Control method of intelligent power module, intelligent power module and electronic equipment

Abstract

The invention discloses a control method of an intelligent power module, the intelligent power module and electronic equipment, and the control method of the intelligent power module comprises the steps: when the difference value between the current change rate of an insulated gate bipolar transistor in an upper bridge and the current change rate of an insulated gate bipolar transistor in a lower bridge is in a first preset range, the upper bridge is switched to the lower bridge; electrically connecting an emitter pad of the insulated gate bipolar transistor with a fast recovery diode; and when the difference value between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge exceeds a first preset range, the high-voltage output bonding pad is electrically connected with the gate bonding pad. Therefore, the electric connection path between the high-voltage driving chip and the high-voltage power chip in the upper bridge is selectively arranged according to the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge, so that the switching loss and the peak voltage are better.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a control method of an intelligent power module, an intelligent power module and an electronic device. Background Art

[0002] When designing intelligent power module products with different current specifications in the same series, chips with different current specifications are usually adapted in the same frame layout structure, so as to form intelligent power module products with different current specifications under a certain series while reducing costs.

[0003] In the prior art, the wiring method between the driver chip and the power chip in the same frame layout structure is single. When the current specifications of the power chips are different, it will lead to the inability to achieve a relative balance between the switching loss and the peak voltage of the power chip. Often, only one side's value can be within a better range, which will make the performance of the intelligent power module poor. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one object of the present invention is to provide a control method for an intelligent power module, which can improve the performance of the intelligent power module.

[0005] The present invention further proposes an intelligent power module.

[0006] The present invention further provides an electronic device.

[0007] According to an embodiment of the present invention, a control method for an intelligent power module includes: detecting a current change rate of an insulated gate bipolar transistor in an upper bridge; wherein the upper bridge includes a high-voltage drive chip, a high-voltage power chip, and a high-voltage power pin sequentially arranged at intervals in the second direction, the high-voltage power chip includes an insulated gate bipolar transistor and a fast recovery diode spaced apart in the second direction, the high-voltage power chip is arranged on the power side substrate, and a first jumper area and a second jumper area are further arranged on the power side substrate; detecting a current change rate of an insulated gate bipolar transistor in a lower bridge; wherein the upper bridge and the lower bridge are spaced apart in the first direction, the lower bridge includes a low-voltage drive chip, a low-voltage power chip, and a low-voltage power pin sequentially arranged at intervals in the second direction, the low The low-voltage power chip comprises an insulated gate bipolar transistor and a fast recovery diode spaced apart in a second direction, the low-voltage output pad of the low-voltage driving chip is connected to the gate pad of the insulated gate bipolar transistor of the low-voltage power chip, the emitter pad of the insulated gate bipolar transistor of the low-voltage power chip is connected to the fast recovery diode, the fast recovery diode is connected to the low-voltage power pin, and the low-voltage power pin is connected to an external related device; judging whether the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge is within a first preset range; when determining whether the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge are within a first preset range, When the difference between the current change rates of the insulated gate bipolar transistors in the upper bridge and the current change rate of the insulated gate bipolar transistors in the lower bridge is within a first preset range, the high-voltage output pad of the high-voltage driver chip is electrically connected to the gate pad on the insulated gate bipolar transistor of the high-voltage power chip, the voltage source pad of the high-voltage driver chip is electrically connected to the emitter pad on the insulated gate bipolar transistor of the high-voltage power chip, the emitter pad of the insulated gate bipolar transistor of the high-voltage power chip is electrically connected to the fast recovery diode of the high-voltage power chip, and the fast recovery diode of the high-voltage power chip is electrically connected to the high-voltage power pin; when determining the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge When the difference between the change rates exceeds a first preset range, the high-voltage output pad of the high-voltage driver chip is electrically connected to the gate pad on the insulated gate bipolar transistor of the high-voltage power chip, the emitter pad on the insulated gate bipolar transistor of the high-voltage power chip is electrically connected to the fast recovery diode of the high-voltage power chip, the fast recovery diode of the high-voltage power chip is electrically connected to the high-voltage power pin, the first jumper area is selectively electrically connected to the fast recovery diode of the high-voltage power chip or one of the high-voltage power pins, the first jumper area is electrically connected to the second jumper area, and the second jumper area is electrically connected to the voltage source pad of the high-voltage driver chip.

