Stripper composition and method for stripping photoresist

Abstract

The invention provides a stripping agent composition and a method for stripping a photoresist, wherein the stripping agent composition has good stripping performance and can inhibit corrosion of a lower contact surface during stripping of the photoresist. The stripping agent composition comprises an ether alcohol organic solvent (A), another organic solvent (B), an alkaline substance (C), a substrate corrosion inhibitor (D) and water (E). The other organic solvent (B) does not include an ether alcohol organic solvent. The alkaline substance (C) includes an organic base (C1), an inorganic base (C2), or a combination thereof. Based on 100 parts by weight of the total usage amount of the stripping agent composition, the usage amount of the ether alcohol organic solvent (A) is 7-70 parts by weight, and the usage amount of the base material corrosion inhibitor (D) is more than 0 part by weight and less than 18 parts by weight.

Description

Technical Field

[0001] The invention relates to a stripping agent composition, and in particular to a stripping agent composition and a method for stripping photoresist. Background Art

[0002] The current stripper composition usually includes alkanolamine, so that the photoresist can be stripped from the substrate by the stripper composition under high temperature environment. However, during the stripping of the photoresist, the alkanolamine will corrode the film layer on the substrate that contacts the photoresist, thereby affecting the performance of the semiconductor device made using the photoresist. Therefore, a method that can solve the above-mentioned problem is urgently needed. Summary of the invention

[0003] The present invention is directed to a stripper composition and a method for stripping photoresist that can form a stripper composition having good stripping properties and inhibiting corrosion of a lower contact surface during stripping of the photoresist.

[0004] According to an embodiment of the present invention, the stripper composition includes an ether alcohol organic solvent (A), other organic solvents (B), an alkaline substance (C), a substrate corrosion inhibitor (D) and water (E). The other organic solvent (B) does not include an ether alcohol organic solvent. The alkaline substance (C) includes an organic base (C1), an inorganic base (C2) or a combination thereof. Based on the total amount of the stripper composition used being 100 parts by weight, the amount of the ether alcohol organic solvent (A) used is 7 parts by weight to 70 parts by weight, and the amount of the substrate corrosion inhibitor (D) used is greater than 0 parts by weight and less than 18 parts by weight.

[0005] In the stripping agent composition according to an embodiment of the present invention, the ether alcohol organic solvent (A) includes ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol butyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether or a combination thereof.

[0006] In the stripping agent composition according to an embodiment of the present invention, the other organic solvent (B) includes 1,3-dimethyl-2-imidazolidinone, cyclopentane sulfone, dimethyl sulfoxide, propylene glycol methyl ether acetate, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-butyl-2-pyrrolidone, dimethylformamide, dimethylacetamide, benzyl alcohol, butanol, butyrolactone, octanone, butanone, methyl benzoate or a combination thereof.

[0007] In the stripping agent composition according to an embodiment of the present invention, the organic base (C1) includes tetramethylammonium hydroxide, tetraethylammonium hydroxide or a combination thereof, and the inorganic base (C2) includes potassium hydroxide, sodium hydroxide or a combination thereof.

[0008] In the stripping agent composition according to the embodiment of the present invention, the alkaline substance (C) includes the organic base (C1) and the inorganic base (C2).

[0009] In the stripper composition according to an embodiment of the present invention, the alkaline substance (C) includes an organic base (C1) and an inorganic base (C2). Based on 100 parts by weight of the total amount of the stripper composition, the amount of the organic base (C1) is 0.2 to 5 parts by weight, and the amount of the inorganic base (C2) is 0.5 to 3 parts by weight.

[0010] In the stripper composition according to an embodiment of the present invention, the substrate corrosion inhibitor (D) includes glycerol, ethylene glycol, polyvinyl pyrrolidone, 2-mercaptobenzimidazole, polyethylene glycol, propylene glycol or a combination thereof.

[0011] In the stripper composition according to an embodiment of the present invention, the substrate corrosion inhibitor (D) includes glycerin, and the amount of glycerin used is greater than or equal to 1 part by weight and less than 4 parts by weight based on 100 parts by weight of the total amount of the stripper composition used.

