A radio frequency front end module

Abstract

The application relates to the technical field of integrated circuits, in particular to a radio frequency front-end module, which comprises a substrate comprising a plurality of metal layers arranged in sequence along a first direction; an inductor comprising at least one inductor winding, the inductor winding being arranged on the metal layer; and a first region arranged on the metal layer, the first region being a region paved with ground; wherein the inductor winding has a spacing between a first projection of the inductor winding on a first plane and a second projection of the first region on the first plane, and the minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction. The application reduces the overall loss and improves the output efficiency of the radio frequency front-end module.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of integrated circuits, and in particular to a radio frequency front-end module. BACKGROUND

[0002] Radio frequency front-end modules are widely used in wireless communication fields such as mobile phones, the Internet of Things, and automotive telematics. With the popularization of 5G technology and the development of the Internet of Things, the market demand for radio frequency front-end modules is growing. The loss of a radio frequency front-end module can have multiple effects on a system, including a decrease in signal quality, a decrease in system performance, an increase in energy consumption, an impact on coverage, an increase in system complexity, and system instability. Therefore, it is necessary to provide a radio frequency front-end module that can reduce loss and improve system performance. SUMMARY

[0003] In view of the above problems, the embodiments of the present application provide a radio frequency front-end module to solve the above technical problems.

[0004] The embodiments of the present application provide a radio frequency front-end module, comprising:

[0005] a substrate comprising a plurality of metal layers arranged in a first direction in sequence;

[0006] an inductor comprising at least one inductor winding, the inductor winding being arranged on the metal layer;

[0007] a first region arranged on the metal layer, the first region being a region in which a ground is laid;

[0008] wherein the inductor winding has a spacing between a first projection of the inductor winding on a first plane and a second projection of the first region on the first plane, and the minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction.

[0009] Optionally, the width of the inductor ranges from 50 μm to 150 μm.

[0010] Optionally, the minimum distance between the first projection and the second projection is greater than or equal to 0.7 times the width of the inductor.

[0011] Optionally, the metal layer comprises a first metal layer, the inductor winding and the first region are arranged on the first metal layer, and the distance between the inductor winding and the first region on the first metal layer is 1 to 2 times the width of the inductor.

[0012] Optionally, the metal layer includes a second metal layer and a third metal layer, which are disposed adjacent to each other. The second metal layer is provided with the inductor winding, and the third metal layer is provided with the first region. The distance between the projection of the inductor winding of the second metal layer onto the first plane and the projection of the first region of the third metal layer onto the first plane is 0.8 to 1.6 times the width of the inductor.

[0013] Optionally, the metal layer includes a fourth metal layer and a sixth metal layer, the fourth metal layer and the sixth metal layer are not adjacent, the fourth metal layer is provided with the inductor winding, the sixth metal layer is provided with the first region, and the distance between the projection of the inductor winding of the fourth metal layer on the first plane and the projection of the first region of the sixth metal layer on the first plane is 0.7 to 1.4 times the width of the inductor.

[0014] Optionally, the RF front-end module further includes an RF power amplifier chip and a second region disposed on the substrate, wherein the second region is a grounded region, and the components configured to be grounded in the RF power amplifier chip are grounded through the second region, and there is a gap between the third projection of the second region on the first plane and the second projection of the first region on the first plane.

[0015] Optionally, the minimum distance between the third projection of the second region onto the first plane and the second projection of the first region onto the first plane is greater than or equal to 1 / 2 of the wavelength corresponding to the operating frequency band of the RF power amplifier chip.

[0016] Optionally, the fourth projection of the RF power amplifier chip onto the first plane at least partially overlaps with the third projection of the second region onto the first plane.

[0017] Optionally, the RF front-end module further includes an output load circuit disposed on the substrate, the output load circuit being connected to the output terminal of the RF power amplifier chip, and the components configured to be grounded in the output load circuit being grounded through the second area.

[0018] Optionally, the output load circuit includes at least one grounded matching element configured to be grounded through the second region.

[0019] Optionally, the matching element includes a capacitor, an inductor, or a resistor.

[0020] Optionally, the output load circuit includes an output transformer, the grounding terminal of which is configured to be grounded through the second area.

[0021] Optionally, the output load circuit includes a first capacitor, a first inductor, a second capacitor, and a second inductor. The first end of the first capacitor is connected to the output end of the RF power amplifier chip. The second end of the first capacitor is connected to the signal output end through the first inductor. The first end of the second inductor is connected to the second end of the first capacitor. The second end of the second inductor is configured to be grounded through the second region. The first end of the second capacitor is connected to the second end of the first inductor. The second end of the second inductor is configured to be grounded through the second region.

[0022] The RF front-end module provided in this application includes a substrate, comprising at least one metal layer sequentially disposed along a first direction; an inductor, comprising at least one inductor winding disposed on the metal layer; and a first region disposed on the metal layer, the first region being a region with ground plane. The inductor winding has a gap between a first projection onto a first plane and a second projection onto the first plane, and the minimum distance between the first and second projections is greater than or equal to 0.5 times the width of the inductor. The first plane is perpendicular to the first direction. This method not only avoids reducing the circuit's quality factor (Q value) due to an excessively narrow inductor width, but also prevents RF energy coupling to the first region due to excessively close distance between the inductor and the first region, thereby reducing overall losses and improving the output efficiency of the RF front-end module.

[0023] This application provides a radio frequency front-end module, including:

[0024] The carrier includes multiple metal layers sequentially disposed along a first direction;

[0025] An inductor, including at least one inductor winding disposed on the metal layer;

[0026] A first region is disposed on the metal layer, and the first region is a region where ground is laid;

[0027] Wherein, the inductor winding has a gap between a first projection on a first plane and a second projection of the first region on the first plane, and the minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction.

[0028] Optionally, the minimum distance between the first projection and the second projection is greater than or equal to 0.7 times the width of the inductor.

[0029] Optionally, the carrier is a chip or a substrate.

