Antimony-phosphorus co-doped crystal pulling evaporation capacity prediction method, device, equipment and product

Abstract

The invention relates to an antimony-phosphorus co-doped crystal pulling evaporation capacity prediction method, device, equipment and product. The method comprises the following steps: obtaining a first model and a second model of an antimony-phosphorus co-doped single crystal furnace in a preset state; the first model comprises an incidence relation between the antimony evaporation capacity and the antimony evaporation constant in the straight-pulling equal-diameter stage; the second model comprises an association relationship between the antimony evaporation capacity and the antimony concentration after antimony evaporation in the straight pulling and discharging stage, and the antimony concentration after antimony evaporation is associated with an antimony evaporation constant; according to a first incidence relation between the antimony evaporation constant and the weight of excess materials in the single crystal furnace and a first model, obtaining a first predicted antimony evaporation capacity in a straight-pulling equal-diameter stage; according to a second incidence relation between the antimony evaporation constant and the lead-and-discharge duration in the single crystal furnace and a second model, obtaining a second predicted antimony evaporation capacity in the straight-pull lead-and-discharge stage; and according to the first predicted antimony evaporation capacity and the second predicted antimony evaporation capacity, the antimony evaporation capacity in the crystal pulling state is determined, and at least the antimony evaporation capacity in the antimony-phosphorus co-doped crystal pulling state can be accurately predicted.

Description

Technical Field

[0001] The present invention belongs to the technical field of direct-pulled silicon single crystals, and specifically relates to a method, device, equipment and product for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling. Background Art

[0002] With the rapid development of integrated circuit technology, the market demand for the quantity and quality of electronic components is increasing. Data shows that 98% of electronic components are made of silicon materials, of which about 85% are made of CZ silicon single crystals.

[0003] In the process of manufacturing CZ silicon single crystals, the resistivity of silicon crystals generally decreases with the increase of doping concentration. Generally, the dopant of lightly doped N-type single crystal silicon is phosphorus. For the resistivity control of N-type single crystals, resistivity compensation is generally used for regulation. For example, boron or gallium is doped in the phosphorus-doped N-type single crystal rod for compensation to reduce the resistivity difference between the head and tail of the N-type single crystal silicon rod.

[0004] However, the production process of antimony-phosphorus co-doped CZ silicon single crystals generally relies on fixed growth parameters and ignores the volatilization effect of antimony. It is difficult to adapt to slight changes in the actual growth process, resulting in uneven distribution of doping elements and large axial differences in resistivity. Summary of the invention

[0005] Based on this, it is necessary to provide a method, device, equipment and product for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling in response to the problems in the above-mentioned background technology, which can at least accurately predict the antimony evaporation amount in the antimony-phosphorus co-doped crystal pulling state, ensure the precise doping of antimony elements, and adjust the growth parameters according to the predicted antimony evaporation amount, optimize the antimony-phosphorus distribution, and achieve precise control of resistivity.

[0006] According to various embodiments of the present disclosure, in a first aspect, the present disclosure provides a method for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling, comprising:

[0007] Obtaining a first model and a second model in a preset state in an antimony-phosphorus co-doped single crystal furnace; the first model includes the correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant; the second model includes the correlation between the antimony evaporation amount in the CZE release stage and the antimony concentration after antimony evaporation, and the antimony concentration after antimony evaporation is associated with the antimony evaporation constant;

[0008] According to a first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace, and a first model, a first predicted antimony evaporation amount in the CZE stage is obtained;

[0009] According to the second correlation between the antimony evaporation constant and the lead-in time in the single crystal furnace and the second model, a second predicted antimony evaporation amount in the direct pulling lead-in stage is obtained;

[0010] The antimony evaporation amount in the crystal pulling state is determined according to the first predicted antimony evaporation amount and the second predicted antimony evaporation amount.

[0011] In the above-mentioned embodiment, the method for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling is because the evaporation effect of antimony is greater than the segregation effect of antimony. In fact, antimony volatilization exists in the process of material smelting, crystal seeding and shoulder release. High crystal rotation, high crucible rotation, low crystal pulling speed, high argon gas flow rate and low pressure environment are all helpful to promote the volatilization of antimony, weaken the segregation phenomenon, and thus promote the stability of resistivity. By obtaining the first model and the second model in the antimony-phosphorus co-doped single crystal furnace under the preset state, the first model includes the correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant, and the second model includes the correlation between the antimony evaporation amount in the CZE release stage and the antimony concentration after antimony evaporation, and the antimony concentration after antimony evaporation is related to the antimony evaporation constant; then, according to the first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace, and the correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant, the first predicted antimony evaporation amount in the CZE stage is obtained; then, according to the second correlation between the antimony evaporation constant and the release time in the single crystal furnace, and the correlation between the antimony evaporation amount in the CZE stage and the antimony concentration after antimony evaporation. , obtain the second predicted antimony evaporation amount in the direct pulling and releasing stage; because the antimony evaporation amount in the antimony-phosphorus co-doped crystal pulling state can be controlled by adjusting the growth parameters in the direct pulling equal-diameter stage and the direct pulling and releasing stage, the antimony evaporation amount in the crystal pulling state can be predicted according to the first predicted antimony evaporation amount and the second predicted antimony evaporation amount, so as to ensure the precise doping of antimony element, and the growth parameters in the direct pulling equal-diameter stage and the direct pulling and releasing stage, such as crystal rotation speed, crucible rotation speed, crystal pulling speed, crystal growth speed, argon gas flow rate, furnace pressure and furnace temperature, etc., can be adjusted according to the predicted antimony evaporation amount, so as to accurately control the antimony evaporation amount, optimize the antimony-phosphorus distribution, realize the precise control of resistivity, and ensure the uniformity of axial resistivity of the prepared silicon rod.

[0012] In some embodiments, the preset state includes the furnace pressure being a preset pressure value and the argon gas flow being a preset flow value; the evaporation amount prediction method further includes the following step of obtaining the first correlation relationship:

[0013] Obtaining the antimony diffusion constant after a preset amount of antimony is doped into the silicon melt in the single crystal furnace;

[0014] According to the antimony diffusion constant, the simulated distribution curve of the axial resistivity of the crystal rod caused by antimony segregation is simulated and calculated when the resistivity at the beginning of crystal pulling is the target value;

[0015] Determine the measured resistivity distribution curve according to the simulated distribution curve;

[0016] According to the measured resistivity distribution curve, the first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace is determined by using the correlation analysis method.

