Ion beam electric deflector internal insulation structure and withstand voltage test method thereof

Abstract

The invention relates to an ion beam electric deflector internal insulation structure and a withstand voltage test method thereof, the insulation structure comprises a cuboid main board, a Y-shaped support column and a connecting bolt, the cuboid main board is made of a polyether-ether-ketone material, and the length, width and thickness of the cuboid main board both need to meet the insulation requirement between the Y-shaped support column and an electrode plate; the blind holes are used for fixing the cuboid main board and an internal electrode plate of the electric deflector, and the counter bores are used for fixing the cuboid main board on the Y-shaped supporting columns; the connecting bolts are divided into two types, metal hexagon socket head cap bolts penetrate through the blind holes to fix the cuboid main plate and the ground potential electrode plates on the two sides, and PEEK hexagon socket head cap bolts penetrate through the counterbores and part of the blind holes to connect the cuboid main plate with the middle high potential electrode plate and the Y-shaped supporting column. According to the invention, the insulation requirement design between two metals, namely the supporting column and the electrode plate in the ion beam electric deflector and the measurement of the withstand voltage value of the insulation structure are realized.

Description

Technical Field

[0001] The invention is applied to the field of insulation safety protection, and in particular relates to an internal insulation structure of an ion beam electric deflector and a withstand voltage test method thereof. Background Art

[0002] In a neutral beam injector, the high-energy ion beam generated by the beam source passes through the neutralizer, and the main component of the beam is a mixed beam of high-energy neutral particles and high-energy charged particles. The ion components are called residual ions. In order to pass through the strong magnetic field of the magnetic confinement fusion experimental device, the charged particles in the beam must be completely stripped off to obtain a neutral beam. The electric deflector is a device used to strip off the residual ions in the beam and is one of the key components of the neutral beam injector. The design of the electric deflector must focus on the insulation requirements between the electrode and the support body, and different structures of insulation components must be designed according to the different structures of the connection.

[0003] The electric deflector is a key component of the negative ion source neutral beam injector for stripping off the remaining charged particles to achieve beam neutralization. Its working performance plays a vital role in the steady-state operation of the negative ion source neutral beam injector and the fusion reactor device. In the prior art, there is no insulating plate used between the special Y-shaped support and the electrode plate, and local defects, moisture and aging of the insulating plate cannot be detected. There is no voltage withstand test method for the insulating plate of the electric deflector. Summary of the invention

[0004] In order to solve the above technical problems, the present invention proposes an internal insulation structure of an ion beam electric deflector and a withstand voltage test method thereof.

[0005] To achieve the above-mentioned purpose, the present invention adopts the following technical scheme: an internal insulation structure of an ion beam electric deflector, the insulation structure includes a rectangular main board, a Y-shaped support column and connecting bolts, the rectangular main board has a plurality of blind holes and countersunk holes, the rectangular main board is made of polyetheretherketone material, and its length, width and thickness must meet the insulation requirements between the Y-shaped support column and the electrode plate of the internal base of the electric deflector; the blind holes are used to fix the rectangular main board to the internal electrode plate of the electric deflector, and the countersunk holes are used to fix the rectangular main board to the Y-shaped support column; there are two types of connecting bolts, metal bolts and PEEK bolts; some blind holes are connected to the ground potential electrode plate with metal bolts, and the countersunk holes are used to fix the rectangular main board to the Y-shaped support column, and the other part of the blind holes are connected to the high potential electrode plate with PEEK bolts.

[0006] A method for withstand voltage testing of the internal insulation structure of the ion beam electric deflector as described above comprises the following steps:

[0007] Fix the rectangular main board between the Y-shaped support column and the electrode plate;

[0008] A manually adjustable voltage source is used as a voltage generating terminal to generate a high voltage of 0 to 300 kV;

[0009] Take a microampere ammeter as a current test tool and connect it to the voltage source with a power cord;

[0010] Take the power line and connect the other end of the voltage source to the metal water pipe extending from the high potential electrode in the middle of the electric deflector. After the high potential is connected, connect the other end of the voltage source to the peripheral ground potential to form a loop.

