Bonding device and bonding method

Abstract

The embodiment of the invention provides a bonding device and a bonding method, the bonding device comprises a bonding assembly, and the bonding assembly comprises a control part and a deformation part; the control part surrounds the deformation part, and the control part is used for applying voltage to the deformation part to enable the deformation part to deform and drive the first bonding structure to deform.

Description

Technical Field

[0001] The present disclosure relates to the technical field of chip bonding, and in particular to a bonding device and a bonding method. Background Art

[0002] In the semiconductor manufacturing process, the bonding between chip and wafer is particularly important. However, in the existing chip bonding process, most of the chips and wafers are bonded together using a planar bonding method, which results in more bubbles between the bonding surfaces of the chip and the wafer, resulting in poor bonding quality and bonding strength.

[0003] Therefore, how to reduce the generation of bubbles during the bonding process between chips and wafers and improve the bonding quality and bonding strength is a technical problem that needs to be solved urgently. Summary of the invention

[0004] In view of this, embodiments of the present disclosure provide a bonding device and a bonding method.

[0005] To achieve the above objectives, the technical solution of the present disclosure is implemented as follows:

[0006] In a first aspect, an embodiment of the present disclosure provides a bonding device, including a bonding assembly, wherein the bonding assembly includes a control part and a deformation part; the control part surrounds the deformation part, and the control part is used to apply a voltage to the deformation part to cause the deformation part to deform and drive the first bonding structure to deform.

[0007] In some embodiments, the deformation portion includes a plurality of sub-deformation portions, and the control portion surrounds each of the sub-deformation portions.

[0008] In some embodiments, the deformation portion includes at least one deformation layer, and the deformation layer includes a rigid piezoelectric material.

[0009] In some embodiments, the control portion is used to apply a voltage to the deformable portion to cause the deformable portion to deform in a direction away from the control portion.

[0010] In some embodiments, the control unit is used to apply a first voltage to two opposite sides of the deformation unit along a first direction so that the deformation unit has a first deformation amount in the first direction; the control unit is also used to apply a second voltage to two opposite sides of the deformation unit along a second direction so that the deformation unit has a second deformation amount in the second direction; the first direction and the second direction intersect, and the first direction and the second direction are perpendicular to the thickness direction of the deformation unit.

[0011] In some embodiments, the bonding assembly further includes a protection portion; the protection portion at least covers a side of the deformation portion away from the control portion, and the protection portion includes a flexible material layer.

[0012] In some embodiments, a vacuum device and a plurality of through holes penetrating the bonding component are further included; the vacuum device is connected to the bonding component and is used to adsorb the first bonding structure onto the bonding component through the plurality of through holes.

[0013] In some embodiments, a scanning device is further included; the scanning device is used to obtain the deformation parameters of the first bonding structure; and the voltage applied by the control unit to the deformation unit is determined according to the deformation parameters, so that the deformation unit undergoes corresponding deformation.

[0014] In a second aspect, an embodiment of the present disclosure provides a bonding method, which uses a bonding device such as any of the above embodiments for bonding, and the method includes: obtaining the first bonding structure; applying a voltage to the deformation part through the control part to cause the deformation part to deform; the deformation part drives the first bonding structure to deform; and bonding the first bonding structure to the second bonding structure.

[0015] In some embodiments, the method further includes: acquiring deformation parameters of the first bonding structure, and determining a voltage applied by the control unit to the deformation unit according to the deformation parameters, so that the deformation unit undergoes corresponding deformation.

[0016] The disclosed embodiment provides a bonding device and a bonding method, wherein the bonding device includes a bonding component, wherein the bonding component includes a control portion and a deformation portion; the control portion surrounds the deformation portion, and the control portion is used to apply a voltage to the deformation portion to deform the deformation portion and drive the first bonding structure to deform. The disclosed embodiment uses the control portion to apply a voltage to the deformation portion to deform the deformation portion and drive the first bonding structure to deform, so that the bonding surface of the first bonding structure is in a shape that is conducive to the bonding process, which is conducive to improving the bonding quality and bonding strength. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1a A cross-sectional schematic diagram 1 of a bonding device provided in an embodiment of the present disclosure;

