A crystal bar fixing device, a crystal bar processing system and method
By designing a fixing device and processing system for silicon carbide crystal rods, using vacuum adsorption and hollow structure directional measurement technology, the problem of insufficient fixing and directional measurement accuracy of crystal rods of different thicknesses is solved, and high-precision crystal rod orientation and bonding is achieved.
Patent Information
- Application Number
- CN202411498706.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-25
- Publication Date
- 2025-06-20
- Estimated Expiration
- 2044-10-25
AI Technical Summary
The existing silicon carbide crystal rod processing systems are difficult to be compatible with crystal rod fixation of different thicknesses, and the directional measurement accuracy is insufficient.
A crystal rod fixing device is designed to absorb a single end face of the crystal rod through the vacuum adsorption area, and to use the hollow structure and detecting light for directional measurement. Combined with the limiting mechanism and the bonding device, the fixing and precise directional bonding of crystal rods of different thicknesses is achieved.
The device is compatible with crystal rod fixing of different thicknesses, improving the accuracy of directional measurement and ensuring accurate orientation and bonding of crystal rods.
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Figure CN119388599B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor ingot processing, and particularly relates to an ingot fixing device, an ingot processing system and a method. Background Art
[0002] As a representative of the third-generation wide bandgap semiconductors, silicon carbide is mainly applied to emerging industries such as new energy, high-speed rail, and 5G. Due to its own characteristics, it plays an irreplaceable role in individual fields. With the rapid development of related industries, the field of silicon carbide ingot processing has also received great development opportunities. The growth and processing difficulties of silicon carbide materials are important factors restricting its development and popularization. At present, the production specifications of finished silicon carbide ingots reach 4-8 inches, with a general thickness of 5-25 mm, and the thickness of individual advanced processes can reach about 30 mm.
[0003] Due to the characteristics of the silicon carbide ingot with a thin and pancake-like specification, the conventional fixing scheme for the ingot in the processing system is not suitable for the round cake-shaped silicon carbide crystal. In addition, the existing system also lacks in the orientation measurement accuracy of the ingot. Summary of the Invention
[0004] Based on the above situation, the main object of the present invention is to provide an ingot fixing device, an ingot processing system and a method.
[0005] To achieve the above object, the technical solution adopted by the present invention is as follows:
[0006] The present invention provides an ingot fixing device for fixing an ingot. The ingot includes a side surface and opposite first and second end faces. The device includes:
[0007] A carrier table, which is plate-shaped and is provided with a hollow structure for passing through detection light. The hollow structure penetrates the carrier table. The carrier table includes opposite first and second surfaces. A vacuum adsorption area is arranged on the first surface around the hollow structure. The vacuum adsorption area is used for adsorbing the first end face of the ingot.
[0008] When the first end face of the ingot is adsorbed on the vacuum adsorption area, a part of the first end face of the ingot is exposed at the hollow structure, so that the detection light projected from the second surface side of the carrier table can pass through the hollow structure and shine on the first end face.
[0009] A relief groove for making way for the detection light is formed on the second surface of the carrier table. The depth of the relief groove is less than the distance between the first surface and the second surface. One end of the relief groove extends to the hollow structure.
[0010] The depth of the avoidance groove gradually increases from the end far away from the hollow structure to the end close to the hollow structure;
[0011] There are multiple avoidance grooves, which are symmetrically arranged with the hollow structure as the center.
[0012] Preferably, a limiting and mating structure is provided on the crystal bar;
[0013] The device further includes a limiting mechanism, which is arranged outside the vacuum adsorption area. The limiting mechanism cooperates with the limiting and mating structure on the crystal bar to limit the position of the crystal bar.
[0014] Preferably, the limiting and mating structure provided on the crystal bar is a notch, and the notch is arranged on the side surface;
[0015] The limiting mechanism includes an elastic ejector pin, a first roller and a second roller. The first roller and the second roller are located on opposite sides of the elastic ejector pin. When the crystal bar is fixed, the elastic ejector pin abuts in the notch, the first roller and the second roller are in contact with the side surface of the crystal bar, and the elastic ejector pin, the first roller and the second roller cooperate to limit the position of the crystal bar;
[0016] When the carrier extends in the vertical direction, the elastic ejector pin, the first roller and the second roller are located above the crystal bar, and the elastic ejector pin is located at the top of the crystal bar.
[0017] Preferably, the limiting and mating structure provided on the crystal bar is a first flat edge and a second flat edge that are perpendicular to each other, and the first flat edge and the second flat edge are arranged on the side surface;
[0018] The limiting mechanism includes a top limiting block and a side limiting block. When the crystal bar is fixed, the first flat edge abuts against the top limiting block, the second flat edge abuts against the side limiting block, and the top limiting block and the side limiting block cooperate to limit the position of the crystal bar;
[0019] When the carrier extends in the vertical direction, the top limiting block is located at the top of the crystal bar;
[0020] The side limiting block is one, or two arranged on opposite sides of the crystal bar.
