Near-electricity alarm safety helmet adopting thermoelectric power generation and capable of automatically identifying voltage
By adopting temperature difference power generation technology and an alarm control circuit that independently recognizes voltage in the electrostatic alarm safety helmet, the problems of short power supply service life and low manual adjustment accuracy are solved, and high-precision and high-efficiency electric field strength measurement and accurate high-voltage alarm are achieved. .
Patent Information
- Application Number
- CN202411371765.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-29
- Publication Date
- 2025-02-07
AI Technical Summary
The power supply problems of existing electrostatic alarm devices, including short battery life and serious environmental constraints of photovoltaic cells; at the same time, manual adjustment knobs lead to reduced measurement accuracy and cumbersome operation.
Temperature differential power generation technology is used as a sustainable power supply method, and an alarm control circuit that independently recognizes voltage is designed. The appropriate sampling resistor branch is selected through electronic switches to achieve accurate measurement of the electric field strength of high-voltage lines.
It solves the problem of short service life of traditional devices, realizes high-precision and high-efficiency electric field strength measurement, avoids manual adjustment errors, and ensures the accuracy of high-voltage alarms.
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Figure CN119385370A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of static electricity alarm helmet devices, in particular to a near-electricity alarm helmet which uses temperature difference power generation and can automatically identify voltage. Background Art
[0002] The near-electricity alarm device is an auxiliary safety tool used by electrical workers. It determines the safe distance based on the electric field strength at the location. When the operator wearing the alarm approaches the high-voltage charged object, it can emit a continuous intermittent alarm sound to remind the operator of the danger of electric shock, playing a certain safety protection role. The near-electricity alarm device usually consists of a sensor part that can sense the electric field strength, an alarm control circuit part that can process the sensor output signal to determine the safe distance, and a power supply part that provides energy for the system.
[0003] The signal strength input to the alarm control circuit is determined by the sensitivity of the sensing device. Chinese patent CN101766355A (published on July 7, 2010) discloses an adjustable near-electric alarm helmet. This patent uses a potentiometer connected between the near-electric alarm sensing device and the alarm control circuit. By adjusting the resistance of the potentiometer to the knob, the signal strength of the signal input to the alarm control circuit is controlled, thereby adjusting the sensitivity of the sensing device. The disadvantage is that this technology requires manual adjustment of the knob, and manual operation will lead to a decrease in measurement accuracy.
[0004] The power supply part mostly adopts primary or secondary batteries and photovoltaic power generation. Chinese patent CN206197169U (published on May 31, 2017) discloses an electric field strength warning helmet sensing device and an electrostatic alarm helmet. This patent adopts a primary battery to power the equipment, but the disadvantage is that the battery life is short; Chinese patent CN205512584U (published on August 31, 2016) discloses a near-electricity alarm helmet. This patent adopts a photovoltaic power generation device to power the equipment. The photovoltaic cells using the principle of photoelectric conversion have a certain degree of protection for the environment, but the disadvantage is that they are seriously restricted by the environment.
[0005] At present, there are mainly three types of products with proximity alarm function: handheld proximity alarm, proximity alarm watch, and safety helmet with proximity alarm. The defects of various static alarms are as follows:
[0006] 1. Power supply problem of existing patents: Existing electrostatic alarm devices mostly use primary or secondary batteries or photovoltaic cells. Primary or secondary batteries cannot continuously and stably power the equipment and need to be replaced or charged after a period of use. Photovoltaic cells are severely restricted by the environment, have low power generation efficiency, are large in size, and have high maintenance costs, which affects the use of alarm equipment.
[0007] 2. Problems of existing multi-gear proximity alarm devices: In terms of gear adjustment, manual adjustment knobs are used to adjust the gears. The knobs need to be manually rotated to adjust the gears, which is cumbersome to operate and prone to gear adjustment errors. At the same time, when manually rotated, the spring sheet is prone to oxidation, damage and deformation, resulting in poor contact between the spring sheet contact and the circuit, which ultimately causes a decrease in measurement accuracy and, in severe cases, damage to the measuring device.