[0008] Therefore, the electrical connection path between the high-voltage driver chip and the high-voltage power chip in the upper bridge is selectively set according to the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge, so that both the switching loss and the peak voltage are optimized, which can improve the performance of the intelligent power module.

[0009] In some examples of the present invention, the step of determining that the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge exceeds the first preset range further includes: determining whether the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge is within a second preset range, wherein the second preset range is greater than the first preset range; when determining that the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge is within the second preset range When within the range, the high-voltage output pad of the high-voltage driver chip is electrically connected to the gate pad on the insulated gate bipolar transistor of the high-voltage power chip, the emitter pad on the insulated gate bipolar transistor of the high-voltage power chip is electrically connected to the fast recovery diode of the high-voltage power chip, the fast recovery diode of the high-voltage power chip is electrically connected to the high-voltage power pin, the first jumper area is electrically connected to the fast recovery diode of the high-voltage power chip, the first jumper area and the second jumper area are electrically connected, and the second jumper area is electrically connected to the voltage source pad of the high-voltage driver chip.

[0010] In some examples of the present invention, the step of determining whether the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge is within a second preset range also includes: when it is determined that the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge exceeds the second preset range, electrically connecting the high-voltage output pad of the high-voltage driver chip to the gate pad on the insulated gate bipolar transistor of the high-voltage power chip, electrically connecting the emitter pad on the insulated gate bipolar transistor of the high-voltage power chip to the fast recovery diode of the high-voltage power chip, electrically connecting the fast recovery diode of the high-voltage power chip to the high-voltage power pin, electrically connecting the first jumper area to the high-voltage power pin, electrically connecting the first jumper area to the second jumper area, and electrically connecting the second jumper area to the voltage source pad of the high-voltage driver chip.

[0011] In some examples of the present invention, the first preset range is set to T1, and T1 satisfies the relationship: T1<400MA / s.

[0012] In some examples of the present invention, the second preset range is set to T2, and T2 satisfies the relationship: 400MA / s≤T2<800MA / s.

[0013] In some examples of the present invention, the current between the low-voltage driver chip and the low-voltage power chip in the lower bridge is constant. When it is determined that the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge is within a first preset range, the current between the low-voltage driver chip and the low-voltage power chip in the upper bridge is set to I1, and I1 satisfies the relationship: 30A<I1≤50A.

[0014] In some examples of the present invention, the current between the low-voltage driver chip and the low-voltage power chip in the lower bridge is constant. When it is determined that the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge exceeds the first preset range and is within the second preset range, the current between the low-voltage driver chip and the low-voltage power chip in the upper bridge is set to I2, and I2 satisfies the relationship: 20A≤I2<30A.

[0015] In some examples of the present invention, the current between the low-voltage driver chip and the low-voltage power chip in the lower bridge is constant. When it is determined that the difference between the current change rate of the insulated gate bipolar transistor in the upper bridge and the current change rate of the insulated gate bipolar transistor in the lower bridge exceeds a second preset range, the current between the low-voltage driver chip and the low-voltage power chip in the upper bridge is set to I3, and I3 satisfies the relationship: I3<20A.

[0016] The intelligent power module according to the embodiment of the present invention is applicable to the control method of the intelligent power module described above.

[0017] An electronic device according to an embodiment of the present invention includes: the above-mentioned intelligent power module.

[0018] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0020] Figure 1is a schematic diagram of a control method for an intelligent power module according to an embodiment of the present invention;

[0021] Figure 2 is a schematic diagram of an intelligent power module according to a first embodiment of the present invention;

[0022] Figure 3 is a schematic diagram of an intelligent power module according to a second embodiment of the present invention;

[0023] Figure 4 FIG. 4 is a schematic diagram of an intelligent power module according to a third embodiment of the present invention.

[0024] Reference numerals:

[0025] 100. Intelligent power module;

[0026] 10. High voltage driver chip; 11. Low voltage driver chip;

[0027] 20. Power side substrate, 21. High voltage power chip; 211. Insulated gate bipolar transistor; 212. Fast recovery diode; 22. Low voltage power chip; 23. High voltage power pin; 24. Low voltage power pin; 25. First jumper area; 26. Second jumper area;

[0028] 30. Go up the bridge. 40. Go down the bridge. DETAILED DESCRIPTION

[0029] Embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Embodiments of the present invention are described in detail below.