[0012] The stripping agent composition according to the embodiment of the present invention further comprises alkanolamine (F). Based on 100 parts by weight of the total amount of the stripping agent composition, the amount of alkanolamine (F) is 0 parts by weight to 7 parts by weight.

[0013] The stripping agent composition according to the embodiment of the present invention further comprises alkanolamine (F). The alkanolamine (F) comprises ethanolamine, triethanolamine, diethanolamine, isopropanolamine or a combination thereof.

[0014] In the stripping agent composition according to an embodiment of the present invention, the total amount of the stripping agent composition used is 100 parts by weight, the amount of other organic solvents (B) used is 10 parts by weight to 80 parts by weight, the amount of alkaline substances (C) used is 0.2 parts by weight to 7.5 parts by weight, and the amount of water (E) used is 0.2 parts by weight to 7.5 parts by weight.

[0015] According to an embodiment of the present invention, a method for stripping a photoresist includes immersing a substrate containing the photoresist in the above-mentioned stripper composition.

[0016] Based on the above, the stripper composition of the present invention includes an ether alcohol organic solvent (A), other organic solvents (B), an alkaline substance (C), a substrate corrosion inhibitor (D) and water (E), and based on the total amount of the stripper composition used being 100 parts by weight, the amount of the ether alcohol organic solvent (A) used is 7 parts by weight to 70 parts by weight, and the amount of the substrate corrosion inhibitor (D) used is greater than 0 parts by weight and less than 18 parts by weight. Thus, the stripper composition can have good stripping properties, and can inhibit the corrosion of the lower contact surface during the stripping of the photoresist, and is suitable for stripping the photoresist.

[0017] In order to make the above features and advantages of the present invention more obvious and easy to understand, embodiments are specifically described in detail below. DETAILED DESCRIPTION

[0018] <Removal Agent Composition>

[0019] The present invention provides a stripper composition, comprising an ether alcohol organic solvent (A), other organic solvents (B), an alkaline substance (C), a substrate corrosion inhibitor (D) and water (E). In addition, the stripper composition of the present invention may further comprise an alkanolamine (F) or other suitable additives as required. The above-mentioned various components will be described in detail below.

[0020] Ether alcohol organic solvent (A)

[0021] Ether alcohol organic solvent (A) has no particular restrictions, and appropriate ether alcohol organic solvent can be selected according to demand. In the present embodiment, ether alcohol organic solvent (A) can include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol butyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, its combination or other suitable ether alcohol organic solvent, preferably diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether or its combination. Ether alcohol organic solvent (A) can be used alone or in combination.

[0022] When the stripper composition includes an ether alcohol organic solvent (A), the ether alcohol organic solvent (A) helps to improve the ability of the stripper composition to inhibit corrosion of the lower contact surface (such as the surface of the metal layer and / or the substrate) during stripping of the photoresist, so that the stripper composition can have a better ability to inhibit corrosion of the lower contact surface during stripping of the photoresist.

[0023] Based on 100 parts by weight of the total amount of the stripping agent composition, the amount of the ether alcohol organic solvent (A) is 7 parts by weight to 70 parts by weight, preferably 10 parts by weight to 68 parts by weight.

[0024] When the usage amount of the ether alcohol organic solvent (A) in the stripper composition is within the above range, the ether alcohol organic solvent (A) helps to improve the ability of the stripper composition to inhibit corrosion of the lower contact surface (such as the surface of the substrate) during the stripping of the photoresist, so that the stripper composition can have a better ability to inhibit corrosion of the lower contact surface during the stripping of the photoresist.

