Gallium oxide crystal growing device adopting EFG method

Abstract

The invention relates to the technical field of crystal growth, and discloses an EFG method gallium oxide crystal growth device which comprises a crucible, the crucible comprises a cavity used for containing gallium oxide crystal raw materials, and a plurality of grooves are formed in the bottom of the cavity; the mold assembly comprises two mold plate bodies extending in the first direction and a plurality of clamping units connected with the mold plate bodies, the clamping units are matched with the grooves, and the mold plate bodies are oppositely arranged at intervals in the second direction; the clamping units on the two plates are configured to be capable of oppositely moving in the groove in the second direction so that the two plate bodies can be installed at the bottom of the crucible. The device has the beneficial effects that the crucible and the mold are detachably connected, so that the mold or the crucible can be conveniently and independently replaced, no welding seam exists between the crucible and the mold, the growth failure probability of the gallium oxide crystal is reduced, and the yield and the growth efficiency are improved.

Description

Technical Field

[0001] The invention relates to the technical field of crystal growth, and in particular to a gallium oxide crystal growth device. Background Art

[0002] The EFG method is the mainstream method for growing gallium oxide single crystals. The mold is generally placed in a crucible, and the crucible and the mold are fixed by welding. During the growth of gallium oxide crystals, the mold and the crucible are corroded by gallium oxide at different rates, resulting in different service lives. However, since the crucible and the mold are welded and fixed, the crucible and the mold can only be replaced as a whole, and the mold or the crucible cannot be replaced separately, which is costly. In addition, since the crucible and the mold are welded and fixed, the gallium oxide crystal is prone to failure at the weld during growth, resulting in a low gallium oxide crystal yield and reduced crystal growth efficiency. Summary of the invention

[0003] The purpose of the present invention is to provide a gallium oxide crystal growth device using an EFG method, in which the crucible and the mold are detachably connected, so that the mold or the crucible can be replaced separately, thereby reducing costs. At the same time, there is no weld between the crucible and the mold, thereby reducing the probability of failure in the growth of gallium oxide crystals and improving the yield rate and growth efficiency.

[0004] In order to achieve the above object, the present invention provides an EFG method gallium oxide crystal growth device, comprising:

[0005] A crucible, the crucible comprising a cavity for containing gallium oxide crystal raw materials, the bottom of the cavity being provided with a groove;

[0006] A mold assembly, the mold assembly includes two mold plates extending in a first direction, and the two mold plates are arranged opposite to each other and spaced apart in a second direction, the second direction is perpendicular to the first direction in a horizontal plane, the two mold plates are configured to be able to move toward each other along the second direction through the groove so as to be installed on the bottom of the crucible, and the two mold plates are configured to be able to move away from each other along the second direction through the groove so as to be disassembled from the bottom of the crucible.

[0007] The present invention also provides a crucible for growing gallium oxide crystals by an EFG method, wherein the crucible comprises a cavity for containing gallium oxide crystal raw materials, and a groove is provided at the bottom of the cavity;

[0008] The groove is used to install the mold assembly on the bottom of the cavity, and the mold assembly includes two mold plates extending in a first direction and installable on the bottom of the cavity. The groove is configured to allow the two mold plates to pass through and move toward each other along the second direction so that the two mold plates are installed on the bottom of the crucible, and the groove is configured to allow the two mold plates to pass through and move away from each other along the second direction so that the two mold plates are removed from the bottom of the crucible. The second direction is perpendicular to the first direction in a horizontal plane.

[0009] The present invention also provides a mold plate for growing gallium oxide crystals by an EFG method, wherein the mold plate is used to be installed in a crucible, wherein the crucible includes a cavity for containing a gallium oxide crystal raw material, wherein the mold plate is configured to extend in a first direction along the bottom of the cavity and be installed at the bottom of the cavity, wherein a groove is provided at the bottom of the cavity, wherein the mold plate is configured to be movable along a second direction through the groove so as to be installed at the bottom of the cavity or removed from the bottom of the cavity, wherein the second direction is perpendicular to the first direction in a horizontal plane.

[0010] The present invention also provides another EFG method gallium oxide crystal growth device, comprising:

[0011] A crucible, the crucible comprising a cavity for containing gallium oxide crystal raw materials, the bottom of the cavity being provided with a plurality of grooves;

[0012] A mold assembly, the mold assembly includes two mold plates extending in a first direction and a plurality of clamping units connected to each of the mold plates, the clamping units cooperate with the grooves, the mold plates are opposite and spaced apart in a second direction, the second direction is perpendicular to the first direction in a horizontal plane, the clamping units on the two plates are configured to be able to move toward each other in the groove along the second direction so that the two plates can be installed on the bottom of the crucible, and the clamping units on the two mold plates are configured to be able to move away from each other in the groove along the second direction so that the two mold plates can be removed from the bottom of the crucible.

