Flat susceptor having mesh pattern and exhaust grooves on its surface

Abstract

A susceptor for supporting a wafer in a processing chamber, the susceptor comprising a susceptor substrate having a susceptor lug on an outer peripheral edge of a front side of the susceptor substrate, where a pocket within the susceptor lug is configured to hold a wafer to be processed in the processing chamber, and a coating deposited on the susceptor substrate, wherein a surface of the base lug is textured with a plurality of vent groove lines, a surface of the pocket portion is textured with a first pattern, and a surface of a back side of the base substrate opposite the front side is textured with a second pattern.

Description

Technical Field

[0001] Examples described herein generally relate to a susceptor to be used in semiconductor wafer processing, and more particularly to a susceptor having a grid pattern and exhaust grooves on a surface thereof to be used in an epitaxial deposition process. Background Art

[0002] The chemical vapor deposition (CVD) process is used in semiconductor wafer processing, among other processes, for epitaxially depositing thin layers (typically less than 10 microns) on a wafer. The CVD process requires heating a wafer held in a pocket in a susceptor to an elevated temperature, such as about 1200°C. The wafer is typically heated from room temperature to the elevated temperature in about 30 minutes. During such wafer processing, in a susceptor having a flat pocket, air is trapped between the wafer and the surface of the flat pocket, and the wafer slides within the pocket. Such wafer sliding can damage the pocket of the susceptor and affect the quality of epitaxial deposition on the wafer.

[0003] Therefore, there is a need for a susceptor that can mitigate sliding of the wafer thereon. Summary of the invention

[0004] Embodiments of the present disclosure include a susceptor for supporting a wafer in a processing chamber. The susceptor includes a susceptor substrate having a susceptor ledge on a peripheral edge of a front side of the susceptor substrate, wherein a pocket within the susceptor ledge is configured to hold a wafer to be processed in the processing chamber, and a coating layer deposited on the susceptor substrate, wherein a surface of the susceptor ledge is textured with a plurality of exhaust groove lines, a surface of the pocket is textured with a first pattern, and a surface of a back side of the susceptor substrate opposite to the front side is textured with a second pattern.

[0005] Embodiments of the present disclosure also include a processing chamber. The processing chamber includes: a chamber body in fluid communication with one or more gas sources, and a substrate support assembly including a susceptor, wherein the susceptor includes a susceptor substrate having a susceptor ledge on a peripheral edge of a front side of the susceptor substrate, wherein a pocket within the susceptor ledge is configured to hold a wafer to be processed in a processing chamber, and a coating deposited on the susceptor substrate, wherein a surface of the susceptor ledge is textured with a plurality of exhaust groove lines, a surface of the pocket is textured with a first pattern, and a surface of a back side of the susceptor substrate opposite the front side is textured with a second pattern.

[0006] Embodiments of the present invention further include a processing system. The processing system includes: a processing chamber, the processing chamber including a chamber body, the chamber body being in fluid communication with one or more gas sources, a substrate support assembly, the substrate support assembly including a susceptor, wherein the susceptor includes: a susceptor substrate having a susceptor ledge on a peripheral edge of a front side of the susceptor substrate, wherein a pocket within the susceptor ledge is configured to hold a wafer to be processed in the processing chamber, and a coating deposited on the susceptor substrate, wherein a surface of the susceptor ledge is textured with a plurality of exhaust groove lines, a surface of the pocket is textured with a first pattern, and a surface of a back side of the susceptor substrate opposite the front side is textured with a second pattern, and a controller configured to cause the processing system to perform an epitaxial deposition process in the processing chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The features of the present disclosure have been briefly summarized above and discussed in more detail below, and can be understood by reference to examples, some of which are illustrated in the accompanying drawings. However, it is worth noting that the accompanying drawings only illustrate some examples and should not be considered as limiting the scope of the present disclosure, as the present disclosure may allow other equally effective examples.

[0008] Figure 1 is a schematic top view of an exemplary multi-chamber processing system according to some examples of the present disclosure.

[0009] Figure 2 is a cross-sectional view of a thermal processing chamber that may be used to perform epitaxial growth according to some examples of the present disclosure.

[0010] Figure 3A and Figure 3B are a cross-sectional scanning electron microscope (SEM) image and a top view SEM image of a susceptor according to one embodiment.

