Transparent electrode, perovskite photovoltaic device and preparation method

Abstract

The invention relates to the technical field of perovskite photovoltaic, in particular to a transparent electrode, a perovskite photovoltaic device and a preparation method. A first metal compound layer, an ultrathin metal layer and a second metal compound layer are sequentially arranged on a substrate of the transparent electrode; the material of the first metal compound layer and the material of the second metal compound layer comprise an oxygen-containing metal compound and / or a nitrogen-containing metal compound. The transparent electrode has good light transmission and work function, can be matched with perovskite photovoltaic devices with different band gaps, and improves the photoelectric conversion efficiency of the perovskite photovoltaic devices; water vapor and oxygen can be prevented from entering the perovskite layer to degrade perovskite, the packaging effect is achieved, and the service life of the perovskite photovoltaic device is prolonged; the loss of open-circuit voltage and short-circuit current of the perovskite photovoltaic device is greatly reduced, so that the photoelectric conversion efficiency is effectively improved.

Description

Technical Field

[0001] The present invention relates to the field of perovskite photovoltaic technology, and in particular to a transparent electrode, a perovskite photovoltaic device and a preparation method thereof. Background Art

[0002] Perovskite photovoltaic devices are not only composed of perovskite layers, but also of transparent electrodes, top electrodes, and electron and hole transport layers. Usually, the pin structure is the first choice because the pin structure perovskite photovoltaic device has superior stability. However, the transparent electrode in this structure is generally ITO (indium tin oxide) or FTO (fluorine-doped tin oxide).

[0003] However, both of the above-mentioned transparent electrodes have disadvantages.

[0004] Although ITO is universal, it is not particularly suitable for perovskite because it was first used in display and other fields. This is because perovskite has the characteristic of adjustable band gap and its absorption wavelength range is controllable. At low resistance, it is difficult for ITO to maintain its high transmittance in a certain band, making it difficult to adjust its transmittance, which makes it difficult to optically match perovskites with different band gaps. In addition, the work function of ITO is also fixed at around 4.7eV, and it is impossible to adjust the adaptation of perovskite. This will result in a certain VOC (open circuit voltage) and JSC (short circuit current) loss in perovskite photovoltaic devices based on ITO, resulting in a certain upper limit for PCE (photovoltaic conversion efficiency).

[0005] Like ITO, FTO was first applied in other fields and was not adapted to perovskite photovoltaic devices. It is impossible to optimize the light transmission band and match the work function according to the band gap of perovskite, that is, the position of the conduction band and valence band. Therefore, there is also a loss of JSC and VOC.

[0006] In addition, existing perovskite photovoltaic devices generally require special packaging, resulting in complex layer structures and cumbersome preparation processes. Summary of the invention

[0007] The technical problem to be solved by the present invention is to provide a transparent electrode, a perovskite photovoltaic device and a preparation method to solve the problem that general transparent electrodes are difficult to adapt to perovskite photovoltaic devices.

[0008] The technical solution of the present invention to solve the above technical problems is as follows:

[0009] The present invention provides a transparent electrode for a perovskite photovoltaic device, comprising a substrate, on which a first metal compound layer, an ultra-thin metal layer and a second metal compound layer are sequentially arranged; the material of the first metal compound layer and the material of the second metal compound layer include metal compounds containing oxygen and / or metal compounds containing nitrogen.

[0010] Based on the above technical solution, the present invention can also be improved as follows.

[0011] Furthermore, the materials of the first metal compound layer and the second metal compound layer are the same or different.

[0012] Furthermore, the oxygen-containing metal compound includes one or more of zinc oxide, titanium oxide, niobium oxide, ytterbium oxide, tin oxide, tungsten oxide, molybdenum oxide, nickel oxide, indium oxide, calcium oxide, cobalt oxide, lead oxide, platinum oxide, tantalum oxide, barium oxide, zirconium oxide, rubidium oxide, strontium oxide, zinc stannate, strontium titanate, and barium stannate.

[0013] Furthermore, the nitrogen-containing metal compound includes one or more of silicon nitride, aluminum nitride, titanium nitride, tantalum nitride, boron nitride, zirconium nitride, molybdenum nitride, iron nitride, vanadium nitride, and chromium nitride.

