A light-heat camouflage device and a manufacturing method thereof

Abstract

The present application relates to a kind of photothermal camouflage device and its manufacturing method.The photothermal camouflage device includes semiconductor refrigeration substrate, RGB-LED is arranged in semiconductor refrigeration substrate, the semiconductor refrigeration substrate also includes lower substrate, upper substrate, electrode and semiconductor particle, lower substrate and upper substrate are oppositely arranged, lower substrate and upper substrate are all provided with the electrode, semiconductor particle includes P-type semiconductor particle and N-type semiconductor particle, P-type semiconductor particle and N-type semiconductor particle are alternately arranged between lower substrate, upper substrate and with the electrode form loop, when working, external voltage is applied to the loop, the direction and size of current are adjusted to realize the cooling and heating of device to change the infrared spectral image of device.The present application utilizes the advantages of semiconductor refrigeration technology, such as no refrigerant, no vibration and no noise during operation and easy operation, integrates semiconductor refrigeration substrate with RGB-LED, and manufactures photothermal camouflage device with independently adjustable visible light and infrared light pattern.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photothermal camouflage, in particular to a photothermal camouflage device and a manufacturing method thereof. BACKGROUND

[0002] Photothermal camouflage is a technology that uses specific materials and system design to simulate or mask the photothermal characteristics of a target to achieve the effect of invisibility. With the development of technology, modern detection technology has covered a wider spectral range, including visible light, infrared and other spectral regions. This means that in order to cope with the increasingly complex detection environment, the camouflage system needs to have more perfect wide-spectrum control capability, which can simulate or mask the photothermal characteristics of the target in multiple spectral regions.

[0003] Light-emitting diodes (LEDs) are widely used in lighting, display and other fields due to their high efficiency, long life, ease of driving and programmable advantages. Due to the unique advantages of LEDs and high-quality display effects, they have been applied to the field of visible light camouflage and have achieved good results. However, the infrared pattern of LED-based camouflage cannot be changed under the same visible light pattern, greatly reducing its feasibility in infrared field camouflage. Therefore, further research on visible-infrared wide-spectrum active camouflage devices based on LEDs has great application prospects.

[0004] Liu Dongqing et al. disclosed in Chinese patent CN 110763084 A "visible light and thermal infrared compatible adaptive camouflage device and display module", the display module is a multi-layer stacked planar structure, the outer layer to the inner layer includes: multi-layer ITO transparent film with different emissivity, polarizing film, diffusion film, light guide plate, reflective film, aluminum substrate, and circuit board, and the circuit board is also provided with a semiconductor thermoelectric refrigeration piece. This scheme realizes visible light camouflage through LED light emission, but it uses an independent semiconductor thermoelectric piece and embeds it in the circuit board, which has low integration. SUMMARY

[0005] In order to at least solve one of the problems existing in the prior art, the present application provides a photothermal camouflage device, which uses semiconductor refrigeration technology to regulate and control the temperature of the LED photothermal camouflage device, thereby realizing the camouflage of the infrared pattern of the device. The visible light pattern and the infrared pattern of the photothermal camouflage device can be independently regulated (the regulation of the infrared pattern is realized by the semiconductor refrigeration substrate, and the regulation of the visible light pattern is realized by the RGB-LED chip), and the camouflage in a wide spectral range is realized.

[0006] In order to achieve the object of the present application, the present application provides a light-heat camouflage device, comprising a semiconductor refrigeration substrate capable of emitting light, wherein the semiconductor refrigeration substrate is provided with an RGB-LED, and further comprises a lower substrate, an upper substrate, electrodes and semiconductor particles, the lower substrate and the upper substrate are oppositely arranged, the lower substrate and the upper substrate are both provided with the electrodes, the semiconductor particles comprise P-type semiconductor particles and N-type semiconductor particles, the P-type semiconductor particles and the N-type semiconductor particles are alternately arranged between the lower substrate and the upper substrate and form a loop with the electrodes, and during operation, an external voltage is applied to the loop, and the cooling and heating of the device are realized by adjusting the direction and size of the current to change the infrared spectral image of the device.

[0007] Further, the semiconductor refrigeration substrate is located at the bottom of the device.

[0008] Further, the semiconductor refrigeration substrate further comprises an RGB-LED power supply circuit, the RGB-LED power supply circuit is patterned and printed on the lower substrate, and the pins of the RGB-LED are connected with the soldering contact points of the RGB-LED power supply circuit.