[0008] Existing handheld proximity alarms need to be held or temporarily pasted on tools and clothing. When operators carry a large number of tools, there is no space to hold them. Existing adhesive-backed products pasted on clothing or tools will cause secondary pollution, and improper cleaning may even affect the insulation performance of the tools. Existing proximity alarm watches are expensive and have a low penetration rate. Summary of the invention
[0009] In order to solve the above technical problems, the present invention proposes a safety helmet that uses temperature difference power generation and can automatically identify voltage for near-electricity alarm. The use of semiconductor temperature difference power generation technology with sustainable power supply solves the problem that the power supply of traditional near-electricity alarm devices needs to be charged multiple times or the battery needs to be replaced after a period of use; at the same time, an independently designed alarm control circuit is used to accurately determine the voltage value of the high-voltage line where the personnel are located, and then the sampling resistor branch that matches the voltage value is selected by adjusting the electronic switch to achieve accurate measurement of the electric field strength of the high-voltage line, thereby improving the measurement efficiency and accuracy, effectively solving the problem of cumbersome operation and large operation errors during manual adjustment, and ensuring the accuracy of the high-voltage alarm.
[0010] The technical problem to be solved by the present invention is achieved by adopting the following technical solutions:
[0011] A safety helmet with a near-electricity alarm that uses temperature difference power generation and can automatically identify voltage, comprising an electric field sensor, a safety helmet body, a circuit working status indicator board, an alarm control circuit, and a semiconductor temperature difference power generation power supply;
[0012] The electric field sensor is arranged on the top of the helmet body, and is used to induce an induced charge with the same frequency as the electric field to be measured under the action of the alternating electric field, and to process the induced charge accordingly to obtain an electric field measurement signal proportional to the electric field to be measured;
[0013] A circuit working status indicator plate, arranged on one side of the bottom of the safety helmet body, connected to the alarm control circuit, and used to display the working status of the alarm control circuit;
[0014] An alarm control circuit is arranged on the inner top of the helmet body and connected to the electric field sensor, and has the functions of automatically identifying voltage and selecting a suitable sampling resistor to measure the field strength, as well as an alarm function;
[0015] A semiconductor temperature difference power supply is connected to the circuit working status indicator board and is used to supply power to the alarm control circuit.
[0016] As a further improvement of the present invention, the circuit working status indicator panel is provided with a power switch for controlling the on and off of the semiconductor temperature difference power generation power supply, a red LED light for alarm, a first yellow LED light and a second yellow LED light for detecting whether the alarm control circuit is working normally, and a green LED light for indicating that the gear has been selected.
[0017] As a further improvement of the present invention, the red LED lamp and the green LED lamp are connected to the alarm control circuit, the input end of the first yellow LED lamp is connected to the positive pole of the semiconductor temperature difference power generation power supply, and the output end is connected to the alarm control circuit, and the input end of the second yellow LED lamp is connected to the alarm control circuit, and the output end is connected to the negative pole of the semiconductor temperature difference power generation power supply.
[0018] As a further improvement of the present invention, when the first yellow LED light and the second yellow LED light are on at the same time, it indicates that the alarm control circuit is working normally; when one or both of the first yellow LED light and the second yellow LED light are not on, it indicates that the alarm control circuit is not working properly.
[0019] As a further improvement of the present invention, the alarm control circuit includes a bandpass filter, an A / D conversion module, an MSP430 single-chip microcomputer, an electronic switch CD4051, and a sampling resistor.
[0020] As a further improvement of the present invention, the input end of the bandpass filter is connected to the output end of the electric field sensor, and the output end is connected to the input end of the A / D conversion module, the output end of the A / D conversion module is connected to the input end of the MSP430 microcontroller, and the output end of the MSP430 microcontroller is connected to the electronic switch CD4051, the red LED light, the first yellow LED light, the second yellow LED light, and the green LED light.