[0030] The RF front-end module provided in this application includes a carrier comprising a plurality of metal layers sequentially disposed along a first direction; an inductor comprising at least one inductor winding disposed on the metal layers; and a first region disposed on the metal layers, the first region being a region with ground plane. The inductor winding has a gap between a first projection onto a first plane and a second projection onto the first plane, and the minimum distance between the first and second projections is greater than or equal to 0.5 times the width of the inductor. The first plane is perpendicular to the first direction. This method not only avoids reducing the quality factor (Q value) of the circuit due to an excessively narrow inductor width, but also prevents RF energy coupling to the first region due to excessively close distance between the inductor and the first region, thereby reducing overall losses and improving the output efficiency of the RF front-end module.

[0031] This application provides a radio frequency front-end module, including:

[0032] A substrate, and an RF power amplifier chip disposed on the substrate, a first region, and a second region; wherein the first region and the second region are both grounded regions, and the components configured to be grounded in the RF power amplifier chip are grounded through the second region, and the components configured to be grounded in other functional modules of the RF front-end module are grounded through the first region.

[0033] There is a gap between the projections of the first region and the second region onto the same plane.

[0034] Optionally, the minimum distance between the projections of the first region and the second region onto the same plane is greater than or equal to 1 / 2 of the wavelength corresponding to the operating frequency band of the RF power amplifier chip.

[0035] Optionally, the projection of the radio frequency power amplifier chip onto the second region on the same plane at least partially overlaps.

[0036] Optionally, the RF front-end module further includes an output load circuit disposed on the substrate, the output load circuit being connected to the output terminal of the RF power amplifier chip, and the components configured to be grounded in the output load circuit being grounded through the second area.

[0037] Optionally, the output load circuit includes a first capacitor, a first inductor, a second capacitor, and a second inductor. The first end of the first capacitor is connected to the output end of the RF power amplifier chip. The second end of the first capacitor is connected to the signal output end through the first inductor. The first end of the second inductor is connected to the second end of the first capacitor. The second end of the second inductor is configured to be grounded through the second region. The first end of the second capacitor is connected to the second end of the first inductor. The second end of the second capacitor is configured to be grounded through the second region.

[0038] Optionally, the RF power amplifier chip includes a matching circuit and a power amplifier transistor, wherein the ground terminal of the power amplifier transistor is configured to be grounded through the second region, and the components configured to be grounded in the matching circuit are grounded through the second region.

[0039] The radio frequency (RF) front-end module provided in this application includes a substrate, an RF power amplifier chip disposed on the substrate, a first region, and a second region. Both the first and second regions are grounded areas, and grounded components in the RF power amplifier chip are grounded through the second region. The projections of the first and second regions onto the same plane are spaced apart. This method isolates the first and second regions, preventing crosstalk between them (the RF grounding area of ​​the RF power amplifier chip), thereby improving the stability of the RF power amplifier chip, reducing overall losses, and enhancing the output efficiency, stability, and isolation between RF signals and analog / digital signals of the RF front-end module.

[0040] These or other aspects of this application will become more apparent in the following description of the embodiments. Attached Figure Description

[0041] Figure 1 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0042] Figure 2 It shows Figure 1 The diagram shows a partial structural cross-section of the RF front-end module.

[0043] Figure 3 It shows Figure 1 The diagram shows a partial structural cross-section of the RF front-end module.

[0044] Figure 4 It shows Figure 1 The diagram shows a partial structural cross-section of the RF front-end module.

[0045] Figure 5 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0046] Figure 6 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0047] Figure 7 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0048] Figure 8 A circuit diagram of the output load circuit in the RF front-end module provided in Embodiment 1 of this application is shown.

[0049] Figure 9 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0050] Figure 10 It shows Figure 9 The diagram shows a partial structural cross-section of the RF front-end module.

[0051] Figure 11 It shows Figure 9 The diagram shows a partial structural cross-section of the RF front-end module.

[0052] Figure 12 A schematic diagram of the RF front-end module provided in Comparative Example 1 is shown.

[0053] Figure 13 A schematic diagram of the RF front-end module provided in Comparative Example 2 is shown.

[0054] Figure 14 A comparison diagram of the inductance values ​​of the first inductor in Embodiment 1 of this application and the first inductor in the comparative example is shown;

[0055] Figure 15 A comparison chart of the quality factors of the first inductor in Embodiment 1 of this application and the first inductor in the comparative example is shown.

[0056] Figure 16 A comparison diagram of the inductance values ​​of the second inductor in Embodiment 1 of this application and the second inductor in the comparative example is shown;

[0057] Figure 17 A comparison chart of the quality factors of the second inductor in Embodiment 1 of this application and the second inductor in the comparative example is shown;

[0058] Figure 18 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0059] Figure 19 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 2 of this application is shown.

[0060] Figure 20A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 3 of this application is shown.

[0061] Figure 21 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 3 of this application is shown.

[0062] Figure 22 A circuit diagram of the output load circuit in the RF front-end module provided in Embodiment 3 of this application is shown.

[0063] Figure 23 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 3 of this application is shown.

[0064] Figure 24 It shows Figure 23 The diagram shows a partial structural cross-section of the RF front-end module.

[0065] Figure 25 It shows Figure 23 The diagram shows a partial structural cross-section of the RF front-end module.

[0066] Figure 26 A schematic diagram of the structure of the radio frequency front-end module provided in Embodiment 3 of this application is shown. Detailed Implementation

[0067] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0068] To enable those skilled in the art to better understand the solutions of this application, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0069] In the embodiments of this application, it should be noted that, in this document, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0070] Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0071] In the description of the embodiments of this application, the words "example" or "for example" are used to indicate exemplification, illustration, or description. Any embodiment or design described as "example" or "for example" in the embodiments of this application is not to be construed as being more preferred or having more advantages than another embodiment or design. The use of the words "example" or "for example" is intended to present relative concepts in a clear manner.

[0072] Furthermore, in the embodiments of this application, "multiple" refers to two or more. Therefore, in the embodiments of this application, "multiple" can also be understood as "at least two". "At least one" can be understood as one or more, such as one, two, or more. For example, including at least one means including one, two, or more, and is not limited to which ones are included. For example, including at least one of A, B, and C, then it could include A, B, C, A and B, A and C, B and C, or A and B and C.

[0073] It should be noted that in the embodiments of this application, "and / or" describes the relationship between associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. In addition, the character " / ", unless otherwise specified, generally indicates that the associated objects before and after it are in an "or" relationship.