[0017] In the above-mentioned embodiment, the method for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling, the diffusion constant of antimony in molten silicon affects its distribution and concentration in molten silicon, and further affects the growth rate and quality of the single crystal. Experiments have shown that this diffusion constant is related to factors such as the kinematic viscosity coefficient and relative rotation speed of molten silicon, and under specific growth conditions, this value can be determined. Therefore, by setting the furnace pressure to a preset pressure value and the argon gas flow rate to a preset flow rate value, multiple experiments are conducted to obtain the antimony diffusion constant after a preset amount of antimony is doped into the silicon melt in the single crystal furnace, and to determine whether the antimony diffusion constant and the corresponding growth parameters can meet the current mass production needs. Then, based on the aforementioned antimony diffusion constant, the simulated distribution curve of the axial resistivity of the crystal rod caused by antimony segregation is simulated and calculated when the resistivity at the starting point of crystal pulling is the target value, and the measured resistivity distribution curve is determined based on the simulated distribution curve, so that the fit degree between the measured resistivity distribution curve and the simulated distribution curve is greater than or equal to the preset threshold value; then, based on the measured resistivity distribution curve, the correlation analysis method is used to determine the first correlation relationship between the antimony evaporation constant and the residual material weight in the single crystal furnace, so that the corresponding antimony evaporation constant can be accurately calculated based on the real-time residual material weight in the single crystal furnace and the first correlation relationship, thereby accurately calculating the first predicted antimony evaporation amount in the CZE equal diameter stage and the second predicted antimony evaporation amount in the CZE release stage, thereby realizing the accurate prediction of the antimony evaporation amount under the crystal pulling state.

[0018] In some embodiments, a correlation analysis method is used to determine the constant value in the following first association relationship:

[0019] Ev=a+bW+cW 2 +dW 3 ;

[0020] In the above formula, Ev is the antimony evaporation constant, W is the weight of the residual material, and a, b, c and d are all constants.

[0021] The antimony-phosphorus co-doped crystal pulling evaporation amount prediction method in the above-mentioned embodiment uses the correlation analysis method to determine that the antimony evaporation constant is mainly related to the residual material weight. Therefore, after obtaining a large amount of actual data, the constant value in the above-mentioned first correlation relationship is determined, and the function expression of the first correlation relationship is determined, so as to achieve accurate calculation of the corresponding antimony evaporation constant according to the real-time residual material weight in the single crystal furnace and the first correlation relationship, and accurately calculate the first predicted antimony evaporation amount of the CZE stage according to the antimony evaporation constant and the correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant, thereby achieving accurate dynamic prediction of the first predicted antimony evaporation amount in the CZE stage.

[0022] In some embodiments, the temperature in the direct pulling and releasing stage is a preset temperature value; the evaporation amount prediction method further includes the following step of obtaining a second correlation relationship:

[0023] Obtain the variation curve of antimony evaporation constant with the time of single crystal placement in the furnace;

[0024] The functional expression between the antimony evaporation constant and the discharge time is determined according to the change curve.

[0025] The antimony-phosphorus co-doped crystal pulling evaporation amount prediction method in the above-mentioned embodiment, since the temperature of other crystal pulling states except the CZE stage is basically constant, after obtaining the variation curve of the antimony evaporation constant with the drawing and releasing time in the single crystal furnace, the function expression between the antimony evaporation constant and the drawing and releasing time can be determined according to the variation curve, so that the current antimony evaporation constant in the CZE stage can be accurately calculated according to the function expression and the real-time drawing and releasing time, so as to accurately calculate or predict the second predicted antimony evaporation amount in the CZE stage according to the current antimony evaporation constant and the correlation between the antimony evaporation amount in the CZE stage and the antimony concentration after antimony evaporation.

[0026] In some embodiments, determining a functional expression between the antimony evaporation constant and the discharge time includes:

[0027] Determine the values ​​of the constants in the following formulas:

[0028] Ev=m•t n ;

[0029] In the above formula, Ev is the antimony evaporation constant, t is the release time, and m and n are both constants.

[0030] The method for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling in the above-mentioned embodiment can, after determining that the antimony evaporation constant in the direct pulling and releasing stage is mainly related to the releasing time, determine the constant value in the function expression between the antimony evaporation constant and the releasing time based on a large amount of real data, thereby determining the specific function expression between the antimony evaporation constant and the releasing time in the direct pulling and releasing stage.

[0031] In some embodiments, obtaining a first predicted antimony evaporation amount in a CZE stage includes:

[0032] The first predicted antimony evaporation amount N1 is calculated according to the following formula:

[0033] N1=Ev•A•C1;

[0034] In the above formula, Ev is the antimony evaporation constant, A is the antimony evaporation surface area, and C1 is the antimony concentration in the single crystal furnace.

[0035] In some embodiments, obtaining a second predicted antimony evaporation amount in the direct pulling and releasing stage includes:

[0036] The second predicted antimony evaporation amount N2 is calculated according to the following formula:

[0037] C = C0e^-(Ev•A / U);

[0038] N2=(C0-C)•V;

[0039] In the above formula, C is the antimony concentration after antimony evaporation, C0 is the antimony concentration after time t, Ev is the antimony evaporation constant, A is the antimony evaporation surface area, U is the silicon mass in the single crystal furnace, and V is the residual material volume in the single crystal furnace.

[0040] In a second aspect, the present disclosure provides an antimony-phosphorus co-doped crystal pulling evaporation amount prediction device, comprising a model acquisition module, a first prediction module, a second prediction module and a calculation module, wherein the model acquisition module is used to obtain a first model and a second model in a preset state in an antimony-phosphorus co-doped single crystal furnace; the first model includes a correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant; the second model includes a correlation between the antimony evaporation amount in the CZE release stage and the antimony concentration after antimony evaporation, and the antimony concentration after antimony evaporation is associated with the antimony evaporation constant; the first prediction module is used to obtain a first predicted antimony evaporation amount in the CZE stage based on a first correlation between the antimony evaporation constant and the weight of residual material in the single crystal furnace, and the first model; the second prediction module is used to obtain a second predicted antimony evaporation amount in the CZE release stage based on a second correlation between the antimony evaporation constant and the release time in the single crystal furnace, and the second model; the calculation module is used to determine the antimony evaporation amount in the crystal pulling state based on the first predicted antimony evaporation amount and the second predicted antimony evaporation amount.