[0021] As a further improvement of the present invention, the sampling resistors include resistors R1, R2, R3, R4, R5, R6, and R7. One end of the seven sampling resistors is connected to the I0 / O0~I7 / O7 ports of the electronic switch CD4051 to the ground, and the other ends are commonly connected to the electric field sensor and form seven branches with the red LED light and the green LED light. The electronic switch CD4051 is used to control the opening and closing of the seven branches.
[0022] As a further improvement of the present invention, the seven branches correspond to measuring the electric field strength under seven different voltages, specifically including: branch one is used to measure the electric field strength under 6KV, branch two is used to measure the electric field strength under 10KV, branch three is used to measure the electric field strength under 27.5KV, branch four is used to measure the electric field strength under 35KV, branch five is used to measure the electric field strength under 66KV, branch six is used to measure the electric field strength under 110KV, and branch seven is used to measure the electric field strength under 220KV.
[0023] As a further improvement of the present invention, the semiconductor temperature difference power supply includes a semiconductor temperature difference generator, a booster and a DC-DC voltage stabilizing module.
[0024] As a further improvement of the present invention, one end of the semiconductor temperature difference generator is attached to the outer surface of the safety helmet body, and the other end is attached to the inner surface of the safety helmet body, the output end of the semiconductor temperature difference generator is connected to the input end of the booster, the output end of the booster is connected to the input end of the DC-DC voltage regulator module, and the output end of the DC-DC voltage regulator module is connected to the first yellow LED lamp and the second yellow LED lamp.
[0025] The beneficial effects of the present invention are:
[0026] The present invention proposes a safety helmet for near-electricity alarm which adopts temperature difference power generation and can automatically identify voltage, realizes accurate measurement of electric field strength of high-voltage line, ensures accuracy of high-voltage alarm, and uses sustainable power supply semiconductor temperature difference power generation technology to power the equipment. The advantage of the invention is that temperature difference power generation can directly convert heat energy into electric energy by using Seibel effect, has the advantages of no noise, no pollution, long service life (service life exceeds ten years), stable performance, small internal resistance, high temperature resistance, and maintenance-free. The safety helmet can be quickly started in a cold environment of minus 40 degrees Celsius, has strong environmental adaptability, and solves the problem that the power supply of traditional near-electricity alarm device needs to be charged or replaced for many times after being used for a period of time; at the same time, an independently designed alarm control circuit is adopted to accurately judge the voltage value of the high-voltage line at the position of the personnel, and then the sampling resistance branch matching the voltage value is selected by adjusting the electronic switch to realize accurate measurement of the electric field strength of the high-voltage line, thereby improving measurement efficiency and accuracy, effectively solving the problems of cumbersome operation and large operation error during manual adjustment, and ensuring accuracy of high-voltage alarm. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] The present invention is further described below in conjunction with the accompanying drawings and embodiments:
[0028] Figure 1 It is a side view structural schematic diagram of the present invention;
[0029] Figure 2 It is a bottom view structural schematic diagram of the present invention;
[0030] Figure 3 It is a partial diagram of the present invention;
[0031] Figure 4 It is the design principle diagram of the alarm control system in the present invention;
[0032] Figure 5 This is a schematic diagram of the alarm control system circuit in the present invention;
[0033] Figure 6 It is the general principle diagram of the alarm control circuit in the present invention;
[0034] Figure 7 A logical relationship diagram for different branch selections in the present invention;
[0035] Figure 8 is a circuit diagram of a bandpass filter in the present invention;
[0036] Fig. 9 This is the relationship diagram between the temperature difference of the TEP1-097T200 temperature difference semiconductor chip and the output voltage;
[0037] Fig.10 This is a boost circuit diagram of the present invention.