[0011] After the entire test device is debugged and installed, manually adjust the set voltage value, set the initial voltage at 2kv, and record a set of data every 0.1kv increase from 0.1kv until the breakdown protection phenomenon occurs and stop the experiment. The highest value obtained on the microampere ammeter is the withstand voltage value of the rectangular motherboard.

[0012] The present invention has the following beneficial effects:

[0013] The present invention designs an insulating rectangular main board that is suitable for the special Y-shaped support column in the electric deflector. Two bolts made of different materials are designed according to different potential requirements, so that 2 cm of insulation protection is formed between the support column and the electrode, and the withstand voltage value of the rectangular main board can be known, thereby enhancing safety.

[0014] Considering that with the increasing maturity of magnetic confinement nuclear fusion research, the size of fusion reactor devices is getting larger and larger, and the plasma parameters are getting higher and higher, the structure of the existing electric deflector rectangular mainboard is difficult to meet the high insulation requirements of the special structure of the future negative ion source neutral beam injector. The present invention proposes an internal insulation structure of an ion beam electric deflector and a withstand voltage test scheme thereof, which can be used to meet the high insulation requirements of special Y-shaped pillars. Compared with traditional insulation boards, it has stronger adaptability, and its specific withstand voltage value can be measured, and its safety performance is improved.

[0015] The blind hole designed by the present invention is a hole without a through hole on the surface of the rectangular main board, and its bottom is buried under the surface of the rectangular main board. The main advantage of the blind hole is that it can reduce the number of through holes on the rectangular main board, thereby improving its withstand voltage value. In addition, the blind hole can also improve the electrical performance of the rectangular main board because it can provide a better current flow path.

[0016] The countersunk hole designed in the present invention can avoid the protrusion of the screw and ensure the flatness of the installation plane. The rectangular main board is fixed on the Y-shaped support by two PEEK bolts through the countersunk hole to increase the uniformity of the overall structure and better protect the core components in the electric deflector from being damaged by high voltage.

[0017] Compared with the traditional method of dismantling individual components and then conducting a withstand voltage test, the testing method of this scheme avoids the tedious disassembly and assembly work and can directly measure the withstand voltage value by using the principle of forming a closed loop between high and ground potentials.

[0018] In addition to taking into account the insulation performance of the traditional rectangular mainboard, the present invention increases adaptability and can obtain its specific withstand voltage value through testing. When in use, its safety threshold range can be known in advance, thereby increasing safety. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic diagram of the Y-shaped support column structure inside the electric deflector;

[0020] Figure 2 It is a schematic diagram of the structure of a rectangular main board;

[0021] Figure 3 This is a schematic diagram of the fixation of the rectangular main board and the Y-shaped support column;

[0022] Figure 4 This is the dimension drawing of the rectangular main board;

[0023] Among them, 1. rectangular main board, 2. countersunk hole, 3. blind hole, 4. connecting bolt, 5. Y-shaped support column. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical scheme and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other. To achieve the above-mentioned purpose, the present invention adopts the following technical scheme.

[0025] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0026] Embodiment 1:

[0027] Figure 1 The figure shows a schematic diagram of the structure of the Y-shaped support column 5 inside the electric deflector. The insulating structure is composed of a rectangular main board 1, a Y-shaped support column 5 and a connecting bolt 4. The rectangular main board 1 is provided with a countersunk hole 2 and a blind hole 3, as shown in FIG. Figure 2 The rectangular main board 1 is fixed with connecting bolts 4 and Y-shaped support columns 5, as shown in FIG. Figure 3As shown, the six blind holes 3 on one side of the rectangular main board 1 are connected to the ground potential electrode plate with metal bolts, the two countersunk holes 2 in the middle are used to fix the rectangular main board 1 on the Y-shaped support column 5, and the six blind holes 3 on the other side are connected to the high potential electrode plate with PEEK bolts. The thickness of the rectangular main board 1 is 2 cm, which can form a partition between the Y-shaped support column 5 and the electrode plate, such as Figure 4 shown.

[0028] There are two types of connecting bolts 4, metal bolts and PEEK bolts; some blind holes 3 are connected to the ground potential electrode plate with metal bolts, the countersunk holes 2 are used to fix the rectangular main board 1 on the Y-shaped support column 5, and the other part of the blind holes 3 are connected to the rectangular main board 1 with the high potential electrode plate with PEEK bolts.