[0009] Specifically, the RGB-LED power supply circuit is patterned and printed on the upper surface of the lower substrate at a free position.

[0010] Further, the RGB-LED outputs a visible light image when powered on, and the output of the visible light pattern of the device is changed by changing the power supply mode of the RGB-LED.

[0011] The RGB-LED is mounted on the upper surface of the lower substrate of the semiconductor refrigeration substrate and connected with the RGB-LED power supply circuit. By supplying power to the RGB-LED, the RGB-LED can emit the visible light required by the light-heat camouflage device, and by adjusting the power supply mode of the RGB-LED chip (by adjusting the voltages of the R, G and B components of the LED to adjust the color of the visible light emitted by the LED to change the output of the visible light), the purpose of changing the visible light pattern of the light-heat camouflage device can be achieved.

[0012] Further, a control system is further included, which is connected with the semiconductor refrigeration substrate and used for controlling the voltage input of the semiconductor refrigeration substrate and the RGB-LED.

[0013] The control system can be connected with the loop composed of the semiconductor particles and the electrodes in the semiconductor refrigeration substrate and the RGB-LED power supply circuit. By simultaneously controlling the voltage input of the loop in the semiconductor refrigeration substrate and the voltage input of the RGB-LED through the control system, the independent control of the infrared image output and the visible light image output of the device can be realized.

[0014] The control system comprises a single-chip control chip, a power supply and a power supply driving module, a voltage reduction module and a temperature sensor, and is connected with a loop composed of semiconductor particles and electrodes in the semiconductor refrigeration substrate and an RGB-LED power supply circuit. Based on the temperature feedback of the temperature sensor and the fuzzy PID algorithm, the single-chip control chip can complete the input control of the voltage size and direction of the loop in the semiconductor refrigeration substrate, so as to adjust the device to the corresponding temperature to complete the control requirement of the infrared image output. At the same time, the single-chip control chip can also be used to control the voltage input of the RGB-LED to complete the control of the visible light image output.

[0015] Further, a flexible scattering layer is further included, and the flexible scattering layer is located on the surface of the semiconductor refrigeration substrate. The flexible scattering layer can improve the uniformity of the visible light distribution while not affecting the transmission of the infrared radiation.

[0016] Further, the flexible scattering layer is a flexible film made of a material with high infrared transparency and high visible light scattering ability, which can improve the uniformity of the visible light distribution while not affecting the transmission of the infrared radiation.

[0017] Further, a light-heat conversion layer is further included, and the light-heat conversion layer is covered on the flexible scattering layer and used for converting part of the visible light into infrared radiation to improve the infrared pattern definition of the light-heat camouflage device.

[0018] Further, the light-heat conversion layer is a black colloidal film made of a flexible substrate and a light-absorbing and heat-generating material. The color of the light-heat conversion layer is black, which can make the light-heat camouflage device present black when the RGB-LED has no additional current, thereby making up for the defect that the RGB-LED cannot display black and making the visible light display of the light-heat camouflage device full-color.

[0019] Further, an external heat dissipation component is further included, and the external heat dissipation component is used for dissipating the heat generated by the semiconductor refrigeration substrate during work.

[0020] Further, the heat dissipation component can be arranged under the lower substrate of the semiconductor refrigeration substrate. Due to the thermoelectric effect, the upper surface of the semiconductor refrigeration substrate generates heat while the lower surface generates heat during work. The installation of the heat dissipation component at the bottom can dissipate the excess heat generated at the lower surface of the lower substrate during the work of the device through heat conduction and convection heat exchange, so as to protect the device from the excess heat.

[0021] Preferably, the external heat dissipation component comprises a copper heat pipe, a fin and a heat dissipation fan.

[0022] The present invention also provides a method for manufacturing a photothermal camouflage device, including the steps of manufacturing a semiconductor refrigeration substrate. The manufacturing steps of the semiconductor refrigeration substrate include: patterning electrodes of a preset thickness on the upper surface of the lower substrate and the lower surface of the upper substrate, arranging the P-type semiconductor particles and the N-type semiconductor particles alternately at the overlapping positions of the electrodes on the surfaces of the upper and lower substrates, and connecting each semiconductor particle to the electrodes on the surfaces of the upper and lower substrates to form a loop.

