Substrate processing apparatus and substrate processing method

Abstract

The present disclosure provides a substrate processing apparatus and a substrate processing method capable of evaluating whether or not the surface state of a substrate and the state of the substrate processing apparatus are good while detecting the covering state of a processing liquid on the surface of the substrate. The substrate processing apparatus executes the following processes: controlling a rotation holding part to rotate a substrate; a control unit that controls the supply unit to supply the processing liquid to the surface of the rotating substrate; detecting arrival of the processing liquid at the first irradiation site on the basis of a change in the intensity of the reflected light acquired by the first light sensor at the first irradiation site; detecting arrival of the processing liquid at the second irradiation portion based on a change in intensity of the reflected light acquired by the second light sensor at the second irradiation portion; calculating a diffusion velocity of the processing liquid on the surface of the substrate based on a time difference between an arrival time point at which the processing liquid reaches the first irradiation portion and an arrival time point at which the processing liquid reaches the second irradiation portion; and determining whether the processing of the substrate is appropriate based on the calculated diffusion velocity.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a substrate processing method. Background Art

[0002] At present, there is known a substrate processing system that sprays various processing liquids onto a substrate to process the substrate when performing micro-machining on a substrate (e.g., a semiconductor wafer) to manufacture a semiconductor device. Patent document 1 discloses a substrate processing method in which the difference between laser reflected light from a substrate before spraying a coating liquid onto the substrate and laser reflected light from the substrate during spraying the coating liquid onto the substrate is compared with a threshold value, thereby detecting the spraying state of the coating liquid.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2007-258658 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure describes a substrate processing apparatus and a substrate processing method that can detect the coverage state of a processing liquid on the surface of the substrate and evaluate whether the surface state of the substrate and the state of the substrate processing apparatus are good or not.

[0008] Solutions for solving problems

[0009] An example of a substrate processing device includes: a rotating holding portion configured to hold a substrate and rotate the substrate; a supply portion configured to supply a processing liquid to a surface of the substrate; a first light sensor configured to irradiate light toward a first irradiation portion set in a manner overlapping with the surface of the substrate held by the rotating holding portion and receive reflected light of the light; a second light sensor configured to irradiate light toward a second irradiation portion set in a manner overlapping with the surface of the substrate held by the rotating holding portion and receive reflected light of the light, the second irradiation portion being located radially outward of the substrate than the first irradiation portion; and a control portion. The control unit is configured to perform the following processes: a first process, controlling the rotating holding unit to rotate the substrate; a second process, controlling the supply unit to supply the processing liquid to the surface of the rotating substrate; a third process, detecting the arrival of the processing liquid at the first irradiation position based on the change in the intensity of the reflected light acquired by the first light sensor at the first irradiation position; a fourth process, detecting the arrival of the processing liquid at the second irradiation position based on the change in the intensity of the reflected light acquired by the second light sensor at the second irradiation position; and a fifth process, calculating the diffusion speed of the processing liquid on the surface of the substrate based on the time difference between the arrival time point of the processing liquid at the first irradiation position and the arrival time point of the processing liquid at the second irradiation position.

[0010] Effects of the Invention

[0011] According to the substrate processing apparatus and substrate processing method of the present disclosure, it is possible to detect the coverage state of the processing liquid on the surface of the substrate and evaluate whether the surface state of the substrate and the state of the substrate processing apparatus are good or not. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a top view schematically showing an example of a substrate processing system.

[0013] Figure 2 It is a side view schematically showing an example of a liquid processing unit.

[0014] Figure 3 It is a top view showing an example of the irradiation position by the optical sensor.

[0015] Figure 4 This is a block diagram showing an example of the main parts of the substrate processing system.

[0016] Figure 5 This is a schematic diagram showing an example of the hardware configuration of the controller.

[0017] Figure 6 This is a flowchart for explaining an example of a substrate processing procedure.

[0018] Figure 7 This is a side view for explaining an example of the calculation process of the diffusion rate.

[0019] Figure 8 This is a graph showing the results of measuring the intensity of reflected light at irradiation points P1 to P3 using a hydrophilic substrate.

[0020] Fig. 9 This is a graph showing the results of measuring the intensity of reflected light at irradiation points P1 to P3 using a hydrophilic substrate.

[0021] Fig.10 It is shown Figure 8 and Fig. 9 A graph of the coverage rate of the processing liquid under the processing conditions in FIG.

[0022] Fig.11 This is a graph showing the results of measuring the intensity of reflected light at irradiation points P1 to P3 using hydrophobic and hydrophilic substrates.

[0023] Fig.12 This is a graph showing the results of measuring the intensity of reflected light at irradiation points P1 to P3 using hydrophobic and hydrophilic substrates.

[0024] Fig.13 This is a graph showing the results of measuring the intensity of reflected light at irradiation points P1 to P3 using hydrophobic and hydrophilic substrates.

[0025] Fig.14 It is shown Figure 11 to Figure 13 A graph of the coverage rate of the processing liquid under the processing conditions in FIG.

[0026] Fig.15 It is a plan view showing another example of the irradiation position by the optical sensor.

[0027] Fig.16 This is a graph showing the results of measuring the intensity of reflected light at irradiation points P1 to P3 using hydrophobic and hydrophilic substrates.

[0028] Fig.17 This is a graph showing the results of measuring the intensity of reflected light at irradiation points P1 to P3 using hydrophobic and hydrophilic substrates.

[0029] Fig.18 This is a graph showing the results of measuring the intensity of reflected light at irradiation points P1 to P3 using hydrophobic and hydrophilic substrates. DETAILED DESCRIPTION

[0030] In the following description, the same reference numerals are used for the same elements or elements having the same functions, and repeated descriptions are omitted. In addition, in this specification, when referring to the top, bottom, right, and left in the drawings, the orientation of the reference numerals in the drawings is used as a reference.

[0031] [Structure of substrate processing system]

[0032] First, refer to Figure 1 A substrate processing system 1 (substrate processing apparatus) configured to process a substrate W will be described. The substrate processing system 1 includes a loading / unloading station 2, a processing station 3, and a controller Ctr (control unit). The loading / unloading station 2 and the processing station 3 may be arranged in a row in the horizontal direction, for example.

[0033] The substrate W may be in the shape of a circular plate or a plate other than a circular plate such as a polygon. The substrate W may also have a cutout portion after a portion is cut out. The cutout portion may be, for example, a notch (a U-shaped, V-shaped, etc. groove), or a straight portion extending in a straight line (the so-called orientation plane). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, and various other substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

[0034] The loading and unloading station 2 includes a loading section 4 (acquisition section), a loading and unloading section 5, and a shelf unit 6. The loading section 4 includes a Figure 1 The mounting section 4 is a plurality of mounting tables (not shown) arranged in the vertical direction of the substrate 7. Each mounting table is configured to be able to mount the carrier 7. When the carrier 7 is mounted on the mounting section 7, the mounting section 4 is configured to read data related to the type of the substrate W stored in the storage section 7a (described later) of the carrier 7 and send the data to the controller Ctr.

[0035] The carrier 7 is configured to accommodate at least one substrate W in a sealed state. The carrier 7 includes an opening and closing door (not shown) for placing in and taking out the substrate W. The carrier 7 includes a storage unit 7a, which stores data related to the type of substrate W accommodated in the carrier 7. Substrates W of the same type can be accommodated in one carrier 7. As information indicating the type of substrate W, for example, the surface energy of the substrate W, the warping of the substrate W, the configuration of the pattern formed on the surface of the substrate W, etc. can be cited. The surface energy of the substrate W is an indicator of the wettability of the surface of the substrate W, and it is possible to determine whether it is a hydrophobic substrate W or a hydrophilic substrate W based on its size. In addition, in this specification, "the surface of the substrate W" refers to the upper surface Wa or the lower surface Wb of the substrate W (see Figure 2 ).

