Storage unit reliability detection method and device and computer readable storage medium

Abstract

The invention discloses a storage unit reliability detection method and device and a computer readable storage medium, and relates to the technical field of data processing.The storage unit reliability detection method comprises the steps that a series of reading voltages are applied based on the working voltage range of a storage unit, the performance of the storage unit is known more comprehensively, and the reliability of the storage unit is improved. According to the method, the corresponding original bit error rate is recorded by reading data under each voltage, the data reading accuracy of the storage unit under different voltages is evaluated, and the reading voltage enabling the original bit error rate to be equal to the preset threshold value can be found by comparing the original bit error rate with the preset threshold value; the boundary of the effective window of the storage unit is defined, the length of the effective window is calculated through the boundary of the effective window, the reliability of the storage unit is further quantified, and the reliability detection accuracy of the storage unit is improved.

Description

Technical Field

[0001] The present application relates to the field of data processing technology, and in particular to a storage unit reliability detection method, device and computer-readable storage medium. Background Art

[0002] The traditional method of measuring Flash storage reliability is to use the raw bit error rate, which reflects the probability of data read errors in the storage unit. However, the raw bit error rate has a significant disadvantage. It changes with the read voltage. If the read voltage is set too high, some data units that should have been read correctly will be misjudged as errors. If the read voltage is set too low, the charge in the storage unit may not be fully stimulated, causing some units that actually store data to be misjudged as empty or not storing data, which will increase the number of read errors and ultimately lead to low accuracy in storage unit reliability detection.

[0003] The above contents are only used to assist in understanding the technical solution of the present application and do not constitute an admission that the above contents are prior art. Summary of the invention

[0004] The main purpose of the present application is to provide a storage unit reliability detection method, device and computer-readable storage medium, aiming to solve the technical problem of how to improve the accuracy of storage unit reliability detection.

[0005] To achieve the above object, the present application proposes a storage unit reliability detection method, which includes: applying a read voltage to the memory cell according to a read voltage sequence; Recording the raw bit error rate of the data in the memory cell when each read voltage is applied; Determine a read voltage corresponding to a raw bit error rate equal to a preset threshold as a valid window boundary; According to the effective window boundary, determine the length of the effective window; The detection result of the storage unit is determined according to the length of the effective window, and the detection result is used to characterize the reliability of the storage unit when storing data.

[0006] In one embodiment, when each read voltage is applied, the step of recording the original bit error rate of the data in the memory cell comprises: Reading data in the storage unit by applying a read voltage, and determining a read result corresponding to each read voltage; Parse the read results to determine the raw bit error rate corresponding to the read voltage, and record the raw bit error rate.

[0007] In one embodiment, the steps of analyzing the read result to determine the original bit error rate corresponding to the read voltage and recording the original bit error rate include: Parsing the read result of each read voltage to determine the total number of data bits and the number of error bits of the read result; Calculate the raw bit error rate based on the ratio of the number of error bits to the total number of data bits; Each read voltage is associated with the corresponding raw bit error rate and recorded.

[0008] In one embodiment, the step of determining a read voltage corresponding to an original bit error rate equal to a preset threshold as a valid window boundary includes: comparing the raw bit error rate recorded at each read voltage with a preset threshold; The read voltage corresponding to when the original bit error rate is equal to the preset threshold for the first time is used as the lower boundary of the valid window; The read voltage corresponding to when the original bit error rate is equal to the preset threshold again after the read voltage is increased is used as the upper boundary of the valid window.

[0009] In one embodiment, the step of using the read voltage corresponding to when the original bit error rate is equal to the preset threshold for the first time as the lower boundary of the valid window further includes: If the raw bit error rate equal to the preset threshold value does not appear, then checking the trend of the recorded raw bit error rate with the change of the read voltage; Identify all downward trend change points of the raw bit error rate from being higher than a preset threshold to being lower than a preset threshold; The absolute value of the difference between the downward trend change point and the preset threshold is calculated, and the read voltage corresponding to the original bit error rate with the smallest absolute value is used as the lower boundary of the effective window.

[0010] In one embodiment, the step of increasing the read voltage and taking the read voltage corresponding to when the original bit error rate is equal to the preset threshold again as the upper boundary of the valid window after the read voltage is increased also includes: If the raw bit error rate equal to the preset threshold value does not appear, then checking the trend of the recorded raw bit error rate with the change of the read voltage; Identify all rising trend change points of the raw bit error rate from below a preset threshold to above a preset threshold; The absolute value of the difference between the rising trend change point and the preset threshold is calculated, and the read voltage corresponding to the original bit error rate with the smallest absolute value is used as the upper boundary of the valid window.