[0018] Figure 1b A second cross-sectional schematic diagram of a bonding device provided in an embodiment of the present disclosure;

[0019] Figure 2a Schematic diagram 1 of the bonding process provided in the embodiment of the present disclosure;

[0020] Figure 2b Schematic diagram 2 of the bonding process provided for the embodiment of the present disclosure;

[0021] Figure 3 A cross-sectional view of a bonding device provided in an embodiment of the present disclosure Figure 3 ;

[0022] Figure 4 The embodiments of the present disclosure provide Figure 3 A schematic cross-sectional view of the bonding device along line AA';

[0023] Figure 5a to Figure 5b A potential diagram of a deformation portion provided by an embodiment of the present disclosure;

[0024] Figure 6 A schematic diagram of the steps of a bonding method provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0025] The following will be combined with the embodiments of the present disclosure and the accompanying drawings to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0026] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0027] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0028] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present disclosure necessarily has the first element, component, region, layer or part.

[0029] Spatially relative terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0030] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0031] In order to thoroughly understand the present disclosure, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present disclosure. The preferred embodiments of the present disclosure are described in detail below, but in addition to these detailed descriptions, the present disclosure may also have other implementations.

[0032] It should be noted that, for the convenience of description, various directions that may be used in the following description are first defined. The thickness direction of the deformation portion is defined as the vertical direction (i.e., the Z direction in the figure). In a plane perpendicular to the Z direction, intersecting X and Y directions are defined, and the X, Y, and Z directions may be perpendicular to each other.

[0033] In the related art, the manufacturing process of the bare chip needs to go through the steps of cutting, breaking glue, coating and separation. When performing the above steps, it is very easy to cause the surface of the bare chip to warp. Therefore, the surface of the bare chip used for bonding has an uneven problem. When the uneven bare chip is directly bonded to the wafer, the bare chip and the wafer are in line contact or surface contact due to the uneven surface of the bare chip. Therefore, there is a gap in the contact surface between the bare chip and the wafer. The gas in the gap is difficult to discharge. These gases will be enclosed in the bonding surface of the bare chip and the wafer during the bonding process to form enclosed bubbles, which in turn affects the bonding quality and bonding strength between the bare chip and the wafer.

[0034] In addition, during the wafer manufacturing process, the material density or thickness in different areas of the wafer is different, which may cause warping of the wafer surface. There is a problem of uneven stress distribution during the wafer grinding, thinning or film forming process, which may also cause warping of the wafer surface. Due to the uneven surface of the wafer, the wafers are in line contact or surface contact, so there is a gap between the contact surfaces of the two wafers. The gas in the gap is difficult to discharge. These gases will be enclosed inside the bonding surfaces of the two wafers during the bonding process, forming enclosed bubbles, which in turn affects the bonding quality and bonding strength between the wafers.

[0035] In view of this, Figure 1a A cross-sectional schematic diagram of a bonding device provided in an embodiment of the present disclosure is shown in FIG. Figure 1a As shown, the bonding device includes a bonding assembly, and the bonding assembly includes a control part 110 and a deformation part 120 protection part; the control part 110 surrounds the deformation part 120, and the control part 110 is used to apply voltage to the deformation part 120 to deform the deformation part 120 and drive the first bonding structure to deform.

[0036] See also Figure 1a The control portion 110 includes a first region 112 and a second region 114, and the second region 114 surrounds the first region 112. The first region 112 covers the upper surface of the deformation portion 120, and the second region 114 covers the side wall of the deformation portion 120.

[0037] It should be noted that in the plane perpendicular to the Z direction, the shape of the control unit projection can be any shape, such as a triangle, rectangle or circle, etc., and the present disclosure does not impose any restrictions on this. The first bonding structure can be a bare chip or a wafer, or other semiconductor structures that need to be bonded.

