Silicon carbide wafer outer ring end surface cleaning device and use method thereof

Abstract

The present invention belongs to the technical field of semiconductor devices, and specifically relates to equipment for processing semiconductors, and in particular to a device for cleaning the outer ring end face of a silicon carbide wafer and a method for using the same; the present invention provides a device for cleaning the outer ring end face of a silicon carbide wafer, comprising: a support table; a cleaning mechanism, which is slidably arranged on the support table, and the cleaning mechanism is suitable for abutting against the outer ring end face of the wafer; a liquid supply pipe, which is arranged at the upper end of the support table and is suitable for conveying cleaning liquid to the surface of the cleaning mechanism; wherein, after the liquid supply pipe conveys the cleaning liquid to the upper surface of the support table, the cleaning mechanism slides radially along the surface of the support table to speed up the time for the cleaning mechanism to be soaked; when the wafer approaches the cleaning mechanism in an inclined state, the cleaning mechanism is squeezed and deformed to increase the contact area between the cleaning mechanism and the wafer; after cleaning, the cleaning mechanism slides radially relative to the support table to scrape off the cleaning liquid remaining on the surface of the support table.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and specifically relates to equipment for processing semiconductors, and in particular to a device for cleaning the outer ring end surface of a silicon carbide wafer and a method for using the device. Background Art

[0002] In the application of silicon carbide wafer surface treatment technology, the outer end face of the wafer is rough and loose after chamfering, and the subsequent wafer surface treatment process is prone to end face slag, resulting in surface scratches or breakage.

[0003] The outer ring end face of the chip is rough after chamfering, and residual substances are easy to remain in the damaged layer. If the outer ring end face is not cleaned thoroughly, the subsequent epitaxial deposition and other heat treatments will be affected by the high temperature environment and easily cause harmful substances on the outer ring end face to diffuse to the front surface of the chip, resulting in epitaxial growth defects.

[0004] Therefore, how to solve the problem of incomplete cleaning of the outer ring end surface of the wafer is a technical problem that urgently needs to be solved in this field.

[0005] It should be noted that the above information disclosed in this background technology section is only used to understand the background technology of the present application concept, and therefore, the above description is not considered to constitute information of the prior art. Summary of the invention

[0006] The disclosed embodiments at least provide a silicon carbide wafer outer ring end surface cleaning device and a working method thereof.

[0007] In a first aspect, an embodiment of the present disclosure provides a device for cleaning an outer ring end surface of a silicon carbide wafer, comprising:

[0008] Support table;

[0009] A cleaning mechanism, which is slidably disposed on the support platform;

[0010] Liquid supply pipe;

[0011] Wherein, after the liquid supply pipe delivers the cleaning liquid to the upper surface of the support platform, the cleaning mechanism slides radially along the surface of the support platform to speed up the time for the cleaning mechanism to be soaked;

[0012] When the wafer approaches the cleaning mechanism in an inclined state, the cleaning mechanism is squeezed and deformed to increase the contact area between the cleaning mechanism and the wafer;

[0013] The cleaning mechanism rotates relative to the wafer to clean the outer end surface of the wafer;

[0014] After cleaning is completed, the cleaning mechanism slides radially relative to the support table to scrape off the cleaning liquid remaining on the surface of the support table.

[0015] In an optional embodiment, the support platform is provided with a sliding groove in a radial direction, and the cross section of the sliding groove is "T"-shaped;

[0016] The two ends of the sliding groove are respectively provided with a limiting groove and a receiving groove, the limiting groove is arranged at the outer edge of the sliding groove close to the support platform, and the inner diameter of the receiving groove is larger than the limiting groove;

[0017] The cleaning mechanism moves along the length direction of the sliding groove, and the bottom wall of the cleaning mechanism abuts against the upper surface of the support platform to clean the support platform.