[0021] Preferably, the crystal bar is fixed on a sacrificial material;
[0022] A sacrificial material accommodation space is provided between the carrier and the limiting mechanism and / or below the crystal bar fixing device. When the crystal bar is fixed, the sacrificial material is located in the sacrificial material accommodation space;
[0023] The area corresponding to the sacrificial material accommodation space is arranged offset from the area where the vacuum adsorption space is located.
[0024] Preferably, the device includes a driving mechanism that can drive the carrier table to rotate to different positions to facilitate the loading of the ingot and / or adjust the crystal orientation deviation of the ingot and / or facilitate the bonding of the ingot. The rotation direction of the carrier table is perpendicular to the carrier table.
[0025] Preferably, the limiting mechanism is fixed on the carrier table;
[0026] A soft material layer is provided on the first surface of the carrier table, and the soft material layer covers the vacuum adsorption area.
[0027] The present invention also provides a crystal bar processing system, including the crystal bar fixing device, the orientation measuring device and the bonding device as described above; the orientation measuring device is arranged on one side of the second surface of the carrier table, and the crystal bar fixing device and the orientation measuring device cooperate to provide orientation for the crystal bar; the crystal bar fixing device and the bonding device cooperate to fix the crystal bar on the base.
[0028] The present invention also provides a crystal bar processing method, which is implemented by a processing system. The crystal bar processing system includes the crystal bar fixing device, the orientation measuring device and the bonding device as described above;
[0029] The crystal bar processing method includes the steps:
[0030] Loading: The driving mechanism drives the carrier table to move to a first position, and the carrier table extends in the horizontal direction to facilitate placing the crystal bar in the vacuum adsorption area;
[0031] Vacuum adsorption: The crystal bar is fixed to the vacuum adsorption area through vacuum adsorption;
[0032] Moving the carrier table: The driving mechanism drives the carrier table to move to a second position, and the carrier table extends in the vertical direction;
[0033] Orientation: The detection light emitted by the orientation measuring device passes through the hollow structure and shines on the first end face of the crystal bar, and the diffracted detection light is analyzed to obtain the crystal orientation deviation angle and the crystal orientation deviation direction of the crystal bar.
[0034] Preferably, after the loading step, the method further includes the step:
[0035] Limiting: The limiting mechanism acts to limit the position of the crystal bar;
[0036] After the orientation step, the method further includes the steps of:
[0037] Adjusting the crystal orientation deviation; the driving mechanism drives the carrier to rotate, the rotation angle is equal to the crystal orientation deviation angle, and the rotation direction is opposite to the crystal orientation deviation direction;
[0038] Bonding; the bonding device moves the base coated with adhesive to below the crystal bar and contacts the sacrificial material at the bottom of the crystal bar;
[0039] Unloading; after the adhesive is cured, the vacuum adsorption on the crystal bar is released.
[0040] The crystal bar fixing device, crystal bar processing system and method provided by the present invention can be compatible with the fixing of crystal bars of different thicknesses by adsorbing and fixing a single end face of the crystal bar. After the crystal bar is fixed by the adsorption action of the crystal bar fixing device, it can assist the orientation measuring device and the bonding device to complete the orientation and bonding of the crystal bar. During orientation, since the detection light is projected onto the first end face through the hollow structure, the first end face serves as both the orientation measurement surface and the adsorption fixing surface, eliminating the variables brought by the differences in the surface morphologies of different crystal bars, and improving the orientation measurement accuracy of the system or device.
[0041] Other beneficial effects of the present invention will be described in the specific implementation manners through the introduction of specific technical features and technical solutions. Those skilled in the art should be able to understand the beneficial technical effects brought by the technical features and technical solutions through the introduction of these technical features and technical solutions. Description of the Drawings
[0042] The following will describe the preferred embodiments of the crystal bar fixing device and crystal bar processing system according to the present invention with reference to the drawings. In the drawings:
[0043] Figure 1 is a three-dimensional structure schematic diagram of the crystal bar involved in the embodiment of the present invention.
[0044] Figure 2 is Figure 1 a front view structure schematic diagram of the crystal bar with sacrificial material in
[0045] Figure 3 is a front view structure schematic diagram of the crystal bar with sacrificial material in another embodiment.
[0046] Figure 4 is a module structure schematic diagram of the crystal bar processing system in the embodiment of the present invention.
[0047] Figure 5 is a three-dimensional structure schematic diagram of the crystal bar fixing device in the embodiment of the present invention.
[0048] Figure 6Schematic front view structure diagram of the ingot fixing device according to an embodiment of the present invention.
[0049] Figure 7 Schematic front view structure diagram of the ingot fixing device according to an embodiment of the present invention after fixing the ingot.
[0050] Figure 8 Schematic perspective structure diagram of the ingot fixing device according to an embodiment of the present invention from another perspective.
[0051] Figure 9 Schematic front view structure diagram of the ingot fixing device according to an embodiment of the present invention from another perspective.
