Reactor of epitaxial equipment and epitaxial equipment

Abstract

The invention discloses a reactor of epitaxy equipment and the epitaxy equipment, the reactor comprises a reaction chamber, the reaction chamber is defined by a chamber cover, a side wall and a base of the reactor, the reaction chamber is internally provided with a pedestal, and the pedestal is provided with a slide glass disc and a heating device; the cavity cover comprises a central gas inlet assembly, a cooling assembly and a peripheral gas inlet assembly arranged around the central gas inlet assembly, the central gas inlet assembly is used for blowing out reaction gas into the reaction cavity, the peripheral gas inlet assembly is used for blowing out carrier gas into the reaction cavity, the cooling assembly comprises a cooling channel, and the cooling channel is communicated with the central gas inlet assembly. The cooling channel is at least partially arranged at the edges of the central air inlet assembly and the peripheral air inlet assembly; when film growth is carried out in the reaction cavity, carrier gas blown out by the peripheral gas inlet assembly can collide with the reaction gas so as to change the growth speed of the film on the workpiece to be machined. The film thickness uniformity of film growth can be improved, and the cavity cover can be effectively cooled.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a reactor and epitaxial equipment. Background Art

[0002] The epitaxial process is to deposit a thin single crystal layer on a single crystal substrate. This newly deposited single crystal layer is called an epitaxial layer. Epitaxial processes are widely used in silicon-based integrated circuit manufacturing. For example, silicon epitaxy is used to grow a pure and finely controlled silicon layer on a silicon substrate, which is extremely important for the manufacture of advanced integrated circuits. In addition, in power devices, SiC and GaN are two commonly used wide bandgap semiconductor materials with excellent power handling capabilities. These materials are usually grown on silicon or other substrates through epitaxial processes. Common epitaxial growth methods include MOCVD (Metal-organic Chemical Vapor Deposition). During the MOCVD film growth process, organic metals and hydride gases containing the required elements are supplied to the substrate at an appropriate temperature, and the required semiconductor materials are generated through chemical reactions and deposited on the substrate, while the remaining compounds and reaction products are discharged. When the current MOCVD method is used for epitaxial film growth, the uniformity of the film thickness is difficult to control, which greatly affects the improvement of the quality of the epitaxial wafer. Summary of the invention

[0003] In order to solve the problem that the uniformity of thin film growth cannot meet the requirements, the first aspect of the present invention provides a reactor of an epitaxial device, comprising:

[0004] A reaction chamber, the reaction chamber is defined by a chamber cover, a side wall and a base of the reactor, a rotatable base is provided in the reaction chamber, a plurality of wafer carriers for carrying workpieces to be processed are provided on the base, and a heating device for heating the base and the wafer carriers is also provided in the reaction chamber;

[0005] a chamber cover, arranged above the reaction chamber, the chamber cover comprising a central air inlet assembly, a cooling assembly, and a peripheral air inlet assembly arranged around the central air inlet assembly, the central air inlet assembly being used to blow out reaction gas into the reaction chamber, the peripheral air inlet assembly being used to blow out carrier gas into the reaction chamber, the cooling assembly comprising a cooling channel, the cooling channel being at least partially arranged at the edges of the central air inlet assembly and the peripheral air inlet assembly;

[0006] When thin film growth is carried out in the reaction chamber, the carrier gas blown out by the peripheral gas inlet assembly can collide with the reaction gas to change the growth speed of the thin film on the workpiece to be processed.

[0007] Optionally, the peripheral air inlet assembly is arranged between the rotation center axis of the base and the rotation center axis of the wafer carrier.

[0008] Optionally, the peripheral air intake assembly includes a plurality of carrier gas output components capable of independently intake air, and the collision of the carrier gas blown out by each carrier gas output component with the reaction gas can change the film growth rate of the area on the workpiece corresponding to the carrier gas output component.

[0009] Optionally, the central air inlet assembly includes a plurality of top air outlet holes opened on the bottom surface of the chamber cover toward the reaction chamber and used for spraying carrier gas, the top air outlet holes are evenly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the base, and each of the carrier gas output components includes the top air outlet holes on one or more adjacent concentric circles.

[0010] Optionally, the central air intake assembly includes a first air intake channel, the first air intake channel includes a horizontal channel, and the central axis of the top air outlet is perpendicular to the central axis of the horizontal channel.

[0011] Optionally, at least a portion of the outer walls of the central air intake assembly and the peripheral air intake assembly constitute the inner wall of the cooling channel.

[0012] Optionally, a through hole is provided in the center of the cavity cover, and the peripheral air inlet assembly and at least a portion of the outer wall of the peripheral wall of the through hole constitute the inner wall of the cooling channel.

[0013] Optionally, the cooling channel includes a flow direction portion and a bending and turning portion, and an outer wall of the peripheral air intake assembly constitutes a portion of an inner wall of the bending and turning portion.

[0014] Optionally, the cooling assembly includes at least two cooling channels, the cooling channels are in an arc shape, and the curvature of the outer wall of the through hole is the same as the curvature of the arc.

[0015] A second aspect of the present invention provides an epitaxial device, characterized in that it comprises: a reactor comprising the epitaxial device according to any one of claims 1-9.

[0016] Beneficial effects of the present invention: The carrier gas ejected from the peripheral gas inlet assembly provided in the reaction chamber of the present invention can press down the reaction gas ejected from the central gas inlet assembly, at least partially disperse the gas flow of the reaction gas, and make the reactants flowing to the surface of the wafer more uniform, so that the film growth rate of each area on the final wafer is more uniform. At the same time, the peripheral gas inlet assembly includes a plurality of carrier gas output parts that can independently inlet gas, and each non-overlapping concentric radial area of ​​the wafer corresponds to one or more of the carrier gas output parts. By adjusting the carrier gas flow rate of any of the carrier gas output parts, the film growth rate of the radial area of ​​the workpiece to be processed corresponding to the carrier gas output part can be changed, and the adjustment efficiency is high, and the film uniformity is also better. By using the carrier gas to press down and disperse the reaction gas, on the one hand, the normal reaction of the reaction gas of the preset proportion will not be destroyed; on the other hand, the amount of reaction gas can be saved and the reaction gas will not be wasted. At the same time, by adding a carrier gas output part on the top, the adjustment method can be simplified, greatly reducing the difficulty of adjusting the uniformity of the film. Due to the existence of some cavities, local high temperatures are easily formed in the central air intake component and the peripheral air intake component. Setting the cooling channel at least partially at the edge of the central air intake component and the peripheral air intake component can effectively cool the area of ​​the central air intake component and the peripheral air intake component, thereby improving the overall cooling efficiency of the cavity cover. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0018] Figure 1 This is one of the structural schematic diagrams of a reactor of an epitaxial device in an embodiment of the present invention;

[0019] Figure 2 This is a second structural schematic diagram of a reactor of an epitaxial device according to an embodiment of the present invention;

[0020] Figure 3 This is a third structural schematic diagram of a reactor of an epitaxial device according to an embodiment of the present invention;

[0021] Figure 4 This is one of the structural schematic diagrams of an air intake pipeline of an epitaxial device in an embodiment of the present invention;

[0022] Figure 5 This is a second structural schematic diagram of an air intake pipeline of an epitaxial device in an embodiment of the present invention;

[0023] Figure 6 This is a third structural schematic diagram of an air intake pipeline of an epitaxial device in an embodiment of the present invention;

[0024] Figure 7 is a cross-sectional view of a central air inlet assembly of a reactor of an epitaxial device in an embodiment of the present invention;

[0025] Figure 8 It is a structural schematic diagram of a central air inlet assembly of a reactor of an epitaxial device in an embodiment of the present invention;

[0026] Fig. 9 is a cross-sectional view of a central air inlet assembly of a reactor of an epitaxial device in an embodiment of the present invention;

[0027] Fig.10 It is a structural schematic diagram of a central air inlet assembly of a reactor of an epitaxial device in an embodiment of the present invention;

[0028] Fig.11 This is one of the structural schematic diagrams of a wafer of a reactor of an epitaxial device in an embodiment of the present invention;

[0029] Fig.12 This is a second structural schematic diagram of a wafer of a reactor of an epitaxial device in an embodiment of the present invention;

[0030] Fig.13 for Figure 1 The simulation result diagram of the gas flow field of a reactor of an epitaxial device of the present invention is shown;

[0031] Fig.14 This is a fourth structural schematic diagram of a reactor of an epitaxial device according to an embodiment of the present invention;

[0032] Fig.15 It is a schematic structural diagram of a chamber cover of a reactor of an epitaxial device in an embodiment of the present invention;

[0033] Fig.16 A longitudinal cross-sectional view of a chamber cover of a reactor of an epitaxial device in an embodiment of the present invention;

[0034] Fig.17 It is a transverse cross-sectional view of a chamber cover of a reactor of an epitaxial device in an embodiment of the present invention.

