Anti-reverse power supply circuit architecture
By using a combination of a reverse connection logic control module, a switch drive module and a power switch control module in the thermal management controller, and using a combination of transistors and field effect transistors to achieve an anti-reverse connection design, the problem of anti-reverse connection in the thermal management controller in the existing technology is solved. The problem of high cost and poor reliability of the power supply circuit architecture is reversed, and a high robustness and low-cost power protection effect is achieved.
Patent Information
- Application Number
- CN202411498676.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-25
- Publication Date
- 2025-01-21
AI Technical Summary
The existing thermal management controller anti-reverse power circuit has high cost and poor reliability, and there is a risk of single point failure.
Using a combination of reverse connection logic control module, switch drive module and power switch control module, anti-reverse connection design is realized through the combination of transistors and field effect transistors, simplifying the circuit structure and reducing costs.
Achieving the follow -up circuit effectively when the power supply is reversed, the robustness of the system is improved, and the cost and design complexity of the circuit is reduced.
Smart Images
Figure CN119340948A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of anti-reverse power supply circuits for thermal management controllers, and more specifically, to an anti-reverse power supply circuit architecture that can be used for thermal management controllers. Background Art
[0002] In the new vehicle architecture, the thermal management controller plays a vital role. Its main responsibility is to accurately control the temperature of key components such as the vehicle motor and battery pack. The thermal management controller integrates multiple functional modules, especially the brushless motor drive module and the stepper motor drive module.
[0003] Among them, the output current of the brushless motor drive module is relatively large, and the pre-driver chip combined with the power MOSFET solution is generally used to ensure efficient and stable operation. At the same time, the design of the thermal management controller also needs to pay special attention to the anti-reverse protection of the power MOSFET front-stage input power supply to enhance the overall safety and reliability of the system.
[0004] Figure 1 The schematic diagram of a typical thermal management controller anti-reverse power circuit architecture is disclosed, such as Figure 1 In the illustrated architecture, the MOS field effect transistor 110 is used as the main switch element of the power reverse protection power supply, and the charge pump dedicated chip 120 is responsible for driving and controlling the switch of the MOS field effect transistor 110. Figure 1 In the figure, KL30 represents the 12V power supply of the whole vehicle, and KL30_ANTI is the stable 12V power supply output after anti-reverse measures.
[0005] However, the above existing designs have the following shortcomings:
[0006] 1) High cost: The use of dedicated charge pump chips significantly increases the manufacturing cost of the system, posing a challenge to cost control.
[0007] 2) Poor robustness: The reliance on a dedicated charge pump chip exposes the system to the risk of single-point failure. Once the chip fails, the anti-reverse output function will be lost, which may adversely affect the normal operation of the subsequent load. Summary of the invention
[0008] The purpose of the present invention is to provide an anti-reverse power supply circuit architecture to solve the problems of high cost and poor reliability of the anti-reverse power supply circuit architecture of the thermal management controller in the prior art.
[0009] In order to achieve the above object, the present invention provides an anti-reverse power supply circuit architecture, including a reverse connection logic control module, a switch driving module and a power switch control module:
[0010] The power switch control module has an input end connected to the working power supply and an output end as a power supply interface, and controls the on-off between the working power supply and the power supply interface through a switch;
[0011] The switch driving module has one end connected to the driving power supply and the other end connected to the power switch control module, and applies a voltage signal to the power switch control module to realize switch control of the power switch control module;
[0012] The reverse connection logic control module is connected to the power switch control module and the switch driving module respectively, and is used to disconnect the power switch control module when the power supply is reversely connected.
[0013] In some embodiments, the reverse connection logic control module includes a triode, and the power switch control module includes a field effect transistor:
[0014] The triode is connected to the field effect tube, and when the power supply is connected forwardly or reversely, the on / off of the field effect tube is controlled by increasing or decreasing the voltage.
[0015] In some embodiments, the reverse connection logic control module further includes a first resistor, a second resistor and a first diode:
[0016] The first resistor has one end connected to the base of the transistor and the cathode of the first diode, and the other end connected to the working power supply and the emitter of the transistor;
[0017] The second resistor has one end connected to the ground and the other end connected to the anode of the first diode;
[0018] The cathode of the first diode is connected to the base of the transistor.
