Semiconductor process chamber, semiconductor process equipment and semiconductor process method

Abstract

The invention provides a semiconductor process chamber, semiconductor process equipment and a semiconductor process method, relates to the technical field of semiconductor processing processes, and is designed for solving the problem that a telescopic sealing element in an existing process chamber is short in service life. The semiconductor process chamber comprises: a reaction chamber; the transmission cavity is positioned below the reaction cavity and is communicated with the reaction cavity through a bottom opening; a base; the driving mechanism is in transmission connection with the base to drive the base to ascend and descend; the telescopic sealing assembly comprises an upper sealing ring and a telescopic sealing piece, and the upper sealing ring is configured to abut against the bottom opening under the action of upward lifting force applied by the driving mechanism so as to seal the bottom opening; the top end of the telescopic sealing piece is in sealed connection with the bottom face of the upper sealing ring, and the bottom end of the telescopic sealing piece is in sealed connection with the bottom wall of the transmission cavity. According to the semiconductor process chamber, the aging speed of the telescopic sealing element can be slowed down, the service life of equipment is prolonged, and the stability of the equipment is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a semiconductor process chamber, semiconductor process equipment and a semiconductor process method. Background Art

[0002] Affected by the popularity and replacement of electronic products, the semiconductor industry has developed rapidly, especially ultra-large-scale integrated circuits. Each foundry urgently needs the best expansion plan, that is, to maximize the ratio of production capacity to floor space plus operation and maintenance costs. Compared with large-capacity multi-chamber equipment, the use of existing single-chamber or dual-chamber equipment to expand production capacity will inevitably increase the floor space and operation and maintenance costs. In this case, large-capacity multi-chamber equipment has obvious advantages, and large-capacity multi-chamber equipment is bound to become the first consideration of each foundry.

[0003] Driven by this, various equipment manufacturers have developed large-capacity equipment in order to compete for the large-capacity multi-chamber equipment market. The key technology of large-capacity multi-chamber equipment is the independence of each reaction chamber, that is, the isolation and sealing structure. Taking CVD\ALD as an example, the isolation and sealing structure can ensure the stability and uniformity of the airflow field, and further ensure the stability and uniformity of the film formation. Due to the transmission structure of the equipment itself, the reaction chambers of large-capacity multi-chamber equipment are interconnected, the transmission cavity space is large, and the internal space flow channel is irregular, which cannot ensure smooth and uniform airflow.

[0004] However, the existing isolation sealing structure uses the elastic force of the welded bellows to provide the sealing force. The bellows is subjected to large external forces during frequent compression and extension and high temperature cooling, causing its elastic force to gradually decrease and eventually fail to function, seriously affecting the performance and stability of the equipment. Summary of the invention

[0005] The first object of the present invention is to provide a semiconductor process chamber to solve the technical problem of low life of telescopic seals in existing process chambers.

[0006] The semiconductor process chamber provided by the present invention comprises:

[0007] Reaction chamber;

[0008] A transmission chamber, located below the reaction chamber and connected to the reaction chamber through a bottom opening located at the bottom of the reaction chamber;

[0009] Pedestal;

[0010] A driving mechanism, which is in driving connection with the base to drive the base to rise and fall; and

[0011] The telescopic sealing assembly comprises an upper sealing ring and a telescopic sealing member, wherein the upper sealing ring is configured to abut against the bottom opening to seal the bottom opening under the upward lifting force applied by the driving mechanism; the top end of the telescopic sealing member is sealedly connected to the bottom surface of the upper sealing ring, and the bottom end of the telescopic sealing member is sealedly connected to the bottom wall of the transmission chamber.

[0012] In a preferred technical solution, the base comprises:

[0013] A seat body, used for supporting the wafer; and

[0014] A lifting rod portion, fixedly connected to the seat body and connected to a power output end of the driving mechanism;

[0015] A transmission block is fixedly connected to the lifting rod portion, and the transmission block is provided with a circumferential outer flange for abutting upward against the upper sealing ring.

[0016] In the preferred technical solution, the circumferential outer flange is composed of multiple sections, and the multiple sections of the circumferential outer flange are located at the same axial position of the transmission block; the upper sealing ring has multiple sections of circumferential inner flanges, and the multiple sections of the circumferential inner flanges are located at the same axial position of the upper sealing ring, and the space between adjacent circumferential outer flanges can allow the circumferential inner flanges to pass through axially, and the space between adjacent circumferential inner flanges can allow the circumferential outer flanges to pass through axially; the circumferential inner flange and the circumferential outer flange are configured as follows: during the assembly process, after the circumferential inner flange and the circumferential outer flange pass through each other, the circumferential outer flange can be rotated to the same circumferential position as the circumferential inner flange.

[0017] In a preferred technical solution, the upper surface of the circumferential inner flange of the upper sealing ring is provided with a stepped hole whose radius gradually increases from bottom to top.

[0018] In a preferred technical solution, the lifting rod portion is provided with an axial positioning flange, and the transmission block is provided with an axial positioning groove, and the axial positioning groove cooperates with the axial positioning flange.

[0019] In a preferred technical solution, the transmission block comprises at least two sub-blocks that are fixedly connected, and the joint surfaces of adjacent sub-blocks are parallel to or coplanar with the axis of the lifting rod part.

[0020] In a preferred technical solution, the upper sealing ring includes a flange portion, which is located at the bottom of the side wall of the upper sealing ring and extends radially outward, and the upper end surface of the flange portion is provided with a raised sealing structure; the top wall of the transmission cavity is provided with an accommodating space to accommodate the flange portion, the radius of the accommodating space is larger than the bottom opening and is adjacent to the bottom opening, and the raised sealing structure is sealed and connected to the top wall of the accommodating space.

[0021] The beneficial effects brought by the semiconductor process chamber of the present invention are:

[0022] By applying an upward lifting force by the driving mechanism, the upper sealing ring abuts against the bottom opening, so the force of the upper sealing ring abutting against the bottom opening mainly comes from or even entirely comes from the force applied by the driving mechanism, rather than the upward force mainly provided by the telescopic seal in the extended state. The seal of the upper sealing ring abutting against the bottom opening can be separated from the elasticity of the telescopic seal, and the pressure on the telescopic seal when it is extended to the upper sealing ring abutting against the bottom opening can be significantly reduced, and even in this state, it is subjected to tension. Especially in the latter case, the force on the telescopic seal is near zero in a part of its telescopic range, and its force can be significantly reduced in other intervals. Even for situations other than the latter, the force on the telescopic seal during or after the process can be significantly reduced as a whole, and even if other factors such as temperature have not changed, the aging and failure rate of the telescopic seal can be significantly slowed down, thereby improving the service life and stability of the equipment.

[0023] The second object of the present invention is to provide a semiconductor process equipment to solve the technical problem of low life of telescopic seals in existing process chambers.

[0024] The semiconductor process equipment provided by the present invention includes any one of the semiconductor process chambers described above, wherein the semiconductor process chamber includes a plurality of the reaction chambers, and the number of the pedestals is consistent with the number of the reaction chambers; a transfer robot is provided in the transfer chamber for transferring wafers between the pedestals corresponding to different reaction chambers.

