A radio frequency power amplifier circuit

Abstract

The present application relates to a kind of radio frequency power amplifier circuits, comprising: first impedance matching network, field effect transistor M1 and second impedance matching network;First impedance matching network, field effect transistor M1 and second impedance matching network are sequentially connected, the output end of first impedance matching network is used as the output end of radio frequency power amplifier circuit, the target power signal corresponding to the output end output is in the preset bandwidth range at the operating bandwidth, and the operating voltage corresponding to target power signal is obtained based on the impedance space corresponding to radio frequency power amplifier circuit in the modified resistance reactance hybrid continuous mode.The circuit can ensure that impedance variation ratio does not increase, and expand the impedance space of radio frequency power amplifier circuit, in turn widen the operating bandwidth of radio frequency power amplifier circuit, improve the power amplifier efficiency of radio frequency power amplifier circuit.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of radio frequency integrated circuit, and particularly relates to a radio frequency power amplifier circuit. BACKGROUND

[0002] With the development of communication application field, various systems also put forward new requirements for the performance of T / R components. T / R component is the abbreviation of Transmitter and Receiver, and generally refers to the part between video and antenna in a wireless transceiver system, that is, one end of the T / R component is connected with the antenna, and the other end is connected with the intermediate frequency processing unit to form a wireless transceiver system, and the function of the T / R component is to amplify, shift phase and attenuate the signal. As a functional unit in the T / R component, the radio frequency power amplifier is used to convert direct current power into a certain radio frequency power output. The larger the working bandwidth of the radio frequency power amplifier is, the better the working performance of the radio frequency power amplifier is. The working bandwidth of the radio frequency power amplifier refers to the frequency range in which the amplifier can transmit signals, and the range directly affects the amount of information that can be transmitted by the system. In wireless communication, the size of the bandwidth is a very important index, because it determines the capacity and performance of the communication system. The bandwidth of the radio frequency power amplifier is defined as the range in which the circuit meets the specific maximum and minimum values, and the range is the frequency interval in which the amplifier can provide effective gain.

[0003] However, with the development of communication technology, the working bandwidth of the existing radio frequency power amplifier cannot meet the different application requirements. SUMMARY

[0004] In order to solve the above problems in the prior art, the present application provides a radio frequency power amplifier circuit. The technical problem to be solved by the present application is solved by the following technical scheme:

[0005] The present invention provides a radio frequency power amplifier circuit, comprising: a first impedance matching network, a field effect transistor M1, and a second impedance matching network; the first impedance matching network, the field effect transistor M1, and the second impedance matching network are connected in sequence, the output end of the first impedance matching network is used as the output end of the radio frequency power amplifier circuit, and the input end of the second impedance matching network is used to receive an input first power signal; the second impedance matching network is used to match the impedance between the field effect transistor M1 and the input end of the second impedance matching network, so as to output a second power signal using the first power signal; the field effect transistor M1 is used to amplify the second power signal to obtain a third power signal; the first impedance matching network is used to match the impedance between the field effect transistor M1 and the output end of the first impedance matching network, so as to output a target power signal using the third power signal, the operating bandwidth corresponding to the target power signal is within a preset bandwidth range, and the operating voltage corresponding to the target power signal is obtained based on the impedance space corresponding to the radio frequency power amplifier circuit in a corrected resistive mixed continuous mode.

[0006] Compared with the prior art, the present invention has the following beneficial effects: In response to the problem that the operating bandwidth of existing RF power amplifiers cannot meet the requirements of different applications, the present invention provides a RF power amplifier circuit, which operates in a modified resistive-resistive hybrid continuous mode, and the operating bandwidth corresponding to the target power signal ultimately outputted is within a preset bandwidth range, which can meet different application requirements and improve the power amplification efficiency of the RF power amplifier circuit. Moreover, when the RF power amplifier circuit provided by the present invention is applied to a system containing a large number of T / R components, the improvement in the power amplification efficiency of the RF power amplifier circuit can further effectively reduce the power consumption of the T / R components, improve the heat dissipation of the T / R components, improve the working reliability of the T / R components, and ultimately reduce the power consumption of the entire system and strengthen the thermal management of the entire system. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 1 is a circuit connection diagram of a radio frequency power amplifier circuit provided in an embodiment of the present invention;