[0023] The invention also includes a method for installing an RGB-LED, comprising the steps of: printing a patterned copper power supply circuit at a vacant position on the upper surface of the lower substrate; and connecting the pins of the RGB-LED to the soldering contacts of the copper power supply circuit by soldering.

[0024] The invention also includes a method for manufacturing a flexible scattering layer, which comprises: placing PMMA particles into a reagent bottle containing DMF, stirring to fully dissolve them to obtain a PMMA solution, then performing ultrasonic treatment, evenly applying the PMMA solution on a clean glass substrate, starting a spin coater for spin coating, performing volatilization treatment to obtain a PMMA flexible scattering film adsorbed on the glass substrate, and performing ultrasonic cleaning to obtain the flexible scattering layer.

[0025] It also includes a method for manufacturing a light-heat conversion layer, which includes: adding a light-absorbing and heat-generating material to a flexible substrate to obtain a light-absorbing and heat-generating colloid, vacuum degassing the obtained light-absorbing and heat-generating colloid, and then injection molding and curing to obtain the light-heat conversion layer.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] (1) The present invention utilizes an integrated semiconductor refrigeration substrate to regulate the temperature of the photothermal camouflage device, thereby reducing the size of the photothermal camouflage device while increasing the modulatable range of its infrared image.

[0028] (2) The introduction of the flexible scattering layer makes the light spot of the RGB-LED display more uniform, giving the photothermal camouflage device a better visible light image output effect.

[0029] (3) The black photothermal conversion layer used on the surface of the photothermal camouflage device not only enhances the clarity of the infrared image, but also makes up for the defect that the RGB-LED chip cannot display black, thus realizing the full colorization of the visible light image.

[0030] (4) The present invention proposes a semiconductor refrigeration substrate with a semiconductor thermoelectric effect. While having the ability to output infrared images of a semiconductor thermoelectric control device, it can also replace a circuit board as a substrate for carrying LEDs and has the ability to output visible light patterns. Compared with existing patent technology documents, the present invention has higher integration and integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is the overall structure schematic diagram of a light-heat camouflage device in the embodiment of the present application.

[0032] Figure 2 is the partial structure schematic diagram of a semiconductor refrigeration substrate in the embodiment of the present application.

[0033] Figure 3 is the working principle diagram of a light-heat camouflage device in the embodiment of the present application, including the principle of semiconductor substrate regulating temperature to control infrared spectrum and the output of visible light pattern.

[0034] Figure 4 is the electronic circuit diagram on the lower substrate and the upper substrate inside the semiconductor refrigeration substrate in the embodiment of the present application, including the electronic circuit schematic diagram of power supply to the semiconductor refrigeration substrate and power supply to the RGB-LED.

[0035] In the figure, 1 is a semiconductor refrigeration substrate, 11 is a lower substrate, 12 is an upper substrate, 13 is an electrode, 14 is a semiconductor particle, including a P-type semiconductor particle 141 and an N-type semiconductor particle 142, 15 is an RGB-LED, 16 is an RGB-LED power supply circuit; 2 is a flexible scattering layer; 3 is a light-heat conversion layer; 4 is an external heat dissipation component; 5 is a control system; 6 is a semiconductor refrigeration substrate power supply circuit on the lower substrate; 7 is a semiconductor refrigeration substrate power supply circuit on the upper substrate; 8 is an RGB-LED welding contact point; 9 is a semiconductor refrigeration substrate power input end; 10 is an RGB-LED power input end. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0037] The present application provides a light-heat camouflage device, as shown in the figure, mainly including a semiconductor refrigeration substrate 1, a flexible scattering layer 2, a light-heat conversion layer 3, an external heat dissipation component 4 and a control system. Figure 1 The semiconductor refrigeration substrate 1 is located at the bottom of the device, and the semiconductor refrigeration substrate 1 is the main body of the light-heat camouflage device, which is used to adjust the temperature of the light-heat camouflage device to modulate its infrared image output.

[0038] The RGB LED is mounted within the semiconductor cooling substrate 1 to output a visible light image. The flexible scattering layer 2 is mounted above the semiconductor cooling substrate 1 to homogenize the visible light spot emitted by the RGB LED. The photothermal conversion layer 3 is mounted above the flexible scattering layer 2 to increase the clarity of the infrared image and render the visible light image full-color. The external heat sink 4 is mounted below the semiconductor cooling substrate 1 of the photothermal camouflage device to eliminate excess heat generated by the semiconductor cooling substrate 1 during operation. The control system 5 is connected to the semiconductor cooling substrate 1 to control the voltage input between the semiconductor cooling substrate 1 and the RGB LED, thereby controlling the visible light and infrared light image output of the photothermal camouflage device.