[0038] In the figure: 1. Electric field sensor; 2. Safety helmet body; 3. Circuit working status indicator board; 4. Alarm control circuit; 5. Semiconductor temperature difference generator; 6. Power switch; 7. Red LED light; 8. First yellow LED light; 9. Second yellow LED light; 10. Green LED light. DETAILED DESCRIPTION
[0039] In order to make the technical means, creative features, objectives and effects achieved by the present invention easier to understand, the present invention is further described below in conjunction with the accompanying drawings and embodiments.
[0040] like Figures 1 to 3 As shown, a safety helmet with near-electricity alarm that uses temperature difference power generation and can automatically identify voltage includes an electric field sensor 1, a safety helmet body 2, a circuit working status indicator board 3, an alarm control circuit 4, and a semiconductor temperature difference power generation power supply.
[0041] At present, the measurement signal that can reflect the alternating electric field is mainly the induced current or induced voltage generated by the induced charge between the two electrodes of the alternating electric field sensor: when the two electrodes of the sensor are short-circuited internally through a resistor, the induced voltage generates an induced current on the resistor and can be used as a measurement signal; when a measuring capacitor is connected between the two electrodes of the sensor, the induced voltage generated on the capacitor by the induced charge can also be used as a measurement signal.
[0042] In this embodiment, the sensor used adopts the former mode, that is, the two electrodes of the sensor are connected via a measuring resistor, that is, the measured current is proportional to the electric field strength.
[0043] In this embodiment, the electric field sensor 1 is arranged on the top of the safety helmet body 2, and is used to induce induced charges that change at the same frequency as the electric field to be measured under the action of the alternating electric field, and perform corresponding processing on the induced charges to obtain an electric field measurement signal that is proportional to the electric field to be measured.
[0044] In this embodiment, the circuit working status indicator plate 3 is arranged on one side of the bottom of the safety helmet body 2 , connected to the alarm control circuit 4 , and used to display the working status of the alarm control circuit 4 .
[0045] The circuit working state indicator board 3 is composed of a power switch 6 , a red LED light 7 , a first yellow LED light 8 , a second yellow LED light 9 , and a green LED light 10 .
[0046] The power switch 6 is used to control the on and off of the semiconductor temperature difference power supply; the red LED light 7 is used for alarm; the first yellow LED light 8 and the second yellow LED light 9 are used to detect whether the alarm control circuit 4 is working normally. Specifically, the input end of the first yellow LED light 8 is connected to the positive pole of the semiconductor temperature difference power supply, and the output end is connected to the alarm control circuit 4. The input end of the second yellow LED light 9 is connected to the alarm control circuit 4, and the output end is connected to the negative pole of the semiconductor temperature difference power supply. When the first yellow LED light 8 and the second yellow LED light 9 are on at the same time, it means that the alarm control circuit 4 is working normally. When one or both of the first yellow LED light 8 and the second yellow LED light 9 are not on, it means that the alarm control circuit 4 is not working properly. The green LED light 10 is used to prompt that the gear position has been selected.
[0047] In this embodiment, the alarm control circuit 4 is arranged at the inner top of the helmet body 2, connected to the electric field sensor 1, and has the functions of automatically identifying the voltage and selecting the appropriate sampling resistor to measure the field strength, as well as the alarm function. Figures 4 to 6 As shown, the alarm control circuit 4 is composed of a bandpass filter, an A / D conversion module, an MSP430 single-chip microcomputer, an electronic switch CD4051, and a sampling resistor.
[0048] Specifically, the input end of the bandpass filter is connected to the output end of the electric field sensor 1, and the output end is connected to the input end of the A / D conversion module. The output end of the A / D conversion module is connected to the input end of the MSP430 microcontroller. The output end of the MSP430 microcontroller is connected to the electronic switch CD4051, the red LED light 7, the first yellow LED light 8, the second yellow LED light 9, and the green LED light 10.