[0074] It should be noted that in the embodiments of this application, "connection" can be understood as electrical connection. The connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be a direct connection between A and B, or an indirect connection between A and B through one or more other electrical components.

[0075] (Example 1)

[0076] Please refer to Figure 1One embodiment of this application provides a radio frequency front-end module 100, including a substrate 110, an inductor 120, and a first region 130. The substrate 110 includes a plurality of metal layers 111, all of which are sequentially disposed along a first direction. The inductor 120 includes at least one inductor winding 121, which is disposed on the metal layer 111. The first region 130 is disposed on the metal layer 111 and is a region with ground plane. The projection of the inductor winding 121 onto the first plane 200 is a first projection, and the projection of the first region 130 onto the first plane 200 is a second projection. There is a gap between the first projection and the second projection, and the minimum distance L between the first projection and the second projection is greater than or equal to 0.5 times the width W of the inductor 120. The first plane 200 is perpendicular to the first direction.

[0077] In this embodiment, the inductor winding 121 is spaced between the first projection of the first plane 200 and the second projection of the first region 130 on the first plane 200. Furthermore, the minimum distance L between the first projection and the second projection is greater than or equal to 0.5 times the width W of the inductor 120. This also prevents the RF energy from being coupled to the first region 130 due to the inductor 120 being too close to the first region 130, thereby reducing the overall loss and improving the output efficiency of the RF front-end module 100.

[0078] It is understandable that the minimum distance L between the first projection and the second projection refers to the distance between the point on the first projection closest to the second projection (point A) and the point on the second projection closest to the first projection (point B). Please refer to [reference needed]. Figure 1 As shown.

[0079] As an example, the minimum distance L between the first projection and the second projection can be 0.5 times, 0.6 times, 0.7 times, 0.8 times, 1 time, 1.4 times, 1.6 times or 2 times the width W of the inductor 120, etc.

[0080] In some implementation methods, please refer to Figure 1 The width W of the inductor 120 ranges from 50μm to 150μm. This not only avoids the increase in parasitic resistance and overall insertion loss of the inductor 120 due to its narrow width, but also avoids the inductor 120 being too close to the first region 130 due to its wide width. This avoids the increase in parasitic capacitance and overall insertion loss of the inductor 120. Therefore, this embodiment can effectively reduce the overall loss (e.g., output matching circuit) and improve the output efficiency of the RF front-end module 100.

[0081] As an example, the width W of the inductor 120 can be 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, 110μm, 120μm, 130μm, 140μm, or 150μm, etc.

[0082] In some implementations, the minimum distance L between the first projection and the second projection is greater than or equal to 0.7 times the width W of the inductor 120, which can further prevent radio frequency energy from being coupled to the first region 130 due to the inductor 120 being too close to the first region 130.

[0083] In some implementation methods, please refer to Figure 2 The metal layer 111 includes a first metal layer 111a, an inductor winding 121 is disposed on the first metal layer 111a, and a first region 130 is disposed on the first metal layer 111a. That is, in this embodiment, the inductor winding 121 and the first region 130 are located on the same metal layer 111.

[0084] In one implementation, the distance L1 between the inductor winding 121 on the first metal layer 111a and the first region 130 is greater than or equal to the width W of the inductor 120, thereby reducing the overall loss and improving the output efficiency of the RF front-end module 100.

[0085] As an example, please refer to Figure 2 The distance L1 between the inductor winding 121 on the first metal layer 111a and the first region 130 is 1 to 2 times the width W1 of the inductor winding 121 on the first metal layer 111a. It should be noted that the inductor 120 may include inductor windings 121 on other metal layers in addition to those on the first metal layer 111a. The widths of the inductor windings 121 on all metal layers 111 may be equal or unequal. That is, as an example, when the widths of the inductor windings 121 on all metal layers 111 are equal, the width W1 of the inductor winding 121 on the first metal layer 111a is the width W of the inductor 120. As another example, when the widths of the inductor windings 121 on all metal layers 111 are unequal, the width W of the inductor 120 is determined by the widest metal width Wmax among the different metal layers.

[0086] In this example, the distance L1 between the inductor winding 121 on the first metal layer 111a and the first region 130 is 1 to 2 times the width W1 of the inductor winding 121 on the first metal layer 111a. That is, the minimum distance between the inductor winding 121 on the first metal layer 111a and the first region 130 is not less than the width W1 of the inductor winding 121 on the first metal layer 111a, and the maximum distance between the inductor winding 121 on the first metal layer 111a and the first region 130 does not exceed twice the width W1 of the inductor winding 121 on the first metal layer 111a. This can effectively prevent the RF energy from coupling to the first region 130 due to the inductor 120 being too close to the first region 130, reduce the overall loss, improve the output efficiency of the RF front-end module 100, and the spatial layout is reasonable, which is more conducive to the miniaturization of the RF front-end module 100 structure.

[0087] In some implementation methods, please refer to Figure 3 The metal layer 111 includes a second metal layer 111b and a third metal layer 111c, which are disposed adjacent to each other. The second metal layer 111b is provided with an inductor winding 121, and the third metal layer 111c is provided with a first region 130. That is, in this embodiment, the inductor winding 121 and the first region 130 are located on adjacent metal layers.

[0088] In one implementation, the distance L2 between the projection of the inductor winding 121 of the second metal layer 111b onto the first plane 200 and the projection of the first region 130 of the third metal layer 111c onto the first plane 200 is greater than or equal to 0.8 times the width W of the inductor 120. Compared to the inductor winding 121 and the first region 130 located on the same metal layer 111, the coupling coefficient of the inductor winding 121 and the first region 130 located on adjacent metal layers 111 is smaller. Therefore, this implementation can not only effectively reduce overall losses and improve the output efficiency of the RF front-end module 100, but also has a reasonable spatial layout, which is more conducive to the miniaturization of the RF front-end module 100 structure.

