Method, device and equipment for detecting solid-to-liquid ratio of silicon material of single crystal furnace and storage medium

Abstract

The invention provides a method, a device and equipment for detecting the solid-liquid ratio of a silicon material of a single crystal furnace and a storage medium. The method comprises the following steps: detecting a first volume of a silicon block above a silicon liquid level in a silicon material by adopting a sensor, determining a second volume of a silicon block below the silicon liquid level in the silicon material according to the first volume, the silicon liquid density and the silicon block density, and determining a solid-liquid ratio of the silicon material based on the first volume, the second volume and the total weight of the silicon material; according to the method, the detection accuracy of the solid-to-liquid ratio of the silicon material of the single crystal furnace is improved; according to the method, the detection accuracy of the solid-to-liquid ratio is improved.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal silicon production, and in particular to a method, device, equipment and storage medium for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace. Background Art

[0002] In the single crystal pulling process, melting is a crucial step. By optimizing the melting process, the working time of melt temperature adjustment can be shortened and the crystal pulling efficiency can be improved. In the prior art, in the initial stage of melt temperature adjustment, the power of the main heater and the bottom heater is increased to adjust the temperature in the furnace to a higher temperature, and the power is reduced to stabilize the temperature after the material is melted.

[0003] However, the existing melting process makes it difficult to judge the solid-liquid ratio of the material in the single crystal furnace. When the material block is about to be melted, the power cannot be reduced in time, causing the final temperature of the melt to continue to rise. The temperature needs to be lowered to the appropriate liquid temperature again, wasting a lot of work time.

[0004] Therefore, how to accurately detect the solid-liquid ratio of silicon material in the single crystal furnace is the problem that needs to be solved at present. Summary of the invention

[0005] The embodiments of the present application provide a method, device, equipment and storage medium for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace, so as to solve the problem of low detection accuracy of the existing solid-to-liquid ratio detection method.

[0006] In a first aspect, the present application provides a method for detecting the solid-liquid ratio of silicon material in a single crystal furnace, comprising:

[0007] Using a sensor to detect a first volume of silicon blocks in the silicon material that are above a silicon liquid surface;

[0008] Determining a second volume of silicon blocks in the silicon material below the silicon liquid surface according to the first volume, the silicon liquid density, and the silicon block density;

[0009] A solid-to-liquid ratio of the silicon material is determined based on the first volume, the second volume, and a total weight of the silicon material.

[0010] Optionally, the using a sensor to detect a first volume of silicon blocks above a silicon liquid surface in the silicon material includes:

[0011] Determining a projected area of ​​a silicon block above a silicon liquid surface, and dividing the projected area into a plurality of unit areas;

[0012] For each of the unit areas, a laser sensor is used to detect an average height of the silicon blocks corresponding to the unit area;

[0013] The volume of the silicon block corresponding to each unit area is determined according to the average height of the silicon block and the unit area, and the sum of the volumes of the silicon blocks corresponding to the multiple unit areas is determined as the first volume.

[0014] Optionally, the using a sensor to detect a first volume of silicon blocks above a silicon liquid surface in the silicon material includes:

[0015] Multiple visual sensors are used to photograph the silicon block above the silicon liquid surface from different angles to obtain multiple images;

[0016] Determining depth information of a silicon block above a silicon liquid surface based on parallax of the plurality of images;

[0017] A three-dimensional model of the silicon block above the silicon liquid surface is generated based on the depth information, and the first volume is determined based on the three-dimensional model.

[0018] Optionally, the using a sensor to detect a first volume of silicon blocks above a silicon liquid surface in the silicon material includes:

[0019] A structured light sensor is used to project a preset image onto a silicon block above the silicon liquid surface;

[0020] A visual sensor is used to collect a deformed image of the preset image, a three-dimensional model of the silicon block above the silicon liquid surface is generated based on the deformed image, and the first volume is determined based on the three-dimensional model.

[0021] Optionally, determining a second volume of silicon blocks in the silicon material below the silicon liquid surface according to the first volume, the silicon liquid density, and the silicon block density includes:

[0022] Determining a density difference between the silicon liquid density and the silicon block density;

[0023] The second volume is obtained by multiplying the first volume and the density of the silicon block by the density difference.

