Chip bonding residual stress measuring structure and method based on pressure measuring film

Abstract

The invention discloses a chip bonding residual stress measurement structure and method based on a pressure measurement film, and relates to the technical field of packaging. A pressure measuring film is arranged above the bonding stress amplification structure, and a transparent glass pressing block is arranged on the pressure measuring film; the bonding stress amplification structure comprises a glass substrate, a silicon chip is bonded on the glass substrate through a bonding agent, and a heat insulation film is arranged between the silicon chip and the pressure measurement film. The method can be widely applied to visual consideration and evaluation of distribution conditions and quantitative data of the bonding residual stress of various adhesives in different bonding interfaces, and can effectively guide selection of the adhesives and coating patterns in the packaging process of bonding residual stress sensitive integrated circuit products; the method has guiding significance for early-stage packaging process development of residual stress sensitive integrated circuit products.

Description

Technical Field

[0001] The present invention relates to the field of packaging technology, in particular to a chip bonding process in an integrated circuit packaging process, and more particularly to a measurement structure and method for chip bonding residual stress based on a pressure measurement film. Background Art

[0002] Residual stress is one of the most common causes of electrical performance degradation in stress-sensitive devices such as MEMS devices and reference voltage source devices. It usually refers to the stress that remains in the device after the external force or uneven temperature field is eliminated. This stress will eventually be transmitted to the chip along the packaging structure, causing abnormal deformation of the chip and leading to failure of the microstructure in the chip, such as adhesion, fracture, delamination, etc., which ultimately affects the stability and accuracy of the electrical signal.

[0003] At present, the residual stress measurement methods commonly used in the field of microelectronics mainly include differential capacitance measurement, X-ray diffraction (XRD), on-wafer structure measurement and Raman spectroscopy. Among them, differential capacitance measurement converts the deformation of electronic devices into changes in capacitance parameters, thereby performing indirect measurement.

[0004] The on-wafer structural measurement method refers to a method of amplifying the deformation of the microstructure by using a complex stress amplification structure, and then performing micro-scale measurements through SEM or optical microscope equipment. Both of the above methods require the redesign and manufacture of relatively complex microstructures at the chip scale, so the manufacturing and design costs and cycles are high, and the measurement precision and accuracy of the final residual stress are greatly restricted by the manufacturing precision, that is, redesigning a complex chip-level structure itself will introduce some new systematic errors into the measurement system.

[0005] Raman spectroscopy and X-ray diffraction require high-end precision testing instruments for characterization and measurement. For the measurement of bonding residual stress involved in daily production, although this non-destructive test method has high measurement accuracy, its test time is long, which is not conducive to timely solving the residual stress problems encountered in the production process, and these two methods cannot obtain information on the distribution of bonding residual stress on the chip. In addition, such high-precision precision testing instruments usually have high testing costs and are not easy to be used for mass production circuits.

[0006] Usually, in the characterization method of bonding residual stress in the field of microelectronics, it is necessary to use a stress amplification structure to amplify the residual stress to be measured in proportion in order to increase the detectability and detection accuracy of the residual stress. Therefore, it is urgent to develop a measurement structure and method that can simplify the residual stress test process, reduce sample preparation and testing costs, shorten the test cycle, and enhance the visualization of residual stress detection. Summary of the invention

[0007] The purpose of the present invention is to provide a measurement structure and method for chip bonding residual stress based on pressure measurement film, so as to overcome the constraints on the characterization of bonding residual stress in conventional integrated circuits in the prior art, such as small chip size, long test cycle and high cost, small residual stress magnitude, and the inability to visualize the distribution of bonding residual stress.

[0008] In order to achieve the above object, the present invention provides the following technical solutions: On the one hand, the present invention provides a measurement structure of chip bonding residual stress based on a pressure measuring film, including a bonding stress amplification structure; a pressure measuring film is arranged above the bonding stress amplification structure, and a transparent glass pressing block is arranged on the pressure measuring film; the bonding stress amplification structure includes a glass substrate, a silicon chip is attached to the glass substrate by an adhesive, and a thermal insulation film is arranged between the silicon chip and the pressure measuring film; the sandwich structure mainly utilizes the transparent glass pressing block on the top and the bonding stress amplification structure on the bottom to provide compressive stress acting on both sides of the pressure measuring film, and the thermal insulation film is mainly used to effectively block the transfer of heat, which can effectively reduce the thermal stress to which the film is subjected during the curing process of the adhesive, thereby effectively improving the accuracy of film measurement and the applicable range for different adhesive curing temperature curves.