[0038] The disclosed embodiment can utilize the control unit 110 to apply a voltage to the deformation unit 120, so that the deformation unit 120 is deformed and drives the first bonding structure to be deformed, so that the bonding surface of the first bonding structure is in a shape that is conducive to the bonding process, which is beneficial to improving the bonding quality and bonding strength. Specifically, the control unit 110 can be utilized to apply a voltage to the deformation unit 120, so that the deformation unit 120 is deformed and drives the first bonding structure to be deformed, for example, when the first bonding structure is bonded to other bonding structures, the bonding surface of the first bonding structure is to diffuse from the middle contact point to the surroundings to achieve bonding, so that the gas between the first bonding structure and the other bonding structures can be discharged, and the generation of enclosed bubbles in the bonding surface can be avoided, so that the bonding quality and bonding strength can be improved.

[0039] In some embodiments, when the lower surface of the bonding component is in a planar state, the bonding device obtains the first bonding structure to fix the first bonding structure on the lower surface of the deformation part. The bonding device applies a voltage to the deformation part through the control part to deform the deformation part and drive the first bonding structure to deform, so that the bonding surface of the first bonding structure is in single-point contact with other bonding structures when bonding. Specifically, the deformation part deforms in a direction away from the control part, driving the first bonding structure to deform in a direction away from the control part, so that the first bonding structure is in single-point contact with other bonding structures when bonding. The bonding device transfers the deformed first bonding structure to the bonding surface of other bonding structures for bonding. During the bonding process, the control part can gradually release the voltage applied to the deformation part, so that the deformation amount of the deformation part gradually decreases, that is, the lower surface of the bonding component gradually returns to a planar state to achieve bonding between the first bonding structure and other bonding structures. It should be noted that obtaining the first bonding structure refers to bringing the bonding component into contact with the first bonding structure, or the bonding component picking up the first bonding structure.

[0040] In some embodiments, the bonding assembly further includes a protection portion; the protection portion at least covers a side of the deformation portion away from the control portion, and the protection portion includes a flexible material layer.

[0041] Figure 1b The second cross-sectional schematic diagram of the bonding device provided by the embodiment of the present disclosure. Figure 1b, the bonding assembly further includes a protection portion 130; the protection portion 130 at least covers the side of the deformation portion 120 away from the control portion 110, that is, the protection portion 130 covers the lower surface of the deformation portion 120, and the second region 114 can also cover the side wall of the protection portion 130, so that the protection portion 130 can be fixed in the control portion 110 by embedding, and there is no need to fix the protection portion 130 by pasting. The lower surface of the protection portion 130 (the surface away from the deformation portion 120) is in contact with the first bonding structure and the protection portion 130 includes a flexible material layer, so that the deformation portion 120 can drive the protection portion 130 to deform, and then drive the first bonding structure to deform without causing damage to the first bonding structure.

[0042] In some embodiments, the control portion 110 is used to apply a voltage to the deformation portion 120 to cause the deformation portion 120 to deform in a direction away from the control portion 110 .

[0043] Figure 2a Schematic diagram 1 of the bonding process provided in the embodiment of the present disclosure, Figure 2b Schematic diagram 2 of the bonding process provided in the embodiment of the present disclosure, Figure 2a to Figure 2b Take the bonding component including the protection part as an example for explanation. Figure 2a As shown, when the first bonding structure is removed from the temporarily bonded carrier, the edge of the first bonding structure is easily warped. Specifically, the back side of the first bonding structure 140 is detachably connected to the bonding component (protective portion 130), the bonding surface (front side) of the first bonding structure 140 is used for bonding with the second bonding structure 150, and the edge of the first bonding structure 140 is tilted in the direction away from the protective portion, that is, the distance between the edge of the bonding surface of the first bonding structure 140 and the bonding component is larger than the distance between the center of the bonding surface and the bonding component. If the first bonding structure 140 and the second bonding structure 150 are directly bonded, since the first bonding structure 140 and the second bonding structure 150 are in line contact or surface contact, the first bonding structure 140 and the second bonding structure 150 are bonded from the edge of the bonding surface to the center, so that closed bubbles are generated in the bonding area between the first bonding structure 140 and the second bonding structure 150, thereby affecting the bonding quality and bonding strength between the first bonding structure 140 and the second bonding structure 150. Figure 2bAs shown, a voltage is applied to the deformable portion 120 through the control portion 110 to cause the deformable portion 120 to deform in a direction away from the control portion 110, that is, the deformable portion 120 bulges in a direction away from the control portion and drives the protective portion 130 and the first bonding structure 140 to deform, so that the first bonding structure 140 and the second bonding structure 150 are in single-point contact, so that the first bonding structure 140 and the second bonding structure 150 are bonded by diffusing from the center of the bonding surface to the surrounding areas, so that the gas between the first bonding structure 140 and the second bonding structure 150 can be discharged, avoiding the existence of enclosed bubbles between the bonding surfaces between the first bonding structure 140 and the second bonding structure 150, thereby improving the bonding quality and bonding strength between the first bonding structure 140 and the second bonding structure 150. It should be noted that the bonding device can transfer the deformed first bonding structure 140 to the bonding surface of the second bonding structure 150 for bonding, or the bonding device can transfer the first bonding structure 140 to the bonding surface of the second bonding structure 150 and then deform the first bonding structure 140, and then bond the first bonding structure 140 and the second bonding structure 150.

