Epitaxial structure of semiconductor power chip and radio frequency chip

Abstract

The invention discloses an epitaxial structure of a semiconductor power chip and a radio frequency chip, which sequentially comprises a substrate, a channel layer and a barrier layer from bottom to top, and a two-dimensional electron gas layer is formed on the interface of the channel layer and the barrier layer; the rising angle of the valley position of the effective mass of the light hole of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer to the barrier layer direction is alpha, and the rising angle of the valley position of the deformation potential of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer to the barrier layer direction is beta, the descending angle from the peak position of the volume elastic modulus of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer to the direction of the barrier layer is gamma, and the ascending angle from the valley position of the peak rate electric field of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer to the direction of the barrier layer is theta. The current density and the breakdown field strength of the GaN power device are improved, the capacitance and the resistance of the device are reduced, and the voltage withstanding characteristic of the power device is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to an epitaxial structure of a semiconductor power chip and a radio frequency chip. Background Art

[0002] GaN power devices and RF devices have many advantages, such as large bandgap, large critical breakdown electric field, small size, high frequency, high electron density, high electron saturation drift rate, high critical electric field, high thermal conductivity, high voltage resistance, and good chemical stability. For example, the bandgap of GaN is 3.4eV, that of silicon is 1.12eV, and the electron drift rate of GaN is 2.5 times that of Si. GaN power devices are based on a two-dimensional electron gas structure with high electron mobility. They use AlGaN / GaN lattice mismatch to generate stress. Under the interaction of spontaneous polarization and piezoelectric polarization, a large amount of two-dimensional electron gas is generated at the GaN interface. Under undoped conditions, the density of the two-dimensional electron gas can exceed 10 13 cm -2 , can be applied to HEMT high electron mobility transistor devices, or high-voltage power devices, and are widely used in power electronics devices, consumer electronics, data centers, industrial electromechanical, automotive electronics, smart grids, RF devices, 5G / 6G communications, photovoltaic inverters, new energy vehicles and other fields.

[0003] GaN-HEMT power devices are divided into E-mode HEMT enhancement-mode devices and D-mode depletion-mode devices. E-mode HEMT enhancement-mode devices have the advantages of high speed, high power, high electron mobility, and high breakdown voltage. They are mainly used in GaN RF, 5G / 6G small base station RF front-end, wireless communication, lidar and other fields. D-mode depletion-mode devices have the advantages of low leakage current and simple driving circuit. They are mainly used in AC-DC conversion, DC-DC conversion and other fields.

[0004] GaN power devices and RF devices have the following problems: defects and lattice mismatch stress will produce leakage channels, causing performance failure and breakdown characteristics, leading to reliability failure; unbalanced carriers will vibrate the off-state electric field, resulting in electric field concentration; poor heat dissipation characteristics will affect reliability; Schottky gate depletion-type GaN high electron mobility devices often face problems such as high gate leakage and low switching current ratio, causing the gate breakdown voltage to drop, and then resulting in high power consumption, gate leakage and device failure. Summary of the invention

[0005] The present invention proposes an epitaxial structure of a semiconductor power chip and a radio frequency chip, which improves the current density and breakdown field strength of a GaN power device, reduces device capacitance and device resistance, improves the withstand voltage characteristics of the power device, and suppresses reverse breakdown of the GaN power device at the moment of turning on.

[0006] The present invention provides an epitaxial structure of a semiconductor power chip and a radio frequency chip, which comprises, from bottom to top, a substrate, a channel layer and a barrier layer in sequence, wherein a two-dimensional electron gas layer is formed at an interface between the channel layer and the barrier layer; the valley position of the light hole effective mass of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a rising angle of α toward the barrier layer, the valley position of the deformation potential of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a rising angle of β toward the barrier layer, the peak position of the volume elastic modulus of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a decreasing angle of γ toward the barrier layer, the valley position of the peak rate electric field of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a rising angle of θ toward the barrier layer, and 10°≤γ≤β≤α≤θ≤90°.

