PZT-based piezoelectric ceramic, preparation method thereof and piezoelectric device
By introducing PNN into PZT-based ceramics and adopting specific preparation methods, the problem of PZT-based ceramics being sensitive to zirconium titanium ratio is solved, its piezoelectric performance is significantly improved, and a higher piezoelectric coefficient d33 is achieved.
Patent Information
- Application Number
- CN202411467370.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-21
- Publication Date
- 2025-02-14
AI Technical Summary
PZT-based ceramics are sensitive to zirconium titanium ratio, which makes it difficult to guarantee the repeatability and uniformity of the ceramics, affecting its piezoelectric properties.
PNN is introduced as the third component, and the chemical formula of PZT-based ceramics is adjusted to 0.35Pb(Ni1/3Nb2/3)O3-0.26Pb0.92Ba0.04Sr0.04ZrO3-0.39Pb0.92Ba0.04Sr0.04TiO3 is adjusted to adjust the chemical formula of PZT-based ceramics to 0.35Pb(Ni1/3Nb2/3)O3-0.26Pb0.92Ba0.04Sr0.04TiO3, and the chemical formula of PZT-based ceramics is 0.35Pb0.92Ba0.04Sr0.04TiO3, and the chemical formula of PZT-based ceramics is 0.35Pb0.92Ba0.04Sr0.04TiO3, and the chemical formula of PZT Ceramics are prepared by granulation, debonding and sintering, and finally undergo electrode and polarization treatment.
It improves the piezoelectric performance of pure PZT, and the piezoelectric coefficient d33 can reach 1182pC/N, enhancing the application range of ceramics.
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Figure CN119430925A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of piezoelectric ceramics, and in particular to a PZT-based piezoelectric ceramic and a preparation method thereof and a piezoelectric device. Background Art
[0002] Piezoelectric ceramics are important functional materials that use positive and negative piezoelectric effects to convert mechanical energy into electrical energy. As the core components of sensors, actuators, transducers, filters, and mechanical energy harvesters, they are widely used in industry, communications, medical treatment, military, and new energy. In recent decades, piezoelectric transducer materials have occupied a key position in the field of sound waves and ultrasound as electroacoustic transducers. Among them, piezoelectric materials are the core part of piezoelectric transducers, and the quality of their piezoelectric properties directly determines the application range of the transducer. Therefore, the preparation of high-performance piezoelectric materials is a crucial step. At present, lead-based piezoelectric ceramics / single crystals such as lead zirconate titanate (PZT) and lead magnesium niobate-lead titanate (PMN-PT) show excellent piezoelectric properties and are widely used commercially. The construction of MPB (quasi-morphotropic phase boundary) in PZT is further considered to be a classic case in the field of piezoelectric materials. Now it is a favorable tool to promote the improvement of the electrical properties of piezoelectric materials. However, the PZT-based ceramics with quasi-morphotropic phase boundary components are more sensitive to the ratio of zirconium to titanium, which makes it difficult to ensure the repeatability and uniformity of ceramics. Summary of the invention
[0003] Based on this, it is necessary to provide a PZT-based piezoelectric ceramic with good piezoelectric performance, a preparation method thereof, and a piezoelectric device.
[0004] A PZT-based piezoelectric ceramic, the chemical formula of which is: 0.35Pb(Ni 1 / 3 Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr 0.04 TiO3.
[0005] The PZT-based piezoelectric ceramics of the technical solution of the present invention use PZT as the matrix and introduce PNN as the third component to improve the piezoelectric properties of pure PZT. After experimental verification, the piezoelectric coefficient d 33 It can reach 1182pC / N, which is conducive to wide application.
[0006] In a feasible implementation, the piezoelectric coefficient d of the PZT-based piezoelectric ceramic is 33 It is 1046pC / N~1182pC / N.
[0007] A method for preparing a PZT-based piezoelectric ceramic comprises the following steps:
[0008] Based on the chemical formula 0.35Pb(Ni 1 / 3 Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr 0.04 The stoichiometric ratio of TiO3 is 1: 1, PbO powder, NiO powder, Nb2O5 powder, ZrO2 powder, BaCO3 powder, SrCO3 powder and TiO2 powder are uniformly mixed, and then pre-sintered to obtain ceramic powder;
[0009] Granulating the ceramic powder, and then pressing and molding to obtain a ceramic green sheet;
[0010] The ceramic green sheet is subjected to debonding and sintering treatment to obtain a sintered ceramic sheet; and the sintered ceramic sheet is subjected to electrode and polarization treatment to obtain a PZT-based piezoelectric ceramic.