[0052] Figure 10 Schematic diagram of the ingot fixing device according to an embodiment of the present invention in cooperation with orientation measurement.
[0053] Figure 11 Schematic diagram of the driving path of the ingot fixing device according to an embodiment of the present invention.
[0054] Figure 12 Schematic front view structure diagram of the ingot fixing device in another embodiment of the present invention after fixing the ingot.
[0055] Figure 13 Schematic front view structure diagram of the ingot fixing device according to an embodiment of the present invention after fixing the ingot from another perspective. Detailed implementation manners
[0056] The following describes the present invention based on embodiments, but the present invention is not limited to these embodiments. In the following detailed description of the present invention, some specific details are described in detail. In order to avoid obscuring the essence of the present invention, well-known methods, processes, procedures, and components are not described in detail.
[0057] In addition, those of ordinary skill in the art should understand that the drawings provided herein are for illustrative purposes only, and the drawings are not necessarily drawn to scale.
[0058] Unless the context clearly requires otherwise, the words "including", "comprising", and the like throughout the specification and claims should be construed in an inclusive sense rather than an exclusive or exhaustive sense; that is, the meaning of "including but not limited to".
[0059] In the description of the present invention, it should be understood that the terms "first", "second", etc. are only used for descriptive purposes and cannot be construed as indicating or implying relative importance. In addition, in the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more.
[0060] The present invention provides a crystal bar processing system for processing crystal bars, and its processing procedures include, but are not limited to, one or more of loading, orientation, bonding, cutting, chamfering, and grinding. In the present invention, the processing of the crystal bar by the crystal bar processing system at least includes orientation and bonding.
[0061] It can be understood that the crystal bar includes, but is not limited to, a silicon carbide crystal bar, and can also be other crystal bars such as a gallium nitride crystal bar that can be used in semiconductor manufacturing.
[0062] Please refer to Figure 1 and Figure 2 , the crystal bar 8 is in a columnar shape, which includes a side surface 8c, and opposite first end surface 8a and second end surface 8b. The crystal bar 8 is fixed on the sacrificial material 9. In the state to be bonded, the sacrificial material 9 is fixed at the bottom of the crystal bar 8.
[0063] As an embodiment, the crystal bar 8 is a silicon carbide crystal bar, and the sacrificial material 9 is a graphite support.
[0064] As an embodiment, a limiting and mating structure 81 is provided on the crystal bar 8. In this embodiment, the limiting and mating structure 81 is a notch 811a. The notch 811a is provided on the side surface 8c and penetrates from the first end surface 8a to the second end surface 8b.
[0065] As an embodiment, the cross-sectional shape of the notch 811a in the length direction of the crystal bar 8 is V-shaped, and it can also be other shapes convenient for limiting the crystal bar 8, such as hemispherical, U-shaped, and so on.
[0066] Please refer to Figure 3 , as an embodiment, the difference between the crystal bar 8' and Figure 2 the crystal bar 8 shown in is only that the specific structure of the limiting and mating structure 81' provided on the crystal bar 8' is different. In this embodiment, the limiting and mating structure 81' is a first flat edge 812a and a second flat edge 812b that are perpendicular to each other, and the first flat edge 812a and the second flat edge 812b are provided on the side surface 8c'. In some embodiments, the first flat edge 812a and the second flat edge 812b extend from the first end surface 8a' of the crystal bar 8' to the second end surface (not labeled).
[0067] It can be understood that in Figure 3 the perspective, the first flat edge 812a is provided on the top of the crystal bar 8', and the second flat edge 812b is provided on the right side of the crystal bar 8'. Actually, the second flat edge 812b can also be provided on the left side of the crystal bar 8'.
[0068] It can be understood that the specific structure of the ingot 8 is not limited, and a limiting and mating structure 81 can be provided thereon. The limiting and mating structure 81 cooperates with other mechanisms to limit the position of the ingot 8. However, in some embodiments, the limiting and mating structure 81 may not be provided on the ingot 8, and the ingot 8 can be directly limited by other mechanisms with a specific structure, such as being limited by other mechanisms that match the shape of the ingot 8. In the following text, the ingot 8 is mainly used as an example to illustrate the structure and operation of the ingot processing system 1. It can be understood that all or part of the description is applicable to the ingot 8'.
[0069] Please refer to Figure 4 , the ingot processing system 1 includes a loading system 10, an orientation bonding system 20, and a cutting system 30. The loading system 10 is at least used to provide the ingot 8 with a sacrificial material 9 (for the sake of simplicity in description, it can be understood that the ingot 8 described hereinafter is the ingot 8 with a sacrificial material 9). After the ingot 8 moves from the loading system 10 to the orientation bonding system 20, the orientation bonding system 20 performs processing such as orientation and bonding on the ingot 8 fixed thereon. The cutting system 30 cuts the ingot 8 after the orientation, bonding, etc. processing to obtain wafers.
[0070] As an embodiment, the ingot processing system 1 may further include a system for chamfering and / or grinding the wafers.