[0039] In some embodiments of the present invention, the model of the RGB-LED used is 0805.

[0040] In some embodiments of the present invention, the external heat dissipation component 4 includes a copper heat pipe, a fin heat sink and a fan.

[0041] In some embodiments of the present invention, the control system 5 uses STM32F103C8T6 as the main control chip, selects LD1117-5 and LD1117-3.3 as power driver chips and uses a 12V battery to power the device, and selects DS18B20 digital temperature sensor as a negative feedback element.

[0042] like Figure 2 As shown, the semiconductor refrigeration substrate 1 includes a lower substrate 11 , an upper substrate 12 , electrodes 3 , semiconductor particles 14 , RGB-LEDs 5 and RGB-LED power supply circuits 16 .

[0043] like Figure 2 As shown, the electrodes 3 are patterned and printed on the upper surface of the lower substrate 11 and the lower surface of the upper substrate 12. The semiconductor particles 14 include P-type semiconductor particles 141 and N-type semiconductor particles 142. The P-type semiconductor particles and the N-type semiconductor particles are alternately arranged at the positions where the electrodes 3 on the surfaces of the upper substrate 12 and the lower substrate 11 overlap. Each semiconductor particle is connected to the electrodes on the upper and lower substrates through soldering to form an energized circuit, thereby connecting the upper and lower substrates.

[0044] In some embodiments of the present invention, lower substrate 11 is made of ceramic. In other embodiments, it can be substituted with other insulating materials with high thermal conductivity. Upper substrate 12 can be made of insulating ceramic with high thermal conductivity, and holes can be opened at locations corresponding to the LEDs to avoid affecting the device's visible light pattern output performance.

[0045] In some embodiments of the present invention, the upper substrate 12 may also be made of a transparent material, preferably a glass material such as sapphire glass or quartz glass.

[0046] In some embodiments of the present invention, the electrode 3 is made of a conductive material, such as copper, aluminum, etc.

[0047] In this embodiment, if Figure 2 As shown, the RGB-LED 5 is welded and mounted on the free position on the upper surface of the lower substrate 11 (according to Figure 4 In the RGB-LED power supply circuit, the RGB-LED is soldered at the position of the RGB-LED soldering contact 8) and is powered by a copper power supply circuit printed on the lower substrate 11.

[0048] In this embodiment, if Figure 3 As shown, applying a current in the direction shown in the diagram to the loop formed by the semiconductor particles and electrode 3 causes the thermoelectric effect to absorb heat at the nodes of the upper substrate 12, resulting in a cooling effect, while heat is released at the nodes of the lower substrate 11, resulting in a heating effect. The opposite effect occurs if the current is reversed. By controlling this phenomenon, the surface temperature of the photothermal camouflage device can be adjusted, thereby controlling the output of the device's infrared spectrum pattern.

[0049] In this embodiment, if Figure 3 As shown, the visible light emitted by the RGB-LED 5 is scattered by the flexible scattering layer, thereby emitting a uniform visible light pattern.

[0050] In this embodiment, if Figure 4 As shown, the RGB-LED 5 is soldered to the contacts shown in the figure, and the operating circuit of the semiconductor cooling substrate 1 and the power supply circuit of the RGB-LED 5 are connected according to the circuit diagram. In this embodiment, the RGB-LED power supply circuit 16 solders the four RGB-LEDs to the RGB-LED soldering contacts 8. The RGB-LED power supply circuit 16 connects the common anode of the LEDs and the R, G, and B tripods to the four RGB-LED power input terminals 10. By controlling the voltages between the R, G, and B tripods and the common anode, the red, green, and blue light components of the LEDs can be adjusted to output the desired visible light.

[0051] The photothermal camouflage device provided in the aforementioned embodiment of the present invention increases the device's modulatable range for infrared images by applying semiconductor refrigeration technology to the photothermal camouflage device. At the same time, the device has the ability to output uniform and full-color visible light images, thereby achieving wide-spectrum photothermal camouflage.

[0052] Semiconductor cooling technology, also known as thermoelectric cooling, is a cooling method based on the thermoelectric phenomenon. This phenomenon occurs when direct current passes through a closed loop composed of two dissimilar materials, causing one contact surface to cool while the other becomes hot. Compared to traditional cooling technologies, this technology offers a simpler structure and reversible heat-cooling conversion, making it well-suited for controlling the temperature of photothermal camouflage devices, thereby achieving infrared pattern camouflage.

