Preparation process of photovoltaic power generation device

Abstract

The invention discloses a photovoltaic power generation device preparation technology, and relates to the field of photovoltaic power generation. The preparation process of the photovoltaic power generation device comprises the following steps: step 1, preparing a conductive pattern on an insulating back plate; step 2, pasting a power generation unit on the insulating back plate; and 3, serially connecting to form a power generation device. According to the preparation process of the photovoltaic power generation device, firstly, the power generation device is only provided with a fine grid formed by P-region electrodes and N-region electrodes in a plurality of surface-mounted power generation units and is not provided with a main grid, secondly, the plurality of surface-mounted power generation units are connected in series through a composite conductive insulating backboard which is prepared in advance and is provided with a metal circuit pattern, and the surface-mounted power generation units are connected in series. According to the process, a patch type power generation unit is directly placed on a prefabricated composite conductive insulation backboard in a placement mode, current loss caused by main grid convergence on a power generation device is omitted, the use amount of silver paste used for main grids is reduced, and the silver paste cost is reduced by 60%.

Description

Technical Field

[0001] The invention relates to the technical field of photovoltaic power generation, and in particular to a process for preparing a photovoltaic power generation device. Background Art

[0002] The current output of the current of the current mainstream photovoltaic power generation device is first on the internal power generation unit, where many fine grids collect the photocurrent generated by light inside the power generation unit (the fine grid spacing varies from 0.5 to 1.5 mm), and then gather it on the main grid on the power generation unit that is perpendicular to the fine grid. The spacing of the main grid varies from 8 to 15 mm. Multiple power generation units are connected in series through the main grid on the power generation unit by welding strips or other conductive materials. The transmission of the photocurrent through the fine grids, main grids, and welding strips will cause great resistance losses.

[0003] Therefore, in the manufacturing process of photovoltaic power generation devices, it is necessary to accurately arrange the fine grid and the main grid, and connect them in series through welding strips or other conductive materials. This process requires a high degree of accuracy and process control to ensure the effective transmission of current and the stable performance of the device, and the process is relatively cumbersome. In addition, the material cost of the fine grid, the main grid and the welding strip, as well as the process cost during the manufacturing process, are important components of the cost of photovoltaic power generation devices. With the increasing requirements for the efficiency of photovoltaic power generation devices, these costs are also increasing, so this application proposes a photovoltaic power generation device preparation process. Summary of the invention

[0004] In view of the deficiencies in the prior art, the present invention provides a process for preparing a photovoltaic power generation device, which solves the problem that the current output of the current of the current mainstream photovoltaic power generation device is first collected by many fine grids on the internal power generation unit, and the photocurrent generated by light inside the power generation unit is collected and collected on the main grid on the power generation unit that is perpendicular to the fine grid. Multiple power generation units are connected in series through the main grid on the power generation unit by welding strips or other conductive materials. In this way, the transmission of the photocurrent through the fine grids, the main grid and the welding strips will cause a large resistance loss problem.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solutions: A photovoltaic power generation device preparation process comprises the following steps: Step 1: Prepare a conductive pattern on an insulating backplane; Step 2: Insulating back panel patch power generation unit; Step 3: Connect in series to form a power generation device.

[0006] Preferably, the step of preparing the conductive pattern of the insulating backplane is specifically as follows: Conductive patterns are prepared on an insulating backplane, wherein the preparation methods include but are not limited to electroplating, lamination and wire bonding.

[0007] Preferably, the insulating backplane patch power generation unit steps are specifically as follows: A plurality of power generation units are pasted on the insulating back plate, wherein the power generation units include positive and negative electrodes arranged alternately.

[0008] Preferably, the steps of connecting in series to form a power generation device are specifically: When pasting the power generation unit, the conductive patterns of the power generation unit are adhered to each other so that the positive and negative electrodes in the power generation unit are connected to the conductive patterns, and the conductive patterns are used to connect the positive and negative electrodes in adjacent power generation units in series to form a power generation device.