[0014] Furthermore, the material of the first metal compound layer and the material of the second metal compound layer also include doped metals, and the doped metals are one or more of Cu, Au, Cs, V, Cr, Fe, Ce, Pt, Pb, Co, Mo, Mn, Ni, Ca, Li, Sn, Ba, Zr, Y, Ta, Mg, Rb, Sr, and Be, and the mass of the doped metals accounts for 1% to 50% of the total mass of the material.

[0015] Furthermore, the thickness of the first metal compound layer and the second metal compound layer is 1-50 nm, and the thickness of the first metal compound layer and the second metal compound layer are the same or different.

[0016] Furthermore, the material of the ultra-thin metal layer is metal or metal alloy; the metal includes one of Ag, Al, Cu, Au, Cr, Pt, and Ni; the metal alloy is a metal selected from Ag, Al, Cu, Au, Cr, and Pt doped with one or more metals selected from Cu, Au, Cs, V, Cr, Fe, Ce, Pt, Pb, Co, Mo, Mn, Ni, Ca, Li, Sn, Ba, Zr, Y, Ta, Mg, Rb, Sr, and Be, and the mass of the doped metal accounts for 1% to 50% of the total mass of the metal alloy.

[0017] Furthermore, the thickness of the ultra-thin metal layer is 0.5nm-15nm.

[0018] Furthermore, the substrate is one of quartz sheet, PET, PEN, PI, CPI, PU, ​​and TPU.

[0019] The present invention also provides a perovskite photovoltaic device, comprising the transparent electrode as described above, wherein a hole transport layer, a perovskite layer, an electron transport layer and a top electrode are sequentially arranged on the transparent electrode.

[0020] The present invention also provides a method for preparing the perovskite photovoltaic device as described above, first preparing the transparent electrode, and then sequentially preparing the hole transport layer, the perovskite layer, the electron transport layer and the top electrode on the second metal compound layer.

[0021] Furthermore, the preparation method of the transparent electrode is to use a magnetron sputtering method to sputter-deposit the first metal compound layer, the ultra-thin metal layer and the second metal compound layer on the substrate in sequence; the power of the sputtering deposition is 0.1-8kw, the gas environment of the sputtering deposition includes a working gas and a reaction gas, and the volume flow ratio of the working gas to the reaction gas is 300:0-150; the working gas is argon, and the reaction gas includes at least one of oxygen, nitrogen, and ammonia.

[0022] Furthermore, the vacuum degree of the magnetron sputtering is 10 -1 ˉ10 -6 Pa.

[0023] Furthermore, during the magnetron sputtering, the pulling speed of the substrate is 0.1-1.5 m / min.

[0024] Furthermore, after the magnetron sputtering is completed, a coil is obtained, a resistance test and a light transmittance test are performed on the coil, and the coil whose test results meet the standards is post-processed to obtain the transparent electrode.

[0025] The beneficial effects of the present invention are:

[0026] (1) The transparent electrode of the present invention has good light transmittance and work function, and can match perovskite photovoltaic devices with different band gaps;

[0027] (2) The transparent electrode of the present invention can improve the photoelectric conversion efficiency of the perovskite photovoltaic device;

[0028] (3) The transparent electrode of the present invention, the first metal compound layer and the second metal compound layer can also prevent water vapor and oxygen from entering the perovskite layer to degrade the perovskite, thereby achieving a packaging effect and extending the service life of the perovskite photovoltaic device;

[0029] (4) The perovskite photovoltaic device of the present invention adopts the transparent electrode of the present invention and has a work function adapted to the perovskite layer, so that the open circuit voltage and short circuit current losses of the perovskite photovoltaic device are greatly reduced, thereby effectively improving the photoelectric conversion efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a schematic structural diagram of the perovskite photovoltaic device of the present invention;

[0031] Figure 2 This is a schematic diagram of the preparation of a transparent electrode in a magnetron sputtering chamber in the method for preparing a perovskite photovoltaic device of the present invention.

