Semiconductor device assembly and production method thereof

Abstract

The invention relates to a semiconductor device assembly and a production method thereof. In a general aspect, a semiconductor device assembly includes a metal chamber configured to transfer thermal energy from a first surface of the metal chamber to a second surface of the metal chamber opposite the first surface; a thermally conductive polymer layer disposed on the first surface of the metal chamber; a patterned metal layer disposed on the thermally conductive polymer layer; and at least one semiconductor die disposed on the patterned metal layer.

Description

Technical Field

[0001] The present invention relates to a semiconductor device assembly and more particularly to a semiconductor device assembly (eg, a semiconductor device module) having improved heat dissipation performance. Background Art

[0002] Semiconductor device assemblies, such as assemblies including power semiconductor devices (which may be referred to as power modules, multi-chip power modules, etc.), may be implemented using semiconductor die, substrates (e.g., directly bonded metal substrates, ceramic substrates, etc.), wire bonds, etc. Such semiconductor device assemblies may be coupled with heat dissipation mechanisms, appliances, equipment, devices, etc. (e.g., heat sinks, water jackets, etc.) that may dissipate heat generated during operation of the included semiconductor devices (die). Summary of the invention

[0003] In a general aspect, a semiconductor device assembly includes: a metal chamber configured to transfer thermal energy from a first surface of the metal chamber to a second surface of the metal chamber opposite the first surface; a thermally conductive polymer layer disposed on the first surface of the metal chamber; a patterned metal layer disposed on the thermally conductive polymer layer; and at least one semiconductor die disposed on the patterned metal layer.

[0004] Implementations may include one or more of the following features, alone or in combination. For example, the thermally conductive polymer layer may include a cured polymer resin and thermally conductive nanoparticles. The thermally conductive nanoparticles may include ceramic nanoparticles. The thermally conductive nanoparticles include graphite nanoparticles.

[0005] The metal chamber may include a vacuum chamber and an evaporative cooling heat pipe disposed in the vacuum chamber.

[0006] The first surface of the metal chamber may be arranged in a plane. The evaporative cooling heat pipe may be arranged along a longitudinal axis parallel to the plane.

[0007] The evaporative cooling heat dissipation pipe may be a first evaporative cooling heat dissipation pipe. The metal chamber may include a second evaporative cooling heat dissipation pipe. The first evaporative cooling heat dissipation pipe may be arranged along a first longitudinal axis orthogonal to a plane of a first surface of the metal chamber, and the second evaporative cooling heat dissipation pipe may be arranged along a second longitudinal axis parallel to the first longitudinal axis.

[0008] The semiconductor device assembly may include a fluid cooling jacket disposed on the second surface of the metal chamber.

[0009] In another general aspect, a semiconductor device assembly includes a first metal chamber configured to transfer thermal energy from a first surface of the first metal chamber to a second surface of the first metal chamber opposite the first surface. The assembly also includes a second metal chamber configured to transfer thermal energy from the first surface of the second metal chamber to a second surface of the second metal chamber opposite the first surface. The assembly also includes a first thermally conductive polymer layer disposed on the first surface of the first metal chamber, a second thermally conductive polymer layer disposed on the first surface of the second metal chamber, a first patterned metal layer disposed on the first thermally conductive polymer layer, and a second patterned metal layer disposed on the second thermally conductive polymer layer. The assembly also includes a first semiconductor die disposed on the first patterned metal layer, a second semiconductor die disposed on the second patterned metal layer, a first conductive spacer disposed on the first patterned metal layer and electrically coupled to the second semiconductor die, and a second conductive spacer disposed on the second patterned metal layer and electrically coupled to the first semiconductor die.

[0010] Implementations may include one or more of the following features, alone or in combination. For example, the first thermally conductive polymer layer and the second thermally conductive polymer layer may include a cured polymer resin and thermally conductive nanoparticles. The thermally conductive nanoparticles may include at least one of ceramic nanoparticles or graphite nanoparticles.

[0011] The first metal chamber may include a first vacuum chamber and a first evaporative cooling heat dissipation pipe disposed in the first vacuum chamber. The second metal chamber may include a second vacuum chamber and a second evaporative cooling heat dissipation pipe disposed in the second vacuum chamber.

[0012] The first surface of the first metal chamber may be arranged in a plane. The first evaporative cooling heat dissipation pipe may be arranged along a first longitudinal axis parallel to the plane, and the second evaporative cooling heat dissipation pipe may be arranged along a second longitudinal axis parallel to the plane. The first evaporative cooling heat dissipation pipe may be arranged along a first longitudinal axis orthogonal to the plane, and the second evaporative cooling heat dissipation pipe may be arranged along a second longitudinal axis orthogonal to the plane.

