Multiple optoelectronic devices with thermal compensation

Abstract

An optical apparatus includes at least two optoelectronic devices fabricated on the same substrate and in thermal communication with each other. The first optoelectronic device is configured to generate an optical signal and provide the optical signal to the optical system via the optical output port. The second optoelectronic device is configured to provide thermal compensation to the first optoelectronic device. Electrical circuitry provides a first electrical signal to the first optoelectronic device and a second electrical signal to the second optoelectronic device. The electrical circuitry is configured to adjust at least the second electrical signal to controllably adjust a temperature of the first optoelectronic device.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation-in-part of U.S. patent application No. 18 / 167777, entitled “MULTIPLE OPTOELECTRONIC DEVICESWITH THERMAL COMPENSATION,” filed on February 10, 2023, which is a continuation-in-part of U.S. patent application No. 17 / 062,462, entitled “MULTIPLE OPTOELECTRONIC DEVICES WITH THERMAL COMPENSATION,” filed on October 2, 2020 and issued on February 14, 2023 as U.S. Patent No. 11581700, which claims the benefit of priority of U.S. Provisional Application No. 62 / 910,826, entitled “MULTIPLE OPTOELECTRONIC DEVICES WITH THERMAL COMPENSATION,” filed on October 4, 2019. The entire contents of each of the above patent applications are incorporated herein by reference. Background Art

[0002] The aspect ratio and manufacturing methods of optoelectronic devices (e.g., tunable lasers and tunable laser transmitters) may result in excess space relative to the size of the optoelectronic device. For example, most single-mode tunable lasers and tunable laser transmitters have waveguide ridges with a width of approximately 1 micron to 7 microns, while typical transmitter chips on which optoelectronic devices are manufactured are configured for easy cutting and handling, with a width in the range of 100 microns to 500 microns (e.g., in the range of 250 microns to 500 microns). A defect in any part of the optoelectronic device may cause the entire chip to be discarded, resulting in a decrease in yield and an increase in manufacturing costs.

[0003] In addition, the small footprint of optoelectronic devices may not be conducive to good thermal management. Accordingly, while a larger chip with a larger surface area can be beneficial for heat dissipation, such a chip may waste more space. Summary of the invention

[0004] In one aspect described herein, a device (e.g., an optical system) includes at least a first optoelectronic device and a second optoelectronic device, the first optoelectronic device and the second optoelectronic device being thermally connected to each other (e.g., the first optoelectronic device and the second optoelectronic device are formed on the same substrate, wafer, or chip). The device (optical system) further includes an optical output port in optical communication with the first optoelectronic device, the optical output port being configured to optically communicate with the optical system (e.g., via an optical adapter, a fiber optic connector, or a free-space optical coupler; an optical system outside a package or housing containing the first optoelectronic device and the second optoelectronic device). The device further includes (e.g., within a package or housing) an electrical (or electronic) circuit system in electrical communication with the first optoelectronic device, the electrical circuit system being configured to provide a first electrical signal to the first optoelectronic device, the first optoelectronic device generating an optical signal and heat in response to the first electrical signal. The electrical circuit system is further in electrical communication with the second optoelectronic device, the electrical circuit system being configured to provide a second electrical signal to the second optoelectronic device, the second optoelectronic device generating heat in response to the second electrical signal. The electrical circuit system is configured to controllably adjust the first electrical signal and the second electrical signal to controllably adjust the temperature of the first optoelectronic device. The electrical circuit system is further configured to adjust the second electrical signal to control thermal compensation generated by the second optoelectronic device.

[0005] In another aspect described herein, a method for manufacturing a device includes providing a substrate including at least a first optoelectronic device and a second optoelectronic device, the first optoelectronic device and the second optoelectronic device being thermally connected to each other. The method further includes connecting the first optoelectronic device and the second optoelectronic device to an electrical circuit system, the electrical circuit system being configured to provide a first electrical signal to the first optoelectronic device, the first optoelectronic device generating an optical signal and heat in response to the first electrical signal. The electrical circuit system is further configured to provide a second electrical signal to the second optoelectronic device, the second optoelectronic device generating at least heat in response to the second electrical signal. The electrical circuit system is further configured to control the first electrical signal and the second electrical signal, thereby controlling the temperature of the first optoelectronic device (e.g., keeping the temperature of the first optoelectronic device substantially constant). The method further includes establishing optical communication between the first optoelectronic device and the optical system and not establishing optical communication between the second optoelectronic device and the optical system.

[0006] In another aspect described herein, a method for operating a device includes providing a device including at least a first optoelectronic device and a second optoelectronic device, the first optoelectronic device and the second optoelectronic device being thermally connected to each other. The method further includes operating the first optoelectronic device to generate an optical signal and heat, and operating the second optoelectronic device to generate at least heat. The first optoelectronic device and the second optoelectronic device are operated so that the heat generated by the first optoelectronic device and the second optoelectronic device controls the temperature of the first optoelectronic device (e.g., the temperature of the first optoelectronic device) to remain substantially constant. For example, the temperature of the first device can be controlled so that the temperature of the first optoelectronic device (e.g., one or more sections of the first optoelectronic device) remains within ±1%, ±2%, ±3%, ±4%, ±5%, ±6%, ±7%, ±8%, ±10% or ±20% of the target temperature, or within any range between any of these values.

[0007] In another aspect described herein, the designs of the first optoelectronic device and the second optoelectronic device can be substantially similar to each other, such that each segment of the second optoelectronic device has a portion that can be biased to compensate for heating caused by providing an injection current to a corresponding segment of the first optoelectronic device configured to provide an optical signal (e.g., packaged, provided with an optical coupling element). In another aspect described herein, one or more segments of the second optoelectronic device can be configured to provide temperature controlled tuning of one or more segments of the first optoelectronic device (e.g., for fast tuning of a swept SGDBR) and / or reduce or minimize thermal crosstalk between segments of the first optoelectronic device (e.g., allowing a comb mirror of the first optoelectronic device to be used as a reference).

[0008] In another aspect, an apparatus includes an optoelectronic device configured to generate an optical signal and a thermal compensation device in thermal communication with the optoelectronic device. The apparatus further includes an electrical circuit system configured to provide at least a first electrical signal to the optoelectronic device and at least a second electrical signal to the thermal compensation device to controllably adjust a temperature of the optoelectronic device. The electrical circuit system is further configured to adjust a signal property of the second electrical signal based at least in part on a signal property of the first electrical signal to reduce a delay between a change in the second electrical signal and a corresponding adjustment of the temperature of the optoelectronic device.

[0009] In another aspect, an apparatus includes an optoelectronic device configured to generate an optical signal and a thermal compensation device in thermal communication with the optoelectronic device, the thermal compensation device having a current-voltage characteristic. The apparatus further includes an electrical circuit system configured to provide at least a first electrical signal to the optoelectronic device and at least a second electrical signal to the thermal compensation device to controllably adjust a temperature of the optoelectronic device. The electrical circuit system is further configured to asymmetrically adjust a signal property of the second electrical signal based at least in part on the current-voltage characteristic of the thermal compensation device. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In the following description of various embodiments, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of illustration various embodiments of the device. It is to be understood that other embodiments may be utilized and structural changes may be made.

[0011] Figure 1A An example apparatus including a first optoelectronic device, a second optoelectronic device, and an electrical circuit system is illustrated, wherein the first optoelectronic device is in optical communication with an optical system.

[0012] Figure 1B An example apparatus including a first optoelectronic device, a second optoelectronic device, and an electrical circuit system is illustrated, wherein the first optoelectronic device is in optical communication with an optical system via an optical coupler.

[0013] Figure 2A A top view of an example chip having a first tunable laser and a second tunable laser is illustrated, wherein each tunable laser includes two mirrors, a phase section, a gain section, an optical amplifier, and a back absorber.

[0014] Figure 2B A top view of an example chip having a first tunable laser emitter and a second tunable laser emitter is illustrated, wherein each tunable laser emitter includes two mirrors, a phase section, a gain section, an optical amplifier, a back absorber, and a modulator.

[0015] Figure 3 Illustrated are example relative variations of injection currents provided to a front mirror, a rear mirror, and a phase section of a tunable laser or tunable laser transmitter to tune the wavelength of an optical signal generated by the tunable laser transmitter.

[0016] Figure 4 The diagram illustrates heat generated by a section of the first optoelectronic device, heat generated by the section of the second optoelectronic device, and combined heat generated by the two sections when injection currents provided to the section of the first optoelectronic device and the section of the second optoelectronic device are modulated in opposite phases.

[0017] Figure 5A Schematically illustrated is a configuration of a chip comprising two optoelectronic devices mounted on a carrier and wire-bonded to electrical ports of the carrier such that the device on the left is wire-bonded to a port of an active device and the device on the right is wire-bonded to a port of a compensated thermal control.

[0018] Figure 5BSchematically illustrated is a configuration of a chip comprising two optoelectronic devices mounted on a carrier and wire-bonded to electrical ports of the carrier such that the device on the right is wire-bonded to a port of an active device and the device on the left is wire-bonded to a port of a compensating thermal control.

[0019] Figure 6 is a flow chart of an example method of making an apparatus including two optoelectronic devices, namely, selecting and connecting a first optoelectronic device to circuitry for optoelectronic control and selecting and connecting a second optoelectronic device to circuitry for generating thermal compensation for the first optoelectronic device.

[0020] Fig. 7A The heat dissipation rate of a photovoltaic device is schematically illustrated as a function of the current (I) supplied to the photovoltaic device.

[0021] Figure 7B An apparatus comprising a heat dissipating optoelectronic device in thermal communication with a light emitting optoelectronic device is schematically illustrated.

[0022] Fig. 8A and Figure 8B Schematically illustrates two example time variations of the current (I2) supplied to the thermal compensation device and the resulting heat transfer rate (H) from the thermal compensation device to the optoelectronic device. 21 ) changes. A) Increase the current to provide heat to the photovoltaic device. B) Reduce the current to absorb the heat of the photovoltaic device. The solid and dashed lines represent the current changes that lead to rapid and delayed thermal control, respectively.

[0023] Figure 8C Two example time variations of a current (I1) provided to a segment of a first optoelectronic device (e.g., a light emitting device) and a modified (pre-emphasized) current (I2) provided to a segment of a second optoelectronic device (e.g., a thermal compensation device) to stabilize the temperature of the first optoelectronic device are shown. DETAILED DESCRIPTION

[0024] Certain embodiments described herein advantageously utilize space on an optoelectronic chip (e.g., a substrate, a wafer) that would otherwise be wasted, thereby improving the yield of available devices. For example, the empty space on the substrate that is not occupied by a first optoelectronic device (e.g., a tunable laser or a tunable laser emitter) can be utilized by manufacturing at least one second optoelectronic device (e.g., similar to or identical to the first optoelectronic device) on the same chip (e.g., a substrate, a wafer) that is thermally connected to the first optoelectronic device and using a selected one of the first optoelectronic device and the at least one second optoelectronic device (e.g., selected based on the optical properties and / or performance of the first optoelectronic device and the at least one second optoelectronic device) to generate an optical signal, and using the first optoelectronic device and the at least one second optoelectronic device The other one of the first optoelectronic device and the at least one second optoelectronic device provides thermal compensation to the first optoelectronic device. By including at least one second optoelectronic device on the available excess space and allowing one of the two or more optoelectronic devices to be selected to generate an optical signal, the chip yield can be improved and the manufacturing cost can be reduced. In addition, the optoelectronic device selected to provide thermal compensation can improve the performance of the optoelectronic device selected to generate the optical signal by stabilizing the temperature of one or more sections of the optoelectronic device selected to generate the optical signal. In some examples, stabilizing the temperature of one or more sections of an optoelectronic device selected to generate an optical signal can help tune or adjust the wavelength of the optical signal (e.g., achieving monotonic wavelength tuning within a given wavelength range). In some examples, stabilizing the temperature of one or more sections of an optoelectronic device selected to generate an optical signal can improve the stability of the power or intensity of the generated optical signal. For example, the thermal compensation provided by the optoelectronic device selected for thermal compensation can maintain the light intensity or optical power within a range of ±1%, ±2%, ±3%, ±4%, ±5%, ±6%, ±7%, ±8%, ±10%, or ±20% of a target light intensity or optical power, or any range between any of these values. In some examples, stabilizing the temperature of one or more sections of an optoelectronic device selected to generate an optical signal can improve the stability of the wavelength of the optical signal. For example, the thermal compensation provided by the second optoelectronic device can maintain the wavelength of the optical signal within ±1%, ±2%, ±3%, ±4%, ±5%, ±6%, ±7%, ±8%, ±10% or ±20% of the target wavelength, or any range between any of these values.