[0053] The aforementioned embodiments of the present invention provide a photothermal camouflage device comprising a luminescent semiconductor cooling substrate. A flexible scattering layer and a light-to-heat conversion layer can be added to the substrate, which can be connected to an external heat sink and control system. The heat sink can be mounted on the bottom of the semiconductor substrate to remove excess heat generated during device operation. The control system, connected to the semiconductor cooling substrate and internal RGB-LEDs, can control the device's visible and infrared patterns. This invention leverages the advantages of semiconductor cooling technology: its refrigerant-free operation, vibration-free and noiseless operation, and ease of operation. By integrating the semiconductor cooling substrate with RGB-LEDs, the device can produce a photothermal camouflage device with independently adjustable visible and infrared patterns.

[0054] In some embodiments of the present invention, a method for manufacturing a photothermal camouflage device is also provided.

[0055] The photothermal camouflage device manufacturing method includes a semiconductor refrigeration substrate manufacturing method, an RGB-LED installation method, a flexible scattering layer manufacturing method and a photothermal conversion layer manufacturing method.

[0056] The semiconductor refrigeration substrate is manufactured by patterning electrodes 3 of a predetermined thickness (e.g., approximately 100 μm) on the upper and lower surfaces of the lower and upper substrates. P-type and N-type semiconductor particles are alternately arranged at the locations where the electrodes on the upper and lower substrates overlap. Each semiconductor particle is connected to the electrodes on the upper and lower substrates by soldering to form a circuit, thereby connecting the upper and lower substrates.

[0057] The RGB-LED is mounted by printing a patterned copper power supply circuit in an empty space on the upper surface of the lower substrate. The pins of the RGB-LED are connected to the solder contacts of the copper power supply circuit by soldering to achieve the purpose of mounting and connecting. The RGB-LED is powered by energizing the copper power supply circuit.

[0058] The flexible scattering layer 2 is a flexible film made of a material with high infrared transparency and high visible light scattering ability. In some embodiments of the present invention, the material used for the flexible scattering layer is PMMA (in other embodiments, infrared transparent materials such as calcium fluoride and barium fluoride can also be used), and is manufactured by a phase separation process using a DMF solvent. The specific manufacturing method is as follows: an appropriate amount of PMMA particles (PMMA concentration of 0.1 to 0.3g / mL is acceptable, with an optimal concentration of 0.2g / mL) is placed in a reagent bottle containing DMF, a magnetic stirrer is added, and the mixture is stirred for more than 6 hours to fully dissolve the particles at the bottom of the bottle without any particles remaining. The PMMA solution is then ultrasonicated using an ultrasonic crusher. Ultrasonication can cut the long polymer chains in PMMA into small molecules, which is beneficial for enhancing the transmission and scattering ability of PMMA to light. The optimal parameters for the ultrasonication process are to use 90W power, and after each ultrasonication for a first preset time (e.g., 40 seconds), the solution is left stationary for a second preset time (e.g., 20 seconds) to prevent overheating, and then continued for a third preset time (e.g., 5 hours). The PMMA solution after the ultrasonic treatment is spin-coated using a spin coater. The steps are as follows: first, a clean glass substrate that has been cleaned with ethanol and plasma is adsorbed on the spin coater, and then the PMMA solution is evenly applied to the clean glass substrate. The spin coater is turned on for spin coating. The optimal speed of the spin coater is 250r / min. After the spin coating is completed, the glass substrate is placed in a fume hood for a fourth preset time (e.g., 1h) or more for volatilization treatment to obtain a PMMA flexible scattering film adsorbed on the glass substrate. Finally, an ultrasonic cleaner is used for ultrasonic cleaning to cause the film to fall off on the glass substrate to obtain the flexible scattering layer.

[0059] Polymethyl methacrylate (PMMA) is a chemically stable and mechanically strong polymer. A phase separation process using N,N-dimethylformamide (DMF) can create a porous structure in PMMA, resulting in high visible light scattering and infrared light transmittance. The resulting scattering film can improve the uniformity of a photothermal camouflage device's visible light pattern while maintaining the infrared pattern.

