Amorphous rate detection method and ion implantation temperature monitoring method

Abstract

The invention provides an amorphization rate detection method and an ion implantation temperature monitoring method. In the detection method of the amorphization rate, the corresponding optical signal is obtained by performing optical detection on the substrate, and the corresponding amorphization rate can be obtained according to the matched relation group in the database, so that the nondestructive, efficient and low-cost detection effect is realized. Moreover, according to the ion implantation temperature monitoring method provided by the invention, the phenomenon that non-crystallization of different degrees can be generated at different ion implantation temperatures is utilized, so that the injection temperature monitoring process of the ion implantation equipment can be realized by acquiring the non-crystallization rate of the substrate; the problem that the actually generated amorphization degree deviates from the expectation due to the deviation of the ion implantation temperature is effectively solved, the performance of the prepared device is improved, and the product yield is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method for detecting an amorphization rate and a method for monitoring an ion implantation temperature. Background Art

[0002] In the pre-amorphization ion implantation (PAI) process of advanced node devices, cold ion implantation is usually used to achieve a more precise pre-amorphization degree, while also ensuring the flatness of the amorphous-crystal (ac) interface and preventing device degradation caused by the end defect effect (EOR). For example, pre-amorphization ion implantation can be performed at a temperature of -100°C to 25°C to achieve a clear boundary between the amorphous region and the crystalline region. It can be seen that when performing amorphization ion implantation, the degree of amorphization is easily affected by the temperature of ion implantation (cold ion implantation), so the temperature of ion implantation is a key parameter of ion implantation equipment and processes.

[0003] At present, the ion implantation temperature of the ion implantation machine can only be based on the temperature of the tray used to fix the substrate. However, there may be a deviation between the temperature of the tray and the actual temperature of the substrate surface during ion implantation. For example, if the temperature conduction loss from the tray to the substrate is too large or the temperature sensor of the tray fails, the actual temperature during ion implantation will be deviated, resulting in the degree of amorphization being difficult to achieve the expected level, and ultimately causing the performance and yield of the device to deteriorate. Therefore, it is urgent to provide a detection method that can accurately obtain the actual temperature during ion implantation.

[0004] In this regard, the inventors of the present invention have found through research and experiments that different degrees of amorphization will occur at different ion implantation temperatures, and therefore proposed that the actual temperature during ion implantation can be inferred from the amorphization rate. However, the conventional method for detecting the amorphization rate is usually to use a transmission electron microscope, which requires slicing the substrate and has to be scrapped, which is time-consuming and costly. Summary of the invention

[0005] One of the objectives of the present invention is to provide a method for detecting an amorphization rate, so as to realize the detection of the amorphization rate with high efficiency and low cost.

[0006] The present invention provides a method for detecting an amorphization rate, comprising: establishing a database, wherein the database collects relationship groups of amorphization rates and corresponding optical signals; providing a substrate to be detected having an amorphized layer, and performing optical detection on the substrate to be detected to obtain an optical signal; and selecting a relationship group that matches the optical signal from the substrate to be detected from the database, and obtaining the corresponding amorphization rate based on the selected relationship group.

[0007] Optionally, the optical signal includes: a refractive index of light and a parameter set formed by a combination of at least one optical parameter of an absorption coefficient and an extinction coefficient.

[0008] Optionally, the amorphization rates in the same relationship group are the same and correspond to multiple parameter sets, and each parameter set corresponds to an amorphization rate.

[0009] Optionally, the relationship groups in the database are arranged in a matrix form, multiple parameter sets in the same relationship group are arranged on the same straight line, and the corresponding relationship groups are arranged in sequence according to the direction of amorphization rate from small to large.

[0010] Optionally, the method for establishing the database includes: providing multiple sample substrates with different amorphization rates, and performing optical detection on each sample substrate to obtain a corresponding light signal; collecting the amorphization rate and the corresponding light signal of each sample substrate to form a relationship group of the amorphization rate and the corresponding light signal.