[0035] Among them, the figure markings are: 100, reaction chamber; 1, chamber cover; 2, reaction chamber; 21, side wall; 3, base; 31, wafer carrier; 32, wafer; 321, outer circle area; 322, middle circle area; 323, inner circle area; 4, central air inlet assembly; 41, first air outlet; 42, first air inlet channel; 421, first layer; 422, second layer; 423, third layer; 425, fifth layer; 426, sixth layer; 427, seventh layer; 45, partition; 46, vertical channel; 47, horizontal channel; 48, vertical section; 49, horizontal section; 5, peripheral air inlet assembly; 51, top air outlet; 52, carrier gas output member; 521, inner carrier gas output Component; 522, middle carrier gas output component; 523, outer carrier gas output component; 53, main channel; 531, first main channel; 532, second main channel; 533, third main channel; 534, fourth main channel; 535, fifth main channel; 536, sixth main channel; 54, secondary channel; 55, connecting cavity; 56, vertical projection; 57, baffle; 6, air inlet pipeline; 61, first branch pipe; 62, second branch pipe; 63, third branch pipe; 7, rotating device; 8, cooling component; 81, cooling channel; 82, flow direction portion; 83, bending and turning portion; 84, water inlet hole; 85, water outlet hole; 86, partition plate; 9, heating device; 10, base; 11, through hole. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0037] In order to better understand the technical content of the present invention, specific embodiments are described below in conjunction with the accompanying drawings.

[0038] Various aspects of the present invention are described in this disclosure with reference to the accompanying drawings, in which many illustrative embodiments are shown. The embodiments of the present disclosure are not necessarily intended to include all aspects of the present invention. It should be understood that the various concepts and embodiments introduced above, as well as those described in more detail below, can be implemented in any of many ways, because the concepts and embodiments disclosed by the present invention are not limited to any implementation. In addition, some aspects disclosed by the present invention can be used alone or in any appropriate combination with other aspects disclosed by the present invention.

[0039] It should be noted that when an element is referred to as being "connected to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0040] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined. The meaning of "plurality" is one or more, unless otherwise clearly and specifically defined.

[0041] In the description of the present invention, it should be understood that the terms "center", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0042] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0043] Reference throughout the specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, when the phrases "in one embodiment," "in some embodiments," or "in some of these embodiments" appear in various places throughout the specification, not all references are to the same embodiment. Furthermore, in one or more embodiments, the particular features, structures, or characteristics may be combined in any suitable manner.

[0044] The "multi-wafer planetary" in the present application means that each base 3 can accommodate at least two wafer carriers 31, such as 2, 3, 4, etc., and each wafer carrier 31 carries one wafer. The base 3 can be optionally a planetary base, that is, the wafer carriers 31 are distributed in a circle around the center of the base 3. In the wafer epitaxial process, the wafer carriers 31 rotate around the rotation center axis of the base 3, and each wafer carrier 31 rotates around its own rotation center axis under the action of the fluid.

[0045] In the reaction chambers of some epitaxial equipment equipped with a horizontal gas outlet structure, the concentration of the horizontally ejected reaction gas gradually decreases along the forward direction with the continuous chemical reaction, so that the film growth rate of the wafer is the highest on the side closest to the horizontal gas outlet structure, and the farther away from the horizontal gas outlet structure, the lower the film growth rate of the wafer. At the same time, since the carrier plate 31 is constantly rotating with the wafer, the area on the wafer closest to the horizontal gas outlet structure will theoretically be repeatedly deposited with more reactants after the reaction of the reaction gas, and the area far away from the horizontal gas outlet structure will be repeatedly deposited with fewer reactants or even no repeated deposition, resulting in very uneven film growth at various locations on the wafer.

[0046] See also Figure 1 , Figure 2 , Figure 3 In order to solve the above problems, an embodiment of the present application provides an epitaxial device, which includes a reactor 100. In some embodiments, the reactor 100 of the epitaxial device includes a chamber cover 1, a reaction chamber 2, a base 3, and a plurality of wafer carriers 31, wherein the reaction chamber 2 defines a process environment space, the chamber cover 1 is disposed on the top of the reaction chamber 2, the base 3 is rotatably disposed in the reaction chamber 2 and is arranged parallel to the chamber cover 1, and further, the base 3 can rotate around the rotation center axis c of the base 3. A plurality of wafer carriers 31 are circumferentially distributed on the base 3, and the wafer carriers 31 are used to carry the workpiece to be processed, and the wafer carriers 31 can revolve around the rotation center axis c of the base 3, and can also rotate around the rotation center axis d of the wafer carrier 31.

[0047] The workpiece to be processed in the present application refers to any substrate on which film forming treatment is performed during the manufacturing process. The substrate includes a wafer 32 or is described as a wafer, substrate, epitaxial wafer, substrate, etc. The materials on which film forming treatment can be performed include materials such as silicon, silicon carbide, silicon oxide, strained silicon, carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, gallium nitride, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials. In the following embodiments, the workpiece to be processed is taken as an example of a wafer 32. It can be understood that the workpiece to be processed has a circular or nearly circular surface. The workpiece to be processed can be other substrates such as wafers and epitaxial wafers and is not limited. In the reaction chamber 2 of a multi-chip planetary epitaxial device, the wafer 32 on which the thin film layer is to be grown is placed on a rapidly rotating carrier plate 31 so that its surface is evenly exposed to the gas environment in the reaction chamber 2 for semiconductor material deposition.

[0048] When the reaction gas approaches the rotating susceptor 3 and / or the wafer carrier plate 31, the temperature of the reaction gas increases significantly, and the viscous resistance of the rotating susceptor 3 and / or the wafer carrier plate 31 causes the gas to rotate around the axis of the susceptor 3 and / or the wafer carrier plate 31, so that the gas flows around the axis and flows outward toward the periphery of the susceptor 3 and / or the wafer carrier plate 31 in the boundary area near the surface of the susceptor 3 and / or the wafer carrier plate 31. Depending on the reaction gas used in the process, pyrolysis can occur in or near the boundary area at an intermediate temperature between the temperature at the gas ejection position and the temperature of the susceptor 3 and / or the wafer carrier plate 31. The pyrolysis is conducive to the interaction of the reaction gas and the growth of the crystal structure. The undeposited gas continues to flow to the periphery and flows through the outer edge of the susceptor 3, and can be removed from the reaction chamber 2 by one or more exhaust ports (not shown) arranged below the susceptor 3.