[0060] The light-to-heat conversion layer is a black colloidal film made of a flexible substrate and a light-absorbing and heating material. In some embodiments of the present invention, PDMS is used as the flexible substrate, and black carbon powder is selected as the light-absorbing and heating material (in other embodiments, the light-absorbing and heating material can be replaced by materials such as graphene, carbon nanotubes, etc., and the flexible material can also be replaced by PET, etc.). The specific manufacturing method is: the A component and the B component of PDMS are prepared in a mass ratio of 10:1, and then an appropriate mass of carbon powder is added, and the optimal concentration of carbon powder is 2wt% to obtain a light-absorbing and heating colloid. The prepared light-absorbing and heating colloid is vacuum degassed for 5 minutes to ensure the uniformity of film formation. The vacuum degassed speed is 1000r / min and the vacuum degree is less than -95kPa. The degassed colloid is extracted with a syringe and injected into the mold. During the extraction and injection process, it is necessary to ensure that no air enters. During injection, the colloid overflows from the vent to determine whether it is full. The mold filled with the colloid is placed in an oven at a preset temperature (such as 90°C) for curing (such as curing for 30 minutes). After curing is completed, the mold is taken out and the protrusions of the injection port and the outflow port at both ends are removed to obtain the completed black light-to-heat conversion layer.

[0061] Polydimethylsiloxane (PDMS) is a flexible substrate. By encapsulating black carbon powder, graphene, carbon nanotubes and other light-absorbing and heat-generating materials in PDMS to form a photothermal conversion film, it can be used to improve the brightness of infrared images.

[0062] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A photothermal camouflage device, characterized in that: The device comprises a semiconductor refrigeration substrate, in which an RGB-LED is arranged. The semiconductor refrigeration substrate further comprises a lower substrate, an upper substrate, electrodes, and semiconductor particles. The lower substrate and the upper substrate are arranged opposite to each other, and both the lower substrate and the upper substrate are provided with the electrodes. The semiconductor particles comprise P-type semiconductor particles and N-type semiconductor particles. The P-type semiconductor particles and the N-type semiconductor particles are alternately arranged between the lower substrate and the upper substrate and form a loop with the electrodes. The P-type semiconductor particles and the N-type semiconductor particles are alternately connected via the electrodes. During operation, an external voltage is applied to the loop, and the direction and magnitude of the current are adjusted to achieve cooling and heating of the device, thereby changing the infrared spectral image of the device. The semiconductor refrigeration substrate further includes an RGB-LED power supply circuit, which is patterned and printed on the lower substrate. The pins of the RGB-LED are connected to the solder contacts of the RGB-LED power supply circuit, and the RGB-LED is soldered and mounted in a free position on the upper surface of the lower substrate. The RGB-LED outputs a visible light image after being powered, and the output of the device's visible light pattern can be changed by changing the power supply mode of the RGB-LED. It also includes a control system, which is connected to the semiconductor refrigeration substrate and is used to control the voltage input of the semiconductor refrigeration substrate and the RGB-LED.

2. The photothermal camouflage device according to claim 1, characterized in that: It also includes a flexible scattering layer, which is located on the surface of the semiconductor refrigeration substrate and is used to make the visible light spots emitted by the RGB-LED uniform.

3. The photothermal camouflage device according to claim 2, characterized in that: The flexible scattering layer is a flexible film made of a material with high infrared transparency and high visible light scattering ability.

4. The photothermal camouflage device according to claim 2, characterized in that: It also includes a light-to-heat conversion layer, which covers the flexible scattering layer and is used to convert part of the visible light into infrared radiation.

5. The photothermal camouflage device according to claim 4, characterized in that: The light-to-heat conversion layer is a black colloidal film made of a flexible substrate and a light-absorbing and heat-generating material.

6. A photothermal camouflage device according to any one of claims 1 to 5, characterized in that: It also includes an external heat dissipation component, which is used to dissipate the extra heat generated during the operation of the device.

7. A method for manufacturing the photothermal camouflage device according to any one of claims 1 to 6, characterized in that: The method includes the steps of manufacturing a semiconductor refrigeration substrate, which includes: patterning electrodes of a preset thickness on the upper surface of the lower substrate and the lower surface of the upper substrate, alternately arranging the P-type semiconductor particles and the N-type semiconductor particles at the overlapping positions of the electrodes on the surfaces of the upper and lower substrates, and connecting each semiconductor particle to the electrodes on the surfaces of the upper and lower substrates to form a loop.

Images