[0071] It can be understood that the specific structures of the loading system 10 and the cutting system 30 are not limited. The loading system 10 only needs to be able to provide the ingot 8 at least. In the loading system 10, the ingot 8 can be moved to the orientation bonding system 20 manually or by a manipulator. The cutting system 30 only needs to be able to complete the cutting of the ingot 8.
[0072] As an embodiment, the orientation bonding system 20 includes an ingot fixing device 20a, an orientation measuring device 20b, and a bonding device 20c. The ingot fixing device 20a is at least used to fix the ingot 8 transported from the loading system 10. The orientation measuring device 20b is used to orient the ingot 8 fixed on the ingot fixing device 20a. The ingot fixing device 20a and the bonding device 20c cooperate to fix the ingot 8 with the sacrificial material 9 to the base.
[0073] It can be understood that the orientation measuring device 20b and the bonding device 20c can adopt any existing devices that can achieve the functions of orientation measurement and bonding.
[0074] As an embodiment, the orientation measuring device 20b utilizes the Bragg diffraction principle of X-rays to achieve the orientation of the crystal bar 8. Specifically, the orientation measuring device 20b can emit X-rays (detection light) to the crystal bar 8 through an emitting component, and then receive the X-rays diffracted back from the crystal bar 8 through a receiving component. After analysis by an analyzing component, the crystal orientation deviation angle and the crystal orientation deviation direction of the crystal bar 8 can be obtained.
[0075] As an embodiment, the bonding device 20c coats a liquid adhesive on the base, then moves the base with the liquid adhesive below the crystal bar 8 to contact the sacrificial material 9 below the crystal bar 8. After the adhesive cures, the bonding of the crystal bar 8 to the base is completed.
[0076] Please refer to Figures 5 to 7 , as an embodiment, the crystal bar fixing device 20a includes a carrier table 21. The carrier table 21 is plate-shaped and is provided with a hollow structure 213 for transmitting detection light, and the hollow structure 213 penetrates the carrier table 21. The carrier table 21 includes opposite first surface 21a and second surface 21b. There is a vacuum adsorption area 211 arranged around the hollow structure 213 on the first surface 21a, and the vacuum adsorption area 211 is used to adsorb the first end face 8a of the crystal bar 8.
[0077] When the first end face 8a of the crystal bar 8 is adsorbed on the vacuum adsorption area 211, a part of the first end face 8a of the crystal bar 8 is exposed at the hollow structure 213, so that the detection light emitted by the orientation measuring device 20b can be projected from the side of the second surface 21b of the carrier table 21, pass through the hollow structure 213 and shine on the first end face 8a of the crystal bar 8.
[0078] As an embodiment, the orientation measuring device 20b is arranged on one side of the second surface 21b of the carrier table 21, and the crystal bar fixing device 20a and the orientation measuring device 20b cooperate to provide an orientation function for the crystal bar 8.
[0079] As an embodiment, the vacuum adsorption area 211 is annular, which can form a relatively large vacuum adsorption space and can greatly enhance the adsorption fixing force.
[0080] As an embodiment, when the first end face 8a of the crystal bar 8 is adsorbed in the vacuum adsorption area 211, the hollow area corresponds to the central area of the first end face 8a.
[0081] It can be understood that a vacuum chamber 214 is provided in the vacuum adsorption area 211. The vacuum chamber 214 is connected to a vacuum generator (not shown in the figure) through a pipeline (not shown in the figure). The vacuum generator evacuates the air to adsorb the first end face 8a covering the vacuum chamber 214. As another embodiment, a plurality of vacuum holes are provided in the vacuum adsorption area 211. The vacuum holes are connected to the vacuum generator through a pipeline. The vacuum generator evacuates the air to adsorb the first end face 8a covering the vacuum holes. The vacuum space (such as the vacuum chamber 214, vacuum holes, etc.) is connected to the vacuum generator through a pipeline, changing the vacuum demand of the device into a standard CDA (compressed air) demand, changing the factory installation conditions, and improving the versatility of the system or device.
[0082] As an embodiment, a layer of soft material 212 is provided on the first surface 21a of the carrier table 21. The layer of soft material 212 covers the vacuum adsorption area 211, and the ingot 8 is in direct contact with the layer of soft material 212. The soft material 212 can be provided with holes and / or grooves according to the adsorption requirements. The provision of the layer of soft material 212 can not only protect the ingot 8 from being damaged, but also improve the strength of vacuum adsorption and reduce the size requirements for the adsorption surface of the ingot 8.
[0083] In the present invention, the ingot fixing device 20a can fix ingots 8 of different thicknesses by adsorbing and fixing a single end face of the ingot 8. After the ingot fixing device 20a completes the fixing of the ingot 8 through adsorption, it can assist the orientation measuring device 20b and the bonding device 20c to complete the orientation and bonding of the ingot 8. During orientation, since the detection light is projected onto the first end face 8a through the hollow structure 213, the first end face 8a serves both as an orientation measurement surface and an adsorption and fixing surface, eliminating the variables brought about by the differences in the surface morphologies of different ingots 8, and improving the orientation measurement accuracy of the system or device.