[0011] In one embodiment, the step of determining the detection result of the storage unit according to the length of the valid window, wherein the detection result is used to characterize the reliability of the storage unit when storing data includes: When the length of the valid window is less than or equal to a preset length threshold, determining the detection result as the first stored data; When the length of the effective window is greater than a preset length threshold, it is determined that the detection result is the second stored data, and the reliability of the second stored data is higher than that of the first stored data.

[0012] In one embodiment, before the step of applying a read voltage to a memory cell according to a read voltage sequence, the step includes: Perform voltage testing on the storage unit to determine the actual operating voltage range of the storage unit; According to the accuracy requirements of the storage unit, the voltage interval in the read voltage sequence is set; Determine the voltage reading sequence based on the operating voltage range and voltage interval.

[0013] In addition, to achieve the above-mentioned purpose, the present application also proposes a storage unit reliability detection device, the device comprising: a memory, a processor, and a computer program stored in the memory and executable on the processor, the computer program being configured to implement the steps of the storage unit reliability detection method as described above.

[0014] In addition, to achieve the above-mentioned purpose, the present application also proposes a storage medium, which is a computer-readable storage medium. A computer program is stored on the storage medium. When the computer program is executed by a processor, the steps of the storage unit reliability detection method as described above are implemented.

[0015] The present application provides a method for detecting the reliability of a storage unit. The present application first applies a series of read voltages based on the operating voltage range of the storage unit to more comprehensively understand the performance of the storage unit, and records the corresponding original bit error rate by reading data at each voltage to evaluate the data reading accuracy of the storage unit at different voltages. By comparing the original bit error rate with a preset threshold, the read voltage that makes the original bit error rate equal to the preset threshold can be found, thereby defining the boundary of the effective window of the storage unit, calculating the effective window length through the effective window boundary, further quantifying the reliability of the storage unit, and improving the accuracy of the reliability detection of the storage unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0017] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0018] Figure 1 A schematic diagram of a process flow provided for the first embodiment of the method for detecting reliability of a storage unit of the present application; Figure 2 A schematic diagram of a flow chart provided for the second embodiment of the method for detecting reliability of a storage unit of the present application; Figure 3 A schematic diagram of a process flow provided for Embodiment 3 of the method for detecting reliability of a storage unit of the present application; Figure 4 A flowchart of a fourth embodiment of the memory cell reliability detection method of the present application is provided; Figure 5 A flowchart of a fifth embodiment of a method for detecting reliability of a storage unit according to the present application is provided; Figure 6 Schematic diagram of the device structure of the hardware operating environment involved in the storage unit reliability detection method in the embodiment of the present application.

[0019] The purpose, features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0020] It should be understood that the specific embodiments described herein are only used to explain the technical solutions of the present application and are not used to limit the present application.

[0021] In order to better understand the technical solution of the present application, a detailed description will be given below in conjunction with the accompanying drawings and specific implementation methods.

[0022] The main solutions of the embodiments of this application are: At present, the traditional method of measuring Flash storage reliability is to use the raw bit error rate, which reflects the probability of data reading errors in the storage unit. However, the raw bit error rate has a significant disadvantage. It changes with the read voltage. If the read voltage is set too high, some data units that should have been read correctly will be misjudged as errors. If the read voltage is set too low, the charge in the storage unit may not be fully stimulated, causing some units that actually store data to be misjudged as empty or not storing data, which will increase the number of read errors and ultimately lead to low accuracy in storage unit reliability detection.

[0023] The present application applies a series of read voltages based on the operating voltage range of the storage cell to more comprehensively understand the performance of the storage cell. By reading data at each voltage and recording the corresponding raw bit error rate, the data reading accuracy of the storage cell at different voltages is evaluated. By comparing the raw bit error rate with a preset threshold, the read voltage that makes the raw bit error rate equal to the preset threshold can be found, thereby defining the boundary of the effective window of the storage cell. The effective window length is calculated through the effective window boundary, and the reliability of the storage cell is further quantified, thereby improving the accuracy of the reliability detection of the storage cell.

[0024] It should be noted that the execution subject of this embodiment can be a storage unit reliability detection device, or a computing service device with data processing, network communication and program running functions, such as a tablet computer, a personal computer, a mobile phone, etc., or a control device of a storage unit reliability detection device capable of realizing the above functions, etc. This embodiment does not specifically limit this. The following takes the storage unit reliability detection device as an example of the execution subject to illustrate this embodiment and the following embodiments.

