Power module and charging device

Abstract

The invention provides a power module and a charging device, the power module comprises a resistor unit and a power device, and the resistor unit is used for adjusting a driving voltage for driving the power device to be switched on or switched off. Wherein one end of the resistor unit is connected with the control end of the power device, the other end of the resistor unit is connected with one end of the power device, and the voltage value of the two ends of the resistor unit is driving voltage. The resistor unit comprises a temperature-sensitive resistor, the resistance value of the temperature-sensitive resistor is related to the temperature of the power device, and the driving voltage is positively related to the temperature. The reliability of driving the power device can be improved, the power device is prevented from being damaged, and then the service life of the power device is prolonged.

Description

Technical Field

[0001] The present application relates to the field of electric power, and in particular to a power module and a charging device. Background Art

[0002] With the gradual development of power devices, power conversion devices, power distribution devices, etc. are developing towards higher power density, higher switching frequency, and ultra-high efficiency. In order to meet the needs of actual applications, these devices should ensure that they meet the reliability and life requirements under high and low temperature conditions.

[0003] In general, the withstand voltage between the two poles of a power device that are related to its on or off state is related to the temperature. Taking the insulated gate bipolar transistor (IGBT) as an example, the withstand voltage between the gate and the emitter of the power device is positively correlated with the temperature. At present, when driving the power device to turn on, most of the power devices are driven at a constant voltage. However, since the withstand voltage between the gate and the emitter of the power device decreases as the temperature decreases, if the power device continues to be driven at the set drive voltage when the temperature continues to decrease, the gate and the emitter of the power device may be broken down due to the decrease in the withstand voltage between the gate and the emitter of the power device, resulting in the inability to reliably drive the power device, or even causing damage to the power device, thereby reducing the life of the power device. Summary of the invention

[0004] The present application provides a power module and a charging device, which can improve the reliability of driving power devices and prevent damage to power devices, thereby extending the life of the power devices.

[0005] In a first aspect, a power module is provided, the power module comprising a resistor unit and a power device, wherein the resistor unit is used to adjust a driving voltage for driving the power device to be turned on or off. One end of the resistor unit is connected to a control end of the power device, and the other end of the resistor unit is connected to one end of the power device, and the voltage value across the two ends of the resistor unit is a driving voltage. The resistor unit comprises a thermistor, the resistance value of the thermistor is related to the temperature of the power device, and the driving voltage is positively correlated with the temperature.

[0006] In the embodiment of the present application, the resistance unit includes a temperature-sensitive resistor. When the temperature of the power device changes, the temperature of the temperature-sensitive resistor changes accordingly, and the resistance value of the temperature-sensitive resistor also changes, so that the voltage value at both ends of the resistance unit also changes, that is, the driving voltage used to drive the power device changes. Since the driving voltage used to drive the power device is positively correlated with the temperature, when the temperature of the power device decreases, the driving voltage also decreases. In this way, when the temperature of the power device decreases, resulting in a decrease in the withstand voltage between the control end of the power device and one end of the power device, the decrease in the driving voltage can prevent the two ends of the power device from being broken down due to the decrease in the withstand voltage between the control end of the power device and one end of the power device, thereby ensuring the reliable driving of the power device and improving the reliability of driving the power device. Furthermore, it can also prevent damage to the power device and extend the life of the power device.

[0007] In combination with the first aspect, in a possible implementation, the power module further includes a voltage regulator diode, one end of the voltage regulator diode is connected to the control end, and the other end of the voltage regulator diode is connected to one end of the power device. The voltage regulator diode is used to: when the driving voltage is greater than the breakdown voltage of the voltage regulator diode, stabilize the voltage between the control end and one end of the power device to the breakdown voltage, and the breakdown voltage of the voltage regulator diode is less than the absolute value of the breakdown voltage between the control end and one end of the power device.

[0008] In the embodiment of the present application, since the two ends of the Zener diode are respectively connected to the control end of the power device and one end of the power device, and the breakdown voltage of the Zener diode is less than the absolute value of the breakdown voltage between the control end of the power device and one end of the power device, when the driving voltage is greater than the breakdown voltage of the Zener diode, the Zener diode is broken down, and the voltage between the control end of the power device and one end of the power device is stabilized to the breakdown voltage of the Zener diode. Regardless of how the driving voltage changes, the voltage between the control end of the power device and one end of the power device is the breakdown voltage of the Zener diode, which can prevent the driving voltage from being greater than the tolerance voltage between the control end of the power device and one end of the power device, thereby preventing damage to the power device and extending the life of the power device.

[0009] In combination with the first aspect, in a possible implementation, when the power device is an N-channel switch tube or an NPN-type switch tube, the cathode of the Zener diode is connected to the control end, and the anode of the Zener diode is connected to one end of the power device. When the power device is a P-channel switch tube or a PNP-type, the anode of the Zener diode is connected to the control end, and the cathode of the Zener diode is connected to one end of the power device.

[0010] Based on the above scheme, when the power device is an N-channel switch tube or an NPN-type switch tube, the cathode of the Zener diode is connected to the control end, and the anode of the Zener diode is connected to one end of the power device; when the power device is a P-channel switch tube or a PNP-type, the anode of the Zener diode is connected to the control end, and the cathode of the Zener diode is connected to one end of the power device; therefore, when the driving voltage is greater than the breakdown voltage of the Zener diode, the Zener diode is broken down, and the voltage between the control end of the power device and one end of the power device is stabilized to the breakdown voltage of the Zener diode. Regardless of how the driving voltage changes, the voltage between the control end of the power device and one end of the power device is the breakdown voltage of the Zener diode, which can prevent the driving voltage from being greater than the withstand voltage between the control end of the power device and one end of the power device, which may cause the control end of the power device and one end of the power device to be broken down, thereby preventing damage to the power device and extending the life of the power device.

[0011] In combination with the first aspect, in a possible implementation, when the switch tube is an insulated gate bipolar transistor IGBT, one end of the power device is an emitter. When the switch tube is a metal-oxide semiconductor field effect transistor MOSFET or a power transistor GTR, one end of the power device is a source.

[0012] In the embodiment of the present application, when the switch tube is an IGBT, one end of the power device is an emitter. When the switch tube is a MOSFET or a GTR, one end of the power device is a source, which is equivalent to a voltage-stabilizing diode connected between the control end and the emitter of the power device, or connected between the control end and the source of the power device. In this way, when the driving voltage is greater than the breakdown voltage of the voltage-stabilizing diode, the voltage-stabilizing diode is broken down, and the voltage between the control end and the emitter (or source) of the power device is stabilized to the breakdown voltage of the voltage-stabilizing diode, which can prevent the control end and the emitter (or source) of the power device from being broken down due to the driving voltage being greater than the withstand voltage between the control end and the emitter (or source) of the power device, thereby preventing damage to the power device and extending the life of the power device.

[0013] In combination with the first aspect, in a possible implementation, the resistance unit includes a first resistance unit and a second resistance unit connected in series, one end of the first resistance unit is connected to the control end of the power device, the other end of the first resistance unit is connected to one end of the second resistance unit, the other end of the second resistance unit is connected to the one end of the power device, and the voltage value across the second resistance unit is a constant value. The first resistance unit includes a first resistor, and the second resistance unit includes a second resistor, a third resistor, and a temperature-sensitive resistor. The third resistor and the temperature-sensitive resistor are connected in series, and the third resistor and the temperature-sensitive resistor connected in series are connected in parallel with the second resistor, and the resistance value of the temperature-sensitive resistor is negatively correlated with the temperature.

[0014] In an embodiment of the present application, when the temperature of the power device decreases, resulting in a decrease in the withstand voltage between the control end of the power device and one end of the power device, the driving voltage designed to drive the power device in the present application is also reduced, which can prevent the situation where the withstand voltage between the control end of the power device and one end of the power device decreases due to the decrease in the temperature of the power device, thereby preventing the two ends from being broken down. This can improve the reliability of driving the power device.

