Substrate processing apparatus and substrate processing method

Abstract

The substrate processing apparatus includes: a substrate suction unit that sucks a substrate; a supply unit that supplies a fluid to the inside of the substrate adsorption unit; a suction unit that sucks a fluid from the inside of the substrate suction unit; a first transport unit that holds the substrate from a side opposite to the substrate suction unit; and a control unit that controls the supply unit, the suction unit, and the first conveyance unit. The control unit performs the following control: the substrate adsorbed by the substrate adsorption unit is held by the first conveying unit from a side opposite to the substrate adsorption unit; a liquid supply unit for supplying a liquid to the inside of the substrate adsorption unit; moving the first conveying part by a set distance so as to separate the substrate from the substrate adsorption part by the set distance; and sucking the liquid remaining between the substrate adsorption part and the substrate into the substrate adsorption part in a state in which the substrate is separated from the substrate adsorption part by a set distance.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a substrate processing method. Background Art

[0002] The substrate grinding system described in Patent Document 1 includes: a grinding device that grinds a substrate; and a cleaning device that cleans the substrate after being ground by the grinding device. The grinding device has a holding plate for adsorbing and holding the substrate. The substrate is ground while being adsorbed and held on the holding plate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Utility Model Publication No. 3227448 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] One aspect of the present disclosure provides a technology for supplying liquid into a substrate adsorption unit such as a holding disk, and reducing the amount of liquid remaining on a surface of the substrate facing the substrate adsorption unit after the substrate is removed from the substrate adsorption unit by the pressure of the liquid.

[0008] Solutions for solving problems

[0009] A substrate processing device according to one embodiment of the present disclosure includes: a substrate adsorption unit that adsorbs a substrate; a supply unit that supplies a fluid to the interior of the substrate adsorption unit; a suction unit that sucks the fluid from the interior of the substrate adsorption unit; a first conveying unit that holds the substrate from the side opposite to the substrate adsorption unit; and a control unit that controls the supply unit, the suction unit, and the first conveying unit. The control unit performs the following control: holding the substrate adsorbed by the substrate adsorption unit from the side opposite to the substrate adsorption unit by the first conveying unit; supplying liquid to the interior of the substrate adsorption unit; moving the first conveying unit a set distance to separate the substrate from the substrate adsorption unit by a set distance; and sucking the liquid remaining between the substrate adsorption unit and the substrate into the interior of the substrate adsorption unit when the substrate is separated from the substrate adsorption unit by a set distance.

[0010] Effects of the Invention

[0011] According to one aspect of the present disclosure, the amount of liquid remaining on the surface of the substrate facing the substrate adsorption portion can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1It is a top view showing a substrate processing apparatus according to one embodiment.

[0013] Figure 2 It is along Figure 1 The cross-sectional view obtained along the II-II line.

[0014] Figure 3 1 is a flowchart showing a substrate processing method according to one embodiment.

[0015] Figure 4 It is a cross-sectional view showing a substrate holding mechanism according to one embodiment.

[0016] Figure 5 This is a flowchart showing an example of step S102.

[0017] Figure 6 (A) is a cross-sectional view showing an example of step S204, Figure 6 (B) is a cross-sectional view showing an example of step S205, Figure 6 (C) is a cross-sectional view showing an example of step S207, Figure 6 (D) is a cross-sectional view showing an example of the first stage of step S208, Figure 6 (E) is a cross-sectional view showing an example of the second stage of step S208.

[0018] Figure 7 1 is a cross-sectional view showing an example of a cleaning unit, and is a cross-sectional view showing an example of a state in which a substrate is held by a substrate holding unit.

[0019] Figure 8 1 is a cross-sectional view showing an example of a cleaning unit, and is a cross-sectional view showing an example of a state in which a substrate is held by a pair of suction cups.

[0020] Fig. 9 It is a cross-sectional view showing an example of a standby section. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In addition, the same reference numerals are used for the same or corresponding structures in the drawings, and the description is sometimes omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are directions perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0022] First, refer to Figure 1 and Figure 2A substrate processing apparatus 1 according to an embodiment will be described. The substrate processing apparatus 1 processes a substrate W and cleans the processed substrate W. The substrate processing apparatus 1 includes, for example, a loading and unloading block 2, a cleaning block 3, and a processing block 5. The loading and unloading block 2, the cleaning block 3, and the processing block 5 are arranged in the order of the loading and unloading block 2, the cleaning block 3, and the processing block 5 from the negative direction side of the X-axis to the positive direction side of the X-axis.

[0023] The loading and unloading block 2 includes a loading portion 21 for loading a box C. The box C accommodates a plurality of substrates W. The substrate W includes a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. The substrate W may also include a device layer formed on the surface of the semiconductor substrate. The device layer includes, for example, an electronic circuit. The substrate W may also include a glass substrate instead of a semiconductor substrate.

[0024] The cleaning block 3 includes, for example, cleaning units 31A and 31B for cleaning the processed substrate W, etching units 32A and 32B for etching the cleaned substrate W, a turning unit 34 for turning the substrate W, and a conveying unit 35 for transferring the substrate W. In addition, the cleaning block 3 includes a second conveying unit 36 ​​and a third conveying unit 37.

[0025] When viewed from above, the second conveying unit 36 ​​and the third conveying unit 37 are disposed on the diagonal line of the rectangular cleaning block 3. The second conveying unit 36 ​​is adjacent to the processing block 5 and is not adjacent to the loading and unloading block 2. In contrast, the third conveying unit 37 is adjacent to the loading and unloading block 2 and is not adjacent to the processing block 5.

[0026] The second conveyor 36 conveys the substrate W between a plurality of devices adjacent to the second conveyor 36. The second conveyor 36 includes a conveyor arm that holds the substrate W. The conveyor arm is movable in the horizontal direction (two directions of the X-axis direction and the Y-axis direction) and the vertical direction, and is rotatable around the vertical axis.

[0027] The third conveyor 37 conveys the substrate W between a plurality of devices adjacent to the third conveyor 37. The third conveyor 37 includes a conveyor arm that holds the substrate W. The conveyor arm is movable in the horizontal direction (two directions of the X-axis direction and the Y-axis direction) and the vertical direction, and is rotatable around the vertical axis.