[0025] Embodiment 1 Based on this, the present application proposes a storage unit reliability detection method of the first embodiment, please refer to Figure 1 , the storage unit reliability detection method comprises: Step S100 , applying a read voltage to a memory cell according to a read voltage sequence.

[0026] In this embodiment, the memory cell is a Flash memory cell for storing data, which is a non-volatile memory cell capable of retaining data after power failure. The read voltage sequence is a series of preset read voltage values ​​used to test the performance of the memory cell under different voltages, and the read voltage is a voltage applied when reading data in the memory cell.

[0027] Exemplarily, the operating voltage range of the memory cell is determined based on its specifications and technical documents, and within the operating voltage range, a series of equally spaced read voltage values ​​covering the entire operating voltage range are designed, and voltage is applied to the memory cell according to the designed read voltage sequence.

[0028] Step S200 , recording the original bit error rate of the data in the storage cell when each read voltage is applied.

[0029] By reading and parsing the data in the storage cell, the original bit error rate under different read voltages is accurately calculated, providing accurate data support for the reliability evaluation of the storage cell.

[0030] In this embodiment, the raw bit error rate (RBER) is a reading bit error rate, which indicates the ratio of the number of erroneous bits to the total number of read bits when reading data in a storage unit.

[0031] As an optional implementation, at each read voltage, the data in the storage unit is read, and the read data is parsed to determine the number of erroneous bits in the data, calculate the ratio of the number of erroneous bits to the total number of data bits, and record the original bit error rate at each voltage point.

[0032] Step S300, determining a read voltage corresponding to an original bit error rate equal to a preset threshold as a valid window boundary.

[0033] In this embodiment, the preset threshold is the upper limit of the raw bit error rate, which is used to determine whether the data reading accuracy of the Flash memory under a specific read voltage meets the requirements. The effective window is a voltage interval within the operating voltage range of the Flash memory that can maintain the data reading accuracy to meet the preset threshold requirements. The boundary of the effective window is determined by the read voltage corresponding to the raw bit error rate equal to the preset threshold.

[0034] Exemplarily, the recorded raw bit error rate data are traversed, compared with preset thresholds, and the read voltage corresponding to the first raw bit error rate that is equal to or exceeds the preset threshold is found as the upper boundary of the valid window, and the first raw bit error rate is lower than the preset threshold but the raw bit error rate of the next read voltage point is higher than the threshold. At this time, the corresponding read voltage is used as the lower boundary of the valid window.

[0035] Optionally, a read voltage corresponding to an original bit error rate equal to a preset threshold is estimated by interpolation method as a valid window boundary.

[0036] Step S400, determining the length of the effective window according to the effective window boundary.

[0037] By calculating the effective window length of the storage cell, we can understand within what voltage range the storage cell can stably and accurately store and read data, that is, keep its original bit error rate below a preset threshold, and then evaluate the reliability of the storage cell.

[0038] In this embodiment, the length of the effective window is the difference between the upper boundary voltage and the lower boundary voltage of the effective window, which represents the read voltage variation range within which the memory cell maintains data accuracy.

[0039] As an optional implementation, the length of the effective window is determined by calculating the difference between the upper boundary of the effective window and the lower boundary of the effective window.

[0040] Step S500, determining a detection result of the storage unit according to the length of the effective window, where the detection result is used to characterize the reliability of the storage unit when storing data.

[0041] Exemplarily, the detection result of the storage unit is determined based on the measured effective window length, combined with the specifications and performance requirements of the storage unit. If the effective window length is greater than or equal to a specified threshold, the storage unit is considered to be reliable; otherwise, the storage unit is considered to have performance problems or reliability problems.

[0042] The present embodiment provides a method for detecting the reliability of a storage unit. The present embodiment first applies a series of read voltages based on the operating voltage range of the storage unit to more comprehensively understand the performance of the storage unit. The corresponding original bit error rate is recorded by reading data at each voltage to evaluate the data reading accuracy of the storage unit at different voltages. By comparing the original bit error rate with a preset threshold, the read voltage that makes the original bit error rate equal to the preset threshold can be found, thereby defining the boundary of the effective window of the storage unit. The effective window length is calculated through the effective window boundary, and the reliability of the storage unit is further quantified, thereby improving the accuracy of the reliability detection of the storage unit.

[0043] Based on the first embodiment, the second embodiment of the present application proposes a method for detecting the reliability of a storage unit, referring to Figure 2 , step S200 includes: Step S210 , reading data in the memory cell by applying a read voltage, and determining a read result corresponding to each read voltage.