[0013] Compared with the prior art, the EFG method gallium oxide crystal growth device of the embodiment of the present invention has the following beneficial effects: a groove is provided at the bottom of the crucible, and the mold plate is configured to be able to move toward each other along the second direction through the groove to be installed at the bottom of the crucible. At the same time, the mold plate is configured to be able to move backward along the second direction through the groove to be removed from the bottom of the crucible, thereby realizing a detachable connection between the mold plate and the crucible, facilitating the replacement of the crucible and the mold plate separately, and reducing costs. At the same time, there is no weld between the crucible and the mold, which reduces the probability of failure in the growth of gallium oxide crystals and improves the yield rate and growth efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic structural diagram of a gallium oxide growth device implementing the EFG method of the present invention;

[0015] Figure 2 is a cross-sectional view of a gallium oxide growth device implementing the EFG method of the present invention;

[0016] Figure 3 is a top view of a crucible of a gallium oxide growth device implementing an EFG method according to the present invention;

[0017] Figure 4 is a cross-sectional view of a crucible of a gallium oxide growth device implementing an EFG method according to the present invention;

[0018] Figure 5 It is a flow path diagram of the melt of the gallium oxide growth device implementing the EFG method of the present invention;

[0019] Figure 6 It is a schematic structural diagram of a mold plate body of a gallium oxide growth device implemented by the EFG method of the present invention;

[0020] Figure 7 It is a front view of a mold plate of a gallium oxide growth device implementing the EFG method of the present invention.

[0021] In the figure, 1, crucible, 11, groove; 111, first sub-trough body; 112, second sub-trough body; 2, mold plate body; 21, first base; 22, second base; 23, leg part; 3, main melt flow channel; X, first direction; Y, second direction; Z, third direction. DETAILED DESCRIPTION

[0022] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0023] In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "back", "inside", "outside", etc. used in the present invention to indicate the orientation or positional relationship are based on the positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred devices and elements must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0024] In the description of the present invention, it should be understood that the present invention uses the terms "first", "second", etc. to describe various information, but these information should not be limited to these terms, and these terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present invention, "first" information may also be referred to as "second" information, and similarly, "second" information may also be referred to as "first" information.

[0025] See also Figures 1 to 7 The preferred embodiment of the present invention is an EFG method gallium oxide crystal growth device, comprising: a crucible 1 and a mold assembly, wherein the crucible 1 and the mold assembly are detachably connected, which is convenient for replacing the crucible 1 or the mold assembly separately, thereby reducing costs. At the same time, the weld-free design is conducive to improving the yield rate of gallium oxide crystal growth. For the convenience of description, refer to Figure 1 , Figure 2 , Figure 3 , define the length direction of the mold plate 2 as the first direction X, the width direction as the second direction YY, and the height direction as the third direction Z. The first direction X, the second direction Y, and the third direction Z intersect each other perpendicularly.

[0026] In some embodiments, see Figure 1 The crucible 1 includes a cavity for containing gallium oxide crystal raw materials, and a groove 11 is provided at the bottom of the cavity, wherein the groove 11 is used to assemble with the mold assembly. Specifically, the mold assembly includes two mold plates 2 extending in a first direction X, and the two mold plates 2 are arranged oppositely and spaced in a second direction Y, the second direction Y is perpendicular to the first direction X in a horizontal plane, the two mold plates 2 are configured to move toward each other along the second direction Y through the groove 11 to be installed at the bottom of the crucible 1, and the two mold plates 2 are configured to move away from each other along the second direction Y through the groove 11 to be disassembled from the bottom of the crucible 1.

[0027] In some embodiments, the crucible 1 includes a cavity for holding a gallium oxide crystal raw material, and a groove 11 is provided at the bottom of the cavity; the groove 11 is used to install the mold assembly at the bottom of the cavity, and the mold assembly includes two mold plates 2 extending in a first direction X and installable at the bottom of the cavity, and the groove 11 is configured to allow the two mold plates 2 to pass through and move toward each other along a second direction Y so that the two mold plates 2 are installed at the bottom of the crucible 1, and the groove 11 is configured to allow the two mold plates 2 to pass through and move away from each other along the second direction Y so that the two mold plates 2 are disassembled from the bottom of the crucible 1, and the second direction Y is perpendicular to the first direction X in a horizontal plane.