[0028] The processing block 5 includes a processing unit 50 for processing the substrate W. The processing unit 50 grinds the substrate W, for example. Grinding includes lapping. The processing unit 50 includes, for example, four holding units 52A, 52B, 52C, and 52D for holding the substrate W, and tool driving units 53A and 53B for driving the tool D pressed against the substrate W. The tool driving units 53A and 53B rotate or lift the tool D.

[0029] The processing unit 50 may further include a rotating table 51 that rotates around the rotation center line R1. The four holding units 52A to 52D rotate together with the rotating table 51. The four holding units 52A to 52D are arranged at intervals around the rotation center line R1 of the rotating table 51, and rotate simultaneously around the rotation center line R1. The four holding units 52A to 52D rotate independently around their respective rotation center lines R2.

[0030] The two holding parts 52A and 52C are symmetrically arranged with the rotation center line R1 of the rotating table 51 as the center. Each holding part 52A and 52C moves between a first loading and unloading position A3 where the substrate W is loaded and unloaded by the first conveying part 54 and a first processing position A1 where the substrate W is processed by a tool driving part 53A. Whenever the rotating table 51 rotates 180°, the two holding parts 52A and 52C move between the first loading and unloading position A3 and the first processing position A1. At the first processing position A1, when processing the substrate W, the nozzle 59 (see Figure 2 ) Supply processing fluid such as water to the upper surface of the substrate W.

[0031] The remaining two holding parts 52B and 52D are arranged symmetrically with the rotation center line R1 of the rotating table 51 as the center. Each holding part 52B and 52D moves between the second loading and unloading position A0 where the substrate W is loaded and unloaded by the first conveying part 54 and the second processing position A2 where the substrate W is processed by the remaining tool driving parts 53B. Every time the rotating table 51 rotates 180 degrees, the remaining two holding parts 52B and 52D move between the second loading and unloading position A0 and the second processing position A2. At the second processing position A2, when the substrate W is processed, a nozzle (not shown) supplies a processing liquid such as water to the upper surface of the substrate W.

[0032] When viewed from above, the first loading / unloading position A3, the second loading / unloading position A0, the first processing position A1, and the second processing position A2 are arranged counterclockwise in the order described. In this case, when viewed from above, the holding portion 52A, the holding portion 52B, the holding portion 52C, and the holding portion 52D are arranged counterclockwise at 90° intervals in the order described.

[0033] In addition, the first loading / unloading position A3 and the second loading / unloading position A0 may be opposite to each other, and the first processing position A1 and the second processing position A2 may be opposite to each other. In other words, when viewed from above, the first loading / unloading position A3, the second loading / unloading position A0, the first processing position A1, and the second processing position A2 may be arranged clockwise in the order described. In this case, when viewed from above, the holding portion 52A, the holding portion 52B, the holding portion 52C, and the holding portion 52D may be arranged clockwise in the order described at 90° intervals.

[0034] However, the number of holding parts is not limited to four. The number of tool driving parts is not limited to two. In addition, the rotating table 51 may not be provided. A sliding table may be provided instead of the rotating table 51.

[0035] The processing block 5 includes a first conveying unit 54 for conveying the substrate W inside the processing block 5. The first conveying unit 54 includes a suction cup for holding the substrate W. The suction cup can move in the horizontal direction (two directions of the X-axis direction and the Y-axis direction) and the vertical direction, and can rotate around the vertical axis.

[0036] The processing block 5 includes standby sections 57A, 57B, and 57C (see Figure 2 The standby units 57A, 57B, and 57C transfer the substrate W between the first conveyor unit 54 and the second conveyor unit 36. The standby units 57A and 57B transfer the substrate W from the second conveyor unit 36 ​​to the first conveyor unit 54. The standby unit 57C transfers the substrate W from the first conveyor unit 54 to the second conveyor unit 36.

[0037] The standby parts 57A and 57B also serve as alignment parts for adjusting the center position of the substrate W. The alignment parts align the center position of the substrate W with a desired position by means of guides, etc. Thus, when the first conveying part 54 delivers the substrate W to each holding part 52A to 52D, the rotation center line R2 of each holding part 52A to 52D can be aligned with the center of the substrate W.

[0038] Furthermore, the alignment section may detect the center position of the substrate W through an optical system or the like. Furthermore, the alignment section may also detect the crystal orientation of the substrate W through an optical system or the like, and specifically, may also detect the cutout indicating the crystal orientation of the substrate W. The crystal orientation of the substrate W can be positioned to a desired orientation in a rotating coordinate system that rotates together with each of the holding sections 52A to 52D.

[0039] The processing block 5 may further include a turning portion 58 for turning the substrate W (see Figure 2 ). The turning section 58, the standby section 57C, the standby section 57B, and the standby section 57A are stacked from top to bottom in the order described. In addition, there is no particular limitation on the stacking order.

[0040] The reversing section 58 also serves as a standby section for temporarily waiting the substrate W in the middle of the transport path of the substrate W from the processing section 50 to the cleaning section 31A. The reversing section 58 transfers the substrate W from the first transport section 54 to the second transport section 36. In addition, although the reversing section 58 also serves as a standby section, the reversing section 58 and the standby section may be provided separately.

[0041] The substrate processing apparatus 1 further includes a control unit 9. The control unit 9 is, for example, a computer, and includes a computing unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. The storage unit 92 stores a program for controlling various processes performed in the substrate processing apparatus 1. The control unit 9 controls the operation of the substrate processing apparatus 1 by causing the computing unit 91 to execute the program stored in the storage unit 92. A unit control unit for controlling the operation of the unit may be provided for each unit constituting the substrate processing apparatus 1, and a system control unit for uniformly controlling a plurality of unit control units may be provided. The control unit 9 may be composed of a unit control unit and a system control unit.

[0042] Next, refer to Figure 3 The substrate processing method according to one embodiment is described below. The substrate processing method includes, for example, Figure 3 Steps S101 to S110 are shown in FIG. Steps S101 to S110 are implemented under the control of the control unit 9. In addition, the substrate processing method may not include Figure 3 All steps shown may also include Figure 3 Steps not shown in the figure.