[0019] In some embodiments, the collector of the transistor is connected to the gate of the field effect transistor of the power switch control module through the first connection point;
[0020] The field effect tube of the power switch control module has a source connected to the working power supply and a drain as an output terminal.
[0021] In some embodiments, the switch driving module includes a plurality of diodes and a third resistor:
[0022] The anodes of the plurality of diodes are respectively connected to corresponding driving power supplies;
[0023] The cathodes of the plurality of diodes are respectively connected to the second connection points;
[0024] One end of the third resistor is connected to the second connection point, and the other end is connected to the gate of the field effect transistor of the power switch control module.
[0025] In some embodiments, the driving power supply is a brushless DC motor driving chip charge pump.
[0026] In some embodiments, the power switch control module includes a first MOS field effect transistor, a second MOS field effect transistor, a fifth resistor, and a sixth resistor;
[0027] The first MOS field effect transistor has a gate connected to the first connection point via a sixth resistor, a source connected to a working power supply, and a drain serving as an output terminal;
[0028] The second MOS field effect transistor has a gate connected to the first connection point via a fifth resistor, a source connected to a working power supply, and a drain serving as an output terminal.
[0029] In some embodiments, when the power supply is positively connected, the working power supply supplies power to the subsequent circuit through the body diode of the field effect transistor of the power switch control module;
[0030] The driving power supply outputs a driving voltage to the switch driving module, which is used to drive the field effect transistor of the power switch control module to be turned on, so that the power supply end of the power switch control module is normally powered.
[0031] In some embodiments, when the power supply is reversed, the transistor of the reverse logic control module is turned on to pull the gate and source voltages of the field effect transistor of the power switch control module down to 0; the field effect transistor of the power switch control module is turned off, and the power supply end stops supplying power.
[0032] In some embodiments, the anti-reverse power supply circuit architecture further includes a voltage clamping protection module:
[0033] The voltage clamping protection module is connected to the switch driving module and is used to clamp the potential difference of the switch driving module within a safe range when the power supply is reversely connected.
[0034] In some embodiments, the anti-reverse power supply circuit architecture further includes a voltage clamping protection module:
[0035] The voltage clamping protection module comprises a fourth diode;
[0036] The fourth diode has an anode connected to the ground and a cathode connected to the second connection point of the switch driving module.
[0037] In some embodiments, the anti-reverse power supply circuit architecture further includes a voltage stabilization protection module:
[0038] The voltage stabilizing protection module is connected to the working power supply and the power switch control module respectively, and performs voltage stabilizing protection on the voltage signal of the power switch control module.
[0039] In some embodiments, the anti-reverse power supply circuit architecture further includes a voltage stabilization protection module:
[0040] The voltage stabilizing protection module includes a fifth diode:
[0041] The fifth diode has a positive terminal connected to the working power supply and the source of the field effect tube of the power switch control module, and a negative terminal connected to the gate of the field effect tube of the power switch control module through a first connection point.
[0042] In some embodiments, the anti-reverse power supply circuit architecture further includes a voltage stabilization protection module:
[0043] The voltage stabilization protection module includes a fourth resistor and a first capacitor:
[0044] The fourth resistor has one end connected to the working power supply and the source of the field effect transistor of the power switch control module, and the other end connected to the gate of the field effect transistor of the power switch control module through the first connection point;
[0045] The first capacitor has one end connected to the working power supply and the source of the field effect transistor of the power switch control module, and the other end connected to the gate of the field effect transistor of the power switch control module through a first connection point.
[0046] The anti-reverse power supply circuit architecture provided by the present invention can not only realize normal power supply, but also effectively protect subsequent circuits when the power supply is reversely connected, and simplifies the circuit and reduces the cost to a minimum while ensuring robustness. BRIEF DESCRIPTION OF THE DRAWINGS
[0047] The above and other features, properties and advantages of the present invention will become more apparent through the following description in conjunction with the accompanying drawings and embodiments, in which the same reference numerals always represent the same features, wherein:
[0048] Figure 1 The principle block diagram of a typical thermal management controller anti-reverse power circuit architecture is revealed;
[0049] Figure 2 A principle block diagram of a thermal management controller anti-reverse power supply circuit architecture according to an embodiment of the present invention is disclosed;
[0050] Figure 3 A circuit schematic diagram of an anti-reverse power supply circuit architecture according to an embodiment of the present invention is disclosed;
[0051] Figure 4 A circuit schematic diagram of a reverse connection logic control module according to an embodiment of the present invention is disclosed;
[0052] Figure 5 A circuit schematic diagram of a switch driving module according to an embodiment of the present invention is disclosed;
[0053] Figure 6 A circuit schematic diagram of a voltage clamping protection module according to an embodiment of the present invention is disclosed;
[0054] Figure 7 A circuit schematic diagram of a voltage stabilizing protection module according to an embodiment of the present invention is disclosed;
[0055] Figure 8 A circuit schematic diagram of a power switch control module according to an embodiment of the present invention is disclosed.