[0044] The data in the storage unit is read by applying different read voltages, and the corresponding read result under each read voltage is obtained to determine the influence of different read voltages on the accuracy of the read data.

[0045] Optionally, before applying the read voltage, the physical and electrical characteristics such as the read voltage range and data retention time are determined according to the type of the memory cell, and a read circuit is selected according to the characteristics of the memory cell. The read circuit includes a programmable voltage source for providing a precise read voltage and a data read interface for reading data from the memory cell, and the memory cell is connected to the read circuit.

[0046] Exemplarily, at each read voltage, data is read from the storage unit through the data read interface, and the read result is recorded.

[0047] In some embodiments, while recording the read results, the integrity of the data can be verified by comparing the read results under different read voltages.

[0048] Step S220 , analyzing the reading result to determine the original bit error rate corresponding to the read voltage, and recording the original bit error rate.

[0049] By analyzing the reading results at each reading voltage in detail, the error rate information about the memory cell under different voltage conditions is obtained.

[0050] Exemplarily, the read result is parsed to extract the binary data, and the raw bit error rate is calculated according to the expected state of the storage unit, and the calculated raw bit error rate is associated with the corresponding read voltage.

[0051] Optionally, step S220 includes: Step S221 , analyzing the read result of each read voltage to determine the total number of data bits and the number of error bits of the read result.

[0052] Analyzing the reading results at each reading voltage and determining the total number of data bits read and the number of error bits that occurred is the basis for calculating the raw bit error rate to determine the accuracy and error rate of the data at different reading voltages.

[0053] In this embodiment, the total number of data bits refers to the total number of data bits in the read result, that is, the total length of the data. The number of error bits refers to the number of bits in the read result where errors occur, that is, the number of bits that are inconsistent with the original data.

[0054] Exemplarily, for each read result under a read voltage, an analysis process is performed to extract the data content, calculate the total number of bits of data in the read result, and compare the read result with the original data to count the number of bits where errors occur.

[0055] Step S222, calculating the original bit error rate according to the ratio of the number of error bits to the total number of data bits.

[0056] The raw bit error rate is calculated to quantify the effect of different read voltages on data reading accuracy.

[0057] Exemplarily, the raw bit error rate corresponding to each read voltage is calculated using the formula “raw bit error rate=number of error bits / total number of data bits”.

[0058] Step S223 , associating each read voltage with the corresponding original bit error rate and recording them.

[0059] Each read voltage is associated with its corresponding original bit error rate and recorded to establish a mapping relationship between the read voltage and the original bit error rate, providing data support for subsequent adjustment of the read voltage and improvement of data reading accuracy.

[0060] Exemplarily, each read voltage is associated with its corresponding original bit error rate to form a mapping relationship, and the mapping relationship between the read voltage and the original bit error rate is recorded in a table or a database.

[0061] The present embodiment provides a method for detecting the reliability of a storage unit. The present embodiment first determines the reading result corresponding to each voltage by applying different reading voltages, analyzes the reading result and determines the total number of data bits and the number of error bits, and calculates the original bit error rate to intuitively display the reading quality of data under different reading voltages. By recording the mapping relationship between the reading voltage and the original bit error rate, the data reading quality under different reading voltages is accurately found and analyzed, thereby providing basic data for the evaluation of data accuracy.

[0062] Based on the first or second embodiment, the third embodiment of the present application proposes a storage unit reliability detection method, referring to Figure 3 , step S300 includes: Step S310 , comparing the original bit error rate recorded at each read voltage with a preset threshold.

[0063] In this embodiment, the preset threshold is a preset RBER threshold, which is set according to the performance requirements and data reliability requirements of the storage system and represents the upper limit of the acceptable raw bit error rate.

[0064] Step S320: taking the read voltage corresponding to when the original bit error rate is equal to the preset threshold for the first time as the lower boundary of the valid window.

[0065] In the performance evaluation process of the storage system, the effective window represents a range of read voltages within which the raw bit error rate remains below a preset threshold, thereby ensuring data reliability. Taking the read voltage corresponding to when the raw bit error rate first equals the preset threshold as the lower boundary of the effective window is the first step in determining this window. Finding a starting point for the read voltage, from which the raw bit error rate begins to gradually rise as the read voltage increases, but remains within an acceptable range.

[0066] In some implementations, step S320 further includes: Step S321: If the original bit error rate equal to the preset threshold value does not appear, then check the trend of the recorded original bit error rate changing with the read voltage.