[0011] Optionally, the amorphization rate of each sample substrate is detected using a transmission electron microscope or an X-ray diffraction method.

[0012] Another object of the present invention is to provide a method for monitoring ion implantation temperature, comprising: providing a monitoring substrate, performing amorphization ion implantation on the monitoring substrate at a set temperature, and obtaining the amorphization rate on the monitoring substrate. And, the monitoring method further comprises: obtaining the actual temperature of ion implantation according to the relationship between the amorphization rate and the ion implantation temperature, and judging whether there is a temperature deviation in the ion implantation equipment according to the difference between the actual temperature of ion implantation and the set temperature of ion implantation. Alternatively, the monitoring method further comprises: judging whether there is a temperature deviation in the ion implantation equipment according to the difference between the amorphization rate on the monitoring substrate and the theoretical amorphization rate, and the method for obtaining the theoretical amorphization rate comprises: obtaining the corresponding amorphization rate at the set temperature according to the relationship between the amorphization rate and the ion implantation temperature.

[0013] Optionally, the amorphization rate detection method as described above is used to obtain the amorphization rate on the monitoring substrate.

[0014] Optionally, a method for obtaining a relationship between amorphization rate and ion implantation temperature includes: providing a plurality of sample substrates, and performing amorphization ion implantation on each sample substrate at different ion implantation temperatures; and obtaining the amorphization rate of each sample substrate to collect the amorphization rate and the corresponding ion implantation temperature, and fitting to form a relationship between the amorphization rate and the ion implantation temperature.

[0015] Optionally, the amorphization rate of the sample substrate is obtained by using the amorphization rate detection method as described above; or, the amorphization rate of the sample substrate is obtained by using a transmission electron microscope or an X-ray diffraction method.

[0016] In the method for detecting the amorphization rate provided by the present invention, based on the inventor's creative discovery that different amorphization rates will generate optical signals with different parameter values, a database containing a corresponding relationship group between amorphization rates and optical signals is established. Therefore, when detecting the amorphization rate, the corresponding optical signal can be obtained by optically detecting the substrate, and then the corresponding amorphization rate can be obtained according to the matching relationship group in the database, thereby achieving a lossless, efficient and low-cost detection effect.

[0017] Furthermore, in the ion implantation temperature monitoring method provided by the present invention, the phenomenon that different degrees of amorphization will occur at different ion implantation temperatures is utilized, and it is proposed to use the amorphization rate to infer the actual temperature of ion implantation, thereby directly judging whether the ion implantation equipment has temperature drift; or, based on the amorphization degree that should be theoretically achieved at the set temperature, it is possible to indirectly judge whether the ion implantation equipment has temperature drift. In this way, a fast and convenient monitoring process of the implantation temperature of the ion implantation equipment can be realized, effectively improving the problem that when there is a deviation in the ion implantation temperature, the actual degree of amorphization produced is greatly different from the expected degree of amorphization produced, which is conducive to improving the performance of the prepared device and improving the product yield.

[0018] Furthermore, the amorphization rate detection method provided by the present invention can also be applied to the ion implantation temperature monitoring method, so that the ion implantation temperature monitoring effect can be achieved more efficiently. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 FIG. 4 is a flow chart of a method for detecting an amorphization rate in one embodiment of the present invention.

[0020] Figure 2 Schematic diagram of a database established in a method for detecting an amorphization rate in an embodiment of the present invention.

[0021] Figure 3 Schematic diagram of a flow chart of a method for monitoring ion implantation temperature in an embodiment of the present invention.

[0022] Figure 4 It is a linear relationship between the amorphization rate and the ion implantation temperature formed by fitting in the ion implantation temperature monitoring method in one embodiment of the present invention.

