Semiconductor element with porous layer

Abstract

The invention discloses a semiconductor element. The semiconductor element comprises a substrate; a bottom inner connection layer disposed in the substrate; a bottom dielectric layer disposed on the substrate; an inner connection structure disposed along the bottom dielectric layer, disposed on the bottom inner connection layer, and disposed on the bottom dielectric layer; a top cementing layer conformally disposed on the bottom dielectric layer and surrounding the inner connection structure; a top dielectric layer is disposed around the top cementing layer. A top surface of the top cementing layer is substantially coplanar with a top surface of the inner connection structure. The top dielectric layer is porous.

Description

[0001] This application is a divisional application of Chinese invention patent application No. 2023110439828, filed on August 18, 2023, with the invention name of “Semiconductor element with porous layer”. Application No. 2023110439828 claims priority and benefits of U.S. formal application No. 18 / 199,455 filed on May 19, 2023. The contents of the U.S. formal application are incorporated herein by reference in their entirety. Technical Field

[0002] The present disclosure relates to a semiconductor element and a method for preparing the same, and in particular to a semiconductor element having a porous layer and a method for preparing the same. Background Art

[0003] Semiconductor components are used in a variety of electronic applications, such as personal computers, mobile phones, digital cameras, and other electronic devices. To meet the growing demand for computing power, the size of semiconductor components continues to shrink. However, various problems arise during the shrinking process, and these problems are increasing. Therefore, there are still challenges in improving the performance, quality, yield, efficiency, and reliability of semiconductor components.

[0004] The above “prior art” description is only to provide background technology, and does not admit that the above “prior art” description reveals the subject matter of the present disclosure, does not constitute the prior art of the present disclosure, and any description of the above “prior art” should not be regarded as any part of this case. Summary of the invention

[0005] One aspect of the present disclosure provides a semiconductor device, comprising a substrate; a bottom interconnect layer disposed in the substrate; a bottom dielectric layer disposed on the bottom adhesive layer; an interconnect structure disposed along the bottom dielectric layer, disposed on the bottom interconnect layer, and disposed on the bottom dielectric layer; a top adhesive layer conformally disposed on the bottom dielectric layer and surrounding the interconnect structure; a top dielectric layer disposed around the top adhesive layer. The top surface of the top adhesive layer is substantially coplanar with the top surface of the interconnect structure. The top dielectric layer is porous.

[0006] Due to the design of the semiconductor element disclosed in the present invention, the parasitic capacitance of the semiconductor element can be reduced by using a bottom dielectric layer with a low dielectric constant. As a result, the performance of the semiconductor element will be improved. In addition, the top glue layer can improve the adhesion between the bottom dielectric layer and the top dielectric layer.

[0007] The above has outlined the technical features and advantages of the present disclosure in a fairly broad manner, so that the detailed description of the present disclosure below can be better understood. Other technical features and advantages that constitute the subject matter of the claims of the present disclosure will be described below. It should be understood by those with ordinary knowledge in the technical field to which the present disclosure belongs that the concepts and specific embodiments disclosed below can be used to modify or design other structures or processes to achieve the same purpose as the present disclosure. It should also be understood by those with ordinary knowledge in the technical field to which the present disclosure belongs that such equivalent constructions cannot depart from the spirit and scope of the present disclosure as defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] A more complete understanding of the disclosure of the present application may be obtained by referring to the embodiments and claims in conjunction with the drawings, in which the same reference numerals refer to the same elements.

[0009] Figure 1 is a flow chart illustrating a method for preparing a semiconductor element according to an embodiment of the present disclosure;

[0010] Figures 2 to 15 is a cross-sectional view illustrating a process of manufacturing a semiconductor device in one embodiment of the present disclosure; and

[0011] Figures 16 to 18 is a cross-sectional view illustrating a process of manufacturing a semiconductor device in another embodiment of the present disclosure.

[0012] The reference numerals are described as follows:

[0013] 1A: Semiconductor components

[0014] 1B: Semiconductor components

[0015] 10: Methods

[0016] 101: Base

[0017] 103: Bottom inner connection layer

[0018] 105: Covering dielectric layer

[0019] 201: Bottom glue layer

[0020] 203: Top glue layer

[0021] 203TS: Top

[0022] 301: Bottom dielectric layer

[0023] 303: Top dielectric layer

[0024] 303TS: Top surface

[0025] 400: Inner connection structure

[0026] 401: Barrier

[0027] 403: Conductive layer

[0028] 403-1: Nucleation Section

[0029] 403-3: Block

[0030] 403-3V: Vertical segment

[0031] 403-3H: Horizontal segment

[0032] 405: Hard Mask Layer

[0033] 405TS: Top

[0034] 501: Bottom energy removable layer

[0035] 501TS: Top

[0036] 503: Top Energy Removable Layer

[0037] 503TS: Top

[0038] 505: Barrier Materials

[0039] 507: Conductive material

[0040] 507-1: Nucleation Section

[0041] 507-3: Block

[0042] 601: First mask layer

[0043] R1: First depression

[0044] S11: Steps

[0045] S13: Steps

[0046] S15: Steps

[0047] S17: Steps

[0048] T1: Thickness

[0049] T2: Thickness

[0050] T3: Thickness

[0051] VL1: Vertical Level

[0052] W1: Width

[0053] W2: Width

[0054] W3: Width

[0055] W4: Width

[0056] Z: Direction DETAILED DESCRIPTION

[0057] The following description of the present disclosure is accompanied by the drawings which are incorporated into and constitute a part of the specification, and illustrate embodiments of the present disclosure, but the present disclosure is not limited to the embodiments. In addition, the following embodiments can be appropriately integrated to complete another embodiment.

[0058] "One embodiment", "an embodiment", "an exemplary embodiment", "another embodiment", "another embodiment", etc. mean that the embodiment described in the present disclosure may include specific features, structures or characteristics, but not every embodiment must include the specific features, structures or characteristics. Furthermore, repeated use of the phrase "in an embodiment" does not necessarily refer to the same embodiment, but it can be the same embodiment.

[0059] In order to make the present disclosure fully understood, the following description provides detailed steps and structures. Obviously, the implementation of the present disclosure will not be limited to the specific details known to those skilled in the art. In addition, the known structures and steps are no longer described in detail to avoid unnecessarily limiting the present disclosure. The preferred embodiments of the present disclosure are described in detail below. However, in addition to the detailed description, the present disclosure can also be widely implemented in other embodiments. The scope of the present disclosure is not limited to the content of the detailed description, but is defined by the claims.

[0060] In the present disclosure, a semiconductor element generally refers to a device that can function by utilizing semiconductor characteristics, and electro-optical elements, light-emitting display elements, semiconductor circuits, and electronic components all fall into the category of semiconductor elements.

[0061] It should be noted that, in the description of the present disclosure, the upper side (or up) corresponds to the direction of the arrow in the Z direction, and the lower side (or down) corresponds to the opposite direction of the arrow in the Z direction.

[0062] It should be noted that, in the description of the present disclosure, the term "formation" refers to any method of creating, establishing, patterning, implanting or depositing an element, a dopant or a material, including, but not limited to, atomic layer deposition, chemical vapor deposition, physical vapor deposition, sputtering, co-sputtering, spin coating, diffusion, deposition, crystal growth, implantation, lithography, dry etching and wet etching.

