Manufacturing process of wafer heating disc

Abstract

The invention discloses a manufacturing process of a wafer heating plate, and relates to the technical field of PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment manufacturing. Comprising the steps that a containing groove is formed in the bottom of a hot plate top shell; a heating pipe body is adopted to coil a resistance heating structure, the resistance heating structure comprises a heating disc and a lead pipe, and a resistance wire is arranged in the heating disc; a resistance wire is arranged in the lead tube; the K couple is assembled in the hot plate top shell and used for measuring the temperature of the hot plate top shell; a heating disc of a resistance heating structure is placed in the containing groove, a gap between the heating disc and the containing groove is filled with aluminum powder, and vacuum brazing welding is carried out; the hot plate bottom shell is welded to the bottom of the hot plate top shell, and the lead pipe penetrates out of a first through hole of the hot plate bottom shell. The hot plate neck shell is connected to the lower portion of the hot plate bottom shell, the hot plate neck shell is provided with a second through hole which is formed in a penetrating mode, and the second through hole is communicated with the first through hole. According to the heating disc manufactured by the process, each wafer can be uniformly and stably heated through reasonable layout and an optimized resistance heating structure.

Description

Technical Field

[0001] The invention relates to the technical field of PECVD equipment and device manufacturing, and in particular to a manufacturing process of a wafer heating plate. Background Art

[0002] In the semiconductor manufacturing process, plasma enhanced chemical vapor deposition (PECVD) equipment is widely used in thin film deposition processes, in which the heating structure (heater) plays a vital role in the entire process, because the heating structure directly affects the uniformity of the deposition temperature, the deposition rate, and the quality of the final film. The design and optimization of the heating structure is the key to ensuring the stable performance of plasma enhanced chemical vapor deposition (PECVD) equipment and improving production efficiency.

[0003] In current plasma enhanced chemical vapor deposition (PECVD) equipment, resistance heating or infrared heating is usually used to heat the components in the process chamber. This heating method usually consists of a resistance wire embedded in the heating plate, or directly heating the wafer through an infrared lamp. The controller monitors the temperature in real time through a thermocouple or infrared sensor, and adjusts the current through a closed-loop feedback system to maintain the set temperature.

[0004] The existing heating structure, i.e. the manufacturing process of the heating plate, often cannot ensure the uniformity of heating. This is mainly due to the influence of factors such as the layout of the heating element, the thermal conductivity of the material, and the thermal isolation design. In addition, the temperature response of the heating plate is relatively slow, and it is difficult to quickly adapt to the rapidly changing process requirements; when rapid process switching or the completion of the process in a short time is required, the temperature often cannot reach the ideal set value, which in turn affects the deposition effect. Summary of the invention

[0005] The purpose of the present invention is to provide a manufacturing process for a wafer heating plate, which has a rapid temperature response capability and ensures that the temperature of the heating plate can quickly reach a set value and maintain a high degree of uniformity.

[0006] To achieve the above objectives, the present application proposes a manufacturing process for a wafer heating plate, comprising:

[0007] A receiving groove is formed at the bottom of the top shell of the hot plate;

[0008] A heating tube body coiled resistance heating structure is adopted, and the resistance heating structure includes a heating plate and a lead tube. The heating plate is equipped with a resistance wire for generating heat; the lead tube is equipped with a resistance wire wire for connecting a power source and the resistance wire;

[0009] A K-couple is assembled in the top shell of the hot plate to measure its temperature;

[0010] The heating plate of the resistance heating structure is placed in the containing groove, and the gap between the two is filled with aluminum powder, and vacuum brazing is performed;

[0011] The bottom shell of the heat plate is welded to the bottom of the top shell of the heat plate as the lower end cover of the encapsulated resistance heating structure, and the lead tube passes through the first through hole of the bottom shell of the heat plate;

[0012] The hot plate neck shell is connected to the bottom of the hot plate bottom shell, and the hot plate neck shell has a second through hole which is arranged through, and the second through hole is connected with the first through hole.

[0013] In one embodiment, a hot plate base is assembled at the lower part of the hot plate neck shell, and the hot plate base is installed on the PM chamber of the PECVD equipment.

