Sensor device

Abstract

A sensor device is disclosed. The sensor device includes: a sensing area; a first sensor electrode and a second sensor electrode, a capacitor being formed at an intersection of the first sensor electrode and the second sensor electrode, and the sensor driver sensing each of the sensing regions once in a time-division manner during the first sensing frame period, sensing each of the sensing regions once in a time-division manner during the second sensing frame period, and sensing each of the sensing regions once in a time-division manner during the second sensing frame period. And setting an initial sensing region to be sensed during an initial second sensing period of the second sensing frame period to be different from a last sensing region to be sensed during a last first sensing period of the first sensing frame period.

Description

[0001] This application claims priority to and all benefits derived from Korean Patent Application No. 10-2023-0098515, filed on Jul. 27, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to a sensor device and a method for driving the sensor device. Background Art

[0003] With the development of information technology, the importance of display devices as a connection medium between users and information has come to the fore, and the use of display devices such as liquid crystal display devices and organic light emitting display devices is increasing.

[0004] The display device may include a sensor device that senses a user's touch corresponding to an image of the display device and uses the touch as an input signal. A driving signal supplied to a sensor of the sensor device may act on the display device as noise, thereby reducing display quality. Conversely, a signal for displaying an image of the display device may act on the sensor device as noise, thereby reducing sensing sensitivity.

[0005] In order to avoid electromagnetic interference (EMI), a method of changing the frequency band of the driving signal of the sensor device has been proposed, but since various frequency bands have been used, it is difficult to find an additional suitable frequency band. In order to avoid EMI, a method of reducing the amplitude of the driving signal of the sensor device has also been proposed, but there is a problem of reduced signal-to-noise ratio (SNR). Summary of the invention

[0006] The technical problem to be solved is to provide a sensor device and a method of driving the same that can reduce noise without changing the amplitude and frequency band of a driving signal.

[0007] According to one aspect of the present disclosure, a sensor device includes: a sensor unit including a plurality of first sensor electrodes and a plurality of second sensor electrodes, wherein the plurality of first sensor electrodes and the plurality of second sensor electrodes are configured to form a plurality of capacitors at a plurality of intersections of the plurality of first sensor electrodes and the plurality of second sensor electrodes; and a sensor driver configured to send a plurality of drive signals to the plurality of first sensor electrodes and receive a plurality of sensing signals from the plurality of second sensor electrodes. The sensor unit includes a plurality of sensing regions. The number of the plurality of sensing regions is NA, which is an integer greater than 2. The sensor driver: time-divisionally senses each of the plurality of sensing regions once during a first sensing frame period, wherein the first sensing frame period includes a plurality of first sensing periods, and the number of the plurality of first sensing periods is equal to the number of the plurality of sensing regions; time-divisionally senses each of the plurality of sensing regions once during a second sensing frame period including a plurality of second sensing periods, wherein the number of the plurality of second sensing periods is equal to the number of the plurality of sensing regions; and sets an initial sensing region to be sensed during an initial second sensing period of the second sensing frame period among the plurality of sensing regions to be different from a final sensing region to be sensed during a final first sensing period of the first sensing frame period among the plurality of sensing regions.

[0008] An order in which each of the plurality of sensing areas is randomly sensed during the first sensing frame period may be different from an order in which each of the plurality of sensing areas is randomly sensed during the second sensing frame period.

[0009] The plurality of first sensor electrodes are grouped into a plurality of sensing regions, and the plurality of sensing regions each have the same number of first sensor electrodes.

[0010] The plurality of sensing regions share the plurality of second sensor electrodes.

[0011] The sensor driver selects and senses one sensing area among the plurality of sensing areas with a probability of (1 / NA) during an initial first sensing period among the plurality of first sensing periods of a first sensing frame period.

[0012] The sensor driver selects and senses one sensing area among the plurality of sensing areas during a next first sensing period immediately after the initial first sensing period among the plurality of first sensing periods of the first sensing frame period with a probability of 1 / (NA-1). The (NA-1) other sensing areas do not include one sensing area sensed during the initial first sensing period of the first sensing frame period among the plurality of sensing areas.

[0013] The sensor driver selects and senses one sensing area among (NA-2) other sensing areas among the plurality of sensing areas during a third first sensing period immediately after the next first sensing period among the plurality of first sensing periods of the first sensing frame period with a probability of 1 / (NA-2). The (NA-2) other sensing areas do not include one sensing area sensed during an initial first sensing period of the first sensing frame period among the plurality of sensing areas and one sensing area sensed during a next first sensing period of the first sensing frame period among the (NA-1) other sensing areas.

[0014] The sensor driver selects and senses an initial sensing area among the first (NA-1) sensing areas during an initial second sensing period of the second sensing frame period with a probability of 1 / (NA-1). The first (NA-1) sensing areas do not include a last sensing area sensed during a last first sensing period of the first sensing frame period.

[0015] The sensor driver selects and senses one of the second (NA-1) sensing areas with a probability of 1 / (NA-1) during a next second sensing period immediately after the initial second sensing period of the second sensing frame period. The second (NA-1) sensing area includes the last sensing area and does not include the initial sensing area of ​​the first (NA-1) sensing area.

[0016] The sensor driver selects and senses one of the (NA-2) sensing areas with a probability of 1 / (NA-2) during a third second sensing period immediately after the next second sensing period of the second sensing frame period. The (NA-2) sensing areas do not include the initial sensing area and one of the second (NA-1) sensing areas.

[0017] According to an aspect of the present disclosure, there is provided a method for driving a sensor device including a sensor unit, the sensor unit including a plurality of first sensor electrodes and a plurality of second sensor electrodes, wherein the plurality of first sensor electrodes and the plurality of second sensor electrodes are configured to form a plurality of capacitors at a plurality of intersections of the plurality of first sensor electrodes and the plurality of second sensor electrodes, and including a plurality of sensing regions, the number of the plurality of sensing regions being NA (NA being an integer greater than 2), the method comprising the following steps: time-divisionally sensing each of the plurality of sensing regions once during a first sensing frame period, wherein the first sensing frame period includes a plurality of first sensing periods, and the number of the plurality of first sensing periods is equal to the number of the plurality of sensing regions; time-divisionally sensing each of the plurality of sensing regions once during a second sensing frame period including a plurality of second sensing periods, wherein the number of the plurality of second sensing periods is equal to the number of the plurality of sensing regions. An initial sensing region among the plurality of sensing regions to be sensed during an initial second sensing period of the second sensing frame period is different from a final sensing region among the plurality of sensing regions to be sensed during a final first sensing period of the first sensing frame period.

[0018] An order in which each of the plurality of sensing areas is randomly sensed during the first sensing frame period is different from an order in which each of the plurality of sensing areas is randomly sensed during the second sensing frame period.

[0019] The plurality of first sensor electrodes are grouped into a plurality of sensing regions, and the plurality of sensing regions each have the same number of first sensor electrodes.

[0020] The plurality of sensing regions share the plurality of second sensor electrodes.

[0021] During an initial first sensing period among a plurality of first sensing periods of a first sensing frame period, one sensing area among a plurality of sensing areas is selected and sensed with a probability of (1 / NA).

[0022] During a next first sensing period immediately after the initial first sensing period among the plurality of first sensing periods of the first sensing frame period, one sensing area among the plurality of sensing areas is selected and sensed with a probability of 1 / (NA-1). The (NA-1) other sensing areas do not include one sensing area sensed during the initial first sensing period of the first sensing frame period among the plurality of sensing areas.

[0023] During a third first sensing period immediately after the next first sensing period among the plurality of first sensing periods of the first sensing frame period, one sensing area among the (NA-2) other sensing areas among the plurality of sensing areas is selected and sensed with a probability of 1 / (NA-2). The (NA-2) other sensing areas do not include one sensing area sensed during an initial first sensing period of the first sensing frame period among the plurality of sensing areas and one sensing area sensed during a next first sensing period of the first sensing frame period among the (NA-1) other sensing areas.

[0024] During an initial second sensing period of a second sensing frame period, an initial sensing area among the first (NA-1) sensing areas is selected and sensed with a probability of 1 / (NA-1). The first (NA-1) sensing areas do not include a last sensing area sensed during a last first sensing period of a first sensing frame period.

[0025] During a next second sensing period of the second sensing frame period immediately after the initial second sensing period, one of the second (NA-1) sensing areas is selected and sensed with a probability of 1 / (NA-1). The second (NA-1) sensing area includes the last sensing area and does not include the initial sensing area in the first (NA-1) sensing area.

[0026] During a third second sensing period immediately after the next second sensing period of the second sensing frame period, one of the (NA-2) sensing areas is selected and sensed with a probability of 1 / (NA-2). The (NA-2) sensing areas do not include the initial sensing area and one of the second (NA-1) sensing areas.

[0027] According to the disclosed sensor device and the method of driving the same, noise can be reduced without changing the amplitude and frequency band of the driving signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other features of the disclosure will become more apparent by describing the disclosed embodiments in more detail with reference to the accompanying drawings, in which: Figure 1 is a diagram showing a display device according to a disclosed embodiment; Figures 2 to 4 is a diagram showing a display unit and a display driver according to a disclosed embodiment; Figure 5 is a diagram showing a sensor device according to a disclosed embodiment; Figure 6 is a diagram showing a sensor receiver according to a disclosed embodiment; Figure 7 is a diagram illustrating a method of driving a sensor device according to a disclosed embodiment; Figure 8 and Fig. 9 is a diagram illustrating a method of driving a sensor device according to a disclosed embodiment; Fig.10 is a diagram showing a sensor unit according to a disclosed embodiment; Fig.11 is a diagram showing the construction of a sensing frame according to a disclosed embodiment; Fig.12 is a diagram showing a configuration of a sensing period according to a disclosed embodiment; and Figures 13 to 19 is a diagram showing an exemplary configuration of a display device according to a disclosed embodiment. DETAILED DESCRIPTION

[0029] Hereinafter, various embodiments of the disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily practice the disclosure. The disclosure may be implemented in various different forms and is not limited to the embodiments described herein.

[0030] In order to clearly describe the disclosure, parts not related to the description are omitted, and the same or similar elements will be represented by the same reference numerals throughout the specification. Therefore, the above reference numerals may be used in other drawings.

[0031] For the convenience of description, the size and thickness of each component shown in the drawings are arbitrarily shown, and therefore the disclosure is not necessarily limited to the contents shown in the drawings. In the drawings, the thickness may be exaggerated to clearly show each layer and region.

[0032] In the specification, the expression "same" may mean "substantially the same". That is, the expression "same" may be the same enough for a person of ordinary skill to understand that it is the same. Other expressions may also be expressions in which "substantially" is omitted.

[0033] Figure 1 is a diagram showing a display device according to a disclosed embodiment.

[0034] Reference Figure 1, a display device 1 according to a disclosed embodiment may include a panel 10 and a driving circuit 20 for driving the panel 10. For example, the panel 10 may include a display unit 110 for displaying an image and a sensor unit 120 for sensing input (such as touch, pressure, fingerprint, and hovering). For example, the panel 10 may include a pixel PX and a sensor SC positioned to overlap at least a portion of the pixel PX. In an embodiment, the sensor SC may include a first sensor TX (i.e., a first sensor electrode or a first sensor line) and a second sensor RX (i.e., a second sensor electrode or a second sensor line). In an embodiment (e.g., in a self-capacitive touch sensor), the sensor SC may include a single sensor electrode and may measure a change in capacitance relative to ground caused by a typical user touch.

[0035] The driving circuit 20 may include a display driver 210 for driving the display unit 110 and a sensor driver 220 for driving the sensor unit 120. For example, the pixel PX may display an image in units of a display frame period. For example, the sensor SC may sense a user's input in units of a sensing frame period. The sensing frame period and the display frame period may be independent of each other and may be different from each other. The sensing frame period and the display frame period may be synchronized with each other, or may not be synchronized. In an example, the sensing frame period and the display frame period may be equal to each other.