[0008] Figure 2 is the output power P corresponding to the RF power amplifier circuit in the modified continuous class F mode provided by the embodiment of the present invention. out , drain efficiency η follows the changes of auxiliary factor λ and resistance factor δ respectively;

[0009] Figure 3is a simulation example diagram of the real part of the fundamental frequency impedance Z1L changing with the auxiliary factor λ in the continuous F class mode corrected by the auxiliary factor λ and the continuous J class mode corrected by the auxiliary factor λ respectively provided by the embodiment of the present application;

[0010] Figure 4 is a specific component and connection relationship schematic diagram of the radio frequency power amplifier circuit provided by the embodiment of the present application;

[0011] Figure 5 is another specific component and connection relationship schematic diagram of the radio frequency power amplifier circuit provided by the embodiment of the present application;

[0012] Figure 6 is a simulation test comparison example diagram of the working efficiency and the working bandwidth expansion of the radio frequency power amplifier circuit provided by the embodiment of the present application. DETAILED DESCRIPTION

[0013] The present application will be further described below in conjunction with specific embodiments, but the embodiments of the present application are not limited thereto.

[0014] In the description of the present application, the terms "first", "second" are only used for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0015] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in the present application.

[0016] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art can understand and implement other variations of the disclosed embodiments by reviewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple situations. A single processor or other unit can implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0017] The radio frequency power amplifier circuit proposed in the present invention is now described in detail with reference to the accompanying drawings. Figure 1 FIG. 1 is a circuit connection diagram of a radio frequency power amplifier circuit provided by an embodiment of the present invention. Figure 1 As shown, the RF power amplifier circuit includes: a first impedance matching network, a field effect transistor M1, and a second impedance matching network; the first impedance matching network, the field effect transistor M1, and the second impedance matching network are connected in sequence, the output end of the first impedance matching network is used as the output end of the RF power amplifier circuit, and the input end of the second impedance matching network is used to receive the input first power signal; the second impedance matching network is used to match the impedance between the field effect transistor M1 and the input end of the second impedance matching network, so as to output the second power signal using the first power signal; the field effect transistor M1 is used to amplify the second power signal to obtain a third power signal; the first impedance matching network is used to match the impedance between the field effect transistor M1 and the output end of the first impedance matching network, so as to output the target power signal using the third power signal, the working bandwidth corresponding to the target power signal is within the preset bandwidth range, and the working voltage corresponding to the target power signal is obtained based on the impedance space corresponding to the RF power amplifier circuit under the modified resistive mixed continuous mode.

[0018] Here, the modified resistance-reactive hybrid continuous mode is generated by introducing auxiliary factors on the basis of the original resistance-reactive hybrid continuous mode. The original resistance-reactive hybrid continuous mode has the advantage of including more impedance solutions without changing the output power and efficiency of the power amplifier. The original resistance-reactive hybrid continuous mode refers to a mode in which the reactance factor (1+γsinθ) and the resistance factor (1+δcosθ) are added to the output voltage waveform of the B / J class to F class transistors in the RF power amplifier. The output voltage waveform of the RF power amplifier in the original resistance-reactive hybrid continuous mode satisfies the following formula:

[0019] V ds,RRHC =V dd(1-acos(θ)+bcos(3θ))(1-γsin(θ))(1+δcos(θ));

[0020] wherein V ds,RRHC is the drain voltage of the B / J to F class transistor, V dd is the amplitude of the drain voltage, a and b are coefficients of the hybrid continuous mode voltage waveform (wherein a=0, b=1 can obtain the voltage waveform expression of the continuous B / J class power amplifier; a=2 / √3, b=1 / 3√3 can obtain the drain voltage waveform of the continuous F class working mode), γ is an electric reactance factor, δ is an electric resistance factor, and θ is a phase angle of the current waveform.