[0089] As an example, please refer to Figure 3The distance L2 between the projection of the inductor winding 121 in the second metal layer 111b onto the first plane 200 and the projection of the first region 130 in the third metal layer 111c onto the first plane 200 is 0.8 to 1.6 times the width W2 of the inductor winding 121 in the second metal layer 111b. That is, the minimum distance between the projection of the inductor winding 121 in the second metal layer 111b onto the first plane 200 and the projection of the first region 130 in the third metal layer 111c onto the first plane 200 is not less than 0.8 times the width W2 of the inductor winding 121 in the second metal layer 111b, and the maximum distance between the projection of the inductor winding 121 in the second metal layer 111b onto the first plane 200 and the projection of the first region 130 in the third metal layer 111c onto the first plane 200 does not exceed 1.6 times the width W2 of the inductor winding 121 in the second metal layer 111b. It should be noted that, in addition to the inductor winding 121 located on the second metal layer 111b, the inductor 120 may also include inductor windings 121 located on other metal layers. The width of the inductor windings 121 on all metal layers 111 can be equal. That is to say, the width W2 of the inductor winding 121 located on the second metal layer 111b is the width W of the inductor 120.

[0090] In this example, the distance L2 between the projection of the inductor winding 121 of the second metal layer 111b onto the first plane 200 and the projection of the first region 130 of the third metal layer 111c onto the first plane 200 is 0.8 to 1.6 times the width W2 of the inductor winding 121 of the second metal layer 111b. This effectively avoids the coupling of radio frequency energy to the first region 130 caused by the inductor 120 being too close to the first region 130, reduces overall loss, improves the output efficiency of the radio frequency front-end module 100, further optimizes the spatial layout, and is more conducive to the miniaturization of the radio frequency front-end module 100 structure.

[0091] In some implementation methods, please refer to Figure 4 The metal layer 111 includes a fourth metal layer 111d and a sixth metal layer 111e. The fourth metal layer 111d and the sixth metal layer 111e are not adjacent. The fourth metal layer 111d is provided with an inductor winding 121, and the sixth metal layer 111e is provided with a first region 130. That is, in this embodiment, the inductor winding 121 and the first region 130 are located on non-adjacent metal layers, and at least one metal layer is provided between the fourth metal layer 111d and the sixth metal layer 111e.

[0092] In one implementation, the distance L3 between the projection of the inductor winding 121 on the first plane 200 and the projection of the first region 130 on the first plane 200 on the sixth metal layer 111e is greater than or equal to 0.7 times the width of the inductor 120. Compared to the inductor winding 121 and the first region 130 located on adjacent metal layers 111, the coupling coefficient of the inductor winding 121 and the first region 130 located on non-adjacent metal layers 111 is smaller. Therefore, this implementation can not only effectively reduce overall losses and improve the output efficiency of the RF front-end module 100, but also has a reasonable spatial layout, which is more conducive to the miniaturization of the RF front-end module 100 structure.

[0093] As an example, please refer to Figure 4 The distance L3 between the projection of the inductor winding 121 of the fourth metal layer 111d onto the first plane 200 and the projection of the first region 130 of the sixth metal layer 111e onto the first plane 200 is 0.7 to 1.4 times the width W3 of the inductor winding 121 of the fourth metal layer 111d. In other words, the minimum distance between the projection of the inductor winding 121 of the fourth metal layer 111d onto the first plane 200 and the projection of the first region 130 of the sixth metal layer 111e onto the first plane 200 is not less than 0.7 times the width W3 of the inductor winding 121 of the fourth metal layer 111d, and the maximum distance between the projection of the inductor winding 121 of the fourth metal layer 111d onto the first plane 200 and the projection of the first region 130 of the sixth metal layer 111e onto the first plane 200 does not exceed 1.4 times the width W3 of the inductor winding 121 of the fourth metal layer 111d. It should be noted that, in addition to the inductor winding 121 located on the fourth metal layer 111d, the inductor 120 may also include inductor windings 121 located on other metal layers, and the width of the inductor windings 121 on all metal layers 111 can be equal. That is to say, the width W3 of the inductor winding 121 located on the fourth metal layer 111d is the width W of the inductor 120.

[0094] In this example, the distance L3 between the projection of the inductor winding 121 of the fourth metal layer 111d onto the first plane 200 and the projection of the first region 130 of the sixth metal layer 111e onto the first plane 200 is 0.7 to 1.4 times the width W3 of the inductor winding 121 of the fourth metal layer 111d. This effectively avoids the coupling of radio frequency energy to the first region 130 caused by the inductor 120 being too close to the first region 130, reduces overall loss, improves the output efficiency of the radio frequency front-end module 100, further optimizes the spatial layout, and is more conducive to the miniaturization of the radio frequency front-end module 100 structure.

[0095] In some implementation methods, please refer to Figure 5The RF front-end module 100 also includes an RF power amplifier chip 140 and a second region 150. The RF power amplifier chip 140 is disposed on a substrate 110, and the second region 150 is disposed on the substrate 110. The second region 150 is a grounded area, and components configured to be grounded in the RF power amplifier chip 140 are grounded through the second region 150. A gap exists between the third projection of the second region 150 onto the first plane 200 and the second projection of the first region 130 onto the first plane 200. The RF power amplifier chip 140 is a chip integrating a power amplifier circuit. The RF power amplifier chip can employ any design process type, such as HBT (Heterojunction Bipolar Transistor), HEMT (Modulation Doped Field-Effect Transistor), pHEMT (Pseudomodulation Doped Heterojunction Field-Effect Transistor), and MESFET (Metal-Semiconductor Field-Effect Transistor). The power amplifier circuit can be any type of amplifier circuit, such as single-ended, differential, or Dougherty.

[0096] In this embodiment, the components configured to be grounded in the RF power amplifier chip 140 are grounded through the second region 150. The second region 150 has a gap between the third projection of the first plane 200 and the second projection of the first region 130 on the first plane 200. This gap can isolate the ground region of the RF power amplifier chip 140 from other surrounding regions, prevent crosstalk between the RF energy of each RF power amplifier chip 140, and prevent crosstalk between the RF power amplifier chip 140 and other chip modules, thereby improving the stability of the RF power amplifier chip 140 and increasing the isolation between the RF signal and other types of signals (e.g., analog signals).

