A microstructure-enhanced room-temperature ultra-wideband detector with blackbody-sensitive response

Abstract

The present invention discloses a microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response, comprising a metal disk microstructure array, a strip metal electrode and a lead electrode integrated on a Si / SiO2 substrate, wherein the two sides of the metal disk microstructure array are in asymmetric electrode contact, one side is connected to the first strip metal electrode through the lead electrode, and the opposite side is connected to the second strip metal electrode through a tellurium nanoribbon conductive channel with blackbody sensitivity and ultra-wide spectrum response, forming a good ohmic contact. The present invention broadens the response range of the waveband from visible to terahertz, and realizes ultra-wide spectrum detection, self-driving, low dark current and high response photoelectric detection with blackbody sensitivity at room temperature.

Description

Technical Field

[0001] The invention belongs to the field of optoelectronic technology, and in particular relates to a microstructure enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response. Background Art

[0002] The electromagnetic spectrum covers a wide frequency range from gamma rays to radio waves, and each frequency band has great scientific significance and application value for mankind. Photodetectors, as the key technology for converting optical signals of electromagnetic waves into electrical signals, play an important role in analyzing information in the field of modern science and technology. For example, light detectors that can detect the ultraviolet spectrum are widely used in industry and medicine. The detection of visible light is the basis of digital camera technology. In the electromagnetic spectrum, the adjacent bands of infrared IR and terahertz THz occupy an important position. Infrared photodetectors are well known to the public for their wide application in infrared thermometers. They also have extensive and in-depth applications in fields other than medicine, such as military reconnaissance, night vision equipment, security monitoring, and environmental monitoring. In the terahertz band, due to its low energy characteristics, terahertz light-frequency between 0.1 and 10 THz has significant application value in safety inspection and non-destructive testing. Extending to the terahertz region, due to its low energy characteristics, the unique advantages of terahertz-0.1 to 10 THz spectroscopy in analyzing the absorption characteristics of materials make it an ideal tool for studying large biomolecules and achieving high-resolution biomedical imaging. In addition, terahertz light detectors also play a key role in high-speed data communications and astronomical remote sensing.

[0003] In recent years, thanks to advanced optoelectronic materials and innovative sensor designs, infrared and terahertz detector technology has made significant progress. However, due to the ever-expanding wavelength range that needs to be covered, traditional single infrared or terahertz photodetectors can no longer meet the complex needs of optoelectronic sensing. Traditional optoelectronic devices mostly use specific photoelectric absorption semiconductor materials, such as InGaAs in the near-infrared region, mercury cadmium telluride in the mid-infrared band, and long-infrared mercury cadmium telluride and quantum well infrared detector materials. The absorption characteristics of these materials are limited by their band gaps, which directly affect the detection range of optoelectronic devices. The wider the band gap, the shorter the wavelength range of light that the material can absorb, which directly limits the detection range of optoelectronic devices. Therefore, the development of high-performance broadband photodetectors has become a hot topic of research. The ultraviolet / optical / infrared astronomical observatory developed by NASA will take the lead in detecting exoplanets similar to the Earth, trying to find evidence of life inside and outside the solar system. A German remote sensing research team proposed an orbiting multi-spectral dynamic infrared earth observation sensor that contains 11 spectral bands and is designed to fill the gap in long-wave infrared observations. In addition to these applications, SiGe broadband visible-near infrared imagers also provide complex environment perception capabilities for the military, including day and night vision, biochemical threat detection, muzzle flash detection, etc. The purpose of extending the detection capability of photodetectors from the infrared band to the terahertz band to cover the wavelength range from a few microns to hundreds of microns is to overcome the limitations of traditional infrared and microwave technologies in terms of single technology. It is expected that high-performance infrared to terahertz broadband photodetectors will not only enhance existing applications in astronomy and military technology, but also bring new opportunities for applications in optical communications, spectroscopy, medical imaging, environmental monitoring and other fields.

