Preparation method and application of high-speed perovskite photoelectric detector

Abstract

The invention discloses a preparation method and application of a high-speed perovskite photoelectric detector, and relates to the technical field of detector devices, in particular to the preparation method and application of the high-speed perovskite photoelectric detector. The problems that an existing perovskite-based photoelectric detector is large in dark current, mismatched in energy level, high in series resistance and not beneficial to interface carrier extraction are solved. The method comprises the following steps: providing a substrate and pre-treating the substrate to obtain a pre-treated substrate; spin-coating a NiOx solution on the pretreated substrate, and annealing to obtain a pretreated film layer; the surface of the pretreated film layer is rotationally coated with a 2Br-POOH solution, annealing is conducted, and a first treated piece is obtained; dropping the perovskite precursor solution onto the first processing piece, and performing spin coating and annealing to obtain a perovskite thin film; and thermally evaporating the electrode on the substrate to obtain the photoelectric detector. According to the method, longitudinal growth of perovskite crystals is promoted, collection and transmission of carriers are facilitated, and the device is high in stability and response.

Description

Technical Field

[0001] The present invention relates to the technical field of detector devices, and in particular to a preparation method of a high-speed perovskite photoelectric detector and an application thereof. Background Art

[0002] As we all know, optical communication and imaging are crucial in the fields of positioning navigation, intelligent interactive systems, and image sensing. Traditional photodetectors usually rely on materials such as silicon (Si) and indium gallium arsenide (InGaAs). Although the performance can meet the requirements, it requires expensive and complex manufacturing processes. Therefore, there is an urgent need for more economical and accessible materials that can also provide similar performance in the fields of optical communication and imaging. Metal halide perovskites are promising candidates for the next generation of photodetectors due to their excellent optoelectronic properties, low-temperature solution processing and manufacturing, readily available raw materials, and simple integration with complementary metal oxide semiconductor technology.

[0003] However, high-performance optical communication and imaging detectors must have high responsiveness, high detection rate, low noise and ultrafast response speed. In recent years, people have improved the performance of perovskite-based detectors in terms of composition engineering, passivation defects, interface engineering and crystallization regulation.

[0004] However, the key issue in designing high-performance perovskite photodetectors is the optimization of materials, structures, etc., which is the result of multi-faceted collaboration rather than unilateral optimization, which is a complex and time-consuming process.

[0005] Therefore, existing perovskite-based photodetectors generally have the following defects: dark current, high interface potential barrier, high series resistance, and disadvantageous defects for interface carrier extraction. Summary of the invention

[0006] The purpose of the present invention is to solve the problem that the existing perovskite-based photodetector has high dark current, high interface barrier and high series resistance, which is not conducive to the extraction of interface carriers. The present invention provides a low-cost, high-performance perovskite photodetector preparation method and application thereof, adopting a perovskite double interface passivation strategy assisted by 4-(3,6-dibromo-9-aminocarbazole-9-yl)butyl)phosphonic acid (2Br-POOH-EHOA) and 2-hydrazine-2-oxyethyl acetate (EHOA), synergistically acting on the upper and lower surfaces of the perovskite, and synergistically optimizing the transmission layer and the perovskite layer, so that the energy level of the entire device is more matched, which is conducive to the extraction and collection of carriers, and the entire interface is stable and non-destructive defect passivation. The prepared photodetector has excellent performance, high speed, high response, and strong superiority.

[0007] In order to achieve the above-mentioned purpose, the present invention specifically adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a method for preparing a high-speed perovskite photodetector, comprising the following steps: S1, providing a substrate and pre-treating it to obtain a pre-treated substrate; S2, spin-coating a NiOx solution on the pre-treated substrate and annealing to obtain a pre-treated film layer; S3, spin-coating a 2Br-POOH solution on the surface of the pre-treated film layer and annealing to obtain a first treated part; S4, dripping a perovskite precursor solution onto the first treated part and spin-coating and annealing to obtain a perovskite film; S5, thermally evaporating an electrode on the substrate to obtain a photodetector.

[0009] Furthermore, in S1, the substrate is a transparent conductive substrate that can withstand high temperatures above 150°C.

