A benzotriazine radical compound, its preparation method, and its application in organic memristors and artificial synapses.

By preparing benzotriazine radical compounds and applying them to organic memristors and artificial synapses, the problem of low efficiency in traditional computers has been solved, and the simulation and stability of artificial synapses have been improved, thus promoting the development of neuromorphic computing.

CN119431397BActive Publication Date: 2026-05-26ZHENGZHOU UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHENGZHOU UNIV
Filing Date
2024-11-01
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Traditional digital computers are inefficient at handling complex computational tasks, and existing electronic devices cannot simulate the efficient synaptic connections and plasticity of the biological brain, which limits the development of artificial synapses and neuromorphic computing.

Method used

Benzotriazine radical compounds were prepared and applied to organic memristors and artificial synapses. By controlling the charge or current, the synaptic strength was adjusted to simulate the connection and learning mechanism between neurons.

Benefits of technology

This achievement enables preliminary simulation of artificial synapses, improves the stability and flexibility of electronic devices, and provides solutions for future memory and brain-inspired computing technologies.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention belongs to the field of organic semiconductor material synthesis and application technology, specifically relating to a benzotriazine radical compound, its preparation method, and its application in organic memristors and artificial synapses. The benzotriazine radical compound prepared by this invention possesses magnetic properties and good thermal stability, enabling it to withstand thermal degradation in memory devices. It can be used to prepare magnetic materials or electronic devices such as organic memristors or artificial synapses. The prepared organic memristors exhibit low threshold voltage and good device stability; the prepared organic artificial synapses possess synaptic plasticity and a low threshold voltage, conforming to the low-energy consumption characteristics of biological synapses.
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