[0036] According to an embodiment, the display unit 110 and the sensor unit 120 may be manufactured separately and then arranged and / or combined so that the pixels PX of the display unit 110 and the sensors SC of the sensor unit 120 may overlap each other in at least one region. In an embodiment, the display unit 110 and the sensor unit 120 may be manufactured integrally. For example, the sensor unit 120 may be directly formed on at least one substrate constituting the display unit 110 (e.g., an upper substrate and / or a lower substrate or a thin film encapsulation layer of a display panel) or other insulating layers or various types of functional layers (e.g., an optical layer or a protective layer).

[0037] Reference Figure 1 , the sensor unit 120 may be disposed on the front surface (e.g., the upper surface on which an image is displayed) of the display unit 110, but the position of the sensor unit 120 is not limited thereto. For example, in an embodiment, the sensor unit 120 may be disposed on the rear surface or both surfaces of the display unit 110. In an embodiment, the sensor unit 120 may be disposed on at least one edge region of the display unit 110.

[0038] The display unit 110 may include a display substrate 111 and a plurality of pixels PX formed on the display substrate 111. The pixels PX may be disposed in a display area DA of the display substrate 111.

[0039] The display substrate 111 may include a display area DA displaying an image and a non-display area NDA outside the display area DA. According to an embodiment, the display area DA may be disposed in a central area of ​​the display unit 110, and the non-display area NDA may be disposed in an edge area of ​​the display unit 110 to surround the display area DA.

[0040] The display substrate 111 may be a rigid substrate or a flexible substrate, and its material or physical properties are not particularly limited. For example, the display substrate 111 may be a rigid substrate formed of organic or tempered glass, or may be a flexible substrate formed of a film of plastic or metal material.

[0041] Scan lines SL, data lines DL, and pixels PX connected to the scan lines SL and the data lines DL may be provided in the display area DA. The pixels PX are selected by a scan signal of a conduction level supplied from the scan lines SL, receive a data signal from the data lines DL, and emit light of a brightness corresponding to the data signal. Thus, an image corresponding to the data signal is displayed in the display area DA. The structure of the pixels PX and the driving method thereof are not particularly limited. For example, each of the pixels PX may be implemented as a pixel using various structures and driving methods.

[0042] Various lines and / or built-in circuit units connected to the pixels PX of the display area DA may be disposed in the non-display area NDA. For example, a plurality of lines for supplying various power supplies and control signals to the display area DA may be disposed in the non-display area NDA, and a scan driver may be further disposed in the non-display area NDA.

[0043] The type of the display unit 110 is not particularly limited. For example, the display unit 110 may be implemented as a self-emissive display panel (such as an organic light-emitting display panel). In an embodiment, when the display unit 110 is implemented as a self-emissive type, each pixel PX is not limited to a case where only an organic light-emitting element is included. For example, the light-emitting element of each pixel PX may be composed of an organic light-emitting diode, an inorganic light-emitting diode, a quantum dot / well light-emitting diode, etc. A plurality of light-emitting elements may be provided in each pixel PX. At this time, the plurality of light-emitting elements may be connected in series, in parallel, or in series and in parallel. In an embodiment, the display unit 110 may be implemented as a non-emissive display panel (such as a liquid crystal display panel). When the display unit 110 is implemented as a non-emissive type, the display device 1 may further include a light source (such as a backlight unit).

[0044] The sensor unit 120 includes a sensor substrate 121 and a plurality of sensors SC formed on the sensor substrate 121. The sensors SC may be disposed on the sensor substrate 121 in a sensing area SA.

[0045] The sensor substrate 121 may include a sensing area SA in which a touch input may be sensed and a peripheral area NSA outside the sensing area SA. The sensing area SA may overlap the display area DA. For example, the sensing area SA may correspond to the display area DA (e.g., an area overlapping the display area DA), and the peripheral area NSA may correspond to the non-display area NDA (e.g., an area overlapping the non-display area NDA). When a touch input is made to the display area DA, the touch input may be detected by the sensor unit 120.

[0046] The sensor substrate 121 may be a rigid or flexible substrate, and may include or be formed of at least one insulating layer. The sensor substrate 121 may be a transparent or translucent light-transmitting substrate, but is not limited thereto. The material and physical properties of the sensor substrate 121 are not particularly limited. For example, the sensor substrate 121 may be a rigid substrate such as glass or tempered glass, or may be a flexible substrate such as a thin film of a plastic or metal material. According to an embodiment, at least one substrate constituting the display unit 110 (e.g., a display substrate 111, an encapsulation substrate, and / or a thin film encapsulation layer), or at least one insulating layer or functional layer provided in the interior and / or on the outer surface of the display unit 110 may be used as the sensor substrate 121.

[0047] The sensing area SA corresponds to an area that can respond to a touch input (ie, an active area of ​​the sensor SC). To this end, the sensor SC for sensing a touch input may be disposed in the sensing area SA. According to an embodiment, the sensor SC may include a first sensor TX and a second sensor RX.

[0048] For example, each of the first sensors TX may extend in the first direction DR1. The first sensors TX may be spaced apart in the second direction DR2 and arranged parallel to each other. The second direction DR2 may be different from the first direction DR1. For example, the second direction DR2 may be a direction orthogonal to the first direction DR1. In an embodiment, the extension direction and arrangement direction of the first sensors TX may follow another conventional configuration. Each of the first sensors TX may have a form in which a first unit with a relatively large area and a first bridge with a relatively small area may be connected to each other. Figure 1 In the embodiment, each of the first units is shown as a diamond shape, but each of the first units can be configured as various conventional shapes (such as a circle, a quadrilateral, a triangle, and a grid form). For example, the first bridge can be formed integrally with the first unit at the same layer. In an embodiment, the first bridge can be formed at a layer different from that of the first unit, and can electrically connect adjacent first units to each other.

[0049] For example, each of the second sensors RX may extend in the second direction DR2. The second sensors RX may be spaced apart from each other in the first direction DR1 and arranged parallel to each other. In an embodiment, the extending direction and the arrangement direction of the second sensors RX may follow another conventional configuration. Each of the second sensors RX may have a form in which a second unit with a relatively large area and a second bridge with a relatively small area are connected to each other. Figure 1 In the embodiment, each of the second units is shown as a diamond shape, but may be configured in various conventional shapes (such as a circle, a quadrilateral, a triangle, and a grid form). For example, the second bridge may be formed integrally with the second unit at the same layer. In an embodiment, the second bridge may be formed at a layer different from that of the second unit, and may electrically connect adjacent second units to each other.

[0050] For example, the first unit of the first sensor TX and the second unit of the second sensor RX may be formed in the same conductive layer. The first bridge of the first sensor TX and the second bridge of the second sensor RX may be formed in different conductive layers, and an insulating layer is placed between the first bridge of the first sensor TX and the second bridge of the second sensor RX. For example, when the first bridge of the first sensor TX and the first unit and the second unit are formed in the same layer, the second bridge of the second sensor RX may be formed in another layer different from the first bridge, the first unit and the second unit, and an insulating layer is placed between the second bridge of the second sensor RX and the first bridge, the first unit and the second unit. When the second bridge of the second sensor RX and the first unit and the second unit are formed in the same layer, the first bridge of the first sensor TX may be formed in another layer different from the second bridge, the first unit and the second unit, and an insulating layer is placed between the first bridge of the first sensor TX and the second bridge, the first unit and the second unit.

[0051] In an embodiment, the first unit of the first sensor TX and the second unit of the second sensor RX may be formed in different conductive layers, and an insulating layer is disposed between the first unit of the first sensor TX and the second unit of the second sensor RX. The first unit of the first sensor TX and the first bridge may be formed in the same conductive layer. The second unit of the second sensor RX and the second bridge may be formed in the same conductive layer.

[0052] According to an embodiment, each of the first sensor TX and the second sensor RX may be conductive. For example, each of the first sensor TX and the second sensor RX may include at least one of a metal, an alloy, a transparent conductive material, and various other conductive materials, or may be formed of at least one of a metal, an alloy, a transparent conductive material, and various other conductive materials. For example, the first sensor TX and the second sensor RX may include at least one of various metal materials including gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and platinum (Pt) and their alloys, or may be formed of at least one of various metal materials including gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and platinum (Pt) and their alloys. The first sensor TX and the second sensor RX may be constructed in a mesh form. The first sensor TX and the second sensor RX may include a material including indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), antimony zinc oxide (AZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (SnO 2 ), silver nanowires (AgNW), carbon nanotubes, and graphene. The first sensor TX and the second sensor RX may be conductive. For example, the first sensor TX and the second sensor RX may include or be formed of at least one of the various conductive materials. Each of the first sensor TX and the second sensor RX may be formed of a single layer or a multilayer, and the cross-sectional structure thereof is not particularly limited.

[0053] Sensor lines for electrically connecting the first sensor TX and the second sensor RX to the sensor driver 220 may be densely disposed in the peripheral area NSA of the sensor unit 120 .

[0054] The driving circuit 20 may include a display driver 210 for driving the display unit 110 and a sensor driver 220 for driving the sensor unit 120. In an embodiment, the display driver 210 and the sensor driver 220 may be integrated chips (ICs) separated from each other. In an embodiment, at least a portion of the display driver 210 and the sensor driver 220 may be integrated together into one IC. In an embodiment, the display driver 210 and the sensor driver 220 may be integrated into one IC.

[0055] The display driver 210 is electrically connected to the display unit 110 to drive the pixels PX. For example, the display driver 210 may include a data driver and a timing controller, and a scan driver may be separately installed in the non-display area NDA of the display unit 110. In an embodiment, the display driver 210 may include all or at least a portion of the data driver, the timing controller, and the scan driver.

[0056] The sensor driver 220 is electrically connected to the sensor unit 120 to drive the sensor unit 120. The sensor driver 220 may include a sensor transmitter and a sensor receiver. According to an embodiment, the sensor transmitter and the sensor receiver may be integrated into one IC, but are not limited thereto.

[0057] Figures 2 to 4 is a diagram illustrating a display unit and a display driver according to a disclosed embodiment.

[0058] Reference Figure 2 , the display driver 210 may include a timing controller 11 and a data driver 12, and the display unit 110 may include a scan driver 13, a pixel unit 14, and an emission driver 15. However, as described above, whether each functional unit is integrated into one IC, integrated into a plurality of ICs, or mounted on the display substrate 111, may be configured differently according to the specifications of the display device 1.

[0059] The timing controller 11 may receive a grayscale and a timing signal for each frame period from the processor 9. In an embodiment, the processor 9 may correspond to at least one of a graphics processing unit (GPU), a central processing unit (CPU), and an application processor (AP). The timing signal may include a vertical synchronization signal, a horizontal synchronization signal, or a data enable signal.

[0060] Each cycle of the vertical synchronization signal may correspond to each display frame cycle. Each cycle of the horizontal synchronization signal may correspond to each horizontal cycle. A grayscale may be supplied in units of horizontal lines in each horizontal cycle in response to a pulse of an enable level of a data enable signal. A horizontal line may refer to pixels (e.g., a pixel row) connected to the same scan line and emission line.

[0061] The timing controller 11 may render gray levels to correspond to the specifications of the display device 1. For example, the processor 9 may provide a red gray level, a green gray level, and a blue gray level for each unit point. For example, when the pixel unit 14 has an RGB stripe structure, the pixel may correspond to each gray level one by one. In this case, the rendering of the gray level may be unnecessary. However, for example, when the pixel unit 14 has a PENTILE ®When the structure is configured, since adjacent unit points share pixels, the pixels may not correspond to each gray level one by one, and gray level rendering may be necessary. The rendered or unrendered gray level may be provided to the data driver 12. The timing controller 11 may provide a data control signal to the data driver 12. The timing controller 11 may provide a scan control signal to the scan driver 13, and an emission control signal to the emission driver 15.

