quantitatively reflected through the temperature change factor; and the temperature change factor of each target grid surface is used as a judgment basis to determine the degree of deformation of the target crystallization interface, without relying on the subjective judgment of the observer, thereby improving the accuracy and automation of evaluating the degree of deformation of the crystallization interface, and providing an intuitive and reliable reference basis for the control direction of the crystal growth process. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative labor.

[0012] Figure 1It is a flowchart of the steps of a method for determining the degree of interface deformation of gallium oxide crystals grown by a guided mode method provided by an embodiment of the present invention; Figure 2 is a schematic structural diagram of a target geometric model provided by an embodiment of the present invention; Figure 3 is a schematic structural diagram of a target crystallization interface provided by an embodiment of the present invention; Figure 4 is a schematic diagram of a two-dimensional crystal interface deformation provided by an embodiment of the present invention; Figure 5 It is a flowchart of the steps of a method for optimizing the interface of gallium oxide crystal grown by a guided mode method provided by an embodiment of the present invention; Figure 6 is a schematic structural diagram of another target geometric model provided by an embodiment of the present invention; Figure 7 is a structural schematic diagram of another target geometric model provided by an embodiment of the present invention; Figure 8 It is a schematic diagram of the distribution of temperature variation factors of the target crystal interface before optimizing the interface of gallium oxide crystal grown by the guided mode method provided by an embodiment of the present invention; Fig. 9 It is a schematic diagram of the distribution of temperature variation factors of a target crystal interface after optimizing the interface of a gallium oxide crystal grown by a guided mode method by using a cover plate with a relatively small thickness as a thermal resistance structure provided by an embodiment of the present invention; Fig.10 It is a schematic diagram of the distribution of temperature variation factors of a target crystal interface after optimizing the interface of a gallium oxide crystal grown by a guided mode method by using a thick insulation layer as a thermal resistance structure according to an embodiment of the present invention; Fig.11 The present invention provides a logic block diagram of a device for determining the degree of interface deformation of a gallium oxide crystal grown by a guided mode method. DETAILED DESCRIPTION

[0013] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0014] Method Embodiment Reference Figure 1 , shows a flow chart of the steps of a method for determining the degree of interface deformation of gallium oxide crystals grown by a guided mode method of the present invention, the method specifically may include the following steps S101 to S105: The method for determining the degree of interface deformation of a gallium oxide crystal grown by a guided mode method provided in an embodiment of the present invention can be applied to any electronic device with a data processing function, which may include but is not limited to mobile terminals such as laptop computers, personal digital assistants (PDAs), handheld devices, computing devices, vehicle-mounted devices, wearable devices, and fixed terminals such as digital TVs and desktop computers.

[0015] Step S101, determining a target crystallization interface from a target calculation domain, and performing a steady-state calculation on the target calculation domain to obtain a temperature field where the target crystallization interface is located.

[0016] The target computational domain is obtained after meshing the target geometric model, the target geometric model is a three-dimensional geometric model established in a three-dimensional rectangular coordinate system based on a crystal growth furnace and a gallium oxide crystal grown by a guided mold method using the crystal growth furnace, the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and a melt corresponding to the gallium oxide crystal; the target computational domain includes at least two target mesh surfaces constituting the target crystallization interface.

[0017] It can be understood that the target crystallization interface is the solid-liquid interface between the melt corresponding to the gallium oxide crystal and the gallium oxide crystal in the crystal growth furnace during the process of growing the gallium oxide crystal by the guided mode method, that is, the three-dimensional non-axisymmetric crystallization interface. The degree of deformation of the gallium oxide crystal interface determined by the method for determining the degree of deformation of the gallium oxide crystal interface grown by the guided mode method provided in the embodiment of the present invention is the degree of deformation of the target crystallization interface.

[0018] Reference Figure 2 , showing a schematic diagram of the structure of a target geometric model of the present invention; the target geometric model includes a crystal growth furnace, a gallium oxide crystal grown by the crystal growth furnace through a guided mold method, a melt corresponding to the gallium oxide crystal, and a target crystallization interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal. The crystal growth furnace includes a mold and a heater; the heater is arranged around the crystal growth furnace, and the heater includes an upper heater and a lower heater. When current is passed through the induction coil corresponding to the heater, the heater can heat the inside of the growth furnace; a capillary slit is arranged in the mold, so that the melt corresponding to the gallium oxide crystal contained in the crucible at the bottom of the crystal growth furnace can rise to the top of the mold by capillary action, and form a thin film on the top of the mold and diffuse around, forming a liquid bridge between the crystal growth furnace and the gallium oxide crystal, wherein the upper surface of the liquid bridge is the solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, and the solid-liquid interface is the target crystallization interface.

[0019] It should be noted that the target crystallization interface may be a crystallization interface that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal; the target crystallization interface may also be a preset interface such as Figure 2 It can be understood that, when the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal is not deformed, the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal is also as follows: Figure 2 The plane shown.

[0020] In the case where the target crystallization interface is a crystallization interface that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the temperature of each target grid surface in the target crystallization interface is uniform; the temperature of each target grid surface in the target crystallization interface is uniform, which means that the temperature of each target grid surface is the same or the temperature difference between each target grid surface is less than a first preset threshold. Exemplarily, the first preset threshold is 0.5°C.

[0021] The crystal growth furnace is a growth furnace that can realize the growth of gallium oxide crystals by the guided mode method, and the gallium oxide crystals are plate-shaped crystals grown by the guided mode method using the crystal growth furnace.

[0022] In the process of determining the target geometric model in the embodiment of the present invention, the electronic device can first obtain the positional relationship and size information between the various components in the crystal growth furnace, the gallium oxide crystal, and the corresponding melt of the gallium oxide crystal; then, according to the positional relationship and size information, establish a three-dimensional geometric model in a three-dimensional rectangular coordinate system to obtain the target geometric model. Figure 2 As shown, the origin of the three-dimensional rectangular coordinate system is the center point of the bottom of the crystal growth furnace in the target geometric model, the direction of the z-axis of the three-dimensional rectangular coordinate system is the growth direction of the gallium oxide crystal, the direction of the x-axis of the three-dimensional rectangular coordinate system is the thickness direction of the gallium oxide crystal, and the direction of the y-axis of the three-dimensional rectangular coordinate system is the width direction of the gallium oxide crystal.

[0023] After determining the target geometric model, the electronic device can mesh the target geometric model to obtain a target computational domain corresponding to the target geometric model; the target computational domain includes computational grids obtained after meshing the target geometric model; wherein the number of computational grids in the target computational domain is at least 2.

[0024] Reference Figure 3 , showing a schematic structural diagram of a target crystallization interface of the present invention, such as Figure 3As shown, since the target geometric model includes the target crystallization interface, the computational grid of the target computational domain includes the target computational grid where the target crystallization interface is located, and the grid surface where the target crystallization interface is located in the target computational grid is the target grid surface. The number of target computational grids is at least 2, and the number of target grid surfaces constituting the target crystallization interface is also at least 2.