[0084] The ingot fixing device 20a cooperates with the orientation measuring device 20b and the bonding device 20c to achieve automatic orientation and bonding. Moreover, the ingots 8 are bonded one by one, and the crystal orientation of each ingot 8 can be adjusted individually. All the bonded ingots 8 can be reinspected, greatly improving the accuracy of ingot 8 bonding and greatly improving the crystal orientation accurate value of the wafer after cutting.
[0085] Please refer to Figures 8 to 10, as an embodiment, an avoidance groove 215 for making way for the detection light is formed on the second surface 21b of the carrier table 21. The depth of the avoidance groove 215 is less than the distance between the first surface 21a and the second surface 21b, that is, the avoidance groove 215 does not penetrate through the carrier table 21. One end of the avoidance groove 215 extends to the hollow structure 213, so that the detection light can pass through the avoidance groove 215 and enter the hollow structure 213 without being blocked by the carrier table 21. The setting of the avoidance groove 215 can reduce the size of the hollow structure 213 and increase the area of the vacuum adsorption area 211 on the premise of ensuring that the detection light can smoothly enter the hollow structure 213.
[0086] As Figure 10 shown, in some embodiments, the incident angle of the detection light L1 (i.e., the angle between L1 and the end face of the crystal bar 8) is relatively large, and it can directly pass through the hollow structure 213 and irradiate the crystal bar 8 without passing through the avoidance groove 215. In some other embodiments, the incident angle of the detection light L2 (i.e., the angle between L2 and the end face of the crystal bar 8) is relatively small. In the case where the size of the hollow structure 213 is relatively small, it will be blocked by the carrier table 21 and cannot enter the hollow structure 213. However, the design of the avoidance groove 215 enables the detection light not to be blocked by the carrier table 21 and can pass through the hollow structure 213 and irradiate the crystal bar 8. Thus, the crystal bar fixing device 20a can cooperate with the orientation measuring device 20b to provide orientation measurement for different types of crystal bars 8.
[0087] As an embodiment, the depth of the avoidance groove 215 gradually increases from the end far away from the hollow structure 213 to the end close to the hollow structure 213; thus, on the premise of ensuring the passage of the detection light, the good mechanical strength of the carrier table 21 can also be ensured.
[0088] It can be understood that the avoidance groove 215 can be in the shape of a triangular prism, a right trapezoidal prism, a rectangular prism, etc. The specific structural form is not limited as long as it can ensure the smooth passage of the detection light.
[0089] As an embodiment, there are multiple avoidance grooves 215, which are symmetrically arranged with the hollow structure 213 as the center to ensure the incidence and emission of the detection light.
[0090] As an embodiment, the size of the hollow structure 213 is 2 - 15 mm, the length of the avoidance groove 215 is 3 - 15°, and the depth is 0.2 - 3 mm. It can be understood that this size is only an embodiment, and the specific sizes of the hollow structure 213 and the avoidance groove 215 are not limited to the above parameters.
[0091] As an embodiment, the hollow structure 213 is rectangular, there are four avoidance grooves 215, and the avoidance grooves 215 are arranged at the rectangular corners of the hollow structure 213. The angle between two adjacent avoidance grooves 215 is 90°; the angle between the avoidance grooves 215 and the horizontal direction is 45°. In this way, the measurement requirements of the orientation measurement device 20b can be better met.
[0092] Please refer to Figure 11 , the ingot fixing device 20a includes a driving mechanism (not shown in the figure). The driving mechanism can drive the carrier table 21 to rotate around point O to different positions, so as to facilitate the loading of the ingot 8 and / or adjust the crystal orientation deviation of the ingot 8 and / or facilitate the bonding of the ingot 8. The rotation direction of the carrier table 21 is perpendicular to the carrier table 21.
[0093] As an embodiment, the driving mechanism drives the carrier table 21 to move to the first position (position A). At this time, the carrier table 21 extends in the horizontal direction, which is convenient for the operator or the manipulator to place the ingot 8 in the vacuum adsorption area 211.
[0094] As an embodiment, the driving mechanism drives the carrier table 21 to move to the second position (position B). At this time, the carrier table 21 extends in the vertical direction, which is convenient for the orientation measurement device 20b to perform orientation measurement on the ingot 8.
[0095] As an embodiment, after the orientation measurement device measures the crystal orientation deviation angle and the crystal orientation deviation direction of the ingot 8, the driving mechanism drives the carrier table 21 located at position B to rotate (the rotation angle is determined according to the size of the crystal orientation deviation angle, generally within 5°), the rotation angle is equal to the crystal orientation deviation angle, and the rotation direction is opposite to the crystal orientation deviation direction. That is, through rotation, the wafer deflection angle compensation and alignment function of the ingot 8 in the Y-axis direction is realized. After the adjustment of the crystal orientation deviation is completed, the bonding device 20c can move to the lower part of the ingot 8 to bond the ingot 8.