[0010] Furthermore, the S1 specifically includes providing a substrate and cleaning it with a detergent, deionized water ultrasound and isopropanol solution respectively, and placing the substrate in a UV ozone instrument for 25 to 35 minutes after drying.

[0011] Furthermore, in S2, the NiOx solution is a 8-12 mg / ml NiOx deionized water solution.

[0012] Furthermore, S2 is specifically, after spin coating the NiOx solution on the pretreated substrate at a speed of 1800-2100 rpm for 28-32 seconds, placing it on a hot plate at 115-125° C., and annealing it in an air environment for 12-18 minutes to obtain a pretreated film layer.

[0013] Furthermore, in S3, the 2Br-POOH solution is a 2Br-POOH ethanol solution with a concentration of 0.3 to 0.6 mg / ml.

[0014] Furthermore, S3 specifically comprises: spin coating the surface of the pre-treated film layer with 2Br-POOH solution at a speed of 2800-3200 rpm for 28-32 seconds, and then annealing at 90-110° C. for 8-12 minutes in a nitrogen atmosphere to obtain a first treated part.

[0015] Furthermore, in S4, the method for preparing the perovskite precursor solution is to dissolve the raw materials CsI, FAI and PbI2 in a DMF / DMSO mixed solvent at a molar stoichiometric ratio of 0.1:0.9:1 to prepare a Cs0.1FA0.9PbI3 precursor solution of about 1M.

[0016] Furthermore, S4 is specifically as follows: 40-50 μl of perovskite precursor solution is dripped onto the first treatment piece, and the solution is spin-coated at a speed of 1000-1200 rpm for 10-12 s, and then spin-coated at an acceleration speed of 1000-1200 rpm / s for 5000-5500 rpm for 30 s. During this process, 280-300 μl of chlorobenzene anti-solvent is gently dripped onto the first treatment piece from the first 30-32 s, and annealed at 145-150° C. for 10-15 min in an atmosphere of 2-hydrazine-2-oxyethyl acetate to obtain a perovskite film.

[0017] On the other hand, the present invention also provides the application of the above-mentioned method for preparing a high-speed perovskite photodetector in a photodetector device.

[0018] Compared with the prior art, the advantages of the present invention are:

[0019] 1. The present invention provides a method for preparing a high-speed perovskite photodetector, in which 2Br-POOH is introduced on the nickel oxide interface, which fills the defects in NiOx, adjusts its work function, passivates the uncoordinated Pb2+ at the bottom of the perovskite, and promotes the longitudinal growth of the perovskite crystal.

[0020] On the other hand, EHOA vapor treatment tunes the work function of the perovskite crystal and surface, reducing the stability of the perovskite due to electron accumulation.

[0021] The above-mentioned double interface passivation effectively promotes the carrier transport rate at the interface. At the same time, the interface and surface modification promote charge extraction, inhibit interface recombination, and effectively improve device performance.

[0022] Through proper device interface design, effective energy level alignment can be established in the perovskite layer and the transport layer, resulting in favorable band bending and better carrier generation and transport. As a result, perovskite devices using the integrated 2Br-POOH-EHOA co-processing approach can achieve short response times of less than 30 ns and greater than 10 5 The on / off ratio is less than 6.21×10 - 26 A 2 Hz -1 In addition, optical communication and imaging demonstrations were performed, and the results further showed that the perovskite photodetector prepared by the present invention is a promising candidate for low-cost, high-performance photodetectors.

[0023] The preparation method of the present invention adopts a perovskite double interface passivation strategy assisted by 4-(3,6-dibromo-9-aminocarbazole-9-yl)butyl)phosphonic acid (2Br-POOH-EHOA) and 2-hydrazine-2-oxyethyl acetate (EHOA), synergistically acts on the upper and lower surfaces of the perovskite, and synergistically optimizes the transmission layer and the perovskite layer, so that the energy level of the entire device is more matched, which is conducive to the extraction and collection of carriers, and the entire interface is stable and non-destructive defect passivation. Therefore, the prepared photodetector has excellent performance, high speed, high response, and strong superiority.