[0067] Exemplarily, the recorded original bit error rate and the read voltage are matched, and a curve graph of the original bit error rate changing with the read voltage is drawn to determine whether a point appears in the curve graph where the original bit error rate is equal to a preset threshold. If not, the changing trend of the original bit error rate is further observed.

[0068] Step S322, identifying all downward trend change points where the original bit error rate changes from being higher than a preset threshold to being lower than a preset threshold.

[0069] In this embodiment, the downward trend change point is an obvious inflection point or change point formed in the curve of the original bit error rate changing with the read voltage, where the original bit error rate starts to decrease from a higher value.

[0070] Exemplarily, in a graph of the raw bit error rate versus read voltage, an inflection point where the raw bit error rate starts to decrease from being higher than a preset threshold, ie, a decreasing trend change point, is found, and all decreasing trend change points are recorded.

[0071] Step S323, calculating the absolute value of the difference between the downward trend change point and the preset threshold, and taking the read voltage corresponding to the original bit error rate with the smallest absolute value as the lower boundary of the valid window.

[0072] Exemplarily, among all the identified downward trend change points, the point where the original bit error rate is closest to the preset threshold is found, and the read voltage corresponding to the point is used as the lower boundary of the valid window.

[0073] Optionally, if there are multiple points close to the preset threshold, the point that is closest and at which the original bit error rate is lower than the preset threshold for the first time is selected as the lower boundary.

[0074] In step S330, the reading voltage corresponding to when the original bit error rate is equal to the preset threshold again after the reading voltage is increased is used as the upper boundary of the valid window.

[0075] By finding the read voltage when the original bit error rate is equal to the preset threshold again, it can be defined that above this voltage, the data reading quality will no longer meet the requirements, and the read voltage at this time is determined as the upper boundary of the valid window.

[0076] Exemplarily, after the lower boundary of the valid window has been determined, the value of the read voltage continues to be gradually increased. As the read voltage increases, the change in the original bit error rate is monitored. When the original bit error rate is equal to the preset threshold again, the value of the read voltage at this time is recorded and this read voltage is used as the upper boundary of the valid window.

[0077] Optionally, step S330 further includes: Step S331: If the original bit error rate equal to the preset threshold value does not appear, then check the trend of the recorded original bit error rate changing with the read voltage.

[0078] Exemplarily, after determining the lower boundary of the valid window, continue to increase the reading voltage and record it, correspond the recorded raw bit error rate and the reading voltage, draw a curve graph of the raw bit error rate changing with the reading voltage, and determine whether there is a point in the curve graph where the raw bit error rate is equal to the preset threshold. If not, further observe the changing trend of the raw bit error rate.

[0079] Step S332, identifying all rising trend change points where the original bit error rate changes from being lower than a preset threshold to being higher than a preset threshold.

[0080] In this embodiment, the rising trend change point is in the curve of the raw bit error rate changing with the read voltage, where the raw bit error rate starts to rise from a lower value, forming an obvious inflection point or change point, indicating that as the read voltage further increases, the data reading quality begins to decline.

[0081] Exemplarily, in a graph showing the raw bit error rate versus read voltage, look for a point where the raw bit error rate starts to rise from below a preset threshold, indicating that the raw bit error rate begins to increase significantly, marking a sign that the data reading quality begins to deteriorate, and record all such points, i.e., the points where the rising trend changes.

[0082] Step S333, calculating the absolute value of the difference between the rising trend change point and the preset threshold, and taking the read voltage corresponding to the original bit error rate with the smallest absolute value as the upper boundary of the valid window.

[0083] Exemplarily, among all the identified rising trend change points, the point where the original bit error rate is closest to the preset threshold is found, and the read voltage corresponding to the point is used as the upper boundary of the valid window.

[0084] Optionally, if there are multiple points that are close to the preset threshold but have not clearly exceeded it, the point that is closest and at which the original bit error rate is clearly higher than the preset threshold for the first time may be selected as the upper boundary.

[0085] Alternatively, if the data points are very dense or noisy, more sophisticated analysis methods such as interpolation and fitting may be needed to determine the change point closest to the preset threshold.

[0086] The present embodiment provides a method for detecting the reliability of a storage unit. The present embodiment first determines the upper and lower boundaries of a valid window by comparing the original bit error rate with a preset threshold, thereby accurately finding the read voltage range when the storage unit read reliability is high, laying a foundation for determining the reliability of subsequent storage units.

[0087] Based on any one of the first to third embodiments, the fourth embodiment of the present application proposes a storage unit reliability detection method, referring to Figure 4 , step S500 includes: Step S510: When the length of the valid window is less than or equal to a preset length threshold, determining that the detection result is the first storage data.