[0025] By setting the above-mentioned semiconductor process chamber in the semiconductor process equipment, accordingly, the semiconductor process equipment has all the advantages of the above-mentioned semiconductor process chamber, which will not be described one by one here.

[0026] The third object of the present invention is to provide a semiconductor process method to solve the technical problem of low life of telescopic seals in existing process chambers.

[0027] The semiconductor process method provided by the present invention is applied to the above-mentioned semiconductor process equipment, and the semiconductor process method comprises:

[0028] placing a pre-process wafer on the base;

[0029] Controlling the driving mechanism to drive the base to rise and enter the reaction chamber, and controlling the driving mechanism to drive the upper sealing ring to rise and seal the bottom opening;

[0030] Conduct semiconductor processing;

[0031] Controlling the driving mechanism to drive the base and the upper sealing ring to descend into the transmission chamber;

[0032] The processed wafer is removed from the susceptor.

[0033] In the preferred technical solution,

[0034] Placing the pre-processed wafer on the base includes:

[0035] Placing a pre-processed wafer on a partial base, wherein the partial base is a base in the transmission cavity corresponding to a transmission port of the transmission cavity;

[0036] Controlling the transfer robot to transfer the pre-processed wafers on some of the bases to other bases;

[0037] placing the pre-processed wafer on the partial base again;

[0038] The method of removing the processed wafer from the base comprises:

[0039] removing the processed wafer from the partial base;

[0040] Controlling the transfer robot to transfer the processed wafers on the other bases to the partial bases;

[0041] The processed wafer on the partial base is removed again.

[0042] The beneficial effects brought by the semiconductor process method of the present invention are:

[0043] By adopting a driving mechanism to drive the upper sealing ring to rise to seal the bottom opening, rather than using the elasticity of the telescopic sealing assembly to push the upper sealing ring for sealing, the overall force applied to the telescopic seal during the process can be reduced. In particular, during the process, the temperature of the telescopic seal is relatively high, and reducing its force is more conducive to extending its service life and improving the stability of the process equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the background technology, the drawings required for use in the embodiments or the background technology description will be briefly introduced below. Obviously, the drawings in the following description are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0045] Figure 1 A schematic diagram of the structure of the semiconductor process chamber provided in the first embodiment of the present invention when the base is in a low position, i.e., a wafer transfer position;

[0046] Figure 2 A schematic diagram of the structure of the semiconductor process chamber provided in the first embodiment of the present invention when the base is in a high position, i.e., a process position;

[0047] Figure 3 A schematic structural diagram of a telescopic sealing assembly in a semiconductor process chamber provided in Embodiment 1 of the present invention;

[0048] Figure 4 A schematic diagram of the structure of a base in a semiconductor process chamber provided in Embodiment 1 of the present invention;

[0049] Figure 5 A schematic structural diagram of an upper sealing ring in a semiconductor process chamber provided in Embodiment 1 of the present invention;

[0050] Figure 6 for Figure 5 A top view of

[0051] Figure 7 A top view of a transmission block in a semiconductor process chamber provided in the first embodiment of the present invention;

[0052] Figure 8 A schematic structural diagram of a telescopic sealing assembly and a base in a semiconductor process chamber provided in Embodiment 1 of the present invention;

[0053] Fig. 9 A top view of a transmission cavity in a semiconductor process equipment provided in the second embodiment of the present invention;

[0054] Fig.10 A schematic flow chart of a semiconductor process method provided in Embodiment 3 of the present invention;

[0055] Fig.11 A schematic diagram of a process of placing a pre-process wafer on a base in a semiconductor process method provided in Embodiment 3 of the present invention;

[0056] Fig.12 A schematic diagram of a process of removing a processed wafer from a base in a semiconductor process method provided in Embodiment 3 of the present invention;

[0057] Fig.13 A schematic diagram comparing the force magnitude of the telescopic seal in the semiconductor process equipment provided in the first embodiment of the present invention with the force magnitude of the telescopic seal in the related art.

[0058] Description of reference numerals:

[0059] 100-reaction chamber; 110-bottom opening;

[0060] 200-transmission cavity; 210-accommodation space;

[0061] 300-base; 310-base body; 311-guide hole, 320-lifting rod; 321-axial positioning flange; 330-transmission block; 331-circumferential outer flange; 332-axial positioning groove; 333-sub-block; 340-support column;

[0062] 400-driving mechanism;

[0063] 500- telescopic seal assembly; 510- upper seal ring; 511- top plate; 512- circumferential inner flange; 513- step hole; 514- third end face seal ring; 515- flange; 516- seal ring pressure ring; 520- telescopic seal; 521- upper flange; 522- first end face seal ring; 523- lower flange; 524- second end face seal ring;

[0064] 600-transfer robot; 610-robot drive assembly; 620-upper connecting piece; 630-transfer finger; 700-wafer. DETAILED DESCRIPTION

[0065] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0066] In the related art, when the semiconductor process chamber is in process, the upper sealing ring abuts against the bottom opening to achieve sealing, and the upward abutting force of the upper sealing ring comes from the elastic force of the bellows as a telescopic seal. However, the telescopic seal needs to be in an extended state, and the elastic force it provides can still support the upper sealing ring upward and make the upper sealing ring abut against the bottom opening under pressure. At this time, the telescopic seal bears the downward pressure of the reaction of the upper sealing ring. If the base and the upper sealing ring drop, the length of the telescopic seal decreases, and the telescopic seal is subjected to greater pressure. Therefore, the telescopic seal will be subjected to greater pressure during the entire process and during the wafer transfer stage after the process. In addition, the temperature is higher during the process, and lower after the process; the temperature fluctuation range is larger, which will also significantly increase the aging and failure rate of the telescopic seal, thereby causing the bellows.

[0067] like Fig.13 As shown, Fig.13 In the figure, the horizontal axis represents the elongation of the telescopic seal, and the vertical axis represents the force of the telescopic seal. Since the comparison is only schematic, the specific physical units are not described in the figure. Fig.13In the figure, different vertical dotted lines represent different elongations, which can be an absolute distance or a percentage of the elongation of the telescopic seal relative to its minimum length. An elongation of 0 corresponds to the state of the telescopic seal when the base is in the lowest position - the film transfer position, and the vertical dotted line on the far right indicates that the base has risen to the process position and the position when the upper sealing ring abuts the bottom opening, that is, the elongation of the telescopic seal when it is extended to the maximum in the semiconductor process chamber. Fig.13 In the figure, different horizontal dotted lines represent different forces. The area above the horizontal coordinate axis indicates that the external force on the telescopic seal is pressure, and the area below the horizontal coordinate axis indicates that the external force on the telescopic seal is tension. The elongation of the telescopic seal when the force is 0 represents the elongation of the telescopic seal in its natural state relative to the elongation of the telescopic seal when the base is in the transmission position.