[0025] Other organic solvents (B)

[0026] Other organic solvents (B) do not include ether alcohol organic solvents. In the present embodiment, other organic solvents (B) may include 1,3-dimethyl-2-imidazolidinone, cyclopentane sulfone, dimethyl sulfoxide, propylene glycol methyl ether acetate, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-butyl-2-pyrrolidone, dimethylformamide, dimethylacetamide, benzyl alcohol, butanol, butyrolactone, octanone, butanone, methyl benzoate, combinations thereof or other suitable organic solvents other than ether alcohol organic solvents, preferably 1,3-dimethyl-2-imidazolidinone, cyclopentane sulfone or a combination thereof. Other organic solvents (B) can be used alone or in combination.

[0027] Based on 100 parts by weight of the total amount of the stripping agent composition, the amount of the other organic solvent (B) is 10 parts by weight to 80 parts by weight, preferably 15 parts by weight to 76 parts by weight.

[0028] When the stripper composition includes other organic solvents (B), the other organic solvents (B) help to enhance the swelling property (the photoresist may swell due to absorption of the organic solvent (B), thereby making it easier to strip) and solubility (the photoresist may be dissolved by the organic solvent (B)) of the stripper composition when stripping the photoresist, so that the stripper composition can have better photoresist stripping properties.

[0029] Alkaline substances (C)

[0030] The alkaline substance (C) includes an organic base (C1), an inorganic base (C2) or a combination thereof. The alkaline substance (C) may further include other suitable alkaline substances. The alkaline substance (C) may be used alone or in combination of multiple substances.

[0031] There is no particular limitation on the organic base (C1), and an appropriate organic base can be selected according to the requirements. In the present embodiment, the organic base (C1) can include tetramethylammonium hydroxide, tetraethylammonium hydroxide, a combination thereof, or other suitable organic bases, preferably tetraethylammonium hydroxide. The organic base (C1) can be used alone or in combination.

[0032] Based on 100 parts by weight of the total amount of the stripping agent composition, the amount of the organic base (C1) is 0.2 parts by weight to 5 parts by weight, preferably 0.25 parts by weight to 4 parts by weight.

[0033] There is no particular limitation on the inorganic base (C2), and an appropriate inorganic base can be selected according to the requirements. In the present embodiment, the inorganic base (C2) can include potassium hydroxide, sodium hydroxide, a combination thereof, or other suitable inorganic bases, preferably potassium hydroxide. The inorganic base (C2) can be used alone or in combination.

[0034] Based on 100 parts by weight of the total amount of the stripping agent composition, the amount of the inorganic base (C2) is 0.5 parts by weight to 3 parts by weight, preferably 1.25 parts by weight to 2.25 parts by weight.

[0035] When the stripper composition includes the alkaline substance (C), the alkaline substance (C) helps to break the main chain bonds of the macromolecules in the photoresist, so that the stripper composition can have better photoresist stripping properties.

[0036] In this embodiment, the alkaline substance (C) preferably includes an organic base (C1) and an inorganic base (C2). When the alkaline substance (C) in the stripper composition includes both the organic base (C1) and the inorganic base (C2), the alkaline substance (C) helps to improve the stripping property of the stripper composition, especially helps to improve the stripping property of the stripper composition for thicker photoresists (e.g., 100 microns to 350 microns), so that the stripper composition can have better stripping property when stripping thicker photoresists.

[0037] Based on 100 parts by weight of the total amount of the stripping agent composition, the amount of the alkaline substance (C) is 0.2 parts by weight to 7.5 parts by weight, preferably 1 part by weight to 4 parts by weight.

[0038] Substrate corrosion inhibitor (D)

[0039] There is no particular limitation on the substrate corrosion inhibitor (D), and an appropriate substrate corrosion inhibitor can be selected according to the requirements. In the present embodiment, the substrate corrosion inhibitor (D) may include glycerol, ethylene glycol, polyvinyl pyrrolidone, 2-mercaptobenzimidazole, polyethylene glycol, propylene glycol, a combination thereof or other suitable substrate corrosion inhibitors, preferably glycerol, ethylene glycol, polyvinyl pyrrolidone, 2-mercaptobenzimidazole or a combination thereof, and more preferably glycerol. The substrate corrosion inhibitor (D) may be used alone or in combination of multiple types.