[0024] Optionally, determining the solid-liquid ratio of the silicon material based on the first volume, the second volume and the total weight of the silicon material includes:

[0025] Multiplying the sum of the first volume and the second volume by the density of the silicon block to obtain the weight of the silicon block;

[0026] Determining the weight of the silicon liquid based on the weight of the silicon block and the total weight of the silicon material;

[0027] The ratio of the weight of the silicon block to the weight of the silicon liquid is determined as the solid-liquid ratio.

[0028] Optionally, the method further includes:

[0029] Obtain the corresponding relationship between the solid-liquid ratio and the heating power of the single crystal furnace determined based on historical data;

[0030] Based on the corresponding relationship and the solid-liquid ratio, the heating power of the single crystal furnace is adjusted.

[0031] In a second aspect, the present application provides a silicon material solid-liquid ratio detection device for a single crystal furnace, comprising:

[0032] A detection module, configured to detect a first volume of silicon blocks above a silicon liquid level in the silicon material using a sensor;

[0033] A processing module, configured to determine a second volume of silicon blocks in the silicon material that are below the silicon liquid surface according to the first volume, the silicon liquid density, and the silicon block density;

[0034] The processing module is further used to determine the solid-liquid ratio of the silicon material based on the first volume, the second volume and the total weight of the silicon material.

[0035] Optionally, the processing module is further used to determine a projected area of ​​the silicon block above the silicon liquid surface, and divide the projected area into a plurality of unit areas;

[0036] The detection module is further used to detect, for each unit area, an average height of the silicon blocks corresponding to the unit area using a laser sensor;

[0037] The processing module is further used to determine the volume of the silicon blocks corresponding to each unit area according to the average height of the silicon blocks and the unit area, and determine the sum of the volumes of the silicon blocks corresponding to multiple unit areas as the first volume.

[0038] Optionally, the detection module is further used to use multiple visual sensors to photograph the silicon block above the silicon liquid surface from different angles to obtain multiple images;

[0039] The processing module is further used to determine the depth information of the silicon block above the silicon liquid surface based on the parallax of the multiple images;

[0040] The processing module is further used to generate a three-dimensional model of the silicon block above the silicon liquid surface based on the depth information, and determine the first volume based on the three-dimensional model.

[0041] Optionally, the device further comprises: a projection module;

[0042] The projection module is used to project a preset image onto the silicon block above the silicon liquid surface using a structured light sensor;

[0043] The detection module is further used to collect a deformed image of the preset image using a visual sensor;

[0044] The processing module is further used to generate a three-dimensional model of the silicon block above the silicon liquid surface based on the deformed image, and determine the first volume based on the three-dimensional model.

[0045] Optionally, the processing module is further used to determine the density difference between the silicon liquid density and the silicon block density;

[0046] The processing module is further configured to obtain the second volume by dividing the product of the first volume and the density of the silicon block by the density difference.

[0047] Optionally, the processing module is further used to multiply the sum of the first volume and the second volume by the density of the silicon block to obtain the weight of the silicon block;

[0048] The processing module is further used to determine the weight of the silicon liquid based on the weight of the silicon block and the total weight of the silicon material;

[0049] The processing module is further used to determine the ratio of the weight of the silicon block to the weight of the silicon liquid as the solid-liquid ratio.

[0050] Optionally, the device further includes: an acquisition module and a control module;

[0051] The acquisition module is used to acquire the corresponding relationship between the solid-liquid ratio and the heating power of the single crystal furnace determined based on historical data;

[0052] The control module is used to adjust the heating power of the single crystal furnace based on the corresponding relationship and the solid-liquid ratio.

[0053] In a third aspect, the present application provides a silicon material solid-liquid ratio detection device for a single crystal furnace, comprising: a memory, a processor;

[0054] The memory stores computer-executable instructions;

[0055] The processor executes the computer-executable instructions stored in the memory, so that the processor executes the method for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace as described in the first aspect and / or various possible implementations of the first aspect.

[0056] In a fourth aspect, the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores computer execution instructions, and when the computer execution instructions are executed by a processor, the method for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace as described in the first aspect and / or various possible embodiments of the first aspect.

[0057] In a fifth aspect, the present application provides a computer program product, including a computer program, which, when executed by a processor, implements the method for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace as described in the first aspect and / or various possible embodiments of the first aspect.