[0041] The device for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling in the above-mentioned embodiment obtains a first model and a second model in a preset state in an antimony-phosphorus co-doped single crystal furnace through a model acquisition module, wherein the first model includes a correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant, and the second model includes a correlation between the antimony evaporation amount in the CZE lead-in and release stage and the antimony concentration after antimony evaporation, and the antimony concentration after antimony evaporation is associated with the antimony evaporation constant; then, based on the first prediction module, according to the first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace, and the correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant, a first predicted antimony evaporation amount in the CZE stage is obtained; then, based on the second prediction module, according to the second correlation between the antimony evaporation constant and the lead-in time in the single crystal furnace, and the correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant, a first predicted antimony evaporation amount in the CZE stage is obtained. The correlation between the antimony evaporation amount in the CZT stage and the antimony concentration after antimony evaporation is obtained to obtain the second predicted antimony evaporation amount in the CZT lead-in and release stage; since the antimony evaporation amount in the antimony-phosphorus co-doped crystal pulling state can be controlled by adjusting the growth parameters in the CZT equal-diameter stage and the CZT lead-in and release stage, the antimony evaporation amount in the crystal pulling state can be predicted based on the first predicted antimony evaporation amount and the second predicted antimony evaporation amount based on the calculation module to ensure the accurate doping of antimony element, and the growth parameters in the CZT equal-diameter stage and the CZT lead-in and release stage, such as crystal rotation speed, crucible rotation speed, crystal pulling speed, crystal growth speed, argon gas flow rate, furnace pressure and furnace temperature, etc., can be adjusted according to the predicted antimony evaporation amount to accurately control the antimony evaporation amount, optimize the antimony-phosphorus distribution, achieve accurate control of the resistivity, and ensure the uniformity of the axial resistivity of the prepared silicon rod.

[0042] In a third aspect, the present disclosure provides an evaporation prediction device, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the steps of the method described in any embodiment of the present disclosure are implemented.

[0043] In a fourth aspect, the present disclosure provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the method described in any one of the embodiments of the present disclosure.

[0044] In a fifth aspect, the present disclosure provides a computer program product, including a computer program, which, when executed by a processor, implements the steps of the method described in any embodiment of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, drawings of other embodiments can be obtained based on these drawings without creative work.

[0046] FIG1 is a schematic flow chart of a method for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling provided in one embodiment of the present disclosure;

[0047] FIG2 is a schematic diagram showing a comparison of curves of axial resistivity of a single crystal obtained by co-doping with antimony and phosphorus under three furnace pressure conditions in one embodiment of the present disclosure;

[0048] FIG3a is a simulated distribution curve of the axial resistivity of a crystal rod and a measured distribution curve of the axial resistivity of a crystal rod obtained without adjusting the growth parameters in an embodiment of the present disclosure;

[0049] FIG3 b is a simulated distribution curve of the axial resistivity of a crystal rod and a measured distribution curve of the axial resistivity of a crystal rod obtained by adjusting growth parameters in an embodiment of the present disclosure;

[0050] FIG4 is a curve showing a change in the evaporation constant with the crystal length obtained when the curve shown in FIG3b is obtained in one embodiment of the present disclosure;

[0051] FIG5 is a correlation curve between the residual material weight and the evaporation constant in one embodiment of the present disclosure;

[0052] FIG6 is a graph showing two antimony evaporation constant change curves obtained based on the first calculation method and the second calculation method under the experimental conditions corresponding to the change curve in FIG5 ;

[0053] FIG7 is a curve showing the variation of the antimony evaporation constant with the drawing time in the direct drawing stage obtained in one embodiment of the present disclosure;

[0054] FIG8 is a schematic diagram of the structure of an antimony-phosphorus co-doped crystal pulling evaporation amount prediction device provided in one embodiment of the present disclosure.

[0055] Reference numerals and descriptions:

[0056] 10. Model acquisition module; 20. First prediction module; 30. Second prediction module; 40. Calculation module. DETAILED DESCRIPTION

[0057] In order to facilitate the understanding of the present disclosure, the present disclosure will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present disclosure are given in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present disclosure more thorough and comprehensive.

[0058] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. The terms used herein in the specification of the present disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0059] In the case of using “including”, “having”, and “comprising” described herein, another component may be added unless a clear limiting term such as “only”, “consisting of”, etc. is used. Unless mentioned otherwise, a term in the singular form may include a plural form and should not be construed as being one in number.

[0060] The segregation principle of antimony-phosphorus co-doped single crystals mainly involves the change in the concentration distribution of doping elements during the crystal growth process. During the growth of single crystal silicon, the introduction of doping elements (such as antimony and phosphorus) will significantly affect the physical and chemical properties of the crystal. There is a difference in the solubility of these doping elements in the melt and the solid. Usually, the solubility in the liquid is greater than the solubility in the solid, which is defined as the segregation coefficient ‌1.

[0061] Segregation refers to the phenomenon that when a crystalline material containing impurities is melted and then recrystallized, the concentration of impurities in the solid crystal and the uncrystallized liquid are different. During the growth of antimony-phosphorus co-doped single crystals, due to the different segregation coefficients of antimony and phosphorus, their distribution in the crystal will also be different.

[0062] Specifically, the incorporation of antimony and phosphorus into the silicon lattice can cause lattice distortion, thereby affecting the dynamics of dislocations. At high temperatures, these doping atoms can interact with dislocation cores to form complexes, which act as pinning centers and can inhibit the slip of dislocations. However, due to the different segregation coefficients of antimony and phosphorus, their distribution in the crystal will show a certain gradient. For example, the segregation coefficient of phosphorus is small, which means that during crystal growth, phosphorus atoms are more likely to be enriched in the tail of the crystal, while the segregation coefficient of antimony may be relatively large, and its distribution may be more uniform or have different characteristics.

[0063] In antimony-phosphorus co-doped single crystals, due to the co-existence of the two doping elements, their interaction will further affect the properties of the crystal. For example, antimony and phosphorus may jointly affect the conductivity, mechanical strength and other properties of the crystal by forming a complex or changing the dislocation behavior.

[0064] Antimony co-doped semiconductors have excellent photoelectric properties and have broad application prospects in the fields of solar cells, light-emitting diodes and lasers. Especially in the field of solar cells, phosphorus antimony co-doped semiconductors can enhance the photoelectric conversion efficiency and improve the performance of solar cells.

[0065] Existing control methods often rely on preset fixed growth parameters, which are difficult to adapt to slight changes in the actual growth process. They lack real-time monitoring and dynamic adjustment of growth parameters during the growth process, lack precision and controllability, and are difficult to achieve optimal resistivity distribution, resulting in uneven resistivity distribution and affecting device performance.

[0066] The embodiments of the present disclosure aim to provide a method, device, equipment and product for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling, which can at least accurately predict the antimony evaporation amount in the antimony-phosphorus co-doped crystal pulling state, ensure the precise doping of the antimony element, and adjust the growth parameters according to the predicted antimony evaporation amount, optimize the antimony-phosphorus distribution, and achieve precise control of the resistivity.