[0009] Furthermore, the silicon chip is proportionally enlarged to the size of a conventional chip, and the size of the silicon chip is smaller than the size of the thermal insulation film, and the size of the thermal insulation film is smaller than the size of the pressure measurement film; by proportionally enlarging the size of the conventional chip, the bonding residual stress is enlarged, which effectively solves the problem that conventional chips are difficult to adapt to the pressure measurement film due to their small size, small residual stress, and small chip warping caused by residual stress. According to the bottom heat transfer mode, the thermal insulation film size must be larger than the silicon chip to ensure that most of the heat will be lost in the thermal insulation film. The purpose of the pressure measurement film size being larger than the thermal insulation film is to allow the bonding residual stress of the silicon chip to be transferred step by step to the pressure measurement film and fully reflect the stress state on the silicon chip.

[0010] Furthermore, in order to transfer the bonding residual stress to the chip as much as possible through the stress transfer in the structure, thereby forming a corresponding pressure on the pressure measurement film, the silicon chip is subjected to a thinning process, and the thickness of the silicon chip is 1 / 5 to 1 / 6 of the thickness of a conventional silicon chip of 300-400 microns; that is, the relatively rigid conventional silicon chip can be effectively made to exhibit stronger toughness, which is more conducive to the silicon chip being subjected to the lateral shrinkage compressive stress of the adhesive, and the bonding residual stress at the corners of the silicon chip is reflected as a vertical silicon plane upward.

[0011] Furthermore, the adhesive is any one of epoxy resin adhesive, acrylic adhesive and silicone adhesive, or a combination of at least two thereof; Furthermore, because the pressure measuring film reflects the pressure value, the transparent glass block is 2g and is placed directly on the pressure measuring film; On the other hand, the present invention also provides a method for measuring chip bonding residual stress based on a pressure measurement film, which specifically includes the following steps: S1, prefabrication of bonding stress amplification structure: after thinning the thickness of the silicon chip, the silicon chip is bonded to the glass substrate through an adhesive, and the thickness of the glue between the silicon chip and the glass substrate is increased; S2, measurement structure assembly: placing a heat-insulating film on the silicon chip, placing a pressure measuring film on the heat-insulating film, and placing a transparent glass pressing block on the pressure measuring film; S3, after the measurement structure is assembled, let it stand for ten minutes, and after observing the pressure measurement film under a microscope to see that there is no color change, place the measurement structure on a high-temperature heating stage for a curing process; S4, after the adhesive is cured, the measuring structure is placed under a microscope to read the color change on the pressure measuring film, and compared with the colorimetric card adapted for the pressure measuring film to obtain the bonding residual stress value.

[0012] Furthermore, the thickness of the bonding layer can be increased by appropriately increasing the dispensing height, slowing down the marking speed, and reducing the pressure under the nozzle.

[0013] Furthermore, according to the maximum bonding residual stress value, a pressure measuring film within a corresponding stress test range is selected.

[0014] Furthermore, the maximum bonding residual stress value is determined according to the following formula: S max : ; in, α sub is the thermal expansion coefficient of the substrate; α Si is the thermal expansion coefficient of the silicon chip; E a is the modulus of the adhesive; E sub is the modulus of the substrate; L is the chip length; x is the thickness of the bonding layer; T 0 is the curing temperature; Tis the actual use temperature. As can be seen from the formula, the thermal expansion coefficient of the substrate and silicon chip, the modulus of the adhesive and the substrate are all inherent properties of the material and cannot be easily changed, while the length of the chip L and the thickness of the adhesive layer x can be adjusted through process technology. The larger the size of the silicon chip, the thicker the adhesive layer, and the corresponding adhesive residual stress ( S max ) is also larger.

[0015] Compared with the prior art, the present invention has the following beneficial technical effects: The present invention provides a measurement structure for chip bonding residual stress based on a pressure measurement film, based on the conventional chip bonding process of monolithic integrated circuit products, and provides a bonding stress amplification structure, which realizes proportional amplification of bonding residual stress from three dimensions of chip size, thickness and adhesive thickness, and the structure is also compatible with the use of subsequent pressure measurement films. Compared with chips of traditional size and thickness, the present invention realizes proportional amplification of stress, so that the residual stress value to be measured meets the range and measurement accuracy of the pressure measurement film. The structure can also simultaneously complete the visual and simple measurement of the size and distribution of bonding residual stress. In addition, the materials involved in the structure are available and have practical manufacturability.