[0049] Please refer to Figure 1 , Figure 2 , Figure 3, the base 3 in the reaction chamber 2 is a plate-like body, the diameter can be selected to be between 500mm and 2000mm, and the material can be selected to be made of graphite or other high temperature resistant materials. In one embodiment, a rotating device 7 is provided in the center of the base 3, and the rotating device 7 can drive the base 3 to rotate. In one embodiment, a plurality of wafer trays 31 are arranged around the rotation center axis of the base 3, and the wafer trays 31 are used to carry the workpiece to be processed, such as a wafer 32, and the wafer trays 31 can be made of quartz or graphite, or other high temperature resistant materials. In some embodiments, 6, 7, 8, 9 or other number of wafer trays 31 are distributed around the center of the base 3 and equidistant from the center, and the wafer trays 31 are evenly distributed in a circle, and the center distance of the base 3 to the center of the wafer tray 31 can be selected to be 100mm-800mm, or other distances. It can be understood that the uniform distribution of the present application generally refers to the distribution with equal spacing. The wafer tray 31 is driven to rotate by airflow. In this embodiment, the wafer carrier 31 is constructed in a disc shape. In other embodiments, the wafer carrier 31 can be square, hexagonal or other shapes without limitation. In one embodiment, the base 3 rotates around the rotation center axis c of the base 3, and the wafer carrier 31 can rotate around the rotation center axis d of the wafer carrier 31 and revolve around the rotation center axis c of the base 3. The rotation speed of the base 3 can be selected as 20-300rpm, and the rotation speed of the wafer carrier 31 can be selected as 120-860rpm. It can be understood that the rotation mode and rotation speed of the base 3 and the wafer carrier 31 can be changed as needed and are not limited. The base 3 provided in this embodiment is provided with an air groove (not shown), and the wafer carrier 31 is arranged opposite to the air groove. It can use the fluid introduced into the multiple air grooves of the base 3 to float, support, position and / or rotate the wafer carrier 31. In some embodiments, a flow channel for fluid flow is provided on the back of the wafer carrier 31. By controlling the fluid properties delivered from the multiple gas slots to the surface of the wafer carrier 31, such as the gas flow rate of the fluid from the multiple gas slots, the floating height of the wafer carrier 31 can be changed. The floating, supporting, positioning and / or rotating wafer carrier 31 is caused by the friction force and atomic kinetic energy transfer of the fluid flowing over the surface of the wafer carrier 31. Under the action of the airflow, the wafer carrier 31 drives the wafer to float together and rotate around its own rotation center axis d, and the rotation of the base 3 can drive the wafer carrier 31 to rotate together.

[0050] The chamber cover 1 is made of quartz or other high temperature resistant materials. In one embodiment, the outer diameter of the chamber cover 1 is substantially consistent with the outer diameter of the base 3. In one embodiment, the outer diameter of the chamber cover 1 is 500 mm-2000 mm. The spacing between the chamber cover 1 and the base 3 extending parallel to each other is about 80 mm-400 mm, and further, 100 mm-200 mm. It can be understood that the spacing can be adjusted as needed and is not limited.

[0051] In one embodiment, see Figure 1 , Figure 3 The reactor 100 includes a side wall 21 disposed below the chamber cover 1, and a base 10 disposed relatively spaced apart from the chamber 1, wherein the side wall 21, the chamber cover 1, and the base 10 together enclose the reaction chamber 2, that is, the reaction chamber 2 is defined by the chamber cover 1, the side wall 21, and the base 10 of the reactor 100, and a rotatable base is disposed in the reaction chamber, and a plurality of wafer carriers capable of carrying workpieces to be processed are disposed on the base;

[0052] a chamber cover, arranged above the reaction chamber, the chamber cover comprising a central air inlet assembly, a cooling assembly, and a peripheral air inlet assembly arranged around the central air inlet assembly, the central air inlet assembly being used to blow out reaction gas into the reaction chamber, the peripheral air inlet assembly being used to blow out carrier gas into the reaction chamber, the cooling assembly comprising a cooling channel, the cooling channel being at least partially arranged at the edges of the central air inlet assembly and the peripheral air inlet assembly;

[0053] The side wall 21 may be made of quartz material or other high temperature resistant materials. In one embodiment, a heating device 9 is further provided at the bottom of the base 3, and the heating device 9 may be a resistance heating device, an electromagnetic induction heating device, or an RFC heating device, etc., which are not limited. The heating device 9 is used to heat the wafer carrier 31 and the base 3. In some embodiments, the reactor 100 is further provided with a base 10, which is used to seal the reaction chamber 2 from below and to carry the device in the reaction chamber 2.

[0054] The chamber cover 1 is provided with a central air inlet assembly 4 and a peripheral air inlet assembly 5. The central air inlet assembly 4 is used to introduce reaction gas into the reaction chamber 2. It should be noted that in the field of semiconductor epitaxial growth technology, the flow rate of the introduced reaction gas is usually not large. In order to avoid pre-reaction and to send the reaction gas to the designated reaction area, the reaction gas is usually introduced together with the carrier gas. The reaction gas introduced in the present application refers to the reaction gas, and may also include other gases, such as carrier gas, and it is not only the reaction gas that can be introduced and the carrier gas that can be excluded. The peripheral air inlet assembly 5 is used to introduce the carrier gas into the reaction chamber 2. Among them, the carrier gas introduced into the reaction chamber 2 by the peripheral air inlet assembly 5 can press down at least part of the reaction gas introduced into the reaction chamber 2 by the central air inlet assembly 4 and make the airflow introduced into the reaction chamber 2 by the central air inlet assembly 4 more dispersed and blown to the wafer carrier 31. When the wafer carrier 31 rotates around the rotation center axis of the wafer carrier 31, the thin film growth rate of the area of ​​the workpiece to be processed corresponding to the carrier gas output member 52 can be changed by adjusting the carrier gas flow rate of any of the carrier gas output members 52.

[0055] Downward pressure refers to further downward movement away from the original trajectory, that is, the trajectory after downward pressure is below the trajectory before downward pressure. Downward pressure is not limited to vertical downward pressure, but also includes downward pressure diagonally downward. When the airflow moves in the injection direction, it is also impacted by the vertical downward or diagonally downward airflow, so that the airflow is blown toward the carrier plate 31 in a parabolic shape and compared with the airflow that falls naturally due to horizontal injection, part of the gas will be dispersed to make the airflow field more uniform. When thin film growth is carried out in the reaction chamber 2, the carrier gas blown out by the peripheral air intake assembly 5 can collide with the reaction gas to change the growth rate of the thin film on the workpiece to be processed. In some embodiments, the ratio of carrier gas and reaction gas in the mixed gas ejected by the central air intake assembly 4 can be set as needed. For example, the reaction gas flow rate can be 1% of the carrier gas flow rate. Optionally, the carrier gas is 40SLM and the reaction gas is 0.4SLM, which is not limited.

[0056] The reaction gas includes a first precursor gas and a second precursor gas. The first precursor gas is a gas containing a Group V element, such as TCS. TCS (Trichlorosilane) is a chemical substance with a chemical formula of SiHCl. 3 , or a gas of group VI elements. The second precursor gas is an organic substance containing group III elements, such as ethylene gas, or a gas of group II elements. It can be understood that the first precursor gas and the second precursor gas can be interchangeable; the carrier gas is a gas that does not react with the precursor gas, such as nitrogen, hydrogen, etc.

[0057] The central air intake assembly 4 and the peripheral air intake assembly 5 are respectively connected to an air intake pipeline 6, and the structure of the air intake pipeline 6 includes at least one of the following structures: Structure 1, such as Figure 4 As shown, the air inlet pipeline 6 only includes a first branch pipe 61, which is used to introduce carrier gas; Structure II, as shown Figure 5 As shown, the air inlet pipeline 6 includes a first branch pipe 61 and a second branch pipe 62 which are interconnected, wherein the first branch pipe 61 is used to introduce a carrier gas, and the second branch pipe 62 is used to introduce a reaction gas, and the reaction gas can be one of a first precursor gas and a second precursor gas; Structure III, as shown Figure 6As shown, the air inlet pipe 6 includes a first branch pipe 61, and a second branch pipe 62 and a third branch pipe 63 respectively connected to the first branch pipe 61, wherein the first branch pipe 61 is used to pass the carrier gas, the second branch pipe 62 is used to pass the first precursor gas and the second precursor gas, and the third branch pipe 63 is used to pass the doping gas. It should be noted that the first branch pipe 61, the second branch pipe 62, and the third branch pipe 63 are each individually provided with a flow controller (not shown), for example, an MFC (Mass Flow Controller) can be selected, and the flow controller is connected to the controller, and the gas flow of the carrier gas, the reaction gas (at least one of the first precursor gas and the second precursor gas), and the doping gas can be controlled as needed. The air inlet pipes 6 of the above three structures can select one or more to be connected to the central air inlet assembly 4 and the peripheral air inlet assembly 5 as needed. For example, the air inlet pipe 6 of structure three can be selected to be connected to the central air inlet assembly 4, and the air inlet pipe 6 of structure one can be selected to be connected to the peripheral air inlet assembly 5.