[0015] In addition, when the ambient temperature of the power device decreases, the presence of the thermistor can reduce the driving voltage used to drive the power device, and the reduction in driving voltage causes the on-resistance of the power device to increase. The heat generated by the on-resistance increases, and the temperature of the thermistor increases. Since the resistance of the thermistor is negatively correlated with the temperature, the resistance of the thermistor decreases, thereby increasing the voltage across the resistor unit, and thus increasing the driving voltage used to drive the power device. When the driving voltage used to drive the power device increases, the on-resistance of the power device decreases, thereby reducing the driving voltage used to drive the power device. After multiple cycles, the driving voltage will eventually be a relatively stable voltage value, so that the power module reaches a relatively balanced working state. In this state, the power module operates in a relatively stable state, thereby improving the stability and reliability of the power module.

[0016] In combination with the first aspect, in a possible implementation, the resistance unit includes a first resistance unit and a second resistance unit connected in series, one end of the first resistance unit is connected to the control end of the power device, the other end of the first resistance unit is connected to one end of the second resistance unit, the other end of the second resistance unit is connected to the one end of the power device, and the voltage value across the second resistance unit is a constant value. The first resistance unit includes a first resistor, a second resistor and a temperature-sensitive resistor, and the second resistance unit includes a third resistor. The second resistor and the temperature-sensitive resistor are connected in series, the second resistor and the temperature-sensitive resistor in series are connected in parallel with the first resistor, and the resistance value of the temperature-sensitive resistor is positively correlated with the temperature.

[0017] In an embodiment of the present application, when the temperature of the power device decreases, resulting in a decrease in the withstand voltage between the control end of the power device and one end of the power device, the driving voltage of the power device designed to be driven is also reduced, which can prevent the situation where the withstand voltage between the control end of the power device and one end of the power device is reduced due to the decrease in the temperature of the power device, thereby preventing the two ends from being broken down. This can improve the reliability of the driving power device.

[0018] In addition, when the ambient temperature of the power device decreases, the presence of the thermistor can reduce the driving voltage used to drive the power device, and the reduction in the driving voltage causes the on-resistance of the power device to increase, and the heat generated by the on-resistance increases, so the temperature of the thermistor increases. Since the resistance of the thermistor is positively correlated with the temperature, the resistance of the thermistor increases, thereby increasing the voltage across the resistor unit, and thereby increasing the driving voltage used to drive the power device. When the driving voltage used to drive the power device increases, the on-resistance of the power device decreases, thereby reducing the driving voltage used to drive the power device. After multiple cycles, the driving voltage will eventually be a relatively stable voltage value, so that the power module reaches a relatively balanced working state. In this state, the power module operates in a relatively stable state, thereby improving the stability and reliability of the power module.

[0019] In combination with the first aspect, in a possible implementation, the power module further includes a power supply circuit and a drive circuit. One input end of the drive circuit is connected to one end of the first resistor unit, the other input end of the drive circuit is connected to the other end of the second resistor unit, the output end of the drive circuit is connected to the control end, and the drive circuit is used to convert the voltage across the resistor unit into a pulse width modulation PWM wave output, and the voltage value across the resistor unit is a voltage value corresponding to the high level signal of the PWM wave. The power supply circuit is used to: input a voltage value to a connection point between one end of the first resistor unit and the input end of the drive circuit, and the voltage value of the series connection point of the first resistor unit and the second resistor unit is a first voltage value; when the voltage value of the series connection point of the first resistor unit and the second resistor unit changes, adjust the voltage value input to the connection point of the first resistor unit and the input end of the drive circuit so that the voltage value of the series connection point of the first resistor unit and the second resistor unit is stabilized to the first voltage value.

[0020] In the embodiment of the present application, the power supply circuit can input a voltage value to the connection point between one end of the first resistor unit and the input end of the driving circuit. When the ambient temperature of the power device suddenly changes, the resistance value of the temperature-sensitive resistor changes, and the overall resistance value of the series connection of the first resistor unit and the second resistor unit changes, so that the voltage value of the series connection point of the first resistor unit and the second resistor unit changes. At this time, the power supply circuit can adjust the voltage value input to the connection point of the first resistor unit and the input end of the driving circuit according to the voltage value of the series connection point of the first resistor unit and the second resistor unit to stabilize the voltage value of the series connection point of the first resistor unit and the second resistor unit to the first voltage value, and the voltage input to the driving circuit changes accordingly, and the high-level voltage corresponding to the PWM wave output by the driving circuit also changes, that is, the driving voltage used to drive the power device changes, so as to prevent the withstand voltage between the control end of the power device and one end of the power device from being reduced, resulting in the breakdown of these two ends, and ensure the reliable driving of the power device, thereby improving the reliability of driving the power device.

[0021] In combination with the first aspect, in a possible implementation manner, the temperature sensitive resistor is integrated into a power device.

[0022] In the embodiment of the present application, when the thermistor is integrated into the power device, the temperature of the thermistor is substantially consistent with the temperature of the power device. In other words, the temperature of the thermistor can more accurately reflect the temperature of the power device, and the temperature of the thermistor can accurately reflect the temperature of the power device. Since the driving voltage used to drive the power device changes with the temperature of the thermistor, when the temperature of the thermistor can more accurately reflect the temperature of the power device, the driving voltage used to drive the power device can be more accurately controlled, thereby ensuring reliable driving of the power device and improving the reliability of the power device driving.

[0023] In combination with the first aspect, in a possible implementation manner, the power module further includes a fourth resistor, and the fourth resistor is connected in series between one end of the resistor unit and the control end of the power device.

[0024] In an embodiment of the present application, the fourth resistor is connected in series between one end of the resistor unit and the control end of the power device. Even if the high-level voltage corresponding to the PWM wave output by the driving circuit is large, the fourth resistor can increase the resistance of the loop connecting the driving circuit to the reference ground through the power device, thereby reducing the current flowing into the control end of the power device, thereby reducing the risk of damage to the power device.

[0025] In a second aspect, a charging device is provided, which includes a charging module and a power module according to any one of the first aspects above, wherein the power module is used to control the charging module to deliver electric energy to the electric vehicle or stop delivering electric energy.

[0026] For the technical effects that may be achieved in the second aspect, please refer to the description of the technical effects that can be achieved in any possible implementation method of the first aspect mentioned above, and no further details will be given here. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic diagram of the structure of a charging system provided in an embodiment of the present application.

[0028] Figure 2 A schematic diagram of the structure of a base station used in a 5G communication system provided in an embodiment of the present application.

[0029] Figures 3 to 15 A schematic diagram of a power module provided in an embodiment of the present application. DETAILED DESCRIPTION

[0030] The technical solution in this application will be described below in conjunction with the accompanying drawings.

[0031] In the description of the embodiments of the present application, unless otherwise specified, “ / ” means or. For example, A / B can mean A or B. The “and / or” in this article is merely a way to describe the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone.

[0032] In the embodiments of the present application, prefixes such as "first" and "second" are used only to distinguish different description objects, and have no limiting effect on the position, order, priority, quantity or content of the described objects. The use of prefixes such as ordinal numbers to distinguish description objects in the embodiments of the present application does not constitute a limitation on the described objects. For the statement of the described objects, please refer to the description in the context of the claims or embodiments, and no unnecessary limitation should be constituted due to the use of such prefixes. In addition, in the description of the present embodiment, unless otherwise specified, the meaning of "multiple" is two or more.

[0033] With the development of new energy vehicle technology, many automobile manufacturers have gradually launched electric vehicles. Electric vehicles have become the choice of many users because of their energy saving and environmental protection as well as relatively mature technology.