[0030] Reference below Figure 1-Figure 4 The control method of the intelligent power module 100 according to the embodiment of the present invention is described. The intelligent power module 100 is applicable to the control method of the intelligent power module 100. The intelligent power module 100 can be applied to electronic devices.

[0031] Combination Figure 1-Figure 4 As shown, the control method of the intelligent power module 100 according to the present invention may mainly include: detecting the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30; wherein the upper bridge 30 includes a high-voltage driving chip 10, a high-voltage power chip 21 and a high-voltage power pin 23 arranged in sequence in the second direction, the high-voltage power chip 21 includes an insulated gate bipolar transistor 211 and a fast recovery diode 212 arranged in the second direction, the high-voltage power chip 21 is arranged on the power side substrate, and the power side substrate is also provided with a first jumper area 25 and a second jumper area 26;

[0032] Detect the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40; wherein the upper bridge 30 and the lower bridge 40 are spaced apart in the first direction, the lower bridge 40 includes a low-voltage drive chip 11, a low-voltage power chip 22 and a low-voltage power pin 24 spaced apart in sequence in the second direction, the low-voltage power chip 22 includes an insulated gate bipolar transistor 211 and a fast recovery diode 212 spaced apart in the second direction, the low-voltage output pad of the low-voltage drive chip 11 is connected to the gate pad of the insulated gate bipolar transistor 211 of the low-voltage power chip 22, the emitter pad of the insulated gate bipolar transistor 211 of the low-voltage power chip 22 is connected to the fast recovery diode 212, the fast recovery diode 212 is connected to the low-voltage power pin 24, and the low-voltage power pin 24 is connected to an external related device;

[0033] Determine whether the difference between the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40 is within a first preset range;

[0034] When it is determined that the difference between the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40 is within the first preset range, the high-voltage output pad of the high-voltage driver chip 10 is electrically connected to the gate pad on the insulated gate bipolar transistor 211 of the high-voltage power chip 21, the voltage source pad of the high-voltage driver chip 10 is electrically connected to the emitter pad on the insulated gate bipolar transistor 211 of the high-voltage power chip 21, the emitter pad of the insulated gate bipolar transistor 211 of the high-voltage power chip 21 is electrically connected to the fast recovery diode 212 of the high-voltage power chip 21, and the fast recovery diode 212 of the high-voltage power chip 21 is electrically connected to the high-voltage power pin 23;

[0035] When it is determined that the difference between the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40 exceeds the first preset range, the high-voltage output pad of the high-voltage driver chip 10 is electrically connected to the gate pad on the insulated gate bipolar transistor 211 of the high-voltage power chip 21, the emitter pad on the insulated gate bipolar transistor 211 of the high-voltage power chip 21 is electrically connected to the fast recovery diode 212 of the high-voltage power chip 21, the fast recovery diode 212 of the high-voltage power chip 21 is electrically connected to the high-voltage power pin 23, the first jumper area 25 is selectively electrically connected to the fast recovery diode 212 of the high-voltage power chip 21 or one of the high-voltage power pins 23, the first jumper area 25 is electrically connected to the second jumper area 26, and the second jumper area 26 is electrically connected to the voltage source pad of the high-voltage driver chip 10.

[0036] It should be noted that when the current between the high-voltage driver chip 10 and the high-voltage power chip 21 in the intelligent power module 100 is smaller, the switching speed of the insulated gate bipolar transistor 211 in the high-voltage power chip 21 is faster, which will cause the insulated gate bipolar transistor 211 in the high-voltage power chip 21 to have a relatively large peak voltage when it is turned off. Since the switching loss of the insulated gate bipolar transistor 211 in the high-voltage power chip 21 is proportional to the current level, the switching loss of the insulated gate bipolar transistor 211 in the high-voltage power chip 21 is relatively small. At this time, it is necessary to balance the switching loss of the insulated gate bipolar transistor 211 in the high-voltage power chip 21 and the peak voltage of the insulated gate bipolar transistor 211 when it is turned off. Therefore, it can be increased by By increasing the length of the electrical connection line between the high-voltage driver chip 10 and the high-voltage power chip 21 in the intelligent power module 100, the gate-emitter inductance of the high-voltage power chip 21 is increased, thereby reducing the switching speed of the insulated gate bipolar transistor 211 of the high-voltage power chip 21, and further reducing the peak voltage of the insulated gate bipolar transistor 211 of the high-voltage power chip 21. Although this reduces the switching speed of the insulated gate bipolar transistor 211 of the high-voltage power chip 21, thereby increasing the switching loss of the insulated gate bipolar transistor 211 of the high-voltage power chip 21, since the switching loss of the insulated gate bipolar transistor 211 of the high-voltage power chip 21 is relatively small at low current, both the switching loss and the peak voltage can be within a relatively optimal range.