[0067] Referring to FIG. 1 , in some embodiments, a method for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling is provided, comprising:

[0068] Step S20: obtaining a first model and a second model in a preset state in an antimony-phosphorus co-doped single crystal furnace; the first model includes the correlation between the antimony evaporation amount in the CZ phase and the antimony evaporation constant; the second model includes the correlation between the antimony evaporation amount in the CZ phase and the antimony concentration after antimony evaporation, and the antimony concentration after antimony evaporation is associated with the antimony evaporation constant;

[0069] Step S40: obtaining a first predicted antimony evaporation amount in the CZE stage according to a first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace and a first model;

[0070] Step S60: obtaining a second predicted antimony evaporation amount in the CZP release stage according to a second correlation between the antimony evaporation constant and the release time in the single crystal furnace and a second model;

[0071] Step S80: determining the antimony evaporation amount in the crystal pulling state according to the first predicted antimony evaporation amount and the second predicted antimony evaporation amount.

[0072] For example, since the evaporation effect of antimony is greater than the segregation effect of antimony, antimony volatilization actually occurs during the process of smelting, seeding and shouldering. High crystal rotation, high crucible rotation, low crystal pulling speed, high argon gas flow rate and low pressure environment all help promote the volatilization of antimony, weaken the segregation phenomenon, and thus promote the stability of resistivity. By obtaining the first model and the second model in the antimony-phosphorus co-doped single crystal furnace under the preset state, the first model includes the correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant, and the second model includes the correlation between the antimony evaporation amount in the CZE stage and the antimony concentration after antimony evaporation, and the antimony concentration after antimony evaporation is related to the antimony evaporation constant; then, based on the first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace, and the correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant, the first predicted antimony evaporation amount in the CZE stage is obtained; then, based on the second correlation between the antimony evaporation constant and the seeding time in the single crystal furnace, and the correlation between the antimony evaporation amount in the CZE stage and the antimony concentration after antimony evaporation , obtain the second predicted antimony evaporation amount in the direct pulling and releasing stage; because the antimony evaporation amount in the antimony-phosphorus co-doped crystal pulling state can be controlled by adjusting the growth parameters in the direct pulling equal-diameter stage and the direct pulling and releasing stage, the antimony evaporation amount in the crystal pulling state can be predicted according to the first predicted antimony evaporation amount and the second predicted antimony evaporation amount, so as to ensure the precise doping of antimony element, and the growth parameters in the direct pulling equal-diameter stage and the direct pulling and releasing stage, such as crystal rotation speed, crucible rotation speed, crystal pulling speed, crystal growth speed, argon gas flow rate, furnace pressure and furnace temperature, etc., can be adjusted according to the predicted antimony evaporation amount, so as to accurately control the antimony evaporation amount, optimize the antimony-phosphorus distribution, realize the precise control of resistivity, and ensure the uniformity of axial resistivity of the prepared silicon rod.

[0073] The diffusion behavior and diffusion constant of antimony in silicon single crystals are affected by many factors, including temperature, doping concentration, and other doping elements. The incorporation of antimony affects the performance of silicon single crystals through its interaction with dislocations. This effect is of great significance for the application and processing of silicon single crystals, especially in the process of integrated circuit manufacturing, and plays a key role in improving the mechanical strength of silicon wafers and device performance.

[0074] However, in the related art, in the antimony-phosphorus co-doped crystal pulling process, the diffusion constants and evaporation constants of P and Sb are fixed values ​​as shown in Table 1 below.

[0075] Table 1

[0076]

[0077] As shown in Table 1, the diffusion constants and evaporation constants of P and Sb in the table are all values ​​obtained by testing in solid silicon at 1200°C. In the actual CZ process, P and Sb are doped into molten silicon at a temperature of more than 1400°C, and the applicability of the diffusion constants in Table 1 will deteriorate. Among them, the diffusion constant of phosphorus has been verified by a large number of experiments to be about 2.80E-5, which is 7 orders of magnitude different from the value in the table.

[0078] In some embodiments of the present disclosure, the process of multiple experiments to determine the diffusion constant of antimony in molten silicon mainly includes:

[0079] Sample preparation: Silicon single crystals containing antimony were prepared by the Czochralski method. During the process, a preset amount of antimony was added to the silicon melt as a dopant and was incorporated into the silicon lattice during the crystal growth process.

[0080] Cooling and slicing: After diffusion treatment, the silicon single crystal is slowly cooled to fix the distribution of antimony atoms in the crystal lattice. Subsequently, the silicon single crystal is sliced ​​into a series of thin slices for subsequent resistivity measurements.

[0081] Data processing and analysis: A four-probe resistivity / square resistance detector is used to collect the resistivity data of the profile. The diffusion constant of antimony is calculated based on the measured resistivity data. The process usually involves calculation processes such as effective segregation. The diffusion constant is determined by fitting the test data with the theoretical numerical value. The diffusion constant of antimony in molten silicon is found to be 2.914E-6.

[0082] Result verification: In order to ensure the accuracy of the experimental results, multiple experiments were conducted to verify the repeatability of the data. The influence of experimental conditions (such as temperature, pressure, purity of silicon and antimony, etc.) on the diffusion constant was taken into account. It was found that the diffusion constant of antimony in molten silicon is 2.914E-6, which can meet the current mass production needs.

[0083] Please refer to FIG. 2 . In some embodiments, the preset state includes the furnace pressure being a preset pressure value and the argon gas flow being a preset flow value. The evaporation amount prediction method further includes the following step of obtaining a first correlation relationship:

[0084] Step S32: obtaining the antimony diffusion constant after a preset amount of antimony is doped into the silicon melt in the single crystal furnace;

[0085] Step S34: simulating and calculating the distribution curve of the axial resistivity of the crystal rod caused by antimony segregation when the resistivity at the start of crystal pulling is the target value according to the antimony diffusion constant;

[0086] Step S36: determining the measured resistivity distribution curve according to the simulated distribution curve;

[0087] Step S38: According to the measured resistivity distribution curve, a first correlation relationship between the antimony evaporation constant and the weight of the residual material in the single crystal furnace is determined by using a correlation analysis method.

[0088] For example, step S32 may refer to the aforementioned test steps to determine that the antimony diffusion constant is 2.914E-6.

[0089] For example, in the preset state: the preset pressure value of the furnace pressure is 3torr-15torr, for example, the preset pressure value can be 3torr, 7torr, 12torr or 15torr, etc.; the preset flow value of the argon flow rate can be 30slpm-170slpm, for example, the preset flow value can be 30slpm, 60slp, 90slp, 110slp, 140slp, 160slp or 170slpm, etc.; the thermal field size in the single crystal furnace is 28 inches-42 inches, for example, the thermal field size can be 28 inches, 32 inches, 36 inches, 40 inches or 42 inches, etc.