[0032] In the accompanying drawings, the components represented by the reference numerals are listed as follows:

[0033] 1. First metal compound layer; 2. Second metal compound layer; 3. Ultra-thin metal layer;

[0034] 10. Substrate; 20. Hole transport layer; 30. Perovskite layer; 40. Electron transport layer; 50. Top electrode. DETAILED DESCRIPTION

[0035] The principles and features of the present invention are described below in conjunction with the accompanying drawings. The examples given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0036] like Figure 1 As shown, the transparent electrode of the present invention includes a substrate 10, on which a first metal compound layer 1, an ultra-thin metal layer 3 and a second metal compound layer 2 are sequentially provided; the material of the first metal compound layer 1 and the material of the second metal compound layer 2 include metal compounds containing oxygen and / or metal compounds containing nitrogen.

[0037] The transparent electrode for the perovskite photovoltaic device of the present invention has good light transmittance through the stacked first metal compound layer 1, ultra-thin metal layer 3 and second metal compound layer 2, which is significantly better than general transparent electrodes such as ITO or FTO, so that the transparent electrode can match the light absorption of perovskite photovoltaic devices with different band gaps. At the same time, when the transparent electrode of the present invention is used to prepare the perovskite photovoltaic device, the first metal compound layer 1 and the second metal compound layer 2 can also prevent water vapor and oxygen from entering the perovskite layer 30 to degrade the perovskite, play a packaging effect, and extend the service life of the perovskite photovoltaic device.

[0038] Preferably, the oxygen-containing metal compound includes, but is not limited to, one or more of zinc oxide, titanium oxide, niobium oxide, ytterbium oxide, tin oxide, tungsten oxide, molybdenum oxide, nickel oxide, indium oxide, calcium oxide, cobalt oxide, lead oxide, platinum oxide, tantalum oxide, barium oxide, zirconium oxide, rubidium oxide, strontium oxide, zinc stannate, strontium titanate, and barium stannate.

[0039] Preferably, the nitrogen-containing metal compound includes one or more of silicon nitride, aluminum nitride, titanium nitride, tantalum nitride, boron nitride, zirconium nitride, molybdenum nitride, iron nitride, vanadium nitride, and chromium nitride.

[0040] Preferably, the material of the first metal compound layer 1 and the material of the second metal compound layer 2 also include doped metals, and the doped metals are one or more of Cu, Au, Cs, V, Cr, Fe, Ce, Pt, Pb, Co, Mo, Mn, Ni, Ca, Li, Sn, Ba, Zr, Y, Ta, Mg, Rb, Sr, and Be, and the mass of the doped metals accounts for 1% to 50% of the total mass of the materials.

[0041] Preferably, the materials of the first metal compound layer 1 and the second metal compound layer 2 are the same or different.

[0042] Preferably, the thickness of the first metal compound layer 1 and the second metal compound layer 2 is 1-50 nm, and the thickness of the first metal compound layer 1 and the second metal compound layer 2 are the same or different.

[0043] Further preferably, the thickness of the first metal compound layer 1 and the second metal compound layer 2 can be 1nm, 1.5nm, 2.8nm, 5nm, 8nm, 10nm, 13nm, 15nm, 20nm, 25nm, 28.5nm, 30nm, 35nm, 40nm, 45nm, 50nm, etc.

[0044] Preferably, the material of the ultra-thin metal layer 3 is metal or metal alloy; the metal includes one of Ag, Al, Cu, Au, Cr, Pt, and Ni; the metal alloy is a metal selected from Ag, Al, Cu, Au, Cr, and Pt doped with one or more metals selected from Cu, Au, Cs, V, Cr, Fe, Ce, Pt, Pb, Co, Mo, Mn, Ni, Ca, Li, Sn, Ba, Zr, Y, Ta, Mg, Rb, Sr, and Be, and the mass of the doped metal accounts for 1% to 50% of the total mass of the metal alloy.

[0045] Further preferably, the mass ratio of doping is 1%, 3%, 5%, 7.5%, 10%, 11.3%, 15%, 20%, 25%, 28%, 30%, 35%, 40%, 45%, 50%, etc.

[0046] Preferably, the thickness of the ultra-thin metal layer 3 is 0.5 nm-15 nm.