[0063] It should be noted that in the description of the present disclosure, the functions or steps mentioned herein may appear in a different order than the order marked in the drawings. For example, depending on the functions or steps involved, two consecutively displayed diagrams may actually be executed substantially simultaneously or may sometimes be executed in the opposite order.

[0064] Figure 1 1 is a flow chart illustrating a method 10 for manufacturing a semiconductor device 1A according to an embodiment of the present disclosure. Figures 2 to 15 2 is a cross-sectional view illustrating a process of manufacturing a semiconductor device 1A in one embodiment of the present disclosure.

[0065] Reference Figures 1 to 5 In step S11, a substrate 101 is provided, a bottom inner connection layer 103 is formed in the substrate 101, a bottom adhesive layer 201 is formed on the substrate 101, a bottom energy removable layer 501 is formed on the bottom adhesive layer 201, and a first recess R1 is formed to expose the bottom inner connection layer 103.

[0066] Reference Figure 2 The substrate 101 may include a bulk semiconductor substrate composed entirely of at least one semiconductor material, a plurality of device elements (not shown for clarity), a plurality of dielectric layers (not shown for clarity), and a plurality of conductive features (not shown for clarity). The bulk semiconductor substrate may be formed of elemental semiconductors such as silicon, germanium, compound semiconductors such as silicon germanium, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, indium antimonide, or other III-V compound semiconductors or II-VI compound semiconductors, or a combination thereof.

[0067] In some embodiments, substrate 101 includes a semiconductor-on-insulator structure, which consists of a processing substrate, an insulator layer, and a topmost semiconductor material layer from bottom to top. The processing substrate and the topmost semiconductor material layer are formed of the same material as the bulk semiconductor substrate described above. The insulator layer is a crystalline or non-crystalline dielectric material, such as an oxide and / or a nitride. For example, the insulator layer can be a dielectric oxide, such as silicon oxide. For another example, the insulator layer can be a dielectric nitride, such as silicon nitride or boron nitride. For another example, the insulator layer includes a stack of dielectric oxides and dielectric nitrides, such as silicon oxide and silicon nitride or boron nitride stacked in any order. The insulator layer has a thickness between about 10 nm and about 200 nm.

[0068] It should be noted that in the description of the present disclosure, the term "approximately" changes the amount of the ingredients, components or reactants of the present disclosure, for example, by the typical measurement and liquid handling procedures used for preparation. Changes may also arise from unintentional errors in the measurement procedures, differences in the preparation, source or purity of the ingredients used in the preparation of the composition or implementation of the method. In one aspect, the term "approximately" refers to changes within 10% of the value shown. In other aspects, the term "approximately" refers to changes within 5% of the value shown. In other aspects, the term "approximately" refers to changes within 10%, 9%, 8%, 7%, 6%, 5%, 4%, 3%, 2%, or 1% of the value shown.

[0069] A plurality of device elements may be formed on the substrate 101. Some portions of the device elements may be formed in the substrate 101. The device elements may be transistors, such as complementary metal oxide semiconductor transistors, metal oxide semiconductor field effect transistors, fin field effect transistors, etc., or combinations thereof.

[0070] The dielectric layer may be formed on the substrate 101 and cover the device elements. In some embodiments, the dielectric layer may be formed of, for example, silicon oxide, borophosphosilicate glass, undoped silicate glass, fluorinated silicate glass, low-k dielectric material, or the like, or a combination thereof. The low-k dielectric material has a dielectric constant of less than 3.0 or even less than 2.5. In some embodiments, the low-k dielectric material may have a dielectric constant of less than 2.0. The dielectric layer may be formed by a deposition process such as chemical vapor deposition, plasma enhanced chemical vapor deposition, or the like. A planarization process is performed after the deposition process to remove excess material and provide a substantially flat surface for subsequent processing steps.

[0071] Conductive features include interconnect layers, conductive vias, and conductive pads. The interconnect layers are separated from each other and are horizontally arranged in the dielectric layer along the Z direction. In the present embodiment, the topmost interconnect layer is regarded as a conductive pad. The conductive vias connect adjacent interconnect layers, adjacent device elements and interconnect layers, and adjacent conductive pads and interconnect layers along the Z direction. In some embodiments, the conductive vias can improve heat dissipation and can provide structural support. In some embodiments, the conductive features can be formed by, for example, tungsten, cobalt, zirconium, tantalum, titanium, aluminum, ruthenium, copper, metal carbides (e.g., tantalum carbide, titanium carbide, tantalum magnesium carbide), metals forming nitrides (e.g., titanium nitride), transition metal aluminides, or combinations thereof. The conductive features can be formed during the formation of the dielectric layer.

[0072] In some embodiments, the device elements and the conductive features together constitute a plurality of functional units in the semiconductor device 1A. In the description of the present disclosure, a functional unit generally refers to a functionally related circuit that is divided into different units for functional purposes. In some embodiments, the functional units of the semiconductor device 1A may include, for example, highly complex circuits such as a processor core, a memory controller, an accelerator unit, or other applicable functional circuits.

[0073] Reference Figure 2, the bottom inner connection layer 103 can be considered as part of the conductive features of the substrate 101. In some embodiments, the bottom inner connection layer 103 can be formed of, for example, tungsten, cobalt, zirconium, tantalum, titanium, aluminum, ruthenium, copper, metal carbides (e.g., tantalum carbide, titanium carbide, tantalum magnesium carbide), metal nitrides (e.g., titanium nitride), transition metal aluminides, or combinations thereof. In some embodiments, the top surface of the substrate 101 and the top surface of the bottom inner connection layer 103 can be substantially coplanar.

[0074] Reference Figure 3 , forming a bottom glue layer 201 on the substrate 101. In some embodiments, the bottom glue layer 201 can be formed of a low porous dielectric material. For example, the porosity of the bottom glue layer 201 can be less than 5%, less than 4%, less than 3%, less than 2%, less than 1%, or 0%. In some embodiments, the bottom glue layer 201 can be formed of, for example, silicon oxide. In some embodiments, the bottom glue layer 201 can be formed of a material having an etching selectivity to the bottom energy removable layer 501, which will be described later. In some embodiments, the bottom glue layer 201 can be formed of a material having an etching selectivity to aluminum, copper, or tungsten. In some embodiments, the bottom glue layer 201 can be formed of, for example, silicon nitride, silicon oxynitride, silicon oxynitride, or a combination thereof. In some embodiments, the bottom glue layer 201 can be formed by, for example, atomic layer deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, or other applicable deposition processes. In some embodiments, the bottom glue layer 201 can improve the adhesion between the substrate 101 and the bottom energy removable layer 501 .

[0075] It should be noted that in the description of the present disclosure, silicon oxynitride refers to a substance containing silicon, nitrogen and oxygen, wherein the proportion of oxygen is greater than the proportion of nitrogen. Silicon oxynitride refers to a substance containing silicon, oxygen and nitrogen, wherein the proportion of nitrogen is greater than the proportion of oxygen.

[0076] Reference Figure 4, forming a bottom energy removable layer 501 on the bottom adhesive layer 201. In some embodiments, the bottom energy removable layer 501 includes a material that is a thermally decomposable material, a photon decomposable material, an electron beam decomposable material, or a combination thereof. For example, the bottom energy removable layer 501 may include a substrate material and a decomposable porogen material that is sacrificially removed when exposed to an energy source. The substrate material includes a material based on methylsilsesquioxane. The decomposable porogen material may include a porogen organic compound that provides porosity to the substrate material of the bottom energy removable layer 501.