[0034] The present application can be applied to a system in which a power supply device and a load charge each other through a power distribution matrix, especially for a system including a charging pile and an electric vehicle, the charging pile can use the electric energy from the power grid to charge the electric vehicle, and the electric vehicle can also output its own electric energy back to the power grid.

[0035] Figure 1 The structural diagram of the charging system 10 provided in the embodiment of the present application is exemplified.

[0036] Combination Figure 1(a) and Figure 1 In (b), the charging system 10 may include a charging device 11 and an electric vehicle 12. The charging device 11 may be used to receive the AC power outputted by the external power grid 15, and convert the AC power into stable DC power and then transmit it to the electric vehicle 12 to charge the electric vehicle 12. Alternatively, the electric vehicle 12 may also output electric energy to the external power grid 15 in reverse.

[0037] In some embodiments, Figure 1 As shown in (a), the charging device 11 is a split-type charging pile. Specifically, the charging device 11 may include a charging host 111, at least one charging terminal 112 and at least one charging gun 113. Among them, the charging host 111 includes multiple charging modules (not shown in the figure), the output ends of the multiple charging modules are connected to the at least one charging terminal 112, the at least one charging terminal 112 is connected to the at least one charging gun 113, and each charging gun 113 is used to connect to the electric vehicle 12. Exemplarily, one charging terminal 112 can be connected to one or more charging guns 113, and one or more charging guns 113 can be connected to the same electric vehicle 12.

[0038] The charging module may include, for example, a plurality of power conversion devices, which may convert the AC power from the external power grid 15 into stable DC power and then transmit it to the charging terminal 112. The plurality of power conversion devices may include, for example, an alternating current-direct current (AC-DC) conversion device and a direct current-direct current (DC-DC) conversion device. The charging terminal 112 transmits the stable DC power to the electric vehicle 12 through the charging gun 113 to charge the electric vehicle 12.

[0039] In one example, the charging terminal 112 also includes a power distribution component (not shown in the figure), and the charging gun 113 includes a charging cable and a charging gun head. Among them, the output ends of the multiple charging modules in the charging host 111 are connected to one end of the charging cable through the power distribution component, and the other end of the charging cable is connected to the charging gun head. The charging gun head is used to connect to the charging interface of the electric vehicle 12. In addition, the DC power output by the multiple charging modules is delivered to the electric vehicle 12 through the charging gun 113.

[0040] Exemplarily, the power distribution assembly includes contactors, shunts, and fuses, etc., for on-off control of the circuit, current detection, overcurrent protection, etc. In addition, the power distribution assembly may also include a copper busbar, which is connected to the output ends of the multiple charging modules in the charging host 111 and one end of the charging cable in the charging gun 113 to achieve electrical connection between the multiple charging modules and the charging gun 113.

[0041] The charging terminal 112 may include a housing, a human-machine interaction interface, a charging control unit, a metering and billing unit, etc., and is used for information exchange, energy transmission, metering and billing, etc. with the electric vehicle 12.

[0042] The electric vehicle 12 may be a vehicle driven by electric energy, such as a pure electric vehicle / battery electric vehicle (pure EV / battery EV), a hybrid electric vehicle (HEV), a range extended electric vehicle (REEV), or a plug-in hybrid electric vehicle (PHEV).

[0043] In other embodiments, Figure 1 As shown in (b), the charging device 11 is an integrated charging pile. Specifically, the charging device 11 can directly set the human-machine interface, charging control unit and metering and billing unit in the charging host 111, so that the charging device 11 can only include the charging host 111 and at least one charging gun 113 electrically connected to the charging host 111, but not the charging terminal 112. The multiple power conversion devices in the charging host 111 can convert the AC power from the external power grid 15 into stable DC power, and then directly transmit it to the electric vehicle 12 through the charging gun 113.

[0044] Figure 1 (c) in Figure 1 (a) Figure 1 The structural diagram of the charging system 10 shown in (b) of FIG. 1 , wherein the charging host 111 may include a plurality of AC-DC conversion devices 1111 , a DC-DC conversion device 1112 , a DC bus 1113 and a power distribution device 1114 .

[0045] The input ends of the multiple AC-DC conversion devices 1111 can be connected to the external power grid 15, and the output ends of the multiple AC-DC conversion devices 1111 can be connected to the DC bus 1113. That is, the multiple AC-DC conversion devices 1111 can be connected in parallel between the external power grid 15 and the DC bus 1113. The multiple AC-DC conversion devices 1111 can be used to receive alternating current from the external power grid 15, and convert the alternating current into direct current, and then output it through the DC bus 1113.

[0046] The input end of the DC-DC converter 1112 can be connected to the DC bus 1113, and the output end of the DC-DC converter 1112 can be connected to the charging terminal 112 through the power distribution device 1114. The DC-DC converter 1112 can receive the DC power output by the multiple AC-DC converters 1111 through the DC bus 1113, and further convert the DC power into DC power suitable for the vehicle 12 and transmit it to the power distribution device 1114. The power distribution device 1114 can dynamically distribute the DC power output by the multiple DC-DC converters 1112 according to the actual charging power required by the vehicle, and the distributed charging power is transmitted to the vehicle 12 through the charging terminal 112 for charging the vehicle 12.

[0047] Figure 2 It is a structural diagram of a base station 20 applied in a 5G communication system provided in an embodiment of the present application.

[0048] See also Figure 2 The base station 20 may include a baseband unit (BBU) (not shown in the figure), an RRU 21 , an AAU 22 , an antenna device 23 and a power supply device 24 .

[0049] The BBU can be connected to the RRU 21 and the AAU 22 respectively through optical fibers. The BBU is a core device in the base station 20, and is mainly responsible for processing and modulating digital signals, and transmitting the processed digital signals to the RRU 21 and the AAU 22 through optical fibers.

[0050] The RRU 21 can be electrically connected to the antenna device 23 via the feeder 26. The RRU 21 is mainly responsible for modulating the digital signal from the BBU into a radio frequency signal and amplifying it, and transmitting the amplified radio frequency signal to the antenna device 23 via the feeder 26, and then the antenna device 23 transmits the radio frequency signal. Alternatively, the RRU 21 can also receive a radio frequency signal from the antenna device 23 via the feeder 26, demodulate the radio frequency signal, and transmit it to the BBU.

[0051] RRU21 generally includes an intermediate frequency unit, a TRU unit, a power amplifier unit and a power supply unit. The intermediate frequency unit is used to modulate and demodulate the digital signal, perform digital up / down conversion and D / A conversion to convert it into an intermediate frequency analog signal. The TRU unit is used to convert the intermediate frequency analog signal into an RF signal. The power amplifier unit is used to amplify the RF signal. The power supply unit is used to supply power to the TRU and the power amplifier unit.

[0052] The AAU 22 may be formed by integrating the RRU 21 and part of the antenna device 23 , and thus has the structure and function of both the RRU 21 and the antenna device 23 .

[0053] The power supply device 24 can be connected to the BBU, RRU21 and AAU22 through the bus 25 to supply power to the BBU, RRU21 and AAU22. The power supply device 24 may include an alternating current-direct current (AC-DC) conversion device to convert the AC voltage value from the power grid (e.g., 220V mains) into a negative DC voltage value and then transmit it to the BBU, RRU21 and AAU22. Alternatively, the power supply device 24 may also include a DC battery to directly provide a negative DC voltage value to the BBU, RRU21 and AAU22. In addition, the battery 27 may also supply power to the BBU, RRU21 and AAU22 through the bus 25.

[0054] It should be understood that the above Figure 2 This is just an example. In one possible example, the battery 27 and the power supply device 24 may be an integrated device, so that Figure 2 Only a power supply device 24 is included, and the power supply device 24 supplies power to the BBU, the RRU 21 and the AAU 22.