[0013] The first metal chamber may further include a third evaporative cooling heat pipe disposed in the first vacuum chamber; and

[0014] The second metal chamber may include a fourth evaporative cooling heat dissipation tube disposed in the second vacuum chamber. The first evaporative cooling heat dissipation tube, the second evaporative cooling heat dissipation tube, the third evaporative cooling heat dissipation tube, and the fourth evaporative cooling heat dissipation tube are arranged along respective longitudinal axes parallel to each other. The first surface of the first metal chamber may be arranged in a plane, and the respective longitudinal axis may be orthogonal to the plane of the first metal chamber.

[0015] The assembly may include a first fluid cooling jacket disposed on a second surface of a first metal chamber, and a second fluid cooling jacket disposed on a second surface of a second metal chamber.

[0016] In another general aspect, a method for producing a semiconductor device assembly includes: forming (e.g., printing) a layer of a thermally conductive polymer resin on a surface of a metal chamber including an evaporative cooling heat pipe; and providing a metal layer on the layer of the thermally conductive polymer resin. The method also includes curing the layer of the thermally conductive polymer resin. The method also includes, after curing the layer of the thermally conductive polymer resin, producing a semiconductor device circuit on the metal layer.

[0017] Implementations may include one or more of the following features, alone or in combination. For example, producing semiconductor device circuitry may include patterning a metal layer to produce a patterned metal layer, coupling at least one semiconductor die to the patterned metal layer, and forming electrical connections for the semiconductor device circuitry.

[0018] Curing the layer of thermally conductive polymer resin may adhere the metal layer to the layer of thermally conductive polymer resin. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a block diagram schematically illustrating a side view of an exemplary semiconductor device assembly.

[0020] Figure 2A and Figure 2B is a diagram showing a side view of an exemplary semiconductor device assembly.

[0021] Figure 3A is a diagram illustrating a side view of another exemplary semiconductor device assembly.

[0022] Figure 3B It is shown Figure 3A Illustration of a portion of a semiconductor component.

[0023] Figure 4 is a diagram showing a side view of yet another exemplary semiconductor device assembly.

[0024] Figure 5 is a diagram showing a side view of yet another exemplary semiconductor device assembly.

[0025] Figure 6 is shown for producing Figure 1 , Figure 2A and Figure 2B , Figure 3A , Figure 4 and Figure 5 A flowchart of an exemplary method of assembling a semiconductor device such as an assembly of an assembly.

[0026] In the drawings that are not necessarily drawn to scale, similar reference symbols may indicate similar and / or similar parts (elements, structures, etc.) in different views. The drawings generally illustrate various embodiments discussed in the present disclosure by way of example and not limitation. Reference symbols shown in one drawing may not be repeated for the same and / or similar elements in the related views. Reference symbols repeated in multiple figures may not be specifically discussed with respect to each of the figures in these figures, but are provided for context between the related views. In addition, not all similar elements in the drawings are specifically referenced with reference symbols when multiple instances of the element are shown. DETAILED DESCRIPTION

[0027] The present disclosure relates to embodiments of electronic device assemblies, such as power semiconductor device assemblies, such as directly cooled multi-chip modules (MCMs). Such assemblies may be used, for example, in automotive applications, industrial applications, etc. For example, the embodiments described herein may be implemented in high power modules such as power converters, ignition circuits, power transistor pairs, and the like.

[0028] In previous embodiments, semiconductor device assemblies are coupled to corresponding heat sinks using thermal interface materials (TIMs). However, such approaches have certain disadvantages. For example, the thermal resistance of the material (e.g., thermal grease) used for the TIM may be relatively high (e.g., compared to the thermal resistance of the associated heat sink), which may increase the thermal resistance and reduce the overall cooling efficiency (e.g., heat dissipation efficiency) of such embodiments. In other previous embodiments, substrates such as direct bonded metal substrates may be coupled to heat sinks using cladding or brazing processes. Such processes are performed at temperatures exceeding 1000 degrees Celsius, which may damage the substrate or other elements of the associated assembly.

[0029] In embodiments described herein, a heat conducting polymer compound is formed on a heat dissipation device such as a metal chamber including one or more evaporative cooling heat pipes. The heat conducting polymer layer may include a cured polymer resin mixed (infiltrated, blended, composited, etc.) with heat conducting nanoparticles. Such nanoparticles may include boron nitride, aluminum nitride, aluminum oxide, other ceramics and / or oxide materials, graphite, graphene, etc. In embodiments using graphite and / or graphene, graphite / graphene is functionalized so as to be chemically bonded to a polymer used as a carrier material (for graphite / graphene, ceramics or other materials). Such functionalization of graphite / graphene makes it electrically insulating, rather than conductive.

