Thermal resistance testing method, device and equipment of gallium nitride high electron mobility transistor and medium

Abstract

The invention discloses a thermal resistance testing method, device and equipment for a gallium nitride high-electron-mobility transistor and a medium. The thermal resistance testing method comprises the following steps: acquiring an electrical parameter signal of the gallium nitride high-electron-mobility transistor to be tested under a preset modulation pulse width pulse signal; the electrical parameter signals comprise voltage signals and current signals; determining the electrical parameter signals meeting the preset turn-off interval as target sample data; obtaining the sub-threshold swing of the target sample data; and determining the thermal resistance of the gallium nitride high electron mobility transistor to be tested according to the sub-threshold swing of the target sample data. By adopting the technical means, the thermal resistance of the transistor is detected by presetting the modulation pulse width pulse signal and the sub-threshold swing, additional measurement pulses are not needed, measurement pulse delay errors do not exist, and the detection precision of the thermal resistance is high.

Description

Technical Field

[0001] The present invention relates to the field of transistor technology, and in particular to a method, device, equipment and medium for testing the thermal resistance of a gallium nitride high electron mobility transistor. Background Art

[0002] In power electronics applications, the voltage and current that the switching devices need to carry are relatively high, and the resulting heating effect power is also high. Therefore, the switching devices in power electronics applications often need to carry a large power under high temperature conditions. However, excessive temperature has a negative impact on the operation of devices and circuit systems. On the one hand, key electrical properties such as switching characteristics and volt-ampere characteristics will drift with temperature, making the control effect during actual operation inconsistent with expectations; secondly, long-term high-temperature working conditions may cause the accumulation of defect states at the film interface, and may form permanent carrier traps under the action of the electric field, causing the device to age faster; at the same time, high temperature conditions may change the breakdown characteristics of the device, causing the device to burn out. Therefore, it is necessary to characterize the thermal impedance characteristics of the device and establish an accurate thermal resistance model as a basis for circuit thermal management under working conditions.

[0003] At present, in the process of detecting thermal resistance, the fluctuation of ambient temperature and the delay of pulse measurement will affect the detection accuracy of thermal resistance. Summary of the invention

[0004] The invention provides a method for testing the thermal resistance of a gallium nitride high electron mobility transistor to improve the detection accuracy of the thermal resistance.

[0005] In a first aspect, an embodiment of the present invention provides a method for testing thermal resistance of a gallium nitride high electron mobility transistor, comprising:

[0006] Acquire an electrical parameter signal of a GaN high electron mobility transistor to be tested under a preset modulated pulse width pulse signal; the electrical parameter signal includes a voltage signal and a current signal;

[0007] Determining the electrical parameter signal that meets the preset shut-off interval as the target sample data;

[0008] Acquire a subthreshold swing of the target sample data;

[0009] The thermal resistance of the GaN high electron mobility transistor to be tested is determined according to the subthreshold swing of the target sample data.

[0010] In a second aspect, an embodiment of the present invention further provides a thermal resistance testing device for a gallium nitride high electron mobility transistor, comprising:

[0011] An electrical parameter signal acquisition module, used to acquire an electrical parameter signal of a GaN high electron mobility transistor to be tested under a preset modulated pulse width pulse signal; the electrical parameter signal includes a voltage signal and a current signal;

[0012] A target sample data determination module, used to determine an electrical parameter signal that meets a preset shut-off interval as target sample data;

[0013] A subthreshold swing acquisition module, used to acquire the subthreshold swing of the target sample data;

[0014] The thermal resistance determination module is used to determine the thermal resistance of the GaN high electron mobility transistor to be tested according to the subthreshold swing of the target sample data.

[0015] In a third aspect, an embodiment of the present invention further provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the method described in the first aspect of the embodiment of the present invention is implemented.

[0016] In a fourth aspect, an embodiment of the present invention further provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the method described in the first aspect of the embodiment of the present invention.

