Photoelectric device

Abstract

An optoelectronic device is disclosed. The photoelectric device comprises a substrate, an anode, a cathode and at least one light-emitting layer, wherein the anode, the cathode and the light-emitting layer are arranged on the substrate; the light-emitting device comprises a light-emitting layer and a specific first film layer, the first film layer can be used as a sealing layer or a thin film packaging layer in the device, and particularly, a down-conversion material is added to at least part of the region in the first film layer in a doped mode, so that the down-conversion material can absorb part of light emitted by the light-emitting layer of the device and convert the light into light with longer wavelength. The technical effect of multi-color light emitting is achieved on the basis of not additionally adding a device layer, the process is simplified, the cost is low, and higher light emitting efficiency is achieved. The invention further discloses a light-emitting panel comprising the photoelectric device.

Description

Technical Field

[0001] The present invention relates to a photovoltaic device comprising a specific first film layer, and more particularly to a photovoltaic device in which the first film layer is doped with a down-conversion photoluminescent material. Background Art

[0002] Technologies such as low-light laser treatment and photobiomodulation (PBM) emerged in the mid-to-late 20th century, both using light as a therapeutic tool in the medical field (Michael R. Hamblin, Ying-ying Huang, Handbook of Photomedicine, CRC Press). Recent studies have shown that light treatments ranging from red to near-infrared can promote the regeneration of collagen and skin cells, and can be used for wrinkle reduction, wound healing, and scar removal (Chan Hee Nam et al., Dermatologic Surgery, 2017, 43:371-380; Daniel Barolet, Semin Cutan Med Surg, 2008, 27:227-238; Yongmin Jeon, Adv. Mater. Technol. 2018, 1700391). In vitro studies have shown that light in the visible to near-infrared spectral region can trigger collagen synthesis in the skin. Additionally, red light therapy is a useful way to reduce redness and inflammation, particularly helping to minimize the signs of aging. Specific red light wavelengths target the deeper layers of the skin and help regenerate tissues like collagen and skin cells. Red light therapy has even been shown to be therapeutic for injured athletes or those with chronic conditions like arthritis. Red light not only reduces inflammation in the skin's surface, but also deeper. In recent years, numerous light therapy trials using red and near-infrared light have shown that these types of light can also have slimming and weight-loss benefits.

[0003] Near-infrared light also has a heating effect, which can heat and destroy cells, thereby stimulating cell regeneration, and has certain effects in removing wrinkles and tightening the skin. Figure 1a This is a microscopic image of fat cells irradiated with 635nm light, showing their cell walls breaking down and shrinking. Different wavelengths have different chromophores and affect tissue differently. Wavelengths generally refer to the color they are used in, including blue, green, red, and near-infrared. Generally speaking, longer wavelengths penetrate deeper into tissue. Figure 1bThis study shows the penetration depth of light at different wavelengths into skin tissue. It shows that light with a wavelength of 600-1000 nm can penetrate the dermis to a depth of 2-4 mm below the skin (Daniel Barolet, Semin Cutan Med Surg, 27:227-238, 2008). When determining the effective wavelength of a phototherapy light source, in addition to penetration depth, absorption by cellular tissue must also be considered. At a wavelength of 600 nm, blood hemoglobin (Hb) is the primary barrier to photon absorption. Furthermore, at a wavelength of 1000 nm, water absorption becomes very strong. Figure 1c A study demonstrating the absorption of different wavelengths by various physiological substances (such as water, hemoglobin, oxyhemoglobin, and melanin) (Daniel Barolet, Semin Cutan Med Surg, 27:227-238, 2008) shows that the optimal wavelength window for penetrating skin tissue without damage is roughly between 600 and 1400 nm. Combining the relationship between wavelength and penetration depth, it is clear that red and near-infrared light with wavelengths between 600 and 1000 nm are the best choices for non-invasive phototherapy.

[0004] Phototherapy products currently on the market generally use two light sources: lasers and LEDs. Lasers are coherent light sources with high energy that directly hit subcutaneous cells to achieve therapeutic effects. Lasers are point or line light sources and require repeated local treatments. The high intensity of laser light can easily cause burns, making them unsuitable for large-area treatments. In recent years, LED light sources have been widely used in medical aesthetics products, such as phototherapy masks and hair growth caps. However, LEDs are also point light sources and, like lasers, face the same dilemma of large-area treatments. In order to convert the point light source of LEDs into a surface light source, they are generally spread across the entire area to be treated in an array. LED light sources have high light intensity density and are accompanied by a large amount of heat dissipation. Heat sink components are usually integrated to help reduce the temperature, increasing the volume and weight, making them unsuitable for use as components of wearable medical devices.

[0005] On the other hand, OLED light sources are both surface and cold light sources, and their thin and lightweight nature makes them easy to integrate into flexible substrates, making them an ideal light source for wearable applications. Related patent applications have also covered various fields in recent years. For example, CN205108772U, CN204951964U, and US2012155057A1 all disclose the use of OLED light sources as wearable products for medical treatment. The inventor's previous patent applications CN111481833A, CN111514466A, CN111544774A, and CN112754764A respectively mentioned the use of OLEDs to prepare hair growth caps, slimming and shaping garments, phototherapy socks, and band-aids. This indicates that phototherapy products using OLEDs as light sources are ideal home beauty products.

[0006] Ideal phototherapy products are expected to emit both red and near-infrared light simultaneously. Common methods for achieving multi-color luminescence include combining panels of different colors or introducing multiple luminescent layers or materials within the device. However, near-infrared OLEDs are currently limited by the development of near-infrared luminescent materials, resulting in low luminous efficiency and difficulty in commercial application. However, the research and development of visible light, such as red and green luminescent materials, is relatively mature in the field, and down-conversion photoluminescent materials have the function of converting short-wavelength light into long-wavelength light. Therefore, using down-conversion materials to convert visible light into near-infrared light has also become a viable method for achieving near-infrared luminescence.

[0007] US Patent No. 11145692B2 discloses a device comprising a down-conversion layer for down-converting red light into near-infrared light. This layer exists as a single functional layer within the device. The patent does not disclose the incorporation of down-conversion materials into the device in a doping manner, particularly in the device's capping layer or organic thin film encapsulation layer. Nor does it address the effects of doping down-conversion photoluminescent materials into the corresponding device layers.

[0008] CN108281568A discloses a method for preparing a top-emitting white organic electroluminescent device and a device produced by this method. The white OLED device disclosed in this application includes a microstructured quantum dot down-conversion film and specifically discloses a method for preparing this microstructured quantum dot down-conversion film. However, this down-conversion film is disposed outside the device encapsulation layer. There is no disclosure of doping the down-conversion material into the device, nor is there any attention to the effects of doping the down-conversion photoluminescent material into the corresponding device layer. Furthermore, the microstructured quantum dot down-conversion film disclosed in this application is first prepared separately on a silicon-based microstructured template, then removed from the template and applied to the blue-light OLED device, rather than being directly formed as a thin film on the OLED device. This preparation method is complex and costly.

[0009] In summary, how to develop a new type of optoelectronic device that can achieve multi-color luminescence without adding additional device layers while ensuring high efficiency of the device, especially a method that can achieve high efficiency and low cost of near-infrared luminescence, is a technical problem that people in this field urgently need to solve. Summary of the Invention

[0010] The present invention aims to provide a novel optoelectronic device to solve at least some of the above problems.

[0011] According to one embodiment of the present invention, a photovoltaic device is disclosed, comprising:

[0012] substrate,

[0013] an anode, a cathode and at least one light-emitting layer disposed on a substrate;

[0014] first film layer;

[0015] a second film layer;

[0016] wherein the light emitted by the at least one light-emitting layer comprises a first peak wavelength;

[0017] The first film layer has at least one region comprising a first material and a second material, wherein the second material is doped in the first material at a molar ratio of 1-99%;

[0018] The excitation wavelength of the second material includes the first peak wavelength emitted by the at least one light-emitting layer, and the peak wavelength of the output light of the second material at the excitation wavelength is a second peak wavelength, and the second peak wavelength is ≥ the first peak wavelength + 50 nm;

[0019] The first film layer is arranged on the cathode or below the anode;

[0020] The second film layer comprises an inorganic material; the second film layer is arranged on a side of the first film layer away from the cathode or the anode.

[0021] According to one embodiment of the present invention, part of the light energy emitted by the at least one light-emitting layer is irradiated on a region of the first film layer containing the second material.

[0022] According to one embodiment of the present invention, the second material comprises one or more of the following: quantum dot material, phosphor material, organic light-emitting material, and perovskite material.

[0023] According to one embodiment of the present invention, the second material is an organic small molecule material or a quantum dot material.

[0024] According to one embodiment of the present invention, the organic small molecule material can be used as an OLED light-emitting material.

[0025] According to one embodiment of the present invention, the organic small molecule material is a phosphorescent material.

[0026] According to one embodiment of the present invention, the phosphorescent material is a metal complex having M(L a ) m (L b ) n (L c ) q The general formula of

[0027] Wherein, the metal M is selected from metals with a relative atomic mass greater than 40;

[0028] L a , L b and L c are respectively the first ligand, the second ligand and the third ligand coordinated with the metal M, L a , L b , L c Can be the same or different;

[0029] L a , L b and L c can optionally be linked to form multidentate ligands;

[0030] m is 1, 2 or 3; n is 0, 1 or 2; q is 0, 1 or 2; the sum of m, n, q is equal to the oxidation state of metal M; when m is greater than or equal to 2, multiple L a Can be the same or different; when n is 2, the two L b Can be the same or different; when q is 2, the two L c Can be the same or different;

[0031] Ligand L a It has the structure shown in Formula 2:

[0032]

[0033] in,

[0034] Ring D is selected from a 5-membered heteroaromatic ring or a 6-membered heteroaromatic ring;

[0035] Ring F is selected from a 5-membered unsaturated carbocyclic ring, a benzene ring, a 5-membered heteroaromatic ring or a 6-membered heteroaromatic ring;

[0036] Ring B is selected from a 5-membered unsaturated carbocyclic ring, a benzene ring, a 5-membered heteroaromatic ring or a 6-membered heteroaromatic ring;

[0037] Ring D and Ring F via U a and U b condensed;

[0038] U a and U b Each occurrence is identically or differently selected from C or N;

[0039] R' d , R' f Each occurrence of the same or different means mono-, poly- or no-substitution;

[0040] R' d , R' f , R uEach occurrence is identically or differently selected from the group consisting of hydrogen, deuterium, halogen, substituted or unsubstituted alkyl having 1 to 20 carbon atoms, substituted or unsubstituted cycloalkyl having 3 to 20 ring carbon atoms, substituted or unsubstituted heteroalkyl having 1 to 20 carbon atoms, substituted or unsubstituted heterocyclyl having 3 to 20 ring atoms, substituted or unsubstituted aralkyl having 7 to 30 carbon atoms, substituted or unsubstituted alkoxy having 1 to 20 carbon atoms, substituted or unsubstituted aryloxy having 6 to 30 carbon atoms, substituted or unsubstituted alkene having 2 to 20 carbon atoms a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a substituted or unsubstituted alkylsilyl group having 3 to 20 carbon atoms, a substituted or unsubstituted arylsilyl group having 6 to 20 carbon atoms, a substituted or unsubstituted alkylgermanyl group having 3 to 20 carbon atoms, a substituted or unsubstituted arylgermanyl group having 6 to 20 carbon atoms, a substituted or unsubstituted amino group having 0 to 20 carbon atoms, an acyl group, a carbonyl group, a carboxylic acid group, an ester group, a cyano group, an isocyano group, a hydroxyl group, a mercapto group, a sulfinyl group, a sulfonyl group, a phosphino group, and combinations thereof;