[0011] Figure 4A , 4B , 4C, 4D, 4E and 4F are a cross-sectional view, a front view, an enlarged front view, an enlarged cross-sectional view, an enlarged front view and an enlarged cross-sectional view of a portion of a base according to one embodiment.

[0012] To facilitate understanding, the same reference numerals have been used, where possible, to represent the same elements in the drawings. DETAILED DESCRIPTION

[0013] In general, examples described herein relate to susceptors on which wafers are held for semiconductor wafer processing, and more particularly to susceptors having a grid pattern on a pocket, exhaust grooves on a lug on a front side, and a mirrored grid pattern on a back side for use in an epitaxial deposition process. Because the exhaust grooves are in fluid communication with the grid pattern on the front side, slippage of the wafer in the pocket is reduced, which reduces damage to the susceptor and improves the quality of epitaxial deposition on the wafer. Due to the mirrored grid pattern on the back side of the susceptor, the interface stress between the susceptor substrate and the coating is reduced during the epitaxial deposition process, which reduces warping and bowing of the susceptor and increases the flatness of the susceptor.

[0014] Figure 1 1 is a schematic top view of an exemplary multi-chamber processing system 100 according to some examples of the present disclosure. The processing system 100 generally includes a factory interface 102, load lock chambers 104, 106, transfer chambers 108, 110 with corresponding transfer robots 112, 114, holding chambers 116, 118, and processing chambers 120, 122, 124, 126, 128, 130. As described in detail herein, wafers in the processing system 100 can be processed in and transferred between various chambers without exposing the wafers to an ambient environment external to the processing system 100 (e.g., such as an atmospheric ambient environment that may exist in a wafer fab). For example, wafers can be processed in and transferred between various chambers in a low pressure (e.g., less than or equal to about 300 Torr) or vacuum environment without breaking the low pressure or vacuum environment between various processes performed on the wafers in the processing system 100. Thus, the processing system 100 may provide an integrated solution for some wafer processing.

[0015] Examples of processing systems that may be appropriately modified in accordance with the teachings provided herein include those available from Applied Materials, Inc., located in Santa Clara, California. or Integrated Processing System or Other Suitable Processing Systems It is contemplated that other processing systems, including those from other manufacturers, may be adapted to benefit from aspects described herein.

[0016] exist Figure 1In the example shown, the factory interface 102 includes a docking station 140 and a factory interface robot 142 to facilitate the transfer of wafers. The docking station 140 is configured to receive one or more front opening unit (FOUP) 144. In some examples, each factory interface robot 142 generally includes a blade 148 disposed on one end of the corresponding factory interface robot 142, and the blade 148 is configured to transfer the wafer from the factory interface 102 to the load lock chamber 104, 106.

[0017] The load lock chambers 104, 106 have respective ports 150, 152 coupled to the factory interface 102 and respective ports 154, 156 coupled to the transfer chamber 108. The transfer chamber 108 further has respective ports 158, 160 coupled to the holding chambers 116, 118 and respective ports 162, 164 coupled to the processing chambers 120, 122. Similarly, the transfer chamber 110 has respective ports 166, 168 coupled to the holding chambers 116, 118 and respective ports 170, 172, 174, 176 coupled to the processing chambers 124, 126, 128, 130. Ports 154, 156, 158, 160, 162, 164, 166, 168, 170, 172, 174, 176 may be, for example, slit valve openings having slit valves for transferring wafers therethrough by transfer robots 112, 114 and for providing seals between the chambers to prevent gas from passing between the chambers. Generally, any port is open for transferring a wafer therethrough; otherwise, the port is closed.

[0018] The load lock chambers 104, 106, the transfer chambers 108, 110, the holding chambers 116, 118, and the processing chambers 120, 122, 124, 126, 128, 130 may be fluidly coupled to a gas and pressure control system (not specifically shown). The gas and pressure control system may include one or more gas pumps (e.g., turbo pumps, cryo-pumps, roughing pumps), gas sources, various valves, and conduits fluidly coupled to the various chambers. In operation, the factory interface robot 142 transfers wafers from the FOUP 144 to the load lock chamber 104 or 106 through the port 150 or 152. The gas and pressure control system then pumps down the load lock chamber 104 or 106. The gas and pressure control system further maintains the transfer chambers 108, 110 and the holding chambers 116, 118 with an internal low pressure or vacuum environment (which may include an inert gas). Thus, pumping down of the load lock chamber 104 or 106 facilitates transferring wafers between, for example, the atmospheric environment of the factory interface 102 and the low pressure or vacuum environment of the transfer chamber 108 .