[0009] A photovoltaic power generation device is prepared by a photovoltaic power generation device preparation process, comprising: A backplane unit, the backplane unit comprising a composite conductive insulating backplane and a metal circuit pattern, the metal circuit pattern being embedded on the back side of the composite conductive insulating backplane; A patch type power generation unit comprises a P region electrode and an N region electrode, wherein both the P region electrode and the N region electrode are in contact with a metal circuit pattern.

[0010] Preferably, the metal circuit pattern is composed of multiple rows of staggered metal strips.

[0011] Preferably, the P-region electrode and the N-region electrode in the adjacent SMD power generation unit are connected to the same metal strip, and the N-region electrode and the P-region electrode in the adjacent SMD power generation unit are connected to the same metal strip.

[0012] Preferably, a P region and an N region are formed near the P region electrode and the N region electrode, respectively.

[0013] Preferably, an isolation region is provided outside the N region.

[0014] The present invention discloses a photovoltaic power generation device preparation process, which has the following beneficial effects: The photovoltaic power generation device preparation process, firstly, only has a fine grid formed by P-zone electrodes and N-zone electrodes in a plurality of patch-type power generation units on the power generation device, and no main grid; secondly, the series connection of a plurality of patch-type power generation units is realized through a pre-prepared composite conductive insulating backplane with a metal circuit pattern, and the process is to place the patch-type power generation units directly on the prefabricated composite conductive insulating backplane by placing them, thereby eliminating the current loss caused by the convergence of the main grid on the power generation device, reducing the use of silver paste for the main grid, and reducing the silver paste cost by 60%, and directly prefabricating the conductive materials in series on the composite conductive insulating backplane, thereby eliminating a series of processes and equipment such as string welding and string swinging, as well as labor, and greatly reducing costs.

[0015] The photovoltaic power generation device preparation process and the power generation device design overturn the existing technology. There is no main grid, and the function of the auxiliary grid is only to lead out the current in the patch-type power generation unit. The subsequent transmission and convergence are realized by the composite conductive insulating backplane and the metal circuit pattern, which reduces the main grid printing process. The patch-type power generation unit adopts full back contact, the P region electrode and the N region electrode are both on the back, and the P region electrode and the N region electrode on the back are staggered through the metal circuit pattern. There is no main grid design, which makes the graphics simpler. Because if there is a main grid design, there will be a phenomenon of staggered positive and negative poles, and there will be more blank isolation areas, which affect current collection. Therefore, the current collection efficiency of the patch-type power generation unit in the present invention is higher.

[0016] The photovoltaic power generation device preparation process uses a patch method to connect multiple patch-type power generation units in series to form a power generation device. The process is simple, efficient, and reduces equipment, site, and labor input. In addition, the use of a prefabricated composite conductive insulating backplane with a metal circuit pattern greatly improves the process yield. It is only necessary to align the patch-type power generation unit and fit it onto the composite conductive insulating backplane.

[0017] In photovoltaic power generation devices, the P region and N region formed near the P region electrode and the N region electrode respectively are the key parts of the PN junction. The PN junction is the basis of semiconductor devices. In photovoltaic power generation devices, when light is irradiated on the PN junction, the photon energy is absorbed by the semiconductor, causing the electrons in the valence band to jump to the conduction band, generating electron-hole pairs. Under the action of the internal electric field, electrons move to the N region and holes move to the P region, forming a photocurrent. An isolation region is set outside the N region. The isolation region is set to prevent accidental electrical contact and interference between the N region and other areas that do not require electrical connection. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 It is a schematic diagram of the process of the present invention; Figure 2 It is a schematic diagram of the structure of the power generation device of the present invention; Figure 3 It is a structural schematic diagram of the backplane unit of the present invention; Figure 4 It is a schematic diagram of the side structure of the backplane unit of the present invention; Figure 5 It is a schematic diagram of the local structure of the power generation device of the present invention.

