On-chip polarization sensitive photoelectric detection system and preparation method thereof

Abstract

The invention relates to an on-chip polarization sensitive photoelectric detection system and a preparation method thereof, and belongs to the technical field of photoelectric detectors. According to the invention, the on-chip polarization sensitive photoelectric detection system is obtained by integrating the non-polarization sensitive detection material and the field effect transistor, and the system realizes high-performance polarized light detection with high polarization ratio and low noise. According to the on-chip polarization-sensitive photoelectric detection system prepared by the invention, on one hand, polarization absorption of light by a non-polarization-sensitive detection material such as a plasma metal electrode in a two-dimensional WSe2 photoelectric detector is utilized, and the light is converted into hot electrons and then injected into a channel to generate polarized light response; on the other hand, the generated polarized light response is further amplified under the signal amplification effect of the transistor, and the practical application standard is achieved. The method breaks the dependence on the anisotropy of the material, and can reach the practical application standard without increasing the process complexity.

Description

Technical Field

[0001] The present invention belongs to the technical field of photoelectric detectors, and in particular relates to an on-chip polarization-sensitive photoelectric detection system and a preparation method thereof. Background Art

[0002] Polarized light can provide detailed information about an object and can be artificially modulated as an information carrier. However, conventional polarization-sensitive photodetectors rely on a combined system of polarization light elements and standard photodetectors, which requires a lot of space and manufacturing costs. Two-dimensional materials have excellent optoelectronic and physical properties and have great potential in solving the above limitations. In particular, two-dimensional materials with low-symmetry crystal structures have been verified to achieve polarized light detection without the need for polarization light elements, opening up new avenues for the development of on-chip polarization-sensitive light detection. However, to date, most polarization-sensitive photodetectors based on two-dimensional materials with low-symmetry crystal structures still face challenges such as limited response rate, low signal-to-noise ratio, and low anisotropy ratio. In addition, the types of two-dimensional materials with low-symmetry crystal structures are only a small part of the large family of two-dimensional materials (only dozens of species), which hinders the further development of their applications.

[0003] Some existing strategies, such as preparing heterostructures and coupling artificial nanostructures, can achieve polarization detection, but these methods are not universally applicable and face huge challenges in preparation technology, large-area integration, and processing technology. Therefore, it is of great application value to seek a preparation method that does not rely on the anisotropy of materials and complex nanostructures to achieve high-performance polarized light on-chip detection systems. Summary of the invention

[0004] The present invention aims to solve the technical problems in the prior art and provides an on-chip polarization-sensitive photoelectric detection system and a preparation method thereof.

[0005] In order to solve the above technical problems, the technical solutions of the present invention are as follows:

[0006] A method for preparing an on-chip polarization-sensitive photoelectric detection system is to integrate a non-polarization-sensitive detection material with a field effect transistor to prepare the on-chip polarization-sensitive photoelectric detection system.

[0007] In the above technical solution, the non-polarization sensitive detection material is a two-dimensional material WSe2.

[0008] In the above technical solution, the preparation method comprises the following steps:

[0009] MoS2, hBN (hexagonal boron nitride), graphene prepared by mechanical exfoliation (gate electrode), and WSe2 flakes are transferred to the substrate in turn, and the source electrode, drain electrode and gate electrode are prepared by photolithography, thermal evaporation and exfoliation techniques. They are then integrated through a metal interconnection process to prepare an on-chip polarization-sensitive photoelectric detection system.

[0010] In the above technical solution, the substrate is a SiO2 / Si substrate.