[0021] Here, when the output end Ropt of the final stage transistor of the radio frequency power amplifier circuit is small, it is difficult to successfully apply the original resistance and reactance hybrid continuous mode, in order to solve the problem, the auxiliary factor λ is introduced to modify the resistance and reactance hybrid continuous mode. The output voltage waveform of the radio frequency power amplifier circuit under the modified resistance and reactance hybrid continuous mode satisfies the following formula:

[0022] V ds =(1-acos(θ)+bcos(3θ))(1-γsin(θ))(λ+δcos(θ));

[0023] wherein V ds is the normalized drain voltage corresponding to the B / J to F class transistor in the radio frequency power amplifier circuit under the modified resistance and reactance hybrid continuous mode, i.e. the working voltage corresponding to the target power signal, and λ is an auxiliary factor.

[0024] wherein the value range of γ is (-1, 1), the value range of δ is (0, 1), and the value range of a and b satisfies a-b=1.

[0025] Here, under the modified resistance and reactance hybrid continuous mode, the normalized drain current I ds of the B / J to F class transistor in the radio frequency power amplifier circuit remains a half-sine wave, and the normalized drain current I ds can be expressed as:

[0026] Here, under the modified resistance and reactance hybrid continuous mode, the output power P out of the B / J to F class transistor in the radio frequency power amplifier circuit can be expressed as: The drain efficiency η of the B / J to F class transistor can be expressed as:

[0027] Here, the impedance space corresponding to the radio frequency power amplifier circuit includes: a fundamental impedance Z1L, a second harmonic impedance Z2L and a third harmonic impedance Z3L. The fundamental impedance Z1L, the second harmonic impedance Z2L and the third harmonic impedance Z3L are respectively expressed as follows:

[0028]

[0029]

[0030] Z3L = ∞;

[0031] Wherein, j refers to a complex number, R 1,TL refers to an optimal load impedance.

[0032] To determine the value of the auxiliary factor λ, Figure 2 is the output power P out of the radio frequency power amplifier circuit corresponding to the modified continuous F class mode provided by the embodiment of the application, and the drain efficiency η changes with the auxiliary factor λ and the resistance factor δ. Figure 2 (a) in the figure is a simulation example graph of the output power P out of the radio frequency power amplifier circuit corresponding to the modified continuous F class mode, which changes with the auxiliary factor λ and the resistance factor δ; Figure 2 (b) in the figure is a simulation example graph of the drain efficiency η of the radio frequency power amplifier circuit corresponding to the modified continuous F class mode, which changes with the auxiliary factor λ and the resistance factor δ. As shown in (a) and (b) in the figure, Figure 2 when the auxiliary factor λ is less than (1+δ / a), the change amount of the output power P out is reduced, and when the auxiliary factor λ is greater than (1+δ / a), the change amount of the output power P out is increased, which can compensate for the reduction of the output power caused by δ≠0. Considering that the parasitic effect of the matching network element is serious at high frequency, it is impossible to maintain pure reactance at high harmonic, in order to reduce the design difficulty of the second harmonic impedance matching network and ensure that the efficiency of the transistor is greater than 60%, therefore, the value range of the resistance factor δ is selected as 0 to 0.3. And λ is greater than 1, and the value range of λ is (1+δ / a, 1.5).

[0033] Figure 3 is a simulation example graph of the real part of the fundamental impedance Z1L changing with the auxiliary factor λ in the modified continuous F class mode and the modified continuous J class mode using the auxiliary factor λ respectively. Wherein, Figure 3 the left side of the figure is a Smith circle graph of the real part of the fundamental impedance Z1L changing with the auxiliary factor λ in the modified continuous J class mode using the auxiliary factor λ, Figure 3The right side of the figure is a Smith chart showing the change of the real part of the fundamental frequency impedance Z1L with the auxiliary factor λ in the continuous class F mode after correction using the auxiliary factor λ. It should be noted that the closer the symbol graph in the Smith chart is to the center of the sphere, the smaller the impedance change ratio is. Figure 3 As shown in the figure, no matter in the modified continuous class F mode or the modified continuous class J mode, when λ = 1.5 and δ = 0.3, the real part of the fundamental frequency impedance Z1L increases and is closest to the center of the Smith chart; when the λ value remains unchanged, the smaller the δ value is, the closer to the center of the Smith chart; when the δ value remains unchanged, the larger the λ value is, the closer to the center of the Smith chart.