[0043] First, the third conveyor 37 takes out the substrate W from the cassette C and conveys it to the conveyor 35. Next, the second conveyor 36 takes out the substrate W from the conveyor 35 and conveys it to the standby section 57A. The substrate W has a first main surface and a second main surface facing oppositely to each other, and the substrate W is conveyed with the first main surface facing upward.

[0044] Next, the standby unit 57A adjusts the center position of the substrate W (step S101). After that, the first conveying unit 54 takes out the substrate W from the standby unit 57A and conveys it to the holding unit (for example, the holding unit 52C) located at the first loading and unloading position A3. The substrate W is placed on the holding unit 52C with the first main surface facing upward. At this time, the center of the substrate W is aligned with the rotation center line R2 of the holding unit 52C. After that, the rotating table 51 is rotated 180° to move the holding unit 52C from the first loading and unloading position A3 to the first processing position A1.

[0045] Next, the tool driving unit 53A drives the tool D to grind the first main surface of the substrate W (step S102). After that, the rotating table 51 is rotated 180 degrees to move the holding unit 52C from the first processing position A1 to the first loading and unloading position A3. Next, the first conveying unit 54 takes out the substrate W from the holding unit 52C located at the first loading and unloading position A3 and conveys it to the reversing unit 58.

[0046] Next, the reversing unit 58 reverses the substrate W (step S103). The substrate W is reversed upside down so that the first main surface faces downward and the second main surface faces upward. Thereafter, the second transport unit 36 ​​takes out the substrate W from the reversing unit 58 and transports it to the cleaning unit 31A.

[0047] Next, the cleaning section 31A cleans the first main surface of the substrate W (step S104). The cleaning section 31A can remove particles such as processing scraps. The cleaning section 31A, for example, scrubs the substrate W. The cleaning section 31A may clean not only the first main surface of the substrate W but also the second main surface. After the substrate W is dried, the second conveying section 36 takes out the substrate W from the cleaning section 31A and conveys it to the standby section 57B.

[0048] Next, the standby unit 57B adjusts the center position of the substrate W (step S105). After that, the first conveying unit 54 takes out the substrate W from the standby unit 57B and conveys it to the holding unit (for example, the holding unit 52D) located at the second loading and unloading position A0. The substrate W is placed on the holding unit 52D with the second main surface facing upward. At this time, the center of the substrate W is aligned with the rotation center line R2 of the holding unit 52D. After that, the rotating table 51 is rotated 180° to move the holding unit 52D from the second loading and unloading position A0 to the second processing position A2.

[0049] Next, the tool driving unit 53B drives the tool D to grind the second main surface of the substrate W (step S106). After that, the rotating table 51 is rotated 180 degrees to move the holding unit 52D from the second processing position A2 to the second loading and unloading position A0. Next, the first conveying unit 54 takes out the substrate W from the holding unit 52D located at the second loading and unloading position A0 and conveys it to the standby unit 57C. Then, the second conveying unit 36 ​​takes out the substrate W from the standby unit 57C and conveys it to the cleaning unit 31B.

[0050] Next, the cleaning section 31B cleans the second main surface of the substrate W (step S107). The cleaning section 31B can remove particles such as processing scraps. The cleaning section 31B, for example, scrubs the substrate W. The cleaning section 31B may clean not only the second main surface of the substrate W but also the first main surface. After the substrate W is dried, the third conveying section 37 takes out the substrate W from the cleaning section 31B and conveys it to the etching section 32B.

[0051] Next, the etching unit 32B etches the second main surface of the substrate W (step S108 ). The etching unit 32B can remove processing marks on the second main surface. After the substrate W is dried, the third conveyor 37 takes out the substrate W from the etching unit 32B and conveys it to the reversing unit 34 .

[0052] Next, the reversing unit 34 reverses the substrate W (step S109). The substrate W is reversed upside down so that the first main surface faces upward and the second main surface faces downward. Thereafter, the third transport unit 37 takes out the substrate W from the reversing unit 34 and transports it to the etching unit 32A.

[0053] Next, the etching unit 32A etches the first main surface of the substrate W (step S110). The etching unit 32A can remove the processing traces on the first main surface. After the substrate W is dried, the third conveying unit 37 takes out the substrate W from the etching unit 32A and stores it in the box C. Then, the current processing is completed.

[0054] exist Figure 3 In the description, the substrate processing method is described with a focus on a substrate W. The substrate processing device 1 can also perform multiple processes at multiple positions simultaneously to improve productivity. For example, the substrate processing device 1 processes the substrate W at each of the first processing position A1 and the second processing position A2 simultaneously. During this period, the substrate processing device 1 performs these processes at each of the first loading and unloading position A3 and the second loading and unloading position A0, for example, in the order of spray cleaning of the substrate W, measurement of the plate thickness distribution of the substrate W, unloading of the substrate W, cleaning of the substrate adsorption surface (upper surface) of the holding portion, and loading of the substrate W.

[0055] After that, the substrate processing apparatus 1 rotates the rotating table 51 by 180°. Next, the substrate processing apparatus 1 processes the substrate W again at each of the first processing position A1 and the second processing position A2 simultaneously. During this period, the substrate processing apparatus 1 performs the processes of spray cleaning of the substrate W, measuring the plate thickness distribution of the substrate W, carrying out the substrate W, cleaning the substrate adsorption surface (upper surface) of the holding portion, carrying in the substrate W, etc. in the order of each of the first loading and unloading position A3 and the second loading and unloading position A0.

[0056] In addition, the processing section 50 of the present embodiment is a grinding section that grinds the substrate W, but the technology disclosed in the present invention is not limited thereto. The processing section 50 may also be a cutting section that cuts the substrate W protected by the protective member, a cutting section that cuts the substrate W, etc. In the case where the processing section 50 is a grinding section, a grindstone or the like is used as the tool D. In the case where the processing section 50 is a cutting section, a blade or the like is used as the tool D. In the case where the processing section 50 is a cutting section, an end mill or the like is used as the tool D.