[0056] The meanings of the reference numerals in the figures are as follows:
[0057] 110MOS field effect transistor;
[0058] 120 charge pump dedicated chip;
[0059] 210 reverse connection logic control module;
[0060] 220 switch drive module;
[0061] 230 voltage clamp protection module;
[0062] 240 voltage stabilizing protection module;
[0063] 250 power switch control module;
[0064] 261 a first charge pump;
[0065] 262 second charge pump. DETAILED DESCRIPTION
[0066] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the invention and are not used to limit the invention.
[0067] The present invention relates to a low-cost and highly reliable anti-reverse power supply circuit architecture, which can be applied to a thermal management controller and can also be applied to other fields.
[0068] The anti-reverse power supply circuit architecture proposed in the present invention realizes the anti-reverse connection, filtering and drive control functions through a reasonable combination of components (MOSFET, triode, clamping diode, etc.), simplifies the circuit and reduces the cost to a minimum while ensuring robustness.
[0069] Figure 2 The principle block diagram of the anti-reverse power supply circuit architecture according to an embodiment of the present invention is disclosed. Figure 2As shown, the anti-reverse power supply circuit architecture proposed by the present invention at least includes a reverse connection logic control module 210, a switch driving module 220 and a power switch control module 250:
[0070] The power switch control module 250 has an input end connected to the working power supply and an output end as a power supply interface, and controls the on-off between the working power supply and the power supply interface through a switch;
[0071] The switch driving module 220 has one end connected to the driving power supply and the other end connected to the power switch control module 250, and applies a voltage signal to the power switch control module 250 to realize the switch control of the power switch control module 250;
[0072] The reverse connection logic control module 210 is connected to the power switch control module 250 and the switch driving module 220 respectively, and is used to disconnect the power switch control module 250 when the power supply is reversely connected.
[0073] In this embodiment, the working power supply KL30 is a 12V power supply for the whole vehicle, and the power supply interface KL30_ANTI is a stable 12V power supply output after anti-reverse measures are taken.
[0074] In this embodiment, the driving power source includes a first charge pump 261 and a second charge pump 262 , which are respectively connected to the switch driving module 220 .
[0075] Figure 3 A circuit schematic diagram of an anti-reverse power supply circuit architecture according to an embodiment of the present invention is disclosed. Figure 3 In the embodiment shown, the present invention proposes an anti-reverse power supply circuit architecture, which at least includes a reverse connection logic control module 210, a switch driving module 220, a voltage clamping protection module 230, a voltage stabilizing protection module 240 and a power switch control module 250:
[0076] In this embodiment, the reverse connection logic control module 210 includes a transistor T11;
[0077] The power switch control module 250 includes a field effect transistor:
[0078] The triode is connected to the field effect tube, and when the power supply is connected forwardly or reversely, the on / off of the field effect tube is controlled by increasing or decreasing the voltage.
[0079] The present invention realizes the anti-reverse design by combining a triode with a field effect tube, has a simple and effective circuit structure, avoids the use of a complex reverse connection protection circuit, and saves component costs and design time.
[0080] More specifically, in this embodiment, the driving power source is a BLDC (brushless direct current motor driving chip) charge pump.
[0081] More specifically, the field effect transistor is a MOS field effect transistor (MOSFET, metal-oxide semiconductor field effect transistor). MOSFET is a common and inexpensive switching element. Compared with complex dedicated reverse connection protection IC or circuit, using MOSFET to achieve reverse connection protection can effectively reduce circuit cost.
[0082] When the power supply is positively connected, the switch driving module 220 provides the MOSFET gate voltage through the BLDC charge pump, and the MOSFET is turned on, allowing the working power supply KL30 to supply power to the subsequent circuits normally through the MOSFET.