[0034] That is to say, by introducing the auxiliary factor λ, the real part of the fundamental frequency impedance Z1L can be increased while ensuring that the real part of the harmonic load impedance Z2L remains unchanged, thereby expanding the impedance space corresponding to the RF power amplifier circuit, so that the impedance conversion ratio does not increase when the output terminal Ropt of the final transistor of the RF power amplifier circuit is small, thereby improving the working performance of the RF power amplifier circuit.

[0035] It should be noted that in order to avoid the normalized drain voltage V ds The swing is more than 3 times the drain voltage amplitude V dd , thereby breaking down the transistor. After determining the value range of λ and δ, the value of the reactance factor γ is appropriately narrowed.

[0036] In combination with the above content, the specific composition and connection relationship of the RF power amplifier circuit are now explained.

[0037] In one possible implementation, Figure 4 FIG. 1 is a schematic diagram showing the specific composition and connection relationship of the radio frequency power amplifier circuit provided by an embodiment of the present invention. Figure 4 As shown, the first impedance matching network includes: microstrip line TL1, microstrip line TL2, microstrip line TL3, microstrip line TL4, microstrip line TL5, capacitor C1, capacitor C2, capacitor C3 and capacitor C4; microstrip line TL5, microstrip line TL4, microstrip line TL2 and capacitor C2 are connected in sequence; between the drain of field effect transistor M1 and the output end of the first impedance matching network; the source of field effect transistor M1 is grounded, and the gate of field effect transistor M1 is connected to the output end of the second impedance matching network; one end of capacitor C4 is connected between microstrip line TL5 and microstrip line TL4, and the other end is grounded; one end of microstrip line TL3 is connected between microstrip line TL4 and microstrip line TL2, and the other end and one end of capacitor C1 are both connected to drain voltage Vd, and the other end of capacitor C1 is grounded; one end of capacitor C3 is connected between microstrip line TL2 and capacitor C2, and the other end is grounded; one end of microstrip line TL1 is connected to one end of capacitor C2, and the other end is grounded.

[0038] It should be noted that the capacitors in the radio frequency power amplifier circuit are all MIM capacitors. MIM capacitor is a kind of parallel plate capacitor, which is composed of the top layer and the second layer of metal and the dielectric therebetween. Compared with ordinary capacitors, the dielectric layer of MIM capacitor is thinner, so the formed capacitor density is higher, the parasitic effect is smaller, and the precision is high. Through special process, the odd layer metal and the even layer metal can be connected respectively, so as to increase the capacitance per unit area. In addition, the field effect transistor in the radio frequency power amplifier circuit is a B / J class to F class transistor.

[0039] Here, in order to make the impedance of the reflection coefficient of the output end of the radio frequency power amplifier circuit at the second harmonic frequency and the impedance at the third harmonic frequency meet the second harmonic impedance Z2L and the third harmonic impedance Z3L, so that the capacitor C3 and the capacitor C4 provide short circuit points at the second harmonic frequency and the third harmonic frequency respectively. Due to the characteristics of MIM capacitor, and the frequency band of third harmonic frequency is close to the frequency band of second harmonic frequency, at this time when the capacitor C3 and the capacitor C4 are short-circuited at the low frequency of the second harmonic impedance, the third harmonic impedance is also at a relatively low impedance level.