[0058] The present application provides a method for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace. The method uses a sensor to detect a first volume of silicon blocks above a silicon liquid surface in the silicon material, determines a second volume of silicon blocks below a silicon liquid surface in the silicon material based on the first volume, the silicon liquid density, and the silicon block density, and determines the solid-to-liquid ratio of the silicon material based on the first volume, the second volume, and the total weight of the silicon material. The method improves the detection accuracy of the solid-to-liquid ratio of the silicon material in the single crystal furnace. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0060] Figure 1 Schematic diagram of the process of detecting the solid-liquid ratio of silicon material in a single crystal furnace provided in this application Figure 1 ;

[0061] Figure 2 Schematic diagram of the process of detecting the solid-liquid ratio of silicon material in a single crystal furnace provided in this application Figure 2 ;

[0062] Figure 3 This is a schematic diagram of the structure of the silicon material solid-liquid ratio detection device for the single crystal furnace provided in the present application;

[0063] Figure 4 A schematic diagram of the structure of the electronic device provided in this application.

[0064] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0065] In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in this application will be clearly and completely described below in conjunction with the drawings in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0066] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in sequences other than those illustrated or described herein.

[0067] In the embodiments of the present application, the words "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0068] In the prior art, relevant personnel directly observe the surface state of the melt in the single crystal furnace and estimate the ratio of solid silicon material to liquid silicon material in the melt in combination with the temperature in the single crystal furnace.

[0069] However, the manual estimation of the solid-liquid ratio relies on personal experience, and it is difficult to determine the solid-liquid ratio of the material in the single crystal furnace. In addition, since the solid-liquid ratio cannot be accurately detected, when the material block is about to be melted, the power cannot be reduced in time, resulting in the melt temperature continuing to rise. It needs to be cooled down to the appropriate liquid temperature again, wasting a lot of work time. Therefore, the detection accuracy of the solid-liquid ratio is low, which will reduce the material melting efficiency.

[0070] In view of this, the present application proposes a method for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace. The method detects the volume of silicon blocks above the liquid surface in a relatively static state in real time during the melting process, and based on the fact that the gravity on the silicon blocks is equal to the buoyancy on the silicon blocks, and the magnitude of the buoyancy on the silicon blocks is equal to the weight of the water displaced by the silicon blocks, and the total volume of the silicon blocks is equal to the volume of the silicon blocks above the liquid surface plus the volume of the silicon blocks below the liquid surface. After deduction, the volume of the silicon blocks below the liquid surface can be obtained by multiplying the product of the volume of the silicon blocks above the liquid surface and the density of the silicon blocks by the density difference between the density of the silicon liquid and the density of the silicon blocks, thereby obtaining the total volume and weight of the silicon blocks, and then determining the weight of the silicon liquid based on the weight of the silicon blocks and the total weight of the silicon material. Finally, determining the ratio of the weight of the silicon blocks to the weight of the silicon liquid as the solid-liquid ratio. This method improves the detection accuracy of the solid-to-liquid ratio of silicon material in a single crystal furnace.

[0071] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0072] Figure 1Schematic diagram of the process of detecting the solid-liquid ratio of silicon material in a single crystal furnace provided in the embodiment of the present application Figure 1 , taking the silicon material solid-liquid ratio detection device of the single crystal furnace as an example, Figure 1 As shown, the method for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace provided in this embodiment includes the following steps:

[0073] S101 , using a sensor to detect a first volume of silicon blocks above a silicon liquid surface in the silicon material.

[0074] The sensor may be, for example, a laser sensor, an ultrasonic sensor, a visual sensor, a structured light sensor or the like, and the first volume refers to the volume of an unmelted silicon block above the silicon liquid surface in the silicon material.

[0075] In some embodiments, the projected area of ​​the silicon block above the silicon liquid surface may be determined, and the projected area may be divided into a plurality of unit areas;

[0076] For each unit area, a laser sensor is used to detect the average height of the silicon block corresponding to the unit area;

[0077] The volume of the silicon blocks corresponding to each unit area is determined according to the average height and unit area of ​​the silicon blocks, and the sum of the volumes of the silicon blocks corresponding to multiple unit areas is determined as the first volume.

[0078] In the embodiment of the present application, an image of the silicon liquid surface can be taken from a top-down direction by a CCD camera, and an image processing technique is used to extract the outline of the silicon block from the image, and the projected area of ​​the silicon block is calculated; the projected area is divided into n×m unit areas, and the position and number of each unit area are marked on the image. For each unit area A i , start the corresponding laser sensor to measure the height of the silicon block within the unit area. You can measure it multiple times and take the average value to improve the accuracy. Record each unit area A i The corresponding average height of silicon block h i ; Each unit area A i The corresponding average height of the silicon block h i Multiplying them, we can get the silicon block volume V corresponding to each unit area i ; Finally, the volume V of the silicon block corresponding to all unit areas i Add them together to get the first volume.