[0025] Certain embodiments described herein advantageously improve the yield rate. For example, if one of the two or more optoelectronic devices is defective, another non-defective optoelectronic device of the two or more optoelectronic devices can be used to generate an optical signal, and the defective optoelectronic device can be used (e.g., mainly or only) to thermally compensate the non-defective optoelectronic device. For another example, if one of the two or more optoelectronic devices is suboptimal, another optimal optoelectronic device of the two or more optoelectronic devices can be used to generate an optical signal (e.g., packaged to provide an optical signal), and the suboptimal optoelectronic device is used (e.g., mainly or only) to thermally compensate the optimal optoelectronic device that generates the optical signal. For another example, the two or more optoelectronic devices may have different designs from each other (e.g., variations in parameter spaces of different optoelectronic devices), and the optoelectronic device having preferred, better, best, etc. operation (e.g., higher or lower based on a selected indicator (e.g., temporal variation of the light intensity or light power and / or wavelength of an optical signal generated by the optoelectronic device)) of the two or more optoelectronic devices may be used to generate an optical signal (e.g., packaged to provide an optical signal), while the optoelectronic device not having preferred, better, or best operation (e.g., higher or lower based on a selected indicator (e.g., temporal variation of the light intensity or light power and / or wavelength of an optical signal generated by the optoelectronic device)) is used (e.g., mainly or only for) thermally compensating the optoelectronic device having preferred, better, or best optical operation and generating an optical signal. For another example, the two or more optoelectronic devices may have different designs from each other, and the optoelectronic device having the desired operation may be used (e.g., packaged to provide an optical signal), while the optoelectronic device not having the desired operation may be used (e.g., mainly or only for) thermally compensating the optoelectronic device having the desired operation, thereby facilitating improved inventory management.

[0026] Figure 1A and Figure 1B An example device 10 according to some embodiments described herein is schematically illustrated. The device 10 includes at least a first optoelectronic device 100a and a second optoelectronic device 100b, which are thermally connected to each other (e.g., the first optoelectronic device 100a and the second optoelectronic device 100b are formed on the same chip 40 (e.g., substrate, wafer)). The device 10 further includes an optical output port 20, which is in optical communication with the first optoelectronic device 100a and is configured to output an optical signal or an optical signal generated by the first optoelectronic device 100a. In some embodiments, the optical output port can be configured to be in optical communication with an optical system 22 (e.g., via an optical coupler 24).

[0027] The device 10 further includes an electrical circuit system 30 in electrical communication with the first optoelectronic device 100a, the electrical circuit system 30 being configured to provide a first electrical signal 32a to the first optoelectronic device 100a, the first optoelectronic device 100a generating an optical signal 20a and heat in response to the first electrical signal 32a. The electrical circuit system 30 is further in electrical communication with the second optoelectronic device 100b, the electrical circuit system 30 being configured to provide a second electrical signal 32b to the second optoelectronic device 100b, the second optoelectronic device 100b generating heat in response to the second electrical signal 32b. The electrical circuit system 30 is configured to controllably adjust the first electrical signal 32a and the second electrical signal 32b to controllably adjust the temperature of the first optoelectronic device 100a.

[0028] In some embodiments, one or both of the first optoelectronic device 100a and the second optoelectronic device 100b include a tunable laser. For example, the tunable laser may include a waveguide having an active section and a passive section, including at least one grating-containing mirror (or optical reflector), at least one optical gain section, and at least one output face. In some examples, the output face may be partially reflective. For another example, the tunable laser may include two mirrors (optical reflectors), a phase section, and an optical gain section. For another example, the tunable laser may include a semiconductor optical amplifier (SOA) (for example, the first optoelectronic device 100a may include a distributed feedback laser with an SOA output, wherein wavelength tuning and power tuning may be thermally compensated by the second optoelectronic device 100b) and / or an electro-absorption modulator. In some other embodiments, one or both of the first optoelectronic device 100a and the second optoelectronic device 100b may include a tunable laser transmitter (for example, a tunable laser with an optical modulator).

[0029] Figure 2A Schematically illustrates a top view of an example device 10 according to some embodiments described herein. Figure 2A In the embodiment, the first optoelectronic device 100a and the second optoelectronic device 100b both include tunable lasers. Figure 2B In the embodiment, the first optoelectronic device 100a and the second optoelectronic device 100b both include a tunable laser emitter. Figure 2A and Figure 2BIn the embodiment, the two optoelectronic devices 100a, 100b are manufactured on a single chip 40. For example, the single chip 40 can have a minimum manufacturing size (e.g., due to manufacturing constraints, the chip footprint will not be smaller even if the chip 40 only includes a single optoelectronic device). In some embodiments, the two optoelectronic devices 100a, 100b (e.g., tunable lasers; tunable laser emitters) are included on a single chip 40 that would otherwise support a single optoelectronic device. Similarly, in some embodiments, the two optoelectronic devices 100a, 100b (e.g., tunable lasers; tunable laser emitters) are included on a single chip 40 that would otherwise support two or more optoelectronic devices.

[0030] like Figure 2A As shown schematically, in some embodiments, the first optoelectronic device 100a includes a tunable laser, which includes two first reflectors 101a, 104a, a first phase section 102a, a first gain section 103a, a first semiconductor optical amplifier 105a, and a first rear absorber 107a. The second optoelectronic device 100b can be manufactured in an otherwise unused portion of the chip 40, and the second optoelectronic device 100b can be similar to (e.g., identical to) the first optoelectronic device 100a. For example, the second optoelectronic device 100b can include components that are useful as the tunable laser, such as Figure 2A As shown, it may include two second reflectors 101b, 104b, a second phase section 102b, a second gain section 103b, a second semiconductor optical amplifier 105b and a second rear absorber 107b. Figure 2B As shown schematically, the first optoelectronic device 100a includes a tunable laser emitter, which includes two first reflectors 201a, 204a, a first phase segment 202a, a first gain segment 203a, a first semiconductor optical amplifier 205a, a first rear absorber 207a, and a first modulator 206a. The second optoelectronic device 100b can be manufactured in an otherwise unused portion of the chip 40, and the second optoelectronic device 100b can be similar to the first optoelectronic device 100a (e.g., having the same components of similar or identical or identical size and / or shape or other characteristics (e.g., electrical, material or spatial characteristics)). For example, the second optoelectronic device 100b may include components that are useful as the tunable laser emitter, such as Figure 2BAs shown, it may include two second reflectors 201b, 204b, a second phase segment 202b, a second gain segment 203b, a second semiconductor optical amplifier 205b, a second rear absorber 207b and a second modulator 206b. In some embodiments, the optoelectronic device may include a plurality of segments. In some such embodiments, each segment may include one or more components (e.g., reflectors, optical reflectors, phase shifters, optical amplifiers, optical absorbers, optical gain, etc.). In some cases, one or more temperature sensors may be included (e.g., monolithically integrated) in the optoelectronic device. In some such cases, one or more segments (perhaps most of the segments or even each segment) may include a temperature sensor, which may be used to monitor or measure the temperature of the segment. The temperature sensor may be, for example, a thermistor, a thermocouple or a semiconductor temperature sensor (e.g., a semiconductor junction).

[0031] Due to the aspect ratio of the first optoelectronic device 100a and the second optoelectronic device 100b and the limitations of the packaging and dicing system, the practical chip size is much larger than the size of the single first optoelectronic device 100a. Therefore, there may be a large amount of unused space on the chip 40, and it does not include any optoelectronic components and / or functional blocks included in the first optoelectronic device 100a.

[0032] In some embodiments, the two optoelectronic devices 100a, 100b are tested (e.g., before further packaging). If one of the two optoelectronic devices 100a, 100b is defective and cannot generate an optical signal, the other of the two optoelectronic devices 100a, 100b can be used to generate an optical signal, and further packaging includes configuring the available optoelectronic device to be electrically connected (e.g., electrically communicated with the circuit system 30) and optically connected (e.g., optically communicated with the optical system 22), while the unusable optoelectronic device is not configured to generate an optical signal. In some embodiments, the two optoelectronic devices 100a, 100b are tested (e.g., before further packaging), and an optoelectronic device with certain optical performance can be selected for optical connection, while the other optoelectronic device is ultimately not used to generate an optical signal.

[0033] In some embodiments, if the first optoelectronic device 100a is tested and meets all requirements, the testing of the second optoelectronic device 100b can be omitted (e.g., not required), and the first optoelectronic device 100a can be selected to be electrically connected to the circuit and optically communicate with the optical system, while the second optoelectronic device 100b, although it can work (e.g., can generate an optical signal), may not be configured to generate an optical signal. In some examples, the second optoelectronic device can generate an optical signal or an optical signal, but does not optically communicate with the optical system. In some examples, current can be provided only to a selected section of the second optoelectronic device (e.g., to generate heat and provide thermal compensation for the second optoelectronic device).

[0034] In certain embodiments, designing and manufacturing an optoelectronic device (e.g., a tunable laser, a tunable laser emitter) can advantageously provide two slightly different optoelectronic devices (e.g., different versions of the same optoelectronic device) that can be manufactured simultaneously. For example, during a testing phase in which two optoelectronic devices 100a, 100b are tested (e.g., by measuring the intensity, power, or wavelength of an optical signal generated by the optoelectronic device), one of the two optoelectronic devices 100a, 100b can be selected based on the test results and the desired application. One of the two optoelectronic devices with better optical performance can be selected to further configure it to be in optical communication with the optical system 22 (e.g., via an output optical fiber), while the other unselected optoelectronic device, although present on the chip 40 and in the device package, is not in optical communication with the optical system 22. In certain such embodiments, both the selected optoelectronic device and the unselected optoelectronic device are provided with electrical connections and input electrical signals, wherein the unselected optoelectronic device is used to provide temperature control for the selected optoelectronic device. In some examples, the optical performance can be measured based at least in part on the measured intensity or power of the optoelectronic device and / or the measured wavelength of the optoelectronic device. In some examples, the optical performance can be measured based at least in part on the temporal variation of the measured intensity or power of the optoelectronic device and / or the temporal variation of the measured wavelength of the optoelectronic device. In some cases, better performance refers to a measured performance that differs from another measured performance by a certain threshold.

[0035] In some embodiments, operation of an optoelectronic device (e.g., a first optoelectronic device 100a) in optical communication with an optical system 22 via an optical output port 20 includes adjusting (e.g., changing, tuning, modifying) at least one electrical signal 32a (e.g., current) provided to at least one component of the first optoelectronic device 100a. Such adjustment of at least one current or voltage provided to the optoelectronic device can be used, for example, to adjust the wavelength of an optical signal generated by the optoelectronic device or to adjust the intensity or power of light output by the optoelectronic device. In some cases, the adjustment of at least one current or voltage provided to the optoelectronic device can include modulating the current of the voltage at a certain modulation frequency. In some examples, the modulation frequency can be from 1 Hz to 100 Hz, from 100 Hz to 1 KHz, from 1 KHz to 100 KHz, from 100 KHz to 1 MHz, from 1 MHz to 100 MHz, from 100 MHz to 1 GHz, from 1 GHz to 10 GHz, or from 10 GHz to 50 GHz, or any range formed by any of these values.

[0036] In some cases, adjustments to at least one current or voltage provided to an optoelectronic device can be used to compensate for aging of active material in at least one component (e.g., gain section, phase section, one or more mirrors) over the lifetime of the optoelectronic device.

[0037] In some embodiments, at least one injection current may be adjusted to scan the first optoelectronic device 100a through a continuous wavelength within a predetermined wavelength range (eg, a vernier-tuned tunable laser). Figure 3 Schematically illustrates an example relative variation of the injection current provided to the front mirror 104a, the rear mirror 101a, and the phase section 102a of the first optoelectronic device 100a according to some embodiments described herein. Such ramps of the injection current provided to the front mirror 104a, the rear mirror 101a, and the phase section 102a may be complex, and in some embodiments, the current provided to the gain section 103a and / or the SOA 105a is also tuned to maintain power when adjusting the wavelength. Figure 3 The change in wavelength 404 of an example optoelectronic device (e.g., first optoelectronic device 100a) is shown as a result of adjusting the current 401 provided to the phase segment 102a for phase tuning, the current 402 provided to the front mirror 104a, and the current 403 provided to the rear mirror 101a. In the plot, the x-axis represents the time point, the leftmost y-axis represents the magnitude of the current 401 provided to the phase segment 102a for phase tuning, the current 402 provided to the front mirror 104a, and the current 403 provided to the rear mirror 101, and the rightmost y-axis represents the wavelength 404 of the first optoelectronic device 100a. Figure 3As shown, various currents supplied to an optoelectronic device (eg, a first optoelectronic device) may need to be adjusted in a complex manner in order to monotonically change the wavelength (eg, as a linearly decreasing function) while maintaining the optical output power constant or within a limited or predefined range.