[0040] Here, the microstrip line TL2, the microstrip line TL4 and the microstrip line TL5 in series play a role of adjusting the second harmonic impedance Z2L and the third harmonic impedance Z3L of the corresponding impedance space of the radio frequency power amplifier circuit, and the three microstrip lines also serve as the fundamental frequency matching element, together with the capacitor C2 and the microstrip line TL1, to adjust the fundamental frequency impedance Z1L. The microstrip line TL3 is used as a fundamental frequency matching element and a direct current power supply bias line, which is open at the low frequency of the second harmonic impedance Z2L. The point A in the first impedance matching network is the conjugate of the input source impedance of the first impedance matching network and the fundamental frequency matching point of the output impedance of the field effect transistor M1. Starting from point A, the fundamental frequency and harmonic matching impedance region matching of resistive and capacitive continuous inverse F class mode can be completed by optimizing the microstrip line TL4, the microstrip line TL5 and the capacitor C4. And from the other side of point A, the conjugate matching of the output end of the field effect transistor M1 can be realized by optimizing TL2 and TL3.

[0041] It should be understood that the "first impedance matching network" in the present application can also be referred to as a power stage matching network.

[0042] Please continue to refer to Figure 4, the source impedance of the output end of the field effect transistor M1 and the output impedance of the second impedance matching network need to be satisfied simultaneously, so it is necessary to determine that the second impedance matching network works in a suitable state first. In view of the fact that the impedance condition of the continuous inverse F class mode is relatively easy to obtain, the second impedance matching network is in the resistive-reactive continuous inverse F class mode to determine the constituent elements and connection relationship of the second impedance matching network. Specifically, the second impedance matching network comprises a microstrip line TL6, a microstrip line TL7, a microstrip line TL8, a microstrip line TL9, a microstrip line TL10, a capacitor C5, a capacitor C6, a capacitor C7 and a capacitor C8; the microstrip line TL6, the microstrip line TL8, the capacitor C7 and the microstrip line TL10 are connected in sequence between the gate of the field effect transistor M1 and the input end of the second impedance matching network; one end of the microstrip line TL9 is connected between the capacitor C7 and the microstrip line TL10, and the other end and one end of the capacitor C6 are both connected to the drain voltage Vd, the capacitor C6 and the capacitor C5 are connected in series and grounded; one end of the capacitor C8 is connected between the microstrip line TL8 and the capacitor C7, and the other end is grounded; one end of the microstrip line TL7 is connected between the microstrip line TL6 and the microstrip line TL8, and the other end and one end of the capacitor C5 are both connected to the gate voltage Vgs1.

[0043] It should be understood that the second impedance matching network in the present application can also be referred to as an inter-stage matching network.

[0044] Please continue to refer to Figure 4 , the radio frequency power amplifier circuit further comprises a first inter-stage stabilization network; the first inter-stage stabilization network is connected between the gate of the field effect transistor M1 and the output end of the second impedance matching network; and the first inter-stage stabilization network is used for stabilizing the working state of the field effect transistor M1.

[0045] In another possible implementation, on the basis of Figure 4 , the present application further comprises other circuit components. Figure 5 is another schematic diagram of the specific components and connection relationship of the radio frequency power amplifier circuit provided by the embodiment of the present application. As Figure 5As shown, here, the radio frequency power amplifier circuit further comprises: a third impedance matching network, a fourth impedance matching network, a field effect transistor M2 and a field effect transistor M3; the fourth impedance matching network, the field effect transistor M3, the third impedance matching network and the field effect transistor M2 are connected in sequence; an input end of the fourth impedance matching network is used as an input end of the radio frequency power amplifier circuit; the field effect transistor M2 is connected with the second impedance matching network; the fourth impedance matching network is used for receiving an input power signal and matching impedance between the input end of the fourth impedance matching network and the field effect transistor M3, so as to output a fourth power signal by using the input power signal; the field effect transistor M3 is used for amplifying the fourth power signal to obtain a fifth power signal; the third impedance matching network is used for matching impedance between the field effect transistor M2 and the field effect transistor M3, so as to output a sixth power signal by using the fifth power signal; and the field effect transistor M2 is used for amplifying the sixth power signal to obtain the first power signal.