[0079] Optionally, multiple visual sensors may be used to photograph the silicon block above the silicon liquid surface from different angles to obtain multiple images;

[0080] Determining depth information of a silicon block above a silicon liquid surface based on parallax of the plurality of images;

[0081] A three-dimensional model of the silicon block above the silicon liquid surface is generated based on the depth information, and a first volume is determined based on the three-dimensional model.

[0082] In an embodiment of the present application, a plurality of visual sensors are installed at different positions above the single crystal furnace body to ensure that the visual sensors can capture silicon blocks above the silicon liquid surface from multiple angles, and a synchronous trigger device is used to ensure that the plurality of visual sensors can capture images at the same time to avoid errors caused by motion blur and time difference; corresponding feature points are found in the plurality of images, and the parallax is calculated based on the position difference of the corresponding feature points in different images, and the depth information of each feature point is calculated based on the parallax and the baseline distance of the visual sensor using the principle of triangulation; point cloud data is generated based on the depth information of each feature point, and the point cloud data includes the spatial coordinates of each feature point, and a three-dimensional reconstruction algorithm is used to convert the point cloud data into a three-dimensional model, and in the three-dimensional model, threshold segmentation is used to segment the silicon block from the background, and finally the three-dimensional model is divided into a plurality of small cubes, and the number of small cubes occupied by the silicon block is counted and multiplied by the volume of each cube to obtain the total volume of the silicon block.

[0083] Optionally, a structured light sensor may be used to project a preset image onto the silicon block above the silicon liquid surface;

[0084] A visual sensor is used to collect a deformed image of a preset image, a three-dimensional model of a silicon block above a silicon liquid surface is generated based on the deformed image, and a first volume is determined based on the three-dimensional model.

[0085] In an embodiment of the present application, the preset image may be, for example, a stripe pattern, a dot pattern, etc. A visual sensor is used to capture a deformed image of the preset image projected onto the silicon block. The depth information of each pixel is calculated based on the deformation of the preset image. For example, for a stripe pattern, the depth can be calculated by analyzing the phase change of the stripes; for a dot pattern, the depth can be calculated by analyzing the grayscale change of the dot matrix; based on the depth information of each pixel, point cloud data containing the spatial coordinates of each pixel is generated, and then the point cloud data is converted into a three-dimensional model. The method for determining the first volume based on the three-dimensional model is similar to the method described in the above embodiment, and will not be repeated here.

[0086] S102: Determine a second volume of silicon blocks in the silicon material that are below the silicon liquid surface according to the first volume, the silicon liquid density, and the silicon block density.

[0087] The volume of the silicon block below the liquid surface can be determined based on the volume of the silicon block above the liquid surface, the density of the silicon liquid and the density of the silicon block.

[0088] It can be understood that by real-time calculation of the volume of silicon material above the liquid surface in a relatively static state during the melting process, using the buoyancy principle, the gravity on the solid is equal to the buoyancy it receives, and the magnitude of the buoyancy is equal to the weight of the water displaced by the object. It is known that the mass of silicon material in a relatively static state is unchanged, so no matter what posture the silicon material is in when floating on liquid silicon, the volume of the liquid discharged is constant and the volume above the liquid surface is constant. The gravity on the silicon block is equal to the weight of the displaced liquid, and the total volume of the silicon block is equal to the sum of the volume of the silicon block above the liquid surface and the volume of the silicon block below the liquid surface. Therefore, the following formula can be derived from the buoyancy formula:

[0089] (ρ 1 ×g)(V 1 +V 2 )=ρ 2 ×g×V 2 (1)

[0090] Among them, ρ 1 is the density of silicon block, ρ 2 is the density of silicon liquid, g is the gravity constant, V 1 is the first volume, V 2 is the second volume, i.e., the volume of the silicon block below the silicon liquid surface.

[0091] Therefore, the following formula can be derived according to the above formula (1) to calculate the second volume:

[0092]

[0093] Among them, ρ 1 is the density of silicon block, ρ 2 is the density of silicon liquid, V 1 is the first volume, V 2 is the second volume, that is, the volume of the silicon block below the silicon liquid surface. S103, based on the first volume, the second volume and the total weight of the silicon material, determine the solid-liquid ratio of the silicon material.