[0014] In one embodiment, the material of the hot plate top shell and the hot plate bottom shell is AL3003P-H112; the material of the hot plate neck shell is AL3003B-H112.

[0015] In one embodiment, the hot plate bottom shell is welded to the bottom of the hot plate top shell, and the hot plate neck shell is welded below the hot plate bottom shell.

[0016] In one embodiment, the heating plate includes a symmetrically arranged first arc portion, a symmetrically arranged second arc portion and an annular portion with an opening structure, the second arc portion is located on the inner side of the first arc portion and the two are connected by a first bending portion, and there is a first spacing between the first bending portions; the annular portion is connected to the second arc portion through the second bending portion, respectively, and there is a second spacing between the second bending portions, and the second spacing is greater than the first spacing.

[0017] In one embodiment, the first arc-shaped portion, the second arc-shaped portion, and the annular portion have the same center.

[0018] In one embodiment, the second arc portion is connected to the corresponding lead tube through the second straight tube and the third bent portion in sequence.

[0019] In one of the embodiments, magnesium oxide powder is filled between the heating tube body and the resistance wire.

[0020] In one embodiment, the heating plate and the lead tube are arranged vertically.

[0021] Compared with the prior art, the above technical solution adopted by the present invention has the following advantages:

[0022] 1) The gap between the heating plate and the top shell of the heating plate is filled with aluminum powder and vacuum brazed, which greatly enhances the heat conduction efficiency and enables heat to be transferred to the wafer faster.

[0023] 2) The heating plate produced by this process is used to heat a single wafer, and has excellent stability and durability, and can withstand harsh working environments such as high temperature and high pressure; through reasonable layout and optimized resistance heating structure, it can ensure that each wafer is heated evenly and stably. This helps to reduce the temperature difference between wafers, thereby improving the uniformity and consistency of the film.

[0024] 3) The heating plate of the present application can quickly transfer heat energy to the wafer, ensuring that the wafer reaches the required deposition temperature in a short time. This helps to improve production efficiency and reduce energy consumption.

[0025] 4) The optimized resistance heating structure can ensure uniform distribution of heat on the wafer heating base; through reasonable winding method and spacing design, the temperature uniformity is further optimized, so that the wafer is heated more evenly during the heating process, avoiding local overheating or insufficient temperature, which helps to improve the quality and consistency of wafer processing.

[0026] 5) The circular coiled heating wire design helps reduce heat loss and improve the thermal efficiency of semiconductor equipment. It has good structural stability and durability, which can extend the service life of the equipment and reduce maintenance costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a cross-sectional view of the manufacturing process of the wafer heating plate;

[0028] Figure 2 This is the appearance diagram of the manufacturing process of the wafer heating plate;

[0029] Figure 3 It is a schematic diagram of the resistance heating structure;

[0030] Figure 4 This is a top view of the resistance heating structure.

[0031] Wherein: 1. resistance heating structure, 2. top shell of hot plate, 3. K couple, 4. neck shell of hot plate, 5. base of hot plate, 6. positioning pin;

[0032] 11. first arc-shaped portion, 12. second arc-shaped portion, 13. annular portion, 14. lead tube, 21. first bent portion, 211. first bent tube, 212. first straight tube, 22. second bent portion, 23. third bent portion, 231. short tube, 232. third straight tube, 232. third bent tube. DETAILED DESCRIPTION

[0033] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0034] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0035] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" means two or more, unless otherwise clearly and specifically defined. "Several" means one or more, unless otherwise clearly and specifically defined.

[0036] In the description of the present application, it should be understood that the terms "center", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0037] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0038] Example 1

[0039] This embodiment provides a process for manufacturing a wafer heating plate, such as Figure 1-2 As shown, including:

[0040] Open a groove at the bottom of the top shell of the hot plate: First, you need to accurately open a groove at the bottom of the top shell of the hot plate. This groove is used to place the heating plate in the resistance heating structure. The top shell of the hot plate is in direct contact with the wafer and is also the heating layer.