[0040] When the stripper composition includes a substrate corrosion inhibitor (D), the substrate corrosion inhibitor (D) helps improve the corrosion resistance of the stripper composition, so that the stripper composition can have better corrosion resistance when stripping thicker photoresists (e.g., 100 μm to 350 μm). When the stripper composition includes a substrate corrosion inhibitor (D), the substrate corrosion inhibitor (D) helps improve the ability of the stripper composition to inhibit corrosion of the lower contact surface (e.g., the surface of the metal layer and the substrate) during stripping of the photoresist, so that the stripper composition can have better ability to inhibit corrosion of the lower contact surface during stripping of the photoresist.

[0041] In the present embodiment, the substrate corrosion inhibitor (D) may include glycerol. Based on the total usage of the stripper composition being 100 parts by weight, the usage of glycerol is 1 part by weight to 12 parts by weight, preferably greater than or equal to 1 part by weight and less than 4 parts by weight. When the usage of glycerol included in the substrate corrosion inhibitor (D) in the stripper composition is within the above preferred range, the substrate corrosion inhibitor (D) can also help improve the stripping property of the stripper composition, especially help improve the stripping property of the stripper composition for photoresists above 280 microns, so that the stripper composition can have better stripping property when stripping photoresists above 280 microns.

[0042] Based on 100 parts by weight of the total amount of the stripper composition, the amount of the substrate corrosion inhibitor (D) is greater than 0 parts by weight and less than 18 parts by weight, preferably 5 parts by weight to 17 parts by weight.

[0043] When the usage amount of the substrate corrosion inhibitor (D) in the stripper composition is within the above range, the substrate corrosion inhibitor (D) helps to improve the corrosion resistance of the stripper composition, so that the stripper composition can have better corrosion resistance when stripping thicker photoresists.

[0044] Water (E)

[0045] There is no particular limitation on water (E), and appropriate water can be selected according to needs. For example, water (E) can include pure water, ultrapure water, deionized water or other suitable water, preferably ultrapure water.

[0046] Based on 100 parts by weight of the total amount of the stripping agent composition, the amount of water (E) used is 0.2 parts by weight to 7.5 parts by weight, preferably 0.4 parts by weight to 7.5 parts by weight.

[0047] When the stripper composition includes water (E), the water (E) helps to improve the solubility of the stripper composition, so that the stripper composition can have better homogeneity.

[0048] Alkanolamine(F)

[0049] There is no particular limitation on the alkanolamine (F), and an appropriate alkanolamine can be selected according to the requirements. In the present embodiment, the alkanolamine (F) can include ethanolamine, triethanolamine, diethanolamine, isopropanolamine, a combination thereof or other suitable alkanolamines, preferably ethanolamine, triethanolamine or a combination thereof. The alkanolamine (F) can be used alone or in combination of multiple types.

[0050] Based on 100 parts by weight of the total amount of the stripping agent composition, the amount of the alkanolamine (F) is 0 to 7 parts by weight, preferably 0 to 3 parts by weight or 1 to 3 parts by weight.

[0051] When the stripper composition includes alkanolamine (F), the alkanolamine (F) helps to improve the solubility of the residual photoresist, so that the stripper composition can have better solubility for the photoresist.

[0052] <Preparation Method of Stripping Agent Composition>

[0053] There is no particular limitation on the method for preparing the stripper composition. For example, an ether alcohol organic solvent (A), other organic solvents (B), alkaline substances (C), substrate corrosion inhibitors (D) and water (E) are placed in a stirrer and stirred to uniformly mix them into a solution state. Alkanolamine (F) or other suitable additives may also be added if necessary. After uniform mixing, a liquid stripper composition can be obtained.

[0054] <Method of stripping photoresist>

[0055] An exemplary embodiment of the present invention provides a method for stripping a photoresist, comprising immersing a substrate containing the photoresist in the stripper composition described above.

[0056] The substrate may be a glass substrate, a silicon wafer substrate or other suitable base materials that are resistant to corrosion by alkaline substances.