[0055] In actual use, Figure 2 As shown, the base station 20 may be a distributed base station. The RRU 21, AAU 22 and antenna device 23 may be installed on the top of the tower 210; or, the RRU 21, AAU 22 and antenna device 23 may be installed on the roof 220, or other high places such as mountains. The BBU and power supply device 24 may be installed on the top of the tower 210 or in a remote machine room 230.

[0056] Among them, AC-DC conversion devices, DC-DC conversion devices, and power distribution devices mostly use semiconductor power devices. With the gradual development of power devices, these devices are developing towards higher power density, higher switching frequency, and ultra-high efficiency. In order to meet the needs of actual applications, these devices should ensure that they meet the reliability and life requirements under high and low temperature conditions.

[0057] Generally speaking, the withstand voltage between the two poles of a power device that are related to its on or off state is related to the temperature. Taking the power device IGBT as an example, the withstand voltage between the gate and the emitter of the power device is positively correlated with the temperature, that is, the withstand voltage between the gate and the emitter of the power device increases when the temperature rises, and the withstand voltage between the gate and the emitter of the power device decreases when the temperature decreases. At present, when driving the power device to turn on, most of the power devices are driven at a constant voltage. However, since the withstand voltage between the gate and the emitter of the power device decreases as the temperature decreases, if the power device continues to be driven at the set drive voltage when the temperature continues to decrease, the gate and the emitter of the power device may be broken down due to the decrease in the withstand voltage between the gate and the emitter of the power device, resulting in the inability to reliably drive the power device, or even damage to the power device, thereby reducing the life of the power device.

[0058] Based on this, the present application provides a power module that can improve the reliability of driving power devices and prevent damage to power devices, thereby extending the life of the power devices.

[0059] like Figure 3 , which is a schematic diagram of a power module provided by the present application. The power module includes a resistor unit 310 and a power device 320 (ie, a switch tube Q in the figure), wherein the resistor unit 310 is used to adjust a driving voltage for driving the power device 320 to turn on or off.

[0060] It should be understood that the above Figure 3 Taking IGBT as an example of medium-power devices, power devices can also be metal-oxide-semiconductor field-effect transistors (MOSFET), giant transistors (GTR), gallium nitride (GaN) high electron mobility transistors (HEMT), etc.

[0061] One end of the resistance unit 310 is connected to the control end of the power device 320 , and the other end of the resistance unit 310 is connected to one end of the power device 320 . The voltage across the two ends of the resistance unit 310 is a driving voltage.

[0062] In the embodiments of the present application, Figure 3 Taking the power device 320 as an IGBT as an example, since one end of the resistance unit 310 is connected to the gate of the switch tube Q, and the other end of the resistance unit 310 is connected to the emitter of the switch tube Q, the voltage across the resistance unit 310 is the driving voltage for driving the switch tube Q.

[0063] In the embodiment of the present application, the resistance unit 310 includes a temperature-sensitive resistor, the resistance value of the temperature-sensitive resistor changes with the temperature of the power device, and the driving voltage is positively correlated with the temperature.

[0064] Since the resistance unit 310 includes a temperature-sensitive resistor Rt, when the temperature of the power device 320 changes, the temperature of the temperature-sensitive resistor Rt changes accordingly, and the resistance value of the temperature-sensitive resistor Rt also changes, so that the voltage value across the resistance unit 310 also changes, that is, the driving voltage used to drive the switch tube Q changes. In addition, because the driving voltage is positively correlated with the temperature, that is, when the temperature of the power device 320 increases, the driving voltage increases; when the temperature of the power device 320 decreases, the driving voltage decreases; in this way, when the temperature of the power device 320 decreases, resulting in a decrease in the withstand voltage between the gate and the emitter of the power device 320, the decrease in the driving voltage can prevent the gate and the emitter of the power device from being broken down due to the decrease in the withstand voltage between the gate and the emitter of the power device 320, thereby ensuring the reliable driving of the power device 320, thereby improving the reliability of driving the power device 320. Furthermore, it can also prevent the damage of the power device 320 and extend the life of the power device 320.

[0065] The specific circuit topology of the resistor unit 310 will be described below. Prior to this, the present application first briefly introduces the on-resistance of the switch tube Q. After the switch tube Q is turned on, there is an on-resistance, and the on-resistance of the switch tube Q decreases with the increase of the driving voltage, that is, as the driving voltage increases, the on-resistance of the switch tube Q decreases, and as the driving voltage decreases, the on-resistance of the switch tube Q increases.

[0066] In one embodiment, Figure 4 As shown, the resistance unit 310 includes a first resistance unit 311 and a second resistance unit 312 connected in series, one end of the first resistance unit 311 is connected to the control end of the power device 320, the other end of the first resistance unit 311 is connected to one end of the second resistance unit 312, the other end of the second resistance unit 312 is connected to one end of the power device 320, and the voltage value across the second resistance unit 312 is a constant value.

[0067] The first resistor unit includes a first resistor R1, and the second resistor unit includes a second resistor R2, a third resistor R3 and a temperature-sensitive resistor Rt. The third resistor R3 and the temperature-sensitive resistor Rt are connected in series, and the third resistor R3 and the temperature-sensitive resistor Rt are connected in series in parallel with the second resistor R2, and the resistance of the temperature-sensitive resistor Rt is negatively correlated with the temperature.

[0068] In the embodiment of the present application, the resistance of the temperature-sensitive resistor Rt is negatively correlated with the temperature, that is, as the temperature of the temperature-sensitive resistor Rt increases, the resistance of the temperature-sensitive resistor Rt decreases, and as the temperature of the temperature-sensitive resistor Rt decreases, the resistance of the temperature-sensitive resistor Rt increases. Therefore, as the resistance of the temperature-sensitive resistor Rt changes, the driving voltage used to drive the switch tube Q also changes, which can ensure reliable driving of the power device.

[0069] Specifically, when the switch tube Q is in the on state, when the ambient temperature of the switch tube Q changes suddenly, for example, the ambient temperature of the switch tube Q decreases, the resistance of the temperature-sensitive resistor Rt is negatively correlated with the temperature, and therefore, the resistance of the temperature-sensitive resistor Rt increases, and the resistance of the temperature-sensitive resistor Rt and the third resistor R3 connected in series increases, so that the overall resistance of the temperature-sensitive resistor Rt and the third resistor R3 connected in series and the second resistor R2 increases. In addition, since the voltage value at both ends of the second resistor unit 312 is a constant value, the current value I flowing through the second resistor unit 312 decreases. Since the first resistance unit 311 is connected in series with the second resistance unit 312, the current value flowing through the first resistance unit 311 is also reduced, that is, the current value flowing through the first resistor R1 is reduced, so that the voltage value across the first resistor R1 is reduced, and the voltage value across the first resistor R1 after the first resistance unit 311 and the second resistance unit 312 are connected in series is also reduced, thereby reducing the driving voltage for driving the switch tube Q, which can prevent the gate and emitter of the power device from being broken down due to the reduction in the withstand voltage between the gate and the emitter of the switch tube Q caused by the reduction in the temperature of the power device, and ensure reliable driving of the switch tube Q.

[0070] In addition, as the driving voltage used to drive the switch tube Q decreases, the on-resistance of the switch tube Q increases, thereby increasing the heat generated by the on-resistance, increasing the temperature of the temperature-sensitive resistor Rt, and reducing the resistance of the temperature-sensitive resistor Rt. Then, the overall resistance of the temperature-sensitive resistor Rt and the third resistor R3 connected in series and connected in parallel with the second resistor R2 decreases. Since the voltage value across the second resistor unit 312 is a constant value, the current I flowing through the second resistor unit 312 increases. Since the first resistor unit 311 and the second resistor unit 312 are connected in series, the current flowing through the first resistor unit 311 also increases, that is, the current flowing through the first resistor R1 increases, thereby increasing the voltage across the first resistor R1. In this way, the voltage across the first resistor R1 increases, and the voltage across the first resistor 311 and the second resistor unit 312 connected in series also increases, thereby increasing the driving voltage used to drive the switch tube Q.