[0030] A patterned metal layer is disposed on (adhered to) the thermally conductive polymer layer. A semiconductor circuit is formed on the patterned metal layer (and the thermally conductive polymer layer). Therefore, in the embodiments described herein, a ceramic substrate and an associated thermal interface material (TIM) for coupling the substrate to a heat dissipation device may be omitted. Such embodiments may improve heat dissipation efficiency because the thermal conductivity of the thermally conductive polymer layer may be greater than 300 watts per meter per Kelvin (W / mK) compared to, for example, a thermally conductive grease TIM having a thermal conductivity of 35 W / mK or less.

[0031] In addition, the methods described herein reduce high temperature processing during assembly of electronic device components and thus can reduce or eliminate associated damage. For example, the thermally conductive polymer layer can be cured at a temperature of 200 to 500 degrees Celsius (°C), compared to prior embodiments where a ceramic substrate can be coupled to a heat sink using a cladding or brazing process performed at 1000°C or higher.

[0032] Figure 1 1 is a block diagram schematically illustrating a side view of an exemplary semiconductor device assembly (assembly 100). Figure 1 As shown, the assembly 100 includes a vacuum chamber heat pipe 110, which serves as a heat dissipation device for the assembly 100. The structure of the vacuum chamber heat pipe 110 will depend on the specific implementation. For example, in some embodiments, the vacuum chamber heat pipe 110 can be a metal vacuum chamber (e.g., copper, aluminum copper, etc.) including one or more evaporative cooling pipes. The vacuum chamber heat pipe 110 is configured, for example, with Figure 1 The orientation shown transfers heat from the top surface to the bottom surface of the vacuum chamber heat pipe 110. In other words, the vacuum chamber heat pipe 110, during operation of the semiconductor device circuit disposed on the vacuum chamber heat pipe 110, heat generated by the circuit is transferred from a surface including the circuit to an opposite surface.

[0033] like Figure 1As shown, the component 100 also includes a thermally conductive polymer compound 120 (thermally conductive polymer layer), a patterned metal layer 130, a semiconductor die 140, and a spacer 150. As described herein, the thermally conductive polymer compound 120 may include a cured polymer resin mixed with thermally conductive nanoparticles. The thermally conductive nanoparticles may include ceramics, oxides, functionalized graphite / graphene, etc. For example, an uncured (e.g., viscous) polymer resin and nanoparticle mixture may be applied to the vacuum chamber heat pipe 110 using a printing process. The patterned metal layer 130 may be pre-patterned, or may be patterned in situ. If the patterned metal layer 130 is pre-patterned, the thermally conductive polymer compound 120 may be cured after the patterned metal layer 130 is applied. If the patterned metal layer 130 is patterned in situ, a metal layer (e.g., a sheet, etc.) may be applied to the uncured resin mixture, a curing process may be performed, and then the applied metal layer may be patterned.

[0034] like Figure 1 As shown, semiconductor die 140 and spacer 150 are disposed on patterned metal layer 130. In some embodiments, semiconductor die 140 and spacer 150 may be soldered to patterned metal layer 130. In some embodiments, a semiconductor device assembly may include multiple semiconductor dies and / or multiple spacers. In some embodiments, spacer 150 may be omitted, such as in Figure 2A , Figure 2B and Figure 4 In an exemplary embodiment of the present invention, the spacer 150 may be a conductive spacer. For example, the spacer 150 may be copper or a copper alloy, such as copper molybdenum.

[0035] Figure 2A and Figure 2B is a diagram illustrating a side view (eg, a cross-sectional side view) of an exemplary semiconductor device assembly (assembly 200). Specifically, Figure 2A A side view of the assembly 200 is shown, and Figure 2B Show Figure 2A The plug indicated in Figure 2B A magnified view of the Figure 2A and Figure 2B In an exemplary embodiment of the present invention, the component 200 includes a vacuum chamber heat pipe 210, a thermally conductive polymer layer 220, a patterned metal layer 230, a semiconductor die 240a, and a semiconductor die 240b. In this example, the semiconductor die 240a may be a power transistor, the semiconductor die 240b may be a fast recovery diode, and the component 200 may be included in a half-bridge circuit or may implement a half-bridge circuit.