[0058] In some embodiments, the doping gas may be NO, N 2 O、N 2 For any of the doping gases, the flow rate of the doping gas can be set as needed, for example, it can be 0.5% of the carrier gas flow rate. When the carrier gas is 40 SLM, the doping gas is 0.2 SLM, and there is no limitation.

[0059] It is understandable that when a doping source is not needed, the carrier gas can be directly introduced into the reaction gas or the reaction gas can be introduced into the carrier gas. The compounds of Group III and Group V or the compounds of Group II and Group VI transported by the carrier gas undergo chemical reactions in the reaction chamber 2 under a high temperature environment. At this time, the air intake pipeline 6 of the second structure can be selected to be connected to the central air intake assembly 4, and the product of the chemical reaction is deposited on the wafer 32 placed on the wafer carrier 31 to form a thin film. The airflow introduced into the reaction chamber 2 by the peripheral air intake assembly 5 can press down at least part of the airflow introduced into the reaction chamber 2 by the central air intake assembly 4 and blow it toward the wafer carrier 31.

[0060] Please refer to Figure 1 The chamber cover 1 is arranged above the reaction chamber 2, and the chamber cover 1 includes a central air inlet component 4, a cooling component 8, and a peripheral air inlet component 5 arranged around the central air inlet component 4, the central air inlet component 4 is used to blow the reaction gas into the reaction chamber 2, the peripheral air inlet component 5 is used to blow the carrier gas into the reaction chamber 2, and the cooling component 8 includes a cooling channel 81, and the cooling channel 81 is at least partially arranged at the edges of the central air inlet component 4 and the peripheral air inlet component 5.

[0061] A through hole 11 penetrating the upper and lower surfaces of the chamber cover 1 is provided in the center of the chamber cover 1 for the central air inlet assembly 4 to pass through. The central air inlet assembly 4 is provided in the center of the chamber cover 1 and extends into the reaction chamber 2. Specifically, the central air inlet assembly 4 extends into the reaction chamber 2 and extends a preset distance along the rotation center axis of the base 3, and the central air inlet assembly 4 can exhaust air into the surrounding reaction chamber 2. In one embodiment, the preset distance, i.e., the height, of the central air inlet assembly 4 extending into the reaction chamber 2 can be selected to be 20-200 mm, and the distance between the bottom of the central air inlet assembly 4 and the upper surface of the base 3 can be selected to be 2-80 mm. It can be understood that in other embodiments, the height of the central air inlet assembly 4 extending into the reaction chamber 2 and the distance between the bottom and the upper surface of the base 3 can also be other values.

[0062] See also Figure 7 The central air inlet assembly 4 includes a first air outlet 41 opened on the bottom surface of the chamber cover 1 and facing the reaction chamber 2, and the airflow flows into the reaction chamber 2 from the first air outlet 41. In some embodiments, the central air inlet assembly 4 includes a plurality of first air inlet channels 42, and each first air inlet channel 42 is provided with a plurality of first air outlets 41.

[0063] A first air inlet channel 42 of the central air inlet component 4 is separately connected to an air inlet pipeline 6, and all first air inlet channels 42 are connected to the air inlet pipeline 6, a carrier gas output member 52 of the peripheral air inlet component 5 is separately connected to an air inlet pipeline 6, and all carrier gas output members 52 are connected to the air inlet pipeline 6. In this way, the gas flow rate in each first air inlet channel 42 / carrier gas output member 52 can be controlled by the controller, so that the independent air intake of each carrier gas output member 52 can be achieved. Further, the gas flow rate of different gases in the mixed gas can be controlled, thereby changing the volume proportion of different gases. The gas can be respectively delivered to the central air inlet component 4 and the peripheral air inlet component 5 through the air inlet pipeline 6. In other embodiments, the epitaxial device also includes a gas source, and the gas can be input into the reaction chamber 2 by delivering the gas source into the air inlet pipeline 6.

[0064] In one embodiment, see Figure 7 , Figure 8The central air intake assembly 4 is in the shape of a multi-layer sleeve, including an upper vertical section 48 and a lower horizontal section 49, wherein the vertical section 48 passes through the chamber cover 1, and the horizontal section 49 is arranged in the reaction chamber 2. In some embodiments, the distance between the horizontal section 49 and the chamber cover 1 is 0-10 mm. When the horizontal section 49 is close to the chamber cover 1, the gas ejected from the horizontal section 49 can purge the chamber cover 1 from the horizontal direction to prevent particles from falling. The central air intake assembly 4 includes a plurality of first air intake channels 42, and the first air intake channels 42 include vertical channels 46 and horizontal channels 47 that are interconnected, wherein a plurality of vertical channels 46 are coaxially arranged radially around the central axis of the central air intake assembly 4, and the vertical channels 46 are arranged in the chamber cover 1, and the horizontal channels 47 leave the chamber cover 1 and extend into the reaction chamber 2, and the gas first flows into the vertical channel 46, and then turns and flows out along the horizontal channel 47 after colliding with the channel wall. After the gas enters the vertical channel 46 of the central air intake component 4, it is buffered and then discharged horizontally, so that it is evenly mixed in the horizontal direction. This makes the airflow more uniform and the film-forming effect better.

[0065] In one embodiment, the outer surface of the vertical section 48 and the outer surface of the horizontal section 49 are both cylindrical, and the diameter of the former is smaller than that of the latter.

[0066] In one embodiment, except for the centralmost vertical channel 46 which is a cylindrical channel, the other vertical channels are coaxially arranged in annular shapes, and each vertical channel 46 is connected to an air intake pipe 6, so that the gas flow or cutoff of each vertical channel 46 can be individually controlled.

[0067] 11. In one embodiment, see Figure 5 , Figure 6The horizontal section 49 is stacked up and down, and is divided into the first layer 421, the second layer 422, the third layer 423, the fourth layer 424, the fifth layer 425, the sixth layer 426, and the seventh layer 427 from bottom to top. Each first air inlet channel 42 includes a vertical channel 46 disposed in the vertical section 48 and a plurality of horizontal channels 47 disposed in the horizontal section 49 and connected with the vertical channel 46. The plurality of horizontal channels 47 are all located in the same layer of the horizontal section 49. The horizontal channels 47 in the same layer are all distributed along the radial direction of the central air inlet assembly 4 and are connected to each other through the bottom of the same vertical channel 46. Each horizontal channel 47 is provided with a plurality of first air outlet holes 41 distributed at equal intervals on the outer peripheral surface of the horizontal section 49. The gas flowing into the vertical channel 46 of the first air inlet channel 42 eventually flows out from different first air outlet holes 41 in the same layer of the horizontal section 49. The multiple first air outlet holes 41 of the same first air inlet channel 42 are evenly distributed along the outer peripheral surface of the central air inlet component 4. In some embodiments, the first air outlet holes 41 of different first air inlet channels 42 are the same in number and aligned up and down, and are evenly distributed up and down along the outer surface of the central air inlet component 4. It can be understood that the horizontal channels 47 of different first air inlet channels 42 are located in different layers, so that the gas can flow out from the first air outlet holes 41 of different layers, for example, ethylene flows out from the first layer 421 to the third layer 423, and TCS flows out from the third layer 423 to the sixth layer 426. In one embodiment, different first air inlet channels 42 are separated from each other by a partition 45, and further, the vertical channels 46 and the vertical channels 46, the horizontal channels 47 and the horizontal channels 47, and the vertical channels 46 and the horizontal channels 47 are separated by a partition 45. In one embodiment, the first air inlet channel 42 extending into the reaction chamber 2 is arranged horizontally, so that the gas flowing in through the first air inlet channel 42 flows into the reaction chamber 2 in a horizontal direction. It can be understood that each horizontal channel 47 is provided with a plurality of first air outlet holes 41 arranged at equal intervals along the circumference of the central air intake assembly 4, and the horizontal channels 47 of the horizontal section 49 are arranged radially from the center and separated from each other by the partition 45. Optionally, the gas flow rate of each first air intake channel 42 is 20-50 SLM. In some other embodiments, the gas flow rate of the first air intake channel 42 is 5-20 SLM or 50 SLM-100 SLM, which is not limited.