[0004] Currently, researchers are exploring the use of ultra-wideband photodetectors, especially those based on two-dimensional van der Waals materials, such as single-layer and double-layer graphene, black phosphorus, and Bi2Te3-x Sex. The unique properties of two-dimensional materials, such as high carrier mobility, provide the possibility of improving the performance of photodetection, making the material selection range of detectors wider, and are expected to make new breakthroughs in achieving higher sensitivity, wider spectral response, and room temperature operation. In particular, tellurium, as a new type of layered element semiconductor, exhibits physical properties such as high carrier mobility, good photoconductivity, adjustable band gap of 0.35-1.2 eV, and excellent air stability, making it a potential candidate material for broadband photodetection of photoelectric or thermoelectric devices. In addition, the high thermoelectric figure of merit of tellurium - the Seebeck coefficient of tellurium nanowires is 408 μVK^-2, which makes it possible for multi-band broadband detection of photoelectric or thermoelectric devices. Tellurium-based photodetectors have shown good performance in the visible light (VIS) and infrared (IR) bands. However, there is relatively little research on the development of ultra-wideband photodetectors that can cover the visible light to infrared bands and even to the terahertz band, which provides a new direction for future research worthy of in-depth exploration.

[0005] Room-temperature ultra-wide spectrum detectors face some practical problems in achieving ultra-wideband spectral detection from visible light to the terahertz band. First, it is difficult for existing materials and technologies to simultaneously meet the requirements of high sensitivity, wide spectral response, and room-temperature operation. Secondly, although two-dimensional materials such as graphene and black phosphorus have high carrier mobility and good photoconductivity, they still have problems such as complex preparation processes and high costs in practical applications. In addition, as a new type of layered element semiconductor, although tellurium exhibits excellent physical properties, its application research in photoelectric or thermoelectric multi-element broadband detection is relatively small, and further exploration and improvement are needed.

[0006] Therefore, it is particularly important to explore new physical mechanisms and material systems to achieve detection in an ultra-wide spectral range from infrared to terahertz. Summary of the invention

[0007] The object of the present invention is to provide a microstructure enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response in view of the problems in the prior art.

[0008] To this end, the above-mentioned purpose of the present invention is achieved through the following technical solutions:

[0009] A microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response, characterized in that: a metal disk microstructure array, a strip metal electrode and a lead electrode are integrated on a Si / SiO2 substrate, two sides of the metal disk microstructure array are in asymmetric electrode contact, one side is connected to the first strip metal electrode through the lead electrode, and the opposite side is connected to the second strip metal electrode through a tellurium nanoribbon conductive channel with blackbody sensitivity and ultra-wide spectrum response, forming a good ohmic contact;

[0010] Tellurium materials with narrow band gap and high thermoelectric figure of merit are used as conductive channels. Combined with the differentiated absorption and photoelectric and photothermal conversion mechanisms of tellurium nanomaterials in the visible-terahertz band, an asymmetric device structure of a metal disk microstructure array is introduced. The local enhancement or local scattering enhancement of the light field of the metal disk microstructure array induces changes in carrier concentration or thermal distribution, and light field distribution, broadening the response range of the band from visible to terahertz, and realizing ultra-wide spectrum detection, self-driven, low dark current, and high-response photoelectric detection with blackbody sensitivity at room temperature.

[0011] While adopting the above technical solutions, the present invention may also adopt or combine the following technical solutions:

[0012] As a preferred technical solution of the present invention: the metal disk microstructure array is an array of metal disk microstructures arranged periodically, and the spacing between each metal disk microstructure is 100 nm to 300 nm;

[0013] The metal disk microstructure is made of Au material, with a disk diameter of 1μm ~1.5μm and a thickness of 50 nm ~60 nm.

[0014] As a preferred technical solution of the present invention: the first strip metal electrode, the second strip metal electrode and the lead electrode are Cr / Au metal composite electrodes with a thickness of 90 nm ~110 nm, wherein the thickness of the Cr layer is 5 nm ~15 nm and the thickness of the Au layer is 85 nm ~95 nm.

[0015] As a preferred technical solution of the present invention: the tellurium nanoribbon conductive channel has a length of 25 μm to 40 μm, a width of 2 μm to 8 μm, and a thickness of 300 nm to 800 nm.

[0016] As a preferred technical solution of the present invention: the thickness of the Si / SiO2 substrate is 0.5 mm to 1 mm.