[0024] 2. The application of the method for preparing a high-speed perovskite photodetector provided by the present invention has universal applicability and good application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 Schematic diagram of the structure and mechanism of 2Br-POOH modified NiOx substrate of the present invention.

[0026] Figure 2 The molecular structure and mechanism diagram of ethyl 2-hydrazino-2-oxyacetate vapor (EHOA) of the present invention are shown.

[0027] Figure 3 IV curves of device 1 prepared in Example 1 of the present invention and device 2 prepared in the comparative example.

[0028] Figure 4 The transient light response diagrams of the device 1 prepared in Example 1 of the present invention and the device 2 prepared in the comparative example are shown.

[0029] Figure 5 Graph showing equivalent noise measurement results of device 1 prepared in Example 1 of the present invention and device 2 prepared in the comparative example.

[0030] Figure 6 This is an eye diagram of the on-off keying (OOK) data stream of the photodetector 1 prepared in Example 1 of the present invention.

[0031] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0032] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. DETAILED DESCRIPTION

[0033] Existing photo-controlled fluid solutions have the disadvantage that they can only control the unidirectional transport of liquid and are difficult to photo-control the rotational motion of the fluid.

[0034] In a first aspect, the present invention provides a method for preparing a high-speed perovskite photodetector, comprising the following steps: S1, providing a substrate and pre-treating it to obtain a pre-treated substrate; S2, spin-coating a NiOx solution on the pre-treated substrate and annealing to obtain a pre-treated film layer; S3, spin-coating a 2Br-POOH solution on the surface of the pre-treated film layer and annealing to obtain a first treated part; S4, dripping a perovskite precursor solution onto the first treated part and spin-coating and annealing to obtain a perovskite film; S5, thermally evaporating an electrode on the substrate to obtain a photodetector.

[0035] Understandably, see Figure 1 and Figure 2 The preparation method provided by the present invention introduces 2Br-POOH on the nickel oxide interface, which fills the defects in NiOx, adjusts its work function, passivates the uncoordinated Pb2+ at the bottom of the perovskite, and promotes the longitudinal growth of the perovskite crystal on the other hand. In addition, during the preparation process, the present invention adjusts the work function of the perovskite crystal and the surface through EHOA steam treatment, which is beneficial to the transmission of carriers and improves the stability of the device. The preparation method of the present invention makes the energy level of the entire device more matched by synergistically optimizing the transport layer and the perovskite layer, which is beneficial to the extraction and collection of carriers, so that the prepared photodetector has excellent performance, has the advantages of high speed and high response, and has strong superiority.

[0036] In some embodiments of the present invention, in S1, the substrate is a transparent conductive substrate that can withstand high temperatures above 150°C.

[0037] In some embodiments, the substrate is preferably an ITO or FTO substrate.

[0038] In some embodiments of the present invention, S1 specifically includes providing a substrate and cleaning it with a detergent, deionized water ultrasound, and an isopropanol solution, respectively, and placing the substrate in a UV-ozone instrument for 25 to 35 minutes after drying. Specifically, after drying, the substrate is placed in a UV-ozone instrument for preferably 30 minutes.

[0039] In some embodiments of the present invention, in S2, the NiOx solution is a 8-12 mg / ml NiOx deionized water solution. Specifically, the concentration of the NiOx solution is preferably a 10 mg / ml NiOx deionized water solution. The preparation method is to dissolve NiOx powder in deionized water to prepare a NiOx deionized water solution with a concentration of 8-12 mg / ml.

[0040] In some embodiments of the present invention, S2 is specifically, after spin coating the NiOx solution on the pretreated substrate at a speed of 1800-2100 rpm for 28-32 seconds, placing it on a hot plate at 115-125°C, and annealing in an air environment for 12-18 minutes to obtain a pretreated film layer.

[0041] Specifically, the coating speed is preferably 2000 rpm, the coating time is preferably 30 seconds, the hot plate temperature is preferably 120° C., and the annealing time is preferably 15 minutes.

[0042] In some embodiments of the present invention, in S3, the 2Br-POOH solution is a 2Br-POOH ethanol solution with a concentration of 0.3-0.6 mg / ml.

[0043] Specifically, the concentration of the 2Br-POOH solution is preferably 0.5 mg / ml.

