Gallium nitride-based semiconductor purple light ultraviolet laser chip element

Abstract

The invention relates to the technical field of semiconductor photoelectric devices, and particularly discloses a gallium nitride-based semiconductor purple light ultraviolet laser chip element. The gallium nitride-based semiconductor purple light ultraviolet laser chip element sequentially comprises a substrate, a lower coating layer, a lower wave layer, an active layer, an upper waveguide layer and an upper coating layer from bottom to top, and is characterized in that the upper waveguide layer comprises a first upper waveguide layer for inhibiting light absorption loss and a second upper waveguide layer for inhibiting light absorption loss; according to the gallium nitride-based semiconductor purple light ultraviolet laser chip element, the impurity absorption loss, the internal light absorption loss and the carrier absorption loss of the upper optical waveguide layer can be reduced, the transmission efficiency of light is improved, the loss of energy in a material is reduced, more input power is converted into laser output, the limiting factor of the laser is improved, and the reliability of the laser is improved. Stronger laser output can be obtained under lower injection current, so that the laser is more efficient in various applications.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a gallium nitride-based semiconductor violet ultraviolet laser chip component. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapon, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse. There are mainly solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are major differences between lasers and nitride semiconductor light-emitting diodes: 1) Lasers are generated by stimulated radiation of carriers, the spectral half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneous radiation, and the output power of a single light-emitting diode is in the mW level; 2) The operating current density of the laser reaches KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) Light-emitting diodes spontaneously radiate incoherent light from high energy levels to low energy levels without external effects, while lasers radiate stimulated transitions. The energy of induced photons should be equal to the difference in energy levels of electron transitions, generating photons and induced photons that are completely coherent light; 4) Different principles: light-emitting diodes produce radiation recombination and luminescence under the action of external voltage when electron holes transition to quantum wells or pn junctions, while lasers require lasing conditions to be met before they can be lased. The carrier inversion distribution in the active region must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. The threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0003] Nitride semiconductor lasers have the following problems: the absorption loss of impurities in the optical waveguide of the violet laser is high, which causes the internal optical loss to increase, resulting in a decrease in the laser slope efficiency and an increase in the threshold current; the electron-hole asymmetry and mismatch in the quantum well are serious, electron leakage and carrier delocalization occur, hole transport in the quantum well is more difficult, carrier injection is uneven, and gain is uneven, which makes the laser gain spectrum wider and the peak gain decrease, resulting in an increase in the laser threshold current; non-radiative recombination losses and free carrier absorption in the active region of the violet laser generate a lot of heat. If the laser has low thermal conductivity, poor heat dissipation, and poor temperature characteristics, it will aggravate the thermal mismatch between the semiconductor epitaxial layers, leading to problems such as an increase in threshold current, a decrease in output optical power and slope efficiency. Summary of the invention

[0004] The purpose of the present invention is to provide a gallium nitride-based semiconductor ultraviolet laser chip component with a simple structure and reasonable design in order to solve the above problems.

[0005] The present invention achieves the above-mentioned purpose through the following technical solutions:

[0006] A gallium nitride-based semiconductor ultraviolet laser chip element comprises, from bottom to top, a substrate, a lower cladding layer, a lower wave layer, an active layer, an upper waveguide layer, and an upper cladding layer, wherein the upper waveguide layer comprises a first upper waveguide layer for suppressing light absorption loss and a second upper waveguide layer for suppressing light absorption loss; the valley position of the separation energy of the first upper waveguide layer for suppressing light absorption loss has an ascending angle α in the direction of the upper cladding layer, the peak position of the bulk elastic modulus of the first upper waveguide layer for suppressing light absorption loss has a descending angle β in the direction of the upper cladding layer, the valley position of the light hole effective mass of the first upper waveguide layer for suppressing light absorption loss has an ascending angle γ in the direction of the upper cladding layer, and the peak position of the peak electron drift velocity of the first upper waveguide layer for suppressing light absorption loss has a descending angle θ in the direction of the upper cladding layer, wherein: 30°≤β≤α≤θ≤γ≤90°, and the angle is the tangent inclination angle along the curve;

[0007] The rising angle of the valley position of the separation energy of the second waveguide layer for suppressing light absorption loss toward the upper cladding layer is δ, the falling angle of the peak position of the volume elastic modulus of the second waveguide layer for suppressing light absorption loss toward the upper cladding layer is σ, the rising angle of the valley position of the light hole effective mass of the second waveguide layer for suppressing light absorption loss toward the upper cladding layer is φ, and the falling angle of the peak position of the peak electron drift velocity of the second waveguide layer for suppressing light absorption loss toward the upper cladding layer is ψ, wherein: 20°≤σ≤δ≤ψ≤φ≤90°.