[0057] The photoresist may be a positive photoresist or a negative photoresist. The material of the photoresist may include a resin, a photosensitizer, and a solvent. The resin included in the positive photoresist may include a phenolic resin or other suitable materials. The resin included in the negative photoresist may include an acrylic resin or other suitable materials.

[0058] A metal layer may be formed on the uppermost layer of one surface of the substrate, and the material of the metal layer may include copper or other suitable metals.

[0059] Hereinafter, the present invention will be described in detail with reference to examples. The following examples are provided for describing the present invention, and the scope of the present invention includes the scope described in the following claims and its substitutes and modifications, and is not limited to the scope of the examples.

[0060] Examples of Stripping Agent Compositions

[0061] The following describes Examples 1 to 11 and Comparative Examples 1 to 5 of the stripping agent composition:

[0062] Example 1

[0063] 14 parts by weight of diethylene glycol monoethyl ether, 1.5 parts by weight of tetraethylammonium hydroxide, 1.5 parts by weight of potassium hydroxide, 1 part by weight of glycerol, 9 parts by weight of ethylene glycol, 0.5 parts by weight of polyvinyl pyrrolidone and 4.6 parts by weight of water are added to a mixed solvent formed by 30 parts by weight of 1,3-dimethyl-2-imidazolidinone and 37.9 parts by weight of cyclopentane sulfone, and stirred evenly with a stirrer to obtain the stripping agent composition of Example 1.

[0064] Examples 2 to 11 and Comparative Examples 1 to 5

[0065] The stripping agent compositions of Examples 2 to 11 and Comparative Examples 1 to 5 were prepared in the same steps as Example 1, and the difference was that the types of components and the amounts used of the stripping agent compositions were changed (as shown in Table 1). The prepared stripping agent compositions were evaluated in the following evaluation methods, and the results are shown in Table 2.

[0066] [Table 1]

[0067]

[0068] [Table 2]

[0069]

[0070]

[0071] [Table 2] (Continued)

[0072]

[0073]

[0074] <Evaluation method>

[0075] a. Copper corrosion resistance

[0076] The substrate with a copper layer plated on the surface was immersed in each stripper composition prepared in the embodiment and the comparative example, and immersed at a temperature of 70°C for 70 minutes. Then, the immersed copper layer substrate was cleaned with deionized water and isopropyl alcohol. Then, the etching rate of the copper layer conductor on the substrate was detected using the four-point probe principle. The measurement method of the four-point probe (model LRS4-TG1, manufactured by KeithLink Technology Co., Ltd.) is to add a fixed current between two of the probes, and at the same time measure the voltage difference between the other two probes to calculate the sheet resistance. Then, the thickness change of the copper layer is calculated by the conventional formula to calculate the copper corrosion rate, and the copper corrosion resistance is evaluated. When the copper corrosion rate is slower, it shows that the stripper composition has a good ability to inhibit the surface corrosion of the copper layer during the stripping of the photoresist.

[0077] The evaluation criteria for copper corrosion resistance are as follows:

[0078] ◎: Copper corrosion rate <0.2 angstroms / minute

[0079] ○: 0.2 angstroms / minute ≦ copper corrosion rate < 2 angstroms / minute;

[0080] △: 2 angstroms / minute ≤ copper corrosion rate < 10 angstroms / minute;

[0081] ╳: 10 angstroms / minute ≦ copper corrosion rate.

[0082] b. Silicon corrosion resistance

[0083] The silicon substrate was immersed in each stripper composition prepared in the embodiment and the comparative example, and immersed at a temperature of 70°C for 70 minutes. Then, the immersed silicon substrate was cleaned with deionized water and isopropyl alcohol, and the silicon substrate was observed with the naked eye to see if it was corroded to evaluate the silicon corrosion resistance. The smaller the degree of corrosion / fogging on the surface of the silicon substrate, the better the stripper composition has the ability to inhibit the corrosion of the silicon substrate during the photoresist stripping period.