[0019] When the wafer in the load lock chamber 104 or 106 has been evacuated, the transfer robot 112 transfers the wafer from the load lock chamber 104 or 106 to the transfer chamber 108 through the port 154 or 156. The transfer robot 112 can then transfer the wafer to and between any of the processing chambers 120, 122 through the corresponding ports 162, 164 for processing, and transfer the wafer to the holding chambers 116, 118 through the corresponding ports 158, 160 for holding to await further transfer. Similarly, the transfer robot 114 is capable of accessing wafers in the holding chamber 116 or 118 through the port 166 or 168, and is capable of transferring wafers to any of the processing chambers 124, 126, 128, 130 and / or transferring wafers between any of the processing chambers 124, 126, 128, 130 for processing through the corresponding ports 170, 172, 174, 176, and transferring wafers to the holding chambers 116, 118 for holding to await further transfer through the corresponding ports 166, 168. The transfer and holding of wafers within and between the various chambers can be performed in a low pressure or vacuum environment provided by a gas and pressure control system.

[0020] The processing chambers 120, 122, 124, 126, 128, 130 may be any suitable chamber for processing wafers. In some examples, the processing chamber 122 may perform a cleaning process; the processing chamber 120 may perform an etching process; and the processing chambers 124, 126, 128, 130 may perform a corresponding epitaxial growth process. The processing chamber 122 may be a SiCoNi 1000 wafer available from Applied Materials, Inc. of Santa Clara, California. TM Preclean chamber. The processing chamber 120 may be a Selectra available from Applied Materials, Inc. of Santa Clara, California. TM Etching chamber.

[0021] The system controller 190 is coupled to the processing system 100 to control the processing system 100 or components thereof. For example, the system controller 190 may control the operation of the processing system 100 using direct control of the chambers 104, 106, 108, 116, 118, 110, 120, 122, 124, 126, 128, 130 of the processing system 100 or by controlling controllers associated with the chambers 104, 106, 108, 116, 118, 110, 120, 122, 124, 126, 128, 130. In operation, the system controller 190 enables data and feedback to be collected from the various chambers to coordinate the performance of the processing system 100.

[0022] The system controller 190 generally includes a central processing unit (CPU) 192, a memory 194, and support circuits 196. The CPU 192 may be one of any form of general purpose processor that may be used in an industrial environment. The memory 194 or non-transitory computer readable medium may be accessed by the CPU 192 and may be one or more memories, such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other digital unit format, local or remote. The support circuits 196 are coupled to the CPU 192 and may include caches, clock circuits, input / output subsystems, power supplies, and the like. The various methods disclosed herein may generally be implemented under the control of the CPU 192 by the CPU 192 executing computer instruction codes stored in the memory 194 (or in the memory of a particular processing chamber) (e.g., as software routines). When the computer instruction codes are executed by the CPU 192, the CPU 192 controls the chamber to perform processes according to the various methods.

[0023] Other processing systems may employ other configurations. For example, more or fewer processing chambers may be coupled to the transfer device. In the example shown, the transfer device includes transfer chambers 108, 110 and holding chambers 116, 118. In other examples, more or fewer transfer chambers (such as one transfer chamber) and / or more or fewer holding chambers (such as no holding chamber) may be implemented as a transfer device in a processing system.

[0024] Figure 2 is a cross-sectional view of a processing chamber 200 that can be used to perform epitaxial growth. The processing chamber 200 can be from Figure 1 Any of the process chambers 120, 122, 124, 126, 128, 130 in the embodiment of the present invention. Non-limiting examples of suitable process chambers that can be modified according to the embodiments disclosed herein can include RP EPI reactors, Elvis chambers, and Lennon chambers, all of which are commercially available from Applied Materials, Inc. in Santa Clara, California. The process chamber 200 can be added to the Applied Materials, Inc. in Santa Clara, California. Integrated Processing System. Although processing chamber 200 is described below as being used to practice various embodiments described herein, other semiconductor processing chambers from different manufacturers may also be used to practice the embodiments described in this disclosure.