[0047] Further preferably, the thickness of the ultra-thin metal layer 3 is 0.5 nm, 1 nm, 2 nm, 2.3 nm, 3.5 nm, 5 nm, 8 nm, 10 nm, 11.2 nm, 13 nm, 15 nm, etc.

[0048] Preferably, the substrate 10 is a rigid substrate or a flexible substrate.

[0049] More preferably, the rigid substrate may be a quartz sheet, and the flexible substrate may be one of PET, PEN, PI, CPI, PU, ​​and TPU.

[0050] The perovskite photovoltaic device of the present invention comprises the transparent electrode as described above, on which a hole transport layer 20, a perovskite layer 30, an electron transport layer 40 and a top electrode 50 are sequentially arranged.

[0051] The perovskite photovoltaic device of the present invention adopts the transparent electrode of the present invention and has a work function adapted to the perovskite layer 30, so that the open circuit voltage and short circuit current losses of the perovskite photovoltaic device are greatly reduced, thereby effectively improving the photoelectric conversion efficiency.

[0052] In addition, the transparent electrode of the present invention has a good encapsulation effect on the perovskite layer 30, preventing water vapor and oxygen from contacting the perovskite layer 30, thereby greatly improving the service life of the perovskite photovoltaic device.

[0053] The method for preparing the perovskite photovoltaic device of the present invention first prepares a transparent electrode, and then sequentially prepares a hole transport layer 20, a perovskite layer 30, an electron transport layer 40 and a top electrode 50 on the transparent electrode.

[0054] Preferably, the preparation method of the transparent electrode is to use a magnetron sputtering method to sequentially sputter-deposit a first metal compound layer 1, an ultra-thin metal layer 3 and a second metal compound layer 2 on a substrate 10; the power of the sputtering deposition is 1ˉ8kw, and the gas environment of the sputtering deposition includes a working gas and a reaction gas, and the volume flow ratio of the working gas to the reaction gas is 300:0ˉ150; the working gas is argon, and the reaction gas includes at least one of oxygen, nitrogen, and ammonia.

[0055] Preferably, the gas environment for sputtering deposition includes argon and oxygen, and the volume flow ratio of argon to oxygen is 300 sccm:0ˉ40 sccm.

[0056] Further preferably, the volume flow ratio of argon and oxygen is 300sccm:0, 300sccm:5sccm, 300sccm:10sccm, 300sccm:15sccm, 300sccm:20sccm, 300sccm:25sccm, 300sccm:30sccm, 300sccm:35sccm, 300sccm:40sccm, etc.

[0057] Preferably, the vacuum degree of magnetron sputtering is 10 -1 ˉ10 -6 Pa.

[0058] Preferably, during magnetron sputtering, the pulling speed of the substrate 10 is 0.1-1.5 m / min.

[0059] Preferably, after magnetron sputtering is completed, a coil is obtained, a resistance test and a light transmittance test are performed on the coil, and the coil whose test results meet the standards is post-processed to obtain a transparent electrode.

[0060] Preferably, the resistance test standard is 5ˉ25Ω / sq., and the transmittance test standard is 80ˉ92% transmittance in the range of 300ˉ850nm.

[0061] Specifically, if Figure 2 As shown, in the above preparation method of the present invention, the preparation of the transparent electrode is carried out in a magnetron sputtering chamber. The magnetron sputtering chamber has three chambers, which respectively place the target material of the first metal compound layer 1, the target material of the ultra-thin metal layer 3, and the target material of the second metal compound layer 2. The substrate 10 is placed on the traction belt, and as the traction belt pulls the substrate 10, it passes through the above three chambers in sequence, thereby completing the sputtering deposition.

[0062] The transparent electrode and perovskite photovoltaic device prepared by the above preparation method have good properties.

[0063] In terms of photovoltaic device efficiency, by adjusting the thickness and material of the first metal compound layer 1, the ultra-thin metal layer 3, and the second metal compound layer 2, the transmittance of the transparent electrode can be adjusted so that it has high transmittance in different bands, optically adapts to perovskite, and improves the short-circuit current of the perovskite photovoltaic device. It is also possible to adjust the work function of the transparent electrode to adapt to the perovskite photovoltaic device and increase the open circuit voltage of the perovskite photovoltaic device. The above-mentioned improvements in transmittance and work function can jointly achieve an improvement in the PCE of the perovskite photovoltaic device.