[0044] In some embodiments, a wire is disposed in the control part 110 and an electrode is disposed at the position where the control part 110 contacts the deformation part 120 , so that the control part 110 can apply a voltage to the deformation part 120 through the electrode to cause the deformation part 120 to deform.

[0045] In some embodiments, the bonding device further includes a vacuum device and a plurality of through holes penetrating the bonding component; the vacuum device is connected to the bonding component and is used to adsorb the first bonding structure onto the bonding component through the plurality of through holes.

[0046] Figure 3 A cross-sectional view of a bonding device provided in an embodiment of the present disclosure Figure 3 , Figure 4 The embodiments of the present disclosure provide Figure 3 Schematic diagram of the cross section of the bonding device along line AA'. Figure 3 and Figure 4 As shown, the bonding device also includes a vacuum device and a plurality of through holes 160 penetrating the bonding component. The vacuum device is connected to the surface of the control part 110 away from the deformation part 120. The vacuum device evacuates air through the through holes 160, thereby reducing the pressure on the surface of the bonding component, and forming a vacuum area between the protection part 130 (or the deformation part 120) and the first bonding structure. The vacuum area will generate sufficient suction force to stably adsorb the first bonding structure on the bonding component.

[0047] It should be noted that the through hole 160 at least penetrates the position where the deformation portion of the bonding component is provided.

[0048] In some embodiments, the deformation portion includes a plurality of sub-deformation portions, and the control portion surrounds each sub-deformation portion.

[0049] like Figure 3 and Figure 4 As shown, the deformation portion 120 includes a plurality of sub-deformation portions 122, and the second region 114 of the control portion 110 surrounds each sub-deformation portion 122. The control portion 110 can apply a voltage to any one or more sub-deformation portions 122 to deform the corresponding sub-deformation portion 122 and drive the protection portion 130 and the first bonding structure to deform, so that the deformation position and deformation amount of the deformation portion 120 can be accurately controlled, thereby accurately changing the shape of the first bonding structure.

[0050] In some embodiments, the bonding surface of the first bonding structure may have multiple uneven locations (for example, the bonding surface of the first bonding structure has different degrees of warping and uneven position distribution). The control unit can control the deformation amounts of multiple sub-deformation units respectively, and can adjust multiple uneven locations on the bonding surface of the first bonding structure at the same time. This can improve the efficiency and accuracy of the bonding device in adjusting the shape of the first bonding structure, and further improve the bonding quality and bonding strength between the first bonding structure and the second bonding structure.

[0051] Continue to refer Figure 3 The thickness of the second region 114a located at the edge of the control portion is the sum of the thicknesses of the deformation portion 120 and the protection portion 130, and the thickness of the second region 114b located in the middle of the control portion is the same as the thickness of the deformation portion, so that the protection portion 130 covers the sub-deformation portion 122 and the second region 114b located in the middle of the control portion, thereby preventing the second region 114b located in the middle of the control portion from being covered by the protection portion 130 and causing damage to the first bonding structure when the shape of the first bonding structure is changed.