[0062] The data driver 12 may generate data voltages (ie, data signals) to be supplied to the data lines DL1, DL2, DL3, DL4, . . . , and DLn using the grayscale and data control signals received from the timing controller 11. “n” may be an integer greater than zero.

[0063] The scan driver 13 may generate a scan signal to be provided to the scan lines SL0, SL1, SL2, ..., and SLm using a scan control signal (such as a clock signal and a scan start signal) received from the timing controller 11. The scan driver 13 may sequentially supply a scan signal having a pulse of an on level to the scan lines SL0 to SLm. The scan driver 13 may include a scan stage constructed in the form of a shift register. The scan driver 13 may generate a scan signal in a method of sequentially transmitting a scan start signal in the form of a pulse of an on level to a next scan stage under the control of a clock signal. "m" may be an integer greater than 0.

[0064] The emission driver 15 may generate an emission signal to be provided to the emission lines EL1, EL2, EL3, ..., and ELo using an emission control signal (such as a clock signal and an emission stop signal) received from the timing controller 11. The emission driver 15 may sequentially supply an emission signal having a pulse of a cut-off level to the emission lines EL1 to ELo. The emission driver 15 may include an emission stage constructed in the form of a shift register. The emission driver 15 may generate an emission signal in a method of sequentially transmitting an emission stop signal in the form of a pulse of a cut-off level to the next emission stage according to the control of the clock signal. "o" may be an integer greater than 0.

[0065] The pixel unit 14 includes pixels. Each pixel PXij can be connected to a corresponding data line, a scan line, and an emission line. The pixel can include a pixel that emits light of a first color, a pixel that emits light of a second color, and a pixel that emits light of a third color. The first color, the second color, and the third color can be different colors. For example, the first color can be one of red, green, and blue, the second color can be a color other than the first color among red, green, and blue, and the third color can be a color other than the first color and the second color among red, green, and blue. In an embodiment, magenta, cyan, and yellow can be used as the first to third colors instead of red, green, and blue.

[0066] Figure 3 is a diagram illustrating a pixel according to a disclosed embodiment.

[0067] Reference Figure 3 , the pixel PXij includes transistors T1, T2, T3, T4, T5, T6 and T7, a storage capacitor Cst and a light emitting element LD.

[0068] In the following, a circuit constructed by a P-type transistor is described as an example. However, a person skilled in the art will be able to design a circuit composed of an N-type transistor by making the polarity of the voltage applied to the gate terminal different. Similarly, a person skilled in the art will be able to design a circuit constructed by a combination of a P-type transistor and an N-type transistor. P-type transistors are generally referred to as transistors in which the amount of current increases when the voltage difference between the gate electrode and the source electrode increases in the negative direction. N-type transistors are generally referred to as transistors in which the amount of current increases when the voltage difference between the gate electrode and the source electrode increases in the positive direction. Transistors can be constructed in various forms, such as thin film transistors (TFTs), field effect transistors (FETs), and bipolar junction transistors (BJTs).

[0069] The first transistor T1 may have a gate electrode connected to the first node N1, a first electrode connected to the second node N2, and a second electrode connected to the third node N3. The first transistor T1 may be referred to as a driving transistor.

[0070] The second transistor T2 may have a gate electrode connected to the scan line SLi1, a first electrode connected to the data line DLj, and a second electrode connected to the second node N2. The second transistor T2 may be referred to as a scan transistor.

[0071] The third transistor T3 may have a gate electrode connected to the scan line SLi2, a first electrode connected to the first node N1, and a second electrode connected to the third node N3. The third transistor T3 may be referred to as a diode-connected transistor.

[0072] The fourth transistor T4 may have a gate electrode connected to the scan line SLi3, a first electrode connected to the first node N1, and a second electrode connected to the initialization line INTL. The fourth transistor T4 may be referred to as a gate initialization transistor.

[0073] The fifth transistor T5 may have a gate electrode connected to the i-th emission line ELi, a first electrode connected to the first power line ELVDDL, and a second electrode connected to the second node N2. The fifth transistor T5 may be referred to as an emission transistor. In an embodiment, the gate electrode of the fifth transistor T5 may be connected to an emission line different from the emission line connected to the gate electrode of the sixth transistor T6.

[0074] The sixth transistor T6 may have a gate electrode connected to the i-th emission line ELi, a first electrode connected to the third node N3, and a second electrode connected to the anode of the light emitting element LD. The sixth transistor T6 may be referred to as an emission transistor. In an embodiment, the gate electrode of the sixth transistor T6 may be connected to an emission line different from the emission line connected to the gate electrode of the fifth transistor T5.

[0075] The seventh transistor T7 may have a gate electrode connected to the scan line SLi4, a first electrode connected to the initialization line INTL, and a second electrode connected to the anode of the light emitting element LD. The seventh transistor T7 may be referred to as an anode initialization transistor.

[0076] A first electrode of the storage capacitor Cst may be connected to the first power line ELVDDL, and a second electrode may be connected to the first node N1.

[0077] The anode of the light emitting element LD can be connected to the second electrode of the sixth transistor T6, and the cathode can be connected to the second power line ELVSSL. The light emitting element LD can be a light emitting diode. The light emitting element LD can be constructed by an organic light emitting element (organic light emitting diode), an inorganic light emitting element (inorganic light emitting diode) or a quantum dot / well light emitting element (quantum dot / well light emitting diode). The light emitting element LD can emit light of any one of the first color, the second color and the third color. In an embodiment, in this embodiment, only one light emitting element LD can be set in each pixel PXij. However, the present invention is not limited to this. In an embodiment, a plurality of light emitting elements LD can be set in each pixel PXij, and the plurality of light emitting elements LD can be connected in series, in parallel, or in series and parallel.

[0078] The first power line ELVDDL may be supplied with a first power voltage, the second power line ELVSSL may be supplied with a second power voltage, and the initialization line INTL may be supplied with an initialization voltage. For example, the first power voltage may be greater than the second power voltage. For example, the initialization voltage may be equal to or greater than the second power voltage. For example, the initialization voltage may correspond to a data voltage of a minimum voltage among the data voltages that can be provided. In an example, the amplitude of the initialization voltage may be less than the amplitude of the data voltage that can be provided.

[0079] Figure 4 Is shown driving Figure 3 Pixel method diagram.

[0080] In the following, for ease of description, it is assumed that the scan lines SLi1, SLi2, and SLi4 are the i-th scan line SLi, and the scan line SLi3 is the i-1th scan line SL(i-1). However, the connection relationship of the scan lines SLi1, SLi2, SLi3, and SLi4 may be different according to the embodiment. For example, the scan line SLi4 may be the i-1th scan line or the i+1th scan line.

[0081] First, an emission signal of a cut-off level (logic high level) is applied to the i-th emission line ELi, a data voltage DATA(i-1)j of the i-1-th pixel is applied to the data line DLj, and a scan signal of a turn-on level (logic low level) is applied to the scan line SLi3. The high / low of the logic level may vary depending on whether the transistor is P-type or N-type.

[0082] Since the scan signal of the off level is applied to the scan lines SLi1 and SLi2 , the second transistor T2 is turned off and prevents the data voltage DATA(i−1)j from being input to the pixel PXij.

[0083] Since the fourth transistor T4 is turned on, the first node N1 is connected to the initialization line INTL, and the voltage of the first node N1 is initialized. Since the emission signal of the off level is applied to the emission line ELi, the transistors T5 and T6 are turned off, and unnecessary light emission of the light emitting element LD according to the initialization voltage application process is prevented.

[0084] Next, the data voltage DATAij of the i-th pixel PXij is applied to the data line DLj, and the scan signal of the on level is applied to the scan lines SLi1 and SLi2. Therefore, the transistors T2, T1 and T3 are turned on, and the data line DLj and the first node N1 are electrically connected to each other. Therefore, the compensation voltage obtained by subtracting the threshold voltage of the first transistor T1 from the data voltage DATAij can be applied to the second electrode (i.e., the first node N1) of the storage capacitor Cst, and the storage capacitor Cst can maintain a voltage corresponding to the difference between the first power supply voltage and the compensation voltage. Such a period may be referred to as a threshold voltage compensation period or a data writing period.

[0085] When the scan line SLi4 is the i-th scan line, since the seventh transistor T7 is turned on, the anode of the light emitting element LD and the initialization line INTL are connected to each other, and the light emitting element LD is initialized to a charge amount corresponding to the voltage difference between the initialization voltage and the second power supply voltage.

[0086] Thereafter, when an emission signal of a turn-on level is applied to the i-th emission line ELi, transistors T5 and T6 may be turned on, thereby forming a driving current path connecting the first power line ELVDDL, the fifth transistor T5, the first transistor T1, the sixth transistor T6, the light emitting element LD and the second power line ELVSSL.

[0087] The amount of driving current flowing to the first electrode and the second electrode of the first transistor T1 can be adjusted according to the voltage held in the storage capacitor Cst. The light emitting element LD emits light with brightness corresponding to the amount of driving current. The light emitting element LD emits light until an emission signal of a cutoff level is applied to the emission line ELi.

[0088] When the emission signal is at the on level, the pixel PXij receiving the corresponding emission signal may be in a display state. Therefore, the period in which the emission signal is at the on level may be referred to as an emission period EP (or emission-allowed period). In addition, when the emission signal is at the off level, the pixel PXij receiving the corresponding emission signal may be in a non-display state. Therefore, the period in which the emission signal is at the off level may be referred to as a non-emission period NEP (or emission-not-allowed period).

[0089] As reference Figure 4 The described non-emission period NEP is for preventing the pixel PXij from emitting light of an undesired brightness during the initialization period and the data writing period.

[0090] While maintaining the data to be written to the pixel PXij, one or more non-emission periods NEP (eg, one frame period) may be additionally provided. This may be used to effectively represent low gray levels by reducing the emission period EP of the pixel PXij, or to smoothly blur the movement of an image.

[0091] Figure 5 is a diagram showing a sensor device according to a disclosed embodiment.

[0092] Reference Figure 5 , the sensor device SSD according to the disclosed embodiment may include a sensor unit 120 and a sensor driver 220. The sensor device SSD may be included in the display device 1.

[0093] The sensor unit 120 may include first sensors (i.e., first sensor electrodes or first sensor lines) TX1, TX2, TX3, ..., TX(q-1), and TXq and second sensors (i.e., second sensor electrodes or second sensor lines) RX1, RX2, ....., RX(p-2), RX(p-1), and RXp. Each of p and q may be an integer greater than 0. The first sensors TX1 to TXq may extend in the first direction DR1 and may be arranged to be spaced apart from each other and parallel to each other in the second direction DR2. The second sensors RX1 to RXp may extend in the second direction DR2 and may be arranged to be spaced apart from each other and parallel to each other in the first direction DR1. The second sensors RX1 to RXp may intersect with the first sensors TX1 to TXq. The second sensors RX1 to RXp may form mutual capacitance with the first sensors TX1 to TXq, wherein the second sensors RX1 to RXp intersect with the first sensors TX1 to TXq. The sensor driver 220 may sense a change in capacitance and determine whether a user's touch is input and where such a touch is made on the sensing area SA.

[0094] The sensor driver 220 may include a sensor receiver TSC and a sensor transmitter TDC. The sensor transmitter TDC may be connected to the first sensors TX1 to TXq and may supply a driving signal to the first sensors TX1 to TXq. The sensor transmitter TDC may be connected to the first sensors TX1 to TXq through first sensor lines TXL1, TXL2, TXL3, ..., TXL(q-1), and TXLq, respectively.