[0016] The present invention also provides a method for measuring chip bonding residual stress based on pressure measurement film. Through this non-destructive, simple and visual testing method based on pressure measurement film, the distribution of bonding residual stress can be directly observed from the top of the structure through an optical microscope, and the value of residual stress can be read out by comparing the colorimetric card. This simple measurement method can be widely applied to various types of chip adhesives, and can also be applied to the evaluation of the adhesive curing temperature curve at the bonding residual stress angle. The present invention effectively solves the problems of high cost, long cycle and inability to measure stress distribution in chip bonding residual stress measurement, and effectively solves the problem that conventional chips are difficult to adapt to pressure measurement films due to their small size, small residual stress, and small degree of chip warping caused by residual stress.

[0017] Specifically, the present invention can be widely used for visual consideration and evaluation of the distribution of bonding residual stress of various adhesives in different bonding interfaces and quantitative data, and can effectively guide the selection of adhesives and coating patterns in the packaging process of integrated circuit products sensitive to bonding residual stress, and has guiding significance for the early packaging process development of integrated circuit products sensitive to residual stress (such as reference voltage source devices, high-precision MEMS devices, etc.). It is also helpful to evaluate the process technology capabilities of electronic packaging processes from the perspective of residual stress, and guide the improvement and optimization of technology. It can also provide important theoretical support for a deep understanding of bonding mechanisms and circuit failure mechanisms. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 The figure is an overall schematic diagram of a chip bonding residual stress measurement structure based on a pressure measurement film in an embodiment of the present invention.

[0019] Figure 2 Schematic diagram of the residual stress measurement structure test principle in an embodiment of the present invention.

[0020] Figure 3 Schematic diagram of the use of the pressure measurement film in the embodiment of the present invention.

[0021] In the figure, 1. glass substrate; 2. pressure measuring film; 3. transparent glass block; 4. silicon chip; 5. thermal insulation film. DETAILED DESCRIPTION

[0022] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0023] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0024] Example 1 See also Figure 1The present invention provides a chip bonding residual stress measurement structure based on a pressure measurement film, which mainly includes a bonding stress amplification structure, a pressure measurement film 2 and a transparent glass pressing block 3. The three modules are stacked vertically. A pressure measurement film 2 is arranged above the bonding stress amplification structure, and a transparent glass pressing block 3 is arranged on the pressure measurement film 2; the bonding stress amplification structure includes a glass substrate 1, a silicon chip 4 is attached to the glass substrate 1 by an adhesive, and a heat insulation film 5 is arranged between the silicon chip 4 and the pressure measurement film 2. The silicon chip 4 proportionally enlarges the size of a conventional chip to achieve the amplification of the bonding residual stress, and the size of the silicon chip 4 is smaller than the size of the heat insulation film 5, and the size of the heat insulation film 5 is smaller than the size of the pressure measurement film 2; according to the bottom heat transfer mode, the size of the heat insulation film 5 must be larger than the silicon chip 4 to ensure that most of the heat will be lost in the heat insulation film. The role of the size of the pressure measurement film 2 being larger than the heat insulation film 5 is to allow the bonding residual stress of the silicon chip 4 to be transferred to the pressure measurement film 2 step by step, and fully reflect the stress state on the silicon chip 4. Because the pressure measuring film 2 reflects the pressure value, a transparent glass pressing block 3 weighing only 2g is selected and placed directly on the pressure measuring film 2. The adhesive is any one of epoxy resin adhesive, acrylic adhesive and silicone adhesive or a combination of at least two thereof.

[0025] The bonding stress amplification structure is a visual structure, which has the effect of amplifying the bonding residual stress, that is, compared with the chips of traditional size and thickness, it realizes the proportional amplification of stress, so that the residual stress value to be measured meets the range and measurement accuracy of the pressure measurement film 2, and can also complete the visual simple measurement of the bonding residual stress size and distribution. In addition, the materials involved in the structure are available and have practical manufacturability.