[0071] In summary, when the ambient temperature of the switch tube Q decreases, the driving voltage used to drive the switch tube Q also decreases. The decrease in driving voltage will increase the on-resistance of the switch tube Q. The increase in the on-resistance of the switch tube Q will increase the driving voltage used to drive the switch tube Q. The increase in driving voltage will reduce the on-resistance of the switch tube Q, thereby reducing the driving voltage used to drive the switch tube Q. After multiple cycles, the driving voltage will eventually be a relatively stable voltage value, so that the power module reaches a relatively balanced working state. In this state, the power module works in a relatively stable state, which can improve the stability of the power module.

[0072] Based on the circuit topology designed in the present application, when the temperature of the power device 320 decreases, resulting in a decrease in the withstand voltage between the gate and the emitter of the power device 320, the driving voltage designed in the present application for driving the switch tube Q is also reduced, which can prevent the gate and emitter of the power device from being broken down due to the decrease in the withstand voltage between the gate and the emitter of the power device caused by the decrease in the temperature of the power device, thereby improving the reliability of driving the power device.

[0073] In addition, when the ambient temperature of the power device decreases, the presence of the temperature-sensitive resistor Rt can reduce the driving voltage used to drive the switch tube Q, and the reduction in the driving voltage causes the on-resistance of the switch tube Q to increase, and the heat generated by the on-resistance increases, so the temperature of the temperature-sensitive resistor Rt increases. Since the resistance of the temperature-sensitive resistor is negatively correlated with the temperature, the resistance of the temperature-sensitive resistor Rt decreases, so that the voltage across the resistor unit 310 increases, and the driving voltage used to drive the switch tube Q increases. When the driving voltage used to drive the switch tube Q increases, the on-resistance of the switch tube Q decreases, and the driving voltage used to drive the switch tube Q decreases. After multiple cycles, the driving voltage will eventually be a relatively stable voltage value, so that the power module reaches a relatively balanced working state. In this state, the power module works in a relatively stable state, so that the stability and reliability of the power module can be improved.

[0074] In one embodiment, Figure 5 As shown, the resistance unit 310 includes a first resistance unit 311 and a second resistance unit 312 connected in series, one end of the first resistance unit 311 is connected to the control end of the power device 320, the other end of the first resistance unit 311 is connected to one end of the second resistance unit 312, the other end of the second resistance unit 312 is connected to one end of the power device 320, and the voltage value across the second resistance unit 312 is a constant value.

[0075] The first resistor unit 311 includes a first resistor R1, a second resistor R3 and a temperature-sensitive resistor Rt, and the second resistor unit 312 includes a third resistor R2. The second resistor R3 and the temperature-sensitive resistor Rt are connected in series, and the second resistor R3 and the temperature-sensitive resistor Rt are connected in series with the first resistor R1 in parallel, and the resistance of the temperature-sensitive resistor Rt is positively correlated with the temperature.

[0076] In the embodiment of the present application, the resistance of the temperature-sensitive resistor Rt is positively correlated with the temperature, that is, as the temperature of the temperature-sensitive resistor Rt increases, the resistance of the temperature-sensitive resistor Rt increases, and as the temperature of the temperature-sensitive resistor Rt decreases, the resistance of the temperature-sensitive resistor Rt decreases. Therefore, as the resistance of the temperature-sensitive resistor Rt changes, the driving voltage used to drive the switch tube Q also changes, which can ensure reliable driving of the power device.

[0077] Specifically, when the switch tube Q is in the on state, when the ambient temperature of the switch tube Q changes suddenly, for example, the ambient temperature of the switch tube Q decreases, since the resistance of the temperature-sensitive resistor Rt is positively correlated with the temperature, the resistance of the temperature-sensitive resistor Rt decreases, and the resistance of the temperature-sensitive resistor Rt and the third resistor R3 connected in series decreases, so that the overall resistance of the temperature-sensitive resistor Rt and the third resistor R3 connected in series and the second resistor R2 decreases. Since the voltage value at both ends of the second resistor unit 312 is a constant value, the current value I flowing through the second resistor unit 312 is constant. Since the first resistance unit 311 is connected in series with the second resistance unit 312, the current value I flowing through the first resistance unit 311 is also constant. Since the resistance value of the first resistance unit 311 is reduced, the voltage value across the first resistor R1 is reduced, and the voltage value across the first resistance unit 311 and the second resistance unit 312 after being connected in series is also reduced, thereby reducing the driving voltage for driving the switch tube Q. This can prevent the gate and emitter of the power device from being broken down due to the reduced withstand voltage between the gate and emitter of the switch tube Q caused by the reduced temperature of the power device, thereby ensuring reliable driving of the switch tube Q.

[0078] In addition, as the driving voltage used to drive the switch tube Q decreases, the on-resistance of the switch tube Q increases, thereby increasing the heat generated by the on-resistance, increasing the temperature of the temperature-sensitive resistor Rt, and increasing the resistance of the temperature-sensitive resistor Rt. Then, after the temperature-sensitive resistor Rt is connected in series with the second resistor R3 and then connected in parallel with the third resistor R2, the overall resistance increases. Since the voltage value at both ends of the second resistor unit 312 is a constant value, the current value I flowing through the second resistor unit 312 is constant. Since the first resistor unit 311 is connected in series with the second resistor unit 312, the current value I flowing through the first resistor unit 311 is also constant. Since the resistance value of the first resistor unit 311 increases, the voltage value at both ends of the first resistor unit 311 increases. In this way, the voltage value at both ends of the first resistor unit 311 and the second resistor unit 312 after being connected in series also increases, thereby increasing the driving voltage used to drive the switch tube Q.

[0079] In summary, when the ambient temperature of the switch tube Q decreases, the driving voltage used to drive the switch tube Q also decreases, and the decrease in the driving voltage will cause the on-resistance of the switch tube Q to increase. The increase in the on-resistance of the switch tube Q will increase the driving voltage used to drive the switch tube Q. The increase in the driving voltage causes the on-resistance of the switch tube Q to decrease, thereby reducing the driving voltage used to drive the switch tube Q. After multiple cycles, the driving voltage will eventually be a relatively stable voltage value, so that the power module reaches a relatively balanced working state. In this state, the power module works in a relatively stable state, which can improve the stability of the power module.

[0080] Based on the circuit topology designed in the present application, when the temperature of the power device 320 decreases, resulting in a decrease in the withstand voltage between the gate and the emitter of the power device 320, the driving voltage of the driving switch tube Q designed in the present application is also reduced, which can prevent the gate and emitter of the power device from being broken down due to the decrease in the withstand voltage between the gate and the emitter of the power device caused by the decrease in the temperature of the power device, thereby improving the reliability of driving the power device.

[0081] In addition, when the ambient temperature of the power device decreases, the presence of the temperature-sensitive resistor Rt can reduce the driving voltage used to drive the switch tube Q, and the reduction in the driving voltage causes the on-resistance of the switch tube Q to increase, and the heat generated by the on-resistance increases, so the temperature of the temperature-sensitive resistor Rt increases. Since the resistance of the temperature-sensitive resistor is positively correlated with the temperature, the resistance of the temperature-sensitive resistor Rt increases, so that the voltage across the resistor unit 310 increases, and the driving voltage used to drive the switch tube Q increases. When the driving voltage used to drive the switch tube Q increases, the on-resistance of the switch tube Q decreases, and the driving voltage used to drive the switch tube Q decreases. After multiple cycles, the driving voltage will eventually be a relatively stable voltage value, so that the power module reaches a relatively balanced working state. In this state, the power module works in a relatively stable state, so that the stability and reliability of the power module can be improved.