[0041] Adjacent substituent R' d , R' f , R u can optionally be linked to form a ring;

[0042] Ligand L b , L c Each occurrence is identically or differently selected from the group consisting of:

[0043]

[0044]

[0045] in,

[0046] R a1 , R b1 and R c1 Each occurrence is the same or different and represents mono-, poly-, or unsubstituted;

[0047] X b Each occurrence is identical or different and is selected from the group consisting of: O, S, Se, NR N1 and CR X1 R X2 ;

[0048] X c and X d Each occurrence is identically or differently selected from the group consisting of: O, S, Se and NR N2 ;

[0049] G is selected, at each occurrence, identically or differently, from the group consisting of a single bond, O, S, and Se;

[0050] R a1 , R b1 , R c1 , R N1 , R N2 , R X1 and R X2 Each occurrence is identically or differently selected from the group consisting of hydrogen, deuterium, halogen, substituted or unsubstituted alkyl having 1 to 20 carbon atoms, substituted or unsubstituted cycloalkyl having 3 to 20 ring carbon atoms, substituted or unsubstituted heteroalkyl having 1 to 20 carbon atoms, substituted or unsubstituted heterocyclyl having 3 to 20 ring atoms, substituted or unsubstituted aralkyl having 7 to 30 carbon atoms, substituted or unsubstituted alkoxy having 1 to 20 carbon atoms, substituted or unsubstituted aryloxy having 6 to 30 carbon atoms, substituted or unsubstituted alkenyl having 2 to 20 carbon atoms, substituted or unsubstituted an alkynyl group having 2 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a substituted or unsubstituted alkylsilyl group having 3 to 20 carbon atoms, a substituted or unsubstituted arylsilyl group having 6 to 20 carbon atoms, a substituted or unsubstituted alkylgermanyl group having 3 to 20 carbon atoms, a substituted or unsubstituted arylgermanyl group having 6 to 20 carbon atoms, a substituted or unsubstituted amino group having 0 to 20 carbon atoms, an acyl group, a carbonyl group, a carboxylic acid group, an ester group, a cyano group, an isocyano group, a hydroxyl group, a mercapto group, a sulfinyl group, a sulfonyl group, a phosphino group, and combinations thereof;

[0051] Adjacent substituent R a1 , R b1 , R c1 , R N1 , R N2 , R X1 and R X2 Can optionally be linked to form a ring.

[0052] In this context, adjacent substituents R' d , R' f , R u can be optionally connected to form a ring, which is intended to indicate that when a substituent R' d , substituent R' f , substituent R u When adjacent substituent groups, such as adjacent substituents R' d Between adjacent substituents R' f Between and adjacent substituents R u Between adjacent substituents R' dWith R' f Between adjacent substituents R' d With R u Between, and adjacent substituents R' f With R u Between, any one or more of these adjacent substituent groups can be connected to form a ring. Obviously, when there is a substituent R' d , substituent R' f , substituent R u When , these substituent groups may not be linked to form a ring.

[0053] In this embodiment, the adjacent substituent R a1 , R b1 , R c1 , R N1 , R N2 , R X1 and R X2 can be optionally linked to form a ring, which is intended to represent adjacent substituent groups, for example, two substituents R a1 Between the two substituents R b1 Between the two substituents R c1 Between, the substituent R a1 and R b1 Between, the substituent R a1 and R c1 Between, the substituent R b1 and R c1 Between, the substituent R a1 and R N1 Between, the substituent R b1 and R N1 Between, the substituent R a1 and R X1 Between, the substituent R a1 and R X2 Between, the substituent R b1 and R X1 Between, the substituent R b1 and R X2 Between, the substituent R a1 and R N2 Between, the substituent R b1 and R N2 Between, and R X1 and R X2 Any one or more of these substituent groups may be linked to form a ring. For example, The adjacent substituent R a1 , R b1 Can optionally be linked to form rings, which may form one or more of the following structures including but not limited to: Wherein, W is selected from O, S, Se, NR w or CR w R w wherein said R w , R a ', R b 'The definition of R a1 Obviously, these substituents may not be connected to form a ring.

[0054] According to one embodiment of the present invention, the ligand L a It has the structure shown in Formula 3:

[0055]

[0056] in,

[0057] Ring D is selected from a 5-membered heteroaromatic ring or a 6-membered heteroaromatic ring;

[0058] Ring F is selected from a 5-membered unsaturated carbocyclic ring, a benzene ring, a 5-membered heteroaromatic ring or a 6-membered heteroaromatic ring;

[0059] Ring D and Ring F via U a and U b condensed;

[0060] U a and U b Each occurrence is identically or differently selected from C or N;

[0061] R' d , R' f Each occurrence of the same or different means mono-, poly- or no-substitution;

[0062] Each time U1-U4 appears, it is selected from CR u or N;

[0063] R' d , R' f , R uEach occurrence is identically or differently selected from the group consisting of hydrogen, deuterium, halogen, substituted or unsubstituted alkyl having 1 to 20 carbon atoms, substituted or unsubstituted cycloalkyl having 3 to 20 ring carbon atoms, substituted or unsubstituted heteroalkyl having 1 to 20 carbon atoms, substituted or unsubstituted heterocyclyl having 3 to 20 ring atoms, substituted or unsubstituted aralkyl having 7 to 30 carbon atoms, substituted or unsubstituted alkoxy having 1 to 20 carbon atoms, substituted or unsubstituted aryloxy having 6 to 30 carbon atoms, substituted or unsubstituted alkene having 2 to 20 carbon atoms a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a substituted or unsubstituted alkylsilyl group having 3 to 20 carbon atoms, a substituted or unsubstituted arylsilyl group having 6 to 20 carbon atoms, a substituted or unsubstituted alkylgermanyl group having 3 to 20 carbon atoms, a substituted or unsubstituted arylgermanyl group having 6 to 20 carbon atoms, a substituted or unsubstituted amino group having 0 to 20 carbon atoms, an acyl group, a carbonyl group, a carboxylic acid group, an ester group, a cyano group, an isocyano group, a hydroxyl group, a mercapto group, a sulfinyl group, a sulfonyl group, a phosphino group, and combinations thereof;

[0064] Adjacent substituent R' d , R' f , R u Can optionally be linked to form a ring.

[0065] According to one embodiment of the present invention, the ligand L a Having a structure as shown in Formula 2 or Formula 3, and the ligand L a The triplet state is greater than or equal to 500nm.

[0066] According to one embodiment of the present invention, the ligand L a Having a structure as shown in Formula 2 or Formula 3, and the ligand L a The triplet state is greater than or equal to 600nm.

[0067] According to one embodiment of the present invention, the ligand L a Having a structure as shown in Formula 2 or Formula 3, and the ligand L a The triplet state is greater than or equal to 650nm.

[0068] According to one embodiment of the present invention, in Formula 2 and Formula 3, ring D is a 6-membered heteroaromatic ring, and ring F is a benzene ring or a 6-membered heteroaromatic ring.

[0069] According to one embodiment of the present invention, in Formula 2 and Formula 3, ring D is a 6-membered heteroaromatic ring, and ring F is a 5-membered heteroaromatic ring or a 5-membered unsaturated carbon ring.

[0070] According to one embodiment of the present invention, in Formula 2 and Formula 3, ring D is a 6-membered heteroaromatic ring, ring F is a benzene ring or a 6-membered heteroaromatic ring, and two R' f Connected to form a ring, connected to form a 6-membered aromatic ring or a 6-membered heteroaromatic ring.

[0071] According to one embodiment of the present invention, in Formula 2 and Formula 3, Ring D is a 6-membered heteroaromatic ring, Ring F is a 5-membered heteroaromatic ring or a 5-membered unsaturated carbon ring, and the two R' f Connected to form a 6-membered aromatic ring or a 6-membered heteroaromatic ring.

[0072] According to one embodiment of the present invention, in Formula 3, at least two of U1-U4 are selected from CR u , and the two R u Connect into a ring.

[0073] According to one embodiment of the present invention, in Formula 3, U3 and U4 are selected from CR u , and the two R u Connect into a ring.

[0074] According to one embodiment of the present invention, in Formula 3, U3 and U4 are selected from CR u , and the two R u Connected to form a 6-membered aromatic ring or a 6-membered heteroaromatic ring.

[0075] According to one embodiment of the present invention, in Formula 2 and Formula 3, the two R' f Connected into a ring and / or two R' d Ring and / or two R u Form a ring.

[0076] According to one embodiment of the present invention, in Formula 2 and Formula 3, the two R' f Connected to form a 5-membered unsaturated carbocyclic ring, a 5-membered heteroaromatic ring or a 6-membered aromatic ring.

[0077] According to one embodiment of the present invention, in Formula 2 and Formula 3, R' d , R' f 、R u At least one or two groups of adjacent substituents are connected to form a ring. For example, two substituents R' d Connected to form a ring, or two substituents R' f Connected to form a ring, or two substituents R u Connected to form a ring, or substituent R' d With substituent R' f Connected to form a ring, or substituent R' d With substituent R u Connected to form a ring, or substituent R' f With substituent Ru Connected to form a ring, or two substituents R' d Two substituents R' are connected to form a ring f Connected to form a ring, or two substituents R' d When two substituents R are connected to form a ring u Connected to form a ring, or two substituents R' f When two substituents R are connected to form a ring u Connected to form a ring, substituent R' f With substituent R u When two substituents R are connected to form a ring u Connected to form a ring, or substituent R d With substituent R u When two substituents R are connected to form a ring u Connect to form a ring; R' d , R' f 、R u A similar situation occurs when more adjacent substituents are connected to form a ring. The ring formed when any two of the above substituents are connected to form a ring is preferably a 5-membered unsaturated carbocyclic ring, a 5-membered heteroaromatic ring or a 6-membered aromatic ring.

[0078] According to one embodiment of the present invention, the ligand L b Has the following structure:

[0079]

[0080] Among them, R Ⅰ to R Ⅶeach independently selected from the group consisting of hydrogen, deuterium, halogen, substituted or unsubstituted alkyl having 1 to 20 carbon atoms, substituted or unsubstituted cycloalkyl having 3 to 20 ring carbon atoms, substituted or unsubstituted heteroalkyl having 1 to 20 carbon atoms, substituted or unsubstituted heterocyclyl having 3 to 20 ring atoms, substituted or unsubstituted aralkyl having 7 to 30 carbon atoms, substituted or unsubstituted alkoxy having 1 to 20 carbon atoms, substituted or unsubstituted aryloxy having 6 to 30 carbon atoms, substituted or unsubstituted alkenyl having 2 to 20 carbon atoms, substituted or unsubstituted alkyl having 2 to 30 carbon atoms, substituted or unsubstituted alkynyl groups having 6 to 20 carbon atoms, substituted or unsubstituted aryl groups having 6 to 30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3 to 30 carbon atoms, substituted or unsubstituted alkylsilyl groups having 3 to 20 carbon atoms, substituted or unsubstituted arylsilyl groups having 6 to 20 carbon atoms, substituted or unsubstituted alkylgermanyl groups having 3 to 20 carbon atoms, substituted or unsubstituted arylgermanyl groups having 6 to 20 carbon atoms, substituted or unsubstituted amino groups having 0 to 20 carbon atoms, acyl groups, carbonyl groups, carboxylic acid groups, ester groups, cyano groups, isocyano groups, thiol groups, sulfinyl groups, sulfonyl groups, phosphino groups, and combinations thereof.

[0081] According to one embodiment of the present invention, R Ⅰ -R Ⅲ At least one of them is selected from substituted or unsubstituted alkyl having 1 to 20 carbon atoms, substituted or unsubstituted cycloalkyl having 3 to 20 ring carbon atoms, substituted or unsubstituted heteroalkyl having 1 to 20 carbon atoms, or a combination thereof; and / or R Ⅳ -R Ⅵ At least one of the groups is selected from a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 ring carbon atoms, a substituted or unsubstituted heteroalkyl group having 1 to 20 carbon atoms, or a combination thereof.