[0036] like Figure 2A and Figure 2BAs shown, the thermally conductive polymer layer 220 is disposed on a surface of the vacuum chamber heat dissipation pipe 210, which is arranged in a plane P1 (aligned with the plane P1, located in the plane P1, etc.) (wherein P1 extends into and out of the page). The patterned metal layer 230 is disposed on the thermally conductive polymer layer 220, and the semiconductor die 240a and the semiconductor die 240b are disposed on the patterned metal layer 230. For example, the semiconductor die 240a and the semiconductor die 240b can be soldered to the patterned metal layer 230. Although Figure 2A and Figure 2B Although not shown, assembly 200 may also include electrical interconnects of semiconductor device circuitry implemented by at least patterned metal layer 230, semiconductor die 240a, and semiconductor die 240b. For example, such electrical connections may include one or more conductive clamps and / or one or more wire bonds. In some embodiments, assembly 200 may be encapsulated, for example, at least partially encapsulated in a molding compound such as epoxy molding compound.

[0037] In this example, the vacuum chamber heat sink 210 includes a metal chamber 212 (vacuum chamber), which may be a copper chamber, an aluminum copper chamber, etc. The vacuum chamber heat sink 210 also includes an evaporative cooling heat sink 213 disposed in the metal chamber 212. Figure 2A and Figure 2B , but in actual implementation, the evaporative cooling heat pipe 213 will not be visible because it will be disposed within the metal chamber 212. The evaporative cooling heat pipe 213 may include a wick 214 (which may be a metal mesh), a condensation section 216, and an evaporation section 218. The evaporative cooling heat pipe 213 also includes a fluid (e.g., water) that may be transported from the condensation section 216 of the evaporative cooling heat pipe 213 to the evaporation section 218 by the wick 214 (e.g., by capillary action).

[0038] During operation of the assembly 200, the fluid in the wick 214 in the evaporation section 218 can evaporate by absorbing, for example, heat generated by the operation of the semiconductor die 240a and the semiconductor die 240b, wherein the heat is absorbed via the thermally conductive polymer layer 220 and the metal chamber 212. Due to the high thermal conductivity of the thermally conductive polymer layer 220 (e.g., greater than or equal to 300 W / mK), such heat transfer can be extremely efficient compared to existing embodiments using TIMs.

[0039] The evaporated fluid moves from the evaporation section 218 to the condensation section 216 due to the vapor pressure, where it is converted back to the liquid phase and reabsorbed by the wick 214. In this example, the conversion of the fluid in the evaporative cooling heat pipe 213 from the gas phase to the liquid phase is at least partially facilitated by the fluid cooling pipe 260, which transfers heat from the gas phase fluid in the evaporative cooling heat pipe 213 to the fluid flowing in the fluid cooling pipe 260 (e.g., Figure 2A The heat is transferred via the metal chamber 212 and the housing (metal housing) of the fluid cooling pipe 260.

[0040] like Figure 2A As shown, the evaporative cooling heat pipe 213 is arranged (aligned, positioned, etc.) along the longitudinal axis L1. The longitudinal axis L1 is parallel to the plane P1 of the upper surface of the vacuum chamber heat pipe 210. The assembly 200 can be said to implement single-sided cooling because the heat transfer mechanism is not included on the top side of the assembly 200 (on the Figure 2A and Figure 2B ).

[0041] Figure 3A is a diagram illustrating a side view (eg, a cross-sectional side view) of another exemplary semiconductor device assembly (assembly 300 ). Figure 3B The components 300 are shown as Figure 3A Insert Figure 3B 20 is an isometric view of a portion of the assembly 300. In contrast to the single-sided cooling arrangement of assembly 200, assembly 300 may be described as having a double-sided cooling configuration. For example, assembly 300 includes a vacuum chamber heat pipe 310a and a vacuum chamber heat pipe 310b (which may not be visible in actual implementations). A thermally conductive polymer layer 320a, such as those described herein, is disposed on vacuum chamber heat pipe 310a, and a thermally conductive polymer layer 320b is disposed on vacuum chamber heat pipe 310b. In addition, a patterned metal layer 330a is disposed on thermally conductive polymer layer 320a, and a patterned metal layer 330b is disposed on thermally conductive polymer layer 320b.

[0042] In this example, corresponding parts (components, elements, etc.) of the semiconductor device circuit, such as semiconductor die, conductive spacers, etc., may be disposed on the patterned metal layer 330a and the patterned metal layer 330b, an example of which is shown in FIG. Figure 3B (by insert Figure 3B instructions). For example, Figure 3A Conductive spacers 350a and conductive spacers 350b are shown in FIG. In some embodiments, electrical connections of the circuits of assembly 300 may be made as appropriate (eg, using conductive clamps, wire bonding, etc.). Figure 3AThe cooling of the assembly 300 during its operation is achieved on both sides, namely the top side and the bottom side in the view of FIG. Therefore, the assembly 300 can be said to have double-sided cooling.