[0018] In an optional embodiment, the cleaning mechanism includes: a limit ring, which is slidably disposed on the upper end of the support platform, and the bottom wall of which abuts against the upper surface of the support platform;

[0019] An adjusting member, which is lifted and lowered on the limiting ring and is suitable for sliding in the sliding groove;

[0020] A cleaning cloth, which is arranged on the inner ring of the limiting ring and is suitable for contacting with the wafer;

[0021] After the limiting ring contacts the support platform, the adjusting member moves downward and is inserted into the limiting groove, and the adjusting member is rotated circumferentially to limit the limiting ring;

[0022] The adjusting member moves in the sliding groove to drive the limiting ring to slide radially relative to the supporting platform;

[0023] The wafer is in contact with the cleaning cloth in an inclined state to push the cleaning cloth to deform until the bottom wall of the cleaning cloth contacts the upper surface of the support platform.

[0024] In an optional embodiment, the adjusting member includes: a lifting column, which is lifted and lowered on the limiting ring;

[0025] The limit block is arranged at the bottom of the lifting column and is perpendicular to the lifting column. The length of the limit block is greater than the diameter of the lifting column, and the limit block is suitable for being inserted into the limit groove.

[0026] In an optional embodiment, a positioning hole is formed at one end of the support platform away from the limiting groove;

[0027] A positioning column is lifted and lowered on the limiting ring, and the positioning column is suitable for being inserted into the positioning hole.

[0028] In an optional embodiment, the adjusting member is elastic;

[0029] A gap is provided between the bottom wall of the cleaning cloth and the upper surface of the support platform;

[0030] When the wafer is in an inclined state and contacts the cleaning cloth, the wafer squeezes the cleaning cloth to bend and deform downward.

[0031] In an optional embodiment, the bottom wall of the limiting ring is symmetrically provided with counterweight blocks, and the center lines of the two counterweight blocks are perpendicular to the sliding groove;

[0032] The upper surface of the support platform is symmetrically provided with adjustment grooves adapted to the counterweight block, and the counterweight block is suitable for sliding in the adjustment grooves.

[0033] In a second aspect, the present disclosure also provides an end surface cleaning device, comprising:

[0034] Support table;

[0035] A cleaning mechanism, which is slidably disposed on the support platform, and the cleaning mechanism is suitable for abutting against the outer ring end surface of the wafer;

[0036] The cleaning mechanism comprises: a limit ring, which is slidably arranged on the upper end of the support platform, and the bottom wall of which abuts against the upper surface of the support platform;

[0037] An adjusting member, which is lifted and lowered on the limiting ring and is suitable for sliding on the supporting platform;

[0038] A cleaning cloth, which is arranged on the inner ring of the limiting ring and is suitable for contacting with the wafer;

[0039] After the limiting ring contacts the support platform, the adjusting member moves downward and is inserted into the support platform, and the adjusting member is rotated circumferentially to limit the limiting ring.

[0040] In an optional embodiment, the support platform is provided with a sliding groove in a radial direction, and the cross section of the sliding groove is "T"-shaped;

[0041] A limiting groove and a receiving groove are respectively provided at both ends of the sliding groove. The limiting groove is arranged at the outer edge of the sliding groove close to the supporting platform. The inner diameter of the receiving groove is larger than that of the limiting groove.

[0042] In an optional embodiment, the adjusting member includes: a lifting column, which is lifted and lowered on the limiting ring;

[0043] The limit block is arranged at the bottom of the lifting column and is perpendicular to the lifting column. The length of the limit block is greater than the diameter of the lifting column, and the limit block is suitable for being inserted into the limit groove.

[0044] In an optional embodiment, a positioning hole is formed at one end of the support platform away from the limiting groove;

[0045] A positioning column is provided on the limit ring for lifting and lowering, and the positioning column is suitable for being inserted into the positioning hole;

[0046] The limiting ring is elastic;

[0047] A gap is provided between the bottom wall of the cleaning cloth and the upper surface of the supporting platform. When the wafer abuts against the cleaning cloth in an inclined state, the cleaning cloth is adapted to bend and deform downward.