[0068] Fig.13 The oblique solid line in the figure represents the stress condition of the telescopic seal in the related art. It can be seen from the figure that even when it is stretched to the maximum elongation, the pressure on it is still significantly greater than zero. In other words, in the related art, in order to ensure that the upper sealing ring of the telescopic seal can effectively seal when the base is in the process position, for example, the elongation of the telescopic seal at this time is 100 (this data is only a number defined for the convenience of explanation, and does not represent the specific size of the telescopic seal or the elongation ratio relative to the minimum length, so it is also dimensionless, the same below). Correspondingly, the intersection points of several vertical dotted lines with the horizontal coordinate axis are 25, 50, and 75 respectively. And Fig.13 In the figure, the intersection of the solid line and the horizontal coordinate axis can be, for example, 150, which means that the extension of the telescopic seal in the natural state is 150. That is, when the telescopic seal is extended to the maximum extension in the semiconductor process chamber, the length is significantly less than the length in the natural state, and the telescopic seal is still subject to greater pressure. Therefore, the telescopic seal will be subject to greater pressure during the entire process and the wafer transfer stage after the process. In addition, the high temperature and large temperature fluctuation range will also aggravate the aging and failure of the telescopic seal, so the aging and failure rate of the telescopic seal is faster.

[0069] Embodiment 1:

[0070] Figure 1 A schematic diagram of the structure of the semiconductor process chamber provided in the first embodiment of the present invention when the base is in a low position, i.e., a wafer transfer position; Figure 2 This is a schematic diagram of the structure of the semiconductor process chamber provided in the first embodiment of the present invention when the base is in the high position, i.e., the process position. Figure 1-Figure 2 As shown, the semiconductor process chamber provided by the first embodiment of the present invention includes:

[0071] Reaction chamber 100;

[0072] The transmission chamber 200 is located below the reaction chamber 100 and is connected to the reaction chamber 100 through a bottom opening 110 located at the bottom of the reaction chamber 100; wherein the upper end surface of the transmission chamber 200 is connected and sealed to the lower end surface of the reaction chamber 100, that is, except for the bottom opening 110, no gas flows between the reaction chamber 100 and the transmission chamber 200.

[0073] A base 300 is used to carry a wafer;

[0074] A driving mechanism 400 is connected to the base 300 to drive the base 300 to rise and fall; and

[0075] The telescopic sealing assembly 500 includes an upper sealing ring 510 and a telescopic sealing member 520. The upper sealing ring 510 is configured to abut against the bottom opening 110 to seal the bottom opening 110 under the upward lifting force applied by the driving mechanism 400; the top end of the telescopic sealing member 520 is sealedly connected to the bottom surface of the upper sealing ring 510, and the bottom end of the telescopic sealing member 520 is sealedly connected to the bottom wall of the transmission chamber 200.

[0076] Specifically, in this embodiment, the lower end of the base 300 is connected to the lifting mechanism, and the driving mechanism 400 can drive the base 300 to do lifting and lowering movements and can accurately position. When the base 300 is in a lower position, i.e., the wafer transfer position, it is located in the transfer chamber 200, and the wafer 700 can be placed on the base 300 or taken out; if the base 300 is raised to a high position, i.e., the process position, by the driving mechanism 400, it can enter the reaction chamber 100, and the wafer 700 carried by the base 300 is reacted in the reaction chamber 100.

[0077] When the susceptor 300 reacts in the reaction chamber 100 , the upper sealing ring 510 needs to abut upward against the bottom opening 110 connecting the reaction chamber 100 and the transmission chamber 200 to prevent the gas in the reaction chamber 100 from leaking into the transmission chamber 200 through the bottom opening 110 .

[0078] The driving mechanism 400 in this embodiment may be a cylinder or an electric push rod, a ball screw, a screw nut, etc. Specifically, a cylinder is used in this embodiment. The cylinder can not only adjust the output force of the driving mechanism 400 by adjusting the pressure of the compressed air to achieve adjustable sealing force, but also the cylinder can continuously output force to continuously push the upper sealing ring 510 upward to seal the bottom opening 110.

[0079] Specifically, the driving mechanism 400 is installed on the lower surface of the bottom wall of the transmission cavity 200, and a base hole is opened at the bottom of the transmission cavity 200 for the lower part of the base 300 to pass through. The base 300 is concentric with the base hole.

[0080] Specifically, in this embodiment, the telescopic seal 520 can use a bellows as its main structure. Since the top end of the telescopic seal 520 is sealed to the bottom surface of the upper sealing ring 510, and the bottom end of the telescopic seal 520 is sealed to the bottom wall of the transmission chamber 200, even if the gas in the reaction chamber 100 enters the space inside the telescopic seal 520, it will not leak into the transmission chamber 200 through the top and bottom ends of the telescopic seal 520.

[0081] The driving mechanism 400 applies an upward lifting force so that the upper sealing ring 510 abuts against the bottom opening 110. Therefore, the force of the upper sealing ring 510 abutting against the bottom opening 110 mainly or even entirely comes from the force applied by the driving mechanism 400, rather than mainly from the upward force provided by the telescopic seal 520 in the extended state. The seal of the upper sealing ring 510 abutting against the bottom opening 110 can be separated from the elasticity of the telescopic seal 520, so that the pressure on the telescopic seal 520 when the upper sealing ring abuts against the bottom opening can be significantly reduced, and the telescopic seal 520 may even be subjected to tension in this state. In particular, in situations where tension may be exerted, the force on the telescopic seal 520 fluctuates around zero within a portion of its telescopic range, that is, sometimes it is a pressure close to zero, sometimes it is a tension close to zero, and in other ranges, the magnitude of the force can be significantly reduced. For example, Fig.13 As shown, Fig.13 For the meaning of the horizontal and vertical axes, as well as the horizontal and vertical dotted lines, please refer to the previous introduction. Fig.13 The double-dotted line in FIG. 5 represents the tension on the telescopic seal 520 when the telescopic seal 520 is stretched to the maximum extension. Fig.13 In the case shown by the double-dotted line, the intersection of the double-dotted line and the horizontal coordinate axis is about 70, indicating that in this case, the length of the selected telescopic seal 520 in the natural state corresponds to an elongation of 70. In other words, the telescopic seal 520 has reached its length in the natural state before reaching the maximum elongation in the semiconductor process chamber. When it reaches the maximum elongation in the semiconductor process chamber, it is actually stretched upward by the upper sealing ring 510. As can be seen from the figure, the force of the telescopic seal 520 is close to zero in the section from about half of the elongation to the full elongation, and when the elongation is the smallest, that is, when the base runs to the lowest end, the pressure it is subjected to is also significantly reduced. Therefore, the force on the telescopic seal 520 in the entire elongation section in the process chamber, whether it is pressure or tension, is significantly reduced compared with the related art. Therefore, the speed of its aging and failure can be significantly reduced.