[0041] A heating tube body is used to coil a resistance heating structure: the resistance heating structure includes a heating plate and a lead tube. The heating plate is equipped with a resistance wire for generating heat, and magnesium oxide powder is filled between the heating tube body and the resistance wire. The magnesium oxide powder has a high thermal conductivity and can effectively transfer the heat generated by the resistance wire to the heating tube body, and then further transfer it to the wafer to be heated, thereby achieving an efficient heating effect; and magnesium oxide powder is an excellent insulator, which can effectively isolate the electrical contact between the resistance wire and the heating tube body, ensuring that the surface of the heating tube body is not charged, thereby improving the safety performance of the heating tube; the lead tube is equipped with a resistance wire wire for connecting the power supply and the resistance wire, and the lead tube part does not conduct heat.

[0042] Assemble the K-couple inside the top shell of the hot plate: The K-couple (usually a thermocouple) is a temperature sensor used to measure the temperature inside the top shell of the hot plate to ensure accurate control of the heating process.

[0043] The heating plate of the resistance heating structure is placed in the receiving groove, and the gap between the two is filled with aluminum powder, and vacuum brazing is performed: a continuous and tight heat conduction path can be formed; this helps to reduce the loss of heat during the transfer process and improve the overall heat conduction efficiency of the heating base. Efficient heat conduction can ensure that the wafer obtains a uniform and stable temperature distribution during the deposition process, thereby improving the quality and uniformity of the deposited film. After aluminum powder is filled and welded, the connection strength between the heating plate and the top shell of the heating plate can be significantly enhanced. This reinforced structure can resist the thermal and mechanical stresses generated during the process and ensure the long-term stability and reliability of the heating base; the stable structure helps to reduce process fluctuations and improve the controllability and repeatability of the deposition process.

[0044] The bottom shell of the heat plate is welded to the bottom of the top shell of the heat plate as the lower end cover of the packaged resistance heating structure, and the lead tube passes through the first through hole of the bottom shell of the heat plate: the bottom shell of the heat plate is welded to the bottom of the top shell of the heat plate to form a complete packaging structure. The lead tube passes through the first through hole of the bottom shell of the heat plate to connect an external power supply.

[0045] The neck shell of the heating plate is connected to the bottom shell of the heating plate: the neck shell of the heating plate has a second through hole which is arranged through the neck shell, and the second through hole is connected with the first through hole, so as to further fix and support the whole heating plate structure.

[0046] The hot plate base is assembled at the lower part of the hot plate neck shell. The hot plate base is installed on the PM chamber of the PECVD equipment through positioning pins and sealing rings to support the entire heating base to prevent deformation. The hot plate base is made of AL6061-T6, which can ensure that the heating base has excellent physical and mechanical properties, good thermal properties, and easy processing and welding properties.

[0047] As a preferred implementation provided in this embodiment, the material of the top shell and bottom shell of the hot plate is AL3003P-H112; the material of the neck shell of the hot plate is AL3003B-H112, which has better strength than AL3003P-H112. This application selects AL3003P-H112 and AL3003B-H112 as the material of the top shell, bottom shell and neck shell of the hot plate in the manufacturing process of the wafer heating plate, which can ensure that the heating base has excellent corrosion resistance, good formability and plasticity, excellent weldability, good thermal conductivity, high strength and durability. These advantages work together to improve the quality and uniformity of the deposited film, reduce production costs and improve production efficiency.

[0048] Example 2

[0049] like Figure 3-4 As shown, this embodiment introduces the resistance heating structure in Example 1 in detail, and the heating plate includes a symmetrically arranged first arc portion, a symmetrically arranged second arc portion and an annular portion with an opening structure, the second arc portion is located inside the first arc portion and the two are connected by a first bending portion, the annular portion is connected to the second arc portion through the second bending portion, and the second arc portion is connected to the corresponding lead tube through the second straight tube and the third bending portion in turn. The shape of the heating plate is designed to limit the shape of the resistance wire, ensuring uniform energy distribution of the wafer during the heating process. This not only helps to achieve consistent heating effects in various areas on the wafer, but also avoids wafer quality problems caused by local overheating or insufficient overheating. Uniform heating can also reduce thermal stress inside the wafer and prevent deformation or cracking of the wafer due to thermal expansion and contraction.

[0050] There is a first spacing between the first bending parts; there is a second spacing between the second bending parts, and the second spacing is greater than the first spacing, which helps to optimize the current distribution on the entire resistance wire and reduce local overheating and energy loss.