[0017] Compared with the prior art, the microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response of the present invention has the following beneficial effects: the present invention uses a two-terminal device with a narrow bandgap and high thermoelectric figure of merit material as a basic structural unit, integrates a group of metal disk microstructures and asymmetric electrode contacts at both ends of a strip metal, and an infrared to terahertz hyperspectral detector of metal disk microstructure / tellurium nanoribbon / strip metal electrode / Si / SiO2 substrate under room temperature conditions, which has a self-powered, highly sensitive, highly responsive and integrated photoconductive or photovoltaic detection working mode.

[0018] Specifically:

[0019] 1. By utilizing the photoexcited carrier distribution and high thermoelectric figure of merit of narrow bandgap materials, combined with the differentiated absorption and multi-electroelectric conversion mechanism of the materials in the visible-terahertz band, a special device structure is introduced to broaden the response range from visible to terahertz, achieving the detection performance of the device with ultra-wide spectrum blackbody sensitivity at room temperature.

[0020] 2. The wavelength of the terahertz band is long, and reducing the size of the device will lead to a significant diffraction effect. We need to design and prepare a high-performance metal disk structure to improve free-space impedance matching, achieve strong light field coupling and distribution at sub-wavelength sizes, and enhance the device's ultra-wide-spectrum light field localization and integration through microstructure enhancement.

[0021] 3. Utilizing the significant photovoltaic effect at the contact between metal and tellurium materials, combined with the asymmetric contact device consisting of a group of metal disk microstructures-tellurium material ohmic contacts and strip metal-tellurium ohmic contacts, the mirror symmetry of the built-in potential between metal and semiconductor is broken, so that the image currents of the device cannot cancel each other out under full light irradiation, and a large net photocurrent is generated externally. The asymmetric structure of the device further induces high self-drive, low dark current noise, and high response photoelectric detection capabilities.

[0022] The present invention discloses a microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response, which is an asymmetric contact device composed of a group of metal microstructure-tellurium material ohmic contacts and strip metal-tellurium ohmic contacts. It breaks the mirror symmetry of the built-in potential between metal and semiconductor, so that the mirror currents of the device cannot cancel each other out under full light irradiation and a large net photocurrent is generated externally. The asymmetric structure of the device further induces high self-drive, low dark current noise, and high response photoelectric detection capabilities, and has great application prospects in the field of photoelectric detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic top view of a detection structure unit and an enlarged schematic view of a metal disk microstructure of an embodiment of a microstructure-enhanced room-temperature ultra-wide spectrum detector structure with blackbody sensitive response according to the present invention;

[0024] Figure 2 for Figure 1 A schematic side view of the structure of a microstructure enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response is shown;

[0025] Figure 3 The channel current-voltage characteristic curve of a microstructure-enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response in a light-free environment at room temperature of the present invention;

[0026] Figure 4 It is a time-resolved light response diagram of a microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response in the visible light to terahertz band of the present invention;

[0027] Figure 5 It is a spectrum diagram of the light response current of a microstructure enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response at room temperature according to the terahertz carrier frequency sweep;

[0028] Figure 6 It is a characteristic curve diagram of the light response current versus bias voltage in different bands of a microstructure enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response at room temperature of the present invention;

[0029] Figure 7 It is a time-resolved waveform response diagram of the light response current of a microstructure-enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response at room temperature as a function of the laser irradiation power;

[0030] Figure 8 It is a distribution diagram of the light response current of a microstructure-enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response according to the present invention, when the laser scans from one end of the metal disk microstructure of the device to the other end of the strip metal electrode;

[0031] Fig. 9 This is a diagram of the optical response speed of a microstructure-enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response under terahertz radiation of the present invention;

[0032] Fig.10 A microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response under blackbody radiation at different temperatures, and the waveform response diagram of the device's photoresponse current changing with the blackbody temperature.

[0033] Silicon substrate 1, silicon oxide 2, tellurium nanoribbon conductive channel 3, metal disk microstructure array 4, metal disk microstructure 401; first strip metal electrode 5; second strip metal electrode 6; lead electrode 7. DETAILED DESCRIPTION

[0034] The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.

[0035] The present invention discloses a microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response, which takes a two-terminal device with a narrow bandgap and high thermoelectric figure of merit material as a basic structural unit, integrates a group of metal disk microstructures and asymmetric electrode contacts at both ends of a strip metal, and is an infrared to terahertz hyperspectral detector of metal disk microstructure / tellurium nanoribbon / strip metal electrode / Si / SiO2 substrate under room temperature conditions, and has a self-powered, highly sensitive, highly responsive and integrated photoconductive or photovoltaic detection working mode.