[0082] According to one embodiment of the present invention, R Ⅰ -R Ⅲ At least two of the R groups are selected, at each occurrence, identically or differently, from substituted or unsubstituted alkyl groups having 1 to 20 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 20 ring carbon atoms, substituted or unsubstituted heteroalkyl groups having 1 to 20 carbon atoms, or combinations thereof; and / or R Ⅳ -R Ⅵ At least two of the groups are, at each occurrence, identically or differently selected from substituted or unsubstituted alkyl groups having 1 to 20 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 20 ring carbon atoms, substituted or unsubstituted heteroalkyl groups having 1 to 20 carbon atoms, or combinations thereof.

[0083] According to one embodiment of the present invention, RⅠ -R Ⅲ At least two of the R groups are selected, at each occurrence, identically or differently, from substituted or unsubstituted alkyl groups having 2 to 20 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 20 ring carbon atoms, substituted or unsubstituted heteroalkyl groups having 2 to 20 carbon atoms, or combinations thereof; and / or R Ⅳ -R Ⅵ At least two of the groups are, at each occurrence, identically or differently selected from substituted or unsubstituted alkyl groups having 2 to 20 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 20 ring carbon atoms, substituted or unsubstituted heteroalkyl groups having 2 to 20 carbon atoms, or combinations thereof.

[0084] According to one embodiment of the present invention, the phosphorescent material is an Ir complex, a Pt complex or an Os complex.

[0085] According to one embodiment of the present invention, the phosphorescent material is an Ir complex having Ir(L a )(L b )(L c )、Ir(L a )2(L b )、Ir(L a )(L b )2、Ir(L a )2(L c ) or Ir(L a )(L c )Any structure shown in 2.

[0086] According to one embodiment of the present invention, the ligand L a The compound has a structure as shown in Formula 2 or Formula 3 and comprises at least one structural unit selected from the group consisting of a 6-membered and 6-membered aromatic ring, a 6-membered and 6-membered heteroaromatic ring, a 6-membered and 5-membered aromatic ring and a 6-membered and 5-membered heteroaromatic ring.

[0087] According to one embodiment of the present invention, the ligand L a The compound has a structure as shown in Formula 2 or Formula 3 and includes at least one structural unit selected from the group consisting of naphthalene, phenanthrene, quinoline, isoquinoline and azaphenanthrene.

[0088] According to one embodiment of the present invention, the second material may be selected from the group consisting of but not limited to the following structures:

[0089]

[0090]

[0091]

[0092] According to one embodiment of the present invention, the second material may also be selected from the group consisting of but not limited to the following structures:

[0093]

[0094]

[0095]

[0096]

[0097] According to one embodiment of the present invention, the second material is an indium phosphide quantum dot material or a tin sulfide quantum dot material.

[0098] According to one embodiment of the present invention, the quantum yield of the second material is ≥30%.

[0099] According to one embodiment of the present invention, the quantum yield of the second material is ≥50%.

[0100] According to one embodiment of the present invention, the quantum yield of the second material is ≥70%.

[0101] According to one embodiment of the present invention, the quantum yield of the second material is ≥80%.

[0102] According to one embodiment of the present invention, the quantum yield of the second material is ≥90%.

[0103] According to an embodiment of the present invention, the first material is a polymer material.

[0104] According to one embodiment of the present invention, the first material is a polymer material having water and oxygen barrier properties.

[0105] According to an embodiment of the present invention, the first material is an organic macromolecular polymer.

[0106] According to an embodiment of the present invention, the first material and the second material are mixed in the form of a solution.

[0107] According to an embodiment of the present invention, the second material is doped into the first material in a molar ratio of 10-99%.

[0108] According to an embodiment of the present invention, the second material is doped into the first material in a molar ratio of 10-90%.

[0109] According to an embodiment of the present invention, the second material is doped into the first material in a molar ratio of 20-70%.

[0110] According to an embodiment of the present invention, the maximum excitation wavelength of the second material is between 500-650 nm.

[0111] According to an embodiment of the present invention, the maximum excitation wavelength of the second material is between 550-650 nm.

[0112] According to an embodiment of the present invention, the maximum excitation wavelength of the second material is between 600-630 nm.

[0113] According to one embodiment of the present invention, the first peak wavelength is between 500-650 nm.

[0114] According to one embodiment of the present invention, the first peak wavelength is between 550-650 nm.

[0115] According to one embodiment of the present invention, the first peak wavelength is between 600-630 nm.

[0116] According to one embodiment of the present invention, the second peak wavelength is greater than 650 nm.

[0117] According to one embodiment of the present invention, the second peak wavelength is greater than 700 nm.

[0118] According to one embodiment of the present invention, the second peak wavelength is greater than 750 nm.

[0119] According to one embodiment of the present invention, the second peak wavelength is between 750-1400 nm.

[0120] According to one embodiment of the present invention, the second peak wavelength is ≥ (the first peak wavelength + 70 nm).

[0121] According to one embodiment of the present invention, the second peak wavelength is ≥ (the first peak wavelength + 100 nm).

[0122] According to an embodiment of the present invention, at least one region in the first film layer does not contain the second material.

[0123] According to one embodiment of the present invention, the optoelectronic device further comprises at least two light-emitting layers.

[0124] According to one embodiment of the present invention, the light-emitting layer comprises at least one phosphorescent material.

[0125] According to one embodiment of the present invention, the first film layer has at least one region containing a third material, the excitation wavelength of the third material includes the first peak wavelength, and the peak wavelength of its output light is a third peak wavelength, and the third peak wavelength is ≥ the first peak wavelength.

[0126] According to one embodiment of the present invention, the third peak wavelength is ≥ (the first peak wavelength + 50 nm).

[0127] According to one embodiment of the present invention, the third peak wavelength is different from the second peak wavelength and / or the third material excitation wavelength is different from the second material excitation wavelength.

[0128] According to an embodiment of the present invention, the second film layer is in direct contact with the first film layer.

[0129] According to an embodiment of the present invention, the first film layer is in direct contact with at least one of the cathode and the anode.

[0130] According to one embodiment of the present invention, the first film layer is an organic thin film encapsulation layer.

[0131] According to one embodiment of the present invention, the second film layer is an inorganic thin film encapsulation layer.

[0132] According to one embodiment of the present invention, the photoelectric device further comprises a third film layer, wherein the third film layer comprises an inorganic material; the third film layer is disposed on a side of the first film layer close to the cathode or the anode.

[0133] According to one embodiment of the present invention, the optoelectronic device further comprises a third film layer comprising an inorganic material; the third film layer is in direct contact with the first film layer and is disposed on a side of the first film layer close to the cathode or anode.

[0134] According to one embodiment of the present invention, the third film layer is an inorganic thin film encapsulation layer.

[0135] According to one embodiment of the present invention, the substrate is selected from one or more of the following: glass, plastic, and silicon wafer.

[0136] According to an embodiment of the present invention, the first film layer is formed by preparing the first material and the second material by a solution process.

[0137] For another purpose, the present invention also discloses another optoelectronic device, comprising: a substrate, an anode disposed on the substrate, a cathode, at least one light-emitting layer, and a first film layer;

[0138] wherein the light emitted by the at least one light-emitting layer comprises a first peak wavelength;

[0139] The first film layer has at least one region comprising a first material and a second material, wherein the second material is doped in the first material at a molar ratio of 1-99%; the optical refractive index of the first material in the wavelength range of 500-650 nm is greater than or equal to 1.7;

[0140] The excitation wavelength of the second material includes the first peak wavelength emitted by the at least one light-emitting layer, and the peak wavelength of the output light of the second material at this excitation wavelength is a second peak wavelength, and the second peak wavelength is ≥ the first peak wavelength + 50nm,

[0141] The first film layer is arranged on the cathode; the light transmittance of the cathode is greater than 30%, and the reflectivity of the anode is greater than 50%.

[0142] According to an embodiment of the present invention, the reflectivity of the anode is greater than 50%.

[0143] According to an embodiment of the present invention, the reflectivity of the anode is greater than 80%.

[0144] According to an embodiment of the present invention, the reflectivity of the anode is greater than 90%.

[0145] According to one embodiment of the present invention, the light transmittance of the cathode is greater than 50%.

[0146] According to one embodiment of the present invention, part of the light energy emitted by the at least one light-emitting layer is irradiated on a region of the first film layer containing the second material.

[0147] According to one embodiment of the present invention, the second material comprises one or more of the following: quantum dot material, phosphor material, organic light-emitting material, and perovskite material.

[0148] According to one embodiment of the present invention, the second material is an organic small molecule material or a quantum dot material.

[0149] According to one embodiment of the present invention, the organic small molecule material can be used as an OLED light-emitting material.

[0150] According to one embodiment of the present invention, the organic small molecule material is a phosphorescent material.

[0151] According to one embodiment of the present invention, the phosphorescent material is a metal complex having M(L a ) m (L b ) n (Lc ) q The general formula: a ) m (L b ) n (L c ) q The specific limited range is as described in the above embodiment.

[0152] According to one embodiment of the present invention, the ligand L a It has a structure as shown in Formula 2 or Formula 3. The specific structures and limited ranges of Formula 2 and Formula 3 are as described in the above embodiments.

[0153] According to one embodiment of the present invention, the phosphorescent material is an Ir complex, a Pt complex or an Os complex.

[0154] According to one embodiment of the present invention, the phosphorescent material is an Ir complex having Ir(L a )(L b )(L c )、Ir(L a )2(L b )、Ir(L a )(L b )2、Ir(L a )2(L c ) or Ir(L a )(L c )2, wherein L a , L b, , L c The structure and scope are as described in the above embodiment.

[0155] According to one embodiment of the present invention, the ligand L a The compound has a structure as shown in Formula 2 or Formula 3 and comprises at least one structural unit selected from the group consisting of a 6-membered and 6-membered aromatic ring, a 6-membered and 6-membered heteroaromatic ring, a 6-membered and 5-membered aromatic ring and a 6-membered and 5-membered heteroaromatic ring.

[0156] According to one embodiment of the present invention, the ligand L a The compound has a structure as shown in Formula 2 or Formula 3 and includes at least one structural unit selected from the group consisting of naphthalene, phenanthrene, quinoline, isoquinoline and azaphenanthrene.

[0157] According to one embodiment of the present invention, the second material may be selected from the group including but not limited to the specific compounds listed in the above embodiments.

[0158] According to one embodiment of the present invention, the second material is an indium phosphide quantum dot material or a tin sulfide quantum dot material.

[0159] According to one embodiment of the present invention, the quantum yield of the second material is ≥30%.

[0160] According to one embodiment of the present invention, the quantum yield of the second material is ≥50%.

[0161] According to one embodiment of the present invention, the quantum yield of the second material is ≥70%.

[0162] According to one embodiment of the present invention, the quantum yield of the second material is ≥80%.

[0163] According to one embodiment of the present invention, the quantum yield of the second material is ≥90%.

[0164] According to one embodiment of the present invention, the first material is selected from organic small molecule materials.

[0165] According to one embodiment of the present invention, within the wavelength range of 500 nm-650 nm, the optical refractive index of the first material is greater than or equal to 1.8.

[0166] According to an embodiment of the present invention, within the wavelength range of 500 nm-650 nm, the optical refractive index of the first material is greater than or equal to 1.9.

[0167] According to one embodiment of the present invention, the first material may be selected from the group consisting of but not limited to the following structures:

[0168]

[0169]

[0170]

[0171]

[0172] According to an embodiment of the present invention, the first material and the second material are mixed in a thermal evaporation form.