[0020] In the figure: 1. backplane unit; 11. composite conductive insulating backplane; 12. metal circuit pattern; 2. patch type power generation unit; 21. P region electrode; 22. N region electrode; 23. P region; 24. N region; 25. isolation region. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention are clearly and completely described. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] The embodiment of the present application solves the problem of the current mainstream photovoltaic power generation devices by providing a preparation process for a photovoltaic power generation device. The output of the current is first collected by many fine grids on the internal power generation unit, and the photocurrent generated by light inside the power generation unit is collected and collected on the main grid on the power generation unit that is perpendicular to the fine grid. Multiple power generation units are connected in series through the main grid on the power generation unit by welding strips or other conductive materials. The transmission of the photocurrent through the fine grids, the main grid and the welding strips will cause a large resistance loss problem. First, there is only a fine grid formed by the P-region electrode 21 and the N-region electrode 22 in a plurality of patch-type power generation units 2 on the power generation device, and there is no main grid. Secondly, the series connection of a plurality of patch-type power generation units 2 is realized through a pre-prepared composite conductive insulating backplane 11 with a metal circuit pattern 12. The process is to place the patch-type power generation units 2 directly on the prefabricated composite conductive insulating backplane 11 by placing them, thereby eliminating the current loss caused by the main grid convergence on the power generation device, reducing the amount of silver paste used for the main grid, and reducing the silver paste cost by 60%. The conductive materials connected in series are directly prefabricated on the composite conductive insulating backplane 11, thereby eliminating a series of processes and equipment such as string welding and string swinging, as well as labor, thereby greatly reducing costs.

[0023] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0024] The embodiment of the present invention discloses a photovoltaic power generation device preparation process. Figure 1 As shown, the following steps are included: Step 1: preparing a conductive pattern on an insulating backplane; Step 2: Insulating back panel patch power generation unit; Step 3: Connect in series to form a power generation device.

[0025] Furthermore, the steps of preparing the conductive pattern of the insulating backplane are specifically as follows: Conductive patterns are prepared on an insulating backplane, wherein the preparation methods include but are not limited to electroplating, lamination and wire bonding.

[0026] It should be emphasized that in this embodiment, the conductive pattern is embedded on the insulating backplane by electroplating. Other methods can also be used, such as electroplating, lamination and engraving, wire welding, etching, printing and laser processing.

[0027] Furthermore, the insulating backplane patch power generation unit steps are specifically as follows: A plurality of power generation units are pasted on the insulating back plate, wherein the power generation units include positive and negative electrodes arranged alternately.

[0028] Furthermore, the steps of connecting in series to form a power generation device are specifically as follows: When pasting the power generation unit, the conductive patterns of the power generation unit are adhered to each other so that the positive and negative electrodes in the power generation unit are connected to the conductive patterns, and the conductive patterns are used to connect the positive and negative electrodes in adjacent power generation units in series to form a power generation device.

[0029] It can be widely used in the field of solar photovoltaic, as follows: Rooftop photovoltaic system: The power generation device design can be applied to rooftop photovoltaic systems in homes, commercial and industrial buildings. The elimination of the main grid design simplifies the manufacturing process and reduces costs, making this photovoltaic system more economical and easy to popularize. The full back contact design and staggered electrodes improve the current transmission efficiency, thereby improving the overall conversion efficiency of the photovoltaic system and increasing the power generation.

[0030] Ground photovoltaic power station: This power generation device design is also applicable to large-scale ground photovoltaic power stations. By optimizing the current transmission and convergence methods, it can reduce energy losses inside the power station and improve the overall power generation efficiency. In addition, due to the simplification of the manufacturing process, it can reduce the construction cost of the power station and speed up the construction of the power station.

[0031] A photovoltaic power generation device, according to the attached Figure 2-5 As shown, it is prepared by a photovoltaic power generation device preparation process, including: A backplane unit 1, comprising a composite conductive insulating backplane 11 and a metal circuit pattern 12, wherein the metal circuit pattern 12 is embedded on the back of the composite conductive insulating backplane 11; The patch type power generation unit 2 includes a P region electrode 21 and an N region electrode 22 , and both the P region electrode 21 and the N region electrode 22 are in contact with the metal circuit pattern 12 .