[0090] In step S34, a silicon single crystal containing antimony can be prepared by the Czochralski method. During the process, a certain amount of antimony is added to the silicon melt as a dopant and is incorporated into the silicon lattice during the crystal growth process. Three furnace pressing processes can be used for pulling verification. Then, a portable four-probe detector is used to collect the axial resistivity data of the pulled crystal rod, for example, at three points with an interval of 50 mm in the axial direction and equidistantly distributed in the circumferential direction of the concentric circles of the cross section, and the resistivity curve with the crystal length shown in FIG2 is measured. In FIG2, the unit of the resistivity of the vertical axis is ohm·meter (Ω·m), and the unit of the crystal length of the horizontal axis is mm.

[0091] As shown in Figure 2, BSL is the axial resistivity distribution of phosphorus-doped single crystals. The yellow BSL straight line indicates that the axial resistivity of phosphorus-doped single crystals is little affected by changes in furnace pressure. Since the evaporation effect of antimony is greater than the segregation effect of antimony, the green curve in Figure 2 is obtained by reducing the furnace pressure from 9.4 Torr to 2 Torr; the orange curve in Figure 2 is obtained by maintaining the furnace pressure at 6 Torr to 7 Torr; the gray curve in Figure 2 is obtained by increasing the furnace pressure from 7 Torr to 10 Torr. Therefore, the control of antimony evaporation can be achieved by presetting the furnace pressure and argon parameters, indicating that the evaporation effect of antimony can be enhanced or suppressed by changing the furnace pressure.

[0092] For example, in step S34, based on the antimony diffusion constant, the resistivity at the beginning of crystal pulling (head-controlled resistivity) is simulated and calculated to be consistent with the target value. Then, the simulated distribution curve of the axial resistivity of the crystal rod caused by antimony segregation is shown in FIG3a, wherein the horizontal axis represents the crystal length in mm, and the vertical axis represents the axial resistivity in Ω·cm; the green curve in FIG3a represents the simulated distribution curve of the axial resistivity of the crystal rod caused by antimony segregation; the red curve in FIG3a represents the simulated distribution curve of the axial resistivity of the crystal rod actually measured. In the actual process, the segregation effect of antimony is smaller than the evaporation effect of antimony, and the segregation effect of antimony and the evaporation effect of antimony jointly affect the axial resistivity distribution of the crystal rod.

[0093] For example, in step S36, the measured resistivity distribution curve is determined according to the simulated distribution curve, for example, by simulating and calculating the antimony evaporation constant (Ev) and the evaporation amount (N) at different lengths (along the axial direction), to obtain the simulated resistivity curve and the measured resistivity curve shown in FIG3b, so that the fitting degree between the simulated resistivity curve shown in FIG3b and the measured resistivity curve is ≥99.8%.

[0094] In the process of obtaining the simulated resistivity curve and the measured resistivity curve shown in FIG. 3 b , the evaporation constants at different crystal lengths are obtained as shown in FIG. 4 .

[0095] Furthermore, in step S38, the first correlation between the antimony evaporation constant (Ev) and the weight of the residual material in the single crystal furnace can be determined by using a correlation analysis method based on the measured resistivity distribution curve shown in FIG3b and the curve of the evaporation constant changing with the crystal length shown in FIG4.

[0096] In the correlation analysis method, the relevant independent variables include the background monitoring data of the furnace, such as crystal length, residual material weight, growth rate setting, crystal growth rate, main heater power, diameter value, actual argon flow rate, main chamber pressure value, actual crystal pulling speed, crystal weight, auxiliary chamber pressure value, crucible speed output, crystal speed output, average furnace pressure, average liquid surface temperature, actual crucible speed, actual crystal speed, water flow rate of the water cooling jacket, liquid surface temperature measurement, and equal diameter time, etc.

[0097] Statistical methods are used to determine the correlation between the antimony evaporation constant (Ev) and at least one of the aforementioned furnace background monitoring data. After the correlation analysis, the size, direction and significance of the correlation coefficient need to be explained. A positive correlation coefficient indicates that an increase in one variable is accompanied by an increase in another variable, while a negative correlation coefficient indicates that an increase in one variable is accompanied by a decrease in another variable. The closer the absolute value of the correlation coefficient is to 1 or -1, the stronger the correlation. The significance level is usually set to 0.05 or 0.01, and if the p-value is less than these thresholds, the correlation is considered to be statistically significant. Through the stratification of the thresholds of the above significance levels, the independent variables with a significance level of P≤0.05 are identified, including: crystal length, residual weight, actual argon flow rate, main chamber pressure value, average liquid surface temperature, and equal diameter time.

[0098] Through regression analysis, the constant term was deleted, and the independent variables included: actual argon flow rate, main chamber pressure value, and average liquid surface temperature; the crystal length and equal diameter time were further deleted through the variance inflation factor (VIF) method, and finally the relationship between the residual weight and the evaporation constant was established as follows:

[0099] Ev=a+bW+cW 2 +dW 3 ;

[0100] In the above formula, Ev is the antimony evaporation constant, W is the weight of the residual material, and a, b, c and d are all constants.

[0101] Based on the test data in the same experiment in Figures 3b and 4, the correlation curve between the residual material weight and the evaporation constant is shown in Figure 5, where the horizontal axis represents the residual material weight in g, and the vertical axis represents the evaporation constant in cm / s.

[0102] The correlation analysis method is used to determine the constant value in the first correlation relationship, and the specific function expression between the residual weight and the evaporation constant is obtained as follows:

[0103] Ev=0.000301638354296996-2.847079761568·10 -11 W+2.374013120331233•10 - 15 W 2 -2.82524056437763•10 -21 W 3 .

[0104] In some embodiments, obtaining a first predicted antimony evaporation amount in a CZE stage includes:

[0105] The first predicted antimony evaporation amount N1 is calculated according to the following formula:

[0106] N1=Ev•A•C1First calculation method;

[0107] In the above formula, Ev is the antimony evaporation constant, A is the antimony evaporation surface area, and C1 is the antimony concentration in the single crystal furnace.

[0108] In the above-mentioned embodiment, the antimony evaporation constant determined by the correlation analysis method is mainly related to the residual material weight. Therefore, after obtaining a large amount of actual data, the constant value in the above-mentioned first correlation relationship is determined, and the function expression of the first correlation relationship is determined, so as to achieve accurate calculation of the corresponding antimony evaporation constant according to the real-time residual material weight in the single crystal furnace and the first correlation relationship, and accurately calculate the first predicted antimony evaporation amount in the CZE stage according to the antimony evaporation constant and the correlation relationship between the antimony evaporation amount in the CZE stage and the antimony evaporation constant, thereby achieving accurate dynamic prediction of the first predicted antimony evaporation amount in the CZE stage.