[0036] The loading and unloading section 5 is arranged in the loading and unloading station 2 and the processing station 3 ( Figure 1 The loading and unloading section 5 includes an opening and closing door (not shown) provided for the loading section 4. When the carrier 7 is placed on the loading section 4, the opening and closing door of the carrier 7 and the opening and closing door of the loading and unloading section 5 are both opened, thereby communicating the inside of the loading and unloading section 5 with the inside of the carrier 7.

[0037] The loading and unloading section 5 has a transport arm A1 and a rack unit 6 built therein. The transport arm A1 is configured to be able to move horizontally in the width direction of the loading and unloading section 5, move up and down in the vertical direction, and rotate around a vertical axis. The transport arm A1 is configured to take out a substrate W from the carrier 7 and transfer it to the rack unit 6, and also to receive the substrate W from the rack unit 6 and return it to the carrier 7. The rack unit 6 is configured to be located near the processing station 3 and to accommodate the substrate W.

[0038] The processing station 3 includes a transport unit 8 and a plurality of liquid processing units U (substrate processing devices). The transport unit 8 is arranged in the direction ( Figure 1 The conveying unit 8 has a conveying arm A2 (conveying unit) built in. The conveying arm A2 is configured to be able to move horizontally in the length direction of the conveying unit 8, move up and down in the vertical direction, and rotate around the vertical axis. The conveying arm A2 is configured to take out the substrate W from the shelf unit 6 and transfer it to the liquid processing unit U, and also to receive the substrate W from the liquid processing unit U and return it to the shelf unit 6.

[0039] The plurality of liquid processing units U are disposed on both sides of the conveying section 8 along the length direction ( Figure 1 The liquid processing unit U is configured to perform a predetermined process (such as etching process, cleaning process, etc.) on the substrate W. The details of the liquid processing unit U will be described later.

[0040] The controller Ctr is configured to partially or entirely control the substrate processing system 1. Details of the controller Ctr will be described later.

[0041] [Details of Liquid Processing Unit]

[0042] Next, refer to Figure 2 and Figure 3 The liquid processing unit U will be described in detail. Figure 2 As illustrated, the liquid processing unit U includes a rotating holding unit 10 , supply units 20 and 30 , an imaging unit 40 , and a plurality of optical sensors 50 .

[0043] The rotation holding unit 10 includes a driving unit 11, a shaft 12, and a holding unit 13. The driving unit 11 is configured to operate based on an operation signal from a controller Ctr to rotate the shaft 12. The driving unit 11 may be a power source such as an electric motor.

[0044] The holding portion 13 is provided at the front end of the shaft 12. The holding portion 13 is configured to hold the lower surface Wb of the substrate W by suction, for example. That is, the rotation holding portion 10 may be configured to rotate the substrate W around the rotation center axis Ax perpendicular to the surface of the substrate W when the substrate W is in a substantially horizontal position.

[0045] The supply unit 20 is configured to supply the chemical liquid L1 to the upper surface Wa of the substrate W. Although not shown in the figure, the supply unit 20 can also be configured to supply the chemical liquid L1 to the lower surface Wb of the substrate W. The chemical liquid L1 can be, for example, an acidic chemical liquid, an alkaline chemical liquid, or an organic chemical liquid. The acidic chemical liquid can include, for example, SC-2 liquid (a mixture of hydrochloric acid, hydrogen peroxide, and pure water), SPM (a mixture of sulfuric acid and hydrogen peroxide water), HF liquid (hydrofluoric acid), DHF liquid (dilute hydrofluoric acid), HNO3+HF liquid (a mixture of nitric acid and hydrofluoric acid), etc. The alkaline chemical liquid can include, for example, SC-1 liquid (a mixture of ammonia, hydrogen peroxide, and pure water), hydrogen peroxide water, etc.

[0046] The supply unit 20 includes a liquid source 21, a pump 22, a valve 23, a nozzle 24, a pipe 25, and a drive source 26. The liquid source 21 is a supply source of the drug liquid L1. The pump 22 is configured to operate based on an operation signal from the controller Ctr to deliver the drug liquid L1 sucked from the liquid source 21 to the nozzle 24 via the pipe 25 and the valve 23.

[0047] The valve 23 is configured to operate based on an operation signal from the controller Ctr to switch between an open state that allows the fluid to flow through the pipe 25 and a closed state that blocks the fluid from flowing through the pipe 25. The nozzle 24 is arranged above the substrate W in such a manner that the nozzle is directed toward the upper surface Wa of the substrate W. The nozzle 24 is configured to eject the liquid medicine L1 sent from the pump 22 from the nozzle toward the upper surface Wa of the substrate W. The substrate W is rotated by the rotating holding part 10, so the liquid medicine L1 ejected onto the upper surface Wa of the substrate W is diffused from the center of the substrate W toward the peripheral portion at a predetermined diffusion speed, and is thrown out from the peripheral edge of the substrate W to the outside.

[0048] The piping 25 is connected to the liquid source 21, the pump 22, the valve 23, and the nozzle 24 in sequence from the upstream side. The driving source 26 is directly or indirectly connected to the nozzle 24. The driving source 26 is configured to operate based on an action signal from the controller Ctr so that the nozzle 24 moves in the horizontal direction or the vertical direction above the substrate W. Therefore, the liquid medicine L1 can be sprayed not only toward the center of the upper surface Wa of the substrate W, but also toward any position of the upper surface Wa of the substrate W. For example, the nozzle 24 can be moved from the periphery to the center of the substrate W while the liquid medicine L1 is continuously sprayed from the nozzle 24 (so-called sweeping action). Alternatively, the nozzle 24 can be moved from the center to the periphery of the substrate W while the liquid medicine L1 is continuously sprayed from the nozzle 24 (so-called sweeping action).

[0049] The supply unit 30 is configured to supply a rinse liquid L2 to the substrate W. The rinse liquid L2 is, for example, a liquid for removing (rinsing) the chemical solution L1 supplied to the upper surface Wa of the substrate W, dissolved components of the film obtained by the chemical solution L1, etching residues, etc. from the substrate W. The rinse liquid L2 may also include, for example, pure water (DIW: deionized water), ozone water, carbonated water (CO2 water), ammonia water, etc.

[0050] The supply unit 30 includes a liquid source 31, a pump 32, a valve 33, a nozzle 34, a pipe 35, and a drive source 36. The liquid source 31 is a supply source of the rinse liquid L2. The pump 32 is configured to operate based on an operation signal from the controller Ctr to deliver the rinse liquid L2 sucked from the liquid source 31 to the nozzle 34 via the pipe 35 and the valve 33.

[0051] The valve 33 is configured to operate based on an operation signal from the controller Ctr to switch between an open state that allows the fluid to flow through the pipe 35 and a closed state that blocks the fluid from flowing through the pipe 35. The nozzle 34 is arranged above the substrate W in such a manner that the nozzle is directed toward the upper surface Wa of the substrate W. The nozzle 34 is configured similarly to the nozzle 24 to eject the rinsing liquid L2 delivered from the pump 32 from the nozzle toward the upper surface Wa of the substrate W. The substrate W is rotated by the rotating holding portion 10, so that the rinsing liquid L2 ejected onto the upper surface Wa of the substrate W is diffused from the center portion of the substrate W toward the peripheral portion at a predetermined diffusion speed and is thrown out from the peripheral edge of the substrate W to the outside.

[0052] The piping 35 is connected to the liquid source 31, the pump 32, the valve 33, and the nozzle 34 in sequence from the upstream side. The driving source 36 is directly or indirectly connected to the nozzle 34. The driving source 36 is configured to operate based on an action signal from the controller Ctr so that the nozzle 34 moves in the horizontal direction or the vertical direction above the substrate W. Therefore, the rinsing liquid L2 can be sprayed not only toward the center of the upper surface Wa of the substrate W, but also toward any position of the upper surface Wa of the substrate W. For example, the nozzle 34 can be moved from the periphery to the center of the substrate W while the rinsing liquid L2 is continuously sprayed from the nozzle 34 (so-called sweeping action). Alternatively, the nozzle 34 can be moved from the center to the periphery of the substrate W while the rinsing liquid L2 is continuously sprayed from the nozzle 34 (so-called sweeping action).