[0036] The above-mentioned purpose of the present invention can be achieved through the following technical solutions:

[0037] The ultra-wide spectrum detection device integrates a metal disk microstructure array 4 and a strip metal electrode with its lead electrode 7 on a Si1 / SiO22 substrate. The metal disk microstructure array 4 is connected to the corresponding lead metal electrode 7; there is a tellurium nanoribbon conductive channel 3 with blackbody sensitivity and ultra-wide spectrum response between the second strip metal electrode 6 and the metal disk microstructure array 4. The tellurium nanoribbon conductive channel 3 is connected to the metal disk microstructure 4 and the second strip metal electrode 6 to form a good ohmic contact.

[0038] The thickness of the Si1 / SiO22 substrate is 0.5 mm to 1 mm.

[0039] The metal disk microstructure array 4 is a periodically arranged array of metal disk microstructures 401, and the spacing between each metal disk microstructure 401 is 100 nm to 300 nm.

[0040] The metal disk microstructure 401 is made of Au material, with a disk diameter of 1 μm to 1.5 μm and a thickness of 50 nm to 60 nm.

[0041] The first strip metal electrode 5, the second strip metal electrode 6 and the lead electrode 7 are Cr / Au electrodes with a thickness of 90 nm to 110 nm, including 5 to 15 nm Cr and 85 to 95 nm Au.

[0042] The tellurium nanoribbon conductive channel 3 has a length of 25 μm to 40 μm, a width of 2 μm to 8 μm, and a thickness of 300 nm to 800 nm.

[0043] The present invention provides a microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response, which is manufactured by the following technical scheme.

[0044] 1) First, the surface of the Si / SiO2 substrate was cleaned and cut into samples with a size of 1.5 cm × 1.5 cm by cutting technology;

[0045] 2) preparing alignment marks for UV lithography and alignment marks for electron beam lithography using UV lithography, electron beam evaporation and lift-off processes;

[0046] 3) Using PDMS transfer technology, the tellurium nanoribbons grown by chemical vapor deposition on the substrate are transferred to the cleaned Si / SiO2 substrate with alignment marks to achieve the response of the detector in various bands;

[0047] 4) Use UV lithography, electron beam evaporation and lift-off process to prepare strip metal electrodes to form good ohmic contact;

[0048] 5) By finely controlling the size, shape and arrangement of the microstructures and preparing metal disk microstructures using electron beam, electron beam evaporation and lift-off processes, the interaction between light and detector materials is enhanced, thereby improving the detector's response rate in various bands;

[0049] 6) Prepare 300~400 nm thickened lead electrodes by UV lithography, electron beam evaporation and lift-off process;

[0050] 7) Finally, standard semiconductor packaging technology is used to package and test the device.

[0051] The technical solution of the present invention has the following innovative advantages:

[0052] 1. Taking advantage of the characteristics of narrow bandgap materials such as photoexcited carrier distribution and high thermoelectric figure of merit, combined with the differentiated absorption and photoelectric and photothermal conversion mechanisms of tellurium nanomaterials in the visible-terahertz band, the asymmetric device structure of the metal disk microstructure array is introduced. The local enhancement or local scattering enhancement of the light field of the metal disk microstructure array induces changes in carrier concentration or thermal distribution, and light field distribution, thereby broadening the response band from visible to terahertz and achieving blackbody radiation performance.

[0053] Tellurium material with a narrow band gap and high thermoelectric figure of merit is used as a conductive channel, integrating a group of metal disk microstructure arrays and asymmetric electrode contacts at both ends of a metal strip. Combined with the differentiated absorption and photoelectric and photothermal conversion mechanisms of the material in the visible-terahertz band, the metal disk microstructure array enhancement is introduced to induce changes in carrier concentration, thermal distribution and light field distribution. Through the special device structure, the response range of the band is broadened from visible to terahertz, achieving the detection performance of the device with ultra-wide spectrum blackbody sensitivity at room temperature.

[0054] 2. The wavelength of the terahertz band is long, and reducing the size of the device will lead to a significant diffraction effect. We need to design and prepare a high-performance metal disk structure to improve free-space impedance matching, achieve strong light field coupling and distribution at sub-wavelength sizes, and enhance the device's ultra-wide-spectrum light field localization and integration through microstructure enhancement.