[0052] In some embodiments, when the bonding assembly does not include a protective portion, the thickness of the second region located at the edge of the control portion is the same as the thickness of the deformation portion, and the thickness of the second region located in the middle of the control portion is also the same as the thickness of the deformation portion.

[0053] It should be noted that Figure 4 The number of neutron deformation parts is only an exemplary description, and the embodiments of the present disclosure do not impose any limitation on the number of sub-deformation parts.

[0054] In some embodiments, the deformation portion includes at least one deformation layer, and the deformation layer includes a rigid piezoelectric material.

[0055] In some embodiments, the deformation layer includes a rigid piezoelectric material, and the control unit 110 applies a voltage to the deformation layer so that the deformation layer generates a reverse piezoelectric effect, thereby causing the deformation layer to deform.

[0056] In some embodiments, on the XOY plane, the deformation portion 120 is displaced according to the inverse piezoelectric effect. Since the control portion 110 limits the displacement of the deformation portion 120 in the XOY plane and in the direction close to the control portion 110, the deformation portion 120 is deformed in a direction away from the control portion 110.

[0057] It should be noted that the deformation layer or the deformation part may include piezoelectric ceramic material or piezoelectric crystal material, and the control part is a rigid material.

[0058] In some embodiments, the control unit 110 is used to apply a first voltage to two opposite sides of the deformation unit 120 along a first direction so that the deformation unit has a first deformation amount in the first direction; the control unit 110 is also used to apply a second voltage to two opposite sides of the deformation unit 120 along a second direction so that the deformation unit has a second deformation amount in the second direction; the first direction and the second direction intersect, and the first direction and the second direction are perpendicular to the thickness direction of the deformation unit.

[0059] Figure 5a to Figure 5b A potential diagram of a deformation portion provided in an embodiment of the present disclosure.

[0060] like Figure 5a As shown, the shape of the deformation portion may include a rectangle. The control portion may apply a first voltage to the electrodes 116a and 116b opposite to each other in the X direction, so that the deformation portion has a first deformation amount in the X direction; the control portion may also apply a second voltage to the electrodes 116c and 116d opposite to each other in the Y direction, so that the deformation portion has a second deformation amount in the Y direction, thereby controlling the deformation position and deformation amount of the deformation portion 120. The control portion may also apply the same or different voltages to multiple pairs of electrodes in the X direction, and apply the same or different voltages to multiple pairs of electrodes in the Y direction, thereby controlling the deformation position and deformation amount of the deformation portion 120. In this way, the deformation position and deformation amount of the deformation portion 120 can be accurately controlled, thereby accurately changing the shape of the first bonding structure.

[0061] like Figure 5b As shown, the shape of the deformable portion may include a circle. The control portion may apply voltages to the electrodes 118a and 118b that are opposite to each other in any direction passing through the center of the deformable portion, or apply the same or different voltages to the electrodes that are opposite to each other in multiple arbitrary directions passing through the center of the deformable portion 120, thereby controlling the deformation position and deformation amount of the deformable portion 120. In this way, the deformation position and deformation amount of the deformable portion 120 can be precisely controlled, thereby accurately changing the shape of the first bonding structure.

[0062] In some embodiments, the shape of the deformation portion may include a circle. The control portion may apply a first voltage to two electrodes opposite to each other in a first direction so that the deformation portion has a first deformation amount in the first direction, and apply a second voltage to two electrodes opposite to each other in a second direction so that the deformation portion has a second deformation amount in the second direction, thereby controlling the deformation position and deformation amount of the deformation portion. In this way, the deformation position and deformation amount of the deformation portion can be accurately controlled, thereby accurately changing the shape of the first bonding structure.

[0063] In some embodiments, the shape of the deformation portion can be adapted to the shape of the first bonding structure. For example, if the bonding surface of the first bonding structure is circular, the bonding surface of the deformation portion is also circular; if the bonding surface of the first bonding structure is rectangular, the bonding surface of the deformation portion is also rectangular.

[0064] In some embodiments, the control unit may apply different or the same voltages to any one or more pairs of electrodes. Specifically, the control unit may determine through which electrodes the control unit applies voltage to the deformation unit according to the shape of the bonding surface of the first bonding structure.