[0023] Figure 5 The figure is a flow chart of a specific detection process of ion implantation temperature in one embodiment of the present invention. DETAILED DESCRIPTION

[0024] One of the core ideas of the present invention is to provide a method for detecting the amorphization rate, which can detect the amorphization rate efficiently and at low cost. Figure 1 As shown, a method for detecting an amorphization rate in an embodiment of the present invention may include the following steps.

[0025] Step S110 , establishing a database, wherein the database collects relationship groups between amorphization rates and corresponding optical signals.

[0026] Step S120 , providing a substrate to be inspected having an amorphized layer, and performing optical inspection on the substrate to be inspected to obtain an optical signal.

[0027] Step S130, selecting a relationship group that matches the optical signal from the substrate to be detected from the database, and obtaining a corresponding amorphization rate according to the selected relationship group.

[0028] In addition, as described in the background technology, the inventors of the present invention have found through research that different ion implantation temperatures will produce different degrees of amorphization, and therefore proposed that the actual temperature during ion implantation can be inferred by the amorphization rate. That is, another core idea of ​​the present invention is to provide a method for monitoring ion implantation temperature, which can quickly and conveniently detect the actual temperature during ion implantation. For details, please refer to Figure 3 As shown, a method for monitoring ion implantation temperature in an embodiment of the present invention may include the following steps.

[0029] Step S210, providing a monitoring substrate.

[0030] Step S220 , performing amorphization ion implantation on the monitoring substrate at a set temperature, and obtaining an amorphization rate on the monitoring substrate.

[0031] After obtaining the amorphization rate on the substrate, the actual amorphization rate on the monitoring substrate can be directly compared with the theoretical amorphization rate to determine whether the equipment has a temperature deviation. For example, referring to steps S2311-S2312, the actual temperature of ion implantation is obtained according to the relationship between the amorphization rate and the ion implantation temperature, and the difference between the actual temperature of ion implantation and the set temperature of ion implantation is used to determine whether the ion implantation equipment has a temperature deviation.

[0032] Alternatively, after obtaining the actual amorphization rate of the substrate, the actual temperature can be further obtained based on the actual amorphization rate, and then the actual temperature is compared with the set temperature to determine whether the equipment has a temperature deviation. For example, referring to steps S2321-S2322, the theoretical amorphization rate corresponding to the set temperature is obtained according to the relationship between the amorphization rate and the ion implantation temperature, and the difference between the actual amorphization rate and the theoretical amorphization rate on the monitoring substrate is used to determine whether the ion implantation equipment has a temperature deviation.

[0033] Furthermore, when obtaining the amorphization rate of the monitoring substrate in step S220, the amorphization rate detection method described above can be specifically used, that is, by performing optical detection on the substrate and then inferring the corresponding amorphization rate based on the light signal obtained by the optical detection.

[0034] The following is a further detailed description of the amorphization rate detection method and the ion implantation temperature monitoring method proposed in the present invention in combination with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer according to the following description. It should be noted that the accompanying drawings are all in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0035] In step S110, a database is established, in which a relationship group of amorphization rate and corresponding optical signal is collected. Specifically, each relationship group contains an optical signal and a corresponding amorphization rate, so when detecting the amorphization rate, after acquiring the optical signal of the substrate, the corresponding amorphization rate can be obtained according to the matching relationship group. It can be considered that the optical signal can be used to characterize the amorphization rate of the substrate.

[0036] In a specific example, the optical signal used to characterize the amorphization rate may include: a refractive index n of light and a parameter set formed by a combination of at least one of the optical parameters of the absorption coefficient α and the extinction coefficient k. For example, the optical signal is a parameter set (n, α) including the refractive index n and the absorption coefficient α; or, the optical signal is a parameter set (n, k) including the refractive index n and the extinction coefficient k; or, the optical signal is a parameter set (n, α, k) including the refractive index n, the absorption coefficient α and the extinction coefficient k.