[0028] In some embodiments, the mold plate 2 is used to be installed in the crucible 1. Specifically, the crucible 1 includes a cavity for holding a gallium oxide crystal raw material. The mold plate 2 is configured to extend in a first direction X along the bottom of the cavity and be installed at the bottom of the cavity. A groove 11 is provided at the bottom of the cavity. The mold plate 2 is configured to be movable along a second direction Y through the groove 11 to be installed at the bottom of the cavity or removed from the bottom of the cavity. The second direction Y is perpendicular to the first direction X in a horizontal plane.

[0029] In some embodiments, the crucible 1 includes a cavity for containing gallium oxide crystal raw materials. In order to improve the assembly accuracy with the mold assembly, a plurality of grooves 11 are opened at the bottom of the cavity. Figure 1 As shown, the grooves 11 are arranged at intervals along the first direction X. In order to facilitate the assembly of the mold assembly in the groove 11, the mold assembly includes two mold plates 2 extending in the first direction X and a plurality of clamping units connected to each mold plate 2, wherein the clamping units cooperate with the groove 11. Specifically, the mold plates 2 are arranged oppositely and at intervals in the second direction Y, the second direction Y is perpendicular to the first direction X in the horizontal plane, the clamping units on the two plates are configured to move toward each other in the groove 11 along the second direction Y so that the two plates are installed at the bottom of the crucible 1, and the clamping units on the two mold plates 2 are configured to move back and forth in the groove 11 along the second direction Y so that the two mold plates 2 are removed from the bottom of the crucible 1. The two mold plates 2 form a main melt flow channel 3 between the opposite side walls in the second direction Y, and the molten soup in the cavity is siphoned by the surface tension of the main melt flow channel 3, thereby realizing the growth of gallium oxide crystals in the third direction Z.

[0030] In some embodiments, in order to facilitate the design of the structure of the groove 11, the groove 11 includes a first sub-groove body 111 and a second sub-groove body 112 that are connected. In this embodiment, in order to facilitate the integrated processing of the groove 11, the first sub-groove body 111 is arranged on both sides of the second sub-groove body 112 in the second direction Y. In some other embodiments, one groove 11 includes two first sub-grooves 111 and two second sub-grooves 112, wherein one sub-groove body is connected to one second sub-groove body 112, and the two second sub-grooves 112 can be disconnected in the second direction Y. In order to facilitate the disassembly and assembly of the mold plate 2 and the groove 11, the clamping units on the two mold plate bodies 2 are configured to enter from the first sub-groove body 111 and move into the second sub-groove body 112 along the second direction Y, so that the mold plate body 2 is installed at the bottom of the crucible 1, and the clamping units on the two mold plate bodies 2 are configured to be able to move out of the second sub-groove body 112 along the second direction Y, so that the mold plate body 2 can be disassembled from the first sub-groove body 111 to the bottom of the crucible 1.

[0031] In some embodiments, in order to facilitate the opening of the first sub-trough body 111 and the second sub-trough body 112, and to limit the movement of the snap-in unit in the third direction Z after entering the second sub-trough body 112 from the first sub-trough body 111, the opening size of the upper opening of the first sub-trough body 111 in the first direction X is W1, and the opening size of the upper opening of the second sub-trough body 112 in the first direction X is W3, satisfying W1>W3, that is, the snap-in unit is configured to enter the first sub-trough body 111 from the upper opening of the first sub-trough body 111, and the snap-in unit is configured to enter the second sub-trough body 112, and cannot escape from the second sub-trough body 112 from the upper opening of the second sub-trough body 112.

[0032] In some embodiments, in order to facilitate the processing of the first sub-trough body 111 and the second sub-trough body 112, the cross-sectional shape of the first sub-trough body 111 at the bottom of the cavity is a rectangle in the second direction Y; the cross-sectional shape of the second sub-trough body 112 at the bottom of the cavity is a trapezoid in the second direction Y. Since the position of the clamping unit in the third direction Z cannot be moved after being installed in the second sub-trough body 112, the cross-sectional shape of the clamping unit in the second direction Y is adapted to the cross-sectional shape of the second sub-trough body 112 at the bottom of the cavity, and specifically, the cross-sectional shape of the clamping unit in the second direction Y is a trapezoid.

[0033] In some embodiments, the clamping unit includes a base, which is spaced apart along the first direction X at the bottom of the mold plate 2, and is used to limit the position when installing with the second sub-trough 112, and can also support the mold plate 2. In some embodiments, the clamping unit and the mold body can be integrally formed for ease of processing, and in some other embodiments, the clamping unit and the mold body can be assembled after separate processing, and can be adaptively adjusted according to actual design requirements.