[0025] The processing chamber 200 includes a chamber body 202, a support system 204, and a controller 206. The chamber body 202 includes an upper portion 208 and a lower portion 210. The upper portion 208 includes an area within the chamber body 202 between an upper dome 212 and the wafer W. The lower portion 210 includes an area within the chamber body 202 between a lower dome 214 and the bottom of the wafer W. Deposition processes generally occur on an upper surface of the wafer W within the upper portion 208.

[0026] The support system 204 includes components for performing and monitoring a predetermined process, such as growth of an epitaxial layer or film in the process chamber 200. The controller 206 is coupled to the support system 204 and is adapted to control the process chamber 200 and the support system 204. The controller 206 may be the system controller 190 or a controller controlled by the system controller 190 for controlling the process within the process chamber 200.

[0027] The processing chamber 200 includes a plurality of heat sources, such as lamps 216, adapted to provide heat energy to components located within the processing chamber 200. For example, the lamps 216 may be adapted to provide heat energy to the wafer W, the susceptor 218, and / or the preheat ring 220. The lower dome 214 may be formed of an optically transparent material, such as quartz, to facilitate the passage of thermal radiation. It is contemplated that the lamps 216 may be positioned to provide heat energy through the upper dome 212 as well as the lower dome 214.

[0028] The chamber body 202 includes a plurality of plenums formed therein. The plenums are in fluid communication with one or more gas sources 222 (e.g., carrier gas) and one or more precursor sources 224 (e.g., deposition gas and dopant gas). For example, a first plenum 226 may be adapted to provide a deposition gas 228 that enters the upper portion 208 of the chamber body 202 therethrough, while a second plenum 230 may be adapted to exhaust the deposition gas 228 from the upper portion 208. In this manner, the deposition gas 228 may flow parallel to the upper surface of the wafer W.

[0029] In the case of using a liquid precursor, the processing chamber 200 may include a liquid vaporizer 232 in fluid communication with a liquid precursor source 234. The liquid vaporizer 232 is used to evaporate the liquid precursor to be delivered to the processing chamber 200. Although not shown, it is contemplated that the liquid precursor source 234 may include, for example, one or more ampoules of precursor liquid and solvent liquid, a shutoff valve, and a liquid flow meter (LFM).

[0030] A substrate support assembly 236 is located in the lower portion 210 of the chamber body 202. The substrate support assembly 236 is illustrated as supporting a wafer W in a processing position. The substrate support assembly 236 includes a pedestal support shaft 238 formed of an optically transparent material and a pedestal 218 supported by the pedestal support shaft 238. A shaft 240 of the pedestal support shaft 238 is positioned within a shield 242 to which a lift pin contact 244 is coupled. The pedestal support shaft 238 is rotatable to facilitate rotation of the wafer W during processing. An actuator 246 coupled to the pedestal support shaft 238 facilitates rotation of the pedestal support shaft 238. The shield 242 is typically fixed in place and therefore does not rotate during processing. Support pins 248 couple the pedestal support shaft 238 to the pedestal 218.

[0031] The lift pins 250 are disposed through openings (not labeled) formed in the susceptor support shaft 238. The lift pins 250 are vertically actuatable and adapted to contact the underside of the substrate W to lift the substrate W from a processing position (as shown) to a substrate removal position.

[0032] The preheat ring 220 is detachably disposed on a lower liner 252 coupled to the chamber body 202. The preheat ring 220 is disposed around the interior space of the chamber body 202 and circumscribes the substrate W when the substrate W is in the processing position. The preheat ring 220 facilitates preheating of the process gas as the process gas enters the chamber body 202 through a first gas chamber 226 adjacent to the preheat ring 220.

[0033] The central window portion 254 of the upper dome 212 and the bottom portion 256 of the lower dome 214 can be formed of an optically transparent material such as quartz. The peripheral flange 258 of the upper dome 212 and the peripheral flange 260 of the lower dome 214 can all be formed of opaque quartz to protect the O-ring 262 near the peripheral flange from direct exposure to thermal radiation. The peripheral flange 258 of the upper dome 212 engages the central window portion 254 around the periphery of the central window portion 254, and the peripheral flange 260 of the lower dome 214 engages the bottom portion 256 around the periphery of the bottom portion 256. The peripheral flange 258 can be formed of an optically transparent material such as quartz.