[0053] The imaging unit 40 is disposed above the substrate W. The imaging unit 40 is configured to operate based on an operation signal from the controller Ctr to capture an image of the upper surface Wa of the substrate W. Specifically, the imaging unit 40 can capture the coverage state of the chemical liquid L1 or the rinse liquid L2 on the upper surface Wa of the substrate W when the chemical liquid L1 or the rinse liquid L2 is supplied to the upper surface Wa of the substrate W in a static image or a dynamic image.

[0054] The imaging unit 40 is configured to send the captured image to the controller Ctr. The imaging unit 40 may be, for example, a CCD camera, a CMOS camera, etc. The imaging unit 40 may be disposed in the liquid processing unit U without any particular limitation as long as it is disposed in the liquid processing unit U. For example, when the chemical solution L1 or the rinse solution L2 is supplied to the lower surface Wb of the substrate W, the imaging unit 40 may be disposed below the substrate W.

[0055] A plurality of light sensors 50 are arranged above the substrate W. The plurality of light sensors 50 include an irradiation unit (not shown) and a light receiving unit (not shown). The irradiation unit is configured to operate based on an operation signal from the controller Ctr to irradiate light onto the upper surface Wa of the substrate W being rotated by the rotation holding unit 10. The light receiving unit is configured to receive light (reflected light) reflected from the upper surface Wa of the substrate W and transmit the intensity of the reflected light (hereinafter referred to as "reflection intensity") to the controller Ctr.

[0056] The optical sensor 50 may be, for example, a laser sensor, a photoelectric sensor, or a color sensor. When the optical sensor 50 is a laser sensor, the irradiation unit may use, for example, red laser (wavelength: 655 nm) as the laser beam, or other types of laser beams.

[0057] The irradiation part of the optical sensor 50 may irradiate light downward in a direction perpendicular to the upper surface Wa of the substrate W. The irradiation part of the optical sensor 50 may irradiate light to the upper surface Wa of the substrate W via a light reflecting member (e.g., a mirror part), and the light receiving part of the optical sensor 50 may receive reflected light of the light via the mirror part. In these cases, the irradiation part and the light receiving part of the optical sensor 50 may be arranged in the same housing, or may be arranged physically separately.

[0058] The irradiation portion of the optical sensor 50 may irradiate light obliquely downward in a direction inclined relative to the upper surface Wa of the substrate W. In this case, the irradiation portion and the light receiving portion of the optical sensor 50 may be physically separated and arranged in such a manner that the portion of the upper surface Wa of the substrate W to which light is irradiated is located between the irradiation portion and the light receiving portion.

[0059] like Figure 2 As shown in the example, the plurality of optical sensors 50 may include three optical sensors 51 to 53. The optical sensors 51 to 53 are respectively configured to irradiate light toward irradiation points P1 to P3 set so as to overlap with the upper surface Wa of the substrate W held by the rotation holding unit 10, and receive reflected light reflected from the irradiation points P1 to P3. The irradiation points P1 to P3 are respectively fixed positions and do not change even when the substrate W rotates.

[0060] like Figure 2 As shown in the example, the irradiation positions P1 to P3 are set at different positions. That is, the irradiation positions P1 to P3 can be arranged from the center side to the peripheral side of the substrate W. Specifically, the irradiation position P2 can be located closer to the peripheral side of the substrate W than the irradiation position P1, and the irradiation position P3 can be located closer to the peripheral side of the substrate W than the irradiation position P2. Figure 3 As shown in (a) of FIG. 1 , the irradiation positions P1 to P3 may be arranged in a row in the radial direction of the substrate W. Alternatively, Figure 3 As shown in (b) of FIG. 1 , the irradiation positions P1 to P3 may be arranged staggered in the circumferential direction of the substrate W, rather than arranged in the radial direction of the substrate W. That is, the irradiation positions P1 and P2 may not be on the straight line connecting the irradiation position P3 and the center of the substrate W, the irradiation positions P2 and P3 may not be on the straight line connecting the irradiation position P1 and the center of the substrate W, and the irradiation positions P1 and P3 may not be on the straight line connecting the irradiation position P2 and the center of the substrate W.

[0061] The intervals between the irradiation positions P1 to P3 may be approximately equal or different. When the radius of the substrate W is about 150 mm, the irradiation position P1 may be about 50 mm from the center of the substrate W, the irradiation position P2 may be about 100 mm from the center of the substrate W, and the irradiation position P3 may be about 147 mm from the center of the substrate W.

[0062] [Controller details]

[0063] like Figure 4 As shown in the example, the controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an indication unit M4 as functional modules. These functional modules are just for the convenience of dividing the functions of the controller Ctr, and do not mean that the hardware constituting the controller Ctr must be divided into such modules. Each functional module is not limited to being implemented by executing a program, but can also be implemented by a dedicated circuit (such as a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) in which the dedicated circuit is integrated.

[0064] The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each unit of the substrate processing system 1 including the liquid processing unit U. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. In addition, in the following, each unit of the substrate processing system 1 may include a rotation holding unit 10, supply units 20, 30, an imaging unit 40, and a light sensor 50.

[0065] The storage unit M2 is configured to store various data. The storage unit M2 may store, for example, a program read from the recording medium RM into the reading unit M1, setting data input by an operator via an external input device (not shown), etc. The storage unit M2 may also store imaging data captured by the imaging unit 40. The storage unit M2 may also store data on reflection intensity acquired by the optical sensor 50. The storage unit M2 may also store data related to the type of substrate W accommodated in the carrier 7, which is read from the storage unit 7a of the carrier 7 in the loading unit 4.

[0066] The storage unit M2 may also store correspondence information that corresponds data related to the type of substrate W with an allowable range R of diffusion rate of the processing liquid on the upper surface Wa of the substrate W when the processing liquid (chemical liquid L1 or rinse liquid L2) is supplied to the upper surface Wa of the substrate W while the substrate W having the type is rotating. Here, the allowable range R can be defined as a diffusion rate included between an allowable lower limit value Vmin and an allowable upper limit value Vmax, for example.

[0067] The allowable range R may differ according to the type of substrate W. For example, when the substrate W is hydrophobic, there is a tendency for the diffusion rate to decrease, and thus the allowable lower limit value Vmin and the allowable upper limit value Vmax may take relatively small values. On the other hand, for example, when the substrate W is hydrophilic, there is a tendency for the diffusion rate to increase, and thus the allowable lower limit value Vmin and the allowable upper limit value Vmax may take relatively large values. In addition, for example, when the substrate W is warped in a manner such that the central portion of the substrate W protrudes downward, there is a tendency for the diffusion rate to decrease, and thus the allowable lower limit value Vmin and the allowable upper limit value Vmax may take relatively small values. On the other hand, for example, when the substrate W is warped in a manner such that the central portion of the substrate W protrudes upward, there is a tendency for the diffusion rate to increase, and thus the allowable lower limit value Vmin and the allowable upper limit value Vmax may take relatively large values. For example, when the proportion of the pattern extending along the circumferential direction of the substrate W among the patterns formed on the surface of the substrate W is large, there is a tendency for the diffusion rate to decrease, and thus the allowable lower limit value Vmin and the allowable upper limit value Vmax may take relatively small values. On the other hand, for example, when the proportion of patterns extending in the radial direction of the substrate W among the patterns formed on the surface of the substrate W is large, the diffusion rate tends to increase, so the allowable lower limit value Vmin and the allowable upper limit value Vmax can take relatively large values.

[0068] In view of the above, an example of the correspondence information stored in the storage unit M2 is shown below.