[0048] In a third aspect, the present disclosure also provides a method for using a cleaning device, including:

[0049] After the liquid supply pipe delivers the cleaning liquid to the upper surface of the support platform, the cleaning mechanism slides radially along the surface of the support platform to speed up the time for the cleaning mechanism to be soaked;

[0050] When the wafer approaches the cleaning mechanism in an inclined state, the cleaning mechanism is squeezed and deformed to increase the contact area between the cleaning mechanism and the wafer;

[0051] After cleaning is completed, the cleaning mechanism slides radially relative to the support table to scrape off the cleaning liquid remaining on the surface of the support table.

[0052] The beneficial effect of the present invention is that a cleaning device for the outer ring end face of a silicon carbide wafer and a method of using the same, through the cooperation of a cleaning mechanism and a support table, before cleaning the wafer, a cleaning liquid is transported to the upper surface of the support table, and the cleaning mechanism slides along the surface of the support table so that the cleaning liquid wets the cleaning mechanism, thereby accelerating the time for the cleaning mechanism to be soaked. During the cleaning process of the wafer, the inclined wafer squeezes the cleaning cloth to bend and deform, thereby increasing the contact area between the cleaning cloth and the end face of the wafer, and improving the cleaning effect of the end face of the wafer. After the wafer is cleaned, the cleaning mechanism slides horizontally along the upper surface of the support table, and the cleaning mechanism is suitable for scraping off the residual cleaning liquid on the upper surface of the support table.

[0053] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention are realized and obtained by the structures particularly pointed out in the description, claims and drawings.

[0054] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, this article specifically cites preferred embodiments and provides detailed descriptions as follows in conjunction with the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0056] Figure 1 A front view of a silicon carbide wafer outer ring end surface cleaning device provided by an embodiment of the present disclosure;

[0057] Figure 2 A front view of a silicon carbide wafer outer ring end surface cleaning device provided by an embodiment of the present disclosure;

[0058] Figure 3 A schematic diagram of the unfolded state of the support platform and the cleaning mechanism provided in the embodiment of the present disclosure;

[0059] Figure 4 A three-dimensional diagram of a support platform provided for an embodiment of the present disclosure;

[0060] Figure 5 A three-dimensional diagram of a cleaning mechanism provided in an embodiment of the present disclosure;

[0061] Figure 6 A schematic diagram of a radial sliding state of a limit ring relative to a support platform provided in an embodiment of the present disclosure;

[0062] Figure 7 A schematic diagram of the deformation state of the wafer extrusion cleaning cloth provided in an embodiment of the present disclosure.

[0063] In the figure:

[0064] 1. Support platform; 10. Sliding slot; 11. Limiting slot; 12. Accommodating slot; 13. Positioning hole; 14. Adjusting slot;

[0065] 2. Cleaning mechanism; 21. Limiting ring; 22. Adjusting piece; 23. Cleaning cloth; 24. Lifting column; 25. Limiting block; 26. Positioning column; 27. Counterweight;

[0066] 3. Liquid supply pipe;

[0067] 4. Chip. DETAILED DESCRIPTION

[0068] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0069] In this article, when it is mentioned that the first component is located on the second component, this may mean that the first component may be directly formed on the second component, or the third component may be interposed between the first component and the second component. In addition, in the drawings, in order to effectively describe the technical content, the thickness of the components may be exaggerated or reduced.

[0070] Herein, example embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. As used herein, expressions such as "at least one of..." modify the entire list of elements when following a list of elements, rather than modifying individual elements in the list. For example, the expression "at least one of a, b, and c" should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0071] The terms used herein are only used to describe specific exemplary configurations and are not intended to be limited. As used herein, the singular articles "one", "an" and "the" may also be intended to include plural forms, unless it is clearly indicated above that this is not the case. The terms "comprise", "include" and "have" are inclusive, and therefore specify the presence of features, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, elements, components and / or combinations thereof. The method steps, processes and operations described herein should not be interpreted as necessarily requiring them to be performed in the specific order discussed or shown, unless specifically identified as an execution order. Additional or alternative steps may be adopted.