[0082] In one embodiment, the power module further includes a voltage regulator diode. One end of the voltage regulator diode is connected to the control end, and the other end of the voltage regulator diode is connected to one end of the power device 320. The voltage regulator diode is used to stabilize the voltage between the control end and one end of the power device to a breakdown voltage when the driving voltage is greater than the breakdown voltage of the voltage regulator diode, and the breakdown voltage of the voltage regulator diode is less than the absolute value of the breakdown voltage between the control end and one end of the power device.

[0083] In the embodiment of the present application, since the two ends of the Zener diode are respectively connected to the control end of the power device 320 and one end of the power device 320, and the breakdown voltage of the Zener diode is less than the absolute value of the breakdown voltage between the control end of the power device 320 and one end of the power device 320, when the driving voltage is greater than the breakdown voltage of the Zener diode, the Zener diode is broken down, and the voltage between the control end of the power device 320 and one end of the power device 320 is stabilized to the breakdown voltage of the Zener diode. Regardless of how the driving voltage changes, the voltage between the control end of the power device 320 and one end of the power device 320 is the breakdown voltage of the Zener diode, which can prevent the driving voltage from being greater than the withstand voltage between the control end of the power device 320 and one end of the power device 320, thereby preventing damage to the power device 320 and extending the life of the power device 320.

[0084] In one embodiment, when the power device is an N-channel switch tube or an NPN-type switch tube, the cathode of the voltage-stabilizing diode is connected to the control end of the power device, and the anode of the voltage-stabilizing diode is connected to one end of the switch tube. When the power device is a P-channel switch tube or a PNP-type switch tube, the anode of the power device is connected to the control end of the power device, and the cathode of the voltage-stabilizing diode is connected to one end of the switch tube.

[0085] As described above, the power device in the embodiment of the present application may be an IGBT, a MOSFET, or a GTR.

[0086] When the switch tube is an IGBT, one end of the power device is the emitter, that is, when the power device is an N-channel IGBT, the anode of the Zener diode D is connected to the emitter E of the switch tube, and the cathode of the Zener diode D is connected to the gate G of the switch tube. Figure 6 As shown; when the power device is a P-channel IGBT, the cathode of the Zener diode D is connected to the emitter E of the switch tube, and the anode of the Zener diode D is connected to the gate G of the switch tube, as shown Figure 7 shown.

[0087] refer to Figure 6For an N-channel switch tube, the difference between the gate voltage of the switch tube Q and the emitter voltage of the switch tube Q is greater than the turn-on voltage of the switch tube Q, and the switch tube Q can be turned on. In other words, when the switch tube Q is an N-channel switch tube, the gate voltage of the switch tube Q is higher than the emitter voltage. For an N-channel switch tube, the present application designs a zener diode D whose anode is connected to the emitter E of the switch tube Q, and a zener diode D whose cathode is connected to the gate G of the switch tube Q, which can prevent the gate and emitter of the switch tube Q from being broken down due to the driving voltage used to drive the switch tube Q being greater than the tolerance voltage of the gate voltage and emitter voltage of the switch tube Q, thereby preventing damage to the switch tube Q and extending the life of the switch tube Q.

[0088] Exemplarily, assuming that the turn-on voltage of the switch tube Q is 3.3V, the withstand voltage between the gate and emitter of the switch tube Q is 15V, and the breakdown voltage of the Zener diode D is 12V, when the voltage between the gate G and the emitter E of the switch tube Q is 4.0, since the voltage between the gate G and the emitter E of the switch tube Q is greater than the turn-on voltage, the switch tube Q is turned on.

[0089] Since the anode of the Zener diode D is connected to the emitter of the switch tube Q, and the cathode of the Zener diode D is connected to the gate of the switch tube Q, the voltage applied across the Zener diode D is 4.0V, and since the voltage of the emitter connected to the anode of the Zener diode D is less than the voltage of the gate connected to the cathode of the Zener diode D, based on the unidirectional conductivity of the Zener diode D, the current will not flow through the Zener diode D. When the voltage between the gate G and the emitter E of the switch tube Q gradually increases, for example, to 12.5V, at this time, since the voltage applied across the Zener diode D is greater than the breakdown voltage of the Zener diode D, the Zener diode D is broken down, so that the voltage across the Zener diode D is roughly stabilized at a voltage value close to the breakdown voltage, for example, 12.3V. In this way, the voltage value between the gate and the emitter of the switch tube Q is stabilized at 12.3V, and the stable voltage value of 12.3V is less than the withstand voltage between the gate G and the emitter E of the switch tube Q, so that the gate G and the emitter E of the switch tube Q will not be broken down. Even if the driving voltage used to drive the switch tube Q changes, the voltage value between the gate G and the emitter E of the switch tube Q will still be stable at 12.3V, which can prevent the driving voltage from being greater than the withstand voltage of the gate and emitter of the switch tube Q, which may cause the gate and emitter of the switch tube Q to be broken down, thereby preventing damage to the switch tube and extending the life of the switch tube.

[0090] refer to Figure 7For a P-channel switch tube, the difference between the gate voltage of the switch tube Q and the emitter voltage of the switch tube Q is less than the turn-on voltage of the switch tube Q, and the switch tube Q can be turned on. In other words, when the switch tube Q is a P-channel switch tube, the gate voltage of the switch tube Q is lower than the emitter voltage. For a P-channel switch tube, the cathode of the voltage-stabilizing diode D designed in the present application is connected to the emitter of the switch tube, and the anode of the voltage-stabilizing diode D is connected to the gate of the switch tube, which can prevent the voltage value of the driving voltage used to drive the switch tube Q from being greater than the tolerance voltage of the gate voltage and emitter voltage of the switch tube Q, which may cause the gate and emitter of the switch tube Q to be broken down, thereby preventing damage to the switch tube Q and extending the life of the switch tube Q.

[0091] Exemplarily, assuming that the turn-on voltage of the switch tube Q is -3.3V, the withstand voltage between the gate and the emitter of the switch tube Q is -15V, and the breakdown voltage of the Zener diode D is 12V, when the voltage between the gate and the emitter of the switch tube Q is -4.0, since the voltage between the gate and the emitter of the switch tube Q is negative, and the voltage between the gate G and the emitter E of the switch tube Q is less than the turn-on voltage, the switch tube Q is turned on.

[0092] Since the cathode of the Zener diode D is connected to the emitter E of the switch tube Q, and the anode of the Zener diode D is connected to the gate G of the switch tube Q, the voltage value applied to both ends of the Zener diode D is 4.0V, and since the voltage of the emitter E connected to the cathode of the Zener diode D is greater than the voltage of the gate G connected to the anode of the Zener diode D, the current will not flow through the Zener diode D. When the voltage between the gate G and the emitter E of the switch tube Q gradually increases, for example, reaching -12.5V, at this time, since the voltage value applied to both ends of the Zener diode D is greater than the voltage value of the breakdown voltage of the Zener diode D, the Zener diode D is broken down, so that the voltage across the Zener diode is roughly stabilized at a voltage value close to the breakdown voltage, for example, 12.3V. In this way, the voltage value between the gate and the emitter of the switch tube Q is stabilized at 12.3V, and the stable voltage value is less than the withstand voltage between the gate and the emitter of the switch tube Q, so that the gate G and the emitter E of the switch tube Q will not be broken down. Even if the driving voltage used to drive the switch tube Q changes, the voltage value between the gate G and the emitter E of the switch tube Q will still be stable at 12.3V, which can prevent the driving voltage used to drive the switch tube Q from being greater than the tolerance voltage of the gate voltage and the emitter voltage of the switch tube Q, which may cause the gate and emitter of the switch tube Q to be broken down, thereby preventing damage to the switch tube and extending the life of the switch tube.