[0025] In an embodiment of the present invention, the electronic device executes step S101 to determine a target crystallization interface from a target calculation domain, specifically: the electronic device determines a plane at the solid-liquid interface between a gallium oxide crystal and a melt corresponding to the gallium oxide crystal in the target calculation domain as the target crystallization interface, and the target crystallization interface is parallel to a second plane formed by an x-axis and a y-axis in a three-dimensional rectangular coordinate system.

[0026] As another optional implementation, the electronic device may also determine a crystallization interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal in the target calculation domain that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal as the target crystallization interface; in this scenario, the target crystallization interface is a crystallization interface that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal determined through numerical simulation.

[0027] It can be understood that after the target crystallization interface is determined from the target calculation domain, the target mesh surface constituting the target crystallization interface in the target calculation domain is also determined.

[0028] After determining the target crystallization interface, the electronic device can first determine whether the current temperature field of the target calculation domain has reached an equilibrium state; when the current temperature field of the target calculation domain has reached an equilibrium state, the electronic device can directly determine the current temperature field as the temperature field where the target crystallization interface is located; when the current temperature field of the target calculation domain has not reached an equilibrium state, the electronic device performs a steady-state calculation on the target calculation domain to obtain the temperature field where the target crystallization interface is located.

[0029] Among them, the electronic device performs steady-state calculation on the target calculation domain to obtain the temperature field where the target crystallization interface is located, specifically: first, the steady-state calculation parameters required for the steady-state calculation of the target calculation domain are obtained; then, based on the steady-state calculation parameters, the target calculation domain is performed steady-state calculation to obtain the temperature field where the target crystallization interface is located.

[0030] Among them, the steady-state calculation parameters may include but are not limited to the thermophysical characteristic parameters of each component in the target geometric model, the control equations corresponding to each calculation grid in the target calculation domain, and the boundary conditions and source terms of the target calculation domain. The control equation is a physical model determined according to the physical process involved in the crystal growth furnace and used to describe the physical process involved in the crystal growth furnace. The control equation may include but is not limited to: energy conservation equation, momentum conservation equation, radiation transfer equation, electromagnetic induction control equation, mass conservation equation and Young's equation (Young-Laplace equation).

[0031] Step S102: determining an objective function corresponding to the target crystallization interface according to the temperature field.

[0032] Among them, the objective function is used to establish the correlation between the temperature of the target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface. Specifically, when the target crystallization interface is a preset horizontal plane and / or a crystallization interface infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the objective function can be a temperature field function of the temperature field where the target crystallization interface is located; when the target crystallization interface is a crystallization interface infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, since the temperature of each target grid surface in the target crystallization interface is uniform, the temperature parameter in the temperature field function of the temperature field where the target crystallization interface is located can also be used as a constant, and the temperature field function can be simplified to a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate.

[0033] In the embodiment of the present invention, the temperature of the target grid surface refers to the temperature of the center point of the target grid surface, and the three-dimensional coordinates of the target grid surface refer to the coordinates of the center point of the target grid surface in a three-dimensional rectangular coordinate system.

[0034] It can be understood that, when the target crystallization interface is a preset horizontal plane, if the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal is not deformed, the target crystallization interface is the crystallization interface of the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, and the temperature of each target grid surface in the target crystallization interface is uniform; if the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal is deformed, the target crystallization interface is not the crystallization interface of the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, and the temperature of each target grid surface in the target crystallization interface is uneven. In the embodiment of the present invention, regardless of whether the target crystallization interface is the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the deformation degree of the target crystallization interface can be determined by the method for determining the deformation degree of the interface of the gallium oxide crystal grown by the guided mode method provided in the embodiment of the present invention; when the target crystallization interface is not the crystallization interface of the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the deformation degree of the target crystallization interface reflects the deformation degree of the crystallization interface when the target crystallization interface is deformed to a crystallization interface infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal through numerical simulation.

[0035] Step S103: Calculate the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system.

[0036] Among them, the coordinate axes of the three-dimensional rectangular coordinate system include the x-axis, the y-axis and the z-axis, and the directional derivatives of the objective function in the coordinate axis directions of the three-dimensional rectangular coordinate system may include: the first directional derivative of the objective function in the x-axis direction, the second directional derivative of the objective function in the y-axis direction, and the third directional derivative of the objective function in the z-axis direction.

[0037] In an embodiment of the present invention, since the objective function establishes a correlation between the temperature of the target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface, the directional derivative of the objective function in the coordinate axis direction of the three-dimensional rectangular coordinate system is calculated through step 103, so that the directional derivative is used to reflect the temperature gradient of the temperature of the target grid surface in the target crystallization interface in the coordinate axis direction of the three-dimensional rectangular coordinate system.

[0038] Specifically, the first directional derivative of the objective function in the x-axis direction reflects the temperature gradient of the target grid surface in the x-axis direction; the second directional derivative of the objective function in the y-axis direction reflects the temperature gradient of the target grid surface in the y-axis direction; the third directional derivative of the objective function in the z-axis direction reflects the temperature gradient of the target grid surface in the z-axis direction.

[0039] When the temperature gradient of a target grid surface in the target crystallization interface in a certain coordinate axis direction is relatively large, it indicates that the heat transfer of the target grid in this direction is serious, and accordingly, the deformation degree of the target crystallization interface here is also relatively large.

[0040] Step S104: determining a temperature change factor of the target mesh surface according to the three-dimensional coordinates of the target mesh surface in the three-dimensional rectangular coordinate system and the directional derivative.

[0041] In the embodiment of the present invention, when the directional derivative of the target function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system is obtained through step S103, the electronic device can determine the temperature change factor of the target grid surface through step S104.

[0042] Specifically, when the directional derivative of the target function in the coordinate axis direction of the three-dimensional rectangular coordinate system includes the first directional derivative of the target function in the x-axis direction, the second directional derivative of the target function in the y-axis direction, and the third directional derivative of the target function in the z-axis direction, the electronic device can calculate the temperature change factor of any target mesh surface in the target crystallization interface according to the three-dimensional coordinates and directional derivatives of the target mesh surface in the three-dimensional rectangular coordinate system by the following formula: (1) in, represents the temperature change factor; Represents three-dimensional coordinates; represents the first directional derivative; represents the second directional derivative; Indicates the number of third-party guides.

[0043] It should be noted that It represents the temperature gradient of the center point of the target grid surface on the second plane formed by the x-axis and the y-axis. Since the temperature gradient is proportional to the heat flux density, It can also represent the heat flux density of the center point of the target grid surface in the direction of the temperature gradient parallel to the second plane. It can be understood that according to formula 1, When the value is large, it indicates that the temperature gradient of the target mesh surface in the x-axis direction is large; accordingly, When the value is large, it indicates that the temperature gradient of the target mesh surface in the y-axis direction is large.