[0096] Please continue to refer to Figure 6 、 Figure 7 , as an embodiment, the ingot fixing device 20a further includes a limiting mechanism 22. The limiting mechanism 22 is arranged outside the vacuum adsorption area 211. The limiting mechanism 22 cooperates with the limiting structure 81 on the ingot 8 to limit the position of the ingot 8.
[0097] As an embodiment, the limiting mechanism 22 is fixed on the carrier table 21.
[0098] As an embodiment, the ingot 8 is Figure 2The shown ingot 8, and the corresponding limiting mechanism 22 includes an elastic ejector pin 220, a first roller 221 and a second roller 222. The first roller 221 and the second roller 222 are located on opposite sides of the elastic ejector pin 220. It can be understood that the elastic ejector pin 220 is a component that can be telescopic under force. The positions of the first roller 221 and the second roller 222 are relatively fixed. During loading, the operator or the manipulator pushes the ingot 8 towards the vacuum adsorption area 211, and makes the elastic ejector pin 220 abut against the notch 811a. The elastic ejector pin 220 is telescopic. When continuing to push the ingot 8, the elastic ejector pin 220 retracts, and the ingot 8 will abut against the first roller 221 and the second roller 222, and the position of the ingot 8 is limited. At this time, the vacuum generator can be started, and the first end face 8a of the ingot 8 is adsorbed in the vacuum adsorption area 211. It can be understood that it is the cooperation of the elastic ejector pin 220, the first roller 221 and the second roller 222 that limit the ingot 8, so that the position of the ingot 8 stays in the vacuum adsorption area 211, which is convenient for vacuum adsorption and fixing of the ingot 8. When the ingot 8 is fixed, the elastic ejector pin 220 abuts against the notch 811a, and the first roller 221 and the second roller 222 are in contact with the side face 8c of the ingot 8. After the ingot 8 is fixed, the carrier 21 can be rotated.
[0099] As an embodiment, at the second position, the elastic ejector pin 220, the first roller 221 and the second roller 222 are located on the upper side of the ingot 8, and the elastic ejector pin 220 is located at the top of the ingot 8, which is convenient for reserving a position for the sacrificial material 9 below the ingot 8 and / or convenient for bonding.
[0100] It can be understood that during bonding, when an indeterminate moment acts below, the first roller 221 and the second roller 222 bear the lateral force to prevent the ingot 8 from translating.
[0101] Please refer to Figure 12 As an embodiment, the limiting mechanism 22 includes a top limiting block 241 and a side limiting block 243, which are applicable to provide limitation for the Figure 3 shown ingot 8'. Specifically, during loading, the operator or the manipulator pushes the ingot 8' towards the vacuum adsorption area 211, and makes the first flat edge 812a abut against the top limiting block 241 and the second flat edge 812b abut against the side limiting block 243, and the position of the ingot 8 is limited. At this time, the vacuum generator can be started, and the first end face 8a of the ingot 8 is adsorbed in the vacuum adsorption area 211. It can be understood that it is the cooperation of the top limiting block 241 and the side limiting block 243 that limit the ingot 8, so that the position of the ingot 8 stays in the vacuum adsorption area 211, which is convenient for vacuum adsorption and fixing of the ingot 8. When the ingot 8 is fixed, the carrier 21 can be rotated.
[0102] As an embodiment, at the second position, the top stopper 241 is located at the top of the crystal ingot 8, and the side stopper 243 is located at the left and / or right side of the crystal ingot 8. The top stopper 241 and the side stopper 243 are located at the top and side of the crystal ingot 8, which is convenient for reserving a position for accommodating the sacrificial material 9 under the crystal ingot 8 and / or for facilitating bonding.
[0103] As an embodiment, there is one side limit block 243, such as a side limit block 243 arranged on the left side, or a side limit block 243 arranged on the right side.
[0104] As an embodiment, there are two side limit blocks 243, that is, one on each side. In a single crystal ingot 8 limiting process, the side limit blocks 243 on one side or both sides limit the crystal ingot 8. The number of side limit blocks 243 can also be only one on the left or right side.
[0105] It can be understood that the top stop block 241 and / or the side stop block 243 are fixed or movable. In the case of being movable, the crystal rod 8 can be pushed to a suitable position.
[0106] As an embodiment, the position where the limiting mechanism 22 contacts the crystal rod 8 is at least partially made of non-metallic material. In some embodiments, the first roller 221 and the second roller 222 are circular rollers made of non-metallic material to protect the crystal rod 8 from damage during limiting, fixing and operation.
[0107] As an embodiment, the structure of the limiting mechanism 22 is not limited, as long as it can complete the limiting of the crystal rod 8 before the crystal rod 8 is adsorbed and fixed. For example, the limiting of the crystal rod 8 can be achieved by setting the structure of the vacuum adsorption area 211.
[0108] As an embodiment, the limiting mechanism 22 may be omitted, and the limiting of the crystal rod 8 may be completed manually or in other ways.