[0049] The bandpass filter is composed of a second-order high-pass filter and a second-order low-pass filter. The design circuit diagram is as follows: Figure 8 As shown, the center frequency of the bandpass filter is 50 Hz, the attenuation rate is 40 dB / decade, and the attenuation is 100 times for every 40 dB / decade increase.
[0050] The MSP430 microcontroller has a rich addressing mode (7 source operand addressing, 4 destination operand addressing), 27 concise core instructions and a large number of analog instructions; a large number of registers and on-chip data memory can participate in a variety of operations; there is also an efficient table lookup processing method; it has a high processing speed, and the instruction cycle is 125μs under the drive of 8MHz crystal. In terms of operation speed, the MSP430 series microcontroller can achieve a 125μs instruction cycle under the drive of 8MHz crystal. The 16-bit data width, 125μs instruction cycle and multifunctional hardware multiplier (capable of multiplication and addition) can realize certain algorithms of digital signal processing (such as FFT, etc.). The MSP430 series microcontroller has many interrupt sources, and can be nested arbitrarily, which is flexible and convenient to use. When the system is in a power-saving standby state, it only takes 6μs to wake it up with an interrupt request. The ultra-low power consumption MSP430 microcontroller has ultra-low power consumption. The power supply voltage of the MSP430 series microcontroller is 1.8V to 3.6V. Therefore, when it runs at a 1MHz clock, the chip current will be between 0.1μA and 400μA. There is one active mode (AM) and five low power modes (LPM0 to LPM4) in the system. In the waiting mode, the power consumption is 0.7A, and in the power saving mode, it can be as low as 0.1A.
[0051] The sampling resistors include resistors R1, R2, R3, R4, R5, R6 and R7. One end of the seven sampling resistors is connected to ports I0 / O0 to I7 / O7 of the electronic switch CD4051 (corresponding to numbers 1, 2, 5, 12, 13, 14 and 15) to ground, and the other ends are commonly connected to the electric field sensor 1 and form seven branches with the red LED lamp 7 and the green LED lamp 10. The electronic switch CD4051 is used to control the opening and closing of the seven branches.
[0052] The seven branches measure the electric field strength under seven different voltages, including: branch 1 is used to measure the electric field strength under 6KV, branch 2 is used to measure the electric field strength under 10KV, branch 3 is used to measure the electric field strength under 27.5KV, branch 4 is used to measure the electric field strength under 35KV, branch 5 is used to measure the electric field strength under 66KV, branch 6 is used to measure the electric field strength under 110KV, and branch 7 is used to measure the electric field strength under 220KV. (Branch 7 is in the on state by default, and the other branches are in the closed state), and the voltage levels corresponding to the branches are shown in Table 1.
[0053] Table 1
[0054]
[0055] Furthermore, the specific process of the alarm control circuit 4 realizing the function of self-identifying voltage and selecting a suitable sampling resistor to measure the field strength is as follows:
[0056] The function of realizing the MSP430 single chip microcomputer and program to select the appropriate branch to measure the electric field strength of the high-voltage line is to use the characteristics of different electric field strengths sensed by the electric field sensor at the same distance d and different high voltages. The electric field sensor 1 is used to collect the electric field signal of the alternating electric field, and after collection, it is transmitted to the bandpass filter through branch 7. The bandpass filter performs filtering. After the bandpass filter is filtered, the electric field signal is transmitted to the A / D conversion module for processing. The A / D conversion module converts the signal into a digital signal. After the A / D conversion module is processed, the digital signal is transmitted. The signal is transmitted to the MSP430 microcontroller through the IO port. After receiving the signal, the MSP430 microcontroller applies the logical relationship of the input digital signal to determine the voltage value of the high-voltage line at the location. After the MSP430 microcontroller makes the determination, it controls the opening and closing of the corresponding branch by controlling the electronic switch CD4051 (CD4051 is equivalent to a single-pole eight-throw switch, and its truth table is shown in Table 2) to select a suitable sampling resistor to measure the electric field strength under the corresponding voltage. When the branch is selected, the MSP430 microcontroller controls the green LED to light up, indicating that the gear has been adjusted.