[0088] Exemplarily, when the length of the valid window is less than or equal to a preset length threshold, the judgment logic is triggered to determine that the detection result is the first stored data, and the corresponding data identifier is recorded.

[0089] In some implementations, for the first stored data, due to its low reliability, additional processing measures are taken, including data verification, error correction, or data retransmission, to improve the accuracy of the data.

[0090] Step S520: When the length of the effective window is greater than a preset length threshold, the detection result is determined to be second stored data, and the reliability of the second stored data is higher than that of the first stored data.

[0091] In this embodiment, the preset length threshold is a preset standard threshold for determining the length of a valid window.

[0092] The length of the effective window directly reflects the tolerance of the storage cell to the read voltage change. A larger effective window means that the storage cell can maintain data accuracy within a wider read voltage range and therefore has higher reliability. A smaller effective window means that the storage cell is more sensitive to changes in the read voltage and is easily affected by noise or process changes, thereby reducing its reliability.

[0093] Exemplarily, when the length of the detected valid window is greater than a preset length threshold, the detection result is determined to be the second storage data, and a corresponding data identifier is recorded.

[0094] In some implementations, the second stored data is directly used in subsequent data processing or storage operations due to its high reliability, without the need for additional processing measures.

[0095] The present embodiment provides a storage unit reliability detection method. The present embodiment first determines the detection result by comparing the length of the valid window with a preset length threshold, which helps to accurately evaluate the reliability of the storage unit, thereby improving the accuracy of the storage unit reliability detection and providing a basis for subsequent storage strategy optimization.

[0096] Based on any one of the first to fourth embodiments, the fifth embodiment of the present application proposes a storage unit reliability detection method, referring to Figure 5 , before step S100, including: Step S600: Perform a voltage test on the memory cell to determine the actual operating voltage range of the memory cell.

[0097] In this embodiment, the operating voltage range is a voltage interval in which the Flash storage unit can operate, and information about the operating voltage range is obtained from the specification sheet and technical documents of the Flash memory.

[0098] Exemplarily, a series of voltage values ​​are applied to the memory cell using a test device, and the performance of the memory cell such as read error rate and read speed at different voltages is recorded. The test data is analyzed to determine the voltage range in which the memory cell can operate stably, i.e., the operating voltage range.

[0099] Step S700, setting the voltage interval in the read voltage sequence according to the accuracy requirement of the memory cell.

[0100] In this embodiment, the precision requirement is the requirement for the accuracy of reading data from the storage unit. The higher the precision, the smaller the error when reading data. The voltage interval is the difference between two adjacent voltage values ​​in the read voltage sequence. The size of the voltage interval determines the resolution of the read voltage sequence.

[0101] Exemplarily, the required reading accuracy is determined according to the accuracy requirement of the storage unit, and the voltage interval in the reading voltage sequence is set according to the reading accuracy. The higher the accuracy requirement, the smaller the voltage interval.

[0102] Step S800: determining a voltage reading sequence according to an operating voltage range and a voltage interval.

[0103] Exemplarily, the starting voltage and the ending voltage of the read voltage sequence are determined according to the operating voltage range, and a series of equally spaced voltage values ​​are generated within the operating voltage range according to a set voltage interval to form the read voltage sequence.

[0104] The present embodiment provides a method for detecting the reliability of a storage unit. The present embodiment first performs a voltage test on the storage unit to determine the voltage range of the storage unit in actual operation, and sets the voltage interval in the read voltage sequence according to the accuracy requirement of the storage unit, thereby constructing a suitable read voltage sequence for subsequent read testing of the storage unit, thereby evaluating the performance and reliability of the storage unit under different voltages.

[0105] It should be noted that the above examples are only used to understand the present application and do not constitute a limitation on the storage unit reliability detection method of the present application. More simple transformations based on this technical concept are all within the protection scope of the present application.

[0106] The present application provides a storage unit reliability detection device, which includes: at least one processor; and a memory that is communicatively connected to the at least one processor; wherein the memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the storage unit reliability detection method in the above-mentioned embodiment one.