[0055] 3. Utilizing the significant photovoltaic effect at the contact between metal and tellurium materials, combined with the asymmetric contact device consisting of a group of metal microstructure-tellurium material ohmic contacts and strip metal-tellurium ohmic contacts, the mirror symmetry of the built-in potential between metal and semiconductor is broken, so that the image currents of the device cannot cancel each other out under full light irradiation, and a large net photocurrent is generated externally. The asymmetric structure of the device further induces high self-drive, low dark current noise, and high response photoelectric detection capabilities.

[0056] In the present invention, it is possible to improve the performance of photoelectric detection, so that the material selection range of the detector is wider, and it is expected to make new breakthroughs in achieving higher sensitivity, wider spectral response and room temperature operation, and explore new physical mechanisms and material systems to realize the detection of ultra-wide spectral range from infrared to terahertz bands. In the present invention, tellurium-based materials are used with their unique physical structure, significant electrical properties and excellent optical properties to provide an ideal platform for infrared terahertz detection research. In this context, a microstructure-enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response is proposed, and ultra-spectral detection of electromagnetic waves from visible light to terahertz bands is realized under room temperature conditions through precise micro-nano processing technology. The innovation of this detector lies in the optimized design of its microstructure, which combines advanced optical micro-nano structures with high-performance semiconductor materials to ensure high blackbody sensitivity in a wide spectral range. By finely controlling the size, shape and arrangement of the microstructure, the detector can achieve effective detection of wide-band light radiation without cooling, greatly reducing the complexity and cost of the system. The research and development of this room temperature ultra-wide spectrum detector marks an important progress in the field of optoelectronic devices.

[0057] Blackbody radiation detection is an important means to measure the infrared sensitivity of photodetectors. It simulates the thermal radiation characteristics of the target object through an idealized blackbody object. A blackbody can absorb all incident electromagnetic radiation without reflection or transmission, so it can emit the most ideal radiation spectrum, namely the blackbody radiation spectrum. In blackbody radiation detection, a standard blackbody with a known temperature is usually used as a calibration standard. The radiation characteristics of the object to be tested are compared with those of the standard blackbody to evaluate the infrared sensitivity of the object to be tested. Since blackbody radiation detection is based on inherent physical principles, it has high precision and accuracy, and its results can reflect the performance indicators of photodetectors, such as sensitivity, response speed, and noise level. Through blackbody radiation detection, the stability and efficiency of photodetectors in practical applications can be ensured. Therefore, we studied the photodetection performance of photodetectors when the blackbody source temperature changes from 500 K to 1400 K.

[0058] like Figure 1 and Figure 2As shown, a structure diagram of a microstructure enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response of the present invention is provided, wherein the detector integrates a metal disk microstructure array 4, a first strip metal contact electrode 5, a second strip metal contact electrode 6 and a lead electrode 7 on a Si / SiO2 substrate 1 / 2, and the metal disk microstructure array 4 is connected to the corresponding lead electrode 7; a tellurium nanoribbon conductive channel 3 with blackbody sensitivity and ultra-wide spectrum response is transferred between the second strip metal contact electrode 6 and the metal disk microstructure array 4, and the tellurium nanoribbon conductive channel 3 is connected to the metal disk microstructure array 4 and the second strip metal contact electrode 6 to form a good ohmic contact.

[0059] Tellurium material with narrow band gap and high thermoelectric figure of merit is used as the conductive channel; a group of metal disk microstructures and asymmetric electrode contacts at both ends of the metal strip are integrated to achieve strong light field coupling and distribution, combined with the differentiated absorption and multi-photoelectric conversion mechanism of the material in the visible-terahertz band, and the introduction of special device structure to broaden the response range of the band from visible to terahertz, and realize the device's ultra-wide spectrum detection of blackbody sensitivity at room temperature, self-driving, low dark current, and high response photoelectric detection capabilities.