[0011] The preparation method of the PZT-based piezoelectric ceramics of the technical solution of the present invention is simple in process. The prepared PZT-based piezoelectric ceramics use PZT as the matrix and introduce PNN as the third component, thereby improving the piezoelectric properties of pure PZT. After experimental verification, the piezoelectric coefficient d 33 It can reach 1182pC / N, which is conducive to wide application.
[0012] In a feasible implementation, the temperature of the pre-sintering treatment is 700° C. to 900° C., the time of the pre-sintering treatment is 1.5 h to 4 h, and the heating rate of the pre-sintering treatment is 3° C. / min to 5° C. / min.
[0013] In a feasible implementation, the size of the ceramic powder is less than 0.2 mm.
[0014] In a feasible implementation, the granulation operation is: mixing the ceramic powder and the binder evenly, and then passing through an 80-mesh sieve; wherein the mass percentage of the binder is 6% to 10%.
[0015] In a feasible implementation, the temperature of the debonding is 600° C. to 650° C., and the heat preservation time of the debonding is 4 h to 6 h;
[0016] The sintering temperature is 1240° C. to 1270° C., and the sintering heat preservation time is 2 h to 4 h.
[0017] In a feasible implementation, the operation of the electrode is: silver-plating the two surfaces of the sintered ceramic sheet with silver electrodes by a silver-burning method, the diameter of the silver electrode is 8mm to 10mm, the silver-burning temperature is 500℃ to 600℃, and the insulation time is 20min to 30min.
[0018] In a feasible implementation, the polarization treatment is performed as follows: placing the electroded ceramic sheet in silicone oil, applying an electric field of 0.25 kV / mm to 2 kV / mm, at a temperature of 120°C to 130°C, until the voltage remains stable and then maintaining the voltage until the temperature drops to room temperature.
[0019] A piezoelectric device comprises the above-mentioned PZT-based piezoelectric ceramic or a PZT-based piezoelectric ceramic prepared by any of the above-mentioned methods for preparing a PZT-based piezoelectric ceramic.
[0020] The piezoelectric device of the technical solution of the present invention includes the above-mentioned PZT-based piezoelectric ceramics. The PZT-based piezoelectric ceramics use PZT as the matrix and introduce PNN as the third component to improve the piezoelectric properties of pure PZT. After experimental verification, the piezoelectric coefficient d of the PZT-based piezoelectric ceramics of the technical solution of the present invention is 33 It can reach 1182pC / N, which is conducive to wide application. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 A flow chart of a method for preparing a PZT-based piezoelectric ceramic according to an embodiment of the present invention;
[0022] Figure 2 The dielectric temperature spectrum of the PZT-based piezoelectric ceramic of Example 1 of the present invention;
[0023] Figure 3 The in-situ temperature variation d of the samples of the PZT-based piezoelectric ceramics of Examples 2 to 4 of the present invention at different high temperature polarization electric fields 33 . DETAILED DESCRIPTION
[0024] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.
[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.
[0026] The chemical formula of the PZT-based piezoelectric ceramic according to one embodiment is: 0.35Pb(Ni 1 / 3 Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr 0.04 TiO3. The PZT-based piezoelectric ceramic of this embodiment is a lead zirconate titanate-based relaxor ferroelectric ceramic material, whose Curie temperature is below the boiling point of silicone oil, and the Curie temperature is 110°C, and polarization can be performed in silicone oil.
[0027] Based on the above-mentioned embodiment, the piezoelectric coefficient d of the PZT-based piezoelectric ceramic is 33 is 1046 pC / N to 1182 pC / N. Furthermore, the piezoelectric coefficient d of the PZT-based piezoelectric ceramic is 33 It may be, but is not limited to, 1046 pC / N, 1154 pC / N or 1182 pC / N. The PZT-based piezoelectric ceramic of this embodiment has excellent piezoelectric properties and is expected to be applied in the fields of ultrasonic transducers, medical transducers, etc.
[0028] The PZT-based piezoelectric ceramics of the technical solution of the present invention use PZT as the matrix and introduce PNN as the third component to improve the piezoelectric properties of pure PZT. After experimental verification, the piezoelectric coefficient d 33 It can reach 1182pC / N, which is conducive to wide application.