[0072] As used herein, the phrases "in one embodiment," "according to one embodiment," "in some embodiments," and the like generally refer to the fact that the particular feature, structure, or characteristic following the phrase may be included in at least one embodiment of the present disclosure. Therefore, a particular feature, structure, or characteristic may be included in more than one embodiment of the present disclosure, so that these phrases do not necessarily refer to the same embodiment. As used herein, the terms "example," "exemplary," and the like are used to "serve as an example, instance, or illustration." Any implementation, aspect, or design described herein as "example" or "exemplary" is not necessarily to be construed as preferred or superior to other implementations, aspects, or designs. On the contrary, the use of the terms "example," "exemplary," and the like is intended to present concepts in a concrete manner.

[0073] Research has found that the shortcomings of the existing technology are: in the application of silicon carbide wafer surface treatment technology, the outer ring end face of the wafer is rough and loose after chamfering, and the subsequent wafer surface treatment process is prone to end face slag, resulting in surface scratches or breakage.

[0074] The outer ring end face of the chip is rough after chamfering, and residual substances are easy to remain in the damaged layer. If the outer ring end face is not cleaned thoroughly, the subsequent epitaxial deposition and other heat treatments will be affected by the high temperature environment and easily cause harmful substances on the outer ring end face to diffuse to the front surface of the chip, resulting in epitaxial growth defects.

[0075] Therefore, how to solve the problem of incomplete cleaning of the outer ring end surface of the wafer is a technical problem that urgently needs to be solved in this field.

[0076] The defects existing in the above solutions are the results obtained by the inventor after practice and careful research. Therefore, the discovery process of the above problems and the solutions proposed by the present invention in this article for the above problems should be the contributions made by the inventor to the present invention during the disclosure process.

[0077] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0078] Some embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0079] like Figures 1 to 7As shown, some embodiments provide a cleaning device for the outer end surface of a silicon carbide wafer 4, comprising: a support table 1; the support table 1 is suitable for rotating relative to the wafer 4. A cleaning mechanism 2 is slidably arranged on the support table 1, and the cleaning mechanism 2 is suitable for abutting against the outer end surface of the wafer 4; a liquid supply pipe 3 is arranged at the upper end of the support table 1, and is suitable for conveying a cleaning liquid to the surface of the cleaning mechanism 2; the cleaning liquid conveyed by the liquid supply pipe 3 is a silicon oxide polishing liquid, and when it remains on the support table 1 for a long time, the substance in the cleaning liquid will appear in a crystal state, and the crystallization will affect the cleaning of the wafer. Among them, after the liquid supply pipe 3 delivers the cleaning liquid to the upper surface of the support table 1, the cleaning mechanism 2 slides radially along the surface of the support table 1 to speed up the time for the cleaning mechanism 2 to be soaked; when the chip 4 approaches the cleaning mechanism 2 in an inclined state, the cleaning mechanism 2 is squeezed and deformed to increase the contact area between the cleaning mechanism 2 and the chip 4; when cleaning the outer ring end face of the chip 4, the support table 1 drives the cleaning cloth 23 to rotate, and rotates at a speed of 6 revolutions per minute (recorded as 6rpm), the inclination angle of the chip 4 is 50°, and the cleaning liquid delivered by the liquid supply pipe 3 is an alkaline suspension of silicon dioxide. Through the above-mentioned mechanochemical cleaning process, the damaged layer of the outer ring end face of the chip 4 can be effectively removed, and a smooth outer ring end face can be obtained. The cleaning mechanism 2 rotates relative to the chip 4 to clean the outer ring end face of the chip 4; at the same time, the chip 4 rotates relative to the cleaning mechanism 2 to speed up the cleaning efficiency of the chip 4. After the cleaning is completed, the cleaning mechanism 2 slides radially relative to the support table 1 to scrape off the residual cleaning liquid on the surface of the support table 1. Through the cooperation between the cleaning mechanism 2 and the support platform 1, before cleaning the wafer 4, the cleaning liquid is transported to the upper surface of the support platform 1, and the cleaning mechanism 2 slides along the surface of the support platform 1 so that the cleaning liquid wets the cleaning mechanism 2, thereby accelerating the time for the cleaning mechanism 2 to be soaked. During the cleaning process of the wafer 4, the inclined wafer 4 squeezes the cleaning cloth 23 to bend and deform, thereby increasing the contact area between the cleaning cloth 23 and the end face of the wafer 4, and improving the cleaning effect of the end face of the wafer 4. After the cleaning of the wafer 4 is completed, the cleaning mechanism 2 slides horizontally along the upper surface of the support platform 1, and the cleaning mechanism 2 is suitable for scraping off the residual cleaning liquid on the upper surface of the support platform 1.