[0097] In some implementation methods, please refer to Figure 5 The distance L4 between the third projection of the second region 150 on the first plane 200 and the second projection of the first region 130 on the first plane 200 is greater than or equal to 0.5 times the wavelength corresponding to the operating frequency band of the RF power amplifier chip 140. This further ensures the stability of the RF power amplifier chip 140 and further ensures the isolation between the RF signal and other types of signals (e.g., analog signals). It should be noted that the distance L4 between the third projection of the second region 150 on the first plane 200 and the second projection of the first region 130 on the first plane 200 is related to the operating frequency band of the RF power amplifier chip 140. The higher the operating frequency band of the RF power amplifier chip 140, the smaller the distance L4 between the third projection of the second region 150 on the first plane 200 and the second projection of the first region 130 on the first plane 200; conversely, the lower the operating frequency band of the RF power amplifier chip 140, the larger the distance L4 between the third projection of the second region 150 on the first plane 200 and the second projection of the first region 130 on the first plane 200.

[0098] In some implementations, components configured to be grounded in the RF power amplifier chip 140 are connected to the second region 150. Please refer to... Figure 5 The fourth projection of the RF power amplifier chip 140 on the first plane 200 and the third projection of the second region 150 on the first plane 200 at least partially overlap, which can avoid the messy layout caused by excessively long connecting lines and make the layout of the RF front-end module 100 more orderly.

[0099] In some implementation methods, please refer to Figure 6 The RF front-end module 100 also includes an output load circuit 160, which is disposed on the substrate 110 and connected to the output terminal of the RF power amplifier chip 140. The components configured to be grounded in the output load circuit 160 are grounded through the second region 150.

[0100] In this embodiment, although the output load circuit 160 of the RF power amplifier chip 140 is integrated on the substrate 110, the components configured to be grounded in the output load circuit 160 are grounded through the second region 150, thereby ensuring the stability of the RF power amplifier chip 140 and ensuring the isolation between the RF signal and other types of signals (e.g., analog signals).

[0101] In some implementation methods, please refer to Figure 6 The output load circuit 160 includes at least one grounded matching element 161, which is configured to be grounded through the second region 150.

[0102] In some implementations, the matching element 161 includes at least one of a capacitor, an inductor 120, and a resistor.

[0103] As an example, please refer to Figure 7 Matching element 161 includes inductor 120, one end of which is connected to the output of RF power amplifier chip 140, and the other end of which is grounded through second region 150.

[0104] As one implementation method, please refer to Figure 8The output load circuit 160 includes a first capacitor 170a, a first inductor 120a, a second capacitor 170b, and a second inductor 120b. The first end of the first capacitor 170a is connected to the output terminal 141 of the RF power amplifier chip 140, and the second end of the first capacitor 170a is connected to the signal output terminal 180 through the first inductor 120a. The first end of the second inductor 120b is connected to the second end of the first capacitor 170a, and the second end of the second inductor 120b is configured to be grounded through the second region 150. This ensures the stability of the RF power amplifier chip 140 and the isolation between the RF signal and other types of signals (e.g., analog signals).

[0105] Please refer to Figure 9 The first inductor 120a includes at least one first inductor winding 121a, the minimum distance L5 between the projection of the first inductor winding 121a onto the first plane 200 and the projection of the first region 130 onto the first plane 200 is greater than or equal to 0.5 times the width W4 of the first inductor 120a, and the width of the first inductor winding 121a is equal to the width W4 of the first inductor 120a; and / or, the second inductor 120b includes at least one second inductor winding 121b, the minimum distance L6 between the projection of the second inductor winding 121b onto the first plane 200 and the projection of the first region 130 onto the first plane 200 is greater than or equal to 0.5 times the width W5 of the second inductor 120b, and the width of the second inductor winding 121b is equal to the width W5 of the second inductor 120b.

[0106] This embodiment can avoid the coupling of radio frequency energy to the first region 130 caused by the first inductor 120a and / or the second inductor 120b being too close to the first region 130, thereby reducing the overall loss and improving the output efficiency and stability of the radio frequency front-end module 100.

[0107] As one implementation method, please refer to Figure 10 The distance L between the projection of the first inductor winding 121a onto the first plane 200 and the projection of the first region 130 located in the same metal layer 111 onto the first plane 200. 51 The distance L is 1 to 2 times the width W4 of the first inductor 120a, and the distance L between the projection of the first inductor winding 121a onto the first plane 200 and the projection of the first region 130 located in the adjacent metal layer 111 onto the first plane 200. 52 It is 0.8 to 1.6 times the width W4 of the first inductor 120a, and the distance L between the projection of the first inductor winding 121a onto the first plane 200 and the projection of the first region 130 of the non-adjacent metal layer 111 onto the first plane 200.53 It is 0.7 to 1.4 times the width W4 of the first inductor 120a, thereby reducing overall loss, improving the output efficiency of the RF front-end module 100, optimizing the spatial layout, and making it more conducive to the miniaturization of the RF front-end module 100 structure.

[0108] As one implementation method, please refer to Figure 11 The distance L between the projection of the second inductor winding 121b onto the first plane 200 and the projection of the first region 130 located in the same metal layer 111 onto the first plane 200. 61 The distance L between the projection of the second inductor winding 121b onto the first plane 200 and the projection of the first region 130 located in the adjacent metal layer 111 onto the first plane 200 is 1 to 2 times the width W5 of the second inductor 120b. 62 It is 0.8 to 1.6 times the width W5 of the second inductor 120b, and the distance L between the projection of the second inductor winding 121b onto the first plane 200 and the projection of the first region 130 of the non-adjacent metal layer 111 onto the first plane 200. 63 It is 0.7 to 1.4 times the width W5 of the second inductor 120b, thereby reducing overall loss, improving the output efficiency of the RF front-end module 100, optimizing the spatial layout, and making it more conducive to the miniaturization of the RF front-end module 100 structure.

[0109] As an example, please refer to Figure 9 In the illustrated embodiment, the width W4 of the first inductor 120a is 50μm to 150μm, and the minimum distance L5 between the projection of the first inductor winding 121a onto the first plane 200 and the projection of the first region 130 onto the first plane 200 is 1.5 times the width W4 of the first inductor 120a; the width W5 of the second inductor 120b is 50μm to 150μm, and the minimum distance L6 between the projection of the second inductor winding 121b onto the first plane 200 and the projection of the first region 130 onto the first plane 200 is 1.2 times the width W5 of the second inductor 120b.