[0034] Figure 3A and Figure 3B 2 is a cross-sectional scanning electron microscope (SEM) image and a top view SEM image of a susceptor 300 according to one embodiment. The susceptor 300 may be disposed on a Figure 2The susceptor 218 in the processing chamber 200 of the embodiment of the present invention is shown. The susceptor 300 includes a susceptor substrate 302 and a coating 304. The susceptor substrate 302 is formed of graphite. The coating 304 is formed of silicon carbide (SiC). The graphite susceptor substrate 302 may be porous having pores 306 in which silicon carbide (SiC) tendrils are formed. This formation of silicon carbide (SiC) provides improved mechanical properties in the susceptor 300.

[0035] Figure 4A is a schematic cross-sectional view of a portion of a susceptor 400 according to an embodiment described herein. Figure 4B , 4C 4D, 4E and 4F are a front view, an enlarged front view, an enlarged cross-sectional view, an enlarged front view and an enlarged cross-sectional view of the base 400. The base 400 may be arranged at a position from Figure 2 The susceptor 218 in the processing chamber 200 is shown in FIG.

[0036] The susceptor 400 includes a susceptor substrate 402 coated with a coating 404. The susceptor substrate 402 may be formed of graphite having at least 99% purity and prepared by sawing any suitable graphite billet into a disk-shaped plate and grinding the surface of the disk-shaped plate. The susceptor substrate 402 may have a diameter between about 150 mm and about 400 mm, for example, about 370 mm, and a thickness between about 1 mm and about 15 mm, for example, about 3.70 mm. The coating 404 may be formed of silicon carbide (SiC) and formed on the susceptor substrate 402 by conformally depositing silicon carbide (SiC) on the susceptor substrate 402 using an organosilicon precursor by a CVD process. The coating 404 may have a thickness between about 40 μm and about 300 μm, such as about 80 μm.

[0037] The susceptor 400 includes a pocket 406 to hold a wafer (not shown) within a susceptor ledge 408 on the peripheral edge of the front side 410 of the susceptor 400. The pocket 406 may be formed by surface treatment, such as precision machining of the surface of the susceptor substrate 402 using conventional methods known in the art to apply a specific surface structure. The pocket 406 may be a cylindrical recess having a depth between about 0.30 mm and about 1.00 mm, such as about 0.40 mm. The diameter of the pocket 406 may be between about 2 mm and 5 mm larger than the diameter of the wafer, such as between about 302 mm and about 305 mm to hold a 300 mm wafer. This margin around the wafer may prevent damage to the wafer when the wafer is loaded into the pocket 406. The pocket 406 may be designed to hold wafers having a diameter of 2, 4, 6, 8, or 12 inches. The base lug 408 may have a width between about 15 mm and about 70 mm, such as about 35 mm.

[0038] By precision machining, the surface 414 of the pocket 406 on the front side 410 is textured with a grid pattern 416 of intersecting grid groove lines, such as Figure 4C and 4E Each of the grid groove lines of the grid pattern 416 may have a depth between about 0.10 mm and about 1.30 mm (e.g., between about 0.15 mm and 0.45 mm) from the surface 414 of the pocket 406, a width between about 0.20 mm and about 3.00 mm (e.g., about 0.43 mm), and a pitch between about 0.80 mm and about 3.00 mm (e.g., about 1.14 mm).

[0039] The surface 418 of the base lug 408 on the front side 410 is textured with exhaust groove lines 420, which extend radially from the inner peripheral edge 422 of the base lug 408 toward the outer peripheral edge 424, with equal angles between adjacent exhaust groove lines 420. Each exhaust groove line 420 is aligned with and fluidly connected to one grid groove line of the grid pattern 416 at the inner peripheral edge 422 of the base lug 408. Each exhaust groove line 420 has a cross-section that is the same or similar to the grid groove lines of the grid pattern 416, for example, having a depth between about 0.30 mm and about 1.30 mm (such as about 0.65 mm and 0.75 mm), and a width between about 0.20 mm and about 3.00 mm (such as about 0.43 mm). The number of exhaust groove lines 420 can be between 3 and 360 (i.e., the angle between adjacent exhaust groove rows 420 can be between 1° and 120°). When a wafer is held on the susceptor 400 having the exhaust groove lines 420 thereon during an epitaxial deposition process, air between the wafer and the pocket 406 is exhausted through the exhaust groove lines 420 and the grid groove lines of the grid pattern 416, and thus the wafer may be located at the center of the pocket 406. Therefore, epitaxial uniformity on the wafer may be improved and damage to the susceptor 400 caused by sliding of the wafer on the susceptor 400 may be reduced.