[0008] Further, the rising angle of the valley position of the separation energy of the second waveguide layer for suppressing light absorption loss toward the quantum well is μ, the descending angle of the peak position of the volume elastic modulus of the second waveguide layer for suppressing light absorption loss toward the quantum well is υ, the rising angle of the valley position of the light hole effective mass of the second waveguide layer for suppressing light absorption loss toward the quantum well is ρ, and the descending angle of the valley position of the valley electron drift velocity of the second waveguide layer for suppressing light absorption loss toward the quantum well is ω, wherein: 3°≤υ≤μ≤ω≤ρ≤90°.

[0009] Furthermore, the rising angle of the valley position of the separation energy of the waveguide layer on the first light absorption loss suppression toward the cladding layer and the rising angle of the valley position of the separation energy of the waveguide layer on the second light absorption loss suppression toward the cladding layer and the quantum well have the following relationship: 5°≤μ≤δ≤α≤90°.

[0010] Furthermore, the descending angle of the peak position of the bulk elastic modulus of the waveguide layer on the first light absorption loss suppression toward the upper cladding layer and the descending angle of the peak position of the bulk elastic modulus of the waveguide layer on the second light absorption loss suppression toward the upper cladding layer and the quantum well have the following relationship: 3°≤υ≤σ≤β≤90°.

[0011] Furthermore, the rising angle of the valley position of the light hole effective mass of the waveguide layer for suppressing the first optical absorption loss toward the upper cladding layer and the quantum well direction and the rising angle of the valley position of the light hole effective mass of the waveguide layer for suppressing the second optical absorption loss toward the quantum well direction have the following relationship: 10°≤ρ≤φ≤γ≤90°.

[0012] Furthermore, the decreasing angle of the peak position of the peak electron drift rate of the waveguide layer for suppressing the first optical absorption loss toward the upper cladding layer and the quantum well direction and the decreasing angle of the peak position of the peak electron drift rate of the waveguide layer for suppressing the second optical absorption loss toward the quantum well direction have the following relationship: 8°≤ω≤ψ≤θ≤90°.

[0013] Further, the first suppression light absorption loss waveguide layer separation energy valley position upward cladding layer direction rising angle, the second suppression light absorption loss waveguide layer separation energy valley position upward cladding layer direction, quantum well direction rising angle, the first suppression light absorption loss waveguide layer volume elastic modulus peak position downward cladding layer direction, the second suppression light absorption loss waveguide layer volume elastic modulus peak position downward cladding layer direction, quantum well direction, the first suppression light absorption loss waveguide layer light hole effective mass The rising angle of the valley position of the quantity toward the cladding layer and the quantum well, the rising angle of the valley position of the light hole effective mass of the waveguide layer on the second light absorption loss suppression toward the quantum well, the descending angle of the peak position of the peak electron drift rate of the waveguide layer on the first light absorption loss suppression toward the cladding layer and the quantum well, and the descending angle of the peak position of the peak electron drift rate of the waveguide layer on the second light absorption loss suppression toward the quantum well have the following relationship: 3°≤υ≤σ≤β≤μ≤δ≤α≤ω≤ψ≤θ≤ρ≤φ≤γ≤90°.

[0014] Furthermore, the separation energy distribution of the first waveguide layer on which light absorption loss is suppressed has a function y=A+B*s inx / x 2 The first quadrant curve distribution; the first waveguide layer volume elastic modulus distribution of the light absorption loss suppression has a function y = C + D * sinx / x 2The first quadrant curve distribution; the light hole effective mass distribution of the first waveguide layer that suppresses light absorption loss has a function y=E+F*sinx / x 2 The first quadrant curve distribution; the peak electron drift rate distribution of the first waveguide layer for suppressing light absorption loss has a function y=G+H*l nx / x curve distribution, wherein: A, B, C, D, E, F, G, H are arbitrary values, and E≤A≤C≤G.