[0065] It should be noted that Figure 5a and Figure 5b The connection lines between each pair of electrodes and other pairs of electrodes that appear to intersect each other in the example may be embedded in the first region of the control unit and be electrically isolated from each other.

[0066] It should be noted that the shape of the deformation portion or the sub-deformation portion can be any shape, and the present disclosure does not impose any limitation on this.

[0067] In some embodiments, the bonding device further includes a scanning device; the scanning device is used to obtain deformation parameters of the first bonding structure; and the voltage applied by the control unit to the deformation unit is determined according to the deformation parameters, so that the deformation unit undergoes corresponding deformation.

[0068] In some embodiments, the bonding device further includes a scanning device, which is used to scan the bonding surface of the first bonding structure to obtain the deformation parameters of the first bonding structure, and the deformation parameters of the first bonding structure include the position of each depression or protrusion in the bonding surface of the first bonding structure and the depth or height of the depression or protrusion. If the scanning device recognizes that there are multiple uneven places on the bonding surface of the first bonding structure, the voltage applied by the control part to the deformation part can be determined for each depression or protrusion on the bonding surface of the first bonding structure, so that the deformation part deforms for each depression or protrusion on the bonding surface of the first bonding structure. In this way, each depression or protrusion in the bonding surface of the first bonding structure can be deformed, so that the bonding surface of the first bonding structure is an arc surface, that is, the first bonding structure and the other bonding structures are in single-point contact, so that the bonding surface is diffused from the middle contact point to the surroundings to achieve bonding, so that the gas between the first bonding structure and the other bonding structures can be discharged, and the generation of closed bubbles in the bonding surface can be avoided, so that the bonding quality and bonding strength can be improved.

[0069] The embodiments of the present disclosure also provide a bonding method, which uses a bonding device such as any of the above embodiments for bonding, and the bonding method includes: obtaining a first bonding structure; applying a voltage to a deformation part through a control part to deform the deformation part; the deformation part drives the first bonding structure to deform; and bonding the first bonding structure to the second bonding structure.

[0070] Figure 6 A schematic diagram of a bonding method provided in an embodiment of the present disclosure. Figure 6 As shown, the bonding method comprises the following steps:

[0071] Step 610: Obtain a first bonding structure.

[0072] Step 620: Applying a voltage to the deformable portion through the control portion to cause the deformable portion to deform.

[0073] Step 630: The deformation portion drives the first bonding structure to deform.

[0074] Step 640: Bond the first bonding structure to the second bonding structure.

[0075] In some embodiments, when the lower surface of the bonding component is in a planar state, the bonding device obtains the first bonding structure to fix the first bonding structure on the lower surface of the deformation part, and the bonding device applies a voltage to the deformation part through the control part to deform the deformation part; when the deformation part is deformed, the first bonding structure is also deformed, so that the bonding surface of the first bonding structure is in a shape that is conducive to the bonding process, which is beneficial to improving the bonding quality and bonding strength. Specifically, the control part can be used to apply a voltage to the deformation part to deform the deformation part, and when the deformation part is deformed, the first bonding structure is also deformed, for example, when the first bonding structure is bonded to other bonding structures, the bonding surface of the first bonding structure is diffused from the middle contact point to the surroundings to achieve bonding, so that the gas between the first bonding structure and other bonding structures can be discharged to avoid the generation of enclosed bubbles in the bonding surface, so that the bonding quality and bonding strength can be improved.

[0076] In some embodiments, the bonding device can transfer the deformed first bonding structure to the bonding surface of other bonding structures for bonding, or the bonding device can transfer the first bonding structure to the bonding surface of other bonding structures and then deform the first bonding structure, and then bond the first bonding structure to the other bonding structures. During the bonding process, the control unit can gradually release the voltage applied to the deformation unit, so that the deformation amount of the deformation unit gradually decreases, that is, the lower surface of the bonding component gradually returns to a planar state, so as to achieve bonding between the first bonding structure and the other bonding structure.

[0077] In some embodiments, the bonding method further includes: acquiring deformation parameters of the first bonding structure, and determining a voltage applied by the control unit to the deformation unit according to the deformation parameters, so that the deformation unit undergoes corresponding deformation.