[0094] In the embodiment of the present application, the total weight of the silicon block is determined based on the first volume of the silicon block above the liquid surface and the second volume of the silicon block below the liquid surface, and the weight of the silicon liquid is determined based on the total weight of the silicon material and the total weight of the silicon block, and the solid-liquid ratio is calculated.

[0095] Exemplarily, the total weight of the silicon block can be calculated using the following formula:

[0096] m b =(V 1 +V 2 )×ρ 1 (3)

[0097] Among them, m b is the total weight of silicon block, V 1 is the first volume, V2 is the second volume, ρ 1 is the density of silicon block.

[0098] Then, the total weight of the silicon liquid can be calculated based on the total weight of the silicon blocks and the total weight of the silicon material calculated according to the above formula (3). For example, the total weight of the silicon liquid can be calculated using the following formula:

[0099] m l =m s -m b (4)

[0100] Among them, m l is the weight of silicon liquid, m s is the total weight of silicon material, m b is the total weight of the silicon block.

[0101] Finally, the solid-liquid ratio of the silicon material is calculated using the following formula:

[0102]

[0103] Among them, R is the solid-liquid ratio of silicon material, m b is the total weight of silicon block, m l is the weight of silicone liquid.

[0104] Therefore, the present embodiment determines the solid-liquid ratio of the silicon material based on the first volume, the second volume and the total weight of the silicon material, while the prior art determines the solid-liquid ratio based on the liquid surface temperature. After the melting of the material is completed, due to the large difference between the liquid surface temperature and the temperature at the bottom of the crucible, the high-temperature liquid silicon at the bottom continues to mix with the upper liquid silicon during measurement, causing the liquid surface temperature to continue to fluctuate, and it takes a lot of work hours to stabilize it. Compared with the prior art, the present embodiment can accurately determine the solid-liquid ratio of the silicon material in real time, so that when the material block is about to be melted, the heating power is reduced in time, avoiding the phenomenon that the melting temperature continues to rise and needs to be cooled down to the appropriate liquid temperature again, wasting a lot of work hours, thereby improving the melting efficiency.

[0105] The method for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace provided in an embodiment of the present application adopts a sensor to detect a first volume of silicon blocks above the silicon liquid surface in the silicon material, determines a second volume of silicon blocks below the silicon liquid surface in the silicon material based on the first volume, and determines the solid-to-liquid ratio of the silicon material based on the first volume, the second volume and the total weight of the silicon material; the method improves the detection accuracy of the solid-to-liquid ratio of the silicon material in the single crystal furnace.

[0106] Figure 2 Schematic diagram of the process of detecting the solid-liquid ratio of silicon material in a single crystal furnace provided in this application Figure 2 ,like Figure 2 As shown, in this embodiment Figure 1Based on the embodiment, a method for detecting the solid-liquid ratio of silicon material in a single crystal furnace is described in detail. The method for detecting the solid-liquid ratio of silicon material in a single crystal furnace provided in this embodiment includes:

[0107] S201 , using a sensor to detect a first volume of silicon blocks above a silicon liquid surface in the silicon material.

[0108] Step S201 is similar to the above step S101 and will not be described again.

[0109] S202, determining the density difference between the silicon liquid density and the silicon block density.

[0110] For example, when the density of the silicon liquid is 2.5 g / cm 3 The density of silicon block is 2.33g / cm 3 In the case of 3 .

[0111] S203 , dividing the product of the first volume and the density of the silicon block by the density difference to obtain a second volume.

[0112] The volume of the silicon block below the silicon liquid surface, ie, the second volume, is calculated based on the volume of the silicon block above the liquid surface, the known density of the silicon block, and the difference between the density of the silicon liquid and the density of the silicon block.

[0113] For example, in the first volume of 3400 cm 3 The density of silicon block is 2.33g / cm 3 , the density difference is 0.17g / cm 3 In the case of , the above formula (2) can be used to calculate the second volume = (2.33 × 3200) / 0.17 = 46600 cm 3 .

[0114] S204 , multiplying the sum of the first volume and the second volume by the density of the silicon block to obtain the weight of the silicon block.

[0115] Here, the mass of the silicon block refers to the sum of the volume of the silicon block above the silicon liquid surface and the volume of the silicon block below the silicon liquid surface. For example, the first volume is 3400 cm 3 , the second volume is 46600cm 3 The density of silicon block is 2.33g / cm 3 In this case, the weight of the silicon block can be calculated using the above formula (3), that is, the weight of the silicon block = (3400 + 46600) × 2.33 = 116500 g.