[0083] When the power supply is reversely connected, the reverse connection logic control module 210 pulls down the gate voltage, and the MOSFET is turned off to prevent the power supply from flowing in reverse, thereby playing a role in preventing reverse connection.
[0084] It is worth noting that the "reverse power connection" situation mentioned in the present invention refers to the situation where the voltage of the working power supply is incorrectly applied to the ground terminal GND, and the voltage input terminal is improperly connected to the ground state, thereby forming an abnormal power supply path, while the "positive power connection" situation is the normal circuit power-on state.
[0085] Figures 4 to 8 for Figure 3 The detailed enlarged view of each module shown in Figure 3 and Figures 4 to 8 , the functional modules of the anti-reverse power supply circuit architecture proposed in the present invention are described in detail.
[0086] Figure 4 The circuit schematic diagram of the reverse connection logic control module according to an embodiment of the present invention is disclosed. Figure 3 and Figure 4 As shown, the reverse connection logic control module 210 includes a transistor T11, a first resistor R1, a second resistor R2 and a first diode D1:
[0087] The first resistor R1 has one end connected to the base of the transistor T11 and the cathode of the first diode D1, and the other end connected to the working power supply KL30 and the emitter of the transistor T11;
[0088] The second resistor R2 has one end connected to the ground and the other end connected to the anode of the first diode D1;
[0089] The cathode of the first diode D1 is connected to the base of the transistor T1.
[0090] Wherein, the first resistor R1 and the second resistor R2 provide a bias voltage to determine the switch state of the transistor T11;
[0091] The collector of the transistor T11 is connected to the gate of the MOS field effect transistor of the power switch control module 250 through the first connection point P1, and is used to control the switch of the MOSFET by lowering or increasing the voltage. In the case of reverse power supply, the gate voltage is lowered to cut off the MOSFET, thereby playing a protective function against reverse connection.
[0092] In this embodiment, the resistance of the first resistor R1 and the second resistor R2 is 10 kΩ.
[0093] Figure 5 A circuit diagram of a switch driving module according to an embodiment of the present invention is disclosed. Figure 3 and Figure 5 As shown, the switch driving module 220 mainly functions to transmit the voltage signal of the driving power supply to the gate of the MOSFET of the power switch control module 250, so that the MOSFET is turned on under normal power supply state, ensuring that the working power supply can be output through the power supply end of the MOSFET to supply power to the subsequent circuit.
[0094] The switch driving module 220 includes a plurality of diodes: the anodes of the plurality of diodes are respectively connected to corresponding driving power supplies;
[0095] The cathodes of the plurality of diodes are respectively connected to the second connection point P2.
[0096] In this embodiment, the switch driving module 220 includes a second diode D2, a third diode D3 and a third resistor R3:
[0097] The anode of the second diode D2 is connected to the output voltage VCP of the first charge pump 261;
[0098] The anode of the third diode D3 is connected to the output voltage VCP2 of the second charge pump 262;
[0099] The cathodes of the second diode D2 and the third diode D3 are respectively connected to the second connection point P2;
[0100] One end of the third resistor R3 is connected to the second connection point P2 , and the other end is connected to the gate of the MOSFET of the power switch control module 250 .
[0101] In this embodiment, the resistance of the third resistor R3 is 10 kΩ.
[0102] Figure 6 A circuit schematic diagram of a voltage clamping protection module according to an embodiment of the present invention is disclosed. Figure 3 and Figure 6As shown, the voltage clamping protection module 230 is connected to the switch driving module 220 and is used to clamp the potential difference of the switch driving module 220 within a safe range (about 0.3V) when the power supply is reversed, thereby protecting the safety of the subsequent BLDC charge pump.
[0103] In this embodiment, the voltage clamping protection module 230 is composed of a fourth diode D4:
[0104] The fourth diode D4 has an anode connected to the ground and a cathode connected to the second connection point P2 of the switch driving module 220 .
[0105] The voltage clamping protection module 230 clamps the voltage of the second connection point P2 within a specified range through a clamping diode to prevent excessive voltage from damaging the subsequent circuit. This simple level clamping design avoids more complex voltage regulation circuits, thereby improving the robustness of the system and saving component costs.
[0106] Figure 7 The circuit schematic diagram of the voltage stabilizing protection module according to an embodiment of the present invention is disclosed. Figure 3 and Figure 7 As shown, the voltage stabilizing protection module 240 is connected to the working power supply KL30 and the power switch control module 250 respectively, and performs voltage stabilizing protection on the voltage signal of the power switch control module 250 .