[0038] These varying injection currents provided to various portions of the first optoelectronic device 100a may cause corresponding temperature changes over time. Such temperature changes may affect the operation of the first optoelectronic device 100a. In some examples, these varying temperatures may interfere with the wavelength adjustment process and make it difficult to control the wavelength of the first optoelectronic device. Advantageously, in certain embodiments, the second optoelectronic device 100b can be used to reduce (e.g., prevent, mitigate, minimize) these temperature-induced effects by providing thermal compensation. In some embodiments, one or more second injection currents may be provided to one or more segments or components of the second optoelectronic device such that heat exchange between the first optoelectronic device and the second optoelectronic device causes the temperature of one or more segments or components of the first optoelectronic device adjusted using the one or more first injection currents to be constant or nearly constant. For example, Figure 4 The temporal variation of heat dissipated or generated by a segment of a first optoelectronic device and a segment of a second optoelectronic device is schematically illustrated. In this example, according to certain embodiments described herein, heat from each segment can be generated by modulating a first injection current provided to a segment of the first optoelectronic device 100a (e.g., a laser whose optical output 20 is in optical communication with the optical system 22 and in electrical communication with the electrical circuit system 30) and modulating a second injection current provided to a segment of the second optoelectronic device 100b (e.g., a laser that is not in optical communication with the optical system 22 but is in electrical communication with the electrical circuit system 30). When the second optoelectronic device 100b is not in optical communication with the optical system 22 (e.g., the optical signal generated by the second optoelectronic device 100b is not used), at least one injection current provided to the second optoelectronic device 100b is used to compensate for the varying heat generated by the first optoelectronic device 100a (e.g., to maintain the temperature of the first optoelectronic device 100a within a predetermined range). As shown in FIG. Figure 4 As shown, the total heat generated and dissipated by the first photoelectric device 100a and the second photoelectric device 100b is controlled over time (e.g., substantially constant, adjusted between different values), so that the temperature of the first photoelectric device 100a is controlled over time (e.g., substantially constant, adjusted to a desired value, or adjusted to remain within a specific range).

[0039] In some embodiments, a substantially constant temperature can be maintained regardless of the drive current supplied to the first optoelectronic device 100a (e.g., a selected laser) (which may vary over time as described above). When one or more currents supplied to one or more segments of the first optoelectronic device 100a (e.g., currents supplied to one or more segments 101a-107a) are driven downward or upward from a nominal value to tune or control the first optoelectronic device 100a (e.g., laser wavelength, power, and / or side mode suppression ratio), one or more currents supplied to one or more corresponding segments of the second optoelectronic device 100b (e.g., currents supplied to one or more segments 101b-107b) are driven upward or downward by a similar amount (or an amount having a similar effect) in the opposite direction. Therefore, in some embodiments, by providing an opposite bias to a corresponding segment of the second optoelectronic device 100b adjacent to a segment of the first optoelectronic device 100a having a varying bias, the thermal load in any region of the chip 40 can be maintained substantially constant, such that the temperature of the first optoelectronic device 100a remains substantially constant (e.g., does not vary significantly with changes in device bias).

[0040] In some embodiments, the first optoelectronic device 100a and the second optoelectronic device 100b are paired (e.g., mirrored) with each other (and / or grouped together and / or close enough) on the chip 40 so that the waveguides of the two optoelectronic devices 100a, 100b are thermally connected to each other (e.g., separated by a distance in the range of 2 microns to 100 microns, with a spacing of less than 100 microns) to improve the uniformity of the constant heat load. In some embodiments, the injected currents in one or more pairs of local segments (e.g., segments 101a, 101b; segments 102a, 102b, etc.) are balanced to compensate for each other, thereby promoting or ensuring a constant heat load and enhanced temperature stability. In some embodiments, thermal compensation is provided by pairing only a subset (e.g., one or two) of the segments 101a-107a of the first optoelectronic device 100a with corresponding segments 101b-107b of the second optoelectronic device 100b, while in some other embodiments, thermal compensation is provided by pairing all of the segments 101a-107a of the first optoelectronic device 100a with corresponding segments 101b-107b of the second optoelectronic device 100b.

[0041] Figure 5A and Figure 5BTwo configurations of a chip 40 including two optoelectronic devices according to some embodiments described herein are schematically illustrated. The chip 40 (including, for example, a III-V semiconductor material) is mounted (e.g., soldered, epoxy-bonded; otherwise attached to) a carrier 50 (e.g., a substrate) for thermal and mechanical stability. Either of the two optoelectronic devices on the chip 40 can be selected for optical connection to serve as a first optoelectronic device 100a (e.g., in Figure 5A and Figure 5B ), and the other of the two optoelectronic devices can be selected to balance the heat load to serve as the second optoelectronic device 100b (e.g., in Figure 5A and Figure 5B In some embodiments, the selection is arbitrary and the first optoelectronic device 100a may be interchanged with the second optoelectronic device 100b. Figure 5A and Figure 5B The two configurations can be realized by using the same chip 40 and optoelectronic devices, but the two configurations have different connection configurations. Figure 5A In the device 10 of FIG. 1 , the leftmost optoelectronic device on the chip 40 is connected to the electrical port 302 of the active device (e.g., the first optoelectronic device 100a) by wire bonding or other means, and then optically connected to the optical system 22, while the rightmost optoelectronic device on the chip 40 is connected to the electrical port of the compensating thermal control (e.g., load balancing) device by wire bonding or other means, and then is not optically connected to the optical system 22. For another example, in Figure 5B In the device 10, the rightmost optoelectronic device (e.g., the first optoelectronic device 100a) on the chip 40 is connected to the electrical port 302 of the active device by wire bonding or other means, and then optically connected to the optical system 22, while the leftmost optoelectronic device on the chip 40 is connected to the electrical port of the compensating thermal control (e.g., load balancing) device by wire bonding or other means, and then is not optically connected to the optical system 22. Figure 5A and Figure 5B In the configuration, the roles of the two optoelectronic devices can be interchanged with each other.

[0042] In some embodiments, the electrical port 302 is configured such that Figure 5A and Figure 5B Any of the configurations can be easily implemented in the manufacturing process. In some embodiments, one of the optoelectronic devices may have poor optical performance or no optical function (e.g., cannot generate an optical signal), but may still have electrical function to generate heat for thermal compensation, and the use of Figure 5A and Figure 5BWhich configuration in the two optoelectronic devices can be based on determining which of the two optoelectronic devices has a preferred, better, best, etc. optical performance (e.g., such as higher or lower based on a selected indicator (such as the time variation of the intensity, power and / or wavelength of the optical signal generated by the optoelectronic device)). In some such embodiments, the yield of the chip is improved by thermal compensation. In some examples, the better optical performance refers to an optical performance that differs from another optical performance by a threshold amount.

[0043] Figure 6 is a flow chart of an example method 500 according to certain embodiments described herein.

[0044] In operation block 510, the method 500 includes connecting a first optoelectronic device 100a to an electrical circuit system 30. The electrical circuit system 30 is configured to provide a first electrical signal 32a to the first optoelectronic device 100a, the first electrical signal 32a being configured to control optoelectronic operation of the first optoelectronic device 100a (e.g., control the first optoelectronic device 100a to generate an optical signal 20a). In operation block 520, the method 500 further includes connecting a second optoelectronic device 100b to the electrical circuit system 30. The electrical circuit system 30 is further configured to provide a second electrical signal 32b to the second optoelectronic device 100b, the second electrical signal 32b being configured to control thermal compensation performed by the second optoelectronic device 100b. For example, the second electrical signal 32b can be configured to operate the second optoelectronic device 100b to generate a heat load that is added to the heat load from the first optoelectronic device 100a so that the temperature of the first optoelectronic device 100a is controlled (e.g., substantially constant, within a certain range) during operation of the first optoelectronic device 100a. In some embodiments, method 500 further includes connecting an optical output port 20 of the first optoelectronic device 100a to an optical input port of an optical system 22 (e.g., via an optical coupler 24). In some examples, the optical output port can be connected to an optical connector (e.g., a fiber optic connector) that is connected to optically couple to the optical system. In some such examples, the optical output port can be connected to an intermediate optical component (e.g., an optical adapter, a mode matching component, etc.). In some other examples, the optical output port can be a surface or a reflector that couples light from the optoelectronic device to free space. In some such examples, the light coupled out of the output port can be coupled to the optical system using an intermediate optical system (e.g., including one or more optical components, such as a lens, a polarizer, etc.).

[0045] In some embodiments, the method 500 includes selecting one of the two optoelectronic devices as the first optoelectronic device 100a. For example, in operation block 530, the optical performance of the two optoelectronic devices can be tested, and the optoelectronic device with better, best, etc. optical performance (e.g., such as higher or lower based on a selected indicator (such as the time variation of the intensity, power and / or wavelength of the optical signal generated by the optoelectronic device)) can be selected as the first optoelectronic device 100a. In some embodiments, testing the optoelectronic device can include, but is not limited to: measuring the intensity or power of light output by the optoelectronic device as a function of one or more drive currents provided to the optoelectronic device, measuring the wavelength of light output by the optoelectronic device as a function of one or more drive currents provided to the optoelectronic device, measuring the light modulation depth as a function of one or more modulation signals provided to the optoelectronic device, monitoring the intensity or power of light output by the optoelectronic device over a period of time, etc. In some such embodiments, the optical performance of the optoelectronic device can be determined at least in part based on the intensity or power measured over time, the measured light modulation depth, the measured light intensity or power, etc. In some examples, the test flow can include testing a first optical performance of the first optoelectronic device and a second optical performance of the second optoelectronic device. In some such examples, better, best, etc. optical performance may include an optical performance that differs from another optical performance by some threshold amount.

[0046] In some embodiments, the method 500 includes selecting the first optoelectronic device 100a in operation block 540 based on the design of the first optoelectronic device (e.g., the design that best fits the current manufacturing order, and / or a design that is different from other designs on the same wafer / substrate / chip). In some examples, the design differences may be related to the size and shape of certain features of the device. For example, the design differences between the first optoelectronic device 100a and the second optoelectronic device 100b may result in operational differences, making one device more useful for a particular application or operation of the device 10, while the other device is more useful for a different application or a different operation. The determination of the operational differences may be made after testing the first optoelectronic device 100a and the second optoelectronic device 100b, or may be based on design differences (without testing both devices), where it is known that the design differences will result in operational differences or the probability of operational differences. In some examples, the design differences may be the design of the manufactured device and may be associated with the manufacturing process. In some such examples, the design differences may be related to process variations from one wafer or substrate to another. A device deemed more useful for a particular operation of device 10 may be selected as the first optoelectronic device 100a of device 10, while another device deemed more useful for a different application may be selected as the second optoelectronic device 100b of device 10.

[0047] In some embodiments, once the first optoelectronic device is selected to generate an optical signal, the second optoelectronic device is selected to generate thermal compensation for the first optoelectronic device, and both optoelectronic devices are electrically connected to the electrical circuit system, and the electrical circuit system can be configured, for example, by measuring the temperature of one or more sections of the first optoelectronic device. In some such embodiments, the electrical circuit system can be adjusted to provide an electrical signal to the second optoelectronic device so as to maintain the measured temperature of one or more sections of the first optoelectronic device within a given temperature range when the first optoelectronic device is operating (e.g., generating an optical signal, generating an optical signal with different intensities or powers, generating an optical signal with different wavelengths, etc.). In some examples, the temperature of one or more sections of the first optoelectronic device can be measured using one or more temperature sensors (e.g., a thermistor, a thermocouple, a semiconductor temperature sensor, or an RTD, etc.). In some such examples, the temperature sensor can be integrated with the first optoelectronic device. In some other examples, the one or more temperature sensors can be temperature probes that are thermally connected to one or more sections of the first optoelectronic device.

[0048] In some embodiments, once a first optoelectronic device is selected to generate an optical signal, a second optoelectronic device is selected to generate thermal compensation for the first optoelectronic device, and both optoelectronic devices are electrically connected to an electrical circuit system, and the electrical circuit system can be configured, for example, by measuring the wavelength of light generated by the first optoelectronic device. In some such embodiments, the electrical circuit system can be adjusted to provide an electrical signal to the second optoelectronic device so that the measured wavelength can be tuned within a given wavelength range. In some examples, achieving tuning of the measured wavelength within a given wavelength range can include continuously tuning the wavelength within the wavelength range. In some examples, the wavelength of the optical signal generated by the first optoelectronic device can be measured using a spectrometer in optical communication with the first optoelectronic device (e.g., via an output port of the first optoelectronic device).

[0049] In some embodiments, the second optoelectronic device 100b may be replaced by a device that cannot generate light. For example, the device may include a optoelectronic device and a thermoelectric device (e.g., a resistive heater or a thermoelectric cooler) that is thermally connected to the optoelectronic device. In such an embodiment, the device may include one or more features described above with respect to the device 10. In some cases, similar to the second optoelectronic device 100b described above, the thermoelectric device may provide thermal compensation to adjust the temperature of at least one section of the optoelectronic device; however, the thermoelectric device may not generate light. In some examples, the thermoelectric device may include one or more sections whose temperature can be independently controlled. In some examples, a single section of the thermoelectric device may be configured to provide thermal compensation to a corresponding section of the first optoelectronic device 100a. An electronic circuit or controller (e.g., an electrical circuit system 30) may provide a current (or voltage) to one or more sections of the thermoelectric device to controllably adjust the temperature of one or more sections of the first optoelectronic device 100a.