[0082] Even if there is no tensile force, the force applied to the telescopic seal 520 during or after the process can be significantly reduced as a whole. Fig.13 In the case shown by the single-dot dash line in Fig.13 The intersection of the single-point dash line and the horizontal coordinate axis is approximately 108, indicating that in this case, the length of the selected telescopic seal 520 in the natural state corresponds to an elongation of 108. When the base 300 runs to the process position and the upper sealing ring 510 abuts against the bottom opening 110, the telescopic seal 520 still does not reach its elongation 108 in the natural state, and the telescopic seal 520 is compressed and exerts a force on the upper sealing ring 510. However, although it is still subjected to the pressure of the upper sealing ring 510 at this time, the pressure on the telescopic seal 520 is also significantly reduced than that in the related art, and in the entire range of the base 300 running, the section of the pressure on the telescopic seal 520 is also significantly reduced than that in the related art. Therefore, even if other factors such as temperature do not change, the aging and failure rate of the telescopic seal 520 can be significantly slowed down, thereby improving the service life and stability of the equipment.

[0083] Figure 3 A schematic diagram of the structure of a telescopic sealing assembly in a semiconductor process chamber provided in Embodiment 1 of the present invention; Figure 1-Figure 3 As shown, the upper end of the bellows can be fixedly connected to an upper flange 521 by means such as welding, and the upper end face of the upper flange 521 is sealed to the lower surface of the upper sealing ring 510 via a first end face sealing ring 522, while the lower end of the bellows can also be fixedly connected to a lower flange 523 by means such as welding, and the lower end face of the lower flange 523 is sealed to the bottom wall of the transmission chamber 200 via a second end face sealing ring 524.

[0084] By applying an upward lifting force by the driving mechanism 400 so that the upper sealing ring 510 abuts against the bottom opening 110, rather than the telescopic seal 520 relying on elasticity to provide a lifting force so that the upper sealing ring 510 abuts against the bottom opening 110, the force of the telescopic seal 520 when stretched can be significantly reduced, and it can even be achieved that there is no tension or pressure in the stretched state, or it is subjected to tension in the stretched state. Furthermore, the force applied to the telescopic seal 520 during or after the process is significantly reduced as a whole, thereby significantly slowing down the aging and failure rate of the telescopic seal 520, and improving the service life and stability of the equipment.

[0085] Figure 4 A schematic diagram of the structure of a base in a semiconductor process chamber provided in Embodiment 1 of the present invention; Figure 4 As shown, preferably, the base 300 includes:

[0086] The seat body 310 is used to carry the wafer 700 ; and the lifting rod part 320 is fixedly connected to the seat body 310 and connected to the power output end of the driving mechanism 400 .

[0087] Specifically, the seat body 310 is roughly disc-shaped, and the top of the lifting rod part 320 is fixedly connected to the center position of the bottom surface of the seat body 310. In this embodiment, the lifting rod part 320 is a hollow tube. The use of the hollow tube-shaped lifting rod part 320 can significantly reduce the overall weight of the base 300 and reduce the load of the driving mechanism 400. The bottom of the lifting rod part 320 is connected to the power output end of the driving mechanism 400. Specifically, an internal thread can be provided at the bottom of the lifting rod part 320, which is threadedly connected to the piston rod of the cylinder serving as the power output end of the driving mechanism 400. Or the end face of the bottom end of the lifting rod part 320 is connected to the end face of the power output end of the driving mechanism 400 through a threaded connector.

[0088] The lifting rod portion 320 is used to fix the connection seat body 310 and the power output end of the driving mechanism 400, so that the connection position between the power output end of the driving mechanism 400 and the lifting rod portion 320 can be lowered. Even if the base 300 rises to the highest position, the power output end of the driving mechanism 400 will not extend into the telescopic seal 520 located in the transmission chamber 200, thereby reducing the temperature of the power output end of the driving mechanism 400 to increase its service life.

[0089] like Figure 1 , Figure 2 and Figure 4 As shown, preferably, the base 300 further includes: a transmission block 330 , which is fixedly connected to the lifting rod portion 320 , and the transmission block 330 is provided with a circumferential outer flange 331 for abutting against the upper sealing ring 510 upwards.

[0090] Specifically, the transmission block 330 abuts against the upper sealing ring 510 from below. During the descending process, the upper sealing ring 510 will be subjected to the upward elastic force generated by the compression of the telescopic seal 520. However, since the seat body 310 is above the upper sealing ring 510, the seat body 310 can also exert a downward force on the upper sealing ring 510 to drive the upper sealing ring 510 to descend and further compress the telescopic seal 520.

[0091] By setting the transmission block 330 to abut the upper sealing ring 510 upward, the area over which the base 300 applies force to the transmission block 330 can be increased, thereby improving the movement stability of the upper sealing ring 510. At the same time, it is also beneficial for the upper sealing ring 510 to be subjected to more uniform force, so that the upper sealing ring 510 can also evenly close the bottom opening 110.

[0092] Figure 5 A schematic structural diagram of an upper sealing ring in a semiconductor process chamber provided in Embodiment 1 of the present invention; Figure 6 for Figure 5 A top view of Figure 7A top view of a transmission block in a semiconductor process chamber provided in the first embodiment of the present invention; Figure 8 A schematic diagram of the structure of a telescopic sealing assembly and a base in a semiconductor process chamber provided in Embodiment 1 of the present invention; Figure 5-Figure 8 As shown, preferably, the circumferential outer flange 331 is multi-sectioned, and the multi-section circumferential outer flange 331 is located at the same axial position of the transmission block 330; the upper sealing ring 510 has multi-section circumferential inner flanges 512, and the multi-section circumferential inner flanges 512 are located at the same axial position of the upper sealing ring 510, and the space between adjacent circumferential outer flanges 331 can allow the circumferential inner flanges 512 to pass axially, and the space between adjacent circumferential inner flanges 512 can allow the circumferential outer flanges 331 to pass axially; the circumferential inner flange 512 and the circumferential outer flange 331 are configured as follows: during the assembly process, after the circumferential inner flange 512 and the circumferential outer flange 331 pass through each other, the circumferential outer flange 331 can be rotated to the same circumferential position as the circumferential inner flange 512.

[0093] Specifically, the upper sealing ring 510 includes a top plate portion 511, a through hole is provided at the center of the top plate portion 511, a circumferential inner flange 512 is provided at the edge of the through hole, and multiple sections of the circumferential inner flange 512 are located at the same axial position of the upper sealing ring 510, that is, if the axis of the upper sealing ring 510 is in a vertical state, the multiple sections of the circumferential inner flange 512 are provided at the same height. In this embodiment, the upper sealing ring 510 can be provided with three sections of the circumferential inner flange 512, and the three sections of the circumferential inner flange 512 are evenly distributed within a 360° circumference. The central angle corresponding to each section of the circumferential inner flange 512 is approximately 30°, that is, the central angle corresponding to the space between two adjacent circumferential inner flanges 512 is approximately 90°. The multiple sections of circumferential outer flanges 331 on the transmission block 330 are located at the same axial position of the transmission block 330, that is, if the axis of the transmission block 330 is in a vertical state, the multiple sections of circumferential outer flanges 331 are arranged at the same height, and the number of circumferential outer flanges 331 on the transmission block 330 is the same as that of the circumferential inner flange 512, which is also three sections. The three sections of circumferential outer inner flanges are evenly distributed within a 360° circumference. The center angle corresponding to each section of the circumferential outer flange 331 is approximately 60°. Therefore, the circumferential outer flange 331 with a center angle of approximately 60° can smoothly and conveniently pass through the space with an angle of 90° between two adjacent circumferential inner flanges 512 along the axial direction, and accordingly, the circumferential inner flange 512 with a center angle of approximately 30° can also smoothly and conveniently pass through the space with a center angle of approximately 60° between two circumferential outer flanges 331. In this embodiment, the circumferential outer flange 331 and the circumferential inner flange 512 can both be fan-shaped.