[0029] See also Figure 1 A method for preparing a PZT-based piezoelectric ceramic according to an embodiment of the present invention comprises the following steps:
[0030] S10, based on the chemical formula 0.35Pb(Ni 1 / 3 Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr 0.04The PbO powder, NiO powder, Nb2O5 powder, ZrO2 powder, BaCO3 powder, SrCO3 powder and TiO2 powder are uniformly mixed according to the stoichiometric ratio of TiO3, and then pre-sintered to obtain ceramic powder.
[0031] In step S10, the operation of uniformly mixing PbO powder, NiO powder, Nb2O5 powder, ZrO2 powder, BaCO3 powder, SrCO3 powder and TiO2 powder is as follows: put PbO powder, NiO powder, Nb2O5 powder, ZrO2 powder, BaCO3 powder, SrCO3 powder and TiO2 powder into a ball mill, pour in anhydrous ethanol, put the ball mill into a planetary ball mill, ball mill at a speed of 200r / min~400r / min for 12h~20h, and obtain powder after drying.
[0032] In a feasible implementation, the temperature of the pre-sintering treatment is 700°C to 900°C, the time of the pre-sintering treatment is 1.5h to 4h, and the heating rate of the pre-sintering treatment is 3°C / min to 5°C / min. The pre-sintered ceramic powder is placed in a ball mill and anhydrous ethanol is added, and the ball mill is milled at a speed of 200r / min to 400r / min for 12h to 20h to obtain a slurry; the powder after the slurry is dried is ground and crushed and passed through an 80-mesh sieve to obtain a ceramic powder. Furthermore, the temperature of the pre-sintering treatment can be but not limited to 700°C, 800°C or 900°C, the time of the pre-sintering treatment can be but not limited to 1.5h, 2h, 3h or 4h, and the heating rate of the pre-sintering treatment can be but not limited to 3°C / min, 4°C / min or 5°C / min.
[0033] In a feasible implementation, the size of the ceramic powder is less than 0.2 mm.
[0034] S20, granulating the ceramic powder obtained in step S10, and then pressing and molding to obtain a ceramic green sheet.
[0035] In a feasible implementation, the granulation operation is: the ceramic powder and the binder are mixed evenly, and then passed through an 80-mesh sieve; wherein the mass percentage of the binder is 6% to 10%. wherein the powder size after passing through the 80-mesh sieve is less than 0.2 mm, and the mass percentage of the binder is the mass percentage of the binder relative to the pre-fired powder. further, the binder is polyvinyl alcohol (PVA). further, the mass percentage of the binder can be but is not limited to 6%, 7%, 8%, 9% or 10%.
[0036] In a feasible implementation, the pressing operation is: pressing the ceramic green sheet under a pressure of 2MPa to 5MPa. The present invention does not limit the diameter of the ceramic green sheet, and the diameter of the ceramic green sheet can be set according to actual conditions, for example, 10mm.
[0037] S30, debonding and sintering the ceramic green sheet obtained in step S20 to obtain a sintered ceramic sheet.
[0038] In a feasible implementation, the temperature of debonding is 600℃~650℃, and the holding time of debonding is 4h~6h; the temperature of sintering is 1240℃~1270℃, and the holding time of sintering is 2h~4h. Further, the temperature of debonding can be but not limited to 600℃, 610℃, 620℃, 630℃, 640℃ or 650℃, and the holding time of debonding can be but not limited to 4h, 5h or 6h; the temperature of sintering can be but not limited to 1240℃, 1250℃, 1260℃ or 1270℃, and the holding time of sintering can be but not limited to 2h, 3h or 4h.
[0039] S40, performing electrode and polarization treatment on the sintered ceramic sheet obtained in step S30 to obtain a PZT-based piezoelectric ceramic.
[0040] In a feasible implementation, the operation of the electrode is: silver-plating the two surfaces of the sintered ceramic sheet with silver electrodes by the silver-burning method, the diameter of the silver electrode is 8mm~10mm, the silver-burning temperature is 500℃~600℃, and the insulation time is 20min~30min.