[0037] Among them, different optical signals have different parameter values ​​in the parameter set. Taking the optical signal as a parameter set (n, α, k) including a refractive index n, an absorption coefficient α and an extinction coefficient k as an example, when the parameter value of any one of the parameters is different, it corresponds to different optical signals, for example, the parameter set (n1, α1, k1) is different from the parameter set (n2, α1, k1), the parameter set (n1, α1, k1) is different from the parameter set (n1, α2, k1), and the parameter set (n1, α1, k1) is different from the parameter set (n2, α2, k2), and the parameter set (n1, α1, k1) is different from the parameter set (n2, α2, k2), and they correspond to four optical signals respectively.

[0038] Furthermore, the optical signal of each parameter set corresponds to an amorphization rate, and the same amorphization rate may correspond to multiple parameter sets, that is, the amorphization rates in the same relationship group are the same and correspond to multiple parameter sets. For example, for a relationship group with an amorphization rate of 50%, it may correspond to parameter set (n1, α1, k1), parameter set (n2, α2, k2), parameter set (n3, α3, k3), etc. Moreover, each parameter set corresponds to an amorphization rate, for example, the optical signal of parameter set (n1, α1, k1) only corresponds to an amorphization rate of 50%, and the optical signal of parameter set (n3, α3, k3) corresponds to an amorphization rate of 60%. Therefore, the corresponding amorphization rate can be uniquely determined based on the specific parameter value of the parameter set of the optical signal.

[0039] In one example, please refer to Figure 2 As shown in the database matrix diagram, the relationship groups in the database can be arranged in a matrix form, for example, multiple parameter sets in the same relationship group can be arranged on the same straight line, that is, multiple parameter sets corresponding to the same amorphization rate can be arranged on the same straight line. Figure 2 As shown, each parameter set of an optical signal corresponds to a square, wherein multiple squares representing a 10% amorphization rate are arranged on the same straight line; multiple squares representing a 50% amorphization rate are arranged on the same straight line; multiple squares representing a 90% amorphization rate are arranged on the same straight line. It can be considered that multiple squares (optical signals) arranged on the same straight line are grouped in the same relationship group and correspond to a unique amorphization rate.

[0040] Continue to refer Figure 2 As shown, the multiple relationship groups in the database can also be arranged in order from small to large amorphization rates. Figure 2 As shown in the matrix diagram in , the amorphization rate increases from the lower left corner to the upper right corner. Of course, in other examples, the relationship groups of amorphization rates from small to large can be arranged from left to right.

[0041] In addition, the method for establishing the database as described above may include: providing a plurality of sample substrates with different amorphization rates, and performing optical detection on each sample substrate to obtain a corresponding optical signal; thereafter, collecting the amorphization rate and the corresponding optical signal of each sample substrate to form a relationship group of the amorphization rate and the corresponding optical signal. The amorphization rate of the sample substrate may be obtained, for example, using a transmission electron microscope (TEM), and the amorphization rate may be calculated according to the following method: amorphization rate (%) = ((complete area - crystal area)) ÷ complete area) × 100; or, XRD (X-ray diffraction) may be used to detect the amorphization rate of the substrate. And, when obtaining the optical signal from the sample substrate, the collected parameters include: the refractive index n of the light and a parameter set formed by a combination of at least one of the optical parameters of the absorption coefficient α and the extinction coefficient k.

[0042] It should be noted that when the optical detection device is used to perform optical detection on the substrate, the optical detection device can automatically detect the refractive index n, absorption coefficient α, extinction coefficient k and other parameter values ​​of the light from the substrate. For example, the refractive index n, absorption coefficient α, extinction coefficient k and other parameter values ​​of the light from the substrate can be automatically detected using an ellipsometer.

[0043] In step S120, a substrate to be inspected having an amorphized layer is provided, and optical inspection is performed on the substrate to be inspected to obtain an optical signal, which may be an optical signal of a parameter set (n, α, k).