[0046] Specifically, please continue to refer to Figure 5 The third impedance matching network comprises: a microstrip line TL11, a microstrip line TL12, a microstrip line TL13, a microstrip line TL14, a microstrip line TL15, a capacitor C9, a capacitor C10 and a capacitor C11; the microstrip line TL13, the capacitor C11, the microstrip line TL14 and the microstrip line TL15 are connected in sequence between the drain of the field effect transistor M3 and the gate of the field effect transistor M2; the source of the field effect transistor M3 and the source of the field effect transistor M2 are both grounded; the gate of the field effect transistor M3 is connected with the output end of the fourth impedance matching network, and the gate of the field effect transistor M2 is connected with the output end of the third impedance matching network; one end of the microstrip line TL11 is connected between the microstrip line TL13 and the capacitor C11, and the other end and one end of the capacitor C9 are both connected to the drain voltage Vd; the capacitor C9 and the capacitor C10 are connected in series and grounded, and the other end of the capacitor C10 and one end of the microstrip line TL12 are both connected to the gate voltage Vgs2; the other end of the microstrip line TL12 is connected between the microstrip line TL14 and the microstrip line TL15.

[0047] It should be understood that the "third impedance matching network" in the present application can also be referred to as a pre-driver stage matching network.

[0048] Please continue to refer to Figure 5The fourth impedance matching network comprises: a microstrip line TL16, a microstrip line TL17, a microstrip line TL18, a capacitor C12 and a capacitor C13; the capacitor C13 and the microstrip line TL18 are sequentially connected between the input end of the fourth impedance matching network and the gate of the field effect transistor M3; one end of the microstrip line TL17 is connected between the capacitor C13 and the microstrip line TL18, and the other end and one end of the capacitor C12 are both connected to the gate voltage Vgs3, and the other end of the capacitor C12 is grounded; one end of the capacitor C13 is also connected to one end of the microstrip line TL16, and the other end of the microstrip line TL16 is grounded.

[0049] It should be noted that the field effect transistors in the radio frequency power amplifier circuit do not have specific models, and are all prepared by using a GaAs pHEMT process.

[0050] Please continue to refer to Figure 5 The radio frequency power amplifier circuit further comprises: a second inter-stage stabilization network; the second inter-stage stabilization network is connected between the output end of the third impedance matching network and the gate of the field effect transistor M2, and the second inter-stage stabilization network is used to stabilize the working state of the field effect transistor M2.

[0051] Here, by using the inter-stage stabilization network, the signal output by the transistor can be prevented from returning to burn the transistor or being superimposed with the signal inside the transistor to form an oscillator.

[0052] In view of the problem that the working bandwidth of the existing radio frequency power amplifier cannot meet different application requirements, the present application provides a radio frequency power amplifier circuit, which works in a modified resistance-reactance hybrid continuous mode, has the advantages of ensuring that the impedance variation ratio does not increase, widening the impedance space of the radio frequency power amplifier circuit, thereby widening the working bandwidth of the radio frequency power amplifier circuit, and improving the power amplifier efficiency of the radio frequency power amplifier circuit.

[0053] To verify the working efficiency and the expansion degree of the working bandwidth of the radio frequency power amplifier circuit provided by the present application, Figure 6 is a simulation test comparison example diagram of the working efficiency and the expansion of the working bandwidth of the radio frequency power amplifier circuit provided by the embodiment of the present application. Figure 6 (a) in is a comparison diagram of the S parameters (i.e. simulation results) corresponding to the radio frequency power amplifier circuit and the S parameters corresponding to the test results; Figure 6 (b) in is a comparison diagram of the saturation output power and the efficiency (i.e. simulation results) corresponding to the radio frequency power amplifier circuit and the saturation output power and the efficiency corresponding to the test results; Figure 6 (c) in is a power scan comparison diagram of the simulation results and the test results at different frequencies. As shown in Figure 6 (a), the gain flatness of the radio frequency power amplifier circuit is improved, the gain flatness of the amplifier, i.e. the gain response in the entire working bandwidth, is 1dB within the frequency band, the input port and the output port reflection coefficients of the radio frequency power amplifier circuit are both not more than -10dB, which indicates that the radio frequency power amplifier circuit has good matching. As shown in Figure 6 (b), within the preset bandwidth range of 17-24GHz, the average saturation output power is kept as 0.5W within the band, and the average power additional efficiency is greater than 42%. Figure 6 (c), the power amplifier saturation zone gain of the radio frequency power amplifier circuit is greater than 15dB, and the power additional efficiency (English abbreviation PAE) within the working frequency band of the radio frequency power amplifier circuit is higher.