[0007] Preferably, the peak position of the Phillips ionization degree of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a descending angle of δ toward the barrier layer, the valley position of the thermal conductivity of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a rising angle of φ toward the barrier layer, the peak position of the conduction band effective state density of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a descending angle of μ toward the barrier layer, the peak position of the thermal expansion coefficient of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a descending angle of υ toward the barrier layer, and the peak position of the elastic coefficient of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a descending angle of ω toward the barrier layer, 5°≤ω≤δ≤υ≤φ≤μ≤90°.

[0008] Preferably, the light hole effective mass, deformation potential, thermal conductivity, and the rising angle of the valley position of the peak rate electric field of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer toward the barrier layer, and the Philips ionization degree, conduction band effective state density, volume elastic modulus, thermal expansion coefficient, and the descending angle of the peak position of the elastic coefficient of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer toward the barrier layer have the following relationship: 10°≤γ≤ω≤δ≤β≤υ≤α≤φ≤μ≤θ≤90°.

[0009] Preferably, the light hole effective mass distribution of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a function y=A+B*e x lnx curve distribution; the deformation potential distribution of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer has a function y=C+x-1 / 2x curve distribution; the thermal conductivity distribution of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer has a function y=D+e x -e -x Curve distribution; the peak rate electric field distribution of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a function y=E+F*x 2 / sinx curve distribution; where A, B, C, D, E, and F are arbitrary values, and A≤D≤C≤E.

[0010] Preferably, the Philips ionization degree distribution of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a function y=G+x 2 -H*e x Curve distribution; the conduction band effective state density distribution of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer has a function y=J+K*e x / lnx fourth quadrant curve distribution; the volume elastic modulus distribution of the two-dimensional electron gas layer at the interface between the channel layer and the barrier layer has a function y=L+M*e x / x fourth quadrant curve distribution; the thermal expansion coefficient distribution of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer has a function y=N+P*x / lnx fourth quadrant curve distribution; the elastic coefficient distribution of the two-dimensional electron gas layer at the interface of the channel layer and the barrier layer has a function y=Q+R*sinx / x 2 The third quadrant curve distribution; among them, G, H, J, K, L, M, N, P, Q, and R are arbitrary values, and G≤N≤L≤Q≤J.

[0011] Preferably, the two-dimensional electron gas layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond;

[0012] The channel layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 angstroms;

[0013] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 angstroms.

[0014] Preferably, a buffer layer and / or a first conductive type nitride semiconductor may be provided between the substrate and the channel layer; and a second conductive type nitride semiconductor and / or a nitride contact layer may also be provided above the barrier layer.

[0015] Preferably, the buffer layer, the first conductive nitride semiconductor, the second conductive nitride semiconductor, and the nitride contact layer are any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the buffer layer is 5 to 60,000 angstroms; the thickness of the first conductive nitride semiconductor is 5 to 90,000 angstroms; the thickness of the second conductive nitride semiconductor is 10 to 40,000 angstroms; and the thickness of the nitride contact layer is 5 to 500 angstroms.

[0016] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, Cu, W, TiW, Mo, diamond, Ga2O3, AlN, GaN, GaAs, GaSb, InSb, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, MgO, spinel, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0017] Compared with the prior art, the epitaxial structure of a semiconductor power chip and a radio frequency chip provided by the embodiments of the present invention has the following beneficial effects: the present invention modulates the interface change trend of the light hole effective mass, the interface change trend of the peak rate electric field, the interface change trend of the Philips ionization degree, and the interface change trend of the conduction band effective state density at the interface between the channel layer and the barrier layer, thereby improving the current density and breakdown field strength of the GaN power device, reducing the device capacitance and the device resistance, improving the withstand voltage characteristics of the power device, and suppressing the reverse breakdown of the GaN power device at the moment of turning on.