[0109] See also Figure 7 , Figure 12 and Figure 13 As an embodiment, a sacrificial material 9 accommodating space is provided between the support platform 21 and the limiting mechanism 22 and / or under the crystal rod fixing device 20a. When the crystal rod 8 is fixed, the sacrificial material 9 is located in the sacrificial material 9 accommodating space.
[0110] As an embodiment, the area corresponding to the accommodating space of the sacrificial material 9 is staggered with the area where the vacuum adsorption area is located to avoid affecting the bonding.
[0111] As an embodiment, when the carrier 21 extends in the vertical direction, the lowermost end of the vacuum adsorption area 211 or the lowermost end of the carrier 21 is higher than the lowermost end of the ingot 8, that is, at least part of the ingot 8 is located below the lowermost end of the vacuum adsorption area 211 or the lowermost end of the carrier 21. Such a design can reserve a accommodation space for the sacrificial material 9.
[0112] The present invention also provides a method for processing an ingot. The ingot processing system 1 (the component numbers in the foregoing embodiments are used in this embodiment) includes the ingot fixing device 20a, the orientation measuring device 20b, and the bonding device 20c as described above. In some embodiments, the method for processing an ingot includes the steps of:
[0113] Loading: The driving mechanism drives the carrier 21 to move to the first position, and the carrier 21 extends in the horizontal direction to facilitate placing the ingot 8 on the vacuum adsorption area 211.
[0114] Vacuum adsorption: The ingot 8 is fixed to the vacuum adsorption area 211 by vacuum adsorption.
[0115] Moving the carrier 21: The driving mechanism drives the carrier 21 to move to the second position, and the carrier 21 extends in the vertical direction.
[0116] Orientation: The detection light emitted by the orientation measuring device 20b passes through the hollow structure 213 and irradiates on the first end face 8a of the ingot 8, and the diffracted detection light is analyzed to obtain the crystal orientation deviation angle and the crystal orientation deviation direction of the ingot 8.
[0117] In some embodiments, after the loading step, the method further includes the steps of:
[0118] Limiting: The limiting mechanism 22 acts to limit the position of the ingot 8.
[0119] After the orientation step, the method further includes the steps of:
[0120] Adjusting the crystal orientation deviation: The driving mechanism drives the carrier 21 to rotate, the rotation angle is equal to the crystal orientation deviation angle, and the rotation direction is opposite to the crystal orientation deviation direction.
[0121] Bonding: The bonding device moves the base coated with adhesive to below the ingot 8 and contacts the sacrificial material 9 at the bottom of the ingot 8.
[0122] Unloading: After the adhesive is cured, the vacuum adsorption on the ingot 8 is released.
[0123] As an embodiment, at the second position, at least a part of the bottom of the first end face 8a of the ingot 8 is exposed outside the first surface 21a of the carrier 21.
[0124] More specifically, after confirming that the system initialization is completed and entering the waiting-for-loading state, through the screen or buttons of the control system, input the loading preparation operation. The carrier 21 swings to the horizontal position. The ingot 8 is placed on the preset station manually or by a manipulator. Then input the loading completion instruction. The system performs vacuum adsorption and detects the vacuum degree formed between the ingot 8 and the adsorption space. When the vacuum degree reaches the preset value, the carrier 21 swings to adjust the ingot 8 to the vertical direction position. The ingot fixing device 20a cooperates with other mechanisms such as the orientation measuring device 20b and the bonding device 20c to complete the orientation measurement and bonding processes. After the orientation measurement process is completed, under the control of the control system, the carrier 21 swings and has the function of compensating the wafer angle in the Y-axis direction. During the orientation measurement and bonding processes, the vacuum degree of the equipment is monitored in real time. Once fluctuations occur, an alarm is given immediately and the protection program is entered. When the bonding process is completed and enters the unloading process, the vacuum generator has the function of breaking the vacuum to separate the ingot 8 from the carrier 21 and enter the next process for cyclic operation.
[0125] It can be understood that in the foregoing embodiments, the descriptions of the ingot processing system are all applicable to the method embodiments.
[0126] Those skilled in the art can understand that on the premise of no conflict, the above preferred solutions can be freely combined and superimposed.
[0127] It should be understood that the above embodiments are merely exemplary and not restrictive. Without departing from the basic principles of the present invention, various obvious or equivalent modifications or substitutions made by those skilled in the art to the above details will all be included within the scope of the claims of the present invention.