[0095] The sensor receiver TSC may be connected to the second sensors RX1 to RXp and may receive sensing signals from the second sensors RX1 to RXp. The sensor receiver TSC may be connected to the second sensors RX1 to RXp through second sensor lines RXL1, RXL2, ..., RXL(p-2), RXL(p-1), and RXLp, respectively.

[0096] Figure 6 is a diagram illustrating a sensor receiver according to a disclosed embodiment.

[0097] The sensor transmitter TDC may be connected to the first sensor TX, and the sensor receiver TSC may be connected to the second sensor RX. The number of the second sensors RX and the number of the sensor channels 222 may be the same, and the second sensors RX and the sensor channels 222 may be connected one-to-one. When the number of the sensor channels 222 is less than the number of the second sensors RX, the sensor channels 222 and the second sensors RX may be connected in time division through a multiplexer.

[0098] The sensor receiver TSC may include an amplifier AMP, an analog-to-digital converter (ADC) 224, and a sensor processor (MPU) 226. For example, each sensor channel 222 may be implemented with an analog front end (AFE) including at least one amplifier AMP. The number of each of the analog-to-digital converters 224 and the sensor processor 226 may be less than the number of the sensor channels 222. For example, each of the analog-to-digital converters 224 and the sensor processor 226 may be shared by a plurality of sensor channels 222. According to an embodiment, the number of the analog-to-digital converters 224 may be the same as the number of the sensor channels 222.

[0099] In the amplifier AMP, the first input terminal IN1 may be connected to the corresponding second sensor RX, and the second input terminal IN2 may be connected to the power supply GND. The power supply GND may be a DC power supply. For example, the power supply GND may be grounded. For example, the first input terminal IN1 may be an inverting terminal, and the second input terminal IN2 may be a non-inverting terminal.

[0100] The analog-to-digital converter 224 may be connected to the output terminal OUT1 of the amplifier AMP. The capacitor Ca and the switch SWr may be connected in parallel between the first input terminal IN1 and the output terminal OUT1.

[0101] The sensor receiver TSC may include a plurality of sensor channels 222 connected to a plurality of second sensors RX. Each of the sensor channels 222 may receive a sensing signal from a corresponding second sensor RX. For example, when the sensor transmitter TDC transmits a driving signal to the first sensor TX, the sensor receiver TSC may sense the mutual capacitance of the first sensor TX and the second sensor RX through the sensing signal.

[0102] Mutual capacitances between the first sensor TX and the second sensor RX may differ from each other according to the position of the object OBJ (such as a user's finger) on the sensing area SA, and thus sensing signals received by the sensor channel 222 may also differ from each other. The position of the object OBJ may be detected using the difference between the sensing signals.

[0103] The sensor channel 222 may generate an output signal corresponding to a voltage difference between the first input terminal IN1 and the second input terminal IN2. For example, the sensor channel 222 may amplify the voltage difference between the first input terminal IN1 and the second input terminal IN2 by a predetermined gain and may output the amplified voltage difference.

[0104] According to an embodiment, the sensor channel 222 may be implemented using an integrator including a capacitor Ca and a switch SWr connected in parallel between the first input terminal IN1 and the output terminal OUT1 of the amplifier AMP. For example, the switch SWr may be turned on before receiving the sensing signal, so that the charge of the capacitor Ca may be initialized. At the time point when the sensing signal is received, the switch SWr may be in a cut-off state.

[0105] The analog-to-digital converter 224 converts the analog signal from each input in the sensor channel 222 into a digital signal. The sensor processor 226 may analyze the digital signal to detect the user's input.

[0106] Figure 7 is a diagram illustrating a method of driving a sensor device according to a disclosed embodiment.

[0107] Reference Figure 6 and Figure 7 , shows the driving signals applied to the first sensors TX1, TX2, TX3, TX4, TX5, TX6, TX7, TX8, ..., TX(q-3), TX(q-2), TX(q-1), and TXq during the first sensing frame period SSF1.

[0108] The sensor transmitter TDC may apply the drive signal to the first sensors TX1 to TXq in a time-division manner. The timings of applying the drive signal to the corresponding first sensors TX1 to TXq may not overlap with each other. For example, the sensor transmitter TDC may apply the drive signal to the first sensors TX1 to TXq sequentially. Each of the drive signals may be a voltage signal alternating between a high level and a low level.

[0109] The sensor receiver TSC may receive a sensing signal through the second sensors RX1 to RXp for each driving signal. When the amplitude of the sensing signal detected by a specific second sensor is different from the amplitudes of other sensing signals, it may be determined that the user's touch occurs at the intersection of the first sensor to which the driving signal is applied and the second sensor to which the sensing signal is detected. For example, when the user's touch occurs, the capacitance at the corresponding point between the first sensor and the second sensor may decrease, and thus the amplitude of the sensing signal received from the second sensor may decrease.

[0110] Figure 8 and Fig. 9 is a diagram illustrating a method of driving a sensor device according to a disclosed embodiment.

[0111] Reference Figure 8 , shows the driving signals applied to the first sensors TX1, TX2, TX3, TX4, TX5, TX6, TX7, TX8, ..., TX(q-3), TX(q-2), TX(q-1), and TXq during the first sensing frame period SSF1.

[0112] The sensor unit 120 may include a plurality of sensor groups TSG1, TSG2, ..., and TSGr. Each of the sensor groups TSG1, TSG2, ..., and TSGr may include at least one of the first sensors TX1 to TXq. Each of the sensor groups TSG1, TSG2, ..., and TSGr may include the same number of first sensors among the first sensors TX1 to TXq. The first sensors TX1 to TXq included in different sensor groups TSG1, TSG2, ..., and TSGr may not overlap with each other. For example, the first sensors TX1 to TXq may be grouped into a plurality of sensor groups TSG1 to TSGr.

[0113] The sensor transmitter TDC may apply the drive signal to the sensor groups TSG1, TSG2, ..., and TSGr in a time-division manner. The timing of the drive signals applied to the respective sensor groups TSG1, TSG2, ..., and TSGr may not overlap with each other. For example, the sensor transmitter TDC may apply the drive signal to the sensor groups TSG1, TSG2, ..., and TSGr sequentially. Each of the drive signals may be a signal alternating between a high level and a low level.

[0114] When a driving signal is applied to a specific sensor group among the sensor groups TSG1 to TSGr, the waveforms of the driving signals applied to the first sensors (e.g., four first sensors) included in the sensor groups TSG1 to TSGr may be different from each other. For example, when a driving signal is applied to the first sensor group TSG1, the waveforms of the driving signals applied to the first sensors TX1, TX2, TX3, and TX4 included in the first sensor group TSG1 may be different from each other. Fig. 9 , the sensor transmitter TDC may generate a driving signal corresponding to the encoding matrix EMT, and apply the driving signal to the first sensors TX1, TX2, TX3, and TX4. The encoding matrix EMT may define the waveform of the driving signal of a sensor group TSG1. For example, the rows of the encoding matrix EMT may represent the first sensors TX1, TX2, TX3, and TX4, respectively, and the columns of the encoding matrix EMT may represent the driving signal application periods p1, p2, p3, and p4, respectively. The waveform of the driving signal when the element of the encoding matrix EMT is -1 may have a shape that is inverted relative to the waveform of the driving signal when the element of the encoding matrix EMT is 1. For example, when the driving signal when the element is 1 is a high level, the driving signal when the element is -1 may be a low level. For example, the phase of the driving signal when the element is 1 may differ by 180 degrees from the phase of the driving signal when the element is -1.

[0115] The sensor receiver TSC may receive a sensing signal through the second sensors RX1 to RXp for each of the driving signals. Hereinafter, for convenience of description, only some of the second sensors RX1 to RXp are described, but the same description may be applied to the other second sensors RX7 to RXp.

[0116] Reference Fig. 9, for example, it is assumed that the user's touch occurs at the intersection of the first sensor TX2 and the second sensor RX4. It is assumed that the amplitude of the capacitance detected at the intersection of the first sensor TX2 and the second sensor RX4 where the user's touch does not occur is 1Cm. During the first period p1, the amplitude of the capacitance sensed by each of the second sensors RX1, RX2, RX3, RX5 and RX6 may be 2Cm. For example, during the first period p1, a capacitance of 2Cm obtained by adding a capacitance of -Cm of the drive signal passing through the first sensor TX1, a capacitance of +Cm of the drive signal passing through the first sensor TX2, a capacitance of +Cm of the drive signal passing through the first sensor TX3, and a capacitance of +Cm of the drive signal passing through the first sensor TX4 may be detected by each of the second sensors RX1, RX2, RX3, RX5 and RX6.

[0117] On the other hand, during the first period p1, the magnitude of the capacitance sensed by the second sensor RX4 may be (2Cm-dCm). For example, during the first period p1, the capacitance of (2Cm-dCm) obtained by adding the capacitance of -Cm of the drive signal passing through the first sensor TX1, the capacitance of (+Cm-dCm) of the drive signal passing through the first sensor TX2, the capacitance of +Cm of the drive signal passing through the first sensor TX3, and the capacitance of +Cm of the drive signal passing through the first sensor TX4 may be detected by the second sensor RX4. "dCm" may be a capacitance generated by a user's touch.

[0118] During the second period p2, the magnitude of the capacitance sensed by each of the second sensors RX1, RX2, RX3, RX5, and RX6 may be 2Cm. For example, during the second period p2, each of the second sensors RX1, RX2, RX3, RX5, and RX6 may detect a capacitance of 2Cm obtained by adding a capacitance of +Cm of the drive signal passing through the first sensor TX1, a capacitance of -Cm of the drive signal passing through the first sensor TX2, a capacitance of +Cm of the drive signal passing through the first sensor TX3, and a capacitance of +Cm of the drive signal passing through the first sensor TX4.

[0119] On the other hand, during the second period p2, the magnitude of the capacitance sensed by the second sensor RX4 may be (2Cm+dCm). For example, during the second period p2, the capacitance (2Cm+dCm) obtained by adding the capacitance of the +Cm of the drive signal passing through the first sensor TX1, the capacitance of the -(Cm-dCm) of the drive signal passing through the first sensor TX2, the capacitance of the +Cm of the drive signal passing through the first sensor TX3, and the capacitance of the +Cm of the drive signal passing through the first sensor TX4 may be detected by the second sensor RX4.

[0120] Since the capacitance detected in the third period p3 and the fourth period p4 is similar to that of the case of the first period p1 , a repeated description is omitted.

[0121] The sensor processor 226 of the sensor receiver TSC can generate the final data FDATA by matrix multiplication of the encoding matrix EMT and the sensing data SDATA. Referring to the final data FDATA, it can be confirmed that the capacitance of the point where the user's touch does not occur is detected as 4Cm, and the capacitance of the point where the user's touch occurs is detected as (4Cm-4dCm). Therefore, the sensor receiver TSC can detect that the user's touch occurs at the intersection of the first sensor TX2 and the second sensor RX4.

[0122] Fig.10 is a diagram illustrating a sensor unit according to a disclosed embodiment.

[0123] Reference Fig.10 , the sensor unit 120 may include a plurality of sensing areas AR1, AR2, AR3, and AR4. The number of the plurality of sensing areas AR1 to AR4 may be an integer greater than 2. Hereinafter, for convenience of description, it is assumed that the number of the plurality of sensing areas AR1 to AR4 is 4.

[0124] The plurality of sensing areas AR1, AR2, AR3, and AR4 may include different first sensors TX1, TX2, ..., TX(q-1), and TXq. The first sensors TX1 to TXq included in the sensing areas AR1, AR2, AR3, and AR4 may not overlap with each other.