[0060] The specific preparation and testing process of a microstructure enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response of the present invention is as follows:

[0061] Step 1: First, clean the surface of the Si / SiO2 substrate and cut the substrate into samples with a size of 1.5 cm × 1.5 cm by cutting technology;

[0062] Step 2: Prepare UV lithography alignment marks and electron beam lithography alignment marks (Cr / Au) using UV lithography (AZ5214 photoresist), electron beam evaporation and lift-off process;

[0063] Step 3: Using PDMS transfer technology, the tellurium nanoribbons grown by chemical vapor deposition on the substrate are transferred to the cleaned Si / SiO2 substrate with alignment marks to achieve the response of the detector in each band;

[0064] Step 4: Use UV lithography, electron beam evaporation and lift-off process to prepare metal electrodes (Cr / Au) to form good ohmic contacts;

[0065] Step 5: By finely controlling the size, shape and arrangement of the microstructure and using electron beam, electron beam evaporation and lift-off processes to prepare metal disk microstructures (Au), the interaction between light and the detector material is enhanced, thereby improving the detector's response rate in each band.

[0066] Step 6: Prepare 300-400 nm thickened electrodes (Cr / Au) by UV lithography, electron beam evaporation and lift-off process;

[0067] Step 7 Finally, the device is packaged and tested using standard semiconductor packaging technology.

[0068] Step 8: Use a laser in the range of 520nm~4600nm, a 0.020~0.04 THz microwave oscillator, and a Gunn oscillator combined with a frequency multiplier to generate 0.1~0.4 THz continuous wave radiation. The light source is focused onto the detector through an off-axis parabolic mirror. The photocurrent signal generated by the detector is amplified by a semiconductor analyzer and a preamplifier (SR560), and then input into an oscilloscope and a phase-locked amplifier (SR830) respectively. In addition, the reference signal of the chopper frequency of the chopper (SR430) is also required to be input into the oscilloscope and the phase-locked amplifier respectively to ensure the retention of the response waveform of the photodetector and the recording of the responsivity.

[0069] Step 9: Continuously irradiate the device with a blackbody radiation source, use the chopper SR430 to control the blackbody radiation frequency during the period, adjust the blackbody radiation temperature, and obtain the blackbody radiation current waveform at different temperatures.

[0070] The present invention discloses a microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response, which provides an ultra-wide spectrum detector from visible light to terahertz waves, and particularly relates to a detection device with a metal disk microstructure / tellurium nanoribbon / strip metal electrode / Si / SiO2 substrate structure under room temperature conditions and an ultra-wide spectrum response to visible light to terahertz waves, and has a self-powered, highly sensitive, highly responsive and integrated photoconductive or photovoltaic detection working mode. Example 1

[0071] The thickness of Si / SiO2 substrate is 1 mm, when the disk diameter of metal disk microstructure is a=1 μm, the spacing of metal disk microstructure is b=0.2 μm, the length of metal disk microstructure array 4 is c=50 μm, the width is c=50 μm, the thickness of gold electrode is 100 nm, and the conductive channel is 100 μm long. Chemical vapor deposition growth of tellurium nanoribbons. Figure 3 As shown in Figure 2, the tellurium nanoribbons have good electrical properties and form good ohmic contacts, laying the foundation for devices for ultra-wide spectrum photodetection. Figure 4 As shown, tellurium nanoribbons and metal electrodes have a photocurrent response of 1~2 uA in both the visible light band and the near-infrared band. Example 2

[0072] The thickness of Si / SiO2 substrate is 1 mm, when the diameter of metal disk microstructure a=1.2 μm, the spacing of metal disk microstructure b=0.2 μm, the length of metal disk microstructure array 4 c=30 μm, the width c=30 μm, the thickness of gold electrode 100 nm and the length of conductive channel 100 μm are chemically vapor deposited to grow tellurium nanowires. Figure 7 As shown in Figure 1, under the irradiation of near-infrared light, the change of photocurrent is observed in real time, and the photocurrent increases with the increase of incident power. Figure 8 As shown in the figure, the focused light moves along the device channel from the left end of the metal disk microstructure to the strip metal electrode. The photoresponse current is obviously asymmetric, and the photoresponse current in the metal disk microstructure area is about 5 times that of the metal electrode. In summary, the metal disk microstructure can significantly improve the response current of the detector and lay a structural foundation for self-powered high-response detection. Example 3