[0080] Reference Figure 4The support platform 1 is provided with a sliding groove 10 in the radial direction, and the cross section of the sliding groove 10 is "T"-shaped; the slot length of the sliding groove 10 is greater than the radius of the support platform 1. The two ends of the sliding groove 10 are provided with a limiting groove 11 and a receiving groove 12 respectively, and the limiting groove 11 is adapted to the adjusting member 22. When the adjusting member 22 is inserted into the limiting groove 11 and rotated, the adjusting member 22 cannot continue to move horizontally in the sliding groove 10. The inner diameter of the receiving groove 12 is greater than the outer diameter of the adjusting member 22, that is, when the adjusting member 22 moves from the sliding groove 10 to the receiving groove 12, the adjusting member 22 is suitable for detaching from the receiving groove 12. The limiting groove 11 is arranged at the outer edge of the sliding groove 10 close to the support platform 1, and the inner diameter of the receiving groove 12 is greater than the limiting groove 11. Among them, the cleaning mechanism 2 moves along the length direction of the sliding groove 10, and the bottom wall of the cleaning mechanism 2 abuts against the upper surface of the support platform 1 to clean the support platform 1.

[0081] Reference Figure 5 , the cleaning mechanism 2 includes: a limit ring 21, which is slidably arranged on the upper end of the support platform 1, and the bottom wall is in contact with the upper surface of the support platform 1; the outer diameter of the limit ring 21 is not greater than the outer diameter of the support platform 1. When the limit ring 21 moves horizontally, it is suitable for scraping off the cleaning liquid remaining on the surface of the cleaning support platform 1 to prevent the cleaning liquid from crystallizing on the surface of the support platform 1. An adjusting member 22 is arranged on the limit ring 21 for lifting and lowering, and is suitable for sliding in the sliding groove 10; the adjustment member 22 cooperates with the positioning column 26 to fix the limit ring 21 on the support platform 1 so that the cleaning cloth 23 can rotate synchronously with the support platform 1. The cleaning cloth 23 is arranged on the inner ring of the limit ring 21 and is suitable for abutting against the wafer 4; preferably, the cleaning cloth 23 is a sub800 special polishing pad. Among them, after the limit ring 21 abuts against the support platform 1, the adjusting member 22 moves downward and is inserted into the limit groove 11, and the adjusting member 22 is rotated circumferentially to limit the limit ring 21. The adjusting member 22 moves in the sliding groove 10 to drive the limiting ring 21 to slide radially relative to the supporting platform 1; the wafer 4 is inclined to abut against the cleaning cloth 23 to push the cleaning cloth 23 to deform until the bottom wall of the cleaning cloth 23 abuts against the upper surface of the supporting platform 1.

[0082] Continue to refer to the attached Figure 5 The adjusting member 22 includes: a lifting column 24, which is lifted and lowered on the limiting ring 21; a limiting block 25, which is arranged at the bottom of the lifting column 24 and is perpendicular to the lifting column 24. The length of the limiting block 25 is greater than the diameter of the lifting column 24, and the limiting block 25 is suitable for being inserted into the limiting groove 11. The limiting groove 11 is adapted to the adjusting member 22. When the limiting block 25 and the sliding groove 10 are parallel to each other, the limiting block 25 is suitable for being inserted into the limiting groove 11; and when the limiting block 25 and the sliding groove 10 are perpendicular to each other, the side wall of the limiting groove 11 abuts against the limiting block 25 to prevent the limiting block 25 from moving horizontally in the sliding groove 10.