[0017] The technical solution provided by the embodiment of the present invention obtains the electrical parameter signal of the GaN high electron mobility transistor to be tested under a preset modulated pulse width pulse signal; the electrical parameter signal includes a voltage signal and a current signal; the electrical parameter signal that satisfies the preset turn-off interval is determined as the target sample data, and the thermal resistance of the GaN high electron mobility transistor to be tested can be determined by obtaining the subthreshold swing of the target sample data. In this way, in the process of detecting the thermal resistance, there is no need to consider the fluctuation of the external environment temperature, and there is no need to add additional measurement pulses, and there is no measurement pulse delay error, thereby improving the detection accuracy of the thermal resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the structure of a gallium nitride high electron mobility transistor in the prior art;

[0019] Figure 2 for Figure 1 Corresponding schematic diagram of junction temperature simulation of GaN high electron mobility transistor;

[0020] Figure 3 A schematic diagram showing the effect of ambient temperature on thermal resistance test results in a thermal resistance measurement method for a gallium nitride high electron mobility transistor provided in the prior art;

[0021] Figure 4A schematic diagram of the results of normalizing parameters under different time delay conditions in a thermal resistance measurement method of a gallium nitride high electron mobility transistor provided in the prior art;

[0022] Figure 5 It is a schematic diagram of comparing error rates under different delays in the prior art;

[0023] Figure 6 A schematic flow chart of a first method for testing thermal resistance of a gallium nitride high electron mobility transistor provided by an embodiment of the present invention;

[0024] Figure 7 A schematic diagram of a thermal resistance curve of a gallium nitride high electron mobility transistor provided in an embodiment of the present invention;

[0025] Figure 8 A schematic diagram of impedance response of a gallium nitride high electron mobility transistor provided by an embodiment of the present invention;

[0026] Fig. 9 A thermal resistance response characteristic curve of a gallium nitride high electron mobility transistor under different drain load current conditions provided by an embodiment of the present invention;

[0027] Fig.10 for Fig. 9 Characterization results of the corresponding linear relationship between thermal resistance and drain load current;

[0028] Fig.11 A schematic diagram of the structure of an electrical parameter signal acquisition module in a thermal resistance testing device for a gallium nitride high electron mobility transistor provided by an embodiment of the present invention;

[0029] Fig.12 for Fig.11 Schematic diagram of the error caused by the corresponding power source noise amplitude;

[0030] Fig.13 for Fig.11 The corresponding error diagram caused by ambient temperature fluctuations;

[0031] Fig.14 A schematic flow chart of a second method for testing the thermal resistance of a gallium nitride high electron mobility transistor provided by an embodiment of the present invention;

[0032] Fig.15 A schematic flow chart of a third method for testing the thermal resistance of a gallium nitride high electron mobility transistor provided in an embodiment of the present invention;

[0033] Fig.16 A schematic structural diagram of a thermal resistance testing device for a gallium nitride high electron mobility transistor provided by an embodiment of the present invention;

[0034] Fig.17A schematic diagram of the structure of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0035] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0036] It should be noted that the terms "including" and "having" and any variations thereof in the specification and claims of the present invention and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or apparatuses.

[0037] Before describing in detail the technical solutions of the embodiments of the present invention, the technical solutions in the prior art are described first.

[0038] GaN high electron mobility transistors have attracted widespread attention in the field of power transmission and high power radiation due to their outstanding characteristics compared to Si, GaAs and SiC devices. It provides a large direct bandgap, ensuring reliable operation in harsh environments such as high temperature and radiation exposure. In addition, the high critical field strength of GaN enables it to remain functional at high power density and high frequency. Therefore, GaN high electron mobility transistors are widely used in the field of power electronics as switching devices. Figure 1 is a schematic diagram of the structure of a gallium nitride high electron mobility transistor in the prior art, Figure 2 for Figure 1 The corresponding schematic diagram of the junction temperature simulation of the GaN high electron mobility transistor is shown in Figure 1 and Figure 2 As shown, the junction temperature center of the transistor is mainly concentrated in the central area of ​​GaN and AlGaN.