[0015] Furthermore, the separation energy distribution of the second waveguide layer on which light absorption loss is suppressed has a function y=I+J*x -a The first quadrant curve distribution, wherein a>1, and is an odd number; the second second optical absorption loss suppression waveguide layer bulk elastic modulus distribution has a function y=K+L*x -a The first quadrant curve distribution, wherein a>1, and is an odd number; the second second light hole effective mass distribution of the waveguide layer in the optical absorption loss suppression layer has a function y=M+N*x -a The first quadrant curve distribution, wherein a>1, and is an odd number; the second second optical absorption loss suppression upper waveguide layer peak electron drift rate distribution has the function y=P+Q*x / cosx; the third quadrant curve distribution; wherein: I, J, K, L, M, N, P, Q are arbitrary values, and M≤I≤K≤P.

[0016] Furthermore, the upper waveguide layer is any one or any combination of InGaN, GaN, AlGaN, AlInGaN, AlN, AlInN, and InN.

[0017] The beneficial effects of the present invention are as follows: the present invention improves the refractive index dispersion and strain polarization of the upper waveguide layer, enhances the light field confinement effect, and improves the mode gain of the laser by regulating the interface change trend of the separation energy interface between the first light absorption loss suppression upper waveguide layer and the quantum well, and the interface change trend of the volume elastic modulus interface between the second light absorption loss suppression upper waveguide layer and the upper cladding layer, and at the same time, regulates the interface change trend of the light hole effective mass interface between the first light absorption loss suppression upper waveguide layer and the quantum well, and the interface change trend of the peak electron drift rate interface between the second light absorption loss suppression upper waveguide layer and the upper cladding layer, reduces the concentration of unionized Mg impurities, reduces the impurity absorption loss, internal light absorption loss and carrier absorption loss of the upper optical waveguide layer, improves the light transmission efficiency, reduces the energy loss in the material, converts more input power into laser output, improves the limitation factor of the laser, and helps to obtain stronger laser output at a lower injection current, which makes the laser more efficient in various applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1It is a schematic structural diagram of a gallium nitride-based semiconductor violet ultraviolet laser chip element according to an embodiment of the present invention;

[0019] Figure 2 It is a SIMS secondary ion mass spectrum of a gallium nitride-based semiconductor violet ultraviolet laser chip element according to an embodiment of the present invention;

[0020] Figure 3 This is a SIMS secondary ion mass spectrum of a gallium nitride-based semiconductor violet ultraviolet laser chip component according to an embodiment of the present invention (partially enlarged view);

[0021] Figure 4 This is a TEM lens electron microscope image of a gallium nitride-based semiconductor violet ultraviolet laser chip element according to an embodiment of the present invention;

[0022] Figure 5 This is a TEM lens electron microscope image (partial magnified image) of a gallium nitride-based semiconductor violet ultraviolet laser chip element according to an embodiment of the present invention;

[0023] Figure 6 This is a TEM lens electron microscope image (partial magnified image) of a gallium nitride-based semiconductor violet ultraviolet laser chip component according to an embodiment of the present invention.

[0024] In the figure: 100, substrate; 101, lower cladding layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 104a, first upper waveguide layer for suppressing light absorption loss; 104b, second upper waveguide layer for suppressing light absorption loss; 105, upper cladding layer. DETAILED DESCRIPTION

[0025] The present application is further described in detail below in conjunction with the accompanying drawings. It is necessary to point out here that the following specific implementation methods are only used to further illustrate the present application and cannot be understood as limiting the scope of protection of the present application. Technical personnel in this field can make some non-essential improvements and adjustments to the present application based on the above application content.