[0044] As an example, see Figure 4 , showing a schematic diagram of a two-dimensional crystal interface deformation provided by the present invention; Figure 4 As shown in the figure, the deformation degree of the two-dimensional crystal interface 2 is significantly greater than that of the two-dimensional crystal interface 1, but the heat flux density q of the two-dimensional crystal interface 2 in the x-axis direction is x2However, it is smaller than the heat flux density q of the two-dimensional crystal interface 1 in the x-axis direction. x1 ; When the two-dimensional crystallization interface coincides with the isothermal surface, the direction of the heat flux is perpendicular to the isothermal surface, that is, the direction of the heat flux is perpendicular to the two-dimensional crystallization interface. Therefore, the deformation degree of the two-dimensional crystallization interface is directly related to the ratio of the heat flux in the x-axis direction to the heat flux in the z-axis direction. The greater the ratio of the heat flux in the x-axis direction to the heat flux in the z-axis direction, the more serious the deformation of the two-dimensional crystallization interface. Correspondingly, for the target crystallization interface in the three-dimensional coordinate system, the greater the ratio of the heat flux at the center point of the target grid surface in the temperature gradient direction parallel to the second plane to the heat flux at the center point of the target grid surface in the z-axis direction, the more serious the deformation of the target crystallization interface at the target grid surface.

[0045] The electronic device may determine the temperature change factor of each target grid surface in the target crystallization interface respectively through step S104.

[0046] Step S105 : determining the deformation degree of the target crystallization interface according to the temperature change factor of each target mesh surface.

[0047] In the embodiment of the present invention, since the deformation degree of the target crystallization interface is related to the ratio of the heat flux density of the center point of the target grid surface in the temperature gradient direction parallel to the second plane to the heat flux density of the center point of the target grid surface in the z-axis direction, the temperature change factor of the target grid surface determined by the electronic device through step S104 reflects the degree of change of the heat flux density of the target grid surface in the temperature gradient direction parallel to the second plane relative to the heat flux density of the target grid surface in the z-axis direction, that is, the temperature change factor of the target grid surface reflects the thermal field uniformity of the target grid surface in the thickness direction and the width direction of the gallium oxide crystal.

[0048] After determining the temperature variation factor of each target mesh surface in the target crystallization interface in step S104, the electronic device can determine the deformation degree of the target crystallization interface according to the temperature variation factor of each target mesh surface in the target crystallization interface.

[0049] Specifically, the temperature change factor of the target grid surface is positively correlated with the deformation degree of the target crystallization interface at the target grid surface. The larger the temperature change factor of the target grid surface, the greater the deformation degree of the target crystallization interface at the target grid surface.

[0050] In an embodiment of the present invention, the electronic device may first determine the maximum value of the temperature variation factor of the target mesh in the target crystallization interface; and then determine the deformation degree of the first target mesh surface according to the maximum value of the temperature variation factor.

[0051] Specifically, before step S105, the fluctuation range corresponding to the temperature change factor can be determined based on experience or experimental data, and the fluctuation range can be divided into different sub-ranges; then, the deformation degree corresponding to each sub-range can be determined. The deformation degree corresponding to the sub-range can be a text evaluation result such as "very serious deformation", "serious deformation", "normal deformation", "slight deformation", "no deformation", etc.; it can also be a specific deformation degree value such as "0", "1", "2", "3", etc.

[0052] In step S105, after determining the maximum value of the temperature variation factor of the target mesh in the target crystallization interface, the deformation degree corresponding to the sub-range where the maximum value of the temperature variation factor of the target mesh in the target crystallization interface is located can be determined as the deformation degree of the target crystallization interface.

[0053] As an example, the fluctuation range corresponding to the temperature change factor is 0 to 0.5; the fluctuation range is divided into different sub-ranges: [0, 0.1), [0.1, 0.2), [0.2, 0.3), [0.3, 0.4), [0.4, 0.5]; among them, the deformation degree corresponding to the sub-range [0, 0.1) is "no deformation", the deformation degree corresponding to the sub-range [0.1, 0.2) is "slight deformation", the deformation degree corresponding to the sub-range [0.2, 0.3) is "general deformation", the deformation degree corresponding to the sub-range [0.3, 0.4) is "serious deformation", and the deformation degree corresponding to the sub-range [0.4, 0.5] is "very serious deformation". In step S105, first, it is determined that the maximum value of the temperature change factor of the target grid in the target crystallization interface is 0.05; then, it is determined that the sub-range where the maximum value of the temperature change factor of the target grid in the target crystallization interface is located is [0,0.1), and the deformation degree corresponding to the sub-range [0,0.1) is "undeformed", then the deformation degree of the target crystallization interface is determined to be "undeformed".

[0054] In the embodiment of the present invention, the electronic device may include a display component and / or a voice component, and the electronic device may output the degree of deformation of the target crystallization interface determined in step S105 by way of text display and / or voice broadcast. Specifically, when the electronic device determines the degree of deformation of the target crystallization interface in step S105, the display component may be used to display the degree of deformation of the target crystallization interface, and / or the voice component may be used to voice broadcast the degree of deformation of the target crystallization interface.

[0055] Relevant personnel can control the growth process of gallium oxide crystals and / or optimize the structure of the crystal growth furnace according to the deformation degree of the target crystal interface output by the electronic device, thereby improving the flatness of the three-dimensional non-axisymmetric crystal interface between the gallium oxide crystals and the melt corresponding to the gallium oxide crystals, and improving the crystal quality and stability of the gallium oxide crystals grown by the guided mode method.

[0056] The method for determining the degree of deformation of the interface of gallium oxide crystal grown by the guided mode method provided in the embodiment of the present invention uses the temperature change factor of each target grid surface in the target crystallization interface as a judgment basis to determine the degree of deformation of the target crystallization interface, does not need to rely on the subjective judgment of the observer, improves the accuracy and automation of the degree of deformation of the crystallization interface, and provides an intuitive and reliable reference basis for the control direction of the crystal growth process.

[0057] In an optional embodiment, the objective function is a temperature field function corresponding to the target crystallization interface; the step S103 of calculating the directional derivative of the objective function in the coordinate axis direction of the three-dimensional rectangular coordinate system includes steps S1031 to S1034: Step S1031, calculating the first directional derivative of the temperature field function in the x-axis direction of the three-dimensional rectangular coordinate system.

[0058] Step S1032: Calculate the second directional derivative of the temperature field function in the y-axis direction of the three-dimensional rectangular coordinate system.

[0059] Step S1033: Calculate the third derivative of the temperature field function in the z-axis direction of the three-dimensional rectangular coordinate system.

[0060] Step S1034: determine the first directional derivative, the second directional derivative and the third directional derivative as directional derivatives of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system.

[0061] In an embodiment of the present invention, the target function corresponding to the target crystallization interface determined in step S102 is a temperature field function corresponding to the target crystallization interface; the temperature field function can be expressed as T (x, y, z), wherein T represents the temperature of the target grid surface in the target crystallization interface, x represents the x-axis coordinate of the target grid surface, y represents the y-axis coordinate of the target grid surface, and z represents the z-axis coordinate of the target grid surface.