[0083] Reference Figure 4 , a positioning hole 13 is provided at one end of the support platform 1 away from the limiting groove 11; the extension line of the positioning hole 13 and the sliding groove 10 passes through the axis of the support platform 1. A positioning column 26 is provided on the limiting ring 21 for lifting and lowering, and the positioning column 26 is suitable for being inserted into the positioning hole 13. When fixing the limiting ring 21, the positioning column 26 is inserted into the positioning hole 13, the adjusting member 22 is inserted into the limiting groove 11, and the lifting column 24 is rotated circumferentially so that the side wall of the limiting block 25 abuts against the side wall of the limiting groove 11 to prevent the cleaning mechanism 2 from moving horizontally relative to the support platform 1. At the same time, the adjusting member 22 can also prevent the limiting ring 21 from detaching from the upper surface of the support platform 1 when the support platform 1 drives the cleaning mechanism 2 to rotate.

[0084] Reference Figure 6 and Figure 7 , the limiting ring 21 is elastic; the bottom wall of the cleaning cloth 23 is provided with a gap from the upper surface of the support table 1, and when the chip 4 is tilted and abuts against the cleaning cloth 23, the cleaning cloth 23 is suitable for bending and deforming downward. When the liquid supply pipe 3 transports the cleaning liquid from top to bottom to the cleaning cloth 23, the cleaning cloth 23 cannot be quickly soaked by the cleaning liquid due to the gap between the bottom wall of the cleaning cloth 23 and the upper surface of the support table 1. Therefore, before the chip 4 is tilted and placed on the cleaning cloth 23, the liquid supply pipe 3 first transports the cleaning liquid to the support table 1, pushing the adjusting member 22 to move horizontally. At this time, the adjusting member 22 is suitable for pushing the cleaning liquid in the sliding groove 10 to flow into the receiving groove 12. The cleaning cloth 23 is soaked by the cleaning liquid in the receiving groove 12. To achieve the efficiency of being quickly soaked by the cleaning liquid.

[0085] Reference Figure 4 and Figure 5 The bottom wall of the limit ring 21 is symmetrically provided with a counterweight 27, and the center lines of the two counterweights 27 are perpendicular to the sliding groove 10; the upper surface of the support platform 1 is symmetrically provided with an adjustment groove 14 adapted to the counterweight 27, and the counterweight 27 is suitable for sliding in the adjustment groove 14. The arrangement of the counterweight 27, when the limit ring 21 moves horizontally along the upper surface of the support platform 1 until the counterweight 27 is separated from the adjustment groove 14, the limit ring 21 drives the limit ring 21 to slide away from the support platform 1 under the gravity of the counterweight 27; at this time, since the limit block 25 is still located in the sliding groove 10, the counterweight 27 is suitable for driving the limit block 25 to move from the sliding groove 10 to the receiving groove 12, so that the limit ring 21 can flow the cleaning liquid remaining on the upper surface of the support platform 1 and the cleaning liquid remaining in the sliding groove 10 to the receiving groove 12. It is avoided that the cleaning liquid remains on the support platform 1.

[0086] Some embodiments provide an end surface cleaning device, comprising:

[0087] Support table 1;

[0088] A cleaning mechanism 2, which is slidably disposed on the support table 1, and the cleaning mechanism 2 is suitable for abutting against the outer end surface of the wafer 4;

[0089] The cleaning mechanism 2 comprises: a limiting ring 21, which is slidably arranged on the upper end of the support platform 1, and the bottom wall of which abuts against the upper surface of the support platform 1;

[0090] An adjusting member 22, which is lifted and lowered on the limiting ring 21 and is suitable for sliding on the supporting platform 1;

[0091] A cleaning cloth 23, which is arranged on the inner ring of the limiting ring 21 and is suitable for contacting with the wafer 4;

[0092] After the limiting ring 21 contacts the support platform 1 , the adjusting member 22 moves downward and is inserted into the support platform 1 , and the adjusting member 22 is rotated circumferentially to limit the limiting ring 21 .