[0039] At present, GaN high electron mobility transistors on the market have achieved an output power density of 40W / mm at a switching frequency of 300GHz. Therefore, the widespread application of GaN high electron mobility transistors has increased the importance of studying the thermal behavior and characteristics of devices, because the higher junction temperature caused by high power consumption will significantly affect the characteristics of GaN high electron mobility transistors during their operation.

[0040] Figure 3A schematic diagram showing the effect of ambient temperature on thermal resistance test results in a thermal resistance measurement method for a gallium nitride high electron mobility transistor provided by the prior art. Figure 4 A schematic diagram of the results of normalizing parameters under different time delay conditions in the thermal resistance measurement method of gallium nitride high electron mobility transistor provided by the prior art, Figure 5 Schematic diagram of error rate comparison under different delays in the prior art. Figure 3-Figure 5 As shown in the figure, STDM is the standard measurement method, and MM is an improvement on the STDM method. During the test of the transistor, when the power is high, the external environment temperature of the transistor cannot be stable, so the detection error of the thermal resistance is greatly affected. Figure 3 It can be seen that compared with the two thermal resistance detection methods of MM and STDM, the influence of ambient temperature fluctuation on the MM detection method is small, and continue to refer to Figure 4 and Figure 5 It can be seen that MM has a smaller error rate than STDM. However, in the thermal resistance detection process, the MM detection method needs to add additional measurement pulses to characterize the electrical parameters. However, this additional measurement pulse is not a pulse signal that makes the transistor device heat up. Therefore, the additional measurement pulse will have a delay, which will affect the detection accuracy of the thermal resistance.

[0041] Next, the technical solution of the embodiment of the present invention is described in detail.

[0042] Figure 6 The present invention provides a flow chart of the first method for testing the thermal resistance of a GaN high electron mobility transistor. This embodiment can be applied to the case of testing the thermal resistance of a transistor to improve the detection accuracy of the thermal resistance. The method can be performed by a thermal resistance testing device for a GaN high electron mobility transistor. The thermal resistance testing device for a GaN high electron mobility transistor can be implemented in the form of hardware and / or software. The thermal resistance testing device for a GaN high electron mobility transistor can be configured in an electronic device, for example, it can be installed on a desktop computer or a workbench. Figure 6 As shown, the method includes:

[0043] S101, obtaining an electrical parameter signal of a GaN high electron mobility transistor to be tested under a preset modulated pulse width pulse signal.

[0044] Specifically, the electrical parameter signal includes a voltage signal and a current signal. The preset modulated pulse width pulse signal can be understood as a pulse signal with a preset adjustable pulse width, and when the pulse signal is applied to the GaN high electron mobility transistor to be tested, the transistor will heat up and output a voltage signal and a current signal, so that subsequent analysis can be performed based on the obtained electrical signal.

[0045] S102: Determine an electrical parameter signal that meets a preset turn-off interval as target sample data.

[0046] Specifically, the obtained electrical parameter signal includes an electrical parameter signal when the transistor is in an on state and an electrical parameter signal when the transistor is in an off state. The preset off interval can be understood as the interval range when the transistor is in the off state in the obtained electrical parameter signal.

[0047] Specifically, since thermal resistance is a resistance that characterizes the heat transfer path, it is usually used to describe the thermal characteristics of transistors. In the off range, the transistor is not conductive, so the electrical parameter signal can be screened, the data of the transistor in the on state in the electrical parameter signal can be eliminated, the data of the transistor in the off state can be retained, and the data of the transistor in the off state can be determined as the target sample data, so as to analyze the thermal resistance of the transistor according to the target sample data.

[0048] S103 , obtaining a subthreshold swing of target sample data.