[0062] In the process of calculating the directional derivative of the target function in the coordinate axis direction of the three-dimensional rectangular coordinate system, the electronic device can first calculate the first directional derivative of the temperature field function in the x-axis direction through steps S1031 to S1033 respectively. ), the second directional derivative of the temperature field function in the y-axis direction ( ) and the third derivative of the temperature field function in the z-axis direction ( ); then the first directional derivative, the second directional derivative and the third directional derivative are determined as the directional derivatives of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system.

[0063] It can be understood that steps S1031 to S1033 may be executed simultaneously or sequentially, and the embodiment of the present invention does not limit the execution order of steps S1031 to S1033.

[0064] In an optional embodiment, when the objective function is a temperature field function corresponding to a target crystallization interface, the step S104 determines the temperature change factor of the target mesh surface according to the three-dimensional coordinates of the target mesh surface in the three-dimensional rectangular coordinate system and the directional derivative, including step S1041: Step S1041: Determine the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative. The temperature change factor of the target grid surface is: (2) in, represents the temperature variation factor; represents the three-dimensional coordinates; represents the first directional derivative; represents the second directional derivative; Represents the number of third-party guides. Indicates the three-dimensional coordinates of the target mesh surface in the three-dimensional rectangular coordinate system Substitute into The obtained value.

[0065] In the embodiment of the present invention, in the scenario where the target function is the temperature field function corresponding to the target crystallization interface, no matter the target crystallization interface is a preset horizontal plane or a crystallization interface infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the electronic device can calculate the directional derivative of the target function in the coordinate axis direction of the three-dimensional rectangular coordinate system through steps S1031 to S1034, and determine the temperature change factor of the target grid surface through step S1041, while objectively and quantitatively reflecting the thermal field uniformity of the target crystallization interface through the temperature change factor, and determining the deformation degree of the target crystallization interface by using the temperature change factor of each target grid surface as a judgment basis, thereby improving the accuracy and automation of the deformation degree of the crystallization interface. No matter the target crystallization interface is a preset horizontal plane or a crystallization interface infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the temperature change factor of the target grid surface in the target crystallization interface can be determined, thereby expanding the application scope of the embodiment of the present invention.

[0066] In an optional embodiment, the step S102 of determining the objective function corresponding to the target crystallization interface according to the temperature field includes steps S1021 to S1023: Step S1021: Acquire the temperature of the target grid surface according to the temperature field.

[0067] Step S1022: when the temperature of each target grid surface in the target crystallization interface is uniform, determine the function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate according to the temperature field.

[0068] Step S1023: Determine a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate as a target function corresponding to the target crystallization interface.

[0069] In an embodiment of the present invention, when the target crystallization interface is a crystallization interface that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, since the temperature of each target grid surface in the target crystallization interface is uniform, the temperature parameter in the temperature field function of the temperature field where the target crystallization interface is located can be used as a constant, and the temperature field function can be simplified to a function of the z-axis coordinate of the target crystallization interface in a three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate, and the function of the z-axis coordinate of the target crystallization interface in a three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate is determined as the target function corresponding to the target crystallization interface. In this scenario, the target function can be expressed as z(x,y), where z represents the z-axis coordinate of the target grid surface in the three-dimensional rectangular coordinate system, x represents the x-axis coordinate of the target grid surface, and y represents the y-axis coordinate of the target grid surface.

[0070] Specifically, when the objective function corresponding to the target crystallization interface is a function of the z-axis coordinate of the target crystallization interface in a three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate, the electronic device can first obtain the temperature of the target grid surface according to the temperature field where the target crystallization interface is located, and then, when the temperatures of each target crystallization interface in the target crystallization interface are uniform, the temperatures of each target grid surface in the target crystallization interface are assumed to be equal, and the average value of the temperatures of each target grid surface is taken as the temperature of the target crystallization interface. Thus, the temperature of the target crystallization interface is regarded as a constant, and the temperature field function corresponding to the temperature field where the target crystallization interface is located can be simplified to a function of the z-axis coordinate of the target crystallization interface in a three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate; finally, the function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate is determined as the objective function corresponding to the target crystallization interface.

[0071] The electronic device obtains the temperature of the target grid surface as the temperature of the center point of each target grid surface in the target crystallization interface according to the temperature field where the target crystallization interface is located.

[0072] After the electronic device obtains the temperature of each target grid surface in the target crystallization interface through step S1021, the temperature of each target grid surface can be compared; when the temperatures of each target grid surface are the same or the temperature difference between each target grid surface is less than a first preset threshold, it is determined that the temperatures of each target grid surface in the target crystallization interface are uniform; when the temperatures of each target grid surface are not the same and the temperature difference between each target grid surface is greater than or equal to the first preset threshold, it is determined that the temperatures of each target grid surface in the target crystallization interface are not uniform; when the temperatures of each target grid surface in the target crystallization interface are uniform, the electronic device continues to execute steps S1022 to S1023 to determine the target function corresponding to the target crystallization interface; when the temperatures of each target grid surface in the target crystallization interface are not uniform, the electronic device can execute steps S1031 to S1034 to calculate the directional derivative of the target function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system, and execute step S1041 to determine the temperature change factor of the target grid surface.

[0073] In an optional embodiment, the step S103 of calculating the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system includes steps S1035 to S1037: Step S1035: Calculate the fourth directional derivative of the objective function in the x-axis direction of the three-dimensional rectangular coordinate system.

[0074] Step S1036: Calculate the fifth directional derivative of the objective function in the y-axis direction of the three-dimensional rectangular coordinate system.

[0075] Step S1037: determine the fourth directional derivative and the fifth directional derivative as directional derivatives of the objective function in the direction of the coordinate axes of the three-dimensional rectangular coordinate system.

[0076] In the embodiment of the present invention, when the target function corresponding to the target crystallization interface is a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate, the electronic device can calculate the directional derivatives of the target function in the coordinate axis direction of the three-dimensional rectangular coordinate system through steps S1035 to S1037; in this scenario, the directional derivatives include: the fourth directional derivative ( ) and the fifth directional derivative of the objective function in the y-axis direction of the three-dimensional rectangular coordinate system ( ).

[0077] Specifically, the electronic device first calculates the fourth directional derivative of the target function in the x-axis direction of the three-dimensional rectangular coordinate system and the fifth directional derivative of the target function in the y-axis direction of the three-dimensional rectangular coordinate system through steps S1035 and S1036 respectively; and then determines the fourth directional derivative and the fifth directional derivative as the directional derivatives of the target function in the coordinate axis directions of the three-dimensional rectangular coordinate system.

[0078] It can be understood that step S1035 and step S1036 can be executed simultaneously or sequentially, and the embodiment of the present invention does not limit the execution order of step S1035 and step S1036.

[0079] In an optional embodiment, when the target function corresponding to the target crystallization interface is a function of the z-axis coordinate of the target crystallization interface in a three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate, step S104 determines the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative, including step S1042: Step S1042: Determine the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative. The temperature change factor of the target grid surface is: (3) in, represents the fourth directional derivative; represents the fifth directional derivative. Indicates the three-dimensional coordinates of the target mesh surface in the three-dimensional rectangular coordinate system Substitute into The obtained value.