[0069] Type A of substrate W: allowable range R1 (allowable lower limit value Vmin1 to allowable upper limit value Vmax1)

[0070] Type B of substrate W: allowable range R2 (allowable lower limit value Vmin2 to allowable upper limit value Vmax2)

[0071] Type C of substrate W: allowable range R3 (allowable lower limit value Vmin3 to allowable upper limit value Vmax3)

[0072] …

[0073] In addition, the allowable range R may also include the adjustment range Ra and the adjustment range Rb. The adjustment range Ra can be defined as a diffusion speed included between the adjustment-free lower limit value Vlow and the adjustment-free upper limit value Vhigh. The adjustment-free lower limit value Vlow is a value greater than the allowable lower limit value Vmin, and the adjustment-free upper limit value Vhigh is a value smaller than the allowable upper limit value Vmax. That is, the adjustment-free range Ra is included in the allowable range On the other hand, the adjustment range Rb can be defined as a diffusion rate included in the range from the allowable lower limit value Vmin to the no-adjustment lower limit value Vlow and the range from the no-adjustment upper limit value Vhigh to the allowable upper limit value Vmax. That is, the lower limit value of the adjustment range Rb is equal to the allowable lower limit value Vmin and smaller than the no-adjustment lower limit value Vlow, and the upper limit value of the adjustment range Rb is equal to the allowable upper limit value Vmax and larger than the no-adjustment upper limit value Vhigh. The no-adjustment range Ra and the adjustment range Rb can also be set to values ​​corresponding to the type of substrate W.

[0074] The processing unit M3 is configured to process various data and can generate a signal for operating each unit of the substrate processing system 1 based on the various data stored in the storage unit M2, for example.

[0075] The instruction unit M4 is configured to transmit an operation signal generated by the processing unit M3 to each unit of the substrate processing system 1 .

[0076] The hardware of the controller Ctr may be composed of, for example, one or more computers for control. Figure 5 As shown, the controller Ctr may include a circuit C1 as a hardware structure. The circuit C1 may be composed of circuit elements (circuitry). The circuit C1 may also include a processor C2, a memory C3, a storage device C4, a driver C5, and an input / output port C6.

[0077] The processor C2 may be configured to execute a program in cooperation with at least one of the memory C3 and the storage device C4, and to perform input and output of signals via the input / output port C6, thereby realizing the above-mentioned functional modules. The memory C3 and the storage device C4 may function as the storage unit M2. The driver C5 may be a circuit configured to drive each part of the substrate processing system 1 respectively. The input / output port C6 may be configured to relay the input and output of signals between the driver C5 and each part of the substrate processing system 1.

[0078] The substrate processing system 1 may have one controller Ctr, or may have a controller group (control unit) composed of multiple controllers Ctr. When the substrate processing system 1 has a controller group, the above-mentioned functional modules may be implemented by one controller Ctr respectively, or may be implemented by a combination of two or more controllers Ctr. When the controller Ctr is composed of multiple computers (circuit C1), the above-mentioned functional modules may be implemented by one computer (circuit C1) respectively, or may be implemented by a combination of two or more computers (circuit C1). The controller Ctr may also have multiple processors C2. In this case, the above-mentioned functional modules may be implemented by one processor C2 respectively, or may be implemented by a combination of two or more processors C2.

[0079] [Substrate processing method]

[0080] Next, refer to Figure 6 to Figure 14 A method of processing the substrate W using the processing liquid will be described.

[0081] First, the carrier 7 is placed on the mounting table of the mounting unit 4. The carrier 7 contains at least one substrate W of the same type. When the mounting unit 4 detects that the carrier 7 is placed on the mounting table, it reads data related to the type of the substrate W stored in the storage unit 7a of the carrier 7 and sends the data to the controller Ctr (refer to Figure 6 The controller Ctr retrieves the corresponding information stored in the storage unit M2 based on the data related to the type of the substrate W, and obtains the allowable range R corresponding to the data related to the type of the substrate W (refer to Figure 6 Step S2).

[0082] Next, the controller Ctr controls the transfer arms A1 and A2 to take out a substrate W from the carrier 7 and transfer it to any liquid processing unit U. The holding unit 13 is made to hold the substrate W transferred to the liquid processing unit U by suction (see Figure 6 Step S3).

[0083] Next, the controller Ctr controls the rotation holding unit 10 to rotate the substrate W while holding the lower surface Wb of the substrate W by suction through the holding unit 13. In this state, the controller Ctr controls the supply unit 20 to supply the chemical solution L1 from the nozzle 24 to the upper surface Wa of the substrate W for a predetermined time (see Figure 6 Step S4). At this time, the nozzle 24 can perform a sweeping-in action or a sweeping-out action. The liquid medicine L1 supplied to the upper surface Wa of the substrate W is diffused on the entire surface of the substrate W by the rotation of the substrate W, and is thrown outward from the periphery of the substrate W. Therefore, while the liquid medicine L1 is continuously supplied from the nozzle 24, a liquid film of the liquid medicine L1 is formed on the upper surface Wa of the substrate W. Thus, the upper surface Wa of the substrate W is processed. At this time, the camera unit 40 can capture the coverage state of the liquid medicine L1 on the upper surface Wa of the substrate W when the liquid medicine L1 is supplied to the upper surface Wa of the substrate W, and send the camera data to the controller Ctr.

[0084] Next, the controller Ctr controls the rotation holding unit 10 to rotate the substrate W while holding the back side of the substrate W by suction through the holding unit 13. In this state, the controller Ctr controls the supply unit 30 to supply the rinse liquid L2 from the nozzle 34 to the upper surface Wa of the substrate W for a predetermined time (see Figure 6Step S5). At this time, the nozzle 34 can perform a sweeping-in action or a sweeping-out action. The rinsing liquid L2 supplied to the upper surface Wa of the substrate W is diffused on the entire surface of the substrate W by the rotation of the substrate W, and is thrown out to the outside from the periphery of the substrate W. Therefore, while the rinsing liquid L2 is continuously supplied from the nozzle 34, a liquid film of the rinsing liquid L2 is formed on the upper surface Wa of the substrate W. Thus, the upper surface Wa of the substrate W is cleaned. At this time, the camera unit 40 can capture the coverage state of the rinsing liquid L2 on the upper surface Wa of the substrate W when the rinsing liquid L2 is supplied to the upper surface Wa of the substrate W, and send the camera data to the controller Ctr.

[0085] Here, if Figure 7 As shown in the example, from the time point before the rinse liquid L2 is supplied to the upper surface Wa of the substrate W, light is irradiated to the irradiation points P1 to P3 by the optical sensors 51 to 53, and changes in reflection intensity are obtained (see Figure 6 Step S6). When the rinsing liquid L2 diffuses on the upper surface Wa of the substrate W toward the radial outer side of the substrate W, the rinsing liquid L2 passes through the irradiation parts P1 to P3 in sequence. Before and after the rinsing liquid L2 passes through the irradiation parts P1 to P3, the reflection intensity from the upper surface Wa of the substrate W changes greatly. It is estimated that this is because the surface of the liquid film of the rinsing liquid L2 changes drastically, causing diffuse reflection of the light. In addition, as the main reasons for the change in reflection intensity, the type of processing liquid, the flow rate of the processing liquid, the thickness of the liquid film of the processing liquid, etc. can be considered.

[0086] Here, in Figure 8 and Fig. 9 2 shows the results of measuring the reflection intensity at the irradiation positions P1 to P3 using a hydrophilic substrate W. Specifically, the hydrophilic substrate W is a substrate having a thermal oxide film (Th-Ox) formed on the surface.

[0087] Figure 8 (a) shows changes in reflection intensity at each of the irradiation points P1 to P3 when the discharge flow rate of the rinse liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 200 rpm. Figure 8 (b) shows changes in reflection intensity at each of the irradiation points P1 to P3 when the discharge flow rate of the rinse liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 500 rpm. Figure 8 (c) shows changes in reflection intensity at each of the irradiation points P1 to P3 when the discharge flow rate of the rinse liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 1000 rpm. Figure 8(d) shows changes in reflection intensity at each of the irradiation points P1 to P3 when the discharge flow rate of the rinse liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 1500 rpm.