[0077] In some embodiments, the bottom energy removable layer 501 may include about 50% of the decomposable porogen material and about 50% of the substrate material. In some embodiments, the bottom energy removable layer 501 may include about 45% of the decomposable porogen material and about 55% of the substrate material. In some embodiments, the bottom energy removable layer 501 may include about 35% of the decomposable porogen material and about 65% of the substrate material. In some embodiments, the bottom energy removable layer 501 may include about 25% of the decomposable porogen material and about 75% of the substrate material. In some embodiments, the bottom energy removable layer 501 may include about 15% of the decomposable porogen material and about 85% of the substrate material. In some embodiments, the bottom energy removable layer 501 may include about 10% of the decomposable porogen material and about 90% of the substrate material.

[0078] Reference Figure 4 , forming a first mask layer 601 on the bottom energy removable layer 501. In some embodiments, the first mask layer 601 may be a photoresist layer and include a pattern of a first recess R1, which will be described later. The pattern of the first mask layer 601 may be formed by a lithography process. The unpatterned first mask layer 601 ( Figure 4 ) can be based on the mask ( Figure 4 The process light (not shown) is exposed to process light (process light). The wavelength of the process light can be associated with the critical dimension of the pattern. In some embodiments, the process light can be deep ultraviolet (DUV). In some embodiments, the process light can be extreme ultraviolet (EUV), and the lithography process can be EUV lithography. After exposure to the process light, the pattern on the mask is converted to the unpatterned first mask layer 601, and then the unpatterned first mask layer 601 can be etched according to the converted pattern, thereby forming a pattern on the first mask layer 601.

[0079] Reference Figure 5 , a first recess etching process is performed to remove a portion of the bottom energy removable layer 501 and the bottom glue layer 201. In some embodiments, the first recess etching process may be a multi-stage etching process. For example, the first recess etching process may be a two-stage anisotropic dry etching process. The etching chemistry of each stage may be different to provide different etching selectivities. In some embodiments, during the first stage of the first recess etching process, the etching rate ratio of the bottom energy removable layer 501 to the bottom glue layer 201 may be between about 100:1 and about 1.05:1, between about 15:1 and about 2:1, or between about 10:1 and about 2:1. In some embodiments, during the second stage of the first recess etching process, the etching rate ratio of the bottom glue layer 201 to the bottom inner connection layer 103 may be between about 100:1 and about 1.05:1, between about 15:1 and about 2:1, or between about 10:1 and about 2:1.

[0080] Reference Figure 5 After the first recess etching process, a first recess R1 may be formed along the bottom energy removable layer 501 and the bottom glue layer 201. The bottom inner connection layer 103 may be partially exposed through the first recess R1. In some embodiments, a width W2 of the first recess R1 may be smaller than a width W1 of the bottom inner connection layer 103. After forming the first recess R1, the first mask layer 601 may be removed.

[0081] Reference Figure 1 and Figures 6 to 10 In step S13 , an inner connection structure 400 is formed in the first recess R1 and on the bottom inner connection layer 103 and the bottom energy removable layer 501 .

[0082] Reference Figure 6 , a layer of barrier material 505 is conformally formed in the first recess R1, on the bottom interconnect layer 103 and on the bottom energy removable layer 501. In some embodiments, the barrier material 505 may include, for example, titanium, titanium nitride, tantalum, tantalum nitride, or a combination thereof. In some embodiments, the barrier material 505 may be formed by, for example, chemical vapor deposition, atomic layer deposition, plasma enhanced chemical vapor deposition, or other applicable deposition processes.

[0083] For example, the layer of barrier material 505 can be formed by chemical vapor deposition. In some embodiments, the formation of the layer of barrier material 505 may include a source gas introducing step, a first purging step, a reactant flowing step, and a second purging step. The source gas introducing step, the first purging step, the reactant flowing step, and the second purging step can be regarded as one cycle. Multiple cycles can be performed to obtain the desired thickness of the layer of barrier material 505.

[0084] In detail, Figure 5 The semiconductor component semi-finished product shown in can be loaded in the reaction chamber. In the source gas introduction step, the source gas containing the precursor and the reactant can be introduced into the reaction chamber containing the semiconductor component semi-finished product. The precursor and the reactant can diffuse through the boundary layer and reach the surface of the semiconductor component semi-finished product (that is, the surface of the bottom energy removable layer 501, the first recess R1 and the bottom inner connection layer 103). The precursor and the reactant can be adsorbed on the above-mentioned surface and then migrate on the above-mentioned surface. The adsorbed precursor and the adsorbed reactant can react on the above-mentioned surface and form solid by-products. The solid by-products can form nuclei on the above-mentioned surface. The nucleus can grow into an island, and the island can merge into a continuous film on the above-mentioned surface. In the first purge step, a purge gas such as argon gas can be injected into the reaction chamber to purge out gaseous by-products, unreacted precursors and unreacted reactants.

[0085] In the reactant flow step, reactants may be introduced individually into the reaction chamber to transform a continuous thin film into a layer of barrier material 505. In the second purge step, a purge gas such as argon may be injected into the reaction chamber to purge out gaseous byproducts and unreacted reactants.

[0086] In some embodiments, forming the layer of barrier material 505 using chemical vapor deposition can be performed with the aid of a plasma. The plasma source can be, for example, argon, hydrogen, or a combination thereof.

[0087] In some embodiments, the precursor may be titanium tetrachloride. The reactant may be ammonia. Due to the incomplete reaction between titanium tetrachloride and ammonia, titanium tetrachloride and ammonia may react on the surface and form a titanium nitride film containing high chloride contamination. The ammonia in the reactant flow step may reduce the chloride content of the titanium nitride film. After the ammonia treatment, the titanium nitride film may be considered as a layer of barrier material 505.

[0088] For another example, the layer of barrier material 505 can be formed by atomic layer deposition, such as light-assisted atomic layer deposition or liquid injection atomic layer deposition. In some embodiments, the formation of the layer of barrier material 505 can include a first precursor introduction step, a first purge step, a second precursor introduction step, and a second purge step. The first precursor introduction step, the first purge step, the second precursor introduction step, and the second purge step can be regarded as one cycle. Multiple cycles can be performed to obtain the desired thickness of the layer of barrier material 505.

[0089] In detail, Figure 5 The semiconductor element semi-finished product shown in can be loaded in the reaction chamber. In the first precursor introduction step, the first precursor can be introduced into the reaction chamber. The first precursor can diffuse across the boundary layer and reach the surface of the semiconductor element semi-finished product (i.e., the surface of the bottom energy removable layer 501, the first recess R1 and the bottom inner connection layer 103). The first precursor can be adsorbed on the above-mentioned surface to form a monolayer at the single atomic level. In the first purge step, a purge gas such as argon can be injected into the reaction chamber to purge out the unreacted first precursor.

[0090] In the second precursor introduction step, the second precursor may be introduced into the reaction chamber. The second precursor may react with the monolayer and convert the monolayer into a layer of barrier material 505. In the second purge step, a purge gas such as argon may be injected into the reaction chamber to purge out the unreacted second precursor and gaseous byproducts. Compared to chemical vapor deposition, since the first precursor and the second precursor are introduced separately, particle generation caused by gas phase reactions may be suppressed.