[0011] In the above technical solution, further, the preparation method comprises the following steps:

[0012] Step 1: Clean the SiO2 P-type doped silicon wafer with deionized water, ethanol, acetone, and isopropanol, respectively, and then blow dry the silicon wafer with a nitrogen gun;

[0013] Step 2, using a dry transfer method to transfer MoS2 onto the silicon wafer substrate processed in step 1, and then using a directional transfer method to sequentially transfer hBN and graphene onto MoS2;

[0014] Step 3: Using a dry transfer method to transfer WSe2 onto the silicon wafer substrate in step 2 as a photosensitive module;

[0015] Step 4: Using a directional transfer method to transfer WSe2 at a fixed position on the silicon wafer substrate in step 3, as a reference resistor (Ref);

[0016] Alternatively, the chip resistor is fixed at a specific position on the silicon wafer substrate in step 3;

[0017] Step 5: Prepare a source electrode, a drain electrode and a gate electrode on the silicon wafer substrate of step 4 respectively by using photolithography, thermal evaporation and stripping technology;

[0018] Step 6: Integrate the silicon wafer substrate of step 5 through a metal interconnection process to obtain an on-chip polarization-sensitive photoelectric detection system.

[0019] In the above technical solution, further, the drying in step 1 is specifically: drying in a drying oven at 60° C. for two hours.

[0020] In the above technical solution, further, in step 1, the thickness of the P-type doped silicon wafer of SiO2 is 300nm.

[0021] In the above technical solution, further, the metal interconnection process in step 6 is a gold wire ball bonding process.

[0022] An on-chip polarization-sensitive photoelectric detection system prepared by any of the above-mentioned preparation methods.

[0023] The beneficial effects of the present invention are:

[0024] The method for preparing the on-chip polarization-sensitive photoelectric detection system of the present invention integrates non-polarization-sensitive detection materials with field-effect transistors, thereby achieving high-performance polarized light detection with high polarization ratio and low noise.

[0025] The on-chip polarization-sensitive photodetection system prepared by the present invention, on the one hand, utilizes the polarization absorption of light by the plasma metal electrode in the non-polarization-sensitive detection material, such as the two-dimensional WSe2 photodetector, which is converted into hot electrons and then injected into the channel to generate polarized light response; on the other hand, under the signal amplification effect of the transistor, the generated polarized light response is further amplified to meet the practical application standards. This method breaks the dependence on material anisotropy and can meet the practical application standards without increasing the complexity of the process. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0027] Figure 1 It is a schematic diagram of the preparation process of the on-chip polarization-sensitive photoelectric detection system of the present invention.

[0028] Figure 2 This is a relationship diagram between the photocurrent and polarization angle of the on-chip polarization-sensitive photodetection system prepared in Example 2 experimentally tested at 980nm and 1064nm. DETAILED DESCRIPTION

[0029] The present invention is described in detail below with reference to the accompanying drawings and embodiments.

[0030] Embodiment 1:

[0031] See the schematic diagram of the preparation process of the on-chip polarization-sensitive photodetection system of the present invention. Figure 1 , the specific steps are as follows:

[0032] Step 1: Prepare a P-type doped silicon wafer with 300nm thick SiO2, clean it with deionized water, ethanol, acetone, and isopropanol, blow dry the silicon wafer with a nitrogen gun, and dry it in a drying oven at 60°C for two hours;

[0033] Step 2: MoS2 is transferred onto a silicon wafer by a dry transfer method, and then hBN and graphene are sequentially transferred onto MoS2 by a directional transfer method;

[0034] Step 3: Using a dry transfer method to transfer WSe2 onto a silicon wafer as a photosensitive module;

[0035] Step 4: Use a directional transfer method to transfer WSe2 at a fixed position on the silicon wafer (the fixed position is centered on MoS2 and symmetrical to the photosensitive module WSe2) as a reference resistor (Ref);

[0036] Step 5: Prepare the source electrode, drain electrode and gate electrode by photolithography, thermal evaporation and stripping technology, and the materials of the three electrodes are all Ti / Au;

[0037] Step 6: Integrate it through a gold wire ball bonding process for subsequent testing.