[0173] According to an embodiment of the present invention, the second material is doped into the first material in a molar ratio of 10-99%.

[0174] According to an embodiment of the present invention, the second material is doped into the first material in a molar ratio of 10-90%.

[0175] According to an embodiment of the present invention, the second material is doped into the first material in a molar ratio of 20-70%.

[0176] According to an embodiment of the present invention, the maximum excitation wavelength of the second material is between 500-650 nm.

[0177] According to an embodiment of the present invention, the maximum excitation wavelength of the second material is between 550-650 nm.

[0178] According to an embodiment of the present invention, the maximum excitation wavelength of the second material is between 600-630 nm.

[0179] According to one embodiment of the present invention, the first peak wavelength is between 500-650 nm.

[0180] According to one embodiment of the present invention, the first peak wavelength is between 550-650 nm.

[0181] According to one embodiment of the present invention, the first peak wavelength is between 600-630 nm.

[0182] According to one embodiment of the present invention, the second peak wavelength is greater than 650 nm.

[0183] According to one embodiment of the present invention, the second peak wavelength is greater than 700 nm.

[0184] According to one embodiment of the present invention, the second peak wavelength is greater than 750 nm.

[0185] According to one embodiment of the present invention, the second peak wavelength is between 750-1400 nm.

[0186] According to one embodiment of the present invention, the second peak wavelength is ≥ (the first peak wavelength + 70 nm).

[0187] According to one embodiment of the present invention, the second peak wavelength is ≥ (the first peak wavelength + 100 nm).

[0188] According to an embodiment of the present invention, at least one region in the first film layer does not contain the second material.

[0189] According to one embodiment of the present invention, the optoelectronic device further comprises at least two light-emitting layers.

[0190] According to one embodiment of the present invention, the light-emitting layer comprises at least one phosphorescent material.

[0191] According to one embodiment of the present invention, the first film layer has at least one region containing a third material, the excitation wavelength of the third material includes the first peak wavelength, and the peak wavelength of its output light is a third peak wavelength, and the third peak wavelength is ≥ the first peak wavelength.

[0192] According to one embodiment of the present invention, the third peak wavelength is ≥ (the first peak wavelength + 50 nm).

[0193] According to one embodiment of the present invention, the third peak wavelength is different from the second peak wavelength and / or the third material excitation wavelength is different from the second material excitation wavelength.

[0194] According to one embodiment of the present invention, the first film layer is a capping layer.

[0195] According to one embodiment of the present invention, the first film layer is in direct contact with at least one of the cathode or the anode.

[0196] According to one embodiment of the present invention, the substrate is selected from one or more of the following: glass, plastic, and silicon wafer.

[0197] According to an embodiment of the present invention, the first film layer is formed by co-evaporation of the first material and the second material.

[0198] According to one embodiment of the present invention, a light-emitting panel is also disclosed, which includes the optoelectronic device as described in any of the above embodiments.

[0199] The novel optoelectronic device disclosed in the present invention includes a specific first film layer, which can be used as a capping layer or encapsulation layer in the device. In particular, by adding a down-conversion material in the form of doping to at least a portion of the first film layer, it can absorb the light emitted by a portion of the device's light-emitting layer and convert it into light with a longer wavelength, thereby achieving the technical effect of multi-color luminescence without adding additional device layers, simplifying the process, reducing costs, and having higher luminous efficiency. Those skilled in the art can adjust the doping concentration of the second material (down-conversion material) or select a second material with a different PLQY (preferably, PLQY ≥ 30%) as needed to obtain the desired multi-color luminescence, such as simultaneously emitting high-efficiency visible light (especially orange, yellow, and red light) and near-infrared light. Therefore, the novel optoelectronic device of the present invention has great application prospects in the field of phototherapy. BRIEF DESCRIPTION OF THE DRAWINGS

[0200] Figure 1a This is a microscope image of fat cells irradiated with 635nm light, where the cell walls break down and the cells shrink.

[0201] Figure 1b It is a coordinate diagram of the penetration depth of light of different wavelengths into skin tissue.

[0202] Figure 1c It is a graph of the absorption of light of different wavelengths by different physiological substances (such as water, hemoglobin, oxyhemoglobin and melanin).

[0203] Figure 2a Schematic diagram of the structure of the optoelectronic device 100 of the present invention.

[0204] Figure 2b Schematic diagram of the structure of the optoelectronic device 101 of the present invention.

[0205] Figure 3 Schematic diagram of the structure of the optoelectronic device 200 of the present invention.

[0206] Figure 4a 4 is a schematic structural diagram of the optoelectronic device 400 of the present invention.

[0207] Figure 4b 4 is a schematic structural diagram of the optoelectronic device 401 of the present invention.

[0208] Figure 5 Schematic diagram of the structure of the optoelectronic device 500 of the present invention.

[0209] Figure 6 This is the emission spectrum of compound 1 at an excitation wavelength of 500 nm. DETAILED DESCRIPTION

[0210] Definition of Substituent Terms

[0211] Halogen or halide - as used herein, includes fluorine, chlorine, bromine and iodine.

[0212] Alkyl - as used herein, includes straight chain and branched chain alkyl groups. The alkyl group may be an alkyl group having 1 to 20 carbon atoms, preferably an alkyl group having 1 to 12 carbon atoms, and more preferably an alkyl group having 1 to 6 carbon atoms. Examples of alkyl groups include methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, neopentyl, 1-methylpentyl, 2-methylpentyl, 1-pentylhexyl, 1-butylpentyl, 1-heptyloctyl, 3-methylpentyl. Among the above, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, neopentyl and n-hexyl are preferred. In addition, the alkyl group may be optionally substituted.

[0213] Cycloalkyl - as used herein, includes cyclic alkyl groups. Cycloalkyl groups can be cycloalkyl groups having 3 to 20 ring carbon atoms, preferably cycloalkyl groups having 4 to 10 carbon atoms. Examples of cycloalkyl groups include cyclobutyl, cyclopentyl, cyclohexyl, 4-methylcyclohexyl, 4,4-dimethylcyclohexyl, 1-adamantyl, 2-adamantyl, 1-norbornyl, 2-norbornyl, and the like. Of the above, cyclopentyl, cyclohexyl, 4-methylcyclohexyl, and 4,4-dimethylcyclohexyl are preferred. In addition, the cycloalkyl group may be optionally substituted.

[0214] Heteroalkyl - As used herein, a heteroalkyl group comprises one or more carbon atoms in the alkyl chain substituted with a heteroatom selected from the group consisting of nitrogen, oxygen, sulfur, selenium, phosphorus, silicon, germanium, and boron atoms. The heteroalkyl group may be a heteroalkyl group having 1 to 20 carbon atoms, preferably a heteroalkyl group having 1 to 10 carbon atoms, and more preferably a heteroalkyl group having 1 to 6 carbon atoms. The example of heteroalkyl includes methoxymethyl, ethoxymethyl, ethoxyethyl, methylthiomethyl, ethylthiomethyl, ethylthioethyl, methoxymethoxymethyl, ethoxymethoxymethyl, ethoxyethoxyethyl, hydroxymethyl, hydroxyethyl, hydroxypropyl, mercaptomethyl, mercaptoethyl, mercaptopropyl, aminomethyl, aminoethyl, aminopropyl, dimethylaminomethyl, trimethylgermanylmethyl, trimethylgermanylethyl, trimethylgermanylisopropyl, dimethylethylgermanylmethyl, dimethylisopropylgermanylmethyl, tert-butyldimethylgermanylmethyl, triethylgermanylmethyl, triethylgermanylethyl, triisopropylgermanylmethyl, triisopropylgermanylethyl, trimethylsilylmethyl, trimethylsilylethyl, trimethylsilylisopropyl, triisopropylsilylmethyl, triisopropylsilylethyl. In addition, heteroalkyl can be optionally substituted.

[0215] Alkenyl - as used herein, encompasses straight chain, branched chain, and cyclic olefin groups. Alkenyl groups can be alkenyl groups containing 2 to 20 carbon atoms, preferably alkenyl groups having 2 to 10 carbon atoms. Examples of alkenyl groups include ethenyl, propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1,3-butadienyl, 1-methylvinyl, styryl, 2,2-diphenylvinyl, 1,2-diphenylvinyl, 1-methylallyl, 1,1-dimethylallyl, 2-methylallyl, 1-phenylallyl, 2-phenylallyl, 3-phenylallyl, 3,3-diphenylallyl, 1,2-dimethylallyl, 1-phenyl-1-butenyl, 3-phenyl-1-butenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cycloheptenyl, cycloheptatrienyl, cyclooctenyl, cyclooctatetraenyl, and norbornenyl. Additionally, alkenyl groups can be optionally substituted.

[0216] Alkynyl - as used herein, encompasses straight chain alkynyl groups. Alkynyl groups can be alkynyl groups comprising 2 to 20 carbon atoms, preferably alkynyl groups having 2 to 10 carbon atoms. Examples of alkynyl groups include ethynyl, propynyl, propargyl, 1-butynyl, 2-butynyl, 3-butynyl, 1-pentynyl, 2-pentynyl, 3,3-dimethyl-1-butynyl, 3-ethyl-3-methyl-1-pentynyl, 3,3-diisopropyl-1-pentynyl, phenylethynyl, phenylpropynyl, etc. Among the above, ethynyl, propynyl, propargyl, 1-butynyl, 2-butynyl, 3-butynyl, 1-pentynyl, phenylethynyl, etc. are preferred. In addition, alkynyl groups can be optionally substituted.

[0217] Aryl or aromatic group - As used herein, both non-fused and fused systems are contemplated. The aryl group can be an aryl group having 6 to 30 carbon atoms, preferably an aryl group having 6 to 20 carbon atoms, and more preferably an aryl group having 6 to 12 carbon atoms. Examples of aryl groups include phenyl, biphenyl, terphenyl, triphenylene, tetraphenylene, naphthalene, anthracene, phenanthren, fluorene, pyrene, Perylene and azulene, preferably phenyl, biphenyl, terphenyl, triphenylene, fluorene and naphthalene. Examples of non-fused aryl groups include phenyl, biphenyl-2-yl, biphenyl-3-yl, biphenyl-4-yl, p-terphenyl-4-yl, p-terphenyl-3-yl, p-terphenyl-2-yl, m-terphenyl-4-yl, m-terphenyl-3-yl, m-terphenyl-2-yl, o-tolyl, m-tolyl, p-tolyl, p-(2-phenylpropyl)phenyl, 4'-methylbiphenyl, 4"-tert-butyl-p-terphenyl-4-yl, o-cumyl, m-cumyl, p-cumyl, 2,3-xylyl, 3,4-xylyl, 2,5-xylyl, mesityl and m-quaterphenyl. In addition, the aryl group may be optionally substituted.

[0218] Heterocyclic group or heterocycle - as used herein, non-aromatic cyclic groups are contemplated. Non-aromatic heterocyclic groups include saturated heterocyclic groups having 3-20 ring atoms and unsaturated non-aromatic heterocyclic groups having 3-20 ring atoms, wherein at least one ring atom is selected from the group consisting of nitrogen, oxygen, sulfur, selenium, silicon, phosphorus, germanium and boron atoms, and preferred non-aromatic heterocyclic groups are those having 3 to 7 ring atoms, including at least one heteroatom such as nitrogen, oxygen, silicon or sulfur. Examples of non-aromatic heterocyclic groups include oxiranyl, oxetanyl, tetrahydrofuranyl, tetrahydropyranyl, dioxopentanyl, dioxanyl, aziridinyl, dihydropyrrolyl, tetrahydropyrrolyl, piperidinyl, oxazolidinyl, morpholinyl, piperazinyl, oxepinyl, thiepinyl, azepine and tetrahydrothiol. Additionally, heterocyclyl groups may be optionally substituted.