[0040] In some embodiments, the exhaust groove line 420 extends the entire radial distance between the inner peripheral edge 422 and the outer peripheral edge 424, such as Figure 4C In some other embodiments, the exhaust groove line 420 extends a portion of the radial distance from the inner peripheral edge 422 toward the outer peripheral edge 424, such as Figure 4E The cross-sectional shape of each exhaust groove line 420 can be V-shaped, such as Figure 4C As shown, or a combination of a rectangular shape close to surface 418 and a V-shape below the rectangle, as shown Figure 4F Each exhaust groove line 420 may have a U-shaped cross section, a square cross section, or a cylindrical cross section (not shown).

[0041] The surface 426 of the back side 412 is machined to be a flat and planar surface and is textured with a pattern. An example of a pattern is a grid pattern that matches the grid pattern 416 of the surface 414 of the pocket 406 applied to the front side 410. The grid pattern 416 may have intersecting grid groove lines, each grid groove line having a depth between about 0.10 mm and about 2.60 mm (such as about 0.85 mm to about 1.15 mm) from the surface 426 of the back side 412, a width between about 0.20 mm and about 3.00 mm (such as about 0.43 mm), and a pitch between about 0.80 mm and about 3.00 mm (such as about 1.14 mm). The grid pattern 416 applied to the surface 426 of the back side 412, which is the same as the surface 414 of the pocket 406, can reduce warping and bending of the base.

[0042] Embodiments described herein provide a susceptor for holding a wafer thereon during an epitaxial deposition process, the susceptor having a textured pocket and lug with exhaust grooves on the front side and a textured back side. Exhaust grooves in fluid communication with the grid groove lines reduce air capture under the wafer and help center the wafer in the center of the susceptor. In this way, slippage of the wafer in the pocket of the susceptor and thus damage to the susceptor can be reduced. The grid pattern of the mirror applied to the back side of the susceptor reduces the interface stress between the susceptor substrate and the coating during the epitaxial deposition process, thereby reducing warping and bending of the susceptor and increasing the flatness of the susceptor.

[0043] While the foregoing is directed to particular embodiments, other and further embodiments may be devised without departing from the basic scope of the present disclosure and the scope thereof as defined by the following claims.

Claims

1. A susceptor for supporting a wafer in a processing chamber, the susceptor comprising: a susceptor substrate having a susceptor boss on a peripheral edge of a front side of the susceptor substrate, wherein a pocket within the susceptor boss is configured to hold a wafer to be processed in a processing chamber; and a coating deposited on the base substrate, wherein The surface of the base lug is textured with a plurality of venting groove lines, The surface of the pocket is textured to have a first pattern, and A surface of a back side of the base substrate opposite the front side is textured with a second pattern.

2. The susceptor of claim 1, wherein the first pattern is a first grid pattern of cross-grid groove lines.

3. The susceptor of claim 2, wherein each grid groove line of the first grid pattern has a depth between 0.10 mm and 1.30 mm from the surface of the pocket, a width between 0.20 mm and 3.00 mm, and a pitch between 0.80 mm and 3.00 mm.

4. A base as described in claim 2, wherein each of the plurality of exhaust groove lines radially extends from the inner peripheral edge of the base lug toward the outer peripheral edge, and each of the plurality of exhaust groove lines is fluidically connected to one grid groove line of the first grid pattern at the inner peripheral edge of the base lug.

5. The susceptor of claim 4, wherein each of the plurality of vent groove lines has a depth between 0.30 mm and 1.30 mm and a width between 0.20 mm and 3.00 mm.

6. The susceptor of claim 2, wherein the second pattern is a second grid pattern of intersecting grid groove lines.

7. The susceptor of claim 6, wherein each grid groove line of the second grid pattern has a depth between 0.10 mm and 2.60 mm from the surface of the back side, a width between 0.20 mm and 3.00 mm, and a pitch between 0.80 mm and 3.00 mm.

8. The susceptor of claim 1, wherein the susceptor substrate is a disk-shaped plate having a thickness between 1 mm and 15 mm.