[0038] Embodiment 2:

[0039] See the schematic diagram of the preparation process of the on-chip polarization-sensitive photodetection system of the present invention. Figure 1 , the specific steps are as follows:

[0040] Step 1: Prepare a P-type doped silicon wafer with 300nm thick SiO2, clean it with deionized water, ethanol, acetone, and isopropanol, blow dry the silicon wafer with a nitrogen gun, and dry it in a drying oven at 60°C for two hours;

[0041] Step 2: MoS2 is transferred onto a silicon wafer by a dry transfer method, and then hBN and graphene are sequentially transferred onto MoS2 by a directional transfer method;

[0042] Step 3: Using a dry transfer method to transfer WSe2 onto a silicon wafer as a photosensitive module;

[0043] Step 4, fix the chip resistor (Ref) at a specific position on the required silicon wafer (the specific position is centered on MoS2 and symmetrical to the photosensitive module WSe2);

[0044] Step 5: Prepare the source electrode, drain electrode and gate electrode by photolithography, thermal evaporation and stripping technology, and the materials of the three electrodes are all Ti / Au;

[0045] Step 6: Integrate it through a gold wire ball bonding process for subsequent testing.

[0046] Figure 2 The relationship diagram of the photocurrent and polarization angle of the on-chip polarization-sensitive photodetection system prepared in Example 2 is experimentally tested at 980nm and 1064nm. It can be seen from the figure that the anisotropic photocurrent ratio at 980nm is about 57, and the anisotropic photocurrent ratio at 1064nm is about 60.

[0047] In summary, the on-chip polarization-sensitive photoelectric detection system prepared by the present invention uses isotropic materials combined with plasmon metal electrodes to prepare polarization photodetectors, breaking the dependence on low-symmetry materials and avoiding the need for additional difficult processes that require coupling of complex nanostructures, providing a universal way to give polarization-sensitive characteristics to polarization photodetectors. By integrating transistors on a chip, the signal amplification unit is directly integrated into the system, which ensures the quality of information while further amplifying the output signal of the system to produce a polarization ratio that meets the actual application standards, providing a universal method for improving the performance of photodetectors.

[0048] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A method for preparing an on-chip polarization-sensitive photoelectric detection system, characterized in that: An on-chip polarization-sensitive photoelectric detection system is prepared by integrating non-polarization-sensitive detection materials with field-effect transistors.

2. The preparation method according to claim 1, characterized in that: The non-polarization-sensitive detection material is a two-dimensional material WSe2.

3. The preparation method according to claim 1, characterized in that: The following steps are involved: MoS2, hBN, graphene prepared by mechanical exfoliation, and WSe2 flakes are transferred to the substrate in turn, and the source electrode, drain electrode and gate electrode are prepared by photolithography, thermal evaporation and exfoliation techniques. They are then integrated through a metal interconnection process to prepare an on-chip polarization-sensitive photoelectric detection system.

4. The preparation method according to claim 3, characterized in that: The substrate is a SiO2 / Si substrate.

5. The preparation method according to claim 1, characterized in that: The steps include: Step 1: Clean the SiO2 P-type doped silicon wafer with deionized water, ethanol, acetone, and isopropanol, respectively, and then blow dry the silicon wafer with a nitrogen gun; Step 2, using a dry transfer method to transfer MoS2 onto the silicon wafer substrate treated in step 1, and then using a directional transfer method to sequentially transfer hBN and graphene onto MoS2; Step 3: Using a dry transfer method to transfer WSe2 onto the silicon wafer substrate in step 2 as a photosensitive module; Step 4: Using a directional transfer method, transfer WSe2 to a fixed position on the silicon wafer substrate in step 3 as a reference resistor; Alternatively, the chip resistor is fixed at a specific position on the silicon wafer substrate in step 3; Step 5: Prepare a source electrode, a drain electrode and a gate electrode on the silicon wafer substrate of step 4 respectively by using photolithography, thermal evaporation and stripping technology; Step 6: Integrate the silicon wafer substrate of step 5 through a metal interconnection process to obtain an on-chip polarization-sensitive photoelectric detection system.

6. The preparation method according to claim 5, characterized in that: The drying in step 1 is specifically: drying in a drying oven at 60° C. for two hours.

7. The preparation method according to claim 5, characterized in that: The thickness of the P-type doped silicon wafer of SiO2 in step 1 is 300nm.

8. The preparation method according to claim 5, characterized in that: The metal interconnection process in step 6 is a gold wire ball bonding process.

9. An on-chip polarization-sensitive photoelectric detection system prepared by the preparation method according to any one of claims 1 to 8.

Images