[0041] In a feasible implementation, the operation of the polarization treatment is: placing the ceramic sheet behind the electrode in silicone oil, applying an electric field of 0.25kV / mm to 2kV / mm, and the temperature is 120°C to 130°C, until the voltage remains stable and then the voltage is maintained until the temperature drops to room temperature. Further, the applied electric field may be, but is not limited to, 0.25kV / mm, 0.5kV / mm, 1kV / mm or 2kV / mm, and the temperature may be, but is not limited to, 120°C, 121°C, 122°C, 123°C, 124°C, 125°C, 126°C, 127°C, 128°C, 129°C or 130°C.
[0042] In the preparation method of this embodiment, a high temperature polarization method is used to fully polarize the piezoelectric ceramic and give full play to its piezoelectric performance. By selecting an appropriate high temperature polarization electric field and temperature, the piezoelectric performance of the PZT-based piezoelectric ceramic of this embodiment can be improved by about 21.4% compared with the traditional polarization method.
[0043] Furthermore, high temperature polarization is carried out at a higher polarization temperature, which is higher than the Curie temperature Tc of the piezoelectric ceramic, and is lower than the coercive field Ec under a lower electric field, while the polarization electric field is kept unchanged until the ceramic cools down. Different from the traditional method of increasing the temperature during the polarization process to promote the reversal of the domain structure, high temperature polarization utilizes the temperature dependence of the ferroelectric phase structure, that is, the initial polarization temperature is higher than the Curie temperature of the ceramic, and then the polarization electric field is maintained to gradually cool to room temperature. During the transition from the paraelectric phase to the ferroelectric phase, the ferroelectric domain structure of the ceramic will re-nucleate and grow, and the disturbance of the external polarization electric field will force the domain to grow along the direction of the polarization electric field. The high temperature polarization method can avoid the internal stress generated during the reversal of the non-180° oriented domain, thereby improving the orientation of the domain and making the polarization process more sufficient. On the other hand, high temperature increases the density of the domain wall and reduces the domain size. Under the action of the electric field, as the temperature gradually decreases, these areas will remain. Accordingly, these small-sized areas are more sensitive to the external electric field, thereby improving the piezoelectric properties of the ceramic. Thus, higher piezoelectric properties are obtained.
[0044] The preparation method of the PZT-based piezoelectric ceramics of the technical solution of the present invention is simple in process. The prepared PZT-based piezoelectric ceramics use PZT as the matrix and introduce PNN as the third component, thereby improving the piezoelectric properties of pure PZT. After experimental verification, the piezoelectric coefficient d 33 It can reach 1182pC / N, which is conducive to wide application.
[0045] A piezoelectric device according to one embodiment includes the above-mentioned PZT-based piezoelectric ceramic or a PZT-based piezoelectric ceramic prepared by any of the above-mentioned methods for preparing a PZT-based piezoelectric ceramic.
[0046] The piezoelectric device of the technical solution of the present invention includes the above-mentioned PZT-based piezoelectric ceramic or the PZT-based piezoelectric ceramic prepared by any of the above-mentioned methods for preparing PZT-based piezoelectric ceramics. The PZT-based piezoelectric ceramic uses PZT as the matrix and introduces PNN as the third component to improve the piezoelectric performance of pure PZT. After experimental verification, the piezoelectric coefficient d of the PZT-based piezoelectric ceramic of the technical solution of the present invention is 33 It can reach 1182pC / N, which is conducive to wide application.
[0047] With reference to the above implementation contents, in order to make the technical solution of the present invention more specific, clear and easy to understand, the technical solution of the present invention is now exemplified. However, it should be noted that the contents to be protected by the present invention are not limited to the following embodiments.
[0048] Example 1
[0049] Embodiment 1 provides a PZT-based piezoelectric ceramic and a preparation method thereof. The chemical formula of the PZT-based piezoelectric ceramic is 0.35Pb(Ni 1 / 3Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr 0.04 TiO3, the preparation method comprises the following steps:
[0050] The raw materials are selected from PbO powder, NiO powder, Nb2O5 powder, ZrO2 powder, BaCO3 powder, SrCO3 powder and TiO2 powder. The raw materials are weighed according to the stoichiometric ratio of Pb, Ni, Nb, Ba, Sr, Zr and Ti elements in the chemical formula. The weighed raw materials are placed in a ball mill, and zirconium oxide balls and anhydrous ethanol are added to the ball mill. The ball mill is milled for 16 hours. After the material is discharged and dried, a mixed powder is obtained, wherein the mass ratio of anhydrous ethanol to the raw material is 1:1; the mass ratio of zirconium oxide balls used for ball milling to the raw material is 2:1. The mixed powder is placed in an alumina crucible for pre-sintering. The pre-sintering temperature is 850°C, the heating rate is 3°C / min, and after keeping warm for 2 hours, it is naturally cooled to obtain the pre-sintered powder. The pre-sintered powder is ground and then ball milled for 16 hours. After the second ball milling, the ceramic powder is obtained.