[0037] Similarly, it can be known that when the current between the high-voltage driving chip 10 and the high-voltage power chip 21 in the intelligent power module 100 is larger, the switching speed of the insulated gate bipolar transistor 211 in the high-voltage power chip 21 is slower, which will cause the insulated gate bipolar transistor 211 in the high-voltage power chip 21 to have a relatively small peak voltage when it is turned off. Since the switching loss of the insulated gate bipolar transistor 211 in the high-voltage power chip 21 is proportional to the current level, the switching loss of the insulated gate bipolar transistor 211 in the high-voltage power chip 21 is relatively large. At this time, it is necessary to balance the switching loss of the insulated gate bipolar transistor 211 in the high-voltage power chip 21 and the peak voltage of the insulated gate bipolar transistor 211 when it is turned off. Therefore, it can be reduced. The length of the electrical connection line between the high-voltage driving chip 10 and the high-voltage power chip 21 in the intelligent power module 100 is reduced to reduce the gate-emitter inductance of the high-voltage power chip 21, thereby increasing the switching speed of the insulated gate bipolar transistor 211 of the high-voltage power chip 21, and further increasing the peak voltage of the insulated gate bipolar transistor 211 of the high-voltage power chip 21. Although this increases the switching speed of the insulated gate bipolar transistor 211 of the high-voltage power chip 21 and reduces the switching loss of the insulated gate bipolar transistor 211 of the high-voltage power chip 21, the switching loss of the insulated gate bipolar transistor 211 of the high-voltage power chip 21 is relatively large at high currents, so that both the switching loss and the peak voltage are within a relatively optimal range.

[0038] Therefore, it can be understood that in the process of production and manufacturing, the length of the electrical connection line between the high-voltage driver chip 10 and the high-voltage power chip 21 in the intelligent power module 100 can be changed by selectively setting the electrical connection relationship between the first jumper area 25, the second jumper area 26, the fast recovery diode 212, the high-voltage power pin 23, the voltage source pin and the emitter pad on the insulated gate bipolar transistor 211, thereby changing the size of the gate-emitter inductance of the high-voltage power chip 21, thereby balancing the relationship between the switching loss of the insulated gate bipolar transistor 211 in the high-voltage power chip 21 and the peak voltage of the insulated gate bipolar transistor 211 when it is turned off when different current specifications are met, so that the switching loss of the insulated gate bipolar transistor 211 in the high-voltage power chip 21 and the peak voltage of the insulated gate bipolar transistor 211 when it is turned off are both within a better range.

[0039] In the embodiment of the present invention, by detecting the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40, and by judging the difference between the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40, the current magnitude range and the switching speed range of the insulated gate bipolar transistor 211 in the upper bridge 30 can be known, so as to adjust the electrical connection path between the high-voltage driver chip 10 and the high-voltage power chip 21 in the upper bridge 30, so as to balance the switching loss and the peak voltage, so that both the switching loss and the peak voltage are within a relatively optimal range.

[0040] Combination Figure 1 and Figure 2 As shown, when it is determined that the difference between the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40 is within the first preset range, the high-voltage output pad of the high-voltage driver chip 10 is electrically connected to the gate pad on the insulated gate bipolar transistor 211 of the high-voltage power chip 21, the voltage source pad of the high-voltage driver chip 10 is electrically connected to the emitter pad on the insulated gate bipolar transistor 211 of the high-voltage power chip 21, the emitter pad of the insulated gate bipolar transistor 211 of the high-voltage power chip 21 is electrically connected to the fast recovery diode 212 of the high-voltage power chip 21, and the high-voltage power chip 21 is electrically connected to the high-voltage power chip 21. The fast recovery diode 212 of 21 is electrically connected to the high-voltage power pin 23. The electrical connection method between the high-voltage driver chip 10 and the high-voltage power chip 21 in this embodiment is suitable for situations with larger current specifications. In this embodiment, the length of the electrical connection line between the high-voltage driver chip 10 and the high-voltage power chip 21 in the intelligent power module 100 is relatively short, which can reduce the gate-emitter inductance of the high-voltage power chip 21, thereby increasing the switching speed of the insulated gate bipolar transistor 211 of the high-voltage power chip 21, thereby increasing the peak voltage of the insulated gate bipolar transistor 211 of the high-voltage power chip 21, and both the switching loss and the peak voltage can be within a relatively optimal range.