[0110] Please refer to Figure 12 In Comparative Example 1, the width W6 of the first inductor 120a' is 1.5 times the width W4 of the first inductor 120a, and the minimum distance L7 between the projection of the first inductor winding 121a' onto the first plane 200 and the projection of the first region 130 onto the first plane 200 is 0.3 times the width W6 of the first inductor 120a'; the width W7 of the second inductor 120b' is 1.5 times the width W5 of the second inductor 120b, and the minimum distance L8 between the projection of the second inductor winding 121b' onto the first plane 200 and the projection of the first region 130 onto the first plane 200 is 0.3 times the width W7 of the second inductor 120b'.

[0111] Please refer to Figure 13 In Comparative Example 2, the width W8 of the first inductor 120a” is 0.5 times the width W4 of the first inductor 120a, and the minimum distance L9 between the projection of the first inductor winding 121a” onto the first plane 200 and the projection of the first region 130 onto the first plane 200 is 3 times the width W8 of the first inductor 120a”; the width W9 of the second inductor 120b” is 0.5 times the width W5 of the second inductor 120b, and the minimum distance L9 between the projection of the second inductor winding 121b” onto the first plane 200 and the projection of the first region 130 onto the first plane 200 is 3 times the width W8 of the first inductor 120a”; 10 It is 3 times the width W9 of the second inductor 120b".

[0112] Please refer to Figure 14 The diagram shows a comparison of inductance values, where curve S11 represents the inductance value of the first inductor 120a, curve S12 represents the inductance value of the first inductor 120a', and curve S13 represents the inductance value of the first inductor 120a”. Figure 14 It can be seen that the resonant frequency of the first inductor 120a is 7.4GHz, and the resonant frequencies of the first inductor 120a' and the first inductor 120a” are 6.6GHz. Therefore, among the three first inductors, the parasitic capacitance of the first inductor 120a is the smallest.

[0113] Please refer to Figure 15 The Q-value (quality factor) comparison chart shown includes curve S21, which represents the Q-value curve of the first inductor 120a; curve S22, which represents the Q-value curve of the first inductor 120a'; and curve S23, which represents the Q-value curve of the first inductor 120a”. Figure 15 It can be seen that the Q value of the first inductor 120a is higher than that of the first inductor 120a' and the first inductor 120a”. Therefore, the first inductor 120a can effectively reduce the overall loss.

[0114] Please refer to Figure 16 The inductance value comparison chart shown includes curve S31, which represents the inductance value of the second inductor 120b; curve S32, which represents the inductance value of the second inductor 120b'; and curve S33, which represents the inductance value of the second inductor 120b''. Please refer to the chart. Figure 17 The Q-value comparison chart shown indicates that curve S41 represents the Q-value of the second inductor 120b, curve S42 represents the Q-value of the second inductor 120b', and curve S43 represents the Q-value of the second inductor 120b”. Figure 16 and Figure 17 It can be seen that the second inductor 120b has the smallest inductance, the highest Q value, and the smallest parasitic resistance. Therefore, the second inductor 120b can effectively reduce the overall loss.

[0115] In some implementation methods, please refer to Figure 18 The output load circuit 160 includes an output transformer 162, the ground terminal of which is configured to be grounded through the second region 150, thereby ensuring the stability of the RF power amplifier chip 140 and ensuring the isolation between the RF signal and other types of signals (e.g., analog signals).

[0116] (Example 2)

[0117] Please refer to Figure 19 One embodiment of this application provides a radio frequency front-end module 300, including a carrier 310, an inductor 320, and a first region 330. The carrier 310 includes a plurality of metal layers 311, which are sequentially disposed along a first direction. The inductor 320 includes at least one inductor winding 321, which is disposed on the metal layer 311. The first region 330 is disposed on the metal layer 311 and is a region with ground plane. The inductor winding 321 is spaced between a first projection of a first plane 400 and a second projection of the first region 330 on the first plane 400, and the minimum distance L between the first projection and the second projection is greater than or equal to 0.5 times the width W of the inductor 320, wherein the first plane 400 is perpendicular to the first direction.

[0118] In this embodiment, the inductor winding 321 has a gap between the first projection of the first plane 400 and the second projection of the first region 330 on the first plane 400. Furthermore, the minimum distance L between the first projection and the second projection is greater than or equal to 0.5 times the width W of the inductor 320. This not only avoids the inductor 320 being too narrow, which would reduce the quality factor (Q value) of the circuit, but also avoids the RF energy from being coupled to the first region 330 due to the inductor 320 being too close to the first region 330. This reduces the overall loss and improves the output efficiency of the RF front-end module 300.

[0119] In some implementations, the minimum distance L between the first projection and the second projection is greater than or equal to 0.7 times the width W of the inductor 320, which can further prevent radio frequency energy from being coupled to the first region 330 due to the inductor 320 being too close to the first region 330.

[0120] In some embodiments, the carrier 310 may be a chip. In other embodiments, the carrier 310 may be a substrate.

[0121] It should be noted that Embodiment 2 is basically the same as Embodiment 1, so the same parts will not be described again here.

[0122] (Example 3)

[0123] Please refer to Figure 20 One embodiment of this application provides an RF front-end module 500, including a substrate 510, an RF power amplifier chip 540, a first region 530, and a second region 550. The RF power amplifier chip 540, the first region 530, and the second region 550 are disposed on the substrate 510. Both the first region 530 and the second region 550 are grounded regions. Components configured to be grounded in the RF power amplifier chip 540 are grounded through the second region 550. Components configured to be grounded in other functional modules of the RF front-end module 500 are grounded through the first region 530. The first region 530 and the second region 550 are spaced apart by projections onto the same plane.

[0124] In this embodiment, the first region 530 and the second region 550 are spaced apart by projection on the same plane, which can isolate the first region 530 and the second region 550. The components configured to be grounded in the RF power amplifier chip 540 are grounded through the second region 550. That is, this embodiment can isolate the RF grounding area of ​​the RF power amplifier chip 540 from other surrounding areas, preventing crosstalk between the RF energy of each RF power amplifier chip 540 and preventing crosstalk between the RF power amplifier chip 540 and other chip modules. This improves the stability of the RF power amplifier chip and the isolation between the RF signal and other types of signals (e.g., analog signals).