[0107] Reference below Figure 6 , which shows a schematic diagram of the structure of a storage unit reliability detection device suitable for implementing the embodiment of the present application. The storage unit reliability detection device in the embodiment of the present application may include but is not limited to mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (Personal Digital Assistants), PADs (Portable Application Descriptions), PMPs (Portable Media Players), vehicle-mounted terminals (such as vehicle-mounted navigation terminals), etc., and fixed terminals such as digital TVs, desktop computers, etc. Figure 6 The storage unit reliability detection device shown is merely an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0108] like Figure 6As shown, the storage unit reliability detection device may include a processing device 1001 (such as a central processing unit, a graphics processor, etc.), which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM: Read Only Memory) 1002 or a program loaded from a storage device 1003 to a random access memory (RAM: Random Access Memory) 1004. In RAM1004, various programs and data required for the operation of the storage unit reliability detection device are also stored. The processing device 1001, ROM1002 and RAM1004 are connected to each other through a bus 1005. An input / output (I / O) interface 1006 is also connected to the bus. Generally, the following systems can be connected to the I / O interface 1006: an input device 1007 including, for example, a touch screen, a touch pad, a keyboard, a mouse, an image sensor, a microphone, an accelerometer, a gyroscope, etc.; an output device 1008 including, for example, a liquid crystal display (LCD: Liquid Crystal Display), a speaker, a vibrator, etc.; a storage device 1003 including, for example, a magnetic tape, a hard disk, etc.; and a communication device 1009. The communication device 1009 can allow the storage unit reliability detection device to communicate with other devices wirelessly or by wire to exchange data. Although the figure shows a storage unit reliability detection device with various systems, it should be understood that it is not required to implement or have all the systems shown. More or fewer systems can be implemented or provided alternatively.

[0109] In particular, according to the embodiments disclosed in the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, the embodiments disclosed in the present application include a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network through a communication device, or installed from a storage device 1003, or installed from a ROM 1002. When the computer program is executed by the processing device 1001, the above-mentioned functions defined in the method of the embodiment disclosed in the present application are executed.

[0110] The storage unit reliability detection device provided by the present application adopts the storage unit reliability detection method in the above embodiment, which can solve the technical problem of how to improve the accuracy of storage unit reliability detection. Compared with the prior art, the beneficial effects of the storage unit reliability detection device provided by the present application are the same as the beneficial effects of the storage unit reliability detection method provided by the above embodiment, and the other technical features in the storage unit reliability detection device are the same as the features disclosed in the method of the previous embodiment, which will not be repeated here.

[0111] It should be understood that the various parts disclosed in this application can be implemented by hardware, software, firmware or a combination thereof. In the description of the above embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0112] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0113] The present application provides a computer-readable storage medium having computer-readable program instructions (ie, computer programs) stored thereon, and the computer-readable program instructions are used to execute the storage unit reliability detection method in the above-mentioned embodiment.

[0114] The computer-readable storage medium provided in the present application may be, for example, a USB flash drive, but is not limited to electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, systems or devices, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM: Random Access Memory), a read-only memory (ROM: Read Only Memory), an erasable programmable read-only memory (EPROM: Erasable Programmable Read Only Memory or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM: CD-Read Only Memory), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this embodiment, the computer-readable storage medium may be any tangible medium containing or storing a program, which may be used by or in combination with an instruction execution system, system or device. The program code contained on the computer-readable storage medium may be transmitted using any appropriate medium, including but not limited to: wires, optical cables, RF (Radio Frequency: Radio Frequency), etc., or any suitable combination of the above.

[0115] The computer-readable storage medium may be included in the storage unit reliability detection device; or may exist independently without being assembled into the storage unit reliability detection device.

[0116] The above-mentioned computer-readable storage medium carries one or more programs. When the above-mentioned one or more programs are executed by the storage unit reliability detection device, the storage unit reliability detection device can write a computer program code for performing the operation of the present application in one or more programming languages ​​or a combination thereof. The above-mentioned programming language includes an object-oriented programming language, such as Java, Smalltalk, C++, and also includes a conventional procedural programming language, such as "C" language or a similar programming language. The program code can be executed completely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on a remote computer, or completely on a remote computer or server. In the case of a remote computer, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or can be connected to an external computer (for example, using an Internet service provider to connect through the Internet).

[0117] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, function and operation of the system, method and computer program product according to various embodiments of the present application. In this regard, each square box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the square box can also occur in a sequence different from that marked in the accompanying drawings. For example, two square boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each square box in the block diagram and / or flow chart, and the combination of the square boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0118] The modules involved in the embodiments described in this application may be implemented by software or hardware, wherein the name of the module does not constitute a limitation on the unit itself in some cases.

[0119] The readable storage medium provided in the present application is a computer-readable storage medium, which stores computer-readable program instructions (i.e., computer programs) for executing the above-mentioned storage unit reliability detection method, and can solve the technical problem of how to improve the accuracy of storage unit reliability detection. Compared with the prior art, the beneficial effects of the computer-readable storage medium provided in the present application are the same as the beneficial effects of the storage unit reliability detection method provided in the above-mentioned embodiment, and will not be described in detail here.