[0116] S205 . Determine the weight of the silicon liquid based on the weight of the silicon block and the total weight of the silicon material.

[0117] The weight of the silicon liquid can be calculated using the above formula (4), for example:

[0118] When the total weight of the silicon material is 250 kg and the weight of the silicon block is 116.5 kg, the weight of the silicon liquid can be calculated to be 250-116.5=133.5 kg.

[0119] S206, determining the ratio of the weight of the silicon block to the weight of the silicon liquid as the solid-liquid ratio.

[0120] For example, when the weight of the silicon liquid is 250 kg and the weight of the silicon block is 116.5 kg, the solid-liquid ratio can be calculated using the above formula (5): 250-116.5=0.87.

[0121] Optionally, after determining the solid-liquid ratio of the silicon material of the single crystal furnace, the corresponding relationship between the solid-liquid ratio and the heating power of the single crystal furnace determined based on historical data can also be obtained;

[0122] Based on the corresponding relationship and the solid-liquid ratio, the heating power of the single crystal furnace is adjusted.

[0123] In an embodiment of the present application, the solid-liquid ratio data of the single crystal furnace under different heating powers can be obtained and analyzed and processed. When the historical data presents a linear relationship, a linear regression model can be used to establish a mathematical model between the solid-liquid ratio and the heating power. Then, based on the current solid-liquid ratio and the established corresponding relationship, the heating power required for the single crystal furnace can be calculated, thereby improving the crystal pulling efficiency.

[0124] The embodiment of the present application provides a method for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace. The method uses a sensor to detect a first volume of silicon blocks above the silicon liquid level in the silicon material, determines the density difference between the silicon liquid density and the silicon block density, multiplies the product of the first volume, the silicon block density, and the gravity constant by the density difference to obtain a second volume, multiplies the sum of the first volume and the second volume by the silicon block density to obtain the silicon block weight, determines the silicon liquid weight based on the silicon block weight and the total weight of the silicon material, and determines the ratio of the silicon block weight to the silicon liquid weight as the solid-to-liquid ratio. The method improves the detection accuracy of the solid-to-liquid ratio of the silicon material in the single crystal furnace.

[0125] Figure 3 The schematic diagram of the structure of the device for detecting the solid-liquid ratio of silicon material in the single crystal furnace provided in the present application is as follows: Figure 3 As shown, the silicon material solid-liquid ratio detection device 300 of the single crystal furnace provided in this embodiment includes:

[0126] A detection module 301 is used to detect a first volume of silicon blocks above the silicon liquid level in the silicon material using a sensor;

[0127] A processing module 302 is used to determine a second volume of silicon blocks in the silicon material below the silicon liquid surface according to the first volume, the silicon liquid density and the silicon block density;

[0128] The processing module 302 is further configured to determine a solid-liquid ratio of the silicon material based on the first volume, the second volume, and a total weight of the silicon material.

[0129] Optionally, the processing module 302 is further used to determine a projected area of ​​a silicon block above the silicon liquid surface, and divide the projected area into a plurality of unit areas;

[0130] The detection module 301 is further used to detect, for each unit area, an average height of the silicon blocks corresponding to the unit area using a laser sensor;

[0131] The processing module 302 is further configured to determine the volume of the silicon blocks corresponding to each unit area according to the average height of the silicon blocks and the unit area, and determine the sum of the volumes of the silicon blocks corresponding to the multiple unit areas as the first volume.

[0132] Optionally, the detection module 301 is further used to use multiple visual sensors to photograph the silicon block above the silicon liquid surface from different angles to obtain multiple images;

[0133] The processing module 302 is further configured to determine depth information of a silicon block above the silicon liquid surface based on the parallax of the multiple images;

[0134] The processing module 302 is further configured to generate a three-dimensional model of the silicon block above the silicon liquid surface based on the depth information, and determine the first volume based on the three-dimensional model.

[0135] Optionally, the device further includes: a projection module 303;

[0136] The projection module 303 is used to project a preset image onto the silicon block above the silicon liquid surface using a structured light sensor;

[0137] The detection module 301 is further used to collect a deformed image of the preset image using a visual sensor;

[0138] The processing module 302 is further configured to generate a three-dimensional model of the silicon block above the silicon liquid surface based on the deformed image, and determine the first volume based on the three-dimensional model.