[0219] Heteroaryl - As used herein, non-fused and fused heteroaromatic groups may contain from 1 to 5 heteroatoms, at least one of which is selected from the group consisting of nitrogen, oxygen, sulfur, selenium, silicon, phosphorus, germanium, and boron. Heteroaryl also refers to heteroaryl. The heteroaryl group may have from 3 to 30 carbon atoms, preferably from 3 to 20 carbon atoms, and more preferably from 3 to 12 carbon atoms. Suitable heteroaryl groups include dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indole, carbazole, pyridine, indole, pyrrolopyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxatriazole, dioxazole, thiadiazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, oxazine, oxathiazine, oxadiazine, indole, benzimidazole, indazole, indazine, benzoxazole, benzisoxazole, benzothiazole, quinoline, isoquinoline, In some embodiments, the heteroaryl group comprises an oxadiazole, an isocyanine ...

[0220] Alkoxy - as used herein, is represented by -O-alkyl, -O-cycloalkyl, -O-heteroalkyl, or -O-heterocyclyl. Examples and preferred examples of alkyl, cycloalkyl, heteroalkyl, and heterocyclyl are the same as those described above. The alkoxy group may be an alkoxy group having 1 to 20 carbon atoms, preferably an alkoxy group having 1 to 6 carbon atoms. Examples of alkoxy groups include methoxy, ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, cyclopropyloxy, cyclobutyloxy, cyclopentyloxy, cyclohexyloxy, tetrahydrofuranyloxy, tetrahydropyranyloxy, methoxypropyloxy, ethoxyethyloxy, methoxymethyloxy, and ethoxymethyloxy. In addition, the alkoxy group may be optionally substituted.

[0221] Aryloxy - As used herein, it is represented by -O-aryl or -O-heteroaryl. Examples and preferred examples of aryl and heteroaryl groups are the same as those described above. The aryloxy group may be an aryloxy group having 6 to 30 carbon atoms, preferably an aryloxy group having 6 to 20 carbon atoms. Examples of the aryloxy group include phenoxy and biphenyloxy. In addition, the aryloxy group may be optionally substituted.

[0222] Aralkyl - as used herein, encompasses aryl-substituted alkyl groups. The aralkyl group may be an aralkyl group having 7 to 30 carbon atoms, preferably an aralkyl group having 7 to 20 carbon atoms, and more preferably an aralkyl group having 7 to 13 carbon atoms. Examples of aralkyl groups include benzyl, 1-phenylethyl, 2-phenylethyl, 1-phenylisopropyl, 2-phenylisopropyl, phenyl tert-butyl, α-naphthylmethyl, 1-α-naphthyl-ethyl, 2-α-naphthylethyl, 1-α-naphthylisopropyl, 2-α-naphthylisopropyl, β-naphthylmethyl, 1-β-naphthyl-ethyl, 2-β-naphthyl-ethyl, 1-β-naphthylisopropyl, 2-β-naphthylisopropyl, p-methylbenzyl, m-methylbenzyl, substituted alkyl.Alkyl group can be substituted alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl, alkyl,

[0223] Alkylsilyl - As used herein, encompasses alkyl-substituted silicon groups. The alkylsilyl group may be an alkylsilyl group having 3 to 20 carbon atoms, preferably an alkylsilyl group having 3 to 10 carbon atoms. Examples of alkylsilyl groups include trimethylsilyl, triethylsilyl, methyldiethylsilyl, ethyldimethylsilyl, tripropylsilyl, tributylsilyl, triisopropylsilyl, methyldiisopropylsilyl, dimethylisopropylsilyl, tri-tert-butylsilyl, triisobutylsilyl, dimethyl-tert-butylsilyl, and methyldi-tert-butylsilyl. Additionally, the alkylsilyl group may be optionally substituted.

[0224] Arylsilyl - As used herein, encompasses silicon groups substituted with at least one aryl group. The arylsilyl group may be one having 6 to 30 carbon atoms, preferably one having 8 to 20 carbon atoms. Examples of arylsilyl groups include triphenylsilyl, phenyldibiphenylsilyl, diphenylbiphenylsilyl, phenyldiethylsilyl, diphenylethylsilyl, phenyldimethylsilyl, diphenylmethylsilyl, phenyldiisopropylsilyl, diphenylisopropylsilyl, diphenylbutylsilyl, diphenylisobutylsilyl, and diphenyltert-butylsilyl. Additionally, the arylsilyl group may be optionally substituted.

[0225] Alkylgermanyl - As used herein, alkyl-substituted germanium groups are encompassed. The alkylgermanyl group can be an alkylgermanyl group having 3 to 20 carbon atoms, preferably an alkylgermanyl group having 3 to 10 carbon atoms. Examples of alkylgermanyl groups include trimethylgermanyl, triethylgermanyl, methyldiethylgermanyl, ethyldimethylgermanyl, tripropylgermanyl, tributylgermanyl, triisopropylgermanyl, methyldiisopropylgermanyl, dimethylisopropylgermanyl, tri-tert-butylgermanyl, triisobutylgermanyl, dimethyl-tert-butylgermanyl, and methyldi-tert-butylgermanyl. Additionally, the alkylgermanyl group can be optionally substituted.

[0226] Arylgermanyl - As used herein, encompasses germanium groups substituted with at least one aryl or heteroaryl group. The arylgermanyl group may be one having 6 to 30 carbon atoms, preferably one having 8 to 20 carbon atoms. Examples of arylgermanyl groups include triphenylgermanyl, phenyldibiphenylgermanyl, diphenylbiphenylgermanyl, phenyldiethylgermanyl, diphenylethylgermanyl, phenyldimethylgermanyl, diphenylmethylgermanyl, phenyldiisopropylgermanyl, diphenylisopropylgermanyl, diphenylbutylgermanyl, diphenylisobutylgermanyl, and diphenyltert-butylgermanyl. Additionally, the arylgermanyl group may be optionally substituted.

[0227] The term "aza" in azadibenzofuran, azadibenzothiophene, etc., means that one or more CH groups in the corresponding aromatic moiety are replaced by a nitrogen atom. For example, azatriphenylene includes dibenzo[f,h]quinoxaline, dibenzo[f,h]quinoline, and other analogs having two or more nitrogen atoms in the ring system. Other nitrogen analogs of the above-mentioned aza derivatives will readily occur to one of ordinary skill in the art, and all such analogs are intended to be included within the terminology described herein.

[0228] In the present disclosure, unless otherwise defined, when any one of the terms in the group consisting of substituted alkyl, substituted cycloalkyl, substituted heteroalkyl, substituted heterocyclyl, substituted aralkyl, substituted alkoxy, substituted aryloxy, substituted alkenyl, substituted alkynyl, substituted aryl, substituted heteroaryl, substituted alkylsilyl, substituted arylsilyl, substituted alkylgermanyl, substituted arylgermanyl, substituted amino, substituted acyl, substituted carbonyl, substituted carboxylic acid, substituted ester , substituted hydroxyl, substituted mercapto, substituted sulfinyl, substituted sulfonyl, substituted phosphino, refers to alkyl, cycloalkyl, heteroalkyl, heterocyclic, aralkyl, alkoxy, aryloxy, alkenyl, alkynyl, aryl, heteroaryl, alkylsilyl, arylsilyl, alkylgermanyl, arylgermanyl, amino, acyl, carbonyl, carboxylic acid, ester, hydroxyl, mercapto, sulfinyl, sulfonyl and phosphino, any one of which may be selected from deuterium, halogen, unsubstituted alkyl, ... alkyl, unsubstituted cycloalkyl having 3 to 20 ring carbon atoms, unsubstituted heteroalkyl having 1 to 20 ring carbon atoms, unsubstituted heterocyclyl having 3 to 20 ring carbon atoms, unsubstituted aralkyl having 7 to 30 carbon atoms, unsubstituted alkoxy having 1 to 20 carbon atoms, unsubstituted aryloxy having 6 to 30 carbon atoms, unsubstituted alkenyl having 2 to 20 carbon atoms, unsubstituted alkynyl having 2 to 20 carbon atoms, unsubstituted alkyl having 6 to 30 carbon atoms The alkyl group may be substituted with an unsubstituted aryl group having 3 to 30 carbon atoms, an unsubstituted heteroaryl group having 3 to 30 carbon atoms, an unsubstituted alkylsilyl group having 3 to 20 carbon atoms, an unsubstituted arylsilyl group having 6 to 20 carbon atoms, an unsubstituted alkylgermanyl group having 3 to 20 carbon atoms, an unsubstituted arylgermanyl group having 6 to 20 carbon atoms, an unsubstituted amino group having 0 to 20 carbon atoms, an acyl group, a carbonyl group, a carboxylic acid group, an ester group, a cyano group, an isocyano group, a hydroxyl group, a mercapto group, a sulfinyl group, a sulfonyl group, a phosphino group, and combinations thereof.

[0229] It should be understood that when describing a molecular fragment as a substituent or otherwise attached to another moiety, its name can be written according to whether it is a fragment (e.g., phenyl, phenylene, naphthyl, dibenzofuranyl) or according to whether it is an entire molecule (e.g., benzene, naphthalene, dibenzofuran). As used herein, these different ways of designating a substituent or attaching a fragment are considered equivalent.

[0230] In the compounds described herein, hydrogen atoms may be partially or completely replaced by deuterium. Other atoms such as carbon and nitrogen may also be replaced by their other stable isotopes. The replacement of other stable isotopes in compounds may be preferred because it enhances device efficiency and stability.

[0231] In the compounds described herein, polysubstitution refers to a range including disubstitution up to the maximum number of available substitutions. When a substituent in a compound described herein represents polysubstitution (including disubstitution, trisubstitution, tetrasubstitution, etc.), it means that the substituent can be present at multiple available substitution positions on its connected structure, and the substituents present at multiple available substitution positions can have the same structure or different structures.

[0232] In the compounds mentioned in the present disclosure, unless clearly defined, such as adjacent substituents can be optionally connected to form a ring, otherwise adjacent substituents in the compound cannot be connected to form a ring. In the compounds mentioned in the present disclosure, adjacent substituents can be optionally connected to form a ring, including the situation where adjacent substituents can be connected to form a ring, and also including the situation where adjacent substituents are not connected to form a ring. When adjacent substituents can be optionally connected to form a ring, the formed ring can be a monocyclic or polycyclic ring (including spirocyclic, bridged ring, condensed ring, etc.), as well as an alicyclic, heteroalicyclic, aromatic or heteroaromatic ring. In this statement, adjacent substituents can refer to substituents bonded to the same atom, substituents bonded to carbon atoms directly bonded to each other, or substituents bonded to carbon atoms further away. Preferably, adjacent substituents refer to substituents bonded to the same carbon atom and substituents bonded to carbon atoms directly bonded to each other.

[0233] The statement that adjacent substituents can optionally be linked to form a ring is also intended to be taken to mean that two substituents bonded to the same carbon atom are linked to each other by a chemical bond to form a ring, as can be exemplified by the following formula:

[0234]

[0235] The statement that adjacent substituents can optionally be linked to form a ring is also intended to be taken to mean that two substituents bonded to carbon atoms directly bonded to each other are linked to each other via a chemical bond to form a ring, as can be exemplified by the following formula:

[0236]

[0237] The statement that adjacent substituents can optionally be linked to form a ring is also intended to be taken to mean that two substituents bonded to further distant carbon atoms are linked to each other by a chemical bond to form a ring, as can be exemplified by the following formula:

[0238]

[0239] Furthermore, the statement that adjacent substituents can optionally be linked to form a ring is also intended to mean that, in the case where one of the two adjacent substituents represents hydrogen, the second substituent is bonded to the position to which the hydrogen atom is bonded, thereby forming a ring. This is exemplified by the following formula:

[0240]

[0241] As used herein, "top" means farthest from the substrate, while "bottom" means closest to the substrate. When a first layer is described as being "disposed on" a second layer, the first layer is disposed farther from the substrate. Conversely, when a first layer is described as being "disposed below" a second layer, the first layer is disposed closer to the substrate. Unless it is specified that a first layer is "in contact with" a second layer, other layers may be present between the first and second layers. For example, the cathode may be described as being "disposed on" the anode even if various organic layers are present between the cathode and the anode.