[0026] like Figure 1-Figure 6 As shown, a gallium nitride-based semiconductor ultraviolet laser chip element includes, from bottom to top, a substrate 100, a lower cladding layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper cladding layer 105, wherein the upper waveguide layer 104 includes a first upper waveguide layer 104a for suppressing light absorption loss and a second upper waveguide layer 104b for suppressing light absorption loss;

[0027] It should be noted that the upper waveguide layer 104 refers to a layer structure in an optoelectronic device (such as an optical waveguide or laser) that is used to guide and control the propagation of light. This layer is located at the top of the device and forms a waveguide structure together with other layers (such as the lower waveguide layer 102). The design and material selection of the upper waveguide layer are crucial to ensure the effective propagation of light and device performance;

[0028] The upper waveguide layer 104 is configured as a first upper waveguide layer 104a for suppressing light absorption loss and a second upper waveguide layer 104b for suppressing light absorption loss, which can minimize the absorption loss of light in the waveguide. The first layer and the second layer each have different optical properties, which are used to optimize the absorption loss of different wavelengths or optical modes. This combination can effectively improve the transmission efficiency and device performance of the optical waveguide and reduce the attenuation of the optical signal.

[0029] The rising angle of the valley position of the separation energy of the first light absorption loss suppression waveguide layer 104a toward the cladding layer 105 is α, the falling angle of the peak position of the bulk elastic modulus of the first light absorption loss suppression waveguide layer 104a toward the cladding layer 105 is β, the rising angle of the valley position of the light hole effective mass of the first light absorption loss suppression waveguide layer 104a toward the cladding layer 105 is γ, and the falling angle of the peak position of the peak electron drift velocity of the first light absorption loss suppression waveguide layer 104a toward the cladding layer 105 is θ, wherein: 30°≤β≤α≤θ≤γ≤90°, the angle is the inclination angle of the tangent along the curve;

[0030] Among them, the rising angle of the valley position of the separation energy of the second waveguide layer 104b for suppressing light absorption loss towards the upper cladding layer 105 is δ, the falling angle of the peak position of the volume elastic modulus of the second waveguide layer 104b for suppressing light absorption loss towards the upper cladding layer 105 is σ, the rising angle of the valley position of the light hole effective mass of the second waveguide layer 104b for suppressing light absorption loss towards the upper cladding layer 105 is φ, and the falling angle of the peak position of the peak electron drift velocity of the second waveguide layer 104b for suppressing light absorption loss towards the upper cladding layer 105 is ψ, wherein: 20°≤σ≤δ≤ψ≤φ≤90°.

[0031] It should be noted that the bulk modulus is a physical quantity that describes the elastic response of the layer of material when it is subjected to volume compression. It indicates the material's resistance to volume change, that is, the degree of change in the material's volume when pressure is applied.

[0032] The light hole effective mass is a parameter that describes the motion characteristics of holes in semiconductor materials. Specifically, it reflects the acceleration ability of holes under the action of electric fields.

[0033] Peak electron drift velocity is an important parameter that describes the maximum drift velocity of electrons in semiconductor materials. The drift velocity refers to the average speed of electrons under the action of an electric field, which is affected by the properties of the semiconductor material and the strength of the applied electric field.

[0034] In a specific embodiment, the rising angle of the valley position of the separation energy of the second waveguide layer 104b for suppressing light absorption loss toward the quantum well is μ, the falling angle of the peak position of the volume elastic modulus of the second waveguide layer 104b for suppressing light absorption loss toward the quantum well is υ, the rising angle of the valley position of the light hole effective mass of the second waveguide layer 104b for suppressing light absorption loss toward the quantum well is ρ, and the falling angle of the valley position of the valley electron drift velocity of the second waveguide layer 104b for suppressing light absorption loss toward the quantum well is ω, wherein: 3°≤υ≤μ≤ω≤ρ≤90°.

[0035] In a specific embodiment, the rising angle of the valley position of the separation energy of the waveguide layer 104a for suppressing the first light absorption loss toward the cladding layer 105 and the rising angle of the valley position of the separation energy of the waveguide layer 104b for suppressing the second light absorption loss toward the cladding layer 105 and the quantum well have the following relationship: 5°≤μ≤δ≤α≤90°.

[0036] In a specific embodiment, the decreasing angle of the peak position of the bulk elastic modulus of the waveguide layer 104a for suppressing the first optical absorption loss toward the upper cladding layer 105 and the decreasing angle of the peak position of the bulk elastic modulus of the waveguide layer 104b for suppressing the second optical absorption loss toward the upper cladding layer 105 and the quantum well have the following relationship: 3°≤υ≤σ≤β≤90°.