[0068] Please refer to Figure 2 , Fig. 9 , Fig.10, the peripheral air inlet assembly 5 is penetrated on the chamber cover 1, and the peripheral air inlet assembly 5 surrounds the central axis of the central air inlet assembly 4 and is spaced apart from the central air inlet assembly 4. In one embodiment, the peripheral air inlet assembly 5 is arranged in a ring on the chamber cover 1. Optionally, the central air inlet assembly 4 and the peripheral air inlet assembly 5 are spaced apart by 50mm-500mm in the horizontal direction, further, 60mm-200mm can be selected, and further, 80mm-120mm can be selected. The peripheral air inlet assembly 5 includes a plurality of top air outlet holes 51 opened on the bottom surface of the chamber cover 1 toward the reaction chamber 2 and used to spray out the carrier gas, and the top air outlet holes 51 are evenly arranged on a plurality of concentric circles distributed outward from the rotation center axis c of the base 3. It should be noted that being evenly arranged on the plurality of concentric circles means that the top air outlet holes 51 on each are evenly distributed.

[0069] In some embodiments, the number of the top air outlet holes 51 on each concentric circle is the same, and the top air outlet holes 51 are radially distributed along multiple uniformly distributed radial directions.

[0070] In some embodiments, the top air outlet holes 51 distributed on adjacent concentric circles along the same radial direction are at equal distances.

[0071] The peripheral air inlet assembly 5 includes a plurality of carrier gas output components 52 that can independently inlet air, and each carrier gas output component 52 includes the top air outlet holes 51 on one or more adjacent concentric circles. One or more carrier gas output components 52 correspond to one area on the workpiece to be processed, and the film growth rate of the area on the workpiece to be processed corresponding to the carrier gas output component 52 can be adjusted by changing the gas flow rate of the carrier gas output component 52. It should be noted that one or more carrier gas output components 52 correspond to one area on the workpiece to be processed, which means that the airflow ejected from each carrier gas output component 52 can affect the film growth rate of a specified area on the workpiece to be processed. In some embodiments, it can be understood that the ejected airflow can cover the area on the workpiece to be processed. All areas on the workpiece to be processed have corresponding carrier gas output components 52, and the film growth rate of the specified area can be affected by adjusting the carrier gas flow rate of any carrier gas output component 52.

[0072] In one embodiment, the peripheral gas inlet assembly 5 includes a plurality of carrier gas output components 52 , each of which includes a circle of top gas outlet holes 51 , through which the gas can flow into the reaction chamber 2 .

[0073] In some embodiments, each carrier gas output member 52 includes two or three adjacent circles of top air inlet holes 51 . The number of the top air inlet holes 51 can be set as required and is not limited.

[0074] In some embodiments, a central axis of the top air outlet 51 is perpendicular to a central axis of the horizontal channel 47 .

[0075] In some embodiments, the top air outlet 51 is disposed between the rotation center axis of the wafer carrier 31 and the vertical line where the edge of the workpiece to be processed is located.

[0076] In one embodiment, the top air outlet 51 and the first air outlet 41 form a certain angle, which can be 30°-150°, and further can be 45°, 60°, 90°, 120°, 130°. The carrier gas vertically ejected from the peripheral air inlet assembly 5 can press down the reaction gas introduced into the reaction chamber 2 by the central air inlet assembly 4 and make the airflow introduced into the reaction chamber 2 by the central air inlet assembly 4 blow toward the wafer carrier 31 in a parabolic shape.

[0077] In one embodiment, the first air outlet 41 is the outlet of the first air inlet channel 42, and the first air outlet 41 of the central air inlet component 4 is 45°-90° with the vertical direction. Further, it can be 45°, 60°, or 90°.

[0078] In one embodiment, a plurality of carrier gas output members 52 are arranged radially around the center of the chamber cover 1 and spaced apart from each other. In one embodiment, a plurality of carrier gas output members 52 are arranged radially from the center to the surroundings. In one embodiment, the peripheral air inlet assembly 5 includes a plurality of carrier gas output members arranged radially along the chamber cover 1. The plurality of carrier gas output members 52 are densely blown to effectively prevent the uneven distribution of gas flow in the reaction chamber 2. The chamber cover 1 is densely covered with carrier gas output members 52 to prevent particles from forming on the chamber cover 1 and falling on the wafer 32.

[0079] In one embodiment, the top air outlet 51 is a spray port, the shape of the spray port is a hole or a slit, the number of the spray ports is 10 to 500, and the spray ports are distributed in a circumference or in an array.

[0080] 12. In some embodiments, the first air outlet 41 is a round hole or a square hole, and the aperture is 0.5 mm-20 mm, further, the aperture is 1 mm-5 mm, and further, it can be selected as 2 mm. It is understandable that the aperture of the first air outlet 41 can also be selected as other values. The aperture of the top air outlet 51 is 0.5 mm-10 mm, further, it can be selected as 1 mm-3 mm, and further, it can be selected as 2 mm, and the aperture of the top air outlet 51 can also be selected as other values. The peripheral air inlet assembly 5 is arranged between the rotation center axis of the base and the rotation center axis of the carrier plate 31.

[0081] Please refer to Fig. 9 , Fig.10The peripheral air inlet assembly 5 includes a plurality of carrier gas output components 52 that can independently inlet air. The carrier gas blown out by each carrier gas output component 52 collides with the reaction gas to change the film growth rate of the area corresponding to the carrier gas output component 52 on the workpiece to be processed.

[0082] Each carrier gas output member 52 includes a main channel 53 and a secondary channel 54, the main channel 53 is fluidically connected with the secondary channel 54, and the main channel 53 and the secondary channel 54 are both arranged in the chamber cover 1, and the gas flow first enters the main channel 53 and then flows into the plurality of secondary channels 54, and finally flows into the reaction chamber 2 from the secondary channels 54. Specifically, the plurality of main channels 53 are arranged radially outward from the center of the chamber cover 1, for example, from the inside to the outside along the radial direction, they are divided into a first main channel 531, a second main channel 532, and a third main channel 533, and a fourth main channel 534, a fifth main channel 535, and a sixth main channel 536 are arranged along the opposite radial direction. In this embodiment, the peripheral air inlet assembly 5 includes an inner carrier gas output member 521, an intermediate carrier gas output member 522, and an outer carrier gas output member 523. The inner carrier gas output member 521 includes a first main channel 531 and a fourth main channel 534. The intermediate carrier gas output member 522 includes a second main channel 532 and a fifth main channel 535. The outer carrier gas output member 523 includes a third main channel 533 and a sixth main channel 536. The first main channel 531 and the fourth main channel 534 are symmetrical about the rotation center axis of the base 3, the second main channel 532 and the fifth main channel 535 are symmetrical about the rotation center axis of the base 3, and the third main channel 533 and the sixth main channel 536 are symmetrical about the rotation center axis of the base 3. Such an arrangement allows the airflow to pass through the main channel 53 first and then pass into the secondary channel 54 more evenly, thereby ensuring the consistency of the airflow flow at various locations.