[0242] As used herein, the term "OLED device" includes an anode layer, a cathode layer, and one or more organic layers disposed between the anode layer and the cathode layer. An "OLED device" can be bottom-emitting (bottom-emitting), i.e., emitting light from the anode side, or top-emitting (top-emitting), i.e., emitting light from the cathode side, or a transparent device, i.e., emitting light from both the anode and cathode.

[0243] As used herein, the term "OLED light-emitting panel" includes a substrate, an anode layer, a cathode layer, one or more organic layers arranged between the anode layer and the cathode layer, an encapsulation layer, and at least one anode contact and at least one cathode contact extending outside the encapsulation layer for external access.

[0244] As used herein, the term "encapsulation layer" may be a thin film encapsulation with a thickness of less than 100 microns, which includes directly setting one or more thin films on the device, or may be a cover glass adhered to the substrate. When the encapsulation layer is a thin film encapsulation, it may further include a multilayer structure, for example, at least one layer of inorganic semiconductor thin film, such as SiN, AlO, SiO, etc., and at least one layer of organic thin film. Inorganic thin films are generally formed by chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering, while organic thin films are generally formed by solution method, especially ink jet printing. In one embodiment of the present invention, the first film layer is preferably an organic thin film in the encapsulation layer, and the second film layer is preferably an inorganic thin film in the encapsulation layer.

[0245] As used herein, the term "capping layer," also known as a capping layer (CPL), is an organic film layer with an optically functional layer typically disposed above the cathode of a top-emitting device to increase the device's light extraction efficiency. The CPL layer typically comprises an organic small molecule material with a high refractive index and is typically formed by vapor deposition. In one embodiment of the present invention, the first film layer is preferably the capping layer.

[0246] As used herein, the term "light emitting region" refers to the portion of the planar area where the anode, organic layer, and cathode overlap, excluding light extraction effects.

[0247] As used herein, the term "light-emitting surface" refers to the side of an OLED device that emits light. For example, for a bottom-emitting OLED device, the "light-emitting surface" includes the side of the device that includes the anode and is away from the light-emitting layer. For a top-emitting device, the "light-emitting surface" includes the side of the device that includes the cathode and is away from the light-emitting layer. In the optoelectronic device of the present invention, the first film layer is disposed on the light-emitting surface of the OLED device, and the portion of the light energy emitted by at least one light-emitting layer in the optoelectronic device that is incident on the region of the first film layer that includes the second material.

[0248] As used herein, the term "single-layer device" refers to a device having a light-emitting layer (or multiple continuous light-emitting layers) and corresponding hole and electron transport layers between a pair of anodes and cathodes. Such a device having a single light-emitting layer (or multiple continuous light-emitting layers) and its corresponding transport layer is called a "single-layer device".

[0249] As used herein, the term "stacked device" refers to a device structure having multiple light-emitting layers between a pair of anodes and cathodes, and each light-emitting layer has its own independent hole transport layer and electron transport layer. Each light-emitting layer and its supporting hole transport layer and electron transport layer constitute a single light-emitting layer. These single light-emitting layers are connected by a charge generation layer. A device having such multiple single light-emitting layers is called a "stacked device."

[0250] As used herein, "refractive index", i.e., optical refractive index (n), refers to the ratio of the propagation speed of light in a vacuum to the propagation speed of light in the medium (material). In this article, the refractive index of a material is measured by placing the sample material under test in a high vacuum (e.g., 10 -6 Torr) at an appropriate rate (e.g., ) was evaporated onto a silicon wafer to form a 30nm thick film as the test area. The sample was then placed on the ellipsometer test sample stage for refractive index (n) testing in the wavelength range of 300-800nm.

[0251] As used herein, "quantum yield," also known as photoluminescence quantum yield (PLQY), refers to the efficiency of photon utilization in a photochemical reaction. It is defined as the ratio of the number of photons emitted by a substance after absorbing light to the number of photons absorbed.

[0252] As used herein, "near-infrared light" refers to light with a wavelength in the 700-2500nm range. In particular, in the context of phototherapy, "near-infrared light" can refer to a portion of this wavelength range, such as light in the 700-1400nm range. As used herein, "visible light" refers to light with a wavelength in the 400-700nm range. As used herein, "deep red light" refers to light with a wavelength in the 650-700nm range.

[0253] As used herein, "small organic molecule material" refers to any organic or organometallic material that is not a polymer. Small molecules can have large molecular weights as long as they possess a precise structure. Dendrimers, which have well-defined structures, can be considered small molecules. Preferably, small organic molecules are organic compounds with a molecular weight of 10,000 or less; more preferably, organic compounds with a molecular weight of 5,000 or less; and most preferably, organic compounds with a molecular weight of 2,000 or less.

[0254] As used herein, "polymer material" refers to a compound composed of multiple identical structural units repeatedly connected by covalent bonds, usually with high (10 4 -10 6 In one embodiment of the present invention, the first material is preferably an organic macromolecular polymer material, more preferably an organic macromolecular polymer material with water and oxygen barrier properties.

[0255] The ideal luminescence spectrum used in the field of phototherapy should include red light and near-infrared light. There are many ways to achieve multi-color luminescence using OLED devices. For example, a common method is to combine panels of different colors as described in patent application US11359770B2. This is a common method to achieve multi-color at the system level. However, this method requires the preparation of panels (or devices) of different colors, which must then be integrated. The process is complex, and different colors of light are emitted in different spatial regions, making it impossible to achieve the effect of multi-color treatment in multiple single regions. Another common method is to achieve multi-color luminescence at the device level. The most common method is to use a stacked structure, such as connecting a red light OLED unit and a near-infrared light OLED unit vertically in series through a charge generation layer (CGL). In this way, when current is applied, the red light unit and the near-infrared unit can emit simultaneously, achieving multi-color luminescence. This method of preparing light-emitting units of different colors in the same device can achieve the effect of multi-color light emission in a single area. However, due to the current limitations of the development of near-infrared luminescent materials, the luminous efficiency of near-infrared OLEDs is low (generally speaking, the external quantum efficiency (EQE) of most near-infrared luminescent materials with a peak wavelength above 700nm is generally below 10%). Therefore, it is difficult to commercialize. For example, the near-infrared phosphorescent luminescent material disclosed in ICDT2022 39.3 “Highly Efficient Near-Infrared Phosphorescent OLEDs” has a power consumption of 10mA / cm 2 It can achieve emission with a peak wavelength of about 800nm, but its external quantum efficiency (EQE) is only 9%.

[0256] Although high-efficiency near-infrared luminescent materials need further research and development, the research and development of visible light, such as red light, yellow-orange light, and green light luminescent materials, is already relatively mature in the field, and down-conversion photoluminescent materials (i.e., down-conversion materials) have the function of converting short-wavelength light into long-wavelength light, and usually have a higher PLQY. Therefore, using down-conversion materials to convert visible light into near-infrared light has also become a possible way to achieve near-infrared luminescence. For example, CN114195615A discloses a down-conversion film, which mainly converts blue light into other colors, such as green light with a wavelength between 500-550nm and red light between 600-650nm. In addition, some indium phosphide and zinc sulfide quantum dots (InP / ZnS QD) materials can also realize the conversion of visible light into near-infrared light emitted at 700nm (https: / / www.mesolight.cc / products / yrxinp.html). This down-conversion material or film can be used in combination with an OLED device. For example, patent application US11145692B2 combines a down-conversion material (down-conversion layer) in the form of a single film with a prepared red light OLED device. However, in this mode, the device can only emit near-infrared light, and cannot emit red and near-infrared light simultaneously.

[0257] In order to solve the above problems, the present invention provides a novel optoelectronic device comprising a specific first film layer to achieve multi-color luminescence, wherein the first film layer can exist as a capping layer or a thin film encapsulation layer in the device, and by adding a down-conversion material in the form of doping into the first film layer, the light emitted by the light-emitting layer, preferably red light, is absorbed by the down-conversion material and converted into deep red or near-infrared light, thereby achieving the effect of simultaneously emitting deep red / near-infrared light and red light. In particular, the down-conversion material is preferably an organic small molecule material, which can be doped into a conventional capping layer in the form of co-evaporation, or doped into an organic thin film encapsulation layer in the form of a solution method, and a layer of inorganic thin film can be further provided thereon to ensure that water and oxygen in the air are blocked. The optoelectronic device disclosed in the present invention, by doping a second material with a down-conversion function into the organic film in the capping layer or the thin film encapsulation layer, can not only achieve the effect of multi-color luminescence without increasing the number of device layers, but also has higher luminous efficiency, simplified process, and low cost.

[0258] Figure 2aThis is a schematic diagram of the structure of the novel optoelectronic device 100 of the present invention. The optoelectronic device 100 includes a substrate 110, an OLED device 120, and an encapsulation layer 130. Substrate 110 can be a glass substrate or a flexible substrate, such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), or PI (polyimide). It can also be a metal film, such as a stainless steel film, or a silicon wafer containing a complementary metal oxide semiconductor (CMOS) circuit. The substrate can also include a backplane circuit. OLED device 120 can further include an anode 121, a cathode 122, organic layers 123, 124, and 125, and a capping layer 126. The OLED device 120 can be a top-emitting device. The anode 121 is a material with high reflectivity, such as, but not limited to, Ag, Pt, Ti, and combinations thereof with ITO, MoOx, TiN, etc. Typically, its reflectivity is greater than 50%; preferably, greater than 80%; and more preferably, greater than 90%. The cathode 122 is a transparent or semi-transparent material, such as, but not limited to, Yb, Mg, Ag, and combinations thereof, with a transmittance generally greater than 30%; preferably, greater than 50%. The organic layer 124 comprises at least one light-emitting layer that emits light with a peak wavelength between 500-650 nm, preferably between 550-650 nm, and more preferably between 600-630 nm. The light-emitting layer preferably comprises at least one phosphorescent material. The organic layer 123 may further comprise a hole injection layer, a hole transport layer, and an electron blocking layer; and the organic layer 125 may further comprise a hole blocking layer, an electron transport layer, and an electron injection layer, which are not shown in detail in the figure. Note that the OLED device 120 may also use a stacked device structure, for example, the organic layers 123 to 125 are repeatedly stacked vertically as a unit, and the two units are connected using a charge generation layer. The light-emitting layer in any unit emits visible light, preferably light with a peak wavelength between 500-650nm. The material selection and preparation method of the corresponding layers in the OLED device are well known to people in the field. It is not the focus of discussion in this application and will not be discussed here.

[0259] In particular, in the optoelectronic device 100, the capping layer 126 comprises at least two materials. The first material is an organic small molecule material, which typically has a relatively high optical refractive index, with an optical refractive index (n) of greater than or equal to 1.7 at 500-650 nm, preferably greater than or equal to 1.8, and more preferably greater than or equal to 1.9. Note that the first material can typically be used independently as a capping layer. In this case, the capping layer can further improve the luminous efficiency of the top-emitting device.