[0091] In some embodiments, the first precursor may be titanium tetrachloride. The second precursor may be ammonia. The adsorbed titanium tetrachloride may form a titanium nitride monolayer. The ammonia in the second precursor introduction step may react with the titanium nitride monolayer and convert the titanium nitride monolayer into a layer of barrier material 505.

[0092] In some embodiments, forming the layer of barrier material 505 using atomic layer deposition can be performed with the aid of a plasma. The plasma source can be, for example, argon, hydrogen, oxygen, or a combination thereof. In some embodiments, the oxygen source can be, for example, water, oxygen, or ozone. In some embodiments, co-reactants can be introduced into the reaction chamber. The co-reactants can be selected from hydrogen, hydrogen plasma, oxygen, air, water, ammonia, hydrazine, alkylhydrazine, borane, silane, ozone, and a combination thereof.

[0093] In some embodiments, the formation of the layer of barrier material 505 may be performed using the following process conditions: The substrate temperature may be between about 160° C. and about 300° C. The evaporator temperature may be about 175° C. The pressure of the reaction chamber may be about 5 mbar. The solvent of the first precursor and the second precursor may be toluene.

[0094] Reference Figure 7 and Figure 8 , conformally forming a nucleation portion 507 - 1 on the layer of barrier material 505 and forming a block portion 507 - 3 on the nucleation portion 507 - 1 , wherein the nucleation portion 507 - 1 and the block portion 507 - 3 together constitute a layer of conductive material 507 .

[0095] In some embodiments, the conductive material 507 may include tungsten. Tungsten is particularly useful in gates and word lines and bit lines in dynamic random access memory types of integrated circuit components because it has thermal stability to cope with subsequent high temperature processes, where the process temperature may reach 900°C or higher. In addition, tungsten is a high refractive index material with good oxidation resistance and low resistivity.

[0096] In some embodiments, nucleation portion 507-1 may be a thin conformal layer for facilitating subsequent formation of bulk material (i.e., bulk portion 507-3) thereon. A layer of compliant barrier material 505 is critical to supporting high quality deposition. In some embodiments, nucleation portion 507-1 may be formed by a pulsed nucleation layer method.

[0097] In a pulsed nucleation layer method, pulses of reactants (e.g., reductants or precursors) can be sequentially injected and purged from a reaction chamber, typically with pulses of purge gas between reactants. A first reactant can be adsorbed onto a substrate (e.g., a layer of barrier material 505) and available to react with the next reactant. The process is repeated in a cyclical manner until the desired thickness is reached. It should be noted that a pulsed nucleation layer method can generally be distinguished from atomic layer deposition by its higher operating pressure range (greater than 1 Torr) and its higher growth rate per cycle (greater than 1 monolayer growth per cycle). The chamber pressure during a pulsed nucleation layer method can range from about 1 Torr to about 400 Torr.

[0098] In some embodiments, the reactants forming the nucleation portion 507-1 may be, for example, a silicon-containing reducing agent and a tungsten-containing precursor. The layer of barrier material 505 may be first exposed to the silicon-containing reducing agent and then exposed to the tungsten-containing precursor to form the nucleation portion 507-1. Exposure to the silicon-containing reducing agent and the tungsten-containing precursor may be defined as a cycle and may be repeated until the desired thickness of the nucleation portion 507-1 is obtained.

[0099] Silanes and related compounds have been found to adsorb well onto surfaces of metal nitrides (e.g., titanium nitride and tungsten nitride) used as barrier materials in certain integrated circuit applications. Any suitable silane or silane derivative may be used as the silicon-containing reducing agent, including organic derivatives of silane. It is generally understood that silanes adsorb onto substrate surfaces in a self-limiting manner to produce a nominal monolayer of silane species. Thus, the amount of adsorbed species is largely independent of the amount of silane used.

[0100] In some embodiments, the substrate temperature during exposure to the silicon-containing reducing agent can be between about 200° C. and about 475° C., between about 300° C. and about 400° C., or about 300° C. In some embodiments, the chamber pressure during exposure to the silicon-containing reducing agent can be between about 1 Torr and about 350 Torr or fixed at about 40 Torr. The exposure time (or pulse time) will depend in part on the dose and chamber conditions. In some embodiments, the layer of barrier material 505 is exposed until the surface is at least fully and uniformly covered with a saturated layer of silane material. In some embodiments, the silicon-containing reducing agent can be provided alone. In some embodiments, the silicon-containing reducing agent can be provided with a carrier gas such as argon or an argon-hydrogen mixture.

[0101] In some embodiments, once the layer of barrier material 505 is sufficiently covered with the silane species, the flow of the silicon-containing reducing agent may be stopped. A purge process may be performed to purge residual gaseous reactants near the surface of the layer of barrier material 505. The purge process may be performed with a carrier gas such as argon, hydrogen, nitrogen, or helium.

[0102] In some embodiments, the tungsten-containing precursor may include tungsten hexafluoride, tungsten hexachloride, or tungsten hexacarbonyl. In some embodiments, the tungsten-containing precursor may include a fluorine-free organometallic compound, such as methylcyclopentadienyl-dicarbonylnitrosyl-tungsten (MDNOW) and ethylcyclopentadienyl-dicarbonylnitrosyl-tungsten (EDNOW). In some embodiments, the tungsten-containing precursor may be provided in a diluent gas, a companion gas such as argon, nitrogen, hydrogen, or a combination thereof.

[0103] In some embodiments, the substrate temperature during exposure to the tungsten-containing precursor may be between about 200° C. and about 475° C., between about 300° C. and about 400° C., or about 300° C. In some embodiments, the chamber pressure during exposure to the tungsten-containing precursor may be between about 1 Torr and about 350 Torr. The dose of the tungsten-containing precursor and the substrate exposure time (or pulse time) will vary according to many factors. Generally, exposure may be performed until the adsorbed silane species are sufficiently consumed by reaction with the tungsten-containing precursor to produce the nucleation portion 507-1. Thereafter, the flow of the tungsten-containing precursor may be stopped, and a purge process may be performed with a carrier gas such as argon, hydrogen, nitrogen, or helium.

[0104] Alternatively, in some embodiments, the reactants forming the nucleation portion 507-1 may be, for example, a boron-containing reducing agent and a tungsten-containing precursor. The layer of barrier material 505 may be first exposed to the boron-containing reducing agent and then exposed to the tungsten-containing precursor to form the nucleation portion 507-1. Exposure to the boron-containing reducing agent and the tungsten-containing precursor may be defined as a cycle and may be repeated until the desired thickness of the nucleation portion 507-1 is obtained.

[0105] In some embodiments, the boron-containing reducing agent may be, for example, borane, diborane, triborane, or a boron halide with hydrogen (e.g., BF3, BCl3). The tungsten-containing precursor may be a material similar to the above-mentioned tungsten-containing precursor, which will not be described in detail herein. In some embodiments, the boron-containing reducing agent may be provided in a diluent gas, a companion gas such as argon, nitrogen, hydrogen, silane, or a combination thereof. For example, diborane may be provided by a dilution source (e.g., 5% diborane and 95% nitrogen). In some embodiments, the substrate temperature during exposure to the boron-containing reducing agent may be between about 200° C. and about 475° C., between about 300° C. and about 400° C., or about 300° C. In some embodiments, the chamber pressure during exposure to the boron-containing reducing agent may be between about 1 Torr and about 350 Torr. In some embodiments, once the boron-containing reducing agent is deposited to a sufficient thickness, the flow of the boron-containing reducing agent may be stopped. The purge process may be performed with a carrier gas such as argon, hydrogen, nitrogen, or helium.