[0034] In some embodiments, in order to facilitate the distinction of the structure of the clamping unit, in the first direction X, the two ends of the mold plate body 2 have first clamping units, and the mold plate body 2 has a second clamping unit located between the two first clamping units, wherein the first clamping unit is mainly used to support the mold plate body 2, and the second clamping unit is mainly used to limit the mold plate body 2 in the third direction Z. Specifically, the base of the first clamping unit is the first base 21, and the cross-sectional shape of the first base 21 in the second direction Y is a right-angled trapezoid, and the base of the second clamping unit is the second base 22, and the cross-sectional shape of the second base 22 in the second direction Y is an isosceles trapezoid. Among them, the first base 21 is adapted to the first sub-trough body 111, and the second base 22 is adapted to the second sub-trough body 112. In the second direction Y, a first branch flow channel is formed between the opposite side walls of the first bases 21 adjacent to the two mold plates 2; in the second direction Y, a second branch flow channel is formed between the opposite side walls of the second bases 22 adjacent to the two mold plates 2. The first branch flow channel and the second branch flow channel are both connected to the main melt flow channel 3 for siphoning the molten soup in the groove.

[0035] In some embodiments, in order to facilitate siphoning of the molten soup in the first sub-tank 111, the clamping unit further includes a leg portion 23 disposed on the side of the second base 22 facing the bottom of the crucible 1, the leg portion 23 supports the mold plate 2 at the bottom of the crucible 1, and the connecting surface between the two leg portions 23 is an arc surface. Figure 7The maximum distance between the ends of the two legs 23 facing each other in the first direction X is A3, the maximum span of the arc surface in the first direction X is A4, and A4 / A3=0.5-0.8. The size of the arc surface in the first direction X and the third direction Z should not be too large, otherwise it will affect the siphon efficiency. Figure 5 , the maximum span of the arc surface in the third direction Z is h, 0.1mm≤h≤0.3mm, and the third direction Z is a direction perpendicular to the horizontal plane, that is, the height direction of the mold plate 2. In this embodiment, in order to facilitate the processing of the arc surface, the shape of the arc surface is an arc, and the central angle corresponding to the arc is 25°-50°. In some embodiments, the radius of the circle where the arc is located is equal to A3.

[0036] In some embodiments, see Figure 6 , the thickness of the top of the mold plate 2 is A1, and the thickness of the bottom of the mold plate 2 is A2. In order to make the mold plate 2 have a stable supporting force, at the same time, due to the capillary force during siphoning and the expansion effect during crystal growth, the gap of the main melt flow channel 33 will gradually become larger. Therefore, A2 is generally greater than A1, and satisfies A2 / A1=1.2-1.5. When A2 / A1<1.2, the supporting force is small, and the mold plate 2 cannot always maintain a vertical setting and is easy to tip over. When A2 / A1>1.5, the thickness of the bottom of the mold is too thick, and the processing cost during mold manufacturing is high. Furthermore, the maximum length of the bottom of the first base 21 extending in the first direction X is W, 2A1≤W≤3A1, which further ensures that the support portion 211 has good support.

[0037] In some embodiments, in order to ensure that the second base 22 has a certain structural strength and facilitate processing, the length of the second base 22 in the vertical direction is L, 0.8A1≤L≤1.1A1. Figure 5 , Figure 7 The number of the second bases 22 is 3-6, which can be adjusted according to the growth requirements of the gallium oxide crystal.

[0038] In summary, the embodiment of the present invention provides an EFG method gallium oxide crystal growth device, a groove 11 is provided at the bottom of the crucible 1, and the mold plate 2 is configured to be able to move toward each other along the second direction Y through the groove 11 to be installed at the bottom of the crucible 1. At the same time, the mold plate 2 is configured to be able to move backward along the second direction Y through the groove 11 to be removed from the bottom of the crucible 1, so as to achieve a detachable connection between the mold plate 2 and the crucible 1, and to facilitate the replacement of the crucible 1 and the mold plate 2 separately, thereby reducing costs. At the same time, there is no weld between the crucible 1 and the mold, which reduces the probability of failure in the growth of gallium oxide crystals and improves the yield rate and growth efficiency.

[0039] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present invention. These improvements and substitutions should also be regarded as the scope of protection of the present invention.