[0260] The capping layer 126 also includes a second material, which has photoluminescent properties and can absorb visible light and emit near-infrared light. That is, in the optoelectronic device 100, the capping layer 126 exists as a first film layer. At this time, the capping layer contains both a first material with a high refractive index and a second material with a down-conversion effect, so that it can not only be used to increase the light extraction efficiency of the device but also achieve a multi-color luminescence effect. In particular, the second material can be excited by the light emitted by the luminescent layer, and its maximum excitation wavelength is between 500-650nm, preferably between 550-650nm, and more preferably between 600-630nm. After absorbing the above-mentioned excitation wavelength, the second material can emit deep red and near-infrared light with a peak wavelength of more than 650nm, preferably, more than 700nm, more preferably, more than 750nm, and even more preferably, more than 800nm.

[0261] In particular, the second material with photoluminescent properties can be selected from, but not limited to, phosphor materials, quantum dot materials (such as indium phosphide (InP), zinc sulfide (ZnS) quantum dot materials), organic light-emitting materials and perovskite materials. Preferably, the second material can be an organic small molecule material or a quantum dot material, because it usually has a very high absolute quantum efficiency. In particular, organic small molecule materials (preferably phosphorescent materials) can regulate the emission wavelength and peak shape of the material by changing the group position and composition, so as to achieve luminescence in the deep red and near-infrared bands. The fluorescence quantum conversion efficiency (or, photoluminescence quantum yield PLQY) of the second material is preferably greater than or equal to 30%, preferably, greater than or equal to 50%, more preferably, greater than or equal to 80%, and even more preferably, greater than or equal to 90%. The selection of the second material with a higher quantum yield includes, but is not limited to, the specific compounds listed in the aforementioned embodiments. Among them, as an example, we measured the photoluminescence (PL) spectrum of the organic small molecule material compound 1 (such as Figure 6 ) and quantum yield (PLQY) data, the PLQY of which is 45%.

[0262] The specific structure of compound 1 is shown below:

[0263]

[0264] The low-temperature photoluminescence spectrum (PL) test method of the selected organic small molecule materials in this article is as follows: The low-temperature photoluminescence spectrum of compound 1 was measured using a Lingguang F98 fluorescence spectrophotometer produced by Shanghai Lingguang Technology Co., Ltd. The sample to be tested was dissolved in anhydrous 2-methyltetrahydrofuran and prepared to a concentration of 10 -5mol / L solution, then put the sample into a low-temperature sample tube, and then put it into a Dewar flask, and fill the Dewar flask with liquid nitrogen, the amount of liquid nitrogen should not exceed 1 / 3 of its volume. Then select the excitation wavelength according to the properties of the corresponding compound to scan the sample to obtain its low-temperature photoluminescence spectrum, and the peak wavelength (λ max ) corresponding data.

[0265] Specifically, the emission spectrum of compound 1 at an excitation wavelength of 500 nm is as follows: Figure 6 As shown, the peak wavelength of its emission spectrum is λ max It can reach 668nm, and the peak is wide, containing more near-infrared (above 700nm) light; this shows that compound 1 can emit deep red or near-infrared light with a peak wavelength above 650nm under light excitation above 500nm. Light in these bands can pass through the epidermis of human skin and reach the dermis, thereby achieving a phototherapy effect.

[0266] PLQY test method: Use the C11347-11 absolute quantum yield tester produced by Hamamatsu, Japan, to measure the absolute quantum yield (PLQY) data of the relevant compounds. First, prepare the sample: - 6 Torr's case The sample was evaporated on a quartz substrate at a rate to prepare a thin film to be tested. In order to prevent the compound quenching phenomenon caused by excessive concentration, compound 1 was doped into the main material compound H-1 at a doping concentration of 2% wt to form a thin film sample to be tested. The total thickness of the sample was 200 nm. Secondly, the PLQY test was carried out: first, the multi-wavelength excitation (Scan) mode was used to scan within the instrument-allowed band (250nm-850nm), and then the optimal excitation wavelength was selected and the absolute quantum yield (PLQY) data was measured using the single wavelength excitation (Single) mode. All operations during the test were completed in the glove box. The basis for selecting the optimal excitation wavelength is: the excitation wavelength corresponding to the highest PLQY when the sample can be excited. The excitation wavelength selected for the PLQY test of the compound of the present application is 300 nm. The absolute quantum yield (PLQY) of compound 1 obtained by the test was 45%. It should be noted that the compound H-1 used in this test only serves as a dilution to prevent compound quenching due to excessive concentration during measurement. In actual use, it is not necessary to use compound H-1. Doping organic small molecule materials into the first material of the present invention can also achieve the same effect.

[0267] The molecular structure of compound H-1 is as follows:

[0268]

[0269] Currently, phosphorescent red-light emitting materials with peak wavelengths between 620 and 630 nm can achieve external quantum efficiencies (EQEs) exceeding 50% in top-emitting devices. For example, the applicant's prior application CN116082406A discloses a variety of phosphorescent red-light emitting materials with EQEs exceeding 50% for use in top-emitting devices. A simple calculation reveals that when the PLQY of the second material is 45%, the EQE of the down-converted output light can also be around 22.5%. As previously mentioned, devices with phosphorescent materials with peak wavelengths above 700 nm generally have EQEs below 10%. The EQE of the optoelectronic device of the present invention far exceeds the efficiency of most current devices that directly utilize near-infrared emitting materials. Even with a doping ratio of only 50% for the second material of the present invention, the down-converted EQE = 22.5% * 0.5 = 11.25%, still exceeding the efficiency of most near-infrared emitting materials currently available. Therefore, the present invention can generate near-infrared light with higher efficiency through this method. It should be noted that the above compounds are only examples. Other organic small molecule materials that meet the requirements can also be used as the second material in the optoelectronic device of the present invention. Those skilled in the art can also adjust the doping concentration of the second material or select a second material with a different PLQY according to actual application needs to obtain the desired down-converted light wave and achieve the desired multi-color luminescence effect.

[0270] The second material in the capping layer 126 is mixed with the first material in a doping manner, with a molar doping ratio of 1-99%, preferably 10-99%, more preferably 10-90%, and even more preferably 20-70%. The first and second materials in the capping layer 126 are co-evaporated into a film using vacuum thermal evaporation. The thickness is generally between 40-150 nm, preferably between 60-100 nm. If the second material has a high PLQY and a high doping concentration, the content of deep red or near-infrared light after down-conversion in the output light of the device 100 will be high. Conversely, if the second material has a low PLQY or a low doping concentration, the content of down-converted light waves in the output light will be low, and the emission light of the OLED device 120 will be dominant. Therefore, the desired output light effect can be adjusted by selecting materials with different PLQYs and doping ratios.

[0271] The cover layer 126 may also be a composite structure, such as Figure 2bIn the illustrated photovoltaic device 101, the capping layer 126 may further include film layers 1261 and 1262, wherein film layer 1261 may comprise only the first material, i.e., functioning as a conventional capping layer, and film layer 1262 may comprise both the first and second materials to achieve a down-conversion effect. Note that this is merely an example, and the film layer 1261 comprising only the first material may be positioned opposite the film layer 1262 comprising both the first and second materials, or multiple film layers comprising only the first material and film layers comprising both the first and second materials may overlap to form a composite film layer, which is not illustrated here.

[0272] The device 100 also includes an encapsulation layer 130. Preferably, the encapsulation layer 130 is a thin film encapsulation layer. The encapsulation layer 130 may further include a multilayer thin film, such as inorganic thin films 131 and 133, an organic thin film 132, and overlapping combinations thereof. The inorganic thin films 131 and 133 may be the same material or different materials, including but not limited to SiO, SiN, AlO, or a combination thereof. The inorganic thin films 131 and 133 are typically prepared by chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering. The organic thin film 132 is typically an organic macromolecular polymer that can be formed into a film by a solution method. Preferably, the film is prepared by ink jet printing, followed by ultraviolet (UV) light curing or thermal curing.

[0273] In such a device 100, the capping layer 126 doped with the down-conversion material serves as the first film layer. The organic layer 124 of the device 100 may include an orange luminescent material, which excites the second material doped in the capping layer 126, causing it to emit red and near-infrared light with peak wavelengths above 700 nm. In this case, the device 100 can simultaneously emit orange, red, and near-infrared light. The inorganic film layer 131 or 133 in the encapsulation layer 130 can serve as the second film layer, protecting the down-conversion material from corrosion by water and oxygen.

[0274] Another optoelectronic device 200 of the present invention is as follows Figure 3As shown, it includes a substrate 210, an OLED device 220, and an encapsulation layer 230. Substrate 210 can also be a glass substrate, a flexible substrate, or a silicon wafer. OLED device 220 can further include an anode 221, a cathode 222, organic layers 223, 224, and 225, and a capping layer 226. Except for capping layer 226, the other layers can be made of the same materials as those used in optoelectronic device 100. For example, OLED device 220 can be a top-emitting device. Anode 221 is selected from a material or material combination with high reflectivity, including but not limited to Ag, Ti, Cr, Pt, Ni, TiN, Ag, Pt, Ti, and combinations of the above materials with ITO, MoOx, TiN, etc., typically with a reflectivity greater than 50%, preferably greater than 80%, and more preferably greater than 90%. Cathode 122 is a transparent or semi-transparent material, including but not limited to Yb, Mg, Ag, or a combination thereof, with a transmittance generally greater than 30%, preferably greater than 50%. The organic layer 124 includes at least one light-emitting layer, which preferably includes a phosphorescent material with an emission peak wavelength between 500 nm and 650 nm.

[0275] The difference is that in the optoelectronic device 200, the capping layer 226 no longer contains the second material (down-conversion material), which can be prepared from an organic small molecule material with a high refractive index. The encapsulation layer 230 is still a thin film encapsulation layer and can further include multiple layers of thin films, such as inorganic thin films 231, 233, organic thin films 232, and overlapping combinations thereof. The material selection and preparation method of the inorganic thin films 231, 233 can be consistent with that in the device 100. The difference is that the organic thin film 232 exists as the first film layer in the optoelectronic device 200, which includes a first material and a second material, wherein the first material is selected from an organic macromolecular polymer, preferably an organic macromolecular polymer with water and oxygen barrier properties; the second material is selected from a down-conversion photoluminescent material, which can be excited by the light emitted by the OLED device 220 and emit light with a longer wavelength. At this time, since the organic thin film 232 contains both the first material with water and oxygen barrier properties and the second material with down-conversion function, it not only has the function of a conventional encapsulation layer but also can achieve the effect of multi-color luminescence.

[0276] Preferably, the maximum excitation wavelength of the second material is between 500-650 nm, more preferably between 550-630 nm, and most preferably between 600-630 nm. The second material can emit deep red and near-infrared light with a peak wavelength above 650 nm, preferably above 700 nm, more preferably above 750 nm, and even more preferably above 800 nm. In the organic film 232, the second material can be doped in the first material at a molar ratio of 1-99%, preferably 10-99%, more preferably 10-90%, and even more preferably 20-70%. When the second material in the organic film has a high quantum yield (PLQY) and a high doping concentration, the content of down-converted light in the output light of the optoelectronic device 200 is high. Conversely, if the second material has a low PLQY or a low doping concentration, the content of down-converted light in the output light is low, and the emission light of the OLED device 220 is predominant. Therefore, the desired output light effect can be adjusted by selecting materials with different PLQY and doping ratios. The organic film 232 can be formed by a solution method, preferably by ink jet printing, and then cured by ultraviolet light (UV light) or thermal curing. Note that although only one layer of organic film 232 is shown in the figure, multiple layers of organic and inorganic films 231, 232, and 233 can be stacked repeatedly. The more times the organic film 232 is stacked, the more desired down-conversion light can be generated. In particular, an inorganic film 233 should be provided on the side of the organic film 232 away from the cathode to ensure that water and oxygen in the air are blocked, further ensuring the stability of the organic film 232. The inorganic film 233 exists as a second film layer in the optoelectronic device 200.