[0057] Next, refer to Figures 4 to 6 The substrate holding mechanism 60 according to one embodiment will be described. The substrate holding mechanism 60 is used by the processing unit 50. Figure 4 As shown, the substrate holding mechanism 60 includes, for example, a substrate adsorption portion 61 , a suction portion 62 , and a supply portion 63 .

[0058] The substrate adsorption unit 61 adsorbs the substrate W. The substrate adsorption unit 61 is, for example, a vacuum holding disk (holding disk: chuck), and has a porous body 611 that vacuum adsorbs the substrate W, and a holding table 612 that holds the porous body 611. The porous body 611 has an adsorption surface for adsorbing the substrate W. The substrate adsorption unit 61 is not particularly limited, and can be used, for example, as Figure 1 The holding parts 52A to 52D shown in the figure.

[0059] The suction part 62 sucks the fluid from the inside of the substrate adsorption part 61. The suction part 62 includes a valve that switches between sucking the fluid and stopping the suction under the control of the control part 9. The valve is connected to a suction source of the fluid. Although the suction part 62 does not include a suction source, it may include a suction source. In the case where there are multiple types of fluids, valves may be set according to the types of fluids, or a common valve may be set.

[0060] The suction unit 62, for example, sucks gas from the inside of the porous body 611. As a result, the pressure of the porous body 611 is reduced to a pressure lower than the atmospheric pressure, so that the porous body 611 vacuum-adsorbs the substrate W. Thereafter, the suction unit 62 stops sucking gas, and when the pressure of the porous body 611 returns to the atmospheric pressure, the vacuum adsorption force disappears.

[0061] In addition, the substrate adsorption unit 61 is not limited to a vacuum holding disk, and may be, for example, an electrostatic holding disk. The electrostatic holding disk has an insulating substrate and an electrode (not shown). An unillustrated charge supply unit supplies charges to the electrode to generate an electrostatic adsorption force. In addition, an unillustrated charge discharge unit discharges charges from the electrode, and the electrostatic adsorption force disappears.

[0062] When processing the substrate W, the substrate W is sucked by the substrate sucking part 61. When processing the substrate W, a processing liquid such as water is supplied to the substrate W to reduce friction resistance, cool it, prevent processing chips from adhering, etc. The processing liquid penetrates between the substrate sucking part 61 and the substrate W.

[0063] The supply unit 63 supplies fluid to the inside of the substrate adsorption unit 61. The supply unit 63 includes a valve that switches between supplying the fluid and stopping the supply under the control of the control unit 9. The valve is connected to a supply source of the fluid. Although the supply unit 63 does not include a supply source, it may include a supply source. In the case where there are multiple types of fluids, an on-off valve may be provided for each type of fluid, or a common valve may be provided.

[0064] After processing the substrate W, the supply unit 63 supplies the liquid L to the interior of the substrate adsorption unit 61, and the pressure of the liquid L pushes the substrate W (see Figure 6 (B) and Figure 6(C)) to remove the substrate W. The liquid L is, for example, water. The supply unit 63 may also supply a mixed fluid of the liquid L and gas to the inside of the substrate adsorption unit 61, and use the pressure of the mixed fluid to push the substrate W. The gas is, for example, air.

[0065] The supply unit 63 supplies the liquid L to the inside of the porous body 611, for example, to push the substrate W using the pressure of the liquid L. When the substrate adsorption unit 61 is an electrostatic holding disk, a plurality of holes are formed on the adsorption surface of the electrostatic holding disk, and the supply unit 63 may supply the liquid L to the holes. In any case, the substrate W can be pushed using the pressure of the liquid L.

[0066] The substrate W is peeled off from the substrate adsorption unit 61 by the pressure of the liquid L, and the substrate W is transferred from the substrate adsorption unit 61 to the first conveying unit 54. When grinding the substrate W, it is particularly effective to use the pressure of the liquid L. When grinding the substrate W, the tool D presses the substrate W against the substrate adsorption unit 61. As a result, the substrate W is closely attached to the substrate adsorption unit 61.

[0067] The suction unit 62 sucks the liquid L remaining between the substrate adsorption unit 61 and the substrate W into the interior of the substrate adsorption unit 61 (see Figure 6 (D) and Figure 6 (E)). Thus, the amount of liquid L remaining on the substrate W after the substrate W is pushed by the pressure of the liquid L to remove the substrate W from the substrate adsorption unit 61 can be reduced. The liquid L can be prevented from scattering inside the substrate processing apparatus 1 due to the subsequent transportation of the substrate W.

[0068] In order to reduce the amount of liquid L remaining on the substrate W, it is also conceivable to use a sponge roller or the like instead of the suction unit 62. The sponge roller is provided beside the substrate adsorption unit 61 or the like, and is used to remove the liquid L remaining on the substrate W in the middle of the conveying path of the substrate W. According to this embodiment, since the liquid L is removed from the substrate W above the substrate adsorption unit 61, it is not necessary to ensure a dedicated space in the middle of the conveying path of the substrate W. In addition, according to this embodiment, it is possible to save the labor and time of cleaning the sponge roller.

[0069] Next, refer to Figure 5 and Figure 6 To illustrate Figure 3 An example of step S102. Figure 3 Step S106 is performed in the same manner as step S102, and therefore the description thereof is omitted. Figure 5 As shown, step S102 includes steps S201 to S209 , for example. Steps S201 to S209 are implemented under the control of the control unit 9 .

[0070] First, the first conveying unit 54 carries the substrate W into the processing unit 50 (step S201). Next, the substrate adsorption unit 61 adsorbs the substrate W in the processing unit 50 (step S202). After that, the first conveying unit 54 withdraws from the processing unit 50. With the substrate adsorption unit 61 adsorbing the substrate W, the processing unit 50 processes the substrate W (step S203).