[0051] The first bending portion includes first bent tubes arranged at both ends of the first straight tube, one of the first bent tubes is connected to the first arc portion, and the other first bent tube is connected to the second arc portion, which not only enhances the overall structural strength of the resistance wire, but also improves its stability in a high temperature environment, and reduces deformation or damage caused by thermal expansion and contraction; the second bent portion is an arc tube, which increases the contact area between the resistance wire and the top structure of the heating plate, thereby improving the heat dissipation efficiency; this helps to reduce the operating temperature of the resistance wire, extend its service life, and reduce energy loss. The third bent portions extending into the annular portion have an inwardly expanding spacing between them, which helps to optimize the current distribution; each third bent portion includes a short tube, a third straight tube, and a third bent tube connected in sequence, wherein the short tube is connected to the second straight tube, and the third bent tube is connected to the lead tube, and the straight tubes have a parallel spacing between them. This structure can guide the current to flow through the resistance wire more evenly, reduce local overheating and energy loss, and improve energy efficiency.

[0052] The first arc portion, the second arc portion, and the annular portion have the same center; the structure of the entire resistance wire presents a high degree of symmetry, which helps to ensure the uniformity and stability of the resistance wire during the heating process; the design of sharing the center of the circle simplifies the design and manufacturing process of the resistance wire. Designers can more easily come up with the size and shape of the arc portion, and manufacturers can use standardized tools and molds to produce these parts, thereby improving production efficiency and reducing costs.

[0053] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. The manufacturing process of the wafer heating plate is characterized in that: include: A receiving groove is formed at the bottom of the top shell of the hot plate; A heating tube body coiled resistance heating structure is adopted, and the resistance heating structure includes a heating plate and a lead tube. The heating plate is equipped with a resistance wire for generating heat; the lead tube is equipped with a resistance wire wire for connecting a power source and the resistance wire; A K-couple is assembled in the top shell of the hot plate to measure its temperature; The heating plate of the resistance heating structure is placed in the containing groove, and the gap between the two is filled with aluminum powder, and vacuum brazing is performed; The bottom shell of the heat plate is welded to the bottom of the top shell of the heat plate as the lower end cover of the encapsulated resistance heating structure, and the lead tube passes through the first through hole of the bottom shell of the heat plate; The hot plate neck shell is connected to the bottom of the hot plate bottom shell, and the hot plate neck shell has a second through hole which is arranged through, and the second through hole is connected with the first through hole.

2. The manufacturing process of the wafer heating plate according to claim 1, characterized in that: A hot plate base is assembled at the lower part of the hot plate neck shell, and the hot plate base is installed on the PM chamber of the PECVD equipment.

3. The manufacturing process of the wafer heating plate according to claim 1, characterized in that: The material of the hot plate top shell and the hot plate bottom shell is AL3003P-H112; the material of the hot plate neck shell is AL3003B-H112.

4. The manufacturing process of the wafer heating plate according to claim 1, characterized in that: The hot plate bottom shell is welded to the bottom of the hot plate top shell, and the hot plate neck shell is welded below the hot plate bottom shell.

5. The manufacturing process of the wafer heating plate according to claim 1, characterized in that: The heating plate includes a symmetrically arranged first arc-shaped portion, a symmetrically arranged second arc-shaped portion and an annular portion with an opening structure, wherein the second arc-shaped portion is located on the inner side of the first arc-shaped portion and the two are connected by a first bending portion, and there is a first spacing between the first bending portions; the annular portion is connected to the second arc-shaped portion through the second bending portion, respectively, and there is a second spacing between the second bending portions, and the second spacing is greater than the first spacing.

6. The manufacturing process of the wafer heating plate according to claim 1, characterized in that: The first arc-shaped portion, the second arc-shaped portion, and the annular portion have the same center.

7. The manufacturing process of the wafer heating plate according to claim 1, characterized in that: The second arc portion is connected to the corresponding lead tube through the second straight tube and the third bent portion in sequence.

8. The manufacturing process of the wafer heating plate according to claim 1, characterized in that: The space between the heating tube body and the resistance wire is filled with magnesium oxide powder.

9. The manufacturing process of the wafer heating plate according to claim 1, characterized in that: The heating plate and the lead tube are arranged vertically.

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