[0050] Thermal compensation devices may include, for example, thermoelectric devices, such as resistive heaters, which include, for example, doped semiconductors (such as semiconductor junctions), undoped or intrinsic semiconductors, metals (such as low conductivity metals (e.g., tungsten)). The resistive heater may include an input port for current inflow and an output port for current outflow and / or for applying voltage. Such components may be manufactured in or on a semiconductor substrate. Thermal compensation devices may also include other types of thermoelectric devices, such as thermoelectric coolers. In some cases, the resistive heater may include a film resistor (e.g., a thin film or thick film resistor). In some examples, the resistive heater may include a nickel-chromium alloy (NiCr) or other alloys. In some cases, the compensation device may include a semiconductor or a semiconductor junction. Controlling Thermal Compensation Devices

[0051] Fig. 7A Schematically illustrates an optoelectronic device (eg, Figure 7B 1 and 10. The heat dissipation rate (heat power dissipated) of a photovoltaic device 100a or 100b) or a thermoelectric device in the apparatus 10 shown in FIG. 1 is a function of the current (I) supplied to the photovoltaic device. Figure 7B The apparatus 10 and the optoelectronic device 100a or 100b may include the above Figure 1A , Figure 1B , Figure 2A and Figure 2B One of the features described above with respect to the device 10 and the optoelectronic device 100a or 100b. Figure 1A and Figure 1B As stated and Figure 7BAs shown, in some cases, the apparatus 10 may include a first optoelectronic device 100a optically connected to the output port 20 and a second optoelectronic device 100b thermally connected to the first optoelectronic device 100a and configured to control (e.g., stabilize, reduce fluctuations, etc.) the temperature of one or more sections of the first optoelectronic device 100a. Figure 1A and Figure 1B In some cases, an electrical signal 32a may be provided to the first optoelectronic device 100a to change or control the characteristics of the light generated by the first optoelectronic device 100a. For example, the electrical signal 32a may include a first current 703 applied to one or more segments of the first optoelectronic device 100a, and the first current 703 may be modulated to produce a modulated output light beam (e.g., amplitude modulation). In some other cases, the first current 703 applied to one or more segments of the first optoelectronic device 100a may be modulated or changed to modulate, change, or scan the wavelength of the light output by the first optoelectronic device 100a. In some cases, changing or modulating the first current 703 provided to a segment of the first optoelectronic device 100a may cause a temperature change in the segment, and may cause a temperature change in other segments of the first optoelectronic device 100a. In order to reduce or potentially eliminate such temperature changes that may affect the operation of the first optoelectronic device 100a, the second electrical signal 32b provided to the first optoelectronic device 100a may be adjusted. In some cases, the second electrical signal 32b may include a second current 705 provided to one or more segments of the second optoelectronic device 100b. The second current 705 can be adjusted or modulated to reduce temperature changes in one or more sections of the first optoelectronic 100a by providing thermal compensation. For example, when the first current 703 provided to the first section of the first optoelectronic device 100a increases, the second current provided to the second section of the second optoelectronic device 100b can be reduced to reduce the temperature of the second section relative to the first section so that at least a portion of the heat generated by the first section flows to the second section. Similarly, when the first current 703 provided to the first section of the first optoelectronic device 100a decreases, the second current 705 provided to the second section of the second optoelectronic device 100b can be increased to increase the temperature of the second section relative to the first section and cause heat to flow from the second section to the first section. Therefore, when the first current 703 is modulated or changed, the second current 705 can stabilize the temperature of the first section by controlling the rate and direction of thermal energy exchange between the first section and the second section.

[0052] like Fig. 7A As shown, the heat dissipation rate (H) of a photovoltaic device (or thermoelectric device) can be a nonlinear function of the current applied to the device (e.g., applied to a certain section of the photovoltaic device). In some examples, the heat dissipation rate can be expressed as I 2×R, where R can be the resistance or effective resistance of the optoelectronic device, or the resistance of the section in the optoelectronic device where current is provided. In some cases, the current provided to the optoelectronic device can include a time-varying current configured to modulate the optical power generated by a functional optoelectronic device configured to generate light (e.g., the first optoelectronic device 100a), or a current provided to a thermal compensation electronic device (e.g., the second optoelectronic device 100b) to offset or balance the heat generated by the functional optoelectronic device and stabilize its temperature. In some examples, the time-varying current can be between I0 - |ΔI1| and I0 + |ΔI2|, where I0 is the bias current (also referred to as the bias point), and ΔI1 and ΔI2 are the positive and negative current change amplitudes relative to the bias current. In some cases, |ΔI1| can be equal to or substantially equal to |ΔI2|. Due to the non-linearity of the heat dissipation process, for a given bias current I0, the change in the heat dissipation rate may depend on whether the current is increasing or decreasing. Given the non-linear dependence of heat dissipation on the current provided to the device or a section of the device (as Fig. 7A shown), to stabilize the temperature of the first section, the amplitude of the second current 705 provided to the second optoelectronic device can be adjusted not only based on the change amplitude of the first current 703, but also based on the first bias current (I 01 ) around which the first current is changed or modulated.

[0053] Fig. 7A It is shown that when |ΔI1| = |ΔI2| = ΔI, the increase in the heat generation rate (ΔH2) in response to the current changing from I0 to I0 + ΔI can be different from (e.g., greater than) the decrease in the heat generation rate (ΔH1) in response to the current changing from I0 to I0 - ΔI. The difference between ΔH1 and ΔH2 is caused by the difference between the slope (or average slope) of the first part 702a of curve 702 corresponding to I < I0 and / or ΔI1 < 0 and the slope of the second part 702b of curve 702 corresponding to I > I0 and / or ΔI2 > 0. Therefore, in some cases, the current provided to the thermal compensation device can be modulated or adjusted asymmetrically with respect to the bias current so as to increase or decrease the heat generated by the thermal compensation device by the same amount or amplitude. More generally, the signal provided to the thermal compensation device can be adjusted or modulated asymmetrically with respect to the bias point and according to the heat generation characteristics and thus the current-voltage characteristics of the thermal compensation device. In some cases, the measured current-voltage characteristics of the thermal compensation device can be used to determine the resistance of the thermal compensation device (e.g., the effective resistance related to current or voltage), and this resistance can be used to determine the dependence of the heat generation rate (H) on the current (or voltage) provided to the thermal compensation device. Next, the bias point (e.g., the bias current) is selected, and the change of the current provided to the thermal compensation device with respect to the bias point (e.g., the asymmetric change) can be determined based on the determined relationship between heat generation and current.

[0054] refer to Figure 7B In some examples, the first optoelectronic device 100a and the second optoelectronic device 100b may be substantially identical devices having identical or substantially similar dimensions and / or current-voltage (IV) characteristics. In some cases, for example, the size difference may not exceed 20%, 15%, 10%, 5%, 1%, 0.5%, 0.1%, or any range formed by any of these values ​​or values ​​that may be larger or smaller. In some cases, the first optoelectronic device 100a and the second optoelectronic device 100b may receive identical or substantially identical bias currents (I0) during operation of the device 10. In some examples, the first optoelectronic device 100a may include a first optical cavity formed between a first front reflector and a first rear reflector, and the second optoelectronic device 100b may include a second optical cavity formed between a second front reflector and a second rear reflector, wherein the size of the first optical cavity is. In some cases, the first front reflector and the first back reflector are exactly the same size as the second optical cavity, the second front reflector, and the second back reflector, or the size difference may not exceed 20%, 15%, 10%, 5%, 1%, 0.5%, 0.1%, or any range formed by any of these values ​​or values ​​that may be larger or smaller. The optical cavity may include a first gain segment and / or a first phase segment, and the second optical cavity may include a second gain segment and / or a second phase segment. In some cases, the size (e.g., thickness, length, width, or any combination thereof) of the first phase segment and the first gain segment may be exactly the same size as the second phase segment and the second gain segment, or the size difference may not exceed 20%, 15%, 10%, 5%, 1%, 0.5%, 0.1%, or any range formed by any of these values ​​or values ​​that may be larger or smaller.

[0055] In these examples, the temperature changes produced by modulating the first current 703 provided to the first optoelectronic device 100a around I0 may not be effectively compensated by providing a second current 705 having an opposite sign but otherwise equal to the first current 703 to the second optoelectronic device 100b. Given the nonlinearity of the heating rate with respect to current, providing the second optoelectronic device 100b with a second current 705 that is simply a phase-shifted copy of the first current (e.g., phase-shifted by 180 degrees) may not result in a temperature change. Figure 4 The temporal variation of heat dissipation is shown, where the combined average heat from the two segments remains constant. Therefore, to balance the heat generated by the first optoelectronic device 100a, the second current 705 provided to the second optoelectronic device 100b can be adjusted to take into account the nonlinearity of the heat generation rate with respect to the second current 705.

[0056] In some embodiments, the electrical circuit system 30 that provides the first electrical signal 32a and the second electrical signal 32b to the first optoelectronic device 100a and the second optoelectronic device 100b can be configured to adjust the second electrical signal 32b based at least in part on the first electrical signal 32a. In some examples, the electrical circuit system 30 can adjust the property or characteristic of the second current 705 based on the property or characteristic of the first current 703. The property or characteristic can include a rate of change, a peak value, a phase, an amplitude, etc. For example, the amplitude of the second current 705 can change before the first current 703 changes, and its rate of change is greater than the rate of change of the first current 703 by a specified amount, wherein the time difference between the corresponding changes is also specified. In some cases, the electrical circuit system 30 can adjust the second current 705 based on the first electrical signal 32a (e.g., current 703, voltage, etc.), while taking into account the nonlinearity of the heating rate of the second optoelectronic device 100b relative to the second current 705. In some embodiments, the first optoelectronic device 100a and the second optoelectronic device 100b can have different designs, sizes, structural characteristics and / or material properties. In some other embodiments, the second optoelectronic device 100b may be replaced by a thermoelectric device that cannot generate light. In these embodiments, the bias or average value of the second current 705 may be different from the bias or average value of the first current 703, but the second current 705 can still be adjusted at least in part based on the nonlinear dependence of the heat generation rate of the thermoelectric device on the second current 705.

[0057] In various embodiments, the second electrical signal 32b (e.g., the second current 705) can be configured to operate the second optoelectronic device 100b (or a thermoelectric device in thermal communication with the first optoelectronic device 100a) so that the temperature or average temperature of the first optoelectronic device 100a or at least one section of the first optoelectronic device 100a does not vary by more than 1%, 3%, 5%, or 10%. In some examples, when the first electrical signal 32a is periodic, the average temperature can be determined over one or more cycles of the first electrical signal 32a. In some other examples, the average temperature can be determined over a period of time in which the first electrical signal 32a is adjusted to control, change, modulate, or scan the characteristics of light generated by the first optoelectronic device 100a.

[0058] In some examples, the current-voltage (IV) characteristics of the first optoelectronic device 100a and the second optoelectronic device 100b (or thermoelectric devices for thermal compensation) may be measured individually to fully characterize their heating rates as a function of received current.

[0059] In some cases, a measured IV curve of a photovoltaic device (or thermoelectric device) can be used to determine the resistance (R) of the photovoltaic device (or thermoelectric device) as a function of the voltage (or current) applied to the device. For example, the voltage (V) applied to the photovoltaic device (or thermoelectric device) can be varied within a given range, and the current (I) flowing through the photovoltaic device (or thermoelectric device) can be measured at different voltage values ​​to calculate R=V / I for different values ​​or V and corresponding I. In some cases, the resistive heating rate or thermal power generated by the photovoltaic device can be estimated as I based on the variation of R measured as a function of I. 2 × R. In some cases, when the device includes a pn junction, the resistive heating rate or heat power generated by the optoelectronic device can be estimated as I based on the change in R measured as a function of I 2 ×R+V d ×I, where V d is the diode voltage of the pn junction.

[0060] Once the R and / or heating rate of the light emitting optoelectronic device and / or the corresponding thermally compensated optoelectronic (or thermoelectric) device are fully characterized, a second current 705 provided to the thermally compensated optoelectronic device 100b (or electronic device) can be determined based on the first current 703 provided to the first optoelectronic device 100a and the measured heating characteristics (e.g., R) of both devices. In some cases, the electronic circuit or control system (e.g., electrical circuit system 30) for adjusting the current provided to the optoelectronic devices of the device 10 can be calibrated and / or programmed to determine and provide the second current 705 to the second (thermally compensated) optoelectronic device 100b based on the current provided to the first optoelectronic device and the resistance or heating characteristics of the first optoelectronic device 100a and / or the second optoelectronic device 100b.