[0073] The thickness of Si / SiO2 substrate is 1 mm. When the disk diameter of the metal disk microstructure is a=1.2 μm, the spacing of the metal disk microstructure is a=0.2 μm, the length of the metal disk microstructure array is c=50 μm, the width is c=50 μm, the thickness of the gold electrode is 100 nm, and the conductive channel is 100 μm long. Chemical vapor deposition grows tellurium nanowires. Under zero bias voltage and terahertz irradiation, the device generates photocurrent, similar to photovoltaic devices, with a high signal-to-noise ratio, such as Figure 4 As shown in Figure 2, an ultra-wide spectrum response from the visible light band to the terahertz band is achieved; Figure 5 As shown in Figure 1, the spectrum is scanned from microwave to terahertz band to obtain the curve of photocurrent changing with terahertz frequency. Fig. 9 As shown in Figure 2, in the 0.09 THz band, the device response speed reaches 60 ~ 70 μs. In addition, the detector also has a blackbody response, such as Fig.10 As shown in the figure, the blackbody response current of the detector reaches up to 80nA at 500 ~ 1400 K.

[0074] The present invention discloses a microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response. Various parameters in the detector structure vary within a certain range. The microstructure-enhanced detector of the present invention has the performance of ultra-wide spectrum and blackbody sensitive response at room temperature. The test results show that the photocurrent of the tellurium nanoribbon under the enhancement of the metal disk microstructure is preliminarily increased by about 5 times under local light irradiation, and the light response of the device is about to be increased by 16 times under global light irradiation; the response band spans from visible light to near-infrared and then to the terahertz band, and the device has multiple detection modes such as photoconductivity or photovoltaics; the design of tellurium nanoribbon combined with metal microstructure uses a multi-detection mechanism to achieve high-sensitivity ultra-wide spectrum detection, which provides a direction for the design of ultra-wide spectrum detection devices.

[0075] The above-mentioned specific implementation methods are used to explain the present invention and are only preferred embodiments of the present invention, rather than limiting the present invention. Any modifications, equivalent substitutions, improvements, etc. made to the present invention within the spirit of the present invention and the protection scope of the claims shall fall within the protection scope of the present invention.

Claims

1. A microstructure-enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response, characterized in that: The invention comprises integrating a metal disk microstructure array, a strip metal electrode and a lead electrode on a Si / SiO2 substrate, wherein two sides of the metal disk microstructure array are in asymmetric electrode contact, one side is connected to a first strip metal electrode through a lead electrode, and the opposite side is connected to a second strip metal electrode through a tellurium nanoribbon conductive channel with blackbody sensitivity and ultra-wide spectrum response, so as to form a good ohmic contact; Tellurium materials with narrow band gap and high thermoelectric figure of merit are used as conductive channels. Combined with the differentiated absorption and photoelectric and photothermal conversion mechanisms of tellurium nanomaterials in the visible-terahertz band, an asymmetric device structure of a metal disk microstructure array is introduced. The local enhancement or local scattering enhancement of the light field of the metal disk microstructure array induces changes in carrier concentration or thermal distribution, and light field distribution, broadening the response range of the band from visible to terahertz, and realizing ultra-wide spectrum detection, self-driven, low dark current, and high-response photoelectric detection with blackbody sensitivity at room temperature.

2. The microstructure-enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response according to claim 1, characterized in that: The metal disk microstructure array is an array of periodically arranged metal disk microstructures, and the spacing between each metal disk microstructure is 100 nm to 300 nm; The metal disk microstructure is made of Au material, with a disk diameter of 1μm ~1.5μm and a thickness of 50 nm ~60 nm.

3. The microstructure enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response according to claim 1, characterized in that: The first strip-shaped metal electrode, the second strip-shaped metal electrode and the lead electrode are Cr / Au metal composite electrodes with a thickness of 90 nm to 110 nm, wherein the thickness of the Cr layer is 5 nm to 15 nm and the thickness of the Au layer is 85 nm to 95 nm.

4. The microstructure enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response according to claim 1, characterized in that: The tellurium nanoribbon conductive channel has a length of 25 μm to 40 μm, a width of 2 μm to 8 μm, and a thickness of 300 nm to 800 nm.

5. The microstructure enhanced room temperature ultra-wide spectrum detector with blackbody sensitive response according to claim 1, characterized in that: The thickness of the Si / SiO2 substrate is 0.5 mm to 1 mm.

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