[0125] The plurality of sensing areas AR1, AR2, AR3, and AR4 may include the same second sensors RX1, RX2, ..., RX(p-1), and RXp. The second sensors RX1 to RXp may be shared by the sensing areas AR1, AR2, AR3, and AR4. For example, the second sensors RX1 to RXp may extend throughout the sensing areas AR1 to AR4.

[0126] Fig.11 is a diagram illustrating a construction of a sensing frame according to a disclosed embodiment.

[0127] During the first sensing frame period SSF1 including a plurality of sensing periods SP1, SP2, SP3 and SP4, the sensor driver 220 may time-divisionally sense each of the plurality of sensing areas AR1, AR2, AR3 and AR4 once. In an embodiment, the number of sensing periods in the first sensing frame period SSF1 may be equal to the number of sensing areas. In addition, during the second sensing frame period SSF2 including a plurality of sensing periods SP5, SP6, SP7 and SP8, the sensor driver 220 may time-divisionally sense each of the plurality of sensing areas AR1, AR2, AR3 and AR4 once. In an embodiment, the number of sensing periods in the second sensing frame period SSF2 may be equal to the number of sensing areas. Similarly, the sensor driver 220 may time-divisionally sense each of the plurality of sensing areas AR1, AR2, AR3 and AR4 once in each of the other sensing frame periods ..., SSF14 and SSF15. In an embodiment, the number of sensing periods of each sensing frame period may be equal to the number of sensing periods of the other sensing frame periods.

[0128] In an embodiment, in each sensing frame period, each of the sensing areas may be randomly selected and sensed. For example, the sensing frame period may have a different order in which each of the sensing areas is randomly sensed. In an embodiment, in two consecutive sensing frame periods, the initial sensing area to be sensed in the initial sensing period (i.e., the earliest sensing period) of the latter sensing frame period of the two consecutive sensing frame periods may be different from the last sensing area sensed in the last sensing period of the previous sensing frame period of the two consecutive sensing frame periods. For example, it is assumed that the first sensing frame period SSF1 and the second sensing frame period SSF2 are two consecutive sensing frame periods. For ease of description, it is assumed that in the first sensing frame period SSF1 (i.e., the previous sensing frame period of the two consecutive sensing frame periods), the sensing area AR2 may be randomly sensed during the last sensing period SP4 of the first sensing frame period SSF1. The sensor driver 220 may randomly set one of the other sensing areas AR1, AR3, and AR4 except for the sensing area AR2 sensed during the last sensing period SP4 of the first sensing frame period SSF1. For example, the sensor driver 220 may set the sensing area AR3 as an initial sensing area to be sensed during the initial sensing period SP5 of the second sensing frame period SSF2, which is different from the sensing area AR2 sensed during the last sensing period SP4 of the first sensing frame period SSF1. Once the initial sensing area (e.g., AR3) is set, the initial sensing area is selected and sensed during the initial sensing period (e.g., SP5), and other sensing areas (e.g., AR1, AR2, and AR4) are randomly selected and sensed during subsequent sensing periods (e.g., SP6 to SP8) of the second sensing frame period SSF2.

[0129] According to the present embodiment, the noise introduced from the sensor unit 120 to the display unit 110 can be dispersed by sensing a random sensing area in each of the sensing periods SP1 to SP60. For example, the order in which the plurality of sensing areas AR1 to AR4 are sensed during the first sensing frame period SSF1 may be different from the order in which the plurality of sensing areas AR1 to AR4 are sensed during the second sensing frame period SSF2. Therefore, with respect to the same sensing area, the driving signal may be applied with a random time difference instead of the same time difference, thereby reducing abnormal display (such as stripes) of the display unit 110.

[0130] In addition, noise can be uniformly dispersed by applying specific restrictions to the random selection of the sensing area. During the first sensing period SP1 of the first sensing frame period SSF1, the sensor driver 220 can select and sense one sensing area AR1 among the plurality of sensing areas AR1 to AR4 with a probability of 1 / A. Here, it is assumed that the probability 1 is a probability of 100%. Fig.11 The mark “O” indicates the selected sensing area.

[0131] Next, during the second sensing period SP2 of the first sensing frame period SSF1, the sensor driver 220 may select and sense one sensing area AR3 among the (A-1) sensing areas AR2, AR3, and AR4 with a probability of 1 / (A-1). At this time, the (A-1) sensing areas AR2, AR3, and AR4 may not include the sensing area AR1 sensed during the first sensing period SP1 of the first sensing frame period SSF1. Since the sensing area has been sensed in the corresponding sensing frame period, Fig.11 The mark "X" indicates a sensing area that cannot be selected.

[0132] Next, during the third sensing period SP3 of the first sensing frame period SSF1, the sensor driver 220 may select and sense one sensing area AR4 among the (A-2) sensing areas AR2 and AR4 with a probability of 1 / (A-2). At this time, the (A-2) sensing areas AR2 and AR4 may not include the sensing areas AR1 and AR3 sensed during the first sensing period SP1 and the second sensing period SP2 of the first sensing frame period SSF1.

[0133] Next, during the fourth sensing period SP4 of the first sensing frame period SSF1, the sensor driver 220 may select and sense the sensing area AR2 with a probability of 1 / (A-3). At this time, the (A-3) sensing areas AR2 may not include the sensing areas AR1, AR3, and AR4 sensed during the first sensing period SP1, the second sensing period SP2, and the third sensing period SP3 of the first sensing frame period SSF1.

[0134] Next, during the first sensing period SP5 of the second sensing frame period SSF2, the sensor driver 220 may select and sense one sensing area AR3 among the (A-1) sensing areas AR1, AR3, and AR4 with a probability of 1 / (A-1). At this time, the (A-1) sensing areas AR1, AR3, and AR4 may not include the sensing area AR2 sensed during the last sensing period SP4 of the first sensing frame period SSF1.

[0135] Next, during the second sensing period SP6 of the second sensing frame period SSF2, the sensor driver 220 may select and sense one sensing area AR1 among the (A-1) sensing areas AR1, AR2, and AR4 with a probability of 1 / (A-1). At this time, the sensing area AR2 excluded in the first sensing period SP5 may be included in the (A-1) sensing areas, and the (A-1) sensing areas AR1, AR2, and AR4 may not include the sensing area AR3 sensed during the first sensing period SP5 of the second sensing frame period SSF2.

[0136] Next, during the third sensing period SP7 of the second sensing frame period SSF2, the sensor driver 220 may select and sense one sensing area AR4 among the (A-2) sensing areas AR2 and AR4 with a probability of 1 / (A-2). At this time, the (A-2) sensing areas AR2 and AR4 may not include the sensing areas AR1 and AR3 sensed during the first sensing period SP5 and the second sensing period SP6 of the second sensing frame period SSF2.

[0137] Next, during the fourth sensing period SP8 of the second sensing frame period SSF2, the sensor driver 220 may select and sense (A-3) sensing areas AR2 with a probability of 1 / (A-3). At this time, the (A-3) sensing areas AR2 may not include the sensing areas AR1, AR3, and AR4 sensed during the first sensing period SP5, the second sensing period SP6, and the third sensing period SP7 of the second sensing frame period SSF2.

[0138] Similarly, the sensing areas AR1, AR2, AR3, and AR4 may be randomly sensed during subsequent sensing frame periods, ..., SSF14, and SSF15. It may be confirmed that since each of the sensing areas AR1, AR2, AR3, and AR4 is equally sensed 15 times during 15 sensing frame periods, noise may be uniformly dispersed.

[0139] Fig.12 is a diagram illustrating a configuration of a sensing period according to a disclosed embodiment.

[0140] Reference Fig.12, as an example, by modifying Figure 8 Assume that the sensing area AR1 includes first sensors TX1 to TX12.

[0141] According to an embodiment, the sensor driver 220 may randomly apply the driving signal to the sensor groups TSG1, TSG2, and TSG3. According to the present embodiment, noise may be dispersed more effectively.

[0142] Figures 13 to 19 is a diagram showing an exemplary configuration of a display device. Figures 13 to 19 The reference numerals and Figures 1 to 12 The reference numerals are independent of each other.

[0143] Fig.13 is a diagram showing a substrate according to a disclosed embodiment, and Fig.14 is a diagram showing a display device according to a disclosed embodiment.

[0144] In the following embodiments, the plane may define the position in the first direction DR1 and the second direction DR2, and the height may define the position in the third direction DR3 (refer to Fig.15 ). The first direction DR1, the second direction DR2, and the third direction DR3 may be directions orthogonal to each other.

[0145] The substrate SUB may include a display area DA, a non-display area NDA, a first additional area ADA1, and a second additional area ADA2.

[0146] The display area DA may have a rectangular shape. Each corner of the display area DA may be an angular shape or a curved shape. The present invention is not limited thereto. For a circular display, the display area DA may have a circular shape. In an embodiment, the display area DA may be constructed of a polygon or an ellipse other than a quadrilateral. As described above, the shape of the display area DA may be set differently depending on the product.

[0147] The pixels may be positioned in the display area DA. Depending on the type of the display device DP, each of the pixels may include a light emitting diode or may include a liquid crystal layer.

[0148] The non-display area NDA may surround the periphery of the display area DA. For example, the non-display area NDA may have a rectangular shape. Each corner of the non-display area NDA may have an angular shape or a curved shape. Fig.14In the embodiment, each corner of the non-display area NDA has a curved shape. The non-display area NDA may have a circular shape. Since minimizing the non-display area NDA is advantageous for a narrow frame structure, the shape of the non-display area NDA may be similar to that of the display area DA.

[0149] The first additional area ADA1 may be positioned between the non-display area NDA and the second additional area ADA2. The first additional area ADA1 may be connected to the non-display area NDA at a first boundary ED1. The first additional area ADA1 may be connected to the second additional area ADA2 at a second boundary ED2. Each of the first boundary ED1 and the second boundary ED2 may extend in a first direction DR1.

[0150] The first additional area ADA1 may have a width that decreases from the first boundary ED1 toward the second boundary ED2. For example, the width of the first additional area ADA1 in the first direction DR1 may narrow toward the second direction DR2. Therefore, the first additional area ADA1 may include a curved first side RC1 and a second side RC2. The sides RC1 and RC2 may protrude toward the inside of the substrate SUB (e.g., the center of the substrate SUB).

[0151] Fig.14 It is shown that the first additional area ADA1 includes two sides RC1 and RC2 in the first direction DR1 and the direction opposite to the first direction DR1. In an embodiment, the boundary positioned in the first direction DR1 may coincide with the boundary of the non-display area NDA, so the first additional area ADA1 may include only the first side RC1. In an embodiment, the boundary positioned in the direction opposite to the first direction DR1 may coincide with the boundary of the non-display area NDA, so the first additional area ADA1 may include only the second side RC2.

[0152] The second additional area ADA2 may have a rectangular shape. Each corner of the second additional area ADA2 positioned in the second direction DR2 may be an angular shape or a bent shape. Fig.14 It is shown that each corner of the second additional area ADA2 positioned in the second direction DR2 is in a horn shape.

[0153] The encapsulation layer TFE may be positioned on the pixel. For example, the encapsulation layer TFE may cover the pixel in the display area DA, and the boundary of the encapsulation layer TFE may be positioned in the non-display area NDA. The encapsulation layer TFE may cover the light emitting elements and circuit elements of the pixel in the display area DA, thereby preventing damage due to external moisture or impact.

[0154] The sensing electrodes SC1 and SC2 may be positioned on the encapsulation layer TFE. The sensing electrodes SC1 and SC2 may sense inputs (such as touch, hovering, gestures, and proximity) through a body part (e.g., a finger or hand) of a user. The sensing electrodes SC1 and SC2 may be configured in different shapes according to various methods such as a resistive type, a capacitive type, an electromagnetic (EM) type, and an optical type. For example, when the sensing electrodes SC1 and SC2 are configured as a capacitive type, the sensing electrodes SC1 and SC2 may be driven in a mutual capacitance type. However, the present invention is not limited thereto. In an embodiment, a single electrode may be driven in a self-capacitance type. Hereinafter, for ease of description, the case where the sensing electrodes SC1 and SC2 are configured as a mutual capacitance type will be described as an example.