[0026] The design principle of the bonding stress amplification structure is mainly to use the sandwich structure of the transparent glass block 3 at the top and the bonding stress amplification structure at the bottom to provide compressive stress on both sides of the pressure measuring film 2. The transparent glass block 3 at the top has the following two functions: (1) to provide a pressure environment perpendicular to the surface for the pressure measuring film 2 through its own gravity; (2) because the pressure measuring film 2 will respond to the maximum pressure value it is subjected to in real time through color changes, transparent glass is selected as the top pressure block, which is more convenient to observe the real-time change of the color of the pressure measuring film 2 during the bonding and curing process. The bonding stress amplification structure utilizes the characteristic that the pressure measuring film will change color when it is subjected to extrusion force, and provides vertical downward pressure through the gravity of the top glass block 3, and the bonding residual stress will generate vertical upward stress at the corners of the silicon chip 4, thereby causing the silicon chip 4 to warp, and because the downward pressure value is much smaller than the bonding residual stress value, the pressure value reflected on the pressure measuring film 2 is the bonding residual stress value.

[0027] The thickness of the silicon chip 4 is very important. If the silicon chip 4 is too thick, the bonding stress will cause the silicon chip 4 to warp, which will cause the color change on the stress measurement film 2. Within the capacity range, the silicon chip 4 is thinned to the thinnest. The thickness of the silicon chip 4 is 1 / 5 to 1 / 6 of the thickness of the conventional silicon chip of 300-400 microns, which can effectively make the relatively rigid conventional silicon chip show stronger toughness, so that it is more conducive to the silicon chip 4 to be subjected to the lateral contraction pressure stress of the pressure measurement film 2, and the corners of the silicon chip 4 are reflected as the bonding residual stress perpendicular to the plane of the silicon chip 4.

[0028] The pressure measuring film 2 adopts a single-piece pressure measuring film. As a commonly used film on the market for simply measuring pressure and pressure distribution, the pressure measuring film 2 is widely used in engineering, machinery and other fields due to its advantages of simple measurement method, low price and high precision. When the pressure measuring film is subjected to pressure within a size range, the pressure distribution and the maximum pressure value within the area at that moment can be read by visually identifying the color change of the film. The pressure measuring films currently on the market are mainly divided into two types: double-piece and single-piece. The two mainly differ in the measurement method and pressure measurement range. The pressure measurement range of the double-piece type is ultra-micro pressure (5LW) 0.006MPa~medium pressure (MW) 50MPa, and when measuring pressure, the upper and lower films need to be attached together before the color is displayed after being subjected to pressure. The pressure measurement range of the single-piece type is: medium pressure (MS) 10MPa~50 MPa, high pressure (HS): 50MPa~130 MPa, and ultra-high pressure (HHW) 130MPa~300 MPa, and it only needs a single piece to complete the measurement when measuring pressure. Therefore, before selecting a pressure measurement film, it is necessary to first consult relevant literature data in combination with the mathematical relationship of the stress amplification structure, and use simulation to estimate the actual residual stress value range to be measured. Finally, according to the estimated bonding residual stress range, guide the selection of pressure measurement film.

[0029] In addition, the main manufacturer of pressure-sensitive paper on the market is Fuji Corporation of Japan. Among its pressure measuring film categories, only one product can be used for pressure measurement at high temperatures, but its pressure measurement range is in the ultra-low pressure area (0.5~2.5MPa). In order to keep consistent with the bonding conditions of the actual chip, the measurement of bonding residual stress in the present invention needs to be measured under high temperature environment. Therefore, conventional pressure measuring films will be affected by high temperature, resulting in abnormal color changes and reduced accuracy of measurement results. It is then learned that there is a soft film material on the market that can be specifically used for heat insulation - thermal insulation film 5, whose main component is polyamide, with low thermal conductivity (0.25W·m -1 ·k -1 ), so it can effectively block the transfer of heat to a certain extent. Based on the characteristics of this material, placing it between the stress amplification structure and the pressure measurement film 2 can effectively reduce the thermal stress of the pressure measurement film 2 during the adhesive curing process, thereby effectively improving the accuracy of the pressure measurement film 2 and the applicable range of different adhesive curing temperature curves.

[0030] Example 2 See also Figure 2 , a schematic diagram of the residual stress measurement structure test principle in an embodiment of the present invention, because the pressure measuring film 2 reflects the pressure value, the pressure when the transparent glass pressing block 3 acts on the pressure measuring film 2 P0 As shown in formula 2: (2) On this basis, after the adhesive is cured, the four corners of the silicon chip 4 will generate residual stress perpendicular to the plane of the silicon chip 4. P t However, structural simulation and reference data show that the bonding residual stress is usually about 10 1 ~10 2 MPa level. Compared with the magnitude of the bonding residual stress, the vertical downward pressure value provided by the transparent glass block 3 can be ignored. At this time, the total pressure on the pressure measurement film 2 is the bonding residual stress value in the vertical plane upward, that is, the bonding residual stress value = P t - P 0≈ P t , that is, the pressure value read by the color of the pressure measuring film 2 is the bonding residual stress value.