[0088] Fig. 9 (a) shows changes in reflection intensity at each of the irradiation positions P1 to P3 when the discharge flow rate of the rinse liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 200 rpm. Fig. 9 (b) shows changes in reflection intensity at each of the irradiation points P1 to P3 when the discharge flow rate of the rinse liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 500 rpm. Fig. 9 (c) shows changes in reflection intensity at each of the irradiation points P1 to P3 when the discharge flow rate of the rinse liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 1000 rpm. Fig. 9 (d) shows changes in reflection intensity at each of the irradiation points P1 to P3 when the discharge flow rate of the rinse liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 1500 rpm.

[0089] like Figure 8 and Fig. 9 As shown in FIG. 1 , it can be found that the reflection intensity increases rapidly in the order of the irradiation positions P1 to P3 (the reflection intensity increases). That is, it can be determined that the processing liquid reaches the irradiation positions P1 to P3 at the time when the reflection intensity increases. Fig.10 As shown in FIG. 1 , the time points of the rise of the reflection intensity and the positions of the irradiated parts P1 to P3 are marked in the graph, and an approximate straight line is obtained. From this, the diffusion rate can be calculated based on the slope of the approximate straight line (i.e., the time difference when the treatment liquid reaches the irradiated parts P1 to P3) (refer to FIG. 1 ). Figure 6 Step S7).

[0090] Fig.10 (a) shows the rising time points of the reflection intensity at each position of the irradiated parts P1 to P3 when the ejection flow rate of the rinsing liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 200 rpm, and the rising time points of the reflection intensity at each position of the irradiated parts P1 to P3 when the ejection flow rate of the rinsing liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 200 rpm. Fig.10(b) shows the rising time points of the reflection intensity at each position of the irradiated parts P1 to P3 when the ejection flow rate of the rinsing liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 500 rpm, and the rising time points of the reflection intensity at each position of the irradiated parts P1 to P3 when the ejection flow rate of the rinsing liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 500 rpm.

[0091] Fig.10 (c) shows the rising time points of the reflection intensity at each position of the irradiated parts P1 to P3 when the ejection flow rate of the rinsing liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 1000 rpm, and the rising time points of the reflection intensity at each position of the irradiated parts P1 to P3 when the ejection flow rate of the rinsing liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 1000 rpm. Fig.10 (d) shows the rising time points of the reflection intensity at each position of the irradiated parts P1 to P3 when the ejection flow rate of the rinsing liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 1500 rpm, and the rising time points of the reflection intensity at each position of the irradiated parts P1 to P3 when the ejection flow rate of the rinsing liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 1500 rpm.

[0092] In addition, the results of measuring the reflection intensity at the irradiation positions P1 to P3 using the hydrophobic substrate W in the same manner as above were compared with those of the hydrophilic substrate W described above, and Figure 11 to Figure 13 Shown in. Fig.11 (a) to (c) show changes in reflection intensity at respective positions of irradiation points P1 to P3 on a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 1000 ml / min and the rotation speed of the substrate W is set to 1000 rpm. Fig.12 (a) to (c) show changes in reflection intensity at respective positions of irradiation points P1 to P3 on a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 1000 rpm. Fig.13 (a) to (c) show changes in reflection intensity at respective positions of irradiation points P1 to P3 on a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 1000 rpm.

[0093] Specifically, the hydrophobic substrate W is a silicon substrate (so-called "bare silicon") from which a natural oxide film has been removed by surface treatment using a DHF solution (dilute hydrofluoric acid). Figure 11 to Figure 13 As shown in FIG. 1 , it can be found that the reflection intensity increases sharply in the order of the irradiation points P1 to P3 (the reflection intensity increases) in the hydrophobic substrate W. However, it is found that the slower the rotation speed of the substrate W, the slower the increase in the reflection intensity at the irradiation point P3 compared to the hydrophilic substrate W. Therefore, Fig.14 As shown in FIG. 1 , it is confirmed that the diffusion speed on the hydrophobic substrate W is slower than that on the hydrophilic substrate W.

[0094] Next, the controller Ctr determines whether the diffusion rate calculated in step S7 is within the allowable range R obtained in step S2 (see Figure 6 In the case where the controller Ctr determines that the diffusion rate calculated in step S7 is not within the allowable range R obtained in step S2 (refer to Figure 6 Therefore, the controller Ctr stores the image data of the substrate W being processed captured by the image capturing unit 40 or the processing conditions of the substrate W together with the inappropriate judgment result in the storage unit M2 (refer to Figure 6 At this time, the controller Ctr may notify an alarm indicating that the diffusion speed is not within the allowable range R from a notification unit (not shown) (for example, an alarm may be displayed on a display, or an alarm sound or an alarm guide may be emitted from a speaker). After step S9, the processing of the substrate W is completed. Thereafter, the processing of the subsequent substrate W may be interrupted, or the processing of the subsequent substrate W may be performed using a liquid processing unit U separate from the liquid processing unit U that may have processed the inappropriate substrate W.

[0095] When the controller Ctr determines that the diffusion rate calculated in step S7 is within the allowable range R obtained in step S2 (see Figure 6 In step S8, the controller Ctr determines whether the diffusion speed calculated in step S7 is within the adjustment-free range Ra of the allowable range R obtained in step S2. If the controller Ctr determines that the diffusion speed calculated in step S7 is not within the adjustment-free range Ra of the allowable range R obtained in step S2 (refer to Figure 6 If the processing condition of the substrate W is "No" in step S10, there may be room for improvement. Therefore, the controller Ctr changes the processing condition of the subsequent substrate W (refer to Figure 6Step S11). Here, as the changed processing conditions, for example, the rotation speed of the subsequent substrate W, the flow rate of the processing liquid sprayed on the subsequent substrate W, etc. can be cited. At this time, similarly to step S9, the controller Ctr can store the camera data of the processing of the substrate W captured by the camera unit 40 or the processing conditions of the substrate W together with the judgment result that the diffusion speed is not within the range Ra that does not require adjustment in the storage unit M2. In addition, the controller Ctr can notify an alarm indicating that the diffusion speed is not within the range Ra that does not require adjustment from the notification unit not shown in the figure in the same way as mentioned above. After step S11, the processing of the substrate W is completed. Thereafter, the processing of the subsequent substrate W can be performed under the changed processing conditions using a liquid processing unit U that is separate from the liquid processing unit U that obtains the judgment result that the diffusion speed is not within the range Ra that does not require adjustment. Alternatively, the processing of the subsequent substrate W can be performed under the changed processing conditions using the liquid processing unit U that obtains the judgment result that the diffusion speed is not within the range Ra that does not require adjustment.

[0096] When the controller Ctr determines that the diffusion rate calculated in step S7 is within the adjustment-free range Ra of the allowable range R acquired in step S2 (see Figure 6 According to "Yes" in step S10 of FIG. 1 , it is estimated that the processing of the substrate W is properly performed. Therefore, after step S9, the processing of the substrate W is completed. Thereafter, the processing of the subsequent substrate W can be performed using the same liquid processing unit U under the same processing conditions.

[0097] [effect]

[0098] According to the above example, it is possible to understand at what speed the processing liquid diffuses on the surface of the substrate W. Here, the diffusion speed may change due to the influence of the surface state of the substrate W, the state of the liquid processing unit U, etc. In the case of extremely slow diffusion speed, for example, it can be judged that there is a possibility that the entire surface of the substrate W is not covered by the processing liquid. On the other hand, in the case of extremely fast diffusion speed, for example, it can be judged that there is a possibility that the liquid processing unit U has a bad condition, the surface state of the substrate W has a bad condition, etc. Therefore, by judging whether the processing of the substrate W is appropriate based on the diffusion speed, it is possible to evaluate whether the surface state of the substrate W and the state of the liquid processing unit U are good while detecting the covering state of the processing liquid on the surface of the substrate W. In addition, compared with the case of using a camera to obtain the surface state of the substrate W, by using the optical sensor 50, the size of the liquid processing unit U can be suppressed, and the amount of data processed is small, thereby simplifying the calculation process. Therefore, the detection of the covering state of the processing liquid on the surface of the substrate W and the evaluation of whether the surface state of the substrate W and the state of the liquid processing unit U are good can be achieved at a low cost.