[0155] When the sensing electrodes SC1 and SC2 are driven in a mutual capacitance type, a driving signal may be transmitted through a sensing line corresponding to the first sensing electrode SC1, and a sensing signal may be received through a sensing line corresponding to the second sensing electrode SC2, and the second sensing electrode SC2 forms a mutual capacitance with the first sensing electrode SC1. When the user's body approaches, the mutual capacitance between the first sensing electrode SC1 and the second sensing electrode SC2 may change, so the user's touch or non-touch may be detected based on the difference in the touch signal based on the change in mutual capacitance. In an embodiment, a driving signal may be transmitted through a sensing line corresponding to the second sensing electrode SC2, and a sensing signal may be received through a sensing line corresponding to the first sensing electrode SC1, and the first sensing electrode SC1 forms a mutual capacitance with the second sensing electrode SC2.

[0156] Pads (or "pads") PDE1, PDE2, and PDE3 may be positioned in the second additional area ADA2. Pads PDE1 and PDE3 may be connected to sensing electrodes SC1 and SC2 positioned above the encapsulation layer TFE through sensing lines IST1 and IST2. Pads PDE1 and PDE3 may be connected to an external touch integrated chip (IC). Pad PDE2 may be connected to a pixel or a pixel driver positioned below the encapsulation layer TFE through a display line DST. The driver may include a scan driver, an emission driver, or a data driver. The driver may be positioned below the encapsulation layer TFE, or may be positioned in an external display IC connected through pad PDE2.

[0157] When the display device DP is a mutual capacitance type, the touch IC can send a drive signal through the first sensing line IST1 and receive a sensing signal through the second sensing line IST2. In an embodiment, a drive signal can be sent through the second sensing line IST2, and a sensing signal can be received through the first sensing line IST1. For reference, when the display device DP is a self-capacitance type, the driving method of the first sensing line IST1 and the second sensing line IST2 can be the same. The display line DST may include a control line, a data line, or a power line. Through the display line DST, power and / or signals are provided to the pixel to display an image. A signal can be provided from a driver connected to the display line DST.

[0158] Fig.13 shows the state of the substrate SUB being bent, Fig.14 2 shows a state in which the substrate SUB is not bent. Fig.14 As shown in FIG. 1 , in a state where the display device DP is not bent, after stacking elements on the substrate SUB, the display device DP may be as shown in FIG. Fig.13 The bend is shown in .

[0159] The substrate SUB may include a first curved area BA1 extending from a first side RC1 of the first additional area ADA1 to overlap with the non-display area NDA. The first curved area BA1 may extend to overlap with the display area DA. For example, each of the display area DA, the non-display area NDA, and the first additional area ADA1 may partially overlap with the first curved area BA1. The first curved area BA1 may have a width in the first direction DR1 and a length extending in the second direction DR2. The first bending axis BX1 may be defined as a folding line extending in the second direction DR2 at the center of the first curved area BA1. According to an embodiment, the first curved area BA1 may be a portion where stress is reduced due to the removal of a portion of the insulating layer compared to another portion around the first curved area BA1. According to an embodiment, the first curved area BA1 may have the same configuration as other portions around the first curved area BA1.

[0160] The substrate SUB may include a third bending area BA3 extending from the second side RC2 of the first additional area ADA1 to overlap the non-display area NDA. The third bending area BA3 may extend to overlap the display area DA. For example, each of the display area DA, the non-display area NDA, and the first additional area ADA1 may partially overlap the third bending area BA3. The third bending area BA3 may have a width in the first direction DR1 and a length extending in the second direction DR2. The third bending axis BX3 may be defined as a folding line extending in the second direction DR2 at the center of the third bending area BA3. According to an embodiment, the third bending area BA3 may be a portion where stress is reduced by removing a portion of the insulating layer compared to another portion around the third bending area BA3. According to an embodiment, the third bending area BA3 may have the same configuration as other portions around the third bending area BA3.

[0161] The second additional area ADA2 may include a second bending area BA2. The second bending area BA2 may have a width in the second direction DR2 and a length extending in the first direction DR1. The second bending axis BX2 may be defined as a folding line extending in the first direction DR1 at the center of the second bending area BA2. According to an embodiment, the second bending area BA2 may be a portion where stress is reduced due to removal of a portion of an insulating layer or the like compared to other portions around the second bending area BA2. According to an embodiment, the second bending area BA2 may have the same configuration as other portions around the second bending area BA2.

[0162] The first to third bending areas BA1 , BA2 , and BA3 may not overlap each other.

[0163] The term "folding" is intended to mean that the shape is not fixed and can be changed from its original shape to another shape, and may include folding, bending, or curling along one or more bending axes. The side frame width of the display device DP in the first direction DR1 and the direction opposite to the first direction DR1 may be reduced by the first bending area BA1 and the third bending area BA3. The side frame width of the display device DP in the second direction DR2 may be reduced by the second bending area BA2.

[0164] Fig.15 It is along Fig.14 For example, Fig.15 Shown along Fig.14 2 is a cross-sectional view taken along line II′ passing through the first pad PDE1 and the first sensing line IST1.

[0165] First, the display area DA is described. In the disclosed embodiment, the pixels PX are arranged in the display area DA. Each pixel PX may include a transistor connected to a corresponding line of the display lines DST, a light emitting element LD connected to the transistor (see FIG. Figure 3 ) and capacitor Cst. Fig.15 In the figure, for the convenience of description, one transistor, one light emitting element LD, and one capacitor Cst are shown as an example for one pixel PX.

[0166] The substrate SUB may be formed of an insulating material such as glass or resin. The substrate SUB may be formed of a flexible material so that the substrate SUB may be bent or folded. The substrate SUB may have a single-layer structure or a multi-layer structure.

[0167] For example, the substrate SUB may include at least one of polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate, or may be formed of at least one of polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate. However, the material forming the substrate SUB may be changed differently. In an embodiment, the substrate SUB may include or be formed of fiber reinforced plastic (FRP).

[0168] For example, when the substrate SUB has a multi-layer structure, an inorganic material such as silicon nitride, silicon oxide, and silicon oxynitride may be interposed between the layers in a single layer or in multiple layers.

[0169] The buffer layer BF may cover the substrate SUB. The buffer layer BF may prevent impurities from diffusing into the channel of the transistor. The buffer layer BF may be an inorganic insulating layer formed of an inorganic material. For example, the buffer layer BF may be formed of silicon nitride, silicon oxide, silicon oxynitride, etc., and may be omitted according to the material and process conditions of the substrate SUB. According to an embodiment, a barrier layer may also be provided.

[0170] The active layer ACT may be positioned on the buffer layer BF. The active layer ACT may be patterned to construct a channel, a source electrode, and a drain electrode of a transistor, or may construct a line. The active layer ACT may be formed of a semiconductor material. The active layer ACT may be a semiconductor pattern formed of polycrystalline silicon, amorphous silicon, or an oxide semiconductor. The channel of the transistor may be a semiconductor pattern not doped with impurities, and may be an intrinsic semiconductor. The source electrode, the drain electrode, and the line may be a semiconductor pattern doped with impurities. As impurities, impurities such as n-type impurities, p-type impurities, or other metals may be used.

[0171] The first gate insulating layer GI1 may cover the active layer ACT. The first gate insulating layer GI1 may be an inorganic insulating layer formed of an inorganic material. As the inorganic material, an inorganic insulating material such as polysiloxane, silicon nitride, silicon oxide, or silicon oxynitride may be used.

[0172] The gate electrode GE of the transistor and the lower electrode LE of the capacitor Cst may be positioned on the first gate insulating layer GI1. For example, the first gate insulating layer GI1 may be interposed between the gate electrode GE and the active layer ACT. The gate electrode GE may overlap a region corresponding to a channel.

[0173] The gate electrode GE and the lower electrode LE may be formed of a metal. For example, the gate electrode GE may be formed of at least one of a metal such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium, and copper (Cu), and an alloy thereof. The gate electrode GE may be formed of a single layer, but is not limited thereto. In an embodiment, the gate electrode GE may be formed of a plurality of layers in which two or more metal or metal alloy layers are stacked.

[0174] The second gate insulating layer GI2 may cover the gate electrode GE and the lower electrode LE. The second gate insulating layer GI2 may be an inorganic insulating layer formed of an inorganic material. The inorganic material may include polysiloxane, silicon nitride, silicon oxide, or silicon oxynitride.

[0175] The upper electrode UE of the capacitor Cst may be positioned on the second gate insulating layer GI2. The upper electrode UE of the capacitor Cst may be formed of a metal. For example, the upper electrode UE may be formed of at least one of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium, copper (Cu), and alloys thereof. The upper electrode UE may be formed of a single layer, but is not limited thereto. In an embodiment, the upper electrode UE may be formed of a plurality of layers in which two or more metal layers or metal alloy layers are stacked.

[0176] The lower electrode LE and the upper electrode UE may construct a capacitor Cst, and the second gate insulating layer GI2 is interposed between the lower electrode LE and the upper electrode UE. Fig.15 , the capacitor Cst is shown as a two-layer electrode structure of a lower electrode LE and an upper electrode UE. However, the present invention is not limited thereto. In an embodiment, the capacitor Cst may be constructed with a three-layer electrode structure using an active layer ACT, a three-layer electrode structure using an electrode of the same layer as the first connection pattern CNP1, or an electrode structure of four or more layers.

[0177] The interlayer insulating layer ILD may cover the upper electrode UE. The interlayer insulating layer ILD may be an inorganic insulating layer formed of an inorganic material. The inorganic material may include polysiloxane, silicon nitride, silicon oxide, or silicon oxynitride.

[0178] In the present embodiment, for ease of description, the first gate insulating layer GI1, the second gate insulating layer GI2 and the interlayer insulating layer ILD may be referred to as a first insulating layer group ING1. The first insulating layer group ING1 may cover a portion of the transistor. According to an embodiment, the first insulating layer group ING1 may further include a buffer layer BF.

[0179] The first connection pattern CNP1 may be positioned on the interlayer insulating layer ILD. The first connection pattern CNP1 may contact one of the source electrode and the drain electrode of the active layer ACT through a contact hole passing through the interlayer insulating layer ILD, the second gate insulating layer GI2, and the first gate insulating layer GI1.

[0180] The first connection pattern CNP1 may be formed of metal. For example, the source electrode and the drain electrode may be formed of at least one of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium, copper (Cu), and alloys thereof.

[0181] Although not shown, according to an embodiment, a passivation layer may cover the first connection pattern CNP1. The passivation layer may be an inorganic insulating layer formed of an inorganic material. The inorganic material may include polysiloxane, silicon nitride, silicon oxide, or silicon oxynitride.

[0182] The first via layer VIA1 may cover the passivation layer or the transistor. The first via layer VIA1 may be an organic insulating layer formed of an organic material. The organic material may include an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorocarbon compound (such as Teflon), and a benzocyclobutene compound. The organic insulating layer may be deposited by a method such as evaporation.

[0183] The second connection pattern CNP2 may be connected to the first connection pattern CNP1 through the opening of the first via layer VIA1. The second connection pattern CNP2 may be formed of at least one of a metal such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium, copper (Cu), and alloys thereof.

[0184] The second via layer VIA2 may cover the first via layer VIA1 and the second connection pattern CNP2. The second via layer VIA2 may be an organic insulating layer formed of an organic material. The organic material may include an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorocarbon compound (such as Teflon), or a benzocyclobutene compound.