[0029] The rectangular main board 1 has a length of 24 cm, a width of 12 cm, a thickness of 2 cm, and has corners with a radius of 0.3 cm on all sides.

[0030] The number of the blind holes 3 is 12, with the countersunk hole 2 as the symmetry center, symmetrically distributed on both sides of the rectangular main board 1, 6 on each side, the diameter of the blind hole 3 is 0.8 cm and the thread depth is 1 cm.

[0031] The number of the countersunk holes is 2, the diameter is 0.9 cm, the diameter of the countersunk is 1.5 cm, and the depth of the countersunk is 0.9 cm.

[0032] The metal bolts are metal hexagon socket head bolts; the six blind holes 3 on one side of the rectangular main board 1 are connected to the ground potential electrode plate with metal hexagon socket head bolts, and the two countersunk holes 2 in the middle are used to fix the rectangular main board 1 on the Y-shaped support column 5. The PEEK bolts are PEEK hexagon socket head bolts, and the six blind holes 3 on the other side are connected to the high potential electrode plate with PEEK hexagon socket head bolts.

[0033] A PEEK gasket is provided between the metal bolt and the blind hole 2 and the countersunk hole 1 .

[0034] The present invention further proposes an internal insulation structure of an ion beam electric deflector and a withstand voltage test method thereof, wherein the withstand voltage test method is as follows:

[0035] Take a Y-shaped support column 5 and fix the rectangular main board 1 between it and the electrode plate.

[0036] Check whether there are other impurities or metals at the connection of the rectangular main board 1, place the experimental instrument at a safe distance of 2 to 3 meters from the electric deflector and check whether the instrument can operate normally.

[0037] A manually adjustable voltage source is used as the voltage generating end, which can generate a high voltage of 0 to 300 kV.

[0038] Take a microampere ammeter as a tool for measuring the withstand voltage and connect the microampere ammeter to a voltage source.

[0039] Take the power line and connect the other end of the voltage source to the metal water pipe extending from the high potential electrode in the middle of the electric deflector. After connecting the high potential, connect the other end of the voltage source to the peripheral ground potential to form a loop.

[0040] After connecting the instruments, set the initial voltage at 2kv, and record a set of data every time the voltage increases by 0.1kv from 0.1kv until the breakdown protection phenomenon occurs and stop the experiment. The highest value obtained on the ammeter is the withstand voltage value of the rectangular mainboard 1.

[0041] In order to reduce experimental errors, the experiment was repeated 2 to 3 times and the final results were averaged.

[0042] The high potential connection method is to select a copper power line with metal clips at both ends, one end is clamped on the output end of the voltage source, and the other end is clamped on a metal water pipe at the same potential as the high potential electrode plate.

[0043] The withstand voltage test method is specifically as follows: the ammeter is connected to the voltage source and then to the high potential of the electric deflector. As the voltage value increases, creepage will occur between the high potential and the ground potential, and the rectangular main board 1 is located between the high potential and the ground potential. When the voltage value increases to a range that the rectangular main board 1 cannot bear, the device will automatically cut off the power and prompt overvoltage protection, and finally the withstand voltage value of the rectangular main board 1 is obtained.

[0044] A special current limiting resistor is installed between the voltage source and the high potential of the rectangular main board 1. The special current limiting resistor is used to protect the instrument during electrical breakdown, and the discharge rod is used to release the residual current on the instrument after the experiment.

[0045] Although the above describes the illustrative specific embodiments of the present invention to facilitate those skilled in the art to understand the present invention, and it should be clear that the present invention is not limited to the scope of the specific embodiments, for those of ordinary skill in the art, as long as various changes are within the spirit and scope of the present invention as defined and determined by the attached claims, these changes are obvious, and all inventions and creations using the concept of the present invention are protected.