[0125] In some implementation methods, please refer to Figure 20 The distance L between the projections of the first region 530 and the second region 550 onto the same plane 11 The wavelength is greater than or equal to 0.5 times the wavelength corresponding to the operating frequency band of the RF power amplifier chip 540, thereby further ensuring the stability of the RF power amplifier chip 540 and further ensuring the isolation between the RF signal and other types of signals (e.g., analog signals).

[0126] In some implementations, components configured to be grounded in the RF power amplifier chip 540 are connected to the second region 550 via bonding wires. Please refer to... Figure 20 The projections of the RF power amplifier chip 540 and the second region 550 on the same plane at least partially overlap, which can avoid the messy layout caused by excessively long bonding lines and make the layout of the RF front-end module 500 more orderly.

[0127] In some implementation methods, please refer to Figure 21The RF front-end module 500 also includes an output load circuit 560, which is disposed on the substrate 510 and connected to the output terminal of the RF power amplifier chip 540. The components 561 configured to be grounded in the output load circuit 560 are grounded through the second region 550, thereby improving the stability of the RF power amplifier chip 540 and improving the isolation between the RF signal and other types of signals (e.g., analog signals).

[0128] As one implementation method, please refer to Figure 22 The output load circuit 560 includes a first capacitor 570a, a first inductor 520a, a second capacitor 570b, and a second inductor 520b. The first end of the first capacitor 570a is connected to the output terminal 541 of the RF power amplifier chip 540, and the second end of the first capacitor 570a is connected to the signal output terminal 580 through the first inductor 520a. The first end of the second inductor 520b is connected to the second end of the first capacitor 570a, and the second end of the second inductor 520b is configured to be grounded through the second region 550. This ensures the stability of the RF power amplifier chip 540 and the isolation between the RF signal and other types of signals (e.g., analog signals).

[0129] Please refer to Figure 23 The first inductor 520a includes at least one first inductor winding 521a, and the minimum distance L between the projection of the first inductor winding 521a onto the first plane 600 and the projection of the first region 530 onto the first plane 600 is... 11 Width W greater than or equal to the width of the first inductor 520A 10 0.5 times, the width of the first inductor winding 521a is equal to the width W of the first inductor 520a. 10 ; and / or, the second inductor 520b includes at least one second inductor winding 521b, the minimum distance L between the projection of the second inductor winding 521b onto the first plane 600 and the projection of the first region 530 onto the first plane 600 is... 12 Width W of the second inductor 520b is greater than or equal to 11 0.5 times, the width of the second inductor winding 521b is equal to the width W of the second inductor 520b. 11 .

[0130] This embodiment can avoid the coupling of radio frequency energy to the first region 530 caused by the first inductor 520a and / or the second inductor 520b being too close to the first region 530, thereby reducing the overall loss and improving the output efficiency of the radio frequency front-end module 500.

[0131] As one implementation method, please refer to Figure 24 The distance L between the projection of the first inductor winding 521a onto the first plane 600 and the projection of the first region 530 located in the same metal layer onto the first plane 600. 111 The width W of the first inductor is 520A. 10 The distance L between the projection of the first inductor winding 521a onto the first plane 600 and the projection of the first region 530 located in the adjacent metal layer onto the first plane 600 is 1 to 2 times that of the first inductor winding 521a. 112 The width W of the first inductor is 520A. 10 The distance L between the projection of the first inductor winding 521a onto the first plane 600 and the projection of the first region 530 located in the non-adjacent metal layer onto the first plane 600 is 0.8 to 1.6 times. 113 The width W of the first inductor is 520A. 10 This reduces overall losses by 0.7 to 1.4 times, improves the output efficiency of the RF front-end module 500, optimizes the spatial layout, and facilitates the miniaturization of the RF front-end module 500 structure.

[0132] As one implementation method, please refer to Figure 25 The distance L between the projection of the second inductor winding 521b onto the first plane 600 and the projection of the first region 530 located in the same metal layer onto the first plane 600. 121 The width W of the second inductor 520b 11 The distance L between the projection of the second inductor winding 521b onto the first plane 600 and the projection of the first region 530 located in the adjacent metal layer onto the first plane 600 is 1 to 2 times that of the second inductor winding 521b. 122 The width W of the second inductor 520b 11 The distance L between the projection of the second inductor winding 521b onto the first plane 600 and the projection of the first region 530 located in the non-adjacent metal layer onto the first plane 600 is 0.8 to 1.6 times that of the second inductor winding 521b. 123 The width W of the second inductor 520b 11 This reduces overall losses by 0.7 to 1.4 times, improves the output efficiency of the RF front-end module 500, optimizes the spatial layout, and facilitates the miniaturization of the RF front-end module 500 structure.

[0133] In some implementation methods, please refer to Figure 26The RF power amplifier chip 540 includes a matching circuit 542 and a power amplifier transistor 543. The ground terminal of the power amplifier transistor 543 is configured to be grounded through a second region 550. The components in the matching circuit 542 that are configured to be grounded are also grounded through the second region 550. This isolates the ground region of the RF power amplifier chip 540 from other surrounding regions, preventing crosstalk between the RF energy of each RF power amplifier chip 540 and crosstalk between the RF power amplifier chip 540 and other chip modules. This improves the stability of the RF power amplifier chip 540 and increases the isolation between the RF signal and other types of signals (e.g., analog signals).

[0134] As an example, the power amplifier transistor 543 can be a metal-oxide-semiconductor (MOS) field-effect transistor, a bipolar junction transistor (BJT), or a heterojunction bipolar transistor (HBT).

[0135] It should be noted that Embodiment 3 is basically the same as Embodiment 1, so the same parts will not be described again here.

[0136] The above description is merely an embodiment of this application. It should be noted that those skilled in the art can make improvements without departing from the inventive concept of this application, but these improvements all fall within the protection scope of this application.