[0071] Next, the first conveying unit 54 enters the processing unit 50 and Figure 6 The substrate W is placed on the substrate W as shown in (A) of FIG. 1 . Thereafter, the first conveying unit 54 holds the substrate W from the side opposite to the substrate adsorption unit 61 (e.g., the upper side) (step S204). The first conveying unit 54, for example, has a suction cup 54a for adsorbing the substrate W. The suction cup 54a only needs to adsorb the center of the upper surface of the substrate W, and does not need to adsorb the outer peripheral portion of the upper surface of the substrate W.

[0072] The substrate adsorption unit 61 adsorbs the substrate W so that the substrate W does not deviate when the first conveying unit 54 adsorbs the substrate W. Both the substrate adsorption unit 61 and the first conveying unit 54 adsorb the substrate W. After that, the suction unit 62 stops adsorbing the gas, and the substrate adsorption unit 61 stops adsorbing the substrate W. In this way, only the first conveying unit 54 adsorbs the substrate W. In addition, the first conveying unit 54 may hold the substrate W with a mechanical holding disk instead of the suction disk 54a.

[0073] Then, if Figure 6 As shown in (B), the supply unit 63 supplies liquid L to the inside of the substrate adsorption unit 61, and uses the pressure of the liquid L to push the substrate W upward (step S205). At this time, the first conveying unit 54 presses the substrate W from the side opposite to the substrate adsorption unit 61 to prevent the substrate W from being pushed away. The liquid L leaks out from between the substrate adsorption unit 61 and the substrate W to the side.

[0074] Next, the control unit 9 determines whether the substrate W is held by the first conveying unit 54 (step S206). For example, when the first conveying unit 54 vacuum-adsorbs the substrate W, the pressure sensor 82 detects the pressure indicating the vacuum adsorption force. The control unit 9 makes the determination based on the detection value of the pressure sensor 82. If the substrate W is vacuum-adsorbed by the first conveying unit 54 and there is no vacuum leakage, the pressure is below the threshold.

[0075] When it is determined in step S206 that the substrate W is not held by the first conveyor 54, the process is performed again from step S204, for example. Alternatively, the process of the substrate W may be interrupted to perform maintenance of the substrate processing apparatus 1.

[0076] When it is determined in step S206 that the substrate W is held by the first conveying unit 54, the first conveying unit 54 is caused to move as shown in FIG. Figure 6As a result, the substrate W is separated from the substrate adsorption unit 61 (step S207). A gap is formed between the substrate adsorption unit 61 and the substrate W. The size of the gap is equal to the amount of the substrate W to be raised. The larger the amount of the substrate W to be raised, the larger the size of the gap.

[0077] Before step S208 described later, the substrate W is raised by a set distance D0 so that the substrate W is separated from the substrate adsorption unit 61 by the set distance D0. In this state, the space between the substrate W and the substrate adsorption unit 61 is filled with a film of the liquid L. The set distance D0 is determined in consideration of the suction time of the liquid L in step S208, etc. The larger the set distance D0, the more the residual amount of the liquid L, the longer the suction time of the liquid L becomes, and the lower the productivity. However, when the set distance D0 is too small, the substrate W may come into contact with the substrate adsorption unit 61 by the suction force.

[0078] Next, in a state where the substrate W is separated from the substrate adsorption unit 61 by a set distance D0, the supply unit 63 stops supplying the liquid L, and the suction unit 62 continues as shown in FIG. Figure 6 (D) and Figure 6 The liquid L is sucked as shown in (E) of FIG. 20 (step S208 ). Since the substrate W is held by the first transport unit 54 , the substrate W does not fall due to the suction or the stop of the supply of the liquid L.

[0079] The suction unit 62 sucks the liquid L remaining between the substrate adsorption unit 61 and the substrate W into the interior of the substrate adsorption unit 61. This can reduce the amount of liquid L remaining on the substrate W. It can suppress the liquid L from scattering due to the subsequent transportation of the substrate W, so that the interior of the substrate processing apparatus 1 can be kept clean. Figure 6 As shown in (E), a small amount of liquid L may remain on the substrate W.

[0080] like Figure 6 As shown in (D), the film of liquid L is brought closer from the radial outer side to the radial inner side of the substrate W while contacting both the substrate W and the substrate adsorption part 61. At the adsorption surface of the substrate adsorption part 61, the diameter of the film of liquid L decreases with the passage of time. During this period, the size of the gap between the substrate adsorption part 61 and the substrate W remains constant. It can be considered that the phenomenon that the diameter of the film of liquid L gradually decreases occurs when the adsorption surface of the substrate adsorption part 61 is formed by the porous body 611.

[0081] Finally, the first conveyor 54 moves in the horizontal direction while holding the substrate W and withdraws from the processing unit 50 to carry the substrate W out of the processing unit 50 (step S209 ).

[0082] In addition, the substrate processing method may not include Figure 5 All steps shown may also include Figure 5 For example, the substrate processing method may include a step of cleaning the substrate adsorption unit 61 and the substrate W, which is not shown in the figure, after the step S207 starts and before the step S208 starts. This step is hereinafter referred to as a cleaning step.

[0083] The cleaning step includes rotating the substrate adsorption unit 61 while supplying liquid L to the inside of the substrate adsorption unit 61. The cleaning step is performed after the substrate W leaves the substrate adsorption unit 61 to prevent the substrate adsorption unit 61 and the substrate from rubbing against each other due to the rotation of the substrate adsorption unit 61. Therefore, the cleaning step is performed after the start of step S207.

[0084] In the cleaning step, only the liquid L may be supplied to the interior of the substrate adsorption part 61, or a mixed fluid of the liquid L and the gas may be supplied to the interior of the substrate adsorption part 61. In the cleaning step, the size of the gap formed between the substrate adsorption part 61 and the substrate W may be larger or smaller than the size D0 of the gap formed in step S208, or the two may be the same.

[0085] As described above, the cleaning step includes: rotating the substrate adsorption unit 61 while supplying the liquid L to the inside of the substrate adsorption unit 61. The liquid L flows from the radial inside to the radial outside of the substrate W by centrifugal force while contacting both the substrate adsorption unit 61 and the substrate W. Thus, the substrate adsorption unit 61 and the substrate W can be cleaned. Step S208 is performed after the cleaning step.