[0043] like Figure 3A As shown, the surfaces of the vacuum chamber heat dissipation pipe 310a and the vacuum chamber heat dissipation pipe 310b on which the thermally conductive polymer layer 320a and the thermally conductive polymer layer 320b are respectively formed are arranged (positioned in, aligned in, etc.) in corresponding planes P2 and P3, wherein the planes P2 and P3 are parallel to each other and extend into and out of the page. In addition, the vacuum chamber heat dissipation pipe 310a includes an evaporative cooling heat dissipation pipe 313a arranged along the longitudinal axis L3 (aligned along the longitudinal axis, positioned along the longitudinal axis, etc.), and the vacuum chamber heat dissipation pipe 310b includes an evaporative cooling heat dissipation pipe 313b arranged along the longitudinal axis L4 (aligned along the longitudinal axis, positioned along the longitudinal axis, etc.). The longitudinal axis L3 and the longitudinal axis L4 are parallel to (parallel to, etc.) the planes P2 and P3.

[0044] The evaporative cooling heat pipe 313a and the evaporative cooling heat pipe 313b can operate in a manner similar to the evaporative cooling heat pipe 213, as described above. For example, the vacuum chamber heat pipe 310a can dissipate heat conducted through the patterned metal layer 330a and the thermally conductive polymer layer 320a, such as Figure 3A Similarly, the vacuum chamber heat pipe 310b can dissipate heat conducted through the patterned metal layer 330b and the thermally conductive polymer layer 320b, for example, as Figure 3A Fluid cooling tubes 360a and 360b may facilitate the removal of heat transferred from assembly 300 by vacuum chamber heat dissipation tubes 310a and 310b, respectively.

[0045] Figure 3B It is shown Figure 3A As mentioned above, Figure 3B The component 300 is composed of Figure 3A Insert Figure 3B An isometric view of a portion of the indication. Figure 3B As shown, patterned metal layer 330a is disposed on thermally conductive polymer layer 320a. In addition, conductive spacers 350a and 350b are disposed on a portion of patterned metal layer 330a, while semiconductor die 340a and semiconductor die 340b are disposed on another portion of patterned metal layer 330. Figure 3B The example also includes power tab connection pads 370, 372 and 374, which can be configured to attach power connection tabs and output signal tabs (terminals, etc.)

[0046] In this example, semiconductor die 340a may be a power transistor and semiconductor die 340b may be a fast recovery diode. Complementary portions of corresponding semiconductor circuits may be formed on patterned metal layer 330b of 300. For example, patterned metal layer 330b may have a complementary arrangement of semiconductor die (which is coupled to conductive spacers 350a and 350b in component 300) and conductive spacers (which is coupled to semiconductor die 340a and semiconductor die 340b in component 300), such as a half-bridge circuit. Figure 3B As shown, patterned metal layer 330 a may also include signal contact pads 380 , which may be used to transmit signals associated with operating (and monitoring the operation of) semiconductor device circuitry implemented by assembly 300 .

[0047] Figure 4 is a diagram showing a side view (eg, a cross-sectional side view) of yet another exemplary semiconductor device component (component). Figure 4 As shown, the component 400 includes a vacuum chamber heat pipe 410, a thermally conductive polymer layer 420, a patterned metal layer 430, a semiconductor die 440a and a semiconductor die 440b. In this example, like the component 200, the semiconductor die 440a can be a power transistor, the semiconductor die 440b can be a fast recovery diode, and the component 400 can be included in a half-bridge circuit or can implement a half-bridge circuit.

[0048] like Figure 4 As shown, a thermally conductive polymer layer 420 is disposed on a surface of a vacuum chamber heat dissipation pipe 410, which is arranged in a plane P4 (aligned with the plane P4, located in the plane P4, etc.) (P4 extends into and out of the page). A patterned metal layer 430 is disposed on the thermally conductive polymer layer 420, and a semiconductor die 440a and a semiconductor die 440b are disposed on the patterned metal layer 430. Figure 4 In the example of , the vacuum chamber heat dissipation pipe 410 is disposed on a fluid cooling pipe 460 , which is capable of removing (transferring, dissipating, etc.) thermal energy (heat represented by arrow 415 ) transferred thereto by the vacuum chamber heat dissipation pipe 410 .

[0049] Compared with the vacuum chamber heat dissipation pipe 210 of FIG. 2, Figure 4 The vacuum chamber heat dissipation pipe 410 includes a plurality of evaporative cooling heat dissipation pipes 413 disposed in a metal chamber 412, which are arranged along corresponding longitudinal axes (e.g., longitudinal axes L4 and L5) that are orthogonal to the plane P4 and parallel to each other, rather than a single evaporative cooling heat dissipation pipe 213 of the component 200.