[0018] At the same time, the deformation potential interface change trend, thermal conductivity change trend, volume elastic modulus interface change trend, thermal expansion coefficient interface change trend, elastic coefficient interface change trend of the interface between the channel layer and the barrier layer are modulated to control the structural strain and thermal stress of the interface, reduce the defect and dislocation density of the interface, inhibit the electrons in the two-dimensional electron gas channel from being captured by defects, improve the dynamic characteristics, linearity and operating frequency of the power device, reduce the drain-source overshoot voltage, and improve the gate-source voltage stability and high-frequency operating stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic structural diagram of a first embodiment of an epitaxial structure of a semiconductor power chip and a radio frequency chip according to an embodiment of the present invention;

[0020] Figure 2 This is a schematic structural diagram of a second embodiment of an epitaxial structure of a semiconductor power chip and a radio frequency chip according to an embodiment of the present invention;

[0021] Figure 3 This is a schematic structural diagram of a third embodiment of an epitaxial structure of a semiconductor power chip and a radio frequency chip according to an embodiment of the present invention;

[0022] Figure 4 This is a schematic structural diagram of a fourth embodiment of an epitaxial structure of a semiconductor power chip and a radio frequency chip according to an embodiment of the present invention;

[0023] Reference numerals: 100: substrate; 101: channel layer, 102: barrier layer; 103: buffer layer; 104: first conductivity type nitride semiconductor, 105: second conductivity type nitride semiconductor, 106: nitride contact layer. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In order to solve the above problems, the epitaxial structure of a semiconductor power chip and a radio frequency chip provided in the embodiments of the present application will be introduced and explained in detail through the following specific embodiments.

[0026] Reference Figure 1 The present invention provides an epitaxial structure of a semiconductor power chip and a radio frequency chip, which comprises, from bottom to top, a substrate 100, a channel layer 101 and a barrier layer 102, wherein a two-dimensional electron gas layer is formed at an interface between the channel layer 101 and the barrier layer 102; the valley position of the light hole effective mass of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a rising angle of α toward the barrier layer, the valley position of the deformation potential of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a rising angle of β toward the barrier layer 102, the peak position of the volume elastic modulus of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a decreasing angle of γ toward the barrier layer 102, the valley position of the peak rate electric field of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a rising angle of θ toward the barrier layer 102, and 10°≤γ≤β≤α≤θ≤90°.

[0027] The peak position of the Phillips ionization degree of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a decreasing angle of δ toward the barrier layer 102, the valley position of the thermal conductivity of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a rising angle of φ toward the barrier layer 102, the peak position of the conduction band effective state density of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a decreasing angle of μ toward the barrier layer 102, the peak position of the thermal expansion coefficient of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a decreasing angle of υ toward the barrier layer 102, and the peak position of the elastic coefficient of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a decreasing angle of ω toward the barrier layer 102, 5°≤ω≤δ≤υ≤φ≤μ≤90°.

[0028] The light hole effective mass, deformation potential, thermal conductivity, and the rising angle of the valley position of the peak rate electric field of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 toward the barrier layer 102, and the Philips ionization degree, conduction band effective state density, bulk elastic modulus, thermal expansion coefficient, and the descending angle of the peak position of the elastic coefficient of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 toward the barrier layer 102 have the following relationship: 10°≤γ≤ω≤δ≤β≤υ≤α≤φ≤μ≤θ≤90°.

[0029] The light hole effective mass distribution of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a function y=A+B*e xlnx curve distribution; the deformation potential distribution of the two-dimensional electron gas layer at the interface of the channel layer 101 and the barrier layer 102 has a function y=C+x-1 / 2x curve distribution; the thermal conductivity distribution of the two-dimensional electron gas layer at the interface of the channel layer 101 and the barrier layer 102 has a function y=D+e x -e -x Curve distribution; The peak rate electric field distribution of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a function y=E+F*x 2 / sinx curve distribution; where A, B, C, D, E, and F are arbitrary values, and A≤D≤C≤E.

[0030] The Philips ionization degree distribution of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a function y=G+x 2 -H*e x Curve distribution; the conduction band effective state density distribution of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a function y=J+K*e x / lnx fourth quadrant curve distribution; the volume elastic modulus distribution of the two-dimensional electron gas layer at the interface between the channel layer 101 and the barrier layer 102 has a function y=L+M*e x / x fourth quadrant curve distribution; the thermal expansion coefficient distribution of the two-dimensional electron gas layer at the interface of the channel layer 101 and the barrier layer 102 has a function y=N+P*x / lnx fourth quadrant curve distribution; the elastic coefficient distribution of the two-dimensional electron gas layer at the interface of the channel layer 101 and the barrier layer 102 has a function y=Q+R*sinx / x 2 The third quadrant curve distribution; among them, G, H, J, K, L, M, N, P, Q, and R are arbitrary values, and G≤N≤L≤Q≤J.