[0080] It should be noted that, in a scenario where the target function corresponding to the target crystallization interface is a function of the z-axis coordinate of the target crystallization interface in a three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate, that is, the target crystallization interface is a crystallization interface that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the electronic device can also determine the target function corresponding to the target crystallization interface through steps S1021 to S1023, determine the directional derivative of the target function in the coordinate axis direction of the three-dimensional rectangular coordinate system through steps S1035 to S1037, and determine the temperature change factor of the target grid surface through step S1042, thereby providing a variety of optional implementation methods for different application scenarios and improving the feasibility of the embodiments of the present invention.

[0081] In an optional embodiment, the step S105 of determining the deformation degree of the target crystallization interface according to the temperature change factor of each target mesh surface includes steps S1051 to S1052: Step S1051: Determine a thermal field uniformity evaluation result of the target crystallization interface according to the temperature change factor.

[0082] Step S1052: Determine the deformation degree of the target crystallization interface according to the thermal field uniformity evaluation result.

[0083] In an embodiment of the present invention, when the electronic device determines the deformation degree of the target crystallization interface according to the temperature change factor of each target grid surface, it can also first determine the thermal field uniformity evaluation result of the target crystallization interface according to the temperature change factor, and then determine the deformation degree of the target crystallization interface according to the thermal field uniformity evaluation result.

[0084] Among them, the thermal field uniformity evaluation result is used to reflect the uniformity of temperature distribution of each target grid surface in the target crystallization interface; the thermal field uniformity is negatively correlated with the temperature change factor. When the temperature change factor of the target grid surface is larger, the temperature change of the target grid surface is more drastic, and the temperature distribution of each target grid surface in the target crystallization interface is more uneven, that is, the thermal field uniformity of the target crystallization interface is worse.

[0085] In the embodiment of the present invention, an evaluation threshold corresponding to the temperature change factor may be preset, and the thermal field uniformity evaluation result of the target crystallization interface may be determined based on the magnitude relationship between the temperature change factor of the target grid surface and the evaluation threshold.

[0086] Specifically, the evaluation threshold corresponding to the temperature change factor includes a first evaluation threshold and a second evaluation threshold, and the first evaluation threshold is greater than the second evaluation threshold; when the electronic device obtains the temperature change factor of each target grid surface through step S104, the temperature change factor of the target grid surface can be compared with the first evaluation threshold and the second evaluation threshold. When the temperature change factor is greater than or equal to the first evaluation threshold, the thermal field uniformity evaluation result is determined to be poor thermal field uniformity of the target crystallization interface; when the temperature change factor is less than the first evaluation threshold and greater than or equal to the second evaluation threshold, the thermal field uniformity evaluation result is determined to be average thermal field uniformity of the target crystallization interface; when the temperature change factor is less than the second evaluation threshold, the thermal field uniformity evaluation result is determined to be good thermal field uniformity of the target crystallization interface. Exemplarily, the first evaluation threshold is 0.2 and the second evaluation threshold is 0.05.

[0087] It should be noted that the uniformity of the thermal field is related to the degree of deformation of the target crystallization interface; the better the uniformity of the thermal field of the target crystallization interface, the smoother the temperature change of each target grid surface in the target crystallization interface, which means that the smaller the ratio of the temperature gradient of the target grid surface in the x-axis or y-axis direction to the temperature gradient in the z-axis direction, the smaller the deformation degree of the target crystallization interface.

[0088] In an embodiment of the present invention, a mapping relationship between the thermal field uniformity evaluation result and the deformation degree of the crystallization interface can also be established, and the mapping relationship can be stored in a preset storage area accessible to the electronic device. In step S1052, the electronic device can obtain the mapping relationship between the thermal field uniformity evaluation result and the deformation degree of the crystallization interface from the preset storage area, and determine the deformation degree corresponding to the thermal field uniformity evaluation result of the target crystallization interface determined in step S1051 based on the mapping relationship between the thermal field uniformity evaluation result and the deformation degree of the crystallization interface, and determine the deformation degree as the deformation degree of the target crystallization interface.

[0089] Exemplarily, in the mapping relationship between the thermal field uniformity evaluation result and the degree of deformation of the crystallization interface, the degree of deformation corresponding to the thermal field uniformity evaluation result "poor thermal field uniformity" is "severe deformation", the degree of deformation corresponding to the thermal field uniformity evaluation result "average thermal field uniformity" is "average deformation", and the degree of deformation corresponding to the thermal field uniformity evaluation result "good thermal field uniformity" is "slight deformation". In the case where the thermal field uniformity evaluation result of the target crystallization interface determined in step S1051 is that the thermal field uniformity of the target crystallization interface is good, the electronic device can determine that the deformation degree of the target crystallization interface is slight deformation of the target crystallization interface according to the mapping relationship between the thermal field uniformity evaluation result and the degree of deformation of the crystallization interface.

[0090] The method for determining the degree of deformation of the interface of gallium oxide crystal grown by the guided mode method provided in the embodiment of the present invention uses the temperature change factor of each target grid surface in the target crystallization interface as a judgment basis to determine the degree of deformation of the target crystallization interface, does not need to rely on the subjective judgment of the observer, improves the accuracy and automation of the degree of deformation of the crystallization interface, and provides an intuitive and reliable reference basis for the control direction of the crystal growth process.

[0091] Reference Figure 5 , shows a flow chart of the steps of a method for optimizing the interface of gallium oxide crystal grown by a guided mode method of the present invention, the method specifically may include the following steps S201 to S202: Step S201, obtaining the deformation degree of the target crystallization interface.

[0092] Among them, the target crystallization interface is a crystallization interface determined from a target calculation domain; the target calculation domain is obtained after meshing a target geometric model, the target geometric model is a three-dimensional geometric model established in a three-dimensional rectangular coordinate system based on a crystal growth furnace and a gallium oxide crystal grown by a guided mode method using the crystal growth furnace, and the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and a melt corresponding to the gallium oxide crystal.

[0093] Step S202: according to the deformation degree of the target crystallization interface, a thermal resistance structure is arranged in the crystal growth furnace, so as to optimize the target crystallization interface by using the thermal resistance structure.

[0094] The thermal resistance structure is arranged above a first plane where the lowest point of the gallium oxide crystal is located, and the first plane is parallel to a second plane formed by the x-axis and the y-axis of the three-dimensional rectangular coordinate system; the thermal resistance structure is a plate-like structure parallel to the first plane, and is used to block the crystal growth furnace from transferring heat in the x-axis direction and / or the y-axis direction.

[0095] In the embodiment of the present invention, the deformation degree of the target crystallization interface acquired in step S201 is the deformation degree of the target crystallization interface determined by the electronic device through the method for determining the deformation degree of the interface of gallium oxide crystal grown by the guided mode method as described in any one of the above items.