[0044] In a specific example, an optical detection device can be used to perform optical detection on the substrate to be detected, and the optical detection device can automatically detect parameter values ​​such as the refractive index n, absorption coefficient α and extinction coefficient k of the light from the substrate to be detected, and then obtain a corresponding parameter set of the optical signal.

[0045] In step S130, a relationship group matching the optical signal from the substrate to be detected is selected from the database, and the corresponding amorphization rate is obtained according to the selected relationship group. Figure 2 As shown, the optical signal that best matches the parameter set (n, α, k) of the detected optical signal is selected from the database, so that the amorphization rate of the substrate to be detected can be obtained according to the corresponding relationship group.

[0046] It can be seen that the amorphization rate detection method provided by the present invention obtains a light signal characterizing the amorphization rate through optical detection, so that the amorphization rate can be inferred based on the light signal, thereby achieving non-destructive and efficient detection effect, effectively improving detection efficiency and reducing detection costs.

[0047] The present disclosure also provides a method for monitoring ion implantation temperature, which can be specifically referred to Figure 3As shown, one of the monitoring methods includes steps S210, S220, S2311 to S2312, that is, the actual temperature during ion implantation is inferred by the amorphization rate, so as to directly determine whether the ion implantation temperature has a deviation. Alternatively, another optional monitoring method includes steps S210, S220, S2321 to S2322, that is, based on the deviation between the actual amorphization rate generated at the actual temperature and the theoretical amorphization rate at the set temperature, it is indirectly determined whether the ion implantation equipment has a temperature deviation.

[0048] Specifically, in step S210, a monitoring substrate is provided, and the monitoring substrate is, for example, a blank substrate that has not been implanted. And, in step S220, an amorphization ion implantation is performed on the monitoring substrate at a set temperature T0, and the amorphization rate on the monitoring substrate is obtained. In a specific example, the monitoring substrate is, for example, a silicon substrate, and cold ion implantation is performed on the substrate, and the implanted ions include but are not limited to arsenic, germanium, argon, etc., to form a certain degree of amorphization layer on the surface of the substrate.

[0049] In addition, the amorphization rate caused by amorphization ion implantation can be obtained by optical detection as described above, that is, optical detection is performed on the substrate after ion implantation to obtain an optical signal characterizing the amorphization rate, so that the amorphization rate can be inferred based on the matching optical signal in the database.

[0050] For steps S2311 to S2312, they specifically include: obtaining the actual temperature T1 of ion injection based on the relationship between the amorphization rate and the ion injection temperature, and directly judging whether there is a temperature deviation in the ion injection equipment based on the difference between the actual temperature T1 of ion injection and the set temperature T0 of ion injection.

[0051] In a specific example, a linear relationship may be presented between the amorphization rate and the ion implantation temperature. The relationship between the amorphization rate and the ion implantation temperature may be obtained, for example, by the following method, including: providing a plurality of sample substrates, and performing amorphization ion implantation on each sample substrate at different ion implantation temperatures; then, obtaining the amorphization rate of each sample substrate, so as to collect the amorphization rate and the corresponding ion implantation temperature, and fitting to form a relationship between the amorphization rate and the ion implantation temperature.

[0052] For example, see Table 1 and Figure 4 As shown, under fixed ion type (such as germanium), implantation dose and implantation energy, ion implantation is performed on different sample substrates at different ion implantation temperatures, and an amorphization rate such as shown in Table 1 is obtained; then, fitting can be performed based on multiple sets of amorphization rate-ion implantation temperature detection data to obtain a linear relationship between the amorphization rate and the ion implantation temperature, such as Figure 4shown.

[0053] Table 1

[0054]

[0055]

[0056] It should be appreciated that the amorphization rate of the sample substrate can also be obtained by optical detection as described above; or, the amorphization rate of the sample substrate can also be obtained by transmission electron microscopy.