[0031] The present invention modulates the interface variation trend of the light hole effective mass, the interface variation trend of the peak rate electric field, the interface variation trend of the Philips ionization degree, and the interface variation trend of the conduction band effective state density at the interface between the channel layer 101 and the barrier layer 102, thereby improving the current density and the breakdown field strength of the GaN power device, reducing the device capacitance and the device resistance, improving the withstand voltage characteristics of the power device, suppressing the reverse breakdown of the GaN power device at the moment of turning on, and improving the withstand voltage performance from 200 to 650 V to 650 to 8000 V.

[0032] At the same time, the deformation potential interface change trend, thermal conductivity change trend, volume elastic modulus interface change trend, thermal expansion coefficient interface change trend, elastic coefficient interface change trend of the interface between the channel layer 101 and the barrier layer 102 are modulated to control the structural strain and thermal stress of the interface, reduce the defect and dislocation density of the interface, inhibit the electrons in the two-dimensional electron gas channel from being captured by defects, improve the dynamic characteristics, linearity and operating frequency of the power device, reduce the drain-source overshoot voltage and improve the gate-source voltage stability and high-frequency working stability, improve the long-term aging leakage and dead light of the power device, and the aging leakage is reduced from + / -0.5~5uA to 0~+ / -0.5uA, and the aging dead light ratio is reduced from 100~800PPM to 5~20PPM.

[0033] In the present invention, the two-dimensional electron gas layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond;

[0034] The channel layer 101 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 angstroms;

[0035] The barrier layer 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 angstroms.

[0036] Reference Figure 1-4In the present invention, a buffer layer 103 and / or a first conductive type nitride semiconductor 104 may be provided between the substrate 100 and the channel layer 101 ; a second conductive type nitride semiconductor 105 and / or a nitride contact layer 106 may also be provided above the barrier layer 102 .

[0037] In the present invention, the buffer layer 103, the first conductive type nitride semiconductor 104, the second conductive type nitride semiconductor 105, and the nitride contact layer 106 are GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs , any one or any combination of AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the buffer layer 103 is 5 to 60,000 angstroms; the thickness of the first conductive nitride semiconductor 104 is 5 to 90,000 angstroms; the thickness of the second conductive nitride semiconductor 105 is 10 to 40,000 angstroms; the thickness of the nitride contact layer 106 is 5 to 500 angstroms.

[0038] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, Cu, W, TiW, Mo, diamond, Ga2O3, AlN, GaN, GaAs, GaSb, InSb, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, MgO, spinel, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0039] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. An epitaxial structure of a semiconductor power chip and a radio frequency chip, comprising, from bottom to top, a substrate (100), a channel layer (101) and a barrier layer (102), characterized in that: A two-dimensional electron gas layer is formed at the interface between the channel layer (101) and the barrier layer (102); the valley position of the light hole effective mass of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) has a rising angle of α in the direction of the barrier layer, the valley position of the deformation potential of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) has a rising angle of β in the direction of the barrier layer (102), the peak position of the volume elastic modulus of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) has a decreasing angle of γ in the direction of the barrier layer (102), the valley position of the peak rate electric field of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) has a rising angle of θ in the direction of the barrier layer (102), and 10°≤γ≤β≤α≤θ≤90°.

2. The epitaxial structure of a semiconductor power chip and a radio frequency chip according to claim 1, characterized in that: The peak position of the Philips ionization degree of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) has a descending angle of δ in the direction of the barrier layer (102), the valley position of the thermal conductivity of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) has a rising angle of φ in the direction of the barrier layer (102), and the peak value of the conduction band effective state density of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) has a descending angle of δ in the direction of the barrier layer (102). The angle at which the value position decreases toward the barrier layer (102) is μ, the angle at which the peak position of the thermal expansion coefficient of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) decreases toward the barrier layer (102) is υ, and the angle at which the peak position of the elastic coefficient of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) decreases toward the barrier layer (102) is ω, 5°≤ω≤δ≤υ≤φ≤μ≤90°.