[0096] After the electronic device determines and outputs the deformation degree of the target crystallization interface by the method for determining the deformation degree of the interface of gallium oxide crystal grown by the guided mode method as described in any of the above items, relevant personnel can obtain the deformation degree of the target crystallization interface output by the electronic device, and execute step S202 to optimize the structure of the crystal growth furnace according to the deformation degree of the target crystallization interface.

[0097] It can be understood that the greater the deformation degree of the target crystallization interface, the greater the ratio of the temperature gradient of the temperature change factor of the target grid surface in the target crystallization interface in the x-axis direction and / or the y-axis direction to the temperature gradient in the z-axis direction, that is, the greater the ratio of the heat flux density of the temperature change factor of the target grid surface in the target crystallization interface in the x-axis direction and / or the y-axis direction to the heat flux density in the z-axis direction, that is, the heat transfer of the target grid surface in the target crystallization interface in the x-axis direction and / or the y-axis direction is serious, which means that the greater the gradient of the target crystallization interface in the z-axis direction or the greater the deformation. In the embodiment of the present invention, a thermal resistance structure is set in the crystal growth furnace according to the deformation degree of the target crystallization interface, so as to use the thermal resistance structure to block the heat transfer of the crystal growth furnace in the x-axis direction and / or the y-axis direction of the three-dimensional rectangular coordinate system, thereby reducing the heat flux density of the crystal growth furnace in the x-axis direction and / or the y-axis direction of the three-dimensional rectangular coordinate system, thereby achieving the purpose of reducing the deformation degree of the target crystallization interface and optimizing the target crystallization interface.

[0098] It should be noted that, in the embodiment of the present invention, optimizing the target crystallization interface refers to reducing the degree of deformation of the target crystallization interface and improving the flatness of the target crystallization interface.

[0099] Reference Figure 6 , shows a structural schematic diagram of another target geometric model of the present invention, the thermal resistance structure is a plate-like structure arranged above the first plane where the lowest point of the gallium oxide crystal is located and parallel to the first plane, and the first plane is parallel to the second plane formed by the x-axis and y-axis of the three-dimensional rectangular coordinate system.

[0100] It should be noted that if Figure 6 As shown, since heaters are arranged around the crystal growth furnace, the heat flux of the target crystallization interface along the x-axis direction and the y-axis direction cannot be dissipated along the x-axis direction and the y-axis direction, and can only be dissipated from the z-axis direction. In the embodiment of the present invention, a plate-like structure parallel to the first plane is arranged above the first plane where the lowest point of the gallium oxide crystal is located to block the heat transfer along the z-axis direction in the crystal growth furnace, thereby achieving the purpose of reducing the heat flux density of the crystal growth furnace in the x-axis direction and / or the y-axis direction of the three-dimensional rectangular coordinate system and reducing the deformation degree of the target crystallization interface.

[0101] It should be noted that the thermal resistance structure can be arranged at any position above the first plane where the lowest point of the gallium oxide crystal in the crystal growth furnace is located, that is, the distance between the thermal resistance structure and the first plane is greater than 0.

[0102] In the embodiment of the present invention, the thickness of the thermal resistance structure and / or the distance between the thermal resistance structure and the first plane can be adjusted according to the deformation degree of the target crystallization interface to obtain a relatively flat crystallization interface. Specifically, when the deformation degree of the target crystallization interface is large, the thickness of the thermal resistance structure can be increased and / or the distance between the thermal resistance structure and the first plane can be reduced; when the deformation degree of the target crystallization interface is small, the thickness of the thermal resistance structure can be reduced and / or the distance between the thermal resistance structure and the first plane can be increased.

[0103] For example, when the deformation degree of the target crystallization interface is small, referring to Figure 6 , a thin cover plate can be set in the crystal growth furnace as a thermal resistance structure; in the case of a large degree of deformation of the target crystal interface, refer to Figure 7 , shows a structural schematic diagram of another target geometric model of the present invention, and a thicker insulation layer can be set in the crystal growth furnace as a thermal resistance structure.

[0104] It should be noted that, when the deformation degree of the target crystal interface is relatively large, a thick insulation layer is provided in the crystal growth furnace as a thermal resistance structure, and the upper heater in the crystal growth furnace can also be removed.

[0105] Reference Figure 8 , showing a schematic diagram of the temperature change factor distribution of the target crystal interface before optimizing the interface of the gallium oxide crystal grown by the guided mode method of the present invention; referring to Fig. 9 , showing a schematic diagram of the temperature change factor distribution of the target crystal interface after optimizing the interface of gallium oxide crystal grown by the guided mode method using a cover plate with a smaller thickness as a thermal resistance structure of the present invention; referring to Fig.10 , showing a schematic diagram of the temperature change factor distribution of the target crystal interface after optimizing the interface of gallium oxide crystal grown by the guided mode method by using a thicker insulation layer as a thermal resistance structure of the present invention; Figures 8 to 10 As shown, by increasing the thickness of the thermal resistance structure, the value of the temperature change factor in the target crystallization interface can be reduced, the thermal field uniformity of the target crystallization interface can be improved, and then the deformation degree of the target crystallization interface can be reduced.

[0106] The method for optimizing the interface of gallium oxide crystals grown by the guided mold method provided in the embodiment of the present invention sets a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystallization interface, so as to optimize the target crystallization interface by using the thermal resistance structure, which is beneficial to accurately control the shape of the crystallization interface between the melt corresponding to the gallium oxide crystal and the gallium oxide crystal during the growth process of the gallium oxide crystal, so as to obtain a relatively flat crystallization interface, thereby facilitating the stable growth of the gallium oxide crystal, and improving the crystal quality of the gallium oxide crystal grown by the guided mold method using the crystal growth furnace.

[0107] In an optional embodiment, the step S202 of setting a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystallization interface includes steps S2021 to S2023: Step S2021: when the deformation degree of the target crystallization interface is greater than a first deformation threshold, obtain a first difference between the deformation degree of the target crystallization interface and the first deformation threshold.

[0108] Step S2022: Determine a target thickness of the thermal resistance structure according to the first difference.

[0109] Step S2023: setting a thermal resistance structure of the target thickness in the crystal growth furnace.

[0110] In an embodiment of the present invention, in the process of setting a thermal resistance structure in a crystal growth furnace according to the deformation degree of the target crystallization interface, the thickness of the thermal resistance structure can be adjusted according to the deformation degree of the target crystallization interface to obtain a relatively flat crystallization interface.

[0111] Specifically, the deformation degree of the target crystallization interface obtained in step S201 is the deformation degree value of the target crystallization interface. When the deformation degree of the target crystallization interface is greater than the first deformation threshold, a first difference between the deformation degree of the target crystallization interface and the first deformation threshold can be calculated, and the target thickness of the thermal resistance structure set in the crystal growth furnace is determined according to the first difference.

[0112] The first deformation threshold is the degree of deformation of the crystallization interface that requires adjustment of the shape of the target crystallization interface; illustratively, the first deformation threshold may be 0.