[0083] See also Figure 2 , Fig.11, the workpiece to be processed includes multiple radial regions, a radius of the surface of the workpiece to be processed is divided into multiple continuous line segments, each of the line segments rotates around the center of the workpiece to be processed to form multiple adjacent non-overlapping concentric regions, and the concentric regions are the radial regions or radial concentric regions. Each radial region corresponds to one or more of the carrier gas output parts 52; in this embodiment, the workpiece to be processed is a wafer 32, and the surface of the wafer 32 is divided into an outer ring region 321, a middle ring region 322, and an inner ring region 323 from the outside to the inside. The peripheral air inlet component 5 includes three carrier gas output components 52 from the inside to the outside, namely, an inner carrier gas output component 521 corresponding to the outer circle area 321, a middle carrier gas output component 522 corresponding to the middle circle area 322, and an outer carrier gas output component 523 corresponding to the inner circle area 323. When the gas flow rate of the inner carrier gas output component 521 is increased, the film growth rate of the outer circle area 321 decreases; when the gas flow rate of the middle carrier gas output component 522 is increased, the film growth rate of the middle circle area 322 decreases; when the gas flow rate of the outer carrier gas output component 523 is increased, the film growth rate of the inner circle area 323 decreases; similarly, when the gas flow rates of the inner carrier gas output component 521, the middle carrier gas output component 522, and the outer carrier gas output component 523 are reduced, the film growth rates of the corresponding radial areas of the surface of the workpiece to be processed are respectively increased. The carrier gas ejected from the peripheral air inlet assembly 5 can press down at least part of the reaction gas ejected from the central air inlet assembly 4. When thin film growth is carried out in the reaction chamber 2, the base 3 rotates together with the wafer carrier plate 31, and the wafer carrier plate 31 rotates around the rotation center axis of the wafer carrier plate 31. The carrier gas blown out from the peripheral air inlet assembly 5 can collide with the reaction gas to change the growth rate of the thin film on the workpiece to be processed. By increasing the gas flow rate of any one of the carrier gas output components 52, the film growth rate of the radial area of ​​the workpiece to be processed corresponding to the carrier gas output component 52 can be reduced. Reducing the gas flow rate of any one of the carrier gas output components 52 can increase the film growth rate of the radial area of ​​the workpiece to be processed corresponding to the carrier gas output component 52. It can be understood that the length of the multiple continuous line segments or the width of the radial area is not limited. As an example, it can be divided into multiple line segments, for example, a radius of 9 cm is divided into 3 line segments, each 3 cm. As another example, please refer to Fig.12 , can be divided into multiple unequal line segments, for example, a radius of 11 cm can be divided from the inside to the outside into a 2 cm line segment, a 2 cm line segment, a 3 cm line segment and a 4 cm line segment. The corresponding airflow coverage area of ​​the carrier gas output member 52 also needs to be adjusted so that the airflow ejected by each carrier gas output member 52 can cover the concentric area formed by a line segment rotating around the center of the workpiece.

[0084] In one embodiment, the main channels 53 are arranged in a surrounding manner, and each carrier gas output member 52 includes at least two main channels 53 , and the main channels 53 are symmetrically arranged about the rotation center axis of the base 3 .

[0085] Please refer to Fig. 9 , Fig.10 , multiple main channels 53 are evenly distributed on the concentric circles around the rotation center axis of the base 3, that is, multiple main channels 53 are distributed at different radii. For example, 4 first main channels 531 are arranged along the circumference at a radius of 100 mm, 4 second main channels 532 are arranged along the circumference at a radius of 200 mm, and 4 third main channels 533 are arranged along the circumference at a radius of 300 mm. It can be understood that the radius size and the number of circumferential main channels 53 at the same radius are not limited. Further, a secondary channel 54 is connected below the main channel 53. Further, each main channel 53 is connected to multiple secondary channels 54. In some embodiments, a connecting cavity 55 is provided between the main channel 53 and the secondary channel 54, and the main channel 53 and the secondary channel 54 are connected to the connecting cavity 55 from the upper and lower directions respectively. Optionally, multiple main channels 53 can be distributed at equal intervals along the radial direction, with a spacing of 10-100 mm. It is understandable that each carrier gas output part 52 is individually connected to an air inlet pipeline 6 (not shown), and the air inlet pipeline 6 is connected to an external air source. The air inlet pipeline 6 includes a flow controller electrically connected to the controller, and the controller controls each carrier gas output part 52 to individually inlet air. Such a setting can adjust the air flow field in the specified area and improve the uniformity of the film thickness. It is understandable that in some embodiments, the boundary of the peripheral air inlet component 5 is determined by the secondary channel 54, and the circumscribed circle of the outermost secondary channel 54 is the boundary of the peripheral air inlet component 5, that is, the outer boundary of the vertical projection 56 of the peripheral air inlet component 5. In some embodiments, the boundary of the peripheral air inlet component 5 is determined by the structural member where the top air outlet 51 is located, and the outermost contour of the structural member where the top air outlet 51 is opened is the boundary of the peripheral air inlet component 5.

[0086] The connecting cavity 55 is annularly arranged. In some embodiments, a plurality of spaced secondary channels 54 are arranged below the connecting cavity 55. Each secondary channel 54 is arranged radially outward along a plurality of evenly distributed radial directions. In this way, the airflow of the peripheral air inlet assembly 5 is more dispersed, and the uniformity of the reaction gas is improved by pressing down the reaction gas. In some embodiments, one secondary channel 54 is arranged below the connecting cavity 55. One secondary channel 54 is also evenly distributed. By setting one secondary channel 54, the carrier gas can be more concentrated when blowing downward, the downward pressure is more efficient, and the adjustment effect is more obvious.

[0087] In one embodiment, the secondary channels 54 are distributed in multiple areas, see Fig. 9 , Fig.10, the secondary channels 54 are distributed in three areas, the areas are annular areas, multiple secondary channels 54 are distributed in each annular area, and the radial spacing between adjacent secondary channels 54 in each annular area is smaller than the radial spacing between adjacent secondary channels 54 in different annular areas. In this way, when adjusting the gas flow of the carrier gas output part 52, the mutual influence of the gas flow in different annular areas can be minimized, so that the gas flow field of the area to be adjusted can be effectively adjusted, thereby ensuring the uniformity of the gas flow field in the overall area. It can be understood that the radial spacing can be selected to be 1-20mm, and the annular areas are 2, 4, 5, etc., and are not limited.

[0088] The air outlet of the secondary channel 54 is the top air outlet 51 . The directions of the main channel 53 and the secondary channel 54 can be changed as needed. In the present embodiment, they are both in the vertical direction.

[0089] In one embodiment, the peripheral air intake component 5 is arranged obliquely above the wafer carrier plate 31, that is, in the horizontal direction, the peripheral air intake component 5 is arranged between the central air intake component 4 and the wafer carrier plate 31, so that the airflow angle can be better controlled and the airflow can be better blown to the chip 32.

[0090] In some embodiments, see Figure 3 The central air inlet component 4 is arranged in the center of the reaction chamber 2, and the wafer carrier plate 31 is arranged around the central air inlet component 4. The airflow of the central air inlet component 4 is horizontally sprayed toward the wafer carrier plate 31. A gap is left between the base 3 and the side wall 21, and the gap serves as an exhaust channel. The exhaust channel is connected to the exhaust pump, and the exhaust pump is electrically connected to the controller. The exhaust pump can extract part of the reaction products and unreacted gases from the exhaust channel out of the reaction chamber 2.

[0091] In one embodiment, the air flow rate / flow rate of the central air inlet assembly 4 and the peripheral air inlet assembly 5 can be adjusted, so that the shape of the parabola can be changed, so that the reaction gas is better deposited on the surface of the wafer 32 after the reaction. It should be noted that the central air inlet assembly 4 and the peripheral air inlet assembly 5 have the ability to independently control the internal flow rate. Although not shown, a plurality of flow controllers are arranged to be fluidly connected to the first air inlet channel 42 and the carrier gas output member 52 to independently adjust the flow rate and flow rate in the corresponding air inlet channel. It can be understood that a gas pipeline can be arranged to be connected to the air inlet of each air inlet channel to transport the gas into each air inlet channel, and pass into the reaction chamber 2 through the air outlet of the air inlet channel.