[0086] In addition, in step S208, although the substrate adsorption unit 61 may be rotated, it is preferable not to rotate the substrate adsorption unit 61. In the latter case, it is possible to prevent the generation of centrifugal force. If the centrifugal force is not generated, it is easy for the liquid L to approach the radially outer side of the substrate W to the radially inner side while contacting both the substrate W and the substrate adsorption unit 61.

[0087] Next, refer to Figure 7 and Figure 8 An example of the cleaning section 31B is described below. In addition, since the cleaning section 31A is configured similarly to the cleaning section 31B, the description thereof is omitted. The cleaning section 31B includes, for example: a substrate holding section 311 that holds the substrate W; a rotating mechanism 312 that rotates the substrate holding section 311; an annular cover 314 that surrounds the periphery of the substrate W; a friction section 315 that contacts the substrate W; a moving section 316 that moves the friction section 315; a lower nozzle 317 that supplies a cleaning liquid to the lower surface of the substrate W; and an upper nozzle 318 that supplies a cleaning liquid to the upper surface of the substrate W.

[0088] The substrate holding part 311 holds the substrate W horizontally from below, for example. The substrate holding part 311 suctions a first region of the substrate W. The first region is, for example, the center of the lower surface of the substrate W. The rotating mechanism 312 rotates the substrate W by rotating the substrate holding part 311 .

[0089] The annular cover 314 suppresses the scattering of the cleaning liquid thrown off the rotating substrate W. A pair of (at the Figure 7 and Figure 8 The suction cup 313 is shown in the figure only one. The pair of suction cups 313 is formed as one body with the annular cover 314, and can move in the X-axis direction and the Z-axis direction at the same time, for example, and cannot move in the Y-axis direction.

[0090] The friction part 315 contacts the lower surface of the substrate W and rubs the lower surface of the substrate W. The friction part 315 is a brush or a sponge. The friction part 315 is rotated by the motor 319 and moved in the Y-axis direction by the moving part 316 .

[0091] In such Figure 7 As shown, when the substrate holding part 311 adsorbs the first area of ​​the lower surface of the substrate W, the substrate W is rotated by the rotating mechanism 312, and the friction part 315 is moved in the Y-axis direction by the moving part 316. Thus, the area of ​​the lower surface of the substrate W outside the first area is scrubbed.

[0092] In such Figure 8 When the pair of suction cups 313 adsorb the lower surface of the substrate W as shown, the pair of suction cups 313 and the ring cover 314 are moved in the X-axis direction by a driving unit (not shown), and the friction unit 315 is moved in the Y-axis direction by a moving unit 316. Thus, the first area of ​​the lower surface of the substrate W is scrubbed.

[0093] like Figure 7 and Figure 8 As shown in FIG. 1 , the substrate holding portion 311 and the pair of suction cups 313 sequentially hold the substrate W, so that the friction portion 315 can scrub the entire lower surface of the substrate W. In addition, the friction portion 315 is arranged below the substrate W in this embodiment, but can also be arranged above the substrate W, and can also scrub the upper surface of the substrate W. The friction portion 315 can also be arranged on both the upper and lower sides of the substrate W.

[0094] In addition, the substrate W is transported from the processing unit 50 to the cleaning units 31A and 31B in a state moistened with the liquid supplied by the processing unit 50. The substrate W is transported in a state moistened with the liquid because, if the substrate W is dried before cleaning, processing debris adheres firmly to the substrate W, making it difficult to remove the processing debris by cleaning.

[0095] Since the substrate W is carried into the cleaning parts 31A and 31B in a state moistened with the liquid supplied by the processing part 50, the liquid contaminated by the processing chips is brought into the cleaning parts 31A and 31B. The liquid contaminated by the processing chips adheres to the substrate holding parts 311 of the cleaning parts 31A and 31B and contaminates the substrate holding parts 311. Thereafter, the substrate W held by the substrate holding parts 311 is adversely affected.

[0096] Therefore, if Fig. 9 As shown, the standby section 57C includes a liquid removal section 70 for removing liquid from the first region of the substrate W. As described above, the standby section 57C is used to temporarily wait for the substrate W moistened with liquid supplied by the processing section 50 in the middle of the substrate W conveyance path from the processing section 50 to the cleaning section 31B.

[0097] The standby unit 57C includes, for example, a plurality of support pins 571 that support the outer periphery of the substrate W, and a horizontal plate 572 on which the support pins 571 are vertically provided. The plurality of support pins 571 horizontally support the substrate W. A gap is formed between the substrate W and the horizontal plate 572, and at least a portion of the liquid removal unit 70 is disposed in the gap.

[0098] The liquid removal unit 70 dries the first region of the substrate W. The first region of the substrate W is the region in contact with the substrate holding unit 311 of the cleaning unit 31B. By drying the first region of the substrate W, it is possible to prevent the liquid contaminated by the processing scraps from adhering to the substrate holding unit 311 of the cleaning unit 31B, thereby preventing the substrate holding unit 311 from being contaminated. Thus, the cleaning unit 31B can be kept clean.

[0099] The first area of ​​the substrate W is, for example, the center of the lower surface of the substrate W. The center of the lower surface of the substrate W is an area where processing chips are hardly accumulated compared to the upper surface of the substrate W, and also an area where processing chips are hardly accumulated compared to the outer periphery of the lower surface of the substrate W, so there is no problem even if it is dried before cleaning. In addition, since the upper surface of the substrate W is processed, processing chips are easily accumulated, and processing chips that have been around the upper surface of the substrate W may be accumulated on the outer periphery of the lower surface of the substrate W.

[0100] Alternatively, the liquid removal unit 70 may remove liquid from only a portion of the substrate W, rather than from the entire substrate W. For example, the liquid removal unit 70 may remove liquid from the center of the lower surface of the substrate W, rather than from the periphery of the lower surface of the substrate W. Thus, it is possible to prevent processing debris from firmly adhering to the substrate W before cleaning, so that the processing debris can be easily removed by cleaning.