[0094] Among them, the circumferential outer flange 331 can be rotated to the same circumferential position as the circumferential inner flange 512, which not only means that the angular bisector of the corresponding central angle of the circumferential outer flange 331 coincides with the angular bisector of the corresponding central angle of the circumferential inner flange 512, but also that the central angle corresponding to the circumferential inner flange 512 can completely enter the range of the central angle of the circumferential outer flange 331.

[0095] By setting the circumferential outer flange 331 to be multiple sections, and the circumferential inner flange 512 of the upper sealing ring 510 to be multiple sections, when installing the upper sealing ring 510, the transmission block 330 and the lifting rod part 320 are first fixed, and then the upper sealing ring 510 is moved axially to the bottom surface of the seat body 310, so that the circumferential inner flange 512 and the circumferential outer flange 331 can pass through the gap space of the other, and then the upper sealing ring 510 can be rotated to achieve the circumferential outer flange 331 supporting the circumferential inner flange 512, thereby improving the convenience of installation. Since in actual work, the upper sealing ring 510 will not bear a large circumferential force sufficient to cause it to rotate, the structure of directly using the circumferential outer flange 331 to support the circumferential inner flange 512 axially can meet its force requirements.

[0096] In another implementation, it is not necessary to separately set multiple sections of circumferential outer flanges 331 and multiple sections of circumferential inner flanges 512. For example, the circumferential inner flange 512 and the circumferential outer flange 331 can both be a complete circle of flanges. During installation, the upper sealing ring 510 can be firstly put on the lifting rod part 320 until the top surface of the upper sealing ring 510 contacts the bottom surface of the seat body 310, and then the transmission block 330 is installed on the lifting rod part 320 and fixed to the lifting rod part 320.

[0097] like Figure 5 and Figure 6 As shown, preferably, the upper surface of the circumferential inner flange 512 of the upper sealing ring 510 is provided with a stepped hole 513 whose radius gradually increases from bottom to top.

[0098] Specifically, if the circumferential inner flange 512 provided on the upper sealing ring 510 is a multi-section circumferential inner flange 512, then the upper surface of each section of the circumferential inner flange 512 is stepped, gradually rising along the axial direction away from the upper sealing ring 510, and the side walls of the stepped upper surfaces of each section of the circumferential inner flange 512 can be in concentric circles. More specifically, the side wall of the first step of each section of the circumferential inner flange 512 is on the same circumference with the axis of the upper sealing ring 510 as the center, and the side wall of the second step of each section of the circumferential inner flange 512 is on the same circumference with the axis of the upper sealing ring 510 as the center, and so on. If the circumferential inner flange 512 of the upper sealing ring 510 is a complete and continuous circumferential inner flange 512, then the step hole 513 is a step hole 513 with a continuous end face and side wall.

[0099] By arranging a step hole 513 with a radius gradually increasing from bottom to top on the upper surface of the circumferential inner flange 512, an air flow channel can be formed between the base 300 and the lifting rod portion 320. When gas is filled into the interior of the telescopic seal 520, if a positive pressure is maintained inside the telescopic seal 520 relative to the reaction chamber 100, the gas in the reaction chamber 100 cannot flow into the interior of the telescopic seal 520, thereby further reducing the possibility that the gas in the reaction chamber 100 first enters the interior of the telescopic seal 520 and then enters the transmission chamber 200, thereby improving the sealing performance of the transmission chamber 200 relative to the reaction chamber 100.

[0100] like Figure 4 and Figure 8 As shown, preferably, the lifting rod portion 320 is provided with an axial positioning flange 321 , and the transmission block 330 is provided with an axial positioning groove 332 , and the axial positioning groove 332 cooperates with the axial positioning flange 321 .

[0101] In this embodiment, the lifting rod 320 is a hollow tube, so if the axial positioning groove 332 is provided on the lifting rod 320, the local wall thickness of the lifting rod 320 will be too small, which is not conducive to ensuring the load-bearing capacity of the lifting rod 320. Therefore, the axial positioning flange 321 is provided on the lifting rod 320, and the axial positioning groove 332 is provided on the transmission block 330.

[0102] The axial positioning flange 321 and the axial positioning groove 332 can be arranged along the entire circumference, and accordingly, the transmission block 330 can be a split structure to facilitate the assembly of the transmission block 330 and the lifting rod part 320. Of course, in addition to the axial positioning function between the axial positioning flange 321 and the axial positioning groove 332, the outer circumference of the axial positioning flange 321 and the inner circumference of the axial positioning groove 332 can also be matched to radially position the transmission block 330 and the lifting rod part 320. However, the radial positioning of the transmission block 330 and the lifting rod part 320 can also be achieved by the outer circumference of the lifting rod part 320 and the inner circumference of the transmission block 330, and is not limited to the circumferential surface matching of the axial positioning flange 321 and the axial positioning groove 332 of the present application.

[0103] By providing the axial positioning flange 321 and the axial positioning groove 332, the cooperation of the two can be utilized to realize the axial positioning of the lifting rod portion 320 and the transmission block 330 in two opposite directions, so as to ensure that the driving mechanism 400 can drive the upper sealing ring 510 to move into place through the lifting rod portion 320 and tightly seal the bottom opening 110.

[0104] In another implementation, the transmission block 330 may not be axially fixed relative to the lifting rod 320 by the axial positioning flange 321 and the axial positioning groove 332. For example, the transmission block 330 may be axially fixed relative to the lifting rod 320 by a top screw, or an external thread may be provided on the lifting rod 320 and an internal thread may be provided on the transmission block 330 to relatively fix the two, so as to realize the movement of the upper sealing ring 510 driven by the lifting rod 320. Of course, if the latter connection method is adopted, the diameter of the lifting rod 320 from at least one end to the position where the external thread is provided is required to be smaller than the bottom diameter of the external thread.

[0105] like Figure 7 As shown, preferably, the transmission block 330 includes at least two sub-blocks 333 that are fixedly connected, and the joint surfaces of adjacent sub-blocks 333 are coplanar with the axis of the lifting rod portion 320 .

[0106] Specifically, in this embodiment, the number of sub-blocks 333 is two, and the splicing surface of the two sub-blocks 333 refers to the contact surfaces that contact each other after the two sub-blocks 333 are spliced ​​together. The splicing surface is coplanar with the axis of the lifting rod part 320. When the lifting rod part 320 is in a vertical state, it means that the two sub-blocks 333 are spliced ​​along the vertical plane where a certain diameter of the lifting rod part 320 is located.