3. The epitaxial structure of a semiconductor power chip and a radio frequency chip according to claim 2, characterized in that: The light hole effective mass, deformation potential, thermal conductivity, and the rising angle of the valley position of the peak rate electric field of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) toward the barrier layer (102), and the Philips ionization degree, conduction band effective state density, bulk elastic modulus, thermal expansion coefficient, and the falling angle of the peak position of the elastic coefficient of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) toward the barrier layer (102) have the following relationship: 10°≤γ≤ω≤δ≤β≤υ≤α≤φ≤μ≤θ≤90°.

4. The epitaxial structure of a semiconductor power chip and a radio frequency chip according to claim 1, characterized in that: The light hole effective mass distribution of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) has a function y=A+B*e x lnx curve distribution; the deformation potential distribution of the two-dimensional electron gas layer at the interface of the channel layer (101) and the barrier layer (102) has a function y=C+x-1 / 2x curve distribution; the thermal conductivity distribution of the two-dimensional electron gas layer at the interface of the channel layer (101) and the barrier layer (102) has a function y=D+e x -e -x Curve distribution; the peak rate electric field distribution of the two-dimensional electron gas layer at the interface of the channel layer (101) and the barrier layer (102) has a function y=E+F*x 2 / sinx curve distribution; where A, B, C, D, E, and F are arbitrary values, and A≤D≤C≤E.

5. The epitaxial structure of a semiconductor power chip and a radio frequency chip according to claim 1, characterized in that: The Philips ionization distribution of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) has a function y=G+x 2 -H*e x Curve distribution; the conduction band effective state density distribution of the two-dimensional electron gas layer at the interface of the channel layer (101) and the barrier layer (102) has a function y=J+K*e x / lnx fourth quadrant curve distribution; the volume elastic modulus distribution of the two-dimensional electron gas layer at the interface between the channel layer (101) and the barrier layer (102) has a function y=L+M*e x / x fourth quadrant curve distribution; the thermal expansion coefficient distribution of the two-dimensional electron gas layer at the interface of the channel layer (101) and the barrier layer (102) has a function y=N+P*x / lnx fourth quadrant curve distribution; the elastic coefficient distribution of the two-dimensional electron gas layer at the interface of the channel layer (101) and the barrier layer (102) has a function y=Q+R*sinx / x 2 The third quadrant curve distribution; among them, G, H, J, K, L, M, N, P, Q, and R are arbitrary values, and G≤N≤L≤Q≤J.

6. The epitaxial structure of a semiconductor power chip and a radio frequency chip according to claim 1, characterized in that: The two-dimensional electron gas layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; The channel layer (101) is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 angstroms; The barrier layer (102) is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 to 50,000 angstroms.

7. The epitaxial structure of a semiconductor power chip and a radio frequency chip according to claim 1, characterized in that: A buffer layer (103) and / or a first conductive type nitride semiconductor (104) may be provided between the substrate (100) and the channel layer (101); and a second conductive type nitride semiconductor (105) and / or a nitride contact layer (106) may also be provided above the barrier layer (102).

8. The epitaxial structure of a semiconductor power chip and a radio frequency chip according to claim 1, characterized in that: The buffer layer (103), the first conductive type nitride semiconductor (104), the second conductive type nitride semiconductor (105), and the nitride contact layer (106) are GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, Al Any one or any combination of GaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the buffer layer (103) is 5 to 60,000 angstroms; the thickness of the first conductive nitride semiconductor (104) is 5 to 90,000 angstroms; the thickness of the second conductive nitride semiconductor (105) is 10 to 40,000 angstroms; the thickness of the nitride contact layer (106) is 5 to 500 angstroms.

9. The epitaxial structure of a semiconductor power chip and a radio frequency chip according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, Cu, W, TiW, Mo, diamond, Ga2O3, AlN, GaN, GaAs, GaSb, InSb, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, MgO, spinel, ZrB2, LiAlO2 and LiGaO2 composite substrates.

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