[0057] Table 2
[0058]
[0059] The specific operations for realizing self-identification of voltage and selecting a suitable sampling resistor (or a suitable branch) to measure the field strength are as follows:
[0060] The present invention stops at a fixed distance interval d≥7m from the high-voltage line, waiting for the system to identify the voltage type of the high-voltage line. When the green LED 10 lights up, it indicates that the gear position has been adjusted, and the field strength can be accurately measured.
[0061] The logical relationship of using MSP430 microcontroller and program to select appropriate branches to measure the electric field strength of high-voltage lines:
[0062] Under the same distance d, the electric field strength under different voltages measured by branch seven is shown in Table 2. When selecting a suitable branch, the default branch is branch seven, that is, INH=0, C=1, B=1, and A=1 of CD4051. The electric field strength (V / m) of different voltages under the same distance d is measured by branch seven. When the MSP430 microcontroller obtains the measured value E, it is compared with e7, e6, e5, e4, e3, e2, and e1 in turn. When E≥e7, branch seven is selected; when e6≤E, branch six is selected; when e5≤E, branch five is selected; when e4≤E, branch four is selected; when e3≤E, branch three is selected; when e2≤E=, branch two is selected; when e1≤E, branch one is selected. The voltage gear corresponding to the branch is used to determine which branch is used to measure the electric field strength to be measured. The logic flow chart is shown in Figure 7 shown.
[0063] Furthermore, the alarm control circuit 4 implements the alarm function as follows:
[0064] When the branch is selected, the alarm control circuit turns on the alarm function. The specific working method is: the electric field sensor 1 collects the electric field signal, and the signal is transmitted to the bandpass filter for filtering after the collection. After the bandpass filter is filtered, the signal is transmitted to the A / D conversion module through a branch for processing. The A / D conversion module converts the signal into a digital signal. After the A / D conversion module is processed, the digital signal is transmitted to the MSP430 microcontroller through the IO port. The MSP430 microcontroller compares the input digital signal with the set threshold. When the set threshold is exceeded, the MSP430 microcontroller controls the alarm circuit to work, and the MSP430 microcontroller controls the red LED light 6 to flash, reminding the workers to evacuate to a safe distance. When the workers evacuate to a safe distance, the red LED light 6 does not flash. The relationship between the alarm distance and the voltage level is shown in Table 3.
[0065] Table 3
[0066]
[0067] In this embodiment, the semiconductor temperature difference power supply is connected to the circuit working status indicator board 3 to supply power to the alarm control circuit 4 .
[0068] The semiconductor thermoelectric power supply includes a semiconductor thermoelectric generator 5, a booster and a DC-DC voltage regulator module. The semiconductor thermoelectric power generation technology is used to power the equipment. The advantage is that thermoelectric power generation can directly convert heat energy into electrical energy using the Seibel effect, and has the advantages of no noise, no pollution, long life (service life of more than ten years), stable performance, small internal resistance, high temperature resistance, and maintenance-free. It can be quickly started in a cold environment of minus 40 degrees Celsius, and has strong environmental adaptability.
[0069] The output end of the semiconductor temperature difference generator 5 is connected to the input end of the booster, the output end of the booster is connected to the input end of the DC-DC voltage stabilizing module, and the output end of the DC-DC voltage stabilizing module is connected to the first yellow LED lamp 8 and the second yellow LED lamp 9. The booster raises the voltage to about 5V, and the DC-DC voltage stabilizing module stabilizes the voltage to 5V.