[0107] In addition, in this embodiment, the two sub-blocks 333 can be symmetrically arranged, that is, each sub-block 333 has a complete circumferential outer flange 331 and a half circumferential outer flange 331. The two sub-blocks 333 can be threadedly connected and fixed by a male threaded connector.

[0108] By providing two sub-blocks 333, the two sub-blocks 333 can be radially mounted on the lifting rod 320, without the need to move the transmission block 330 for a long distance along the axial direction of the lifting rod 320, and without the need to set at least one of the two ends of the lifting rod 320 to have a diameter smaller than the inner diameter of the transmission block 330, thereby improving the flexibility of the design of the lifting rod 320. In addition, when the axial positioning groove 332 and the axial positioning flange 321 are provided, it is also convenient to install the sub-block 333 on the lifting rod 320 in the radial direction without being affected by the axial positioning flange 321.

[0109] In another implementation, the shapes of the two sub-blocks 333 may also be asymmetric, that is, of the two sub-blocks 333, one is U-shaped, similar to the shape of a U-shaped magnet, and the other sub-block 333 is flat, as long as the two can be fixedly connected by threaded connectors and clamp the lifting rod 320 or both are provided with axial positioning grooves 332 that cooperate with the axial positioning flanges 321, so as to achieve the fixing of the transmission block 330 and the lifting rod 320. In this implementation, the joint surface of the two sub-blocks 333 is parallel to the axis of the lifting rod 320.

[0110] Alternatively, the transmission block 330 can be composed of three sub-blocks 333 of the same shape, each sub-block is fixedly connected to two adjacent sub-blocks 333, and each sub-block is provided with a circumferential outer flange 331. The joint surfaces of two adjacent sub-blocks 33 pass through the axis of the lifting rod 320.

[0111] like Figure 3 , Figure 5 , Figure 6 and Figure 8 As shown, preferably, the upper sealing ring 510 includes a flange portion 515, which is located at the bottom of the side wall of the upper sealing ring 510 and extends radially outward, and the upper end surface of the flange portion 515 is provided with a raised sealing structure; the top wall of the transmission cavity 200 is provided with an accommodating space 210 to accommodate the flange portion 515, the radius of the accommodating space 210 is greater than the radius of the bottom opening 110 and is adjacent to the bottom opening 110, and the raised sealing structure is sealed and connected to the top wall of the accommodating space 210.

[0112] Specifically, in this embodiment, the raised sealing structure can be a third end face sealing ring 514 provided on the upper end face of the flange portion 515, the third end face sealing ring 514 is embedded in the annular groove on the upper end face of the flange portion 515, and the third end face sealing ring 514 protrudes from the upper surface of the flange portion 515. When the reaction temperature of the reaction chamber 100 is less than 200°C, the third end face sealing ring 514 can be used for sealing. When the reaction temperature of the reaction chamber 100 is greater than or equal to 200°C, the raised sealing structure can also be an annular convex ridge provided on the upper end face of the flange portion 515, and the cross section of the annular convex ridge can even be a triangle or a semicircle with a small top and a large bottom, preferably a circle, so as to achieve a sealed connection between the upper end face of the flange portion 515 and the bottom opening 110.

[0113] In addition, in order to facilitate the replacement of the third end face sealing ring 514, a sealing ring pressing ring 516 fixed to the flange portion 515 through a threaded connector can also be provided, and the sealing ring pressing ring 516 is used to radially press the third end face sealing ring 514. When the third end face sealing ring 514 is damaged or needs to be replaced, the threaded connector is removed, the sealing ring pressing ring 516 can be taken out, and then the original third end face sealing ring 514 is removed and replaced with a new third end face sealing ring 514.

[0114] By providing a raised sealing structure and sealingly connecting it to the top wall of the accommodating space 210, uniform sealing in the entire circumferential direction can be achieved, and no angular alignment is required between the flange portion 515 and the accommodating space 210, thereby simplifying the structure and improving installation efficiency.

[0115] Embodiment 2:

[0116] Embodiment 2 also provides a semiconductor process equipment, which includes the semiconductor process chamber of the above-mentioned embodiment 1, and the semiconductor process chamber includes multiple reaction chambers 100, and the bases 300 correspond one to one with the reaction chambers 100; a transfer robot 600 is arranged in the transfer chamber 200, which is used to transfer the wafer 700 between the bases 300 corresponding to different reaction chambers 100.

[0117] By setting the above-mentioned semiconductor process chamber in the semiconductor process equipment, accordingly, the semiconductor process equipment has all the advantages of the above-mentioned semiconductor process chamber, which will not be described one by one here.

[0118] Fig. 9 A top view of a transmission cavity in a semiconductor process equipment provided in the second embodiment of the present invention; Figure 1 , Figure 2 and Fig. 9 As shown, specifically, a manipulator through hole (not shown) is provided on the bottom wall of the transmission chamber 200, and the top end of the output shaft of the manipulator driving assembly 610 passes through the manipulator through hole and is fixedly connected to the upper connecting member 620. The center of the manipulator through hole is the center of the square where the base 300 is distributed. The upper connecting member 620 is fixedly connected with a transmission finger 630. In this embodiment, the number of transmission fingers 630 is consistent with the number of bases 300, and there are also four of them - the first transmission finger, the second transmission finger, the third transmission finger and the fourth transmission finger, which correspond to the first transmission finger, the second transmission finger, the third transmission finger and the fourth transmission finger before the process starts. Fig.10 The transfer fingers 630 are located on the left, top, right and bottom of the base 300. The space between each base 300 can accommodate the transfer fingers 630, and the lifting and lowering of the base 300 will not interfere with the transfer fingers 630. The robot drive assembly 610 can drive the upper connecting member 620 and the transfer fingers 630 fixed thereon to perform lifting and lowering movements, as well as rotational movements around the axis of the upper connecting member 620, so that the transfer fingers 630 can remove the wafers 700 on some bases 300 and place them on other bases 300.

[0119] The semiconductor process chamber includes a plurality of reaction chambers 100 , and the number of the pedestals 300 is the same as the number of the reaction chambers 100 ; a transfer robot 600 is disposed in the transfer chamber 200 for transferring the wafer 700 between the pedestals 300 corresponding to different reaction chambers 100 .

[0120] In this embodiment, four bottom openings 110 are provided at the top of the transfer chamber 200. Each bottom opening 110 can accommodate a base 300, so that the base 300 can drive the wafer 700 into the reaction chamber 100 for reaction. The four bottom openings 110 and the corresponding bases 300 are arranged in a square. Fig.10 As shown in the example, Fig.10 The base 300 at the upper left is a first base, the base 300 at the upper right is a second base, the base 300 at the lower right is a third base, and the base 300 at the lower left is a fourth base.