[0037] In a specific embodiment, the rising angle of the valley position of the light hole effective mass of the waveguide layer 104a for suppressing the first light absorption loss toward the upper cladding layer 105 and the quantum well direction, and the rising angle of the valley position of the light hole effective mass of the waveguide layer 104b for suppressing the second light absorption loss toward the quantum well direction have the following relationship: 10°≤ρ≤φ≤γ≤90°.

[0038] In a specific embodiment, the decreasing angle of the peak position of the peak electron drift rate of the first optical absorption loss suppression waveguide layer 104a toward the upper cladding layer 105 and the quantum well direction and the decreasing angle of the peak position of the peak electron drift rate of the second optical absorption loss suppression waveguide layer 104b toward the quantum well direction have the following relationship: 8°≤ω≤ψ≤θ≤90°.

[0039] In a specific embodiment, the first light absorption loss suppression method is an angle at which the valley position of the separation energy of the waveguide layer 104a is increased toward the cladding layer 105, the second light absorption loss suppression method is an angle at which the valley position of the separation energy of the waveguide layer 104b is increased toward the cladding layer 105 and the quantum well, the first light absorption loss suppression method is an angle at which the peak position of the bulk elastic modulus of the waveguide layer 104a is decreased toward the cladding layer 105, the second light absorption loss suppression method is an angle at which the peak position of the bulk elastic modulus of the waveguide layer 104b is decreased toward the cladding layer 105 and the quantum well, and the first light absorption loss suppression method is an angle at which the peak position of the bulk elastic modulus of the waveguide layer 104b is decreased toward the cladding layer 105 and the quantum well. 4a, the rising angle of the valley position of the light hole effective mass of the second light absorption loss suppression waveguide layer 104b towards the quantum well direction, the descending angle of the peak position of the peak electron drift rate of the first light absorption loss suppression waveguide layer 104a towards the upper cladding layer 105 and the quantum well direction, and the descending angle of the peak position of the peak electron drift rate of the second light absorption loss suppression waveguide layer 104b towards the quantum well direction have the following relationship: 3°≤υ≤σ≤β≤μ≤δ≤α≤ω≤ψ≤θ≤ρ≤φ≤γ≤90°.

[0040] In a specific embodiment, the separation energy distribution of the first optical absorption loss suppression upper waveguide layer 104a has a function y=A+B*sinx / x 2 The first quadrant curve distribution; the first optical absorption loss suppression waveguide layer 104a of the bulk elastic modulus distribution has a function y = C + D * si nx / x 2 The first quadrant curve distribution; the first light hole effective mass distribution of the waveguide layer 104a that suppresses light absorption loss has a function y=E+F*sinx / x 2 The first quadrant curve distribution; the peak electron drift rate distribution of the first optical absorption loss suppression waveguide layer 104a has a function y=G+H*l nx / x curve distribution, wherein: A, B, C, D, E, F, G, H are arbitrary values, and E≤A≤C≤G.

[0041] In a specific embodiment, the separation energy distribution of the second optical absorption loss suppression upper waveguide layer 104b has a function y=I+J*x -a The first quadrant curve distribution, wherein a>1, and is an odd number; the second second optical absorption loss suppression upper waveguide layer 104b volume elastic modulus distribution has a function y=K+L*x -a The first quadrant curve distribution, wherein a>1, and is an odd number; the second light hole effective mass distribution of the waveguide layer 104b for suppressing light absorption loss has a function y=M+N*x -aThe first quadrant curve distribution, wherein a>1, and is an odd number; the second second optical absorption loss suppression upper waveguide layer 104b's peak electron drift rate distribution has the function y=P+Q*x / cosx the third quadrant curve distribution, wherein: I, J, K, L, M, N, P, Q are arbitrary values, and M≤I≤K≤P.

[0042] In a specific implementation, the upper waveguide layer 104 is any one or any combination of InGaN, GaN, AlGaN, AlInGaN, AlN, AlInN, and InN.