[0093] When the switch tube is a MOSFET, one end of the power device is the source. When the power device is an N-channel MOSFET, the anode of the Zener diode D is connected to the source of the power device, and the cathode of the Zener diode is connected to the gate of the power device. Figure 8 As shown; when the power device is a P-channel MOSFET, the cathode of the Zener diode D is connected to the source of the power device, and the anode of the Zener diode D is connected to the gate of the power device, as shown Fig. 9 shown.

[0094] Among them, the gate G of MOSFET is equivalent to the gate G of IGBT in the above figure, the source S of MOSFET is equivalent to the emitter E of IGBT in the above figure, and the drain D of MOSFET is equivalent to the collector C of IGBT in the above figure. The specific principle is the same as above. Figure 6 or Figure 7 Similar, for the sake of brevity, no further elaboration is given.

[0095] When the switch tube is a GTR, one end of the power device is the source. When the power device is an NPN type GTR, the anode of the Zener diode D is connected to the source of the power device, and the cathode of the Zener diode is connected to the base of the power device, such as Fig.10 As shown; when the power device is a PNP type GTR, the cathode of the Zener diode D is connected to the source of the power device, and the anode of the Zener diode D is connected to the base of the power device, as shown Fig.11 shown.

[0096] Among them, the base b of GTR is equivalent to the gate G of IGBT in the above figure, the emitter e of GTR is equivalent to the emitter E of IGBT in the above figure, and the collector c of GTR is equivalent to the collector C of IGBT in the above figure. The specific principle is the same as above. Figure 6 or Figure 7 Similar, for the sake of brevity, no further elaboration is given.

[0097] In one embodiment, Fig.12 As shown, the power module also includes a power supply circuit 330 and a driving circuit 340, one input end of the driving circuit 340 is connected to one end of the first resistance unit 311, the other input end of the driving circuit 340 is connected to the other end of the second resistance unit 312, the output end of the driving circuit 340 is connected to the control end, and the driving circuit 340 is used to convert the voltage across the resistance unit 310 into a pulse width modulation (PWM) wave output, and the voltage value across the resistance unit 310 is the voltage value corresponding to the high level signal of the PWM wave.

[0098] The power supply circuit 330 is used to: input a voltage value to the connection point between one end of the first resistor unit 311 and the input end of the driving circuit 340, and the voltage value of the series connection point of the first resistor unit 311 and the second resistor unit 312 is a first voltage value; when the voltage value of the series connection point of the first resistor unit 311 and the second resistor unit 312 changes, adjust the voltage value input to the connection point between the first resistor unit 311 and the input end of the driving circuit 340 so that the voltage value of the series connection point of the first resistor unit 311 and the second resistor unit 312 is stabilized to the first voltage value.

[0099] In the embodiment of the present application, the power supply circuit 330 can input a voltage value to the connection point between one end of the first resistance unit 311 and the input end of the driving circuit 340. When the ambient temperature of the switch tube Q changes suddenly, the resistance value of the temperature-sensitive resistor Rt changes, and the overall resistance value of the first resistance unit 311 and the second resistance unit 312 in series changes, thereby changing the voltage value of the series connection point of the first resistance unit 311 and the second resistance unit 312. At this time, the power supply circuit can adjust the voltage value input to the connection point between the first resistance unit 311 and the input end of the driving circuit 340 according to the voltage value of the series connection point of the first resistance unit 311 and the second resistance unit 312, so as to stabilize the voltage value of the series connection point of the first resistance unit 311 and the second resistance unit 312 to the first voltage value. Then, the voltage input to the driving circuit 340 changes, and accordingly, the high-level voltage corresponding to the PWM wave output by the driving circuit 340 also changes, that is, the driving voltage used to drive the switch tube Q changes, thereby preventing the gate and emitter of the power device from being broken down due to the reduced withstand voltage between the gate and emitter of the switching tube Q, thereby ensuring the reliable driving of the power device, thereby improving the reliability of driving the power device.

[0100] In an actual product, the power supply circuit 330 may include two output terminals Vo1 and Vo2, wherein the output terminal Vo1 is connected to a connection point between one end of the first resistance unit 311 and an input end of the driving circuit 340, and the output terminal Vo1 is used to input a voltage value to a connection point between one end of the first resistance unit 311 and the input end of the driving circuit 340; the output terminal Vo2 is connected to a series connection point between the first resistance unit 311 and the second resistance unit 312, and the output terminal Vo2 is used to collect a voltage value at the series connection point between the first resistance unit 311 and the second resistance unit 312.

[0101] Moreover, since the power supply circuit 330 and the drive circuit 340 are relatively independent, when an abnormality occurs in the power module, the power supply circuit 330 or the drive circuit 340 can be detected separately. Therefore, when an abnormality occurs in the power supply circuit 330 or the drive circuit 340, only one of the power supply circuit 330 or the drive circuit 340 needs to be replaced, which is convenient for subsequent detection and maintenance and improves subsequent maintainability.

[0102] In one implementation, the power supply circuit 330 and the drive circuit 340 may be integrated into one to form an integrated circuit 350, such as Fig.13 The output terminal Vo1' of the integrated circuit 350 is connected to the control terminal of the power device 320, the output terminal Vo2' is connected to one end of the first resistance unit 311, and the output terminal Vo3' is connected to the series connection point of the first resistance unit and the second resistance unit.

[0103] The output terminal Vo2' of the integrated circuit 350 is used to input a voltage value to one end of the first resistance unit 311. The output terminal Vo1' of the integrated circuit 350 is used to convert the voltage value output by the output terminal Vo2' into a PWM wave output, and the voltage value output by the output terminal Vo2' is a voltage value corresponding to the high-level signal of the PWM wave. The output terminal Vo3' of the integrated circuit 350 collects the voltage value of the series connection point of the first resistance unit 311 and the second resistance unit 312, so that the output terminal Vo2' of the integrated circuit adjusts the voltage value input to one end of the first resistance unit 311 according to the voltage value collected by the output terminal Vo3'. The specific adjustment process is similar to the above, and for the sake of brevity, it will not be repeated.

[0104] In addition, when the power supply circuit 330 and the drive circuit 340 can be integrated into one, the volume of the power module can be reduced, which is beneficial to the miniaturized design of the power module and is easy to install.

[0105] In one embodiment, Fig.14 As shown, the temperature sensitive resistor Rt is integrated in the power device.

[0106] In the embodiment of the present application, when the thermistor Rt is integrated into the power device, the temperature of the thermistor Rt is substantially consistent with the temperature of the switch tube Q. In other words, the temperature of the thermistor Rt can more accurately reflect the temperature of the switch tube Q, and the temperature of the thermistor Rt can be used to accurately reflect the temperature of the switch tube Q. Since the driving voltage used to drive the switch tube Q changes with the temperature of the thermistor Rt, when the temperature of the thermistor Rt can more accurately reflect the temperature of the switch tube Q, the driving voltage used to drive the switch tube Q can be more accurately controlled, thereby ensuring the reliable driving of the power device and improving the reliability of the driving of the power device.

[0107] Specifically, the above Figure 4For example, when the temperature of the switch tube Q is 50°, the thermistor Rt is integrated in the power device, that is, the thermistor Rt is close to the power device, and the temperature of the thermistor Rt is basically consistent with the temperature of the switch tube Q. For example, the temperature of the thermistor Rt is 49°, and the resistance of the thermistor Rt is the resistance corresponding to the temperature of 49°. In this way, the driving voltage for driving the switch tube Q is determined based on the corresponding resistance when the temperature of the thermistor Rt is 49°. Because the temperature of the thermistor Rt can more accurately reflect the temperature of the switch tube Q, the driving voltage for driving the switch tube Q can be more accurately controlled.