[0121] In this embodiment, the base 300 is provided with a plurality of guide holes 311 extending in the vertical direction in the circumferential direction, and the support column 340 passes through the guide holes 311 and can slide smoothly in the guide holes 311. When the base 300 is in a low position, the bottom surface of the support column 340 contacts the bottom wall of the transmission chamber 200. Under the upward supporting force of the bottom wall of the transmission chamber 200, the support column 340 is lifted relative to the base 300, that is, the upper end surface of the support column 340 is higher than the upper end surface of the base 300. If a wafer 700 is placed on the base 300 at this time, the wafer 700 is supported by the support column 340 instead of directly contacting the upper end surface of the base 300. The space where the top of the support column 340 is higher than the upper end surface of the base 300 leaves space for the transmission of the wafer 700, that is, the transmission finger 630 can extend into the space between the base 300 and the wafer 700 and lift the wafer 700.

[0122] When the base 300 rises, the outer conical surface at the top of the support column 340 contacts the inner conical surface at the top of the guide hole 311 on the base 300, and the support column 340 is affected by gravity and does not rise. As the base 300 rises, the portion of the top of the support column 340 that is higher than the upper end surface of the base 300 gradually shortens, and the space between the lower end surface of the wafer 700 and the upper end surface of the base 300 is compressed until the top of the support column 340 is completely retracted into the guide hole 311, and the lower end surface of the wafer 700 contacts the upper end surface of the base 300. The wafer 700 can be directly carried by the base 300 and driven by the base 300 to rise. The inner conical surface at the top of the guide hole 311 rises and contacts the outer conical surface at the top of the support column 340, so that the support force of the conical surface is used to offset the gravity, and the support column 340 rises to the process position with the base 300.

[0123] Embodiment three:

[0124] Fig.10 A schematic diagram of a semiconductor process method according to a second embodiment of the present invention; Fig.10 As shown, the third embodiment of the present invention provides a semiconductor process method, which is applied to the semiconductor process chamber of the first embodiment above. The semiconductor process method includes:

[0125] S10. Placing the pre-process wafer on the base 300;

[0126] S20. Control the drive mechanism 400 to drive the base 300 to rise and enter the reaction chamber 100, and control the drive mechanism 400 to drive the upper sealing ring 510 to rise and seal the bottom opening 110;

[0127] S30. Perform semiconductor process;

[0128] S40. Control the driving mechanism 400 to drive the base 300 and the upper sealing ring 510 to descend into the transmission chamber 200 ; wherein, the force that causes the upper sealing ring 510 to descend comes from the downward pressure of the base 300 on the upper sealing ring 510 , thereby compressing the telescopic sealing member 520 .

[0129] S50 . Remove the processed wafer from the base 300 .

[0130] By using the driving mechanism 400 to drive the upper sealing ring 510 to rise to seal the bottom opening 110, rather than using the elasticity of the telescopic seal 520 to push the upper sealing ring 510 for sealing, the overall force on the telescopic seal 520 during the process can be reduced. In particular, during the process, the temperature of the telescopic seal 520 is relatively high, and reducing its force is more conducive to extending its service life and improving the stability of the process equipment.

[0131] Among them, S30 also includes: when performing a semiconductor process, a process gas is introduced into the telescopic seal 520 through a purge port. Specifically, the purge port not shown in the figure is located in the drive mechanism 400. By introducing the process gas through the water sweep port, the gas pressure in the internal space of the telescopic seal 520 below the base 300 can be made greater than the gas pressure in the reaction chamber 100, thereby preventing the gas in the reaction chamber 100 from entering the space below the base 300. Since the gas in the reaction chamber 100 may contain particles, if these particles leak into the telescopic seal 520 or even leak into the transmission chamber 200 along with the gas in the reaction chamber 100, on the one hand, the particles will accumulate on the inner wall of the telescopic seal 520, affecting the service life of the telescopic seal 520, and on the other hand, the particles will contaminate the transmission chamber 200, thereby affecting the cleanliness of the transmission chamber 200.

[0132] Fig.11 This is a schematic diagram of the process of placing a pre-process wafer on a base in the semiconductor process method provided in the third embodiment of the present invention; Fig.11 As shown, if the above-mentioned process chamber is a semiconductor process chamber in the semiconductor process equipment provided in the second embodiment, preferably, S10. placing a pre-process wafer on the base 300 includes:

[0133] S11. Place the pre-process wafer on a portion of the base 300, where the portion of the base is the base 300 in the transmission cavity 200 corresponding to the transmission port of the transmission cavity 200;

[0134] S12. Control the transfer robot 600 to transfer the pre-processed wafer on some bases to other bases;

[0135] S13. placing the pre-process wafer on the partial base again;

[0136] Fig.12 This is a schematic diagram of the process of removing the processed wafer from the base in the semiconductor process method provided in the third embodiment of the present invention. Fig.12 As shown, S50. removing the processed wafer on the base 300, including:

[0137] S51. Remove the processed wafer from part of the base;

[0138] S52. Control the transfer robot 600 to transfer the processed wafers on other bases to some bases;

[0139] S53. Remove the processed wafer from the partial base again.

[0140] like Fig. 9 As shown, preferably, a plurality of bases 300 are arranged around a transfer robot 600, and the transfer robot 600 includes a robot drive assembly 610, an upper connecting member 620, and a transfer finger 630 fixedly arranged on the upper connecting member 620;

[0141] S12. Controlling the transfer robot 600 to transfer the pre-processed wafers on some pedestals to other pedestals, including:

[0142] S121. Control the robot drive assembly 610 to drive the upper connecting member 620 to rise and fall, so that the height of the transfer finger 630 is raised and lowered to between the wafer and the bearing surface of the base 300 before the process;

[0143] S122. Control the robot drive assembly 610 to drive the upper connecting member 620 to rotate, so that at least part of the transfer finger 630 rotates to below the pre-process wafer on the partial base, that is, between the upper surface of the partial base and the lower surface of the wafer 700, so as to Fig.10 As shown in the example, the first transfer finger is made to enter between the first base and the wafer 700, and the second transfer finger is made to enter between the second base and the wafer 700; and the robot driving component 610 is controlled to drive the upper connecting member 620 to rise, so as to drive the wafer 700 to separate from the supporting column 340 and the transfer finger 630 to carry the wafer 700. Specifically, the lower surface of the transfer finger 630 needs to be higher than the top of the supporting column 340, so that the transfer finger 630 takes off the pre-process wafer on part of the base;

[0144] S123. Control the manipulator drive assembly 610 to drive the upper connecting member 620 to rotate, Fig.10 Taking the example shown, it is necessary to rotate the upper connecting member 620 by 180° so that the pre-process wafer carried by the transfer finger 630 is rotated to be located above other bases, that is, the first transfer finger and the second transfer finger are respectively located above the third base and the fourth base, and accordingly, the wafer 700 originally located above the first base and the second base is located above the third base and the fourth base, and the robot drive assembly 610 is controlled to drive the upper connecting member 620 to descend, so that the transfer finger 630 places the pre-process wafer on other bases, namely, the third base and the fourth base;

[0145] S124. Control the manipulator drive assembly 610 to drive the upper connecting member 620 to rotate in the opposite direction, so that the transmission finger 630 is located above the area between adjacent bases 300; that is, the second transmission finger is located between the third base and the fourth base, and the first transmission finger is located above the area between the second base and the third base.