[0139] Optionally, the processing module 302 is further used to determine a density difference between the silicon liquid density and the silicon block density;

[0140] The processing module 302 is further configured to obtain the second volume by dividing the product of the first volume and the density of the silicon block by the density difference.

[0141] Optionally, the processing module 302 is further configured to multiply the sum of the first volume and the second volume by the density of the silicon block to obtain the weight of the silicon block;

[0142] The processing module 302 is further used to determine the weight of the silicon liquid based on the weight of the silicon block and the total weight of the silicon material;

[0143] The processing module 302 is further configured to determine the ratio of the weight of the silicon block to the weight of the silicon liquid as the solid-liquid ratio.

[0144] Optionally, the device further includes: an acquisition module 304 and a control module 305;

[0145] The acquisition module 304 is used to acquire the corresponding relationship between the solid-liquid ratio and the heating power of the single crystal furnace determined based on historical data;

[0146] The control module 305 is used to adjust the heating power of the single crystal furnace based on the corresponding relationship and the solid-liquid ratio.

[0147] It should be noted that the specific implementation principle and effect of the above-mentioned silicon material solid-liquid ratio detection device for the single crystal furnace can be found in the relevant description and effects corresponding to the above-mentioned embodiments, and will not be elaborated here.

[0148] The present application also provides a schematic diagram of the structure of an electronic device. Figure 4 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application is shown in FIG. Figure 4 As shown, the electronic device may include: a processor 401 and a memory 402 communicatively connected to the processor; the memory 402 stores a computer program; the processor 401 executes the computer program stored in the memory 402, so that the processor 401 executes the method described in any of the above embodiments.

[0149] The memory 402 and the processor 401 may be connected via a bus 403 .

[0150] An embodiment of the present application further provides a computer-readable storage medium, which stores computer-executable instructions. When the computer-executable instructions are executed by a processor, they are used to implement the method described in any of the aforementioned embodiments of the present application.

[0151] An embodiment of the present application further provides a chip for executing instructions, wherein the chip is used to execute the method described in any of the aforementioned embodiments as executed by an electronic device in any of the aforementioned embodiments of the present application.

[0152] An embodiment of the present application further provides a computer program product, which includes a computer program. When the computer program is executed by a processor, the method described in any of the aforementioned embodiments of the present application executed by an electronic device can be implemented.

[0153] In the several embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of modules is only a logical function division. There may be other division methods in actual implementation, such as multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or modules, which can be electrical, mechanical or other forms.

[0154] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the modules may be selected according to actual needs to implement the solution of this embodiment.

[0155] In addition, each functional module in each embodiment of the present application can be integrated into one processing unit, or each module can exist physically separately, or two or more modules can be integrated into one unit. The above-mentioned module-composed unit can be implemented in the form of hardware or in the form of hardware plus software functional units.

[0156] The above-mentioned integrated module implemented in the form of a software function module can be stored in a computer-readable storage medium. The above-mentioned software function module is stored in a storage medium, including a number of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) or a processor to perform some steps of the method described in each embodiment of the present application.

[0157] It should be understood that the processor may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), etc. A general-purpose processor may be a microprocessor or any conventional processor. The steps of the method disclosed in the application may be directly implemented as being executed by a hardware processor, or may be implemented by a combination of hardware and software modules in the processor.

[0158] The memory may include high-speed random access memory (RAM), and may also include non-volatile memory (NVM), such as at least one disk storage, and may also be a USB flash drive, a mobile hard disk, a read-only memory, a disk or an optical disk, etc.

[0159] The bus may be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, the bus in the drawings of the present application is not limited to only one bus or one type of bus.

[0160] The above storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk. The storage medium can be any available medium that can be accessed by a general or special computer.

[0161] An exemplary storage medium is coupled to a processor so that the processor can read information from the storage medium and write information to the storage medium. Of course, the storage medium can also be a component of the processor. The processor and the storage medium can be located in an application specific integrated circuit (ASIC). Of course, the processor and the storage medium can also exist as discrete components in an electronic device or a main control device.

[0162] It should be noted that, for the aforementioned method embodiments, for the sake of simplicity, they are all expressed as a series of action combinations, but those skilled in the art should be aware that the present application is not limited by the described order of actions, because according to the present application, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily required by the present application.