[0032] First, there is only a fine grid formed by the P-region electrode 21 and the N-region electrode 22 in a plurality of patch-type power generation units 2 on the power generation device, and there is no main grid. Secondly, the series connection of a plurality of patch-type power generation units 2 is realized through a pre-prepared composite conductive insulating backplane 11 with a metal circuit pattern 12. The process is to place the patch-type power generation units 2 directly on the prefabricated composite conductive insulating backplane 11 by placing them, thereby eliminating the current loss caused by the main grid convergence on the power generation device, reducing the amount of silver paste used for the main grid, and reducing the silver paste cost by 60%. The conductive materials connected in series are directly prefabricated on the composite conductive insulating backplane 11, thereby eliminating a series of processes and equipment such as string welding and string swinging, as well as labor, thereby greatly reducing costs.

[0033] Furthermore, the metal circuit pattern 12 is composed of a plurality of rows of staggered metal strips.

[0034] It is particularly disclosed that the P region electrode 21 and the N region electrode 22 in the adjacent SMD power generation unit 2 are connected to the same metal strip, and the N region electrode 22 and the P region electrode 21 in the adjacent SMD power generation unit 2 are connected to the same metal strip.

[0035] Furthermore, a P region 23 and an N region 24 are formed near the P region electrode 21 and the N region electrode 22 , respectively.

[0036] In a photovoltaic power generation device, the P region 23 and the N region 24 formed near the P region electrode 21 and the N region electrode 22 are key parts of the PN junction. The PN junction is the basis of semiconductor devices. In a photovoltaic power generation device, when light irradiates the PN junction, the photon energy is absorbed by the semiconductor, causing the electrons in the valence band to transition to the conduction band, generating electron-hole pairs. Under the action of the internal electric field, the electrons move to the N region 24 and the holes move to the P region 23, forming a photocurrent.

[0037] Furthermore, an isolation region 25 is disposed outside the N region 24 . The isolation region 25 is configured to prevent accidental electrical contact and interference between the N region 24 and other regions that do not require electrical connection.

[0038] The isolation region 25 can be implemented by various methods, such as using insulating materials, deep level doping to form a high resistance region, and using other semiconductor process technologies to create electrical isolation.

[0039] It should be emphasized that in this embodiment, the conductive pattern is embedded on the insulating backplane by electroplating, and other methods such as etching, printing and laser processing can also be used.

[0040] First, there is only a fine grid formed by the P-region electrode 21 and the N-region electrode 22 in a plurality of patch-type power generation units 2 on the power generation device, and there is no main grid. Secondly, the series connection of a plurality of patch-type power generation units 2 is realized through a pre-prepared composite conductive insulating backplane 11 with a metal circuit pattern 12. The process is to place the patch-type power generation units 2 directly on the prefabricated composite conductive insulating backplane 11 by placing them, thereby eliminating the current loss caused by the main grid convergence on the power generation device, reducing the amount of silver paste used for the main grid, and reducing the silver paste cost by 60%. The conductive materials connected in series are directly prefabricated on the composite conductive insulating backplane 11, thereby eliminating a series of processes and equipment such as string welding and string swinging, as well as labor, thereby greatly reducing costs.

[0041] The design of the power generation device subverts the existing technology. There is no main grid, and the function of the secondary grid is only to lead out the current in the patch-type power generation unit 2. The subsequent transmission and convergence are realized by the composite conductive insulating backplane 11 and the metal circuit pattern 12, reducing the main grid printing process. The patch-type power generation unit 2 adopts full back contact, the P region electrode 21 and the N region electrode 22 are both on the back, and the P region electrode 21 and the N region electrode 22 on the back are staggered through the metal circuit pattern 12. There is no main grid design, which makes the graphics simpler. Because if there is a main grid design, there will be a phenomenon of staggered positive and negative poles, and there will be more blank isolation areas, which affect current collection. Therefore, the current collection efficiency of the patch-type power generation unit 2 in the present invention is higher.

[0042] Multiple patch-type power generation units 2 are connected in series to form a power generation device in a patch manner. The process is simple and efficient, and the investment in equipment, site, and labor is reduced. In addition, the use of a prefabricated composite conductive insulating backplane 11 with a metal circuit pattern 12 greatly improves the process yield. It is only necessary to align the patch-type power generation unit 2 and fit it onto the composite conductive insulating backplane 11.