[0106] After exposure to the boron-containing reducing agent, the semi-finished semiconductor device may then be exposed to a tungsten-containing precursor. This process is similar to the process of exposure to the silicon-containing reducing agent followed by exposure to the tungsten-containing precursor, and will not be described in detail herein.

[0107] In some embodiments, the layer of barrier material 505 may be exposed to a boron-containing reducing agent and a tungsten-containing precursor prior to forming the nucleation portion 507-1 to pre-treat the layer of barrier material 505. The pre-treatment may include diborane.

[0108] In some embodiments, the exemplary data reveal that the diborane-based nucleation portion 507-1 can produce tungsten with a larger grain size in the initial stage of forming the nucleation portion 507-1. In contrast, the silane-based nucleation portion 507-1 can produce tungsten with a smaller grain size in the initial stage of forming the nucleation portion 507-1. That is, the bulk portion 507-3 deposited on the silane-based nucleation portion 507-1 can have fewer or no defects (e.g., gaps and voids).

[0109] Alternatively, the nucleation portion 507-1 can be formed by sequentially exposing to a silicon-containing reducing agent, a tungsten-containing precursor, a boron-containing reducing agent, and a tungsten-containing precursor. The four steps of exposure can be defined as a cycle. The entire four-step cycle can be repeated to form a nucleation portion 507-1 with a desired thickness. In a variation of the method, the first two steps of the cycle (sequential exposure to a silicon-containing reducing agent and a tungsten-containing precursor) can be repeated one or more times before contacting with a boron-containing reducing agent. In another variation, the last two steps of the cycle (sequential exposure to a boron-containing reducing agent and a tungsten-containing precursor) can be repeated one or more times after the first two steps are completed.

[0110] Alternatively, in some embodiments, the reactants forming the nucleation portion 507-1 may be, for example, a germanium-containing reducing agent and a tungsten-containing precursor. The layer of barrier material 505 may be first exposed to the germanium-containing reducing agent and then exposed to the tungsten-containing precursor to form the nucleation portion 507-1. In some embodiments, the germanium-containing reducing agent may be germanium, such as Ge n H n+4 ,Ge n H n+6 ,Ge n H n+8 and Ge n H m , wherein n is an integer from 1 to 10, and n is an integer different from m. Other germanium-containing compounds may also be used, such as alkyl germanium, alkyl germanium, amino germanium, carbon germanium, and halogen germanium. The tungsten-containing precursor may be a material similar to the above-mentioned tungsten-containing precursor, which will not be described in detail here.

[0111] An exemplary process for forming the nucleation portion 507 - 1 may be as follows.

[0112] first, Figure 6 The semi-finished semiconductor device of the embodiment shown can be exposed to a pulse of a germanium-containing reducing agent in a hydrogen environment to form a germanium layer on the layer of barrier material 505. In some embodiments, the ratio of hydrogen to the germanium-containing reducing agent can be about 10: 1, about 50: 1, about 70: 1, or about 100: 1. The presence of hydrogen can reduce the thickness of the deposition in each cycle, and reduce the resistivity of the deposited bulk portion 507-3.

[0113] In some embodiments, pulses of one or more additional reducing agents may be used, such as pulses of boron-containing or silicon-containing reducing agents. The additional reducing agents may be pulsed sequentially or simultaneously with the germanium-containing reducing agent. In some embodiments, the interval time pause between pulses may be between about 0.5 seconds and about 5 seconds. In some embodiments, pulses of germanium-containing reducing agents may be optional, and only pulses of boron-containing or silicon-containing reducing agents may be used.

[0114] In some embodiments, the duration of the pulse (or pulse time) may be between about 0.25 seconds and about 30 seconds, between about 0.25 seconds and about 5 seconds, or between about 0.5 seconds and about 3 seconds. The pulse may be sufficient to saturate or supersaturate the surface of the layer of barrier material 505. In some embodiments, a carrier gas such as argon, helium, or nitrogen may be used. In some embodiments, an optional purge process may be performed to purge excess germanium-containing reducing agent that is still in the gas phase and not adsorbed to the surface of the layer of barrier material 505. The purge process may be performed by flowing an inert gas at a fixed pressure to reduce the pressure of the chamber and re-pressurizing the chamber before starting another gas exposure.

[0115] Next, the semi-finished semiconductor device may be exposed to a pulse of a tungsten-containing precursor. The tungsten-containing precursor reacts with the deposited germanium layer to form elemental tungsten. In some embodiments, the duration of the pulse (or pulse time) may be between about 0.25 seconds and about 30 seconds, between about 0.25 seconds and about 5 seconds, or between about 0.5 seconds and about 3 seconds. The pulse may be sufficient to react with reactive sites on the surface of the layer of barrier material 505, and germanium is adsorbed on the surface. In some embodiments, the interval time pause between pulses may be between about 0.5 seconds and about 5 seconds.

[0116] In some embodiments, a carrier gas such as argon, helium, or nitrogen may be used. In some embodiments, exposure to the tungsten-containing precursor may be performed in a hydrogen environment. In some embodiments, an optional purge process may be performed to purge excess tungsten-containing precursor still in the gas phase that has not reacted with germanium adsorbed onto the surface of the layer of barrier material 505. The purge process may be performed by flowing an inert gas at a fixed pressure to reduce the pressure of the chamber and re-pressurizing the chamber before starting another gas exposure.

[0117] Finally, the exposure to the pulses of the germanium-containing reducing agent and the tungsten-containing precursor may be repeated until a desired thickness of nucleation portion 507-1 is deposited on the surface of the layer of barrier material 505. Each repeated exposure to the pulses of the germanium-containing reducing agent and the tungsten-containing precursor may be considered a cycle.

[0118] In some embodiments, the order in which the germanium-containing reducing agent and the tungsten-containing precursor are exposed to the pulses may be reversed such that the tungsten-containing precursor is pulsed first.

[0119] Reference Figure 8 , the block portion 507-3 may be formed on the nucleation portion 507-1 and completely fill the first recess R1. The block portion 507-3 may be formed by, for example, physical vapor deposition, atomic layer deposition, molecular layer deposition, chemical vapor deposition, in-situ free radical assisted deposition, metal organic chemical vapor deposition, molecular beam epitaxy, sputtering, electroplating, evaporation, ion beam deposition, electron beam deposition, laser assisted deposition, chemical solution deposition, or a combination thereof.

[0120] For example, deposition of bulk portion 507-3 using chemical vapor deposition can include flowing (or introducing) a tungsten-containing precursor and a co-reactant such as a reducing agent to a semi-finished semiconductor device including nucleation portion 507-1. Example process pressures can be between about 10 Torr and about 500 Torr. Example substrate temperatures can be between about 250° C. and about 495° C. The tungsten-containing precursor can be, for example, tungsten hexafluoride, tungsten chloride, or tungsten hexacarbonyl. The reducing agent can be, for example, hydrogen, silane, disilane, hydrazine, diborane, or germane.

[0121] In some embodiments, the grain size of tungsten of bulk portion 507 - 3 may be greater than 30 nm, greater than 50 nm, greater than 70 nm, greater than 80 nm, greater than 85 nm, or greater than 87 nm. In some embodiments, bulk portion 507 - 3 may include alpha phase tungsten.