[0146] S52. Controlling the transfer robot 600 to transfer the processed wafers on other bases to some bases includes:

[0147] The state before this step starts is based on the robot position at the end of S124:

[0148] S521. Control the robot drive assembly 610 to drive the upper connecting member 620 to rise and fall, so that the height of the transmission finger 630 is raised and lowered to between the wafer and the bearing surface of the base 300 before the process;

[0149] S522. Control the robot drive assembly 610 to drive the upper connection member 620 to rotate, so that at least part of the transfer fingers 630 rotate to below the upper pre-process wafer, that is, the first transfer finger enters between the first base and the wafer 700, and the second transfer finger enters between the fourth base and the wafer 700, and the robot drive assembly 610 drives the upper connection member 620 to rise, so that the wafer 700 is separated from the support column 340 and the transfer finger 630 carries the wafer 700. Specifically, the lower surface of the transfer finger 630 needs to be higher than the top of the support column 340, so that the transfer finger 630 takes off the pre-process wafer on other bases;

[0150] S523. Control the manipulator drive assembly 610 to drive the upper connecting member 620 to rotate, Fig.10For example, the upper connecting member 620 is rotated 180°; the pre-process wafer carried by the transfer finger 630 is rotated to be located above the partial base, that is, the first transfer finger is located above the first base, and the second transfer finger is located above the second base, and the robot drive component 610 is controlled to drive the upper connecting member 620 to descend, so that the transfer finger 630 places the pre-process wafer on the partial bases, namely, the first base and the second base;

[0151] S524 . Control the robot drive assembly 610 to drive the upper connecting member 620 to rotate in the opposite direction, so that the transmission finger 630 is located above the area between adjacent bases 300 .

[0152] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

[0153] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprises" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprises a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0154] In the above embodiments, the descriptions of directions such as “upper” and “lower” are all based on the drawings.

[0155] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention.

[0156] Thus, the present invention will not be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A semiconductor process chamber, characterized in that: include: A reaction chamber (100); A transmission chamber (200), located below the reaction chamber (100), and connected to the reaction chamber (100) via a bottom opening (110) located at the bottom of the reaction chamber (100); Base (300); a driving mechanism (400) which is in driving connection with the base (300) to drive the base (300) to rise and fall; and A telescopic sealing assembly (500) comprises an upper sealing ring (510) and a telescopic sealing member (520), wherein the upper sealing ring (510) is configured to abut against the bottom opening (110) under the action of an upward lifting force applied by the driving mechanism (400) to seal the bottom opening (110); the top end of the telescopic sealing member (520) is sealedly connected to the bottom surface of the upper sealing ring (510), and the bottom end of the telescopic sealing member (520) is sealedly connected to the bottom wall of the transmission chamber (200).

2. The semiconductor process chamber according to claim 1, characterized in that: The base (300) comprises: A seat body (310) for supporting the wafer; and A lifting rod portion (320) is fixedly connected to the seat body (310) and is connected to the power output end of the driving mechanism (400); a transmission block (330) is fixedly connected to the lifting rod portion (320), and the transmission block (330) is provided with a circumferential outer flange (331) for abutting upward against the upper sealing ring (510).

3. The semiconductor process chamber according to claim 2, characterized in that: The circumferential outer flange (331) is composed of multiple sections, and the multiple sections of the circumferential outer flange (331) are located at the same axial position of the transmission block (330); the upper sealing ring (510) has multiple sections of circumferential inner flanges (512), and the multiple sections of the circumferential inner flanges (512) are located at the same axial position of the upper sealing ring (510), and the space between adjacent circumferential outer flanges (331) can allow the circumferential inner flanges (512) to pass through axially. , and the space between adjacent circumferential inner flanges (512) can allow the circumferential outer flange (331) to pass through axially; the circumferential inner flange (512) and the circumferential outer flange (331) are configured as follows: during the assembly process, after the circumferential inner flange (512) and the circumferential outer flange (331) pass through each other, the circumferential outer flange (331) can be rotated to the same circumferential position as the circumferential inner flange (512).

4. The semiconductor process chamber according to claim 3, characterized in that: The upper surface of the circumferential inner flange (512) of the upper sealing ring (510) is provided with a stepped hole (513) whose radius gradually increases from bottom to top.

5. The semiconductor process chamber according to claim 2, wherein: The lifting rod portion (320) is provided with an axial positioning flange (321), and the transmission block (330) is provided with an axial positioning groove (332), and the axial positioning groove (332) cooperates with the axial positioning flange (321).

6. The semiconductor process chamber according to claim 2, wherein: The transmission block (330) comprises at least two sub-blocks (333) that are fixedly connected, and the joint surfaces of adjacent sub-blocks (333) are parallel to or coplanar with the axis of the lifting rod part (320).

7. The semiconductor process chamber according to any one of claims 1 to 6, characterized in that: The upper sealing ring (510) comprises: A flange portion (515), the flange portion (515) is located at the bottom of the side wall of the upper sealing ring (510) and extends radially outward, and a raised sealing structure (43) is provided on the upper end surface of the flange portion (515); the top wall of the transmission cavity (200) is provided with a receiving space (210) to receive the flange portion (515), the radius of the receiving space (210) is greater than the radius of the bottom opening (110) and is adjacent to the bottom opening (110), and the raised sealing structure (43) is sealed and connected to the top wall of the receiving space (210).

8. A semiconductor process equipment, characterized in that: The semiconductor process equipment comprises a semiconductor process chamber according to any one of claims 1 to 7, wherein the semiconductor process chamber comprises a plurality of reaction chambers (100), and the bases (300) correspond one to one with the reaction chambers (100); a transfer robot (600) is arranged in the transfer chamber (200) for transferring wafers between the bases (300) corresponding to different reaction chambers (100).

9. A semiconductor process method, characterized in that: Applied to the semiconductor process equipment according to claim 8, the semiconductor process method comprises: placing a pre-process wafer on the base (300); controlling the driving mechanism (400) to drive the base (300) to rise and enter the reaction chamber (100), and controlling the driving mechanism (400) to drive the upper sealing ring (510) to rise and seal the bottom opening (110); Conduct semiconductor processing; Controlling the driving mechanism (400) to drive the base (300) and the upper sealing ring (510) to descend into the transmission chamber (200); The processed wafer on the base (300) is removed.

10. The semiconductor process method according to claim 9, characterized in that: Placing a pre-processed wafer on the base (300) comprises: Placing a pre-processed wafer on a partial base, wherein the partial base is a base (300) in the transmission cavity (200) corresponding to a transmission port of the transmission cavity (200); Controlling the transfer robot (600) to transfer the pre-processed wafers on some of the bases to other bases (300); placing the pre-processed wafer on the partial base again; The method of removing the processed wafer from the base comprises: removing the processed wafer from the partial base; Controlling the transfer robot (600) to transfer the processed wafers on the other bases (300) to the partial bases (300); The processed wafer on the partial base (300) is removed again.

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