[0050] In some embodiments, Figure 4The arrangement shown can achieve certain advantages. For example, the arrangement of the plurality of evaporative cooling heat pipes 413 in the metal chamber 412 can enable a thicker vacuum chamber heat pipe 410 than the arrangement of the vacuum chamber heat pipe 210 because the plurality of evaporative cooling heat pipes 413 arranged in parallel can be easier to produce than a single larger evaporative cooling heat pipe 213. In addition, because the plurality of evaporative cooling heat pipes 413 are arranged in parallel (e.g., similar to parallel resistors), Figure 4 The thermal resistance of the arrangement structure can be low. Figure 4 As shown, the evaporation parts of the plurality of evaporative cooling type heat dissipation pipes 413 are disposed at the corresponding upper parts of the plurality of evaporative cooling type heat dissipation pipes 413 , and the condensation parts are disposed at the corresponding lower parts of the plurality of evaporative cooling type heat dissipation pipes 413 .

[0051] Figure 5 is a diagram showing a side view (e.g., a cross-sectional side view) of yet another exemplary semiconductor device assembly (assembly 500). As with assembly 300, assembly 500 has a double-sided cooling configuration including vacuum chamber heat pipes 510a and 510b that are similar in configuration to vacuum chamber heat pipe 410 of assembly 400. In assembly 500, a thermally conductive polymer layer 520a such as those described herein is disposed on vacuum chamber heat pipe 510a, and a thermally conductive polymer layer 520b is disposed on vacuum chamber heat pipe 510b. In addition, a patterned metal layer 530a is disposed on thermally conductive polymer layer 520a, and a patterned metal layer 530b is disposed on thermally conductive polymer layer 520b.

[0052] In this example, like the component 300, corresponding parts (components, elements, etc.) of the semiconductor device circuit such as the semiconductor die, the conductive spacer, etc. can be disposed on the patterned metal layer 530a and the patterned metal layer 530b. Such an example is shown in FIG. Figure 3B In and relative to Figure 3B For example, Figure 5 Conductive spacer 550a and conductive spacer 550b are shown in FIG. In some embodiments, electrical connections of the circuits of assembly 500 may be made as appropriate (eg, using conductive clamps, wire bonding, etc.). Figure 5 The cooling of the assembly 500 during its operation is achieved on both sides, such as the top side and the bottom side in the view of FIG. Figure 5 , the evaporation portions of the vacuum chamber heat dissipation pipes 510a and 510b are respectively indicated as evaporation portions 590e1 and 590e2, and the condensation portions of the vacuum chamber heat dissipation pipes 510a and 510b are respectively indicated as evaporation portions 590c1 and 590c2.

[0053] The vacuum chamber heat pipes 510a and 510b may operate in a manner similar to the vacuum chamber heat pipe 210, the vacuum chamber heat pipe 310a, the vacuum chamber heat pipe 310b, and / or the vacuum chamber heat pipe 410. For example, the vacuum chamber heat pipe 510a may dissipate heat conducted through the patterned metal layer 530a and the thermally conductive polymer layer 520a, for example, Figure 5 Similarly, the vacuum chamber heat pipe 510b can dissipate heat conducted through the patterned metal layer 530b and the thermally conductive polymer layer 520b, for example, as Figure 5 Fluid cooling tubes 560a and 560b may facilitate the removal of heat transferred from the circuitry of assembly 300 by vacuum chamber heat dissipation tubes 510a and 510b, respectively.

[0054] Figure 6 is shown for producing Figure 1 , Figure 2A and Figure 2B , Figure 3A , Figure 4 and Figure 5 Flowchart of an exemplary method 600 for semiconductor device assembly such as an assembly of . For assemblies such as assembly 300 and assembly 500 that implement double-sided cooling, method 600 may be performed multiple times, for example to form a portion of a circuit on a corresponding heat sink, such as in Figure 3B As an example and for the purpose of illustration, further reference will be made to Figure 1 The method 600 is described with reference to the component 100 of FIG.

[0055] like Figure 6 As shown, method 600 includes, at box 610, forming (e.g., printing) a layer of a thermally conductive polymer resin such as a thermally conductive polymer compound 120, such as on a surface of a metal chamber including an evaporative cooling heat pipe (vacuum chamber heat pipe 110). As described herein, the thermally conductive polymer compound of box 610 can be a mixture of a viscous polymer resin and thermally conductive nanoparticles (such as those described herein). At box 620, the method includes arranging (forming, depositing, etc.) a metal layer such as a patterned metal layer 130 on the layer of the thermally conductive polymer resin. In some embodiments, the metal layer of box 620 can be patterned (e.g., pre-patterned) before the metal layer is disposed on the thermally conductive polymer resin. In some embodiments, the metal layer of box 620 can be patterned (e.g., in-situ patterned) after it is disposed on the thermally conductive polymer layer. For example, a photolithography process and an etching process can be used to pattern the metal layer. The viscous resin can provide sufficient adhesion to temporarily hold the metal layer in place, for example, before curing the resin.