[0064] In terms of device stability, a metal / metal alloy oxide layer or nitride layer with good density is deposited by magnetron sputtering to achieve water vapor and oxygen barrier. Water vapor and oxygen are key factors that destroy perovskite photovoltaic devices. The present invention can greatly extend the service life of perovskite photovoltaic devices.

[0065] The present invention is illustrated below by means of specific examples and comparative examples.

[0066] Example

[0067] This embodiment adopts the preparation method of the present invention to prepare a perovskite photovoltaic device. The layer structure of the photovoltaic device is a substrate 10, a first metal compound layer 1, an ultra-thin metal layer 3, a second metal compound layer 2, a hole transport layer 20, a perovskite layer 30, an electron transport layer 40 and a top electrode 50.

[0068] Among them, the substrate 10 is PET, the first metal compound layer 1 is ZnO with a thickness of 30nm, the second metal compound layer 2 is TiN with a thickness of 40nm, the ultra-thin metal layer 3 is an alloy of Ag doped with Cu with a doping mass percentage of 5%, and the thickness of the ultra-thin metal layer 3 is 8nm.

[0069] During the preparation process, the power of sputtering deposition is 5kw, and the gas environment of sputtering deposition includes argon and oxygen, and the volume flow ratio of argon and oxygen is 300sccm:30sccm. The vacuum degree of magnetron sputtering is 10 -4 Pa, the pulling speed of the substrate 10 is 1 m / min.

[0070] The effective area of ​​the perovskite photovoltaic device prepared in this embodiment is 0.01 cm 2 The perovskite photovoltaic device has an open circuit voltage of 1.16V and a short circuit current of 25.1mA / cm 2 , the fill factor reaches 87%, and the photoelectric conversion efficiency reaches 25.33%. Under the environment of 85℃ and RH85%, the efficiency of the device drops by 50% after 800 hours.

[0071] Comparative Example 1

[0072] This comparative example uses ITO as the transparent electrode, and the other layer structures, materials and preparation processes are the same as those in the embodiment.

[0073] The square resistance of ITO is 15Ω / sq., and its transmittance is about 88%. The perovskite photovoltaic device in this comparative example has an effective area of ​​0.01cm 2 , open circuit voltage 1.1V, short circuit current 24.5mA / cm 2, fill factor 86%, photoelectric conversion efficiency 23.18%. Under 85℃, RH85% relative humidity environment, the efficiency dropped by 50% after 200 hours.

[0074] Comparative Example 2

[0075] This comparative example uses FTO as the transparent electrode, and the other layer structures, materials and preparation processes are the same as those in the embodiment.

[0076] The square resistance of FTO is 15Ω / sq., and its transmittance is about 85%. The perovskite photovoltaic device in this comparative example has an effective area of ​​0.01cm 2 , open circuit voltage 1.06V, short circuit current 24.2mA / cm 2 , fill factor 86%, photoelectric conversion efficiency 22.06%. Under 85℃, RH85% relative humidity environment, the efficiency dropped by 50% after 250 hours.

[0077] It can be seen from the above embodiments and comparative examples that, compared with perovskite photovoltaic devices with the same effective area, the photoelectric conversion efficiency of the embodiment is also significantly improved. At the same time, the rate of efficiency reduction is significantly slowed down, indicating that the properties of the photovoltaic device of the embodiment are significantly improved compared with comparative examples 1 and 2.

[0078] In the description of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation to the present invention.

[0079] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0080] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0081] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0082] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A transparent electrode, comprising a substrate (10), characterized in that: The substrate (10) is provided with a first metal compound layer (1), an ultra-thin metal layer (3) and a second metal compound layer (2) in sequence; the material of the first metal compound layer (1) and the material of the second metal compound layer (2) include metal compounds containing oxygen and / or metal compounds containing nitrogen.

2. A transparent electrode according to claim 1, characterized in that: The material of the first metal compound layer (1) and the material of the second metal compound layer (2) are the same or different.