[0043] In a specific embodiment, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the period number is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness is 10 to 150 angstroms; the barrier layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlI Any one or any combination of nGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms;

[0044] The lower cladding layer 101, the upper waveguide layer 104, the lower waveguide layer 102, and the upper cladding layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond;

[0045] In a specific embodiment, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, I nP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0046] In order to highlight the technical advantages of the present technical solution, this embodiment compares the performance of the laser element proposed by the present invention with that of the traditional laser element. The comparison results can be seen in Table 1:

[0047] Table 1

[0048] UV laser project Conventional laser Laser of the present invention Range of change Limiting Factor 2.14％ 3.26％ 52％ <![CDATA[Internal optical loss (cm -1 )]]> 17.2 8.14 -53％

[0049] By comparison, it can be found that the limitation factor of the gallium nitride-based semiconductor ultraviolet laser chip element proposed by the present invention is increased from the traditional 2.14% to 3.26%, with a change range of 52%, indicating that the photoelectric conversion efficiency of the laser is improved, and it can more effectively convert electrical energy into light energy;

[0050] Internal optical loss is reduced from the traditional 17.2cm -1 Reduced to 8.14cm -1 , a change of 53%, indicating that the light propagation loss in the laser is greatly reduced, which means that the propagation of light inside the laser is more efficient and more light energy is effectively utilized, thereby increasing the output power of the laser.

[0051] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A gallium nitride-based semiconductor ultraviolet laser chip component, comprising, from bottom to top, a substrate, a lower cladding layer, a lower wave layer, an active layer, an upper waveguide layer, and an upper cladding layer, characterized in that: The upper waveguide layer comprises a first upper waveguide layer for suppressing light absorption loss and a second upper waveguide layer for suppressing light absorption loss; the rising angle of the valley position of the separation energy of the first upper waveguide layer for suppressing light absorption loss toward the upper cladding layer is α, the falling angle of the peak position of the volume elastic modulus of the first upper waveguide layer for suppressing light absorption loss toward the upper cladding layer is β, the rising angle of the valley position of the light hole effective mass of the first upper waveguide layer for suppressing light absorption loss toward the upper cladding layer is γ, and the falling angle of the peak position of the peak electron drift velocity of the first upper waveguide layer for suppressing light absorption loss toward the upper cladding layer is θ, wherein: 30°≤β≤α≤θ≤γ≤90°, the angle is the inclination angle of the tangent along the curve; The rising angle of the valley position of the separation energy of the second waveguide layer for suppressing light absorption loss toward the upper cladding layer is δ, the falling angle of the peak position of the volume elastic modulus of the second waveguide layer for suppressing light absorption loss toward the upper cladding layer is σ, the rising angle of the valley position of the light hole effective mass of the second waveguide layer for suppressing light absorption loss toward the upper cladding layer is φ, and the falling angle of the peak position of the peak electron drift velocity of the second waveguide layer for suppressing light absorption loss toward the upper cladding layer is ψ, wherein: 20°≤σ≤δ≤ψ≤φ≤90°.

2. A gallium nitride-based semiconductor ultraviolet laser chip component according to claim 1, characterized in that: The rising angle of the valley position of the separation energy of the second waveguide layer for suppressing light absorption loss toward the quantum well is μ, the descending angle of the peak position of the volume elastic modulus of the second waveguide layer for suppressing light absorption loss toward the quantum well is υ, the rising angle of the valley position of the light hole effective mass of the second waveguide layer for suppressing light absorption loss toward the quantum well is ρ, and the descending angle of the valley position of the valley electron drift velocity of the second waveguide layer for suppressing light absorption loss toward the quantum well is ω, wherein: 3°≤υ≤μ≤ω≤ρ≤90°.

3. A gallium nitride-based semiconductor ultraviolet laser chip component according to claim 2, characterized in that: The rising angle of the valley position of the separation energy of the waveguide layer on the first light absorption loss suppression toward the cladding layer and the rising angle of the valley position of the separation energy of the waveguide layer on the second light absorption loss suppression toward the cladding layer and the quantum well have the following relationship: 5°≤μ≤δ≤α≤90°.

4. The gallium nitride-based semiconductor ultraviolet laser chip component according to claim 3, characterized in that: The first light absorption loss suppression waveguide layer's peak position of the volume elastic modulus decreases in the direction of the cladding layer, and the second light absorption loss suppression waveguide layer's peak position of the volume elastic modulus decreases in the direction of the cladding layer and the quantum well, and have the following relationship: 3°≤υ≤σ≤β≤90°.