[0185] The first light emitting element electrode LDE1 may be connected to the second connection pattern CNP2 through the opening of the second via layer VIA2. The first light emitting element electrode LDE1 may be an anode of the light emitting element LD according to the embodiment.

[0186] According to an embodiment, the configuration of the second via layer VIA2 and the second connection pattern CNP2 may be omitted, and the first light emitting element electrode LDE1 may be directly connected to the first connection pattern CNP1 through the opening of the first via layer VIA1 .

[0187] The first light emitting element electrode LDE1 may include a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and alloys thereof, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO), or may be formed of a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and alloys thereof, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO). The first light emitting element electrode LDE1 may be formed of one type of metal, but is not limited thereto, and may be formed of two or more types of metals (e.g., an alloy of Ag and Mg).

[0188] When an image is to be provided in a downward direction of the substrate SUB, the first light emitting element electrode LDE1 may be formed of a transparent conductive layer, and when an image is provided in an upward direction of the substrate SUB, the first light emitting element electrode LDE1 may be formed of a metal reflective layer and / or a transparent conductive layer.

[0189] A pixel defining layer PDL for dividing the emission area of ​​each pixel PX is disposed on the substrate SUB on which the first light emitting element electrode LDE1 is formed. The pixel defining layer PDL may be an organic insulating layer formed of an organic material. The organic material may include an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorocarbon compound (such as Teflon), or a benzocyclobutene compound.

[0190] The pixel defining layer PDL may expose the upper surface of the first light emitting element electrode LDE1 and may protrude from the substrate SUB along the periphery of the pixel PX. The light emitting layer EML may be disposed in a region of the pixel PX surrounded by the pixel defining layer PDL.

[0191] The light emitting layer EML may include a low molecular weight material (ie, a low molecular weight material) or a high molecular weight material (ie, a high molecular weight material). Examples of the low molecular weight material may include copper phthalocyanine (CuPc), N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB), or tris-8-hydroxyquinoline aluminum (Alq 3 ). These materials may be formed by a vacuum deposition method. Examples of the polymer material may include PEDOT, polyphenylene vinylene (PPV), or polyfluorene.

[0192] The light emitting layer EML may be provided as a single layer, but may be provided as a multilayer including various functional layers. When the light emitting layer EML is provided as a multilayer, the light emitting layer EML may have a structure in which a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), or an electron injection layer (EIL) is stacked in a single layer structure or a composite structure. The light emitting layer EML may be formed by a screen printing method, an inkjet printing method, or a laser induced thermal imaging (LITI) method.

[0193] According to an embodiment, at least a portion of the light emitting layer EML may be integrally formed over the plurality of first light emitting element electrodes LDE1 , and may also be individually provided to correspond to the plurality of first light emitting element electrodes LDE1 , respectively.

[0194] The second light emitting element electrode LDE2 may be disposed on the light emitting layer EML. The second light emitting element electrode LDE2 may be disposed for each pixel PX, but may be disposed to cover most of the display area DA, and may be shared by a plurality of pixels PX.

[0195] According to the embodiment, the second light emitting element electrode LDE2 may be used as a cathode or an anode. When the first light emitting element electrode LDE1 is an anode, the second light emitting element electrode LDE2 may be used as a cathode. When the first light emitting element electrode LDE1 is a cathode, the second light emitting element electrode LDE2 may be used as an anode.

[0196] The second light emitting element electrode LDE2 may be formed of a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and / or a transparent conductive layer such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO). In the disclosed embodiment, the second light emitting element electrode LDE2 may be formed of a multilayer including two or more layers of a metal thin film, and for example, the second light emitting element electrode LDE2 may be formed of a triple layer of ITO / Ag / ITO.

[0197] The second light emitting element electrode LDE2 may be formed of a metal reflective layer and / or a transparent conductive layer when an image is to be provided in a downward direction of the substrate SUB, and may be formed of a transparent conductive layer when an image is to be provided in an upward direction of the substrate SUB.

[0198] A group of the first light emitting element electrode LDE1 , the light emitting layer EML, and the second light emitting element electrode LDE2 may be referred to as a light emitting element.

[0199] The encapsulation layer TFE may be disposed on the second light emitting element electrode LDE2. The encapsulation layer TFE may be formed of a single layer, but may also be formed of multiple layers. In the present embodiment, the encapsulation layer TFE may be formed of first to third encapsulation layers ENC1, ENC2, and ENC3. The first to third encapsulation layers ENC1, ENC2, and ENC3 may be formed of organic materials and / or inorganic materials. The third encapsulation layer ENC3 (or the uppermost layer of the first to third encapsulation layers ENC1 to ENC3) positioned at the outermost periphery may be formed of an inorganic material. For example, the first encapsulation layer ENC1 may be an inorganic layer formed of an inorganic material, the second encapsulation layer ENC2 may be an organic layer formed of an organic material, and the third encapsulation layer ENC3 may be an inorganic layer formed of an inorganic material. The penetration of moisture or oxygen into an inorganic material is weaker than the penetration of moisture or oxygen into an organic material. However, since the elasticity or flexibility of the inorganic material is low, the inorganic material is prone to cracks. The expansion of cracks can be prevented by forming the first encapsulation layer ENC1 and the third encapsulation layer ENC3 using an inorganic material and forming the second encapsulation layer ENC2 using an organic material. Here, the layer formed of the organic material (i.e., the second encapsulation layer ENC2) can be completely covered by the third encapsulation layer ENC3 so that the end of the second encapsulation layer ENC2 is not exposed to the outside. The organic material may include an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorocarbon compound (such as Teflon), or a benzocyclobutene compound. The inorganic material may include polysiloxane, silicon nitride, silicon oxide, or silicon oxynitride.

[0200] The light-emitting layer EML forming the light-emitting element may be easily damaged by moisture or oxygen from the outside. The encapsulation layer TFE may protect the light-emitting element by covering the light-emitting layer EML. The encapsulation layer TFE may cover the display area DA and may extend to the non-display area NDA outside the display area DA. The insulating layer formed by the organic material may be flexible or elastic, but moisture and oxygen may easily penetrate compared to the insulating layer formed by the inorganic material. In order to prevent moisture or oxygen from penetrating the insulating layer formed by the organic material, the end of the insulating layer formed by the organic material may be covered by the insulating layer formed by the inorganic material so that the end of the organic insulating layer is not exposed to the outside. For example, the first via layer VIA1, the second via layer VIA2, and the pixel defining layer PDL formed by the organic material may extend discontinuously to the non-display area NDA and may be covered by the first encapsulation layer ENC1. Therefore, the encapsulation layer TFE including the inorganic material may seal the upper surface of the pixel defining layer PDL and the sides of the first via layer VIA1, the second via layer VIA2, and the pixel defining layer PDL to prevent them from being exposed to the outside.

[0201] However, although the encapsulation layer TFE is formed of a plurality of layers, the material of the encapsulation layer TFE is not limited thereto and may be variously changed. For example, the encapsulation layer TFE may include a plurality of organic material layers and a plurality of inorganic material layers alternately stacked.

[0202] The first sensing electrode layer ISM1 may be positioned on the encapsulation layer TFE. According to an embodiment, an additional buffer layer may be positioned between the first sensing electrode layer ISM1 and the encapsulation layer TFE. The first sensing electrode layer ISM1 may be formed of a metal layer such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, or Cr and / or a transparent conductive layer such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO).

[0203] The first sensing insulating layer ISI1 may exist on the first sensing electrode layer ISM1. The first sensing insulating layer ISI1 may be an inorganic insulating layer formed of an inorganic material. As the inorganic material, an inorganic insulating material such as polysiloxane, silicon nitride, silicon oxide, silicon oxynitride, etc. may be used.

[0204] The second sensing electrode layer ISM2 may be present on the first sensing insulating layer ISI1. The second sensing electrode layer ISM2 may be formed of a metal layer such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, or Cr and / or a transparent conductive layer such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO).

[0205] Will refer to later Figures 17 to 19Configurations of various input sensors using the first sensing electrode layer ISM1 , the first sensing insulating layer ISI1 , and the second sensing electrode layer ISM2 are described.

[0206] exist Fig.15 In the embodiment of FIG. 5 , the second sensing electrode layer ISM2 may be patterned to configure the first pattern IST1 a of the first sensing line IST1 .

[0207] The second sensing insulating layer ISI2 may be positioned on the second sensing electrode layer ISM2. The second sensing insulating layer ISI2 may be constructed of an organic layer. For example, an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorocarbon compound (such as Teflon), or a benzocyclobutene compound may be used as the organic material. For example, the second sensing insulating layer ISI2 may be formed of polymethyl methacrylate, polydimethylsiloxane, polyimide, acrylate, polyethylene terephthalate, polyethylene naphthalate, etc.

[0208] Next, the non-display area NDA, the first additional area ADA1, and the second additional area ADA2 are described. Since the difference between the non-display area NDA and the first additional area ADA1 is not Fig.15 Therefore, the non-display area NDA and the first additional area ADA1 will not be described separately. Hereinafter, when describing the non-display area NDA and the second additional area ADA2, in order to avoid repeated description, the previously described contents are omitted or briefly described.

[0209] The dam DAM may be positioned at the boundary of the second encapsulation layer ENC2. For example, the dam DAM may be positioned between the planarization layer FLT and the second encapsulation layer ENC2. The dam DAM may be a multilayer structure and may include, for example, a first dam DAM1 and a second dam DAM2. For example, the first dam DAM1 and the second dam DAM2 may be formed of an organic material. Each of the first dam DAM1 and the second dam DAM2 may correspond to one of the first via layer VIA1, the second via layer VIA2, and the pixel defining layer PDL. For example, when the first dam DAM1 and the first via layer VIA1 are formed of the same material by the same process, the second dam DAM2 may be formed of the same material by the same process as the second via layer VIA2 or the pixel defining layer PDL. In another example, when the first dam DAM1 and the second via layer VIA2 are formed of the same material by the same process, the second dam DAM2 may be formed of the same material by the same process as the pixel defining layer PDL. In addition, when the spacer is formed on the pixel defining layer PDL of the display area DA, the dam DAM may also be formed using the same material as the spacer.

[0210] The dam DAM prevents the organic material of the second encapsulation layer ENC2 having high fluidity from overflowing outside the dam DAM during the process. The first and third encapsulation layers ENC1 and ENC3 formed of an inorganic material may cover the dam DAM and extend, thus increasing adhesion with the substrate SUB or other layers thereon.

[0211] The first pad PDE1 may be positioned on the substrate SUB and may be spaced apart from the planarization layer FLT. The first pad PDE1 may be supported by the second insulation layer group ING2. The insulation layers of the second insulation layer group ING2 may correspond to the insulation layers of the first insulation layer group ING1, respectively. The first pad PDE1 may include a first pad electrode PDE1a and a second pad electrode PDE1b. The first pad electrode PDE1a may be formed of the same material as the first connection pattern CNP1. The second pad electrode PDE1b may be formed of the same material as the second connection pattern CNP2.

[0212] The planarization layer FLT may be positioned on the substrate SUB and may be spaced apart from the area covered by the encapsulation layer TFE. The planarization layer FLT may be an organic insulating layer formed of an organic material. As the organic material, an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorocarbon compound (such as Teflon), a benzocyclobutene compound, etc. may be used.

[0213] In this embodiment, after forming the interlayer insulating layer ILD, the planarization layer FLT may be formed before forming the first connection pattern CNP1. Therefore, the planarization layer FLT and the first via layer VIA1 may be formed by different processes. According to an embodiment, the planarization layer FLT and the first via layer VIA1 may include different organic materials.