3. A transparent electrode according to claim 2, characterized in that: The oxygen-containing metal compound includes one or more of zinc oxide, titanium oxide, niobium oxide, ytterbium oxide, tin oxide, tungsten oxide, molybdenum oxide, nickel oxide, indium oxide, calcium oxide, cobalt oxide, lead oxide, platinum oxide, tantalum oxide, barium oxide, zirconium oxide, rubidium oxide, strontium oxide, zinc stannate, strontium titanate, and barium stannate.

4. A transparent electrode according to claim 2, characterized in that: The nitrogen-containing metal compound includes one or more of silicon nitride, aluminum nitride, titanium nitride, tantalum nitride, boron nitride, zirconium nitride, molybdenum nitride, iron nitride, vanadium nitride, and chromium nitride.

5. A transparent electrode according to claim 2, characterized in that: The material of the first metal compound layer (1) and the material of the second metal compound layer (2) also include doped metals, and the doped metals are one or more of Cu, Au, Cs, V, Cr, Fe, Ce, Pt, Pb, Co, Mo, Mn, Ni, Ca, Li, Sn, Ba, Zr, Y, Ta, Mg, Rb, Sr, and Be, and the mass of the doped metals accounts for 1% to 50% of the total mass of the materials.

6. A transparent electrode according to any one of claims 1 to 5, characterized in that: The thickness of the first metal compound layer (1) and the second metal compound layer (2) is 1-50 nm, and the thickness of the first metal compound layer (1) and the second metal compound layer (2) are the same or different.

7. A transparent electrode according to any one of claims 1 to 5, characterized in that: The material of the ultra-thin metal layer (3) is metal or metal alloy; the metal includes one of Ag, Al, Cu, Au, Cr, Pt and Ni; the metal alloy is one of Ag, Al, Cu, Au, Cr and Pt doped with one or more metals of Cu, Au, Cs, V, Cr, Fe, Ce, Pt, Pb, Co, Mo, Mn, Ni, Ca, Li, Sn, Ba, Zr, Y, Ta, Mg, Rb, Sr and Be, and the mass of the doped metal accounts for 1% to 50% of the total mass of the metal alloy.

8. A transparent electrode according to claim 7, characterized in that: The thickness of the ultra-thin metal layer (3) is 0.5 nm to 15 nm.

9. A transparent electrode according to any one of claims 1 to 5, characterized in that: The substrate (10) is one of quartz sheet, PET, PEN, PI, CPI, PU and TPU.

10. A perovskite photovoltaic device, characterized in that: It comprises a transparent electrode as described in any one of claims 1 to 9, and also comprises a hole transport layer (20), a perovskite layer (30), an electron transport layer (40) and a top electrode (50).

11. A method for preparing a perovskite photovoltaic device according to claim 10, characterized in that: The transparent electrode is first prepared, and then the hole transport layer (20), the perovskite layer (30), the electron transport layer (40) and the top electrode (50) are sequentially prepared on the second metal compound layer (2).

12. The method for preparing a perovskite photovoltaic device according to claim 11, characterized in that: The transparent electrode is prepared by sequentially sputtering and depositing the first metal compound layer (1), the ultra-thin metal layer (3) and the second metal compound layer (2) on the substrate (10) using a magnetron sputtering method; the power of the sputtering deposition is 0.1-8 kW, the gas environment of the sputtering deposition includes a working gas and a reaction gas, and the volume flow ratio of the working gas to the reaction gas is 300:0-150; the working gas is argon, and the reaction gas includes at least one of oxygen, nitrogen and ammonia.

13. The method for preparing a perovskite photovoltaic device according to claim 12, characterized in that: The vacuum degree of the magnetron sputtering is 10 -1 ˉ10 -6 Pa.

14. The method for preparing a perovskite photovoltaic device according to claim 12, characterized in that: During the magnetron sputtering, the pulling speed of the substrate (10) is 0.1-10 m / min.

15. The method for preparing a perovskite photovoltaic device according to claim 12, characterized in that: After the magnetron sputtering is completed, a coil is obtained, and a resistance test and a light transmittance test are performed on the coil. The coil whose test results meet the standards is post-processed to obtain the transparent electrode.

Images