Claims

1. A radio frequency front-end module, characterized in that, include: The substrate includes a plurality of metal layers sequentially disposed along a first direction; An inductor, comprising at least one inductor winding disposed on at least one of the metal layers thereon; A first region is disposed on the metal layer, and the first region is a region where ground is laid; Wherein, the inductor winding has a gap between a first projection on a first plane and a second projection of the first region on the first plane, and the minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction.

2. The radio frequency front-end module as described in claim 1, characterized in that, The width of the inductor ranges from 50μm to 150μm.

3. The radio frequency front-end module as described in claim 1, characterized in that, The minimum distance between the first projection and the second projection is greater than or equal to 0.7 times the width of the inductor.

4. The radio frequency front-end module as described in claim 1, characterized in that, The metal layer includes a first metal layer, the inductor winding and the first region are disposed on the first metal layer, and the distance between the inductor winding and the first region located on the first metal layer is 1 to 2 times the width of the inductor.

5. The radio frequency front-end module as described in claim 1, characterized in that, The metal layer includes a second metal layer and a third metal layer, which are disposed adjacent to each other. The second metal layer is provided with the inductor winding, and the third metal layer is provided with the first region. The distance between the projection of the inductor winding of the second metal layer onto the first plane and the projection of the first region of the third metal layer onto the first plane is 0.8 to 1.6 times the width of the inductor.

6. The radio frequency front-end module as described in claim 1, characterized in that, The metal layer includes a fourth metal layer and a sixth metal layer, which are not adjacent. The fourth metal layer is provided with the inductor winding, and the sixth metal layer is provided with the first region. The distance between the projection of the inductor winding of the fourth metal layer onto the first plane and the projection of the first region of the sixth metal layer onto the first plane is 0.7 to 1.4 times the width of the inductor.

7. The radio frequency front-end module as described in claim 1, characterized in that, The radio frequency front-end module further includes a radio frequency power amplifier chip and a second region disposed on the substrate, wherein the second region is a grounded area, and the components configured to be grounded in the radio frequency power amplifier chip are grounded through the second region, and there is a gap between the third projection of the second region on the first plane and the second projection of the first region on the first plane.

8. The radio frequency front-end module as described in claim 7, characterized in that, The minimum distance between the third projection of the second region onto the first plane and the second projection of the first region onto the first plane is greater than or equal to 1 / 2 of the wavelength corresponding to the operating frequency band of the RF power amplifier chip.

9. The radio frequency front-end module as described in claim 7, characterized in that, The fourth projection of the radio frequency power amplifier chip onto the first plane at least partially overlaps with the third projection of the second region onto the first plane.

10. The radio frequency front-end module as described in claim 7, characterized in that, The RF front-end module also includes an output load circuit disposed on the substrate. The output load circuit is connected to the output terminal of the RF power amplifier chip. Components configured to be grounded in the output load circuit are grounded through the second area.

11. The radio frequency front-end module as described in claim 10, characterized in that, The output load circuit includes at least one grounded matching element configured to be grounded through the second region.

12. The radio frequency front-end module as described in claim 11, characterized in that, The matching element includes a capacitor, an inductor, or a resistor.

13. The radio frequency front-end module as described in claim 10, characterized in that, The output load circuit includes an output transformer, the grounding terminal of which is configured to be grounded through the second region.

14. The radio frequency front-end module as described in claim 10, characterized in that, The output load circuit includes a first capacitor, a first inductor, a second capacitor, and a second inductor. The first end of the first capacitor is connected to the output end of the RF power amplifier chip. The second end of the first capacitor is connected to the signal output end through the first inductor. The first end of the second inductor is connected to the second end of the first capacitor. The second end of the second inductor is configured to be grounded through the second region. The first end of the second capacitor is connected to the second end of the first inductor. The second end of the second inductor is configured to be grounded through the second region.

15. A radio frequency front-end module, characterized in that, include: The carrier includes multiple metal layers sequentially disposed along a first direction; An inductor, comprising at least one inductor winding disposed on at least one of the metal layers thereon; A first region is disposed on the metal layer, and the first region is a region where ground is laid; Wherein, the inductor winding has a gap between a first projection on a first plane and a second projection of the first region on the first plane, and the minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction.

16. The radio frequency front-end module as described in claim 15, characterized in that, The minimum distance between the first projection and the second projection is greater than or equal to 0.7 times the width of the inductor.

17. The radio frequency front-end module as described in claim 15, characterized in that, The carrier is a chip or a substrate.

18. A radio frequency front-end module, characterized in that, include: A substrate, and an RF power amplifier chip disposed on the substrate, a first region, and a second region; wherein the first region and the second region are both grounded regions, and the components configured to be grounded in the RF power amplifier chip are grounded through the second region, and the components configured to be grounded in other functional modules of the RF front-end module are grounded through the first region. There is a gap between the projections of the first region and the second region onto the same plane.

19. The radio frequency front-end module as described in claim 18, characterized in that, The minimum distance between the projections of the first region and the second region onto the same plane is greater than or equal to 1 / 2 of the wavelength corresponding to the operating frequency band of the RF power amplifier chip.

20. The radio frequency front-end module as described in claim 18, characterized in that, The projection of the radio frequency power amplifier chip onto the second region on the same plane at least partially overlaps.

21. The radio frequency front-end module as described in claim 18, characterized in that, The RF front-end module also includes an output load circuit disposed on the substrate. The output load circuit is connected to the output terminal of the RF power amplifier chip. Components configured to be grounded in the output load circuit are grounded through the second area.

22. The radio frequency front-end module as described in claim 21, characterized in that, The output load circuit includes a first capacitor, a first inductor, a second capacitor, and a second inductor. The first end of the first capacitor is connected to the output end of the RF power amplifier chip. The second end of the first capacitor is connected to the signal output end through the first inductor. The first end of the second inductor is connected to the second end of the first capacitor. The second end of the second inductor is configured to be grounded through the second region. The first end of the second capacitor is connected to the second end of the first inductor. The second end of the second capacitor is configured to be grounded through the second region.

23. The radio frequency front-end module as described in claim 18, characterized in that, The radio frequency power amplifier chip includes a matching circuit and a power amplifier transistor. The ground terminal of the power amplifier transistor is configured to be grounded through the second region, and the components in the matching circuit configured to be grounded are grounded through the second region.

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