[0061] In some examples, current-voltage (IV) characteristics of individual sections of the first optoelectronic device 100a and / or the second optoelectronic device 100b (or thermoelectric devices for thermal compensation) may be measured, respectively, to fully characterize the heating characteristics (e.g., heating rate or R) that vary with the current supplied to these sections. In some cases, the individual sections of the optoelectronic device (e.g., the first optoelectronic device 100a) may include a phase section, an optical amplifier section, an optical gain section, a reflector, an optical absorber, etc.

[0062] In some cases, the measured heating and / or resistance characteristics of the first optoelectronic device 100a and the second optoelectronic device 100b can be stored in a non-volatile memory of a control system (e.g., the electrical circuit system 30) and used by a control algorithm (e.g., a current control algorithm) executed by the control system.

[0063] In some examples, an electrical circuit system (e.g., circuit system 30) that provides current 105 to a thermal compensation device (e.g., second optoelectronic device 100b) can be configured to asymmetrically adjust a signal property of an electrical signal provided to the thermal compensation device based at least in part on a current-voltage characteristic of the thermal compensation device. In some examples, the electrical circuit system can asymmetrically adjust a signal property of the second electrical signal relative to a bias point in a manner consistent with a nonlinearity in resistance or current of the thermal compensation device, or a nonlinearity in a heating rate of the thermal compensation device. Time current control for fast stable thermal compensation

[0064] The heat transfer between the second optoelectronic device 100b (or the electronic thermal compensation device) is not instantaneous; therefore, there may be a delay between changing the second current 705 provided to the second optoelectronic device 100b and its effect on the temperature of one or more segments of the first optoelectronic device 100a. For example, when the first electrical signal 32a (e.g., the first current 703) provided to one or more segments of the first optoelectronic device 100a changes from time t s When it starts to increase (or decrease), at the same time t s The second current 705 supplied to the second optoelectronic device 100b (eg, supplied to the corresponding section of the second optoelectronic device 100b) is reduced (or increased) for at least the delay (or thermal response) period t s -t r The temperature of the corresponding section of the first optoelectronic device 100a may not be kept substantially constant or within a desired range, where t r is the time at which the change in the second current 705 produces a thermal effect on the first optoelectronic device 100a. In some cases, the temperature change of one or more sections of the optoelectronic device 100a may be nonlinear with respect to the change in the second current 705. In some cases, the change in the heat transfer rate between the optoelectronic device 100a and the optoelectronic device 100b (or another thermal compensation device) may be nonlinear with respect to the change in the second current 705.

[0065] In some embodiments, the electrical circuit system 30 can control the first current 703 (or one of the first signals 32a) and the second current 705 so that the time (t2) of changing the second current 705 lags or leads the time t1 of the change or discontinuity of the first current 703. In some cases, the change or discontinuity of the first current 703 may be associated with a rate of change greater than a threshold. In various embodiments, |t1-t2| can be 10 to 20 nanoseconds, 20 to 100 nanoseconds, 100 nanoseconds to 1 microsecond, 1 to 100 microseconds, 100 microseconds to 1 millisecond, 1 to 10 milliseconds, or any range formed by these values ​​or larger or smaller values. In some cases, |t1-t2| can be determined based on the geometry of the first optoelectronic device 100a and the second optoelectronic device 100b, the rate of change of the first current 703, and / or the period (or frequency) of the first current 703, or any combination of these parameters.

[0066] Additionally or alternatively, in some embodiments, the electrical circuit system 30 can control the second current 705 so that the initial slope (rate of change) of the second current 705 is large enough to reduce or maintain the delay between the change in the second current 705 and the resulting change in temperature of at least one section of the first optoelectronic device 100a below a threshold delay value. In some cases, the threshold delay value can be 10 to 20 nanoseconds, 20 to 100 nanoseconds, 100 nanoseconds to 1 microsecond, 1 to 100 microseconds, 100 microseconds to 1 millisecond, 1 to 10 milliseconds, or any range formed by these values ​​or larger or smaller values. In some cases, the threshold delay can be determined based on the geometry of the first optoelectronic device 100a and the second optoelectronic device 100b, the rate of change of the first current 703, or the period (or frequency) of the first current 703, or any combination of these parameters.

[0067] In some cases, the second current 705 provided to the second optoelectronic device 100b may be pre-emphasized or post-emphasized relative to the change in the first electrical signal 32a to increase the heat transfer rate between the first optoelectronic device 100a and the second optoelectronic device 100b, thereby increasing the speed at which the first optoelectronic device 100a and the second optoelectronic device 100b reach thermal equilibrium or the temperature of the first optoelectronic device 100b reaches stability. In various embodiments, the pre-emphasized or post-emphasized current may include causing the timing, amplitude, time behavior, or any combination of these of the second current 705 to deviate from the timing, amplitude, or time behavior of the first current 703. In some cases, the pre-emphasized or post-emphasized current may include causing the timing, amplitude, time behavior, or any combination of these of the second current 705 to deviate from a monotonic (e.g., linear) change from an initial value to a final value.

[0068] In some cases, the change in stable temperature may not exceed the temperature uncertainty limit. In some cases, the temperature uncertainty limit may be an upper limit of the temperature fluctuation (or change) of a light-emitting optoelectronic device (e.g., the first optoelectronic device 100a) or a certain section of the light-emitting optoelectronic device. In various embodiments, the temperature uncertainty limit may be from 0.0001 to 0.0005 degrees, from 0.0005 to 0.001 degrees, from 0.001 to 0.005 degrees, from 0.005 to 0.01 degrees, from 0.01 to 0.05 degrees, from 0.05 to 0.1 degrees, or any range formed by these values ​​or larger or smaller values. The temperature uncertainty limit of the optoelectronic device or device may include a specified value or range determined based on the application of the optoelectronic device or device. For example, when the light generated by the optoelectronic device is provided to another optical system or device, the temperature uncertainty limit of the optoelectronic device can be determined based on the sensitivity of the other optical device or optical system to the wavelength and / or power of the light received from the optoelectronic device. In some cases, the temperature uncertainty limit can be determined based on the wavelength uncertainty limit specified for the application. In some examples, the specified wavelength uncertainty limit can be less than 10 of the wavelength (eg, center wavelength) of the light generated by the optoelectronic device. -7 , less than 10 -6 , less than 10 -4 , or less than 1%.

[0069] In some cases, the signal provided to one or more sections of the second optoelectronic device 100b (thermal compensation device) can be adjusted so that the temperature of one or more sections of the first optoelectronic device 100a is maintained within a range of ±0.0001, ±0.001%, ±0.01%, ±0.1%, ±1%, ±2%, ±3%, ±4%, ±5%, ±6%, ±7%, ±8%, ±10% or ±20% of a specified temperature, or any range between any of these values.

[0070] In some cases, the signal provided to one or more sections of the second optoelectronic device 100b (thermal compensation device) can be adjusted so that the temperature of one or more sections of the first optoelectronic device 100a is maintained within ±10°C of a specified temperature. -6 ℃, ±10 -5 ℃, ±±10 -4 ℃, ±10 -3 ℃, ±10 -2 ℃ or ±10 -1 ℃, or any range between any of these values.

[0071] In some cases, the signal provided to one or more sections of the second optoelectronic device 100b (thermal compensation device) can be adjusted to stabilize the wavelength (e.g., center wavelength) of the light generated by the first optoelectronic device near a target wavelength. In some cases, the target wavelength can be time-dependent and change over time according to a predefined time curve. In some cases, stabilizing or tuning the wavelength (e.g., center wavelength) of the light generated by the first optoelectronic device includes maintaining the wavelength within ±0.00001%, within ±0.0001%, within ±0.001%, within ±0.01%, within ±0.1%, within ±1%, within ±2%, within ±3%, within ±4%, within ±5%, or any range between any of these values ​​of the target wavelength. In some cases, stabilizing or tuning the wavelength (e.g., center wavelength) of the light generated by the first optoelectronic device includes maintaining the wavelength within ±10% of the target wavelength. -2 Within picometer, ±10 -1 In some cases, the target wavelength may include wavelengths around 850 nm, 980 nm, 1300 nm, or 1550 nm.

[0072] Continue to refer Figure 7B In some cases, when the second current 705 is changed in response to a change in the first current 703, the amplitude of the pre-emphasized (or post-emphasized) second current 705 may include a local maximum or a local minimum after the second current 705 is changed. The local maximum may include an overshoot, and the local minimum may include an undershoot relative to the first current 703. For example, the pre-emphasized (or post-emphasized) second current 705 may include an increase or decrease from an initial value, such as a gradual increase or decrease or a monotonically increase or decrease or growth (e.g., linear growth), and then reach a local maximum and decay to a subsequent value. The pre-emphasized second current 705 may include a local maximum (or local minimum) before the change in the first current 703, and the post-emphasized second current 705 may include a local maximum (or local minimum) after the change in the first current 703 (or the first signal 32a).

[0073] In various embodiments, the delay between the local maximum (or local minimum) of the second current 705 and the local maximum (or local minimum) of the first current 703 can be 1 to 10 nanoseconds, 10 to 100 nanoseconds, 100 nanoseconds to 1 microsecond, 1 to 10 microseconds, 10 to 1 millisecond, or any range formed by these values ​​or larger or smaller values.

[0074] FIG. 8A to FIG. 8BSchematically illustrates two example time variations of a current (I2) 802, 804 supplied to a thermal compensation device (e.g., the second optoelectronic device 100b), and the resulting variation in the rate of heat transfer (H 2 ) from the thermal compensation device to the light emitting optoelectronic device (e.g., the first optoelectronic device 100a). 21 ) 806, 808. In some cases, current 804 can be a modified current relative to current 802 and result in faster thermal control of the light emitting optoelectronic device. Fig. 8A and Figure 8B The following diagrams show: (A) increasing the current to provide heat to the light-emitting optoelectronic device; and (B) decreasing the current to absorb the heat from the light-emitting optoelectronic device. The solid and dashed lines represent the changes in heat transfer rate and the corresponding current corresponding to faster and delayed thermal control, respectively.

[0075] exist Fig. 8A In the example shown, it is assumed that the temperature of at least one section of the optoelectronic device (e.g., the first optoelectronic device 100a) is decreasing, so that heat energy flows from the thermal compensation device to the optoelectronic device. Therefore, the current I2 (e.g., the second current 705) decreases from the lower initial value I L Increase to a higher final value I H , for example, establishing or increasing a heat flow (H ) from a thermal compensation device (eg, the second optoelectronic device 110 b ) to a corresponding section of the optoelectronic device. 21 ). Therefore, the rate of heat energy transfer from the thermal compensation device to the optoelectronic device (H 21 ) from the lower value H corresponding to the initial thermal equilibrium L increases to a higher value H corresponding to a new thermal equilibrium between the thermal compensation device and the optoelectronic device H In the example shown, the modified current I2 802 (solid line) is increased from the lower value I L Transition to higher values ​​I H When including overshoot, the current I2 804 increases from the lower value I L monotonically increases (e.g., linearly increases) to a higher value I H In some examples, the peak value (I p ) and lower value I L The difference between the high value I H With lower value I L The difference between the values ​​is a multiple of 1.2 to 1.5, 1.5 to 2, 2 to 4, 4 to 6, 6 to 8, 8 to 10, 10 to 50, or any range of these values ​​or values ​​greater or less. The heat energy transfer (H) generated by the modified current I2 802 21 )806In a period of time (t c -t e1 ) from a lower value H LChange to a higher value H H , which is shorter than the heat energy transfer (H 21 )808 from the lower value H L Change to a higher value H H The time period (t e2 -t c ).

[0076] As shown in the following figure, the modified current I2 802 (solid line) can stabilize the heat energy transfer (H) faster than the current I2 804 (dashed line). 21 )806, thereby stabilizing the temperature of the optoelectronic device. In some cases, the overshoot of the second current may result in an overall faster temperature compensation without causing an overshoot of the first current.

[0077] exist Figure 8B In the example shown, it is assumed that the temperature of at least one section of the optoelectronic device (e.g., the first optoelectronic device 100a) is increasing, so thermal energy must flow from the optoelectronic device to the thermal compensation device. Therefore, the current I2 (e.g., the second current 705) decreases from the higher value I H Reduce to a lower value I L , in order to reduce the heat flow from the thermal compensation device to the corresponding section of the optoelectronic device (H 21 ). Therefore, the rate of heat energy transfer from the thermal compensation device to the optoelectronic device (H 21 ) from an initial higher value H corresponding to the initial thermal equilibrium H to a final lower value H corresponding to a new thermal equilibrium between the thermal compensation device and the optoelectronic device L . Including higher values ​​I H With lower value I L The undershoot current I2 810 (solid line) can be compared with the higher value I H monotonically decreases (e.g., linearly decreases) to a lower value I L The modified current I2 812 (dashed line) stabilizes the temperature of the optoelectronic device more quickly. In some examples, the minimum value (I d ) and lower value I L The absolute value of the difference between the two can be compared to the high value I H With lower value I L The difference between them is a multiple of 1.2 to 1.5, 1.5 to 2, 2 to 4, 4 to 6, 6 to 8, 8 to 10, 10 to 50, or a multiple of any range formed by these values ​​or larger or smaller values.