[0101] The liquid removal unit 70 includes, for example, a gas ejection unit 71 that ejects gas toward a first region of the substrate W. By adjusting the ejection direction of the gas and the ejection flow rate of the gas, the region on the substrate W to which the gas is ejected can be adjusted, thereby adjusting the region from which the liquid is removed from the substrate W. The gas ejection unit 71 includes a nozzle 711 for ejecting gas.

[0102] The nozzle 711 is, for example, vertically erected and ejects gas toward the top. The ejected gas is, for example, air. The ejected gas may be a dry gas, such as nitrogen or other inert gas. The number of the nozzles 711 is one in the present embodiment, but may be multiple.

[0103] After being ejected to the center of the lower surface of the substrate W, the gas ejected from the nozzle 711 flows radially along the lower surface of the substrate W, gradually decelerating and gradually reaching atmospheric pressure. As a result, a Bernoulli effect is generated in the gap between the nozzle 711 and the substrate W, and a negative pressure is generated in the center of the lower surface of the substrate W, which attracts the substrate W. Thus, the substrate W is stably supported.

[0104] The gas ejection unit 71 may eject a cleaning liquid such as water before ejecting the gas. The cleaning liquid and the gas are ejected from the same nozzle 711. The first area of ​​the substrate W can be cleaned with the cleaning liquid before the first area of ​​the substrate W is dried by the gas. Therefore, it is possible to further suppress the attachment of machining chips to the substrate holding unit 311 of the cleaning unit 31B.

[0105] The liquid removal unit 70 includes a supply line 73 for supplying gas and cleaning liquid to the nozzle 711. The supply line 73 includes a common line 731 and a plurality of branch lines 732 and 733. The common line 731 connects the nozzle 711 and the plurality of branch lines 732 and 733. Alternatively, the supply line 73 may supply only gas to the nozzle 711.

[0106] The branch line 732 connects the common line 731 to the gas supply source 74. An on-off valve 75 is provided in the middle of the branch line 732. The flow path of the branch line 732 is opened by the on-off valve 75 to eject gas from the nozzle 711. The flow path of the branch line 732 is closed by the on-off valve 75 to stop ejecting gas from the nozzle 711.

[0107] The branch line 733 connects the common line 731 to the cleaning liquid supply source 76. An on-off valve 77 is provided in the middle of the branch line 733. The flow path of the branch line 733 is opened by the on-off valve 77 to cause the nozzle 711 to eject the cleaning liquid. The flow path of the branch line 733 is closed by the on-off valve 77 to stop the nozzle 711 from ejecting the cleaning liquid.

[0108] The liquid removal unit 70 may further include an air volume increasing unit 72, which uses the Coanda effect to draw the gas around the gas ejection unit 71 into the gas flow ejected from the gas ejection unit 71, thereby increasing the air volume ejected onto the substrate W. By using the air volume increasing unit 72, a larger area of ​​the substrate W can be dried with a smaller gas ejection flow rate. In addition, it is possible to suppress the substrate W from floating due to the ejection of the gas.

[0109] The air volume increasing portion 72 has, for example, an annular portion 721 surrounding the entire periphery of the gas ejection portion 71. The annular portion 721 can take in gas from the entire periphery of the gas ejection portion 71. The annular portion 721 preferably has a circular ring shape. Gas can be taken in uniformly from the entire periphery with the gas ejection portion 71 as the center. In addition, the annular portion 721 can also have a square ring shape.

[0110] The gas ejection portion 71 may protrude further toward the substrate W than the air volume increasing portion 72, for example, may protrude further upward than the air volume increasing portion 72. Specifically, the nozzle 711 of the gas ejection portion 71 may protrude further toward the substrate W than the annular portion 721 of the air volume increasing portion 72, for example, may protrude further upward than the annular portion 721.

[0111] Since the nozzle 711 protrudes further toward the substrate W than the annular portion 721, the gas ejected from the nozzle 711 can easily pass through between the annular portion 721 and the substrate W. Therefore, the flow rate of the gas radially diffused along the lower surface of the substrate W can be increased. A larger area of ​​the substrate W can be dried with a smaller gas ejection flow rate. In addition, it is possible to suppress the substrate W from floating due to the ejection of the gas.

[0112] The air volume increasing portion 72 has an inlet 722 for taking in ambient air between the annular portion 721 and the horizontal plate 572. The area of ​​the inlet 722 is equal to the product of the height of the gap between the annular portion 721 and the horizontal plate 572 and the outer circumference of the annular portion 721, for example.

[0113] The air volume increasing portion 72 has a blowing port 723 for blowing gas toward the substrate W on the surface of the annular portion 721 facing the substrate W. The area of ​​the blowing port 723 is, for example, the area of ​​the opening formed on the surface of the annular portion 721 facing the substrate W.

[0114] The area of ​​the intake port 722 may be larger than the area of ​​the blowing port 723. Thus, a large amount of gas can be taken in from around the air volume increasing portion 72, and the air volume blown onto the substrate W can be further increased.

[0115] The annular portion 721 may have a tapered surface 724 that expands toward the substrate W (eg, upward) at the blowing port 723. The gas flow can be smoothly turned along the tapered surface 724, thereby suppressing the generation of vortices and suppressing gas stagnation.

[0116] The annular portion 721 has an opening 725 on a surface (eg, lower surface) opposite to the surface facing the substrate W. The annular portion 721 may have a tapered surface (not shown) that expands toward the side opposite to the substrate W (eg, downward) at the opening 725 .

[0117] In addition, the liquid removal unit 70 includes a standby unit 57C in this embodiment for temporarily waiting the substrate W in the middle of the transport path of the substrate W from the processing unit 50 to the cleaning unit 31B, but may also include a standby unit (for example, a reversing unit 58) for temporarily waiting the substrate W in the middle of the transport path of the substrate W from the processing unit 50 to the cleaning unit 31A. In addition, as described above, the reversing unit 58 may be provided separately from the standby unit.

[0118] In the processing section 50, the suction section 62 suctions the liquid L attached to the substrate W, and then in the standby section, the liquid removal section 70 removes the liquid L attached to the substrate W. Thus, not only can the liquid L be prevented from scattering inside the substrate processing apparatus 1, but also the substrate holding section 311 of the cleaning section 31A, 31B can be prevented from being contaminated.