[0041] Combination Figure 1 and Figure 3As shown, when it is determined that the difference between the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40 exceeds the first preset range and is within the second preset range, the high-voltage output pad of the high-voltage driver chip 10 is electrically connected to the gate pad on the insulated gate bipolar transistor 211 of the high-voltage power chip 21, the emitter pad on the insulated gate bipolar transistor 211 of the high-voltage power chip 21 is electrically connected to the fast recovery diode 212 of the high-voltage power chip 21, the fast recovery diode 212 of the high-voltage power chip 21 is electrically connected to the high-voltage power pin 23, and the first The jumper area 25 is electrically connected to the fast recovery diode 212 of the high-voltage power chip 21, the first jumper area 25 and the second jumper area 26 are electrically connected, and the second jumper area 26 is electrically connected to the voltage source pad of the high-voltage driver chip 10. The electrical connection method between the high-voltage driver chip 10 and the high-voltage power chip 21 in this embodiment is suitable for the case where the current specification is moderate. The length of the electrical connection line between the high-voltage driver chip 10 and the high-voltage power chip 21 in the intelligent power module 100 in this embodiment is moderate, so that the switching loss and the peak voltage will not be too large or too small, and both the switching loss and the peak voltage can be within a relatively optimal range.

[0042] Combination Figure 1 and Figure 4 As shown, when it is determined that the difference between the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40 exceeds the second preset range, the high-voltage output pad of the high-voltage driver chip 10 is electrically connected to the gate pad on the insulated gate bipolar transistor 211 of the high-voltage power chip 21, the emitter pad on the insulated gate bipolar transistor 211 of the high-voltage power chip 21 is electrically connected to the fast recovery diode 212 of the high-voltage power chip 21, the fast recovery diode 212 of the high-voltage power chip 21 is electrically connected to the high-voltage power pin 23, the first jumper area 25 is electrically connected to the high-voltage power pin 23, and the first jumper area 25 and the second jumper area 25 are electrically connected. The line area 26 is electrically connected to the second jumper area 26 and the voltage source pad of the high-voltage driver chip 10. The electrical connection method between the high-voltage driver chip 10 and the high-voltage power chip 21 in this embodiment is suitable for the case of smaller current specifications. In this embodiment, the length of the electrical connection line between the high-voltage driver chip 10 and the high-voltage power chip 21 in the intelligent power module 100 is relatively long, which can increase the gate-emitter inductance of the high-voltage power chip 21, thereby reducing the switching speed of the insulated gate bipolar transistor 211 of the high-voltage power chip 21, thereby reducing the peak voltage of the insulated gate bipolar transistor 211 of the high-voltage power chip 21, and both the switching loss and the peak voltage can be within a relatively good range.

[0043] It should be noted that in some embodiments of the present invention, the low-voltage driver chip 11 can be one, the high-voltage driver chip 10 can be one or three, and there are three high-voltage power chips 21, low-voltage power chips 22, high-voltage power pins 23, low-voltage power pins 24, first jumper areas 25 and second jumper areas 26.

[0044] In some other embodiments of the present invention, the driving side has only one driving side chip, and in this case, the one driving side chip is electrically connected to the high-voltage power chip 21 and the low-voltage power chip 22 respectively.

[0045] Furthermore, the first preset range is set to T1, T1 satisfies the relationship: T1<400MA / s, and the second preset range is set to T2, T2 satisfies the relationship: 400MA / s≤T2<800MA / s. In this way, the first preset range and the second preset range can be made more reasonable, and the change in the electrical connection method between the high-voltage driver chip 10 and the high-voltage power chip 21 in the upper bridge 30 can be made more accurate, which can improve the reliability of the control method of the intelligent power module 100.