[0049] Specifically, the subthreshold swing is an important parameter to measure the performance of transistors in the subthreshold region. It describes the change in gate-source voltage when the source-drain current increases by one order of magnitude. Since the subthreshold swing is related to temperature, and the change in temperature is related to the thermal resistance of the transistor, obtaining the subthreshold swing of the target sample data is conducive to the subsequent determination of the thermal resistance of the transistor.

[0050] S104 , determining the thermal resistance of the GaN high electron mobility transistor to be tested according to the subthreshold swing of the target sample data.

[0051] Specifically, the thermal resistance of the GaN high electron mobility transistor to be measured is determined by the subthreshold swing of the target sample data, so there is no need to increase the measurement pulse, and thus there is no delay error caused by the additional measurement pulse, thereby improving the measurement accuracy of the transistor thermal resistance.

[0052] Figure 7 A schematic diagram of a thermal resistance curve of a gallium nitride high electron mobility transistor provided in an embodiment of the present invention, Figure 8 A schematic diagram of the impedance response of a gallium nitride high electron mobility transistor provided by an embodiment of the present invention, such as Figure 7 and Figure 8As shown, the blue solid line represents the technical solution provided by the embodiment of the present invention, namely the HPWS curve. The embodiment of the present invention is tested under the conditions of 1.8A maximum drain current and 200us pulse period. The black dotted line represents the technical solution in the prior art that requires additional measurement pulses, namely the MM curve. By comparing the two curves, it can be found that the impedance response curve obtained by the embodiment of the present invention is similar to the impedance response curve in the prior art, which shows that the embodiment of the present invention can measure the thermal resistance of the transistor without adding additional measurement pulses.

[0053] Fig. 9 A thermal resistance response characteristic curve of a gallium nitride high electron mobility transistor under different drain load current conditions provided by an embodiment of the present invention, Fig.10 for Fig. 9 The corresponding characterization results of the linear relationship between thermal resistance and drain load current are as follows: Fig. 9 and Fig.10 As shown, under different drain load currents, the thermal impedance of the transistor has a linear drift, but the thermal resistance is linearly related to the drain load current, which shows that the technical solution provided by the embodiment of the present invention is feasible. It should be noted that Fig. 9 The red square area inside is the interception of the peak area of ​​the thermal resistance response characteristic curve.

[0054] Fig.11 A schematic diagram of the structure of an electrical parameter signal acquisition module in a thermal resistance testing device for a gallium nitride high electron mobility transistor provided by an embodiment of the present invention, such as Fig.11 As shown, the controller can be a field programmable gate array (FPGA). FPGA is used as a control signal source for pulse drive, and is isolated between the optocoupler isolator (gate driver) and the drive circuit (voltage source and current source). The isolated signals are respectively input into the gate voltage and drain current drive circuits. In the existing test circuit and test method thereof, it is necessary to input a separate test signal pulse (such as a gate current pulse) to the transistor to be tested to characterize the thermosensitive electrical parameter signal. One of the significant defects of this type of topology is that the amplitude of its test pulse needs to adapt to the maximum carrying capacity of different devices. However, the maximum gate current of many insulated gate gallium nitride high electron mobility transistor devices is only 100uA or less. Therefore, when providing a pulse, the test circuit needs to divide or shunt the pulse amplitude in a large proportion, but this type of amplitude reduction means cannot reduce the voltage and current of the noise signal in the same proportion (parallel amplitude reduction cannot reduce voltage noise, and series amplitude reduction cannot reduce current noise), so its scope of use is limited. The topology proposed in the embodiment of the present invention does not need to input additional measurement pulses to the transistor to be tested during testing, so the above problems can be avoided.

[0055] Fig.12 for Fig.11 Schematic diagram of the error caused by the corresponding power source noise amplitude, Fig.13 for Fig.11 The corresponding error diagram caused by ambient temperature fluctuations is shown in Fig.12 and Fig.13 As shown, the black circle represents the technical solution of the embodiment of the present invention, that is, the HPWS curve, the red cross represents the MM test method in the prior art, and the blue box represents the STDM test method in the prior art. By comparing the three curves, it can be found that compared with the prior art, the electrical parameter signal acquisition module provided by the embodiment of the present invention is less susceptible to errors caused by ambient temperature fluctuations and power source noise amplitude.