[0051] The ceramic powder obtained in the previous step was granulated using 8% polyvinyl alcohol (PVA) as a binder, sieved through a 80-mesh sieve, and pressed under a pressure of 4 MPa to form a ceramic green sheet.
[0052] The ceramic green sheets obtained in the previous step were respectively subjected to debonding treatment by heat preservation at 610°C for 4 hours, and then sintered and heat preserved at 1270°C for 3 hours to obtain the lead zirconate titanate-based relaxor ferroelectric ceramic material 0.35Pb(Ni 1 / 3 Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr 0.04 TiO3. The upper and lower surfaces of the sintered ceramic sheet were polished to a thickness of 0.7 mm, and then silver-plated electrodes were applied, and silver was fired at 620°C for 20 minutes.
[0053] The ceramic sheet behind the electrode was placed in silicone oil, an electric field of 3 kV / mm was applied, the temperature was 45 °C, and the conventional polarization conditions were maintained for 20 min. The results are shown in Table 1. 33 =974pC / N, and the dielectric temperature spectrum test was performed on it, and its Curie temperature was found to be 111.1℃. Figure 2 shown. Figure 2In the figure, the four curves are 1kHz, 10kHz, 100kHz and 1000kHz from top to bottom.
[0054] Example 2
[0055] Embodiment 2 provides a PZT-based piezoelectric ceramic and a preparation method thereof. The chemical formula of the PZT-based piezoelectric ceramic is 0.35Pb(Ni 1 / 3 Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr 0.04 The preparation method of TiO3 is different from that of Example 1 only in that the ceramic sheet behind the electrode is placed in silicone oil, an electric field of 0.5 kV / mm is applied, the temperature is 120°C, until the voltage remains stable, and the voltage is maintained until the temperature drops to room temperature under high temperature polarization conditions. The results are shown in Table 1. 33 =1046pC / N.
[0056] Example 3
[0057] Embodiment 3 provides a PZT-based piezoelectric ceramic and a preparation method thereof. The chemical formula of the PZT-based piezoelectric ceramic is 0.35Pb(Ni 1 / 3 Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr 0.04 The preparation method of TiO3 is different from that of Example 1 only in that the ceramic sheet behind the electrode is placed in silicone oil, an electric field of 1 kV / mm is applied, the temperature is 120°C, until the voltage remains stable, and the voltage is maintained until the temperature drops to room temperature under high temperature polarization conditions. The results are shown in Table 1. 33 =1182pC / N.
[0058] Example 4
[0059] Embodiment 4 provides a PZT-based piezoelectric ceramic and a preparation method thereof. The chemical formula of the PZT-based piezoelectric ceramic is 0.35Pb(Ni 1 / 3 Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr0.04 The preparation method of TiO3 is different from that of Example 1 only in that the ceramic sheet behind the electrode is placed in silicone oil, an electric field of 2 kV / mm is applied, and the temperature is 120°C until the voltage remains stable. The voltage is maintained until the temperature drops to room temperature under high temperature polarization conditions. The results are shown in Table 1. 33 =1154pC / N.
[0060] Performance Testing:
[0061] (1) Testing the d of the PZT-based piezoelectric ceramics of Examples 1 to 4 33 The test method is as follows, and the test results are shown in Table 1. Test the temperature variation d of the PZT-based piezoelectric ceramics of Examples 2 to 4 33 , the test method is as follows, and the test results are shown in Table 1 and Figure 3 shown.
[0062] d 33 Test: The electrode-plated ceramic sample is placed in a withstand voltage tester and subjected to different polarization treatments, including conventional polarization and high temperature polarization. The polarized ceramic sample is subjected to quasi-static d 33 Measuring instrument for testing ceramics 33 .
[0063] Temperature Variation 33 Test: Using in situ temperature variation 33 Tester (instrument model is BWD330510, manufacturer is Shanghai Tongguo Intelligent Technology), in d 33 The temperature is varied in situ based on the test.