[0093] Furthermore, the support platform 1 is provided with a sliding groove 10 along the radial direction, and the cross section of the sliding groove 10 is "T"-shaped;

[0094] The two ends of the sliding groove 10 are respectively provided with a limiting groove 11 and a receiving groove 12 . The limiting groove 11 is arranged at the outer edge of the sliding groove 10 close to the supporting platform 1 . The inner diameter of the receiving groove 12 is larger than that of the limiting groove 11 .

[0095] Furthermore, the adjusting member 22 includes: a lifting column 24, which is lifted and lowered on the limiting ring 21;

[0096] The limit block 25 is disposed at the bottom of the lifting column 24 and is perpendicular to the lifting column 24 . The length of the limit block 25 is greater than the diameter of the lifting column 24 , and the limit block 25 is suitable for being inserted into the limit slot 11 .

[0097] Furthermore, a positioning hole 13 is formed at one end of the support platform 1 away from the limiting groove 11;

[0098] A positioning column 26 is provided on the limiting ring 21 and is adapted to be inserted into the positioning hole 13.

[0099] The adjusting member 22 is elastic;

[0100] A gap is provided between the bottom wall of the cleaning cloth 23 and the upper surface of the support table 1 , and when the wafer 4 is in contact with the cleaning cloth 23 in an inclined state, the cleaning cloth 23 is adapted to bend and deform downward.

[0101] Some embodiments provide a method for using a cleaning device including:

[0102] After the liquid supply pipe 3 delivers the cleaning liquid to the upper surface of the support platform 1, the cleaning mechanism 2 slides radially along the surface of the support platform 1 to speed up the time for the cleaning mechanism 2 to be wetted;

[0103] When the wafer 4 approaches the cleaning mechanism 2 in an inclined state, the cleaning mechanism 2 is squeezed and deformed to increase the contact area between the cleaning mechanism 2 and the wafer 4;

[0104] After cleaning is completed, the cleaning mechanism 2 slides radially relative to the support platform 1 to scrape off the cleaning liquid remaining on the surface of the support platform 1 .

[0105] In the description of the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0106] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. In addition, terms such as "first", "second" and other numerical terms do not imply an order or sequence when used in this document unless explicitly indicated above. Therefore, without departing from the teachings of the example embodiments, the first element, component, region, layer or section discussed above may be referred to as a second element, component, region, layer or section.

[0107] Based on the above ideal embodiments of the present invention, the relevant staff can make various changes and modifications without departing from the technical concept of the present invention through the above description. The technical scope of the present invention is not limited to the contents of the specification, and its technical scope must be determined according to the scope of the claims.