[0056] The thermal resistance testing method of the GaN high electron mobility transistor provided by the embodiment of the present invention determines the electrical parameter signal that satisfies the preset turn-off interval as the target sample data, and the thermal resistance of the GaN high electron mobility transistor to be tested can be determined by obtaining the subthreshold swing of the target sample data. In this way, in the process of detecting the thermal resistance, there is no need to consider the fluctuation of the external environment temperature, and there is no need to add additional measurement pulses, and there is no measurement pulse delay error, thereby improving the detection accuracy of the thermal resistance.

[0057] Optional, Fig.14 A schematic flow chart of a second method for testing the thermal resistance of a gallium nitride high electron mobility transistor provided in an embodiment of the present invention. Fig.14 Based on the above embodiment, the operation of determining the thermal resistance of the GaN high electron mobility transistor to be tested according to the subthreshold swing of the target sample data is described in detail. Fig.14 As shown, the thermal resistance test method includes:

[0058] S201, obtaining an electrical parameter signal of a GaN high electron mobility transistor to be tested under a preset modulated pulse width pulse signal.

[0059] S202: Determine an electrical parameter signal that meets a preset turn-off interval as target sample data.

[0060] S203 , obtaining a subthreshold swing of target sample data.

[0061] S204 , determining a junction temperature parameter according to the subthreshold swing of the target sample data.

[0062] Specifically, since the subthreshold swing is related to temperature, the subthreshold swing of the target sample data is converted to temperature, thereby determining the junction temperature parameter of the transistor.

[0063] S205 , performing spectrum calculation on the junction temperature parameters to obtain a target spectrum.

[0064] Specifically, by performing spectrum calculation on the junction temperature parameters, the response capability of the transistor to signals of different frequencies at different temperatures can be obtained.

[0065] Specifically, the target spectrum includes data of a transistor heating frequency band and data of a modulation frequency band.

[0066] S206: Screen the target spectrum based on preset conditions to obtain data to be restored.

[0067] Specifically, the preset conditions can be understood as parameters such as a preset frequency range and bandwidth to screen the target spectrum.

[0068] Specifically, by performing frequency band screening on the data after the spectrum calculation, the data in the transistor heating frequency band is eliminated, and the data in the modulation frequency band is retained, and then the data in the modulation frequency band is determined as the data to be restored.

[0069] S207 , performing time domain recovery on the data to be recovered to obtain the thermal resistance of the GaN high electron mobility transistor to be tested.

[0070] Specifically, by performing time domain recovery on the data to be recovered, the thermal resistance of the transistor can be obtained.

[0071] In the thermal resistance test method of the GaN high electron mobility transistor provided by the embodiment of the present invention, since the subthreshold swing is related to temperature, the subthreshold swing of the target sample data is converted to temperature, and then the junction temperature parameters of the transistor can be determined. The spectrum calculation of the junction temperature parameters can obtain the response capability of the transistor to different frequency signals at different temperatures. In addition, the thermal resistance of the transistor can be obtained by screening the target spectrum and restoring the time domain, so the thermal resistance detection method of the transistor is simple and has high detection accuracy.

[0072] Optional, Fig.15 A schematic flow chart of a third method for testing the thermal resistance of a gallium nitride high electron mobility transistor provided in an embodiment of the present invention, Fig.15 Based on the above embodiments, the operation of determining the electrical parameter signal satisfying the preset off-interval as the target sample data and the operation of obtaining the subthreshold swing of the target sample data are described in detail. Fig.15 As shown, the thermal resistance test method includes:

[0073] S301, obtaining an electrical parameter signal of a GaN high electron mobility transistor to be tested under a preset modulated pulse width pulse signal.

[0074] Specifically, after the electrical parameter signal is acquired, the electrical parameter signal may be subjected to high-pass filtering, which is beneficial for subsequently improving the detection accuracy of the thermal resistance.