[0122] A planarization process, such as chemical mechanical polishing, may be performed on the layer of conductive material 507 to provide a substantially planar surface for subsequent process steps.

[0123] Reference Fig. 9 , a hard mask layer 405 is formed on the layer of conductive material 507. In some embodiments, the width W3 of the hard mask layer 405 can be greater than the width W1 of the bottom inner connection layer 103. In some embodiments, the width W3 of the hard mask layer 405 and the width W1 of the bottom inner connection layer 103 can be substantially the same. In some embodiments, the width W3 of the hard mask layer 405 can be greater than the width W2 of the first recess R1.

[0124] In some embodiments, the hard mask layer 405 may be formed of, for example, a material having an etching selectivity to the conductive material 507 or the barrier material 505. In some embodiments, the hard mask layer 405 may be formed of, for example, silicon, silicon germanium, tetraethyl orthosilicate, silicon nitride, silicon oxynitride, silicon carbide, or the like, or a combination thereof. In some embodiments, the hard mask layer 405 may be formed by a deposition process such as chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition, or the like. The process temperature for forming the hard mask layer 405 may be less than 400°C.

[0125] In some embodiments, the hard mask layer 405 may be formed of, for example, boron nitride, silicon boron nitride, phosphorus boron nitride, boron carbon silicon nitride, etc. In some embodiments, the hard mask layer 405 may be formed by a film formation process and a treatment process. In detail, in the film formation process, a first precursor may be introduced above the layer of the conductive material 507 to form a boron-based layer, and the first precursor may be a boron-based precursor. Subsequently, in the treatment process, a second precursor may be introduced to react with the boron-based layer and turn the boron-based layer into the hard mask layer 405, and the second precursor may be a nitrogen-based precursor.

[0126] In some embodiments, the first precursor is an alkyl-substituted boron derivative such as diborane, borazine or borazine. In some embodiments, the second precursor can be introduced at a flow rate between about 5 sccm and about 50 slm or between about 10 sccm and about 1 slm. In some embodiments, the first precursor can be introduced by a diluent gas such as nitrogen, hydrogen, argon, or a combination thereof. The diluent gas can be introduced at a flow rate between about 5 sccm and about 50 slm or between about 1 slm and about 10 slm.

[0127] In some embodiments, the film forming process may be performed without plasma assistance. In this case, the substrate temperature of the film forming process may be between about 100° C. and about 1000° C. For example, the substrate temperature of the film forming process may be between about 300° C. and about 500° C. The process pressure of the film forming process may be between about 10 mTorr and about 760 Torr. For example, the process pressure of the film forming process may be between about 2 Torr and about 10 Torr.

[0128] In some embodiments, the film forming process may be performed in the presence of plasma. In this case, the substrate temperature of the film forming process may be between about 100°C and about 1000°C. For example, the substrate temperature of the film forming process may be between about 300°C and about 500°C. The process pressure of the film forming process may be between about 10mTorr and about 760Torr. For example, the process pressure of the film forming process may be between about 2Torr and about 10Torr. The plasma may be generated by an RF power between 2W and 5000W. For example, the RF power may be between 30W and 1000W.

[0129] In some embodiments, the second precursor can be, for example, ammonia or hydrazine. In some embodiments, the second precursor can be introduced at a flow rate between about 5 sccm and about 50 slm or between about 10 sccm and about 1 slm.

[0130] In some embodiments, oxygen-based precursors may be introduced during the process with the second precursor. The oxygen-based precursors may be, for example, oxygen, nitric oxide, nitrous oxide, carbon dioxide, or water.

[0131] In some embodiments, silicon-based precursors may be introduced during the process with the second precursor. The silicon-based precursors may be, for example, silane, trimethylsilylamine, trimethylsilane, or silazane (eg, hexamethylcyclotrisilazane).

[0132] In some embodiments, phosphorus-based precursors may be introduced during the process with the second precursor. The phosphorus-based precursor may be, for example, phosphine.

[0133] In some embodiments, an oxygen-based precursor, a silicon-based precursor, or a phosphorus-based precursor may be introduced together with the second precursor during the process.

[0134] In some embodiments, the treatment process may be performed with the assistance of a plasma process, a UV curing process, a thermal annealing process, or a combination thereof.

[0135] When the treatment is performed with the help of a plasma process. The plasma of the plasma process can be generated by RF power. In some embodiments, the RF power can be between about 2W and about 5000W at a single low frequency between about 100kHz and about 1MHz. In some embodiments, the RF power can be between about 30W and about 1000W at a single high frequency greater than about 13.6MHz. In this case, the substrate temperature of the treatment process can be between about 20°C and about 1000°C. The process pressure of the treatment process can be between about 10mTorr and about 760Torr.

[0136] When the treatment is performed with the aid of a UV curing process, in this case, the substrate temperature of the treatment process can be between about 20°C and about 1000°C. The process pressure of the treatment process can be between about 10mTorr and about 760Torr. UV curing can be provided by any UV source, such as a mercury microwave arc lamp, a pulsed xenon flash lamp, or an array of high-efficiency UV light emitting diodes. The UV source can have a wavelength between about 170nm and about 400nm. The UV source can provide a photon energy between about 0.5eV and about 10eV or a photon energy between about 1eV and about 6eV. The assistance of the UV curing process can remove hydrogen from the hard mask layer 405. Since hydrogen may diffuse into other areas of the semiconductor element 1A and may reduce the reliability of the semiconductor element 1A, removing hydrogen with the assistance of the UV curing process can improve the reliability of the semiconductor element 1A. In addition, the UV curing process can increase the density of the hard mask layer 405.

[0137] When the treatment is performed with the assistance of a thermal annealing process, in this case, the substrate temperature of the treatment process may be between about 20° C. and about 1000° C. The process pressure of the treatment process may be between about 10 mTorr and about 760 Torr.

[0138] Reference Fig.10, a first etching process can be performed using the hard mask layer 405 as a mask to remove portions of the conductive material 507 and the barrier material 505. In some embodiments, the first etching process can be a multi-stage etching process. For example, the first etching process can be a two-stage anisotropic dry etching process. The etching chemistry of each stage can be different to provide different etching selectivities. In some embodiments, during the first stage of the first etching process, the etching rate ratio of the conductive material 507 to the hard mask layer 405 can be between about 100:1 and about 1.05:1, between about 15:1 and about 5:1, or between about 10:1 and about 3:1. In some embodiments, during the first stage of the first etching process, the etching rate ratio of the conductive material 507 to the barrier material 505 can be between about 100:1 and about 1.05:1, between about 15:1 and about 5:1, or between about 10:1 and about 3:1.

[0139] In some embodiments, during the second stage of the first etching process, the etch rate ratio of the barrier material 505 to the hard mask layer 405 may be between about 100:1 and about 1.05:1, between about 15:1 and about 5:1, or between about 10:1 and about 3:1. In some embodiments, during the second stage of the first etching process, the etch rate ratio of the barrier material 505 to the bottom energy removable layer 501 may be between about 100:1 and about 1.05:1, between about 15:1 and about 5:1, or between about 10:1 and about 3:1.

[0140] Reference Fig.10 , after the first etching process, the remaining conductive material 507 can be regarded as the conductive layer 403. The remaining barrier material 505 can be regarded as the barrier layer 401. The barrier layer 401, the conductive layer 403 and the hard mask layer 405 together constitute the interconnect structure 400. The interconnect structure 400 can be formed on the bottom interconnect layer 103 and the bottom energy removable layer 501.