[0044] In some embodiments of the present invention, S3 specifically comprises: spin coating the surface of the pre-treated film layer with 2Br-POOH solution at a speed of 2800-3200 rpm for 28-32 seconds, and then annealing at 90-110° C. in a nitrogen atmosphere for 8-12 minutes to obtain a first treated part.

[0045] Specifically, the S3 is preferably to spin-coat the surface of the pre-treated film layer with a 2Br-POOH solution at a speed of 3000 rpm for 30 seconds, and then anneal at 100° C. for 10 minutes in a glove box filled with nitrogen to obtain a first treated part.

[0046] In some embodiments of the present invention, in S4, the method for preparing the perovskite precursor solution is to take the raw materials CsI, FAI and PbI2 and dissolve them in a DMF / DMSO mixed solvent in a molar stoichiometric ratio of 0.1:0.9:1 to prepare a Cs0.1FA0.9PbI3 precursor solution of about 1M.

[0047] In certain embodiments, the perovskite precursor solution is filtered through a 0.22 μm filter before use.

[0048] In some embodiments of the present invention, S4 specifically comprises taking 40-50 μl of perovskite precursor solution and dropping it onto the first treatment piece, spin-coating it at a speed of 1000-1200 rpm for 10-12s, and then spin-coating it at an acceleration speed of 1000-1200 rpm / s for 5000-5500 rpm for 30s. During this process, 280-300 μl of chlorobenzene anti-solvent is gently dropped onto the first treatment piece from the first 30-32s, and annealing is performed at 145-150°C for 10-15min in an atmosphere of ethyl 2-hydrazine-2-oxyacetate to obtain a perovskite film.

[0049] Please refer to Figure 2 In the preparation process, the present invention adjusts the work function of the perovskite crystal and the surface through EHOA (ethyl 2-hydrazine-2-oxyacetate) vapor treatment, which is beneficial to the transmission of carriers and improves the stability of the device. The preparation method of the present invention optimizes the transport layer and the perovskite layer in a coordinated manner, so that the energy level of the entire device is more matched, which is beneficial to the extraction and collection of carriers, so that the prepared photoelectric detector has excellent performance, high speed, high response, and strong superiority.

[0050] On the other hand, the present invention also provides the application of the above-mentioned method for preparing a high-speed perovskite photodetector in a photodetector device.

[0051] Example 1

[0052] 1.1 Device preparation process

[0053] In this embodiment, an ITO glass substrate is selected as a substrate, and the ITO glass substrate is cleaned with a detergent, deionized water (DI) ultrasound and an isopropanol solution. Then, the dried glass substrate is placed in a UV-ozone instrument for 30 minutes. After the NiOx solution is spin-coated on the ITO substrate at 2000 rpm for 30 seconds, it is annealed on a hot plate at 120° C. in an air environment for 15 minutes.

[0054] The NiOx precursor solution is prepared by dissolving NiOx powder in deionized water to prepare a 10 mg / ml NiOx solution.

[0055] Subsequently, the 2Br-POOH buffer layer was spin-coated on the NiOx / ITO substrate at 3000 rpm for 30 s and annealed at 100 °C for 10 min in a nitrogen-filled glove box (2Br-POOH molecules were dissolved in ethanol with an optimal concentration of 0.5 mg ml-1).

[0056] Then 50 μl of perovskite precursor solution was dropped onto the prepared NiOx substrate and spin coated at 1000 rpm for 10 s, followed by 5000 rpm for 30 s with an acceleration speed of 1000 rpm / s, during which 280 μl of CB antisolvent was gently dropped onto the perovskite wet substrate from the beginning of 32 s (CsI, FAI and PbI2 were dissolved in DMF / DMSO mixed solvent at a molar stoichiometric ratio of 0.1:0.9:1 to prepare a 1 M Cs0.1FA0.9PbI3 precursor solution. Before our use, the perovskite precursor solution was filtered with a 0.22 μm filter). Then, the perovskite film was annealed at 150 °C for 10 min in an atmosphere of ethyl 2-hydrazine-2-oxyacetate (EHOA) to obtain the perovskite film. After cooling to room temperature, C60 (25 nm), BCP (7 nm) and silver (100 nm) were thermally evaporated onto the substrate in sequence to complete the preparation of the photodetector 1 .