Claims

1. An EFG method gallium oxide crystal growth device, characterized in that: include: A crucible, the crucible comprising a cavity for containing gallium oxide crystal raw materials, the bottom of the cavity being provided with a plurality of grooves; A mold assembly, the mold assembly includes two mold plates extending in a first direction and a plurality of clamping units connected to each of the mold plates, the clamping units cooperate with the grooves, the mold plates are opposite and spaced apart in a second direction, the second direction is perpendicular to the first direction in a horizontal plane, the clamping units of the two mold plates are configured to move toward each other in the groove along the second direction so that the two plates are installed on the bottom of the crucible, and the clamping units on the two mold plates are configured to move away from each other in the groove along the second direction so that the two mold plates are removed from the bottom of the crucible.

2. The EFG method gallium oxide crystal growth device according to claim 1, characterized in that: The groove includes a first sub-trough body and a second sub-trough body that are connected to each other, the first sub-trough body is arranged on both sides of the second sub-trough body in the second direction, the clamping units on the two mold plates are configured to enter from the first sub-trough body and move into the second sub-trough body along the second direction respectively, so that the mold plate body is installed on the bottom of the crucible, and the clamping units on the two mold plate bodies are configured to be able to move out of the second sub-trough body along the second direction respectively, so that the mold plate body can be removed from the first sub-trough body to the bottom of the crucible.

3. The EFG method gallium oxide crystal growth device according to claim 2, characterized in that: The opening size of the upper opening of the first sub-trough body in the first direction is W1, and the opening size of the upper opening of the second sub-trough body in the first direction is W3, satisfying W1>W3, and the card connection unit is configured to enter the first sub-trough body from the upper opening of the first sub-trough body, and the card connection unit is configured to enter the second sub-trough body and cannot escape from the second sub-trough body from the upper opening of the second sub-trough body.

4. The EFG method gallium oxide crystal growth device according to claim 3, characterized in that: In the second direction, the cross-sectional shape of the first sub-trough body at the bottom of the cavity is a rectangle; in the second direction, the cross-sectional shape of the second sub-trough body at the bottom of the cavity is a trapezoid.

5. The EFG method gallium oxide crystal growth device according to claim 4, characterized in that: In the second direction, the cross-sectional shape of the clamping unit matches the cross-sectional shape of the second sub-groove at the bottom of the cavity.

6. The EFG method gallium oxide crystal growth device according to claim 5, characterized in that: In the second direction, the cross-section of the clamping unit is trapezoidal.

7. The EFG method gallium oxide crystal growth device according to claim 5, characterized in that: The clamping unit includes a base, and the base is arranged at intervals along the first direction at the bottom of the mold plate.

8. The EFG method gallium oxide crystal growth device according to claim 7, characterized in that: In the first direction, the mold plate body has a first clamping unit at both ends, the base of the first clamping unit is a first base, and the cross-sectional shape of the first base in the second direction is a right-angled trapezoid, and the mold plate body has a second clamping unit located between the first clamping units, the base of the second clamping unit is a second base, and the cross-sectional shape of the second base in the second direction is an isosceles trapezoid.

9. The EFG method gallium oxide crystal growth device according to claim 8, characterized in that: The clamping unit further includes a leg portion arranged on the side of the second base portion facing the bottom of the crucible, the leg portion supports the mold plate body at the bottom of the crucible, and the connecting surface between the two leg portions is an arc surface.

10. The EFG method gallium oxide crystal growth device according to claim 9, characterized in that: The maximum distance between the ends of the two supporting legs disposed in opposite directions in the first direction is A3, the maximum span of the arc surface in the first direction is A4, and A4 / A3=0.5-0.

8.

11. The EFG gallium oxide crystal growth device according to claim 10, characterized in that: The maximum span of the arc surface in the third direction is h, 0.1mm≤h≤0.3mm, and the third direction is a direction perpendicular to the horizontal plane.

12. The EFG method gallium oxide crystal growth device according to claim 10, characterized in that: The shape of the arc surface is an arc, and the central angle corresponding to the arc is 25°-50°.

13. The EFG gallium oxide crystal growth device according to claim 12, characterized in that: The radius of the circle where the arc is located is equal to A3.

14. The EFG method gallium oxide crystal growth device according to claim 8, characterized in that: The thickness of the top of the mold plate is A1, the thickness of the bottom of the mold plate is A2, and A2 / A1=1.2-1.

5.

15. The EFG gallium oxide crystal growth device according to claim 14, characterized in that: The length of the second base in the third direction is L, and 0.8A1≤L≤1.1A1.

16. The EFG method gallium oxide crystal growth device according to claim 14, characterized in that: The maximum length of the bottom of the first base extending in the first direction is W, and 2A1≤W≤3A1.

17. The EFG gallium oxide crystal growth device according to claim 8, characterized in that: The number of the second bases is 3-6.

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