[0109] The diffusion constant of antimony in molten silicon affects its distribution and concentration in the molten silicon, and thus affects the growth rate and quality of the single crystal. Experiments have shown that this diffusion constant is related to factors such as the kinematic viscosity coefficient and relative rotation speed of molten silicon, and under specific growth conditions, this value can be determined. Therefore, by setting the furnace pressure to a preset pressure value and the argon gas flow rate to a preset flow rate value, multiple experiments are conducted to obtain the antimony diffusion constant after a preset amount of antimony is doped into the silicon melt in the single crystal furnace, and to determine whether the antimony diffusion constant and the corresponding growth parameters can meet the current mass production needs. Then, based on the aforementioned antimony diffusion constant, a simulated distribution curve of the axial resistivity of the crystal rod caused by antimony segregation is simulated and calculated when the resistivity at the starting point of crystal pulling is the target value, and the measured resistivity distribution curve is determined based on the simulated distribution curve, so that the fit degree between the measured resistivity distribution curve and the simulated distribution curve is greater than or equal to a preset threshold value; then, based on the measured resistivity distribution curve, a correlation analysis method is used to determine a first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace, so that the corresponding antimony evaporation constant can be accurately calculated based on the real-time residual material weight in the single crystal furnace and the first correlation, thereby accurately calculating the first predicted antimony evaporation amount in the CZE stage.

[0110] Compared with the calculation of the first predicted antimony evaporation amount N1 in the CZE state, the changes in the weight of the remaining material (remaining raw material weight), power, furnace pressure, and argon flow rate in the single crystal furnace are relatively small in other crystal pulling states and stages; therefore, a different calculation method (second calculation method) from the above-mentioned antimony evaporation amount in the equal diameter process is used to calculate the second predicted antimony evaporation amount N2 while considering the latent heat of evaporation:

[0111] C = C0e^-(Ev•A / U;

[0112] N2=(C0-C)•V;

[0113] In the above formula, C is the antimony concentration after antimony evaporation, C0 is the antimony concentration after time t, Ev is the antimony evaporation constant, A is the antimony evaporation surface area, U is the silicon mass in the single crystal furnace, and V is the residual material volume in the single crystal furnace.

[0114] As the temperature of water rises, the latent heat of evaporation gradually decreases, and the difficulty of evaporation of water increases; the evaporation phenomenon of antimony is similar to that of water. Using the data under the aforementioned experimental conditions, the change of the antimony evaporation constant in the straight pulling equal diameter stage is simulated and calculated, and the results are shown in Figure 6. In Figure 6, the horizontal axis represents the weight of the residual material in g, and the vertical axis represents the evaporation constant in cm / s. The antimony evaporation constants obtained by the two calculation methods are significantly different in the first section, and the latter section basically overlaps. It is judged that the difference is caused by the latent heat of evaporation of antimony in silicon, and the latent heat of evaporation of antimony in silicon satisfies a similar change relationship to the latent heat of evaporation of water.

[0115] Since the temperature in other crystal pulling states except the Czochralski equal diameter stage is basically constant, for example, the temperature in the Czochralski drawing and releasing stage is a preset temperature value; the evaporation amount prediction method also includes the following step of obtaining the second correlation relationship:

[0116] Step S52: obtaining a curve of the variation of the antimony evaporation constant with the time of being placed in the single crystal furnace;

[0117] Step S54: determining a functional expression between the antimony evaporation constant and the discharge time according to the variation curve.

[0118] For example, after obtaining the variation curve of the antimony evaporation constant with the release time in the single crystal furnace, the function expression between the antimony evaporation constant and the release time can be determined according to the variation curve, so that the current antimony evaporation constant in the direct pulling release stage can be accurately calculated according to the function expression and the real-time release time, so as to accurately calculate or predict the second predicted antimony evaporation amount in the direct pulling release stage according to the current antimony evaporation constant and the correlation between the antimony evaporation amount in the direct pulling release stage and the antimony concentration after antimony evaporation.

[0119] The data under the above test conditions can be used to simulate the change curve of the antimony evaporation constant with the drawing time in the direct pulling drawing stage, as shown in Figure 7. In Figure 7, the horizontal axis represents the drawing time in min, and the vertical axis represents the evaporation constant in cm / s.

[0120] In some embodiments, determining a functional expression between the antimony evaporation constant and the discharge time includes:

[0121] Determine the values ​​of the constants in the following formulas:

[0122] Ev=m•t n ;

[0123] In the above formula, Ev is the antimony evaporation constant, t is the release time, and m and n are both constants.

[0124] For example, after determining that the antimony evaporation constant in the direct-pull release stage is mainly related to the release time, the constant value in the function expression between the antimony evaporation constant and the release time can be determined by fitting according to the curve in FIG. 7, so as to determine the specific function expression between the antimony evaporation constant Ev and the release time t in the direct-pull release stage as follows:

[0125] Ev=0.000104194•t 0.463774 .

[0126] In some embodiments, the first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace and the first calculation method are combined, and the least squares method is used to calculate the optimal antimony-phosphorus doping ratio. Combined with the correlation between the antimony evaporation amount in the direct pulling and releasing stage and the antimony concentration after antimony evaporation, the second predicted antimony evaporation amount in the direct pulling and releasing stage is accurately calculated or predicted, thereby achieving optimal control of the axial resistivity in the direct pulling equal-diameter stage and the direct pulling and releasing stage in the antimony-phosphorus co-doping process.

[0127] The CZE stage and CZE lead-out stage are relatively fixed and repetitive. Compared with the calculation of the antimony evaporation amount in the CZE stage and the antimony evaporation amount in the CZE lead-out stage, the re-investment stage is diverse and is affected by many factors such as the weight of the remaining material in the single crystal furnace (residual material amount), the remaining concentration of antimony, the amount of re-investment, the furnace pressure, and the temperature. After collecting a large amount of relevant data, conducting correlation analysis and eliminating irrelevant variables, the relationship between the three variables of antimony concentration (unit: atoms / cm³), the amount of remaining material (unit: kg), and the re-investment time (unit: min) and the evaporation amount Y (unit: atoms) is confirmed as shown in Table 2.

[0128] Table 2

[0129]

[0130] The average deviation of the established antimony concentration of disconnection, residual material, reinvestment time and evaporation amount Y is ≤1%, which meets the use requirements. However, the model establishes the relationship between three independent variables (antimony concentration of disconnection, residual material, reinvestment time) and one dependent variable Y (evaporation amount). When the amount of original training data is small, the deviation calculated without training will reach 50% or more, which is not convenient for actual production use; therefore, it is preferred to establish the relationship between residual material and reinvestment evaporation amount, and the correlation analysis method can be used to determine the constant value in the target reinvestment evaporation calculation model as follows:

[0131] P = i + kQ;

[0132] In the above formula, P is the evaporation capacity of re-investment, Q is the weight of the remaining material (residual material amount) in the re-investment stage, and i and k are both constants.