[0056] At block 630, method 600 includes curing the layer of thermally conductive polymer resin. Curing at block 630 may also adhere (fixedly couple, permanently adhere, etc.) the metal layer to the thermally conductive polymer layer. As described herein, curing the thermally conductive polymer resin at block 630 may be performed at a temperature between 200°C and 500°C. At block 640, after the curing operation at block 630, method 600 includes forming a semiconductor device circuit on the metal layer of block 620. In some embodiments, producing the semiconductor device circuit may include patterning the metal layer (e.g., if not pre-patterned) in situ to produce a patterned metal layer, coupling at least one semiconductor die to the patterned metal layer; and forming electrical connections of the semiconductor device circuit. Coupling at least one semiconductor die to the patterned metal layer may include soldering at least one semiconductor die. Forming the electrical connection may include coupling (e.g., soldering) at least one conductive clamp to the patterned metal layer and / or the at least one semiconductor die. In some embodiments, forming the electrical connection may also include forming one or more wire bonds between the patterned metal layer and the at least one semiconductor die.

[0057] It should be understood that in the foregoing description, when an element (such as a layer, a region or a substrate) is mentioned on another element, connected to another element, electrically connected to another element, coupled to another element, or electrically coupled to another element, the element may be directly on another element, connected or coupled to another element, or one or more intermediate elements may be present. On the contrary, when an element is mentioned directly on another element or layer, directly connected to another element or layer, or directly coupled to another element or layer, there is no intermediate element or layer. Although the term may not be used in the entire specific embodiment directly on ..., directly connected to ..., or directly coupled to ..., the element shown as directly on the element, directly connected or directly coupled can be mentioned in this manner. The claims of the present application may be revised to narrate the exemplary relationship described in the specification or shown in the drawings.

[0058] As used in this specification, unless the context clearly indicates a particular case, the singular form may include the plural form. In addition to the orientation shown in the drawings, spatial relative terms (e.g., above, above, above, below, below, below, below, at the top, at the bottom, etc.) are intended to cover different orientations of the device in use or operation. In some embodiments, the relative terms above and below may include vertically above and vertically below, respectively. In some embodiments, the term adjacent can include lateral adjacent or horizontal adjacent.

[0059] Some embodiments may be implemented using various semiconductor processing and / or packaging technologies. Some embodiments may be implemented using various types of semiconductor processing technologies associated with semiconductor substrates, including but not limited to, for example, silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), etc.

[0060] Although certain features of the described embodiments have been described as described herein, those skilled in the art will now recognize many modifications, alternatives, variations, and equivalents. For example, the features shown and / or aspects described with respect to one embodiment may also be included and / or applied in other embodiments where appropriate. Therefore, it should be understood that the appended claims are intended to cover all such modifications and variations that fall within the scope of the embodiments. It should be understood that these modifications and variations are presented only by way of example and not limitation, and various changes in form and detail may be made. In addition to mutually exclusive combinations, any part of the apparatus and / or method described herein may be combined in any combination. The embodiments described herein may include various combinations and / or sub-combinations of the functions, components, and / or features of the different embodiments described.

Claims

1. A semiconductor device assembly, comprising: a metal chamber configured to transfer thermal energy from a first surface of the metal chamber to a second surface of the metal chamber opposite the first surface; a thermally conductive polymer layer disposed on the first surface of the metal chamber; a patterned metal layer disposed on the thermally conductive polymer layer; and At least one semiconductor die is disposed on the patterned metal layer.

2. The semiconductor device assembly according to claim 1, wherein: The thermally conductive polymer layer comprises: curing the polymer resin; and Thermally conductive nanoparticles.

3. The semiconductor device assembly according to claim 2, wherein: The thermally conductive nanoparticles include ceramic nanoparticles.

4. The semiconductor device assembly according to claim 2, wherein: The thermally conductive nanoparticles include graphite nanoparticles.

5. The semiconductor device assembly according to claim 1, wherein: The metal chamber comprises: Vacuum chamber; and An evaporative cooling heat dissipation pipe is arranged in the vacuum chamber.

6. The semiconductor device assembly according to claim 5, wherein: The first surface of the metal chamber is arranged in a plane, and The evaporative cooling heat pipe is arranged along a longitudinal axis parallel to the plane.