[0107] In this embodiment, the voltage stabilizing protection module 240 includes a fifth diode D5:
[0108] The fifth diode D5 has a positive end connected to the working power supply KL30 and the source of the MOSFET of the power switch control module 250, and a negative end connected to the gate of the MOSFET of the power switch control module 250 through the first connection point P1, providing voltage clamping protection to prevent the gate of the MOSFET from being affected by transient overvoltage and to prevent excessive voltage from damaging the MOSFET of the power switch control module 250.
[0109] In this embodiment, the voltage stabilization protection module 240 is composed of filtering and current limiting elements such as resistors and capacitors, and is connected between the gate and source of the MOSFET of the power switch control module 250 to filter out noise and stabilize the gate voltage signal of the MOSFET, ensuring that the MOSFET will not be disturbed by external noise during the conduction and cutoff process, thereby ensuring the stable operation of the MOSFET.
[0110] In this embodiment, the voltage stabilization protection module 240 further includes a fourth resistor R4 and a first capacitor C1:
[0111] The fourth resistor R4 has one end connected to the working power supply KL30 and the source of the MOSFET of the power switch control module 250, and the other end connected to the gate of the MOSFET of the power switch control module 250 through the first connection point P1;
[0112] The first capacitor C1 has one end connected to KL30 and the MOSFET source of the power switch control module 250 , and the other end connected to the gate of the MOSFET of the power switch control module 250 through a first connection point P1 .
[0113] The fourth resistor R4 and the first capacitor C1 form an RC filter circuit. When the MOSFET of the power switch control module 250 is turned on, the RC filter circuit of the voltage stabilization protection module 240 prevents high-frequency noise from interfering with the gate voltage signal and prevents the MOSFET from malfunctioning due to noise during operation.
[0114] The fourth resistor R4 is used for current limiting to prevent gate overcurrent; the first capacitor C1 is used for filtering to eliminate high-frequency noise in the power supply, ensure the stability of the gate voltage of the MOSFET, and prevent mis-conduction.
[0115] In this embodiment, the resistance of the fourth resistor R4 is 100 kΩ, and the capacitance of the first capacitor C1 is 10 nF.
[0116] In this embodiment, the overall function of the voltage stabilization protection module 240 is to protect the gate of the MOSFET from transient overvoltage and stabilize the signal by filtering. This design enhances the robustness of the circuit and maintains the advantage of low cost through simple component combination.
[0117] It should be noted that, in the present embodiment, two diodes connected in parallel in the same direction are encapsulated inside the first diode D1 to the fifth diode D5.
[0118] The same-direction parallel diodes connect the positive poles of the two diodes together and the negative poles together. It is a circuit connection method commonly used in circuits to limit signal levels, voltage regulation, power switches and other applications. It has the characteristics of high stability and reliability, current limiting capability, and fast response speed.
[0119] Figure 8 A circuit schematic diagram of a power switch control module according to an embodiment of the present invention is disclosed. Figure 3 and Figure 8 As shown, the power switch control module 250 has an input end connected to the working power supply KL30 and an output end connected to the power supply interface KL30_ANTI. The switch controls the on / off between the working power supply KL30 and the power supply interface KL30_ANTI, and is responsible for normal power supply and reverse connection protection.
[0120] More specifically, the power switch control module 250 includes at least one MOS field effect transistor (MOSFET), a source of which is an input terminal connected to the working power supply KL30, and a drain of which is an output terminal.
[0121] In this embodiment, the power switch control module 250 includes at least two MOS field effect transistors connected in parallel, which are denoted as a first MOS field effect transistor T21 and a second MOS field effect transistor T22;
[0122] The first MOS field effect transistor T21 has a gate connected to the first connection point P1 through a sixth resistor R6, a source connected to the working power supply KL30, and a drain as an output terminal outputting a normal power supply voltage KL30_ANTI;
[0123] The second MOS field effect transistor T22 has a gate connected to the first connection point P1 through a fifth resistor R5, a source connected to the working power supply KL30, and a drain serving as an output terminal to output a normal power supply voltage KL30_ANTI.
[0124] In this embodiment, the resistance of the fifth resistor R5 and the sixth resistor R6 is 10 kΩ.