9. The susceptor of claim 1, wherein the pocket is a cylindrical recess having a diameter between 302 mm and 305 mm, and a depth between 0.30 mm and 1.00 mm.

10. The base of claim 1, wherein The base substrate comprises graphite, and The coating includes silicon carbide (SiC).

11. A processing chamber comprising: a chamber body in fluid communication with one or more gas sources; and A substrate support assembly comprising a pedestal, wherein the pedestal comprises: a susceptor substrate having a susceptor boss on a peripheral edge of a front side of the susceptor substrate, wherein a pocket within the susceptor boss is configured to hold a wafer to be processed in the processing chamber; and a coating deposited on the base substrate, wherein The surface of the base lug is textured with a plurality of exhaust groove lines, The surface of the pocket is textured to have a first pattern, and A surface of a back side of the base substrate opposite the front side is textured with a second pattern.

12. The processing chamber of claim 11, wherein The first pattern is a first grid pattern of intersecting grid groove lines, and Each grid groove line of the first grid pattern has a depth between 0.10 mm and 1.30 mm from the surface of the pocket, a width between 0.20 mm and 3.00 mm, and a pitch between 0.80 mm and 3.00 mm.

13. The processing chamber of claim 12, wherein Each of the plurality of exhaust groove lines radially extends from an inner peripheral edge toward an outer peripheral edge of the base lug, and each of the plurality of exhaust groove lines is in fluid communication with one grid groove line of the first grid pattern at the inner peripheral edge of the base lug, and Each of the plurality of vent groove lines has a depth between 0.30 mm and 1.30 mm and a width between 0.20 mm and 3.00 mm.

14. The processing chamber of claim 12, wherein The second pattern is a second grid pattern of intersecting grid groove lines, and Each grid groove line of the second grid pattern has a depth between 0.10 mm and 2.60 mm from the surface of the back side, a width between 0.20 mm and 3.00 mm, and a pitch between 0.80 mm and 3.00 mm.

15. The processing chamber of claim 11, wherein The base substrate is a disc-shaped plate having a thickness between 1 mm and 15 mm, and The pocket is a cylindrical recess having a diameter between 302 mm and 305 mm, and a depth between 0.30 mm and 1.00 mm.

16. The processing chamber of claim 11, wherein The base substrate comprises graphite, and The coating includes silicon carbide (SiC).

17. A processing system comprising: A processing chamber, the processing chamber comprising: a chamber body in fluid communication with one or more gas sources; A substrate support assembly comprising a pedestal, wherein the pedestal comprises: a susceptor substrate having a susceptor boss on a peripheral edge of a front side of the susceptor substrate, wherein a pocket within the susceptor boss is configured to hold a wafer to be processed in the processing chamber; and a coating deposited on the base substrate, wherein The surface of the base lug is textured with a plurality of exhaust groove lines, The surface of the pocket is textured to have a first pattern, and A surface of the back side of the base substrate opposite to the front side is textured with a second pattern; and A controller is configured to cause the processing system to perform an epitaxial deposition process in the processing chamber.

18. The processing chamber of claim 17, wherein The first pattern is a first grid pattern of intersecting grid groove lines, Each grid groove line of the first grid pattern has a depth between 0.10 mm and 1.30 mm from the surface of the pocket, a width between 0.20 mm and 3.00 mm, and a pitch between 0.80 mm and 3.00 mm, Each of the plurality of exhaust groove lines radially extends from an inner peripheral edge toward an outer peripheral edge of the base lug, and each of the plurality of exhaust groove lines is in fluid communication with one grid groove line of the first grid pattern at the inner peripheral edge of the base lug, Each of the plurality of exhaust groove lines has a depth between 0.30 mm and 1.30 mm and a width between 0.20 mm and 3.00 mm, The second pattern is a second grid pattern of intersecting grid groove lines, and Each grid groove line of the second grid pattern has a depth between 0.10 mm and 2.60 mm from the surface of the back side, a width between 0.20 mm and 3.00 mm, and a pitch between 0.80 mm and 3.00 mm.

19. The processing chamber of claim 17, wherein The base substrate is a disc-shaped plate having a thickness between 1 mm and 15 mm, and The pocket is a cylindrical recess having a diameter between 302 mm and 305 mm, and a depth between 0.30 mm and 1.00 mm.

20. The processing chamber of claim 17, wherein The base substrate comprises graphite, and The coating includes silicon carbide (SiC).

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