[0092] Please refer to Figure 3 , Fig.13The gas flowing into the reaction chamber 2 from the central air inlet assembly 4 is divided into two trajectories when it is blown onto the wafer carrier plate 31. The first section of the airflow moves along the ejection direction and generally presents a slightly downward straight trajectory. The second section is the airflow that meets the carrier gas flowing into the reaction chamber 2 from the peripheral air inlet assembly 5 and is pressed down and dispersed. Due to the increased impact force of the downward pressure, the trajectory of the second section is more inclined downward than the trajectory of the first section, generally in the form of a parabola, and is dispersed into a finer airflow, making the film growth uniformity better. However, the dispersion will also affect the deposition of reactants on the wafer surface and reduce the film growth rate. As the concentration of the reaction gas ejected from the central air inlet component 4 decreases along the forward direction with the continuous chemical reaction, the film growth rate of the wafer is the highest on the side closest to the central air inlet component 4, and the farther away from the central air inlet component 4, the lower the film growth rate of the wafer. At the same time, as the wafer carrier 31 continuously rotates with the wafer, the area on the wafer closest to the central air inlet component 4 will theoretically be repeatedly deposited with more reactants after the reaction of the reaction gas, and the area far away from the central air inlet component 4 will be repeatedly deposited with fewer reactants or even no repeated deposition, making the film growth in various parts of the wafer very uneven. The peripheral air inlet component 5 provided in the reactor 100 of the present invention can press down the reaction gas ejected from the central air inlet component 4, at least partially disperse the airflow of the reaction gas, and make the reactants flowing to the surface of the wafer more uniform, thereby making the film growth rate of each area on the final wafer more uniform. By using carrier gas to press down and disperse the reaction gas, on the one hand, the normal reaction of the preset ratio of reaction gas will not be destroyed; on the other hand, if the uniformity is adjusted by reaction gas, it involves a series of chemical reactions and flow field control, and the adjustment method is very complicated. Compared with the scheme of adjusting by reaction gas, pressing down by carrier gas can save the amount of reaction gas and will not waste reaction gas. At the same time, by adding a carrier gas output component 52 at the top, the adjustment method can be simplified, greatly reducing the difficulty of adjusting the uniformity of the film.

[0093] It should be noted that although the carrier gas of the peripheral air intake component 5 can press down or collide with the reaction gas ejected from the central air intake component 4, part of the reaction gas will still flow through the gap of the carrier gas ejected from the peripheral air intake component 5, that is, this part of the airflow is not impacted by the downward airflow, but reacts and deposits naturally, or is directly drawn out of the reaction chamber 2 without reacting.

[0094] See also Fig.15 , Fig.16 , Fig.17The cavity cover 1 includes a cooling assembly 8, and the cooling assembly 8 includes a cooling channel 81. The cooling channel 81 is at least partially arranged at the edge of the central air intake assembly 4 and the peripheral air intake assembly 5. Due to the presence of some cavities at the central air intake assembly 4 and the peripheral air intake assembly 5, local high temperatures are easily formed. The cooling channel 81 is at least partially arranged at the edge of the central air intake assembly 4 and the peripheral air intake assembly 5, which can effectively cool the area of ​​the central air intake assembly 4 and the peripheral air intake assembly 5, thereby improving the overall cooling efficiency of the cavity cover 1. It can be understood that in some embodiments, the cooling channel 81 is arranged around the central air intake assembly 4 and the peripheral air intake assembly 5.

[0095] In one embodiment, the cooling channel 81 includes at least two cooling channels 81 , and the two cooling channels 81 are symmetrically arranged.

[0096] In one embodiment, a baffle 57 is provided around the main channel 53 of the peripheral air intake assembly 5 , and the baffle 57 extends from one end of the cavity cover 1 to one end of the through hole 11 , and extends from the other end of the through hole 11 to the edge of the cavity cover 1 .

[0097] In one embodiment, the cavity cover 1 is provided with a through hole 11 penetrating the upper and lower surfaces of the cavity cover 1, and at least a portion of the outer wall of the central air inlet component 4 and / or the peripheral wall of the through hole 11 constitutes the inner wall of the cooling channel 81. Specifically, the baffle of the central air inlet component 4 constitutes the inner wall of the cooling channel 81, or at least a portion of the outer wall of the peripheral air inlet component 5 constitutes the inner wall of the cooling channel 81.

[0098] In one embodiment, the cooling channel 81 includes a flow portion 82 and a bending and turning portion 83. The cooling channel 81 is provided with a partition plate 86. The partition plates 86 are arranged at intervals, and different flow portions 82 are separated by the partition plates 86. Further, the distances between adjacent partition plates 86 and the baffle 57 are different. One of the two adjacent partition plates abuts against the baffle 57, and the other is arranged at intervals from the baffle 57. In this way, the three continuous partition plates 86 and the baffle 57 constitute the bending and turning portion 83. One bending and turning portion 83 is connected between every two flow portions 82, and the multiple flow portions 82 and the multiple bending and turning portions 83 together constitute the serpentine cooling channel 81. Further, the outer wall of the peripheral air intake component 4 constitutes a part of the inner wall of the bending and turning portion 83. Specifically, the outer wall of the baffle 57 constitutes a part of the inner wall of the bending and turning portion 83. In one embodiment, cooling water is passed into the cooling channel 81, and the cooling water can be selected as high-purity water. The chamber cover 1 is provided with a water inlet 84 and a water outlet 85, which are respectively connected to a water pipeline (not shown). Cooling water flows from the water inlet 84 into the cooling channel 81 and finally flows out from the water outlet 85 to take away heat.

[0099] In one embodiment, the cooling channel is in an arc shape, and the curvature of the outer wall of the through hole is the same as the curvature of the arc shape.

[0100] Pyrolysis can occur in or near the boundary region at an intermediate temperature between the temperature of the gas ejection position and the temperature of the susceptor 3 and / or the wafer carrier plate 31. When the chamber cover 1 is cooled, the temperature of the gas ejection position is lower, so that the reaction of the reaction gas is closer to the position of the susceptor 3, thereby reducing the waste of reaction gas and improving the film growth efficiency.

[0101] Please refer to Figure 2 , Fig.10 In one embodiment, the secondary channel 54 is the top air outlet 51, the central axis of the top air outlet 51 is coplanar with the central axis of the first air outlet 41, and the angle between the two central axes is α, so that the carrier gas b ejected from the top air outlet 51 can press down the reaction gas a ejected from the first air outlet 41 and blow it toward the workpiece to be processed. The central axis of the top air outlet 51 is coplanar with the central axis of the first air outlet 41, and the angle between the two central axes is α, 30°≤α≤150°, so that the airflow ejected from the peripheral air inlet component 5 can be more accurately blown at the center of the airflow ejected from the central air inlet component 4, with higher efficiency and better downward pressure effect.

[0102] When the gas is ejected from the central air inlet assembly 4 or the peripheral air inlet assembly 5, it will diffuse in all directions along the forward direction. As the gas injection distance increases, an airflow with a wider and wider cross-section will be formed. The edges of the airflows in the same direction contact each other and finally form a continuous air curtain. At this time, the central axis of the top air outlet 51 does not need to be coplanar with the central axis of the first air outlet 41. The airflow b ejected from the peripheral air inlet assembly 5 can also press down the airflow a ejected from the central air inlet assembly 4 and make the airflow a ejected from the central air inlet assembly 4 parabolically blow toward the carrier plate 31. It should be noted that the airflow field uniformity of horizontal air intake is insufficient, the film thickness is uneven, and the chamber cover 1 is prone to generate particulate matter. Compared with horizontal air intake, vertical air intake can improve the uniformity of horizontal air intake, and the particulate matter problem is reduced, but the gas utilization rate itself is low and the film formation is slow, which greatly hinders the production efficiency. In this application, the reaction gas is blown toward the carrier plate 31 in a parabolic shape as a whole by the carrier gas pressing down the reaction gas. Compared with vertical air intake, it further solves the problem of particle falling, and at the same time has the advantages of high film forming efficiency and more uniform air flow field.