[0078] Fig. 8A and Figure 8B It shows that although the two currents 802, 804 (or 812 and 810) are substantially at the same time (t c) changes, the overshoot (or undershoot) of current 802 (or 810) causes the heat transfer rate to reach the final value H faster. H (or H L ), thereby stabilizing the temperature of the optoelectronic device in a shorter period of time. In some examples, the time t of the current 802 (or 810) and the current 804 (or 802) to establish a new thermal equilibrium is respectively e2 With t e1 The delay between the two may depend on the local maximum value I of the current 802 (or 810). p (or local minimum I d ) and the slope of current 804 (812) and current 802 (810) during the growth or decay period. In some cases, the time t to initiate the change to I2 705 can be determined based on the time when the change to the first current 703 is made. c For example, t c It may be before the time when the first current 703 is changed.

[0079] Figure 8C An example time variation of a current I1 820 (e.g., current 703) provided to a segment of a first optoelectronic device 100a and two example time variations of a modified current (I2) 823, 824 (e.g., current 705) provided to a segment of a second optoelectronic device 100b (e.g., a thermal compensation device) to stabilize the temperature of the first optoelectronic device 100a are shown. In some cases, the modified current (I2) 823, 824 can be a pre-emphasis current. In the example shown, the current I1 820 includes a periodic triangular wave having identical (or nearly identical) positive and negative slopes and having a constant relative to the average current I 1Ahas a symmetrical amplitude variation. In some cases, a current I2 822 (dashed line) that is 180 degrees phase-shifted relative to the current I1 820 but has a time variation that is substantially identical to the time variation of the current I1 820 may be provided to the second optoelectronic device 100b to stabilize the temperature of the first optoelectronic device 100a. In some examples, when the first optoelectronic device and the second optoelectronic device are substantially identical devices, the currents I1 820 and I2 822 may have substantially equal amplitudes. In some cases, the current I2 822 may not be able to compensate for the temperature variation of the first optoelectronic device 100a at a sufficient speed and / or efficiency and result in a residual temperature variation of the first optoelectronic device 100a. In some embodiments, providing a modified current (e.g., a pre-emphasized current) I2 may increase the thermal compensation speed and efficiency, thereby reducing the residual temperature variation of the first optoelectronic device 100a. In some examples, the modified current I2 823 can be a pre-emphasis current I2 823 (dashed line) whose time profile is substantially similar to the time profile of current I2 822, but the local maximum of pre-emphasis current 823 is delayed (Δt ) relative to the corresponding local maximum of current I2 822. d ). In some such examples, the magnitude of pre-emphasis current I2 823 can be greater than current I2 822. In some examples, the modified current I2 can have a different time profile compared to current I2 822. For example, with reference to current I2 822, the modified current I2 can be pre-emphasis current I2 824 (solid line) having an asymmetric (e.g., sawtooth) time profile that is delayed relative to current I2 822.

[0080] In various implementations, the delay (Δt ) between the peak of pre-emphasis current I2 823 (or 824) and the corresponding valley (local minimum) and / or steady-state start of current I1 820 is d ) can be 1 to 10 nanoseconds, 10 to 100 nanoseconds, 100 nanoseconds to 1 microsecond, 1 to 10 microseconds, 10 to 1 millisecond, or any range formed by these values ​​or larger or smaller values.

[0081] In some cases, the absolute value of the local maximum value of the electrical signal (e.g., modified current I2 823, 824 or current 705) provided to a segment of the thermal compensation device (e.g., the second photoelectric device 100b) can be greater than the absolute value of the local minimum value of the electrical signal (e.g., current I1 820 or current 703) provided to the light-emitting photoelectric device (e.g., the first photoelectric device 100a).

[0082] In some cases, the absolute value of the local minimum value of the electrical signal (e.g., modified current I2 823, 824 or current 705) provided to a segment of the thermal compensation device (e.g., the second photoelectric device 100b) can be greater than the absolute value of the local maximum value of the electrical signal (e.g., current I1 820 or current 703) provided to the light-emitting photoelectric device (e.g., the first photoelectric device 100a).

[0083] In some cases, during the transition period when the second current 705 provided to the thermal compensation device changes from a lower value to a higher value (from a higher value to a lower value), the second current 705 may be distorted relative to the first current 703 to increase the speed at which the first optoelectronic device 100a and the second optoelectronic device 100b reach thermal equilibrium or the temperature of the first optoelectronic device 100a reaches stability. The distortion may include any linear, nonlinear, discontinuous, step-by-step behavior that is different from a continuous monotonic change from an initial value to a final value. In some examples, the distorted second current 705 can increase this speed by increasing the heat transfer rate between the first optoelectronic device 100a and the second optoelectronic device 100b.

[0084] In some cases, the transition period may overlap, precede, or follow a period during which the first electrical signal 32a (eg, current 703) changes. The distorted current may include one or more inflection points, one or more local maxima, one or more local minima, or other features.

[0085] The characteristics of the pre-emphasis or post-emphasis current or signal provided to the thermal compensation device can be determined based on a response time that quantifies the delay between a change in the second current 705 provided to the thermal compensation device (e.g., the second optoelectronic device 100b) and a resulting change in the temperature of the optoelectronic device (e.g., the first optoelectronic device 100a).

[0086] The response time may depend on the structural and geometrical properties of the optoelectronic device and the thermal compensation device, the substrate (or chip) on which the devices are fabricated, the distance between the two devices, etc. For example, the response time may depend on the thickness of the substrate, the position of the p-type layer (p-side) of one or both devices relative to the substrate (e.g., mounted p-side down or p-side up), the lateral distance between the two devices, the electrical and thermal impedances of the devices, the thermal mass of the electrical contacts used to provide signals (e.g., current) to the devices, etc.

[0087] In some embodiments, a calibration process can be used to determine the characteristics of a signal provided to a thermal compensation device and the timing of changes to the signal provided to an optoelectronic device thermally controlled by the thermal compensation device. In some cases, the electrical circuit system (e.g., the electrical circuit system 30) that provides the control signal to the compensation device can be calibrated, adjusted, programmed, and / or configured according to the determined characteristics. In some embodiments, circuit parameters of the electrical circuit system can be adjusted according to the determined characteristics. In various embodiments, the circuit parameters can include parameters of circuit components (e.g., the resistance of a variable resistor, the gain of an amplifier, the voltage provided to a component, the value of a logic gate, the state of a switch, the attenuation of a variable attenuator, etc.), parameters stored in a non-transitory memory of the electrical circuit system, or parameters in an algorithm used by the electrical circuit system to control one or more signals provided to the thermal compensation device.

[0088] In some cases, the calibration process may include changing a first signal provided to the optoelectronic device and adjusting a second signal provided to the thermal compensation device while monitoring the wavelength of light generated by the optoelectronic device. In some cases, the wavelength of the optoelectronic device may be monitored using a wavelength meter, an oscilloscope, a system including an etalon, a grating, a Mach-Zehnder interferometer or other frequency / wavelength selective device and one or more photodetectors (e.g., photodiodes) configured to generate a detection signal upon receiving optical power. In some cases, the wavelength selective optical device may include an optical interferometer or an optical filter.

[0089] In some cases, adjusting the second signal may include pre-emphasizing, post-emphasizing, or otherwise distorting the second signal during the transition period. Additionally, adjusting the second signal may include adjusting the time alignment between the transition period and the period during which the first signal is changed. Changing the first signal may include modulating the amplitude of a current or voltage provided to at least one segment of the optoelectronic device. In some examples, the second signal may be adjusted to maintain the wavelength of light generated by the optoelectronic device substantially constant or within a wavelength uncertainty limit centered about a target wavelength. In some cases, the wavelength uncertainty limit may be less than 10% of the wavelength (e.g., center wavelength) of light generated by the optoelectronic device (e.g., first optoelectronic device 100a). -7 , less than 10 -6 , less than 10 -5 , less than 10 -4 , less than 10 -3 , less than 1%, less than 5%, or less than 10%. In some cases, the wavelength uncertainty limit can be 10 -2 Picometer to 10 -1 Picometer, 10 -1picometer to 1 picometer, 1 picometer to 10 picometers, 10 picometers to 100 picometers, or any range formed by these values ​​or larger or smaller values.

[0090] In some examples, the second signal can be adjusted to maintain the optical power of the light generated by the optoelectronic device substantially constant or within a power uncertainty limit. In some cases, the power uncertainty limit can be less than 10% of the target optical power. -5 , 10 -4 , less than 10 -3 , less than 1%, less than 5% or less than 10%.

[0091] In some examples, the second signal can be adjusted to increase thermal control speed (eg, reduce response time), or to increase temperature stability of the optoelectronic device.

[0092] In some embodiments, thermal control of a section of an optoelectronic device may be affected by the thermal response time of a corresponding thermal compensation device (e.g., an optoelectronic device or a thermoelectric device). Therefore, in these embodiments, the magnitude of the current provided to the thermal compensation device and its temporal alignment relative to the current provided to the optoelectronic device may be determined based at least in part on the response time of the thermal compensation device.

[0093] In some embodiments, the electrical circuit system 30 can be programmed or configured to perform the following operations according to the above description of FIG. 8A to FIG. 8C The described methods and modified current flow are used to provide or customize the time profile and / or amplitude of the second electrical signal 32b provided to a certain section of the second optoelectronic device 100b (or thermoelectric signal).

[0094] refer to Figure 1A to Figure 1B In some embodiments, the electrical circuit system 30 may be programmed or configured to control the first electrical signal 32a provided to a certain segment of the first optoelectronic device 100a to compensate for residual temperature changes that are not compensated by the thermal compensation device (e.g., the second optoelectronic device 100b). For example, in addition to controlling the second electrical signal 32b, the electrical circuit system 30 may also control the bias current provided to a certain segment of the first optoelectronic device 100a to further stabilize the temperature of the segment, thereby stabilizing the optical output power, polarization, or wavelength (e.g., center wavelength) of the first optoelectronic device 100a. In some cases, the electrical circuit system 30 may control the current (e.g., bias current) provided to a certain segment of the first optoelectronic device 100a to fine-tune the wavelength of light generated by the first optoelectronic device 100a.

[0095] In some examples, during a factory calibration process, the electrical circuit system 30 can be programmed or configured to provide a second electrical signal 32b having a customized amplitude and time profile to the second optoelectronic device 100b (or a thermoelectric signal), and the user can further configure or program the electrical circuit system 30 to adjust the first electrical signal 32a provided to the first optoelectronic device 100a to compensate for residual temperature changes (not compensated by the thermal compensation device) of the first optoelectronic device 100b. In some such examples, the adjustment of the first electrical signal 32a can include adjusting one or more bias currents provided to one or more segments of the first optoelectronic device 100a.

[0096] In various embodiments, the electrical circuit system 30 may include digital circuits, analog circuits, or a combination thereof. Thus, a factory calibration process or a user post-calibration adjustment may include adjusting one or more tunable electronic components in a digital or analog circuit, modifying a machine executable command executed by a processor of the electrical circuit system 30, or adjusting a parameter of an algorithm executed by a processor of the electrical circuit system 30.

[0097] In some examples, the electrical circuit system 30 can use an empirical model to control the first electrical signal 32a and the second electrical signal 32b (e.g., currents 703 and 705). In some such examples, the empirical model can be implemented as an algorithm and a set of parameters stored in a memory of the electrical circuit system 30 and executed by a processor of the electrical circuit system 30. In some cases, the values ​​of at least a subset of the parameters can be adjusted during a factory calibration process or determined based on calculated data or experimental data.

[0098] In various embodiments, the signal provided to the thermal compensation device may be pre-emphasized / post-emphasized and over- or under-shot to increase the speed of thermal equilibrium between the thermal compensation device and the light emitting optoelectronic device.

[0099] In some examples, the thermal compensation device can include one or more heating elements (eg, resistive pads, heating pads).

[0100] In various implementations, pre-emphasis / post-emphasis may include the timing, amplitude, and shape (eg, a specific time profile) of a signal provided to a thermal compensation device.

[0101] In some cases, the time curve, amplitude, timing or other characteristics of the pre-emphasized / post-emphasized signal (e.g., current) may be determined at least in part based on the size, design, material properties, electrical impedance and / or thermal impedance of the thermal compensation device and the light emitting device. In some cases, the time curve, amplitude, timing or other characteristics of the pre-emphasized / post-emphasized signal (e.g., current) may be determined at least in part based on the relative position of the thermal compensation device and the light emitting device. Further, the time curve, amplitude, timing or other characteristics of the pre-emphasized / post-emphasized signal (e.g., current) may be determined based on the thickness of the substrate (e.g., chip) on which the thermal compensation device and the light emitting device are fabricated and / or the orientation of the thermal compensation device and the light emitting device relative to the substrate (e.g., p-side up or p-side down mounting).