[0099] According to the above example, the permissible range R is obtained based on the data related to the type of substrate W read from the storage unit 7a of the carrier 7 and the corresponding information stored in the storage unit M2, and it is determined whether the calculated diffusion rate is within the permissible range R. In this case, the permissible range R of the diffusion rate of the processing liquid is appropriately set according to the type of substrate W. Therefore, the detection of the coverage state of the processing liquid on the upper surface Wa of the substrate W and the evaluation of whether the surface state of the substrate W and the state of the liquid processing unit U are good can be performed with higher accuracy.

[0100] According to the above example, the allowable range R includes the adjustment-free range Ra and the adjustment range Rb, and it is determined whether the calculated diffusion rate is within the adjustment-free range Ra. In this case, even if it is determined that the processing result of the substrate W is good, the rotation speed of the substrate W or the flow rate of the processing liquid is changed when the diffusion rate is within the adjustment range Rb. That is, the processing conditions of the substrate W are adjusted so that the processing results of the subsequent substrate W become better. Therefore, the substrate W can be processed more appropriately.

[0101] According to the above example, when it is determined that the covering state of the surface of the substrate W is inappropriate, the imaging data of the substrate W being processed captured by the imaging unit 40 or the processing conditions of the substrate W are stored in the storage unit M2 together with the inappropriate judgment result. In this case, the operator can easily confirm the processing status of the substrate W when the inappropriate judgment result is obtained.

[0102] [Modifications]

[0103] The disclosure in this specification should be considered to be illustrative in all aspects and not restrictive. Various omissions, substitutions, and changes may be made to the above examples without departing from the scope of the claims and the gist thereof.

[0104] (1) In the liquid processing unit U, the processing of the substrate W can be performed in a light-shielded space. For example, the housing constituting the liquid processing unit U can be made of a light-shielding material. In this case, since the optical sensor 50 is used, the diffusion speed can be calculated even when the substrate W is processed using a processing liquid whose properties may change according to light. Therefore, compared with the case of using a camera, it is possible to detect the coverage state of the processing liquid on the surface of the substrate W for more types of processing liquids and evaluate whether the surface state of the substrate W and the state of the liquid processing unit U are good.

[0105] (2) In the above example, when the rinse liquid L2 is supplied to the substrate W, the diffusion speed of the rinse liquid L2 is calculated by the optical sensor 50, and it is determined whether the substrate W is properly processed. However, when the chemical liquid L1 is supplied to the substrate W, it is also possible to calculate the diffusion speed of the chemical liquid L1 and determine whether the substrate W is properly processed.

[0106] (3) In the above example, the diffusion velocity is calculated using the three optical sensors 51 to 53 , but the diffusion velocity may be calculated using at least two optical sensors 50 .

[0107] (4) When the nozzles 24 and 34 supply the processing liquid to the substrate W while performing a sweeping action from the center of the substrate W toward the periphery, the diffusion rate of the processing liquid can also be calculated by the optical sensor 50. Specifically, when the nozzles 24 and 34 perform a sweeping action, the processing liquid gradually dries from the center of the substrate W due to evaporation, so the reflection intensity changes greatly before and after drying. Therefore, the evaporation rate of the processing liquid is calculated based on this change. The faster the diffusion rate of the processing liquid, the faster the evaporation rate of the processing liquid, and the slower the diffusion rate of the processing liquid, the slower the evaporation rate of the processing liquid. Therefore, as a result, by calculating the evaporation rate of the processing liquid, the diffusion rate of the processing liquid can be obtained.

[0108] (5) In addition, Fig.15 As shown in the example, the processing liquid supplied to the substrate W may spread unevenly in the radial direction of the substrate W. In this case, by using at least four optical sensors 50, it is possible to detect the uneven spread of the processing liquid. Specifically, a plurality of irradiation locations arranged in the first direction (in Fig.15 In the example, the irradiation positions P1 to P3 are three points), and a plurality of irradiation positions arranged in the second direction (in Fig.15 The first direction extends along the radial direction of the substrate W. The second direction extends along the radial direction of the substrate W and in a direction different from the first direction. Furthermore, the diffusion speed of the processing liquid when passing through the plurality of irradiation positions arranged in the first direction and the diffusion speed of the processing liquid when passing through the plurality of irradiation positions arranged in the second direction are calculated respectively, and the difference between the two diffusion speeds is calculated. When the difference is greater than a predetermined threshold value, it can be determined that there is uneven diffusion of the processing liquid.

[0109] (6) The controller Ctr may arrange the calculated diffusion speeds in a time series and store them in the storage unit M2 as a so-called log. The controller Ctr may predict the period when the diffusion speed is expected to be outside the allowable range R in the future based on the information of the log accumulated over time. For example, when a plurality of diffusion speeds constituting the log gradually increase over time, the period when the diffusion speed exceeds the allowable range R in the future may be predicted by calculating their approximate line.

[0110] (7) In addition, in the case of a hydrophobic substrate W, depending on the processing conditions, the processing liquid may not cover the surface of the substrate W. In this regard, see the results of processing the substrate W under various processing conditions using a hydrophobic substrate W and a hydrophilic substrate W. Figure 16 to Figure 18 To explain.

[0111] Fig.16 (a) to (c) are graphs showing changes in reflection intensity at various positions of irradiated portions P1 to P3 in a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 1000 rpm. Fig.16 (d) to (f) are graphs showing changes in reflection intensity at various positions of irradiated portions P1 to P3 in a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 1000 rpm. Fig.16 (g) to (i) are graphs showing changes in reflection intensity at various positions of irradiation points P1 to P3 in a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 1000 ml / min and the rotation speed of the substrate W is set to 1000 rpm.

[0112] Fig.17 (a) to (c) are graphs showing changes in reflection intensity at various positions of irradiated portions P1 to P3 in a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 500 rpm. Fig.17 (d) to (f) are graphs showing changes in reflection intensity at various positions of irradiation points P1 to P3 in a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 500 rpm. Fig.17 (g) to (i) are graphs showing changes in reflection intensity at various positions of irradiation points P1 to P3 in a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 1000 ml / min and the rotation speed of the substrate W is set to 500 rpm.

[0113] Fig.18 (a) to (c) are graphs showing changes in reflection intensity at various positions of irradiation points P1 to P3 in a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 2000 ml / min and the rotation speed of the substrate W is set to 200 rpm. Fig.18(d) to (f) are graphs showing changes in reflection intensity at various positions of irradiated portions P1 to P3 in a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 1500 ml / min and the rotation speed of the substrate W is set to 200 rpm. Fig.18 (g) to (i) are graphs showing changes in reflection intensity at various positions of irradiated portions P1 to P3 in a hydrophobic substrate W and a hydrophilic substrate W when the discharge flow rate of the rinse liquid L2 is set to 1000 ml / min and the rotation speed of the substrate W is set to 200 rpm.

[0114] exist Fig.16 Under the processing conditions in , the reflection intensity shows the same change on both the hydrophobic substrate W and the hydrophilic substrate W. On the other hand, under Fig.17 and Fig.18 Under the treatment conditions, compared with Fig.16 The rotation speed of the substrate W is slow under the processing conditions, so an extremely low reflection intensity is detected on the peripheral side of the hydrophobic substrate W (refer to Fig.17 (h), (i) and Fig.18 (c), (e), (f), (h), (i)). That is, by using the optical sensor 50 to obtain the change in reflection intensity, it is possible to determine whether the processing liquid covers the surface of the substrate W. In other words, the controller Ctr can be configured to determine the coverage state of the surface of the substrate W with the processing liquid based on the reflection intensity received from the optical sensor 50. In this case, it is possible to automatically determine whether the surface of the substrate W is covered with the processing liquid without relying on the visual observation of the operator.