[0070] Specifically, the semiconductor thermoelectric generator 5 has one end coated with black thermal conductive material and attached to the outer surface of the hat, and the other end also coated with black thermal conductive material is placed inside the hat and attached to the skin or at a certain distance from the skin, wherein the end placed inside the hat can maintain a temperature t≥32°C, and the temperature of the end attached to the outer surface of the hat is t<10°C in cold weather, rainy days or at night outdoors, and the temperature of the end attached to the outer surface of the hat is t>60°C in hot weather. When the semiconductor thermoelectric generator works between high and low temperature heat sources with temperatures Th and Tc respectively, according to the Seebeck effect, when the temperature difference between the two ends of the device is Th-Tc, the Seebeck voltage generated in the circuit is:
[0071] V0=δNP(Th-Tc)
[0072] This voltage is divided into two parts, one part is applied to the internal resistance R of the generator itself, and the other part is added to the load resistance RL. The voltage on the load resistance is the actual output voltage V of the generator, which can be expressed as:
[0073] V=δNP(Th-Tc)RL / (RL+R)
[0074] At this time, the current in the circuit is:
[0075] I=δNP(Th-Tc) / (R L +R)
[0076] Let's take a TEP1-097T200 temperature difference semiconductor chip as an example. Its parameters are as follows: Fig. 9 As shown, the open circuit voltage and current data within the minimum temperature difference range of 20° C. are shown in Table 4. It can be seen that the eight groups of semiconductor thermoelectric generators 5 can generate a voltage of about 3.2V.
[0077] Table 4
[0078]
[0079] Furthermore, the booster adopts a boost circuit, that is, a DC boost circuit, which can have an output voltage higher than the input voltage, and can meet the need of the present invention to increase the voltage from 3.2v to 5v. Taking a TPS61200 boost converter in the boost family as an example, the TPS61200 adopts a small size 3mm×3mmQFN packaging technology, which can automatically convert into a boost mode or a buck mode according to the size of the input voltage. Its output voltage can be set to a fixed output, and its quiescent current is less than 55μA. When the input voltage is 0.5V, it starts working at full load. When the input voltage of TSPS61200 is 0.3v to 5.5v, the output voltage can be adjusted to 1.8v to 5.5v. When the output voltage is fixed at 5v, the output current is 600mA. At the same time, there is output short-circuit protection and overheating protection (operating temperature range -40℃~+85℃). When the output power is low, there is an energy-saving mode to improve efficiency, and it can also be forced to work at a fixed efficiency. When the power is turned off, the load is disconnected from the input end. The boost circuit designed for this purpose is as follows Fig.10 shown.
[0080] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions only describe the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.
Claims
1. A safety helmet that uses temperature difference to generate electricity and can automatically identify voltage, characterized by: It comprises an electric field sensor (1), a safety helmet body (2), a circuit working status indicator board (3), an alarm control circuit (4), and a semiconductor temperature difference power generation power supply; An electric field sensor (1) is arranged on the top of the safety helmet body (2) and is used to induce an induced charge that changes at the same frequency as the electric field to be measured under the action of an alternating electric field, and to perform corresponding processing on the induced charge to obtain an electric field measurement signal that is proportional to the electric field to be measured; A circuit working state indicator plate (3), arranged on one side of the bottom of the safety helmet body (2), connected to the alarm control circuit (4), and used to display the working state of the alarm control circuit (4); An alarm control circuit (4) is arranged on the inner top of the safety helmet body (2), connected to the electric field sensor (1), and has the functions of automatically identifying voltage and selecting a suitable sampling resistor to measure the field strength, as well as an alarm function; A semiconductor temperature difference power generation power source is connected to the circuit working status indicator board (3) and is used to supply power to the alarm control circuit (4).
2. According to claim 1, a safety helmet with near-electricity alarm that uses temperature difference power generation and can automatically identify voltage, characterized in that: The circuit working state indicator panel (3) is provided with a power switch (6) for controlling the on and off of the semiconductor temperature difference power generation power supply, a red LED light (7) for alarming, a first yellow LED light (8) and a second yellow LED light (9) for detecting whether the alarm control circuit (4) is working normally, and a green LED light (10) for indicating that a gear position has been selected.