[0078] In some embodiments, the bonding device further includes a scanning device, which is used to scan the bonding surface of the first bonding structure to obtain the deformation parameters of the first bonding structure, and the deformation parameters of the first bonding structure include the position of each depression or protrusion in the bonding surface of the first bonding structure and the depth or height of the depression or protrusion. If the scanning device recognizes that there are multiple uneven places on the bonding surface of the first bonding structure, the voltage applied by the control part to the deformation part can be determined for each depression or protrusion on the bonding surface of the first bonding structure, so that the deformation part deforms for each depression or protrusion on the bonding surface of the first bonding structure. In this way, each depression or protrusion in the bonding surface of the first bonding structure can be deformed, so that the bonding surface of the first bonding structure is an arc surface, that is, the first bonding structure and the other bonding structures are in single-point contact, so that the bonding surface is diffused from the middle contact point to the surroundings to achieve bonding, so that the gas between the first bonding structure and the other bonding structures can be discharged, and the generation of closed bubbles in the bonding surface can be avoided, so that the bonding quality and bonding strength can be improved.

[0079] In some embodiments, the bonding assembly further includes a protective portion, the protective portion at least covers a side of the deformation portion away from the control portion, and the protective portion includes a flexible material layer, and the lower surface of the protective portion away from the deformation portion is in contact with the first bonding structure. Step 630 may specifically include: the deformation portion drives the protective portion to deform, thereby driving the first bonding structure to deform. Since the protective portion includes a flexible material layer, the protective portion can protect the first bonding structure without damaging the first bonding structure when the deformation portion drives the first bonding structure to deform.

[0080] In some embodiments, the bonding method further includes: using the control part to apply a voltage to the deformation part so that the deformation part is deformed in a direction away from the control part.

[0081] In some embodiments, a control unit is used to apply a voltage to the deformation unit to cause the deformation unit to deform in a direction away from the control unit, that is, the deformation unit bulges in a direction away from the control unit and drives the protective unit and the first bonding structure to deform, so that the first bonding structure and the other bonding structures are in single-point contact, so that the first bonding structure and the other bonding structures are bonded by diffusion from the center of the bonding surface to the surrounding areas. In this way, the gas between the first bonding structure and the other bonding structures can be discharged, avoiding the existence of enclosed bubbles between the bonding surfaces between the first bonding structure and the other bonding structures, thereby improving the bonding quality and bonding strength between the first bonding structure and the other bonding structures.

[0082] In some embodiments, the bonding device further includes a vacuum device and a plurality of through holes penetrating the bonding component; the vacuum device is connected to the bonding component; the bonding method further includes: using the vacuum device to adsorb the first bonding structure onto the bonding component through the plurality of through holes.

[0083] In some embodiments, a vacuum device is used to evacuate the through hole to reduce the pressure on the surface of the bonding component, forming a vacuum area between the protective portion (or deformation portion) and the first bonding structure. The vacuum area will generate sufficient suction force to stably adsorb the first bonding structure on the bonding component.

[0084] In some embodiments, the deformation portion includes multiple sub-deformation portions, and the control portion surrounds each sub-deformation portion; the bonding method also includes: using the control portion to apply voltage to any one or more sub-deformation portions to cause the corresponding sub-deformation portions to deform and drive the first bonding structure to deform, so that the deformation position and deformation amount of the deformation portion can be accurately controlled, thereby accurately changing the shape of the first bonding structure.

[0085] In some embodiments, the bonding surface of the first bonding structure may have multiple uneven locations (for example, the bonding surface of the first bonding structure has different degrees of warping and uneven position distribution). The control unit can control the deformation amounts of multiple sub-deformation units respectively, and can adjust multiple uneven locations on the bonding surface of the first bonding structure at the same time. This can improve the efficiency and accuracy of the bonding device in adjusting the shape of the first bonding structure, and further improve the bonding quality and bonding strength between the first bonding structure and other bonding structures.