[0084] The evaluation criteria for silicon corrosion resistance are as follows:

[0085] ◎: The silicon substrate is not corroded;

[0086] △: The surface of the silicon substrate is partially atomized;

[0087] ╳: The surface of the silicon substrate is completely atomized.

[0088] c. Anti-PI corrosion

[0089] The substrate coated with a polyimide (PI) layer was immersed in each stripper composition prepared in the embodiment and the comparative example, and immersed at a temperature of 70°C for 70 minutes. Then, the immersed substrate coated with a polyimide layer was cleaned with deionized water and isopropyl alcohol. Then, the thickness of the polyimide layer on the cleaned substrate coated with a polyimide layer was measured by a film thickness meter (model Dektak 8, manufactured by Veeco Instruments Inc.) to calculate the corrosion rate of the polyimide layer and evaluate the PI corrosion resistance. When the PI corrosion rate is slower, it shows that the stripper composition has a good ability to inhibit the corrosion of the polyimide layer during the stripping of the photoresist.

[0090] The evaluation criteria for PI corrosion resistance are as follows:

[0091] ◎: PI corrosion rate <0.03 μm / min;

[0092] ○: 0.03 μm / min ≦ PI corrosion rate < 0.06 μm / min;

[0093] △: 0.06 microns / minute ≦ PI corrosion rate < 0.14 microns / minute;

[0094] ╳: 0.14 μm / min ≦PI corrosion rate.

[0095] d. Photoresist stripping

[0096] A substrate containing a photoresist (having a thickness of 120 μm and / or 280 μm, for example, a negative photoresist) was immersed in each stripper composition prepared in the Examples and Comparative Examples at a temperature of 70° C. for 70 minutes. Then, the immersed substrate was cleaned with deionized water and isopropyl alcohol. Then, the cleaned substrate was observed by a metallographic microscope (model Nikon LV150N, Nikon Corporation) to see if there was any photoresist residue on the substrate to evaluate the stripping property. The higher the ratio of the photoresist stripped from the substrate, the better the stripping property of the stripper composition.

[0097] The evaluation criteria for photoresist stripping are as follows:

[0098] ◎: The photoresist is completely peeled off from the substrate;

[0099] ○: 97%<the ratio of photoresist peeling off from the substrate<100%;

[0100] △: 90%<the ratio of photoresist peeling off from the substrate ≤ 97%;

[0101] ╳: The proportion of photoresist peeled off from the substrate is ≤ 90%.

[0102] <Evaluation Results>

[0103] As can be seen from Table 2, when the stripper composition includes an ether alcohol organic solvent (A), other organic solvents (B), an alkaline substance (C), a substrate corrosion inhibitor (D) and water (E), and based on the total usage of the stripper composition being 100 parts by weight, the usage of the ether alcohol organic solvent (A) is 7 parts by weight to 70 parts by weight, and the usage of the substrate corrosion inhibitor (D) is greater than 0 parts by weight and less than 18 parts by weight (Examples 1 to 11), the stripper has both good stripping properties and the ability to inhibit corrosion of the lower contact surface during stripping of the photoresist, and can be used for stripping the photoresist.

[0104] In addition, compared with the stripper composition in which the amount of the substrate corrosion inhibitor (D) is not within the range of greater than 0 parts by weight and less than 18 parts by weight (Comparative Examples 1-2), the stripper composition in which the amount of the substrate corrosion inhibitor (D) is within the range of greater than 0 parts by weight and less than 18 parts by weight (Examples 1-11) has better stripping properties. It can be seen that when the amount of the substrate corrosion inhibitor (D) is greater than 0 parts by weight and less than 18 parts by weight, the substrate corrosion inhibitor (D) within the specific amount range can improve the ratio of the stripper composition to strip the photoresist from the substrate, so that the stripper composition can have better stripping properties and at the same time have a good ability to inhibit the corrosion of the lower contact surface during the stripping of the photoresist.