[0125] The specific working mechanism of the anti-reverse power supply circuit architecture proposed by the present invention is described below.
[0126] Under normal circumstances, the circuit relies on the KL30 power supply to provide the system with initial power through the body diode, and then the MOSFET is turned on and powered normally. When powered on, the working power supply KL30 is the main power input.
[0127] More specifically, when the power supply is positively connected, after normal power-on startup, the working power supply KL30 supplies power to the subsequent circuit, i.e., the thermal management controller, through the body diode of the power MOSFET of the power switch control module 250, which provides a preliminary current path. Before the MOSFET is turned on, the working power supply provides a basic voltage for the system through the body diode. The body diode is a function of the MOSFET itself. Using the body diode to initially power the system avoids the use of additional diodes or complex power management solutions, further reducing costs.
[0128] After the MCU (microcontroller unit) and BLDC driver chip inside the thermal management controller are initialized, the BLDC charge pump inside the thermal management controller will output a 25V driving voltage to the switch driver module 220 to drive the MOSFET of the power switch control module 250 to turn on.
[0129] At this point, the power supply officially supplies power to the subsequent circuit through the power supply end of the MOSFET, completing the normal working state of the circuit.
[0130] In the case of reverse connection, the reverse connection logic control module 210 and the voltage clamping protection module 230 ensure the circuit's anti-reverse connection function, lower the gate-source voltage and the clamping voltage to ensure that the MOSFET is turned off, and protect the subsequent circuit from the influence of reverse current.
[0131] More specifically, when the power supply is reversed, the GND level of the reverse logic control module 210 becomes 14V, and the voltage input terminal of KL30 becomes 0V, which means that the power supply polarity is inverted.
[0132] At this time, the transistor of the reverse logic control module 210 is turned on, and the gate and source levels of the MOSFET in the power switch control module 250 are pulled to 0V.
[0133] Since the gate-source voltage is 0, the MOSFET will be turned off and the power supply end will stop supplying power, thus preventing the reverse connection of the power supply from damaging the circuit.
[0134] The voltage clamping protection module 230 plays a role of level clamping at this time, ensuring that the level of the second connection point P2 is clamped to 13.7V (14V-0.3V), thereby ensuring that the voltage difference between the BLDC charge pump and the second connection point P2 is maintained at 0.3V, protecting the safety of the subsequent BLDC charge pump drive circuit.
[0135] The anti-reverse power supply circuit architecture proposed in the present invention combines the anti-reverse connection design of the transistor and the MOSFET to form a highly robust circuit structure, which can not only supply power normally, but also effectively protect subsequent circuits when the power supply is reversed, thereby achieving the purpose of low-cost and highly robust thermal management control and anti-reverse connection protection.
[0136] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.
[0137] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "plurality" means two or more, unless otherwise clearly specified.
[0138] Those skilled in the art will appreciate that information, signals, and data may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips cited throughout the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, optical fields or optical particles, or any combination thereof.
[0139] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or a combination of the two. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps are generally described above in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. The technician may implement the described functionality in different ways for each specific application, but such implementation decisions should not be interpreted as resulting in a departure from the scope of the present invention.
[0140] The various illustrative logic modules and circuits described in conjunction with the embodiments disclosed herein may be implemented or executed with a general purpose processor, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. A general purpose processor may be a microprocessor, but in the alternative, the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in cooperation with a DSP core, or any other such configuration.
[0141] The above embodiments are provided for persons familiar with the art to implement or use the present invention. Personnel familiar with the art can make various modifications or changes to the above embodiments without departing from the inventive concept of the present invention. Therefore, the protection scope of the present invention is not limited to the above embodiments, but should be the maximum scope of the innovative features mentioned in the claims.
Claims
1. An anti-reverse power supply circuit architecture, characterized in that: Including reverse logic control module, switch drive module and power switch control module: The power switch control module has an input end connected to the working power supply and an output end as a power supply interface, and controls the on-off between the working power supply and the power supply interface through a switch; The switch driving module has one end connected to the driving power supply and the other end connected to the power switch control module, and applies a voltage signal to the power switch control module to realize switch control of the power switch control module; The reverse connection logic control module is connected to the power switch control module and the switch driving module respectively, and is used to disconnect the power switch control module when the power supply is reversely connected.