[0046] In some embodiments of the present invention, the current between the low voltage driver chip 11 and the low voltage power chip 22 in the lower bridge 40 is constant. When it is determined that the difference between the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40 is within the first preset range, the current between the low voltage driver chip 11 and the low voltage power chip 22 in the upper bridge 30 is set to I1, and I1 satisfies the relationship: 30A<I1≤50A. Specifically, setting the current between the high voltage driver chip 10 and the high voltage power chip 21 within a reasonable and larger range can further optimize the balance between the switching loss and the peak voltage, thereby further optimizing the performance of the intelligent power module 100.

[0047] In some embodiments of the present invention, the current between the low voltage driver chip 11 and the low voltage power chip 22 in the lower bridge 40 is constant. When it is determined that the difference between the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40 exceeds the first preset range and is within the second preset range, the current between the low voltage driver chip 11 and the low voltage power chip 22 in the upper bridge 30 is set to I2, and I2 satisfies the relationship: 20A≤I2<30A. Specifically, setting the current between the high voltage driver chip 10 and the high voltage power chip 21 within a reasonable and moderate range can further optimize the balance between the switching loss and the peak voltage, thereby further optimizing the performance of the intelligent power module 100.

[0048] In some embodiments of the present invention, the current between the low voltage driver chip 11 and the low voltage power chip 22 in the lower bridge 40 is constant. When it is determined that the difference between the current change rate of the insulated gate bipolar transistor 211 in the upper bridge 30 and the current change rate of the insulated gate bipolar transistor 211 in the lower bridge 40 exceeds the second preset range, the current between the low voltage driver chip 11 and the low voltage power chip 22 in the upper bridge 30 is set to I3, and I3 satisfies the relationship: I3<20A. Specifically, setting the current between the high voltage driver chip 10 and the high voltage power chip 21 within a reasonable smaller range can further optimize the balance between the switching loss and the peak voltage, thereby further optimizing the performance of the intelligent power module 100.

[0049] The intelligent power module 100 according to the present invention can be applied to the control method of the intelligent power module 100 described above, so that the performance of the intelligent power module 100 can be better.

[0050] The electronic device according to the present invention may mainly include: the above-mentioned intelligent power module 100. Applying the above-mentioned intelligent power module 100 to the electronic device can improve the versatility of the electronic device.

[0051] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0052] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0053] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A control method for an intelligent power module, characterized in that: include: Detecting the current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30); wherein the upper bridge (30) comprises a high-voltage drive chip (10), a high-voltage power chip (21) and a high-voltage power pin (23) which are sequentially arranged at intervals in the second direction, the high-voltage power chip (21) comprises an insulated gate bipolar transistor (211) and a fast recovery diode (212) which are arranged at intervals in the second direction, the high-voltage power chip (21) is arranged on the power-side substrate (20), and a first jumper area (25) and a second jumper area (26) are also arranged on the power-side substrate (20); Detecting the current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40); wherein the lower bridge (40) comprises a low-voltage drive chip (11), a low-voltage power chip (22) and a low-voltage power pin (24) which are sequentially arranged at intervals in the second direction, the upper bridge (30) and the lower bridge (40) are arranged at intervals in the first direction, the low-voltage power chip (22) comprises an insulated gate bipolar transistor (211) and a fast recovery diode (212) which are arranged at intervals in the second direction, the low-voltage output pad of the low-voltage drive chip (11) is connected to the gate pad of the insulated gate bipolar transistor (211) of the low-voltage power chip (22), the emitter pad of the insulated gate bipolar transistor (211) of the low-voltage power chip (22) is connected to the fast recovery diode (212), the fast recovery diode (212) is connected to the low-voltage power pin (24), and the low-voltage power pin (24) is connected to an external related device; Determining whether a difference between a current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and a current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) is within a first preset range; When it is determined that the difference between the current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and the current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) is within a first preset range, the high-voltage output pad of the high-voltage driver chip (10) is electrically connected to the gate pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21), the voltage source pad of the high-voltage driver chip (10) is electrically connected to the emitter pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21), the emitter pad of the insulated gate bipolar transistor (211) of the high-voltage power chip (21) is electrically connected to the fast recovery diode (212) of the high-voltage power chip (21), and the fast recovery diode (212) of the high-voltage power chip (21) is electrically connected to the high-voltage power pin (23); When it is determined that the difference between the current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and the current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) exceeds a first preset range, the high-voltage output pad of the high-voltage driver chip (10) is electrically connected to the gate pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21), and the emitter pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21) is electrically connected to the emitter pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21). 1), the fast recovery diode (212) of the high-voltage power chip (21) is electrically connected to the high-voltage power pin (23), the first jumper area (25) is selectively electrically connected to the fast recovery diode (212) of the high-voltage power chip (21) or one of the high-voltage power pins (23), the first jumper area (25) is electrically connected to the second jumper area (26), and the second jumper area (26) is electrically connected to the voltage source pad of the high-voltage driver chip (10).