[0075] S302: Determine the transient state of the GaN high electron mobility transistor to be tested corresponding to the electrical parameter signal.

[0076] Specifically, the transient state can be understood as an on state or an off state of a transistor.

[0077] S303: Determine the electrical parameter signal of the GaN high electron mobility transistor to be tested that satisfies the preset turn-off interval as the target sample data.

[0078] Specifically, when the transistor is in the off interval, the transistor is not conductive, so the electrical parameter signal can be screened, the data of the transistor in the on state in the electrical parameter signal can be eliminated, the data of the transistor in the off state can be retained, and the data of the transistor in the off state can be determined as the target sample data, so as to analyze the thermal resistance of the transistor according to the target sample data.

[0079] S304: Filter the target sample data.

[0080] Specifically, bandpass filtering the target sample data is beneficial to obtaining the subthreshold swing amplitude at the modulation frequency on the one hand, and is beneficial to improving the detection accuracy on the other hand.

[0081] S305 : Determine the threshold voltage of the target sample data.

[0082] Specifically, the threshold voltage is the transition point of the transistor from the off state to the on state. Determining the threshold voltage is helpful to identify the working state of the transistor in the subthreshold region. The subthreshold region can be understood as a region where the gate voltage is lower than the threshold voltage.

[0083] S306 , determining the target sample data that meets the sub-threshold interval in the target sample data as the sample data to be tested according to the threshold voltage.

[0084] Specifically, by intercepting the target sample data, the target sample data that meets the subthreshold interval can be determined as the sample data to be tested. Since the leakage current of the transistor is usually small and the signal-to-noise ratio is high in the subthreshold interval, a more accurate subthreshold swing measurement result can be obtained. Outside the subthreshold region, other effects (such as channel length modulation effect, speed saturation effect, etc.) may affect the relationship between the leakage current and the gate voltage. By intercepting the subthreshold interval, the interference of these non-ideal effects can be eliminated, thereby reducing the measurement error.

[0085] S307 , obtaining the subthreshold swing of the sample data to be tested.

[0086] Specifically, obtaining the subthreshold swing of the sample data to be tested is helpful for subsequently improving the detection accuracy of the thermal resistance.

[0087] S308 , determining the thermal resistance of the GaN high electron mobility transistor to be tested according to the subthreshold swing of the target sample data.

[0088] The thermal resistance test method of the gallium nitride high electron mobility transistor provided by the embodiment of the present invention determines the transient state of the transistor and determines the data of the transistor in the off state as the target sample data, so as to analyze the thermal resistance of the transistor according to the target sample data. By intercepting the target sample data, the target sample data that meets the subthreshold interval can be determined as the sample data to be tested, thereby obtaining a more accurate subthreshold swing measurement result, and further improving the detection accuracy of the thermal resistance.

[0089] Fig.16 A schematic diagram of a thermal resistance test device for a gallium nitride high electron mobility transistor provided by an embodiment of the present invention is shown in FIG. Fig.16 As shown, the thermal resistance test device includes:

[0090] The electrical parameter signal acquisition module 10 is used to obtain the electrical parameter signal of the GaN high electron mobility transistor to be tested under a preset modulated pulse width pulse signal; the electrical parameter signal includes a voltage signal and a current signal.

[0091] The target sample data determination module 20 is used to determine the electrical parameter signal that meets the preset shutdown interval as the target sample data.

[0092] The subthreshold swing acquisition module 30 is used to acquire the subthreshold swing of target sample data.

[0093] The thermal resistance determination module 40 is used to determine the thermal resistance of the GaN high electron mobility transistor to be tested according to the subthreshold swing of the target sample data.

[0094] Optionally, the thermal resistance determination module includes a junction temperature parameter determination unit and a thermal resistance determination unit.

[0095] The temperature parameter determination unit is used to determine the junction temperature parameter according to the subthreshold swing of the target sample data.