[0086] In some embodiments, the deformation portion may include a rigid piezoelectric material, and the control portion is used to apply a first voltage to two opposite sides of the deformation portion along a first direction so that the deformation portion has a first deformation amount in the first direction; the control portion is also used to apply a second voltage to two opposite sides of the deformation portion along a second direction so that the deformation portion has a second deformation amount in the second direction; the first direction and the second direction intersect, and the first direction and the second direction are perpendicular to the thickness direction of the deformation portion.

[0087] In some embodiments, the size, quantity and direction of the voltage applied by the control part to the deformation part may be determined according to the shape of the bonding surface of the first bonding structure.

[0088] It should be noted that the description of the above bonding method is similar to the description of the above bonding device embodiment, and has similar beneficial effects as the bonding device embodiment. For technical details not disclosed in the bonding method embodiment of the present disclosure, please refer to the description of the bonding device embodiment of the present disclosure for understanding.

[0089] The disclosed embodiment provides a bonding device and a bonding method, wherein the bonding device includes a bonding assembly, and the bonding assembly includes a control part and a deformation part; the control part surrounds the deformation part, and the control part is used to apply a voltage to the deformation part to deform the deformation part and drive the first bonding structure to deform. The disclosed embodiment uses the control part to apply a voltage to the deformation part to deform the deformation part and drive the first bonding structure to deform, so that the bonding surface of the first bonding structure is in a shape that is conducive to the bonding process, which is conducive to improving the bonding quality and bonding strength.

[0090] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present disclosure, the size of the serial number of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present disclosure. The serial numbers of the embodiments of the present disclosure are for description only and do not represent the advantages and disadvantages of the embodiments.

[0091] The above description is only a preferred embodiment of the present disclosure, and does not limit the patent scope of the present disclosure. All equivalent structural changes made by using the contents of the present disclosure and the drawings under the inventive concept of the present disclosure, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present disclosure.

Claims

1. A bonding device, characterized in that: A bonding assembly includes a control portion and a deformation portion; The control part surrounds the deformation part, and is used for applying voltage to the deformation part to make the deformation part deform and drive the first bonding structure to deform.

2. The bonding device according to claim 1, characterized in that The deformation portion includes a plurality of sub-deformation portions, and the control portion surrounds each of the sub-deformation portions.

3. The bonding device according to claim 1, characterized in that The deformation portion includes at least one deformation layer, and the deformation layer includes a rigid piezoelectric material.

4. The bonding device according to claim 1, characterized in that: The control part is used to apply a voltage to the deformation part so that the deformation part is deformed in a direction away from the control part.

5. The bonding device according to claim 1, characterized in that: The control unit is used to apply a first voltage to two opposite sides of the deformation unit along a first direction so that the deformation unit has a first deformation amount in the first direction; the control unit is also used to apply a second voltage to two opposite sides of the deformation unit along a second direction so that the deformation unit has a second deformation amount in the second direction; the first direction and the second direction intersect, and the first direction and the second direction are perpendicular to the thickness direction of the deformation unit.

6. The bonding device according to claim 1, characterized in that: The bonding assembly further includes a protection portion; The protection portion at least covers a side of the deformation portion away from the control portion, and the protection portion includes a flexible material layer.

7. The bonding device according to claim 1, characterized in that: Also included is a vacuum device and a plurality of through holes extending through the bonding assembly; The vacuum device is connected to the bonding component and is used to adsorb the first bonding structure onto the bonding component through the multiple through holes.

8. The bonding device according to claim 1, characterized in that: Also included is a scanning device; The scanning device is used to obtain the deformation parameters of the first bonding structure; and determine the voltage applied by the control unit to the deformation unit according to the deformation parameters, so that the deformation unit undergoes corresponding deformation.

9. A bonding method, characterized in that: Bonding is performed using the bonding device according to any one of claims 1 to 8, the method comprising: acquiring the first bonding structure; applying a voltage to the deformable portion through the control portion to cause the deformable portion to deform; The deformation portion drives the first bonding structure to deform; The first bonding structure is bonded to the second bonding structure.

10. The bonding method according to claim 9, characterized in that: The method further comprises: A deformation parameter of the first bonding structure is acquired, and a voltage applied by the control unit to the deformation unit is determined according to the deformation parameter, so that the deformation unit undergoes corresponding deformation.

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