[0120] The above are only some embodiments of the present application, and are not intended to limit the patent scope of the present application. All equivalent structural changes made using the contents of the present application specification and drawings under the technical concept of the present application, or direct / indirect application in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A method for detecting reliability of a storage unit, characterized in that: The storage unit reliability detection method comprises: applying a read voltage to the memory cell according to a read voltage sequence; When each of the read voltages is applied, recording the original bit error rate of the data in the storage cell; Determine the read voltage corresponding to the original bit error rate equal to a preset threshold as a valid window boundary; Determining the length of the effective window according to the effective window boundary; A detection result of the storage unit is determined according to the length of the effective window, and the detection result is used to characterize the reliability of the storage unit when storing data.

2. The storage unit reliability detection method according to claim 1, characterized in that: The step of recording the original bit error rate of the data in the storage unit when applying each of the read voltages comprises: Reading data in the storage unit by applying the read voltage, and determining a read result corresponding to each read voltage; The read result is analyzed to determine the original bit error rate corresponding to the read voltage, and the original bit error rate is recorded.

3. The storage unit reliability detection method according to claim 2, characterized in that: The step of analyzing the read result to determine the original bit error rate corresponding to the read voltage and recording the original bit error rate includes: Parsing the read result of each of the read voltages to determine the total number of data bits and the number of error bits of the read result; Calculating the original bit error rate according to the ratio of the number of error bits to the total number of data bits; Each of the read voltages is associated with the corresponding raw bit error rate and recorded.

4. The storage unit reliability detection method according to claim 1, characterized in that: The step of determining the read voltage corresponding to the original bit error rate equal to the preset threshold as the effective window boundary comprises: Comparing the original bit error rate recorded at each of the read voltages with the preset threshold; The read voltage corresponding to when the original bit error rate is equal to the preset threshold for the first time is used as the lower boundary of the valid window; The reading voltage corresponding to when the original bit error rate is equal to the preset threshold again after the reading voltage is increased is used as the upper boundary of the effective window.

5. The storage unit reliability detection method according to claim 4, characterized in that: The step of using the read voltage corresponding to when the original bit error rate is equal to the preset threshold for the first time as the lower boundary of the valid window also includes: If the original bit error rate equal to the preset threshold value does not appear, checking the trend of the recorded original bit error rate changing with the read voltage; Identify all downward trend change points where the original bit error rate changes from being higher than the preset threshold to being lower than the preset threshold; The absolute value of the difference between the downward trend change point and the preset threshold is calculated, and the read voltage corresponding to the original bit error rate with the smallest absolute value is used as the lower boundary of the effective window.

6. The storage unit reliability detection method according to claim 4, characterized in that: The step of using the read voltage corresponding to when the original bit error rate is equal to the preset threshold again after increasing the read voltage as the upper boundary of the valid window also includes: If the original bit error rate equal to the preset threshold value does not appear, checking the trend of the recorded original bit error rate changing with the read voltage; Identify all rising trend change points of the original bit error rate from being lower than the preset threshold to being higher than the preset threshold; The absolute value of the difference between the rising trend change point and the preset threshold is calculated, and the read voltage corresponding to the original bit error rate with the smallest absolute value is used as the upper boundary of the valid window.

7. The storage unit reliability detection method according to claim 1, characterized in that: The step of determining the detection result of the storage unit according to the length of the effective window, wherein the detection result is used to characterize the reliability of the storage unit when storing data comprises: When the length of the valid window is less than or equal to a preset length threshold, determining that the detection result is the first stored data; When the length of the effective window is greater than a preset length threshold, it is determined that the detection result is second stored data, and the reliability of the second stored data is higher than that of the first stored data.

8. The storage unit reliability detection method according to claim 1, characterized in that: Before the step of applying a read voltage to the memory cell according to the read voltage sequence, the method includes: Performing a voltage test on the storage unit to determine an actual operating voltage range of the storage unit; According to the accuracy requirement of the storage unit, setting the voltage interval in the read voltage sequence; The read voltage sequence is determined according to the operating voltage range and the voltage interval.

9. A storage unit reliability testing device, characterized in that: The device comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the storage unit reliability detection method according to any one of claims 1 to 8.

10. A storage medium, characterized in that: The storage medium is a computer-readable storage medium, and a computer program is stored on the storage medium. When the computer program is executed by a processor, the steps of the storage unit reliability detection method according to any one of claims 1 to 8 are implemented.

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