[0115] In addition, if Fig.16 As shown, when the flow rate of the processing liquid or the rotation speed of the substrate W is large, there is a tendency that the surface of the substrate W is appropriately covered with the processing liquid. However, generally speaking, the processing conditions of the substrate W are predetermined according to the type of substrate W, and sometimes it is not possible to set the flow rate of the processing liquid or the rotation speed of the substrate W to be large for all substrates W. In particular, when the flow rate of the processing liquid or the rotation speed of the substrate W is large, the processing liquid scatters around or the flow of the airflow near the surface of the substrate W is disturbed, which may generate particles on the surface of the substrate W. Therefore, by automatically detecting the coverage state of the processing liquid on the surface of the substrate W afterwards, the substrate W can be processed under the pre-set processing conditions as much as possible.

[0116] [Other examples]

[0117] Example 1. An example of a substrate processing device comprises: a rotating holding portion, which is configured to hold a substrate and rotate the substrate; a supply portion, which is configured to supply a processing liquid to the surface of the substrate; a first light sensor, which is configured to irradiate light toward a first irradiation portion set in a manner overlapping with the surface of the substrate held by the rotating holding portion and receive reflected light of the light; a second light sensor, which is configured to irradiate light toward a second irradiation portion set in a manner overlapping with the surface of the substrate held by the rotating holding portion and receive reflected light of the light, the second irradiation portion being located radially outward of the substrate than the first irradiation portion; and a control portion. The control unit is configured to perform the following processes: a first process, controlling the rotation holding unit to rotate the substrate; a second process, controlling the supply unit to supply the processing liquid to the surface of the rotating substrate; a third process, detecting the arrival of the processing liquid at the first irradiation position based on the change in the intensity of the reflected light acquired by the first light sensor at the first irradiation position; a fourth process, detecting the arrival of the processing liquid at the second irradiation position based on the change in the intensity of the reflected light acquired by the second light sensor at the second irradiation position; a fifth process, calculating the diffusion speed of the processing liquid on the surface of the substrate based on the time difference between the arrival time point of the processing liquid at the first irradiation position and the arrival time point of the processing liquid at the second irradiation position; and a sixth process, judging whether the processing of the substrate is appropriate based on the diffusion speed calculated by the fifth process. In this case, it is possible to grasp at what speed the processing liquid diffuses on the surface of the substrate. Here, the diffusion speed may change due to the influence of the surface state of the substrate, the state of the substrate processing device, etc. In the case of an extremely slow diffusion speed, for example, it can be judged that there is a possibility that the entire surface of the substrate is not covered by the processing liquid. On the other hand, in the case of an extremely fast diffusion rate, for example, it can be determined that there is a possibility that the substrate processing device will have a bad condition, or that the surface state of the substrate will have a bad condition. Therefore, by judging whether the processing of the substrate is appropriate based on the diffusion rate, it is possible to detect the coverage state of the processing liquid on the surface of the substrate and evaluate whether the surface state of the substrate and the state of the substrate processing device are good. In addition, compared with the case of using a camera to obtain the surface state of the substrate, the use of an optical sensor can suppress the enlargement of the device, and the amount of data processed is small, thereby simplifying the calculation process. Therefore, the detection of the coverage state of the processing liquid on the surface of the substrate and the evaluation of whether the surface state of the substrate and the state of the substrate processing device are good can be achieved at a low cost.

[0118] Example 2. Alternatively, the device of Example 1 further comprises: a storage unit configured to store corresponding information, wherein the corresponding information is information that corresponds data related to the type of substrate with an allowable range of the diffusion rate of the processing liquid on the surface of the substrate when the processing liquid is supplied to the surface of the rotating substrate having the type; and an acquisition unit configured to acquire the type of substrate, wherein the control unit is configured to further perform a seventh process, wherein the allowable range of the substrate is acquired based on the type of substrate acquired by the acquisition unit and the corresponding information stored in the storage unit, and the sixth process includes determining whether the diffusion rate calculated by the fifth process is within the allowable range acquired by the seventh process. In this case, the allowable range of the diffusion rate of the processing liquid is appropriately set according to the type of substrate. Therefore, the detection of the coverage state of the processing liquid on the surface of the substrate and the evaluation of whether the surface state of the substrate and the state of the substrate processing device are good can be performed with higher accuracy.

[0119] Example 3. Alternatively, in the device of Example 2, the allowable range includes a range that does not require adjustment and an adjustment range, the upper limit of the adjustment range is set to be greater than the upper limit of the range that does not require adjustment, and the lower limit of the adjustment range is set to be less than the lower limit of the range that does not require adjustment, and the control unit is configured as follows: when it is determined in the sixth process that the diffusion rate calculated by the fifth process is within the adjustment range, the eighth process is also performed, in which at least one of the rotation holding unit and the supply unit is controlled to change at least one of the rotation speed of the subsequent substrate and the flow rate of the processing liquid sprayed to the subsequent substrate. In this case, even if it is determined that the processing result of the substrate is good, the rotation speed of the substrate or the flow rate of the processing liquid is changed when the diffusion speed is within the adjustment range. That is, the processing conditions of the substrate are adjusted to make the processing result of the subsequent substrate better. Therefore, the substrate can be processed more appropriately.

[0120] Example 4. Alternatively, the device of any one of Examples 1 to 3 may further include an imaging unit configured to capture a situation in which the processing liquid is supplied to the surface of the substrate, and the control unit may be configured to further execute a ninth process when it is determined in the sixth process that the coverage state of the surface of the substrate is inappropriate, in which the imaging data of the substrate being processed captured by the imaging unit or the processing conditions of the substrate are stored in the storage unit together with the inappropriate judgment result. In this case, the operator can easily confirm the processing status of the substrate when the inappropriate judgment result is obtained.

[0121] Example 5. Alternatively, in the device of any one of Examples 1 to 4, the first light sensor and the second light sensor are both laser sensors, and the second to fourth processes are performed in a light-shielded space. In this case, since a laser sensor is used, the diffusion rate can be calculated even when a substrate is processed using a processing liquid whose properties may change according to light. Therefore, compared with the case of using a camera, it is possible to detect the coverage state of the processing liquid on the surface of the substrate for more types of processing liquids and evaluate whether the surface state of the substrate and the state of the substrate processing device are good.

[0122] Example 6. An example of a substrate processing method includes the following steps: a first step, while a rotating holding part holds the substrate and rotates the substrate, a supply part supplies a processing liquid to the surface of the substrate; a second step, irradiating light toward a first irradiation position of the rotating substrate through a first optical sensor, and detecting the arrival of the processing liquid at the first irradiation position based on a change in the intensity of the reflected light acquired by the first optical sensor; a third step, irradiating light toward a second irradiation position of the rotating substrate through a second optical sensor, and detecting the arrival of the processing liquid at the second irradiation position based on a change in the intensity of the reflected light acquired by the second optical sensor, wherein the second irradiation position is located radially outward of the substrate than the first irradiation position; a fourth step, calculating the diffusion speed of the processing liquid on the surface of the substrate based on the time difference between the arrival time point of the processing liquid at the first irradiation position and the arrival time point of the processing liquid at the second irradiation position; and a fifth step, judging whether the processing of the substrate is appropriate based on the diffusion speed calculated by the fourth step. In this case, the same effect as the device of Example 1 can be obtained.