[0214] One end of the planarization layer FLT may cover the first insulation layer group ING1. In addition, a portion of the planarization layer FLT corresponding to the second bending area BA2 may fill the first trench TCH1 between the first insulation layer group ING1 and the second insulation layer group ING2.

[0215] Since the inorganic insulating layer has higher rigidity than the organic insulating layer and lower flexibility than the organic insulating layer, the probability of cracks is relatively high. When cracks occur in the inorganic insulating layer, the cracks propagate to the wires on the inorganic insulating layer, eventually causing defects such as wire disconnection.

[0216] Therefore, if Fig.15As shown in FIG. 1 , the first trench TCH1 may be formed by removing the inorganic insulating layer from the second bending area BA2, and the first insulating layer group ING1 and the second insulating layer group ING2 may be distinguished. In the present embodiment, all of the inorganic insulating layer corresponding to the area of ​​the first trench TCH1 is removed, but in another embodiment, some of the inorganic insulating layer may remain. In this case, some of the remaining inorganic insulating layer may include slits to disperse the bending stress.

[0217] The second pattern IST1b of the first sensing line IST1 may extend on the planarization layer FLT and may be electrically connected to the first pad PDE1. In the present embodiment, the second pattern IST1b may be formed of the same material as the first connection pattern CNP1 through the same process.

[0218] The first line protection layer LPL1 may cover the planarization layer FLT and the second pattern IST1b. In addition, the second line protection layer LPL2 may cover the first line protection layer LPL1. According to an embodiment, the construction of the second line protection layer LPL2 may be omitted. The first line protection layer LPL1 and the second line protection layer LPL2 may be formed of an organic material. Each of the first line protection layer LPL1 and the second line protection layer LPL2 may correspond to any one of the first via layer VIA1, the second via layer VIA2, and the pixel defining layer PDL. For example, when the first line protection layer LPL1 and the first via layer VIA1 are formed of the same material by the same process, the second line protection layer LPL2 may be formed of the same material by the same process as the second via layer VIA2 or the pixel defining layer PDL. In another example, when the first line protection layer LPL1 and the second via layer VIA2 are formed of the same material by the same process, the second line protection layer LPL2 may be formed of the same material by the same process as the pixel defining layer PDL.

[0219] The first and second line protection layers LPL1 and LPL2 and the first sensing insulating layer ISI1 may include first openings OPN1 exposing the second patterns IST1 b .

[0220] The first pattern IST1a may be connected to the second pattern IST1b through the first opening OPN1. According to the present embodiment, the second pattern IST1b positioned on one end of the first insulating layer group ING1 and the planarization layer FLT may have a height greater than that of the second pattern IST1b positioned on the planarization layer FLT corresponding to the first trench TCH1.

[0221] Therefore, the first pattern IST1a and the second pattern IST1b can be directly connected to each other without another bridge line. Since there is no bridge line, the connection reliability between the first pattern IST1a and the second pattern IST1b is improved. In addition, since the length of the non-display area NDA can be reduced due to the length of the bridge line, the dead zone is reduced and a thin frame is easily achieved.

[0222] The third pattern IST1c of the first sensing line IST1 may connect the first pad PDE1 and the second pattern IST1b to each other. The third pattern IST1c may be formed of the same material as the gate electrode GE of the transistor through the same process. According to an embodiment, the third pattern IST1c may be formed of the same material as the upper electrode UE through the same process. According to an embodiment, the odd-numbered third pattern IST1c may be formed of the same material as the gate electrode GE of the transistor through the same process, and the even-numbered third pattern IST1c may be formed of the same material as the upper electrode UE through the same process. On the contrary, the even-numbered third pattern IST1c may be formed of the same material as the gate electrode GE of the transistor through the same process, and the odd-numbered third pattern IST1c may be formed of the same material as the upper electrode UE through the same process. Therefore, the short circuit problem between adjacent lines can be more effectively prevented.

[0223] The second insulating layer group ING2 may include second openings OPN2 exposing the third pattern IST1c. In addition, the planarization layer FLT may include openings corresponding to the second openings OPN2. The second pattern IST1b may be connected to the third pattern IST1c through the second openings OPN2.

[0224] Fig.16 It is along Fig.14 An embodiment of a cross section taken along line II-II'.

[0225] Fig.14 The line II-II' may correspond to the first bending axis BX1. However, the same embodiment may be applied to the second side RC2 in addition to the first side RC1.

[0226] The display line DST may be constructed by a single-layer line or a multi-layer line using at least one of the lines G1L, G2L, and SDL. The line G1L may be formed of the same material as the gate electrode GE through the same process. The line G2L may be formed of the same material as the upper electrode UE through the same process. The line SDL may be formed of the same material as the first connection pattern CNP1 through the same process.

[0227] Patterns IST1a and IST12a of sensing lines IST1 and IST2 may be positioned on the encapsulation layer TFE and the first sensing insulating layer ISI1 (in the third direction DR3 ) and may be positioned between the dam DAM and the display area DA (in the second direction DR2 ). The first sensing insulating layer ISI1 may be positioned between the encapsulation layer TFE and the sensing lines IST1 and IST2 .

[0228] Fig.17 and Fig.18 is a diagram illustrating sensing electrodes and bridging electrodes according to a disclosed embodiment. Fig.18 It is along Fig.17 A cross-sectional view taken along line III-III'.

[0229] By patterning the first sensing electrode layer ISM1 , the bridge electrode CP1 may be positioned on the encapsulation layer TFE.

[0230] The first sensing insulating layer ISI1 may cover the bridge electrode CP1 and may include a contact hole CNT exposing a portion of the bridge electrode CP1 .

[0231] By patterning the second sensing electrode layer ISM2, the first sensing electrode SC1 and the second sensing electrode SC2 may be formed on the first sensing insulating layer ISI1. The first sensing electrode SC1 may be connected to the bridge electrode CP1 through the contact hole CNT.

[0232] By patterning the second sensing electrode layer ISM2, the second sensing electrode SC2 may be in the same layer as the connection pattern CP2. Therefore, when connecting the second sensing electrode SC2, a separate bridge electrode may not be required.

[0233] According to an embodiment, each of the sensing electrodes SC1 and SC2 may cover a plurality of pixels PX. At this time, when each of the sensing electrodes SC1 and SC2 is constructed by an opaque conductive layer, each of the sensing electrodes SC1 and SC2 may include a plurality of openings capable of exposing the covered plurality of pixels PX. For example, each of the sensing electrodes SC1 and SC2 may be constructed in a grid shape. When each of the sensing electrodes SC1 and SC2 is constructed by a transparent conductive layer, each of the sensing electrodes SC1 and SC2 may be constructed in a plate shape that does not include an opening.

[0234] Fig.19 is a diagram illustrating sensing electrodes and bridge electrodes according to another disclosed embodiment.

[0235] Fig.19 It is along Fig.17 Another cross-sectional view taken along line III-III'.

[0236] By patterning the first sensing electrode layer ISM1 , the first sensing electrode SC1 and the second sensing electrode SC2 may be formed on the encapsulation layer TFE.

[0237] The first sensing insulating layer ISI1 may cover the first and second sensing electrodes SC1 and SC2 , and may include a contact hole CNT exposing a portion of the first sensing electrode SC1 .

[0238] By patterning the second sensing electrode layer ISM2, the bridge electrode CP1 may be positioned on the first sensing insulating layer ISI1. The bridge electrode CP1 may be connected to the first sensing electrode SC1 through the contact hole CNT.

[0239] The drawings mentioned so far and the detailed description of the disclosure described herein are merely examples of the disclosure and are only used to describe the disclosure and are not intended to limit the meaning and scope of the disclosure described in the claims. Therefore, it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Therefore, the true scope of the disclosure should be determined by the technical spirit of the appended claims.

Claims

1. A sensor device, comprising: A sensor unit including a plurality of first sensor electrodes and a plurality of second sensor electrodes, wherein the plurality of first sensor electrodes and the plurality of second sensor electrodes are configured to form a plurality of capacitors at a plurality of intersections of the plurality of first sensor electrodes and the plurality of second sensor electrodes; and a sensor driver configured to send a plurality of driving signals to the plurality of first sensor electrodes and receive a plurality of sensing signals from the plurality of second sensor electrodes, Wherein, the sensor unit includes a plurality of sensing areas, The number of the plurality of sensing areas is NA, and NA is an integer greater than 2. Wherein, the sensor driver is constructed as follows: sensing each of the plurality of sensing areas once in a time-division manner during a first sensing frame period, wherein the first sensing frame period includes a plurality of first sensing time periods, and the number of the plurality of first sensing time periods is equal to the number of the plurality of sensing areas; time-divisionally sensing each of the plurality of sensing areas once during a second sensing frame period including a plurality of second sensing periods, wherein the number of the plurality of second sensing periods is equal to the number of the plurality of sensing areas; and An initial sensing area among the plurality of sensing areas to be sensed during an initial second sensing period of the second sensing frame period is set to be different from a final sensing area among the plurality of sensing areas to be sensed during a final first sensing period of the first sensing frame period.

2. The sensor device according to claim 1, in, An order in which each of the plurality of sensing areas is randomly sensed during the first sensing frame period is different from an order in which each of the plurality of sensing areas is randomly sensed during the second sensing frame period.

3. The sensor device according to claim 1, in, The plurality of first sensor electrodes are grouped into the plurality of sensing regions, and The plurality of sensing regions all have the same number of first sensor electrodes.

4. The sensor device according to claim 3, in, The plurality of sensing regions share the plurality of second sensor electrodes.

5. The sensor device according to claim 1, in, The sensor driver is constructed as follows: During an initial first sensing period among the plurality of first sensing periods of the first sensing frame period, one sensing area among the plurality of sensing areas is selected and sensed with a probability of (1 / NA).

6. The sensor device according to claim 5, in, The sensor driver is constructed as follows: During a next first sensing period immediately after the initial first sensing period among the plurality of first sensing periods of the first sensing frame period, one sensing area among (NA-1) other sensing areas among the plurality of sensing areas is selected and sensed with a probability of 1 / (NA-1), and The (NA-1) other sensing areas do not include the one sensing area among the plurality of sensing areas sensed during the initial first sensing period of the first sensing frame cycle.

7. The sensor device according to claim 6, in, The sensor driver is constructed as follows: During a third first sensing period immediately after the next first sensing period among the plurality of first sensing periods of the first sensing frame period, one sensing area among (NA-2) other sensing areas among the plurality of sensing areas is selected and sensed with a probability of 1 / (NA-2), and Among them, the (NA-2) other sensing areas do not include the one sensing area among the multiple sensing areas sensed during the initial first sensing period of the first sensing frame cycle and the one sensing area among the (NA-1) other sensing areas sensed during the next first sensing period of the first sensing frame cycle.

8. The sensor device according to claim 5, in, The sensor driver is constructed as follows: During an initial second sensing period of the second sensing frame period, the initial sensing area among the first (NA-1) sensing areas is selected and sensed with a probability of 1 / (NA-1), and The first (NA-1) sensing areas do not include the last sensing area sensed during the last first sensing period of the first sensing frame cycle.

9. The sensor device according to claim 8, in, The sensor driver is constructed as follows: During a next second sensing period of the second sensing frame period immediately after the initial second sensing period, one of the second (NA-1) sensing areas is selected and sensed with a probability of 1 / (NA-1), and The second (NA-1) sensing area includes the final sensing area and does not include the initial sensing area in the first (NA-1) sensing area.

10. The sensor device according to claim 9, in, The sensor driver is constructed as follows: During a third second sensing period of the second sensing frame period immediately after the next second sensing period, one of the (NA-2) sensing areas is selected and sensed with a probability of 1 / (NA-2), and The (NA-2) sensing areas do not include the initial sensing area and the one sensing area among the second (NA-1) sensing areas.

Images