[0102] In some cases, the time profile, amplitude, timing, or other characteristics of the pre-emphasis / post-emphasis signal (e.g., current) provided to the thermal compensation device and / or the delay between the pre-emphasis / post-emphasis signal and the signal provided to the light emitting device may be determined at least in part based on the thermal mass of the contact pads (e.g., the amount of metal deposited on a certain section of the thermal compensation device or the light emitting device) and / or the response time of the circuit that controls the pre-emphasis / post-emphasis signal (e.g., a loop time constant, such as a TEC loop constant).

[0103] In some embodiments, in addition to thermal compensation by adjacent devices, the signal provided to the light emitting device (e.g., bias current) can also be adjusted, modulated or controlled to compensate for changes in the properties of light output by the light emitting device (e.g., wavelength or modulation amplitude). Example Embodiments

[0104] Various additional example embodiments of the present disclosure may be described by the following examples: Group 1

[0105] Example 1. An apparatus comprising: an optoelectronic device configured to generate an optical signal; a thermal compensation device in thermal communication with the optoelectronic device; and an electrical circuit system configured to provide at least a first electrical signal to the optoelectronic device and at least a second electrical signal to the thermal compensation device to controllably adjust a temperature of the optoelectronic device; Wherein the electrical circuit system is further configured to adjust the signal property of the second electrical signal based at least in part on the signal property of the first electrical signal to reduce a delay between a change in the second electrical signal and a corresponding adjustment in the temperature of the optoelectronic device.

[0106] Example 2. An apparatus as described in any of the above examples, wherein the signal property includes an amplitude change, a rate of amplitude change, a peak amplitude value, or a phase of the second electrical signal.

[0107] Example 3. An apparatus as described in Example 2, wherein the rate of change of the amplitude of a portion of the second electrical signal is greater than the rate of change of the amplitude of a corresponding portion of the first electrical signal.

[0108] Example 4. The apparatus of Example 2, wherein the second electrical signal is pre-emphasized or post-emphasized relative to the first electrical signal.

[0109] Example 5. The apparatus of Example 4, wherein the second electrical signal includes an overshoot or undershoot portion.

[0110] Example 6. An apparatus as described in any of the above examples, wherein the first electrical signal comprises a periodic signal having a period, and the local maximum value of the second electrical signal lags behind the local minimum value of the first electrical signal by less than 50% of the period of the first electrical signal.

[0111] Example 7. The device as described in Example 6, wherein the absolute value of the local maximum value of the second electrical signal is greater than the absolute value of the local minimum value of the first electrical signal.

[0112] Example 8. An apparatus as described in any of the above examples, wherein the first electrical signal comprises a periodic signal having a period, and the local minimum of the second electrical signal leads the local maximum of the first electrical signal by less than 50% of the period of the first electrical signal.

[0113] Example 9. The device as described in Example 8, wherein the absolute value of the local minimum of the second electrical signal is greater than the absolute value of the local maximum of the first electrical signal.

[0114] Example 10. An apparatus as described in any of the above examples, wherein the first electrical signal and the second electrical signal comprise periodic signals, and a phase of the first electrical signal is shifted by 180 degrees relative to a phase of the second electrical signal.

[0115] Example 11. The apparatus of Example 9, wherein the second electrical signal is configured to operate the thermal compensation device so that an average value of the difference between the thermal energy generated by the optoelectronic device and the thermal energy dissipated within a certain time interval is less than a threshold value.

[0116] Example 12. The apparatus of Example 11, wherein the threshold is less than 5% of an average value of heat generated by the thermal compensation device during the time interval.

[0117] Example 13. The device of Example 11, wherein the first electrical signal comprises a periodic signal having a period, and the time interval comprises one or more of the periods.

[0118] Example 14. An apparatus as described in any of the above examples, wherein the electrical circuit system is further configured to asymmetrically adjust the signal property based at least in part on a current-voltage characteristic of the thermal compensation device.

[0119] Example 15. An apparatus as described in Example 14, wherein the electrical circuit system is further configured to asymmetrically adjust the signal properties of the second electrical signal relative to a bias point in a manner consistent with the resistance of the thermal compensation device, the nonlinearity of the current, or the nonlinearity of the heat generation rate of the thermal compensation device.

[0120] Example 16. An apparatus as described in any of the above examples, wherein the thermal compensation device includes a second optoelectronic device.

[0121] Example 17. The apparatus of Example 16, wherein the optoelectronic device and the second optoelectronic device are substantially identical.

[0122] Example 18. The apparatus of Example 16, wherein the optoelectronic device includes a first optical cavity formed between a first front reflector and a first rear reflector, and the second optoelectronic device includes a second optical cavity formed between a second front reflector and a second rear reflector.

[0123] Example 19. The apparatus of Example 18, wherein the dimensions of the first optical cavity, the first front reflector, and the first rear reflector differ from the dimensions of the second optical cavity, the second front reflector, and the second rear reflector by no more than 20%, respectively.

[0124] Example 20. The apparatus of Example 18, wherein the first optical cavity comprises a first gain segment and a first phase segment, and the second optical cavity comprises a second gain segment and a second phase segment.

[0125] Example 21. The apparatus of Example 20, wherein the sizes of the first phase segment and the first gain segment differ from the sizes of the second phase segment and the second gain segment by no more than 20%, respectively.

[0126] Example 22. The apparatus of Example 16, wherein the first electrical signal is provided to a first section of the optoelectronic device and the second electrical signal is provided to a corresponding first section of the second optoelectronic device.

[0127] Example 23. The apparatus of Example 22, wherein the electrical circuit system is further configured to provide a third electrical signal to the second segment of the optoelectronic device and to provide a fourth electrical signal to the corresponding second segment of the second optoelectronic device.

[0128] Example 24. The apparatus of Example 23, wherein the electrical circuit system is configured to adjust the signal property of the fourth electrical signal based at least in part on the signal property of the third electrical signal.

[0129] Example 25. An apparatus as described in Example 24, wherein the third electrical signal is a periodic signal having a period, and the local maximum value of the fourth electrical signal lags behind the local minimum value of the third electrical signal by less than 50% of the period of the first electrical signal.

[0130] Example 26. An apparatus as described in Example 24, wherein the third electrical signal is a periodic signal having a period, and the local minimum of the fourth electrical signal lags behind the local maximum of the third electrical signal by less than 50% of the period of the first electrical signal.

[0131] Example 27. The apparatus of Example 16, wherein the optoelectronic device and the second optoelectronic device have the same design.

[0132] Example 28. The apparatus of Example 16, wherein the optoelectronic device and the second optoelectronic device have different designs.

[0133] Example 29. The device as described in v, wherein the thermal compensation device and the optoelectronic device are formed on a common substrate.

[0134] Example 30. An apparatus as described in any of the above examples, wherein the optoelectronic device includes a wavelength tunable laser.

[0135] Example 31. An apparatus as described in any of the above examples, wherein the optoelectronic device includes at least one optical reflector, at least one optical gain section, and the at least one optical reflector includes a grating.

[0136] Example 32. The apparatus of Example 31, wherein the first electrical signal is provided to at least one optical reflector of the optoelectronic device.

[0137] Example 33. An apparatus as described in any of the above examples, wherein the electrical circuit system is further configured to adjust the second electrical signal based at least in part on the first electrical signal to maintain wavelength variations of the optical signal generated by the optoelectronic device within a wavelength uncertainty limit.

[0138] Example 34. An apparatus as described in any of the above examples, wherein the thermal compensation device is thermally connected to the optoelectronic device via a common substrate, and the thermal compensation device and the optoelectronic device are both manufactured on the common substrate.

[0139] Example 35. An apparatus as described in any of the above examples, wherein the thermal compensation device includes a thermoelectric device.

[0140] Example 36. The apparatus of Example 35, wherein the thermoelectric device comprises a resistor or a thermoelectric cooler.

[0141] Example 37. The apparatus of Example 35, wherein the thermoelectric device comprises a film resistor or a semiconductor junction.

[0142] Example 38. An apparatus as described in any of the above examples, wherein the electrical circuit system is configured to provide the first electrical signal to a wavelength control section of the optoelectronic device to control the wavelength of the optical signal.

[0143] Example 39. The device of Example 38, wherein the wavelength control segment comprises a reflector or a phase segment.

[0144] Example 40. An apparatus as described in any of the above examples, wherein the electrical circuit system is configured to provide the first electrical signal to a gain section of the optoelectronic device to control the amplitude of the optical signal. Group 2

[0145] Example 1. An apparatus comprising: an optoelectronic device configured to generate an optical signal; a thermal compensation device in thermal communication with the optoelectronic device, the thermal compensation device having a current-voltage characteristic; and an electrical circuit system configured to provide at least a first electrical signal to the optoelectronic device and at least a second electrical signal to the thermal compensation device to controllably adjust a temperature of the optoelectronic device; Wherein, the electrical circuit system is further configured to asymmetrically adjust the signal property of the second electrical signal based at least in part on the current-voltage characteristic of the thermal compensation device.

[0146] Example 2. An apparatus as described in any of the above examples, wherein the electrical circuit system is further configured to asymmetrically adjust the signal properties of the second electrical signal relative to a bias point in a manner consistent with the nonlinearity of the resistance or current of the thermal compensation device.

[0147] Example 3. The apparatus of Example 2, wherein the electrical circuit system is configured to asymmetrically adjust the signal property of the second electrical signal relative to the bias point in a manner consistent with the nonlinearity of the heat generation rate of the thermal compensation device.

[0148] Example 4. An apparatus as described in any of the above examples, wherein the electrical circuit system is further configured to adjust the signal property of the second electrical signal in a manner that reduces the delay between a change in the second electrical signal and a corresponding adjustment of the temperature of the optoelectronic device based at least in part on the signal property of the first electrical signal.

[0149] Example 5. An apparatus as described in any of the above examples, wherein the signal property includes an amplitude change, a rate of amplitude change, a peak amplitude value, or a phase of the second electrical signal.

[0150] Example 6. The apparatus of Example 5, wherein the rate of change of the amplitude of a portion of the second electrical signal is greater than the rate of change of the amplitude of a corresponding portion of the first electrical signal.

[0151] Example 7. The apparatus of Example 5, wherein the second electrical signal is pre-emphasized or post-emphasized relative to the first electrical signal.

[0152] Example 8. The apparatus of Example 4, wherein the second electrical signal includes an overshoot or undershoot portion.

[0153] Example 9. An apparatus as described in any of the above examples, wherein the first electrical signal comprises a periodic signal having a period, and the local maximum value of the second electrical signal lags behind the local minimum value of the first electrical signal by less than 50% of the period of the first electrical signal.

[0154] Example 10. An apparatus as described in any of the above examples, wherein the absolute value of the local maximum value of the second electrical signal is greater than the absolute value of the local minimum value of the first electrical signal.

[0155] Example 11. An apparatus as described in any of the above examples, wherein the first electrical signal comprises a periodic signal having a period, and the local minimum of the second electrical signal leads the local maximum of the first electrical signal by less than 50% of the period of the first electrical signal.

[0156] Example 12. The device of Example 11, wherein the absolute value of the local minimum of the second electrical signal is greater than the absolute value of the local maximum of the first electrical signal.

[0157] Example 13. An apparatus as described in any of the above examples, wherein the first electrical signal and the second electrical signal comprise periodic signals, and a phase of the first electrical signal is shifted by 180 degrees relative to a phase of the second electrical signal.

[0158] Example 14. The apparatus of Example 12, wherein the second electrical signal is configured to operate the thermal compensation device so that an average value of the difference between the thermal energy generated by the optoelectronic device and the thermal energy dissipated within a certain time interval is less than a threshold value.

[0159] Example 15. The apparatus of Example 14, wherein the threshold is less than 5% of an average value of heat generated by the thermal compensation device during the time interval.

[0160] Example 16. The apparatus of Example 14, wherein the first electrical signal comprises a periodic signal having a period, and the time interval comprises one or more of the periods.

[0161] Example 17. An apparatus as described in any of the above examples, wherein the thermal compensation device includes a second optoelectronic device.

[0162] Example 18. The apparatus of Example 17, wherein the optoelectronic device and the second optoelectronic device are substantially identical.

[0163] Example 19. The apparatus of Example 17, wherein the optoelectronic device includes a first optical cavity formed between a first front reflector and a first rear reflector, and the second optoelectronic device includes a second optical cavity formed between a second front reflector and a second rear reflector.