[0096] The thermal resistance determination unit is used to determine the thermal resistance of the GaN high electron mobility transistor to be tested according to the junction temperature parameter.

[0097] Optionally, the thermal resistance determination unit includes a target spectrum acquisition subunit, a to-be-restored data acquisition subunit and a time domain restoration subunit.

[0098] The target spectrum obtaining subunit is used to perform spectrum calculation on the junction temperature parameter to obtain the target spectrum.

[0099] The data to be restored obtaining subunit is used to screen the target spectrum based on preset conditions to obtain the data to be restored.

[0100] The time domain recovery subunit is used to perform time domain recovery on the data to be recovered to obtain the thermal resistance of the GaN high electron mobility transistor to be tested.

[0101] Optionally, the target sample data determination module includes a transient judgment unit and a target sample data determination unit.

[0102] The transient state judgment unit is used to judge the transient state of the GaN high electron mobility transistor to be tested corresponding to the electrical parameter signal.

[0103] The target sample data determination unit is used to determine the electrical parameter signal of the GaN high electron mobility transistor to be tested that satisfies the preset turn-off interval as the target sample data.

[0104] Optionally, the target sample data determination module also includes a filtering unit.

[0105] Specifically, the filtering unit is used to filter the target sample data.

[0106] Optionally, the subthreshold swing amplitude acquisition module includes a threshold voltage determination unit, a to-be-tested sample data determination unit and a subthreshold swing amplitude acquisition unit.

[0107] The threshold voltage determination unit is used to determine the threshold voltage of the target sample data.

[0108] The to-be-tested sample data determining unit is used to determine the target sample data satisfying the sub-threshold interval in the target sample data as the to-be-tested sample data according to the threshold voltage.

[0109] The subthreshold swing acquisition unit is used to acquire the subthreshold swing of the sample data to be tested.

[0110] Optionally, the thermal resistance testing device also includes a filtering module.

[0111] Specifically, the filtering module is used to filter the electrical parameter signal.

[0112] The thermal resistance testing device of the GaN high electron mobility transistor provided by the embodiment of the present invention obtains the electrical parameter signal of the GaN high electron mobility transistor to be tested under a preset modulated pulse width pulse signal through an electrical parameter signal acquisition module; determines the electrical parameter signal that satisfies the preset turn-off interval as the target sample data through a target sample data determination module; obtains the subthreshold swing of the target sample data through a subthreshold swing acquisition module; and determines the thermal resistance of the GaN high electron mobility transistor to be tested according to the subthreshold swing of the target sample data through a thermal resistance determination module. In this way, in the process of detecting the thermal resistance, there is no need to consider the fluctuation of the external environment temperature, and there is no need to add additional measurement pulses and there is no measurement pulse delay error, so the detection accuracy of the thermal resistance is high.

[0113] Fig.17 A schematic diagram of the structure of an electronic device provided for an embodiment of the present invention. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0114] like Fig.17 As shown, the electronic device 50 includes at least one processor 51, and a memory connected to the at least one processor 51 in communication, such as a read-only memory (ROM) 52, a random access memory (RAM) 53, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 51 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 52 or the computer program loaded from the storage unit 58 to the random access memory (RAM) 53. In the RAM 53, various programs and data required for the operation of the electronic device 50 can also be stored. The processor 51, the ROM 52, and the RAM 53 are connected to each other via a bus 54. An input / output (I / O) interface 55 is also connected to the bus 54.

[0115] A number of components in the electronic device 50 are connected to the I / O interface 55, including: an input unit 56, such as a keyboard, a mouse, etc.; an output unit 57, such as various types of displays, speakers, etc.; a storage unit 58, such as a disk, an optical disk, etc.; and a communication unit 59, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 59 allows the electronic device 50 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0116] The processor 51 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the processor 51 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 51 executes the various methods and processes described above, such as a thermal resistance test method for a gallium nitride high electron mobility transistor.