[0064] Table 1 d of PZT-based piezoelectric ceramics of Examples 1 to 4 33 data
[0065] Performance parameters E(kV / mm) <![CDATA[d 33 (pC / N)(25℃) <!-- 5 -->]]> Example 1 3 974 Example 2 0.5 1046 Example 3 1 1182 Example 4 2 1154
[0066] It can be seen from Table 1 that the piezoelectric properties of the PZT-based piezoelectric ceramics of Examples 1 to 4 of the present invention are all good. On this basis, compared with the traditional polarization method of Example 1, the piezoelectric properties of the PZT-based piezoelectric ceramics obtained by the high-temperature polarization method of Examples 2 to 4 are all improved, and can reach up to 21.4%.
[0067] from Figure 3 It can be seen that during high temperature polarization, the polarization electric field of 1kV / mm is the optimal polarization electric field condition.
[0068] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0069] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.
Claims
1. A PZT-based piezoelectric ceramic, characterized in that: The chemical formula of the PZT-based piezoelectric ceramic is: 0.35Pb(Ni 1 / 3Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr 0.04 TiO3.
2. The PZT-based piezoelectric ceramic according to claim 1, characterized in that: The piezoelectric coefficient d of the PZT-based piezoelectric ceramic 33 It is 1046pC / N~1182pC / N.
3. A method for preparing a PZT-based piezoelectric ceramic, characterized in that: The steps include: Based on the chemical formula 0.35Pb(Ni 1 / 3 Nb 2 / 3 )O3-0.26Pb 0.92 Ba 0.04 Sr 0.04 ZrO3-0.39Pb 0.92 Ba 0.04 Sr 0.04 The stoichiometric ratio of TiO3 is 1: 1, PbO powder, NiO powder, Nb2O5 powder, ZrO2 powder, BaCO3 powder, SrCO3 powder and TiO2 powder are uniformly mixed, and then pre-sintered to obtain ceramic powder; Granulating the ceramic powder, and then pressing and molding to obtain a ceramic green sheet; Debonding and sintering the ceramic green sheet to obtain a sintered ceramic sheet; as well as The sintered ceramic sheet is subjected to electrode and polarization treatment to obtain a PZT-based piezoelectric ceramic.
4. The method for preparing a PZT-based piezoelectric ceramic according to claim 3, characterized in that: The temperature of the pre-sintering treatment is 700° C. to 900° C., the time of the pre-sintering treatment is 1.5 h to 4 h, and the heating rate of the pre-sintering treatment is 3° C. / min to 5° C. / min.
5. The method for preparing a PZT-based piezoelectric ceramic according to claim 3, characterized in that: The size of the ceramic powder is less than 0.2 mm.
6. The method for preparing a PZT-based piezoelectric ceramic according to claim 3, characterized in that: The granulation operation is: the ceramic powder and the binder are mixed evenly, and then passed through an 80-mesh sieve; wherein the mass percentage of the binder is 6% to 10%.
7. The method for preparing a PZT-based piezoelectric ceramic according to claim 3, characterized in that: The temperature of the debonding is 600°C to 650°C, and the heat preservation time of the debonding is 4h to 6h; The sintering temperature is 1240° C. to 1270° C., and the sintering heat preservation time is 2 h to 4 h.
8. The method for preparing a PZT-based piezoelectric ceramic according to claim 3, characterized in that: The operation of the electrode is: silver-plating the two surfaces of the sintered ceramic sheet with silver electrodes by the silver-burning method, the diameter of the silver electrode is 8mm-10mm, the silver-burning temperature is 500℃-600℃, and the insulation time is 20min-30min.
9. The method for preparing a PZT-based piezoelectric ceramic according to claim 3, characterized in that: The operation of the polarization treatment is: placing the electroded ceramic sheet in silicone oil, applying an electric field of 0.25kV / mm to 2kV / mm, at a temperature of 120°C to 130°C, until the voltage remains stable and then maintaining the voltage until the temperature drops to room temperature.
10. A piezoelectric device, characterized in that: The invention comprises the PZT-based piezoelectric ceramic according to claim 1 or 2, or a PZT-based piezoelectric ceramic prepared by the preparation method of the PZT-based piezoelectric ceramic according to any one of claims 3 to 9.
Citation Information
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