[0057] Comparative Example

[0058] The preparation method is the same as that of Example 1, except that the 2Br-POOH solution is not coated and the annealing is not performed in an atmosphere of ethyl 2-hydrazine-2-oxyacetate (EHOA).

[0059] The specific method is as follows: an ITO glass substrate is selected as a substrate, and the ITO glass substrate is cleaned with a detergent, deionized water (DI) ultrasound, and isopropanol solution, respectively. Then, the dried glass substrate is placed in a UV-ozone instrument for 30 minutes. After the NiOx solution is spin-coated on the ITO substrate at 2000 rpm for 30 seconds, it is annealed on a hot plate at 120°C in an air environment for 15 minutes.

[0060] The NiOx precursor solution is prepared by dissolving NiOx powder in deionized water to prepare a 10 mg / ml NiOx solution.

[0061] Then, annealing was performed at 100 °C for 10 min in a nitrogen-filled glove box (2Br-POOH molecules were dissolved in ethanol, with an optimal concentration of 0.5 mg ml-1).

[0062] Then 50μl of the perovskite precursor solution was dropped onto the prepared NiOx substrate, spin-coated at a speed of 1000rpm for 10s, and then spin-coated at an acceleration speed of 1000rpm / s for 5000rpm for 30s. During this process, 280μl of CB antisolvent was gently dropped onto the perovskite wet substrate from the first 32s (CsI, FAI and PbI2 were dissolved in a DMF / DMSO mixed solvent at a molar stoichiometric ratio of 0.1:0.9:1 to prepare a 1M Cs0.1FA0.9PbI3 precursor solution. Before we use it, the perovskite precursor solution was filtered with a 0.22μm filter). Annealed at 150°C for 10min to obtain a perovskite film. After cooling to room temperature, C60 (25nm), BCP (7nm) and silver (100nm) were thermally evaporated onto the substrate in sequence to complete the preparation of device 2. Experimental Example 1 The performance of device 1 prepared in Example 1 was tested

[0063] 1.1 Test operation

[0064] The device 1 prepared in Example 1 and the device 2 prepared in the comparative example were respectively subjected to IV curve measurement, device transient light response test, and device noise level test. The device 1 prepared in Example 1 was tested for an eye diagram of an on-off keying (OOK) data stream. The measurement results are shown in FIG. Figure 3 , Figure 4 , Figure 5 and Figure 6 . ( Figure 3-5 The target is the experimental group: device 1, and the control is the control group: device 2)

[0065] 1.2 Results Analysis

[0066] See also Figure 3 As shown in the measurement result diagram (Voltage represents voltage, Current represents current, Control-Dark represents the dark state of the control group, Control represents the control group, Target-Dark represents the dark state of the experimental group, and Target represents the experimental group), the photodetector device 1 of Example 1 after co-modification with 2Br-POOH-EHOA shows a smaller dark current (1.30nA) at -0.2V, which is lower than the dark current (3.29nA) of device 2. At the same time, the photocurrent of the device (107μA) is larger than that of device 2 (54.5μA), which is mainly due to the better surface morphology and energy level arrangement of the device.

[0067] Response speed is another important indicator of optical communication. Figure 4As shown in the measurement result diagram (Time represents time, Normalized response represents normalized response, Target represents experimental group, and Control represents control group), the response speed of the device 1 prepared in Example 1 is measured by an oscilloscope under the irradiation of nanosecond pulse laser (wavelength 517nm, pulse width 18ns, laser line width 4nm). Figure 4 It can be seen that the photoresponse speed of the double-interface passivated photodetector is 28.3ns, which is significantly faster than that of device 2. If the active area is further reduced, the response speed can be even faster. This faster speed may be attributed to the good crystallization and energy level alignment of the prepared perovskite detector.

[0068] See also Figure 5 As shown in the measurement result diagram (Frequency represents frequency, Noise current density represents noise current density, Target is the experimental group, and Control is the control group), the noise current of the device 1 prepared in Example 1 after improvement is only 6.21×10-26A 2 Hz -1 , which is much smaller than the noise current of device 2, 2.21×10-25A 2 Hz -1 It is noteworthy that all noise currents decrease linearly, indicating that 1 / f noise dominates, up to 10kHz. This low noise current level originates from the enhanced film quality and energy level alignment.