[0057] After ion implantation is performed on the monitoring substrate at a set temperature T0 to obtain a corresponding amorphization rate, the amorphization rate can be calculated according to, for example, Figure 4 The actual temperature T1 acting on the substrate can be obtained according to the linear relationship shown, and the ion implantation equipment can be temperature corrected according to the deviation of the actual temperature T1 of ion implantation relative to the set temperature T0 of ion implantation.

[0058] As for steps S2321 to S2322, they specifically include: according to the relationship between the amorphization rate and the ion implantation temperature, the theoretical amorphization rate V0 corresponding to the set temperature T0 is obtained, and according to the difference between the actual amorphization rate V1 on the monitoring substrate and the theoretical amorphization rate V0, it is indirectly determined whether there is a temperature deviation in the ion implantation equipment.

[0059] Among them, when the difference between the actual amorphization rate V1 and the theoretical amorphization rate V0 exceeds the predetermined range, it means that the ion implantation equipment has temperature drift and needs to be temperature corrected; conversely, when the difference between the actual amorphization rate V1 and the theoretical amorphization rate V0 does not exceed the predetermined range, it means that the ion implantation equipment has no temperature drift and does not need to be temperature corrected.

[0060] In summary, the present disclosure provides a method for detecting an amorphization rate with high efficiency and low cost and a convenient method for monitoring ion implantation temperature. In the process of detecting the ion implantation temperature, the actual temperature of the ion implantation is inferred based on the amorphization rate of the substrate, and the amorphization rate of the substrate can be detected by the amorphization rate detection method as described above.

[0061] It should be noted that in the prior art, for example, the thickness of the amorphous layer is used to infer the actual temperature of ion implantation. However, for the amorphization ion implantation process, the interface between the formed amorphous layer and the underlying single crystal layer is often unclear. At this time, it is difficult to accurately obtain the thickness of the amorphous layer, and thus it is impossible to accurately infer the ion implantation temperature. In addition, the thickness of the amorphous layer is mainly determined by the ion implantation energy, so a slight change in the ion implantation temperature will not significantly cause a change in the thickness of the amorphous layer. Therefore, it is difficult to sensitively reflect the actual temperature of ion implantation using the thickness of the amorphous layer.

[0062] Combine the following Figure 5 , a specific example of applying the above-mentioned amorphization rate detection method to the ion implantation temperature detection process is described.

[0063] First, a substrate is provided, and amorphization ion implantation is performed on the substrate at a set temperature T0. In a specific example, cold ion implantation can be performed at a temperature range of -100°C to 25°C.

[0064] Next, optical detection is performed on the substrate after ion implantation to obtain an optical signal, such as an optical signal containing a parameter set (n, α, k).

[0065] Next, a relationship group matching the optical signal from the substrate is selected from the database, and the actual amorphization rate V1 on the corresponding substrate is obtained according to the selected relationship group. The database is, for example, Figure 2 In this way, the amorphization rate can be quickly inferred without damaging the substrate, thus reducing resource waste.

[0066] In this process, according to the relationship between the amorphization rate and the ion implantation temperature (for example Figure 4 The linear relationship shown in FIG. 1 is used to obtain the theoretical amorphization rate V0 corresponding to the set temperature T0.

[0067] Next, the actual amorphization rate V1 on the substrate is compared with the theoretical amorphization rate V0 to determine whether the absolute value of the deviation of the actual amorphization rate V1 relative to the theoretical amorphization rate V0 exceeds the predetermined range △V; if so, it means that the injection temperature of the ion implantation equipment is normal, there is no temperature drift, and the process requirements are met; if not, it means that the injection temperature of the ion implantation equipment drifts and does not meet the process requirements, and further temperature correction can be performed.

[0068] It should be noted that, although the present invention has been disclosed as a preferred embodiment, the above embodiment is not intended to limit the present invention. For any technician familiar with the art, without departing from the scope of the technical solution of the present invention, the technical content disclosed above can be used to make many possible changes and modifications to the technical solution of the present invention, or modified into equivalent embodiments of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiment according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still belongs to the scope of protection of the technical solution of the present invention.