3. According to claim 2, a safety helmet with near-electricity alarm that uses temperature difference power generation and can automatically identify voltage, characterized in that: The red LED light (7) and the green LED light (10) are connected to the alarm control circuit (4); the input end of the first yellow LED light (8) is connected to the positive electrode of the semiconductor temperature difference power generation power supply, and the output end is connected to the alarm control circuit (4); the input end of the second yellow LED light (9) is connected to the alarm control circuit (4), and the output end is connected to the negative electrode of the semiconductor temperature difference power generation power supply.
4. The safety helmet with near-electricity alarm that uses temperature difference power generation and can automatically identify voltage according to claim 3, characterized in that: When the first yellow LED light (8) and the second yellow LED light (9) are lit at the same time, it indicates that the alarm control circuit (4) is working normally; when one or both of the first yellow LED light (8) and the second yellow LED light (9) are not lit, it indicates that the alarm control circuit (4) is not working normally.
5. According to claim 3, a safety helmet with near-electricity alarm that uses temperature difference power generation and can automatically identify voltage, characterized in that: The alarm control circuit (4) comprises a bandpass filter, an A / D conversion module, an MSP430 single chip microcomputer, an electronic switch CD4051, and a sampling resistor.
6. The safety helmet with near-electricity alarm that uses temperature difference power generation and can automatically identify voltage according to claim 5, characterized in that: The input end of the bandpass filter is connected to the output end of the electric field sensor (1), and the output end is connected to the input end of the A / D conversion module; the output end of the A / D conversion module is connected to the input end of the MSP430 single-chip microcomputer; and the output end of the MSP430 single-chip microcomputer is connected to the electronic switch CD4051, the red LED lamp (7), the first yellow LED lamp (8), the second yellow LED lamp (9), and the green LED lamp (10).
7. The safety helmet with near-electricity alarm that uses temperature difference power generation and can automatically identify voltage according to claim 5, characterized in that: The sampling resistors include a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, and a resistor R7. One end of the seven sampling resistors is connected to the I0 / O0-I7 / O7 ports of the electronic switch CD4051 to the ground, and the other ends are commonly connected to the electric field sensor (1) and form seven branches with the red LED lamp (7) and the green LED lamp (10). The electronic switch CD4051 is used to control the opening and closing of the seven branches.
8. The safety helmet with near-electricity alarm that uses temperature difference power generation and can automatically identify voltage according to claim 7, characterized in that: The seven branches correspond to measuring the electric field strength under seven different voltages, specifically including: Branch 1 is used to measure the electric field strength under 6KV, Branch 2 is used to measure the electric field strength under 10KV, Branch 3 is used to measure the electric field strength under 27.5KV, Branch 4 is used to measure the electric field strength under 35KV, Branch 5 is used to measure the electric field strength under 66KV, Branch 6 is used to measure the electric field strength under 110KV, and Branch 7 is used to measure the electric field strength under 220KV.
9. The safety helmet with near-electricity alarm that uses temperature difference power generation and can automatically identify voltage according to claim 3, characterized in that: The semiconductor temperature difference power generation power source comprises a semiconductor temperature difference generator (5), a booster and a DC-DC voltage stabilizing module.
10. The safety helmet with near-electricity alarm that uses temperature difference power generation and can automatically identify voltage according to claim 9, characterized in that: One end of the semiconductor temperature difference generator (5) is attached to the outer surface of the helmet body (2), and the other end is attached to the inner surface of the helmet body (2); the output end of the semiconductor temperature difference generator (5) is connected to the input end of the booster; the output end of the booster is connected to the input end of the DC-DC voltage stabilizing module; and the output end of the DC-DC voltage stabilizing module is connected to the first yellow LED lamp (8) and the second yellow LED lamp (9).
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