[0105] Compared with the stripper composition in which the amount of the ether alcohol organic solvent (A) is not within the range of 7 to 70 parts by weight (Comparative Example 3), the stripper composition in which the amount of the ether alcohol organic solvent (A) is within the range of 7 to 70 parts by weight (Examples 1 to 11) has better resistance to PI corrosion. It can be seen that when the amount of the ether alcohol organic solvent (A) is 7 to 70 parts by weight, the ether alcohol organic solvent (A) within the specific amount range can improve the ability of the stripper composition to inhibit the corrosion of the polyimide layer during the stripping of the photoresist, so that the stripper composition can have a better ability to inhibit the corrosion of the lower contact surface during the stripping of the photoresist, and at the same time have good stripping properties.

[0106] In addition, compared to the stripper composition not including the ether alcohol organic solvent (A) (Comparative Examples 4-5), the stripper composition including the ether alcohol organic solvent (A) (Examples 1-11) has better copper corrosion resistance, silicon corrosion resistance and / or PI corrosion resistance. It can be seen that when the stripper composition includes the ether alcohol organic solvent (A), the ether alcohol organic solvent (A) can improve the ability of the stripper composition to inhibit corrosion of the copper layer, polyimide layer and / or silicon substrate surface during stripping of the photoresist, so that the stripper composition can have better ability to inhibit corrosion of the lower contact surface during stripping of the photoresist, and at the same time have good stripping properties.

[0107] In addition, compared to the stripper composition not including the substrate corrosion inhibitor (D) (Comparative Example 5), the stripper composition including the substrate corrosion inhibitor (D) (Examples 1 to 11) has better copper corrosion resistance, silicon corrosion resistance and PI corrosion resistance. It can be seen that when the stripper composition includes the substrate corrosion inhibitor (D), the substrate corrosion inhibitor (D) can improve the corrosion resistance of the stripper composition, so that the stripper composition can have better corrosion resistance when stripping the photoresist, and at the same time has good stripping properties.

[0108] In addition, compared to the stripper composition in which the alkaline substance (C) does not include the combination of the organic base (C1) and the inorganic base (C2) (Examples 7-11), the stripper composition in which the alkaline substance (C) includes the combination of the organic base (C1) and the inorganic base (C2) (Examples 1-6) has better 280 micron photoresist stripping performance. It can be seen that when the alkaline substance (C) in the stripper composition includes the combination of the organic base (C1) and the inorganic base (C2), the alkaline substance (C) can improve the ratio of the stripper composition to strip the photoresist from the substrate, and in particular, can improve the stripping performance of the stripper composition for thicker photoresist (e.g., 100 microns to 350 microns), so that the stripper composition can have better stripping performance, and at the same time have a good ability to inhibit corrosion of the lower contact surface during the stripping of the photoresist.

[0109] In addition, compared to the stripper composition in which the substrate corrosion inhibitor (D) includes glycerol, but the amount of glycerol used is not in the range of greater than or equal to 1 part by weight and less than 4 parts by weight (Examples 7 to 11), the stripper composition in which the substrate corrosion inhibitor (D) includes glycerol and the amount of glycerol used is greater than or equal to 1 part by weight and less than 4 parts by weight (Examples 1 to 6) has better 280 μm photoresist stripping performance. It can be seen that when the substrate corrosion inhibitor (D) in the stripper composition includes glycerol and the amount of glycerol used is greater than or equal to 1 part by weight and less than 4 parts by weight, the substrate corrosion inhibitor (D) can improve the ratio of the stripper composition to strip the photoresist from the substrate, and in particular, can improve the stripping performance of the stripper composition for thicker photoresist (e.g., 100 μm to 350 μm), so that the stripper composition can have better stripping performance and at the same time have a good ability to inhibit corrosion of the lower contact surface during the stripping of the photoresist.