2. The anti-reverse power supply circuit architecture according to claim 1, characterized in that: The reverse connection logic control module includes a triode, and the power switch control module includes a field effect transistor: The triode is connected to the field effect tube, and when the power supply is connected forwardly or reversely, the on / off of the field effect tube is controlled by increasing or decreasing the voltage.
3. The anti-reverse power supply circuit architecture according to claim 2, characterized in that: The reverse connection logic control module further includes a first resistor, a second resistor and a first diode: The first resistor has one end connected to the base of the transistor and the cathode of the first diode, and the other end connected to the working power supply and the emitter of the transistor; The second resistor has one end connected to the ground and the other end connected to the anode of the first diode; The cathode of the first diode is connected to the base of the transistor.
4. The anti-reverse power supply circuit architecture according to claim 2, characterized in that: The collector of the triode is connected to the gate of the field effect transistor of the power switch control module through the first connection point; The field effect tube of the power switch control module has a source connected to the working power supply and a drain as an output terminal.
5. The anti-reverse power supply circuit architecture according to claim 4, characterized in that: The switch driving module includes a plurality of diodes and a third resistor: The anodes of the plurality of diodes are respectively connected to corresponding driving power supplies; The cathodes of the plurality of diodes are respectively connected to the second connection points; One end of the third resistor is connected to the second connection point, and the other end is connected to the gate of the field effect transistor of the power switch control module.
6. The anti-reverse power supply circuit architecture according to claim 5, characterized in that: The driving power supply is a brushless DC motor driving chip charge pump.
7. The anti-reverse power supply circuit architecture according to claim 4, characterized in that: The power switch control module includes a first MOS field effect transistor, a second MOS field effect transistor, a fifth resistor and a sixth resistor: The first MOS field effect transistor has a gate connected to the first connection point via a sixth resistor, a source connected to a working power supply, and a drain serving as an output terminal; The second MOS field effect transistor has a gate connected to the first connection point via a fifth resistor, a source connected to a working power supply, and a drain serving as an output terminal.
8. The anti-reverse power supply circuit architecture according to claim 4, characterized in that: When the power supply is positively connected, the working power supply supplies power to the subsequent circuit through the body diode of the field effect tube of the power switch control module; The driving power supply outputs a driving voltage to the switch driving module, which is used to drive the field effect transistor of the power switch control module to be turned on, so that the power supply end of the power switch control module is normally powered.
9. The anti-reverse power supply circuit architecture according to claim 4, characterized in that: When the power supply is reversed, the transistor of the reverse logic control module is turned on, pulling the gate and source voltages of the field effect tube of the power switch control module down to 0; the field effect tube of the power switch control module is turned off, and the power supply end stops supplying power.
10. The anti-reverse power supply circuit architecture according to claim 1, characterized in that: Also includes voltage clamp protection module: The voltage clamping protection module is connected to the switch driving module and is used to clamp the potential difference of the switch driving module within a safe range when the power supply is reversely connected.
11. The anti-reverse power supply circuit architecture according to claim 5, characterized in that: Also includes voltage clamp protection module: The voltage clamping protection module comprises a fourth diode; The fourth diode has an anode connected to the ground and a cathode connected to the second connection point of the switch driving module.
12. The anti-reverse power supply circuit architecture according to claim 1, characterized in that: Also includes voltage stabilization protection module: The voltage stabilizing protection module is connected to the working power supply and the power switch control module respectively, and performs voltage stabilizing protection on the voltage signal of the power switch control module.
13. The anti-reverse power supply circuit architecture according to claim 4, characterized in that: Also includes voltage stabilization protection module: The voltage stabilizing protection module includes a fifth diode: The fifth diode has a positive terminal connected to the working power supply and the source of the field effect tube of the power switch control module, and a negative terminal connected to the gate of the field effect tube of the power switch control module through a first connection point.
14. The anti-reverse power supply circuit architecture according to claim 4, characterized in that: Also includes voltage stabilization protection module: The voltage stabilization protection module includes a fourth resistor and a first capacitor: The fourth resistor has one end connected to the working power supply and the source of the field effect transistor of the power switch control module, and the other end connected to the gate of the field effect transistor of the power switch control module through the first connection point; The first capacitor has one end connected to the working power supply and the source of the field effect transistor of the power switch control module, and the other end connected to the gate of the field effect transistor of the power switch control module through a first connection point.