[0069] See also Figure 6 As can be seen from the measurement result diagram (Time represents time, Amplitude represents amplitude), the eye diagram collected by the dual-interface passivated photodetector of device 1 prepared in Example 1 has a clear outline and a speed of 1 Mbit / s, which indicates the accuracy of high-speed data transmission.

[0070] In summary, the device 1 prepared in Example 1 has better performance than the device 2 prepared by the conventional method, has the advantages of high speed and high response, and has strong superiority.

[0071] The above embodiment is only one implementation of the present invention, and its description is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.

Claims

1. A method for preparing a high-speed perovskite photodetector, characterized in that: The following steps are involved: S1, providing a substrate and pre-treating it to obtain a pre-treated substrate; S2, spin coating a NiOx solution on the pre-treated substrate and annealing to obtain a pre-treated film layer; S3, spin coating a 2Br-POOH solution on the surface of the pre-treated film layer and annealing to obtain a first treated part; S4, dripping the perovskite precursor solution onto the first processing piece and performing spin coating annealing to obtain a perovskite film; S5, thermally evaporating electrodes on the substrate to obtain a photodetector.

2. The method for preparing a high-speed perovskite photodetector according to claim 1, characterized in that: In the above S1, the substrate is a transparent conductive substrate that can withstand high temperatures above 150°C.

3. The method for preparing a high-speed perovskite photodetector according to claim 1, characterized in that: Specifically, S1 includes providing a substrate and cleaning it with a detergent, deionized water ultrasound, and an isopropanol solution, respectively, and placing the substrate in an ultraviolet ozone instrument for 25 to 35 minutes after drying.

4. The method for preparing a high-speed perovskite photodetector according to claim 1, characterized in that: In the S2, the NiOx solution is a 8-12 mg / ml NiOx deionized water solution.

5. The method for preparing a high-speed perovskite photodetector according to claim 1, characterized in that: Specifically, S2 is to spin-coat the pretreated substrate with a NiOx solution at a speed of 1800-2100 rpm for 28-32 seconds, place the substrate on a hot plate at 115-125° C., and anneal for 12-18 minutes in an air environment to obtain a pretreated film layer.

6. The method for preparing a high-speed perovskite photodetector according to claim 1, characterized in that: In S3, the 2Br-POOH solution is a 2Br-POOH ethanol solution with a concentration of 0.3-0.6 mg / ml.

7. The method for preparing a high-speed perovskite photodetector according to claim 1, characterized in that: Specifically, S3 includes spin coating the surface of the pre-treated film layer with a 2Br-POOH solution at a speed of 2800-3200 rpm for 28-32 seconds, and then annealing at 90-110° C. for 8-12 minutes in a nitrogen atmosphere to obtain a first treated part.

8. The method for preparing a high-speed perovskite photodetector according to claim 1, characterized in that: In S4, the method for preparing the perovskite precursor solution is to take the raw materials CsI, FAI and PbI2 and dissolve them in a DMF / DMSO mixed solvent at a molar stoichiometric ratio of 0.1:0.9:1 to prepare a Cs0.1FA0.9PbI3 precursor solution of about 1M.

9. The method for preparing a high-speed perovskite photodetector according to claim 1, characterized in that: Specifically, S4 comprises taking 40-50 μl of perovskite precursor solution and dropping it onto the first treatment piece, and then spin-coating it at a speed of 1000-1200 rpm for 10-12 s, and then spin-coating it at an acceleration speed of 1000-1200 rpm / s for 5000-5500 rpm for 30 s. During this process, 280-300 μl of chlorobenzene anti-solvent is gently dropped onto the first treatment piece from the first 30-32 s, and annealing is performed at 145-150° C. for 10-15 min in an atmosphere of ethyl 2-hydrazine-2-oxyacetate to obtain a perovskite film.

10. Application of the method for preparing a high-speed perovskite photodetector according to any one of claims 1 to 9 in a photodetector device.

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