[0133] The specific functional expressions of the residual material amount and the re-investment evaporation amount can be determined by the relevant fitting algorithm as follows:

[0134] P=1.1891-0.001Q.

[0135] In some embodiments, the first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace and the first calculation method can be combined to use the least squares method to calculate the optimal antimony-phosphorus doping ratio. Combined with the correlation between the antimony evaporation amount in the direct pulling and releasing stage and the antimony concentration after antimony evaporation, the second predicted antimony evaporation amount in the direct pulling and releasing stage can be accurately calculated or predicted. Combined with the target re-investment evaporation calculation model, the optimal control of the axial resistivity of the antimony-phosphorus co-doped whole furnace crystal pulling can be achieved.

[0136] Table 3

[0137]

[0138] Please refer to Table 3. Combined with the first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace and the first calculation method, the least squares method is used to calculate the optimal antimony-phosphorus doping ratio for preparing N-type single crystal silicon by the direct pulling method. Combined with the correlation between the antimony evaporation amount in the direct pulling process and the antimony concentration after antimony evaporation, the predicted antimony evaporation amount in the direct pulling process is accurately calculated or predicted to ensure the precise doping of antimony elements during the release process. Further, according to the target re-investment evaporation calculation model, the antimony evaporation amount in the re-investment stage in the antimony-phosphorus co-doped single crystal furnace is predicted, and the antimony-phosphorus doping ratio in the re-investment stage is controlled according to the antimony evaporation amount to ensure the precise doping of antimony elements in the re-investment stage. Finally, the axial resistivity of the crystal rod is obtained to be 0.952Ω·m-0.964Ω·m, which effectively realizes the optimization control of the axial resistivity of the antimony-phosphorus co-doped whole furnace crystal pulling.

[0139] It should be understood that, although the various steps in the flowchart of FIG. 1 are shown in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in FIG. 1 may include a plurality of sub-steps or a plurality of stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these sub-steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the sub-steps or stages of other steps.

[0140] Please refer to Figure 8. In some embodiments, a device for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling is provided, including a model acquisition module 10, a first prediction module 20, a second prediction module 30 and a calculation module 40. The model acquisition module 10 is used to obtain a first model and a second model in a preset state in an antimony-phosphorus co-doped single crystal furnace; the first model includes a correlation between the antimony evaporation amount in the CZE equal-diameter stage and the antimony evaporation constant; the second model includes a correlation between the antimony evaporation amount in the CZE lead-out stage and the antimony concentration after antimony evaporation, and the antimony concentration after antimony evaporation is associated with the antimony evaporation constant; the first prediction module 20 is used to obtain a first predicted antimony evaporation amount in the CZE equal-diameter stage according to a first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace, and the first model; the second prediction module 30 is used to obtain a second predicted antimony evaporation amount in the CZE lead-out stage according to a second correlation between the antimony evaporation constant and the lead-out time in the single crystal furnace, and the second model; the calculation module 40 is used to determine the antimony evaporation amount in the crystal pulling state according to the first predicted antimony evaporation amount and the second predicted antimony evaporation amount.

[0141] For example, please continue to refer to Figure 8, and obtain the first model and the second model of the antimony-phosphorus co-doped single crystal furnace under the preset state through the model acquisition module 10, the first model includes the correlation between the antimony evaporation amount and the antimony evaporation constant in the CZE stage, and the second model includes the correlation between the antimony evaporation amount and the antimony concentration after antimony evaporation in the CZE release stage, and the antimony concentration after antimony evaporation is associated with the antimony evaporation constant; then based on the first prediction module 20, according to the first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace, and the correlation between the antimony evaporation amount and the antimony evaporation constant in the CZE stage, the first predicted antimony evaporation amount in the CZE stage is obtained; then based on the second prediction module 30, according to the second correlation between the antimony evaporation constant and the release time in the single crystal furnace, and the antimony concentration in the CZE release stage The correlation between the evaporation amount and the antimony concentration after antimony evaporation is obtained to obtain the second predicted antimony evaporation amount in the direct pulling and releasing stage; since the antimony evaporation amount in the antimony-phosphorus co-doped crystal pulling state can be controlled by adjusting the growth parameters in the direct pulling equal-diameter stage and the direct pulling and releasing stage, the antimony evaporation amount in the crystal pulling state can be predicted based on the calculation module 40 according to the first predicted antimony evaporation amount and the second predicted antimony evaporation amount, so as to ensure the precise doping of the antimony element, and the growth parameters in the direct pulling equal-diameter stage and the direct pulling and releasing stage, such as the crystal rotation speed, the crucible rotation speed, the crystal pulling speed, the crystal growth speed, the argon gas flow rate, the furnace pressure and the furnace temperature, etc., can be adjusted according to the predicted antimony evaporation amount, so as to accurately control the antimony evaporation amount, optimize the antimony-phosphorus distribution, realize the precise control of the resistivity, and ensure the uniformity of the axial resistivity of the prepared silicon rod.

[0142] In some embodiments, the preset state includes the furnace pressure being a preset pressure value and the argon gas flow being a preset flow value; an antimony-phosphorus co-doped crystal pulling evaporation amount prediction device also includes a first correlation relationship acquisition module, which is used to obtain the antimony diffusion constant after a preset amount of antimony is doped into the silicon melt in the single crystal furnace, and based on the antimony diffusion constant, simulate and calculate the axial resistivity simulation distribution curve of the crystal rod caused by antimony segregation when the resistivity at the starting point of crystal pulling is the target value, determine the measured resistivity distribution curve based on the simulated distribution curve, and use the correlation analysis method to determine the first correlation relationship between the antimony evaporation constant and the weight of the residual material in the single crystal furnace based on the measured resistivity distribution curve.

[0143] By setting the furnace pressure to a preset pressure value and the argon gas flow rate to a preset flow rate value, multiple experiments are conducted to obtain the antimony diffusion constant after the preset amount of antimony is doped into the silicon melt in the single crystal furnace, and determine that the antimony diffusion constant and the corresponding growth parameters can meet the current mass production needs. Then, based on the aforementioned antimony diffusion constant, the simulated distribution curve of the axial resistivity of the crystal rod caused by antimony segregation when the resistivity at the beginning of the crystal pulling is the target value is simulated and calculated, and the measured resistivity distribution curve is determined based on the simulated distribution curve, so that the fit between the measured resistivity distribution curve and the simulated distribution curve is greater than or equal to the preset threshold value; then, based on the measured resistivity distribution curve, the first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace is determined by the correlation analysis method, so that the corresponding antimony evaporation constant can be accurately calculated based on the real-time residual material weight in the single crystal furnace and the first correlation, so as to accurately calculate the first predicted antimony evaporation amount in the straight pulling equal diameter stage, and the second predicted antimony evaporation amount in the straight pulling release stage, so as to achieve accurate prediction of the antimony evaporation amount under the crystal pulling state.