Claims
1. A method for processing a crystal ingot, wherein the method is implemented by a crystal ingot processing system, wherein the crystal ingot processing system comprises a crystal ingot fixing device and an orientation measuring device, wherein the crystal ingot comprises a side surface and a first end surface and a second end surface opposite to each other, and wherein: The crystal rod fixing device comprises: A carrier platform, the carrier platform is in the shape of a plate, and is provided with a hollow structure for transmitting detection light, and the hollow structure runs through the carrier platform; the carrier platform comprises a first surface and a second surface opposite to each other, and a vacuum adsorption area is provided on the first surface around the hollow structure, and the vacuum adsorption area is used to adsorb the first end face of the crystal rod; When the first end face of the crystal rod is adsorbed on the vacuum adsorption area, part of the first end face of the crystal rod is exposed to the hollow structure, so that the detection light projected from the second surface side of the carrier table passes through the hollow structure and is projected onto the first end face; A limited position matching structure is provided on the crystal rod; the crystal rod fixing device further comprises a limit mechanism, the limit mechanism is provided outside the vacuum adsorption area, and the limit mechanism cooperates with the limit matching structure on the crystal rod to limit the position of the crystal rod; A driving mechanism, wherein the driving mechanism can drive the supporting platform to rotate to different positions; The crystal rod processing method comprises the steps of: Loading; the driving mechanism drives the carrying platform to move to a first position, and the carrying platform extends in a horizontal direction so as to place the crystal rod in the vacuum adsorption area; Limiting; the limiting mechanism is actuated to limit the position of the crystal rod; Vacuum adsorption: fixing the crystal rod in the vacuum adsorption area by vacuum adsorption; Moving the carrying platform; the driving mechanism drives the carrying platform to move to a second position, and the carrying platform extends in a vertical direction; Orientation; the detection light emitted by the orientation measurement device is projected onto the first end face of the crystal rod through the hollow structure, and the diffracted detection light is analyzed to obtain the crystal orientation deviation angle and crystal orientation deviation direction of the crystal rod; Adjusting the crystal orientation deviation; the driving mechanism drives the supporting platform to rotate, the rotation angle is equal to the crystal orientation deviation angle, and the rotation direction is opposite to the crystal orientation deviation direction.
2. The method for processing a crystal rod according to claim 1, characterized in that: The crystal rod fixing device also includes a bonding device; After the step of adjusting the crystal orientation deviation, the method further comprises the steps of: Bonding; the bonding device moves the base coated with adhesive to the bottom of the crystal rod and contacts the sacrificial material at the bottom of the crystal rod; After the adhesive is solidified, the vacuum adsorption of the crystal rod is released.
3. The method for processing a crystal rod according to claim 1, characterized in that: A relief groove for making way for the detection light is provided on the second surface of the carrier, the depth of the relief groove is less than the distance between the first surface and the second surface, and one end of the relief groove extends to the hollow structure; The depth of the avoidance groove gradually increases from an end away from the hollow structure to an end close to the hollow structure; There are multiple avoidance grooves, which are symmetrically arranged with the hollow structure as the center.
4. The method for processing a crystal rod according to claim 1, characterized in that: The limiting matching structure provided on the crystal rod is a notch, and the notch is provided on the side surface; The limiting mechanism comprises an elastic ejector pin, a first roller and a second roller, wherein the first roller and the second roller are located on opposite sides of the elastic ejector pin. When the crystal rod is fixed, the elastic ejector pin abuts against the notch, the first roller and the second roller contact the side surface of the crystal rod, and the elastic ejector pin cooperates with the first roller and the second roller to limit the position of the crystal rod. When the supporting platform extends in a vertical direction, the elastic ejector pin, the first roller and the second roller are located on the upper side of the crystal rod, and the elastic ejector pin is located on the top of the crystal rod.
5. The method for processing a crystal rod according to claim 1, characterized in that: The limiting matching structure arranged on the crystal rod is a first flat edge and a second flat edge perpendicular to each other, and the first flat edge and the second flat edge are arranged on the side surface; The limiting mechanism comprises a top limiting block and a side limiting block. When the crystal ingot is fixed, the first flat edge abuts against the top limiting block, and the second flat edge abuts against the side limiting block. The top limiting block and the side limiting block cooperate to limit the position of the crystal ingot. When the supporting platform extends in the vertical direction, the top limiting block is located at the top of the crystal rod; There is one side limit block, or two side limit blocks are arranged on opposite sides of the crystal rod.
6. The method for processing a crystal rod according to claim 1, characterized in that: The crystal rod is fixed on the sacrificial material; A sacrificial material accommodating space is provided between the carrying platform and the limiting mechanism and / or below the crystal rod fixing device, and when the crystal rod is fixed, the sacrificial material is located in the sacrificial material accommodating space; The area corresponding to the sacrificial material accommodating space is staggered with the area where the vacuum adsorption space is located.
7. The method for processing a crystal rod according to any one of claims 1 to 6, characterized in that: The rotation direction of the supporting platform is perpendicular to the supporting platform.
8. The method for processing a crystal rod according to any one of claims 1 to 6, characterized in that: The limiting mechanism is fixed on the carrying platform; A soft material layer is disposed on the first surface of the carrying platform, and the soft material layer covers the vacuum adsorption area.
9. The method for processing a crystal rod according to any one of claims 1 to 6, characterized in that: The orientation measurement device is arranged on one side of the second surface of the supporting platform.
Citation Information
Patent Citations
Bearing device and detection equipment
CN216120251U