[0069] It must be noted that as used herein and in the appended claims, the singular forms "a," "an," and "an" include plural references unless the context clearly indicates otherwise. For example, reference to "a step" or "a device" means reference to one or more steps or devices and may include secondary steps as well as secondary devices. All conjunctions used should be interpreted in the broadest sense. Also, the word "or" should be interpreted as having the definition of a logical "or" rather than a logical "exclusive or" unless the context clearly indicates otherwise.

Claims

1. A method for detecting amorphization rate, characterized in that: include: Establishing a database, wherein the database contains relationship groups between amorphization rates and corresponding optical signals; providing a substrate to be inspected having an amorphized layer, and performing optical inspection on the substrate to be inspected to obtain an optical signal; and, A relationship group matching the optical signal from the substrate to be detected is selected from the database, and the corresponding amorphization rate is obtained according to the selected relationship group.

2. The method for detecting the amorphization rate according to claim 1, characterized in that: The optical signal includes: a refractive index of light and a parameter set formed by combining at least one optical parameter of an absorption coefficient and an extinction coefficient.

3. The method for detecting the amorphization rate according to claim 2, characterized in that: The amorphization rates in the same relationship group are the same and correspond to multiple parameter sets, and each parameter set corresponds to an amorphization rate.

4. The method for detecting the amorphization rate according to claim 3, characterized in that: The relationship groups in the database are arranged in a matrix form, multiple parameter sets in the same relationship group are arranged on the same straight line, and the corresponding relationship groups are arranged in sequence according to the direction from small to large amorphization rates.

5. The method for detecting the amorphization rate according to claim 1, wherein: The method for establishing the database comprises: Providing a plurality of sample substrates with different amorphization rates, and performing optical detection on each sample substrate to obtain a corresponding optical signal; The amorphization rate and the corresponding optical signal of each sample substrate are collected to form a relationship group of the amorphization rate and the corresponding optical signal.

6. The method for detecting the amorphization rate according to claim 5, characterized in that: The amorphization rate of each sample substrate was detected by transmission electron microscopy or X-ray diffraction.

7. A method for monitoring ion implantation temperature, characterized in that: include: Providing a monitoring substrate, performing amorphization ion implantation on the monitoring substrate at a set temperature, and obtaining an amorphization rate on the monitoring substrate; as well as, The monitoring method further comprises: obtaining the actual temperature of ion implantation according to the relationship between the amorphization rate and the ion implantation temperature, and judging whether there is a temperature deviation in the ion implantation equipment according to the difference between the actual temperature of ion implantation and the set temperature of ion implantation; Alternatively, the monitoring method also includes: judging whether there is a temperature deviation in the ion implantation equipment based on the difference between the amorphization rate on the monitoring substrate and the theoretical amorphization rate, and the method for obtaining the theoretical amorphization rate includes: obtaining the corresponding amorphization rate at the set temperature based on the relationship between the amorphization rate and the ion implantation temperature.

8. The method for monitoring ion implantation temperature according to claim 7, characterized in that: The amorphization rate of the monitoring substrate is obtained by using the amorphization rate detection method as described in any one of claims 1 to 6.

9. The method for monitoring ion implantation temperature according to claim 7, characterized in that: Methods for obtaining the relationship between the amorphization rate and the ion implantation temperature include: Providing a plurality of sample substrates, and performing amorphization ion implantation on each sample substrate at a different ion implantation temperature; The amorphization rate of each sample substrate is obtained to collect the amorphization rate and the corresponding ion implantation temperature, and a relationship between the amorphization rate and the ion implantation temperature is formed by fitting.

10. The method for monitoring ion implantation temperature according to claim 9, characterized in that: The amorphization rate of the sample substrate is obtained by using the amorphization rate detection method as described in any one of claims 1 to 6; or, the amorphization rate of the sample substrate is obtained by using a transmission electron microscope or an X-ray diffraction method.

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