[0163] It should be further noted that, although the various steps in the flowchart are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless there is a clear description in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowchart may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these sub-steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

[0164] In the above embodiments, the description of each embodiment has its own emphasis. For the part not described in detail in a certain embodiment, please refer to the relevant description of other embodiments. The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0165] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the invention disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary techniques in the art that are not disclosed in the present application. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the claims.

[0166] The above is only a specific implementation of the embodiment of the present application, but the protection scope of the embodiment of the present application is not limited thereto, and any changes or replacements within the technical scope disclosed in the embodiment of the present application should be included in the protection scope of the embodiment of the present application. Therefore, the protection scope of the embodiment of the present application should be based on the protection scope of the claims.

Claims

1. A method for detecting the solid-liquid ratio of silicon material in a single crystal furnace, characterized in that: The method comprises: Using a sensor to detect a first volume of silicon blocks in the silicon material that are above a silicon liquid surface; Determining a second volume of silicon blocks in the silicon material below the silicon liquid surface according to the first volume, the silicon liquid density, and the silicon block density; A solid-to-liquid ratio of the silicon material is determined based on the first volume, the second volume, and a total weight of the silicon material.

2. The method according to claim 1, characterized in that The method of using a sensor to detect a first volume of a silicon block above a silicon liquid level in the silicon material comprises: Determining a projected area of ​​a silicon block above a silicon liquid surface, and dividing the projected area into a plurality of unit areas; For each of the unit areas, a laser sensor is used to detect an average height of the silicon blocks corresponding to the unit area; The volume of the silicon block corresponding to each unit area is determined according to the average height of the silicon block and the unit area, and the sum of the volumes of the silicon blocks corresponding to the multiple unit areas is determined as the first volume.

3. The method according to claim 1, characterized in that The method of using a sensor to detect a first volume of a silicon block above a silicon liquid level in the silicon material comprises: Multiple visual sensors are used to photograph the silicon block above the silicon liquid surface from different angles to obtain multiple images; Determining depth information of a silicon block above a silicon liquid surface based on parallax of the plurality of images; A three-dimensional model of the silicon block above the silicon liquid surface is generated based on the depth information, and the first volume is determined based on the three-dimensional model.

4. The method according to claim 1, characterized in that: The method of using a sensor to detect a first volume of a silicon block above a silicon liquid level in the silicon material comprises: A structured light sensor is used to project a preset image onto a silicon block above the silicon liquid surface; A visual sensor is used to collect a deformed image of the preset image, a three-dimensional model of the silicon block above the silicon liquid surface is generated based on the deformed image, and the first volume is determined based on the three-dimensional model.

5. The method according to any one of claims 1 to 4, characterized in that The determining the second volume of the silicon block below the silicon liquid level in the silicon material according to the first volume, the silicon liquid density and the silicon block density comprises: Determining a density difference between the silicon liquid density and the silicon block density; The second volume is obtained by multiplying the first volume and the density of the silicon block by the density difference.

6. The method according to any one of claims 1 to 4, characterized in that The step of determining the solid-liquid ratio of the silicon material based on the first volume, the second volume, and the total weight of the silicon material comprises: Multiplying the sum of the first volume and the second volume by the density of the silicon block to obtain the weight of the silicon block; Determining the weight of the silicon liquid based on the weight of the silicon block and the total weight of the silicon material; The ratio of the weight of the silicon block to the weight of the silicon liquid is determined as the solid-liquid ratio.

7. The method according to any one of claims 1 to 4, characterized in that The method further comprises: Obtain the corresponding relationship between the solid-liquid ratio and the heating power of the single crystal furnace determined based on historical data; Based on the corresponding relationship and the solid-liquid ratio, the heating power of the single crystal furnace is adjusted.

8. A device for detecting the solid-liquid ratio of silicon material in a single crystal furnace, characterized in that: The device comprises: A detection module, configured to detect a first volume of silicon blocks above a silicon liquid level in the silicon material using a sensor; A processing module, configured to determine a second volume of silicon blocks in the silicon material that are below the silicon liquid surface according to the first volume, the silicon liquid density, and the silicon block density; The processing module is further used to determine the solid-liquid ratio of the silicon material based on the first volume, the second volume and the total weight of the silicon material.

9. An electronic device, characterized in that: include: Memory, processor; The memory stores computer-executable instructions; The processor executes the computer-executable instructions stored in the memory, so that the processor executes the method for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer-executable instructions, which, when executed by a processor, are used to implement the method for detecting the solid-to-liquid ratio of silicon material in a single crystal furnace according to any one of claims 1 to 7.

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