[0110] In summary, the stripper composition of the present invention includes an ether alcohol organic solvent (A), other organic solvents (B), an alkaline substance (C), a substrate corrosion inhibitor (D) and water (E), and based on the total usage of the stripper composition being 100 parts by weight, the usage of the ether alcohol organic solvent (A) is 7 parts by weight to 70 parts by weight, and the usage of the substrate corrosion inhibitor (D) is greater than 0 parts by weight and less than 18 parts by weight, so that the stripper composition has both good stripping properties and can inhibit the corrosion of the lower contact surface during the stripping of the photoresist, and can be used for stripping photoresist, and further for manufacturing semiconductor devices and can improve the performance of semiconductor devices manufactured using the stripper composition.

[0111] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A stripping agent composition, characterized in that: include: Ether alcohol organic solvent (A); Other organic solvents (B), wherein the other organic solvents (B) do not include ether alcohol organic solvents; Alkaline substances (C) include organic bases (C1), inorganic bases (C2) or combinations thereof; substrate corrosion inhibitor (D); and Water (E), Based on the total usage of the stripping agent composition being 100 parts by weight, the usage of the ether alcohol organic solvent (A) is 7 parts by weight to 70 parts by weight, and the usage of the substrate corrosion inhibitor (D) is greater than 0 parts by weight and less than 18 parts by weight.

2. The stripping agent composition according to claim 1, characterized in that: The ether alcohol organic solvent (A) includes ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol butyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether or a combination thereof.

3. The stripping agent composition according to claim 1, characterized in that: The other organic solvents (B) include 1,3-dimethyl-2-imidazolidinone, cyclopentane sulfone, dimethyl sulfoxide, propylene glycol methyl ether acetate, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-butyl-2-pyrrolidone, dimethylformamide, dimethylacetamide, benzyl alcohol, butanol, butyrolactone, octanone, butanone, methyl benzoate or a combination thereof.

4. The stripping agent composition according to claim 1, characterized in that: The organic base (C1) includes tetramethylammonium hydroxide, tetraethylammonium hydroxide or a combination thereof, and the inorganic base (C2) includes potassium hydroxide, sodium hydroxide or a combination thereof.

5. The stripping agent composition according to claim 1, characterized in that: The alkaline substance (C) includes the organic base (C1) and the inorganic base (C2).

6. The stripping agent composition according to claim 1, characterized in that: The alkaline substance (C) includes the organic base (C1) and the inorganic base (C2), and based on the total usage of the stripping agent composition being 100 parts by weight, the usage of the organic base (C1) is 0.2 parts by weight to 5 parts by weight, and the usage of the inorganic base (C2) is 0.5 parts by weight to 3 parts by weight.

7. The stripping agent composition according to claim 1, characterized in that: The substrate corrosion inhibitor (D) includes glycerol, ethylene glycol, polyvinyl pyrrolidone, 2-mercaptobenzimidazole, polyethylene glycol, propylene glycol or a combination thereof.

8. The stripping agent composition according to claim 1, characterized in that: The substrate corrosion inhibitor (D) includes glycerin, and based on 100 parts by weight of the total amount of the stripper composition, the amount of glycerin is greater than or equal to 1 part by weight and less than 4 parts by weight.

9. The stripping agent composition according to claim 1, characterized in that: The composition further comprises an alkanolamine (F), wherein the amount of the alkanolamine (F) is 0 to 7 parts by weight based on 100 parts by weight of the total amount of the stripping agent composition.

10. The stripping agent composition according to claim 1, characterized in that: Also included is an alkanolamine (F), wherein the alkanolamine (F) includes ethanolamine, triethanolamine, diethanolamine, isopropanolamine, or a combination thereof.

11. The stripping agent composition according to claim 1, characterized in that: Based on the total usage of the stripping agent composition being 100 parts by weight, the usage of the other organic solvent (B) is 10 parts by weight to 80 parts by weight, the usage of the alkaline substance (C) is 0.2 parts by weight to 7.5 parts by weight, and the usage of the water (E) is 0.2 parts by weight to 7.5 parts by weight.

12. A method for stripping a photoresist, characterized in that: include: The substrate containing the photoresist is immersed in the stripper composition according to any one of claims 1 to 11.

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