[0141] Reference Fig.10 , the conductive layer 403 may include a nucleation portion 403-1 and a bulk portion 403-3. The nucleation portion 403-1 of the conductive layer 403 may be formed by the nucleation portion 507-1 of the layer of conductive material 507. The bulk portion 403-3 of the conductive layer 403 may be formed by the bulk portion 507-3 of the layer of conductive material 507.

[0142] Reference Fig.10, the block portion 403-3 may include a vertical segment 403-3V and a horizontal segment 403-3H. The vertical segment 403-3V may be disposed on the bottom inner connection layer 103 and in the first recess R1. The top of the vertical segment 403-3V may protrude from the top surface 501TS of the bottom energy removable layer 501. In other words, the top surface of the vertical segment 403-3V may be at a vertical level VL1 higher than the top surface 501TS of the bottom energy removable layer 501. The bottom of the vertical segment 403-3V may be surrounded by the bottom glue layer 201. In some embodiments, the width W4 of the vertical segment 403-3V may be less than the width W3 of the hard mask layer 405.

[0143] Reference Fig.10 , the horizontal segment 403-3H may be disposed on the vertical segment 403-3V. In some embodiments, the horizontal segment 403-3H may have the same width W3 as the hard mask layer 405. In some embodiments, the width W3 of the horizontal segment 403-3H may be greater than the width W4 of the vertical segment 403-3V. In other words, the block portion 403-3 may have a T-shaped cross-sectional profile.

[0144] Reference Fig.10 , the barrier layer 401 may be conformally disposed between the conductive layer 403 and the bottom energy removable layer 501, between the conductive layer 403 and the bottom glue layer 201, and between the conductive layer 403 and the bottom inner connection layer 103. In detail, the barrier layer 401 may be conformally disposed between the horizontal segment 403-3H and the bottom energy removable layer 501, between the vertical segment 403-3V and the bottom energy removable layer 501, between the vertical segment 403-3V and the bottom glue layer 201, and between the vertical segment 403-3V and the bottom inner connection layer 103. The barrier layer 401 may improve the adhesion between the conductive layer 403 and the bottom energy removable layer 501, the bottom glue layer 201, and the bottom inner connection layer 103. The barrier layer 401 may also prevent metal ions from diffusing from the conductive layer 403 to the bottom energy removable layer 501 or the substrate 101.

[0145] Reference Fig.10 , the nucleation portion 403 - 1 may be conformally disposed between the barrier layer 401 and the bulk portion 403 - 3 .

[0146] Reference Figure 1 and Figures 11 to 13 In step S15 , a top glue layer 203 is conformally formed on the bottom energy removable layer 501 and the inner connection structure 400 , and a top energy removable layer 503 is formed around the top glue layer 203 .

[0147] Reference Fig.11, the top glue layer 203 may be conformally formed on the bottom energy removable layer 501 and cover the inner connection structure 400. In some embodiments, the thickness T1 of the top glue layer 203 may be greater than the thickness T2 of the barrier layer 401. In some embodiments, the thickness T1 of the top glue layer 203 and the thickness T2 of the barrier layer 401 may be substantially the same. In some embodiments, the thickness T1 of the top glue layer 203 may be greater than the thickness T3 of the bottom glue layer 201. In some embodiments, the thickness T1 of the top glue layer 203 may be less than the thickness T3 of the bottom glue layer 201. In some embodiments, the thickness T1 of the top glue layer 203 and the thickness T3 of the bottom glue layer 201 may be substantially the same.

[0148] In some embodiments, the top glue layer 203 may be formed of a low-porosity dielectric material. For example, the porosity of the top glue layer 203 may be less than 5%, less than 4%, less than 3%, less than 2%, less than 1%, or 0%. In some embodiments, the top glue layer 203 may be formed of, for example, silicon oxide. In some embodiments, the top glue layer 203 may be formed of a material having an etching selectivity to the bottom energy removable layer 501. In some embodiments, the top glue layer 203 may be formed of a material having an etching selectivity to aluminum, copper, or tungsten. In some embodiments, the top glue layer 203 may be formed of, for example, silicon nitride, silicon oxynitride, silicon oxynitride, or a combination thereof. In some embodiments, the top glue layer 203 may be formed by, for example, atomic layer deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, or other applicable deposition processes. In some embodiments, the top glue layer 203 and the bottom glue layer 201 may be formed of the same material, but are not limited thereto. In some embodiments, the top glue layer 203 can improve the adhesion between the bottom energy removable layer 501 and the top energy removable layer 503, which will be described later. In some embodiments, the top glue layer 203 can also improve the adhesion between the inner connection structure 400 and the top energy removable layer 503.

[0149] Reference Fig.12 , a top energy removable layer 503 may be formed on the top adhesive layer 203. In some embodiments, the top energy removable layer 503 includes a material that is a thermally decomposable material, a photon decomposable material, an electron beam decomposable material, or a combination thereof. For example, the top energy removable layer 503 may include a substrate material and a decomposable porogen material that is sacrificially removed when exposed to an energy source. The substrate material may include a methyl silsesquioxane-based material. The decomposable porogen material may include a porogen organic compound that provides porosity to the substrate material of the top energy removable layer 503.

[0150] In some embodiments, the proportion of the substrate material of the top energy removable layer 503 is less than the proportion of the substrate material of the bottom energy removable layer 501. In some embodiments, the top energy removable layer 503 may include about 55% of the decomposable porogen material and about 45% of the substrate material. In some embodiments, the top energy removable layer 503 may include about 65% of the decomposable porogen material and about 35% of the substrate material. In some embodiments, the top energy removable layer 503 may include about 75% of the decomposable porogen material and about 25% of the substrate material. In some embodiments, the top energy removable layer 503 may include about 85% of the decomposable porogen material and about 15% of the substrate material.

[0151] Reference Fig.13 A planarization process such as chemical mechanical polishing may be performed until the top surface 203TS of the top glue layer 203 is exposed to remove excess material and provide a substantially flat surface for subsequent process steps. After the planarization process, the top surface 203TS of the top glue layer 203 and the top surface 503TS of the top energy removable layer 503 may be substantially coplanar.

[0152] Reference Figure 1 , 14 and 15 , in step S17 , an energy treatment is performed to transform the bottom energy removable layer 501 into a bottom dielectric layer 301 , transform the top energy removable layer 503 into a top dielectric layer 303 , and form a cover dielectric layer 105 on the top dielectric layer 303 and the top adhesive layer 203 .

[0153] Reference Fig.14 , can be Fig.13 The semiconductor element semi-finished product in the embodiment of the present invention is subjected to energy treatment by applying an energy source thereto. The energy source may include heat, light, or a combination thereof. When heat is used as the energy source, the temperature of the energy treatment may be between about 800° C. and about 900° C. When light is used as the energy source, ultraviolet light may be used. The energy treatment may remove the decomposable porogen material from the bottom energy removable layer 501 and the top energy removable layer 503 to produce empty spaces (pores), while the substrate material remains in place. The empty space may be filled with air so that the dielectric constant of the layer containing the empty space may be very low.