2. The control method of the intelligent power module according to claim 1, characterized in that: After the step of determining that the difference between the current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and the current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) exceeds a first preset range, the method further comprises: Determining whether a difference between a current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and a current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) is within a second preset range, wherein the second preset range is greater than the first preset range; When it is determined that the difference between the current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and the current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) is within a second preset range, the high-voltage output pad of the high-voltage driver chip (10) is electrically connected to the gate pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21), and the emitter pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21) is electrically connected to the emitter pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21). The fast recovery diode (212) of the high-voltage power chip (21) is electrically connected, the fast recovery diode (212) of the high-voltage power chip (21) is electrically connected to the high-voltage power pin (23), the first jumper area (25) is electrically connected to the fast recovery diode (212) of the high-voltage power chip (21), the first jumper area (25) and the second jumper area (26) are electrically connected, and the second jumper area (26) is electrically connected to the voltage source pad of the high-voltage driver chip (10).

3. The control method of the intelligent power module according to claim 2, characterized in that: The step of judging whether the difference between the current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and the current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) is within a second preset range further comprises: When it is determined that the difference between the current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and the current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) exceeds a second preset range, the high-voltage output pad of the high-voltage driver chip (10) is electrically connected to the gate pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21), and the gate pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21) is electrically connected to the gate pad on the insulated gate bipolar transistor (211) of the high-voltage power chip (21). The emitter pad is electrically connected to the fast recovery diode (212) of the high-voltage power chip (21), the fast recovery diode (212) of the high-voltage power chip (21) is electrically connected to the high-voltage power pin (23), the first jumper area (25) is electrically connected to the high-voltage power pin (23), the first jumper area (25) and the second jumper area (26) are electrically connected, and the second jumper area (26) is electrically connected to the voltage source pad of the high-voltage driver chip (10).

4. The control method of the intelligent power module according to claim 3, characterized in that: The first preset range is set to T1, and T1 satisfies the relationship: T1<400MA / s.

5. The control method of the intelligent power module according to claim 4, characterized in that: The second preset range is set to T2, and T2 satisfies the relationship: 400MA / s≤T2<800MA / s.

6. The control method of the intelligent power module according to claim 3, characterized in that: The magnitude of the current between the low-voltage driving chip (11) and the low-voltage power chip (22) in the lower bridge (40) is constant, and when it is determined that the difference between the current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and the current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) is within a first preset range, the current between the low-voltage driving chip (11) and the low-voltage power chip (22) in the upper bridge (30) is set to I1, and I1 satisfies the relationship: 30A<I1≤50A.

7. The control method of the intelligent power module according to claim 6, characterized in that: The current between the low-voltage driving chip (11) and the low-voltage power chip (22) in the lower bridge (40) is constant. When it is determined that the difference between the current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and the current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) exceeds a first preset range and is within a second preset range, the current between the low-voltage driving chip (11) and the low-voltage power chip (22) in the upper bridge (30) is set to I2, and I2 satisfies the relationship: 20A≤I2<30A.

8. The control method of the intelligent power module according to claim 7, characterized in that: The current between the low-voltage driving chip (11) and the low-voltage power chip (22) in the lower bridge (40) is constant, and when it is determined that the difference between the current change rate of the insulated gate bipolar transistor (211) in the upper bridge (30) and the current change rate of the insulated gate bipolar transistor (211) in the lower bridge (40) exceeds a second preset range, the current between the low-voltage driving chip (11) and the low-voltage power chip (22) in the upper bridge (30) is set to I3, and I3 satisfies the relationship: I3<20A.

9. An intelligent power module, characterized in that: A control method for an intelligent power module (100) according to any one of claims 1 to 8 is applicable.

10. An electronic device, characterized in that: Comprising the intelligent power module (100) as claimed in claim 9.

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