[0164] Example 20. The apparatus of Example 19, wherein the dimensions of the first optical cavity, the first front reflector, and the first rear reflector differ from the dimensions of the second optical cavity, the second front reflector, and the second rear reflector by no more than 20%, respectively.

[0165] Example 21. The apparatus of Example 19, wherein the first optical cavity comprises a first gain segment and a first phase segment, and the second optical cavity comprises a second gain segment and a second phase segment.

[0166] Example 22. The apparatus of Example 21, wherein the dimensions of the first phase segment and the first gain segment differ from the dimensions of the second phase segment and the second gain segment by no more than 20%, respectively.

[0167] Example 23. The apparatus of Example 17, wherein the first electrical signal is provided to a first section of the optoelectronic device and the second electrical signal is provided to a corresponding first section of the second optoelectronic device.

[0168] Example 24. The apparatus of Example 23, wherein the electrical circuit system is further configured to provide a third electrical signal to the second segment of the optoelectronic device and to provide a fourth electrical signal to the corresponding second segment of the second optoelectronic device.

[0169] Example 25. The apparatus of Example 24, wherein the electrical circuit system is configured to adjust the signal property of the fourth electrical signal based at least in part on the signal property of the third electrical signal.

[0170] Example 26. An apparatus as described in Example 24, wherein the third electrical signal is a periodic signal having a period, and the local maximum value of the fourth electrical signal lags behind the local minimum value of the third electrical signal by less than 50% of the period of the first electrical signal.

[0171] Example 27. An apparatus as described in Example 24, wherein the third electrical signal is a periodic signal having a period, and the local minimum of the fourth electrical signal lags behind the local maximum of the third electrical signal by less than 50% of the period of the first electrical signal.

[0172] Example 28. The apparatus of Example 19, wherein the optoelectronic device and the second optoelectronic device have the same design.

[0173] Example 29. The apparatus of Example 19, wherein the optoelectronic device and the second optoelectronic device have different designs.

[0174] Example 30. An apparatus as described in any of the above examples, wherein the thermal compensation device and the optoelectronic device are formed on a common substrate.

[0175] Example 31. An apparatus as described in any of the above examples, wherein the optoelectronic device includes a wavelength tunable laser.

[0176] Example 32. An apparatus as described in any of the above examples, wherein the optoelectronic device includes at least one optical reflector, at least one optical gain section, and the at least one optical reflector includes a grating.

[0177] Example 33. The apparatus of Example 32, wherein the first electrical signal is provided to at least one optical reflector of the optoelectronic device.

[0178] Example 34. An apparatus as described in any of the above examples, wherein the electrical circuit system is further configured to adjust the second electrical signal based at least in part on the first electrical signal to maintain wavelength variations of the optical signal generated by the optoelectronic device within a wavelength uncertainty limit.

[0179] Example 35. An apparatus as described in any of the above examples, wherein the thermal compensation device is thermally connected to the optoelectronic device via a common substrate, and the thermal compensation device and the optoelectronic device are both manufactured on the common substrate.

[0180] Example 36. An apparatus as described in any of the above examples, wherein the thermal compensation device includes a thermoelectric device.

[0181] Example 37. The apparatus of Example 36, wherein the thermoelectric device comprises a resistor or a thermoelectric cooler.

[0182] Example 38. The apparatus of Example 36, wherein the thermoelectric device comprises a film resistor or a semiconductor junction.

[0183] Example 39. An apparatus as described in any of the above examples, wherein the electrical circuit system is configured to provide the first electrical signal to a wavelength control section of the optoelectronic device to control the wavelength of the optical signal.

[0184] Example 40. The device of Example 39, wherein the wavelength control segment comprises a reflector or a phase segment.

[0185] Example 41. An apparatus as described in any of the above examples, wherein the electrical circuit system is configured to provide the first electrical signal to a gain section of the optoelectronic device to control the amplitude of the optical signal.

[0186] Example 42. An apparatus as described in any of the above examples, wherein the second electrical signal includes a current, and the current is modulated asymmetrically relative to a bias current.

[0187] Example 43. An apparatus as described in any of the above examples, wherein the second electrical signal includes a current, and the current is modulated asymmetrically relative to the bias current so as to increase and decrease the heat generated by the thermal compensation device with the same amplitude. the term

[0188] Unless expressly stated otherwise, or understood otherwise within the context in which it is used, conditional language (such as "can," "could," "might," or "may") is generally meant to convey that some embodiments include and other embodiments do not include certain features, elements, and / or steps. Thus, such conditional language is generally not meant to imply that a feature, element, and / or step is in any way essential to one or more embodiments.

[0189] Unless expressly stated otherwise, linking language such as the phrase "at least one of X, Y, and Z" should be understood in the context of ordinary usage to mean that the expression, term, etc. can be any one of X, Y, or Z. Thus, such linking language is generally not meant to imply that certain embodiments require the presence of at least one X, at least one Y, and at least one Z.

[0190] As used herein, language of degree, such as the terms "substantially," "approximately," "substantially," and "substantially" refers to a value, amount, or characteristic that is close to the stated value, amount, or characteristic, but can still perform the desired function or achieve the desired result. For example, the terms "substantially," "approximately," "substantially," and "substantially" may refer to an amount within ±10%, within ±5%, within ±2%, within ±1%, or within ±0.1% of the stated amount. As another example, the terms "substantially parallel" and "substantially parallel" refer to a value, amount, or characteristic that deviates from perfect parallelism by ±10 degrees, ±5 degrees, ±2 degrees, ±1 degrees, or ±0.1 degrees, while the terms "substantially perpendicular" and "substantially perpendicular" refer to a value, amount, or characteristic that deviates from perfect perpendicularity by ±10 degrees, ±5 degrees, ±2 degrees, ±1 degrees, or ±0.1 degrees.

[0191] Various configurations have been described above. Although the present invention has been described with reference to these specific configurations, these descriptions are intended to illustrate the present invention, not to limit the present invention. Those skilled in the art may make various modifications and applications without departing from the true spirit and scope of the present invention. Therefore, for example, in any method or process disclosed herein, the actions or operations that constitute the method / process may be performed in any suitable order, and are not necessarily limited to any specific disclosed order. The features or elements in the above-mentioned various embodiments and examples may be combined with each other to produce alternative configurations compatible with the embodiments disclosed herein. The various aspects and advantages of the embodiments have been described in appropriate places. It should be understood that not all of these aspects or advantages may be achieved according to any particular embodiment. Therefore, for example, it should be recognized that the various embodiments may be performed in a manner that realizes or optimizes an advantage or a group of advantages taught herein, without necessarily realizing other aspects or advantages taught or implied herein.

[0192] In some examples, the methods described herein are performed by software in a machine-readable form on a tangible non-transitory storage medium, such as in the form of a computer program including computer program code that is suitable for performing the operations of one or more methods described herein when the program is run on a computer, and wherein the computer program may be embodied on a non-transitory computer-readable medium. The software is suitable for execution on a parallel processor or a serial processor, so that the method operations can be performed in any suitable order or simultaneously.

[0193] This recognizes that software is a valuable, separately tradable commodity. It is intended to include software that runs on or controls "dumb" or standard hardware to perform a desired function. It is also intended to cover software that "describes" or defines the configuration of hardware, such as HDL (Hardware Description Language) software used to design silicon chips or to configure general-purpose programmable chips to perform a desired function.

[0194] Those skilled in the art will recognize that the storage device for storing program instructions is optionally distributed on the network. For example, the remote computer can store the example of the process described as software. Local or terminal computers can access the remote computer and download part or all of the software to run the program. Alternatively, the local computer can download part of the software as needed, or execute some software instructions at the local terminal and execute some software instructions at the remote computer (or computer network). Those skilled in the art will also recognize that by utilizing conventional techniques known to those skilled in the art, all or part of the software instructions can be executed by a dedicated circuit (such as a digital signal processor (DSP), a programmable logic array, etc.).

[0195] It will be apparent to the skilled artisan that any range or device value given herein may be expanded or altered without losing the effect sought.

[0196] Although the subject matter has been described in language specific to structural features and / or methodological acts, it should be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or acts described above. Instead, the specific features and acts described above are disclosed as example forms of implementing the claims.

[0197] It should be understood that the above benefits and advantages may be related to one embodiment or multiple embodiments. The embodiments are not limited to embodiments that solve any or all of the problems described, nor are they limited to embodiments that have any or all of the benefits and advantages described. No single feature or feature group is necessary or indispensable to every embodiment.

[0198] Any process, frame, state, step or function in the flowchart described herein and / or shown in the drawings should be understood to represent a code module, code segment or code portion, including one or more executable instructions for a specific function (e.g., logic or arithmetic) or step in the implementation process. Various processes, frames, states, steps or functions can be combined, rearranged, added, deleted, modified or otherwise changed according to the illustrative examples provided herein. In some embodiments, additional or different computing systems or code modules can perform some or all of the functions described herein. The methods and processes described herein are also not limited to any specific order, and the frames, steps or states related to the methods and processes can be executed in other appropriate orders, such as serial execution, parallel execution, or in some other way. Tasks or events can be added to or deleted from the disclosed example embodiments. In addition, the separation of various system components in the embodiments described herein is only for illustrative purposes and should not be understood as requiring such separation in all embodiments. It should be understood that the described program components, methods and systems can usually be integrated together in a single computer product or packaged into multiple computer products. Many implementation variants are possible.

Claims

1. A device comprising: an optoelectronic device configured to generate an optical signal; a thermal compensation device in thermal communication with the optoelectronic device; as well as an electrical circuit system configured to provide at least a first electrical signal to the optoelectronic device and at least a second electrical signal to the thermal compensation device to controllably adjust a temperature of the optoelectronic device; Wherein the electrical circuit system is further configured to adjust the signal property of the second electrical signal based at least in part on the signal property of the first electrical signal to reduce a delay between a change in the second electrical signal and a corresponding adjustment in the temperature of the optoelectronic device.

2. The device according to claim 1, wherein: The signal property includes an amplitude change, a rate of amplitude change, a peak amplitude value, or a phase of the second electrical signal.

3. The device as claimed in claim 2, wherein: The second electrical signal is pre-emphasized or post-emphasized relative to the first electrical signal.

4. The device according to claim 3, wherein: The second electrical signal includes an overshoot or undershoot portion.

5. The device according to claim 1, wherein: The first electrical signal comprises a periodic signal having a period, and a local maximum value of the second electrical signal lags behind a local minimum value of the first electrical signal by an amount less than 50% of the period of the first electrical signal.

6. The device according to claim 5, wherein: An absolute value of the local maximum value of the second electrical signal is greater than an absolute value of the local minimum value of the first electrical signal.

7. The device of claim 1, wherein: The first electrical signal includes a periodic signal having a period, and a local minimum value of the second electrical signal leads a local maximum value of the first electrical signal by less than 50% of the period of the first electrical signal.

8. The device according to claim 7, wherein: The absolute value of the local minimum value of the second electrical signal is greater than the absolute value of the local maximum value of the first electrical signal.

9. The device of claim 8, wherein: The second electrical signal is configured to operate the thermal compensation device so that an average value of a difference between thermal energy generated by the optoelectronic device and thermal energy dissipated within a certain time interval is less than a threshold value.

10. The device of claim 1, wherein: The thermal compensation device includes a second optoelectronic device.

11. The device of claim 10, wherein: The optoelectronic device includes a first optical cavity formed between a first front reflector and a first back reflector, and the second optoelectronic device includes a second optical cavity formed between a second front reflector and a second back reflector.

12. The device of claim 11, wherein: The sizes of the first optical cavity, the first front reflector and the first rear reflector differ from the sizes of the second optical cavity, the second front reflector and the second rear reflector by no more than 20%.

13. The device of claim 10, wherein: The first electrical signal is provided to a first section of the optoelectronic device, and the second electrical signal is provided to a corresponding first section of the second optoelectronic device.

14. The device of claim 13, wherein: The electrical circuitry is further configured to provide a third electrical signal to the second section of the optoelectronic device and to provide a fourth electrical signal to a corresponding second section of the second optoelectronic device.

15. The device of claim 14, wherein: The electrical circuit system is configured to adjust a signal property of the fourth electrical signal based at least in part on the signal property of the third electrical signal.

16. The device of claim 15, wherein: The third electrical signal is a periodic signal having a period, and a local maximum value of the fourth electrical signal lags behind a local minimum value of the third electrical signal by an amount less than 50% of the period of the first electrical signal.

17. The device of claim 15, wherein: The third electrical signal is a periodic signal having a period, and a local minimum value of the fourth electrical signal lags behind a local maximum value of the third electrical signal by an amount less than 50% of the period of the first electrical signal.

18. The device of claim 1, wherein: The optoelectronic device includes a wavelength tunable laser.

19. The device of claim 1, wherein: The thermal compensation device includes a thermoelectric device.

20. The device of claim 19, wherein: The thermoelectric device includes a resistor or a thermoelectric cooler.

Images