[0123] Example 7. Alternatively, the method of Example 6 further includes the following steps: a sixth step of obtaining the type of substrate; and a seventh step of obtaining the permissible range of the substrate based on the corresponding information and the type of substrate obtained in the sixth step, wherein the corresponding information is information that corresponds data related to the type of substrate with the permissible range of the diffusion rate of the processing liquid on the surface of the substrate when the processing liquid is supplied to the surface of the rotating substrate having the type, and the fifth step includes determining whether the diffusion rate calculated in the fourth step is within the permissible range obtained in the seventh step. In this case, the same effect as the device of Example 2 can be obtained.

[0124] Example 8. In the method of Example 7, the allowable range may include a range that does not require adjustment and an adjustment range, the upper limit of the adjustment range is set to be greater than the upper limit of the range that does not require adjustment, and the lower limit of the adjustment range is set to be less than the lower limit of the range that does not require adjustment, and the method further includes an eighth step, when it is determined in the fifth step that the diffusion speed calculated by the fourth step is within the adjustment range, in the eighth step, at least one of the rotation speed of the subsequent substrate and the flow rate of the processing liquid sprayed to the subsequent substrate is changed. In this case, the same effect as the device of Example 3 can be obtained.

[0125] Example 9. Any of the methods of Examples 6 to 8 may further include a ninth step, wherein when it is determined in the fifth step that the covering state of the surface of the substrate is inappropriate, in the ninth step, the imaging data of the substrate being processed captured by the imaging unit or the processing conditions of the substrate are stored in the storage unit together with the inappropriate determination result. In this case, the same effect as the device of Example 4 can be obtained.

[0126] Example 10. In any of the methods of Examples 6 to 9, the first optical sensor and the second optical sensor may be laser sensors, and the first to third steps may be performed in a light-shielded space. In this case, the same effects as those of the device of Example 5 can be obtained.

[0127] Description of Reference Numerals

[0128] 1: substrate processing system (substrate processing device); 4: loading part (acquisition part); 7: carrier; 7a: storage part; 10: rotation holding part; 20, 30: supply part; 40: camera part; 50: light sensor; Ctr: controller (control part); M2: storage part; P1~P3: irradiation part; R: allowable range; Ra: range without adjustment; Rb: adjustment range; U: liquid processing unit (substrate processing device); W: substrate; Wa: upper surface (surface); Wb: lower surface (surface).

Claims

1. A substrate processing device, comprising: a rotation holding portion configured to hold a substrate and rotate the substrate; a supply unit configured to supply a processing liquid to a surface of the substrate; a first photosensor configured to irradiate light toward a first irradiation position set so as to overlap with a surface of the substrate held by the rotation holding portion and to receive reflected light of the light; a second photosensor configured to irradiate light toward a second irradiation portion set so as to overlap with the surface of the substrate held by the rotation holding portion and receive reflected light of the light, the second irradiation portion being located radially outward of the substrate relative to the first irradiation portion; and Control Department, in, The control unit is configured to execute the following processing: A first process is to control the rotation holding part to rotate the substrate; a second process of controlling the supply unit to supply the processing liquid to the surface of the rotating substrate; a third process of detecting the arrival of the treatment liquid at the first irradiation position based on a change in the intensity of the reflected light acquired by the first light sensor at the first irradiation position; a fourth process of detecting the arrival of the treatment liquid at the second irradiation position based on a change in the intensity of the reflected light acquired by the second light sensor at the second irradiation position; a fifth process of calculating a diffusion speed of the processing liquid on the surface of the substrate based on a time difference between an arrival time point of the processing liquid at the first irradiation position and an arrival time point of the processing liquid at the second irradiation position; as well as The sixth process is to determine whether the process of the substrate is appropriate based on the diffusion rate calculated in the fifth process.

2. The substrate processing apparatus according to claim 1, wherein: Also available: a storage unit configured to store correspondence information that corresponds data related to the type of the substrate and an allowable range of diffusion rate of the processing liquid on the surface of the substrate when the processing liquid is supplied to the surface of the rotating substrate having the type; as well as an acquisition unit configured to acquire the type of the substrate, The control unit is configured to further execute a seventh process in which an allowable range of the substrate is acquired based on the type of the substrate acquired by the acquisition unit and the corresponding information stored in the storage unit. The sixth process includes determining whether the diffusion speed calculated by the fifth process is within the allowable range acquired by the seventh process.

3. The substrate processing apparatus according to claim 2, wherein: The allowable range includes a range that does not require adjustment and an adjustment range. The upper limit of the adjustment range is set to be greater than the upper limit of the range that does not require adjustment, and the lower limit of the adjustment range is set to be less than the lower limit of the range that does not require adjustment. The control unit is configured to, when it is determined in the sixth process that the diffusion speed calculated by the fifth process is within the adjustment range, further execute an eighth process, in which at least one of the rotation holding unit and the supply unit is controlled to change at least one of the rotation speed of a subsequent substrate and the flow rate of the processing liquid sprayed to the subsequent substrate.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein: The apparatus further comprises an imaging unit configured to capture an image of a state in which the processing liquid is supplied to the surface of the substrate. The control unit is configured to, when it is determined in the sixth process that the covering state of the surface of the substrate is inappropriate, further execute a ninth process, in which the camera data of the substrate being processed captured by the camera unit or the processing conditions of the substrate are stored in the storage unit together with the inappropriate judgment result.

5. The substrate processing apparatus according to claim 1, wherein: The first light sensor and the second light sensor are both laser sensors, The second to fourth processes are performed in a light-shielded space.

6. A substrate processing method, comprising the following steps: In a first step, a supply unit supplies a processing liquid to a surface of the substrate while a rotation holding unit holds the substrate and rotates the substrate; a second step of irradiating light toward a first irradiation position of the rotating substrate by a first optical sensor, and detecting the arrival of the processing liquid at the first irradiation position based on a change in the intensity of the reflected light acquired by the first optical sensor; A third step of irradiating light toward a second irradiation position of the rotating substrate through a second optical sensor, and detecting the arrival of the processing liquid at the second irradiation position based on a change in the intensity of the reflected light acquired by the second optical sensor, wherein the second irradiation position is located radially outward of the substrate relative to the first irradiation position; a fourth step of calculating a diffusion speed of the processing liquid on the surface of the substrate based on a time difference between a time point when the processing liquid arrives at the first irradiation position and a time point when the processing liquid arrives at the second irradiation position; and In a fifth step, based on the diffusion rate calculated in the fourth step, it is determined whether the processing of the substrate is appropriate.

7. The substrate processing method according to claim 6, wherein: It also includes the following steps: The sixth step is to obtain the type of the substrate; as well as The seventh step is to obtain an allowable range of the substrate based on the corresponding information and the type of the substrate obtained in the sixth step. The corresponding information is information that corresponds data related to the type of the substrate with an allowable range of diffusion rate of the processing liquid on the surface of the substrate when the processing liquid is supplied to the surface of the rotating substrate having the type. The fifth step includes determining whether the diffusion rate calculated in the fourth step is within the allowable range acquired in the seventh step.

8. The substrate processing method according to claim 7, wherein: The allowable range includes a range that does not require adjustment and an adjustment range. The upper limit of the adjustment range is set to be greater than the upper limit of the range that does not require adjustment, and the lower limit of the adjustment range is set to be less than the lower limit of the range that does not require adjustment. The substrate processing method also includes an eighth step. When it is determined in the fifth step that the diffusion rate calculated by the fourth step is within the adjustment range, in the eighth step, at least one of the rotation speed of the subsequent substrate and the flow rate of the processing liquid sprayed to the subsequent substrate is changed.

9. The substrate processing method according to any one of claims 6 to 8, wherein: The method further includes a ninth step. When it is determined in the fifth step that the covering state of the surface of the substrate is inappropriate, in the ninth step, the imaging data of the substrate being processed captured by the imaging unit or the processing conditions of the substrate are stored in the storage unit together with the inappropriate judgment result.

10. The substrate processing method according to claim 6, wherein: The first light sensor and the second light sensor are both laser sensors, The first to third steps are performed in a light-shielded space.

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