[0119] The above describes the embodiments of the substrate holding mechanism, substrate processing device, and substrate processing method involved in the present disclosure, but the present disclosure is not limited to the above embodiments. Various changes, corrections, substitutions, additions, deletions, and combinations can be made within the scope of the patent claims. These also belong to the technical scope of the present disclosure.

[0120] This application claims the priority of Japanese Patent Application No. 2022-108009 filed with the Japan Patent Office on July 4, 2022, and all the contents of Japanese Patent Application No. 2022-108009 are cited in this application.

[0121] Description of Reference Numerals

[0122] 1: substrate processing device; 9: control unit; 54: first conveying unit; 61: substrate adsorption unit; 62: suction unit; 63: supply unit; L: liquid; W: substrate.

Claims

1. A substrate processing device, comprising: a substrate adsorption unit for adsorbing a substrate; and a supply unit for supplying a fluid into the interior of the substrate adsorption unit; a suction portion that sucks fluid from the interior of the substrate adsorption portion; a first conveying unit that holds the substrate from a side opposite to the substrate adsorption unit; and a control unit that controls the supply unit, the suction unit, and the first conveying unit, wherein The control unit performs the following control: using the first conveying unit to hold the substrate adsorbed by the substrate adsorbing unit from the side opposite to the substrate adsorbing unit; supplying liquid to the interior of the substrate adsorbing unit; and moving the first conveying unit by a set distance to move the substrate away from the substrate adsorbing unit by a set distance; And in a state where the substrate is separated from the substrate adsorption portion by a set distance, the liquid remaining between the substrate adsorption portion and the substrate is sucked into the interior of the substrate adsorption portion.

2. The substrate processing apparatus according to claim 1, wherein: The substrate adsorption unit includes a porous body having an adsorption surface for adsorbing the substrate, and the supply unit supplies the liquid into the porous body.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The control unit performs control to fill a space between the substrate and the substrate adsorption unit with a film of the liquid in a state where the substrate is separated from the substrate adsorption unit by a set distance.

4. The substrate processing apparatus according to claim 1 or 2, wherein: The control unit determines whether the substrate is held by the first conveying unit after supplying the liquid into the substrate adsorption unit and before sucking the liquid into the substrate adsorption unit.

5. The substrate processing apparatus according to claim 1 or 2, wherein: Also available: a processing section having the substrate adsorption section and a tool driving section, wherein the tool driving section drives a tool for processing the substrate adsorbed on the substrate adsorption section; a cleaning unit for cleaning the substrate processed by the processing unit; as well as a standby section that temporarily waits for the substrate in the middle of a transport path of the substrate from the processing section to the cleaning section, The cleaning unit includes a substrate holding unit for holding the substrate. The standby section includes a liquid removal section configured to remove the liquid from a region of the substrate in contact with the substrate holding section.

6. The substrate processing apparatus according to claim 5, wherein: The liquid removal unit includes a gas ejection unit configured to eject gas toward a region of the substrate in contact with the substrate holding unit.

7. The substrate processing apparatus according to claim 6, wherein: The gas ejection unit ejects the cleaning liquid before ejecting the gas, thereby supplying the cleaning liquid to the region of the substrate.

8. The substrate processing apparatus according to claim 6, wherein: The liquid removal unit includes an air volume increasing unit configured to increase the air volume ejected onto the substrate by introducing gas around the gas ejection unit into a gas flow ejected from the gas ejection unit using a Coanda effect.

9. The substrate processing apparatus according to claim 8, wherein: The air volume increasing portion includes an annular portion surrounding the entire periphery of the gas ejection portion.

10. A substrate processing method, comprising: Adsorbing the substrate by the substrate adsorption part; holding the substrate from a side opposite to the substrate adsorption portion by a first conveying portion; supplying liquid into the interior of the substrate adsorption portion; By moving the first conveying unit by a set distance, the substrate is separated from the substrate adsorption unit by a set distance; as well as The liquid remaining between the substrate adsorption portion and the substrate is sucked into the interior of the substrate adsorption portion in a state where the substrate is separated from the substrate adsorption portion by a set distance.

11. The substrate processing method according to claim 10, wherein: The substrate adsorption unit includes a porous body having an adsorption surface for adsorbing the substrate, and the substrate processing method includes supplying the liquid into the porous body.

12. The substrate processing method according to claim 10 or 11, wherein: include: In a state where the substrate is separated from the substrate adsorption portion by a set distance, a space between the substrate and the substrate adsorption portion is filled with a film of the liquid.

13. The substrate processing method according to claim 10 or 11, wherein: include: After the liquid is supplied into the substrate adsorption section and before the liquid is sucked into the substrate adsorption section, it is determined whether the substrate is held by the first transport section.

14. The substrate processing method according to claim 10 or 11, wherein: include: The substrate is processed by a processing unit having the substrate adsorption unit and a tool driving unit, the tool driving unit drives a tool for processing the substrate adsorbed on the substrate adsorption unit; the substrate is cleaned by a cleaning unit; and the substrate is temporarily waited in a standby unit in the middle of the substrate conveying path from the processing unit to the cleaning unit, The substrate processing method further includes removing the liquid from a region of the substrate in contact with the substrate holding portion in the standby portion before holding the substrate by the substrate holding portion in the cleaning portion.

15. The substrate processing method according to claim 14, wherein: include: In the standby section, the gas ejection section ejects gas toward the region of the substrate.

16. The substrate processing method according to claim 15, wherein: include: In the standby section, the cleaning liquid is supplied to the region of the substrate by ejecting the cleaning liquid before the gas ejecting section ejects the gas.

17. The substrate processing method according to claim 15, wherein: include: In the standby section, the air volume increasing section provided around the gas ejection section takes the gas around the gas ejection section into the gas flow ejected from the gas ejection section by utilizing the Coanda effect, thereby increasing the air volume ejected onto the substrate.

18. The substrate processing method according to claim 17, wherein: The air volume increasing portion includes an annular portion surrounding the entire periphery of the gas ejection portion.

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