[0277] The selection of the second material in the organic film 232 of the device 200 can be consistent with that in the device 100, and can also be selected from phosphor materials, quantum dot materials (such as indium phosphide (InP), zinc sulfide (ZnS) quantum dot materials), organic light-emitting materials and perovskite materials, etc. Preferably, the second material can be an organic small molecule material or a quantum dot material, and more preferably an organic small molecule material with a PLQY greater than 30%.

[0278] Similarly, in such a device 200, the organic thin film 232 in the encapsulation layer doped with the second material (down-conversion material) serves as the first film layer, and the inorganic thin film 233 serves as the second film layer. The organic layer 224 of the optoelectronic device 200 may also include an orange-light emitting material, which excites the second material doped in the organic thin film 232, causing it to emit red light and near-infrared light with peak wavelengths above 700 nm. In this case, the device 200 can simultaneously emit orange, red, and near-infrared light.

[0279] Figure 4a A schematic structural diagram of another optoelectronic device 400 of the present invention is shown, which includes a substrate 410, an OLED device 420, an encapsulation layer 430, and a substrate-side encapsulation layer (water and oxygen barrier layer) 450. The substrate 410 can also be a glass substrate or a flexible substrate, and the substrate 410 is transparent. The OLED device 420 further includes an anode 421, a cathode 422, and organic layers 423, 424, and 425. In this case, the OLED device 420 is a bottom-emitting device. The anode 421 is selected from transparent or translucent materials, including but not limited to ITO, IZO, MoOx, or a combination thereof, while the cathode 422 is a highly reflective material, including but not limited to thick metal films such as Al and Ag. The arrangement of the organic layers 423, 424, and 425 can be consistent with the corresponding parts of the above-mentioned optoelectronic device 100 and will not be repeated here. Since the OLED device 420 is a bottom-emitting device, a capping layer is not required. The encapsulation layer 430 arranged on the OLED device 420 can be a thin film encapsulation or a hard glass encapsulation, but is preferably a thin film encapsulation. The water and oxygen barrier layer 450 disposed on the light-emitting side of the OLED device comprises an organic film 452 and two adjacent inorganic films 451 and 453 (wherein 453 is an optional layer). The organic film 452 exists as a first film layer and comprises a first material and a second material. Similarly, the first material can be selected from organic macromolecular polymers, and the second material is selected from down-conversion photoluminescent materials, which can absorb short-wavelength light and emit long-wavelength light, preferably absorb visible light and emit near-infrared light. In the organic film 452, the second material can be doped in the first material at a molar ratio of 1-99%, preferably 1-70%, and more preferably 1-50%. The organic film 452 can be formed by a solution method, preferably by inkjet printing, and then cured by ultraviolet light (UV light) or thermal curing. Unlike commonly used substrate-side barrier layers, due to the doping of small molecule down-conversion materials, at least one inorganic film 451, serving as a second film layer, is required between the organic film 452 and the substrate 410 to protect it from damage by water and oxygen. This novel optoelectronic device 400, like devices 100 and 200, can also achieve multicolor emission. Figure 4a The structure shown is suitable for materials that need to be flattened on the substrate 410, such as PET, PEN, etc. In this case, the organic water and oxygen barrier layer 452 is generally thicker and can flatten the substrate to prevent short circuits in the device. If the substrate itself is relatively flat but is also made of plastic such as PI (i.e., it has poor water and oxygen barrier properties), you can also use Figure 4bThe structure of the optoelectronic device 401 shown has a water and oxygen barrier layer 450 disposed on the outside of the substrate (i.e., the side away from the OLED device 420), and may also include an organic film 452 and two layers of inorganic films 451 and 453 disposed adjacent thereto (wherein 453 is an optional layer), wherein the organic film 452 exists as a first film layer, which contains a first material and a second material, and the inorganic film layer 451 serves as a second film layer to protect the down-conversion material in the organic film layer 452 from being corroded by water and oxygen.

[0280] The organic film doped with the second material (down-conversion material) may not be coated on the entire surface of the optoelectronic device, but only covers a portion thereof. The advantage of doing so is that selective treatment can be performed on the lesion.

[0281] Figure 5 An optoelectronic device 500 is shown that includes a second material (down-conversion material) only in a portion of the first film layer, and includes a substrate 510, an OLED device 520, and an encapsulation layer 530. The top-emitting OLED device 520 includes an anode 521, a cathode 522, organic layers 523, 524, 525, and a capping layer 526. The arrangement and material selection of each layer in the OLED device 520 can be consistent with the corresponding layers in the OLED device 120 described above and will not be repeated here. The difference is that the capping layer 526 is divided into two regions, region 5261 includes both the first material and the second material (i.e., the capping layer 526 exists as the first film layer at this time), wherein the first material can be selected from an organic small molecule material with a high refractive index, and the second material is a down-conversion material, as described above. Region 5262 only includes the first material. In this way, the output light 501 of the optoelectronic device includes the output light of the organic light-emitting layer 524 and the deep red and near-infrared light that has undergone down-conversion, while the output light 502 only includes the output light of the organic light-emitting layer 524. Of course, region 5262 can also include two materials, a first material and a third material, where the third material is also a down-conversion material, but at least one of its emission wavelength or excitation wavelength is different from that of the second material. In particular, when the OLED device 520 is a stacked device, the OLED device 520 can have multiple light-emitting layers and can have different emission wavelengths, so different down-conversion materials can be selected to correspond to them. This achieves multi-color light emission. The partitioned evaporation of the capping layer 526 can be achieved through a metal mask, which is well known to those in the industry and will not be repeated here. By the same token, if the second material is doped in the thin film encapsulation layer, partition control can also be performed during printing so that only a part of the area contains the down-conversion material.

[0282] In summary, the novel optoelectronic device disclosed in the present invention includes a first film layer that can be used as an organic thin film in a capping layer or a thin film encapsulation layer, and by adding a down-conversion material in the form of doping in at least a portion of the organic thin film in the capping layer or the encapsulation layer, the technical effect of multi-color luminescence can be achieved without adding an additional lower device layer, with a simplified process, low cost, and higher luminous efficiency. Those skilled in the art can obtain the desired multi-color luminescence by selecting a second material with different PLQY or adjusting the doping concentration of the second material as needed, such as simultaneously emitting high-efficiency visible light (especially orange, yellow, and red light) and near-infrared light. Therefore, it has great application prospects in the field of phototherapy.

[0283] It should be understood that the various embodiments described herein are merely examples and are not intended to limit the scope of the present invention. Therefore, as will be apparent to those skilled in the art, the claimed invention may include variations of the specific embodiments and preferred embodiments described herein. Many of the materials and structures described herein can be replaced with other materials and structures without departing from the spirit of the present invention. It should be understood that the various theories regarding why the present invention works are not intended to be restrictive.

Claims

1. A photoelectric device comprising: substrate, An anode, a cathode and at least one light-emitting layer are disposed on a substrate; The first film layer; The second film layer; in, The light emitted by the at least one light-emitting layer comprises a first peak wavelength; The first film layer has at least one region comprising a first material and a second material, wherein the second material is doped in the first material at a molar ratio of 1-99%; The excitation wavelength of the second material includes the first peak wavelength emitted by the at least one light-emitting layer, and the peak wavelength of the output light of the second material at the excitation wavelength is a second peak wavelength, and the second peak wavelength is ≥ the first peak wavelength + 50nm; The first film layer is arranged on the cathode or below the anode; The second film layer comprises an inorganic material; the second film layer is arranged on a side of the first film layer away from the cathode or the anode.

2. A photoelectric device comprising: A substrate, an anode, a cathode, at least one light-emitting layer and a first film layer arranged on the substrate; in, The light emitted by the at least one light-emitting layer comprises a first peak wavelength; The first film layer has at least one region containing a first material and a second material, wherein the second material is doped in the first material at a molar ratio of 1-99%; the optical refractive index of the first material in the wavelength range of 500-650nm is greater than or equal to 1.7; The excitation wavelength of the second material includes the first peak wavelength emitted by the at least one light-emitting layer, and the peak wavelength of the emitted light of the second material at the excitation wavelength is the second peak wavelength, and the second peak wavelength is ≥ the first peak wavelength + 50nm, The first film layer is arranged on the cathode; the light transmittance of the cathode is greater than 30%, and the reflectivity of the anode is greater than 50%.

3. The optoelectronic device according to claim 1 or 2, wherein: The second material comprises one or more of the following: quantum dot material, phosphor material, organic light-emitting material, perovskite material; Preferably, the second material is an organic small molecule material or a quantum dot material; More preferably, the second material is a phosphorescent material, an indium phosphide quantum dot material, or a zinc sulfide quantum dot material.

4. The optoelectronic device according to claim 1 or 2, wherein: The quantum yield of the second material is ≥30%; preferably, the quantum yield of the second material is ≥50%; more preferably, the quantum yield of the second material is ≥80%; most preferably, the quantum yield of the second material is ≥90%.

5. The optoelectronic device according to claim 1, wherein: The first material is a polymer material; preferably, the first material is a polymer material having water and oxygen barrier properties.

6. The optoelectronic device according to claim 1 or 5, wherein: The first material and the second material are mixed in the form of a solution.

7. The optoelectronic device according to claim 2, wherein: The first material is selected from organic small molecule materials.

8. The optoelectronic device according to claim 2 or 7, wherein: In the wavelength range of 500nm-650nm, the optical refractive index of the first material is greater than or equal to 1.8, more preferably, greater than or equal to 1.

9.

9. The optoelectronic device according to claim 2 or 7, wherein: The first material and the second material are mixed in a thermally evaporated form.

10. The optoelectronic device according to claim 1 or 2, wherein: The second material is doped in the first material at a molar ratio of 10-99%; Preferably, the second material is doped into the first material at a molar ratio of 10-90%; more preferably, the second material is doped into the first material at a molar ratio of 20-70%.

11. The optoelectronic device according to claim 1 or 2, wherein: The maximum excitation wavelength of the second material and the first peak wavelength are between 500-650nm; preferably, the maximum excitation wavelength of the second material and the first peak wavelength are between 550-650nm; more preferably, the maximum excitation wavelength of the second material and the first peak wavelength are between 600-630nm.

12. The optoelectronic device according to claim 1 or 2, wherein: The second peak wavelength is greater than 650 nm; preferably, the second peak wavelength is greater than 700 nm; more preferably, the second peak wavelength is greater than 750 nm.

13. The optoelectronic device according to claim 1 or 2, wherein: The second peak wavelength is ≥ the first peak wavelength+70 nm; preferably, the second peak wavelength is ≥ the first peak wavelength+100 nm.

14. The optoelectronic device according to claim 1 or 2, wherein: There is at least one region in the first film layer that does not contain the second material.

15. The optoelectronic device according to claim 1 or 2, further comprising at least two light-emitting layers; preferably, the light-emitting layers comprise at least one phosphorescent light-emitting material.

16. The optoelectronic device according to any one of claims 1 to 15, wherein: The first film layer has at least one region containing a third material, the excitation wavelength of the third material includes the first peak wavelength, and the peak wavelength of the output light thereof is a third peak wavelength, and the third peak wavelength is ≥ the first peak wavelength; Preferably, the third peak wavelength is different from the second peak wavelength and / or the third material excitation wavelength is different from the second material excitation wavelength.

17. The optoelectronic device according to claim 2, wherein: The first film layer is a capping layer.

18. The optoelectronic device according to claim 1, wherein: The second film layer is in direct contact with the first film layer; preferably, the first film layer is also in direct contact with at least one of the cathode, the anode or the substrate; more preferably, the first film layer is an organic thin film encapsulation layer.

19. The optoelectronic device according to claim 1 or 2, wherein: The substrate is selected from one or more of the following: glass, plastic, and silicon wafer.

20. A light emitting panel comprising the optoelectronic device according to any one of claims 1 to 19.

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