[0108] When the temperature of the switch tube Q is 50°, the thermistor Rt is far away from the power device, and the temperature of the thermistor Rt is actually quite different from the temperature of the switch tube Q. For example, the temperature of the thermistor Rt may be only 30°, so the resistance of the thermistor Rt is the resistance corresponding to the temperature of 30°. In this way, the driving voltage for driving the switch tube Q is determined based on the corresponding resistance when the temperature of the thermistor Rt is 30°. Because the temperature of the thermistor Rt cannot accurately reflect the temperature of the switch tube Q, the driving voltage for driving the switch tube Q deviates, resulting in a voltage deviation between the gate and emitter of the switch tube Q, thereby reducing the reliability of the switch tube Q drive.

[0109] In one embodiment, the power module further includes a fourth resistor R4 , which is connected in series between one end of the resistor unit 310 and the control end of the power device 320 .

[0110] In the present application embodiment, Fig.15 As shown, taking the power device as IGBT as an example, when the high-level voltage corresponding to the PWM wave output by the driving circuit 340 is relatively large, without the fourth resistor R4, the switch tube Q may be damaged. Exemplarily, assuming that the high-level voltage corresponding to the PWM wave output by the driving circuit 340 is 48V, without the fourth resistor R4, the gate current flowing into the switch tube Q is relatively large, and may be greater than the limiting current of the gate of the switch tube Q, thereby causing damage to the switch tube Q.

[0111] In the embodiment of the present application, a fourth resistor R4 is connected in series between one end of the resistor unit and the gate of the switch tube Q, and the gate current flowing into the switch tube Q is the high-level voltage corresponding to the PWM wave output by the drive circuit 340 and the resistance value of the fourth resistor R4. Even if the high-level voltage corresponding to the PWM wave output by the drive circuit 340 is relatively large, the fourth resistor R4 can increase the resistance value of the loop of the drive circuit 340 connected to the reference ground through the switch tube Q, thereby reducing the gate current flowing into the switch tube Q, thereby reducing the risk of damage to the switch tube Q.

[0112] Exemplarily, if the high-level voltage corresponding to the PWM wave output by the driving circuit 340 is 20V, the limiting current that the gate of the switch tube Q can withstand is 10A. If there is no fourth resistor R4, it is assumed that the on-resistance of the switch tube Q is 1Ω. In this case, the current flowing into the gate of the switch tube Q is 20÷1=20A, which is greater than the limiting current that the gate of the switch tube Q can withstand, and it is easy to cause damage to the switch tube Q. When the fourth resistor R4 is designed, and the resistance of the fourth resistor R4 is 19Ω. In this case, the current flowing into the gate of the switch tube Q is 20÷(19+1)=1A, and the current flowing into the gate of the switch tube Q is significantly reduced, thereby avoiding damage to the switch tube Q.

[0113] Similarly, when the power device is a MOSFET or a GTR, the function of the fourth resistor R4 is similar to that described above and will not be described in detail.

[0114] In addition, the present application also provides a charging device, which includes a charging module and a power module of any of the above embodiments, and the power module is used to control the charging module to transmit electric energy to the electric vehicle or stop transmitting electric energy.

[0115] For a detailed description of the power module, please refer to the relevant content above, which will not be repeated here.

[0116] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A power module, characterized in that: The power module includes a resistor unit and a power device, wherein the resistor unit is used to adjust a driving voltage for driving the power device to turn on or off; wherein, One end of the resistance unit is connected to the control end of the power device, the other end of the resistance unit is connected to one end of the power device, and the voltage across the two ends of the resistance unit is the driving voltage; The resistance unit includes a temperature-sensitive resistor, the resistance value of the temperature-sensitive resistor is related to the temperature of the power device, and the driving voltage is positively correlated with the temperature.

2. The power module according to claim 1, characterized in that: The power module further comprises a voltage regulator diode, one end of the voltage regulator diode is connected to the control end, and the other end of the voltage regulator diode is connected to the one end of the power device; The Zener diode is used for: When the driving voltage is greater than the breakdown voltage of the Zener diode, the voltage between the control terminal and the one end of the power device is stabilized to the breakdown voltage, and the breakdown voltage of the Zener diode is less than the absolute value of the breakdown voltage between the control terminal and the one end of the power device.

3. The power module according to claim 2, characterized in that: In the case where the power device is an N-channel switch tube or an NPN-type switch tube, the cathode of the voltage-stabilizing diode is connected to the control end, and the anode of the voltage-stabilizing diode is connected to the one end of the power device; In the case where the power device is a P-channel switch tube or a PNP type, the anode of the voltage regulator diode is connected to the control end, and the cathode of the voltage regulator diode is connected to the one end of the power device.

4. The power module according to claim 3, characterized in that: When the switch tube is an insulated gate bipolar transistor IGBT, the one end of the power device is an emitter; In the case where the switch tube is a metal-oxide semiconductor field effect transistor MOSFET or a power transistor GTR, the one end of the power device is a source.

5. The power module according to any one of claims 1 to 4, characterized in that: The resistance unit comprises a first resistance unit and a second resistance unit connected in series, one end of the first resistance unit is connected to the control end of the power device, the other end of the first resistance unit is connected to one end of the second resistance unit, the other end of the second resistance unit is connected to the one end of the power device, and the voltage value across the second resistance unit is a constant value; The first resistance unit includes a first resistor, and the second resistance unit includes a second resistor, a third resistor and the temperature sensitive resistor; The third resistor and the temperature-sensitive resistor are connected in series, the third resistor and the temperature-sensitive resistor connected in series are connected in parallel with the second resistor, and the resistance of the temperature-sensitive resistor is negatively correlated with the temperature.

6. The power module according to any one of claims 1 to 4, characterized in that: The resistance unit comprises a first resistance unit and a second resistance unit connected in series, one end of the first resistance unit is connected to the control end of the power device, the other end of the first resistance unit is connected to one end of the second resistance unit, the other end of the second resistance unit is connected to the one end of the power device, and the voltage value across the second resistance unit is a constant value; The first resistance unit includes a first resistor, a second resistor and the temperature-sensitive resistor, and the second resistance unit includes a third resistor; The second resistor and the temperature-sensitive resistor are connected in series, the second resistor and the temperature-sensitive resistor connected in series are connected in parallel with the first resistor, and the resistance value of the temperature-sensitive resistor is positively correlated with the temperature.

7. The power module according to claim 5 or 6, characterized in that: The power module also includes a power supply circuit and a drive circuit; One input end of the driving circuit is connected to the one end of the first resistance unit, the other input end of the driving circuit is connected to the other end of the second resistance unit, the output end of the driving circuit is connected to the control end, the driving circuit is used to convert the voltage across the resistance unit into a pulse width modulation PWM wave output, and the voltage value across the resistance unit is the voltage value corresponding to the high level signal of the PWM wave; The power supply circuit is used for: Inputting a voltage value to a connection point between the one end of the first resistance unit and the input end of the driving circuit, wherein a voltage value of a series connection point between the first resistance unit and the second resistance unit is a first voltage value; When the voltage value of the series connection point of the first resistance unit and the second resistance unit changes, the voltage value input to the connection point between the first resistance unit and the input end of the driving circuit is adjusted so that the voltage value of the series connection point of the first resistance unit and the second resistance unit is stabilized to the first voltage value.

8. The power module according to any one of claims 1 to 7, characterized in that: The temperature-sensitive resistor is integrated in the power device.

9. The power module according to any one of claims 1 to 8, characterized in that: The power module further includes a fourth resistor, which is connected in series between the one end of the resistor unit and the control end of the power device.

10. A charging device, characterized in that: The charging device comprises a charging module and a power module as claimed in any one of claims 1 to 9, wherein the power module is used to control the charging module to deliver electric energy to the electric vehicle or stop delivering electric energy.

Images