[0144] In some embodiments, the temperature of the direct pulling stage is a preset temperature value; an antimony-phosphorus co-doped crystal pulling evaporation amount prediction device also includes a second correlation relationship acquisition module, which is used to obtain the variation curve of the antimony evaporation constant with the duration of the directing in the single crystal furnace; and determine the function expression between the antimony evaporation constant and the duration of the directing according to the variation curve. Since the temperature of other crystal pulling states except the direct pulling equal diameter stage is basically constant, after obtaining the variation curve of the antimony evaporation constant with the duration of the directing in the single crystal furnace, the function expression between the antimony evaporation constant and the duration of the directing can be determined according to the variation curve, so that the current antimony evaporation constant of the direct pulling stage can be accurately calculated according to the function expression and the real-time duration of the directing, so as to accurately calculate or predict the second predicted antimony evaporation amount of the direct pulling stage according to the current antimony evaporation constant and the correlation between the antimony evaporation amount of the direct pulling stage and the antimony concentration after antimony evaporation.

[0145] For example, an antimony-phosphorus co-doped crystal pulling evaporation amount prediction device can be applied to the fields of solar cells, light-emitting diodes, lasers, etc.

[0146] In some embodiments of the present disclosure, an energy storage device is provided, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the steps of the method for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling in any embodiment of the present disclosure are implemented.

[0147] In some embodiments of the present disclosure, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps of the method for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling in any embodiment of the present disclosure are implemented.

[0148] In some embodiments of the present disclosure, a computer program product is provided, including a computer program, which, when executed by a processor, implements the steps of the method for predicting the evaporation amount of antimony-phosphorus co-doping crystal pulling in any embodiment of the present disclosure.

[0149] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0150] The above-described embodiments only express several implementation methods of the present disclosure, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present disclosure, and these all belong to the protection scope of the present disclosure. Therefore, the protection scope of the patent of the present disclosure shall be subject to the attached claims.

Claims

1. A method for predicting the evaporation amount of antimony-phosphorus co-doped crystal pulling, characterized in that: include: Obtaining a first model and a second model in a preset state in an antimony-phosphorus co-doped single crystal furnace; the first model includes the correlation between the antimony evaporation amount in the CZE stage and the antimony evaporation constant; the second model includes the correlation between the antimony evaporation amount in the CZE release stage and the antimony concentration after antimony evaporation, and the antimony concentration after antimony evaporation is associated with the antimony evaporation constant; According to a first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace, and the first model, obtaining a first predicted antimony evaporation amount in the CZE stage; According to the second correlation between the antimony evaporation constant and the lead-in time in the single crystal furnace, and the second model, a second predicted antimony evaporation amount in the direct pulling lead-in stage is obtained; The antimony evaporation amount in the crystal pulling state is determined according to the first predicted antimony evaporation amount and the second predicted antimony evaporation amount.

2. The evaporation prediction method according to claim 1, characterized in that: The preset state includes the furnace pressure being a preset pressure value and the argon gas flow being a preset flow value; the evaporation amount prediction method further includes the following step of obtaining the first association relationship: Obtaining an antimony diffusion constant after a preset amount of antimony is doped into the silicon melt in the single crystal furnace; According to the antimony diffusion constant, a simulated distribution curve of the axial resistivity of the crystal rod caused by antimony segregation is simulated and calculated when the resistivity at the start of crystal pulling is a target value; Determining a measured resistivity distribution curve according to the simulated distribution curve; According to the measured resistivity distribution curve, the first correlation relationship between the antimony evaporation constant and the weight of the residual material in the single crystal furnace is determined by using a correlation analysis method.

3. The evaporation prediction method according to claim 2, characterized in that: The correlation analysis method is used to determine the constant value in the first association relationship as follows: Home=a+bW+cW 2 +dW 3 ; In the above formula, Ev is the antimony evaporation constant, W is the weight of the residual material, and a, b, c and d are all constants.

4. The evaporation prediction method according to any one of claims 1 to 3, characterized in that: The temperature in the direct-pull release stage is a preset temperature value; the evaporation prediction method further includes the following step of obtaining the second correlation relationship: Obtaining a curve of the antimony evaporation constant changing with the time of being placed in the single crystal furnace; A functional expression between the antimony evaporation constant and the discharge time is determined according to the change curve.

5. The evaporation prediction method according to claim 4, characterized in that: Determining the functional expression between the antimony evaporation constant and the discharge time comprises: Determine the values ​​of the constants in the following formulas: This is m•t n ; In the above formula, Ev is the antimony evaporation constant, t is the release time, and m and n are both constants.

6. The evaporation prediction method according to any one of claims 1 to 3, characterized in that: Obtaining the first predicted antimony evaporation amount in the straight-pulling equal-diameter stage comprises: The first predicted antimony evaporation amount N1 is calculated according to the following formula: N1=Ev•A•C1; In the above formula, Ev is the antimony evaporation constant, A is the antimony evaporation surface area, and C1 is the antimony concentration in the single crystal furnace.

7. The evaporation prediction method according to any one of claims 1 to 3, characterized in that: Obtaining the second predicted antimony evaporation amount in the direct pulling and releasing stage comprises: The second predicted antimony evaporation amount N2 is calculated according to the following formula: C = C0e^-(Ev•A / U) N2=(C0-C)•V; In the above formula, C is the antimony concentration after antimony evaporation, C0 is the antimony concentration after time t, Ev is the antimony evaporation constant, A is the antimony evaporation surface area, U is the silicon mass in the single crystal furnace, and V is the residual material volume in the single crystal furnace.

8. An antimony-phosphorus co-doped crystal pulling evaporation amount prediction device, characterized in that: include: A model acquisition module, used to acquire a first model and a second model in a preset state in an antimony-phosphorus co-doped single crystal furnace; the first model includes a correlation between the antimony evaporation amount in the CZ phase and the antimony evaporation constant; the second model includes a correlation between the antimony evaporation amount in the CZ phase and the antimony concentration after antimony evaporation, and the antimony concentration after antimony evaporation is associated with the antimony evaporation constant; A first prediction module, configured to obtain a first predicted antimony evaporation amount in the CZE stage according to a first correlation between the antimony evaporation constant and the weight of the residual material in the single crystal furnace and the first model; A second prediction module is used to obtain a second predicted antimony evaporation amount in the direct pulling and releasing stage according to a second correlation between the antimony evaporation constant and the release time in the single crystal furnace and the second model; The calculation module is used to determine the antimony evaporation amount in the crystal pulling state according to the first predicted antimony evaporation amount and the second predicted antimony evaporation amount.

9. An evaporation prediction device, comprising a memory and a processor, wherein the memory stores a computer program, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 7 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 7 are implemented.

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