[0117] In some embodiments, a thermal resistance test method applied to a gallium nitride high electron mobility transistor may be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 58. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 50 via the ROM 52 and / or the communication unit 59. When the computer program is loaded into the RAM 53 and executed by the processor 51, one or more steps of the thermal resistance test method applied to a gallium nitride high electron mobility transistor described above may be performed. Alternatively, in other embodiments, the processor 51 may be configured to execute a thermal resistance test method applied to a gallium nitride high electron mobility transistor in any other appropriate manner (e.g., by means of firmware).

[0118] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0119] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0120] In the context of an embodiment of the present invention, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, device, or equipment. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices, or equipment, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0121] To provide interaction with a user, the systems and techniques described herein may be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or trackball) through which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0122] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0123] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0124] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, combinations and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for testing the thermal resistance of a gallium nitride high electron mobility transistor, characterized in that: include: Acquiring an electrical parameter signal of a GaN high electron mobility transistor to be tested under a preset modulated pulse width pulse signal; The electrical parameter signal includes a voltage signal and a current signal; Determining the electrical parameter signal that meets the preset shut-off interval as the target sample data; Acquire a subthreshold swing of the target sample data; The thermal resistance of the GaN high electron mobility transistor to be tested is determined according to the subthreshold swing of the target sample data.

2. The thermal resistance testing method according to claim 1, characterized in that: Determining the thermal resistance of the GaN high electron mobility transistor to be tested according to the subthreshold swing of the target sample data includes: determining a junction temperature parameter according to a subthreshold swing of the target sample data; The thermal resistance of the GaN high electron mobility transistor to be tested is determined according to the junction temperature parameter.

3. The thermal resistance testing method according to claim 2, characterized in that: Determining the thermal resistance of the GaN high electron mobility transistor to be tested according to the junction temperature parameter includes: Performing spectrum calculation on the junction temperature parameter to obtain a target spectrum; Screening the target spectrum based on preset conditions to obtain data to be recovered; Perform time domain recovery on the data to be recovered to obtain the thermal resistance of the GaN high electron mobility transistor to be tested.

4. The thermal resistance testing method according to claim 1, characterized in that: The electrical parameter signal that meets the preset off-interval is determined as the target sample data, including: Determining the transient state of the GaN high electron mobility transistor to be tested corresponding to the electrical parameter signal; The electrical parameter signal of the GaN high electron mobility transistor to be tested that satisfies a preset turn-off interval in a transient state is determined as target sample data.

5. The thermal resistance testing method according to claim 4, characterized in that: After determining the electrical parameter signal of the GaN high electron mobility transistor to be tested that satisfies the preset turn-off interval as the target sample data, the method further includes: The target sample data is filtered.

6. The thermal resistance testing method according to claim 1, characterized in that: Acquiring a subthreshold swing of the target sample data includes: Determining a threshold voltage of the target sample data; Determining, according to the threshold voltage, target sample data that satisfies a sub-threshold interval among the target sample data as sample data to be tested; Obtaining the subthreshold swing of the sample data to be tested.

7. The thermal resistance testing method according to claim 1, characterized in that: After obtaining the electrical parameter signal of the GaN high electron mobility transistor to be tested under a preset pulse, the method further includes: The electrical parameter signal is filtered.

8. A thermal resistance test device for a gallium nitride high electron mobility transistor, characterized in that: include: An electrical parameter signal acquisition module is used to acquire an electrical parameter signal of a GaN high electron mobility transistor to be tested under a preset modulated pulse width pulse signal; The electrical parameter signal includes a voltage signal and a current signal; A target sample data determination module, used to determine an electrical parameter signal that meets a preset shut-off interval as target sample data; A subthreshold swing acquisition module, used to acquire the subthreshold swing of the target sample data; The thermal resistance determination module is used to determine the thermal resistance of the GaN high electron mobility transistor to be tested according to the subthreshold swing of the target sample data.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the program, the method according to any one of claims 1 to 7 is implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the method according to any one of claims 1 to 7 is implemented.

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