5. The gallium nitride-based semiconductor ultraviolet laser chip component according to claim 4, characterized in that: The rising angle of the valley position of the light hole effective mass of the waveguide layer on the first light absorption loss suppression toward the upper cladding layer and the quantum well direction and the rising angle of the valley position of the light hole effective mass of the waveguide layer on the second light absorption loss suppression toward the quantum well direction have the following relationship: 10°≤ρ≤φ≤γ≤90°.

6. The gallium nitride-based semiconductor ultraviolet laser chip component according to claim 5, characterized in that: The first light absorption loss suppression peak position of the peak electron drift rate of the waveguide layer has a decreasing angle toward the upper cladding layer and the quantum well, and the second light absorption loss suppression peak position of the peak electron drift rate of the waveguide layer has a decreasing angle toward the quantum well, which have the following relationship: 8°≤ω≤ψ≤θ≤90°.

7. A gallium nitride-based semiconductor ultraviolet laser chip component according to claim 6, characterized in that: The first method for suppressing light absorption loss is an angle at which the valley position of the separation energy of the waveguide layer rises in the direction of the cladding layer, the second method for suppressing light absorption loss is an angle at which the valley position of the separation energy of the waveguide layer rises in the direction of the cladding layer and the quantum well, the first method for suppressing light absorption loss is an angle at which the peak position of the bulk elastic modulus of the waveguide layer falls in the direction of the cladding layer, the second method for suppressing light absorption loss is an angle at which the peak position of the bulk elastic modulus of the waveguide layer falls in the direction of the cladding layer and the quantum well, the first method for suppressing light absorption loss is an angle at which the effective mass of light holes in the waveguide layer falls in the direction of the cladding layer and the quantum well. The rising angle of the valley position toward the upper cladding layer and the quantum well direction, the rising angle of the valley position of the light hole effective mass of the waveguide layer on the second light absorption loss suppression toward the quantum well direction, the descending angle of the peak position of the peak electron drift rate of the waveguide layer on the first light absorption loss suppression toward the upper cladding layer and the quantum well direction, and the descending angle of the peak position of the peak electron drift rate of the waveguide layer on the second light absorption loss suppression toward the quantum well direction have the following relationship: 3°≤υ≤σ≤β≤μ≤δ≤α≤ω≤ψ≤θ≤ρ≤φ≤γ≤90°.

8. The gallium nitride-based semiconductor ultraviolet laser chip component according to claim 7, characterized in that: The separation energy distribution of the first waveguide layer on which light absorption loss is suppressed has a function y=A+B*sinx / x 2 The first quadrant curve distribution; the first waveguide layer volume elastic modulus distribution of the first optical absorption loss suppression has a function y = C + D * sinx / x 2 The first quadrant curve distribution; the light hole effective mass distribution of the first waveguide layer for suppressing light absorption loss has a function y=E+F*sinx / x 2 The first quadrant curve distribution; the peak electron drift rate distribution of the first waveguide layer for suppressing light absorption loss has a function y=G+H*lnx / x curve distribution, wherein: A, B, C, D, E, F, G, H are arbitrary values, and E≤A≤C≤G.

9. The gallium nitride-based semiconductor ultraviolet laser chip component according to claim 8, characterized in that: The separation energy distribution of the second waveguide layer on which light absorption loss is suppressed has a function y=I+J*x -a The first quadrant curve distribution, wherein a>1, and is an odd number; the second second optical absorption loss suppression waveguide layer bulk elastic modulus distribution has a function y=K+L*x -a The first quadrant curve distribution, wherein a>1, and is an odd number; the second second light hole effective mass distribution of the waveguide layer in the optical absorption loss suppression layer has a function y=M+N*x -a The first quadrant curve distribution, wherein a>1, and is an odd number; the second second optical absorption loss suppression upper waveguide layer peak electron drift rate distribution has the function y=P+Q*x / cosx; the third quadrant curve distribution; wherein: I, J, K, L, M, N, P, Q are arbitrary values, and M≤I≤K≤P.

10. A gallium nitride-based semiconductor ultraviolet laser chip component according to any one of claims 1 to 9, characterized in that: The upper waveguide layer is any one or any combination of InGaN, GaN, AlGaN, AlInGaN, AlN, AlInN, and InN.

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