Claims

1. An internal insulation structure of an ion beam electric deflector, characterized in that: The insulating structure includes a rectangular main board, a Y-shaped support column and connecting bolts. The rectangular main board is provided with a plurality of blind holes and countersunk holes. The rectangular main board is made of polyetheretherketone material, and its length, width and thickness must meet the insulation requirements between the Y-shaped support column and the electrode plate of the internal base of the electric deflector; the blind holes are used to fix the rectangular main board to the internal electrode plate of the electric deflector, and the countersunk holes are used to fix the rectangular main board to the Y-shaped support column; there are two types of connecting bolts, metal bolts and PEEK bolts; some blind holes are connected to the ground potential electrode plate with metal bolts, and the countersunk holes are used to fix the rectangular main board to the Y-shaped support column, and the other part of the blind holes are connected to the high potential electrode plate with PEEK bolts.

2. The internal insulation structure of the ion beam electric deflector according to claim 1, characterized in that: The length of the rectangular main board is 24 cm, the width is 12 cm, the thickness is 2 cm, and there are corners with a radius of 0.3 cm on all sides.

3. The internal insulation structure of the ion beam electric deflector according to claim 1, characterized in that: There are 12 blind holes, symmetrically distributed on both sides of the rectangular main board, 6 on each side, with the countersunk hole as the symmetry center. The diameter of the blind hole is 0.8 cm and the thread depth is 1 cm.

4. The internal insulation structure of the ion beam electric deflector according to claim 1, characterized in that: The number of the countersunk holes is 2, the diameter is 0.9 cm, the diameter of the countersunk is 1.5 cm, and the depth of the countersunk is 0.9 cm.

5. The internal insulation structure of the ion beam electric deflector according to claim 1 or 2, characterized in that: The metal bolts are metal hexagon socket head bolts; the six blind holes on one side of the rectangular main board are connected to the ground potential electrode plate with metal hexagon socket head bolts, the two countersunk holes in the middle are used to fix the rectangular main board on the Y-shaped support column, the PEEK bolts are PEEK hexagon socket head bolts, and the six blind holes on the other side are connected to the high potential electrode plate with PEEK hexagon socket head bolts.

6. The internal insulation structure of the ion beam electric deflector according to claim 1, 2 or 5, characterized in that: A PEEK gasket is provided between the bolt and the blind hole and the countersunk hole.

7. A method for withstand voltage testing of the internal insulation structure of an ion beam electric deflector according to any one of claims 1 to 6, characterized in that: The following steps are involved: Fix the rectangular main board between the Y-shaped support column and the electrode plate; A manually adjustable voltage source is used as a voltage generating terminal to generate a high voltage of 0 to 300 kV; Take a microampere ammeter as a current test tool and connect it to the voltage source with a power cord; Take the power line and connect the other end of the voltage source to the metal water pipe extending from the high potential electrode in the middle of the electric deflector. After the high potential is connected, connect the other end of the voltage source to the peripheral ground potential to form a loop. After the entire test device is debugged and installed, manually adjust the set voltage value, set the initial voltage at 2kv, and record a set of data every 0.1kv increase from 0.1kv until the breakdown protection phenomenon occurs and stop the experiment. The highest value obtained on the microampere ammeter is the withstand voltage value of the rectangular motherboard.

8. The withstand voltage test method for the internal insulation structure of an ion beam electric deflector according to claim 7, characterized in that: The high potential connection method is to select a copper power line with metal clips at both ends, one end is clamped on the output end of the voltage source, and the other end is clamped on a metal water pipe at the same potential as the high potential electrode plate.

9. The withstand voltage test method for the internal insulation structure of an ion beam electric deflector according to claim 7, characterized in that: The voltage withstand test method is specifically as follows: the ammeter is connected to the voltage source and then to the high potential of the electric deflector. As the voltage value increases, creepage will occur between the high potential and the ground potential, and the rectangular mainboard is located between the high potential and the ground potential. When the voltage value increases to a range that the rectangular mainboard cannot bear, the device will automatically cut off the power and prompt overvoltage protection, and finally the voltage withstand value of the rectangular mainboard is obtained.

10. The withstand voltage test method for the internal insulation structure of an ion beam electric deflector according to claim 7, characterized in that: A special current-limiting resistor and a discharge rod are installed between the voltage source and the high potential of the rectangular mainboard; the current-limiting resistor is used to protect the instrument in case of electrical breakdown, and the discharge rod is used to release the residual current on the instrument after the experiment.

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