[0113] Before step S2022, the thickness of the thermal resistance structure corresponding to different differences between the degree of deformation of the crystallization interface and the first deformation threshold can be determined in advance through a large number of experiments, and a thermal resistance structure thickness comparison table can be constructed based on the thickness of the thermal resistance structure corresponding to different differences between the degree of deformation of the crystallization interface and the first deformation threshold. In step S2022, relevant personnel can determine the thickness of the thermal resistance structure corresponding to the first difference obtained in step S2021 based on the thermal resistance structure thickness comparison table, and determine the thickness of the thermal resistance structure corresponding to the first difference as the target thickness of the thermal resistance structure.

[0114] It should be noted that the thickness of the thermal resistance structure corresponding to the difference between the deformation degree of the crystallization interface and the first deformation threshold in the thermal resistance structure thickness comparison table is specifically: the thickness of the thermal resistance structure when the crystallization interface is adjusted to a plane or a near-plane while the distance between the thermal resistance structure and the first plane remains unchanged.

[0115] After determining the target thickness of the thermal resistance structure, the thermal resistance structure of the target thickness may be set in a crystal growth furnace according to the target thickness.

[0116] In an optional embodiment, the step S202 of setting a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystallization interface includes steps S2024 to S2026: Step S2024: when the deformation degree of the target crystallization interface is greater than a first deformation threshold, obtain a first difference between the deformation degree of the target crystallization interface and the first deformation threshold.

[0117] Step S2025: determining the distance between the thermal resistance structure and the first plane according to the first difference.

[0118] Step S2026: Setting a thermal resistance structure in the crystal growth furnace according to the distance between the thermal resistance structure and the first plane.

[0119] In an embodiment of the present invention, in the process of setting a thermal resistance structure in a crystal growth furnace according to the deformation degree of the target crystallization interface, the distance between the thermal resistance structure and the first plane can be adjusted according to the deformation degree of the target crystallization interface to obtain a relatively flat crystallization interface.

[0120] Specifically, the deformation degree of the target crystallization interface obtained in step S201 is the deformation degree value of the target crystallization interface. When the deformation degree of the target crystallization interface is greater than the first deformation threshold, a first difference between the deformation degree of the target crystallization interface and the first deformation threshold can be calculated, and the distance between the thermal resistance structure and the first plane can be determined according to the first difference.

[0121] Before step S2025, the distance between the thermal resistance structure and the first plane corresponding to different differences between the degree of deformation of the crystallization interface and the first deformation threshold can be determined in advance through a large number of experiments, and a thermal resistance structure setting height comparison table can be constructed according to the distance between the thermal resistance structure and the first plane corresponding to different differences between the degree of deformation of the crystallization interface and the first deformation threshold. In step S2025, relevant personnel can determine the distance between the thermal resistance structure and the first plane corresponding to the first difference obtained in step S2024 according to the thermal resistance structure setting height comparison table.

[0122] It should be noted that the distance between the thermal resistance structure and the first plane corresponding to the difference between the deformation degree of the crystallization interface and the first deformation threshold in the thermal resistance structure setting height comparison table is specifically: when the thickness of the thermal resistance structure remains unchanged, the distance between the thermal resistance structure and the first plane when the crystallization interface is adjusted to a plane or a near-plane.

[0123] After determining the distance between the thermal resistance structure and the first plane, the thermal resistance structure may be arranged in the crystal growth furnace according to the distance between the thermal resistance structure and the first plane.

[0124] The method for optimizing the interface of gallium oxide crystals grown by the guided mold method provided in the embodiment of the present invention adjusts the thickness of the thermal resistance structure arranged in the crystal growth furnace, or adjusts the distance between the thermal resistance structure and the first plane, according to the deformation degree of the target crystallization interface, which is beneficial to accurately control the crystallization interface between the melt corresponding to the gallium oxide crystal and the gallium oxide crystal during the growth of the gallium oxide crystal, thereby obtaining a relatively flat crystallization interface, which is beneficial to the stable growth of the gallium oxide crystal, and improves the crystal quality of the gallium oxide crystal grown by the guided mold method using the crystal growth furnace. In addition, the optimization method of the crystal growth furnace in the embodiment of the present invention is simple and easy to operate, thereby improving the feasibility of the embodiment of the present invention.

[0125] Device Embodiment The embodiment of the present invention further provides a device for determining the degree of interface deformation of gallium oxide crystals grown by a guided mode method. Fig.11 FIG. 4 shows a logic block diagram of a device for determining the degree of interface deformation of gallium oxide crystal grown by a guided mode method according to an embodiment of the present invention. Fig.11 As shown, the device may include: The first determination module 1101 is used to determine a target crystallization interface from a target calculation domain, and perform steady-state calculation on the target calculation domain to obtain a temperature field where the target crystallization interface is located; the target calculation domain is obtained by meshing a target geometric model, the target geometric model is a three-dimensional geometric model established in a three-dimensional rectangular coordinate system according to a crystal growth furnace and a gallium oxide crystal grown by the crystal growth furnace through a guided mode method, the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and a melt corresponding to the gallium oxide crystal; the target calculation domain includes at least two target mesh surfaces constituting the target crystallization interface; The second determination module 1102 is used to determine the objective function corresponding to the target crystallization interface according to the temperature field; the objective function is used to establish the correlation relationship between the temperature of the target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface; A calculation module 1103, used for calculating the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system; A third determination module 1104 is used to determine a temperature change factor of the target mesh surface according to the three-dimensional coordinates of the target mesh surface in the three-dimensional rectangular coordinate system and the directional derivative; The fourth determination module 1105 is used to determine the deformation degree of the target crystallization interface according to the temperature change factor of each target grid surface.

[0126] Optionally, the objective function is a temperature field function corresponding to the target crystallization interface; and the calculation module comprises: A first calculation submodule, used for calculating a first directional derivative of the temperature field function in the x-axis direction of the three-dimensional rectangular coordinate system; A second calculation submodule, used for calculating a second directional derivative of the temperature field function in the y-axis direction of the three-dimensional rectangular coordinate system; A third calculation submodule, used for calculating a third derivative of the temperature field function in the z-axis direction of the three-dimensional rectangular coordinate system; The first determination submodule is used to determine the first directional derivative, the second directional derivative and the third directional derivative as directional derivatives of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system.

[0127] Optionally, the third determining module includes: The second determination submodule is used to determine the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative, and the temperature change factor of the target grid surface is: , in, represents the temperature variation factor; represents the three-dimensional coordinates; represents the first directional derivative; represents the second directional derivative; Represents the number of third-party guides.

[0128] Optionally, the second determining module includes: An acquisition submodule, used for acquiring the temperature of the target grid surface according to the temperature field; A third determination submodule is used to determine, when the temperature of each target grid surface in the target crystallization interface is uniform, a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate according to the temperature field; The fourth determination submodule is used to determine the function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate as the target function corresponding to the target crystallization interface.