[0054] The above is a further detailed description of the present application in combination with specific preferred embodiments, and the specific implementation of the present application cannot be limited to these descriptions. For ordinary skilled persons in the technical field to which the present application belongs, some simple deductions or replacements can be made without departing from the concept of the present application, and all of them should be regarded as falling within the protection scope of the present application.

Claims

1. A radio frequency power amplifier circuit, characterized by Comprise: A first impedance matching network, a field effect transistor M1 and a second impedance matching network; The first impedance matching network, the field effect transistor M1 and the second impedance matching network are connected in sequence, the output end of the first impedance matching network is used as the output end of the radio frequency power amplifier circuit, and the input end of the second impedance matching network is used to receive the input first power signal; The second impedance matching network is used to match the impedance between the field effect transistor M1 and the input end of the second impedance matching network, so as to output a second power signal by using the first power signal; The field effect transistor M1 is used to amplify the second power signal to obtain a third power signal; The first impedance matching network is used to match the impedance between the field effect transistor M1 and the output end of the first impedance matching network, so as to output a target power signal by using the third power signal, the working bandwidth corresponding to the target power signal is within a preset bandwidth range, and the working voltage corresponding to the target power signal is obtained based on the impedance space corresponding to the radio frequency power amplifier circuit in the corrected resistance-reactance hybrid continuous mode; The first impedance matching network comprises: a microstrip line TL1, a microstrip line TL2, a microstrip line TL3, a microstrip line TL4, a microstrip line TL5, a capacitor C1, a capacitor C2, a capacitor C3 and a capacitor C4; The microstrip line TL5, the microstrip line TL4, the microstrip line TL2 and the capacitor C2 are connected in sequence between the drain of the field effect transistor M1 and the output end of the first impedance matching network; the source of the field effect transistor M1 is grounded, and the gate of the field effect transistor M1 is connected with the output end of the second impedance matching network; One end of the capacitor C4 is connected between the microstrip line TL5 and the microstrip line TL4, and the other end is grounded; One end of the microstrip line TL3 is connected between the microstrip line TL4 and the microstrip line TL2, and the other end and one end of the capacitor C1 are both connected to the drain voltage Vd, and the other end of the capacitor C1 is grounded; One end of the capacitor C3 is connected between the microstrip line TL2 and the capacitor C2, and the other end is grounded; One end of the microstrip line TL1 is connected with one end of the capacitor C2, and the other end is grounded; The second impedance matching network comprises: a microstrip line TL6, a microstrip line TL7, a microstrip line TL8, a microstrip line TL9, a microstrip line TL10, a capacitor C5, a capacitor C6, a capacitor C7 and a capacitor C8; The microstrip line TL6, the microstrip line TL8, the capacitor C7 and the microstrip line TL10 are connected in sequence between the gate of the field effect transistor M1 and the input end of the second impedance matching network; One end of the microstrip line TL9 is connected between the capacitor C7 and the microstrip line TL10, and the other end and one end of the capacitor C6 are both connected to the drain voltage Vd, and the capacitor C6 and the capacitor C5 are connected in series and grounded; One end of the capacitor C8 is connected between the microstrip line TL8 and the capacitor C7, and the other end is grounded; One end of the microstrip line TL7 is connected between the microstrip line TL6 and the microstrip line TL8, and the other end is connected to one end of the capacitor C5, both of which are connected to the gate voltage Vgs1.