[0031] The method for measuring chip bonding residual stress based on pressure measurement film specifically comprises the following steps: S1, prefabrication of bonding stress amplification structure: After the thickness of the silicon chip 4 with a size of 25×25 mm is thinned to 1 / 5~1 / 6 of the thickness of a conventional chip by a fully automatic thinning and scribing mechanism, the silicon chip 4 is then attached to the glass substrate 1 by an automatic chip bonding machine through an adhesive, and the thickness of the glue between the silicon chip 4 and the glass substrate 1 is increased. Specifically, the glue thickness can be effectively increased by appropriately increasing the glue height, slowing down the scribing speed and reducing the pressure under the suction nozzle; S2, measurement structure assembly: First, according to the structural simulation results of bonding residual stress and the maximum bonding residual stress value calculated by formula (1), determine to purchase a single-piece pressure measurement film within the corresponding stress test range. The size of the silicon chip 4 is 25×25 mm, and the pressure measurement film 2 is cut into a size of 29×29 mm; the thermal insulation film 5 is cut into a size of 28×28 mm, and the thermal insulation film 5 is placed on the silicon chip 4, and the pressure measurement film 2 is placed on the thermal insulation film 5. The transparent glass pressing block 3 is placed on the pressure measurement film 2. S3, after the measuring structure is assembled, let it stand for ten minutes, and after observing the pressure measuring film 2 under a microscope for no discoloration, the measuring structure is placed on a high-temperature heating stage for a curing process; different from the oven curing used in the conventional bonding process, the reason for choosing a heating stage is mainly to consider that under the premise of ensuring the normal heat curing of the adhesive, the bottom heating method is more conducive to blocking the bottom heat from being transferred to the pressure measuring film 2 through the thermal insulation film 5, thereby blocking the influence of temperature on the accuracy of the measurement results to the greatest extent.

[0032] S4, after the adhesive is cured, the measuring structure is placed under a microscope to read the color change on the pressure measuring film 2, and compared with the colorimetric card adapted for the pressure measuring film 2 to obtain the bonding residual stress value.

[0033] The formula (1) is ;in, α sub is the thermal expansion coefficient of the substrate; α Si is the thermal expansion coefficient of the silicon chip; E a is the modulus of the adhesive; E sub is the modulus of the substrate; L is the chip length; x is the thickness of the bonding layer; T 0 is the curing temperature; T is the actual use temperature. As can be seen from the formula, the thermal expansion coefficient of the substrate and silicon chip, the modulus of the adhesive and the substrate are all inherent properties of the material and cannot be easily changed, while the length of the chip L and the thickness of the adhesive layer x can be adjusted through process technology. The larger the size of the silicon chip, the thicker the adhesive layer, and the corresponding adhesive residual stress ( S max ) is also larger.

[0034] See also Figure 3 , is a schematic diagram for explaining the use of the pressure measuring film in the embodiment of the present invention. First, according to the temperature and humidity of the use environment of the pressure measuring film 2, the type of color-temperature curve applicable to the environment (for example, curve A) is determined, and then the color change of the pressure measuring film 2 is compared with the color card, and the value above the color is read, and then the pressure value of the horizontal axis corresponding to the color-temperature A curve is read, which is the bonding residual stress value.

[0035] The purpose of the present invention is to make up for the deficiency of simple characterization methods for chip adhesive residual stress in the field of microelectronics, and propose a chip-size-level visualized residual stress characterization method with bonding residual stress amplification effect and pressure measurement film, thereby avoiding the constraints on bonding residual stress characterization caused by factors such as small chip size, long test cycle and high cost, and small residual stress magnitude in conventional integrated circuits, and solving the problem that the distribution of bonding residual stress cannot be visualized in the past. Moreover, this systematic visualized bonding residual stress characterization method can be applied to the visualized characterization of residual stress size and distribution of various online adhesive products, thus supplementing the assessment method for evaluating the adhesive curing temperature curve from the perspective of residual stress and the visualized analysis means for the actual distribution of bonding residual stress in the chip manufacturing process.