7. The semiconductor device assembly according to claim 5, wherein: The first surface of the metal chamber is arranged in a plane; The evaporative cooling heat dissipation pipe is a first evaporative cooling heat dissipation pipe; The metal chamber further comprises: a second evaporative cooling heat dissipation pipe, The first evaporative cooling heat pipe is arranged along a first longitudinal axis orthogonal to the plane, and The second evaporative cooling heat pipe is arranged along a second longitudinal axis parallel to the first longitudinal axis.

8. The semiconductor device assembly of claim 1, further comprising a fluid cooling jacket disposed on the second surface of the metal chamber.

9. A semiconductor device assembly comprising: a first metal chamber configured to transfer thermal energy from a first surface of the first metal chamber to a second surface of the first metal chamber opposite the first surface; a second metal chamber configured to transfer thermal energy from a first surface of the second metal chamber to a second surface of the second metal chamber opposite the first surface; a first thermally conductive polymer layer disposed on the first surface of the first metal chamber; a second thermally conductive polymer layer disposed on the first surface of the second metal chamber; a first patterned metal layer, the first patterned metal layer being disposed on the first thermally conductive polymer layer; a second patterned metal layer, the second patterned metal layer being disposed on the second thermally conductive polymer layer; a first semiconductor die disposed on the first patterned metal layer; a second semiconductor die disposed on the second patterned metal layer; a first conductive spacer disposed on the first patterned metal layer and electrically coupled to the second semiconductor die; and A second conductive spacer is disposed on the second patterned metal layer and electrically coupled to the first semiconductor die.

10. The semiconductor device assembly according to claim 9, wherein: The first thermally conductive polymer layer and the second thermally conductive polymer layer include: curing the polymer resin; and Thermally conductive nanoparticles.

11. The semiconductor device assembly according to claim 10, wherein: The thermally conductive nanoparticles include at least one of ceramic nanoparticles and graphite nanoparticles.

12. The semiconductor device assembly according to claim 9, wherein: The first metal chamber comprises: a first vacuum chamber and a first evaporative cooling heat dissipation pipe, wherein the first evaporative cooling heat dissipation pipe is arranged in the first vacuum chamber; and The second metal chamber includes: a second vacuum chamber and a second evaporative cooling heat dissipation pipe, and the second evaporative cooling heat dissipation pipe is arranged in the second vacuum chamber.

13. The semiconductor device assembly according to claim 12, wherein: The first surface of the first metal chamber is arranged in a plane, The first evaporative cooling heat pipe is arranged along a first longitudinal axis parallel to the plane; and The second evaporative cooling heat pipe is arranged along a second longitudinal axis parallel to the plane.

14. The semiconductor device assembly according to claim 12, wherein: The first surface of the first metal chamber is arranged in a plane; The first evaporative cooling heat pipe is arranged along a first longitudinal axis orthogonal to the plane, and The second evaporative cooling heat pipe is arranged along a second longitudinal axis orthogonal to the plane.

15. The semiconductor device assembly according to claim 12, wherein: The first metal chamber further includes a third evaporative cooling heat pipe disposed in the first vacuum chamber; and The second metal chamber includes a fourth evaporative cooling heat pipe disposed in the second vacuum chamber, The first evaporative cooling heat dissipation tube, the second evaporative cooling heat dissipation tube, the third evaporative cooling heat dissipation tube, and the fourth evaporative cooling heat dissipation tube are arranged along respective longitudinal axes that are parallel to each other.

16. The semiconductor device assembly according to claim 15, wherein: The first surface of the first metal chamber is arranged in a plane, and The respective longitudinal axes are orthogonal to the plane.

17. The semiconductor device assembly according to claim 9, further comprising: a first fluid cooling jacket disposed on the second surface of the first metal chamber; and A second fluid cooling jacket is disposed on the second surface of the second metal chamber.

18. A method for producing a semiconductor device assembly, the method comprising: forming a layer of a thermally conductive polymer resin on a surface of a metal chamber including an evaporative cooling heat pipe; providing a metal layer on the layer of thermally conductive polymer resin; curing the layer of thermally conductive polymer resin; as well as After curing the layer of thermally conductive polymer resin, a semiconductor device circuit is produced on the metal layer.

19. The method according to claim 18, wherein: Producing the semiconductor device circuit comprises: patterning the metal layer to produce a patterned metal layer; coupling at least one semiconductor die to the patterned metal layer; and Electrical connections are formed for the semiconductor device circuit.

20. The method according to claim 18, wherein: Curing the layer of thermally conductive polymer resin adheres the metal layer to the layer of thermally conductive polymer resin.

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