2. The radio frequency power amplifier circuit of claim 1, wherein, The radio frequency power amplifier circuit further comprises a first inter-stage stabilization network; the first inter-stage stabilization network is connected between the gate of the field effect transistor M1 and the output end of the second impedance matching network; the first inter-stage stabilization network is used for stabilizing the working state of the field effect transistor M1.

3. The radio frequency power amplifier circuit of claim 1, wherein, The radio frequency power amplifier circuit further comprises a third impedance matching network, a fourth impedance matching network, a field effect transistor M2 and a field effect transistor M3; The fourth impedance matching network, the field effect transistor M3, the third impedance matching network and the field effect transistor M2 are connected in sequence; the input end of the fourth impedance matching network is used as the input end of the radio frequency power amplifier circuit; the field effect transistor M2 is connected with the second impedance matching network; The fourth impedance matching network is used for receiving an input power signal and matching the impedance between the input end of the fourth impedance matching network and the field effect transistor M3, so as to output a fourth power signal by using the input power signal; The field effect transistor M3 is used for amplifying the fourth power signal to obtain a fifth power signal; The third impedance matching network is used for matching the impedance between the field effect transistor M2 and the field effect transistor M3, so as to output a sixth power signal by using the fifth power signal; The field effect transistor M2 is used for amplifying the sixth power signal to obtain the first power signal.

4. The radio frequency power amplifier circuit of claim 3, wherein, The third impedance matching network comprises a microstrip line TL11, a microstrip line TL12, a microstrip line TL13, a microstrip line TL14, a microstrip line TL15, a capacitor C9, a capacitor C10 and a capacitor C11; The microstrip line TL13, the capacitor C11, the microstrip line TL14 and the microstrip line TL15 are connected in sequence between the drain of the field effect transistor M3 and the gate of the field effect transistor M2; the source of the field effect transistor M3 and the source of the field effect transistor M2 are both grounded; the gate of the field effect transistor M3 is connected with the output end of the fourth impedance matching network, and the gate of the field effect transistor M2 is connected with the output end of the third impedance matching network; One end of the microstrip line TL11 is connected between the microstrip line TL13 and the capacitor C11, and the other end is connected to one end of the capacitor C9, both of which are connected to the drain voltage Vd; The capacitor C9 and the capacitor C10 are connected in series and grounded, and the other end of the capacitor C10 and one end of the microstrip line TL12 are both connected to the gate voltage Vgs2; The other end of the microstrip line TL12 is connected between the microstrip line TL14 and the microstrip line TL15.

5. The radio frequency power amplifier circuit of claim 3, wherein, The fourth impedance matching network comprises a microstrip line TL16, a microstrip line TL17, a microstrip line TL18, a capacitor C12 and a capacitor C13; The capacitor C13 and the microstrip line TL18 are connected between the input end of the fourth impedance matching network and the gate of the field effect transistor M3 in sequence; One end of the microstrip line TL17 is connected between the capacitor C13 and the microstrip line TL18, and the other end and one end of the capacitor C12 are both connected to the gate voltage Vgs3, and the other end of the capacitor C12 is grounded; One end of the capacitor C13 is also connected to one end of the microstrip line TL16, and the other end of the microstrip line TL16 is grounded.

6. The radio frequency power amplifier circuit of claim 4, wherein, The radio frequency power amplifier circuit further comprises a second interstage stabilization network; the second interstage stabilization network is connected between the output end of the third impedance matching network and the gate of the field effect transistor M2, and the second interstage stabilization network is used to stabilize the working state of the field effect transistor M2.

7. The radio frequency power amplifier circuit of claim 4, wherein, The radio frequency power amplifier circuit further comprises a third interstage stabilization network; the third interstage stabilization network is connected between the output end of the fourth impedance matching network and the gate of the field effect transistor M3; the third interstage stabilization network is used to stabilize the working state of the field effect transistor M3.

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