[0129] Optionally, the calculation module includes: a fourth calculation submodule, configured to calculate a fourth directional derivative of the objective function in the x-axis direction of the three-dimensional rectangular coordinate system; a fifth calculation submodule, configured to calculate a fifth directional derivative of the objective function in the y-axis direction of the three-dimensional rectangular coordinate system; The fifth determining submodule is used to determine the fourth directional derivative and the fifth directional derivative as directional derivatives of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system.

[0130] Optionally, the third determining module includes: The sixth determination submodule is used to determine the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative, and the temperature change factor of the target grid surface is: , in, represents the fourth directional derivative; represents the fifth directional derivative.

[0131] Optionally, the fourth determining module includes: A seventh determination submodule is used to determine the thermal field uniformity evaluation result of the target crystallization interface according to the temperature change factor; The eighth determination submodule is used to determine the deformation degree of the target crystallization interface according to the thermal field uniformity evaluation result.

[0132] As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0133] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0134] An embodiment of the present invention further provides an electronic device, comprising a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to implement the method for determining the interface deformation degree of gallium oxide crystals grown by the guided mode method as described above when executing the computer program.

[0135] An embodiment of the present application further provides a readable storage medium, wherein the readable storage medium stores a computer program, and when the computer program is executed by a processor, the method for determining the degree of interface deformation of gallium oxide crystals grown by the guided mode method as described above is implemented.

[0136] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0137] It will be appreciated by those skilled in the art that the embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the embodiments of the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the embodiments of the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0138] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0139] These computer program instructions may also be stored in a computer readable memory capable of directing a computer or other programmable data processing terminal device to operate in a predictable manner, so that the instructions stored in the computer readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0140] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0141] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0142] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0143] The above is a detailed introduction to a method for determining and optimizing the interface deformation degree of gallium oxide crystals grown by a guided mode method provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A method for determining the degree of interface deformation of gallium oxide crystals grown by guided mode method, characterized in that: The method comprises: A target crystallization interface is determined from a target calculation domain, and a steady-state calculation is performed on the target calculation domain to obtain a temperature field where the target crystallization interface is located; the target calculation domain is obtained by meshing a target geometric model, the target geometric model is a three-dimensional geometric model established in a three-dimensional rectangular coordinate system according to a crystal growth furnace and a gallium oxide crystal grown by the crystal growth furnace through a guided mode method, the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and a melt corresponding to the gallium oxide crystal; the target calculation domain includes at least two target mesh surfaces constituting the target crystallization interface; Determining an objective function corresponding to the target crystallization interface according to the temperature field; the objective function is used to establish an association relationship between the temperature of a target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface; Calculating the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system; Determining a temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative; The degree of deformation of the target crystallization interface is determined according to the temperature change factor of each target grid surface.

2. The method according to claim 1, characterized in that The objective function is a temperature field function corresponding to the target crystallization interface; and calculating the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system includes: Calculating a first directional derivative of the temperature field function in the x-axis direction of the three-dimensional rectangular coordinate system; Calculating a second directional derivative of the temperature field function in the y-axis direction of the three-dimensional rectangular coordinate system; Calculating a third derivative of the temperature field function in the z-axis direction of the three-dimensional rectangular coordinate system; The first directional derivative, the second directional derivative, and the third directional derivative are determined as directional derivatives of the objective function in the directions of coordinate axes of the three-dimensional rectangular coordinate system.

3. The method according to claim 2, characterized in that Determining the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative includes: According to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative, the temperature change factor of the target grid surface is determined, and the temperature change factor of the target grid surface is: , in, represents the temperature variation factor; represents the three-dimensional coordinates; represents the first directional derivative; represents the second directional derivative; Represents the number of third-party guides.

4. The method according to claim 1, characterized in that Determining the objective function corresponding to the target crystallization interface according to the temperature field includes: According to the temperature field, obtaining the temperature of the target grid surface; In the case where the temperature of each target grid surface in the target crystallization interface is uniform, determining a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate according to the temperature field; A function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate is determined as a target function corresponding to the target crystallization interface.

5. The method according to claim 4, characterized in that The calculating the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system includes: Calculating a fourth directional derivative of the objective function in the x-axis direction of the three-dimensional rectangular coordinate system; Calculating a fifth directional derivative of the objective function in the y-axis direction of the three-dimensional rectangular coordinate system; The fourth directional derivative and the fifth directional derivative are determined as directional derivatives of the objective function in the directions of coordinate axes of the three-dimensional rectangular coordinate system.

6. The method according to claim 5, characterized in that Determining the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative includes: According to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative, the temperature change factor of the target grid surface is determined, and the temperature change factor of the target grid surface is: ， in, represents the fourth directional derivative; represents the fifth directional derivative.

7. The method according to claim 1, characterized in that Determining the deformation degree of the target crystallization interface according to the temperature change factor of each target grid surface includes: Determining a thermal field uniformity evaluation result of the target crystallization interface according to the temperature change factor; The degree of deformation of the target crystallization interface is determined according to the thermal field uniformity evaluation result.

8. A method for optimizing the interface of gallium oxide crystal grown by guided mode method, characterized in that: The method comprises: Obtaining the degree of deformation of a target crystallization interface determined by the method for determining the degree of deformation of an interface of a gallium oxide crystal grown by a guided mode method according to any one of claims 1 to 7; the target crystallization interface is a crystallization interface determined from a target calculation domain; the target calculation domain is obtained by meshing a target geometric model, the target geometric model is a three-dimensional geometric model established in a three-dimensional rectangular coordinate system based on a crystal growth furnace and a gallium oxide crystal grown by a guided mode method using the crystal growth furnace, and the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and a melt corresponding to the gallium oxide crystal; According to the deformation degree of the target crystallization interface, a thermal resistance structure is arranged in the crystal growth furnace, so as to optimize the target crystallization interface by using the thermal resistance structure; The thermal resistance structure is arranged above a first plane where the lowest point of the gallium oxide crystal is located, and the first plane is parallel to a second plane formed by the x-axis and the y-axis of the three-dimensional rectangular coordinate system; the thermal resistance structure is a plate-like structure parallel to the first plane, and is used to block the crystal growth furnace from transferring heat in the x-axis direction and / or the y-axis direction.

9. The method according to claim 8, characterized in that The step of setting a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystal interface comprises: When the deformation degree of the target crystallization interface is greater than a first deformation threshold, obtaining a first difference between the deformation degree of the target crystallization interface and the first deformation threshold; determining a target thickness of the thermal resistance structure according to the first difference; A heat resistance structure having the target thickness is arranged in the crystal growth furnace.

10. The method according to claim 8, characterized in that The step of setting a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystal interface comprises: When the deformation degree of the target crystallization interface is greater than a first deformation threshold, obtaining a first difference between the deformation degree of the target crystallization interface and the first deformation threshold; determining a distance between the thermal resistance structure and the first plane according to the first difference; A thermal resistance structure is arranged in the crystal growth furnace according to the distance between the thermal resistance structure and the first plane.

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