[0154] After the energy treatment, the bottom energy removable layer 501 can become the bottom dielectric layer 301. The top energy removable layer 503 can become the top dielectric layer 303. The top surface 303TS of the top dielectric layer 303 and the top surface 203TS of the top glue layer 203 can be substantially coplanar. In some embodiments, both the bottom dielectric layer 301 and the top dielectric layer 303 can be porous. In some embodiments, the porosity of the top dielectric layer 303 can be greater than the porosity of the bottom dielectric layer 301. In some embodiments, the porosity of the bottom dielectric layer 301 can be greater than the porosity of the bottom glue layer 201 or the top glue layer 203. In some embodiments, the porosity of the bottom dielectric layer 301 can be between about 20% and about 50%. In some embodiments, the porosity of the top dielectric layer 303 can be about 50%.

[0155] Reference Fig.15 , forming a capping dielectric layer 105 on the top dielectric layer 303 and the top glue layer 203. In some embodiments, the capping dielectric layer 105 can be formed of, for example, silicon oxide, borophosphosilicate glass, undoped silicate glass, fluorinated silicate glass, a low-k dielectric material such as a spin-on low-k dielectric layer or a chemical vapor deposited low-k dielectric layer, or a combination thereof. The term "low-k" as used in the present disclosure refers to a dielectric material having a dielectric constant less than that of silicon dioxide. In some embodiments, the capping dielectric layer 105 may include a self-planarizing material such as spin-on glass or a self-planarizing material such as SiLK. TM The use of a self-planarizing dielectric material can avoid the need to perform a subsequent planarization step. In some embodiments, the capping dielectric layer 105 can be formed by a deposition process including, for example, chemical vapor deposition, plasma enhanced chemical vapor deposition, evaporation, or spin coating.

[0156] By using the bottom dielectric layer 301 and the top dielectric layer 303 having a low dielectric constant, the parasitic capacitance of the semiconductor element 1A will be reduced. As a result, the performance of the semiconductor element 1A will be improved. In addition, the barrier layer 401 can prevent the outgassing issues of the porous layer (i.e., the bottom dielectric layer 301 and the top dielectric layer 303) to avoid damage to the inner connection structure 400 and improve the reliability of the semiconductor element 1A. In addition, the bottom glue layer 201 and the top glue layer 203 can also improve the adhesion of the bottom dielectric layer 301 and the top dielectric layer 303.

[0157] Figures 16 to 18 2 is a cross-sectional view illustrating a process of manufacturing a semiconductor device 1B in another embodiment of the present disclosure.

[0158] Reference Fig.16 Semiconductor component semi-finished products can be used similar to Figures 2 to 12 The hard mask layer 405 is prepared by the process shown in , which will not be described in detail here. A planarization process such as chemical mechanical polishing can be performed until the top surface 405TS of the hard mask layer 405 is exposed to remove excess material and provide a substantially flat surface for subsequent process steps. The top surface 405TS of the hard mask layer 405, the top surface 203TS of the top glue layer 203, and the top surface 503TS of the top energy removable layer 503 can be substantially coplanar.

[0159] Reference Fig.17 , you can use something like Fig.14 The energy treatment is performed by the process shown in the figure, which will not be described in detail here. The top surface 405TS of the hard mask layer 405, the top surface 203TS of the top glue layer 203 and the top surface 303TS of the top dielectric layer 303 can be substantially coplanar.

[0160] Reference Fig.18 The capping dielectric layer 105 may be formed on the hard mask layer 405, the top glue layer 203 and the top dielectric layer 303, and the process is similar to Fig.15 The process shown in will not be repeated here.

[0161] One aspect of the present disclosure provides a semiconductor device, comprising a substrate; a bottom interconnect layer disposed in the substrate; a bottom dielectric layer disposed on the bottom adhesive layer; an interconnect structure disposed along the bottom dielectric layer, disposed on the bottom interconnect layer, and disposed on the bottom dielectric layer; a top adhesive layer conformally disposed on the bottom dielectric layer and surrounding the interconnect structure; a top dielectric layer disposed around the top adhesive layer. The top surface of the top adhesive layer is substantially coplanar with the top surface of the interconnect structure. The top dielectric layer is porous.

[0162] Due to the design of the semiconductor element of the present disclosure, the parasitic capacitance of the semiconductor element 1A can be reduced by using the bottom dielectric layer 301 and the top dielectric layer 303 with low dielectric constants. As a result, the performance of the semiconductor element 1A will be improved. In addition, the barrier layer 401 can prevent the outgassing problem of the porous layer (i.e., the bottom dielectric layer 301 and the top dielectric layer 303) to avoid damage to the inner connection structure 400 and improve the reliability of the semiconductor element 1A. In addition, the bottom glue layer 201 and the top glue layer 203 can also improve the adhesion of the bottom dielectric layer 301 and the top dielectric layer 303.

[0163] Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and replacements may be made without departing from the spirit and scope of the present disclosure as defined in the claims. For example, many of the above processes may be implemented in different ways, and other processes or combinations thereof may be used to replace many of the above processes.

[0164] Furthermore, the scope of the present application is not limited to the specific embodiments of the processes, machines, manufactures, compositions of matter, means, methods, and steps described in the specification. A person skilled in the art can understand from the disclosure of the present disclosure that existing or future developed processes, machines, manufactures, compositions of matter, means, methods, or steps that have the same functions or achieve substantially the same results as the corresponding embodiments described herein can be used according to the present disclosure. Accordingly, such processes, machines, manufactures, compositions of matter, means, methods, or steps are included in the claims of the present application.

Claims

1. A semiconductor element, comprising: a base; a bottom inner connecting layer disposed in the substrate; a bottom dielectric layer disposed on the substrate; an interconnect structure disposed along the bottom dielectric layer, disposed on the bottom interconnect layer, and disposed on the bottom dielectric layer; a top glue layer conformally disposed on the bottom dielectric layer and surrounding the interconnect structure; as well as a top dielectric layer surrounding the top glue layer, wherein the top surface of the top adhesive layer and the top surface of the inner connection structure are substantially coplanar; Wherein the top dielectric layer is porous.

2. The semiconductor device as claimed in claim 1, wherein the bottom dielectric layer is porous. 3 . The semiconductor device as claimed in claim 2 , wherein a porosity of the top dielectric layer is greater than a porosity of the bottom dielectric layer. The semiconductor device as claimed in claim 3 , wherein the porosity of the bottom dielectric layer is greater than the porosity of the top glue layer. 5 . The semiconductor device as claimed in claim 4 , further comprising a bottom glue layer disposed between the substrate and the bottom dielectric layer, wherein the bottom glue layer is made of the same material as the top glue layer.

6. The semiconductor device as claimed in claim 5, wherein the interconnect structure comprises a conductive layer comprising: a vertical segment disposed along the bottom dielectric layer and the bottom adhesive layer and disposed on the bottom inner connection layer; and A horizontal segment is disposed on the vertical segment and the bottom dielectric layer. The semiconductor device as claimed in claim 6 , wherein a width of the horizontal segment is greater than a width of the vertical segment.

8. The semiconductor device as claimed in claim 7, further comprising a hard mask layer disposed on the horizontal segment, The top surface of the top glue layer and the top surface of the hard mask layer are substantially coplanar. 9 . The semiconductor device as claimed in claim 8 , wherein a width of the hard mask layer is substantially the same as a width of the horizontal segment. 10 . The semiconductor device as claimed in claim 9 , further comprising a barrier layer disposed between the conductive layer and the bottom dielectric layer, between the conductive layer and the bottom glue layer, and between the conductive layer and the bottom interconnect layer.

Images