Claims

1. A device for cleaning the outer end surface of a silicon carbide wafer, characterized in that: include: Support table (1); A cleaning mechanism (2) slidably disposed on the support table (1); Liquid supply pipe (3); After the liquid supply pipe (3) delivers the cleaning liquid to the upper surface of the support platform (1), the cleaning mechanism (2) slides radially along the surface of the support platform (1) to speed up the time for the cleaning mechanism (2) to be soaked; When the wafer (4) approaches the cleaning mechanism (2) in an inclined state, the cleaning mechanism (2) is squeezed and deformed, thereby increasing the contact area between the cleaning mechanism (2) and the wafer (4); The cleaning mechanism (2) rotates relative to the wafer (4) to clean the outer end surface of the wafer (4); After the cleaning is completed, the cleaning mechanism (2) slides radially relative to the support platform (1) to scrape off the cleaning liquid remaining on the surface of the support platform (1); The support platform (1) is provided with a sliding groove (10) in the radial direction, and a limiting groove (11) is provided at one end of the sliding groove (10); The cleaning mechanism (2) comprises: a limiting ring (21) which is slidably arranged on the upper end of the support platform (1), and whose bottom wall abuts against the upper surface of the support platform (1); an adjusting member (22) which is arranged on the limiting ring (21) and is adapted to slide in the sliding groove (10); A cleaning cloth (23) arranged on the inner ring of the limiting ring (21) and suitable for abutting against the wafer (4); After the limiting ring (21) contacts the support platform (1), the adjusting member (22) moves downward and is inserted into the limiting groove (11), and the adjusting member (22) is rotated circumferentially to limit the limiting ring (21); The adjusting member (22) moves in the sliding groove (10) to drive the limiting ring (21) to slide radially relative to the supporting platform (1); The chip (4) is in contact with the cleaning cloth (23) in an inclined manner to push the cleaning cloth (23) to deform until the bottom wall of the cleaning cloth (23) is in contact with the upper surface of the support platform (1).

2. The silicon carbide wafer outer ring end surface cleaning device according to claim 1, characterized in that: The cross section of the sliding groove (10) is T-shaped; The other end of the sliding groove (10) is provided with a receiving groove (12), the limiting groove (11) is arranged at the outer edge of the sliding groove (10) close to the support platform (1), and the inner diameter of the receiving groove (12) is larger than that of the limiting groove (11); The cleaning mechanism (2) moves along the length direction of the sliding groove (10), and the bottom wall of the cleaning mechanism (2) abuts against the upper surface of the support platform (1) to clean the support platform (1).

3. The silicon carbide wafer outer ring end surface cleaning device according to claim 1, characterized in that: The adjusting member (22) comprises: a lifting column (24) which is lifted and arranged on the limiting ring (21); A limit block (25) is arranged at the bottom of the lifting column (24) and is perpendicular to the lifting column (24); the length of the limit block (25) is greater than the diameter of the lifting column (24), and the limit block (25) is suitable for being inserted into the limit groove (11).

4. The silicon carbide wafer outer ring end surface cleaning device according to claim 3, characterized in that: A positioning hole (13) is formed at one end of the support platform (1) away from the limiting groove (11); A positioning column (26) is provided on the limiting ring (21) for lifting, and the positioning column (26) is suitable for being inserted into the positioning hole (13).

5. The silicon carbide wafer outer ring end surface cleaning device according to claim 1, characterized in that: The limiting ring (21) is elastic; A gap is provided between the bottom wall of the cleaning cloth (23) and the upper surface of the support platform (1); When the chip (4) is in contact with the cleaning cloth (23) in an inclined state, the chip (4) presses the cleaning cloth (23) to bend downwards and deform.

6. The silicon carbide wafer outer ring end surface cleaning device according to claim 5, characterized in that: The bottom wall of the limiting ring (21) is symmetrically provided with counterweight blocks (27), and the center lines of the two counterweight blocks (27) and the sliding groove (10) are perpendicular to each other; An adjustment groove (14) adapted to the counterweight block (27) is symmetrically provided on the upper surface of the support platform (1), and the counterweight block (27) is suitable for sliding in the adjustment groove (14).

7. A method for using a cleaning device, characterized in that: The device for cleaning the outer end surface of a silicon carbide wafer as claimed in any one of claims 1 to 6 comprises: After the liquid supply pipe (3) delivers the cleaning liquid to the upper surface of the support platform (1), the cleaning mechanism (2) slides radially along the surface of the support platform (1) to speed up the time for the cleaning mechanism (2) to be soaked; When the wafer (4) approaches the cleaning mechanism (2) in an inclined state, the cleaning mechanism (2) is squeezed and deformed, thereby increasing the contact area between the cleaning mechanism (2) and the wafer (4); After cleaning is completed, the cleaning mechanism (2) slides radially relative to the support platform (1) to scrape off the cleaning liquid remaining on the surface of the support platform (1).

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