[0036] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It is obvious to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and the present invention can be implemented in other specific forms without departing from the spirit or basic features of the present invention. Therefore, no matter from which point of view, the embodiments should be regarded as exemplary and non-restrictive. The scope of the present invention is defined by the attached claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims are included in the present invention. Any figure mark in the claims should not be regarded as limiting the claims involved.

[0037] In addition, it should be understood that although this specification is described in accordance with the implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation modes that can be understood by those skilled in the art. The above content is only to illustrate the technical idea of ​​the present invention, and cannot be used to limit the protection scope of the present invention. Any changes made on the basis of the technical solution according to the technical idea proposed by the present invention shall fall within the protection scope of the claims of the present invention.

Claims

1. A measurement structure for chip bonding residual stress based on a pressure measurement film, characterized in that: The invention comprises a bonding stress amplification structure; a pressure measuring film (2) is arranged above the bonding stress amplification structure, and a transparent glass pressing block (3) is arranged on the pressure measuring film (2); the bonding stress amplification structure comprises a glass substrate (1), a silicon chip (4) is adhered to the glass substrate (1) by means of an adhesive, and a heat insulation film (5) is arranged between the silicon chip (4) and the pressure measuring film (2).

2. The chip bonding residual stress measurement structure based on the pressure measurement film according to claim 1, characterized in that: The silicon chip (4) is a size that is proportionally enlarged from a conventional chip, and the size of the silicon chip (4) is smaller than the size of the thermal insulation film (5), and the size of the thermal insulation film (5) is smaller than the size of the pressure measurement film (2).

3. The chip bonding residual stress measurement structure based on the pressure measurement film according to claim 1, characterized in that: The thickness of the silicon chip (4) is 1 / 5 to 1 / 6 of the thickness of a conventional silicon chip, which is 300 to 400 microns.

4. The chip bonding residual stress measurement structure based on the pressure measurement film according to claim 1, characterized in that: The adhesive is any one of an epoxy resin adhesive, an acrylic adhesive and a silicone adhesive, or a combination of at least two of them.

5. The chip bonding residual stress measurement structure based on the pressure measurement film according to claim 1, characterized in that: The transparent glass block (3) weighs 2 g.

6. The chip bonding residual stress measurement structure based on the pressure measurement film according to claim 1, characterized in that: The pressure measuring film (2) is a single-piece pressure measuring film.

7. The method for measuring chip bonding residual stress based on a pressure measurement film according to any one of claims 1 to 6, characterized in that: The following steps are involved: S1, prefabrication of the bonding stress amplification structure: after the thickness of the silicon chip (4) is thinned, the silicon chip (4) is bonded to the glass substrate (1) by means of an adhesive, and the thickness of the adhesive between the silicon chip (4) and the glass substrate (1) is increased; S2, assembling the measuring structure: placing a heat-insulating film (5) on the silicon chip (4), placing a pressure measuring film (2) on the heat-insulating film (5), and placing a transparent glass pressing block (3) on the pressure measuring film (2); S3, after the measuring structure is assembled, it is left to stand for ten minutes, and after the pressure measuring film (2) is observed under a microscope and no color change occurs, the measuring structure is placed on a high temperature heating stage for a curing process; S4, after the adhesive is cured, the measuring structure is placed under a microscope to read the color change on the pressure measuring film (2), and compared with a colorimetric card adapted for the pressure measuring film (2) to obtain the bonding residual stress value.

8. The method for measuring chip bonding residual stress based on pressure measurement film according to claim 7, characterized in that: The thickness of the bonding layer can be increased by appropriately increasing the dispensing height, slowing down the marking speed and reducing the pressure under the nozzle.

9. The method for measuring chip bonding residual stress based on pressure measurement film according to claim 7, characterized in that: According to the maximum bonding residual stress value, select the pressure measurement film (2) within the corresponding stress test range.

10. The method for measuring chip bonding residual stress based on pressure measurement film according to claim 9, characterized in that: Determine the maximum bonding residual stress value according to the following formula S max : （1）； in, α sub is the thermal expansion coefficient of the substrate; α Si is the thermal expansion coefficient of the silicon chip; E a is the modulus of the adhesive; E sub is the modulus of the substrate; L is the chip length; x is the thickness of the bonding layer; T 0 is the curing temperature; T is the actual operating temperature.

Images