[0103] In order to further pressurize the airflow ejected from the central air inlet component 4 and blow it toward the wafer carrier plate 31, in one embodiment, the peripheral air inlet component 5 includes a plurality of carrier gas output components 52 radially arranged along the chamber cover 1, and each carrier gas output component 52 is connected to at least one air inlet pipeline 6, which can control the air intake individually, and the reaction gas airflow ejected from the central air inlet component 4 is blown downward from above by the carrier gas airflow ejected from the plurality of carrier gas output components 52 on the flow path. Such a setting can, on the one hand, press down and break up the reaction gas airflow to make it more uniform, and on the other hand, it can conveniently adjust the gas flow in different carrier gas output components 52 in sections to improve the uniformity of film thickness.

[0104] See also Figure 3 , Fig.14 In one embodiment, the peripheral air inlet assembly 5 is located above the workpiece to be processed, the width of the vertical projection 56 of the peripheral air inlet assembly 5 is equal to the radius of the workpiece to be processed, and the vertical projection 56 covers the path from the edge of the workpiece to be processed to the center of the workpiece to be processed along the width direction of the vertical projection 56. Such a setting is more efficient than setting it at other positions to concentrate the airflow to the reaction gas above the radius width of the wafer close to the rotation center axis of the base 3, and the film growth rate can be affected very efficiently with the least change in the carrier gas amount. At the same time, because the wafer is constantly rotating, it will not affect the film growth in various areas of the wafer.

[0105] Furthermore, the number of the carrier gas output components 52 of the reactor 100 is the same as the number of the regions of the workpiece to be processed and they correspond one to one, and each of the carrier gas output components 52 is located directly above the corresponding region of the workpiece to be processed.

[0106] In some embodiments, see Figure 3 , the workpiece to be processed extends radially inward from the edge to the center and is divided into n radial regions in sequence, wherein the i-th radial region is annular, the n-th radial region is circular, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output parts 52 include N and are arranged in sequence from the inside to the outside, the i-th carrier gas output part 52 corresponds to the reaction gas of the m-th radial region, wherein 1≤I≤N, N=n, m=I, N, m, and I are natural numbers. When the wafer carrier 31 rotates around the rotation center axis of the wafer carrier 31, the film growth rate of the radial region of the m-th workpiece to be processed corresponding to the carrier gas output part 52 can be reduced by increasing the gas flow rate of the i-th carrier gas output part 52. Reducing the gas flow rate of the i-th carrier gas output part 52 can increase the film growth rate of the radial region of the m-th workpiece to be processed corresponding to the carrier gas output part 52.

[0107] It should be noted that each of the carrier gas output components 52 includes a circle of top gas outlet holes 51. The carrier gas output components 52 include N and are arranged in sequence from the inside to the outside, which means that the top gas outlet holes 51 are arranged one by one in sequence from the inside to the outside. And one of the carrier gas output components 52 corresponds to one radial area of ​​the wafer.

[0108] Conventional epitaxial equipment is provided with two directions of air intake, that is, one of the two reaction gases is set to be horizontally air intake, and the other is set to be vertically air intake. This is to allow the two reaction gases to mix in two directions, so that the reaction gases are mixed more evenly and thus the thin film growth is more even. However, this will not only destroy the reaction of the two reaction gases in a predetermined ratio, but also fail to make targeted adjustments according to the growth conditions of each region of the wafer. The reaction gases of the present application are all ejected from the central air intake assembly, and the peripheral air intake assembly in the other direction only ejects carrier gas, which is dispersed by colliding with the reaction gas so as to be more evenly distributed. At the same time, the peripheral air intake assembly includes a plurality of independent air intake carrier gas output components 52, and each wafer corresponds to one or more carrier gas output components 52. In this way, the thin film growth rate of each region on the wafer surface can be adjusted in a targeted manner by adjusting the gas flow rate of each carrier gas output component 52, thereby controlling the uniformity of the wafer surface to a very high level. At the same time, if the temperature of the cavity cover 1 is too high, it will affect the service life of the cavity cover 1 and it is easy to deform and affect the process reaction. By adding a cooling component 8 to cool the cavity cover 1, and at the same time setting the cooling component 8 at least partially at the edge of the central air intake component 4 and the peripheral air intake component 5, the central air intake component 4 and the peripheral air intake component 5 can be effectively cooled, thereby improving the overall cooling efficiency of the cavity cover 1.

[0109] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A reactor of an epitaxial device, characterized in that: include: A reaction chamber, the reaction chamber is defined by a chamber cover, a side wall and a base of the reactor, a rotatable base is provided in the reaction chamber, a plurality of wafer carriers for carrying workpieces to be processed are provided on the base, and a heating device for heating the base and the wafer carriers is also provided in the reaction chamber; a chamber cover, arranged above the reaction chamber, the chamber cover comprising a central air inlet assembly, a cooling assembly, and a peripheral air inlet assembly arranged around the central air inlet assembly, the central air inlet assembly being used to blow out reaction gas into the reaction chamber, the peripheral air inlet assembly being used to blow out carrier gas into the reaction chamber, the cooling assembly comprising a cooling channel, the cooling channel being at least partially arranged at the edges of the central air inlet assembly and the peripheral air inlet assembly; When thin film growth is carried out in the reaction chamber, the carrier gas blown out by the peripheral gas inlet assembly can collide with the reaction gas to change the growth speed of the thin film on the workpiece to be processed.

2. The reactor of an epitaxial device according to claim 1, characterized in that: The peripheral air inlet assembly is arranged between the rotation center axis of the base and the rotation center axis of the wafer carrier.

3. The reactor of an epitaxial device according to claim 1, characterized in that: The peripheral air inlet assembly includes a plurality of carrier gas output parts capable of independently inletting air. The collision of the carrier gas blown out by each carrier gas output part with the reaction gas can change the film growth rate of the area corresponding to the carrier gas output part on the workpiece to be processed.

4. The reactor of an epitaxial device according to claim 3, characterized in that: The central air inlet assembly includes a plurality of top air outlet holes opened on the bottom surface of the chamber cover toward the reaction chamber and used for spraying carrier gas. The top air outlet holes are evenly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the base, and each of the carrier gas output components includes the top air outlet holes on one or more adjacent concentric circles.

5. The reactor of an epitaxial device according to claim 4, characterized in that: The central air intake assembly includes a first air intake channel, the first air intake channel includes a horizontal channel, and the central axis of the top air outlet is perpendicular to the central axis of the horizontal channel.

6. The reactor of an epitaxial device according to claim 1, characterized in that: At least a portion of the outer walls of the central air intake component and the peripheral air intake component constitute the inner wall of the cooling channel.

7. The reactor of an epitaxial device according to claim 1, characterized in that: A through hole is provided in the center of the cavity cover, and at least a portion of the outer wall of the peripheral air inlet assembly and the peripheral wall of the through hole constitutes the inner wall of the cooling channel.

8. The reactor of an epitaxial device according to claim 1, characterized in that: The cooling channel comprises a flow direction portion and a bending and turning portion, and the outer wall of the peripheral air intake component constitutes a part of the inner wall of the bending and turning portion.

9. The reactor of an epitaxial device according to claim 1, characterized in that: The cooling assembly comprises at least two cooling channels, the cooling channels are in an arc shape, and the curvature of the outer wall of the through hole is the same as the curvature of the arc.

10. An epitaxial device, characterized in that: include: A reactor comprising the epitaxial device according to any one of claims 1 to 9.

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