[0043] In a photovoltaic power generation device, the P region 23 and the N region 24 formed near the P region electrode 21 and the N region electrode 22 are key parts of the PN junction. The PN junction is the basis of semiconductor devices. In a photovoltaic power generation device, when light irradiates the PN junction, the photon energy is absorbed by the semiconductor, causing the electrons in the valence band to transition to the conduction band, generating electron-hole pairs. Under the action of the internal electric field, the electrons move to the N region 24, and the holes move to the P region 23, forming a photocurrent. An isolation region 25 is provided outside the N region 24. The isolation region 25 is provided to prevent the N region 24 from accidentally making electrical contact and interfering with other regions that do not require electrical connection.

[0044] The isolation region 25 can be implemented by various methods, such as using insulating materials, deep level doping to form a high resistance region, and using other semiconductor process technologies to create electrical isolation.

[0045] It should be emphasized that in this embodiment, the conductive pattern is embedded on the insulating backplane by electroplating, and other methods such as etching, printing and laser processing can also be used.

[0046] It can be widely used in the field of solar photovoltaic, as follows: Rooftop photovoltaic system: The power generation device design can be applied to rooftop photovoltaic systems in homes, commercial and industrial buildings. The elimination of the main grid design simplifies the manufacturing process and reduces costs, making this photovoltaic system more economical and easy to popularize. The full back contact design and staggered electrodes improve the current transmission efficiency, thereby improving the overall conversion efficiency of the photovoltaic system and increasing the power generation.

[0047] Ground photovoltaic power station: This power generation device design is also applicable to large-scale ground photovoltaic power stations. By optimizing the current transmission and convergence methods, it can reduce energy losses inside the power station and improve the overall power generation efficiency. In addition, due to the simplification of the manufacturing process, it can reduce the construction cost of the power station and speed up the construction of the power station.

[0048] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A process for preparing a photovoltaic power generation device, characterized in that: The following steps are involved: Step 1: Prepare a conductive pattern on an insulating backplane; Step 2: Insulating back panel patch power generation unit; Step 3: Connect in series to form a power generation device.

2. A photovoltaic power generation device preparation process according to claim 1, characterized in that: The steps of preparing the conductive pattern of the insulating backplane are specifically as follows: Conductive patterns are prepared on an insulating backplane, wherein the preparation methods include but are not limited to electroplating, lamination and wire bonding.

3. A process for preparing a photovoltaic power generation device according to claim 1, characterized in that: The insulating backplane patch power generation unit steps are specifically as follows: A plurality of power generation units are pasted on the insulating back plate, wherein the power generation units include positive and negative electrodes arranged alternately.

4. A photovoltaic power generation device preparation process according to claim 1, characterized in that: The steps of forming a power generation device in series are specifically as follows: When pasting the power generation unit, the conductive patterns of the power generation unit are adhered to each other so that the positive and negative electrodes in the power generation unit are connected to the conductive patterns, and the conductive patterns are used to connect the positive and negative electrodes in adjacent power generation units in series to form a power generation device.

5. A photovoltaic power generation device, prepared by the photovoltaic power generation device preparation process according to any one of claims 1 to 4, characterized in that: include: A backplane unit (1), the backplane unit (1) comprising a composite conductive insulating backplane (11) and a metal circuit pattern (12), the metal circuit pattern (12) being embedded on the back side of the composite conductive insulating backplane (11); A patch-type power generation unit (2), the patch-type power generation unit (2) comprising a P-region electrode (21) and an N-region electrode (22), the P-region electrode (21) and the N-region electrode (22) both being in contact with a metal circuit pattern (12).

6. A photovoltaic power generation device according to claim 5, characterized in that: The metal circuit pattern (12) is composed of a plurality of rows of staggered metal strips.

7. A photovoltaic power generation device according to claim 6, characterized in that: The P-region electrode (21) and the N-region electrode (22) in the adjacent patch-type power generation unit (2) are connected to the same metal strip, and the N-region electrode (22) and the P-region electrode (21) in the adjacent patch-type power generation unit (2) are connected to the same metal strip.

8. A photovoltaic power generation device according to claim 5, characterized in that: A P region (23) and an N region (24) are formed near the P region electrode (21) and the N region electrode (22), respectively.

9. A photovoltaic power generation device according to claim 5, characterized in that: An isolation region (25) is provided outside the N region (24).

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